DRV5055A3QDBZR

DRV5055 SBAS640B – JANUARY 2018 – REVISED DRV5055 APRIL 2021 SBAS640B – JANUARY 2018 – REVISED APRIL 2021 www.ti.com DRV5055 Ratiometric Linear Hall Effect Sensor 1 Features 3 Description • • • • The DRV5055 is a linear Hall effect sensor that responds proportionally to magnetic flux density. The device can be used for accurate position sensing in a wide range of applications. • • • • Ratiometric Linear Hall Effect Magnetic Sensor Operates From 3.3-V and 5-V Power Supplies Analog Output With VCC / 2 Quiescent Offset Magnetic Sensitivity Options (At VCC = 5 V): – A1/Z1: 100 mV/mT, ±21-mT Range – A2/Z2: 50 mV/mT, ±42-mT Range – A3/Z3: 25 mV/mT, ±85-mT Range – A4/Z4: 12.5 mV/mT, ±169-mT Range Fast 20-kHz Sensing Bandwidth Low-Noise Output With ±1-mA Drive Compensation For Magnet Temperature Drift for A1/A2/A3/A4 Versions and None for Z1/Z2/Z3/Z4 Versions Standard Industry Packages: – Surface-Mount SOT-23 – Through-Hole TO-92 2 Applications • • • • • • • • • Precise Position Sensing Industrial Automation and Robotics Home Appliances Gamepads, Pedals, Keyboards, Triggers Height Leveling, Tilt and Weight Measurement Fluid Flow Rate Measurement Medical Devices Absolute Angle Encoding Current Sensing The device operates from 3.3-V or 5-V power supplies. When no magnetic field is present, the analog output drives half of VCC. The output changes linearly with the applied magnetic flux density, and four sensitivity options enable maximal output voltage swing based on the required sensing range. North and south magnetic poles produce unique voltages. Magnetic flux perpendicular to the top of the package is sensed, and the two package options provide different sensing directions. The device uses a ratiometric architecture that can eliminate error from VCC tolerance when the external analog-to-digital converter (ADC) uses the same VCC for its reference. Additionally, the device features magnet temperature compensation to counteract how magnets drift for linear performance across a wide – 40°C to 125°C temperature range. Device options for no temperature compensation of magnet drift are also available. Device Information(1) PART NUMBER DRV5055 (1) PACKAGE 2.92 mm × 1.30 mm TO-92 (3) 4.00 mm × 3.15 mm For all available packages, see the orderable addendum at the end of the data sheet. VCC OUT VCC DRV5055 VCC Controller OUT BODY SIZE (NOM) SOT-23 (3) ADC VL (MAX) VCC / 2 GND 0V Typical Schematic north VL (MIN) 0 mT B south Magnetic Response An©IMPORTANT NOTICEIncorporated at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, Copyright 2021 Texas Instruments Submit Document Feedback intellectual property matters and other important disclaimers. PRODUCTION DATA. Product Folder Links: DRV5055 1 DRV5055 www.ti.com SBAS640B – JANUARY 2018 – REVISED APRIL 2021 Table of Contents 1 Features............................................................................1 2 Applications..................................................................... 1 3 Description.......................................................................1 4 Revision History.............................................................. 2 5 Pin Configuration and Functions...................................3 6 Specifications.................................................................. 4 6.1 Absolute Maximum Ratings........................................ 4 6.2 ESD Ratings............................................................... 4 6.3 Recommended Operating Conditions.........................4 6.4 Thermal Information....................................................4 6.5 Electrical Characteristics.............................................5 6.6 Magnetic Characteristics.............................................5 6.7 Typical Characteristics................................................ 6 7 Detailed Description........................................................9 7.1 Overview..................................................................... 9 7.2 Functional Block Diagram........................................... 9 7.3 Feature Description.....................................................9 7.4 Device Functional Modes..........................................13 8 Application and Implementation.................................. 14 8.1 Application Information............................................. 14 8.2 Typical Application.................................................... 15 8.3 Do's and Don'ts.........................................................17 9 Power Supply Recommendations................................18 10 Layout...........................................................................18 10.1 Layout Guidelines................................................... 18 10.2 Layout Examples.................................................... 18 11 Device and Documentation Support..........................19 11.1 Documentation Support.......................................... 19 11.2 Receiving Notification of Documentation Updates.. 19 11.3 Support Resources................................................. 19 11.4 Trademarks............................................................. 19 11.5 Electrostatic Discharge Caution.............................. 19 11.6 Glossary.................................................................. 19 12 Mechanical, Packaging, and Orderable Information.................................................................... 19 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision A (June 2020) to Revision B (April 2021) Page • Updated the numbering format for tables, figures, and cross-references throughout the document..................1 • Changed the absolute maximum operating junction temperature from: 150°C to: 170°C.................................. 4 • Removed the Product Preview tablenote from the Magnetic Characteristics table............................................ 5 Changes from Revision * (January 2018) to Revision A (June 2020) Page • Added Zero TC sensitivity options to the data sheet.......................................................................................... 1 • Added Zero TC information to the Electrical Characteristics ............................................................................. 5 • Added Zero TC information to the Magnetic Characteristics table..................................................................... 5 • Added graphs for DV5055Z1/Z2/Z3/Z4 options in the Typical Characteristics section.......................................6 • Updated STC definition in Equation 1 ...............................................................................................................10 • Updated the Sensitivity Temperature Compensation for Magnets section for Zero TC options....................... 12 2 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: DRV5055 DRV5055 www.ti.com SBAS640B – JANUARY 2018 – REVISED APRIL 2021 5 Pin Configuration and Functions 1 VCC 3 OUT GND 2 Figure 5-1. DBZ Package 3-Pin SOT-23 Top View 1 2 3 VCC GND OUT Figure 5-2. LPG Package 3-Pin TO-92 Top View Table 5-1. Pin Functions PIN NAME I/O DESCRIPTION SOT-23 TO-92 VCC 1 1 — Power supply. TI recommends connecting this pin to a ceramic capacitor to ground with a value of at least 0.01 µF. OUT 2 3 O Analog output GND 3 2 — Ground reference Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: DRV5055 3 DRV5055 www.ti.com SBAS640B – JANUARY 2018 – REVISED APRIL 2021 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)(1) MIN MAX UNIT Power supply voltage VCC –0.3 7 V Output voltage OUT –0.3 VCC + 0.3 V Magnetic flux density, BMAX Unlimited T Operating junction temperature, TJ –40 170 °C Storage temperature, Tstg –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2500 Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±750 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) VCC Power-supply voltage(1) IO Output continuous current TA (1) (2) Operating ambient temperature(2) MIN MAX 3 3.63 UNIT 4.5 5.5 –1 1 mA –40 125 °C V There are two isolated operating VCC ranges. For more information see the Operating VCC Ranges section. Power dissipation and thermal limits must be observed. 6.4 Thermal Information DRV5055 THERMAL METRIC(1) TO-92 (LPG) UNIT 3 PINS 3 PINS RθJA Junction-to-ambient thermal resistance 170 121 °C/W RθJC(top) Junction-to-case (top) thermal resistance 66 67 °C/W RθJB Junction-to-board thermal resistance 49 97 °C/W YJT Junction-to-top characterization parameter 1.7 7.6 °C/W YJB Junction-to-board characterization parameter 48 97 °C/W (1) 4 SOT-23 (DBZ) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: DRV5055 DRV5055 www.ti.com SBAS640B – JANUARY 2018 – REVISED APRIL 2021 6.5 Electrical Characteristics for VCC = 3 V to 3.63 V and 4.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted) TEST CONDITIONS(1) PARAMETER ICC Operating supply current tON Power-on time (see Figure 7-4) fBW Sensing bandwidth td Propagation delay time BND Input-referred RMS noise density BN Input-referred noise VN (1) (2) Output-referred noise(2) MIN B = 0 mT, no load on OUT From change in B to change in OUT TYP 6 10 mA 330 µs 20 kHz 10 µs VCC = 5 V 130 215 BN × S VCC = 5 V UNIT 175 VCC = 3.3 V BND × 6.6 × √ 20 kHz MAX nT/√ Hz 0.12 VCC = 3.3 V 0.2 DRV5055A1/Z1 12 DRV5055A2/Z2 6 DRV5055A3/Z3 3 DRV5055A4/Z4 1.5 mTPP mVPP B is the applied magnetic flux density. VN describes voltage noise on the device output. If the full device bandwidth is not needed, noise can be reduced with an RC filter. 6.6 Magnetic Characteristics for VCC = 3 V to 3.63 V and 4.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS(1) MIN TYP MAX VCC = 5 V 2.43 2.5 2.57 VCC = 3.3 V 1.59 1.65 1.71 VQ Quiescent voltage B = 0 mT, TA = 25°C VQΔT Quiescent voltage temperature drift B = 0 mT, TA = –40°C to 125°C versus 25°C VQRE Quiescent voltage ratiometry error(2) VQΔL Quiescent voltage lifetime drift High-temperature operating stress for 1000 hours Sensitivity VCC = 3.3 V, TA = 25°C VCC = 5 V, TA = 25°C BL Linear magnetic sensing range(3) (4) VCC = 3.3 V, TA = 25°C VL Linear range of output voltage(4) STC Sensitivity temperature compensation for magnets(5) V V ±0.2% VCC = 5 V, TA = 25°C S ±1% × VCC UNIT < 0.5% DRV5055A1/Z1 95 100 105 DRV5055A2/Z2 47.5 50 52.5 DRV5055A3/Z3 23.8 25 26.2 DRV5055A4/Z4 11.9 12.5 13.2 DRV5055A1/Z1 57 60 63 DRV5055A2/Z2 28.5 30 31.5 DRV5055A3/Z3 14.3 15 15.8 DRV5055A4/Z4 7.1 7.5 7.9 DRV5055A1/Z1 ±21 DRV5055A2/Z2 ±42 DRV5055A3/Z3 ±85 DRV5055A4/Z4 ±169 DRV5055A1/Z1 ±22 DRV5055A2/Z2 ±44 DRV5055A3/Z3 ±88 DRV5055A4/Z4 ±176 mT 0.2 DRV5055A1, DRV5055A2, DRV5055A3, DRV5055A4 mV/mT VCC – 0.2 0.12 V %/°C Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: DRV5055 5 DRV5055 www.ti.com SBAS640B – JANUARY 2018 – REVISED APRIL 2021 for VCC = 3 V to 3.63 V and 4.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted) TEST CONDITIONS(1) PARAMETER MIN TYP STCz Sensitivity temperature compensation for magnets(5) DRV5055Z1, DRV5055Z2, DRV5055Z3, DRV5055Z4 SLE Sensitivity linearity error(4) VOUT is within VL ±1% SSE Sensitivity symmetry error(4) VOUT is within VL ±1% SRE Sensitivity ratiometry error(2) TA = 25°C, with respect to VCC = 3.3 V or 5 V SΔL Sensitivity lifetime drift High-temperature operating stress for 1000 hours (1) (2) (3) (4) (5) MAX UNIT 0 –2.5% %/°C 2.5%