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DRV8301
SLOS719F – AUGUST 2011 – REVISED JANUARY 2016
DRV8301 Three-Phase Gate Driver With Dual Current Shunt Amplifiers
and Buck Regulator
1 Features
3 Description
•
•
The DRV8301 is a gate driver IC for three-phase
motor drive applications. The device provides three
half-bridge drivers, each capable of driving two Nchannel MOSFETs. The DRV8301 supports up to
1.7-A source and 2.3-A peak current capability. The
DRV8301 can operate off of a single power supply
with a wide range from 6-V to 60-V. The device uses
a bootstrap gate driver architecture with trickle charge
circuitry to support 100% duty cycle. The DRV8301
uses automatic handshaking when the high-side or
low-side MOSFET is switching to prevent flow of
current. Integrated VDS sensing of the high-side and
low-side MOSFETs is used to protect the external
power stage against overcurrent conditions.
1
•
•
•
•
•
•
•
•
6-V to 60-V Operating Supply Voltage Range
1.7-A Source and 2.3-A Sink Gate Drive Current
Capability
Slew Rate Control for EMI Reduction
Bootstrap Gate Driver With 100% Duty Cycle
Support
6- or 3-PWM Input Modes
Dual Integrated Current Shunt Amplifiers With
Adjustable Gain and Offset
Integrated 1.5-A Buck Converter
3.3-V and 5-V Interface Support
SPI
Protection Features:
– Programmable Dead Time Control (DTC)
– Programmable Overcurrent Protection (OCP)
– PVDD and GVDD Undervoltage Lockout
(UVLO)
– GVDD Overvoltage Lockout (OVLO)
– Overtemperature Warning/Shutdown
(OTW/OTS)
– Reported Through nFAULT, nOCTW, and SPI
Registers
2 Applications
•
•
•
•
•
•
The DRV8301 includes two current shunt amplifiers
for accurate current measurement. The amplifiers
support bidirectional current sensing and provide an
adjustable output offset up to 3 V.
The DRV8301 also includes an integrated switching
mode buck converter with adjustable output and
switching frequency. The buck converter can provide
up to 1.5 A to support MCU or additional system
power needs.
The SPI provides detailed fault reporting and flexible
parameter settings such as gain options for the
current shunt amplifiers and slew rate control of the
gate drivers.
Device Information(1)
3-Phase BLDC and PMSM Motors
CPAPs and Pumps
E-bikes
Power Tools
Robotics and RC Toys
Industrial Automation
PART NUMBER
DRV8301
PACKAGE
HTSSOP (56)
BODY SIZE (NOM)
14.00 mm × 8.10 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
6 to 60 V
MCU
SPI
Diff Amps
nFAULT
nOCTW
DRV8301
3-Phase
Brushless
Pre-Driver
Gate Drive
Sense
Buck
Converter
N-Channel
MOSFETs
PWM
M
Vcc (Buck)
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
DRV8301
SLOS719F – AUGUST 2011 – REVISED JANUARY 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
6
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
Absolute Maximum Ratings ...................................... 6
ESD Ratings.............................................................. 6
Recommended Operating Conditions....................... 7
Thermal Information .................................................. 7
Electrical Characteristics........................................... 8
Current Shunt Amplifier Characteristics.................... 9
Buck Converter Characteristics .............................. 10
SPI Timing Requirements (Slave Mode Only) ........ 10
Gate Timing and Protection Switching
Characteristics ......................................................... 11
6.10 Typical Characteristics .......................................... 12
7
Detailed Description ............................................ 13
7.1 Overview ................................................................. 13
7.2 Functional Block Diagram ....................................... 14
7.3
7.4
7.5
7.6
8
Feature Description.................................................
Device Functional Modes .......................................
Programming...........................................................
Register Maps .........................................................
15
20
21
22
Application and Implementation ........................ 24
8.1 Application Information............................................ 24
8.2 Typical Application .................................................. 25
9
Power Supply Recommendations...................... 28
9.1 Bulk Capacitance .................................................... 28
10 Layout................................................................... 29
10.1 Layout Guidelines ................................................. 29
10.2 Layout Example .................................................... 30
11 Device and Documentation Support ................. 31
11.1
11.2
11.3
11.4
11.5
Documentation Support .......................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
31
31
31
31
31
12 Mechanical, Packaging, and Orderable
Information ........................................................... 31
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision E (October 2015) to Revision F
•
Page
Changed VEN_BUCK in Buck Converter Characteristics From: MIN = 0.9 V and MAX = 1.55 V To: MIN = 1.11 V and
MAX = 1.36 V. ..................................................................................................................................................................... 10
Changes from Revision D (August 2015) to Revision E
Page
•
Corrected table note for dead time programming definition ................................................................................................. 11
•
Updated description of gate driver power-up sequencing errata ........................................................................................ 24
•
Fixed connections for pin 25 in Figure 7 ............................................................................................................................. 25
Changes from Revision C (January 2015) to Revision D
Page
•
VPVDD absolute max voltage rating reduced from 70 V to 65 V ............................................................................................. 6
•
Clarification made on how the OCP status bits report in Overcurrent Protection and Reporting (OCP) ............................ 17
•
Update to PVDD1 undervoltage protection in Undervoltage Protection (PVDD_UV and GVDD_UV) describing
specific transient brownout issue. ........................................................................................................................................ 18
•
Update to EN_GATE pin functional description in EN_GATE clarifying proper EN_GATE reset pulse lengths. ................ 20
•
Added gate driver power-up sequencing errata .................................................................................................................. 24
•
Added Community Resources ............................................................................................................................................. 31
Changes from Revision B (August 2013) to Revision C
•
2
Page
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 6
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SLOS719F – AUGUST 2011 – REVISED JANUARY 2016
5 Pin Configuration and Functions
DCA Package
56-Pin HTSSOP with PowerPAD™
Top View
1
56
2
55
3
54
4
53
5
52
6
51
7
50
8
49
9
48
10
47
11
46
12
13
14
15
16
17
18
GND (57) - PWR_PAD
RT_CLK
COMP
VSENSE
PWRGD
nOCTW
nFAULT
DTC
nSCS
SDI
SDO
SCLK
DC_CAL
GVDD
CP1
CP2
EN_GATE
INH_A
INL_A
INH_B
INL_B
INH_C
INL_C
DVDD
REF
SO1
SO2
AVDD
AGND
45
44
43
42
41
40
39
19
38
20
37
21
36
22
35
23
34
24
33
25
32
26
31
27
30
28
29
SS_TR
EN_BUCK
PVDD2
PVDD2
BST_BK
PH
PH
VDD_SPI
BST_A
GH_A
SH_A
GL_A
SL_A
BST_B
GH_B
SH_B
GL_B
SL_B
BST_C
GH_C
SH_C
GL_C
SL_C
SN1
SP1
SN2
SP2
PVDD1
Pin Functions
PIN
NAME
NO.
TYPE (1)
DESCRIPTION
RT_CLK
1
I
Resistor timing and external clock for buck regulator. Resistor should connect to GND (PowerPAD™)
with very short trace to reduce the potential clock jitter due to noise.
COMP
2
O
Buck error amplifier output and input to the output switch current comparator.
VSENSE
3
I
Buck output voltage sense pin. Inverting node of error amplifier.
PWRGD
4
O
An open-drain output with external pullup resistor required. Asserts low if buck output voltage is low
due to thermal shutdown, dropout, overvoltage, or EN_BUCK shut down
nOCTW
5
O
Overcurrent and/or overtemperature warning indicator. This output is open drain with external pullup
resistor required. Programmable output mode via SPI registers.
nFAULT
6
O
Fault report indicator. This output is open drain with external pullup resistor required.
DTC
7
I
Dead-time adjustment with external resistor to GND
nSCS
8
I
SPI chip select
SDI
9
I
SPI input
SDO
10
O
SPI output
(1)
KEY: I =Input, O = Output, P = Power
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SLOS719F – AUGUST 2011 – REVISED JANUARY 2016
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Pin Functions (continued)
PIN
NAME
NO.
TYPE (1)
DESCRIPTION
SCLK
11
I
SPI clock signal
DC_CAL
12
I
When DC_CAL is high, device shorts inputs of shunt amplifiers and disconnects loads. DC offset
calibration can be done through external microcontroller.
GVDD
13
P
Internal gate driver voltage regulator. GVDD cap should connect to GND
CP1
14
P
Charge pump pin 1, ceramic capacitor should be used between CP1 and CP2
CP2
15
P
Charge pump pin 2, ceramic capacitor should be used between CP1 and CP2
EN_GATE
16
I
Enable gate driver and current shunt amplifiers. Control buck through EN_BUCK pin.
INH_A
17
I
PWM input signal (high side), half-bridge A
INL_A
18
I
PWM input signal (low side), half-bridge A
INH_B
19
I
PWM input signal (high side), half-bridge B
INL_B
20
I
PWM input signal (low side), half-bridge B
INH_C
21
I
PWM input signal (high side), half-bridge C
INL_C
22
I
PWM input signal (low side), half-bridge C
DVDD
23
P
Internal 3.3-V supply voltage. DVDD cap should connect to AGND. This is an output, but not specified
to drive external circuitry.
REF
24
I
Reference voltage to set output of shunt amplifiers with a bias voltage which equals to half of the
voltage set on this pin. Connect to ADC reference in microcontroller.
SO1
25
O
Output of current amplifier 1
SO2
26
O
Output of current amplifier 2
AVDD
27
P
Internal 6-V supply voltage, AVDD cap should always be installed and connected to AGND. This is an
output, but not specified to drive external circuitry.
AGND
28
P
Analog ground pin. Connect directly to GND (PowerPAD).
PVDD1
29
P
Power supply pin for gate driver, current shunt amplifier, and SPI communication. PVDD1 is
independent of buck power supply, PVDD2. PVDD1 cap should connect to GND
SP2
30
I
Input of current amplifier 2 (connecting to positive input of amplifier). Recommend to connect to ground
side of the sense resistor for the best common mode rejection.
SN2
31
I
Input of current amplifier 2 (connecting to negative input of amplifier).
SP1
32
I
Input of current amplifier 1 (connecting to positive input of amplifier). Recommend to connect to ground
side of the sense resistor for the best common mode rejection.
SN1
33
I
Input of current amplifier 1 (connecting to negative input of amplifier).
SL_C
34
I
Low-Side MOSFET source connection, half-bridge C. Low-side VDS measured between this pin and
SH_C.
GL_C
35
O
Gate drive output for low-side MOSFET, half-bridge C
SH_C
36
I
High-side MOSFET source connection, half-bridge C. High-side VDS measured between this pin and
PVDD1.
GH_C
37
O
Gate drive output for high-side MOSFET, half-bridge C
BST_C
38
P
Bootstrap cap pin for half-bridge C
SL_B
39
I
Low-side MOSFET source connection, half-bridge B. Low-side VDS measured between this pin and
SH_B.
GL_B
40
O
Gate drive output for low-side MOSFET, half-bridge B
SH_B
41
I
High-side MOSFET source connection, half-bridge B. High-side VDS measured between this pin and
PVDD1.
GH_B
42
O
Gate drive output for high-side MOSFET, half-bridge B
BST_B
43
P
Bootstrap cap pin for half-bridge B
SL_A
44
I
Low-side MOSFET source connection, half-bridge A. Low-side VDS measured between this pin and
SH_A.
GL_A
45
O
Gate drive output for low-side MOSFET, half-bridge A
SH_A
46
I
High-side MOSFET source connection, half-bridge A. High-side VDS measured between this pin and
PVDD1.
GH_A
47
O
Gate drive output for high-side MOSFET, half-bridge A
4
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SLOS719F – AUGUST 2011 – REVISED JANUARY 2016
Pin Functions (continued)
PIN
NAME
NO.
TYPE (1)
DESCRIPTION
BST_A
48
P
Bootstrap cap pin for half-bridge A
VDD_SPI
49
I
SPI supply pin to support 3.3-V or 5-V logic. Connect to the same supply that the MCU uses for SPI
operation.
PH
50, 51
O
The source of the internal high side MOSFET of buck converter
BST_BK
52
P
Bootstrap cap pin for buck converter
PVDD2
53, 54
P
Power supply pin for buck converter, PVDD2 cap should connect to GND.
EN_BUCK
55
I
Enable buck converter. Internal pullup current source. Pull below 1.2 V to disable. Float to enable.
Adjust the input undervoltage lockout with two resistors
SS_TR
56
I
Buck soft-start and tracking. An external capacitor connected to this pin sets the output rise time.
Because the voltage on this pin overrides the internal reference, it can be used for tracking and
sequencing. Cap should connect to GND
GND
(PowerPAD)
57
P
GND pin. The exposed power pad must be electrically connected to ground plane through soldering to
PCB for proper operation and connected to bottom side of PCB through vias for better thermal
spreading.
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SLOS719F – AUGUST 2011 – REVISED JANUARY 2016
www.ti.com
6 Specifications
6.1 Absolute Maximum Ratings
see
(1)
VPVDD
Supply voltage
Relative to PGND
Maximum supply voltage ramp rate
Voltage rising up to PVDDMAX
MIN
MAX
UNIT
–0.3
65
V
1
V/µS
–0.3
0.3
V
–1
1
mA
VPGND
Maximum voltage between PGND and GND
IIN_MAX
Maximum current for all digital and analog inputs (INH_A, INL_A, INH_B, INL_B,
INH_C, INL_C, SCLK, SCS, SDI, EN_GATE, DC_CAL, DTC)
ISINK_MAX
Maximum sinking current for open-drain pins (nFAULT and nOCTW Pins)
7
mA
VOPA_IN
Voltage for SPx and SNx pins
–0.6
0.6
V
VLOGIC
Input voltage range for logic/digital pins (INH_A, INL_A, INH_B, INL_B, INH_C,
INL_C, EN_GATE, SCLK, SDI, SCS, DC_CAL)
–0.3
7
V
VGVDD
Maximum voltage for GVDD pin
13.2
V
VAVDD
Maximum voltage for AVDD pin
8
V
VDVDD
Maximum voltage for DVDD pin
3.6
V
VVDD_SPI
Maximum voltage for VDD_SPI pin
7
V
VSDO
Maximum voltage for SDO pin
VDD_SPI + 0.3
V
VREF
Maximum reference voltage for current amplifier
IREF
Maximum current for REF pin
TJ
Maximum operating junction temperature
Tstg
Storage temperature
(1)
7
V
100
µA
–40
150
°C
–55
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
6
Electrostatic
discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1)
±2000
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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SLOS719F – AUGUST 2011 – REVISED JANUARY 2016
6.3 Recommended Operating Conditions
VPVDD1
DC supply voltage PVDD1 for normal operation
VPVDD2
DC supply voltage PVDD2 for buck converter
IDIN_EN
Input current of digital pins when EN_GATE is high
IDIN_DIS
Input current of digital pins when EN_GATE is low
CO_OPA
Maximum output capacitance on outputs of shunt amplifier
RDTC
Dead time control resistor range. Time range is 50 ns (-GND) to 500 ns (150 kΩ) with a linear
approximation.
IFAULT
nFAULT pin sink current, open-drain
IOCTW
nFAULT pin sink current, open-drain
VREF
External voltage reference voltage for current shunt amplifiers
ƒgate
Operating switching frequency of gate driver
Igate
Total average gate drive current
TA
Ambient temperature
MIN
MAX
6
60
3.5
60
V
100
µA
Relative to PGND
UNIT
V
1
µA
20
pF
150
kΩ
V = 0.4 V
2
mA
V = 0.4 V
2
mA
6
V
0
2
Qg(TOT) = 25 nC or total 30-mA gate
drive average current
–40
200
kHz
30
mA
125
°C
6.4 Thermal Information
DRV8301
THERMAL METRIC (1)
DCA (HTSSOP)
UNIT
56 PINS
RθJA
Junction-to-ambient thermal resistance
30.3
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
33.5
°C/W
RθJB
Junction-to-board thermal resistance
17.5
°C/W
ψJT
Junction-to-top characterization parameter
0.9
°C/W
ψJB
Junction-to-board characterization parameter
7.2
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
0.9
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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6.5 Electrical Characteristics
PVDD = 6 to 60 V, TC = 25°C, unless specified under test condition
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT PINS: INH_X, INL_X, nSCS, SDI, SCLK, EN_GATE, DC_CAL
VIH
High input threshold
VIL
Low input threshold
2
V
0.8
V
RPULL_DOWN – INTERNAL PULLDOWN RESISTOR FOR GATE DRIVER INPUTS
REN_GATE
Internal pulldown resistor for EN_GATE
RINH_X
Internal pulldown resistor for high-side PWMs
(INH_A, INH_B, and INH_C)
100
kΩ
EN_GATE high
100
kΩ
RINH_X
Internal pulldown resistor for low-side PWMs
(INL_A, INL_B, and INL_C)
EN_GATE high
100
kΩ
RnSCS
Internal pulldown resistor for nSCS
EN_GATE high
100
kΩ
RSDI
Internal pulldown resistor for SDI
EN_GATE high
100
kΩ
RDC_CAL
Internal pulldown resistor for DC_CAL
EN_GATE high
100
kΩ
RSCLK
Internal pulldown resistor for SCLK
EN_GATE high
100
kΩ
OUTPUT PINS: nFAULT AND nOCTW
VOL
Low output threshold
IO = 2 mA
VOH
High output threshold
External 47 kΩ pullup resistor connected
to 3-5.5 V
0.4
IOH
Leakage Current on Open-Drain Pins When
Logic High nFAULT and nOCTW)
2.4
V
V
1
µA
GATE DRIVE OUTPUT: GH_A, GH_B, GH_C, GL_A, GL_B, GL_C
VGX_NORM
VGX_MIN
Gate driver Vgs voltage
Gate driver Vgs voltage
PVDD = 8 to 60 V, Igate = 30 mA,
CCP = 22 nF
9.5
11.5
PVDD = 8 to 60 V, Igate = 30 mA,
CCP = 220 nF
9.5
11.5
PVDD = 6 to 8 V, Igate = 15 mA,
CCP = 22 nF
8.8
PVDD = 6 to 8 V, Igate = 30 mA,
CCP = 220 nF
8.3
V
V
Ioso1
Maximum source current setting 1, peak
Vgs of FET equals to 2 V. REG 0x02
1.7
A
Iosi1
Maximum sink current setting 1, peak
Vgs of FET equals to 8 V. REG 0x02
2.3
A
Ioso2
Source current setting 2, peak
Vgs of FET equals to 2 V. REG 0x02
0.7
A
Iosi2
Sink current setting 2, peak
Vgs of FET equals to 8 V. REG 0x02
1
A
Ioso3
Source current setting 3, peak
Vgs of FET equals to 2 V. REG 0x02
0.25
A
Iosi3
Sink current setting 3, peak
Vgs of FET equals to 8 V. REG 0x02
0.5
A
Rgate_off
Gate output impedence during standby mode
when EN_GATE low (pins GH_x, GL_x)
1.6
2.4
kΩ
50
µA
SUPPLY CURRENTS
IPVDD1_STB
PVDD1 supply current, standby
EN_GATE is low. PVDD1 = 8 V.
20
IPVDD1_OP
PVDD1 supply current, operating
EN_GATE is high, no load on gate drive
output, switching at 10 kHz,
100 nC gate charge
15
IPVDD1_HIZ
PVDD1 Supply current, Hi-Z
EN_GATE is high, gate not switching
mA
2
5
10
PVDD = 8 to 60 V
6
6.5
7
PVDD = 6 to 60 V
5.5
mA
INTERNAL REGULATOR VOLTAGE
AVDD
AVDD voltage
DVDD
DVDD voltage
3
6
3.3
3.6
V
V
VOLTAGE PROTECTION
VPVDD_UV
Undervoltage protection limit, PVDD
VGVDD_UV
Undervoltage protection limit, GVDD
8
PVDD falling
5.9
PVDD rising
6
GVDD falling
8
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Electrical Characteristics (continued)
PVDD = 6 to 60 V, TC = 25°C, unless specified under test condition
PARAMETER
VGVDD_OV
TEST CONDITIONS
MIN
Overvoltage protection limit, GVDD
TYP
MAX
16
UNIT
V
CURRENT PROTECTION, (VDS SENSING)
PVDD = 8 to 60 V
0.125
2.4
0.125
1.491
VDS_OC
Drain-source voltage protection limit
Toc
OC sensing response time
1.5
µs
TOC_PULSE
nOCTW pin reporting pulse stretch length for
OC event
64
µs
PVDD = 6 to 8 V
(1)
V
TEMPERATURE PROTECTION
OTW_CLR
Junction temperature for resetting
overtemperature warning
115
°C
OTW_SET/O
TSD_CLR
Junction temperature for overtemperature
warning and resetting over temperature shut
down
130
°C
OTSD_SET
Junction temperature for overtemperature shut
down
150
°C
(1)
Reduced AVDD voltage range results in limitations on settings for overcurrent protection. See Table 13.
6.6 Current Shunt Amplifier Characteristics
TC = 25°C unless otherwise specified
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
G1
Gain option 1
TC = –40°C to 125°C
9.5
10
10.5
V/V
G2
Gain option 2
TC = –40°C to 125°C
18
20
21
V/V
G3
Gain Option 3
TC = –40°C to 125°C
38
40
42
V/V
G4
Gain Option 4
TC = –40°C to 125°C
75
80
85
V/V
tsettling
Settling time to 1%
TC = 0 to 60°C, G = 10, Vstep = 2 V
300
ns
tsettling
Settling time to 1%
TC = 0 to 60°C, G = 20, Vstep = 2 V
600
ns
tsettling
Settling time to 1%
TC = 0 to 60°C, G = 40, Vstep = 2 V
1.2
µs
tsettling
Settling time to 1%
TC = 0 to 60°C, G = 80, Vstep = 2 V
Vswing
Output swing linear range
Slew rate
2.4
0.3
G = 10
DC_offset
Offset error RTI
Drift_offset
Offset drift RTI
Ibias
Input bias current
Vin_com
Common input mode range
Vin_dif
Differential input range
µs
5.7
10
G = 10 with input shorted
4
10
Vo_bias
Output bias
With zero input current, Vref up to 6 V
CMRR_OV
Overall CMRR with gain resistor
mismatch
CMRR at DC, gain = 10
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mV
µV/C
100
µA
–0.15
0.15
V
–0.3
0.3
V
0.5%
V
–0.5%
0.5 ×
Vref
70
85
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V
V/µs
dB
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6.7 Buck Converter Characteristics
TC = 25°C unless otherwise specified
PARAMETER
TEST CONDITIONS
MIN
TYP
VUVLO
Internal undervoltage lockout threshold
No voltage hysteresis, rising and falling
2.5
ISD(PVDD2)
Shutdown supply current
EN = 0 V, 25°C, 3.5 V ≤ VIN ≤ 60 V
1.3
INON_SW(PVDD2)
Operating: nonswitching supply current
VSENSE = 0.83 V, VIN = 12 V
VEN_BUCK
Enable threshold voltage
No voltage hysteresis, rising and falling
RDS_ON
On-resistance
VIN = 3.5 V, BOOT-PH = 3 V
ILIM
Current limit threshold
VIN = 12 V, TJ = 25°C
OTSD_BK
Thermal shutdown
Fsw
Switching frequency
PWRGD
1.11
MAX
V
4
µA
116
136
µA
1.25
1.36
V
300
1.8
RT = 200 kΩ
450
UNIT
mΩ
2.7
A
182
°C
581
720
kHz
VSENSE falling
92%
VSENSE rising
94%
VSENSE rising
109%
VSENSE falling
107%
Hysteresis
VSENSE falling
2%
Output high leakage
VSENSE = VREF, V(PWRGD) = 5.5 V,
25°C
10
nA
On resistance
I(PWRGD) = 3 mA, VSENSE < 0.79 V
50
Ω
VSENSE threshold
6.8 SPI Timing Requirements (Slave Mode Only)
PARAMETER
TEST CONDITIONS
MIN
NOM
MAX
5
10
UNIT
tSPI_READY
SPI ready after EN_GATE transitions to
HIGH
tCLK
Minimum SPI clock period
tCLKH
Clock high time
See Figure 1
40
tCLKL
Clock low time
See Figure 1
40
tSU_SDI
SDI input data setup time
20
ns
tHD_SDI
SDI input data hold time
30
ns
tD_SDO
SDO output data delay time, CLK high to
SDO valid
CL = 20 pF
tHD_SDO
SDO output data hold time
See Figure 1
40
tSU_SCS
SCS setup time
See Figure 1
50
ns
tHD_SCS
SCS hold time
50
ns
tHI_SCS
SCS minimum high time before SCS active
low
40
ns
tACC
SCS access time, SCS low to SDO out of
high impedance
10
ns
tDIS
SCS disable time, SCS high to SDO high
impedance
10
ns
10
PVDD > 6 V
100
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ns
20
ns
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6.9 Gate Timing and Protection Switching Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TIMING, OUTPUT PINS
tpd,If-O
Positive input falling to GH_x falling
CL = 1 nF, 50% to 50%
45
tpd,Ir-O
Positive input rising to GL_x falling
CL = 1 nF, 50% to 50%
45
ns
td_min
Minimum dead time after hand shaking (1)
tdtp
Dead time
With RDTC set to different values
tGDr
Rise time, gate drive output
CL = 1 nF, 10% to 90%
25
ns
tGDF
Fall time, gate drive output
CL = 1 nF, 90% to 10%
25
ns
tON_MIN
Minimum on pulse
Not including handshake
communication. Hi-Z to on state,
output of gate driver
tpd_match
tdt_match
ns
50
50
ns
500
ns
50
ns
Propagation delay matching between high
side and low side
5
ns
Deadtime matching
5
ns
10
ms
10
µs
TIMING, PROTECTION, AND CONTROL
PVDD is up before start-up, all charge
pump caps and regulator caps as in
recommended condition
tpd,R_GATE-OP
Start-up time, from EN_GATE active high
to device ready for normal operation
tpd,R_GATE-Quick
If EN_GATE goes from high to low and
back to high state within quick reset time, it
will only reset all faults and gate driver
Maximum low pulse time
without powering down charge pump,
current amp, and related internal voltage
regulators.
tpd,E-L
Delay, error event to all gates low
200
ns
tpd,E-FAULT
Delay, error event to nFAULT low
200
ns
(1)
5
Dead time programming definition: Adjustable delay from GH_X falling edge to GL_X rising edge, and GL_X falling edge to GH_X rising
edge. In 6-PWM input mode, this adjustable value is added to the timing delay between inputs as set by the microcontroller externally.
tHI_SCS
_
tHD_SCS
tSU_SCS
SCS
tCLK
SCLK
tCLKH
tCLKL
MSB in
(must be valid)
SDI
tSU_SDI
SDO
LSB
tHD_SDI
MSB out (is valid)
Z
tACC
tD_SDO
LSB
Z
tDIS
tHD_SDO
Figure 1. SPI Slave Mode Timing Definition
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SCS
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2
3
4
X
15
16
SCLK
SDI
MSB
LSB
SDO
MSB
LSB
Receive
latch Points
Figure 2. SPI Slave Mode Timing Diagram
10.0
12.0
9.8
11.8
9.6
11.6
9.4
11.4
GVDD (V)
IPVDD1 (µA)
6.10 Typical Characteristics
9.2
9.0
8.8
11.2
11.0
10.8
8.6
10.6
8.4
10.4
8.2
10.2
10.0
8.0
-40
0
25
85
-40
125
Temperature (ƒC)
0
25
Temperature (ƒC)
C001
85
125
C002
Figure 4. GVDD vs Temperature (PVDD1 = 8 V, EN_GATE =
HIGH)
Figure 3. IPVDD1 vs Temperature (PVDD1 = 8 V, EN_GATE =
LOW)
12.0
11.8
11.6
GVDD (V)
11.4
11.2
11.0
10.8
10.6
10.4
10.2
10.0
-40
0
25
85
Temperature (ƒC)
125
C001
Figure 5. GVDD vs Temperature (PVDD1 = 60 V, EN_GATE = HIGH)
12
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7 Detailed Description
7.1 Overview
The DRV8301 is a 6-V to 60-V gate driver IC for three-phase motor drive applications. This device reduces
external component count by integrating three half-bridge drivers, two current shunt amplifiers, and a switching
buck converter. The DRV8301 provides overcurrent, overtemperature, and undervoltage protection. Fault
conditions are indicated through the nFAULT and nOCTW pins in addition to the SPI registers.
Adjustable dead time control and peak gate drive current allows for finely tuning the switching of the external
MOSFETs. Internal hand-shaking is used to prevent flow of current.
VDS sensing of the external MOSFETs allows for the DRV8301 to detect overcurrent conditions and respond
appropriately. Individual MOSFET overcurrent conditions are reported through the SPI status registers.
The highly configurable buck converter can support a wide range of output options. This allows the DRV8301 to
provide a power supply rail for the controller and lower voltage components.
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7.2 Functional Block Diagram
PVDD2
DRV8301
PVDD2
EN_BUCK
VSENSE
PWRGD
VCC
BST_BK
Buck Converter
COMP
PH
SS_TR
RT_CLK
GVDD
GVDD
DVDD
DVDD
AVDD
Trickle Charge
DVDD
LDO
AVDD
LDO
Trickle
Charge
DVDD
CP1
AVDD
AGND
AVDD
Charge
Pump
Regulator
CP2
PVDD1
PVDD1
PVDD1
AGND
GVDD Trickle Charge
BST_A
PVDD1
AGND
nOCTW
HS VDS
Sense
HS
LS VDS
Sense
GVDD
GH_A
SH_A
nFAULT
nSCS
SPI
Communication,
Registers, and
Fault Handling
SDI
LS
GL_A
SL_A
PVDD1
SDO
GVDD Trickle Charge
BST_B
PVDD1
SCLK
VDD_SPI
HS VDS
Sense
HS
LS VDS
Sense
GVDD
GH_B
SH_B
EN_GATE
LS
INH_A
GL_B
SL_B
PVDD1
INL_A
GVDD Trickle Charge
BST_C
PVDD1
INH_B
Gate Driver
Control and
Timing Logic
INL_B
HS VDS
Sense
HS
LS VDS
Sense
GVDD
GH_C
SH_C
INH_C
INL_C
LS
DTC
GL_C
SL_C
REF
REF
SO1
SN1
Offset
½ REF
Current Sense
Amplifier 1
Offset
½ REF
Current Sense
Amplifier 2
SP1
RISENSE
REF
GND
DC_CAL
REF
SN2
SP2
RISENSE
SO2
GND
(PWR_PAD)
GND
PGND
AGND
14
GND
PGND
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7.3 Feature Description
7.3.1 Three-Phase Gate Driver
The half-bridge drivers use a bootstrap configuration with a trickle charge pump to support 100% duty cycle
operation. Each half-bridge is configured to drive two N-channel MOSFETs, one for the high-side and one for the
low-side. The half-bridge drivers can be used in combination to drive a 3-phase motor or separately to drive
various other loads.
The peak gate drive current and internal dead times are adjustable to accommodate a variety of external
MOSFETs and applications. The peak gate drive current is set through a register setting and the dead time is
adjusted with an external resistor on the DTC pin. Shorting the DTC pin to ground will provide the minimum dead
time (50ns). There is an internal hand shake between the high side and low side MOSFETs during switching
transitions to prevent current shoot through.
The three-phase gate driver can provide up to 30mA of average gate drive current. This will support switching
frequencies up to 200 kHz when the MOSFET Qg = 25nC.
Each MOSFET gate driver has a VDS sensing circuit for overcurrent protection. The sense circuit measures the
voltage from the drain to the source of the external MOSFETs while the MOSFET is enabled. This voltage is
compared against the programmed trip point to determine if an overcurrent event has occurred. The high-side
sense is between the PVDD1 and SH_X pins. The low-side sense is between the SH_X and SL_X pins.
Ensuring a differential, low impedance connection to the external MOSFETs for these lines will help provide
accurate VDS sensing.
The DRV8301 allows for both 6-PWM and 3-PWM control through a register setting.
Table 1. 6-PWM Mode
INL_X
INH_X
GL_X
GH_X
0
0
L
L
0
1
L
H
1
0
H
L
1
1
L
L
Table 2. 3-PWM Mode
INL_X
INH_X
GL_X
GH_X
X
0
H
L
X
1
L
H
Table 3. Gate Driver External Components
NAME
(1)
PIN 1
PIN 2
RECOMMENDED
RnOCTW
nOCTW
VCC
(1)
RnFAULT
nFAULT
VCC
(1)
RDTC
DTC
GND (PowerPAD)
0 to 150 kΩ (50 ns to 500 ns)
CGVDD
GVDD
GND (PowerPAD)
2.2 µF (20%) ceramic, ≥ 16 V
CCP
CP1
CP2
CDVDD
DVDD
AGND
1 µF (20%) ceramic, ≥ 6.3 V
CAVDD
AVDD
AGND
1 µF (20%) ceramic, ≥ 10 V
CPVDD1
PVDD1
GND (PowerPAD)
CBST_X
BST_X
SH_X
≥10 kΩ
≥10 kΩ
0.022 µF (20%) ceramic, rated for PVDD1
≥4.7 µF (20%) ceramic, rated for PVDD1
0.1 µF (20%) ceramic, ≥ 16 V
VCC is the logic supply to the MCU
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7.3.2 Current Shunt Amplifiers
The DRV8301 includes two high-performance current shunt amplifiers to accurate low-side, inline current
measurement.
The current shunt amplifiers have four programmable GAIN settings through the SPI registers. These are 10, 20,
40, and 80 V/V.
The current shunt amplifiers provide output offset up to 3V to support bidirectional current sensing. The offset is
set to half the voltage on the reference pin (REF).
To minimize DC offset and drift overtemperature, a calibration method is provided through either the DC_CAL pin
or SPI register. When DC calibration is enabled, the device will short the input of the current shunt amplifier and
disconnect the load. DC calibration can be done at any time, even during MOSFET switching, because the load
is disconnected. For the best results, perform the DC calibration during the switching OFF period, when no load
is present, to reduce the potential noise impact to the amplifier.
The output of the current shunt amplifier can be calculated as:
V
VO = REF - G ´ (SNX - SPX )
2
where
•
•
•
VREF is the reference voltage (REF pin)
G is the gain of the amplifier (10, 20, 40, or 80 V/V)
SNX and SPX are the inputs of channel x. SPX should connect to the ground side of the sense resistor for the
best common mode rejection.
(1)
Figure 6 shows the current shunt amplifier simplified block diagram.
DC_CAL
SN
400 kW
S4
200 kW
S3
100 kW
S2
50 kW
S1
5 kW
AVDD
_
100 W
DC_CAL
SO
5 kW
+
SP
50 kW
S1
100 kW
S2
200 kW
S3
400 kW
S4
DC_CAL
Vref /2
REF
_
AVDD
50 kW
+
50 kW
Figure 6. Current Shunt Amplifier Simplified Block Diagram
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7.3.3 Buck Converter
Table 4. Buck Regulator External Components
(1)
NAME
PIN 1
PIN 2
RRT_CLK
RT_CLK
GND (PowerPAD)
See Buck Converter
CCOMP
COMP
GND (PowerPAD)
See Buck Converter
RCCOMP
COMP
GND (PowerPAD)
See Buck Converter
RVSENSE1
PH (Filtered)
VSENSE
See Buck Converter
RVSENSE2
VSENSE
GND (PowerPAD)
See Buck Converter
RPWRGD
PWRGD
LPH
PH
PH (Filtered)
See Buck Converter
DPH
PH
GND (PowerPAD)
See Buck Converter
CPH
PH (Filtered)
GND (PowerPAD)
See Buck Converter
CBST_BK
BST_BK
PH
See Buck Converter
CPVDD2
PVDD2
GND (PowerPAD)
≥4.7 µF (20%) ceramic, rated for PVDD2
CSS_TR
SS_TR
GND (PowerPAD)
See Buck Converter
VCC
(1)
RECOMMENDED
≥ 10 kΩ
VCC is the logic supply to the MCU
7.3.4 Protection Features
7.3.4.1 Overcurrent Protection and Reporting (OCP)
To protect the power stage from damage due to excessive currents, VDS sensing circuitry is implemented in the
DRV8301. Based on the RDS(on) of the external MOSFETs and the maximum allowed IDS, a voltage threshold can
be determined to trigger the overcurrent protection features when exceeded. The voltage threshold is
programmed through the SPI registers. Overcurrent protection should be used as a protection scheme only; it is
not intended as a precise current regulation scheme. There can be up to a 20% tolerance across channels for
the VDS trip point.
VDS = IDS × RDS(on)
(2)
The VDS sense circuit measures the voltage from the drain to the source of the external MOSFET while the
MOSFET is enabled. The high-side sense is between the PVDD1 and SH_X pins. The low-side sense is
between the SH_X and SL_X pins. Ensuring a differential, low impedance connection to the external MOSFETs
for these lines will help provide accurate VDS sensing.
Four different overcurrent modes (OC_MODE) can be set through the SPI registers. The OC status bits operate
in latched mode. When an overcurrent condition occurs the corresponding OC status bit will latch in the
DRV8301 registers until the next SPI read command. After the read command the OC status bit will clear from
the register until another overcurrent condition occurs.
1. Current limit mode
In current limit mode the device uses current limiting instead of device shutdown during an overcurrent event.
In this mode the device reports overcurrent events through the nOCTW pin. The nOCTW pin will be held low
for a maximum 64-µs period (internal timer) or until the next PWM cycle. If another overcurrent event is
triggered from another MOSFET, during a previous overcurrent event, the reporting will continue for another
64-µs period (internal timer will restart) or until both PWM signals cycle. The associated status bit will be
asserted for the MOSFET in which the overcurrent was detected.
There are two current control settings in current limit mode. These are set by one bit in the SPI registers. The
default mode is cycle by cycle (CBC).
– Cycle by cycle mode (CBC): In CBC mode, the MOSFET on which overcurrent has been detected on will
shut off until the next PWM cycle.
– Off-Time Control Mode: In Off-Time mode, the MOSFET in which overcurrent has been detected is
disabled for a 64-µs period (set by internal timer). If overcurrent is detected in another MOSFET, the
timer will be reset for another 64-µs period and both MOSFETs will be disabled for the duration. During
this period, normal operation can be restored for a specific MOSFET with a corresponding PWM cycle.
2. OC latch shut down mode
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When an overcurrent event occurs, both the high-side and low-side MOSFETs will be disabled in the
corresponding half-bridge. The nFAULT pin and nFAULT status bits will be asserted along with the
associated status bit for the MOSFET in which the overcurrent was detected. The OC status bit will latch until
the next SPI read command. The nFAULT pin and nFAULT status bit will latch until a reset is received
through the GATE_RESET bit or a quick EN_GATE reset pulse.
3. Report only mode
No protective action will be taken in this mode when an overcurrent event occurs. The overcurrent event will
be reported through the nOCTW pin (64-µs pulse) and SPI status register. The external MCU should take
action based on its own control algorithm.
4. OC disabled mode
The device will ignore and not report all overcurrent detections.
7.3.4.2 Undervoltage Protection (PVDD_UV and GVDD_UV)
To protect the power output stage during start-up, shutdown, and other possible undervoltage conditions, the
DRV8301 provides undervoltage protection by driving the gate drive outputs (GH_X, GL_X) low whenever PVDD
or GVDD are below their undervoltage thresholds (PVDD_UV/GVDD_UV). This will put the external MOSFETs in
a high impedance state. When the device is in PVDD_UV it will not respond to SPI commands and the SPI
registers will revert to their default settings.
A specific PVDD1 undervoltage transient brownout from 13 µs to 15 µs can cause the DRV8301 to become
unresponsive to external inputs until a full power cycle. The transient condition consists of having PVDD1 greater
than the PVDD_UV level and then PVDD1 dropping below the PVDD_UV level for a specific period of 13 µs to
15 µs. Transients shorter or longer than 13 to 15 µs will not affect the normal operation of the undervoltage
protection. Additional bulk capacitance can be added to PVDD1 to reduce undervoltage transients.
7.3.4.3 Overvoltage Protection (GVDD_OV)
The device will shut down both the gate driver and charge pump if the GVDD voltage exceeds the GVDD_OV
threshold to prevent potential issues related to the GVDD pin or the charge pump (e.g. short of external GVDD
cap or charge pump). The fault is a latched fault and can only be reset through a reset transition on the
EN_GATE pin.
7.3.4.4 Overtemperature Protection
A two-level overtemperature detection circuit is implemented:
• Level 1: Overtemperature warning (OTW)
OTW is reported through the nOCTW pin (overcurrent and/or overtemperature warning) for default settings.
OCTW pin can be set to report OTW or OCW only through the SPI registers. See SPI Register section.
• Level 2: Over Temperature Latched Shut Down of Gate Driver and Charge Pump (OTSD_GATE)
OTSD_GATE is reported through the nFAULT pin. This is a latched shut down, so the gate driver will not
recover automatically, even if the overtemperature condition is not present anymore. An EN_GATE reset or
SPI (RESET_GATE) is required to recover the gate driver to normal operation after the temperature goes
below a preset value, tOTSD_CLR.
SPI operation is still available and register settings will be remaining in the device during OTSD operation as long
as PVDD1 is within the defined operation range.
7.3.4.5 Fault and Protection Handling
The nFAULT pin indicates when a shutdown event has occurred. These events include overcurrent,
overtemperature, overvoltage, or undervoltage. Note that nFAULT is an open-drain signal. nFAULT will go high
when the gate driver is ready for PWM inputs during start-up.
The nOCTW pin indicates when a overcurrent event or over temperature event has occurred. These events are
not necessary related to a shutdown.
Table 5 provides a summary of all the protection features and their reporting structure.
18
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Table 5. Fault and Warning Reporting and Handling
EVENT
ACTION
LATCH
REPORTING ON
nFAULT PIN
REPORTING ON
nOCTW PIN
REPORTING IN SPI
STATUS REGISTER
PVDD
undervoltage
External FETs Hi-Z;
Weak pulldown of all gate
driver output
N
Y
N
Y
DVDD
undervoltage
External FETs Hi-Z;
Weak pulldown of all gate
driver output; When recovering,
reset all status registers
N
Y
N
N
GVDD
undervoltage
External FETs Hi-Z;
Weak pulldown of all gate
driver output
N
Y
N
Y
External FETs Hi-Z;
Weak pull down of all gate driver
output
Shut down the charge pump
Won’t recover and reset through
SPI reset command or
quick EN_GATE toggling
Y
Y
N
Y
None
N
N
Y (in default
setting)
Y
OTSD_GATE
Gate driver latched shut down.
Weak pulldown of all gate driver
output
to force external FETs Hi-Z
Shut down the charge pump
Y
Y
Y
Y
OTSD_BUCK
OTSD of Buck
Y
N
N
N
Buck output
undervoltage
UVLO_BUCK: auto-restart
N
Y (PWRGD pin)
N
N
Buck overload
Buck current limiting
(Hi-Z high side until current reaches
zero and then auto-recovering)
N
N
N
N
External FET
overload – current
limit mode
External FETs current Limiting
(only OC detected FET)
N
N
Y
Y
External FET
overload – Latch
mode
Weak pulldown of gate driver
output and PWM logic “0” of
LS and HS in the same phase.
External FETs Hi-Z
Y
Y
Y
Y
Reporting only
N
N
Y
Y
GVDD
overvoltage
OTW
External FET
overload –
reporting only
mode
7.3.5 Start-up and Shutdown Sequence Control
During power up all gate drive outputs are held low. Normal operation of gate driver and current shunt amplifiers
can be initiated by toggling EN_GATE from a low state to a high state. If no errors are present, the DRV8301 is
ready to accept PWM inputs. Gate driver always has control of the power FETs even in gate disable mode as
long as PVDD is within functional region.
There is an internal diode from SDO to VDD_SPI, so VDD_SPI is required to be powered to the same power
level as other SPI devices (if there is any SDO signal from other devices) all the time. VDD_SPI supply should
be powered up first before any signal appears at SDO pin and powered down after completing all
communications at SDO pin.
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7.4 Device Functional Modes
7.4.1 EN_GATE
EN_GATE low is used to put gate driver, charge pump, current shunt amplifier, and internal regulator blocks into
a low-power consumption mode to save energy. SPI communication is not supported during this state and the
SPI registers will revert to their default settings after a full EN_GATE reset. The device will put the MOSFET
output stage to high-impedance mode as long as PVDD is still present.
When the EN_GATE pin goes low to high, it will go through a power-up sequence, and enable gate driver,
current amplifiers, charge pump, internal regulator, and so forth and reset all latched faults related to gate driver
block. The EN_GATE will also reset status registers in the SPI table. All latched faults can be reset when
EN_GATE is toggled after an error event unless the fault is still present.
When EN_GATE goes from high to low, it will shut down gate driver block immediately, so gate output can put
external FETs in high impedance mode. It will then wait for 10 µs before completely shutting down the rest of the
blocks. A quick fault reset mode can be done by toggling EN_GATE pin for a very short period (less than 10 µs).
This will prevent the device from shutting down the other functional blocks such as charge pump and internal
regulators and bring a quicker and simple fault recovery. SPI will still function with such a quick EN_GATE reset
mode. To perform a full reset, EN_GATE should be toggled for longer than 20 µs. This allows for all of the blocks
to completely shut down and reach known states.
An EN_GATE reset pulse (high → low → high) from 10 to 20 µs should not be applied to the EN_GATE pin. The
DRV8301 has a transition area from the quick to full reset modes that can cause the device to become
unresponsive to external inputs until a full power cycle. An RC filter can be added externally to the pin if reset
pulses with this period are expected to occur on the EN_GATE pin.
The other way to reset all of the faults is to use SPI command (RESET_GATE), which will only reset gate driver
block and all the SPI status registers without shutting down the other functional blocks.
One exception is to reset a GVDD_OV fault. A quick EN_GATE quick fault reset or SPI command reset will not
work with GVDD_OV fault. A complete EN_GATE with low level holding longer than 20 µs is required to reset
GVDD_OV fault. TI highly recommends to inspect the system and board when GVDD_OV occurs.
7.4.2 DTC
Dead time can be programmed through DTC pin. A resistor should be connected from DTC to ground to control
the dead time. Dead time control range is from 50 ns to 500 ns. Short DTC pin to ground will provide minimum
dead time (50 ns). Resistor range is 0 to 150 kΩ. Dead time is linearly set over this resistor range.
Current shoot through prevention protection will be enabled in the device all time independent of dead time
setting and input mode setting.
7.4.3 VDD_SPI
VDD_SPI is the power supply to power SDO pin. It has to be connected to the same power supply (3.3 V or 5 V)
that MCU uses for its SPI operation.
During power up or down transient, VDD_SPI pin could be zero voltage shortly. During this period, no SDO
signal should be present at SDO pin from any other devices in the system because it causes a parasitic diode in
the DRV8301 conducting from SDO to VDD_SPI pin as a short. This should be considered and prevented from
system power sequence design.
20
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7.5 Programming
7.5.1 SPI Communication
7.5.1.1 SPI
The DRV8301 SPI operates as a slave. The SPI input (SDI) data format consists of a 16 bit word with 1
read/write bit, 4 address bits, and 11 data bits. The SPI output (SDO) data format consists of a 16 bit word with 1
frame fault bit, 4 address bits, and 11 data bits. When a frame is not valid, frame fault bit will set to 1 and the
remaining bits will shift out as 0.
A
•
•
•
valid frame must meet following conditions:
Clock must be low when nSCS goes low.
Should have 16 full clock cycles.
Clock must be low when nSCS goes high.
When nSCS is asserted high, any signals at the SCLK and SDI pins are ignored and SDO is forced into a high
impedance state. When nSCS transitions from HIGH to LOW, SDO is enabled and the SDO response word
loads into the shift register based on the previous SPI input word.
The SCLK pin must be low when nSCS transitions low. While nSCS is low, at each rising edge of the clock the
response word is serially shifted out on the SDO pin with the MSB shifted out first.
While SCS is low, at each falling edge of the clock the new input word is sampled on the SDI pin. The SPI input
word is decoded to determine the register address and access type (read or write). The MSB will be shifted in
first. Any amount of time may pass between bits, as long as nSCS stays active low. This allows two 8-bit words
to be used. If the input word sent to SDI is less than 16 bits or more than 16 bits, it is considered a frame error. If
it is a write command, the data will be ignored. The fault bit in the next SDO response word will then report 1.
After the 16th clock cycle or when nSCS transitions from LOW to HIGH, the SDI shift register data is transferred
into a latch where the input word is decoded.
For a READ command (Nth cycle) sent to SDI, SDO will respond with the data at the specified address in the
next cycle. (N+1)
For a WRITE command (Nth cycle) sent to SDI, SDO will respond with the data in Status Register 1 (0x00) in the
next cycle (N+1). This feature is intended to maximize SPI communication efficiency when having multiple write
commands.
7.5.1.2 SPI Format
The SDI input data word is 16 bits long and consists of:
• 1 read/write bit W [15]
• 4 address bits A [14:11]
• 11 data bits D [10:0]
The SDO output data word is 16 bits long and consists of:
• 1 fault frame bit F [15]
• 4 address bits A [14:11]
• 11 data bits D [10:0]
The SDO output word (Nth cycle) is in response to the previous SDI input word (N-1 cycle).
Therefore each SPI Query/Response pair requires two full 16 bit shift cycles to complete.
Table 6. SPI Input Data Control Word Format
R/W
ADDRESS
DATA
Word Bit
B15
B14
B13
B12
B11
B10
B9
B8
B7
B6
B5
B4
B3
B2
B1
B0
Command
W0
A3
A2
A1
A0
D10
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
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Table 7. SPI Output Data Response Word Format
R/W
DATA
Word Bit
B15
B14
B13
B12
B11
B10
B9
B8
B7
B6
B5
B4
B3
B2
B1
B0
Command
F0
A3
A2
A1
A0
D10
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
7.6 Register Maps
7.6.1 Read / Write Bit
The MSB bit of the SDI input word (W0) is a read/write bit. When W0 = 0, the input word is a write command.
When W0 = 1, input word is a read command.
7.6.2 Address Bits
Table 8. Register Address
REGISTER
TYPE
ADDRESS [A3..A0]
REGISTER NAME
DESCRIPTION
READ AND WRITE ACCESS
Status
Register
0
0
0
0
Status Register 1
Status register for device faults
R
0
0
0
1
Status Register 2
Status register for device faults and ID
R
Control
Register
0
0
1
0
Control Register 1
R/W
0
0
1
1
Control Register 2
R/W
7.6.3 SPI Data Bits
7.6.3.1 Status Registers
Table 9. Status Register 1 (Address: 0x00) (All Default Values are Zero)
ADDRESS
REGISTER
NAME
D10
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
0x00
Status
Register 1
FAULT
GVDD_UV
PVDD_UV
OTSD
OTW
FETHA_OC
FETLA_OC
FETHB_OC
FETLB_OC
FETHC_OC
FETLC_OC
Table 10. Status Register 2 (Address: 0x01) (All Default Values are Zero)
ADDRESS
REGISTER
NAME
D10
D9
D8
Status
Register 2
0x01
D7
D6
D5
D4
GVDD_OV
D3
D2
D1
D0
Device ID
[3]
Device ID
[2]
Device ID
[1]
Device ID
[0]
7.6.3.2 Control Registers
Table 11. Control Register 1 for Gate Driver Control (Address: 0x02) (1)
ADDRESS
NAME
D1
D0
Gate drive peak current 1.7 A
DESCRIPTION
D10
D9
D8
D7
D6
D5
D4
D3
D2
0 (1)
0 (1)
Gate drive peak current 0.7 A
0
1
Gate drive peak current 0.25 A
1
0
Reserved
1
1
GATE_CURRENT
0 (1)
Normal mode
GATE_RESET
Reset gate driver latched faults (reverts to 0)
0x02
1
0 (1)
6 PWM inputs (see Table 1)
PWM_MODE
3 PWM inputs (see Table 2)
1
0 (1)
0 (1)
OC latch shut down
0
1
Report only
1
0
OC disabled
1
1
Current limit
OCP_MODE
OC_ADJ_SET
(1)
22
See OC_ADJ_SET table
X
X
X
X
X
Default value
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Table 12. Control Register 2 for Current Shunt Amplifiers and Misc Control (Address: 0x03) (1)
ADDRESS
NAME
DESCRIPTION
D10
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
0 (1)
0 (1)
Report OT only
0
1
Report OC only
1
0
Report OC only (reserved)
1
1
Report both OT and OC at nOCTW pin
OCTW_MODE
Gain of shunt amplifier: 10 V/V
0 (1)
0 (1)
Gain of shunt amplifier: 20 V/V
0
1
Gain of shunt amplifier: 40 V/V
1
0
Gain of shunt amplifier: 80 V/V
1
1
GAIN
0x03
0 (1)
Shunt amplifier 1 connects to load through input pins
DC_CAL_CH1
Shunt amplifier 1 shorts input pins and disconnects from load
for external calibration
1
0 (1)
Shunt amplifier 2 connects to load through input pins
DC_CAL_CH2
Shunt amplifier 2 shorts input pins and disconnects from load
for external calibration
1
Cycle by cycle
0
(1)
OC_TOFF
Off-time control
1
Reserved
(1)
Default value
7.6.3.3 Overcurrent Adjustment
Table 13. OC_ADJ_SET Table
(1)
Control Bit (D6–D10) (0xH)
0
1
2
3
4
5
6
7
0.138
Vds (V)
0.060
0.068
0.076
0.086
0.097
0.109
0.123
Control Bit (D6–D10) (0xH)
8
9
10
11
12
13
14
15
Vds (V)
0.155
0.175
0.197
0.222
0.250
0.282
0.317
0.358
Control Bit (D6–D10) (0xH)
16
17
18
19
20
21
22
23
0.926
Vds (V)
0.403
0.454
0.511
0.576
0.648
0.730
0.822
Code Number (0xH)
24
25
26
27
28
29
30
31
Vds (V)
1.043
1.175
1.324
1.491
1.679 (1)
1.892 (1)
2.131 (1)
2.400 (1)
Do not use settings 28, 29, 30, 31 for VDS sensing if the IC is expected to operate in the 6-V to 8-V range.
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The DRV8301 is a gate driver designed to drive a 3-phase BLDC motor in combination with external power
MOSFETs. The device provides a high level of integration with three half-bridge gate drivers, two current shunt
amplifiers, and overcurrent protection.
8.1.1 Gate Driver Power-Up Sequencing Errata
The DRV8301 gate drivers may not correctly power up if a voltage greater than 8.5 V is present on any SH_X pin
when EN_GATE is brought logic high (device enabled) after PVDD1 power is applied (PVDD1 > PVDD_UV).
This sequence should be avoided by ensuring the voltage levels on the SH_X pins are less than 8.5 V when the
DRV8301 is enabled through EN_GATE.
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8.2 Typical Application
5
6
1Ω
7
8
9
SPI
10
11
12
2.2 µF
13
0.022 µF
14
15
16
17
18
19
PWM
20
21
22
1 µF
PVDDSENSE
23
24
ADC
25
56 Ω
27
28
PVDD2
nOCTW
BST_BK
nFAULT
PH
PH
DTC
VDD_SPI
nSCS
SDI
BST_A
SDO
GH_A
SCLK
SH_A
GL_A
DC_CAL
SL_A
GVDD
BST_B
CP1
CP2
GH_B
EN_GATE
SH_B
GL_B
INH_A
INL_A
SL_B
INH_B
BST_C
INL_B
GH_C
INH_C
SH_C
INL_C
GL_C
DVDD
SL_C
REF
SN1
SO1
SP1
SO2
SN2
AVDD
SP2
PPAD
AGND
PVDD1
52 0.1 µF
AGND
50
+
VCC
49
48 0.1 µF
47
GH_A
46
SH_A
45
GL_A
44
43 0.1 µF
42
GH_B
41
SH_B
40
GL_B
39
38 0.1 µF
37
GH_C
36
SH_C
35
GL_C
34
SL_C
33
SN1
32
SP1
31
SN2
30
0.1 µF
2.2 µF
SH_B
Diff. Pair
SP2
GND
0.1 µF
4.99 kΩ
AGND
10 mΩ
SN2
1000 pF
ASENSE
0.1 µF
SL_B
10 Ω
GL_B
BSENSE
10 Ω
GL_B
SL_B
0.1 µF
34.8 kΩ
34.8 kΩ
4.99 kΩ
10 mΩ
1000 pF
SP1
VCC
SH_B
SL_A
Diff. Pair
10 Ω
GH_B
VCC
CSENSE
2.2 µF
10 Ω
GH_B
SH_A
SN1
PGND
PVDD
VCC
10 Ω
PVDD
SP2
29
PVDD
GH_A
GL_A
SL_B
34.8 kΩ
PVDD
10 Ω
GND
SL_A
PVDDSENSE
4.99 kΩ
0.1 µF
3.3 Ω 0.01 µF
+
220 µF
+
220 µF
VCC
VCC
22 µH
51
57
PVDD
4.7 µF
53
2.2 µF
2200 pF
26
1 µF
2200 pF
CSENSE
PWRGD
55
X
54
34.8 kΩ
BSENSE
56 Ω
PVDD2
VSENSE
4.99 kΩ
ASENSE
EN_BUCK
47 µF
4
GPIO
SS_TR
RT_CLK
COMP
0.1 µF
3
PVDD
56
4.7 µF
2
POWER
GPIO
0.015 µF
205 kΩ
DRV8301
1
0.1 µF
10 kΩ
VCC
10 kΩ
10 kΩ
MCU
10 kΩ 31.6 kΩ
VCC
120 pF
6800 pF 16.2 kΩ
The following design is a common application of the DRV8301.
PGND
Figure 7. Typical Application Schematic
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Typical Application (continued)
8.2.1 Design Requirements
Table 14 shows the design parameters for this application.
Table 14. Design Parameters
DESIGN PARAMETER
REFERENCE
Supply voltage
VALUE
PVDD
24 V
Motor winding resistance
MR
0.5 Ω
Motor winding inductance
ML
0.28 mH
Motor poles
Motor rated RPM
Target full-scale current
Sense resistor
MOSFET Qg
16 poles
4000 RPM
IMAX
14 A
RSENSE
0.01 Ω
Qg
29 nC
RDS(on)
4.7 mΩ
OC_ADJ_SET
0.123 V
ƒSW
45 kHz
MOSFET RDS(on)
VDS trip level
MP
MRPM
Switching frequency
RGATE
10 Ω
Amplifier reference
VREF
3.3 V
Amplifier gain
Gain
10 V/V
Series gate resistance
8.2.2 Detailed Design Procedure
8.2.2.1 Gate Drive Average Current Load
The gate drive supply (GVDD) of the DRV8301 can deliver up to 30 mA (RMS) of current to the external power
MOSFETs. Use Equation 3 to determine the approximate RMS load on the gate drive supply:
Gate Drive RMS Current = MOSFET Qg × Number of Switching MOSFETs × Switching Frequency
(3)
Example:
7.83 mA = 29 nC × 6 × 45 kHz
(4)
This is a rough approximation only.
8.2.2.2 Overcurrent Protection Setup
The DRV8301 provides overcurrent protection for the external power MOSFETs through the use of VDS monitors
for both the high side and low side MOSFETs. These are intended for protecting the MOSFET in overcurrent
conditions and not for precise current regulation.
The overcurrent protection works by monitoring the VDS voltage of the external MOSFET and comparing it
against the OC_ADJ_SET register value. If the VDS exceeds the OC_ADJ_SET value the DRV8301 takes action
according to the OC_MODE register.
Overcurrent Trip = OC_ADJ_SET / MOSFET RDS(on)
(5)
Example:
26.17 A = 0.123 V/ 4.7 mΩ
(6)
MOSFET RDS(on) changes with temperature and this will affect the overcurrent trip level.
8.2.2.3 Sense Amplifier Setup
The DRV8301 provides two bidirectional low-side current shunt amplifiers. These can be used to sense a sum of
the three half-bridges, two of the half-bridges individually, or in conjunction with an additional shunt amplifier to
sense all three half-bridges individually.
1. Determine the peak current that the motor will demand (IMAX). This will be dependent on the motor
parameters and your specific application. I(MAX) in this example is 14 A.
2. Determine the available voltage range for the current shunt amplifier. This will be ± half of the amplifier
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reference voltage (VREF). In this case the available range is ±1.65 V.
3. Determine the sense resistor value and amplifier gain settings. There are common tradeoffs for both the
sense resistor value and amplifier gain. The larger the sense resistor value, the better the resolution of the
half-bridge current. This comes at the cost of additional power dissipated from the sense resistor. A larger
gain value will allow you to decrease the sense resistor, but at the cost of increased noise in the output
signal. This example uses a 0.01 Ω sense resistor and the minimum gain setting of the DRV8301 (10 V/V).
These values allow the current shunt amplifiers to measure ±16.5 A (some additional margin on the 14 A
requirement).
8.2.3 Application Curves
Figure 8. Motor Spinning 2000 RPM
Figure 9. Motor Spinning 4000 RPM
Figure 10. Gate Drive 20% Duty Cycle
Figure 11. Gate Drive 80% Duty Cycle
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9 Power Supply Recommendations
9.1 Bulk Capacitance
Having appropriate local bulk capacitance is an important factor in motor drive system design. It is generally
beneficial to have more bulk capacitance, while the disadvantages are increased cost and physical size.
The amount of local capacitance needed depends on a variety of factors, including:
• The highest current required by the motor system
• The capacitance of the power supply and its ability to source or sink current
• The amount of parasitic inductance between the power supply and motor system
• The acceptable voltage ripple
• The type of motor used (brushed DC, brushless DC, stepper)
• The motor braking method
The inductance between the power supply and motor drive system will limit the rate current can change from the
power supply. If the local bulk capacitance is too small, the system will respond to excessive current demands or
dumps from the motor with a change in voltage. When adequate bulk capacitance is used, the motor voltage
remains stable and high current can be quickly supplied.
The data sheet generally provides a recommended value, but system-level testing is required to determine the
appropriate sized bulk capacitor.
Power Supply
Parasitic Wire
Inductance
Motor Drive System
VM
+
–
+
Motor
Driver
GND
Local
Bulk Capacitor
IC Bypass
Capacitor
Figure 12. Example Setup of Motor Drive System With External Power Supply
The voltage rating for bulk capacitors should be higher than the operating voltage, to provide margin for cases
when the motor transfers energy to the supply.
28
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10 Layout
10.1 Layout Guidelines
Use these layout recommendations when designing a PCB for the DRV8301.
• The DRV8301 makes an electrical connection to GND through the PowerPAD. Always check to ensure that
the PowerPAD has been properly soldered (See PowerPAD™ Thermally Enhanced Package application
report, SLMA002).
• PVDD bypass capacitors should be placed close to their corresponding pins with a low impedance path to
device GND (PowerPAD).
• GVDD bypass capacitor should be placed close its corresponding pin with a low impedance path to device
GND (PowerPAD).
• AVDD and DVDD bypass capacitors should be placed close to their corresponding pins with a low-impedance
path to the AGND pin. It is preferable to make this connection on the same layer.
• AGND should be tied to device GND (PowerPAD) through a low impedance trace/copper fill.
• Add stitching vias to reduce the impedance of the GND path from the top to bottom side.
• Try to clear the space around and underneath the DRV8301 to allow for better heat spreading from the
PowerPAD.
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10.2 Layout Example
Figure 13. Top and Bottom Layer Layout Schematic
30
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation see the following:
• Semiconductor and IC Package Thermal Metrics application report, SPRA953
• PowerPAD™ Thermally Enhanced Package application report, SLMA002
11.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.3 Trademarks
PowerPAD, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
11.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
DRV8301DCA
ACTIVE
HTSSOP
DCA
56
35
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 125
DRV8301
DRV8301DCAR
ACTIVE
HTSSOP
DCA
56
2000
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 125
DRV8301
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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