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DRV8850
SLVSCC0C – NOVEMBER 2013 – REVISED JULY 2016
DRV8850 Low-Voltage H-Bridge IC With LDO Voltage Regulator
1 Features
3 Description
•
The DRV8850 device provides a motor driver plus
LDO voltage regulator solution for consumer
products, toys, and other low-voltage or batterypowered motion-control applications. The device has
one H-bridge driver to drive a DC motor, a voice-coil
actuator, one winding of a stepper motor, a solenoid,
or other devices. The output driver block consists of
N-channel power MOSFETs configured as an Hbridge to drive the load. An internal charge pump
generates the needed gate-drive voltages.
1
•
•
•
•
•
•
•
H-Bridge Motor Driver
– Drives a DC Motor, One Winding of a Stepper
Motor, or Other Loads
– Low MOSFET On-Resistance: 65 mΩ HS + LS
at 4.2V, 25°C
5-A Continuous 8-A Peak-Drive Current
Internal Current Sensing With Current Sense
Output
2 to 5.5-V Operating Supply Voltage Range
Overvoltage and Undervoltage Lockout
Low-Power Sleep Mode
100-mA Isolated Low-Dropout (LDO) Voltage
Regulator
24-Pin VQFN Package
2 Applications
•
Battery-Operated Applications With High Start-Up
Torque, such as:
– Personal Hygiene (Electric Toothbrushes,
Shavers)
– Toys
– RC Helicopters and Cars
– Robotics
The DRV8850 device supplies up to 5 A of
continuous output current (with proper PCB heat
sinking) and up to 8-A peak current. It operates on a
supply voltage from 2 V to 5.5 V.
A low-dropout linear voltage regulator is integrated
with the motor driver to supply power to
microcontrollers or other circuits. The LDO voltage
regulator can be active in device sleep mode, so that
the driver may be shut down without removing power
to any devices powered by the LDO voltage
regulator.
Internal shutdown functions provide overcurrent, short
circuit, undervoltage, overvoltage, and
overtemperature protection. In addition, the device
also has built-in current sensing for accurate current
measurement.
The DRV8850 device is packaged in a 24-pin VQFN
(3.5-mm × 5.5-mm) package (Eco-friendly: RoHS and
no Sb/Br).
Device Information(1)
PART NUMBER
DRV8850
PACKAGE
VQFN (24)
BODY SIZE (NOM)
5.50 mm × 3.50 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
2V to 5.5V
4
INx
LDOEN
Controller
DRV8850
Low-Voltage
H-Bridge IC
BDC
nSLEEP
LDOOUT
5A
Fault
Protection
Low Power
Sleep Mode
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
DRV8850
SLVSCC0C – NOVEMBER 2013 – REVISED JULY 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
4
4
4
4
5
6
7
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Timing Requirements ................................................
Typical Characteristics ..............................................
Detailed Description ............................................ 10
7.1
7.2
7.3
7.4
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
10
11
12
17
8
Application and Implementation ........................ 18
8.1 Application Information............................................ 18
8.2 Typical Application ................................................. 18
9
Power Supply Recommendations...................... 20
9.1 Bulk Capacitance .................................................... 20
10 Layout................................................................... 20
10.1 Layout Guidelines ................................................. 20
10.2 Layout Example .................................................... 21
10.3 Thermal Considerations ........................................ 21
11 Device and Documentation Support ................. 22
11.1
11.2
11.3
11.4
11.5
11.6
Documentation Support ........................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
22
22
22
22
22
22
12 Mechanical, Packaging, and Orderable
Information ........................................................... 22
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (December 2015) to Revision C
Page
•
Updated the RDS(ON) value and added the condition on the front page Features section .................................................. 1
•
Added maximum values for the HS and LS FET on resistance parameters (at TA = 25°C, 85°C) in the Electrical
Characteristics table ............................................................................................................................................................... 5
•
Added the Documentation Support and Receiving Notification of Documentation Updates sections ................................. 22
Changes from Revision A (January 2014) to Revision B
Page
•
Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
•
Removed HTSSOP package. ................................................................................................................................................ 1
Changes from Original (November 2013) to Revision A
•
2
Page
Removed product preview banner.......................................................................................................................................... 1
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SLVSCC0C – NOVEMBER 2013 – REVISED JULY 2016
5 Pin Configuration and Functions
GND
GND
1
24
RGY Package
24-Pin VQFN With Exposed Thermal Pad
Top View
OUT1 2
OUT1 3
OUT1 4
IN1H 5
IN1L 6
IN2H 7
IN2L 8
nSLEEP 9
LDOEN 10
SR 11
23
22
21
20
GND
1
(Thermal
Pad)
19
18
17
16
15
14
OUT2
OUT2
OUT2
VCC
VCC
VCC
VCP
VPROPI
LDOOUT
LDOFB
12
13
GND
GND
Pin Functions
PIN
NAME
NO.
I/O (1)
DESCRIPTION
EXTERNAL COMPONENTS OR CONNECTIONS
POWER AND GROUND
GND
LDOOUT
1, 12, 13, 24,
Thermal pad
—
Device ground
15
—
LDO regulator output
Bypass to GND with a 2.2-μF 6.3-V ceramic capacitor
VCC
21, 22, 23
—
Device supply
Bypass to GND with 0.1-μF and 10-μF 6.3-V ceramic capacitors
VCP
17
—
Charge pump
Connect a 0.1-μF 6.3-V ceramic capacitor to VCC
IN1H
5
I
Input 1 HS FET enable
Active high enables HS FET for output 1
Internal pulldown resistor
IN1L
6
I
Input 1 LS FET enable
Active high enables LS FET for output 1
Internal pulldown resistor
IN2H
7
I
Input 2 HS FET enable
Active high enables HS FET for output 2
Internal pulldown resistor
IN2L
8
I
Input 2 LS FET enable
Active high enables LS FET for output 2
Internal pulldown resistor
LDOEN
10
I
LDO regulator enable
Logic low disables LDO regulator
Logic high enables LDO regulator
Internal pulldown resistor
LDOFB
14
I
LDO regulator feedback
Resistor divider from LDOOUT sets LDO output voltage
May be connected to LDOIN to enable LDO
nSLEEP
9
I
Sleep mode input
Logic low puts device in low-power sleep mode
Logic high for typical operation
Internal pulldown resistor
SR
11
IO
Slew rate control
Resistor to ground sets output slew rate
OUT1
2, 3, 4
O
Output 1
OUT2
18, 19, 20
O
Output 2
16
O
Current sense output
CONTROL
OUTPUT
VPROPI
(1)
Connect to motor winding
Output current is proportional to H-bridge current. 1 kΩ, 1%
resistor to GND for 2-A maximum current with VCC at 2 V. See
Equation 1 if more current is required
Directions: I = input, O = output, OZ = 3-state output, OD = open-drain output, IO = input or output
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SLVSCC0C – NOVEMBER 2013 – REVISED JULY 2016
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2)
MIN
MAX
UNIT
Power supply voltage, VCC
–0.3
7
V
Charge pump, VCP
–0.3
VCC + 7
V
Digital pin voltage, LDOEN, IN1H, IN1L, IN2H, IN2L, nSLEEP
–0.5
7
V
Other pins, OUT1, OUT2, SR, LDOUT, LDOFB, VPROPI
–0.3
7
V
Peak motor drive output current, OUT1, OUT2
Internally Limited
LDO output current, LDOOUT
Internally Limited
A
A
TJ
Operating junction temperature
–40
150
°C
Tstg
Storage temperature
–60
150
°C
(1)
(2)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to network ground terminal.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±4000
Charged device model (CDM), per JEDEC specification JESD22C101 (2)
±1500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
VCC
Device power supply voltage
2
5.5
V
VIN
Logic level input voltage
0
VCC
V
IOUT
H-bridge continuous output current (1)
0
5
A
(1)
IOUT
H-bridge peak output current
fPWM
Externally applied PWM frequency
TA
Ambient temperature
(1)
0
8
A
0
50
kHz
–40
85
°C
Power dissipation and thermal limits must be observed
6.4 Thermal Information
DRV8850
THERMAL METRIC
(1)
RGY (VQFN)
UNIT
24 PINS
RθJA
Junction-to-ambient thermal resistance
39.1
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
41.1
°C/W
RθJB
Junction-to-board thermal resistance
15
°C/W
ψJT
Junction-to-top characterization parameter
0.6
°C/W
ψJB
Junction-to-board characterization parameter
14.9
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
3.2
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5 Electrical Characteristics
TA = 25°C, over recommended operating conditions unless otherwise noted
PARAMETER
TEST CONDITIONS
MIN
NOM
MAX
UNIT
POWER SUPPLIES (VCC)
IVCC
VCC operating supply current,
LDO regulator and driver
enabled
VCC = 4.2 V,
nSLEEP = LDOEN = VCC
IVCQ1
VCC sleep mode supply current
VCC = 4.2 V, nSLEEP = LDOEN = 0 V,
INXH = INXL = 0 V
IVCQ2
VCC operating supply current,
LDO regulator enabled, driver
disabled (1)
VCC = 4.2 V, nSLEEP = 0 V,
LDOEN = VCC, INXH = INXL = 0 V
40
μA
IVCQ3
VCC operating supply current
LDO voltage regulator disabled,
driver enabled
VCC = 4.2 V, nSLEEP = VCC,
LDOEN = 0 V
2.9
mA
VUVLO
VCC undervoltage lockout
voltage
VOVLO
VCC overvoltage lockout voltage
2.9
mA
1
VCC rising
2
VCC falling
1.95
VCC rising
5.6
VCC falling
5.5
μA
V
V
LOGIC-LEVEL INPUTS (LDOEN, IN1H, IN1L, IN2H, IN2L, nSLEEP)
VIL
Input low voltage
0
VIH
Input high voltage
VHYS
Input hysteresis
IIL
Input low current
VIN = 0
IIH
Input high current
VIN = 3.3 V
RPD
Pulldown resistance
0.5 × VCC
0.2 × VCC
V
VCC
V
1
μA
50
μA
0.08 × VCC
–1
V
LDOEN
3.5
MΩ
nSLEEP
400
kΩ
INXH, INXL
200
kΩ
IOUT / 2000
A
VPROPI OUTPUT (VPROPI)
IVPROPI
VPROPI output current
VCC = 4.2 V, resistor chosen to keep
VPROPI ≤ (VCC – 1 V) / IOUT
500 mA ≤ IOUT ≤ 5 A
H-BRIDGE FETS (OUT1, OUT2)
RDS(ON) HS FET on resistance
LS FET on resistance
IOFF
Off-state leakage current
VCC = 4.2 V, IOUT = 2 A, TA = 25°C
35
VCC = 4.2 V, IOUT = 2 A, TA = 85°C
49
VCC = 4.2 V, IOUT = 2 A, TA = 25°C
30
VCC = 4.2 V, IOUT = 2 A, TA = 85°C
VOUT = 0 V
45
40
44
–1
mΩ
mΩ
1
μA
0.84
V
LDO REGULATOR (LDOOUT)
LDO feedback (reference)
voltage
VFB
VDO
LDO regulator dropout voltage
0.76
0.8
VCC = 4.2 V, IOUT = 100 mA,
TA = 25°C
150
mV
VCC = 4.2 V, IOUT = 100 mA,
TA = 85°C
175
mV
ΔVLINE
LDO line regulation
VCC from 4.2 to 5.5 V,
VOUT = 3.3 V
–2.5%
2.5%
ΔVLOAD
LDO load regulation
VOUT = 3.3 V,
IOUT from 1 to 100 mA
–2.5%
2.5%
ICL
LDO output current limit
VCC = 4.2 V,
VOUT = 3.3 V, TA ≥ 25°C
(1)
275
mA
Does not include the current consumption from the feedback resistors.
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Electrical Characteristics (continued)
TA = 25°C, over recommended operating conditions unless otherwise noted
PARAMETER
TEST CONDITIONS
MIN
NOM
MAX
UNIT
PROTECTION CIRCUITS
IOCP
Overcurrent protection trip level
tOCP
Overcurrent protection deglitch
time
VCC = 2.5 to 5.5 V
tRETRY
Overcurrent retry time
tTSD
Thermal shutdown temperature
Die temperature (rising)
tHYS
Thermal shutdown hysteresis
Temperature hysteresis
9.5
A
1
µs
4
150
ms
160
180
°C
50
°C
6.6 Timing Requirements
TA = 25°C, VCC = 4.2 V, RL = 2 Ω (1)
MIN
tR, tF
tDELAY
Rise and fall time
(measured at OUTx)
RSR = 24 kΩ
0.7
µs
RSR = 2.4 MΩ
70
µs
500
ns
750
ns
Low-side slow decay
HS OFF to LS ON
High-side slow decay
or fast decay
HS OFF to LS ON
High-side slow decay
or fast decay
LS OFF to HS ON
(1)
6
UNIT
ns
Propagation delay
RSR connected to GND
(measured as time between
RSR = 24 kΩ
input edge to output
RSR = 2.4 MΩ
change)
Dead time (measured as
time OUTx FET is Hi-Z)
MAX
70
Low-side slow decay
LS OFF to HS ON
tDEAD
NOM
RSR connected to GND
50
µs
RSR short to GND
400
ns
RSR = 24 kΩ
2.6
µs
RSR = 2.4 MΩ
110
µs
RSR short to GND
400
ns
RSR = 24 kΩ
2.6
µs
RSR = 2.4 MΩ
110
µs
RSR short to GND
400
ns
RSR = 24 kΩ
2.6
µs
RSR = 2.4 MΩ
110
µs
RSR short to GND
600
ns
RSR = 24 kΩ
3.9
µs
RSR = 2.4 MΩ
165
µs
Rise and fall time measured from 10 to 90% VCC
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6.7 Typical Characteristics
2.8
2.6
2.4
2.4
2.2
2.2
2.0
2.0
1.8
1.8
1.6
1.6
1.4
1.4
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VCC (V)
5.5
38
2.0
3.0
3.5
4.0
4.5
5.0
VCC (V)
5.5
C002
Figure 2. Quiescent Current With Motor Driver ON and LDO
OFF
2.5
TA = +85°C
TA = +25°C
36
2.5
C001
Figure 1. Quiescent Current With Motor Driver ON and LDO
ON
TA = +85°C
TA = +25°C
2.0
34
Iq (µA)
32
Iq (µA)
TA = +85°C
TA = +25°C
2.6
Iq (mA)
Iq (mA)
2.8
TA = +85°C
TA = +25°C
30
28
26
1.5
1.0
0.5
24
22
0.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VCC (V)
2.5
3.0
60
60
50
50
RDS(ON) (m )
70
30
20
4.0
4.5
5.0
5.5
C003
C004
Figure 4. Quiescent Current With Motor Driver OFF and LDO
OFF, Sleep Current
70
40
3.5
VCC (V)
C003
Figure 3. Quiescent Current With Motor Driver OFF and LDO
ON
RDS(ON) (m )
2.0
5.5
40
30
20
TA = +85°C
TA = +25°C
TA = ±40ƒC
10
0
2.0
2.5
3.0
TA = +85°C
TA = +25°C
TA = ±40ƒC
10
0
3.5
4.0
4.5
VCC
5.0
5.5
2.0
C005
C011
Figure 5. RDS(ON), HS – OUT1
2.5
3.0
3.5
4.0
4.5
5.0
VCC
5.5
C005
C006
Figure 6. RDS(ON), HS – OUT2
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70
70
60
60
50
50
RDS(ON) (m )
RDS(ON) (m )
Typical Characteristics (continued)
40
30
20
40
30
20
TA = +85°C
TA = +25°C
TA = ±40ƒC
10
0
2.0
2.5
3.0
TA = +85°C
TA = +25°C
TA = ±40ƒC
10
0
3.5
4.0
4.5
5.0
VCC
5.5
2.0
Error (% from 25ƒC, 10-mA load)
Error (% from 25ƒC, 10-mA load)
0.0
±1.0
±1.5
±2.0
TA = +85°C
TA = +25°C
TA = ±40ƒC
0.02
0.04
0.06
0.08
IOUT (A)
5.5
C005
C007
C008
0.10
±0.2
±0.4
±0.6
±0.8
±1.0
±1.2
0.00
TA = +85°C
TA = +25°C
TA = ±40ƒC
0.02
0.04
0.06
0.08
0.10
IOUT (A)
C005
C009
C005
C010
Figure 10. LDO Output, VCC = 4.2 V,
LDOOUT = 3.3 V
0.2
2.5
0.0
2.0
±0.2
VPROPI (V)
Error (% from 25ƒC, 10-mA load)
5.0
0.0
Figure 9. LDO Output, VCC = 3.5 V,
LDOOUT = 3.3 V
±0.4
±0.6
0.02
1.5
1.0
OUT1, TA = +85°C
OUT1, TA = +25°C
0.5
TA = +85°C
TA = +25°C
TA = ±40ƒC
OUT1, TA = ±40ƒC
0.0
0.04
0.06
0.08
IOUT (A)
0.10
0
1
2
3
4
IOUT (A)
C005
C011
Figure 11. LDO Output, VCC = 5.5 V,
LDOOUT = 3.3 V
8
4.5
Figure 8. RDS(ON), LS – OUT2
±0.5
±1.0
0.00
4.0
0.2
0.5
±0.8
3.5
C005
C007
Figure 7. RDS(ON), LS – OUT1
±3.0
0.00
3.0
VCC
1.0
±2.5
2.5
5
C005
C012
Figure 12. VPROPI Output, VCC = 4.2 V, OUT1
Overtemperature, 1 kΩ
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Typical Characteristics (continued)
2.5
VPROPI (V)
2.0
1.5
1.0
0.5
OUT1, TA = +85°C
OUT1, TA = +25°C
OUT1, TA = ±40ƒC
0.0
0
1
2
3
IOUT (A)
4
5
C005
C013
Figure 13. VPROPI Output, VCC = 4.2 V, OUT2 Overtemperature, 1 kΩ
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7 Detailed Description
7.1 Overview
The DRV8850 is an integrated motor driver solution for one DC motor. The device integrates one NMOS Hbridge, current regulation circuitry, and various protection circuitry. The DR8850 can be powered with a supply
voltage range from 2 V to 5.5 V, and is capable of providing an output current up to 5-A peak current. Actual
operable peak current will depend on the temperature, supply voltage, and PCB ground plane size. Between
VM = 1.95 V and VM = 2 V the H-bridge outputs are shut down.
A simple 4 pin interface allows for individual control of each internal H-bridge FET. The condition where both HS
and LS FETs are turned on at the same time is not allowed. During this input condition both the HS and LS FETs
turn off.
The current monitoring is configurable from a range of 500 mA to 5 A. The VPROPI pin outputs an analog
current that is proportional to the current flowing through the H-bridge. VPROPI is derived from the current
through either of the high side FETs. Because of this, VPROPI does not represent H-bridge current when
operating in a fast-decay mode or low-side slow-decay mode.
The LDO regulator integrated in the DRV8850 is typically used to provide the supply voltage for a low-power
microcontroller. The output voltage is adjustable from 1.6 V to VCC – VLDO using external resistors. LDOEN pin
is used to enable or disable the LDO regulator; when disabled the output is turned off and the LDO regulator
enters a very-low-power state.
10
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7.2 Functional Block Diagram
LDOOUT
2.0 to
5.5 V LDOEN
LDOOUT
VCP
VCC
LDO
Regulator
LDOFB
VCC
Overvolt
Undervolt
Charge
Pump
VCC
VCC
VCC
SR
VCC
OUT1
OverTemp
OCP
ISEN
Gate
Drive
OUT1
OUT1
Osc
IN1H
IN1L
DCM
VCC
Logic
OUT2
IN2H
IN2L
Gate
Drive
OCP
ISEN
OUT2
OUT2
VPROPI
nSLEEP
GND GND GND GND
PPAD
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7.3 Feature Description
Table 1 lists the external components.
Table 1. External Components
PIN
DESCRIPTION
NAME
NO.
LDOFB
14
LDO regulator
feedback
Resistor divider from LDOUT sets LDO output voltage.
LDOOUT
15
LDO regulator output
Bypass to GND with a 2.2-μF 6.3-V ceramic capacitor.
SR
11
Slew rate control
Resistor to ground sets output slew rate GND to 2.4 MΩ.
VCC
21, 22, 23
Device supply
Bypass to GND with 0.1-μF and 10-μF 6.3-V ceramic capacitors.
VCP
17
Charge pump
Connect a 0.1-μF 6.3-V ceramic capacitor to VCC
VPROPI
16
Current sense output
Output current is proportional to H-bridge current. 1 kΩ, 1% resistor to GND for 2-A
max current with VCC at 2 V. See Equation 1 for if more current is required.
7.3.1 Power Supervisor
The LDO regulator can be active independent of the nSLEEP pin. This independence allows a microcontroller, or
other device, to be powered by the LDO voltage regulator, while retaining the ability to put the DRV8850 device
into sleep mode.
Because of this functionality, nSLEEP and LDOEN must both be brought logic low to minimize power
consumption in sleep mode. If the LDO regulator remains active in sleep mode, a quiescent current of IVCQ2
(typically 50 µA plus current through the external feedback resistors) is drawn from the supply.
Table 2 lists the operation mode logic for the DRV8850 device.
Table 2. DRV8850 Device Operation Mode Logic (1)
(1)
nSLEEP
LDOEN
LDO
REGULATOR
DRIVER
0
0
Off
Sleep
0
1
Active
Sleep
1
0
Off
Active
1
1
Active
Active
A state must be active for a minimum of 1 ms before a new state is
commanded.
7.3.2 Bridge Control
A corresponding input pin controls the individual FETs in the DRV8850 device. Shoot-through (the condition
when both HS and LS FETs are turned on at the same time) is not allowed; with this input condition, both the HS
and LS FETs turn off.
Table 3 lists the logic for the DRV8850 device.
Table 3. DRV8850 Device Logic
12
INxL
INxH
OUTx
0
0
Z
0
1
H
1
0
L
1
1
Z
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7.3.3 Current Sensing – VPROPI
The VPROPI pin outputs an analog current that is proportional to the current flowing in the H-bridge. The output
current is typically 1 / 2000 of the current in both high side FETs. VPROPI is derived from the current through
either of the high side FETs. Because of this, VPROPI does not represent the H-bridge current when operating in
a fast-decay mode or low-side slow-decay mode. VPROPI represents the H-bridge current under forward drive,
reverse drive, and high-side slow decay. VPROPI output is delayed by roughly 2 µs after the high side FET is
switched on and it has reached approximately VCC (including the deglitch on the HSon). Select the external
resistor so that the voltage on VPROPI is less than (VCC – 1 V), so the resistor must be sized less than:
2000 x VCC
1V
/ IOUT
(1)
where IOUT is the maximum drive current to be monitored
The range of current that can be monitored is 500 mA to 5 A, assuming the external resistor meets Equation 1.
VCC
VCC
4
4
1
OUT2
OUT1
2
1
Forward drive
2
Fast decay
3
Low-side slow decay
4
High-side slow decay
1
OUT2
OUT1
3
1
Reverse drive
2
Fast decay
3
Low-side slow decay
4
High-side slow decay
2
3
FORWARD
REVERSE
Figure 14. Forward and Reverse Operation
When using an independent half-bridge as a high-side driver, VPROPI does not output a current measurement
during slow decay. During typical operation, VPROPI represents the total current flowing to loads connected to
OUT1 and OUT2.
VPROPI is nonfunctional when implemented as a low-side driver.
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VCC
VCC
1
1
OUT1
2
VCC
Normal operation
2
Slow decay
1
Normal operation
2
Slow decay
OUT1
2
1
High-side driver
Low-side driver
Figure 15. High-Side and Low-Side Drivers
7.3.4 Slew-Rate Control
The rise and fall times (tR and tF) of the outputs can be adjusted by the value of an external resistor connected
from the SR pin to ground. The output slew rate is adjusted internally by the DRV8850 device by controlling the
ramp rate of the driven FET gate.
The typical voltage on the SR pin is 0.6 V driven internally. Changing the resistor value monotonically increases
the slew rates from approximately 100 ns to 100 µs. Recommended values for the external resistor are from
GND to 2.4 MΩ. If the SR pin is grounded then the slew rate is 100 ns.
7.3.5 Dead Time
The dead time (tDEAD) is measured as the time when OUTx is Hi-Z between turning off one of the H-bridge FETs
and turning on the other. For example, the output is Hi-Z between turning off the high-side FET and turning on
the low-side FET. When driving current out of the pin, the output is observed to fall to one diode drop below
ground during dead time. When driving current into the pin, the output is observed to rise to one diode drop
above VCC.
The DRV8850 has an analog dead time of approximately 100 ns. In addition to this analog dead time, the output
is Hi-Z when the FET gate voltage is less than the threshold voltage. The total dead time depends on the SR
resistor setting because a portion of the FET gate ramp includes the observable dead time.
7.3.6 Propagation Delay
The propagation delay time (tDELAY) is measured as the time between an input edge to an output change. This
time is composed of two parts: an input deglitcher and output slewing delay. The input deglitcher prevents noise
on the input pins from affecting the output state.
The output slew rate also contributes to the delay time. For the output to change state during typical operation,
first one FET must be turned off. The FET gate is ramped down according to the SR resistor selection, and the
observed propagation delay ends when the FET gate falls to less than the threshold voltage.
14
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INxH
INxL
High-side
Gate
Low-side
Gate
HS Slew Rate
HS Slew Rate
LS Slew Rate
LS Slew Rate
OUTx
tDELAY
tDEAD
tR
tDELAY
tF
tDEAD
Figure 16. Low-Side Slow Decay Operation – Current Sourced from OUTx
INxH
INxL
High-side
Gate
HS Slew Rate
HS Slew Rate
Low-side
Gate
LS Slew Rate
LS Slew Rate
OUTx
tDELAY
tDEAD
tF
tDELAY
tR
tDEAD
Figure 17. High-Side Slow Decay or Fast Decay Operation – Current Sunk into OUTx
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7.3.7 Power Supplies and Input Pins
An internal charge pump generates a voltage greater than VCC that is used to drive the internal N-channel
power MOSFETs. The charge pump requires a capacitor between the VCP and VCC pins. TI recommends
bypassing VCC to ground with 0.1-μF and 10-μF ceramic capacitors, placing them as close as possible to the IC.
Each input pin has a weak pulldown resistor to ground (see Electrical Characteristics for more details).
The input pins should not be driven to more than 0.6 V without the VCC power supply removed.
7.3.8 LDO Voltage Regulator
An LDO regulator is integrated into the DRV8850 device. The LDO regulator is typically used to provide the
supply voltage for a low-power microcontroller. For proper operation, bypass the LDOOUT pin to GND using a
ceramic capacitor. The recommended value for this component is 2.2 μF.
Two external resistors are used to set the LDO voltage (VLDO) by creating a voltage divider between LDOOUT
and LDOFB. The LDO output voltage can be given by:
VLDO = VFB ´ (1 + R1/ R2)V
where
•
•
R1 is located between LDOOUT and LDOFB
R2 is between LDOFB and GND
(2)
LDOOUT
LDOOUT
LDO regulator
2.2 µF
R1
LDOFB
R2
Figure 18. LDO Regulator Schematic
The output voltage is adjustable from 1.6 V to VCC – VLDO using external resistors. The LDOEN pin is used to
enable or disable the LDO regulator; when disabled, the output is turned off and the LDO regulator enters a verylow-power state.
When the LDO current load exceeds ICL, the LDO regulator behaves like a constant current source. The LDO
output voltage drops significantly with currents greater than ICL.
7.3.9 Protection Circuits
The DRV8850 device is protected against undervoltage, overvoltage, overcurrent, and overtemperature events.
7.3.9.1 Overcurrent Protection (OCP)
An analog current limit circuit on each FET limits the current through the FET by removing the gate drive. If this
analog current limit persists for longer than tOCP, all FETs in the H-bridge are disabled. After approximately
tRETRY, the bridge reenables automatically.
Overcurrent conditions on both high and low-side devices, that is, a short to ground, supply, or across the motor
winding result in an overcurrent shutdown.
7.3.9.2 Thermal Shutdown (TSD)
If the die temperature exceeds tTSD, all FETs in the H-bridge are disabled. Once the die temperature has fallen
below tTSD – tHYS, the H-bridge automatically reenables.
16
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7.3.9.3 Undervoltage Lockout (UVLO)
If at any time the voltage on the VCC pins falls to less than the undervoltage lockout threshold voltage, all
circuitry in the device is disabled and internal logic resets. Operation resumes when VCC rises to greater than
the UVLO threshold.
7.3.9.4 Overvoltage Lockout (OVLO)
If at any time the voltage on the VCC pins rises to more than VOVLO, the output FETs are disabled (outputs are
high-Z). Operation resumes when VCC falls below the VOVLO.
CAUTION
VCC must remain less than the absolute maximum rating for the device, or damage to
the device may occur.
7.4 Device Functional Modes
The DRV8850 internal logic and charge pump are operating unless nSLEEP is pulled low. The LDO regulator
can be active independent of the nSLEEP pin. This independence allows a microcontroller or other device to be
powered by the LDO regulator while retaining the ability to put the DRV8850 into sleep mode.
If LDOEN and nSLEEP are both brought logic low the device will minimize current consumption in sleep mode.
While the LDO regulator remains active n sleep mode, a quiescent current (typically 50 µA plus current through
the external feedback resistors) is drawn from the supply.
Each FET inside the device is controlled by a corresponding input pin on the DRV8850. The condition where
both HS and LS FETs are turned on at the same time is not allowed. During this input condition both the HS and
LS FETs turn off.
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The DRV8850 can be used to drive a DC motor.
8.2 Typical Application
BDC
1
2
3
4
5
6
7
8
9
10
11
12
DRV8850
GND
GND
OUT1
OUT2
OUT1
OUT2
OUT1
OUT2
IN1H
VCC
IN1L
VCC
IN2H
VCC
IN2L
VCP
nSLEEP
VPROPI
LDOEN
LDOOUT
SR
LDOFB
GND
GND
24
23
22
21
5.5 V
20
19
10 µF
18
0.1 µF
0.1 µF
17
16
4.3 kΩ
3.2 V
15
14
3 kΩ
13
24 kΩ
2.2 µF
1 kΩ
8.2.1 Design Requirements
Table 4 lists the parameters for this design example.
Table 4. Design Parameters
DESIGN PARAMETER
Supply voltage
LDO output voltage
EXAMPLE VALUE
VM
5.5 V
VLDO
3.2 V
SR
700 ns
HS FET on resistance
RDS(ON)_HS
35 mΩ
LS FET on resistance
RDS(ON)_LS
30 mΩ
IM
2A
Slew rate
Motor rated current
18
REFERENCE
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8.2.2 Detailed Design Procedure
8.2.2.1 Motor Voltage
The motor voltage to use will depend on the ratings of the motor selected and the desired RPM. A higher voltage
spins a brushed DC motor faster with the same PWM duty cycle applied to the power FETs. A higher voltage
also increases the rate of current change through the inductive motor windings.
8.2.2.2 Drive Current
The current path is through the high-side sourcing DMOS power driver, motor winding, and low-side sinking
DMOS power driver. Power dissipation losses in one source and sink DMOS power driver are shown in the
following equation.
PD = I2 (RDS(ON)_HS + RDS(ON)_LS)
(3)
The DRV8850 has been measured to be capable of 5-A RMS current at 25°C on standard FR-4 PCBs. The
maximum RMS current varies based on PCB design and the ambient temperature.
8.2.3 Application Curves
Figure 19. IM Start-Up after LDOEN and nSLEEP Toggle
Figure 20. IM Start-Up Delay after LDOEN and nSLEEP
Toggle
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9 Power Supply Recommendations
9.1 Bulk Capacitance
Having appropriate local bulk capacitance is an important factor in motor drive system design. It is generally
beneficial to have more bulk capacitance, while the disadvantages are increased cost and physical size.
The amount of local capacitance needed depends on a variety of factors, including:
• The highest current required by the motor system.
• The power supply’s capacitance and ability to source current.
• The amount of parasitic inductance between the power supply and motor system.
• The acceptable voltage ripple.
• The type of motor used (Brushed DC, Brushless DC, Stepper).
• The motor braking method.
The inductance between the power supply and motor drive system will limit the rate current can change from the
power supply. If the local bulk capacitance is too small, the system will respond to excessive current demands or
dumps from the motor with a change in voltage. When adequate bulk capacitance is used, the motor voltage
remains stable and high current can be quickly supplied.
The data sheet generally provides a recommended value, but system-level testing is required to determine the
appropriate sized bulk capacitor.
Power Supply
Parasitic Wire
Inductance
Motor Drive System
VM
+
–
+
Motor
Driver
GND
Local
Bulk Capacitor
IC Bypass
Capacitor
Figure 21. Example Setup of Motor Drive System With External Power Supply
The voltage rating for bulk capacitors should be higher than the operating voltage, to provide margin for cases
when the motor transfers energy to the supply.
10 Layout
10.1 Layout Guidelines
•
•
•
•
20
The bulk capacitor should be placed to minimize the distance of the high-current path through the motor
driver device. The connecting metal trace widths should be as wide as possible, and numerous vias should
be used when connecting PCB layers. These practices minimize inductance and allow the bulk capacitor to
deliver high current.
Small-value capacitors should be ceramic, and placed close to the device pins.
The high-current device outputs should use wide metal traces.
The device thermal pad should be soldered to the PCB top-layer ground plane. Multiple vias should be used
to connect to a large bottom-layer ground plane. The use of large metal planes and multiple vias help
dissipate the I2 × RDS(on) heat that is generated in the device.
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10.2 Layout Example
Figure 22. Layout Recommendation
10.3 Thermal Considerations
The DRV8850 device has thermal shutdown (TSD) as described in the Thermal Shutdown (TSD) section. If the
die temperature exceeds approximately tTSD, the device will be disabled until the temperature drops to a safe
level.
Any tendency of the device to enter thermal shutdown is an indication of either excessive power dissipation,
insufficient heatsinking, or too high an ambient temperature.
10.3.1 Power Dissipation
Power dissipation in the DRV8850 device is the sum of the motor driver power dissipation and the LDO voltage
regulator dissipation.
The LDO dissipation is calculated simply by (VIN – VOUT) × IOUT.
The power dissipation in the motor driver is dominated by the power dissipated in the output FET resistance, or
RDS(ON). Power dissipation can be estimated by:
PTOT
LS _ RDS (ON )
HS _ RDS (ON ) x IOUT ( RMS )
2
where
•
•
•
PTOT is the total power dissipation
RDS(ON) is the resistance of each FET
IOUT(RMS) is the RMS output current being driven
(4)
The maximum amount of power that can be dissipated in the device is dependent on ambient temperature and
heat sinking.
Note that RDS(ON) increases with temperature, so as the device heats, the power dissipation increases.
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation see the following:
DRV8850EVM User’s Guide
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
22
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PACKAGE OPTION ADDENDUM
www.ti.com
5-Jul-2016
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
DRV8850RGYR
ACTIVE
VQFN
RGY
24
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
DRV8850
DRV8850RGYT
ACTIVE
VQFN
RGY
24
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
DRV8850
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
5-Jul-2016
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Jul-2016
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
DRV8850RGYR
VQFN
RGY
24
3000
330.0
12.4
3.8
5.8
1.2
8.0
12.0
Q1
DRV8850RGYT
VQFN
RGY
24
250
180.0
12.4
3.8
5.8
1.2
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Jul-2016
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
DRV8850RGYR
VQFN
RGY
24
3000
367.0
367.0
35.0
DRV8850RGYT
VQFN
RGY
24
250
210.0
185.0
35.0
Pack Materials-Page 2
GENERIC PACKAGE VIEW
RGY 24
5.5 x 3.5 mm, 0.5 mm pitch
VQFN - 1 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
Images above are just a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4203539-5/J
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consequences of failures, (2) monitor failures and their consequences, and (3) lessen the likelihood of failures that might cause harm and
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thoroughly test such applications and the functionality of such TI products as used in such applications.
TI’s provision of technical, application or other design advice, quality characterization, reliability data or other services or information,
including, but not limited to, reference designs and materials relating to evaluation modules, (collectively, “TI Resources”) are intended to
assist designers who are developing applications that incorporate TI products; by downloading, accessing or using TI Resources in any
way, Designer (individually or, if Designer is acting on behalf of a company, Designer’s company) agrees to use any particular TI Resource
solely for this purpose and subject to the terms of this Notice.
TI’s provision of TI Resources does not expand or otherwise alter TI’s applicable published warranties or warranty disclaimers for TI
products, and no additional obligations or liabilities arise from TI providing such TI Resources. TI reserves the right to make corrections,
enhancements, improvements and other changes to its TI Resources. TI has not conducted any testing other than that specifically
described in the published documentation for a particular TI Resource.
Designer is authorized to use, copy and modify any individual TI Resource only in connection with the development of applications that
include the TI product(s) identified in such TI Resource. NO OTHER LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE
TO ANY OTHER TI INTELLECTUAL PROPERTY RIGHT, AND NO LICENSE TO ANY TECHNOLOGY OR INTELLECTUAL PROPERTY
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other intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information
regarding or referencing third-party products or services does not constitute a license to use such products or services, or a warranty or
endorsement thereof. Use of TI Resources may require a license from a third party under the patents or other intellectual property of the
third party, or a license from TI under the patents or other intellectual property of TI.
TI RESOURCES ARE PROVIDED “AS IS” AND WITH ALL FAULTS. TI DISCLAIMS ALL OTHER WARRANTIES OR
REPRESENTATIONS, EXPRESS OR IMPLIED, REGARDING RESOURCES OR USE THEREOF, INCLUDING BUT NOT LIMITED TO
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INCLUDING BUT NOT LIMITED TO ANY INFRINGEMENT CLAIM THAT RELATES TO OR IS BASED ON ANY COMBINATION OF
PRODUCTS EVEN IF DESCRIBED IN TI RESOURCES OR OTHERWISE. IN NO EVENT SHALL TI BE LIABLE FOR ANY ACTUAL,
DIRECT, SPECIAL, COLLATERAL, INDIRECT, PUNITIVE, INCIDENTAL, CONSEQUENTIAL OR EXEMPLARY DAMAGES IN
CONNECTION WITH OR ARISING OUT OF TI RESOURCES OR USE THEREOF, AND REGARDLESS OF WHETHER TI HAS BEEN
ADVISED OF THE POSSIBILITY OF SUCH DAMAGES.
Unless TI has explicitly designated an individual product as meeting the requirements of a particular industry standard (e.g., ISO/TS 16949
and ISO 26262), TI is not responsible for any failure to meet such industry standard requirements.
Where TI specifically promotes products as facilitating functional safety or as compliant with industry functional safety standards, such
products are intended to help enable customers to design and create their own applications that meet applicable functional safety standards
and requirements. Using products in an application does not by itself establish any safety features in the application. Designers must
ensure compliance with safety-related requirements and standards applicable to their applications. Designer may not use any TI products in
life-critical medical equipment unless authorized officers of the parties have executed a special contract specifically governing such use.
Life-critical medical equipment is medical equipment where failure of such equipment would cause serious bodily injury or death (e.g., life
support, pacemakers, defibrillators, heart pumps, neurostimulators, and implantables). Such equipment includes, without limitation, all
medical devices identified by the U.S. Food and Drug Administration as Class III devices and equivalent classifications outside the U.S.
TI may expressly designate certain products as completing a particular qualification (e.g., Q100, Military Grade, or Enhanced Product).
Designers agree that it has the necessary expertise to select the product with the appropriate qualification designation for their applications
and that proper product selection is at Designers’ own risk. Designers are solely responsible for compliance with all legal and regulatory
requirements in connection with such selection.
Designer will fully indemnify TI and its representatives against any damages, costs, losses, and/or liabilities arising out of Designer’s noncompliance with the terms and provisions of this Notice.
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