INA
®
INA114
114
INA
114
Precision
INSTRUMENTATION AMPLIFIER
FEATURES
DESCRIPTION
● LOW OFFSET VOLTAGE: 50µV max
The INA114 is a low cost, general purpose instrumentation amplifier offering excellent accuracy. Its versatile 3-op amp design and small size make it ideal for a
wide range of applications.
● LOW DRIFT: 0.25µV/°C max
● LOW INPUT BIAS CURRENT: 2nA max
● HIGH COMMON-MODE REJECTION:
115dB min
● INPUT OVER-VOLTAGE PROTECTION:
±40V
● WIDE SUPPLY RANGE: ±2.25 to ±18V
A single external resistor sets any gain from 1 to 10,000.
Internal input protection can withstand up to ±40V
without damage.
The INA114 is laser trimmed for very low offset voltage
(50µV), drift (0.25µV/°C) and high common-mode
rejection (115dB at G = 1000). It operates with power
supplies as low as ±2.25V, allowing use in battery
operated and single 5V supply systems. Quiescent current is 3mA maximum.
● LOW QUIESCENT CURRENT: 3mA max
● 8-PIN PLASTIC AND SOL-16
APPLICATIONS
The INA114 is available in 8-pin plastic and SOL-16
surface-mount packages. Both are specified for the
–40°C to +85°C temperature range.
● BRIDGE AMPLIFIER
● THERMOCOUPLE AMPLIFIER
● RTD SENSOR AMPLIFIER
● MEDICAL INSTRUMENTATION
● DATA ACQUISITION
V+
7 (13)
–
VIN
2
(4)
Over-Voltage
Protection
INA114
Feedback
A1
25kΩ
1
A3
RG
8
VIN
(5)
DIP Connected
Internally
6
(11)
VO
G=1+
25kΩ
(15)
3
(12)
25kΩ
(2)
+
25kΩ
Over-Voltage
Protection
5
A2
25kΩ
25kΩ
(10)
50kΩ
RG
Ref
4 (7)
DIP
(SOIC)
V–
International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111
Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132
®
©1992 Burr-Brown Corporation
SBOS014
PDS-1142D
1
INA114
Printed in U.S.A. March, 1998
SPECIFICATIONS
ELECTRICAL
At TA = +25°C, VS = ±15V, RL = 2kΩ, unless otherwise noted.
INA114BP, BU
PARAMETER
CONDITIONS
INPUT
Offset Voltage, RTI
Initial
vs Temperature
vs Power Supply
Long-Term Stability
Impedance, Differential
Common-Mode
Input Common-Mode Range
Safe Input Voltage
Common-Mode Rejection
TYP
MAX
±50 + 100/G
±0.25 + 5/G
3 + 10/G
±11
±10 + 20/G
±0.1 + 0.5/G
0.5 + 2/G
±0.2 + 0.5/G
1010 || 6
1010 || 6
±13.5
TA = +25°C
TA = TMIN to TMAX
VS = ±2.25V to ±18V
VCM = ±10V, ∆RS = 1kΩ
G=1
G = 10
G = 100
G = 1000
BIAS CURRENT
vs Temperature
96
115
120
120
±0.5
±8
OFFSET CURRENT
vs Temperature
±0.5
±8
NOISE VOLTAGE, RTI
f = 10Hz
f = 100Hz
f = 1kHz
fB = 0.1Hz to 10Hz
Noise Current
f=10Hz
f=1kHz
fB = 0.1Hz to 10Hz
80
96
110
115
±40
G=1
G = 10
G = 100
G = 1000
G=1
Gain vs Temperature
50kΩ Resistance(1)
Nonlinearity
G=1
G = 10
G = 100
G = 1000
IO = 5mA, TMIN to TMAX
VS = ±11.4V, RL = 2kΩ
VS = ±2.25V, RL = 2kΩ
±13.5
±10
±1
Load Capacitance Stability
Short Circuit Current
FREQUENCY RESPONSE
Bandwidth, –3dB
Overload Recovery
G=1
G = 10
G = 100
G = 1000
VO = ±10V, G = 10
G=1
G = 10
G = 100
G = 1000
50% Overdrive
POWER SUPPLY
Voltage Range
Current
VIN = 0V
0.01%
✻
75
90
106
106
±2
±2
0.3
±2.25
TEMPERATURE RANGE
Specification
Operating
θJA
TYP
MAX
±25 + 30/G ±125 + 500/G
±0.25 + 5/G
±1 + 10/G
✻
✻
✻
✻
✻
✻
✻
90
106
110
110
✻
✻
✻
✻
±5
±5
UNITS
µV
µV/°C
µV/V
µV/mo
Ω || pF
Ω || pF
V
V
dB
dB
dB
dB
nA
pA/°C
nA
pA/°C
15
11
11
0.4
✻
✻
✻
✻
nV/√Hz
nV/√Hz
nV/√Hz
µVp-p
0.4
0.2
18
✻
✻
✻
pA/√Hz
pA/√Hz
pAp-p
✻
1 + (50kΩ/RG)
1
OUTPUT
Voltage
MIN
G = 1000, RS = 0Ω
GAIN
Gain Equation
Range of Gain
Gain Error
Slew Rate
Settling Time,
INA114AP, AU
MIN
±0.01
±0.02
±0.05
±0.5
±2
±25
±0.0001
±0.0005
±0.0005
±0.002
10000
±0.05
±0.4
±0.5
±1
±10
±100
±0.001
±0.002
±0.002
±0.01
±13.7
±10.5
±1.5
1000
+20/–15
–40
–40
80
✻
✻
✻
✻
✻
✻
✻
✻
✻
✻
✻
✻
✻
1
100
10
1
0.6
18
20
120
1100
20
±15
±2.2
✻
✻
±18
±3
✻
85
125
✻
✻
✻
✻
±0.5
±0.7
±2
±10
✻
±0.002
±0.004
±0.004
±0.02
V/V
V/V
%
%
%
%
ppm/°C
ppm/°C
% of FSR
% of FSR
% of FSR
% of FSR
✻
✻
✻
✻
✻
V
V
V
pF
mA
✻
✻
✻
✻
✻
✻
✻
✻
✻
✻
MHz
kHz
kHz
kHz
V/µs
µs
µs
µs
µs
µs
✻
✻
✻
✻
✻
V
mA
✻
✻
°C
°C
°C/W
✻ Specification same as INA114BP/BU.
NOTE: (1) Temperature coefficient of the “50kΩ” term in the gain equation.
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
®
INA114
2
ELECTROSTATIC
DISCHARGE SENSITIVITY
PIN CONFIGURATIONS
P Package
8-Pin DIP
Top View
RG
1
8
RG
V–IN
2
7
V+
+
IN
3
6
VO
V–
4
5
Ref
V
U Package
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and
installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
SOL-16 Surface-Mount
Top View
NC
1
16 NC
RG
2
15 RG
NC
3
14 NC
V–IN
4
13 V+
V+IN
5
12 Feedback
NC
6
11 VO
V–
7
10 Ref
NC
8
9
PACKAGE/ORDERING INFORMATION
PRODUCT
PACKAGE
PACKAGE
DRAWING
NUMBER(1)
INA114AP
INA114BP
INA114AU
INA114BU
8-Pin Plastic DIP
8-Pin Plastic DIP
SOL-16 Surface-Mount
SOL-16 Surface-Mount
006
006
211
211
TEMPERATURE
RANGE
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
NC
ABSOLUTE MAXIMUM RATINGS(1)
Supply Voltage .................................................................................. ±18V
Input Voltage Range .......................................................................... ±40V
Output Short-Circuit (to ground) .............................................. Continuous
Operating Temperature ................................................. –40°C to +125°C
Storage Temperature ..................................................... –40°C to +125°C
Junction Temperature .................................................................... +150°C
Lead Temperature (soldering, 10s) ............................................... +300°C
NOTE: (1) Stresses above these ratings may cause permanent damage.
®
3
INA114
TYPICAL PERFORMANCE CURVES
At TA = +25°C, VS = ±15V, unless otherwise noted.
COMMON-MODE REJECTION vs FREQUENCY
GAIN vs FREQUENCY
140
Common-Mode Rejection (dB)
G = 100, 1k
Gain (V/V)
1k
100
10
1
120
G = 10
100
G = 1k
80
G = 100
60
G = 10
40
G=1
20
0
10
100
10k
100k
0
–
VO
+
–
+
VCM
(Any Gain)
A3 – Output
Swing Limit
Lim
it
– O ed by
utpu
A
t Sw 2
ing
–10
A3 + Output
Swing Limit
by A 1 g
in
ited
Lim put Sw
t
u
O
–
–5
0
5
10
120
100
G = 1000
80
G = 100
G = 10
60
G=1
40
20
0
15
10
100
1k
100k
10k
Output Voltage (V)
Frequency (Hz)
NEGATIVE POWER SUPPLY REJECTION
vs FREQUENCY
INPUT-REFERRED NOISE VOLTAGE
vs FREQUENCY
G = 100
Input-Referred Noise Voltage (nV/√ Hz)
120
G = 1000
100
G = 10
G=1
80
1M
140
Limit
+ Ou ed by A
tput
Swin2
g
140
Power Supply Rejection (dB)
100k
POSITIVE POWER SUPPLY REJECTION
vs FREQUENCY
VD/2
–15
–15
10k
INPUT COMMON-MODE VOLTAGE RANGE
vs OUTPUT VOLTAGE
VD/2
–10
1k
Frequency (Hz)
5
–5
100
Frequency (Hz)
y A1
ed b
Limit ut Swing
p
t
u
+O
10
10
1M
Power Supply Rejection (dB)
Common-Mode Voltage (V)
15
1k
60
40
20
0
1M
1k
100
G=1
G = 10
10
G = 100, 1000
G = 1000
BW Limit
1
10
100
1k
10k
100k
1M
1
Frequency (Hz)
100
Frequency (Hz)
®
INA114
10
4
1k
10k
TYPICAL PERFORMANCE CURVES
(CONT)
At TA = +25°C, VS = ±15V, unless otherwise noted.
SETTLING TIME vs GAIN
OFFSET VOLTAGE WARM-UP vs TIME
1000
4
Offset Voltage Change (µV)
6
Settling Time (µs)
1200
800
600
0.01%
400
0.1%
200
0
0
–2
–4
–6
1
10
100
1000
0
30
45
60
75
90
Time from Power Supply Turn-on (s)
INPUT BIAS AND INPUT OFFSET CURRENT
vs TEMPERATURE
INPUT BIAS CURRENT
vs DIFFERENTIAL INPUT VOLTAGE
2
105
120
3
2
1
±IB
0
IOS
–1
1
0
–1
G=1
G = 10
–2
G = 100
–2
–40
–15
10
35
60
–3
–45
85
Temperature (°C)
0
15
30
45
MAXIMUM OUTPUT SWING vs FREQUENCY
Both Inputs
2
Peak-to-Peak Amplitude (V)
|Ib1| + |Ib2|
One Input
1
Over-Voltage
Protection
Over-Voltage
Protection
Normal
Operation
–1
–2
–15
32
3
0
–30
G = 1000
Differential Overload Voltage (V)
INPUT BIAS CURRENT
vs COMMON-MODE INPUT VOLTAGE
Input Bias Current (mA)
15
Gain (V/V)
Input Bias Current (mA)
Input Bias and Input Offset Current (nA)
G ≥ 100
2
One Input
–3
–45
28
G = 1, 10
24
G = 100
20
16
G = 1000
12
8
4
Both Inputs
–30
–15
0
0
15
30
10
45
100
1k
10k
100k
1M
Frequency (Hz)
Common-Mode Voltage (V)
®
5
INA114
TYPICAL PERFORMANCE CURVES
(CONT)
At TA = +25°C, VS = ±15V, unless otherwise noted.
SLEW RATE vs TEMPERATURE
OUTPUT CURRENT LIMIT vs TEMPERATURE
30
Slew Rate (V/µs)
0.8
0.6
0.4
0.2
0
–75
–50
–25
0
25
50
75
100
15
–|ICL|
–15
60
85
QUIESCENT CURRENT vs TEMPERATURE
QUIESCENT CURRENT AND POWER DISSIPATION
vs POWER SUPPLY VOLTAGE
2.4
2.2
2.0
2.6
120
2.5
100
80
2.4
Power Dissipation
60
2.3
Quiescent Current
2.2
40
2.1
20
2.0
–50
–25
0
25
50
75
100
0
125
±3
±6
±9
±12
±15
0
±18
Power Supply Voltage (V)
Temperature (°C)
POSITIVE SIGNAL SWING vs TEMPERATUE (RL = 2kΩ)
NEGATIVE SIGNAL SWING vs TEMPERATUE (RL = 2kΩ)
16
–16
VS = ±15V
12
VS = ±15V
–14
Output Voltage (V)
14
Output Voltage (V)
35
Temperature (°C)
2.6
VS = ±11.4V
10
8
6
4
–12
VS = ±11.4V
–10
–8
–6
–4
VS = ±2.25V
2
0
–75
10
Temperature (°C)
Quiescent Current (mA)
Quiescent Current (mA)
+|ICL|
20
10
–40
125
2.8
1.8
–75
25
–50
–25
0
25
50
75
100
0
–75
125
Temperature (°C)
–50
–25
0
25
50
Temperature (°C)
®
INA114
VS = ±2.25V
–2
6
75
100
125
Power Dissipation (mW)
Short Circuit Current (mA)
1.0
TYPICAL PERFORMANCE CURVES
(CONT)
At TA = +25°C, VS = ±15V, unless otherwise noted.
LARGE SIGNAL RESPONSE, G = 1
SMALL SIGNAL RESPONSE, G = 1
+10V
+100mV
0
0
–10V
–200mV
LARGE SIGNAL RESPONSE, G = 1000
SMALL SIGNAL RESPONSE, G = 1000
+10V
+200mV
0
0
–10V
–200mV
INPUT-REFERRED NOISE, 0.1 to 10Hz
0.1µV/div
1 s/div
®
7
INA114
APPLICATION INFORMATION
Figure 1 shows the basic connections required for operation
of the INA114. Applications with noisy or high impedance
power supplies may require decoupling capacitors close to
the device pins as shown.
ues. The accuracy and temperature coefficient of these
resistors are included in the gain accuracy and drift specifications of the INA114.
The stability and temperature drift of the external gain
setting resistor, RG, also affects gain. RG’s contribution to
gain accuracy and drift can be directly inferred from the gain
equation (1). Low resistor values required for high gain can
make wiring resistance important. Sockets add to the wiring
resistance which will contribute additional gain error (possibly an unstable gain error) in gains of approximately 100 or
greater.
The output is referred to the output reference (Ref) terminal
which is normally grounded. This must be a low-impedance
connection to assure good common-mode rejection. A resistance of 5Ω in series with the Ref pin will cause a typical
device to degrade to approximately 80dB CMR (G = 1).
SETTING THE GAIN
Gain of the INA114 is set by connecting a single external
resistor, RG:
G = 1 + 50 kΩ
RG
NOISE PERFORMANCE
The INA114 provides very low noise in most applications.
For differential source impedances less than 1kΩ, the INA103
may provide lower noise. For source impedances greater
than 50kΩ, the INA111 FET-input instrumentation amplifier may provide lower noise.
(1)
Commonly used gains and resistor values are shown in
Figure 1.
Low frequency noise of the INA114 is approximately
0.4µVp-p measured from 0.1 to 10Hz. This is approximately
one-tenth the noise of “low noise” chopper-stabilized amplifiers.
The 50kΩ term in equation (1) comes from the sum of the
two internal feedback resistors. These are on-chip metal film
resistors which are laser trimmed to accurate absolute val-
V+
0.1µF
Pin numbers are
for DIP packages.
–
VIN
2
Over-Voltage
Protection
7
INA114
A1
25kΩ
1
+
–
)
VO = G • (VIN – VIN
25kΩ
25kΩ
G=1+
6
A3
RG
50kΩ
RG
+
8
25kΩ
Load
VO
–
+
VIN
3
Over-Voltage
Protection
5
A2
25kΩ
4
DESIRED
GAIN
1
2
5
10
20
50
100
200
500
1000
2000
5000
10000
RG
(Ω)
NEAREST 1% RG
(Ω)
No Connection
50.00k
12.50k
5.556k
2.632k
1.02k
505.1
251.3
100.2
50.05
25.01
10.00
5.001
No Connection
49.9k
12.4k
5.62k
2.61k
1.02k
511
249
100
49.9
24.9
10
4.99
0.1µF
Also drawn in simplified form:
V–
V–
IN
RG
V+
IN
FIGURE 1. Basic Connections.
®
INA114
25kΩ
8
INA114
Ref
VO
OFFSET TRIMMING
The INA114 is laser trimmed for very low offset voltage and
drift. Most applications require no external offset adjustment. Figure 2 shows an optional circuit for trimming the
output offset voltage. The voltage applied to Ref terminal is
summed at the output. Low impedance must be maintained
at this node to assure good common-mode rejection. This is
achieved by buffering trim voltage with an op amp as
shown.
VO
RG
VIN
INA114
47kΩ
47kΩ
Thermocouple
–
VIN
+
Microphone,
Hydrophone
etc.
INA114
100µA
1/2 REF200
Ref
OPA177
±10mV
Adjustment Range
INA114
V+
10kΩ
100Ω
10kΩ
INA114
100Ω
Center-tap provides
bias current return.
100µA
1/2 REF200
FIGURE 3. Providing an Input Common-Mode Current Path.
V–
FIGURE 2. Optional Trimming of Output Offset Voltage.
A combination of common-mode and differential input
signals can cause the output of A1 or A2 to saturate. Figure
4 shows the output voltage swing of A1 and A2 expressed in
terms of a common-mode and differential input voltages.
Output swing capability of these internal amplifiers is the
same as the output amplifier, A3. For applications where
input common-mode range must be maximized, limit the
output voltage swing by connecting the INA114 in a lower
gain (see performance curve “Input Common-Mode Voltage
Range vs Output Voltage”). If necessary, add gain after the
INA114 to increase the voltage swing.
INPUT BIAS CURRENT RETURN PATH
The input impedance of the INA114 is extremely high—
approximately 1010Ω. However, a path must be provided for
the input bias current of both inputs. This input bias current
is typically less than ±1nA (it can be either polarity due to
cancellation circuitry). High input impedance means that
this input bias current changes very little with varying input
voltage.
Input circuitry must provide a path for this input bias current
if the INA114 is to operate properly. Figure 3 shows various
provisions for an input bias current path. Without a bias
current return path, the inputs will float to a potential which
exceeds the common-mode range of the INA114 and the
input amplifiers will saturate. If the differential source resistance is low, bias current return path can be connected to one
input (see thermocouple example in Figure 3). With higher
source impedance, using two resistors provides a balanced
input with possible advantages of lower input offset voltage
due to bias current and better common-mode rejection.
Input-overload often produces an output voltage that appears
normal. For example, an input voltage of +20V on one input
and +40V on the other input will obviously exceed the linear
common-mode range of both input amplifiers. Since both
input amplifiers are saturated to nearly the same output
voltage limit, the difference voltage measured by the output
amplifier will be near zero. The output of the INA114 will
be near 0V even though both inputs are overloaded.
INPUT PROTECTION
The inputs of the INA114 are individually protected for
voltages up to ±40V. For example, a condition of –40V on
one input and +40V on the other input will not cause
damage. Internal circuitry on each input provides low series
impedance under normal signal conditions. To provide
equivalent protection, series input resistors would contribute
excessive noise. If the input is overloaded, the protection
circuitry limits the input current to a safe value (approximately 1.5mA). The typical performance curve “Input Bias
Current vs Common-Mode Input Voltage” shows this input
INPUT COMMON-MODE RANGE
The linear common-mode range of the input op amps of the
INA114 is approximately ±13.75V (or 1.25V from the
power supplies). As the output voltage increases, however,
the linear input range will be limited by the output voltage
swing of the input amplifiers, A1 and A2. The commonmode range is related to the output voltage of the complete
amplifier—see performance curve “Input Common-Mode
Range vs Output Voltage.”
®
9
INA114
current limit behavior. The inputs are protected even if no
power supply voltage is present.
The output sense connection can be used to sense the output
voltage directly at the load for best accuracy. Figure 5 shows
how to drive a load through series interconnection resistance. Remotely located feedback paths may cause instability. This can be generally be eliminated with a high
frequency feedback path through C1. Heavy loads or long
lines can be driven by connecting a buffer inside the feedback path (Figure 6).
OUTPUT VOLTAGE SENSE (SOL-16 package only)
The surface-mount version of the INA114 has a separate
output sense feedback connection (pin 12). Pin 12 must be
connected to the output terminal (pin 11) for proper operation. (This connection is made internally on the DIP version
of the INA114.)
VCM –
V+
G • VD
2
INA114
Over-Voltage
Protection
A1
25kΩ
VD
2
25kΩ
G=1+
25kΩ
A3
RG
50kΩ
RG
VO = G • VD
25kΩ
VD
2
A2
Over-Voltage
Protection
VCM
25kΩ
VCM +
25kΩ
G • VD
2
V–
FIGURE 4. Voltage Swing of A1 and A2.
Surface-mount package
version only.
Output
Sense
–
VIN
RG
Surface-mount package
version only.
–
VIN
C1
1000pF
INA114
RG
Ref
+
VIN
Output
Sense
Load
OPA633
IL: ±100mA
INA114
180Ω
Ref
+
VIN
RL
Equal resistance here preserves
good common-mode rejection.
FIGURE 5. Remote Load and Ground Sensing.
FIGURE 6. Buffered Output for Heavy Loads.
–
VIN
22.1kΩ
22.1kΩ
+
VIN
511Ω
INA114
Ref
Shield is driven at the
common-mode potential.
100Ω
OPA602
FIGURE 7. Shield Driver Circuit.
®
INA114
10
For G = 100
RG = 511Ω // 2(22.1kΩ)
effective RG = 505Ω
VO
V+
Equal line resistance here creates
a small common-mode voltage
which is rejected by INA114.
1
V+
REF200
100µA
RTD
RG
VO
INA114
2
Ref
RZ
3
VO = 0V at RRTD = RZ
Resistance in this line causes
a small common-mode voltage
which is rejected by INA114.
FIGURE 8. RTD Temperature Measurement Circuit.
V+
2
10.0V
6
REF102
R1
27k Ω
1N4148
(1)
Cu
R2
5.23k Ω
R4
80.6k Ω
4
(2)
R7
1MΩ
INA114
K
Cu
VO
Ref
R5
50Ω
R3
100Ω
R6
100Ω
Zero Adj
ISA
TYPE
MATERIAL
SEEBECK
COEFFICIENT
(µV/°C)
R2
(R3 = 100Ω)
R4
(R5 + R6 = 100Ω)
E
Chromel
Constantan
58.5
3.48kΩ
56.2kΩ
J
Iron
Constantan
50.2
4.12kΩ
64.9kΩ
K
Chromel
Alumel
39.4
5.23kΩ
80.6kΩ
T
Copper
Constantan
38.0
5.49kΩ
84.5kΩ
NOTES: (1) –2.1mV/°C at 200µA. (2) R7 provides down-scale burn-out indication.
FIGURE 9. Thermocouple Amplifier With Cold Junction Compensation.
®
11
INA114
2.8kΩ
LA
RA
RG/2
INA114
VO
Ref
2.8kΩ
G = 10
390kΩ
1/2
OPA2604
1/2
OPA2604
RL
10kΩ
390kΩ
FIGURE 10. ECG Amplifier With Right-Leg Drive.
–
+10V
VIN
+
RG
Ref
G = 500
Bridge
RG
100Ω
VO
INA114
C1
0.1µF
R1
1MΩ
VO
INA114
Ref
OPA602
f–3dB =
1
2πR1C1
= 1.59Hz
FIGURE 11. Bridge Transducer Amplifier.
–
VIN
R1
RG
FIGURE 12. AC-Coupled Instrumentation Amplifier.
IO =
VIN
•G
R
INA114
+
Ref
IB
A1
IO
Load
A1
IB Error
OPA177
OPA602
OPA128
±1.5nA
1pA
75fA
FIGURE 13. Differential Voltage-to-Current Converter.
®
INA114
12
PACKAGE OPTION ADDENDUM
www.ti.com
7-Oct-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
INA114AP
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
INA114AP
INA114APG4
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
INA114AP
INA114AU
ACTIVE
SOIC
DW
16
40
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 85
INA114AU
INA114AU/1K
ACTIVE
SOIC
DW
16
1000
RoHS & Green
Call TI
Level-3-260C-168 HR
-40 to 85
INA114AU
INA114AU/1KE4
ACTIVE
SOIC
DW
16
1000
RoHS & Green
Call TI
Level-3-260C-168 HR
-40 to 85
INA114AU
INA114AUE4
ACTIVE
SOIC
DW
16
40
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 85
INA114AU
INA114BP
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
INA114BP
INA114BPG4
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
INA114BP
INA114BU
ACTIVE
SOIC
DW
16
40
RoHS & Green
NIPDAU
Level-3-260C-168 HR
INA114BU
INA114BU/1K
ACTIVE
SOIC
DW
16
1000
RoHS & Green
Call TI
Level-3-260C-168 HR
INA114BU
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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