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DRV8813PWPR

DRV8813PWPR

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    HTSSOP28_9.7X4.4MM_EP

  • 描述:

    双桥电机控制器IC

  • 数据手册
  • 价格&库存
DRV8813PWPR 数据手册
Sample & Buy Product Folder Support & Community Tools & Software Technical Documents DRV8813 SLVSA72E – APRIL 2010 – REVISED OCTOBER 2015 DRV8813 Dual-Bridge Motor Controller IC 1 Features 3 Description • • The DRV8813 provides an integrated motor driver solution for printers, scanners, and other automated equipment applications. The device has two H-bridge drivers, and can drive a bipolar stepper motor or two DC motors. The output driver block for each consists of N-channel power MOSFETs configured as full Hbridges to drive the motor windings. The DRV8813 can supply up to 2.5-A peak or 1.75-A RMS output current (with proper heatsinking at 24 V and 25°C). 1 • • • • • • • 8.2-V to 45-V Operating Supply Voltage Range 2.5-A Maximum Drive Current at 24 V and TA = 25°C Dual H-Bridge Current Control Motor Driver – Drive a Bipolar Stepper or Two DC Motors – Four Level Winding Current Control Multiple Decay Modes – Mixed Decay – Slow Decay – Fast Decay Industry Standard Parallel Digital Control Interface Low Current Sleep Mode Built In 3.3-V Reference Output Small Package and Footprint Protection Features – Overcurrent Protection (OCP) – Thermal Shutdown (TSD) – VM Undervoltage Lockout (UVLO) – Fault Condition Indication Pin (nFAULT) Internal shutdown functions are provided for overcurrent protection, short circuit protection, undervoltage lockout and overtemperature. The DRV8813 is available in a 28-pin HTSSOP package with PowerPAD™ (Eco-friendly: RoHS & no Sb/Br). Device Information(1) PART NUMBER DRV8813 PACKAGE HTSSOP (28) BODY SIZE (NOM) 9.70 mm × 4.40 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. 2 Applications • • • • • • • • • A simple parallel digital control interface is compatible with industry-standard devices. Decay mode is programmable. Automatic Teller Machines Money Handling Machines Video Security Cameras Printers Scanners Office Automation Machines Gaming Machines Factory Automation Robotics Simplified Schematic 8.2 V to 45 V Decay Mode Current Lvl nFAULT M 2.5 A ENBL Stepper Motor Driver Current Control - Controller DRV8813 + PHASE + - 2.5 A 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. DRV8813 SLVSA72E – APRIL 2010 – REVISED OCTOBER 2015 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 4 4 5 5 5 7 Detailed Description .............................................. 8 7.1 7.2 7.3 7.4 8 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Typical Characteristics .............................................. Overview ................................................................... 8 Functional Block Diagram ......................................... 8 Feature Description................................................... 9 Device Functional Modes........................................ 10 Application and Implementation ........................ 13 8.1 Application Information............................................ 13 8.2 Typical Application ................................................. 13 9 Power Supply Recommendations...................... 16 9.1 Bulk Capacitance .................................................... 16 9.2 Power Supply and Logic Sequencing ..................... 16 10 Layout................................................................... 17 10.1 10.2 10.3 10.4 Layout Guidelines ................................................. Layout Example .................................................... Thermal Considerations ........................................ Power Dissipation ................................................. 17 17 17 18 11 Device and Documentation Support ................. 19 11.1 11.2 11.3 11.4 11.5 Documentation Support ........................................ Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 19 19 19 19 19 12 Mechanical, Packaging, and Orderable Information ........................................................... 19 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision D (August 2013) to Revision E Page • Updated Features section ..................................................................................................................................................... 1 • Added ESD Ratings table, Feature Description section, Device Functional Modes section, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section. .............................................................. 1 • Changed External Components text for VMA and VMB rows. .............................................................................................. 3 • Changed MAX value for VMx row in Absolute Maximum Ratings. ....................................................................................... 4 • Added Power supply ramp rate row to Absolute Maximum Ratings ..................................................................................... 4 • Changed MIN value for ISENSEx pin voltage paramter from –0.3 to –0.8 ............................................................................ 4 • Changed MIN value for Continuous motor drive output current paramter from –2.5 to 0...................................................... 4 2 Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: DRV8813 DRV8813 www.ti.com SLVSA72E – APRIL 2010 – REVISED OCTOBER 2015 5 Pin Configuration and Functions PWP Package 28-Pin HTSSOP Top View Pin Functions PIN NAME NO. I/O (1) DESCRIPTION EXTERNAL COMPONENTS OR CONNECTIONS POWER AND GROUND CP1 1 IO Charge pump flying capacitor CP2 2 IO Charge pump flying capacitor GND 14, 28 — Device ground VCP 3 IO High-side gate drive voltage VMA 4 — Bridge A power supply VMB 11 — Bridge B power supply V3P3OUT 15 O 3.3-V regulator output Bypass to GND with a 0.47-μF 6.3-V ceramic capacitor. Can be used to supply VREF. AENBL 21 I Bridge A enable Logic high to enable bridge A. Internal pulldown. APHASE 20 I Bridge A phase (direction) Logic high sets AOUT1 high, AOUT2 low. Internal pulldown. AI0 24 I Bridge A current set Sets bridge A current: 00 = 100%, 01 = 71%, 10 = 38%, 11 = 0 Internal pulldown. Connect a 0.01-μF, 50-V capacitor between CP1 and CP2. Connect a 0.1-μF, 16-V ceramic capacitor and a 1-MΩ resistor to VM. Connect to motor supply (8.2 V to 45 V). Both pins must be connected to the same supply, bypassed with a 0.1 uF capacitor to GND, and connected to appropriate bulk capacitance. CONTROL AI1 25 I AVREF 12 I Bridge A current set reference input Reference voltage for winding current set. Can be driven individually with an external DAC for microstepping, or tied to a reference (for example, V3P3OUT). BENBL 22 I Bridge B enable Logic high to enable bridge B. Internal pulldown. BI0 26 I Bridge B current set Sets bridge B current: 00 = 100%, 01 = 71%, 10 = 38%, 11 = 0 Internal pulldown. Bridge B phase (direction) Logic high sets BOUT1 high, BOUT2 low. Internal pulldown. BI1 27 I BPHASE 23 I (1) Directions: I = input, O = output, OZ = tri-state output, OD = open-drain output, IO = input/output Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: DRV8813 3 DRV8813 SLVSA72E – APRIL 2010 – REVISED OCTOBER 2015 www.ti.com Pin Functions (continued) PIN I/O (1) DESCRIPTION EXTERNAL COMPONENTS OR CONNECTIONS NAME NO. BVREF 13 I Bridge B current set reference input Reference voltage for winding current set. Can be driven individually with an external DAC for microstepping, or tied to a reference (for example, V3P3OUT). DECAY 19 I Decay mode Low = slow decay, open = mixed decay, high = fast decay. Internal pulldown and pullup. nRESET 16 I Reset input Active-low reset input initializes internal logic and disables the H-bridge outputs. Internal pulldown. nSLEEP 17 I Sleep mode input Logic high to enable device, logic low to enter lowpower sleep mode. Internal pulldown. 18 OD Fault Logic low when in fault condition (overtemperature, overcurrent) AOUT1 5 O Bridge A output 1 AOUT2 7 O Bridge A output 2 BOUT1 10 O Bridge B output 1 BOUT2 8 O Bridge B output 2 ISENA 6 IO Bridge A ground / Isense Connect to current sense resistor for bridge A ISENB 9 IO Bridge B ground / Isense Connect to current sense resistor for bridge B STATUS nFAULT OUTPUT Connect to motor winding A Connect to motor winding B 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) VMx VREF (1) (2) Power supply voltage MIN MAX –0.3 50 V 1 V/µs Power supply ramp rate Digital pin voltage –0.5 7 V Input voltage –0.3 4 V ISENSEx pin voltage (3) –0.8 0.8 V Peak motor drive output current, t < 1 μS Continuous motor drive output current Internally limited (4) 0 Continuous total power dissipation 2.5 Operating virtual junction temperature –40 TA Operating ambient temperature Tstg Storage temperature (2) (3) (4) A A See Thermal Information TJ (1) UNIT 150 °C –40 85 °C –60 150 °C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to network ground terminal. Transients of ±1V for less than 25 ns are acceptable Power dissipation and thermal limits must be observed. 6.2 ESD Ratings VALUE V(ESD) (1) (2) 4 Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1) Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2) UNIT ±2000 ±500 V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: DRV8813 DRV8813 www.ti.com SLVSA72E – APRIL 2010 – REVISED OCTOBER 2015 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN (1) NOM MAX UNIT VM Motor power supply voltage 8.2 45 VREF VREF input voltage (2) 1 3.5 IV3P3 V3P3OUT load current 0 1 mA fPWM Externally applied PWM frequency 0 100 kHZ (1) (2) V V All VM pins must be connected to the same supply voltage. Operational at VREF from 0 V to 1 V, but accuracy is degraded. 6.4 Thermal Information DRV8813 THERMAL METRIC (1) PWP (HTSSOP) UNIT 28 PINS RθJA Junction-to-ambient thermal resistance 31.6 °C/W RθJC(top) Junction-to-case (top) thermal resistance 15.9 °C/W RθJB Junction-to-board thermal resistance 5.6 °C/W ψJT Junction-to-top characterization parameter 0.2 °C/W ψJB Junction-to-board characterization parameter 5.5 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 1.4 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 6.5 Electrical Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT POWER SUPPLIES IVM VM operating supply current VM = 24 V, fPWM < 50 kHz 5 8 mA IVMQ VM sleep mode supply current VM = 24 V 10 20 μA VUVLO VM undervoltage lockout voltage VM rising 7.8 8.2 V 3.3 3.4 V V3P3OUT REGULATOR V3P3 V3P3OUT voltage IOUT = 0 to 1 mA 3.2 LOGIC-LEVEL INPUTS VIL Input low voltage VIH Input high voltage 2.2 0.6 VHYS Input hysteresis 0.3 IIL Input low current VIN = 0 IIH Input high current VIN = 3.3 V RPD Internal pulldown resistance 0.45 –20 0.7 V 5.25 V 0.6 V 20 μA 100 μA 100 kΩ nFAULT OUTPUT (OPEN-DRAIN OUTPUT) VOL Output low voltage IO = 5 mA IOH Output high leakage current VO = 3.3 V 0.5 V 1 μA 0.8 V ±40 µA DECAY INPUT VIL Input low threshold voltage For slow decay mode 0 VIH Input high threshold voltage For fast decay mode 2 IIN Input current RPU Internal pullup resistance (to 3.3 V) RPD Internal pulldown resistance V 130 kΩ 80 kΩ Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: DRV8813 5 DRV8813 SLVSA72E – APRIL 2010 – REVISED OCTOBER 2015 www.ti.com Electrical Characteristics (continued) over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT H-BRIDGE FETS HS FET on resistance RDS(ON) LS FET on resistance IOFF VM = 24 V, IO = 1 A, TJ = 25°C 0.2 VM = 24 V, IO = 1 A, TJ = 85°C 0.25 VM = 24 V, IO = 1 A, TJ = 25°C 0.2 VM = 24 V, IO = 1 A, TJ = 85°C Off-state leakage current 0.25 –20 0.32 Ω 0.32 20 μA MOTOR DRIVER fPWM Internal current control PWM frequency 50 tBLANK Current sense blanking time 3.75 tR Rise time 30 200 ns tF Fall time 30 200 ns kHz μs PROTECTION CIRCUITS IOCP Overcurrent protection trip level tTSD Thermal shutdown temperature 3 Die temperature 150 xVREF = 3.3 V –3 A 160 180 °C 3 μA CURRENT CONTROL IREF xVREF input current VTRIP xISENSE trip voltage AISENSE 6 Current sense amplifier gain xVREF = 3.3 V, 100% current setting 635 660 685 xVREF = 3.3 V, 71% current setting 445 469 492 xVREF = 3.3 V, 38% current setting 225 251 276 Reference only Submit Documentation Feedback 5 mV V/V Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: DRV8813 DRV8813 www.ti.com SLVSA72E – APRIL 2010 – REVISED OCTOBER 2015 6.6 Typical Characteristics 7 14 6.5 12 IVMQ (PA) IVM (mA) 6 5.5 10 5 8 -40qC 25qC 85qC 125qC 4.5 4 10 15 20 25 30 V(VMx) (V) 35 40 6 10 45 -40qC 25qC 85qC 125qC 15 Figure 1. IVMx vs V(VMx) 25 30 V(VMx) (V) 35 40 45 D002 Figure 2. IVMxQ vs V(VMx) 750 750 -40qC 25qC 85qC 125qC 700 RDS(ON) HS + LS (m:) 700 RDS(ON) HS + LS (m:) 20 D001 650 600 550 500 450 650 600 550 500 8V 24 V 45 V 450 400 8 13 18 23 28 V(VMx) (V) 33 38 400 -50 43 D003 Figure 3. RDS(ON) vs V(VMx) -25 0 25 50 TA (qC) 75 100 125 D004 Figure 4. RDS(ON) vs Temperature Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: DRV8813 7 DRV8813 SLVSA72E – APRIL 2010 – REVISED OCTOBER 2015 www.ti.com 7 Detailed Description 7.1 Overview The DRV8813 is an integrated motor driver solution for a bipolar stepper motor or two brushed DC motors. The device integrates two NMOS H-bridges, current sense, regulation circuitry, and detailed fault detection. The DRV8813 can be powered with a supply voltage from 8.2 V to 45 V, and is capable of providing an output current up to 2.5 A full-scale. A PHASE/ENBL interface allows for simple interfacing to the controller circuit. The winding current control allows the external controller to adjust the regulated current that is provided to the motor. The current regulation is highly configurable, with three decay modes of operation. Fast, slow, and mixed decay can be selected depending on the application requirements. A low-power sleep mode is included, which allows the system to save power when not driving the motor. 7.2 Functional Block Diagram VM VM CP1 Int. VCC Internal Reference & Regs LS Gate Drive 0.01mF CP2 VM Charge Pump V3P3OUT VCP 3.3 V 3.3V 0.1mF Thermal Shut down HS Gate Drive 1MW VM AVREF VMA BVREF AOUT1 + APHASE Motor Driver A AENBL Step Motor DCM - AOUT2 AI0 + ISENA AI1 - BPHASE BENBL BI0 Control Logic VM VMB BI1 DECAY BOUT1 Motor Driver B nRESET BOUT2 nFAULT ISENB GND 8 DCM nSLEEP GND Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: DRV8813 DRV8813 www.ti.com SLVSA72E – APRIL 2010 – REVISED OCTOBER 2015 7.3 Feature Description 7.3.1 PWM Motor Drivers The DRV8813 contains two H-bridge motor drivers with current-control PWM circuitry. Figure 5 shows a block diagram of the motor control circuitry. A bipolar stepper motor is shown, but the drivers can also drive two separate DC motors. Figure 5. Motor Control Circuitry There are multiple VM motor power supply pins. All VM pins must be connected together to the motor supply voltage. Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: DRV8813 9 DRV8813 SLVSA72E – APRIL 2010 – REVISED OCTOBER 2015 www.ti.com Feature Description (continued) 7.3.2 Protection Circuits The DRV8813 is fully protected against undervoltage, overcurrent and overtemperature events. 7.3.2.1 Overcurrent Protection (OCP) An analog current limit circuit on each FET limits the current through the FET by removing the gate drive. If this analog current limit persists for longer than the OCP time, all FETs in the H-bridge disables and the nFAULT pin drives low. The device remains disabled until either nRESET pin is applied, or VM is removed and reapplied. Overcurrent conditions on both high and low side devices; that is, a short to ground, supply, or across the motor winding results in an overcurrent shutdown. Overcurrent protection does not use the current sense circuitry used for PWM current control, and is independent of the ISENSE resistor value or VREF voltage. 7.3.2.2 Thermal Shutdown (TSD) If the die temperature exceeds safe limits, all FETs in the H-bridge disables and the nFAULT pin drives low. Once the die temperature has fallen to a safe level, operation automatically resumes. 7.3.2.3 Undervoltage Lockout (UVLO) If at any time the voltage on the VM pins falls below the undervoltage lockout threshold voltage, all circuitry in the device is disabled and internal logic resets. Operation resumes when VM rises above the UVLO threshold. 7.4 Device Functional Modes 7.4.1 Bridge Control The xPHASE input pins control the direction of current flow through each H-bridge. The xENBL input pins enable the H-bridge outputs when active high. Table 1 shows the logic. Table 1. H-Bridge Logic xENBL xPHASE xOUT1 xOUT2 0 1 X Z Z 1 H 1 L 0 L H The control inputs have internal pulldown resistors of approximately 100 kΩ. 7.4.2 Current Regulation The current through the motor windings is regulated by a fixed-frequency PWM current regulation, or current chopping. When an H-bridge is enabled, current rises through the winding at a rate dependent on the DC voltage and inductance of the winding. Once the current hits the current chopping threshold, the bridge disables the current until the beginning of the next PWM cycle. For stepping motors, current regulation is normally used at all times, and can changing the current can be used to microstep the motor. For DC motors, current regulation is used to limit the start-up and stall current of the motor. If the current regulation feature is not needed, it can be disabled by connecting the xISENSE pins directly to ground and connecting the xVREF pins to V3P3. The PWM chopping current is set by a comparator which compares the voltage across a current sense resistor connected to the xISEN pins, multiplied by a factor of 5, with a reference voltage. The reference voltage is input from the xVREF pins, and is scaled by a 2-bit DAC that allows current settings of 100%, 71%, 38% of full-scale, plus zero. 10 Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: DRV8813 DRV8813 www.ti.com SLVSA72E – APRIL 2010 – REVISED OCTOBER 2015 The full-scale (100%) chopping current is calculated in Equation 1. VREFX ICHOP 5 u RISENSE (1) Example: If a 0.25-Ω sense resistor is used and the VREFx pin is 2.5 V, the full-scale (100%) chopping current is 2.5 V / (5 × 0.25 Ω) = 2 A. Two input pins per H-bridge (xI1 and xI0) are used to scale the current in each bridge as a percentage of the fullscale current set by the VREF input pin and sense resistance. The xI0 and xI1 pins have internal pulldown resistors of approximately 100 kΩ. The function of the pins is shown in Table 2. Table 2. H-Bridge Pin Functions xI1 xI0 RELATIVE CURRENT (% FULL-SCALE CHOPPING CURRENT) 1 1 0% (Bridge disabled) 1 0 38% 0 1 71% 0 0 100% When both xI bits are 1, the H-bridge is disabled and no current flows. Example: If a 0.25-Ω sense resistor is used and the VREF pin is 2.5 V, the chopping current is 2 A at the 100% setting (xI1, xI0 = 00). At the 71% setting (xI1, xI0 = 01) the current is 2 A × 0.71 = 1.42 A, and at the 38% setting (xI1, xI0 = 10) the current is 2 A × 0.38 = 0.76 A. If (xI1, xI0 = 11) the bridge disables and no current flows. 7.4.3 Decay Mode During PWM current chopping, the H-bridge is enabled to drive current through the motor winding until the PWM current chopping threshold is reached. This is shown in Figure 6 as case 1. The current flow direction shown indicates the state when the xENBL pin is high. Once the chopping current threshold is reached, the H-bridge can operate in two different states, fast decay or slow decay. In fast decay mode, once the PWM chopping current level has been reached, the H-bridge reverses state to allow winding current to flow in a reverse direction. As the winding current approaches zero, the bridge is disabled to prevent any reverse current flow. Fast decay mode is shown in Figure 6 as case 2. In slow decay mode, winding current is recirculated by enabling both of the low-side FETs in the bridge. This is shown in Figure 6 as case 3. Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: DRV8813 11 DRV8813 SLVSA72E – APRIL 2010 – REVISED OCTOBER 2015 www.ti.com Figure 6. Decay Mode The DRV8813 supports fast decay, slow decay, and a mixed decay mode. Slow, fast, or mixed decay mode is selected by the state of the DECAY pin - logic low selects slow decay, open selects mixed decay operation, and logic high sets fast decay mode. The DECAY pin has both an internal pullup resistor of approximately 130 kΩ and an internal pulldown resistor of approximately 80 kΩ. This sets the mixed decay mode if the pin is left open or undriven. The DECAY pin sets the decay mode for both H-bridges. Mixed decay mode begins as fast decay, but at a fixed period of time (75% of the PWM cycle) switches to slow decay mode for the remainder of the fixed PWM period. 7.4.4 Blanking Time After the current is enabled in an H-bridge, the voltage on the xISEN pin is ignored for a fixed period of time before enabling the current sense circuitry. This blanking time is fixed at 3.75 μs. The blanking time also sets the minimum on time of the PWM. 7.4.5 nRESET and nSLEEP Operation The nRESET pin, when driven active low, resets the internal logic. It also disables the H-bridge drivers. All inputs are ignored while nRESET is active. Driving nSLEEP low puts the device into a low power sleep state. In this state, the H-bridges are disabled, the gate drive charge pump is stopped, the V3P3OUT regulator is disabled, and all internal clocks are stopped. In this state, all inputs are ignored until nSLEEP returns inactive high. When returning from sleep mode, some time (approximately 1 ms) must to pass before the motor driver becomes fully operational. The nRESET and nSLEEP have internal pulldown resistors of approximately 100 kΩ. These signals must be driven to logic high for device operation. 12 Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: DRV8813 DRV8813 www.ti.com SLVSA72E – APRIL 2010 – REVISED OCTOBER 2015 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information The DRV8813 can be used to control a bipolar stepper motor. The PHASE/ENBL interface controls the outputs and current control can be implemented with the internal current regulation circuitry. Detailed fault reporting is provided with the internal protection circuits and nFAULT pin. 8.2 Typical Application DRV8813 CP1 GND CP2 BI1 VCP BI0 VMA AI1 AOUT1 AI0 0.01 uF 1 MŸ 0.1 uF + 0.01 uF 200 mŸ ISENA Stepper Motor BPHASE - VM 100 uF + + AOUT2 BENBL BOUT2 AENBL - 200 mŸ ISENB APHASE V3P3OUT BOUT1 DECAY VMB nFAULT AVREF nSLEEP BVREF nRESET 10 kŸ V3P3OUT 10 kŸ 30 kŸ GND PPAD 0.01 uF V3P3OUT V3P3OUT 0.47 uF Figure 7. Typical Application Schematic Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: DRV8813 13 DRV8813 SLVSA72E – APRIL 2010 – REVISED OCTOBER 2015 www.ti.com Typical Application (continued) 8.2.1 Design Requirements Table 3 shows the design parameters for this application. Table 3. Design Parameters DESIGN PARAMETER REFERENCE EXAMPLE VALUE Supply Voltage VM 24 V Motor Winding Resistance RL 3.9 Ω Motor Winding Inductance IL 2.9 mH Sense Resistor Value RSENSE 200 mΩ Target Full-Scale Current IFS 1.25 A 8.2.2 Detailed Design Procedure 8.2.2.1 Current Regulation In a stepper motor, the set full-scale current (IFS) is the maximum current driven through either winding. This quantity depends on the xVREF analog voltage and the sense resistor value (RSENSE). During stepping, IFS defines the current chopping threshold (ITRIP) for the maximum current step. The gain of DRV8813 is set for 5 V/V. xVREF(V) xVREF(V) IFS (A) A v u RSENSE (:) 5 u RSENSE (:) (2) To achieve IFS = 1.25 A with RSENSE of 0.2 Ω, xVREF should be 1.25 V. 8.2.2.2 Decay Modes The DRV8813 supports three different decay modes: slow decay, fast decay, and mixed decay. The current through the motor windings is regulated using a fixed-frequency PWM scheme. This means that after any drive phase, when a motor winding current has hit the current chopping threshold (ITRIP), the DRV8813 places the winding in one of the three decay modes until the PWM cycle has expired. Afterward, a new drive phase starts. The blanking time, tBLANK, defines the minimum drive time for the current chopping. ITRIP is ignored during tBLANK, so the winding current may overshoot the trip level. 8.2.2.3 Sense Resistor For optimal performance, it is important for the sense resistor to be: • Surface-mount • Low inductance • Rated for high enough power • Placed closely to the motor driver The power dissipated by the sense resistor equals Irms2 × R. For example, if the rms motor current is 2-A and a 100-mΩ sense resistor is used, the resistor dissipates 2 A2 × 0.1 Ω = 0.4 W. The power quickly increases with greater current levels. Resistors typically have a rated power within some ambient temperature range, along with a derated power curve for high ambient temperatures. When a PCB is shared with other components generating heat, margin should be added. It is always best to measure the actual sense resistor temperature in a final system, along with the power MOSFETs, as those are often the hottest components. Because power resistors are larger and more expensive than standard resistors, it is common practice to use multiple standard resistors in parallel, between the sense node and ground. This distributes the current and heat dissipation. 14 Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: DRV8813 DRV8813 www.ti.com SLVSA72E – APRIL 2010 – REVISED OCTOBER 2015 8.2.3 Application Curves Figure 8. Direction Change Figure 9. Current Limiting Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: DRV8813 15 DRV8813 SLVSA72E – APRIL 2010 – REVISED OCTOBER 2015 www.ti.com 9 Power Supply Recommendations The DRV8813 is designed to operate from an input voltage supply (VMx) range from 8.2 V to 45 V. Two 0.1-µF ceramic capacitors rated for VMx must be placed as close as possible to the VMA and VMB pins respectively (one on each pin). In addition to the local decoupling caps, additional bulk capacitance is required and must be sized accordingly to the application requirements. 9.1 Bulk Capacitance Bulk capacitance sizing is an important factor in motor drive system design. It is dependent on a variety of factors including: • Type of power supply • Acceptable supply voltage ripple • Parasitic inductance in the power supply wiring • Type of motor (brushed DC, brushless DC, stepper) • Motor start-up current • Motor braking method The inductance between the power supply and motor drive system limits the rate current can change from the power supply. If the local bulk capacitance is too small, the system responds to excessive current demands or dumps from the motor with a change in voltage. You should size the bulk capacitance to meet acceptable voltage ripple levels. The data sheet generally provides a recommended value but system level testing is required to determine the appropriate sized bulk capacitor. Power Supply Parasitic Wire Inductance Motor Drive System VM + ± + Motor Driver GND Local Bulk Capacitor IC Bypass Capacitor Figure 10. Setup of Motor Drive System With External Power Supply 9.2 Power Supply and Logic Sequencing There is no specific sequence for powering-up the DRV8813. It is okay for digital input signals to be present before VMx is applied. After VMx is applied to the DRV8813, it begins operation based on the status of the control pins. 16 Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: DRV8813 DRV8813 www.ti.com SLVSA72E – APRIL 2010 – REVISED OCTOBER 2015 10 Layout 10.1 Layout Guidelines • • • • • The VMA and VMB pins should be bypassed to GND using low-ESR ceramic bypass capacitors with a recommended value of 0.1-μF rated for VMx. This capacitor should be placed as close to the VMA and VMB pins as possible with a thick trace or ground plane connection to the device GND pin. The VMA and VMB pins must be bypassed to ground using an appropriate bulk capacitor. This component may be an electrolytic and should be located close to the DRV8813. A low-ESR ceramic capacitor must be placed in between the CPL and CPH pins. TI recommends a value of 0.01-μF rated for VMx. Place this component as close to the pins as possible. A low-ESR ceramic capacitor must be placed in between the VMA and VCP pins. TI recommends a value of 0.1-μF rated for 16 V. Place this component as close to the pins as possible. Also, place a 1-MΩ resistor between VCP and VMA. Bypass V3P3 to ground with a ceramic capacitor rated 6.3 V. Place this bypass capacitor as close to the pin as possible. 10.2 Layout Example 0.1 µF CP1 GND CP2 BI1 VCP BI0 0.01 µF 1 0Ÿ 0.1 µF RISENA RISENB VMA AI1 AOUT1 AI0 ISENA BPHASE AOUT2 BENBL BOUT2 AENBL ISENB APHASE BOUT1 DECAY VMB nFAULT AVREF nSLEEP BVREF nRESET GND V3P3OUT + 0.1 µF 0.47 µF Figure 11. DRV8813 Layout Example 10.3 Thermal Considerations 10.3.1 Thermal Protection The DRV8813 has thermal shutdown (TSD) as described in Thermal Shutdown (TSD). If the die temperature exceeds approximately 150°C, the device is disabled until the temperature drops to a safe level. Any tendency of the device to enter TSD is an indication of either excessive power dissipation, insufficient heatsinking, or too high an ambient temperature. Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: DRV8813 17 DRV8813 SLVSA72E – APRIL 2010 – REVISED OCTOBER 2015 www.ti.com Thermal Considerations (continued) 10.3.2 Heatsinking The PowerPAD™ package uses an exposed pad to remove heat from the device. For proper operation, this pad must be thermally connected to copper on the PCB to dissipate heat. On a multilayer PCB with a ground plane, this can be accomplished by adding a number of vias to connect the thermal pad to the ground plane. On PCBs without internal planes, copper area can be added on either side of the PCB to dissipate heat. If the copper area is on the opposite side of the PCB from the device, thermal vias are used to transfer the heat between top and bottom layers. For details about how to design the PCB, see TI application reportPowerPAD™ Thermally Enhanced Package SLMA002, and TI application brief SLMA004, PowerPAD™ Made Easy, available at www.ti.com. In general, the more copper area that can be provided, the more power can be dissipated. 10.4 Power Dissipation Power dissipation in the DRV8813 is dominated by the power dissipated in the output FET resistance, or RDS(ON). Average power dissipation when running a stepper motor can be roughly estimated by Equation 3. PTOT 4 u RDS(ON) u IOUT(RMS) 2 where • • • • PTOT is the total power dissipation RDS(ON) is the resistance of each FET IOUT(RMS) is the RMS output current being applied to each winding. IOUT(RMS) is equal to the approximately 0.7× the full-scale output current setting. (3) The factor of 4 comes from the fact that there are two motor windings, and at any instant two FETs are conducting winding current for each winding (one high-side and one low-side). The maximum amount of power that can be dissipated in the device is dependent on ambient temperature and heatsinking. RDS(ON) increases with temperature, so as the device heats, the power dissipation increases. This must be taken into consideration when sizing the heatsink. 18 Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: DRV8813 DRV8813 www.ti.com SLVSA72E – APRIL 2010 – REVISED OCTOBER 2015 11 Device and Documentation Support 11.1 Documentation Support 11.1.1 Related Documentation For related documentation see the following: • PowerPAD™ Thermally Enhanced Package, SLMA002. • PowerPAD™ Made Easy, SLMA004. 11.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 11.3 Trademarks PowerPAD, E2E are trademarks of Texas Instruments. All other trademarks are the property of their respective owners. 11.4 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 11.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: DRV8813 19 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) DRV8813PWP ACTIVE HTSSOP PWP 28 50 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 85 DRV8813 DRV8813PWPR ACTIVE HTSSOP PWP 28 2000 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 85 DRV8813 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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DRV8813PWPR
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    DRV8813PWPR
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    DRV8813PWPR
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    DRV8813PWPR
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    DRV8813PWPR
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    • 1+35.847801+4.30530
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    库存:802