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DRV8802
SLVSAM9D – APRIL 2011 – REVISED DECEMBER 2015
DRV8802 DC Motor Driver IC
1 Features
3 Description
•
•
The DRV8802 provides an integrated motor driver
solution for printers, scanners, and other automated
equipment applications. The device has two H-bridge
drivers, and is intended to drive DC motors. The
output driver block for each consists of N-channel
power MOSFET’s configured as H-bridges to drive
the motor windings. The DRV8802 can supply up to
1.6-A peak or 1.1-A RMS output current (with proper
heatsinking at 24 V and 25°C) per H-bridge.
1
•
•
•
•
•
•
•
8.2-V to 45-V Operating Supply Voltage Range
Dual H-Bridge Current-Control Motor Driver
– Drive Two DC Motors
– Brake Mode
– Four Level Winding Current Control
1.6-A Maximum Drive Current at 24 V and TA
25°C
Industry Standard Parallel Digital Control Interface
Low Current Sleep Mode
Built-In 3.3-V Reference Output
Small Package Footprint
Protection Features
– Overcurrent Protection (OCP)
– Thermal Shutdown (TSD)
– VM Undervoltage Lockout (UVLO)
– Fault Condition Indication Pin (nFAULT)
Thermally Enhanced Surface Mount Package
A simple parallel digital control interface is compatible
with industry-standard devices. Decay mode is
programmable to allow braking or coasting of the
motor when disabled.
Internal shutdown functions are provided for over
current protection, short circuit protection, under
voltage lockout and overtemperature.
The DRV8802 is available in a 28-pin HTSSOP
package with PowerPAD™ (Eco-friendly: RoHS & no
Sb/Br).
Device Information(1)
2 Applications
•
•
•
•
•
•
PART NUMBER
DRV8802
Printers
Scanners
Office Automation Machines
Gaming Machines
Factory Automation
Robotics
PACKAGE
HTSSOP (28)
BODY SIZE (NOM)
9.70 mm × 4.40 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
8.2 V to 45 V
PHASE
DRV8802
+
M
1.6 A
±
Controller
ENBL
Decay Mode
Current Lvl
Stepper Motor
Driver
+
±
nFAULT
1.6 A
Current
Control
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
DRV8802
SLVSAM9D – APRIL 2011 – REVISED DECEMBER 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
5
5
6
7
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description .............................................. 8
7.1
7.2
7.3
7.4
Overview ................................................................... 8
Functional Block Diagram ......................................... 9
Feature Description................................................. 10
Device Functional Modes........................................ 11
8
Application and Implementation ........................ 14
8.1 Application Information............................................ 14
8.2 Typical Application ................................................. 14
9
Power Supply Recommendations...................... 17
9.1 Bulk Capacitance .................................................... 17
9.2 Power Supply and Logic Sequencing ..................... 17
10 Layout................................................................... 18
10.1 Layout Guidelines ................................................. 18
10.2 Layout Example .................................................... 18
10.3 Thermal Considerations ........................................ 18
11 Device and Documentation Support ................. 20
11.1
11.2
11.3
11.4
11.5
Documentation Support ........................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
20
20
20
20
20
12 Mechanical, Packaging, and Orderable
Information ........................................................... 20
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision C (August 2013) to Revision D
•
2
Page
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section .................................................................................................. 1
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5 Pin Configuration and Functions
PWP Package
28-Pin Package
Top View
CP1
CP2
VCP
VMA
AOUT1
ISENA
AOUT2
BOUT2
ISENB
BOUT1
VMB
AVREF
BVREF
GND
1
28
2
3
27
26
4
25
5
24
6
23
GND
(PPAD)
7
8
22
21
9
20
10
19
11
18
12
17
13
16
14
15
GND
BI1
BI0
AI1
AI0
BPHASE
BENBL
AENBL
APHASE
DECAY
nFAULT
nSLEEP
nRESET
V3P3OUT
Pin Functions
PIN
NAME
PIN
I/O (1)
EXTERNAL COMPONENTS
OR CONNECTIONS
DESCRIPTION
POWER AND GROUND
CP1
1
IO
Charge pump flying capacitor
CP2
2
IO
Charge pump flying capacitor
GND
14, 28
—
Device ground
VCP
3
IO
High-side gate drive voltage
VMA
4
—
Bridge A power supply
VMB
11
—
Bridge B power supply
V3P3OUT
15
O
3.3-V regulator output
Bypass to GND with a 0.47-μF, 6.3-V ceramic
capacitor. Can be used to supply VREF.
AENBL
21
I
Bridge A enable
Logic high to enable bridge A
AI0
24
I
AI1
25
I
Bridge A current set
Sets bridge A current: 00 = 100%,
01 = 71%, 10 = 38%, 11 = 0
APHASE
20
I
Bridge A phase (direction)
Logic high sets AOUT1 high, AOUT2 low
AVREF
12
I
Bridge A current set reference input
Reference voltage for winding current set.
Can be driven individually with an external
DAC for microstepping, or tied to a reference
(for example, V3P3OUT).
BENBL
22
I
Bridge B enable
Logic high to enable bridge B
BI0
26
I
BI1
27
I
Bridge B current set
Sets bridge B current: 00 = 100%,
01 = 71%, 10 = 38%, 11 = 0
BPHASE
23
I
Bridge B phase (direction)
Logic high sets BOUT1 high, BOUT2 low
BVREF
13
I
Bridge B current set reference input
Reference voltage for winding current set.
Can be driven individually with an external
DAC for microstepping, or tied to a reference
(for example, V3P3OUT).
DECAY
19
I
Decay (brake) mode
Low = brake (slow decay),
high = coast (fast decay)
nRESET
16
I
Reset input
Active-low reset input initializes internal logic
and disables the H-bridge outputs
Connect a 0.01-μF 50-V capacitor between
CP1 and CP2.
Connect a 0.1-μF 16-V ceramic capacitor and
a 1-MΩ resistor to VM.
Connect to motor supply (8.2 V to 45 V). Both
pins must be connected to the same supply,
bypassed with a 0.1-µF capacitor to GND,
and connected to appropriate bulk
capacitance.
CONTROL
(1)
Directions: I = input, O = output, OZ = tri-state output, OD = open-drain output, IO = input/output
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Pin Functions (continued)
PIN
I/O (1)
EXTERNAL COMPONENTS
OR CONNECTIONS
DESCRIPTION
NAME
PIN
nSLEEP
17
I
18
OD
AOUT1
5
O
Bridge A output 1
AOUT2
7
O
Bridge A output 2
BOUT1
10
O
Bridge B output 1
BOUT2
8
O
Bridge B output 2
ISENA
6
IO
Bridge A ground / Isense
Connect to current sense resistor for bridge A
ISENB
9
IO
Bridge B ground / Isense
Connect to current sense resistor for bridge B
Sleep mode input
Logic high to enable device, logic low to enter
low-power sleep mode
Fault
Logic low when in fault condition (overtemp,
overcurrent)
STATUS
nFAULT
OUTPUT
Connect to motor winding A
Connect to motor winding B
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
–0.3
47
V
0
1
V/µs
Digital pin voltage
–0.5
7
V
Input voltage
–0.3
4
V
ISENSEx pin voltage (3)
–0.8
0.8
V
VMx
Power supply voltage
VMx
Power supply ramp rate
VREF
(1) (2)
Peak motor drive output current, t < 1 μS
Continuous motor drive output current
Internally limited
(4)
0
A
1.6
Continuous total power dissipation
See Thermal Information.
TJ
Operating virtual junction temperature
–40
TA
Operating ambient temperature
Tstg
Storage temperature
(1)
(2)
(3)
(4)
UNIT
A
150
°C
–40
85
°C
–60
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to network ground terminal.
Transients of ±1 V for less than 25 ns are acceptable
Power dissipation and thermal limits must be observed.
6.2 ESD Ratings
VAUE
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins
V(ESD)
(1)
(2)
4
Electrostatic discharge
(1)
Charged device model (CDM), per JEDEC specification JESD22-C101,
all pins (2)
UNIT
±2000
±500
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
VM
Motor power supply voltage range
VREF
VREF input voltage (2)
IV3P3
V3P3OUT load current
(1)
(2)
(1)
NOM
MAX
8.2
45
1
3.5
1
UNIT
V
V
mA
All VM pins must be connected to the same supply voltage.
Operational at VREF between 0 V and 1 V, but accuracy is degraded.
6.4 Thermal Information
DRV8802
THERMAL METRIC (1)
PWP (HTSSOP)
UNIT
28 PINS
RθJA
Junction-to-ambient thermal resistance
38.9
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
23.3
°C/W
RθJB
Junction-to-board thermal resistance
21.2
°C/W
ψJT
Junction-to-top characterization parameter
0.8
°C/W
ψJB
Junction-to-board characterization parameter
20.9
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
2.6
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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6.5 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
POWER SUPPLIES
IVM
VM operating supply current
VM = 24 V, fPWM < 50 kHz
5
8
mA
IVMQ
VM sleep mode supply current
VM = 24 V
10
20
μA
VUVLO
VM undervoltage lockout voltage
VM rising
7.8
8.2
V
3.18
3.3
3.42
3.1
3.3
3.5
V3P3OUT REGULATOR
V3P3
V3P3OUT voltage
IOUT = 0 to 1 mA, VM = 24 V, TJ = 25°C
IOUT = 0 to 1 mA
V
LOGIC-LEVEL INPUTS
VIL
Input low voltage
VIH
Input high voltage
0.6
0.7
V
5.25
V
VHYS
Input hysteresis
IIL
Input low current
VIN = 0
20
μA
IIH
Input high current
VIN = 3.3 V
100
μA
0.5
V
1
μA
0.8
V
±40
µA
2
0.45
–20
V
nFAULT OUTPUT (OPEN-DRAIN OUTPUT)
VOL
Output low voltage
IO = 5 mA
IOH
Output high leakage current
VO = 3.3 V
DECAY INPUT
VIL
Input low threshold voltage
For slow decay mode
0
VIH
Input high threshold voltage
For fast decay mode
2
IIN
Input current
V
H-BRIDGE FETS
RDS(ON)
HS FET on resistance
RDS(ON)
LS FET on resistance
IOFF
Off-state leakage current
VM = 24 V, I O = 1 A, TJ = 25°C
0.63
VM = 24 V, IO = 1 A, TJ = 85°C
0.76
VM = 24 V, IO = 1 A, TJ = 25°C
0.65
VM = 24 V, IO = 1 A, TJ = 85°C
0.78
–20
0.9
0.9
20
Ω
Ω
μA
MOTOR DRIVER
fPWM
Internal PWM frequency
tBLANK
Current sense blanking time
50
tR
Rise time
VM = 24 V
100
tF
Fall time
VM = 24 V
80
tDEAD
Dead time
tDEG
Input deglitch time
kHz
μs
3.75
360
ns
250
ns
2.9
µs
400
1.3
ns
PROTECTION CIRCUITS
IOCP
Overcurrent protection trip level
tTSD
Thermal shutdown temperature
1.8
Die temperature
150
5
A
160
180
°C
3
μA
CURRENT CONTROL
IREF
xVREF input current
VTRIP
xISENSE trip voltage
AISENSE
Current sense amplifier gain
6
xVREF = 3.3 V
–3
xVREF = 3.3 V, 100% current setting
635
660
685
xVREF = 3.3 V, 71% current setting
445
469
492
xVREF = 3.3 V, 38% current setting
225
251
276
Reference only
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5
mV
V/V
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6.6 Typical Characteristics
14
7.0
13
6.5
12
IVMQ ( A)
IVM (mA)
6.0
5.5
5.0
11
10
9
-40°C
8
25°C
4.5
85°C
125°C
4.0
10
15
20
25
30
35
40
V(VMx) (V)
25°C
85°C
7
125°C
6
45
10
15
-40°C
85°C
30
35
40
45
C002
Figure 2. IVMxQ vs V(VMx)
2000
25°C
125°C
10 V
24 V
1800
RDS(ON) HS + LS (mŸ)
1800
RDS(ON) HS + LS (mŸ)
25
V(VMx) (V)
Figure 1. IVMx vs V(VMx)
2000
20
C001
1600
1400
1200
45 V
1600
1400
1200
1000
1000
800
800
10
15
20
25
30
35
V(VMx) (V)
40
45
±50
C003
±25
0
25
50
75
100
TA (ƒC)
125
C004
Figure 4. RDS(ON) vs Temperature
Figure 3. RDS(ON) vs V(VMx)
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7 Detailed Description
7.1 Overview
The DRV8802 is an integrated motor driver solution for two brushed DC motors. The device integrates two
NMOS H-bridges, current sense, regulation circuitry, and detailed fault detection. The DRV8802 can be powered
with a supply voltage from 8.2 V to 45 V and is capable of providing an output current up to 1.6-A full-scale.
A PHASE/ENBL interface allows for simple interfacing to the controller circuit. The winding current control allows
the external controller to adjust the regulated current that is provided to the motor. The current regulation is
highly configurable, with two decay modes of operation. Fast and slow decay can be selected depending on the
application requirements.
A low-power sleep mode is included which allows the system to save power when not driving the motor.
8
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7.2 Functional Block Diagram
VM
VM
Internal
Reference &
Regs
3.3V
CP1
Int. VCC
LS Gate
Drive
V3P3OUT
0.01mF
CP2
VM
Charge
Pump
VCP
3.3V
0.1mF
Thermal
Shut down
HS Gate
Drive
1MW
VM
AVREF
VMA
BVREF
AOUT1
Motor
Driver A
APHASE
AENBL
DCM
AOUT2
AI0
ISENA
AI1
BPHASE
BENBL
BI0
Control
Logic
VM
VMB
BI1
BOUT1
DECAY
Motor
Driver B
nRESET
DCM
BOUT2
nSLEEP
ISENB
nFAULT
GND
GND
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7.3 Feature Description
7.3.1 PWM Motor Drivers
The DRV8802 contains two H-bridge motor drivers with current-control PWM circuitry. Figure 5 shows a block
diagram of the motor control circuitry.
VM
OCP
VM
VCP, VGD
AOUT1
Predrive
AENBL
DCM
APHASE
AOUT2
DECAY
PWM
OCP
AISEN
+
AI[1:0]
A=5
DAC
2
AVREF
VM
OCP
VM
VCP, VGD
BOUT1
Predrive
BENBL
DCM
BPHASE
BOUT2
PWM
OCP
BISEN
+
BI[1:0]
A =5
DAC
2
BVREF
Figure 5. Motor Control Circuitry
Note that there are multiple VM pins. All VM pins must be connected together to the motor supply voltage.
7.3.2 Protection Circuits
The DRV8802 is fully protected against undervoltage, overcurrent, and overtemperature events.
10
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Feature Description (continued)
7.3.2.1 Overcurrent Protection (OCP)
An analog current limit circuit on each FET limits the current through the FET by removing the gate drive. If this
analog current limit persists for longer than the OCP time, all FETs in the H-bridge are disabled and the nFAULT
pin are driven low. The device remains disabled until either nRESET pin is applied, or VM is removed and reapplied.
Overcurrent conditions on both high and low side devices; that is, a short-to-ground, supply, or across the motor
winding results in an overcurrent shutdown. Note that overcurrent protection does not use the current sense
circuitry used for PWM current control, and is independent of the ISENSE resistor value or VREF voltage.
7.3.2.2 Thermal Shutdown (TSD)
If the die temperature exceeds safe limits, all FETs in the H-bridge are disabled and the nFAULT pin are driven
low. Once the die temperature has fallen to a safe level operation automatically resumes.
7.3.2.3 Undervoltage Lockout (UVLO)
If at any time the voltage on the VM pins falls below the undervoltage lockout threshold voltage, all circuitry in the
device is disabled and internal logic resets. Operation resumes when VM rises above the UVLO threshold.
7.4 Device Functional Modes
7.4.1 Bridge Control
The xPHASE input pins control the direction of current flow through each H-bridge, and hence the direction of
rotation of a DC motor. The xENBL input pins enable the H-bridge outputs when active high, and can also be
used for PWM speed control of the motor. Table 1 shows the logic.
Table 1. H-Bridge Logic
xENBL
(1)
xPHASE
xOUT1
(1)
xOUT2
0
X
see
see
1
1
H
L
1
0
L
H
(1)
Depends on state of the DECAY pin. See Decay Mode and Braking.
7.4.2 Current Regulation
The current through the motor windings is regulated by a fixed-frequency PWM current regulation, or current
chopping. When an H-bridge is enabled, current rises through the winding at a rate dependent on the DC voltage
and inductance of the winding. Once the current hits the current chopping threshold, the bridge disables the
current until the beginning of the next PWM cycle.
For stepping motors, current regulation is normally used at all times, and can changing the current can be used
to microstep the motor. For DC motors, current regulation is used to limit the start-up and stall current of the
motor.
The PWM chopping current is set by a comparator which compares the voltage across a current sense resistor
connected to the xISEN pins, multiplied by a factor of 5, with a reference voltage. The reference voltage is input
from the xVREF pins, and is scaled by a 2-bit DAC that allows current settings of 100%, 71%, 38% of full-scale,
plus zero.
The full-scale (100%) chopping current is calculated in Equation 1.
VREFX
ICHOP
5 u RISENSE
(1)
Example:
If a 0.5-Ω sense resistor is used and the VREFx pin is 3.3 V, the full-scale (100%) chopping current is 3.3 V /
(5 × 0.5 Ω) = 1.32 A.
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Two input pins per H-bridge (xI1 and xI0) are used to scale the current in each bridge as a percentage of the fullscale current set by the VREF input pin and sense resistance. The function of the pins is shown in Table 2.
Table 2. H-Bridge Pin Functions
xI1
xI0
RELATIVE CURRENT
(% FULL-SCALE CHOPPING CURRENT)
1
1
0% (Bridge disabled)
1
0
38%
0
1
71%
0
0
100%
Note that when both xI bits are 1, the H-bridge is disabled and no current flows.
Example:
If a 0.5-Ω sense resistor is used and the VREF pin is 3.3 V, the chopping current is 1.32 A at the 100%
setting (xI1, xI0 = 00). At the 71% setting (xI1, xI0 = 01) the current is 1.32 A × 0.71 = 0.937 A, and at the
38% setting (xI1, xI0 = 10) the current is 1.32 A × 0.38 = 0.502 A. If (xI1, xI0 = 11) the bridge is disabled and
no current flows.
7.4.3 Decay Mode and Braking
During PWM current chopping, the H-bridge is enabled to drive current through the motor winding until the PWM
current chopping threshold is reached. This is shown in Figure 6 as case 1. The current flow direction shown
indicates the state when the xENBL pin is high.
Once the chopping current threshold is reached, the H-bridge can operate in two different states, fast decay or
slow decay.
In fast decay mode, once the PWM chopping current level has been reached, the H-bridge reverses state to
allow winding current to flow in a reverse direction. As the winding current approaches zero, the bridge is
disabled to prevent any reverse current flow. Fast decay mode is shown in Figure 6 as case 2.
In slow decay mode, winding current is re-circulated by enabling both of the low-side FETs in the bridge. This is
shown in Figure 6 as case 3.
12
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Figure 6. Decay Mode
The DRV8802 supports fast decay and slow decay mode. Slow or fast decay mode is selected by the state of
the DECAY pin - logic low selects slow decay, and logic high sets fast decay mode. Note that the DECAY pin
sets the decay mode for both H-bridges.
DECAY mode also affects the operation of the bridge when it is disabled (by taking the ENBL pin inactive). This
applies if the ENABLE input is being used for PWM speed control of the motor, or if it is simply being used to
start and stop motor rotation.
If the DECAY pin is high (fast decay), when the bridge is disabled, all FETs are turned off and decay current
flows through the body diodes. This allows the motor to coast to a stop.
If the DECAY pin is low (slow decay), both low-side FETs is turned on when ENBL is made inactive. This
essentially shorts out the back EMF of the motor, causing the motor to brake, and stop quickly. The low-side
FETs stays in the ON state even after the current reaches zero.
7.4.4 Blanking Time
After the current is enabled in an H-bridge, the voltage on the xISEN pin is ignored for a fixed period of time
before enabling the current sense circuitry. This blanking time is fixed at 3.75 μs. Note that the blanking time also
sets the minimum on time of the PWM.
7.4.5 nRESET and nSLEEP Operation
The nRESET pin, when driven active low, resets the internal logic. It also disables the H-bridge drivers. All inputs
are ignored while nRESET is active.
Driving nSLEEP low puts the device into a low-power sleep state. In this state, the H-bridges are disabled, the
gate drive charge pump is stopped, the V3P3OUT regulator is disabled, and all internal clocks are stopped. In
this state all inputs are ignored until nSLEEP returns inactive high. When returning from sleep mode, some time
(approximately 1 ms) needs to pass before the motor driver becomes fully operational.
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers must
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The DRV8802 can be used to control two brushed DC motors. The PHASE/ENBL interface controls the outputs
and current control can be implemented with the internal current regulation circuitry. Detailed fault reporting is
provided with the internal protection circuits and nFAULT pin.
8.2 Typical Application
CP1
DRV8802
GND
0.01 µF
1 MŸ
VCP
BI0
VMA
AI1
AOUT1
AI0
400 mŸ
Brushed DC
Motor
BPHASE
ISENA
-
VM
BI1
0.1 µF
+
0.01 µF
CP2
+
AOUT2
BENBL
BOUT2
AENBL
+
100 µF
400 mŸ
Brushed DC
Motor
ISENB
APHASE
-
V3P3OUT
BOUT1
DECAY
10 kŸ
0.01 µF
VMB
nFAULT
AVREF
nSLEEP
BVREF
nRESET
V3P3OUT
30 kŸ
GND
PPAD
10 kŸ
V3P3OUT
V3P3OUT
0.47 µF
Figure 7. Typical Application Schematic
14
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Typical Application (continued)
8.2.1 Design Requirements
Table 3 lists the parameters for this design example.
Table 3. Design Parameters
DESIGN PARAMETER
REFERENCE
EXAMPLE VALUE
Supply voltage
VM
24 V
Motor winding resistance
RL
3.9 Ω
Motor winding inductance
IL
2.9 mH
Sense resistor value
RSENSE
400 mΩ
Target full-scale current
IFS
1.25 A
8.2.2 Detailed Design Procedure
8.2.2.1 Current Regulation
In a stepper motor, the set full-scale current (IFS) is the maximum current driven through either winding. This
quantity depends on the xVREF analog voltage and the sense resistor value (RSENSE). During stepping, IFS
defines the current chopping threshold (ITRIP) for the maximum current step. The gain of DRV8802 is set for
5 V/V.
xVREF(V)
xVREF(V)
IFS (A)
A v u RSENSE (:) 5 u RSENSE (:)
(2)
To achieve IFS = 1.25 A with RSENSE of 0.2 Ω, xVREF must be 1.25 V.
8.2.2.2 Decay Modes
The DRV8802 supports two different decay modes: slow decay and fast decay. The current through the motor
windings is regulated using a fixed-frequency PWM scheme. This means that after any drive phase, when a
motor winding current has hit the current chopping threshold (ITRIP), the DRV8802 places the winding in one of
the two decay modes until the PWM cycle has expired. Afterward, a new drive phase starts. The blanking time,
tBLANK, defines the minimum drive time for the current chopping. ITRIP is ignored during tBLANK, so the
winding current may overshoot the trip level.
8.2.2.3 Sense Resistor
For optimal performance, it is important for the sense resistor to be:
• Surface-mount
• Low inductance
• Rated for high enough power
• Placed closely to the motor driver
The power dissipated by the sense resistor equals Irms2 × R. For example, if the rms motor current is 2-A and a
100-mΩ sense resistor is used, the resistor dissipates 2 A² × 0.1 Ω = 0.4 W. The power quickly increases with
greater current levels.
Resistors typically have a rated power within some ambient temperature range, along with a de-rated power
curve for high ambient temperatures. When a PCB is shared with other components generating heat, margin
must be added. It is always best to measure the actual sense resistor temperature in a final system, along with
the power MOSFETs, as those are often the hottest components.
Because power resistors are larger and more expensive than standard resistors, it is common practice to use
multiple standard resistors in parallel, between the sense node and ground. This distributes the current and heat
dissipation.
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8.2.3 Application Curves
Figure 8. DRV8802 Current Limiting
16
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Figure 9. DRV8802 Direction Change
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9 Power Supply Recommendations
The DRV8802 is designed to operate from an input voltage supply (VMx) range between 8.2 V and 45 V. Two
0.1-µF ceramic capacitors rated for VMx must be placed as close as possible to the VMA and VMB pins
respectively (one on each pin). In addition to the local decoupling capacitors, additional bulk capacitors is
required and must be sized accordingly to the application requirements.
9.1 Bulk Capacitance
Bulk capacitance sizing is an important factor in motor drive system design. It is dependent on a variety of factors
including:
• Type of power supply
• Acceptable supply voltage ripple
• Parasitic inductance in the power supply wiring
• Type of motor (brushed DC, brushless DC, stepper)
• Motor startup current
• Motor braking method
The inductance between the power supply and motor drive system limits the rate current can change from the
power supply. If the local bulk capacitance is too small, the system responds to excessive current demands or
dumps from the motor with a change in voltage. You must size the bulk capacitance to meet acceptable voltage
ripple levels.
The data sheet generally provides a recommended value but system level testing is required to determine the
appropriate sized bulk capacitor.
Parasitic Wire
Inductance
Motor Drive System
Power Supply
VM
+
–
Motor
Motor
Driver
Driver
+
GND
Local
Bulk Capacitor
IC Bypass
Capacitor
Figure 10. Setup of Motor Drive System With External Power Supply
9.2 Power Supply and Logic Sequencing
There is no specific sequence for powering-up the DRV8802. It is okay for digital input signals to be present
before VMx is applied. After VMx is applied to the DRV8802, it begins operation based on the status of the
control pins.
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10 Layout
10.1 Layout Guidelines
The VMA and VMB pins must be bypassed to GND using low-ESR ceramic bypass capacitors with a
recommended value of 0.1-μF rated for VMx. This capacitor must be placed as close to the VMA and VMB pins
as possible with a thick trace or ground plane connection to the device GND pin.
The VMA and VMB pins must be bypassed to ground using an appropriate bulk capacitor. This component may
be an electrolytic and must be located close to the DRV8802.
A low-ESR ceramic capacitor must be placed in between the VMA and VCP pins. TI recommends a value of 0.1μF rated for 16 V. Place this component as close to the pins as possible. Also, place a 1-MΩ resistor between
VCP and VMA.
Bypass V3P3 to ground with a ceramic capacitor rated 6.3 V. Place this bypass capacitor as close to the pin as
possible
10.2 Layout Example
0.1 µF
CP1
GND
CP2
BI1
0.01 µF
1 0Ÿ
VCP
BI0
VMA
AI1
AOUT1
AI0
ISENA
BPHASE
AOUT2
BENBL
0.1 µF
RISENA
RISENB
BOUT2
AENBL
ISENB
APHASE
BOUT1
DECAY
VMB
nFAULT
AVREF
nSLEEP
+
0.1 µF
BVREF
nRESET
GND
V3P3OUT
0.47 µF
Figure 11. Typical Layout of DRV8802
10.3 Thermal Considerations
The DRV8802 has thermal shutdown (TSD) as described in Thermal Shutdown (TSD). If the die temperature
exceeds approximately 150°C, the device is disabled until the temperature drops to a safe level.
Any tendency of the device to enter TSD is an indication of either excessive power dissipation, insufficient
heatsinking, or too high an ambient temperature.
10.3.1 Power Dissipation
Power dissipation in the DRV8802 is dominated by the power dissipated in the output FET resistance, or
RDS(ON). Average power dissipation of each H-bridge when running a DC motor can be roughly estimated by
Equation 3.
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Thermal Considerations (continued)
P
2 u RDS(ON) u IOUT
2
where
•
•
•
•
P is the power dissipation of one H-bridge
RDS(ON) is the resistance of each FET
IOUT is the RMS output current being applied to each winding
IOUT is equal to the average current drawn by the DC motor.
(3)
Note that at start-up and fault conditions this current is much higher than normal running current; these peak
currents and their duration also must be taken into consideration. The factor of 2 comes from the fact that at any
instant two FETs are conducting winding current (one high-side and one low-side).
The total device dissipation is the power dissipated in each of the two H-bridges added together.
The maximum amount of power that can be dissipated in the device is dependent on ambient temperature and
heatsinking.
NOTE
RDS(ON) increases with temperature, so as the device heats, the power dissipation
increases. This must be taken into consideration when sizing the heatsink.
10.3.2 Heatsinking
The PowerPAD™ package uses an exposed pad to remove heat from the device. For proper operation, this pad
must be thermally connected to copper on the PCB to dissipate heat. On a multi-layer PCB with a ground plane,
this can be accomplished by adding a number of vias to connect the thermal pad to the ground plane. On PCBs
without internal planes, copper area can be added on either side of the PCB to dissipate heat. If the copper area
is on the opposite side of the PCB from the device, thermal vias are used to transfer the heat between top and
bottom layers.
For details about how to design the PCB, refer to TI application report, PowerPAD™ Thermally Enhanced
Package (SLMA002), and TI application brief, PowerPAD™ Made Easy (SLMA004), available at www.ti.com.
In general, the more copper area that can be provided, the more power can be dissipated.
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For more information see the following documents:
• PowerPAD™ Thermally Enhanced Package, SLMA002
• PowerPAD™ Made Easy, SLMA004
11.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.3 Trademarks
PowerPAD, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
11.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
20
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
DRV8802PWP
ACTIVE
HTSSOP
PWP
28
50
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
DRV8802
DRV8802PWPR
ACTIVE
HTSSOP
PWP
28
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
DRV8802
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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