DS26C32ATM/NOPB

DS26C32AM, DS26C32AT www.ti.com SNLS382C – JUNE 1998 – REVISED APRIL 2013 DS26C32AT/DS26C32AM Quad Differential Line Receiver Check for Samples: DS26C32AM, DS26C32AT FEATURES DESCRIPTION • • The DS26C32A is a quad differential line receiver designed to meet the RS-422, RS-423, and Federal Standards 1020 and 1030 for balanced and unbalanced digital data transmission, while retaining the low power characteristics of CMOS. 1 2 • • • • • • • CMOS Design for Low Power ±0.2V Sensitivity over Input Common Mode Voltage Range Typical Propagation Delays: 19 ns Typical Input hysteresis: 60 mV Inputs Won't Load Line When VCC = 0V Meets the Requirements of EIA Standard RS422 TRI-STATE Outputs for Connection to System Buses Available in Surface Mount Mil-Std-883C Compliant The DS26C32A has an input sensitivity of 200 mV over the common mode input voltage range of ±7V. The DS26C32A features internal pull-up and pulldown resistors which prevent output oscillation on unused channels. The DS26C32A provides an enable and disable function common to all four receivers. It also features TRI-STATE outputs with 6 mA source and sink capability. This product is pin compatible with the DS26LS32A and the AM26LS32. Logic Diagram 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 1998–2013, Texas Instruments Incorporated DS26C32AM, DS26C32AT SNLS382C – JUNE 1998 – REVISED APRIL 2013 www.ti.com Connection Diagrams Top View For Complete Military Product Specifications, refer to the appropriate SMD or MDS. Figure 1. PDIP Package See Package Number D0016A or NFG0016E See Package Number NAJ0020A, NFE0016A or NAD0016A Top View Figure 2. 20-Lead Ceramic Leadless Chip Carrier LCCC Package These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 2 Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated Product Folder Links: DS26C32AM DS26C32AT DS26C32AM, DS26C32AT www.ti.com SNLS382C – JUNE 1998 – REVISED APRIL 2013 Absolute Maximum Ratings (1) (2) (3) Supply Voltage (VCC) 7V Common Mode Range (VCM) ±14V Differential Input Voltage (V DIFF) ±14V Enable Input Voltage (V IN) 7V −65°C to +150°C Storage Temperature Range (T STG) Lead Temperature (Soldering 4 sec.) Maximum Power Dissipation at 25°C 260°C (4) Ceramic NFE0016A Package 2308 mW Plastic NFG0016E Package 1645 mW SOIC D0016A Package 1190 mW Ceramic NAJ0020A Package 2108 mW Ceramic NAD0016A Package 1215 mW Maximum Current Per Output ±25 mA This device does not meet 2000V ESD rating. (5) (1) Absolute Maximum Ratings are those values beyond which the safety of the device cannot be ensured. They are not meant to imply that the device should be operated at these limits. The table of “Electrical Characteristics” provides conditions for actual device operation. Unless otherwise specified, all voltages are referenced to ground. If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications Ratings apply to ambient temperature at 25°C. Above this temperature derate N Package 13.16 mW/°C, J Package 15.38 mW/°C, M Package 9.52 mW/°C, E Package 12.04 mW/°C, and W package 6.94 mW/°C. ESD Rating: HBM (1.5 kΩ, 100 pF) Inputs ≥2000V All other pins ≥1000V EIAJ (0Ω, 200 pF) ≥350V (2) (3) (4) (5) Operating Conditions Supply Voltage (VCC) Min Max Units 4.50 5.50 V Operating Temperature Range (TA) DS26C32AT −40 +85 °C DS26C32AM −55 +125 °C 500 ns Enable Input Rise or Fall Times DC Electrical Characteristics VCC = 5V ±10% (unless otherwise specified) (1) Parameter Test Conditions Min Typ Max Units −200 35 +200 mV VTH Minimum Differential Input Voltage V OUT = VOH or VOL −7V < VCM < +7V RIN Input Resistance VIN = −7V, +7V (Other Input = GND) DS26C32AT 5.0 6.8 10 kΩ DS26C32AM 4.5 6.8 11 kΩ VIN = +10V, Other Input = GND DS26C32AT +1.1 +1.5 mA DS26C32AM +1.1 +1.8 mA VIN = −10V, Other Input = GND DS26C32AT −2.0 −2.5 mA −2.0 −2.7 mA IIN VOH VOL Input Current Minimum High Level Output Voltage V CC = Min, VDIFF = +1V Maximum Low Level Output Voltage V CC = Max, VDIFF = −1V VIH Minimum Enable High Input Level Voltage VIL Maximum Enable Low Input Level Voltage (1) DS26C32AM 3.8 4.2 V I OUT = −6.0 mA 0.2 0.3 V I OUT = 6.0 mA 2.0 V 0.8 V Absolute Maximum Ratings are those values beyond which the safety of the device cannot be ensured. They are not meant to imply that the device should be operated at these limits. The table of “Electrical Characteristics” provides conditions for actual device operation. Copyright © 1998–2013, Texas Instruments Incorporated Product Folder Links: DS26C32AM DS26C32AT Submit Documentation Feedback 3 DS26C32AM, DS26C32AT SNLS382C – JUNE 1998 – REVISED APRIL 2013 www.ti.com DC Electrical Characteristics (continued) VCC = 5V ±10% (unless otherwise specified)(1) Parameter Test Conditions Min Typ Max Units ±0.5 ±5.0 μA ±1.0 μA IOZ Maximum TRI-STATE Output Leakage Current V OUT = VCC or GND, ENABLE = VIL, ENABLE = VIH II Maximum Enable Input Current V IN = VCC or GND ICC Quiescent Power Supply Current VCC = Max, DS26C32AT 16 23 mA VDIF = +1V DS26C32AM 16 25 mA Input Hysteresis V CM = 0V VHYST 60 mV AC Electrical Characteristics VCC = 5V ±10% (1) Parameter tPLH, tPHL Test Conditions Propagation Delay Input to Output CL = 50 pF Min Typ 10 Max Units DS26C32AT DS26C32AM 19 30 35 ns 4 9 9 ns 13 22 29 ns 13 23 29 ns VDIFF = 2.5V VCM = 0V tRISE, tFALL Output Rise and Fall Times tPLZ, tPHZ Propagation Delay ENABLE to Output tPZL, tPZH Propagation Delay ENABLE to Output CL = 50 pF VDIFF = 2.5V VCM = 0V CL = 50 pF RL = 1000Ω VDIFF = 2.5V CL = 50 pF RL = 1000Ω VDIFF = 2.5V (1) Unless otherwise specified, Min/Max limits apply over recommended operating conditions. All typicals are given for VCC = 5V and TA = 25°C. Comparison Table of Switching Characteristics into “LS-Type” Load (Figure 6, Figure 7, and Figure 8) (1) Parameter tPLH Input to Output Test Conditions CL = 15 pF tPHL tLZ ENABLE to Output CL = 5 pF ENABLE to Output CL = 15 pF tHZ tZL tZH (1) 4 DS26C32A DS26LS32A Typ Typ 17 23 ns 19 23 ns 13 15 ns 12 20 ns 13 14 ns 13 15 ns Units This table is provided for comparison purposes only. The values in this table for the DS26C32A reflect the performance of the device, but are not tested. Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated Product Folder Links: DS26C32AM DS26C32AT DS26C32AM, DS26C32AT www.ti.com SNLS382C – JUNE 1998 – REVISED APRIL 2013 TEST AND SWITCHING WAVEFORMS Figure 3. Propagation Delay CL includes load and test jig capacitance. S1 = VCC for t PZL, and tPLZ measurements. S1 = Gnd for tPZH and tPHZ measurements. Figure 4. Test Circuit for TRI-STATE Output Tests Figure 5. TRI-STATE Output Enable and Disable Waveforms AC Test Circuit and Switching Time Waveforms Figure 6. Load Test Circuit for TRI-STATE Outputs for “LS-Type” Load Copyright © 1998–2013, Texas Instruments Incorporated Product Folder Links: DS26C32AM DS26C32AT Submit Documentation Feedback 5 DS26C32AM, DS26C32AT SNLS382C – JUNE 1998 – REVISED APRIL 2013 www.ti.com Figure 7. Propagation Delay for “LS-Type” Load (1) Diagram shown for ENABLE low. (2) S1 and S2 of load circuit are closed except where shown. (3) Pulse generator for all pulses: Rate ≤ 1.0 MHz; ZO = 50Ω; tr ≤ 15 ns; t f ≤ 6.0 ns. Figure 8. Enable and Disable Times for “LS-Type” Load Truth Table (1) ENABLE ENABLE Input Output L H X Z VID ≥ V TH (Max) H All Other Combinations of Enable Inputs (1) VID ≤ V TH (Min) L Open H Z = TRI-STATE TYPICAL APPLICATIONS Figure 9. Two-Wire Balanced Systems, RS-422 6 Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated Product Folder Links: DS26C32AM DS26C32AT DS26C32AM, DS26C32AT www.ti.com SNLS382C – JUNE 1998 – REVISED APRIL 2013 Typical Performance Characteristics Differential Propagation Delay vs Temperature Differential Propagation Delay vs Power Supply Voltage Figure 10. Figure 11. Differential Skew vs Temperature Differential Skew vs Power Supply Voltage Figure 12. Figure 13. Output High Voltage vs Output High Current Output High Voltage vs Output High Current Figure 14. Figure 15. Copyright © 1998–2013, Texas Instruments Incorporated Product Folder Links: DS26C32AM DS26C32AT Submit Documentation Feedback 7 DS26C32AM, DS26C32AT SNLS382C – JUNE 1998 – REVISED APRIL 2013 www.ti.com Typical Performance Characteristics (continued) 8 Output Low Voltage vs Output Low Current Output Low Voltage vs Output Low Current Figure 16. Figure 17. Input Resistance vs Input Voltage Input Current vs Power Supply Voltage Figure 18. Figure 19. Hysteresis & Differential Transition Voltage vs Temperature Hysteresis & Differential Transition Voltage vs Power Supply Voltage Figure 20. Figure 21. Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated Product Folder Links: DS26C32AM DS26C32AT DS26C32AM, DS26C32AT www.ti.com SNLS382C – JUNE 1998 – REVISED APRIL 2013 Typical Performance Characteristics (continued) Supply Current vs Temperature Disabled Supply Current vs Power Supply Voltage Figure 22. Figure 23. Supply Current vs Data Rate Figure 24. Copyright © 1998–2013, Texas Instruments Incorporated Product Folder Links: DS26C32AM DS26C32AT Submit Documentation Feedback 9 DS26C32AM, DS26C32AT SNLS382C – JUNE 1998 – REVISED APRIL 2013 www.ti.com REVISION HISTORY Changes from Revision B (April 2013) to Revision C • 10 Page Changed layout of National Data Sheet to TI format ............................................................................................................ 9 Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated Product Folder Links: DS26C32AM DS26C32AT PACKAGE OPTION ADDENDUM www.ti.com 23-Aug-2017 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) DS26C32ATM LIFEBUY SOIC D 16 48 TBD Call TI Call TI -40 to 85 DS26C32ATM DS26C32ATM/NOPB ACTIVE SOIC D 16 48 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 DS26C32ATM DS26C32ATMX LIFEBUY SOIC D 16 2500 TBD Call TI Call TI -40 to 85 DS26C32ATM DS26C32ATMX/NOPB ACTIVE SOIC D 16 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 DS26C32ATM (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of