DS90LV011AQ
www.ti.com
SNLS296D – MAY 2008 – REVISED APRIL 2013
DS90LV011AQ Automotive LVDS Differential Driver
Check for Samples: DS90LV011AQ
FEATURES
DESCRIPTION
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The DS90LV011AQ is an LVDS driver optimized for
high data rate and low power applications. The
DS90LV011AQ is a current mode driver allowing
power dissipation to remain low even at high
frequency. In addition, the short circuit fault current is
also minimized. The device is designed to support
data rates in excess of 400Mbps (200MHz) utilizing
Low
Voltage
Differential
Signaling
(LVDS)
technology.
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2
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AECQ-100 Grade 1
Conforms to TIA/EIA-644-A Standard
>400Mbps (200MHz) Switching Rates
700 ps (100 ps typical) Maximum Differential
Skew
1.5 ns Maximum Propagation Delay
Single 3.3V Power Supply
±350 mV Differential Signaling
Power Off Protection (Outputs in TRI-STATE)
Pinout Simplifies PCB Layout
Low Power Dissipation (23 mW @ 3.3V
Typical)
SOT-23 5-Lead Package
Pin Compatible with SN65LVDS1
The device is offered in a 5-lead SOT-23 package.
The LVDS outputs have been arranged for easy PCB
layout. The differential driver outputs provide low EMI
with its typical low output swing of 350 mV. The
DS90LV011AQ can be paired with its companion
single line receiver, the DS90LT012AQ, or with any of
TI's LVDS receivers, to provide a high-speed LVDS
interface.
Connection Diagram
Figure 1. Top View
See Package Number MF05A
Functional Diagram
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2008–2013, Texas Instruments Incorporated
DS90LV011AQ
SNLS296D – MAY 2008 – REVISED APRIL 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1) (2)
−0.3V to 4.0V
Supply Voltage (VDD)
−0.3V to to (VDD + 0.3V)
LVCMOS input voltage (TTL IN)
−0.3V to +3.9V
LVDS output voltage (OUT±)
LVDS output short circuit current
24mA
Maximum Package Power Dissipation @ +25°C
DBV Package
794 mW
Derate DBV Package
7.22 mW/°C above +25°C
Package Thermal Resistance (4-Layer, 2 oz. Cu, JEDEC)
θJA
138.5°C/Watt
θJC
107.0°C/Watt
−65°C to +150°C
Storage Temperature
Lead Temperature Range Soldering
(4 sec.)
+260°C
Maximum Junction Temperature
+135°C
ESD Ratings
HBM
MM
CDM
(1)
(2)
(3)
(4)
(5)
(3)
≥ 8kV
(4)
≥ 250V
(5)
≥ 1250V
Absolute Maximum Ratings are those values beyond which the safety of the device cannot be ensured. They are not meant to imply that
the devices should be operated at these limits. Electrical Characteristics specifies conditions of device operation.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
Human Body Model, applicable std. JESD22-A114C
Machine Model, applicable std. JESD22-A115-A
Field Induced Charge Device Model, applicable std. JESD22-C101-C
Recommended Operating Conditions
Min
Typ
Max
Supply Voltage (VDD)
3.0
3.3
3.6
Units
V
Temperature (TA)
−40
+25
+125
°C
Electrical Characteristics
Over Supply Voltage and Operating Temperature ranges, unless otherwise specified. (1) (2) (3)
Symbol
Parameter
|VOD|
Output Differential Voltage
ΔVOD
VOD Magnitude Change
VOS
Offset Voltage
ΔVOS
Offset Magnitude Change
IOFF
Power-off Leakage
Conditions
(4)
Output Short Circuit Current
IOSD
Differential Output Short Circuit
Current (4)
COUT
Output Capacitance
(2)
(3)
(4)
2
Min
Typ
Max
Units
250
350
450
mV
3
35
mV
1.125
1.22
1.375
V
0
1
25
mV
VOUT = 3.6V or GND, VDD = 0V
±1
±10
μA
VOUT+ and VOUT− = 0V
−6
−24
mA
VOD = 0V
−5
−12
mA
RL = 100Ω
(Figure 2)
IOS
(1)
Pin
OUT+,
OUT−
RL = 100Ω
(Figure 2 and Figure 3)
3
pF
Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground
except VOD.
All typicals are given for: VDD = +3.3V and TA = +25°C.
The DS90LV011AQ is a current mode device and only function with datasheet specification when a resistive load is applied to the
drivers outputs.
Output short circuit current (IOS) is specified as magnitude only, minus sign indicates direction only.
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Product Folder Links: DS90LV011AQ
DS90LV011AQ
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SNLS296D – MAY 2008 – REVISED APRIL 2013
Electrical Characteristics (continued)
Over Supply Voltage and Operating Temperature ranges, unless otherwise specified.(1)(2)(3)
Symbol
Parameter
Conditions
Pin
Min
Max
Units
2.0
VDD
V
GND
0.8
V
TTL IN
Typ
VIH
Input High Voltage
VIL
Input Low Voltage
IIH
Input High Current
VIN = 3.3V or 2.4V
±2
±10
μA
IIL
Input Low Current
VIN = GND or 0.5V
±1
±10
μA
VCL
Input Clamp Voltage
ICL = −18 mA
CIN
Input Capacitance
IDD
Power Supply Current
No Load
−1.5
VIN = VDD or GND
VDD
−0.6
V
3
pF
5
8
mA
7
10
mA
Min
Typ
Max
Units
RL = 100Ω
Switching Characteristics
Over Supply Voltage and Operating Temperature Ranges, unless otherwise specified. (1) (2) (3) (4)
Symbol
Parameter
Conditions
tPHLD
Differential Propagation Delay High to Low
RL = 100Ω, CL = 15 pF
0.3
1.0
1.5
ns
tPLHD
Differential Propagation Delay Low to High
(Figure 4 and Figure 5)
0.3
1.1
1.5
ns
tSKD1
Differential Pulse Skew |tPHLD − tPLHD|
0
0.1
0.7
ns
tSKD3
Differential Part to Part Skew
(6)
0
0.2
1.0
ns
tSKD4
Differential Part to Part Skew
(7)
0
0.4
1.2
ns
tTLH
Transition Low to High Time
0.2
0.5
1.0
ns
tTHL
Transition High to Low Time
0.2
0.5
1.0
ns
fMAX
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Maximum Operating Frequency
(5)
(8)
250
MHz
All typicals are given for: VDD = +3.3V and TA = +25°C.
These parameters are ensured by design. The limits are based on statistical analysis of the device performance over PVT (process,
voltage, temperature) ranges.
CL includes probe and fixture capacitance.
Generator waveform for all tests unless otherwise specified: f = 1 MHz, ZO = 50Ω, tr ≤ 1 ns, tf ≤ 1 ns (10%-90%).
tSKD1, |tPHLD − tPLHD|, is the magnitude difference in differential propagation delay time between the positive going edge and the negative
going edge of the same channel.
tSKD3, Differential Part to Part Skew, is defined as the difference between the minimum and maximum specified differential propagation
delays. This specification applies to devices at the same VDD and within 5°C of each other within the operating temperature range.
tSKD4, part to part skew, is the differential channel to channel skew of any event between devices. This specification applies to devices
over recommended operating temperature and voltage ranges, and across process distribution. tSKD4 is defined as |Max − Min|
differential propagation delay.
fMAX generator input conditions: tr = tf < 1 ns (0% to 100%), 50% duty cycle, 0V to 3V. Output criteria: duty cycle = 45%/55%, VOD >
250mV.
Parameter Measurement Information
Figure 2. Differential Driver DC Test Circuit
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Copyright © 2008–2013, Texas Instruments Incorporated
Product Folder Links: DS90LV011AQ
3
DS90LV011AQ
SNLS296D – MAY 2008 – REVISED APRIL 2013
www.ti.com
Parameter Measurement Information (continued)
Figure 3. Differential Driver Full Load DC Test Circuit
Figure 4. Differential Driver Propagation Delay and Transition Time Test Circuit
Figure 5. Differential Driver Propagation Delay and Transition Time Waveforms
APPLICATION INFORMATION
DEVICE PIN DESCRIPTIONS
Package Pin Number
SOT-23
4
Pin Name
Description
5
TTL IN
LVTTL/LVCMOS driver input pins
4
OUT+
Non-inverting driver output pin
3
OUT−
Inverting driver output pin
2
GND
Ground pin
1
VDD
Power supply pin, +3.3V ± 0.3V
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Copyright © 2008–2013, Texas Instruments Incorporated
Product Folder Links: DS90LV011AQ
DS90LV011AQ
www.ti.com
SNLS296D – MAY 2008 – REVISED APRIL 2013
REVISION HISTORY
Changes from Revision C (April 2013) to Revision D
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Page
Changed layout of National Data Sheet to TI format ............................................................................................................ 4
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Copyright © 2008–2013, Texas Instruments Incorporated
Product Folder Links: DS90LV011AQ
5
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
DS90LV011AQMF/NOPB
ACTIVE
SOT-23
DBV
5
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
N01Q
DS90LV011AQMFE/NOPB
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
N01Q
DS90LV011AQMFX/NOPB
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
N01Q
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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