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DRV8813
SLVSA72E – APRIL 2010 – REVISED OCTOBER 2015
DRV8813 Dual-Bridge Motor Controller IC
1 Features
3 Description
•
•
The DRV8813 provides an integrated motor driver
solution for printers, scanners, and other automated
equipment applications. The device has two H-bridge
drivers, and can drive a bipolar stepper motor or two
DC motors. The output driver block for each consists
of N-channel power MOSFETs configured as full Hbridges to drive the motor windings. The DRV8813
can supply up to 2.5-A peak or 1.75-A RMS output
current (with proper heatsinking at 24 V and 25°C).
1
•
•
•
•
•
•
•
8.2-V to 45-V Operating Supply Voltage Range
2.5-A Maximum Drive Current at 24 V and
TA = 25°C
Dual H-Bridge Current Control Motor Driver
– Drive a Bipolar Stepper or Two DC Motors
– Four Level Winding Current Control
Multiple Decay Modes
– Mixed Decay
– Slow Decay
– Fast Decay
Industry Standard Parallel Digital Control Interface
Low Current Sleep Mode
Built In 3.3-V Reference Output
Small Package and Footprint
Protection Features
– Overcurrent Protection (OCP)
– Thermal Shutdown (TSD)
– VM Undervoltage Lockout (UVLO)
– Fault Condition Indication Pin (nFAULT)
Internal shutdown functions are provided for
overcurrent protection, short circuit protection,
undervoltage lockout and overtemperature.
The DRV8813 is available in a 28-pin HTSSOP
package with PowerPAD™ (Eco-friendly: RoHS & no
Sb/Br).
Device Information(1)
PART NUMBER
DRV8813
PACKAGE
HTSSOP (28)
BODY SIZE (NOM)
9.70 mm × 4.40 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
2 Applications
•
•
•
•
•
•
•
•
•
A simple parallel digital control interface is compatible
with industry-standard devices. Decay mode is
programmable.
Automatic Teller Machines
Money Handling Machines
Video Security Cameras
Printers
Scanners
Office Automation Machines
Gaming Machines
Factory Automation
Robotics
Simplified Schematic
8.2 V to 45 V
Decay Mode
Current Lvl
nFAULT
M
2.5 A
ENBL
Stepper
Motor
Driver
Current
Control
-
Controller
DRV8813
+
PHASE
+
-
2.5 A
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
DRV8813
SLVSA72E – APRIL 2010 – REVISED OCTOBER 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
5
5
5
7
Detailed Description .............................................. 8
7.1
7.2
7.3
7.4
8
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Overview ................................................................... 8
Functional Block Diagram ......................................... 8
Feature Description................................................... 9
Device Functional Modes........................................ 10
Application and Implementation ........................ 13
8.1 Application Information............................................ 13
8.2 Typical Application ................................................. 13
9
Power Supply Recommendations...................... 16
9.1 Bulk Capacitance .................................................... 16
9.2 Power Supply and Logic Sequencing ..................... 16
10 Layout................................................................... 17
10.1
10.2
10.3
10.4
Layout Guidelines .................................................
Layout Example ....................................................
Thermal Considerations ........................................
Power Dissipation .................................................
17
17
17
18
11 Device and Documentation Support ................. 19
11.1
11.2
11.3
11.4
11.5
Documentation Support ........................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
19
19
19
19
19
12 Mechanical, Packaging, and Orderable
Information ........................................................... 19
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision D (August 2013) to Revision E
Page
•
Updated Features section ..................................................................................................................................................... 1
•
Added ESD Ratings table, Feature Description section, Device Functional Modes section, Application and
Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation
Support section, and Mechanical, Packaging, and Orderable Information section. .............................................................. 1
•
Changed External Components text for VMA and VMB rows. .............................................................................................. 3
•
Changed MAX value for VMx row in Absolute Maximum Ratings. ....................................................................................... 4
•
Added Power supply ramp rate row to Absolute Maximum Ratings ..................................................................................... 4
•
Changed MIN value for ISENSEx pin voltage paramter from –0.3 to –0.8 ............................................................................ 4
•
Changed MIN value for Continuous motor drive output current paramter from –2.5 to 0...................................................... 4
2
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5 Pin Configuration and Functions
PWP Package
28-Pin HTSSOP
Top View
Pin Functions
PIN
NAME
NO.
I/O (1)
DESCRIPTION
EXTERNAL COMPONENTS OR CONNECTIONS
POWER AND GROUND
CP1
1
IO
Charge pump flying capacitor
CP2
2
IO
Charge pump flying capacitor
GND
14, 28
—
Device ground
VCP
3
IO
High-side gate drive voltage
VMA
4
—
Bridge A power supply
VMB
11
—
Bridge B power supply
V3P3OUT
15
O
3.3-V regulator output
Bypass to GND with a 0.47-μF 6.3-V ceramic
capacitor. Can be used to supply VREF.
AENBL
21
I
Bridge A enable
Logic high to enable bridge A. Internal pulldown.
APHASE
20
I
Bridge A phase (direction)
Logic high sets AOUT1 high, AOUT2 low. Internal
pulldown.
AI0
24
I
Bridge A current set
Sets bridge A current: 00 = 100%,
01 = 71%, 10 = 38%, 11 = 0
Internal pulldown.
Connect a 0.01-μF, 50-V capacitor between CP1 and
CP2.
Connect a 0.1-μF, 16-V ceramic capacitor and a 1-MΩ
resistor to VM.
Connect to motor supply (8.2 V to 45 V). Both pins
must be connected to the same supply, bypassed with
a 0.1 uF capacitor to GND, and connected to
appropriate bulk capacitance.
CONTROL
AI1
25
I
AVREF
12
I
Bridge A current set reference input
Reference voltage for winding current set. Can be
driven individually with an external DAC for
microstepping, or tied to a reference (for example,
V3P3OUT).
BENBL
22
I
Bridge B enable
Logic high to enable bridge B. Internal pulldown.
BI0
26
I
Bridge B current set
Sets bridge B current: 00 = 100%,
01 = 71%, 10 = 38%, 11 = 0
Internal pulldown.
Bridge B phase (direction)
Logic high sets BOUT1 high, BOUT2 low. Internal
pulldown.
BI1
27
I
BPHASE
23
I
(1)
Directions: I = input, O = output, OZ = tri-state output, OD = open-drain output, IO = input/output
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Pin Functions (continued)
PIN
I/O (1)
DESCRIPTION
EXTERNAL COMPONENTS OR CONNECTIONS
NAME
NO.
BVREF
13
I
Bridge B current set reference input
Reference voltage for winding current set. Can be
driven individually with an external DAC for
microstepping, or tied to a reference (for example,
V3P3OUT).
DECAY
19
I
Decay mode
Low = slow decay, open = mixed decay,
high = fast decay. Internal pulldown and pullup.
nRESET
16
I
Reset input
Active-low reset input initializes internal logic and
disables the H-bridge outputs. Internal pulldown.
nSLEEP
17
I
Sleep mode input
Logic high to enable device, logic low to enter lowpower sleep mode. Internal pulldown.
18
OD
Fault
Logic low when in fault condition (overtemperature,
overcurrent)
AOUT1
5
O
Bridge A output 1
AOUT2
7
O
Bridge A output 2
BOUT1
10
O
Bridge B output 1
BOUT2
8
O
Bridge B output 2
ISENA
6
IO
Bridge A ground / Isense
Connect to current sense resistor for bridge A
ISENB
9
IO
Bridge B ground / Isense
Connect to current sense resistor for bridge B
STATUS
nFAULT
OUTPUT
Connect to motor winding A
Connect to motor winding B
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
VMx
VREF
(1) (2)
Power supply voltage
MIN
MAX
–0.3
50
V
1
V/µs
Power supply ramp rate
Digital pin voltage
–0.5
7
V
Input voltage
–0.3
4
V
ISENSEx pin voltage (3)
–0.8
0.8
V
Peak motor drive output current, t < 1 μS
Continuous motor drive output current
Internally limited
(4)
0
Continuous total power dissipation
2.5
Operating virtual junction temperature
–40
TA
Operating ambient temperature
Tstg
Storage temperature
(2)
(3)
(4)
A
A
See Thermal Information
TJ
(1)
UNIT
150
°C
–40
85
°C
–60
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to network ground terminal.
Transients of ±1V for less than 25 ns are acceptable
Power dissipation and thermal limits must be observed.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
4
Electrostatic
discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins
(1)
Charged device model (CDM), per JEDEC specification JESD22-C101, all
pins (2)
UNIT
±2000
±500
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
(1)
NOM
MAX
UNIT
VM
Motor power supply voltage
8.2
45
VREF
VREF input voltage (2)
1
3.5
IV3P3
V3P3OUT load current
0
1
mA
fPWM
Externally applied PWM frequency
0
100
kHZ
(1)
(2)
V
V
All VM pins must be connected to the same supply voltage.
Operational at VREF from 0 V to 1 V, but accuracy is degraded.
6.4 Thermal Information
DRV8813
THERMAL METRIC (1)
PWP (HTSSOP)
UNIT
28 PINS
RθJA
Junction-to-ambient thermal resistance
31.6
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
15.9
°C/W
RθJB
Junction-to-board thermal resistance
5.6
°C/W
ψJT
Junction-to-top characterization parameter
0.2
°C/W
ψJB
Junction-to-board characterization parameter
5.5
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
1.4
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.5 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
POWER SUPPLIES
IVM
VM operating supply current
VM = 24 V, fPWM < 50 kHz
5
8
mA
IVMQ
VM sleep mode supply current
VM = 24 V
10
20
μA
VUVLO
VM undervoltage lockout voltage
VM rising
7.8
8.2
V
3.3
3.4
V
V3P3OUT REGULATOR
V3P3
V3P3OUT voltage
IOUT = 0 to 1 mA
3.2
LOGIC-LEVEL INPUTS
VIL
Input low voltage
VIH
Input high voltage
2.2
0.6
VHYS
Input hysteresis
0.3
IIL
Input low current
VIN = 0
IIH
Input high current
VIN = 3.3 V
RPD
Internal pulldown resistance
0.45
–20
0.7
V
5.25
V
0.6
V
20
μA
100
μA
100
kΩ
nFAULT OUTPUT (OPEN-DRAIN OUTPUT)
VOL
Output low voltage
IO = 5 mA
IOH
Output high leakage current
VO = 3.3 V
0.5
V
1
μA
0.8
V
±40
µA
DECAY INPUT
VIL
Input low threshold voltage
For slow decay mode
0
VIH
Input high threshold voltage
For fast decay mode
2
IIN
Input current
RPU
Internal pullup resistance (to 3.3 V)
RPD
Internal pulldown resistance
V
130
kΩ
80
kΩ
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Electrical Characteristics (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
H-BRIDGE FETS
HS FET on resistance
RDS(ON)
LS FET on resistance
IOFF
VM = 24 V, IO = 1 A, TJ = 25°C
0.2
VM = 24 V, IO = 1 A, TJ = 85°C
0.25
VM = 24 V, IO = 1 A, TJ = 25°C
0.2
VM = 24 V, IO = 1 A, TJ = 85°C
Off-state leakage current
0.25
–20
0.32
Ω
0.32
20
μA
MOTOR DRIVER
fPWM
Internal current control PWM
frequency
50
tBLANK
Current sense blanking time
3.75
tR
Rise time
30
200
ns
tF
Fall time
30
200
ns
kHz
μs
PROTECTION CIRCUITS
IOCP
Overcurrent protection trip level
tTSD
Thermal shutdown temperature
3
Die temperature
150
xVREF = 3.3 V
–3
A
160
180
°C
3
μA
CURRENT CONTROL
IREF
xVREF input current
VTRIP
xISENSE trip voltage
AISENSE
6
Current sense amplifier gain
xVREF = 3.3 V, 100% current setting
635
660
685
xVREF = 3.3 V, 71% current setting
445
469
492
xVREF = 3.3 V, 38% current setting
225
251
276
Reference only
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5
mV
V/V
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6.6 Typical Characteristics
7
14
6.5
12
IVMQ (PA)
IVM (mA)
6
5.5
10
5
8
-40qC
25qC
85qC
125qC
4.5
4
10
15
20
25
30
V(VMx) (V)
35
40
6
10
45
-40qC
25qC
85qC
125qC
15
Figure 1. IVMx vs V(VMx)
25
30
V(VMx) (V)
35
40
45
D002
Figure 2. IVMxQ vs V(VMx)
750
750
-40qC
25qC
85qC
125qC
700
RDS(ON) HS + LS (m:)
700
RDS(ON) HS + LS (m:)
20
D001
650
600
550
500
450
650
600
550
500
8V
24 V
45 V
450
400
8
13
18
23
28
V(VMx) (V)
33
38
400
-50
43
D003
Figure 3. RDS(ON) vs V(VMx)
-25
0
25
50
TA (qC)
75
100
125
D004
Figure 4. RDS(ON) vs Temperature
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7 Detailed Description
7.1 Overview
The DRV8813 is an integrated motor driver solution for a bipolar stepper motor or two brushed DC motors. The
device integrates two NMOS H-bridges, current sense, regulation circuitry, and detailed fault detection. The
DRV8813 can be powered with a supply voltage from 8.2 V to 45 V, and is capable of providing an output current
up to 2.5 A full-scale.
A PHASE/ENBL interface allows for simple interfacing to the controller circuit. The winding current control allows
the external controller to adjust the regulated current that is provided to the motor. The current regulation is
highly configurable, with three decay modes of operation. Fast, slow, and mixed decay can be selected
depending on the application requirements.
A low-power sleep mode is included, which allows the system to save power when not driving the motor.
7.2 Functional Block Diagram
VM
VM
CP1
Int. VCC
Internal
Reference &
Regs
LS Gate
Drive
0.01mF
CP2
VM
Charge
Pump
V3P3OUT
VCP
3.3 V
3.3V
0.1mF
Thermal
Shut down
HS Gate
Drive
1MW
VM
AVREF
VMA
BVREF
AOUT1
+
APHASE
Motor
Driver A
AENBL
Step
Motor
DCM
-
AOUT2
AI0
+
ISENA
AI1
-
BPHASE
BENBL
BI0
Control
Logic
VM
VMB
BI1
DECAY
BOUT1
Motor
Driver B
nRESET
BOUT2
nFAULT
ISENB
GND
8
DCM
nSLEEP
GND
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7.3 Feature Description
7.3.1 PWM Motor Drivers
The DRV8813 contains two H-bridge motor drivers with current-control PWM circuitry. Figure 5 shows a block
diagram of the motor control circuitry. A bipolar stepper motor is shown, but the drivers can also drive two
separate DC motors.
Figure 5. Motor Control Circuitry
There are multiple VM motor power supply pins. All VM pins must be connected together to the motor supply
voltage.
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Feature Description (continued)
7.3.2 Protection Circuits
The DRV8813 is fully protected against undervoltage, overcurrent and overtemperature events.
7.3.2.1 Overcurrent Protection (OCP)
An analog current limit circuit on each FET limits the current through the FET by removing the gate drive. If this
analog current limit persists for longer than the OCP time, all FETs in the H-bridge disables and the nFAULT pin
drives low. The device remains disabled until either nRESET pin is applied, or VM is removed and reapplied.
Overcurrent conditions on both high and low side devices; that is, a short to ground, supply, or across the motor
winding results in an overcurrent shutdown. Overcurrent protection does not use the current sense circuitry used
for PWM current control, and is independent of the ISENSE resistor value or VREF voltage.
7.3.2.2 Thermal Shutdown (TSD)
If the die temperature exceeds safe limits, all FETs in the H-bridge disables and the nFAULT pin drives low.
Once the die temperature has fallen to a safe level, operation automatically resumes.
7.3.2.3 Undervoltage Lockout (UVLO)
If at any time the voltage on the VM pins falls below the undervoltage lockout threshold voltage, all circuitry in the
device is disabled and internal logic resets. Operation resumes when VM rises above the UVLO threshold.
7.4 Device Functional Modes
7.4.1 Bridge Control
The xPHASE input pins control the direction of current flow through each H-bridge. The xENBL input pins enable
the H-bridge outputs when active high. Table 1 shows the logic.
Table 1. H-Bridge Logic
xENBL
xPHASE
xOUT1
xOUT2
0
1
X
Z
Z
1
H
1
L
0
L
H
The control inputs have internal pulldown resistors of approximately 100 kΩ.
7.4.2 Current Regulation
The current through the motor windings is regulated by a fixed-frequency PWM current regulation, or current
chopping. When an H-bridge is enabled, current rises through the winding at a rate dependent on the DC voltage
and inductance of the winding. Once the current hits the current chopping threshold, the bridge disables the
current until the beginning of the next PWM cycle.
For stepping motors, current regulation is normally used at all times, and can changing the current can be used
to microstep the motor. For DC motors, current regulation is used to limit the start-up and stall current of the
motor.
If the current regulation feature is not needed, it can be disabled by connecting the xISENSE pins directly to
ground and connecting the xVREF pins to V3P3.
The PWM chopping current is set by a comparator which compares the voltage across a current sense resistor
connected to the xISEN pins, multiplied by a factor of 5, with a reference voltage. The reference voltage is input
from the xVREF pins, and is scaled by a 2-bit DAC that allows current settings of 100%, 71%, 38% of full-scale,
plus zero.
10
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The full-scale (100%) chopping current is calculated in Equation 1.
VREFX
ICHOP
5 u RISENSE
(1)
Example:
If a 0.25-Ω sense resistor is used and the VREFx pin is 2.5 V, the full-scale (100%) chopping current is 2.5 V
/ (5 × 0.25 Ω) = 2 A.
Two input pins per H-bridge (xI1 and xI0) are used to scale the current in each bridge as a percentage of the fullscale current set by the VREF input pin and sense resistance. The xI0 and xI1 pins have internal pulldown
resistors of approximately 100 kΩ. The function of the pins is shown in Table 2.
Table 2. H-Bridge Pin Functions
xI1
xI0
RELATIVE CURRENT
(% FULL-SCALE CHOPPING CURRENT)
1
1
0% (Bridge disabled)
1
0
38%
0
1
71%
0
0
100%
When both xI bits are 1, the H-bridge is disabled and no current flows.
Example:
If a 0.25-Ω sense resistor is used and the VREF pin is 2.5 V, the chopping current is 2 A at the 100% setting
(xI1, xI0 = 00). At the 71% setting (xI1, xI0 = 01) the current is 2 A × 0.71 = 1.42 A, and at the 38% setting
(xI1, xI0 = 10) the current is 2 A × 0.38 = 0.76 A. If (xI1, xI0 = 11) the bridge disables and no current flows.
7.4.3 Decay Mode
During PWM current chopping, the H-bridge is enabled to drive current through the motor winding until the PWM
current chopping threshold is reached. This is shown in Figure 6 as case 1. The current flow direction shown
indicates the state when the xENBL pin is high.
Once the chopping current threshold is reached, the H-bridge can operate in two different states, fast decay or
slow decay.
In fast decay mode, once the PWM chopping current level has been reached, the H-bridge reverses state to
allow winding current to flow in a reverse direction. As the winding current approaches zero, the bridge is
disabled to prevent any reverse current flow. Fast decay mode is shown in Figure 6 as case 2.
In slow decay mode, winding current is recirculated by enabling both of the low-side FETs in the bridge. This is
shown in Figure 6 as case 3.
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Figure 6. Decay Mode
The DRV8813 supports fast decay, slow decay, and a mixed decay mode. Slow, fast, or mixed decay mode is
selected by the state of the DECAY pin - logic low selects slow decay, open selects mixed decay operation, and
logic high sets fast decay mode. The DECAY pin has both an internal pullup resistor of approximately 130 kΩ
and an internal pulldown resistor of approximately 80 kΩ. This sets the mixed decay mode if the pin is left open
or undriven. The DECAY pin sets the decay mode for both H-bridges.
Mixed decay mode begins as fast decay, but at a fixed period of time (75% of the PWM cycle) switches to slow
decay mode for the remainder of the fixed PWM period.
7.4.4 Blanking Time
After the current is enabled in an H-bridge, the voltage on the xISEN pin is ignored for a fixed period of time
before enabling the current sense circuitry. This blanking time is fixed at 3.75 μs. The blanking time also sets the
minimum on time of the PWM.
7.4.5 nRESET and nSLEEP Operation
The nRESET pin, when driven active low, resets the internal logic. It also disables the H-bridge drivers. All inputs
are ignored while nRESET is active.
Driving nSLEEP low puts the device into a low power sleep state. In this state, the H-bridges are disabled, the
gate drive charge pump is stopped, the V3P3OUT regulator is disabled, and all internal clocks are stopped. In
this state, all inputs are ignored until nSLEEP returns inactive high. When returning from sleep mode, some time
(approximately 1 ms) must to pass before the motor driver becomes fully operational. The nRESET and nSLEEP
have internal pulldown resistors of approximately 100 kΩ. These signals must be driven to logic high for device
operation.
12
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The DRV8813 can be used to control a bipolar stepper motor. The PHASE/ENBL interface controls the outputs
and current control can be implemented with the internal current regulation circuitry. Detailed fault reporting is
provided with the internal protection circuits and nFAULT pin.
8.2 Typical Application
DRV8813
CP1
GND
CP2
BI1
VCP
BI0
VMA
AI1
AOUT1
AI0
0.01 uF
1 MŸ
0.1 uF
+
0.01 uF
200 mŸ
ISENA
Stepper Motor
BPHASE
-
VM
100 uF
+
+
AOUT2
BENBL
BOUT2
AENBL
-
200 mŸ
ISENB
APHASE
V3P3OUT
BOUT1
DECAY
VMB
nFAULT
AVREF
nSLEEP
BVREF
nRESET
10 kŸ
V3P3OUT
10 kŸ
30 kŸ
GND
PPAD
0.01 uF
V3P3OUT
V3P3OUT
0.47 uF
Figure 7. Typical Application Schematic
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Typical Application (continued)
8.2.1 Design Requirements
Table 3 shows the design parameters for this application.
Table 3. Design Parameters
DESIGN PARAMETER
REFERENCE
EXAMPLE VALUE
Supply Voltage
VM
24 V
Motor Winding Resistance
RL
3.9 Ω
Motor Winding Inductance
IL
2.9 mH
Sense Resistor Value
RSENSE
200 mΩ
Target Full-Scale Current
IFS
1.25 A
8.2.2 Detailed Design Procedure
8.2.2.1 Current Regulation
In a stepper motor, the set full-scale current (IFS) is the maximum current driven through either winding. This
quantity depends on the xVREF analog voltage and the sense resistor value (RSENSE). During stepping, IFS
defines the current chopping threshold (ITRIP) for the maximum current step. The gain of DRV8813 is set for
5 V/V.
xVREF(V)
xVREF(V)
IFS (A)
A v u RSENSE (:) 5 u RSENSE (:)
(2)
To achieve IFS = 1.25 A with RSENSE of 0.2 Ω, xVREF should be 1.25 V.
8.2.2.2 Decay Modes
The DRV8813 supports three different decay modes: slow decay, fast decay, and mixed decay. The current
through the motor windings is regulated using a fixed-frequency PWM scheme. This means that after any drive
phase, when a motor winding current has hit the current chopping threshold (ITRIP), the DRV8813 places the
winding in one of the three decay modes until the PWM cycle has expired. Afterward, a new drive phase starts.
The blanking time, tBLANK, defines the minimum drive time for the current chopping. ITRIP is ignored during tBLANK,
so the winding current may overshoot the trip level.
8.2.2.3 Sense Resistor
For optimal performance, it is important for the sense resistor to be:
• Surface-mount
• Low inductance
• Rated for high enough power
• Placed closely to the motor driver
The power dissipated by the sense resistor equals Irms2 × R. For example, if the rms motor current is 2-A and a
100-mΩ sense resistor is used, the resistor dissipates 2 A2 × 0.1 Ω = 0.4 W. The power quickly increases with
greater current levels.
Resistors typically have a rated power within some ambient temperature range, along with a derated power curve
for high ambient temperatures. When a PCB is shared with other components generating heat, margin should
be added. It is always best to measure the actual sense resistor temperature in a final system, along with the
power MOSFETs, as those are often the hottest components.
Because power resistors are larger and more expensive than standard resistors, it is common practice to use
multiple standard resistors in parallel, between the sense node and ground. This distributes the current and heat
dissipation.
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8.2.3 Application Curves
Figure 8. Direction Change
Figure 9. Current Limiting
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9 Power Supply Recommendations
The DRV8813 is designed to operate from an input voltage supply (VMx) range from 8.2 V to 45 V. Two
0.1-µF ceramic capacitors rated for VMx must be placed as close as possible to the VMA and VMB pins
respectively (one on each pin). In addition to the local decoupling caps, additional bulk capacitance is required
and must be sized accordingly to the application requirements.
9.1 Bulk Capacitance
Bulk capacitance sizing is an important factor in motor drive system design. It is dependent on a variety of factors
including:
• Type of power supply
• Acceptable supply voltage ripple
• Parasitic inductance in the power supply wiring
• Type of motor (brushed DC, brushless DC, stepper)
• Motor start-up current
• Motor braking method
The inductance between the power supply and motor drive system limits the rate current can change from the
power supply. If the local bulk capacitance is too small, the system responds to excessive current demands or
dumps from the motor with a change in voltage. You should size the bulk capacitance to meet acceptable
voltage ripple levels.
The data sheet generally provides a recommended value but system level testing is required to determine the
appropriate sized bulk capacitor.
Power Supply
Parasitic Wire
Inductance
Motor Drive System
VM
+
±
+
Motor
Driver
GND
Local
Bulk Capacitor
IC Bypass
Capacitor
Figure 10. Setup of Motor Drive System With External Power Supply
9.2 Power Supply and Logic Sequencing
There is no specific sequence for powering-up the DRV8813. It is okay for digital input signals to be present
before VMx is applied. After VMx is applied to the DRV8813, it begins operation based on the status of the
control pins.
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10 Layout
10.1 Layout Guidelines
•
•
•
•
•
The VMA and VMB pins should be bypassed to GND using low-ESR ceramic bypass capacitors with a
recommended value of 0.1-μF rated for VMx. This capacitor should be placed as close to the VMA and VMB
pins as possible with a thick trace or ground plane connection to the device GND pin.
The VMA and VMB pins must be bypassed to ground using an appropriate bulk capacitor. This component
may be an electrolytic and should be located close to the DRV8813.
A low-ESR ceramic capacitor must be placed in between the CPL and CPH pins. TI recommends a value of
0.01-μF rated for VMx. Place this component as close to the pins as possible.
A low-ESR ceramic capacitor must be placed in between the VMA and VCP pins. TI recommends a value of
0.1-μF rated for 16 V. Place this component as close to the pins as possible. Also, place a 1-MΩ resistor
between VCP and VMA.
Bypass V3P3 to ground with a ceramic capacitor rated 6.3 V. Place this bypass capacitor as close to the pin
as possible.
10.2 Layout Example
0.1 µF
CP1
GND
CP2
BI1
VCP
BI0
0.01 µF
1 0Ÿ
0.1 µF
RISENA
RISENB
VMA
AI1
AOUT1
AI0
ISENA
BPHASE
AOUT2
BENBL
BOUT2
AENBL
ISENB
APHASE
BOUT1
DECAY
VMB
nFAULT
AVREF
nSLEEP
BVREF
nRESET
GND
V3P3OUT
+
0.1 µF
0.47 µF
Figure 11. DRV8813 Layout Example
10.3 Thermal Considerations
10.3.1 Thermal Protection
The DRV8813 has thermal shutdown (TSD) as described in Thermal Shutdown (TSD). If the die temperature
exceeds approximately 150°C, the device is disabled until the temperature drops to a safe level.
Any tendency of the device to enter TSD is an indication of either excessive power dissipation, insufficient
heatsinking, or too high an ambient temperature.
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Thermal Considerations (continued)
10.3.2 Heatsinking
The PowerPAD™ package uses an exposed pad to remove heat from the device. For proper operation, this pad
must be thermally connected to copper on the PCB to dissipate heat. On a multilayer PCB with a ground plane,
this can be accomplished by adding a number of vias to connect the thermal pad to the ground plane. On PCBs
without internal planes, copper area can be added on either side of the PCB to dissipate heat. If the copper area
is on the opposite side of the PCB from the device, thermal vias are used to transfer the heat between top and
bottom layers.
For details about how to design the PCB, see TI application reportPowerPAD™ Thermally Enhanced Package
SLMA002, and TI application brief SLMA004, PowerPAD™ Made Easy, available at www.ti.com.
In general, the more copper area that can be provided, the more power can be dissipated.
10.4 Power Dissipation
Power dissipation in the DRV8813 is dominated by the power dissipated in the output FET resistance, or RDS(ON).
Average power dissipation when running a stepper motor can be roughly estimated by Equation 3.
PTOT
4 u RDS(ON) u IOUT(RMS)
2
where
•
•
•
•
PTOT is the total power dissipation
RDS(ON) is the resistance of each FET
IOUT(RMS) is the RMS output current being applied to each winding.
IOUT(RMS) is equal to the approximately 0.7× the full-scale output current setting.
(3)
The factor of 4 comes from the fact that there are two motor windings, and at any instant two FETs are
conducting winding current for each winding (one high-side and one low-side).
The maximum amount of power that can be dissipated in the device is dependent on ambient temperature and
heatsinking.
RDS(ON) increases with temperature, so as the device heats, the power dissipation increases. This must be taken
into consideration when sizing the heatsink.
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation see the following:
• PowerPAD™ Thermally Enhanced Package, SLMA002.
• PowerPAD™ Made Easy, SLMA004.
11.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.3 Trademarks
PowerPAD, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
11.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
DRV8813PWP
ACTIVE
HTSSOP
PWP
28
50
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 85
DRV8813
DRV8813PWPR
ACTIVE
HTSSOP
PWP
28
2000
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 85
DRV8813
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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