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DRV8825PWPR

DRV8825PWPR

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    HTSSOP28_9.7X4.4MM_EP

  • 描述:

    8.2~45V

  • 数据手册
  • 价格&库存
DRV8825PWPR 数据手册
Sample & Buy Product Folder Support & Community Tools & Software Technical Documents DRV8825 SLVSA73F – APRIL 2010 – REVISED JULY 2014 DRV8825 Stepper Motor Controller IC 1 Features 3 Description • The DRV8825 provides an integrated motor driver solution for printers, scanners, and other automated equipment applications. The device has two H-bridge drivers and a microstepping indexer, and is intended to drive a bipolar stepper motor. The output driver block consists of N-channel power MOSFET’s configured as full H-bridges to drive the motor windings. The DRV8825 is capable of driving up to 2.5 A of current from each output (with proper heat sinking, at 24 V and 25°C). 1 • • • • • • • • PWM Microstepping Stepper Motor Driver – Built-In Microstepping Indexer – Up to 1/32 Microstepping Multiple Decay Modes – Mixed Decay – Slow Decay – Fast Decay 8.2-V to 45-V Operating Supply Voltage Range 2.5-A Maximum Drive Current at 24 V and TA = 25°C Simple STEP/DIR Interface Low Current Sleep Mode Built-In 3.3-V Reference Output Small Package and Footprint Protection Features – Overcurrent Protection (OCP) – Thermal Shutdown (TSD) – VM Undervoltage Lockout (UVLO) – Fault Condition Indication Pin (nFAULT) A simple STEP/DIR interface allows easy interfacing to controller circuits. Mode pins allow for configuration of the motor in full-step up to 1/32-step modes. Decay mode is configurable so that slow decay, fast decay, or mixed decay can be used. A low-power sleep mode is provided which shuts down internal circuitry to achieve very low quiescent current draw. This sleep mode can be set using a dedicated nSLEEP pin. Internal shutdown functions are provided for overcurrent, short circuit, under voltage lockout and over temperature. Fault conditions are indicated via the nFAULT pin. Device Information(1) 2 Applications • • • • • • • • • PART NUMBER Automatic Teller Machines Money Handling Machines Video Security Cameras Printers Scanners Office Automation Machines Gaming Machines Factory Automation Robotics DRV8825 PACKAGE HTSSOP (28) BODY SIZE (NOM) 9.70 mm × 6.40 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. 4 Simplified Schematic Microstepping Current Waveform 8.2 to 45 V Decay Mode Step Size M 2.5 A DIR - Controller DRV8825 + STEP Stepper Motor Driver nFAULT + - 2.5 A 1/32 µstep 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. DRV8825 SLVSA73F – APRIL 2010 – REVISED JULY 2014 www.ti.com Table of Contents 1 2 3 4 5 6 7 8 Features .................................................................. Applications ........................................................... Description ............................................................. Simplified Schematic............................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 1 2 3 4 7.1 7.2 7.3 7.4 7.5 7.6 7.7 4 4 4 5 6 7 8 Absolute Maximum Ratings ...................................... Handling Ratings....................................................... Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Timing Requirements ................................................ Typical Characteristics .............................................. Detailed Description .............................................. 9 8.1 Overview ................................................................... 9 8.2 Functional Block Diagram ....................................... 10 8.3 Feature Description................................................. 11 8.4 Device Functional Modes........................................ 17 9 Application and Implementation ........................ 18 9.1 Application Information............................................ 18 9.2 Typical Application ................................................. 18 10 Power Supply Recommendations ..................... 21 10.1 Bulk Capacitance .................................................. 21 10.2 Power Supply and Logic Sequencing ................... 21 11 Layout................................................................... 22 11.1 Layout Guidelines ................................................. 22 11.2 Layout Example .................................................... 22 11.3 Thermal Protection................................................ 22 12 Device and Documentation Support ................. 24 12.1 Trademarks ........................................................... 24 12.2 Electrostatic Discharge Caution ............................ 24 12.3 Glossary ................................................................ 24 13 Mechanical, Packaging, and Orderable Information ........................................................... 24 5 Revision History Changes from Revision E (August 2013) to Revision F Page • Added new sections and reordered data sheet to fit new TI flow .......................................................................................... 1 • Updated pin descriptions ....................................................................................................................................................... 3 • Added power supply ramp rate and updated ISENSEx pin voltage in Absolute Maximum Ratings ..................................... 4 • Updated VIL voltage minimum and typical in Electrical Characteristics ................................................................................. 6 • Updated IIN and tDEG in Electrical Characteristics .................................................................................................................. 6 2 Submit Documentation Feedback Copyright © 2010–2014, Texas Instruments Incorporated Product Folder Links: DRV8825 DRV8825 www.ti.com SLVSA73F – APRIL 2010 – REVISED JULY 2014 6 Pin Configuration and Functions Pin Functions PIN NAME NO. I/O (1) EXTERNAL COMPONENTS OR CONNECTIONS DESCRIPTION POWER AND GROUND CP1 1 I/O Charge pump flying capacitor CP2 2 I/O Charge pump flying capacitor GND 14, 28 — Device ground VCP 3 I/O High-side gate drive voltage VMA 4 — Bridge A power supply VMB 11 — Bridge B power supply V3P3OUT 15 O 3.3-V regulator output AVREF 12 I Bridge A current set reference input BVREF 13 I Bridge B current set reference input DECAY 19 I Decay mode Low = slow decay, open = mixed decay, high = fast decay. Internal pulldown and pullup. DIR 20 I Direction input Level sets the direction of stepping. Internal pulldown. MODE0 24 I Microstep mode 0 MODE1 25 I Microstep mode 1 MODE2 26 I Microstep mode 2 NC 23 — No connect Leave this pin unconnected. nENBL 21 I Enable input Logic high to disable device outputs and indexer operation, logic low to enable. Internal pulldown. nRESET 16 I Reset input Active-low reset input initializes the indexer logic and disables the H-bridge outputs. Internal pulldown. nSLEEP 17 I Sleep mode input Logic high to enable device, logic low to enter low-power sleep mode. Internal pulldown. STEP 22 I Step input Rising edge causes the indexer to move one step. Internal pulldown. 18 OD Fault Logic low when in fault condition (overtemp, overcurrent) Connect a 0.01-μF 50-V capacitor between CP1 and CP2. Connect a 0.1-μF 16-V ceramic capacitor and a 1-MΩ resistor to VM. Connect to motor supply (8.2 to 45 V). Both pins must be connected to the same supply, bypassed with a 0.1-µF capacitor to GND, and connected to appropriate bulk capacitance. Bypass to GND with a 0.47-μF 6.3-V ceramic capacitor. Can be used to supply VREF. CONTROL Reference voltage for winding current set. Normally AVREF and BVREF are connected to the same voltage. Can be connected to V3P3OUT. MODE0 through MODE2 set the step mode - full, 1/2, 1/4, 1/8/ 1/16, or 1/32 step. Internal pulldown. STATUS nFAULT (1) Directions: I = input, O = output, OD = open-drain output, IO = input/output Submit Documentation Feedback Copyright © 2010–2014, Texas Instruments Incorporated Product Folder Links: DRV8825 3 DRV8825 SLVSA73F – APRIL 2010 – REVISED JULY 2014 www.ti.com Pin Functions (continued) PIN NAME nHOME NO. I/O (1) 27 OD AOUT1 5 AOUT2 EXTERNAL COMPONENTS OR CONNECTIONS DESCRIPTION Home position Logic low when at home state of step table O Bridge A output 1 7 O Bridge A output 2 Connect to bipolar stepper motor winding A. Positive current is AOUT1 → AOUT2 BOUT1 10 O Bridge B output 1 BOUT2 8 O Bridge B output 2 Connect to bipolar stepper motor winding B. Positive current is BOUT1 → BOUT2 ISENA 6 I/O Bridge A ground / Isense Connect to current sense resistor for bridge A. ISENB 9 I/O Bridge B ground / Isense Connect to current sense resistor for bridge B. OUTPUT 7 Specifications 7.1 Absolute Maximum Ratings (1) (2) Power supply voltage V(VMx) MIN MAX –0.3 47 V 1 V/µs 7 V Power supply ramp rate V(xVREF) Digital pin voltage –0.5 Input voltage –0.3 4 V ISENSEx pin voltage (3) –0.8 0.8 V Internally limited A 2.5 A Peak motor drive output current, t < 1 μs Continuous motor drive output current (4) 0 Continuous total power dissipation TJ (1) (2) (3) (4) UNIT See Thermal Information Operating junction temperature range –40 150 °C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to network ground terminal. Transients of ±1 V for less than 25 ns are acceptable Power dissipation and thermal limits must be observed. 7.2 Handling Ratings MIN Tstg Storage temperature range V(ESD) (1) (2) Electrostatic discharge MAX UNIT °C –60 150 Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1) –2000 2000 Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2) –500 500 V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions MIN V(VMx) Motor power supply voltage range (1) V(VREF) IV3P3 (1) (2) 4 NOM MAX UNIT 8.2 45 V VREF input voltage (2) 1 3.5 V V3P3OUT load current 0 1 mA All VM pins must be connected to the same supply voltage. Operational at VREF between 0 to 1 V, but accuracy is degraded. Submit Documentation Feedback Copyright © 2010–2014, Texas Instruments Incorporated Product Folder Links: DRV8825 DRV8825 www.ti.com SLVSA73F – APRIL 2010 – REVISED JULY 2014 7.4 Thermal Information DRV8825 THERMAL METRIC (1) PWP UNIT 28 PINS RθJA Junction-to-ambient thermal resistance (2) (3) 31.6 RθJC(top) Junction-to-case (top) thermal resistance RθJB Junction-to-board thermal resistance (4) 5.6 ψJT Junction-to-top characterization parameter (5) 0.2 ψJB Junction-to-board characterization parameter (6) 5.5 RθJC(bot) Junction-to-case (bottom) thermal resistance (7) 1.4 (1) (2) (3) (4) (5) (6) (7) 15.9 °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2a. The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDECstandard test exists, but a close description can be found in the ANSI SEMI standard G30-88. The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8. The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7). The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7). The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. Spacer Submit Documentation Feedback Copyright © 2010–2014, Texas Instruments Incorporated Product Folder Links: DRV8825 5 DRV8825 SLVSA73F – APRIL 2010 – REVISED JULY 2014 www.ti.com 7.5 Electrical Characteristics over operating free-air temperature range of –40°C to 85°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT POWER SUPPLIES IVM VM operating supply current V(VMx) = 24 V 5 8 mA IVMQ VM sleep mode supply current V(VMx) = 24 V 10 20 μA 3.3 3.4 V 0.7 V 5.25 V V3P3OUT REGULATOR V3P3 V3P3OUT voltage IOUT = 0 to 1 mA 3.2 LOGIC-LEVEL INPUTS VIL Input low voltage 0 VIH Input high voltage 2.2 VHYS Input hysteresis 0.3 IIL Input low current VIN = 0 IIH Input high current VIN = 3.3 V RPD Internal pulldown resistance 0.45 –20 0.6 V 20 μA 100 μA 100 kΩ nHOME, nFAULT OUTPUTS (OPEN-DRAIN OUTPUTS) VOL Output low voltage IO = 5 mA IOH Output high leakage current VO = 3.3 V 0.5 V 1 μA 0.8 V 40 µA DECAY INPUT VIL Input low threshold voltage For slow decay mode VIH Input high threshold voltage For fast decay mode IIN Input current RPU Internal pullup resistance (to 3.3 V) RPD Internal pulldown resistance 2 V –40 130 kΩ 80 kΩ H-BRIDGE FETS HS FET on resistance RDS(ON) LS FET on resistance IOFF V(VMx) = 24 V, IO = 1 A, TJ = 25°C 0.2 V(VMx) = 24 V, IO = 1 A, TJ = 85°C 0.25 V(VMx) = 24 V, IO = 1 A, TJ = 25°C 0.2 V(VMx) = 24 V, IO = 1 A, TJ = 85°C 0.25 Off-state leakage current –20 0.32 Ω 0.32 20 μA MOTOR DRIVER ƒPWM Internal current control PWM frequency tBLANK Current sense blanking time tR Rise time 30 200 ns tF Fall time 30 200 ns 8.2 V 30 kHz μs 4 PROTECTION CIRCUITS VUVLO VM undervoltage lockout voltage IOCP Overcurrent protection trip level tDEG Overcurrent deglitch time tTSD Thermal shutdown temperature V(VMx) rising 7.8 3 A 3 Die temperature 150 –3 160 µs 180 °C 3 μA 685 mV CURRENT CONTROL IREF xVREF input current V(xVREF) = 3.3 V VTRIP xISENSE trip voltage V(xVREF) = 3.3 V, 100% current setting ΔITRIP Current trip accuracy (relative to programmed value) AISENSE Current sense amplifier gain 6 635 660 V(xVREF) = 3.3 V, 5% current setting –25% 25% V(xVREF) = 3.3 V, 10% to 34% current setting –15% 15% V(xVREF) = 3.3 V, 38% to 67% current setting –10% 10% V(xVREF) = 3.3 V, 71% to 100% current setting –5% Reference only Submit Documentation Feedback 5% 5 V/V Copyright © 2010–2014, Texas Instruments Incorporated Product Folder Links: DRV8825 DRV8825 www.ti.com SLVSA73F – APRIL 2010 – REVISED JULY 2014 7.6 Timing Requirements MIN MAX UNIT 250 kHz 1 ƒSTEP Step frequency 2 tWH(STEP) Pulse duration, STEP high 1.9 μs 3 tWL(STEP) Pulse duration, STEP low 1.9 μs 4 tSU(STEP) Setup time, command before STEP rising 650 ns 5 tH(STEP) Hold time, command after STEP rising 650 ns 6 tENBL Enable time, nENBL active to STEP 650 ns 7 tWAKE Wakeup time, nSLEEP inactive high to STEP input accepted 1.7 ms Figure 1. Timing Diagram Submit Documentation Feedback Copyright © 2010–2014, Texas Instruments Incorporated Product Folder Links: DRV8825 7 DRV8825 SLVSA73F – APRIL 2010 – REVISED JULY 2014 www.ti.com 7.7 Typical Characteristics 7 14 6.5 12 IVMQ (PA) IVM (mA) 6 5.5 10 5 8 -40qC 25qC 85qC 125qC 4.5 4 10 15 20 25 30 V(VMx) (V) 35 40 6 10 45 -40qC 25qC 85qC 125qC 15 Figure 2. IVMx vs V(VMx) 35 40 45 D002 750 -40qC 25qC 85qC 125qC 700 RDS(ON) HS + LS (m:) 700 RDS(ON) HS + LS (m:) 25 30 V(VMx) (V) Figure 3. IVMxQ vs V(VMx) 750 650 600 550 500 450 650 600 550 500 8V 24 V 45 V 450 400 8 13 18 23 28 V(VMx) (V) 33 38 400 -50 43 D003 Figure 4. RDS(ON) vs V(VMx) 8 20 D001 -25 0 25 50 TA (qC) 75 100 125 D004 Figure 5. RDS(ON) vs Temperature Submit Documentation Feedback Copyright © 2010–2014, Texas Instruments Incorporated Product Folder Links: DRV8825 DRV8825 www.ti.com SLVSA73F – APRIL 2010 – REVISED JULY 2014 8 Detailed Description 8.1 Overview The DRV8825 is an integrated motor driver solution for bipolar stepper motors. The device integrates two NMOS H-bridges, current sense, regulation circuitry, and a microstepping indexer. The DRV8825 can be powered with a supply voltage between 8.2 and 45 V and is capable of providing an output current up to 2.5 A full-scale. A simple STEP/DIR interface allows for easy interfacing to the controller circuit. The internal indexer is able to execute high-accuracy microstepping without requiring the processor to control the current level. The current regulation is highly configurable, with three decay modes of operation. Depending on the application requirements, the user can select fast, slow, and mixed decay. A low-power sleep mode is included which allows the system to save power when not driving the motor. Submit Documentation Feedback Copyright © 2010–2014, Texas Instruments Incorporated Product Folder Links: DRV8825 9 DRV8825 SLVSA73F – APRIL 2010 – REVISED JULY 2014 www.ti.com 8.2 Functional Block Diagram VM 3.3 V LS Gate Drive V3P3OUT CP1 Internal VCC V3P3OUT Charge Pump Low Side Gate Drive CP2 HS Gate Drive VM VCP 3.3 V VM AVREF VM BVREF VMA + nENBL AOUT1 + STEP Stepper Motor Motor Driver A AOUT2 DIR ± + ± DECAY ISENA MODE0 MODE1 Control Logic/Indexer VM VMB MODE2 nRESET BOUT1 Motor Driver B nSLEEP BOUT2 nHOME Thermal Shut Down nFAULT GND 10 PPAD ISENB GND Submit Documentation Feedback Copyright © 2010–2014, Texas Instruments Incorporated Product Folder Links: DRV8825 DRV8825 www.ti.com SLVSA73F – APRIL 2010 – REVISED JULY 2014 8.3 Feature Description 8.3.1 PWM Motor Drivers The DRV8825 contains two H-bridge motor drivers with current-control PWM circuitry. Figure 6 shows a block diagram of the motor control circuitry. Figure 6. Motor Control Circuitry Note that there are multiple VM motor power supply pins. All VM pins must be connected together to the motor supply voltage. Submit Documentation Feedback Copyright © 2010–2014, Texas Instruments Incorporated Product Folder Links: DRV8825 11 DRV8825 SLVSA73F – APRIL 2010 – REVISED JULY 2014 www.ti.com Feature Description (continued) 8.3.2 Current Regulation The current through the motor windings is regulated by a fixed-frequency PWM current regulation, or current chopping. When an H-bridge is enabled, current rises through the winding at a rate dependent on the DC voltage and inductance of the winding. Once the current hits the current chopping threshold, the bridge disables the current until the beginning of the next PWM cycle. In stepping motors, current regulation is used to vary the current in the two windings in a semi-sinusoidal fashion to provide smooth motion. The PWM chopping current is set by a comparator which compares the voltage across a current sense resistor connected to the xISEN pins, multiplied by a factor of 5, with a reference voltage. The reference voltage is input from the xVREF pins. The full-scale (100%) chopping current is calculated in Equation 1. V(xREF) ICHOP 5 u RISENSE (1) Example: If a 0.25-Ω sense resistor is used and the VREFx pin is 2.5 V, the full-scale (100%) chopping current will be 2.5 V / (5 x 0.25 Ω) = 2 A. The reference voltage is scaled by an internal DAC that allows fractional stepping of a bipolar stepper motor, as described in the microstepping indexer section below. 8.3.3 Decay Mode During PWM current chopping, the H-bridge is enabled to drive current through the motor winding until the PWM current chopping threshold is reached. This is shown in Figure 7 as case 1. The current flow direction shown indicates positive current flow. Once the chopping current threshold is reached, the H-bridge can operate in two different states, fast decay or slow decay. In fast decay mode, once the PWM chopping current level has been reached, the H-bridge reverses state to allow winding current to flow in a reverse direction. As the winding current approaches 0, the bridge is disabled to prevent any reverse current flow. Fast decay mode is shown in Figure 7 as case 2. In slow decay mode, winding current is recirculated by enabling both of the low-side FETs in the bridge. This is shown in Figure 7 as case 3. 12 Submit Documentation Feedback Copyright © 2010–2014, Texas Instruments Incorporated Product Folder Links: DRV8825 DRV8825 www.ti.com SLVSA73F – APRIL 2010 – REVISED JULY 2014 Feature Description (continued) Figure 7. Decay Mode The DRV8825 supports fast decay, slow decay and a mixed decay mode. Slow, fast, or mixed decay mode is selected by the state of the DECAY pin; logic low selects slow decay, open selects mixed decay operation, and logic high sets fast decay mode. The DECAY pin has both an internal pullup resistor of approximately 130 kΩ and an internal pulldown resistor of approximately 80 kΩ. This sets the mixed decay mode if the pin is left open or undriven. Mixed decay mode begins as fast decay, but at a fixed period of time (75% of the PWM cycle) switches to slow decay mode for the remainder of the fixed PWM period. This occurs only if the current through the winding is decreasing (per the indexer step table); if the current is increasing, then slow decay is used. 8.3.4 Blanking Time After the current is enabled in an H-bridge, the voltage on the xISEN pin is ignored for a fixed period of time before enabling the current sense circuitry. This blanking time is fixed at 3.75 μs. Note that the blanking time also sets the minimum on time of the PWM. 8.3.5 Microstepping Indexer Built-in indexer logic in the DRV8825 allows a number of different stepping configurations. The MODE0 through MODE2 pins are used to configure the stepping format as shown in Table 1. Table 1. Stepping Format MODE2 MODE1 MODE0 0 0 0 Full step (2-phase excitation) with 71% current STEP MODE 0 0 1 1/2 step (1-2 phase excitation) 0 1 0 1/4 step (W1-2 phase excitation) 0 1 1 8 microsteps/step 1 0 0 16 microsteps/step 1 0 1 32 microsteps/step 1 1 0 32 microsteps/step 1 1 1 32 microsteps/step Submit Documentation Feedback Copyright © 2010–2014, Texas Instruments Incorporated Product Folder Links: DRV8825 13 DRV8825 SLVSA73F – APRIL 2010 – REVISED JULY 2014 www.ti.com Table 2 shows the relative current and step directions for different settings of MODEx. At each rising edge of the STEP input, the indexer travels to the next state in the table. The direction is shown with the DIR pin high; if the DIR pin is low the sequence is reversed. Positive current is defined as xOUT1 = positive with respect to xOUT2. Note that if the step mode is changed while stepping, the indexer will advance to the next valid state for the new MODEx setting at the rising edge of STEP. The home state is 45°. This state is entered at power-up or application of nRESET. This is shown in Table 2 by the shaded cells. The logic inputs DIR, STEP, nRESET, and MODEx have internal pulldown resistors of 100 kΩ. Table 2. Relative Current and Step Directions 1/32 STEP 1/16 STEP 1 1 1/8 STEP 1/4 STEP 1/2 STEP 1 1 1 FULL STEP 70% 2 3 2 4 5 3 2 6 7 4 8 9 5 3 2 10 11 6 12 13 7 4 14 15 8 16 17 9 5 3 2 1 18 19 10 20 21 11 6 22 23 12 24 25 13 7 4 26 27 14 28 29 15 8 30 31 16 32 33 17 9 5 3 34 35 18 36 37 19 10 38 39 14 20 Submit Documentation Feedback WINDING CURRENT A WINDING CURRENT B ELECTRICAL ANGLE 100% 0% 0 100% 5% 3 100% 10% 6 99% 15% 8 98% 20% 11 97% 24% 14 96% 29% 17 94% 34% 20 92% 38% 23 90% 43% 25 88% 47% 28 86% 51% 31 83% 56% 34 80% 60% 37 77% 63% 39 74% 67% 42 71% 71% 45 67% 74% 48 63% 77% 51 60% 80% 53 56% 83% 56 51% 86% 59 47% 88% 62 43% 90% 65 38% 92% 68 34% 94% 70 29% 96% 73 24% 97% 76 20% 98% 79 15% 99% 82 10% 100% 84 5% 100% 87 0% 100% 90 –5% 100% 93 –10% 100% 96 –15% 99% 98 –20% 98% 101 –24% 97% 104 –29% 96% 107 Copyright © 2010–2014, Texas Instruments Incorporated Product Folder Links: DRV8825 DRV8825 www.ti.com SLVSA73F – APRIL 2010 – REVISED JULY 2014 Table 2. Relative Current and Step Directions (continued) 1/32 STEP 1/16 STEP 1/8 STEP 1/4 STEP 11 6 1/2 STEP FULL STEP 70% 40 41 21 42 43 22 44 45 23 12 46 47 24 48 49 25 13 7 4 2 50 51 26 52 53 27 14 54 55 28 56 57 29 15 8 58 59 30 60 61 31 16 62 63 32 64 65 33 17 9 5 66 67 34 68 69 35 18 70 71 36 72 73 37 19 10 74 75 38 76 77 39 20 78 79 40 80 81 41 21 11 6 3 82 83 42 84 85 43 22 86 WINDING CURRENT A WINDING CURRENT B ELECTRICAL ANGLE –34% 94% 110 –38% 92% 113 –43% 90% 115 –47% 88% 118 –51% 86% 121 –56% 83% 124 –60% 80% 127 –63% 77% 129 –67% 74% 132 –71% 71% 135 –74% 67% 138 –77% 63% 141 –80% 60% 143 –83% 56% 146 –86% 51% 149 –88% 47% 152 –90% 43% 155 –92% 38% 158 –94% 34% 160 –96% 29% 163 –97% 24% 166 –98% 20% 169 –99% 15% 172 –100% 10% 174 –100% 5% 177 –100% 0% 180 –100% –5% 183 –100% –10% 186 –99% –15% 188 –98% –20% 191 –97% –24% 194 –96% –29% 197 –94% –34% 200 –92% –38% 203 –90% –43% 205 –88% –47% 208 –86% –51% 211 –83% –56% 214 –80% –60% 217 –77% –63% 219 –74% –67% 222 –71% –71% 225 –67% –74% 228 –63% –77% 231 –60% –80% 233 –56% –83% 236 –51% –86% 239 Submit Documentation Feedback Copyright © 2010–2014, Texas Instruments Incorporated Product Folder Links: DRV8825 15 DRV8825 SLVSA73F – APRIL 2010 – REVISED JULY 2014 www.ti.com Table 2. Relative Current and Step Directions (continued) 1/32 STEP 1/16 STEP 87 1/8 STEP 1/4 STEP 1/2 STEP FULL STEP 70% 44 88 89 45 23 12 90 91 46 92 93 47 24 94 95 48 96 97 49 25 13 7 98 99 50 100 101 51 26 102 103 52 104 105 53 27 14 106 107 54 108 109 55 28 110 111 56 112 113 57 29 15 8 4 114 115 58 116 117 59 30 118 119 60 120 121 61 31 16 122 123 62 124 125 63 32 126 127 64 128 16 Submit Documentation Feedback WINDING CURRENT A WINDING CURRENT B ELECTRICAL ANGLE –47% –88% 242 –43% –90% 245 –38% –92% 248 –34% –94% 250 –29% –96% 253 –24% –97% 256 –20% –98% 259 –15% –99% 262 –10% –100% 264 –5% –100% 267 0% –100% 270 5% –100% 273 10% –100% 276 15% –99% 278 20% –98% 281 24% –97% 284 29% –96% 287 34% –94% 290 38% –92% 293 43% –90% 295 47% –88% 298 51% –86% 301 56% –83% 304 60% –80% 307 63% –77% 309 67% –74% 312 71% –71% 315 74% –67% 318 77% –63% 321 80% –60% 323 83% –56% 326 86% –51% 329 88% –47% 332 90% –43% 335 92% –38% 338 94% –34% 340 96% –29% 343 97% –24% 346 98% –20% 349 99% –15% 352 100% –10% 354 100% –5% 357 Copyright © 2010–2014, Texas Instruments Incorporated Product Folder Links: DRV8825 DRV8825 www.ti.com SLVSA73F – APRIL 2010 – REVISED JULY 2014 8.3.6 nRESET, nENBL, and nSLEEP Operation The nRESET pin, when driven active low, resets internal logic, and resets the step table to the home position. It also disables the H-bridge drivers. The STEP input is ignored while nRESET is active. The nENBL pin is used to control the output drivers and enable/disable operation of the indexer. When nENBL is low, the output H-bridges are enabled, and rising edges on the STEP pin are recognized. When nENBL is high, the H-bridges are disabled, the outputs are in a high-impedance state, and the STEP input is ignored. Driving nSLEEP low will put the device into a low power sleep state. In this state, the H-bridges are disabled, the gate drive charge pump is stopped, the V3P3OUT regulator is disabled, and all internal clocks are stopped. In this state all inputs are ignored until nSLEEP returns inactive high. When returning from sleep mode, some time (approximately 1 ms) needs to pass before applying a STEP input, to allow the internal circuitry to stabilize. Note that nRESET and nENABL have internal pulldown resistors of approximately 100 kΩ. The nSLEEP pin has an internal pulldown resistor of 1 MΩ. nSLEEP and nRESET signals need to be driven to logic high for device operation. 8.3.7 Protection Circuits The DRV8825 is fully protected against undervoltage, overcurrent, and overtemperature events. 8.3.7.1 Overcurrent Protection (OCP) An analog current limit circuit on each FET limits the current through the FET by removing the gate drive. If this analog current limit persists for longer than the OCP time, all FETs in the H-bridge will be disabled and the nFAULT pin will be driven low. The device remains disabled until either nRESET pin is applied, or VM is removed and reapplied. Overcurrent conditions on both high-side and low-side devices; that is, a short to ground, supply, or across the motor winding all result in an overcurrent shutdown. Note that overcurrent protection does not use the current sense circuitry used for PWM current control, and is independent of the ISENSE resistor value or xVREF voltage. 8.3.7.2 Thermal Shutdown (TSD) If the die temperature exceeds safe limits, all FETs in the H-bridge will be disabled and the nFAULT pin will be driven low. After the die temperature has fallen to a safe level, operation automatically resumes. 8.3.7.3 Undervoltage Lockout (UVLO) If at any time the voltage on the VM pins falls below the UVLO threshold voltage, all circuitry in the device will be disabled and internal logic will be reset. Operation will resume when V(VMx) rises above the UVLO threshold. 8.4 Device Functional Modes 8.4.1 STEP/DIR Interface The STEP/DIR interface provides a simple method for advancing through the indexer table. For each rising edge on the STEP pin, the indexer travels to the next state in the table. The direction it moves in the table is determined by the input to the DIR pin. The signals applied to the STEP and DIR pins should not violate the timing diagram specified in Figure 1. 8.4.2 Microstepping The microstepping indexer allows for a variety of stepping configurations. The state of the indexer is determined by the configuration of the three MODE pins (refer to Table 1 for configuration options). The DRV8825 supports full step up to 1/32 microstepping. Submit Documentation Feedback Copyright © 2010–2014, Texas Instruments Incorporated Product Folder Links: DRV8825 17 DRV8825 SLVSA73F – APRIL 2010 – REVISED JULY 2014 www.ti.com 9 Application and Implementation 9.1 Application Information The DRV8825 is used in bipolar stepper control. The microstepping motor driver provides additional precision and a smooth rotation from the stepper motor. The following design is a common application of the DRV8825. 9.2 Typical Application DRV8825 V3P3OUT CP1 GND CP2 nHOME VCP MODE2 VMA MODE1 AOUT1 MODE0 10 kŸ 0.01 µF 1 MŸ 0.1 µF + 0.1 µF 200 mŸ Stepper Motor ISENA ± VM 100 µF + + NC AOUT2 STEP BOUT2 nENBL ± 200 mŸ ISENB DIR V3P3OUT BOUT1 DECAY VMB nFAULT AVREF nSLEEP BVREF nRESET 10 kŸ 0.1 µF V3P3OUT 30 kŸ GND PPAD 50 kŸ V3P3OUT V3P3OUT 0.47 µF 9.2.1 Design Requirements Design Parameter Reference Example Value Supply Voltage VM 24 V Motor Winding Resistance RL 3.9 Ω Motor Winding Inductance IL 2.9 mH Motor Full Step Angle Target Microstepping Level Target Motor Speed Target Full-Scale Current θstep 1.8°/step nm 8 µsteps per step v 120 rpm IFS 1.25 A 9.2.2 Detailed Design Procedure 9.2.2.1 Stepper Motor Speed The first step in configuring the DRV8825 requires the desired motor speed and microstepping level. If the target application requires a constant speed, then a square wave with frequency ƒstep must be applied to the STEP pin. 18 Submit Documentation Feedback Copyright © 2010–2014, Texas Instruments Incorporated Product Folder Links: DRV8825 DRV8825 www.ti.com SLVSA73F – APRIL 2010 – REVISED JULY 2014 If the target motor startup speed is too high, the motor will not spin. Make sure that the motor can support the target speed or implement an acceleration profile to bring the motor up to speed. For a desired motor speed (v), microstepping level (nm), and motor full step angle (θstep), SPACE ¦step —VWHSV  VHF RQG § µsteps · q § rotations · § · u 360 ¨ u nm ¨ v¨ ¸ ¸ ¸ © minute ¹ © rotation ¹ © step ¹ § q · § sec onds · 60 ¨ ¸ u Tstep ¨ step ¸ © minute ¹ © ¹ (2) § µsteps · q § rotations · § · 120 ¨ ¸ u 360 ¨ rotation ¸ u 8 ¨ step ¸ © minute ¹ © ¹ © ¹ § q · § sec onds · 60 ¨ ¸ u 1.8 ¨ step ¸ © minute ¹ © ¹ (3) SPACE ¦step —VWHSV  VHF RQG θstep can be found in the stepper motor data sheet or written on the motor itself. For the DRV8825, the microstepping level is set by the MODE pins and can be any of the settings in Table 1. Higher microstepping will mean a smoother motor motion and less audible noise, but will increase switching losses and require a higher ƒstep to achieve the same motor speed. 9.2.2.2 Current Regulation In a stepper motor, the set full-scale current (IFS) is the maximum current driven through either winding. This quantity depends on the xVREF analog voltage and the sense resistor value (RSENSE). During stepping, IFS defines the current chopping threshold (ITRIP) for the maximum current step. The gain of DRV8825 is set for 5 V/V. xVREF(V) xVREF(V) IFS (A) A v u RSENSE (:) 5 u RSENSE (:) (4) To achieve IFS = 1.25 A with RSENSE of 0.2 Ω, xVREF should be 1.25 V. 9.2.2.3 Decay Modes The DRV8825 supports three different decay modes: slow decay, fast decay, and mixed decay. The current through the motor windings is regulated using a fixed-frequency PWM scheme. This means that after any drive phase, when a motor winding current has hit the current chopping threshold (ITRIP), the DRV8825 will place the winding in one of the three decay modes until the PWM cycle has expired. Afterward, a new drive phase starts. The blanking time, tBLANK, defines the minimum drive time for the current chopping. ITRIP is ignored during tBLANK, so the winding current may overshoot the trip level. Submit Documentation Feedback Copyright © 2010–2014, Texas Instruments Incorporated Product Folder Links: DRV8825 19 DRV8825 SLVSA73F – APRIL 2010 – REVISED JULY 2014 www.ti.com 9.2.3 Application Curves Figure 8. Microstepping Current (Phase A) vs STEP Input, Mixed Decay Figure 9. Microstepping Current (Phase A) vs STEP Input, Slow Decay on Increasing Steps Figure 10. Microstepping Current (Phase A) vs STEP Input, Mixed Decay on Decreasing Steps 20 Submit Documentation Feedback Copyright © 2010–2014, Texas Instruments Incorporated Product Folder Links: DRV8825 DRV8825 www.ti.com SLVSA73F – APRIL 2010 – REVISED JULY 2014 10 Power Supply Recommendations The DRV8825 is designed to operate from an input voltage supply (VMx) range between 8.2 and 45 V. Two 0.1-µF ceramic capacitors rated for VMx must be placed as close as possible to the VMA and VMB pins respectively (one on each pin). In addition to the local decoupling caps, additional bulk capacitance is required and must be sized accordingly to the application requirements. 10.1 Bulk Capacitance Bulk capacitance sizing is an important factor in motor drive system design. It is dependent on a variety of factors including: • Type of power supply • Acceptable supply voltage ripple • Parasitic inductance in the power supply wiring • Type of motor (brushed DC, brushless DC, stepper) • Motor startup current • Motor braking method The inductance between the power supply and motor drive system will limit the rate current can change from the power supply. If the local bulk capacitance is too small, the system will respond to excessive current demands or dumps from the motor with a change in voltage. You should size the bulk capacitance to meet acceptable voltage ripple levels. The data sheet generally provides a recommended value but system level testing is required to determine the appropriate sized bulk capacitor. Power Supply Parasitic Wire Inductance Motor Drive System VM + ± + Motor Driver GND Local Bulk Capacitor IC Bypass Capacitor Figure 11. Setup of Motor Drive System With External Power Supply 10.2 Power Supply and Logic Sequencing There is no specific sequence for powering-up the DRV8825. It is okay for digital input signals to be present before VMx is applied. After VMx is applied to the DRV8825, it begins operation based on the status of the control pins. Submit Documentation Feedback Copyright © 2010–2014, Texas Instruments Incorporated Product Folder Links: DRV8825 21 DRV8825 SLVSA73F – APRIL 2010 – REVISED JULY 2014 www.ti.com 11 Layout 11.1 Layout Guidelines The VMA and VMB pins should be bypassed to GND using low-ESR ceramic bypass capacitors with a recommended value of 0.1-μF rated for VMx. This capacitor should be placed as close to the VMA and VMB pins as possible with a thick trace or ground plane connection to the device GND pin. The VMA and VMB pins must be bypassed to ground using an appropriate bulk capacitor. This component may be an electrolytic and should be located close to the DRV8825. A low-ESR ceramic capacitor must be placed in between the CPL and CPH pins. TI recommends a value of 0.01-μF rated for VMx. Place this component as close to the pins as possible. A low-ESR ceramic capacitor must be placed in between the VMA and VCP pins. TI recommends a value of 0.1μF rated for 16 V. Place this component as close to the pins as possible. Also, place a 1-MΩ resistor between VCP and VMA. Bypass V3P3 to ground with a ceramic capacitor rated 6.3 V. Place this bypass capacitor as close to the pin as possible 11.2 Layout Example 0.1 µF 1 MŸ CP1 GND CP2 nHOME 0.01 µF VCP MODE2 VMA MODE1 AOUT1 MODE0 0.1 µF RISENA RISENB ISENA NC AOUT2 STEP BOUT2 nENBL ISENB DIR BOUT1 DECAY VMB nFAULT AVREF nSLEEP + 0.1 µF BVREF nRESET GND V3P3OUT 0.47 µF 11.3 Thermal Protection The DRV8825 has thermal shutdown (TSD) as described above. If the die temperature exceeds approximately 150°C, the device will be disabled until the temperature drops to a safe level. Any tendency of the device to enter TSD is an indication of either excessive power dissipation, insufficient heatsinking, or too high an ambient temperature. 11.3.1 Power Dissipation Power dissipation in the DRV8825 is dominated by the power dissipated in the output FET resistance, or RDS(ON). Average power dissipation when running a stepper motor can be roughly estimated by Equation 5. 22 Submit Documentation Feedback Copyright © 2010–2014, Texas Instruments Incorporated Product Folder Links: DRV8825 DRV8825 www.ti.com SLVSA73F – APRIL 2010 – REVISED JULY 2014 Thermal Protection (continued) PTOT 4 u RDS(ON) u IOUT(RMS) 2 (5) where PTOT is the total power dissipation, RDS(ON) is the resistance of each FET, and IOUT(RMS) is the RMS output current being applied to each winding. IOUT(RMS) is equal to the approximately 0.7x the full-scale output current setting. The factor of 4 comes from the fact that there are two motor windings, and at any instant two FETs are conducting winding current for each winding (one high-side and one low-side). The maximum amount of power that can be dissipated in the device is dependent on ambient temperature and heatsinking. Note that RDS(ON) increases with temperature, so as the device heats, the power dissipation increases. This must be taken into consideration when sizing the heatsink. 11.3.2 Heatsinking The PowerPAD™ package uses an exposed pad to remove heat from the device. For proper operation, this pad must be thermally connected to copper on the PCB to dissipate heat. On a multi-layer PCB with a ground plane, this can be accomplished by adding a number of vias to connect the thermal pad to the ground plane. On PCBs without internal planes, copper area can be added on either side of the PCB to dissipate heat. If the copper area is on the opposite side of the PCB from the device, thermal vias are used to transfer the heat between top and bottom layers. For details about how to design the PCB, refer to TI application report SLMA002, "PowerPAD™ Thermally Enhanced Package" and TI application brief SLMA004, PowerPAD™ Made Easy, available at www.ti.com. In general, the more copper area that can be provided, the more power can be dissipated. It can be seen that the heatsink effectiveness increases rapidly to about 20 cm2, then levels off somewhat for larger areas. Submit Documentation Feedback Copyright © 2010–2014, Texas Instruments Incorporated Product Folder Links: DRV8825 23 DRV8825 SLVSA73F – APRIL 2010 – REVISED JULY 2014 www.ti.com 12 Device and Documentation Support 12.1 Trademarks PowerPAD is a trademark of Texas Instruments. 12.2 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 12.3 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 24 Submit Documentation Feedback Copyright © 2010–2014, Texas Instruments Incorporated Product Folder Links: DRV8825 PACKAGE OPTION ADDENDUM www.ti.com 12-Jun-2014 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) DRV8825PWP ACTIVE HTSSOP PWP 28 50 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR -40 to 85 DRV8825 DRV8825PWPR ACTIVE HTSSOP PWP 28 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR -40 to 85 DRV8825 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 12-Jun-2014 In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 26-Feb-2019 TAPE AND REEL INFORMATION *All dimensions are nominal Device DRV8825PWPR Package Package Pins Type Drawing SPQ HTSSOP 2000 PWP 28 Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 330.0 16.4 Pack Materials-Page 1 6.9 B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 10.2 1.8 12.0 16.0 Q1 PACKAGE MATERIALS INFORMATION www.ti.com 26-Feb-2019 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) DRV8825PWPR HTSSOP PWP 28 2000 350.0 350.0 43.0 Pack Materials-Page 2 GENERIC PACKAGE VIEW PWP 28 TM PowerPAD TSSOP - 1.2 mm max height SMALL OUTLINE PACKAGE 4.4 x 9.7, 0.65 mm pitch Images above are just a representation of the package family, actual package may vary. Refer to the product data sheet for package details. 4224765/A www.ti.com PACKAGE OUTLINE PWP0028C TM PowerPAD TSSOP - 1.2 mm max height SCALE 2.000 SMALL OUTLINE PACKAGE C 6.6 TYP 6.2 A 0.1 C PIN 1 INDEX AREA SEATING PLANE 26X 0.65 28 1 2X 9.8 9.6 NOTE 3 8.45 14 15 B 0.30 0.19 0.1 C A B 28X 4.5 4.3 SEE DETAIL A (0.15) TYP 2X 0.95 MAX NOTE 5 14 15 2X 0.2 MAX NOTE 5 0.25 GAGE PLANE 1.2 MAX 5.18 4.48 THERMAL PAD 0 -8 0.15 0.05 0.75 0.50 DETAIL A A 20 TYPICAL 28 1 3.1 2.4 4223582/A 03/2017 PowerPAD is a trademark of Texas Instruments. NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed 0.15 mm per side. 4. Reference JEDEC registration MO-153. 5. Features may differ or may not be present. www.ti.com EXAMPLE BOARD LAYOUT PWP0028C TM PowerPAD TSSOP - 1.2 mm max height SMALL OUTLINE PACKAGE (3.4) NOTE 9 (3.1) METAL COVERED BY SOLDER MASK SYMM 28X (1.5) 1 28X (0.45) 28 SEE DETAILS (R0.05) TYP (5.18) 26X (0.65) (0.6) SYMM (9.7) NOTE 9 SOLDER MASK DEFINED PAD (1.2) TYP ( 0.2) TYP VIA 15 14 (1.2) TYP (5.8) LAND PATTERN EXAMPLE EXPOSED METAL SHOWN SCALE: 8X SOLDER MASK OPENING METAL UNDER SOLDER MASK METAL SOLDER MASK OPENING EXPOSED METAL EXPOSED METAL 0.05 MAX ALL AROUND NON-SOLDER MASK DEFINED (PREFERRED) 0.05 MIN ALL AROUND SOLDER MASK DEFINED SOLDER MASK DETAILS 15.000 4223582/A 03/2017 NOTES: (continued) 6. Publication IPC-7351 may have alternate designs. 7. Solder mask tolerances between and around signal pads can vary based on board fabrication site. 8. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature numbers SLMA002 (www.ti.com/lit/slma002) and SLMA004 (www.ti.com/lit/slma004). 9. Size of metal pad may vary due to creepage requirement. 10. Vias are optional depending on application, refer to device data sheet. It is recommended that vias under paste be filled, plugged or tented. www.ti.com EXAMPLE STENCIL DESIGN PWP0028C TM PowerPAD TSSOP - 1.2 mm max height SMALL OUTLINE PACKAGE (3.1) BASED ON 0.125 THICK STENCIL 28X (1.5) METAL COVERED BY SOLDER MASK 1 28 28X (0.45) (R0.05) TYP 26X (0.65) (5.18) BASED ON 0.125 THICK STENCIL SYMM 15 14 SYMM (5.8) SEE TABLE FOR DIFFERENT OPENINGS FOR OTHER STENCIL THICKNESSES SOLDER PASTE EXAMPLE BASED ON 0.125 mm THICK STENCIL SCALE: 8X STENCIL THICKNESS SOLDER STENCIL OPENING 0.1 0.125 0.15 0.175 3.47 X 5.79 3.10 X 5.18 (SHOWN) 2.83 X 4.73 2.62 X 4.38 4223582/A 03/2017 NOTES: (continued) 11. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. 12. Board assembly site may have different recommendations for stencil design. www.ti.com IMPORTANT NOTICE AND DISCLAIMER TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS. These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable standards, and any other safety, security, or other requirements. These resources are subject to change without notice. TI grants you permission to use these resources only for development of an application that uses the TI products described in the resource. Other reproduction and display of these resources is prohibited. No license is granted to any other TI intellectual property right or to any third party intellectual property right. TI disclaims responsibility for, and you will fully indemnify TI and its representatives against, any claims, damages, costs, losses, and liabilities arising out of your use of these resources. TI’s products are provided subject to TI’s Terms of Sale (www.ti.com/legal/termsofsale.html) or other applicable terms available either on ti.com or provided in conjunction with such TI products. TI’s provision of these resources does not expand or otherwise alter TI’s applicable warranties or warranty disclaimers for TI products. 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DRV8825PWPR
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    DRV8825PWPR
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