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DS100BR111
SNLS338F – JANUARY 2011 – REVISED NOVEMBER 2014
DS100BR111 Ultra Low Power 10.3 Gbps 1-Lane Repeater
with Input Equalization and Output De-Emphasis
1 Features
3 Description
•
The DS100BR111 is an extremely low power, high
performance repeater designed to support serial links
with data rates up to 10.3 Gbps. The DS100BR111
pinout is configured as one bidirectional lane (one
transmit, one receive channel). The DS100BR111
inputs feature a powerful 4-stage continuous time
linear equalizer (CTLE) to provide a boost of up to
+36 dB at 5 GHz and open an input eye that is
completely closed due to inter-symbol interference
(ISI) induced by the interconnect mediums such as
board traces or twin-axial copper cables. The
transmitter features a programmable output deemphasis driver with up to -12 dB and can drive
output voltage levels from 700 mVp-p to 1300 mVp-p.
1
•
•
•
•
•
•
•
•
Two Channel Repeaters for up to 10.3 Gbps
– DS100BR210 : 2x Unidirectional Channels
– DS100BR111 : 1x Bidirectional Lane
10G-KR Bi-directional Interface Compatibility
– Allows for Back-channel Communication and
Training
Low 65 mW/channel (Typical) Power
Consumption, with Option to Power Down Unused
Channels
Advanced Signal Conditioning Features
– Receive Equalization up to +36 dB
– Transmit De-emphasis up to -12 dB
– Transmit VOD Control: 700 to 1300 mVp-p
– Low Residual DJ at 10.3 Gbps
Programmable Via Pin Selection, EEPROM, or
SMBus Interface
Single Supply Voltage: 2.5 V or 3.3 V
Flow-thru Pinout in 4 mm × 4 mm 24-pin Leadless
WQFN Package
5 kV HBM ESD Rating
-40 to 85°C Operating Temperature Range
When configured as a 10G-KR repeater, the
DS100BR111 allows the KR host and the end point to
optimize the full link by adjusting transmit and receive
equalizer
coefficients
using
back-channel
communication techniques specified by the 802.3ap
Ethernet standard.
The programmable settings can be applied via pin
control, SMBus protocol, or an external EEPROM. In
the EEPROM mode, the configuration information is
automatically loaded on power up, thereby eliminating
the need for an external microprocessor or software
driver.
2 Applications
•
•
High-speed Active Copper Cable Modules and
FR-4 Backplane in Communication Systems
10GE, 10G-KR, FC, SAS, SATA 3/6 Gbps (with
OOB Detection), InfiniBand, CPRI, RXAUI and
many others
Device Information(1)
PART NUMBER
DS100BR111
PACKAGE
BODY SIZE (NOM)
WQFN (24)
4.00 mm x 4.00 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
4 Simplified Schematic
SMBus
50:
Typical Application
VOD/ DE-EMPHASIS CONTROL
VOD
VDD
Line Card
DEM
50:
SMBus
EQ
OUTBUF
IN+
IN-
1x10G
OUT+
OUT-
Tx IDLE Enable
ASIC
DS100BR111
1 x SFP+
FPGA
1x10G
EQ[1:0]
SMBus
IDLE DETECT
Channel
Status
and
Control
LOS
SD_TH
TX_DIS
MODE
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
DS100BR111
SNLS338F – JANUARY 2011 – REVISED NOVEMBER 2014
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Simplified Schematic.............................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
1
2
3
6
7.1
7.2
7.3
7.4
7.5
Absolute Maximum Ratings ...................................... 6
Handling Ratings....................................................... 6
Recommended Operating Conditions....................... 6
Electrical Characteristics........................................... 6
Electrical Characteristics — Serial Management Bus
Interface .................................................................... 9
7.6 Timing Requirements — LOS and ENABLE /
DISABLE Timing ........................................................ 9
7.7 Typical Characteristics ............................................ 11
8
Detailed Description ............................................ 12
8.1 Overview ................................................................. 12
8.2 Functional Block Diagram ....................................... 12
8.3
8.4
8.5
8.6
9
Feature Description.................................................
Device Functional Modes........................................
Programming...........................................................
Register Maps .........................................................
13
13
16
30
Application and Implementation ........................ 37
9.1 Application Information............................................ 37
9.2 Typical Application ................................................. 38
10 Power Supply Recommendations ..................... 45
10.1 Power Supply Bypass ........................................... 46
11 Layout................................................................... 46
11.1 Layout Guidelines ................................................. 46
11.2 Layout Example .................................................... 47
12 Device and Documentation Support ................. 48
12.1
12.2
12.3
12.4
Documentation Support ........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
48
48
48
48
13 Mechanical, Packaging, and Orderable
Information ........................................................... 48
5 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision E (February 2013) to Revision F
•
2
Page
Added, updated, or renamed the following sections: Device Information Table, Application and Implementation;
Power Supply Recommendations; Layout; Device and Documentation Support; Mechanical, Packaging, and
Ordering Information .............................................................................................................................................................. 1
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SNLS338F – JANUARY 2011 – REVISED NOVEMBER 2014
6 Pin Configuration and Functions
(1)
SCL/DEMB
SDA/DEMA
ENSMB
EQB1/AD2
EQB0/AD3
4
3
2
1
TX_DIS
5
6
24-Pin
RTW Package
Top View
OUTA+
7
24
INA+
OUTA-
8
23
INA-
22
VDD
21
VDD
AD1/EQA1
9
AD0/EQA0
10
INB+
11
20
OUTB+
INB-
12
19
OUTB-
14
15
16
SD_TH
VIN
VDD_SEL
_______
VOD_SEL / READEN
_____
MODE / DONE
18
13
LOS
17
SMBUS AND
CONTROL
The center DAP on the package bottom is the device GND connection. This pad must be connected to GND through
multiple (minimum of 4) vias to ensure optimal electrical and thermal performance.
Pin Functions (1)
PIN
NAME
NUMBER
I/O, TYPE
DESCRIPTION
DIFFERENTIAL HIGH SPEED I/O's
INA+, INA- ,
INB+, INB-
24, 23
11, 12
I, CML
Inverting and non-inverting CML differential inputs to the equalizer. On-chip 50 Ω
termination resistors connect both INx+ and INx- to VDD. Compatible with AC coupled
CML inputs.
OUTA+, OUTA-,
OUTB+, OUTB-
7, 8
20, 19
O, CML
Inverting and non-inverting 50 Ω driver outputs with de-emphasis. Compatible with AC
coupled CML inputs.
3
I, 4-LEVEL,
LVCMOS
CONTROL PINS
ENSMB
(1)
System Management Bus (SMBus) Enable Pin
High = Register Access SMBus Slave Mode
Float = Read External EEPROM (SMBus Master Mode)
Tie 1 kΩ to GND = Pin Mode
LVCMOS inputs without the “Float” conditions must be driven to a logic low or high at all times or operation is not ensured. Unless the
"Float" level is desired, 4-Level input pins require a minimum 1 kΩ resistor to GND, VDD (in 2.5 V mode), or VIN (in 3.3 V mode). Input
edge rate for LVCMOS/FLOAT inputs must be faster than 50 ns from 10–90%.
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SNLS338F – JANUARY 2011 – REVISED NOVEMBER 2014
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Pin Functions(1) (continued)
PIN
NAME
NUMBER
I/O, TYPE
DESCRIPTION
ENSMB = Float or 1 (SMBus MODES)
SCL
5
I, 2-LEVEL,
LVCMOS,
O, Open
Drain
Clock output when loading EEPROM configuration, reverting to SMBus clock input
when EEPROM load is complete (ALL_DONE = 0).
External 2 kΩ to 5 kΩ pull-up resistor to VDD (2.5 V mode) or VIN (3.3 V mode)
recommended as per SMBus interface standards (2)
SDA
4
I, 2-LEVEL,
LVCMOS,
O, Open
Drain
In both SMBus Modes, this pin is the SMBus data I/O. Data input or open drain output.
External 2 kΩ to 5 kΩ pull-up resistor to VDD (2.5 V mode) or VIN (3.3 V mode)
recommended as per SMBus interface standards (2)
10, 9, 2, 1
I, 4-LEVEL,
LVCMOS
ENSMB Master or Slave mode
SMBus Slave Address Inputs. In SMBus mode, these pins are the user set SMBus
slave address inputs. There are 16 addresses supported by these pins.
Pins must be tied Low or High when used to define the device SMBus address. (3)
ENSMB = Float: When using SMBus Master Mode, a logic low on this pin starts the
load from the external EEPROM.
ENSMB = 1: When using SMBus Slave Mode, the VOD_SEL/READEN pin must be
tied Low for the AD[3:0] to be active. If this pin is tied High or left floating, an address
of 0xB0 will be used for the DS100BR111.
AD0-AD3
READEN
17
I, 2-LEVEL,
LVCMOS
DONE
18
When using an External EEPROM (ENSMB = Float), Valid Register Load Status
O, 2-LEVEL, Output
LVCMOS
High = External EEPROM load failed or incomplete
Low = External EEPROM load passed
ENSMB = 0 (PIN MODE)
EQA0, EQA1
EQB0, EQB1
DEMA, DEMB
VOD_SEL
MODE
(2)
(3)
(4)
4
10, 9
1, 2
4, 5
17
18
I, 4-LEVEL,
LVCMOS
EQA[1:0] and EQB[1:0] control the level of equalization on the input pins. EQA[1:0]
controls the A channel, and EQB[1:0] controls the B channel. The pins are only active
when ENSMB = 0.
When ENSMB = 1, the SMBus registers provide independent control of each channel,
and the EQB0/B1 pins are converted to SMBus AD2/AD3 inputs.
See Table 3 for additional information.
I, 4-LEVEL,
LVCMOS
DEMA and DEMB control the level of de-emphasis for the output driver when in 10G
mode. DEMA controls the A channel, and DEMB controls the B channel. The pins are
only active when ENSMB = 0.
When ENSMB = 1, the SMBus registers provide independent control of each channel,
and the DEM pins are converted to SMBus SCL and SDA pins.
See Table 4 for additional information.
I, 4-LEVEL,
LVCMOS
VOD Select
High = 10G-KR Mode (VOD = 1.1 Vpp or 1.3 Vpp)
Float = (VOD = 1.0 Vpp)
20 kΩ to GND = (VOD = 1.2 Vpp)
1 kΩ to GND = (VOD = 700 mVpp)
See (3) (4) for additional notes. See Table 2 for additional information.
I, 4-LEVEL,
LVCMOS
Controls Device Mode of Operation
High= 10GbE Mode, Continuous Talk (Output Always On)
Float = 10G-KR Mode, Slow OOB
20 kΩ to GND = eSATA Mode, Fast OOB, Auto Low Power on 100 µs of inactivity. SD
stays active.
1 kΩ to GND = SAS Mode, Fast OOB
SCL and SDA pins can be tied either to 3.3 V or 2.5 V, regardless of whether the device is operating in 2.5 V mode or 3.3 V mode.
Setting VOD_SEL = High in SMBus Mode will force the SMBus Address = 0xB0
DS100BR111 OUTA is limited to 700 mVpp in pin mode.
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SNLS338F – JANUARY 2011 – REVISED NOVEMBER 2014
Pin Functions(1) (continued)
PIN
NAME
NUMBER
I/O, TYPE
DESCRIPTION
CONTROL PINS — BOTH PIN AND SMBus MODES (LVCMOS)
TX_DIS
6
I, 2-LEVEL,
LVCMOS
LOS
13
O, Open
Drain
SD_TH
14
I, 4-LEVEL,
LVCMOS
VDD_SEL
16
I, FLOAT
High = OUTA Enabled, OUTB Disabled
Low = OUTA and OUTB Enabled
Indicates Loss of Signal (Default is LOS on INA). Can be modified via SMBus
registers.
The SD_TH pin controls LOS threshold setting
Assert (mVpp), Deassert (mVpp)
High = 190 mVpp, 130 mVpp
Float = 180 mVpp, 110 mVpp (Default)
20 kΩ to GND = 160 mVpp, 100 mVpp
1 kΩ to GND = 210 mVpp, 150 mVpp (5)
Enables the 3.3 V to 2.5 V internal regulator
Low = 3.3 V Operation
Float = 2.5 V Operation
POWER
VDD
21, 22
Power
Power supply pins
When in 2.5 V mode, connect to 2.5 V supply.
When in 3.3 V mode, do not connect to any supply voltage. Should be used to attach
external decoupling to device, 100 nF recommended.
See Power Supply Recommendations for additional information.
VIN
15
Power
VIN = 3.3 V ± 10% (input to internal LDO regulator)
When in 2.5 V mode, VIN pin must be left floating.
See Power Supply Recommendations for additional information.
GND
DAP
Power
Ground pad (DAP - die attach pad).
(5)
Using values less than the default level can extend the time required to detect LOS and are not recommended.
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SNLS338F – JANUARY 2011 – REVISED NOVEMBER 2014
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7 Specifications
7.1 Absolute Maximum Ratings (1) (2)
MIN
MAX
UNIT
Supply Voltage (VDD)
-0.5
+2.75
V
Supply Voltage (VIN)
-0.5
+4.0
V
LVCMOS Input/Output Voltage
-0.5
+4.0
V
CML Input Voltage
-0.5
(VDD+0.5)
V
CML Input Current
-30
+30
mA
125
°C
Junction Temperature
(1)
(2)
“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied.
For soldering specifications, see SNOA549.
7.2 Handling Ratings
Tstg
MIN
MAX
UNIT
-40
+125
°C
-5
5
kV
Machine model (MM), STD - JESD22-A115-A
100
V
Charged device model (CDM), per JEDEC specification
JESD22-C101, all pins (2)
1250
Storage Temperature Range
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all
pins (1)
V(ESD)
(1)
(2)
Electrostatic Discharge
V
JEDEC document JEP155 states that 500 V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250 V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions (1)
MIN
TYP
MAX
UNIT
Supply Voltage (2.5 V mode)
2.375
2.5
2.625
V
Supply Voltage (3.3 V mode)
3.0
3.3
3.6
V
Ambient Temperature
-40
25
+85
°C
3.6
V
SMBus (SDA, SCL)
(1)
The Recommended Operating Conditions indicate conditions at which the device is functional and the device should not be operated
beyond such conditions. Absolute Maximum Numbers are ensured for a junction temperature range of -40°C to +125°C. Models are
validated to Maximum Operating Voltages only.
7.4 Electrical Characteristics
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
TX_DIS = Low, EQ = ON
VOD_SEL = Float (1000 mVpp)
50
63
Auto Low Power Mode
TX_DIS = Low, MODE = 20 kΩ
VID CHA and CHB = 0.0 V
VOD_SEL = Float (1000 mVpp)
12
15
TX_DIS = High
25
35
UNIT
POWER SUPPLY CURRENT
IDD
Supply Current
mA
LVCMOS DC SPECIFICATIONS
VIH25
High Level Input Voltage,
2-Level LVCMOS
2.5 V Supply Mode
2.0
VDD
V
VIH33
High Level Input Voltage,
2-Level LVCMOS
3.3 V Supply Mode
2.0
VIN
V
VIL
Low Level Input Voltage,
2-Level LVCMOS
GND
0.7
V
6
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Electrical Characteristics (continued)
PARAMETER
TEST CONDITIONS
VOH
High Level Output Voltage
IOH = -4.0 mA
VOL
Low Level Output Voltage
IOL = 4.0 mA
IIN
Input Leakage Current
Input Leakage Current
4-Level Input (2)
IIN-P
(1)
MIN
TYP
MAX
UNIT
2.0
V
0.4
V
Vinput = 0 V or VDD
VDD_SEL = Float
-15
+15
Vinput = 0 V or VIN
VDD_SEL = Low
-15
+15
Vinput = 0 V or VDD - 0.05 V
VDD_SEL = Float
Vinput = 0 V or VIN - 0.05 V
VDD_SEL = Low
-160
+80
µA
Default power-up conditions
ENSMB = 0 or 1
190
1600
mVp-p
µA
CML RECEIVER INPUTS
VTX
Source Transmit Launch
Differential Signal Level
RLRX-IN
RX return loss
SDD11 @ 4.1 GHz
800
-12
SDD11 @ 11.1 GHz
-8
SCD11 @ 11.1 GHz
-10
dB
HIGH SPEED TRANSMITTER OUTPUTS
VOD1
Output Voltage Differential Swing
OUT+ and OUT- AC coupled and
terminated by 50 Ω to GND
VOD_SEL = Low (700 mVpp setting)
DE = Low
500
650
800
VOD2
Output Voltage Differential Swing
OUT+ and OUT- AC coupled and
terminated by 50 Ω to GND
VOD_SEL = Float (1000 mVpp setting)
DE = Low
800
1000
1100
Output Voltage Differential Swing
OUT+ and OUT- AC coupled and
terminated by 50 Ω to GND
VOD_SEL = 20 kΩ to GND (1200
mVpp)
DE = Low
950
1150
1350
De-Emphasis Levels
OUT+ and OUT- AC coupled and
terminated by 50 Ω to GND
VOD_SEL = Float (1000 mVpp)
DE = Float
-3
dB
De-Emphasis Levels
OUT+ and OUT- AC coupled and
terminated by 50 Ω to GND
VOD_SEL = Float (1000 mVpp)
DE = 20 kΩ to GND
-6
dB
VOD3
VOD_DE1
VOD_DE2
(1)
(2)
mVp-p
VOH only applies to the DONE pin; LOS, SCL, and SDA are open-drain outputs that have no internal pull-up capability. DONE is a full
LVCMOS output with pull-up and pull-down capability.
Input is held to a maximum of 50 mV below VDD or VIN to simulate the use of a 1 kΩ resistor on the input.
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Electrical Characteristics (continued)
PARAMETER
TEST CONDITIONS
VOD_DE3
De-Emphasis Levels
OUT+ and OUT- AC coupled and
terminated by 50 Ω to GND
VOD_SEL = Float (1000 mVpp)
DE = High
VCM-AC
Output Common-Mode Voltage
AC Common Mode Voltage
DE = 0 dB, VOD ≤ 1000 mVpp
VCM-DC
Output DC Common-Mode
Voltage
DC Common Mode Voltage
VIDLE
TX IDLE Output Voltage
VID = 0 mVp-p
MIN
0
SDD22 @ 4.1 GHz
RLTX-DIFF
TX return loss
TR/F
Transmitter Termination
Mismatch
UNIT
-9
dB
4.5
mV (rms)
1.1
SDD22 @ 11.1 GHz
-9
SCC22 @ 2.5 GHz
-22
DC, IFORCE = ± 100 µA
MAX
1.9
V
30
mV
-13
SCC22 @ 11.1 GHz
Delta_ZM
TYP
dB
-10
(3)
Transmitter Rise and Fall Time
Measurement points at 20% - 80%
TPD
Propagation Delay
Measured at 50% crossing
EQ = 0x00
TCCSK
Channel to Channel Skew
TPPSK
Part to Part Skew
2.5%
(4)
38
ps
230
ps
T = 25°C, VDD = 2.5 V
7
ps
T = 25°C, VDD = 2.5 V
20
ps
TTX-IDLE-SET-TO- Max time to transition to idle after
differential signal
IDLE
VIN = 1 Vpp, 10 Gbps
EQ = 0x00, DE = 0 dB
6.5
ns
TTX-IDLE-TO-
VIN = 1 Vpp, 10 Gbps
EQ = 0x00, DE = 0 dB
3.2
ns
3.3
ns
0.3
ps (rms)
0.09
UI
DIFF-DATA
TENV_DISTORT
Max time to transition to valid
differential signal after idle
Active OOB timing distortion,
input active time vs. output active
time
OUTPUT JITTER SPECIFICATIONS (5)
RJ
Random Jitter
DJ1
Deterministic Jitter
No Media
Source Amplitude = 700 mVpp,
PRBS15 pattern,
10.3125 Gbps
VOD = Default, EQ = minimum,
DE = 0 dB
EQUALIZATION
DJE1
Residual Deterministic Jitter
10.3125 Gbps
8 meter 30AWG Cable on Input
Source = 700 mVpp, PRBS15 pattern
EQ = 0x0F
0.27
UI
DJE2
Residual Deterministic Jitter
10.3125 Gbps
30" 4-mil FR4 on Inputs
Source = 700 mVpp, PRBS15 pattern
EQ = 0x16
0.17
UI
Residual Deterministic Jitter
10.3125 Gbps
10” 4 mil stripline FR4 on Outputs
Source = 700 mVpp, PRBS15 pattern
EQ = Min, VOD = 1200 mVpp,
DE = -3.5 dB
0.13
UI
DE-EMPHASIS
DJD1
(3)
(4)
(5)
8
Force ±100 µA on output, measure ΔV on the Output and calculate impedance. Mismatch is the percentage difference of OUTn+ and
OUTn- impedance driving the same logic state.
Default VOD used for testing. DE = -1.5 dB level used to compensate for fixture attenuation.
Typical jitter reported is determined by jitter decomposition software on the DSA8200 Oscilloscope.
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7.5 Electrical Characteristics — Serial Management Bus Interface
Over recommended operating supply and temperature ranges unless other specified.
PARAMETER
SERIAL BUS INTERFACE DC SPECIFICATIONS
TEST CONDITIONS
MIN
TYP
MAX
UNIT
(1)
VIL
Data, Clock Input Low Voltage
VIH
Data, Clock Input High Voltage
IPULLUP
Current Through Pull-Up Resistor
or Current Source
VDD
Nominal Bus Voltage
ILEAK-Bus
Input Leakage Per Bus Segment
See
(2)
CI
Capacitance for SDA and SCL
See
(2) (3) (4)
RTERM
External Termination Resistance
Pullup VDD = 3.3 V, See
pull to VDD = 2.5V ± 5% OR 3.3V ±
Pullup VDD = 2.5 V, See
10%
2.1
High Power Specification
0.8
V
3.6
V
4
mA
2.375
3.6
V
-200
+200
µA
10
pF
(2) (3) (5)
(2) (3) (5)
2000
Ω
1000
Ω
SERIAL BUS INTERFACE TIMING SPECIFICATIONS
FSMB
Bus Operating Frequency
TBUF
Bus Free Time Between Stop and
Start Condition
THD:STA
Hold time after (Repeated) Start
Condition. After this period, the
first clock is generated.
ENSMB = VDD (Slave Mode)
ENSMB = Float (Master Mode)
(1)
280
400
400
kHz
520
kHz
1.3
µs
0.6
µs
At IPULLUP, Max
TSU:STA
Repeated Start Condition Setup
Time
0.6
µs
TSU:STO
Stop Condition Setup Time
0.6
µs
THD:DAT
Data Hold Time
0
ns
TSU:DAT
Data Setup Time
100
ns
TLOW
Clock Low Period
1.3
µs
THIGH
Clock High Period
See
(6)
50
µs
300
ns
0.6
tF
Clock/Data Fall Time
See
(6)
tR
Clock/Data Rise Time
See
(6)
300
ns
tPOR
Time in which a device must be
operational after power-on reset
See
(4) (6)
500
ms
(1)
(2)
(3)
(4)
(5)
(6)
EEPROM interface requires 1 MHz capable EEPROM device.
Recommended value.
Recommended maximum capacitance load per bus segment is 400 pF.
Ensured by design and characterization. Parameter not tested in production.
Maximum termination voltage should be identical to the device supply voltage.
Compliant to SMBus 2.0 physical layer specification. See System Management Bus (SMBus) Specification Version 2.0, section 3.1.1
SMBus common AC specifications for details.
7.6 Timing Requirements — LOS and ENABLE / DISABLE Timing
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TLOS_OFF
Input IDLE to Active
RX_LOS response time
See
(1)
0.035
µs
TLOS_ON
Input Active to IDLE
RX_LOS response time
See
(1)
0.4
µs
TOFF
TX Disable assert Time
TX_DIS = High to Output OFF
See
(1)
0.005
µs
TON
TX Disable negateTime
TX_DIS = Low to Output ON
See
(1)
0.150
µs
TLP_EXIT
Auto Low Power Exit
ALP to Normal Operation
See
(1)
150
ns
TLP_ENTER
Auto Low Power Enter
Normal Operation to Auto Low Power
See
(1)
100
µs
(1)
Parameter not tested in production.
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80%
80%
VOD = [Out+ - Out-]
0V
20%
20%
tRISE
tFALL
Figure 1. Output Rise and Fall Transition Times
IN
0V
tPLHD
OUT
tPHLD
0V
Figure 2. Propagation Delay Timing Diagram
+
IN
0V
DATA
tIDLE-DATA
tDATA-IDLE
+
OUT
0V
DATA
IDLE
IDLE
Figure 3. Transmit Idle-Data and Data-Idle Response Time
tLOW
tR
tHIGH
SCL
tHD:STA
tBUF
tHD:DAT
tF
tSU:STA
tSU:DAT
tSU:STO
SDA
SP
ST
SP
ST
Figure 4. SMBus Timing Parameters
10
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7.7 Typical Characteristics
The following data was collected at 25°C.
100
60
90
70
56
3.3V Mode
Supply Current (mA)
Supply Current (mA)
80
60
50
40
30
2.5V Mode
20
52
2.5V Mode
48
44
10
0
700
40
800 900 1000 1100 1200 1300
Output Voltage (mVpp)
2.0
2.2
2.4
2.6
2.8
Supply Voltage (V)
3.0
VOD = 700 mVpp
Figure 5. Supply Current vs. Output Voltage Setting
Figure 6. Supply Current vs. Supply Voltage
1500
Output Voltage (mVpp)
1400
1300
1200
1100
1000
900
800
700
600
500
0
1
2
3
4
VOD Level
5
6
7
Figure 7. Output Voltage vs. Output Voltage Setting
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8 Detailed Description
8.1 Overview
The DS100BR111 is a high performance bidirectional 1-lane repeater optimized for 10G-KR and SAS/SATA
operation, where its programmable equalization and de-emphasis compensate for lossy FR-4 printed circuit
board backplanes or balanced cables. The DS100BR111 operates in 3 modes: Pin Control Mode (ENSMB = 0),
SMBus Slave Mode (ENSMB = 1), and SMBus Master Mode (ENSMB = Float) to load register information from
external EEPROM.
Each channel has a signal detector circuit that monitors the input signal amplitude. When the input signal level is
below the detector's de-assert level, the output is disabled. When input signal level exceeds the detector's assert
level, the output is enabled. The signal detector circuit is used to support the OOB signaling used in SAS and
SATA.
8.2 Functional Block Diagram
A Channel
Term
Signal
Detect
INA+
OUTA+
Predriver
EQ
INA-
Driver
OUTA-
ENSMB
EQA[1:0]
DEMA
VOD_SEL
READEN
DONE
AD[3:0]
SCL
SDA
Internal voltage
regulator
Digital Core and SMBus Registers
TX_DIS
VDD_SEL
VIN
B Channel
ENSMB
EQB[1:0]
DEMB
VOD_SEL
Signal
Detect
OUTB+
Driver
OUTB-
Predriver
Term
INB+
EQ
INB-
Note: This diagram is representative of device signal flow only.
12
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8.3 Feature Description
8.3.1 4-Level Control Pin Settings
The 4-level input pins use a resistor divider to set the four valid control levels and provide a wider range of
control settings when ENSMB = 0. There is an internal 30-kΩ pull-up and a 60-kΩ pull-down connected to the
package pin. These resistors, together with the external resistor connection, combine to achieve the desired
voltage level. By using the 1-kΩ pull-down, 20-kΩ pull-down, no connect, or 1-kΩ pull-up, the optimal voltage
levels for each of the four input states are achieved as shown in Table 1.
Table 1. 4–Level Control Pin Settings Table
RESULTING PIN VOLTAGE
LEVEL
SETTING
3.3 V MODE
0
Tie 1 kΩ to GND
0.10 V
2.5 V MODE
0.08 V
R
Tie 20 kΩ to GND
1/3 x VIN
1/3 x VDD
F
Float (leave pin open)
2/3 x VIN
2/3 x VDD
1
Tie 1 kΩ to VIN or VDD
VIN - 0.05 V
VDD - 0.04 V
Typical 4-Level Input Thresholds:
• Internal Threshold between 0 and R = 0.2 * VIN or VDD
• Internal Threshold between R and F = 0.5 * VIN or VDD
• Internal Threshold between F and 1 = 0.8 * VIN or VDD
In order to minimize the startup current associated with the integrated 2.5-V regulator, the 1-kΩ pull-up / pulldown resistors are recommended. If several four level inputs require the same setting, it is possible to combine
two or more 1-kΩ resistors into a single lower value resistor. As an example, combining two inputs with a single
500-Ω resistor is a valid way to save board space.
8.4 Device Functional Modes
8.4.1 Pin Control Mode
When in Pin Mode (ENSMB = 0), equalization, de-emphasis, and VOD (output amplitude) can be selected via
external pin control for both the A-channel and B-channel. Equalization and de-emphasis can be programmed by
pin selection for each side independently. For further device control, the VOD_SEL and MODE pins are available
to improve DS100BR111 performance depending on design applications. The receiver electrical idle detect
threshold is also adjustable via the SD_TH pin. Pin control mode is ideal in situations where neither MCU or
EEPROM is available to access the device via SMBus SDA and SCL lines.
8.4.2 SMBus Slave Mode
When in Slave SMBus Mode (ENSMB = 1), equalization, de-emphasis, and VOD (output amplitude) are all
programmable on an individual channel basis. Upon assertion of ENSMB, the EQx, DEMx, and VODx settings
are controlled by SMBus immediately. It is important to note that SMBus settings can only be changed from their
defaults after asserting Register Enable by setting Reg 0x06[3] = 1. The EQx, DEMx, and VODx pins are
subsequently converted to AD0-AD3 SMBus address inputs. The other external control pins (TX_DIS, MODE,
and SD_TH) remain active unless their respective registers are written to and the appropriate override bit is set.
If the user overrides a pin control, the input voltage level of that control pin is ignored until ENSMB is driven low
(Pin Mode). In the event that channels are powered down via the TX_DIS pin, register setting states are not
affected.
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Device Functional Modes (continued)
Table 2. Signal Detect Threshold Level (1)
(1)
LEVEL
SD_TH (Pin 14)
SMBus REG BIT
[3:2] and [1:0]
TYPICAL ASSERT LEVEL
(mVpp)
TYPICAL DE-ASSERT LEVEL
(mVpp)
1
0
10
210
150
2
R
01
160
100
3
F (Default)
00
180
110
4
1
11
190
130
Typical assert and de-assert levels were measured with VDD = 2.5 V, 25°C, and 010101 pattern at 8 Gbps.
8.4.3 SMBus Master Mode
When in SMBus Master Mode (ENSMB = Float), the equalization, de-emphasis, and VOD (output amplitude) for
multiple devices can be loaded via external EEPROM. By asserting a Float condition on the ENSMB pin, an
external EEPROM writes register settings to each device in accordance with its SMBus slave address. The
settings programmable by external EEPROM provide only a subset of all the register bits available via SMBus
Slave Mode, and the bit-mapping between SMBus Slave Mode registers and EEPROM addresses can be
referenced in Table 6. Once the EEPROM successfully finishes loading each device's register settings, the
device reverts back to SMBus Slave Mode and releases SDA and SCL control to an external master MCU. If the
EEPROM fails to load settings to a particular device, for example due to an invalid or blank hex file, the device
waits indefinitely in an unknown state where access to the SMBus lines is not possible.
8.4.4 Signal Conditioning Settings
Equalization, de-emphasis, and VOD settings accessible via the pin controls are chosen to meet the needs of
most high speed applications. For additional levels and flexibility in EQ, de-emphasis, and VOD programming,
these settings can be controlled via the SMBus registers. Each control pin input has a total of four possible
voltage level settings. In pin mode, Table 3 shows the 16 EQ settings available, and Table 4 shows the 16 deemphasis and VOD combination settings available. Note that when in pin mode, only 16 of a possible 256 EQ
programmable levels can be accessed by setting the EQx[1:0] pins. In addition, each pin setting applied to the
VOD_SEL and DEMx pin input programs a fixed combination of VOD and de-emphasis. In order to access all
256 EQ levels and control both VOD and de-emphasis settings independently, SMBus register access must be
used.
Table 3. Equalizer Settings
EQUALIZATION BOOST RELATIVE TO DC
LEVEL
EQA1
EQB1
1
0
0
0000 0000 = 0x00
2.5
2
0
R
0000 0001 = 0x01
6.5
FR4 5 inch trace
3
0
F
0000 0010 = 0x02
9
FR4 10 inch trace
4
0
1
0000 0011 = 0x03
11.5
FR4 15 inch trace
5
R
0
0000 0111 = 0x07
14
FR4 20 inch trace
6
R
R
0001 0101 = 0x15
15
FR4 25 inch trace
7
R
F
0000 1011 = 0x0B
17
FR4 25 inch trace
8
R
1
0000 1111 = 0x0F
19
7m 30 AWG Cable
9
F
0
0101 0101 = 0x55
20
FR4 30 inch trace
(1)
14
EQA0
EQB0
EQ — 8 bits [7:0]
dB BOOST at 5 GHz
SUGGESTED MEDIA (1)
FR4 < 5 inch trace
Settings are approximate and will change based on PCB material, trace dimensions, and driver waveform characteristics. Optimal EQ
settings should be determined via simulation and prototype verification.
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Table 3. Equalizer Settings (continued)
EQUALIZATION BOOST RELATIVE TO DC
LEVEL
EQA1
EQB1
EQA0
EQB0
EQ — 8 bits [7:0]
dB BOOST at 5 GHz
SUGGESTED MEDIA (1)
10
F
R
0001 1111 = 0x1F
23
8m 30 AWG Cable
FR4 35 inch trace
11
F
F
0010 1111 = 0x2F
25
10m 30 AWG Cable
12
F
1
0011 1111 = 0x3F
27
13
1
0
1010 1010 = 0xAA
30
14
1
R
0111 1111 = 0x7F
31
15
1
F
1011 1111 = 0xBF
33
16
1
1
1111 1111 = 0xFF
34
10m to 12m, Cable
Table 4. De-Emphasis and Output Voltage Settings (1)
DEMA/B
SMBus REGISTER
DEM Level
SMBus REGISTER
VOD LEVEL
VOD (mVpp)
0
0
000
000
700
0
0
F
010
000
700
-3.5
0
R
011
000
700
-6
4
0
1
101
000
700
-9
5
F
0
000
011
1000
0
6
F
F
010
011
1000
-3.5
7
F
R
011
011
1000
-6
8
F
1
101
011
1000
-9
9
R
0
000
101
1200
-0
10
R
F
010
101
1200
-3.5
11
R
R
011
101
1200
-6
12
R
1
101
101
1200
-9
13
1
0
000
100
1100
0
14
1
F
001
100
1100
-1.5
15
1
R
001
110
1300
-1.5
16
1
1
010
110
1300
-3.5
LEVEL
VOD_SEL (2) (3)
1
2
3
(1)
(2)
(3)
DEM (dB)
The DS100BR111 VOD for OUTPUT A is limited to 700 mVpp in pin mode (ENSMB=0). With ENSMB = 1 or Float, the VOD for
OUTPUT A can be adjusted with SMBus register 0x23 [4:2] as shown in Table 9.
When VOD_SEL is in the Logic 1 state (1 kΩ resistor to VIN or VDD), the DS100BR111 will support 10G-KR back-channel
communication using pin control.
In SMBus Mode, if VOD_SEL is in the Logic 1 state (1 kΩ resistor to VIN or VDD), the DS100BR111 AD0-AD3 pins are internally forced
to 0.
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8.5 Programming
8.5.1 System Management Bus (SMBus) and Configuration Registers
The System Management Bus interface is compatible with the SMBus 2.0 physical layer specification. Tie
ENSMB = 1 kΩ to VDD (2.5 V mode) or VIN (3.3 V mode) to enable SMBus Slave Mode and allow access to the
configuration registers.
The DS100BR111 uses AD[3:0] inputs in both SMBus Modes. These AD[3:0] pins are the user set SMBus slave
address inputs and have internal pull-downs. Based on the SMBus 2.0 specification, the DS100BR111 has a 7bit slave address. The LSB is set to 0'b (for a WRITE). When AD[3:0] pins are left floating or pulled low, AD[3:0]
= 0000'b, and the device default address byte is 0xB0. The device supports up to 16 address bytes, as shown in
Table 5.
Table 5. Device Slave Address Bytes
AD[3:0] SETTINGS
FULL SLAVE ADDRESS BYTE
(7-Bit ADDRESS + WRITE BIT)
7-Bit SLAVE ADDRESS (HEX)
0000
B0
58
0001
B2
59
0010
B4
5A
0011
B6
5B
0100
B8
5C
0101
BA
5D
0110
BC
5E
0111
BE
5F
1000
C0
60
1001
C2
61
1010
C4
62
1011
C6
63
1100
C8
64
1101
CA
65
1110
CC
66
1111
CE
67
The SDA and SCL pins are 3.3 V tolerant, but are not 5 V tolerant. An external pull-up resistor is required on the
SDA and SCL line. The resistor value can be from 2 kΩ to 5 kΩ depending on the voltage, loading, and speed.
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8.5.2 Transfer Of Data Via the SMBus
During normal operation, the data on SDA must be stable during the time when SCL is High.
There are three unique states for the SMBus:
• START: A High-to-Low transition on SDA while SCL is High indicates a message START condition.
• STOP: A Low-to-High transition on SDA while SCL is High indicates a message STOP condition.
• IDLE: If SCL and SDA are both High for a time exceeding tBUF from the last detected STOP condition or if
they are High for a total exceeding the maximum specification for tHIGH, then the bus will transfer to the IDLE
state.
8.5.3 SMBus Transactions
The device supports WRITE and READ transactions. See Table 9 for register address, type (Read/Write, Read
Only), default value, and function information.
8.5.4 Writing a Register
To
1.
2.
3.
4.
5.
6.
7.
write a register, the following protocol is used (see SMBus 2.0 specification):
The Host drives a START condition, the 7-bit SMBus address, and a “0” indicating a WRITE.
The Device (Slave) drives the ACK bit (“0”).
The Host drives the 8-bit Register Address.
The Device drives an ACK bit (“0”).
The Host drive the 8-bit data byte.
The Device drives an ACK bit (“0”).
The Host drives a STOP condition.
Once the WRITE transaction is completed, the bus goes IDLE and communication with other SMBus devices
may now occur.
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8.5.5 Reading a Register
To read a register, the following protocol is used (see SMBus 2.0 specification):
1. The Host drives a START condition, the 7-bit SMBus address, and a “0” indicating a WRITE.
2. The Device (Slave) drives the ACK bit (“0”).
3. The Host drives the 8-bit Register Address.
4. The Device drives an ACK bit (“0”).
5. The Host drives a START condition.
6. The Host drives the 7-bit SMBus Address, and a “1” indicating a READ.
7. The Device drives an ACK bit “0”.
8. The Device drives the 8-bit data value (register contents).
9. The Host drives a NACK bit “1”indicating end of the READ transfer.
10. The Host drives a STOP condition.
Once the READ transaction is completed, the bus goes IDLE and communication with other SMBus devices may
now occur.
Please see Table 9 for more information.
8.5.6 EEPROM Programming
The DS100BR111 supports reading directly from an external EEPROM device by implementing SMBus Master
mode. When used in SMBus Master mode, the DS100BR111 will read directly from a specific location in the
external EEPROM. When designing a system that uses external EEPROM, the following guidelines should be
followed:
• Set the DS100BR111 in SMBus Master Mode.
– ENSMB (Pin 3) = Float
• The external EEPROM device must support 1 MHz operation.
• The external EEPROM device address byte must be 0xA0.
• Set the AD[3:0] inputs for SMBus address byte. When AD[3:0] = 0000'b, the device address byte is 0xB0.
• The device address can be set with the use of the AD[3:0] input up to 16 different addresses. Use the
example below to set each of the SMBus addresses.
– AD[3:0] = 0001'b, the device address byte is 0xB2
– AD[3:0] = 0010'b, the device address byte is 0xB4
– AD[3:0] = 0011'b, the device address byte is 0xB6
– AD[3:0] = 0100'b, the device address byte is 0xB8
• The master implementation in the DS100BR111 supports multiple devices reading from one EEPROM. When
tying multiple devices to the SDA and SCL pins, use these guidelines:
– Use adjacent SMBus addresses for the 4 devices
– Use a pull-up resistor on SDA; value = 4.7 kΩ
– Use a pull-up resistor on SCL: value = 4.7 kΩ
– Daisy-chain READEN (Pin 17) and DONE (Pin 18) from one device to the next device in the sequence.
1. Tie READEN of the 1st device in the chain (U1) to GND
2. Tie DONE of U1 to READEN of U2
3. Tie DONE of U2 to READEN of U3
4. Tie DONE of U3 to READEN of U4
5. Optional: Tie DONE of U4 to a LED to show each of the devices have been loaded successfully
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8.5.6.1 Master EEPROM Programming
Below is an example of a 2 kbits (256 x 8-bit) EEPROM in hex format for the DS100BR111 device. The first 3
bytes of the EEPROM always contain a header common and necessary to control initialization of all devices
connected to the same SMBus line. There is a CRC enable flag to enable or disable CRC checking. There is a
MAP bit to flag the presence of an address map that specifies the configuration data start address in the
EEPROM. If the MAP bit is not present, the configuration data start address immediately follows the 3-byte base
header. A bit to indicate an EEPROM size > 256 bytes is necessary to address the EEPROM properly. There are
37 bytes of data size for each DS100BR111 device. For more details about EEPROM programming and Master
mode, refer to SNLA228.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
:1000000000002000000407002FED4002FED4002FC4
:10001000AD4002FAD400005F568005F5A8005F5AE9
:100020008005F5A800005454F100000000000000A8
:1000300000000000000000000000000000000000C0
:1000400000000000000000000000000000000000B0
:1000500000000000000000000000000000000000A0
:100060000000000000000000000000000000000090
:100070000000000000000000000000000000000080
:100080000000000000000000000000000000000070
:100090000000000000000000000000000000000060
:1000A0000000000000000000000000000000000050
:1000B0000000000000000000000000000000000040
:1000C0000000000000000000000000000000000030
:1000D0000000000000000000000000000000000020
:1000E0000000000000000000000000000000000010
:1000F0000000000000000000000000000000000000
:00000001FF
CRC-8 based on 40 bytes of
data in this shaded area
Insert the CRC value here
MAX EEPROM Burst = 32
CRC Polynomial = 0x07
Figure 8. Typical EEPROM Data Set
NOTE
The maximum EEPROM size supported is 8 kbits (1024 x 8 bits).
The CRC-8 calculation is performed for each device on the first 3 bytes of header information plus the 37 bytes
of data for the DS100BR111 or 40 bytes in total. The result of this calculation is placed immediately after the
DS100BR111 data in the EEPROM which ends with "5454". The CRC-8 in the DS100BR111 uses a polynomial
= x8 + x2 + x + 1.
There are two pins that provide unique functions in SMBus Master mode:
• DONE
• READEN
When the DS100BR111 is powered up in SMBus Master mode, it reads its configuration from the external
EEPROM when the READEN pin goes low. When the DS100BR111 is finished reading its configuration from the
external EEPROM, it drives the DONE pin low. In applications where there is more than one DS100BR111 on
the same SMBus, bus contention can result if more than one DS100BR111 tries to take control of the SMBus at
the same time. The READEN and DONE pins prevent this bus contention. The system should be designed so
that the READEN pin from one DS100BR111 in the system is driven low on power-up. This DS100BR111 will
take command of the SMBus on power-up and will read its initial configuration from the external EEPROM. When
the first DS100BR111 is finished reading its configuration, it will drive the DONE pin low. This pin should be
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connected to the READEN pin of another DS100BR111. When this second DS100BR111 senses its READEN
pin driven low, it will take command of the SMBus and read its initial configuration from the external EEPROM,
after which it will set its DONE pin low. By connecting the DONE pin of each DS100BR111 to the READEN pin of
the next DS100BR111, each DS100BR111 can read its initial configuration from the EEPROM without causing
bus contention.
EEPROM
GND
GND
GND
3.3V
AD0
SCL
AD2
One or both of these lines
should float for EEPROM
larger than 256 bytes.
SDA
AD1
Note: Set AD[3:0] of each DS100BR111 to unique SMBus Address.
SDA
SCL
SCL
SDA
ENSMB
AD2
AD3
4
3
2
1
TX_DIS
5
6
AD3
23
8
23
INA-
22
VDD
AD1
9
22
VDD
AD1
9
22
VDD
21
VDD
AD0
10
21
VDD
AD0
10
21
VDD
INB+
11
20
OUTB+
INB+
11
20
OUTB+
INB-
12
19
OUTB-
INB-
12
19
OUTB-
16
17
18
VDD_SEL
READEN
DONE
18
15
VIN
DONE
14
SD_TH
17
13
LOS
READEN
18
DONE
16
17
READEN
INA+
GND
VDD_SEL
OUTB-
15
19
VIN
12
14
INB-
13
OUTB+
SMBUS AND
CONTROL
LOS
20
SMBUS AND
CONTROL
SD_TH
AD3
1
AD2
AD2
2
2
24
11
16
1
7
OUTA-
INB+
VDD_SEL
ENSMB
OUTA+
INA-
10
15
3
INA+
23
AD0
VIN
SCL
24
8
9
14
SDA
7
OUTA-
AD1
13
4
OUTA+
INA-
8
LOS
TX_DIS
INA+
7
OUTA-
SD_TH
FLOAT
24
OUTA+
SMBUS AND
CONTROL
5
ENSMB
3
FLOAT
6
SCL
SDA
4
TX_DIS
5
From External
SMBus Master
6
FLOAT
Figure 9. Typical Multi-device EEPROM Connection Diagram
8.5.6.2 EEPROM Address Mapping
A detailed EEPROM Address Mapping for a single device is shown in Table 6. For instances where multiple
devices are written to EEPROM, the device starting address definitions align starting with Byte 0x03. A register
map overview for a multi-device EEPROM address map is shown in Table 7.
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SNLS338F – JANUARY 2011 – REVISED NOVEMBER 2014
Table 6. Single Device with Default Value
EEPROM Address Byte
Description
Default
Value
0x00
0x00
0x01
Description
Default
Value
0x02
0x00
BIT 6
BIT 5
SMBus Register
BIT 3
BIT 2
BIT 1
BIT 0
Address Map
Present
EEPROM > 256
Bytes
Reserved
DEVICE
COUNT[3]
DEVICE
COUNT[2]
DEVICE
COUNT[1]
DEVICE
COUNT[0]
0
0
0
0
0
0
0
0
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
0
0
0
0
0
0
0
0
Max EEPROM
Burst size[7]
Max EEPROM
Burst size[6]
Max EEPROM
Burst size[5]
Max EEPROM
Burst size[4]
Max EEPROM
Burst size[3]
Max EEPROM
Burst size[2]
Max EEPROM
Burst size[1]
Max EEPROM
Burst size[0]
0
0
0
0
0
0
0
0
Reserved
Reserved
Sel_LOS
Reserved
Reserved
Cont_talk_EN_CH Cont_talk_EN_CH
Reserved
A
B
Description
BIT 4
CRC_EN
0x00
Description
Default
Value
BIT 7
0x01[6]
0x01[5]
0x01[4]
0x01[3]
0x01[2]
0x01[1]
0x01[0]
0
0
0
0
0
0
0
0
Description
Ovrd_LOS
LOS_Value
PWDN_Inputs
PWDN_Osc
Reserved
eSATA En CHA
eSATA En CHB
Ovrd TX_DIS
SMBus Register
0x02[5]
0x02[4]
0x02[3]
0x02[2]
0x02[0]
0x04[7]
0x04[6]
0x04[5]
0
0
0
0
0
0
0
0
TX_DIS CHA
TX_DIS CHB
Reserved
EQ Stage 4 CHB
EQ Stage 4 CHA
Reserved
Ovrd IDLE_TH
Reserved
0x04[4]
0x04[3]
0x04[2]
0x04[1]
0x04[0]
0x06[4]
0x08[6]
0x08[5]
0
0
0
0
0
1
0
0
Description
Ovrd IDLE
Reserved
Ovrd Out_Mode
Ovrd DEM
Reserved
Reserved
Reserved
Reserved
SMBus Register
0x08[4]
0x08[3]
0x08[2]
0x08[1]
0x08[0]
0x0B[6]
0x0B[5]
0x0B[4]
0
0
0
0
0
1
1
1
Description
Reserved
Reserved
Reserved
Reserved
CHA_Idle_Auto
CHA_Idle_Sel
Reserved
Reserved
SMBus Register
0x0B[3]
0x0B[2]
0x0B[1]
0x0B[0]
0x0E[5]
0x0E[4]
0x0E[3]
0x0E[2]
0
0
0
0
0
0
0
0
Default
Value
Default
Value
0x03 0x01[7]
0x00
0x04
0x00
Description
SMBus Register
Default
Value
Default
Value
Default
Value
0x05
0x04
0x06
0x07
0x00
0x07
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Table 6. Single Device with Default Value (continued)
EEPROM Address Byte
BIT 7
BIT 6
BIT 5
BIT 4
BIT 3
BIT 2
Description
CHA_EQ[7]
CHA_EQ[6]
CHA_EQ[5]
CHA_EQ[4]
CHA_EQ[3]
CHA_EQ[2]
CH0_EQ[1]
CH0_EQ[0]
SMBus Register
0x0F[7]
0x0F[6]
0x0F[5]
0x0F[4]
0x0F[3]
0x0F[2]
0x0F[1]
0x0F[0]
0
0
1
0
1
1
1
1
Description
CHA_Sel SCP
CHA_Out Mode
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
SMBus Register
0x10[7]
0x10[6]
0x10[5]
0x10[4]
0x10[3]
0x10[2]
0x10[1]
0x10[0]
1
1
1
0
1
1
0
1
Description
CHA_DEM[2]
CHA_DEM[1]
CHA_DEM[0]
Reserved
CHA_Idle_ThA[1]
CHA_Idle_ThA[0]
CHA_Idle_ThD[1]
CHA_Idle_ThD[0]
SMBus Register
0x11[2]
0x11[1]
0x11[0]
0x12[7]
0x12[3]
0x12[2]
0x12[1]
0x12[0]
0
1
0
0
0
0
0
0
CHB_Idle_Auto
CHB_Idle_Sel
Reserved
Reserved
CHB_EQ[7]
CHB_EQ[6]
CHB_EQ[5]
CHB_EQ[4]
0x15[5]
0x15[4]
0x15[3]
0x15[2]
0x16[7]
0x16[6]
0x16[5]
0x16[4]
0
0
0
0
0
0
1
0
Description
CHB_EQ[3]
CHB_EQ[2]
CHB_EQ[1]
CHB_EQ[0]
CHB_Sel SCP
CHB_Out Mode
Reserved
Reserved
SMBus Register
0x16[3]
0x16[2]
0x16[1]
0x16[0]
0x17[7]
0x17[6]
0x17[5]
0x17[4]
1
1
1
1
1
1
1
0
Description
Reserved
Reserved
Reserved
Reserved
CHB_DEM[2]
CHB_DEM[1]
CHB_DEM[0]
Reserved
SMBus Register
0x17[3]
0x17[2]
0x17[1]
0x17[0]
0x18[2]
0x18[1]
0x18[0]
0x19[7]
1
1
0
1
0
1
0
0
Description
CHB_Idle_ThA[1]
CHB_Idle_ThA[0]
CHB_Idle_ThD[1]
CHB_Idle_ThD[0]
Reserved
Reserved
Reserved
Reserved
SMBus Register
0x19[3]
0x19[2]
0x19[1]
0x19[0]
0x1C[5]
0x1C[4]
0x1C[3]
0x1C[2]
0
0
0
0
0
0
0
0
Description
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
SMBus Register
0x1D[7]
0x1D[6]
0x1D[5]
0x1D[4]
0x1D[3]
0x1D[2]
0x1D[1]
0x1D[0]
0
0
1
0
1
1
1
1
Default
Value
0x08
0x2F
Default
Value
0x09
0xED
Default
Value
0x0A
0x40
Description
SMBus Register
Default
Value
0x02
Default
Value
0x0D
0xD4
Default
Value
22
0x0C
0xFE
Default
Value
Default
Value
0x0B
0x0E
0x00
0x2F
0x0F
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BIT 1
BIT 0
Copyright © 2011–2014, Texas Instruments Incorporated
Product Folder Links: DS100BR111
DS100BR111
www.ti.com
SNLS338F – JANUARY 2011 – REVISED NOVEMBER 2014
Table 6. Single Device with Default Value (continued)
EEPROM Address Byte
BIT 7
BIT 6
BIT 5
BIT 4
BIT 3
BIT 2
BIT 1
BIT 0
Description
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
SMBus Register
0x1E[7]
0x1E[6]
0x1E[5]
0x1E[4]
0x1E[3]
0x1E[2]
0x1E[1]
0x1E[0]
1
0
1
0
1
1
0
1
Description
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
SMBus Register
0x1F[2]
0x1F[1]
0x1F[0]
0x20[7]
0x20[3]
0x20[2]
0x20[1]
0x20[0]
0
1
0
0
0
0
0
0
Description
Reserved
CHA_VOD[2]
CHA_VOD[1]
CHA_VOD[0]
Reserved
Reserved
Reserved
Reserved
SMBus Register
0x23[5]
0x23[4]
0x23[3]
0x23[2]
0x24[7]
0x24[6]
0x24[5]
0x24[4]
0
0
0
0
0
0
1
0
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
0x24[3]
0x24[2]
0x24[1]
0x24[0]
0x25[7]
0x25[6]
0x25[5]
0x25[4]
1
1
1
1
1
0
1
0
Description
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
SMBus Register
0x25[3]
0x25[2]
0x25[1]
0x25[0]
0x26[2]
0x26[1]
0x26[0]
0x27[7]
1
1
0
1
0
1
0
0
Description
Reserved
Reserved
Reserved
Reserved
Ovrd_Fast IDLE
hi_idle_th_CHA
hi_idle_th_CHB
fast_idle_CHA
SMBus Register
0x27[3]
0x27[2]
0x27[1]
0x27[0]
0x28[6]
0x28[5]
0x28[4]
0x28[3]
0
0
0
0
0
0
0
0
Description
fast_idle_CHB
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
SMBus Register
0x28[2]
0x28[1]
0x28[0]
0x2B[5]
0x2B[4]
0x2B[3]
0x2B[2]
0x2C[7]
0
0
0
0
0
0
0
0
Description
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
SMBus Register
0x2C[6]
0x2C[5]
0x2C[4]
0x2C[3]
0x2C[2]
0x2C[1]
0x2C[0]
0x2D[7]
0
1
0
1
1
1
1
1
Default
Value
Default
Value
Default
Value
0x10
0xAD
0x11
0x40
0x12
0x02
Description
SMBus Register
Default
Value
Default
Value
Default
Value
Default
Value
Default
Value
0x13
0xFA
0x14
0xD4
0x15
0x00
0x16
0x00
0x5F
0x17
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Table 6. Single Device with Default Value (continued)
EEPROM Address Byte
BIT 7
BIT 6
BIT 5
BIT 4
BIT 3
BIT 2
BIT 1
BIT 0
Description
Reserved
Reserved
CHB_VOD[2]
CHB_VOD[1]
CHB_VOD[0]
Reserved
Reserved
Reserved
SMBus Register
0x2D[6]
0x2D[5]
0x2D[4]
0x2D[3]
0x2D[2]
0x2D[1]
0x2D[0]
0x2E[2]
0
1
0
1
1
0
1
0
Description
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
SMBus Register
0x2E[1]
0x2E[0]
0x2F[7]
0x2F[3]
0x2F[2]
0x2F[1]
0x2F[0]
0x32[5]
1
0
0
0
0
0
0
0
Description
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
SMBus Register
0x32[4]
0x32[3]
0x32[2]
0x33[7]
0x33[6]
0x33[5]
0x33[4]
0x33[3]
0
0
0
0
0
1
0
1
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
0x33[2]
0x33[1]
0x33[0]
0x34[7]
0x34[6]
0x34[5]
0x34[4]
0x34[3]
1
1
1
1
0
1
0
1
Description
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
SMBus Register
0x34[2]
0x34[1]
0x34[0]
0x35[2]
0x35[1]
0x35[0]
0x36[7]
0x36[3]
1
0
1
0
1
0
0
0
Description
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
SMBus Register
0x36[2]
0x36[1]
0x36[0]
0x39[5]
0x39[4]
0x39[3]
0x39[2]
0x3A[7]
0
0
0
0
0
0
0
0
Description
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
SMBus Register
0x3A[6]
0x3A[5]
0x3A[4]
0x3A[3]
0x3A[2]
0x3A[1]
0x3A[0]
0x3B[7]
0
1
0
1
1
1
1
1
Description
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
SMBus Register
0x3B[6]
0x3B[5]
0x3B[4]
0x3B[3]
0x3B[2]
0x3B[1]
0x3B[0]
0x3C[2]
0
1
0
1
1
0
1
0
Default
Value
0x18
0x5A
Default
Value
0x19
0x80
Default
Value
0x1A
0x05
Description
SMBus Register
Default
Value
0xF5
Default
Value
0x1D
0x00
Default
Value
24
0x1C
0xA8
Default
Value
Default
Value
0x1B
0x1E
0x5F
0x5A
0x1F
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SNLS338F – JANUARY 2011 – REVISED NOVEMBER 2014
Table 6. Single Device with Default Value (continued)
EEPROM Address Byte
BIT 7
BIT 6
BIT 5
BIT 4
BIT 3
BIT 2
BIT 1
BIT 0
Description
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
SMBus Register
0x3C[1]
0x3C[0]
0x3D[7]
0x3D[3]
0x3D[2]
0x3D[1]
0x3D[0]
0x40[5]
1
0
0
0
0
0
0
0
Description
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
SMBus Register
0x40[4]
0x40[3]
0x40[2]
0x41[7]
0x41[6]
0x41[5]
0x41[4]
0x41[3]
0
0
0
0
0
1
0
1
Description
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
SMBus Register
0x41[2]
0x41[1]
0x41[0]
0x42[7]
0x42[6]
0x42[5]
0x42[4]
0x42[3]
1
1
1
1
0
1
0
1
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
0x42[2]
0x42[1]
0x42[0]
0x43[2]
0x43[1]
0x43[0]
0x44[7]
0x44[3]
1
0
1
0
1
0
0
0
Description
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
SMBus Register
0x44[2]
0x44[1]
0x44[0]
0x47[3]
0x47[2]
0x47[1]
0x47[0]
0x48[7]
0
0
0
0
0
0
0
0
Description
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
SMBus Register
0x48[6]
0x4C[7]
0x4C[6]
0x4C[5]
0x4C[4]
0x4C[3]
0x4C[0]
0x59[0]
0
0
0
0
0
0
0
0
Description
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
SMBus Register
0x5A[7]
0x5A[6]
0x5A[5]
0x5A[4]
0x5A[3]
0x5A[2]
0x5A[1]
0x5A[0]
0
1
0
1
0
1
0
0
Description
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
SMBus Register
0x5B[7]
0x5B[6]
0x5B[5]
0x5B[4]
0x5B[3]
0x5B[2]
0x5B[1]
0x5B[0]
0
1
0
1
0
1
0
0
Default
Value
Default
Value
Default
Value
0x20
0x80
0x21
0x05
0x22
0xF5
Description
SMBus Register
Default
Value
Default
Value
Default
Value
Default
Value
Default
Value
0x23
0xA8
0x24
0x00
0x25
0x00
0x26
0x54
0x54
0x27
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Table 7. Multi-Device EEPROM Address Map Overview (1)
ADDR
BIT 7
BIT 6
BIT 5
BIT 4
BIT 3
BIT 2
BIT 1
BIT 0
0
CRC EN
Address Map
EEPROM > 256
Bytes
Reserved
COUNT[3]
COUNT[2]
COUNT[1]
COUNT[0]
1
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
2
EE Burst[7]
EE Burst[6]
EE Burst[5]
EE Burst[4]
EE Burst[3]
EE Burst[2]
EE Burst[1]
EE Burst[0]
Device 0
Info
3
CRC[7]
CRC[6]
CRC[5]
CRC[4]
CRC[3]
CRC[2]
CRC[1]
CRC[0]
4
EE AD0 [7]
EE AD0 [6]
EE AD0 [5]
EE AD0 [4]
EE AD0 [3]
EE AD0 [2]
EE AD0 [1]
EE AD0 [0]
Device 1
Info
5
CRC[7]
CRC[6]
CRC[5]
CRC[4]
CRC[3]
CRC[2]
CRC[1]
CRC[0]
6
EE AD1 [7]
EE AD1 [6]
EE AD1 [5]
EE AD1 [4]
EE AD1 [3]
EE AD1 [2]
EE AD1 [1]
EE AD1 [0]
Device 2
Info
7
CRC[7]
CRC[6]
CRC[5]
CRC[4]
CRC[3]
CRC[2]
CRC[1]
CRC[0]
8
EE AD2 [7]
EE AD2 [6]
EE AD2 [5]
EE AD2 [4]
EE AD2 [3]
EE AD2 [2]
EE AD2 [1]
EE AD2 [0]
Device 3
Info
9
CRC[7]
CRC[6]
CRC[5]
CRC[4]
CRC[3]
CRC[2]
CRC[1]
CRC[0]
10
EE AD3 [7]
EE AD3 [6]
EE AD3 [5]
EE AD3 [4]
EE AD3 [3]
EE AD3 [2]
EE AD3 [1]
EE AD3 [0]
Device 0
Addr 3
11
RES
RES
RES
RES
RES
Sel_LOS
RES
RES
Device 0
Addr 4
12
Ovrd_LOS
LOS_Value
PWDN Inp
PWDN OSC
RES
eSATA CHA
eSATA CHB
Ovrd TX_DIS
Device 0
Addr 38
46
RES
RES
RES
RES
RES
RES
RES
RES
Device 0
Addr 39
47
RES
RES
RES
RES
RES
RES
RES
RES
Device 1
Addr 3
48
RES
RES
RES
RES
RES
Sel_LOS
RES
RES
Device 1
Addr 4
49
Ovrd_LOS
LOS_Value
PWDN Inp
PWDN OSC
RES
eSATA CHA
eSATA CHB
Ovrd TX_DIS
Device 1
Addr 38
83
RES
RES
RES
RES
RES
RES
RES
RES
Device 1
Addr 39
84
RES
RES
RES
RES
RES
RES
RES
RES
Device 2
Addr 3
85
RES
RES
RES
RES
RES
Sel_LOS
RES
RES
Device 2
Addr 4
86
Ovrd_LOS
LOS_Value
PWDN Inp
PWDN OSC
RES
eSATA CHA
eSATA CHB
Ovrd TX_DIS
Header
(1)
26
(a)
(b)
(c)
(d)
CRC EN = 1; Address Map = 1
EEPROM > 256 Bytes = 0
COUNT[3:0] = 0011'b
Note: Multiple DS100BR111 devices may point at the same address space if they have identical programming values.
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DS100BR111
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SNLS338F – JANUARY 2011 – REVISED NOVEMBER 2014
Table 7. Multi-Device EEPROM Address Map Overview(1) (continued)
ADDR
BIT 7
BIT 6
BIT 5
BIT 4
BIT 3
BIT 2
BIT 1
BIT 0
Device 2
Addr 38
120
RES
RES
RES
RES
RES
RES
RES
RES
Device 2
Addr 39
121
RES
RES
RES
RES
RES
RES
RES
RES
Device 3
Addr 3
122
RES
RES
RES
RES
RES
Sel_LOS
RES
RES
Device 3
Addr 4
123
Ovrd_LOS
LOS_Value
PWDN Inp
PWDN OSC
RES
eSATA CHA
eSATA CHB
Ovrd TX_DIS
Device 3
Addr 38
157
RES
RES
RES
RES
RES
RES
RES
RES
Device 3
Addr 39
158
RES
RES
RES
RES
RES
RES
RES
RES
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Table 8. Multi DS100BR111 EEPROM Data
EEPROM
ADDRESS
ADDRESS
(HEX)
EEPROM
DATA
COMMENTS
0
00
0x43
1
01
0x00
2
02
0x08
EEPROM Burst Size
3
03
0x00
CRC not used
4
04
0x0B
Device 0 Address Location
5
05
0x00
CRC not used
6
06
0x30
Device 1 Address Location
7
07
0x00
CRC not used
8
08
0x30
Device 2 Address Location
9
09
0x00
CRC not used
10
0A
0x0B
Device 3 Address Location
11
0B
0x00
Begin Device 0 and Device 3 - Address Offset 3
12
0C
0x00
13
0D
0x04
14
0E
0x07
15
0F
0x00
16
10
0x2F
17
11
0xED
18
12
0x40
19
13
0x02
Default EQ CHB
20
14
0xFE
Default EQ CHB
21
15
0xD4
22
16
0x00
23
17
0x2F
24
18
0xAD
25
19
0x40
26
1A
0x02
27
1B
0xFA
28
1C
0xD4
29
1D
0x00
30
1E
0x00
31
1F
0x5F
32
20
0x5A
33
21
0x80
34
22
0x05
35
23
0xF5
36
24
0xA8
37
25
0x00
38
26
0x5F
39
27
0x5A
40
28
0x80
41
29
0x05
42
2A
0xF5
43
2B
0xA8
44
2C
0x00
45
2D
0x00
46
2E
0x54
28
CRC_EN = 0, Address Map = 1, Device Count = 3 (Devices 0, 1, 2, and 3)
Default EQ CHA
BR111 CHA VOD = 700 mVpp
BR111 CHB VOD = 1000 mVpp
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Table 8. Multi DS100BR111 EEPROM Data (continued)
EEPROM
ADDRESS
ADDRESS
(HEX)
EEPROM
DATA
COMMENTS
47
2F
0x54
End Device 0 and Device 3 - Address Offset 39
48
30
0x00
Begin Device 1 and Device 2 - Address Offset 3
49
31
0x00
50
32
0x04
51
33
0x07
52
34
0x00
53
35
0x2F
54
36
0xED
55
37
0x40
56
38
0x02
Default EQ CHB
57
39
0xFE
Default EQ CHB
58
3A
0xD4
59
3B
0x00
60
3C
0x2F
61
3D
0xAD
62
3E
0x40
63
3F
0x02
64
40
0xFA
65
41
0xD4
66
42
0x00
67
43
0x00
68
44
0x5F
69
45
0x5A
70
46
0x80
71
47
0x05
72
48
0xF5
73
49
0xA8
74
4A
0x00
75
4B
0x5F
76
4C
0x5A
77
4D
0x80
78
4E
0x05
79
4F
0xF5
80
50
0xA8
81
51
0x00
82
52
0x00
83
53
0x54
84
54
0x54
Default EQ CHA
BR111 CHA VOD = 700 mVpp
BR111 CHB VOD = 1000 mVpp
End Device 1 and Device 2 - Address Offset 39
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8.6 Register Maps
Table 9. SMBus Slave Mode Register Map
ADDRESS
0x00
0x01
0x02
0x03
0x04
0x05
30
REGISTER
NAME
BIT
TYPE
Control 3
Reserved
EEPROM
REG BIT
R/W
DESCRIPTION
Reserved
6:3
SMBus Address
[3:0]
R
2
EEPROM Reading
Done
R
1:0
Reserved
Set bit to 0
7:6
Idle Control
5:3
Reserved
2
LOS Select
LOS Monitor Selection
1 = Use LOS from CH B
0 = Use LOS from CH A
1:0
Reserved
Set bits to 0
7:6
Reserved
Set bits to 0
5
LOS override
4
LOS override value
SMBus strap observation
0x00
1 = EEPROM Done Loading
0 = EEPROM Loading
RWSC
Set bits to 0
Continuous Talk Control (Output Always On)
[7]: Continuous talk ENABLE (Channel A)
[6]: Continuous talk ENABLE (Channel B)
R/W
Control 2
Reserved
DEFAULT
7
Device ID
Control 1
FIELD
R/W
0x00
Yes
Set bits to 0
Yes
1 = LOS pin override enable
0 = Use Normal Signal Detection
Yes
1 = Normal Operation
0 = Output LOS
0x00
3
PWDN Inputs
Yes
2
PWDN Oscillator
Yes
1
Reserved
0
Reserved
7:0
Reserved
7:6
eSATA Mode
Enable
[7] Channel A (1)
[6] Channel B (1)
5
TX_DIS Override
Enable
1 = Override Use Reg 0x04[4:3]
0 = Normal Operation - uses pin
4
TX_DIS Value
Channel A
1 = Channel A TX Disabled
0 = Channel A TX Enabled
3
TX_DIS Value
Channel B
1 = Channel B TX Disabled
0 = Channel B TX Enabled
2
Reserved
1:0
EQ Stage 4
Limiting Control
7:0
Reserved
1 = PWDN
0 = Normal Operation
Set bit to 0
Yes
R/W
R/W
0x00
0x00
Set bit to 0
Reserved
Yes
Set bit to 0
[1]: Channel B - EQ Stage 4 Limiting On/Off
[0]: Channel A - EQ Stage 4 Limiting On/Off
Setting this control bit turns on added voltage
gain compared to normal operating range. If the
bits are set to 1 (On), the EQ will act as a
limiting amplifier, resulting in reduction of
overall linear gain characteristics. Turning these
bits On is not recommended for 10G-KR
applications.
R/W
0x00
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Reserved
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Register Maps (continued)
Table 9. SMBus Slave Mode Register Map (continued)
ADDRESS
0x06
0x07
0x08
REGISTER
NAME
Slave
Register
Control
Digital Reset
and Control
Pin Override
BIT
FIELD
TYPE
7
Disable EEPROM
CFG
6:5
Reserved
4
Reserved
DEFAULT
EEPROM
REG BIT
Disable Master Mode EEPROM Configuration
Set bits to 0
Yes
3
Register Enable
2:1
Reserved
Set bits to 0
0
Reserved
Set bit to 0
7
Reserved
Set bit to 0
6
Reset Registers
1 = Self clearing reset for SMBus registers
(register settings return to default values)
5
Reset SMBus
Master
4:0
Reserved
Set bits to 0 0001'b
7
Reserved
Set bit to 0
6
Override Idle
Threshold
Yes
1 = Override by Channel - see Reg 0x13 and
0x19
0 = SD_TH pin control
5
Reserved
Yes
Set bit to 0
4
Override IDLE
Yes
1 = Force IDLE by Channel - see Reg 0x0E
and 0x15
0 = Normal Operation
3
Reserved
R/W
2
Reserved
Set bit to 1
1 = Enable SMBus Slave Mode Register
Control
0 = Disable SMBus Slave Mode Register
Control
Note: In order to change VOD, DEM, and EQ
of the channels in slave mode, this bit must
be set to 1.
R/W
R/W
0x10
0x01
1 = Self clearing reset to SMBus master state
machine
Set bit to 0
Note: For all applications operating > 8Gbps,
users must set this bit to 1 and enable all
channels manually.
0x00
Yes
0x09-0x0A
DESCRIPTION
Override Output
Mode
1 = Enable Output Mode control for individual
outputs. See register locations 0x10[6] and
0x17[6].
0 = Disable - Outputs are kept in the normal
mode of operation allowing VOD and DE
adjustments.
1
Override DEM
Yes
Override De-emphasis (ignore rate)
0
Reserved
Yes
Set bit to 0
7:0
Reserved
7
Reserved
6:0
Reserved
R/W
0x00
R/W
0x70
Reserved
Reserved
0x0B
Reserved
0x0C
CH A
Analog
Override 1
7:0
Reserved
R/W
0x00
Set bits to 0x00
0x0D
CH A
Reserved
7:0
Reserved
R/W
0x00
Set bits to 0x00.
Yes
Reserved
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Register Maps (continued)
Table 9. SMBus Slave Mode Register Map (continued)
ADDRESS
0x0E
0x0F
0x10
0x11
0x12
32
REGISTER
NAME
BIT
FIELD
7:6
Reserved
5
Idle Auto
4
CH A
Control 1
EEPROM
REG BIT
DESCRIPTION
Set bits to 0
1 = Allow IDLE Select control in bit 4
0 = Automatic IDLE detect
(Must set 0x08[4] = 1 to override pin-select
control)
Idle Select
Yes
1 = Output is muted (electrical IDLE)
0 = Output is on
(Must set 0x08[4] = 1 to override pin-select
control)
3:2
Reserved
Yes
Set bits to 0
1:0
Reserved
7:0
BOOST [7:0]
7
Sel_scp
6
Output Mode
5:3
2:0
7:5
Reserved
4:3
Reserved
Set bits to 0
2:0
DEM [2:0]
Yes
De-Emphasis
000'b = -0.0 dB
001'b = -1.5 dB
010'b = -3.5 dB (Default)
011'b = -6.0 dB
100'b = -8.0 dB
101'b = -9.0 dB
110'b = -10.5 dB
111'b = -12.0 dB
7
Reserved
Yes
Set bit to 0
6:4
Reserved
Set bits to 0
IDLE Assert
Threshold[1:0]
Yes
Assert Thresholds
Use only if register 0x08 [6] = 1
00'b = 180 mVpp (Default)
01'b = 160 mVpp
10'b = 210 mVpp
11'b = 190 mVpp
Yes
De-assert Thresholds
Use only if register 0x08 [6] = 1
00'b = 110 mVpp (Default)
01'b = 100 mVpp
10'b = 150 mVpp
11'b = 130 mVpp
R/W
3:2
0x00
Set bits to 0
Yes
EQ Boost Default to 24 dB
See Table 3 for Information
Yes
1 = Short Circuit Protection ON
0 = Short Circuit Protection OFF
Yes
1 = Normal operation
0 = 10G-KR operation
Reserved
Yes
Set bits to 101'b
Reserved
Yes
Set bits to 101'b
CH A
Control 2
CH A
Idle
Threshold
DEFAULT
Yes
CH A
Idle Control
CH A
EQ Setting
TYPE
R/W
R/W
IDLE De-assert
Threshold[1:0]
0xED
R
R/W
R/W
1:0
0x2F
Set bits to 100'b
0x82
0x00
0x13
CH B
Analog
Override 1
7:0
Reserved
R/W
0x00
Set bits to 0x00
0x14
CH B
Reserved
7:0
Reserved
R/W
0x00
Set bits to 0x00
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Register Maps (continued)
Table 9. SMBus Slave Mode Register Map (continued)
ADDRESS
0x15
0x16
0x17
0x18
0x19
REGISTER
NAME
BIT
FIELD
7:6
Reserved
5
Idle Auto
4
CH B
Control 1
0x1A-0x1B
Reserved
0x1C
Reserved
EEPROM
REG BIT
DESCRIPTION
Set bits to 0
1 = Allow IDLE Select control in bit 4
0 = Automatic IDLE detect
(Must set 0x08[4] = 1 to override pin-select
control)
Idle Select
Yes
1 = Output is muted (electrical IDLE)
0 = Output is on
(Must set 0x08[4] = 1 to override pin-select
control)
3:2
Reserved
Yes
Set bits to 0
1:0
Reserved
7:0
BOOST [7:0]
7
Sel_scp
6
Output Mode
5:3
2:0
7:5
Reserved
4:3
Reserved
Set bits to 0
2:0
DEM [2:0]
Yes
De-Emphasis (Default = -3.5 dB)
000'b = -0.0 dB
001'b = -1.5 dB
010'b = -3.5 dB
011'b = -6.0 dB
100'b = -8.0 dB
101'b = -9.0 dB
110'b = -10.5 dB
111'b = -12.0 dB
7
Reserved
Yes
Set bit to 0
6:4
Reserved
Set bits to 0
IDLE Assert
Threshold[1:0]
Yes
Assert Thresholds
Use only if register 0x08 [6] = 1
00'b = 180 mVpp (Default)
01'b = 160 mVpp
10'b = 210 mVpp
11'b = 190 mVpp
Yes
De-assert Thresholds
Use only if register 0x08 [6] = 1
00'b = 110 mVpp (Default)
01'b = 100 mVpp
10'b = 150 mVpp
11'b = 130 mVpp
R/W
3:2
0x00
Set bits to 0
Yes
EQ Boost Default to 24 dB
See Table 3 for Information
Yes
1 = Short Circuit Protection ON
0 = Short Circuit Protection OFF
Yes
1 = Normal operation
0 = 10G-KR operation
Reserved
Yes
Set bits to 101'b
Reserved
Yes
Set bits to 101'b
CH B
Control 2
CH B
Idle
Threshold
DEFAULT
Yes
CH B
Idle Control
CH B
EQ Setting
TYPE
R/W
R/W
IDLE De-assert
Threshold[1:0]
7:0
Reserved
7:6
Reserved
5:2
Reserved
1:0
Reserved
0xED
R
R/W
R/W
1:0
0x2F
Set bits to 100'b
0x82
0x00
R/W
0x00
R/W
0x00
Reserved
Reserved
Yes
Reserved
Reserved
0x1D
Reserved
7:0
Reserved
R/W
0x2F
Yes
Reserved
0x1E
Reserved
7:0
Reserved
R/W
0xAD
Yes
Reserved
7:3
Reserved
2:0
Reserved
R/W
0x02
0x1F
Reserved
Reserved
Yes
Reserved
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Register Maps (continued)
Table 9. SMBus Slave Mode Register Map (continued)
ADDRESS
0x20
0x21-0x22
0x23
REGISTER
NAME
Reserved
Reserved
CH A VOD
Control
FIELD
7
Reserved
6:4
Reserved
3:0
Reserved
7:0
Reserved
7:6
Reserved
5
Reserved
4:2
VOD_CHA[2:0]
1:0
Reserved
TYPE
DEFAULT
EEPROM
REG BIT
Yes
R/W
0x00
Reserved
Reserved
Yes
R/W
DESCRIPTION
0x00
Reserved
Reserved
Set bits to 0
R/W
0x00
Yes
Set bit to 0
Yes
VOD Controls for CH A
000'b = 700 mVpp (Default)
001'b = 800 mVpp
010'b = 900 mVpp
011'b = 1000 mVpp
100'b = 1100 mVpp
101'b = 1200 mVpp
110'b = 1300 mVpp
Set bits to 0
0x24
Reserved
7:0
Reserved
R/W
0x2F
Yes
Reserved
0x25
Reserved
7:0
Reserved
R/W
0xAD
Yes
Reserved
7:3
Reserved
2:0
Reserved
R/W
0x02
7
Reserved
6:4
Reserved
3:0
Reserved
7
Reserved
6
Override Fast Idle
5:4
en_hi_idle_th[1:0]
3:2
en_fast_idle[1:0]
1:0
Reserved
7:0
Reserved
7:6
Reserved
5:2
Reserved
1:0
Reserved
7:0
Reserved
7:5
Reserved
0x26
0x27
0x28
Reserved
Reserved
Idle Control
0x29-0x2A
Reserved
0x2B
Reserved
0x2C
0x2D
0x2E
34
BIT
Reserved
CH B VOD
Control
Reserved
4:2
VOD_CHB[2:0]
1:0
Reserved
7:3
Reserved
2:0
Reserved
R/W
Reserved
Yes
Reserved
Yes
Reserved
0x00
Reserved
Yes
Reserved
Set bit to 0
R/W
0x00
R/W
0x00
R/W
0x00
Yes
1 = Enable Fast IDLE control in Reg 0x28[3:2]
0 = Disable Fast IDLE control in Reg 0x28[3:2].
Yes
Enable high SD thresholds (Slow IDLE)
[5]: CH A
[4]: CH B
Yes
Enable Fast IDLE
[3]: CH A
[2]: CH B
Yes
Set bits to 0
Reserved
Reserved
Yes
Reserved
Reserved
R/W
R/W
R/W
0x2F
0xAD
0x02
Yes
Reserved
Yes
Set bits to 101'b
Yes
VOD Controls for CH B
000'b = 700 mVpp
001'b = 800 mVpp
010'b = 900 mVpp
011'b = 1000 mVpp (Default)
100'b = 1100 mVpp
101'b = 1200 mVpp
110'b = 1300 mVpp
Yes
Set bits to 01'b
Reserved
Yes
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Reserved
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Register Maps (continued)
Table 9. SMBus Slave Mode Register Map (continued)
ADDRESS
0x2F
REGISTER
NAME
Reserved
0x30-0x31
Reserved
0x32
Reserved
BIT
FIELD
7
Reserved
6:4
Reserved
3:0
Reserved
7:0
Reserved
7:6
Reserved
5:2
Reserved
1:0
Reserved
TYPE
DEFAULT
EEPROM
REG BIT
Yes
R/W
0x00
0x00
R/W
0x00
Reserved
Reserved
Yes
R/W
DESCRIPTION
Reserved
Reserved
Reserved
Yes
Reserved
Reserved
0x33
Reserved
7:0
Reserved
R/W
0x2F
Yes
Reserved
0x34
Reserved
7:0
Reserved
R/W
0xAD
Yes
Reserved
7:3
Reserved
2:0
Reserved
R/W
0x02
7
Reserved
6:4
Reserved
R/W
0x00
3:0
Reserved
7:0
Reserved
7:6
Reserved
5:2
Reserved
0x35
Reserved
0x36
Reserved
0x37-0x38
Reserved
Reserved
Yes
Reserved
Yes
Reserved
Reserved
Yes
R/W
0x00
R/W
0x00
Yes
Reserved
Reserved
Reserved
0x39
Reserved
1:0
Reserved
0x3A
Reserved
7:0
Reserved
R/W
0x2F
Yes
Reserved
0x3B
Reserved
7:0
Reserved
R/W
0xAD
Yes
Reserved
7:3
Reserved
2:0
Reserved
R/W
0x02
7
Reserved
6:4
Reserved
3:0
Reserved
7:0
Reserved
7:6
Reserved
5:2
Reserved
1:0
Reserved
0x3C
Reserved
0x3D
Reserved
0x3E-0x3F
Reserved
0x40
Reserved
Reserved
Reserved
R/W
0x00
R/W
0x00
Reserved
Yes
Reserved
Yes
Reserved
Reserved
Yes
Reserved
Reserved
Reserved
R/W
0x00
Yes
Reserved
Reserved
0x41
Reserved
7:0
Reserved
R/W
0x2F
Yes
Reserved
0x42
Reserved
7:0
Reserved
R/W
0xAD
Yes
Reserved
0x43
Reserved
7:3
Reserved
2:0
Reserved
R/W
0x02
7
Reserved
6:4
Reserved
3:0
Reserved
0x44
Reserved
R/W
Reserved
Yes
Reserved
Yes
Reserved
0x00
Reserved
Yes
Reserved
0x45
Reserved
7:0
Reserved
R/W
0x00
Reserved
0x46
Reserved
7:0
Reserved
R/W
0x38
Reserved
7:4
Reserved
3:0
Reserved
R/W
0x00
7:6
Reserved
5:0
Reserved
7:0
Reserved
0x47
Reserved
0x48
Reserved
0x49-0x4B
Reserved
R/W
0x05
R/W
0x00
Reserved
Yes
Reserved
Yes
Reserved
Reserved
Reserved
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Register Maps (continued)
Table 9. SMBus Slave Mode Register Map (continued)
ADDRESS
0x4C
REGISTER
NAME
Reserved
BIT
FIELD
7:3
Reserved
2:1
Reserved
0
Reserved
0x4D-0x50
Reserved
7:0
Reserved
0x51
Device
Information
7:5
Version
4:0
Device ID
0x52-0x55
Reserved
7:0
0x56
Reserved
0x57
Reserved
0x58
Reserved
TYPE
DEFAULT
EEPROM
REG BIT
Yes
R/W
0x00
DESCRIPTION
Reserved
Reserved
Yes
Reserved
R/W
0x00
Reserved
R
0x67
Reserved
R/W
0x00
Reserved
7:0
Reserved
R/W
0x02
Reserved
7:0
Reserved
R/W
0x14
Reserved
7:0
Reserved
R/W
0x21
Reserved
7:1
Reserved
R/W
0x00
011'b
0 0111'b
Reserved
0x59
Reserved
0
Reserved
Yes
Reserved
0x5A
Reserved
7:0
Reserved
R/W
0x54
Yes
Reserved
0x5B
Reserved
7:0
Reserved
R/W
0x54
Yes
Reserved
0x5C-0x61
Reserved
7:0
Reserved
R/W
0x00
36
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
9.1.1 Signal Integrity in 10G-KR Applications
When configured in "KR Mode", using either the VOD_SEL and MODE pin setting or SMBus register control, the
DS100BR111 is designed to operate transparently within a KR backplane channel environment. Installing a
DS100BR111 repeater within the KR backplane channel splits the total channel attenuation into two parts. In
other words, operating in "KR Mode" implies that signals will pass through the repeater with a linearized output.
Ideally the repeater can be placed near the middle of the channel, maximizing the signal-to-noise ratio across the
bidirectional interface.
In order to maximize the 10G-KR solution space, the 802.3ap specification calls for an optimization of the Tx
partner signal conditioning coefficients based on feedback from the KR Rx ASIC endpoint. This link optimization
sequence is commonly referred to as "link training" and is performed at speed (10.3125 Gbps). Setting the
DS100BR111 active CTLE to compensate for the channel loss from each of the KR transmitters will reduce the
transmit and receive equalization settings required on the KR physical layer devices. This central location keeps
a larger signal-to-noise ratio at all points in the channel, extending the available solution space and increasing
the overall margin of almost any channel. Suggested initial settings for the DS100BR111 are given in Table 10
and Table 11. Further adjustments to EQx, DEMx, and VODx settings may optimize signal margin on the link for
different system applications.
Table 10. Suggested 10G-KR Initial Device Settings in Pin Mode (1)
(1)
CHANNEL SETTINGS
PIN MODE
EQx[1:0]
0, 0
VOD_SEL
1
DEMx
0
For 10G-KR mode with slow idle-to-active response, the MODE pin should be left floating.
Table 11. Suggested 10G-KR Initial Device Settings in SMBus Modes
CHANNEL SETTINGS
SMBus MODES
EQx
0x00
VODx
100'b
DEMx
000'b
The SMBus Slave Mode code example in Table 12 may be used to program the DS100BR111 with the
recommended device settings.
Table 12. SMBus 10G-KR Example Sequence
REGISTER
WRITE VALUE
0x06
0x18
Set SMBus Slave Mode Register Enable.
COMMENTS
0x08
0x04
Enable Output Mode Control for individual channel outputs.
0x0F
0x00
Set CHA EQ to 0x00.
0x10
0xAD
Set CHA Output Mode to Linear (10G-KR mode).
If link-training is not required, set Reg 0x10 to 0xED.
0x11
0x00
Set CHA DEM to 000'b.
0x16
0x00
Set CHB EQ to 0x00.
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Table 12. SMBus 10G-KR Example Sequence (continued)
REGISTER
WRITE VALUE
COMMENTS
0x17
0xAD
Set CHB Output Mode to Linear (10G-KR mode).
If link-training is not required, set Reg 0x18 to 0xED.
0x18
0x00
Set CHB DEM to 000'b.
0x23
0x10
Set CHA VOD to 100'b.
0x28
0x00
Leave Idle Control at default levels.
For SAS/SATA applications, set Reg 0x28 to 0x4C.
0x2D
0xB1
Set CHB VOD to 100'b.
9.1.2 OOB (Out-of-Band) Functionality in SAS/SATA Applications
For SAS/SATA systems, a low speed OOB (Out-of-Band) communication sequence is used to detect and
communicate device capabilities between host ASIC and link partners. These OOB signals, including
COMWAKE, COMINIT, COMRESET, and COMSAS, are a series of burst, idle, and negation times transmitted
and detected across the SAS/SATA link. These bursts occur at a rapid rate, with the COMWAKE signal having
the most stringent requirement of 106.6 ns active followed by 106.6 ns idle. Normally, if the device is set in 10GKR mode (MODE pin floating), the device goes idle-to-active in approximately 150 ns. If the device is set to SAS
mode (MODE pin tied via 1 kΩ to VDD (2.5 V mode) or VIN (3.3 V mode)), the device goes idle-to-active in
approximately 3 to 4 ns. This fast idle-to-active time is critical to pass OOB signaling, and when operating in pin
mode, the MODE pin should be tied high. If operating in SMBus slave mode, the user can set Reg 0x28 to 0x4C
for this faster idle-to-active response.
9.2 Typical Application
The DS100BR111 works to extend the reach possible by using active equalization on the channel, boosting
attenuated signals so that they can be more easily recovered at the Rx endpoint. The capability of the repeater
can be explored across a range of data rates and ASIC-to-link-partner signaling, as shown in the following test
setup connections. Figure 10 through Figure 12 represent typical generic application scenarios for the
DS100BR111.
Pattern
Generator
TL
Lossy Channel
VOD = 1.0 Vp-p,
DE = 0 dB
PRBS-11
IN
DS100BR111
OUT
Scope
BW = 60 GHz
Figure 10. Test Setup Connections Diagram
Pre-Channel Only
Pattern
Generator
VOD = 1.0 Vp-p,
DE = 0 dB
PRBS-11
TL1
Lossy Channel
IN
DS100BR111
OUT
TL2
Lossy Channel
Scope
BW = 60 GHz
Figure 11. Test Setup Connections Diagram
Pre-Channel and Post-Channel, No Tx Source De-emphasis
Pattern
Generator
VOD = 1.0 Vp-p,
DE = -6 dB
PRBS-11
TL1
Lossy Channel
IN
DS100BR111
OUT
TL2
Lossy Channel
Scope
BW = 60 GHz
Figure 12. Test Setup Connections Diagram
Pre-Channel and Post-Channel, -6 dB Tx Source De-emphasis
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Typical Application (continued)
9.2.1 Design Requirements
As with any high speed design, there are many factors that influence the overall performance. Below are a list of
critical areas for consideration during design.
• Use 100 Ω impedance traces. Length matching on the P and N traces should be done on the single-ended
segments of the differential pair.
• Use uniform trace width and trace spacing for differential pairs.
• Place AC-coupling capacitors near to the receiver end of each channel segment to minimize reflections.
• The maximum body size for AC-coupling capacitors is 0402.
• Back-drill connector vias and signal vias to minimize stub length.
• Use Reference plane vias to ensure a low inductance path for the return current.
9.2.2 Detailed Design Procedure
The DS100BR111 is designed to be placed at an offset location with respect to the overall channel attenuation.
In order to optimize performance, the repeater requires optimization to extend the reach of the cable or trace
length while also recovering a solid eye opening. To optimize the repeater in a 10G-KR environment, the settings
mentioned in Table 10 (for Pin Mode) and Table 11 (for SMBus Modes) are recommended as a default starting
point. For a generic 10GbE application where link training is not required, the following settings in Table 13 and
Table 14 may be referenced as an initial starting point:
Table 13. Suggested Generic 10GbE Initial Device Settings in Pin Mode (1)
(1)
CHANNEL SETTINGS
PIN MODE
EQx[1:0]
0, 0
VOD_SEL
0
DEMx
0
For 10GbE applications, the MODE pin should be tied high.
Table 14. Suggested Generic 10GbE Initial Device Settings in SMBus Modes
CHANNEL SETTINGS
SMBus MODES
EQx
0x00
VODx
000'b
DEMx
000'b
Examples of the repeater performance are illustrated in the performance curves in the next section.
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9.2.3 Application Performance Plots
The lab setups referenced in Figure 10 to Figure 12 were used to collect typical performance data on FR4 and
cable media. For all measurements, Mode Pin = Float.
CML Serializer Data Throughput
(138 mV/DIV)
CML Serializer Data Throughput
(202 mV/DIV)
9.2.3.1 Equalization Results (Pre-Channel Only)
Time (16.16 ps/DIV)
Time (16.16 ps/DIV)
No Repeater Used
DS100BR111 Settings: EQA = 0x01, DEMA = 000'b,
VOD = 000'b
Figure 14. TL = 5 Inch 4–Mil FR4 Trace,
DS100BR111 CHA, 10.3125 Gbps
CML Serializer Data Throughput
(140 mV/DIV)
CML Serializer Data Throughput
(194 mV/DIV)
Figure 13. TL = 5 Inch 4–Mil FR4 Trace,
No Repeater, 8 Gbps
Time (16.16 ps/DIV)
Time (16.16 ps/DIV)
No Repeater Used
DS100BR111 Settings: EQA = 0x02, DEMA =000'b,
VODA = 000'b
Figure 16. TL= 10 Inch 4–Mil FR4 Trace,
DS100BR111 CHA, 10.3125 Gbps
CML Serializer Data Throughput
(140 mV/DIV)
CML Serializer Data Throughput
(170 mV/DIV)
Figure 15. TL = 10 Inch 4–Mil FR4 Trace,
No Repeater, 10.3125 Gbps
Time (16.16 ps/DIV)
Time (16.16 ps/DIV)
No Repeater Used
DS100BR111 Settings: EQA = 0x03, DEMA = 000'b,
VOD = 000'b
Figure 17. TL = 15 Inch 4–Mil FR4 Trace,
No Repeater, 10.3125 Gbps
40
Figure 18. TL = 15 Inch 4–Mil FR4 Trace,
DS100BR111 CHA, 10.3125 Gbps
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CML Serializer Data Throughput
(138 mV/DIV)
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CML Serializer Data Throughput
(178 mV/DIV)
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Time (16.16 ps/DIV)
Time (16.16 ps/DIV)
No Repeater Used
DS100BR111 Settings: EQA = 0x07, DEMA = 000'b,
VOD = 000'b
Figure 20. TL = 20 Inch 4–Mil FR4 Trace,
DS100BR111 CHA, 10.3125 Gbps
CML Serializer Data Throughput
(132 mV/DIV)
CML Serializer Data Throughput
(168 mV/DIV)
Figure 19. TL = 20 Inch 4–Mil FR4 Trace,
No Repeater, 10.3125 Gbps
Time (16.16 ps/DIV)
Time (16.16 ps/DIV)
No Repeater Used
DS100BR111 Settings: EQA = 0x0F, DEMA = 000'b,
VOD = 000'b
Figure 22. TL = 30 Inch 4–Mil FR4 Trace,
DS100BR111 CHA, 10.3125 Gbps
CML Serializer Data Throughput
(162 mV/DIV)
CML Serializer Data Throughput
(162 mV/DIV)
Figure 21. TL = 30 Inch 4–Mil FR4 Trace,
No Repeater Used, 10.3125 Gbps
Time (16.16 ps/DIV)
Time (16.16 ps/DIV)
No Repeater Used
DS100BR111 Settings: EQA = 0x1F, DEMA = 000'b,
VOD = 000'b
Figure 23. TL = 35 Inch 4–Mil FR4 Trace,
No Repeater Used, 10.3125 Gbps
Figure 24. TL = 35 Inch 4–Mil FR4 Trace,
DS100BR111 CHA, 10.3125 Gbps
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CML Serializer Data Throughput
(132 mV/DIV)
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CML Serializer Data Throughput
(184 mV/DIV)
SNLS338F – JANUARY 2011 – REVISED NOVEMBER 2014
Time (16.16 ps/DIV)
Time (16.16 ps/DIV)
No Repeater Used
DS100BR111 Settings: EQA = 0x03, DEMA = 000'b,
VODA = 000'b
Figure 26. TL = 3-Meter 30-AWG 100 Ω Twin-Axial Cable,
DS100BR111 CHA, 10.3125 Gbps
CML Serializer Data Throughput
(184 mV/DIV)
CML Serializer Data Throughput
(184 mV/DIV)
Figure 25. TL = 3-Meter 30-AWG 100 Ω Twin-Axial Cable,
No Repeater, 10.3125 Gbps
Time (16.16 ps/DIV)
Time (16.16 ps/DIV)
No Repeater Used
DS100BR111 Settings: EQA = 0x0F, DEMA = 000'b,
VODA = 011'b
Figure 28. TL = 7-Meter 30-AWG 100 Ω Twin-Axial Cable,
DS100BR111 CHA, 10.3125 Gbps
CML Serializer Data Throughput
(132 mV/DIV)
CML Serializer Data Throughput
(114 mV/DIV)
Figure 27. TL = 7-Meter 30-AWG 100 Ω Twin-Axial Cable,
No Repeater, 10.3125 Gbps
Time (16.16 ps/DIV)
Time (16.16 ps/DIV)
No Repeater Used
DS100BR111 Settings: EQA = 0x2F, DEMA = 000'b,
VODA = 000'b
Figure 29. TL = 10-Meter 30-AWG 100 Ω Twin-Axial Cable,
No Repeater, 10.3125 Gbps
42
Figure 30. TL = 10-Meter 30-AWG 100 Ω Twin-Axial Cable,
DS100BR111 CHA, 10.3125 Gbps
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CML Serializer Data Throughput
(132 mV/DIV)
CML Serializer Data Throughput
(162 mV/DIV)
9.2.3.2 Equalization and De-Emphasis Results
(Pre-channel and Post-channel, No Tx Source De-emphasis)
Time (16.16 ps/DIV)
Time (16.16 ps/DIV)
No Repeater Used
DS100BR111 Settings: EQA = 0x0B, DEMA = 010'b,
VOD = 101'b
Figure 31. TL1 = 15 Inch 4–Mil FR4 Trace,
TL2 = 10 Inch 4–Mil FR4 Trace,
No Repeater, 10.3125 Gbps
Figure 32. TL1 = 15 Inch 4–Mil FR4 Trace,
TL2 = 10 Inch 4–Mil FR4 Trace,
DS100BR111 CHA, 10.3125 Gbps
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CML Serializer Data Throughput
(118 mV/DIV)
CML Serializer Data Throughput
(88 mV/DIV)
9.2.3.3 Equalization and De-Emphasis Results
(Pre-channel and Post-channel, -6 dB Tx Source De-emphasis)
Time (16.16 ps/DIV)
Time (16.16 ps/DIV)
No Repeater Used
DS100BR111 Settings: EQA = 0x00, DEMA = 000'b,
VOD = 011'b
Figure 34. TL1 = 15 Inch 4–Mil FR4 Trace,
TL2 = 10 Inch 4–Mil FR4 Trace,
DS100BR111 CHA, 10.3125 Gbps
CML Serializer Data Throughput
(130 mV/DIV)
CML Serializer Data Throughput
(80 mV/DIV)
Figure 33. TL1 = 15 Inch 4–Mil FR4 Trace,
TL2 = 10 Inch 4–Mil FR4 Trace,
No Repeater, 10.3125 Gbps
Time (16.16 ps/DIV)
Time (16.16 ps/DIV)
No Repeater Used
DS100BR111 Settings: EQA = 0x03, DEMA = 010'b,
VOD = 101'b
Figure 36. TL1 = 30 Inch 4–Mil FR4 Trace,
TL2 = 10 Inch 4–Mil FR4 Trace,
DS100BR111 CHA, 10.3125 Gbps
CML Serializer Data Throughput
(130 mV/DIV)
CML Serializer Data Throughput
(72 mV/DIV)
Figure 35. TL1 = 30 Inch 4–Mil FR4 Trace,
TL2 = 10 Inch 4–Mil FR4 Trace,
No Repeater, 10.3125 Gbps
Time (16.16 ps/DIV)
Time (16.16 ps/DIV)
No Repeater Used
DS100BR111 Settings: EQA = 0x03, DEMA = 100'b,
VOD = 101'b
Figure 37. TL1 = 40 Inch 4–Mil FR4 Trace,
TL2 = 10 Inch 4–Mil FR4 Trace,
No Repeater, 10.3125 Gbps
44
Figure 38. TL1 = 40 Inch 4–Mil FR4 Trace,
TL2 = 10 Inch 4–Mil FR4 Trace,
DS100BR111 CHA, 10.3125 Gbps
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10 Power Supply Recommendations
The DS100BR111 has an optional internal voltage regulator to provide the 2.5 V supply to the device. In 3.3 V
mode, the VIN pin = 3.3 V is used to supply power to the device and the VDD pins should be left open. The
internal regulator will provide the 2.5 V to the VDD pins of the device and a 0.1 μF cap is needed at each of the
two VDD pins for power supply de-coupling (total capacitance should be ≤ 0.2 μF). The VDD_SEL pin must be
tied to GND to enable the internal regulator. In 2.5 V mode, the VIN pin should be left open and 2.5 V supply
must be applied to the VDD pins. The VDD_SEL pin must be left open (no connect) to disable the internal
regulator.
The DS100BR111 can be configured for 2.5 V operation or 3.3 V operation. The lists below outline required
connections for each supply selection.
• 3.3 V Mode of Operation
– Tie VDD_SEL = GND.
– Feed 3.3 V supply into VIN pin. Local 10 µF and 1 µF decoupling at VIN is recommended.
– See information on VDD bypass in Power Supply Bypass.
– SDA and SCL pins should connect pull-up resistor to VIN.
– Any 4-Level input which requires a connection to "Logic 1" should use a 1 kΩ resistor to VIN.
• 2.5 V Mode of Operation
– VDD_SEL = Float
– VIN = Float
– Feed 2.5 V supply into VDD pins. Local 10 µF and 1 µF decoupling at VIN is recommended.
– See information on VDD bypass in Power Supply Bypass.
– SDA and SCL pins connect pull-up resistor to VDD for 2.5 V or 3.3 V microcontroller SMBus IO.
– Any 4-Level input which requires a connection to "Logic 1" should use a 1 kΩ resistor to VDD.
NOTE
The DAP (bottom solder pad) is the GND connection.
3.3 V mode
2.5 V mode
VDD_SEL
Enable
VDD_SEL
open
VIN
open
Disable
3.3 V
Capacitors can be
either tantalum or an
ultra-low ESR ceramic.
Internal
voltage
regulator
2.5 V
0.1 µF
0.1 µF
VDD
VDD
0.1 µF
Place 0.1 µF capacitors close to VDD Pins
0.1 µF
1 µF
VDD
VDD
10 µF
2.5 V
1 µF
VIN
10 µF
Internal
voltage
regulator
Capacitors can be
either tantalum or an
ultra-low ESR ceramic.
Place 0.1 µF capacitors close to VDD Pins
Total capacitance should be 7 0.2 µF
Figure 39. 3.3 V or 2.5 V Supply Connection Diagram
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10.1 Power Supply Bypass
Two approaches are recommended to ensure that the DS100BR111 is provided with an adequate power supply
bypass. First, the supply (VDD) and ground (GND) pins should be connected to power planes routed on adjacent
layers of the printed circuit board. Second, careful attention to supply bypassing through the proper use of
bypass capacitors is required. A 0.1 μF bypass capacitor should be connected to each VDD pin such that the
capacitor is placed as close as possible to the device. Small body size capacitors (such as 0402) reduce the
capacitors' parasitic inductance and also help in placement close to the VDD pin. If possible, the layer thickness
of the dielectric should be minimized so that the VDD and GND planes create a low inductance supply with
distributed capacitance.
11 Layout
11.1 Layout Guidelines
The differential inputs and outputs are designed with 100 Ω differential terminations. Therefore, they should be
connected to interconnects with controlled differential impedance of approximately 85-110 Ω. It is preferable to
route differential lines primarily on one layer of the board, particularly for the input traces. The use of vias should
be avoided if possible. If vias must be used, they should be used sparingly and must be placed symmetrically for
each side of a given differential pair. Whenever differential vias are used, the layout must also provide for a low
inductance path for the return currents as well. Route the differential signals away from other signals and noise
sources on the printed circuit board. To minimize the effects of crosstalk, a 5:1 ratio or greater should be
maintained between inter-pair spacing and trace width. See AN-1187 “Leadless Leadframe Package (LLP)
Application Report” (literature number SNOA401) for additional information on QFN (WQFN) packages.
The DS100BR111 pinout promotes easy high speed routing and layout. To optimize DS100BR111 performance,
refer to the following guidelines:
1. Place local VIN and VDD capacitors as close as possible to the device supply pins. Often the best location is
directly under the DS100BR111 pins to reduce the inductance path to the capacitor. In addition, bypass
capacitors may share a via with the DAP GND to minimize ground loop inductance.
2. Differential pairs going into or out of the DS100BR111 should have adequate pair-to-pair spacing to minimize
crosstalk.
3. Use return current via connections to link reference planes locally. This ensures a low inductance return
current path when the differential signal changes layers.
4. Optimize the via structure to minimize trace impedance mismatch.
5. Place GND vias around the DAP perimeter to ensure optimal electrical and thermal performance. A 2x2 or
3x3 array of GND vias for the DAP is recommended.
6. Use small body size AC coupling capacitors when possible — 0402 or smaller size is preferred. The AC
coupling capacitors should be placed closer to the Rx on the channel.
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11.2 Layout Example
In most cases, DS100BR111 layouts will fit neatly into a 1-lane application. The example layout in Figure 40
shows the DS100BR111 channels in a typical 1-lane bidirectional layout.
2
1
2
1
Uniform trace
width and spacing
6
7
2
7
2
1
1
5
5
5
Via to GND Layer for
return current path
4
3
2
24
8
23
GND
BOTTOM OF PKG
(TOP LAYER)
22
10
21
11
20
12
19
13 14 15 16
1
2
Via to Bottom Layer
VDD
Via to GND Layer
Pad on Bottom Layer
7
5
5
5
17 18
VIN
Via to VIN Layer
2
1
7
9
> 25
Differential
Vias
5
1
7
Via to GND Layer
Pad on Bottom Layer
Figure 40. DS100BR111 Example Layout
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation, see the following:
• Absolute Maximum Ratings for Soldering (SNOA549).
• Leadless Leadframe Package (LLP) Application Report, AN-1187 (SNOA401)
• Semiconductor and IC Package Thermal Metrics (SPRA953).
12.2 Trademarks
All trademarks are the property of their respective owners.
12.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
DS100BR111SQ/NOPB
ACTIVE
WQFN
RTW
24
1000
RoHS & Green
SN
Level-3-260C-168 HR
-40 to 85
BR111
DS100BR111SQE/NOPB
ACTIVE
WQFN
RTW
24
250
RoHS & Green
SN
Level-3-260C-168 HR
-40 to 85
BR111
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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