DS250DF810ABVT

Order Now Product Folder Support & Community Tools & Software Technical Documents DS250DF810 SNLS513C – DECEMBER 2015 – REVISED OCTOBER 2019 DS250DF810 25 Gbps Multi-Rate 8-Channel Retimer 1 Features 2 Applications • • • • 1 • • • • • • • • • • • • Octal-channel multi-rate retimer with integrated signal conditioning All channels lock independently from 20.2752 to 25.8 Gbps (including sub-rates like 10.3125 Gbps, 12.5 Gbps, and more) Ultra-low latency: 10 MHz, sinusoidal TrampVDD VDD supply ramp time, from 0V to 2.375V 150 TJ Operating junction temperature -40 110 ºC TA Operating ambient temperature -40 85 (2) ºC VIO2.5V 2.5 V I/O voltage (LVCMOS, CMOS and Analog) 2.375 2.625 V VIO3.3V,INT_N Open Drain LVCMOS I/O voltage (INT_N) 3.6 V VIO3.3V Open Drain LVCMOS I/O voltage (SDA, SDC) 3.6 V (1) (2) 2.375 μs Steps must be taken to ensure the combined AC plus DC supply noise meets the specified VDD supply voltage limits. Steps must be taken to ensure the operating junction temperature range is met. Submit Documentation Feedback Copyright © 2015–2019, Texas Instruments Incorporated Product Folder Links: DS250DF810 7 DS250DF810 SNLS513C – DECEMBER 2015 – REVISED OCTOBER 2019 www.ti.com 8.4 Thermal Information CONDITIONS/ ASSUMPTIONS (2) THERMAL METRIC (1) 4-layer JEDEC Board 10-layer 8in x 6in Board 20-layer 8in x 6in Board 30-layer 8in x 6in Board RθJA Junction-to-ambient thermal resistance 26.4 9.3 8.5 8.2 RθJC(top) Junction-to-case (top) thermal resistance 1.6 - - - RθJB Junction-to-board thermal resistance 9.3 - - - ΨJT Junction-to-top characterization parameter 0.1 0.1 0.1 0.1 ΨJB Junction-to-board characterization parameter 9.3 5 4.9 4.6 (1) (2) UNIT °C/W For more information about traditional and new thermal metrics, see the IC Package-Thermal Metrics application report, SPRA953. No heat sink or airflow was assumed for these estimations. Depending on the application, a heat sink, faster airflow, and/or reduced ambient temperature (