DS125BR800ANJYR

DS125BR800ANJYR

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    WQFN-54_5.5X10MM-EP

  • 描述:

    DS125BR800A 具有输入 CTLE 和输出去加重功能的 12.5Gbps 8 通道转接驱动器

  • 数据手册
  • 价格&库存
DS125BR800ANJYR 数据手册
DS125BR800A www.ti.com SNLS467 – NOVEMBER 2013 Low-Power 12.5-Gbps 8-Channel (Unidirectional) Repeater With Input Equalization Check for Samples: DS125BR800A FEATURES DESCRIPTION • • The DS125BR800A is an extremely low-power highperformance multi-protocol repeater/redriver designed to support eight channels of PCIe, SAS, and other high-speed interface serial protocols up to 12.5 Gbps. The receiver's continuous time linear equalizer (CTLE) provides a boost of up to +30 dB at 6.25 GHz (12.5 Gbps) in each of its eight channels and is capable of opening an input eye that is completely closed due to inter symbol interference (ISI) induced by interconnect medium such as 30in+ backplane traces or 8m+ copper cables, hence enabling host controllers to ensure an error free end-to-end link. The strong linear equalization maximizes interconnect channel extension when the DS125BR800A is placed with the majority of channel loss on the devices input side. Adjustable transmit de-emphasis and output voltage amplitude help to compensate for the remaining channel attenuation on the output side. 1 2 • • • • • • • • • Proven System Interoperability Comprehensive multi-protocol Repeater Family Low 65-mW/Channel (Typ) Power Consumption, With Option to Power Down Unused Channels Transparent Management of Link Training Protocol for PCIe and SAS Advanced Signal Conditioning Features – Rx CTLE up to 30 dB (24 dB for SAS3) – Tx De-Emphasis up to -12 dB – Tx Output Voltage Control: 700 - 1300 mV Device Configuration Interface: – Pin Selection, EEPROM, or SMBus Interface Single Supply Voltage: 2.5 V or 3.3 V −40°C to 85°C Operating Temperature Range 3-kV HBM ESD Rating Flow-Thru Pinout: 54-Pin LLP (10 mm x 5.5 mm, 0.5 mm pitch) Supported Protocols – SAS/SATA – PCIe – Other Proprietary Interface up to 12.5 Gbps When operating in SAS-3 and PCIe Gen-3 mode, the DS125BR800A transparently allows the host controller and the end point to optimize the full link and negotiate transmit equalizer coefficients. This seamless management of the link training protocol ensures system level interoperability with minimum latency. With a low power consumption of 65 mW/channel (typ) and option to turn-off unused channels, the DS125BR800A enables energy efficient system design. A single supply of 3.3 V or 2.5 V is required to power the device. The programmable settings can be applied easily via pins, software (SMBus or I2C) or loaded via an external EEPROM. When operating in the EEPROM mode, the configuration information is automatically loaded on power up, which eliminates the need for an external microprocessor or software driver. 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2013 , Texas Instruments Incorporated DS125BR800A SNLS467 – NOVEMBER 2013 www.ti.com Typical Application 8 TX Connector ASIC or PCIe EP 8 RX DS125BR800A 8 RX System Board Root Complex DS125BR800A Connector ard Bo ce Tra 8 TX Block Diagram - Detail View Of Channel (1 Of 8) VOD/DeEMPHASIS CONTROL VDD Auto/Manual RXDET INx_n+ RATE DET DEMA/B SMBus EQ OUTBUF INx_n- EQA/B SMBus 2 OUTx_n+ OUTx_n- IDLE DET TX Idle Enable SMBus Submit Documentation Feedback Copyright © 2013 , Texas Instruments Incorporated Product Folder Links: DS125BR800A DS125BR800A www.ti.com SNLS467 – NOVEMBER 2013 PWDN VDD DEMA1/SCL DEMA0/SDA ENSMB EQB1/AD2 EQB0/AD3 51 50 49 48 47 46 DEMB0/AD1 53 52 DEMB1/AD0 54 Pin Diagram SMBUS AND CONTROL INB_0+ 1 45 OUTB_0+ INB_0- 2 44 OUTB_0- INB_1+ 3 43 OUTB_1+ INB_1- 4 42 OUTB_1- INB_2+ 5 41 VDD INB_2- 6 40 OUTB_2+ INB_3+ 7 39 OUTB_2- INB_3- 8 38 OUTB_3+ VDD 9 37 OUTB_3- INA_0+ 10 36 VDD INA_0- 11 35 OUTA_0+ INA_1+ 12 34 OUTA_0- INA_1- 13 33 OUTA_1+ VDD 14 32 OUTA_1- INA_2+ 15 31 OUTA_2+ INA_2- 16 30 OUTA_2- INA_3+ 17 29 OUTA_3+ INA_3- 18 28 OUTA_3- 19 20 21 22 23 24 25 26 27 EQA1 EQA0 MODE RXDET RESERVED VIN VDD_SEL SD_TH/READ_EN ALL_DONE DAP = GND NOTE: Above 54-lead LLP graphic is a TOP VIEW, looking down through the package. Figure 1. DS125BR800A Pin Diagram 54 lead Submit Documentation Feedback Copyright © 2013 , Texas Instruments Incorporated Product Folder Links: DS125BR800A 3 DS125BR800A SNLS467 – NOVEMBER 2013 www.ti.com Table 1. Pin Descriptions (1) Pin Name Pin Number I/O, Type Pin Description Differential High Speed I/O's INB_0+, INB_0-,INB_1+, INB_1-,INB_2+, INB_2,INB_3+, INB_3- 1, 2, 3, 4, 5, 6, 7, 8, I Inverting and non-inverting CML differential inputs to the equalizer. Onchip 50Ω termination resistor connects INB_n+ to VDD and INB_n- to VDD when enabled. AC coupling required on high-speed I/O INA_0+, INA_0-,INA_1+, INA_1-,INA_2+, INA_2,INA_3+, INA_3- 10, 11, 12, 13, 15, 16, 17, 18 I Inverting and non-inverting CML differential inputs to the equalizer. Onchip 50Ω termination resistor connects INA_n+ to VDD and INA_n- to VDD when enabled. AC coupling required on high-speed I/O OUTB_0+, OUTB_1+, OUTB_2+, OUTB_3+, OUTB_0-, OUTB_1-, OUTB_2-, OUTB_3- 45, 44, 43, 42, 40, 39, 38, 37 O Inverting and non-inverting 50Ω driver outputs with de-emphasis. Compatible with AC coupled CML inputs. AC coupling required on high-speed I/O OUTA_0+, OUTA_1+, OUTA_2+, OUTA_3+, OUTA_0-, OUTA_1-, OUTA_2-, OUTA_3- 35, 34, 33, 32, 31, 30, 29, 28 O Inverting and non-inverting 50Ω driver outputs with de-emphasis. Compatible with AC coupled CML inputs. AC coupling required on high-speed I/O I, 4-LEVEL System Management Bus (SMBus) enable pin Tie 1kΩ to VDD = Register Access SMBus Slave Mode FLOAT = Read External EEPROM (Master SMBUS Mode) Tie 1kΩ to GND = Pin Mode Control Pins — Shared (LVCMOS) ENSMB 48 ENSMB = 1 (SMBUS MODE) SCL 50 I, LVCMOS O, OPEN Drain ENSMB Master or Slave mode SMBUS clock input is enabled (slave mode). Clock output when loading EEPROM configuration (master mode). SDA 49 I, LVCMOS, O, OPEN Drain ENSMB Master or Slave mode The SMBus bidirectional SDA pin is enabled. Data input or open drain (pull-down only) output. AD0-AD3 54, 53, 47, 46 I, LVCMOS ENSMB Master or Slave mode SMBus Slave Address Inputs. In SMBus mode, these pins are the user set SMBus slave address inputs. READ_EN 26 I, LVCMOS When using an External EEPROM, a transition from high to low starts the load from the external EEPROM EQA0, EQA1, EQB0, EQB1 20, 19, 46, 47 I, 4-LEVEL EQA[1:0] and EQB[1:0] control the level of equalization on the input pins. The pins are active only when ENSMB is de-asserted (low). The 8 channels are organized into two banks. Bank A is controlled with the EQA[1:0] pins and bank B is controlled with the EQB[1:0] pins. When ENSMB goes high the SMBus registers provide independent control of each channel. The EQB[1:0] pins are converted to SMBUS AD2/AD3 inputs. See Table 3. DEMA0, DEMA1, DEMB0, DEMB1 49, 50, 53, 54 I, 4-LEVEL DEMA[1:0] and DEMB[1:0] control the level of de-emphasis of the output driver. The pins are only active when ENSMB is de-asserted (low). The 8 channels are organized into two banks. Bank A is controlled with the DEMA[1:0] pins and bank B is controlled with the DEMB[1:0] pins. When ENSMB goes high the SMBus registers provide independent control of each channel. The DEMA[1:0] pins are converted to SMBUS SCL/SDA and DEMB[1:0] pins are converted to AD0, AD1 inputs. See Table 4. MODE 21 I, 4-LEVEL MODE control pin selects operating modes. Tie 1kΩ to GND = GEN 1,2 and SAS/SATA (up to 6 Gbps) FLOAT = AUTO Rate Select (for PCIe) Tie 20kΩ to GND = SAS-3 and GEN-3 without De-emphasis Tie 1kΩ to VDD = SAS-3 and GEN-3 with De-emphasis See Table 7 ENSMB = 0 (PIN MODE) (1) 4 LVCMOS inputs without the "FLOAT" conditions must be driven to a logic low or high at all times or operation is not guaranteed. Input edge rate for LVCMOS/FLOAT inputs must be faster than 50 ns from 10–90%. For 3.3V mode operation, VIN pin = 3.3V and the "VDD" for the 4-level input is 3.3V. For 2.5V mode operation, VDD pin = 2.5V and the "VDD" for the 4-level input is 2.5V. Submit Documentation Feedback Copyright © 2013 , Texas Instruments Incorporated Product Folder Links: DS125BR800A DS125BR800A www.ti.com SNLS467 – NOVEMBER 2013 Table 1. Pin Descriptions(1) (continued) Pin Name Pin Number I/O, Type Pin Description SD_TH 26 I, 4-LEVEL Controls the internal Signal Detect Threshold. See Table 6. Control Pins — Both Pin and SMBus Modes (LVCMOS) RXDET 22 I, 4-LEVEL The RXDET pin controls the receiver detect function. Depending on the input level, a 50Ω or >50kΩ termination to the power rail is enabled. See Table 5. RESERVED 23 I, 4-LEVEL Float (leave pin open) = Normal Operation VDD_SEL 25 INPUT Controls the internal regulator FLOAT = 2.5V mode Tie GND = 3.3V mode PWDN 52 I, LVCMOS Tie High = Low power - power down Tie GND = Normal Operation See Table 5. 27 O, LVCMOS Valid Register Load Status Output HIGH = External EEPROM load failed or incomplete LOW = External EEPROM load passed VIN 24 Power In 3.3V mode, feed 3.3V to VIN In 2.5V mode, leave floating VDD 9, 14, 36, 41, 51 Power Power supply pins CML/analog 2.5V mode, connect to 2.5V supply 3.3V mode, connect 0.1uF cap to each VDD pin GND DAP Power Ground pad (DAP - die attach pad) Outputs ALL_DONE Power Submit Documentation Feedback Copyright © 2013 , Texas Instruments Incorporated Product Folder Links: DS125BR800A 5 DS125BR800A SNLS467 – NOVEMBER 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) (2) Supply Voltage (VDD - 2.5V mode) -0.5V to +2.75V Supply Voltage (VIN - 3.3V mode) -0.5V to +4.0V LVCMOS Input/Output Voltage -0.5V to +4.0V CML Input Voltage -0.5V to (VDD+0.5) CML Input Current -30 to +30 mA Junction Temperature 125°C Storage Temperature -40°C to +125°C Lead Temperature Range Soldering (4 sec.) +260°C Derate NJY Package 52.6mW/°C above +25°C ESD Rating HBM, STD - JESD22-A114F 3 kV CDM, STD - JESD22-C101-D Thermal Resistance 1000 V θJC 11.5°C/W θJA, No Airflow, 4 layer JEDEC 19.1°C/W For soldering specifications: see product folder at www.ti.com (1) (2) "Absolute Maximum Ratings" indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. Absolute Maximum Numbers are ensured for a junction temperature range of -40°C to +125°C. Models are validated to Maximum Operating Voltages only. If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications. Recommended Operating Conditions Min Typ Max Unit Supply voltage (2.5V mode) 2.375 2.5 2.625 V Supply voltage (3.3V mode) 3.0 3.3 3.6 V Ambient temperature -40 25 +85 °C SMBus (SDA, SCL) Supply noise up to 50 MHz (1) (1) 3.6 V 100 mVp-p Allowed supply noise (mVp-p sine wave) under typical conditions. Electrical Characteristics (1) (2) (3) Symbol Parameter Test Conditions Power Dissipation Min Typ Max Unit VDD = 2.5 V supply, EQ Enabled, VOD = 1.0 Vp-p, RXDET = 1, PWDN = 0 500 700 mW VIN = 3.3 V supply, EQ Enabled, VOD = 1.0 Vp-p, RXDET = 1, PWDN = 0 660 900 mW 3.6 V Power PD LVCMOS / LVTTL DC Specifications Vih (1) (2) (3) 6 High Level Input Voltage 2.0 Typical values represent most likely parametric norms at VDD = 2.5V, TA = 25°C., and at the Recommended Operation Conditions at the time of product characterization and are not guaranteed. The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not guaranteed. Ensured by device characterization. Submit Documentation Feedback Copyright © 2013 , Texas Instruments Incorporated Product Folder Links: DS125BR800A DS125BR800A www.ti.com SNLS467 – NOVEMBER 2013 Electrical Characteristics(1)(2)(3) (continued) Symbol Parameter Vil Low Level Input Voltage Test Conditions Voh High Level Output Voltage (ALL_DONE pin) Ioh= −4mA Vol Low Level Output Voltage (ALL_DONE pin) Iol= 4mA Iih Input High Current (PWDN pin) VIN = 3.6 V (pin 24), Input under test = 3.6 V Typ 0 Input High Current with internal resistors (4–level input pin) Iil Min Input Low Current (PWDN pin) VIN = 3.6 V (pin 24), Input under test = 0 V Input Low Current with internal resistors (4–level input pin) Max Unit 0.8 V 2.0 V 0.4 V -15 +15 uA +20 +150 uA -15 +15 uA -160 -40 uA CML Receiver Inputs (IN_n+, IN_n-) RLrx-diff RX Differential return loss 0.05 - 7.5 GHz -15 dB 7.5 - 15 GHz -5 dB -10 dB RLrx-cm RX Common mode return loss 0.05 - 5 GHz Zrx-dc RX DC common mode impedance Tested at VDD = 2.5 V 40 50 60 Ω Zrx-diff-dc RX DC differntial mode impedance Tested at VDD = 2.5 V 80 100 120 Ω Vrx-diff-dc Differential RX peak to peak voltage (VID) Tested at pins 0.6 1.0 1.2 V Vrx-signal-det-diff-pp Signal detect assert level for active data signal SD_TH = float, 0101 pattern at 12 Gbps 50 mVp-p Vrx-idle-det-diff-pp Signal detect de-assert level for electrical idle SD_TH = float, 0101 pattern at 12 Gbps 37 mVp-p High Speed Outputs Vtx-diff-pp Output Voltage Differential Swing Differential measurement with OUT_n+ and OUT_n-, terminated by 50Ω to GND, AC-Coupled, VID = 1.0 Vp-p, DEM0 = 1, DEM1 = 0 (4) Vtx-de-ratio_3.5 TX de-emphasis ratio VOD = 1.0 Vp-p, DEM0 = 0, DEM1 = R, Gen 1 and 2 modes only -3.5 dB Vtx-de-ratio_6 TX de-emphasis ratio VOD = 1.0 Vp-p, DEM0 = R, DEM1 = R Gen1 and 2 modes only -6 dB TTX-HF-DJ-DD TX Dj > 1.5 MHz 0.15 UI TTX-LF-RMS TX RMS jitter < 1.5 MHz 3.0 ps RMS TTX-RISE-FALL TX rise/fall time 20% to 80% of differential output voltage TRF-MISMATCH TX rise/fall mismatch 20% to 80% of differential output voltage 0.01 RLTX-DIFF TX Differential return loss 0.05 - 7.5 GHz -15 dB 7.5 - 15 GHz -5 dB 0.05 - 5 GHz -10 dB RLTX-CM TX Common mode return loss ZTX-DIFF-DC DC differential TX impedance VTX-CM-AC-PP TX AC peak-peak common mode voltage VOD = 1.0 Vp-p, DEM0 = 1, DEM1 = 0 ITX-SHORT TX short circuit current limit Total current the transmitter can supply when shorted to VDD or GND (4) 0.8 35 1.0 1.2 Vp-p 45 ps 0.1 UI Ω 100 100 mVpp 20 mA In SAS3 and GEN3 mode the output VOD level is not fixed. It will be adjusted automatically based on the VID input amplitude level. The output VOD level set by DEMA/B[1:0] is dependent on the VID level and the frequency content. The DS125BR800A repeater in SAS3 and GEN3 mode is designed to be transparent, so the TX-FIR (de-emphasis) is passed to the RX to support link training. Submit Documentation Feedback Copyright © 2013 , Texas Instruments Incorporated Product Folder Links: DS125BR800A 7 DS125BR800A SNLS467 – NOVEMBER 2013 www.ti.com Electrical Characteristics(1)(2)(3) (continued) Symbol Parameter Max Unit VTX-CM-DC- Absolute delta of DC common mode voltage during L0 and electrical idle 100 mV Absolute delta of DC common mode voltage between TX+ and TX- 25 mV ACTIVE-IDLE-DELTA VTX-CM-DC-LINEDELTA Test Conditions Min Typ TTX-IDLE-DATA Max time to transition to differential DATA signal after IDLE VID = 1.0 Vp-p, 3 Gbps 3.5 ns TTX-DATA-IDLE Max time to transition to IDLE after differential DATA signal VID = 1.0 Vp-p, 3 Gbps 5.0 ns TPLHD/PHLD Differential Propagation Delay EQ = 00 (5) 200 ps TLSK Lane to lane skew T = 25C, VDD = 2.5V 25 ps TPPSK Part to part propagation delay skew T = 25C, VDD = 2.5V 40 ps DJE1 Residual deterministic jitter at 12 Gbps 30in 5mils FR4, VID = 0.6 Vp-p, PRBS15, EQ = 07'h, DEM = 0 dB 0.18 UI DJE2 Residual deterministic jitter at 8 Gbps 30in 5mils FR4, VID = 0.6 Vp-p, PRBS15,EQ = 07'h, DEM = 0 dB 0.11 UI DJE3 Residual deterministic jitter at 5 Gbps 30in 5mils FR4, VID = 0.6 Vp-p, PRBS15, EQ = 07'h, DEM = 0 dB 0.07 UI DJE4 Residual deterministic jitter at 12 Gbps 5m 30 awg cable, VID = 0.6 Vp-p, PRBS15, EQ = 07'h, DEM = 0 dB 0.25 UI DJE5 Residual deterministic jitter at 5 Gbps 8m 30 awg cable, VID = 0.6 Vp-p, PRBS15, EQ = 0F'h, DEM = 0 dB 0.33 UI Input Channel: 20in 5mils FR4, Output Channel: 10in 5mils FR4 VID = 0.6 Vp-p, PRBS15, EQ = 03'h, VOD = 1.0 Vp-p, DEM = −3.5 dB 0.1 UI Equalization De-emphasis (GEN 1,2 mode only) DJD1 (5) 8 Residual deterministic jitter at 12 Gbps Propagation Delay measurements will change slightly based on the level of EQ selected. EQ = 00 will result in the shortest propagation delays. Submit Documentation Feedback Copyright © 2013 , Texas Instruments Incorporated Product Folder Links: DS125BR800A DS125BR800A www.ti.com SNLS467 – NOVEMBER 2013 Electrical Characteristics — Serial Management Bus Interface Over recommended operating supply and temperature ranges unless other specified. Symbol Parameter Conditions Min Typ Max Unit 0.8 V 3.6 V SERIAL BUS INTERFACE DC SPECIFICATIONS VIL Data, Clock Input Low Voltage SDA and SCL VIH Data, Clock Input High Voltage SDA and SCL IPULLUP Current Through Pull-Up Resistor or Current Source High Power Specification VDD Nominal Bus Voltage ILEAK-Bus Input Leakage Per Bus Segment ILEAK-Pin Input Leakage Per Device Pin CI Capacitance for SDA and SCL (1) (2) RTERM External Termination Resistance pull to VDD = 2.5V ± 5% OR 3.3V ± 10% Pullup VDD = 3.3V (1) (2) (3) Pullup VDD = 2.5V (1) (2) (3) 2.1 (1) 4 mA 2.375 3.6 V -200 +200 µA -15 µA 10 pF 2000 Ω 1000 Ω SERIAL BUS INTERFACE TIMING SPECIFICATIONS FSMB Bus Operating Frequency ENSMB = VDD (Slave Mode) TBUF Bus Free Time Between Stop and Start Condition THD:STA Hold time after (Repeated) Start Condition. After this period, the first clock is generated. ENSMB = FLOAT (Master Mode) 280 400 400 kHz 520 kHz 1.3 µs 0.6 µs At IPULLUP, Max TSU:STA Repeated Start Condition Setup Time 0.6 µs TSU:STO Stop Condition Setup Time 0.6 µs THD:DAT Data Hold Time 0 ns TSU:DAT Data Setup Time 100 ns TLOW Clock Low Period THIGH Clock High Period (4) tF Clock/Data Fall Time tR Clock/Data Rise Time tPOR Time in which a device must be operational after power-on reset (1) (2) (3) (4) (5) 1.3 0.6 µs 50 µs (4) 300 ns (4) 300 ns 500 ms (4) (5) Recommended value. Recommended maximum capacitance load per bus segment is 400pF. Maximum termination voltage should be identical to the device supply voltage. Compliant to SMBus 2.0 physical layer specification. See System Management Bus (SMBus) Specification Version 2.0, section 3.1.1 SMBus common AC specifications for details. Ensured by Design. Parameter not tested in production. Submit Documentation Feedback Copyright © 2013 , Texas Instruments Incorporated Product Folder Links: DS125BR800A 9 DS125BR800A SNLS467 – NOVEMBER 2013 www.ti.com TIMING DIAGRAMS (OUT+) 80% 80% VOD (p-p) = (OUT+) ± (OUT-) 0V 20% 20% (OUT-) tRISE tFALL Figure 2. CML Output and Rise and FALL Transition Time + IN 0V tPLHD tPHLD + OUT 0V - Figure 3. Propagation Delay Timing Diagram + IN 0V DATA tDATA-IDLE tIDLE-DATA + OUT 0V DATA IDLE IDLE Figure 4. Transmit IDLE-DATA and DATA-IDLE Response Time tLOW tR tHIGH SCL tHD:STA tBUF tHD:DAT tF tSU:STA tSU:DAT tSU:STO SDA SP ST ST SP Figure 5. SMBus Timing Parameters 10 Submit Documentation Feedback Copyright © 2013 , Texas Instruments Incorporated Product Folder Links: DS125BR800A DS125BR800A www.ti.com SNLS467 – NOVEMBER 2013 FUNCTIONAL DESCRIPTION The DS125BR800A compensates for lossy FR-4 printed circuit board backplanes and balanced cables. The DS125BR800A operates in 3 modes: Pin Control Mode (ENSMB = 0), SMBus Slave Mode (ENSMB = 1) and SMBus Master Mode (ENSMB = float) to load register information from external EEPROM; please refer to SMBUS Master Mode for additional information. Pin Control Mode: When in pin mode (ENSMB = 0), equalization and de-emphasis can be selected via pin for each side independently. When de-emphasis is asserted VOD is automatically adjusted per Table 4. For PCIe applications, the RXDET pins provides automatic and manual control for input termination (50Ω or >50KΩ). MODE setting is also pin controllable with pin selections (Gen 1/2, auto detect and SAS-3 / PCIe Gen 3). The receiver electrical idle detect threshold is also adjustable via the SD_TH pin. SMBUS Mode: When in SMBus mode (ENSMB = 1), the VOD (output amplitude), equalization, de-emphasis, and termination disable features are all programmable on a individual lane basis, instead of grouped by A or B as in the pin mode case. Upon assertion of ENSMB, the EQx and DEMx functions revert to register control immediately. The EQx and DEMx pins are converted to AD0-AD3 SMBus address inputs. The other external control pins (MODE, RXDET and SD_TH) remain active unless their respective registers are written to and the appropriate override bit is set, in which case they are ignored until ENSMB is driven low (pin mode). On power-up and when ENSMB is driven low all registers are reset to their default state. If PWDN is asserted while ENSMB is high, the registers retain their current state. Equalization settings accessible via the pin controls were chosen to meet the needs of most PCIe applications. If additional fine tuning or adjustment is needed, additional equalization settings can be accessed via the SMBus registers. Each input has a total of 256 possible equalization settings. The tables show the 16 setting when the device is in pin mode. When using SMBus mode, the equalization, VOD and de-Emphasis levels are set by registers. The 4-Level input pins utilize a resistor divider to help set the 4 valid levels and provide a wider range of control settings when ENSMB=0. There is an internal 30K pull-up and a 60K pull-down connected to the package pin. These resistors, together with the external resistor connection combine to achieve the desired voltage level. Using the 1K pull-up, 1K pull-down, no connect, and 20K pull-down provide the optimal voltage levels for each of the four input states. Table 2. 4-Level Control Pin Settings Level Setting 3.3V Mode 2.5V Mode 0 Tie 1kΩ to GND 0.10 V 0.08 V 1/3 x VDD R Tie 20kΩ to GND 1/3 x VIN Float Float (leave pin open) 2/3 x VIN 2/3 x VDD 1 Tie 1kΩ to VDD VIN - 0.05 V VDD - 0.04 V Typical 4-Level Input Thresholds • Level 1 - 2 = 0.2 * VIN or VDD • Level 2 - 3 = 0.5 * VIN or VDD • Level 3 - 4 = 0.8 * VIN or VDD In order to minimize the startup current associated with the integrated 2.5V regulator the 1K pull-up / pull-down resistors are recommended. If several 4 level inputs require the same setting, it is possible to combine two or more 1K resistors into a single lower value resistor. As an example; combining two inputs with a single 500 Ohm resistor is a good way to save board space. Submit Documentation Feedback Copyright © 2013 , Texas Instruments Incorporated Product Folder Links: DS125BR800A 11 DS125BR800A SNLS467 – NOVEMBER 2013 www.ti.com 3.3V or 2.5V Supply Mode Operation The DS125BR800A has an optional internal voltage regulator to provide the 2.5V supply to the device. In 3.3V mode operation, the VIN pin = 3.3V is used to supply power to the device. The internal regulator will provide the 2.5V to the VDD pins of the device and a 0.1 uF cap is needed at each of the 5 VDD pins for power supply decoupling (total capacitance should be ≤0.5 uF), and the VDD pins should be left open. The VDD_SEL pin must be tied to GND to enable the internal regulator. In 2.5V mode operation, the VIN pin should be left open and 2.5V supply must be applied to the 5 VDD pins to power the device. The VDD_SEL pin must be left open (no connect) to disable the internal regulator. 3.3V mode 2.5V mode VDD_SEL Enable VDD_SEL open VIN open Disable 3.3V 1 uF VIN 10 uF Internal voltage regulator 2.5V VDD VDD 0.1 uF 0.1 uF VDD VDD 0.1 uF 0.1 uF 1 uF 2.5V Capacitors can be either tantalum or an ultra-low ESR seramic. 10 uF Internal voltage regulator Capacitors can be either tantalum or an ultra-low ESR seramic. VDD VDD 0.1 uF 0.1 uF VDD VDD 0.1 uF 0.1 uF VDD VDD 0.1 uF 0.1 uF Place 0.1 uF close to VDD Pin Total capacitance should be 7 0.5 uF Place capcitors close to VDD Pin Figure 6. 3.3V or 2.5V Supply Connection Diagram PCIE SIGNAL INTEGRITY When using the DS125BR800A in PCIe GEN-3 systems, there are specific signal integrity settings to ensure signal integrity margin. The settings were achieved with completing extensive testing. Please contact your field representative for more information regarding the testing completed to achieve these settings. For tuning the in the downstream direction (from CPU to EP). • EQ: use the guidelines outlined in Table 3. • De-Emphasis: use the guidelines outlined in Table 4. • VOD: use the guidelines outlined in Table 4. For tuning in the upstream direction (from EP to CPU). • EQ: use the guidelines outlined in Table 3. • De-Emphasis: – For trace lengths < 15" set to -3.5 dB – For trace lengths > 15" set to -6 dB • VOD: set to 900 mV 12 Submit Documentation Feedback Copyright © 2013 , Texas Instruments Incorporated Product Folder Links: DS125BR800A DS125BR800A www.ti.com SNLS467 – NOVEMBER 2013 Table 3. Equalizer Settings Level EQA1 EQB1 EQA0 EQB EQ – 8 bits [7:0] dB at 1.5 GHz dB at 2.5 GHz dB at 4 GHz dB at 6 GHz Suggested Use (1) 1 0 0 0000 0000 = 0x00 2.5 3.5 3.8 3.1 FR4 < 5 inch trace 2 0 R 0000 0001 = 0x01 3.8 5.4 6.7 6.7 FR4 5-10 inch trace 3 0 Float 0000 0010 = 0x02 5.0 7.0 8.4 8.4 FR4 10 inch trace 4 0 1 0000 0011 = 0x03 5.9 8.0 9.3 9.1 FR4 15-20 inch trace 5 R 0 0000 0111 = 0x07 7.4 10.3 12.8 13.7 FR4 20-30 inch trace 6 R R 0001 0101 = 0x15 6.9 10.2 13.9 16.2 FR4 25-30 inch trace 7 R Float 0000 1011 = 0x0B 9.0 12.4 15.3 15.9 FR4 25-30 inch trace 8 R 1 0000 1111 = 0x0F 10.2 13.8 16.7 17.0 8m, 30awg cable 9 Float 0 0101 0101 = 0x55 8.5 12.6 17.5 20.7 > 8m cable 10 Float R 0001 1111 = 0x1F 11.7 16.2 20.3 21.8 11 Float Float 0010 1111 = 0x2F 13.2 18.3 22.8 23.6 12 Float 1 0011 1111 = 0x3F 14.4 19.8 24.2 24.7 13 1 0 1010 1010 = 0xAA 14.4 20.5 26.4 28.0 14 1 R 0111 1111 = 0x7F 16.0 22.2 27.8 29.2 15 1 Float 1011 1111 = 0xBF 17.6 24.4 30.2 30.9 16 1 1 1111 1111 = 0xFF 18.7 25.8 31.6 31.9 (1) Cable and FR4 lengths are for reference only. FR4 lengths based on a 100 Ohm differential stripline with 5-mil traces and 8-mil trace separation. Optimal EQ setting should be determined via simulation and prototype verification. Table 4. Output Voltage and De-emphasis Settings (1) (2) Level DEMA1 DEMB1 DEMA0 DEMB0 VOD Vp-p DEM dB (1) Inner Amplitude Vp-p Suggested Use (2) 1 0 0 0.8 0 0.8 FR4
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