ESD1LIN24-Q1, ESD751-Q1, ESD761-Q1
SLVSGS4C – SEPTEMBER 2022 – REVISED DECEMBER 2022
ESD1LIN24-Q1, ESD751-Q1, and ESD761-Q1 Automotive 24-V, 1-Channel ESD
Protection Diodes for In-Vehicle Networks
1 Features
3 Description
•
The ESD1LIN24-Q1, ESD751-Q1, and ESD761-Q1
are single-channel low capacitance bidirectional ESD
protection devices for local interconnect network
(LIN). These devices are rated to dissipate contact
ESD strikes beyond the maximum level specified
in the IEC 61000-4-2 international standard (±30kV Contact, ±30-kV Airgap), (±22-kV Contact, ±22kV Airgap), and (±15-kV Contact, ±15-kV Airgap),
respectively. The low dynamic resistance and low
clamping voltage help protect systems against
transient events. This protection is key as automotive
systems require a high level of robustness and
reliability when they control safety devices.
•
•
•
•
•
•
•
•
•
IEC 61000-4-2 level 4 ESD protection:
– ±30-kV, ±22-kV or ±15-kV contact discharge
– ±30-kV, ±22-kV or ±15-kV air-gap discharge
ISO 10605 (330 pF, 330 Ω) ESD protection:
– ±30-kV, ±22-kV or ±15-kV contact discharge
– ±30-kV, ±22-kV or ±15-kV air-gap discharge
24-V working voltage
Bidirectional ESD protection
Low clamping voltage protects downstream
components
AEC-Q101 qualified
Temperature range: –55°C to +150°C
I/O capacitance = 2.3 pF, 1.6 pF, or 1.1 pF (typical)
Offered in industry standard packages: SOD-323
(DYF), SOD-523 (DYA), and 0402 size leadless
package (DPY)
Leaded packages used for automatic optical
inspection (AOI)
2 Applications
•
•
Automotive in-vehicle networks:
– Local interconnect network (LIN)
– Single line CAN ESD protection
Industrial control networks:
– DeviceNet
– Smart distribution systems
The ESD1LIN24-Q1 and ESD751-Q1 are both offered
in leaded packages for easy flow through routing.
Package Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
ESD1LIN24-Q1
DYF (SOD-323, 2)
2.50 mm × 1.20 mm
ESD751-Q1
DYA (SOD-523, 2)
1.60 mm × 0.80 mm
ESD761-Q1
DPY (X1SON, 2)
1.00 mm × 0.60 mm
(1)
For all available packages, see the orderable addendum at
the end of the data sheet.
A
(for exa
Typical Application
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
ESD1LIN24-Q1, ESD751-Q1, ESD761-Q1
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SLVSGS4C – SEPTEMBER 2022 – REVISED DECEMBER 2022
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings........................................ 4
6.2 ESD Ratings—AEC Specification............................... 4
6.3 ESD Ratings—IEC Specification................................ 4
6.4 ESD Ratings - ISO Specification.................................5
6.5 Recommended Operating Conditions.........................5
6.6 Thermal Information....................................................5
6.7 Electrical Characteristics.............................................5
6.8 Typical Characteristics – ESD751...............................7
6.9 Typical Characteristics – ESD1LIN24......................... 8
6.10 Typical Characteristics - ESD761............................. 9
7 Detailed Description......................................................10
7.1 Overview................................................................... 10
7.2 Functional Block Diagram......................................... 10
7.3 Feature Description...................................................10
7.4 Device Functional Modes..........................................11
8 Application and Implementation.................................. 12
8.1 Application Information............................................. 12
8.2 Typical Application.................................................... 12
9 Power Supply Recommendations................................13
10 Layout...........................................................................13
10.1 Layout Guidelines................................................... 13
10.2 Layout Example...................................................... 14
11 Device and Documentation Support..........................15
11.1 Documentation Support.......................................... 15
11.2 Receiving Notification of Documentation Updates.. 15
11.3 Support Resources................................................. 15
11.4 Trademarks............................................................. 15
11.5 Electrostatic Discharge Caution.............................. 15
11.6 Glossary.................................................................. 15
12 Mechanical, Packaging, and Orderable
Information.................................................................... 15
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (November 2022) to Revision C (December 2022)
Page
• Changed the status of the ESD1LIN24-Q1 and ESD761-Q1 device from: Advanced Information to:
Production Data ................................................................................................................................................. 1
• Updated the Thermal Specifications and Clamping Voltages in the Thermal Information and Electrical
Characteristics table........................................................................................................................................... 4
Changes from Revision A (September 2022) to Revision B (November 2022)
Page
• Changed the status of the ESD751-Q1 device from: Advanced Information to: Production Data .....................1
2
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5 Pin Configuration and Functions
1
2
Figure 5-1. DPY Package, 2-Pin X1SON (Top View)
ID Area
1
2
Figure 5-2. DYF Package, 2-Pin SOD-323 (Top View)
Table 5-1. Pin Functions
PIN
NAME
NO.
TYPE(1)
DESCRIPTION
IO
1
I/O
ESD protected IO
GND
2
G
Connect to ground.
(1)
I = Input, O = Output, I/O = Input or Output, G = Ground, P = Power.
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
DEVICE
PPP
IEC 61000-4-5 Power (tp - 8/20 µs) at 25°C
IPP
IEC 61000-4-5 current (tp - 8/20 µs) at 25°C
MIN
MAX
ESD1LIN24-Q1
159
ESD751-Q1
102
ESD761-Q1
65
ESD1LIN24-Q1
4.3
ESD751-Q1
2.8
ESD761-Q1
1.8
TA
Operating free-air temperature
-55
150
TJ
Junction temperature
-55
150
Tstg
Storage temperature
-65
155
(1)
UNIT
W
A
°C
Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.
If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
6.2 ESD Ratings—AEC Specification
VALUE
Human body model (HBM), per AEC
V(ESD)
(1)
Electrostatic discharge
Q101-001(1)
Charged device model (CDM), per AEC
Q101-005
UNIT
± 2500
± 1000
V
AEC Q100-002 indicates that HBM stressing must be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.3 ESD Ratings—IEC Specification
DEVICE
IEC 61000-4-2 Contact Discharge, all pins
V(ESD)
Electrostatic discharge
IEC 61000-4-2 Air-gap Discharge, all pins
4
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VALUE
ESD1LIN24-Q1
±30000
ESD751-Q1
±22000
ESD761-Q1
±15000
ESD1LIN24-Q1
±30000
ESD751-Q1
±22000
ESD761-Q1
±15000
UNIT
V
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SLVSGS4C – SEPTEMBER 2022 – REVISED DECEMBER 2022
6.4 ESD Ratings - ISO Specification
DEVICE
ESD1LIN24-Q1
VALUE
± 30000
ISO 10605, 150-pF, 330-Ω, IO ESD751-Q1
± 22000
ESD761-Q1
± 15000
ESD1LIN24-Q1
± 30000
Contact discharge
ISO 10605, 330-pF, 330-Ω, IO ESD751-Q1
± 22000
ESD761-Q1
± 15000
ESD1LIN24-Q1
± 30000
V(ESD) Electrostatic discharge
ISO 10605, 150-pF, 330-Ω, IO ESD751-Q1
± 22000
ESD761-Q1
± 15000
ESD1LIN24-Q1
± 30000
Air-gap discharge
UNIT
ISO 10605, 330-pF, 330-Ω, IO ESD751-Q1
± 22000
ESD761-Q1
± 15000
V
6.5 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VIN
Input voltage
-24
24
V
TA
Operating free-air temperature
-55
150
°C
6.6 Thermal Information
THERMAL METRIC(1)
ESD1LIN24-Q1
ESD751-Q1
ESD761-Q1
DYF (SOD-323)
DYA (SOD-523)
DPY (X1SON)
2 PINS
2 PINS
2 PINS
705.4
746.3
282.3
°C/W
315
301.2
150.6
°C/W
561.5
509.6
98.3
°C/W
UNIT
RθJA
Junction-to-ambient thermal resistance
RθJC(top)
Junction-to-case (top) thermal resistance
RθJB
Junction-to-board thermal resistance
ΨJT
Junction-to-top characterization parameter
145
81.8
9.6
°C/W
ΨJB
Junction-to-board characterization parameter
550.2
503.0
97.7
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
N/A
N/A
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.7 Electrical Characteristics
over TA = 25°C (unless otherwise noted)
PARAMETER
VRWM
Reverse stand-off voltage
VBRF
Breakdown voltage(1)
VBRR
voltage(1)
VCLAMP
Breakdown
Clamping voltage(2)
TEST CONDITIONS
DEVICE
MIN
TYP
MAX
UNIT
–24
24
V
IIO = 10 mA, IO to GND
25.5
35.5
V
IIO = –10 mA, IO to GND
–35.5
–25.5
V
IPP = 4.3 A, tp = 8/20 µs, IO to GND and
GND to IO
ESD1LIN24-Q1
IPP = 2.8 A, tp = 8/20 µs, IO to GND and
GND to IO
ESD751-Q1
36.5
IPP = 1.8 A, tp = 8/20 µs, IO to GND and
GND to IO
ESD761-Q1
36.3
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V
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6.7 Electrical Characteristics (continued)
over TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
DEVICE
MIN
ESD1LIN24-Q1
VCLAMP
ILEAK
Clamping voltage(3)
Leakage current
IPP = 16 A, TLP, IO to GND and GND to IO
41.5
ESD761-Q1
42.5
VIO = ±24 V, IO to GND
CL
(1)
(2)
(3)
6
Dynamic resistance(3)
Line capacitance
VIO = 0 V, f = 1 MHz, Vpp = 30 mV, IO to
GND
MAX
40
ESD751-Q1
-50
ESD1LIN24-Q1
RDYN
TYP
1
UNIT
V
V
50
nA
0.5
ESD751-Q1
0.6
ESD761-Q1
0.53
Ω
ESD1LIN24-Q1
2.3
3.8
ESD751-Q1
1.6
2.7
ESD761-Q1
1.1
1.8
pF
VBRF and VBRR are defined as the voltage when ±10 mA is applied in the positive-going direction, before the device latches into the
snapback state.
Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.
Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008
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32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
Ipp (A)
Ipp (A)
6.8 Typical Characteristics – ESD751
5
10
15
20
25
Vclamp (V)
30
35
40
45
0
5
10
15
20
25
Vclamp (V)
30
35
Figure 6-1. Positive TLP Curve
Figure 6-2. Negative TLP Curve
Figure 6-3. +8-kV Clamped IEC Waveform
Figure 6-4. -8-kV Clamped IEC Waveform
40
45
130
150
12
2.17
2.165
2.16
2.155
2.15
2.145
2.14
2.135
2.13
2.125
2.12
2.115
2.11
2.105
2.1
11
10
9
8
ILEAK (nA)
Capacitance (pF)
0
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
7
6
5
4
3
2
1
0
2.5
5
7.5
10
12.5 15
V R (V)
17.5
20
Figure 6-5. Capacitance vs. Bias Voltage
22.5
25
0
-50
-30
-10
10
30
50
70
Temperature ( C)
90
110
Figure 6-6. Leakage Current vs. Temperature
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6.9 Typical Characteristics – ESD1LIN24
8
Figure 6-7. Positive TLP Curve
Figure 6-8. Negative TLP Curve
Figure 6-9. +8-kV Clamped IEC Waveform
Figure 6-10. −8-kV Clamped IEC Waveform
Figure 6-11. Capacitance vs. Bias Voltage
Figure 6-12. DC Voltage Sweep I-V Curve
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6.10 Typical Characteristics - ESD761
Figure 6-13. Positive TLP Curve
Figure 6-14. Negative TLP Curve
Figure 6-15. Capacitance vs. Bias Voltage
Figure 6-16. DC Voltage Sweep I-V Curve
Figure 6-17. Insertion Loss
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7 Detailed Description
7.1 Overview
The ESD1LIN24-Q1, ESD751-Q1, and ESD761-Q1 are single-channel ESD diodes available in industry
standard packages (SOD-323 and SOD-523) which are convenient for automatic optical inspection as well as
a smaller leadless package X1SON (DPY). These products offer ISO 10605 ESD ratings of (±30- kV Contact,
±30-kV Airgap), (±22-kV Contact, ±22- kV Airgap), and (±15-kV Contact, ±15-kV Airgap), respectively. The 2.3
pF, 1.6 pF, and 1.1 pF line capacitance of these ESD protection diodes are suitable for LIN applications that
support data rates from 20 Kbps to 10 Mbps.
Typical application of these products is the ESD circuit protection for LIN transceivers used in automotive
applications. These devices are commonly used for ESD protection inside automotive electronic control units
(ECUs) for head lights, door modules, climate control, roof control, wipers, cluster, audio, and many other
automotive applications.
7.2 Functional Block Diagram
1
2
7.3 Feature Description
The ESD1LIN24-Q1, ESD751-Q1, and ESD761-Q1 are single-channel bidirectional ESD diodes with a high
ESD protection level. These devices have a small dynamic resistance, which makes the clamping voltage low
when the device is actively protecting other circuits. The breakdown is bidirectional so these protection devices
can prevent system damage if battery leads are swapped. Low leakage allows the diodes to conserve power
when working below the VRWM. The temperature range of −55°C to +150°C makes these ESD devices work at
extensive temperatures in most environments.
7.3.1 IEC 61000-4-5 Surge Protection
The I/O pins of the ESD1LIN24-Q1, ESD751-Q1, ESD761-Q1 have the following surge ratings (8/20 µs
waveform): 4.3A, 2.8 A, and 1.8 A, respectively. An ESD-surge clamp diverts this current to ground.
7.3.2 IO Capacitance
The capacitance between the I/O pins of the ESD1LIN24-Q1, ESD751-Q1, and ESD761-Q1 devices are as
follows: 2.3 pF, 1.6 pF, and 1.1 pF, respectively. The capacitance of these devices support data rates for LIN up
to 10 Mbps.
10
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7.3.3 Dynamic Resistance
The I/O pins feature an ESD clamp that have a low RDYN of 0.48 Ω for the ESD1LIN24-Q1, 0.6 Ω for the
ESD751-Q1, and 0.58 Ω for the ESD761-Q1.
7.3.4 DC Breakdown Voltage
The DC breakdown voltage between the I/O pins is a minimum of ± 25.5 V. This shields sensitive equipment
from surges above the reverse standoff voltage of ± 24 V.
7.3.5 Ultra Low Leakage Current
The I/O pins feature an ultra-low leakage current of 50 nA (maximum) with a bias of ± 24 V.
7.3.6 Clamping Voltage
The I/O pins of the ESD1LIN24-Q1 feature an ESD clamp that is capable of clamping the voltage to 37 V ( IPP
= 4.3 A) and 37.7 V (IPP = 16 A for TLP). The I/O pins of the ESD751-Q1 feature an ESD clamp that is capable
of clamping the voltage to 36.5 V (IPP = 2.8 A) and 39.7 V (IPP = 16 A for TLP). The I/O pins of the ESD761-Q1
feature an ESD clamp that is capable of clamping the voltage to 36.3 V (IPP = 1.8 A) and 39.3 V (IPP = 16 A for
TLP).
7.3.7 Industry Standard Packages
The ESD1LIN24-Q1 and ESD751-Q1 feature industry standard SOD-323 (DYF) and SOD-523 (DYA) leaded
packages for automatic optical inspection (AOI). The ESD761-Q1 is offered in the leadless X1SON (DPY)
package
7.4 Device Functional Modes
The ESD1LIN24-Q1, ESD751-Q1, and ESD761-Q1 are single channel passive clamps that have low leakage
during normal operation when the voltage between I/O and GND is below VRWM, and activate when the voltage
between I/O and GND goes above VBR. During ISO 10605 ESD events, transient voltages from ±30 kV to ±15
kV can be clamped on either channel. When the voltages on the protected lines fall below the VHOLD, the device
reverts back to the low leakage passive state
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8 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
8.1 Application Information
The ESD1LIN24-Q1, ESD751-Q1, and ESD761-Q1 are single channel TVS diodes which are used to provide
a path to ground for dissipating ESD events on LIN signal lines. The LIN signal lines are typically routed
throughout the automobile to connect between the different ECUs. As the current from ESD passes through the
TVS, only a small voltage drop is present across the diode. This is the voltage presented to the protected IC.
The low RDYN of the triggered TVS holds this voltage, VCLAMP, to a safe level for the protected IC.
8.2 Typical Application
A
(for exa
Figure 8-1. Typical Application
8.2.1 Design Requirements
For this design example, the ESD1LIN24-Q1 is used to provide ESD protection to a LIN transceiver. The
parameters listed in Table 8-1 are the known design parameters for this application.
Table 8-1. Design Parameters for Typical Applications
12
Design Parameter
Value
Diode configuration
Bidirectional
VIO signal range
Up to 18 V
VRWM
±24 V
Jumpstart short to battery event on VIO
±24 V
Data rate
Up to 10 Mbps
Pullup resistor
1 kΩ
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8.2.2 Detailed Design Procedure
The ESD1LIN24-Q1, ESD751-Q1, and ESD761-Q1 have a VRWM of ±24 V to protect the diode from being
damaged during a short to battery event that can occur by reversing the terminal connections during jumpstart.
The bidirectional characteristic ensures both positive and negative polarity are protected. The low capacitance of
5 pF or less permits data rates up to 10 Mbps, which allows the designer to meet the requirements for LIN. The 1
kΩ and VSUP diode allows the LIN signal to be pulled up to a diode drop below the battery voltage.
8.2.3 Application Curves
Figure 8-2. +8-kV Clamped IEC Waveform
Figure 8-3. −8-kV Clamped IEC Waveform
9 Power Supply Recommendations
This device is a passive TVS diode-based ESD protection device, therefore there is no requirement to power it.
Ensure that the maximum voltage specifications for each pin is not violated.
10 Layout
10.1 Layout Guidelines
•
•
•
•
The optimum placement is as close to the connector as possible.
– EMI during an ESD event can couple from the trace being struck to other nearby unprotected traces,
resulting in early system failures.
– The PCB designer must minimize the possibility of EMI coupling by keeping any unprotected traces away
from the protected traces which are between the TVS and the connector.
Route the protected traces as straight as possible.
Eliminate any sharp corners on the protected traces between the TVS and the connector by using rounded
corners with the largest radii possible.
– Electric fields tend to build up on corners, increasing EMI coupling.
If pin 1 or 2 is connected to ground, use a thick and short trace for this return path.
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10.2 Layout Example
To power supply
VBUS
ESD1LIN24-Q1
CC1
CC2
ESD1LIN24-Q1
ESD751-Q1
SBU1
SBU2
ESD751-Q1
ESD761-Q1
D+
DESD761-Q1
Legend
GND
Pin to GND
Figure 10-1. Layout Recommendation
14
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11 Device and Documentation Support
TI offers an extensive line of development tools. Tools and software to evaluate the performance of the device,
generate code, and develop solutions are listed below.
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation, see the following:
• Texas Instruments, ESD Layout Guide application reports
• Texas Instruments, Generic ESD Evaluation Module user's guide
• Texas Instruments, Picking ESD Diodes for Ultra High-Speed Data Lines application reports
• Texas Instruments, Reading and Understanding an ESD Protection data sheet
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
11.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
11.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
11.6 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Copyright © 2023 Texas Instruments Incorporated
Product Folder Links: ESD1LIN24-Q1 ESD751-Q1 ESD761-Q1
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15
PACKAGE OPTION ADDENDUM
www.ti.com
16-Feb-2023
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
ESD1LIN24DYFRQ1
ACTIVE
SOT
DYF
2
3000
RoHS & Green
SN
Level-3-260C-168 HR
-55 to 150
2QKF
Samples
ESD751DYARQ1
ACTIVE
SOT-5X3
DYA
2
8000
RoHS & Green
SN
Level-3-260C-168 HR
-55 to 150
1MO
Samples
ESD761DPYRQ1
ACTIVE
X1SON
DPY
2
10000
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-55 to 150
NF
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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