INA125-DIE
www.ti.com
SBOS647 – SEPTEMBER 2012
INSTRUMENTATION AMPLIFIER WITH PRECISION VOLTAGE REFERENCE
FEATURES
1
•
•
•
•
•
•
•
•
•
•
APPLICATIONS
Low Quiescent Current
Sleep Mode
Precision Voltage Reference
Low Offset Voltage
Low Offset Drift
Low Input Bias Current
High CMR
Low Noise
Input Protection
Wide Supply Range
•
•
•
•
•
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Pressure and Temperature Bridge Amplifiers
Industrial Process Control
Factory Automation
Multi-Channel Data Acquisition
Battery Operated Systems
General Purpose Instrumentation
DESCRIPTION
The INA125 is a low power, high accuracy instrumentation amplifier with a precision voltage reference. It
provides complete bridge excitation and precision differential-input amplification on a single integrated circuit.
The voltage reference is externally adjustable with pin-selectable voltages, allowing use with a variety of
transducers. Sleep mode allows shutdown and duty cycle operation to save power.
ORDERING INFORMATION (1)
(1)
(2)
PRODUCT
PACKAGE
DESIGNATOR
PACKAGE
INA125
TD
Bare die in waffle pack (2)
ORDERABLE PART NUMBER
PACKAGE QUANTITY
INA125TDA1
112
INA125TDA2
10
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
Processing is per the Texas Instruments commercial production baseline and is in compliance with the Texas Instruments Quality
Control System in effect at the time of manufacture. Electrical screening consists of DC parametric and functional testing at room
temperature only. Unless otherwise specified by Texas Instruments AC performance and performance over temperature is not
warranted. Visual Inspection is performed in accordance with MIL-STD-883 Test Method 2010 Condition B at 75X minimum.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2012, Texas Instruments Incorporated
INA125-DIE
SBOS647 – SEPTEMBER 2012
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
BARE DIE INFORMATION
DIE THICKNESS
BACKSIDE FINISH
BACKSIDE
POTENTIAL
BOND PAD
METALLIZATION COMPOSITION
BOND PAD
THICKNESS
10.5 mils.
Silicon with backgrind
Floating
AlCu (0.5%)
1100 nm
Table 1. Bond Pad Coordinates in Microns
2
DESCRIPTION
PAD NUMBER
X MIN
Y MIN
X MAX
Y MAX
V+
1
-2019.3
-335.2
-1917.7
-233.68
SLEEP
2
-2019.3
-538.48
-1917.7
-436.88
V-
3
-1816.1
-838.2
-1714.5
-736.6
VREFOUT
4
-365.76
-820.42
-264.16
-718.82
IAREF
5
-60.96
-820.42
106.68
-718.82
VIN+
6
673.1
-820.42
774.7
-718.82
VIN-
7
1889.76
-652.78
1991.36
-551.18
RG
8
1897.38
-429.26
1998.98
-327.66
RG
9
1823.72
307.34
1925.32
408.94
VO
10
1892.3
515.62
1993.32
617.22
Sense
11
764.54
718.82
932.18
820.42
VREFCOM
12
393.7
718.82
561.34
820.42
N/C
13
-878.84
718.82
-777.24
820.42
VREFBG
14
-1094.74
713.74
-993.14
815.34
VREF2.5
15
-1544.32
718.82
-1442.72
820.42
VREF5
16
-2001.52
467.36
-1899.92
568.96
VREF10
17
-2001.52
243.84
-1899.92
345.44
Submit Documentation Feedback
Copyright © 2012, Texas Instruments Incorporated
PACKAGE OPTION ADDENDUM
www.ti.com
4-Feb-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
(3)
Device Marking
(4/5)
(6)
INA125TDA1
ACTIVE
0
112
RoHS & Green
Call TI
N / A for Pkg Type
INA125TDA2
ACTIVE
0
10
RoHS & Green
Call TI
N / A for Pkg Type
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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