INA128, INA129
SBOS051F – OCTOBER 1995 – REVISED MAY 2022
INA12x Precision, Low-Power Instrumentation Amplifiers
1 Features
3 Description
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The INA128 and INA129 (INA12x) are low-power,
general-purpose instrumentation amplifiers that offer
excellent accuracy. The versatile three op amp design
and small size make these amplifiers an excellent
choice for a wide range of applications. Currentfeedback input circuitry provides wide bandwidth even
at high gain (200 kHz at G = 100).
Low offset voltage: 50 μV, maximum
Low drift: 0.5 μV/°C, maximum
Low input bias current: 5 nA, maximum
Low noise: 8 nV/√Hz, 0.2 μVpp
High CMR: 120 dB, minimum
Bandwidth: 1.3 MHz (G = 1)
Inputs protected to ±40 V
Wide supply range: ±2.25 V to ±18 V
Low quiescent current: 700 μA
Packages: 8-pin plastic DIP, SO-8
A single external resistor sets any gain from 1 to
10,000. The INA128 provides an industry-standard
gain equation with a 50-kΩ resistor. The INA129 gain
equation uses a 49.4-kΩ resistor to allow for drop-in
replacements of comparable devices.
2 Applications
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Pressure transmitter
Temperature transmitter
Weigh scale
Electrocardiogram (ECG)
Analog input module
Data acquisition (DAQ)
The INA12x are available in plastic DIP and surfacemount packages, specified for the –40°C to +85°C
temperature range. The INA128 is also available in a
dual configuration, the INA2128.
The upgraded INA828 offers a lower input bias
current (0.6 nA, max) and lower noise (7 nV/√Hz)
at the same quiescent current. See the Device
Comparison Table for a selection of precision
instrumentation amplifiers from Texas Instruments.
Device Information
PART NUMBER
INA128,
INA129
(1)
PACKAGE(1)
BODY SIZE (NOM)
SOIC (8)
3.91 mm × 4.90 mm
PDIP (8)
6.35 mm × 9.81 mm
For all available packages, see the package option
addendum at the end of the data sheet.
V+
INA128:
7
G=1+
INA128, INA129
VIN–
2
Overvoltage
Protection
INA129:
A1
1
25 k
(1)
40 k
A3
RG
VIN+
G=1+
6
49.4 k
RG
VO
(1)
8
3
40 k
50 k
RG
25 k
A2
Overvoltage
Protection
(1) INA129: 24.7 k
5
40 k
40 k
Ref
4
V
Simplified Schematic
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
INA128, INA129
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SBOS051F – OCTOBER 1995 – REVISED MAY 2022
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Device Comparison Table...............................................4
6 Pin Configuration and Functions...................................4
7 Specifications.................................................................. 5
7.1 Absolute Maximum Ratings........................................ 5
7.2 ESD Ratings .............................................................. 5
7.3 Recommended Operating Conditions.........................5
7.4 Thermal Information....................................................5
7.5 Electrical Characteristics.............................................6
7.6 Typical Characteristics................................................ 8
8 Detailed Description......................................................12
8.1 Overview................................................................... 12
8.2 Functional Block Diagram......................................... 12
8.3 Feature Description...................................................13
8.4 Device Functional Modes..........................................13
9 Application and Implementation.................................. 14
9.1 Application Information............................................. 14
9.2 Typical Application.................................................... 15
9.3 System Examples..................................................... 19
10 Power Supply Recommendations..............................21
10.1 Low-Voltage Operation........................................... 21
11 Layout........................................................................... 21
11.1 Layout Guidelines................................................... 21
11.2 Layout Example...................................................... 21
12 Device and Documentation Support..........................22
12.1 Device Support....................................................... 22
12.2 Documentation Support.......................................... 22
12.3 Receiving Notification of Documentation Updates..22
12.4 Support Resources................................................. 22
12.5 Trademarks............................................................. 22
12.6 Electrostatic Discharge Caution..............................23
12.7 Glossary..................................................................23
13 Mechanical, Packaging, and Orderable
Information.................................................................... 23
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision E (April 2019) to Revision F (May 2022)
Page
• Updated the numbering format for tables, figures, and cross-references throughout the document..................1
• Added bandwidth and noise specifications in Features .....................................................................................1
• Changed Applications to link to latest end-equipment solutions on ti.com......................................................... 1
• Changed reference from INA819 to INA818 in Device Comparison Table ........................................................ 4
• Added single supply specification to Absolute Maximum Ratings ..................................................................... 5
• Added note clarifying output short-circuit "to ground" in Absolute Maximum Ratings refers to short-circuit to
VS / 2...................................................................................................................................................................5
• Added single supply specification to Recommended Operating Conditions ......................................................5
• Changed input common-mode voltage range specification from V – 2 to (V–) + 2 in Recommended Operating
Conditions ..........................................................................................................................................................5
• Deleted INA128-HT and INA129-HT operating temperature specifications from Recommended Operating
Conditions ..........................................................................................................................................................5
• Added specified temperature range to Recommended Operating Conditions .................................................. 5
• Added VREF = 0 V, VCM = VS / 2, and G = 1 to "unless otherwise noted" conditions in Electrical
Characteristics and Typical Characteristics for clarity.........................................................................................6
• Changed test condition for offset voltage drift specification in Electrical Characteristics from "TA = TMIN
to TMAX" to "TA = –40°C to +85°C" for clarity...................................................................................................... 6
• Changed typical long-term stability specification from ±0.1±3/G µV/mo to ±0.2±3/G µV/mo in Electrical
Characteristics ................................................................................................................................................... 6
• Changed common-mode voltage specification from (V–) + 2 V minimum and (V+) – 2 V minimum across two
rows to (V– ) + 2 V minimum and (V+) – 2 V maximum across one row in Electrical Characteristics ...............6
• Deleted typical common-mode voltage specifications in Electrical Characteristics ..........................................6
• Added test condition of "RS = 0 Ω" to safe input voltage specification in Electrical Characteristics for clarity....6
• Added test condition of "TA = –40°C to +85°C" to input bias current drift specification in Electrical
Characteristics for clarity.................................................................................................................................... 6
• Added test condition of "TA = –40°C to +85°C" to input offset current drift specification in Electrical
Characteristics for clarity.................................................................................................................................... 6
• Changed maximum gain error specification for INA128PA/UA and INA129PA/UA with G = 1 from ±0.01%
to ±0.1% in Electrical Characteristics ................................................................................................................ 6
2
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SBOS051F – OCTOBER 1995 – REVISED MAY 2022
Added test condition of "TA = –40°C to +85°C" for gain drift in Electrical Characteristics for clarity...................6
Changed parameter names from "Voltage - Positive" to "Positive output voltage swing" and from "Voltage Negative" to "Negative output voltage swing" in Electrical Characteristics ........................................................6
Deleted typical positive and negative output voltage swing specifications in Electrical Characteristics ............6
Added test condition of "Continuous to VS / 2" to short-circuit current specification in Electrical Characteristics
for clarity............................................................................................................................................................. 6
Changed typical bandwidth specification for G = 10 from 700 kHz to 640 kHz in Electrical Characteristics ..... 6
Changed typical slew rate specification from 4 V/µs to 1.2 V/µs in Electrical Characteristics ........................... 6
Changed typical settling time specification for G = 1, G = 10, and G = 100 from 7 µs, 7 µs, and
9 µs respectively to 12 µs, 12 µs, and 12 µs, in Electrical Characteristics ........................................................ 6
Deleted redundant voltage range, operating temperature range, and specification temperature range
specifications from Electrical Characteristics .....................................................................................................6
Changed Figures 7-1, 7-3, 7-4, 7-9, 7-10, 7-11, 7-16, 7-17, 7-20, 7-21............................................................. 8
Changed values discussed in Input Common-Mode Range from typical input common-mode voltage range
values to maximum and minimum values.........................................................................................................14
Changed Figure 9-1 to fix missing text and include reference voltage............................................................. 15
Added more detailed guidance concerning REF pin in Design Requirements ................................................ 15
Changed Figures 9-6, 9-7.................................................................................................................................18
Changed Figures 9-10 and 9-11 to fix missing text...........................................................................................19
Added Related Documentation links to Device and Documentation Support ..................................................22
Changes from Revision D (January 2018) to Revision E (April 2019)
Page
• Added information about the newer, upgraded INA828......................................................................................1
• Added Device Comparison Table ...................................................................................................................... 4
Changes from Revision C (October 2015) to Revision D (January 2018)
Page
• Added top navigator icon for TI Reference Design ............................................................................................1
• Changed "±0.5±0/G" to "±0.5±20/G" in MAX column of Offset voltage RTI vs temperature row of Electrical
Characteristics.................................................................................................................................................... 6
Changes from Revision B (February 2005) to Revision C (April 2015)
Page
• Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and
Implementation section, Power Supply Recommendations section, Layout section, Device and
Documentation Support section, and Mechanical, Packaging, and Orderable Information section................... 1
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5 Device Comparison Table
DEVICE
DESCRIPTION
GAIN EQUATION
RG PINS AT PIN
G = 1 + 50 kΩ / RG
1, 8
G = 1 + 49.4 kΩ / RG
2, 3
INA818
35-µV offset, 0.4-µV/°C VOS drift, 8-nV/√Hz noise, low-power,
precision instrumentation amplifier
INA821
35-µV offset, 0.4-µV/°C VOS drift, 7-nV/√Hz noise, high-bandwidth,
precision instrumentation amplifier
INA828
50-µV offset, 0.5-µV/°C VOS drift, 7-nV/√Hz noise, low-power,
precision instrumentation amplifier
G = 1 + 50 kΩ / RG
1, 8
INA333
25-µV VOS, 0.1-µV/°C VOS drift, 1.8-V to 5-V, RRO, 50-µA IQ,
chopper-stabilized INA
G = 1 + 100 kΩ / RG
1, 8
PGA280
20-mV to ±10-V programmable gain IA with 3-V or 5-V differential
output; analog supply up to ±18 V
Digital programmable
N/A
INA159
G = 0.2 V differential amplifier for ±10-V to 3-V and 5-V
conversion
G = 0.2 V/V
N/A
PGA112
Precision programmable gain op amp with SPI
Digital programmable
N/A
6 Pin Configuration and Functions
RG
1
8
RG
V− IN
2
7
V+
V+IN
3
6
VO
V−
4
5
Ref
Figure 6-1. D (8-Pin SOIC) and P (8-Pin PDIP) Packages, Top View
Table 6-1. Pin Functions
PIN
NAME
REF
4
NO.
TYPE
DESCRIPTION
5
Input
RG
1,8
—
Reference input. This pin must be driven by low impedance or connected to ground.
V–
4
Power
Negative supply
V+
7
Power
Positive supply
VIN–
2
Input
Negative input
VIN+
3
Input
Positive input
VO
6
Output
Gain setting pin. For gains greater than 1, place a gain resistor between pin 1 and pin 8.
Output
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
VS
Supply voltage
MAX
Dual supply, VS = (V+) – (V–)
±18
Single supply, VS = (V+) – 0 V
36
Analog input voltage
Output short-circuit(2)
TA
–40
Junction temperature
Lead temperature (soldering, 10 s)
(1)
(2)
V
±40
V
125
°C
150
°C
300
°C
125
°C
Continuous
Operating temperature
Tstg
UNIT
Storage temperature
–55
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
Short-circuit to VS / 2.
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC
JS-001(1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±50
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
VS
Single-supply
Supply voltage
Dual-supply
Input common-mode voltage range for VO = 0 V
TA
MIN
TYP
MAX
4.5
30
36
±2.25
±15
±18
UNIT
V
(V–) + 2
(V+) – 2
V
–40
85
°C
Specified temperature
7.4 Thermal Information
INA12x
THERMAL
METRIC(1)
D (SOIC)
P (PDIP)
8 PINS
8 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
110
46.1
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
57
34.1
°C/W
RθJB
Junction-to-board thermal resistance
54
23.4
°C/W
ψJT
Junction-to-top characterization parameter
11
11.3
°C/W
ψJB
Junction-to-board characterization parameter
53
23.2
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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7.5 Electrical Characteristics
at TA = 25°C, VS = ±15 V, RL = 10 kΩ, VREF = 0 V, VCM = VS / 2, and G = 1 (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
INA12xP, INA12xU
±10 ±100 / G
±50 ±500 / G
INA12xPA, INA12xUA
±25 ±100 / G ±125 ±1000 / G
UNIT
INPUT
VOS
PSRR
Offset voltage (RTI)
1 ≤ G ≤ 10000
Offset voltage drift (RTI)
TA = –40°C to +85°C
Power-supply rejection
ratio (RTI)
VS = ±2.25 V to ±18 V
INA12xP, INA12xU
±0.2 ±2 / G
±0.5 ±20 / G
INA12xPA, INA12xUA
±0.2 ±5 / G
±1 ±20 / G
±0.2 ±20 / G
±1 ±100 / G
INA12xP, INA12xU
INA12xPA, INA12xUA
±2 ±200 / G
Long-term stability
Input impedance
VCM
±0.2 ±3 / G
Differential
Common-mode
voltage(2)
VO = 0 V
Safe input voltage
RS = 0 Ω
G=1
G = 10
CMRR
Common-mode rejection
ΔRS = 1 kΩ, VCM = ±13 V
ratio
G = 100
G = 1000
INA12xP, INA12xU
80
INA12xPA, INA12xUA
73
INA12xP, INA12xU
INA12xPA, INA12xUA
INA12xP, INA12xU
100
(V+) – 2
V
±40
V
86
106
93
120
INA12xPA, INA12xUA
110
INA12xP, INA12xU
120
INA12xPA, INA12xUA
110
µV/V
GΩ || pF
100 || 9
(V–) + 2
µV/°C
µV/mo
10 || 2
Common-mode
µV
dB
125
130
INPUT BIAS CURRENT
IB
Input bias current
Input bias current drift
IOS
Input offset current
Input offset current drift
INA12xP, INA12xU
±2
INA12xPA, INA12xUA
±5
±10
TA = –40°C to +85°C
±30
INA12xP, INA12xU
±1
INA12xPA, INA12xUA
pA/℃
±5
±10
TA = –40°C to +85°C
±30
nA
nA
nA
pA/℃
NOISE
eN
Voltage noise (RTI)
G = 1000, RS = 0 Ω
f = 10 Hz
10
f = 100 Hz
8
f = 1 kHz
fB = 0.1 Hz to 10 Hz
In
6
Current noise
8
0.2
f = 10 Hz
0.9
f = 1 kHz
0.3
fB = 0.1 Hz to 10 Hz
30
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nV/√Hz
µVPP
pA/√Hz
pAPP
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7.5 Electrical Characteristics (continued)
at TA = 25°C, VS = ±15 V, RL = 10 kΩ, VREF = 0 V, VCM = VS / 2, and G = 1 (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
GAIN
Gain equation
G
INA128
1 + (50 kΩ / RG)
INA129
1 + (49.4 kΩ / RG)
Gain
1
G=1
G = 10
GE
Gain error
G = 100
G = 1000
Gain drift(4)
TA = –40°C to +85°C
G = 1, VO = ±13.6 V
Gain nonlinearity(1)
G = 10
G = 100
INA12xP, INA12xU
V/V
10000
±0.01
INA12xPA, INA12xUA
V/V
±0.024
±0.1
INA12xP, INA12xU
±0.02
INA12xPA, INA12xUA
±0.4
±0.5
INA12xP, INA12xU
±0.05
INA12xPA, INA12xUA
±0.5
%
±0.7
INA12xP, INA12xU
±0.5
±1
±1
±10
±25
±100
±0.0001
±0.001
INA12xPA, INA12xUA
±2
50-kΩ or 49.4-kΩ resistance(3)
INA12xP, INA12xU
INA12xPA, INA12xUA
ppm/°C
±0.002
INA12xP, INA12xU
±0.0003
INA12xPA, INA12xUA
±0.002
±0.004 % of FSR
INA12xP, INA12xU
±0.0005
INA12xPA, INA12xUA
±0.002
±0.004
G = 1000
±0.001
OUTPUT
Positive output voltage
swing
(V+) – 1.4
V
Negative output voltage
swing
(V–) + 1.4
V
CL
Load capacitance
Stable operation
ISC
Short-circuit current
Continuous to VS / 2
1000
pF
+6/–15
mA
G=1
1.3
MHz
G = 10
640
G = 100
200
FREQUENCY RESPONSE
BW
Bandwidth, –3 dB
SR
Slew rate
tS
G = 1000
20
G = 5, VO = ±10 V
1.2
Settling time
To 0.01%
Overload recovery
50% input overload
G=1
12
G = 10
12
G = 100
12
G = 1000
80
kHz
V/µs
µs
4
µs
POWER SUPPLY
IQ
(1)
(2)
(3)
(4)
Quiescent current
VIN = 0 V
±700
±750
µA
Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is ±0.001%
Input common-mode voltage varies with output voltage; see Typical Characteristics.
Temperature coefficient of the 50-kΩ or 49.4-kΩ term in the gain equation.
Specified by wafer test.
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7.6 Typical Characteristics
at TA = 25°C, VS = ±15 V, RL = 10 kΩ, VREF = 0 V, VCM = VS / 2, and G = 1 (unless otherwise noted)
80
140
60
Common−Mode Rejection (dB)
G=1
G = 10
G = 100
G = 1000
Gain (dB)
40
20
0
-20
G = 1000V/V
G = 100V/V
120
G = 10V/V
100
G = 1V/V
80
60
40
20
0
-40
100
1k
10k
100k
1M
10M
Frequency (Hz)
10
100
1k
100k
10k
1M
Frequency (Hz)
C001
Figure 7-1. Gain vs Frequency
Figure 7-2. Common-Mode Rejection vs Frequency
160
140
Negative Power Supply
Rejection Ratio (dB)
Positive Power Supply
Rejection Ratio (dB)
140
120
100
80
60
40
G=1
G = 10
G = 100
G = 1000
20
0
10
100
80
60
G=1
G = 10
G = 100
G = 1000
40
20
0
100
1k
Frequency (Hz)
10k
1
100k
10
10k
100k
C004
5
G ≥ 10
G ≥ 10
Common−Mode Voltage (V)
G=1
G=1
5
VD/2
0
VD/2
+
−5
+15V
−
+
VO
−
Ref
+
VCM
− 15V
−10
3
2
G ≥ 10
G ≥ 10
4
10
G=1
G=1
G ≥ 10
1
0
G=1
−1
−2
−3
VS = ±5V
VS = ±2.5V
−4
−5
−10
−5
0
5
10
15
−5
−4
Output Voltage (V)
−3
−2
−1
0
1
2
3
4
5
Output Voltage (V)
VS = ±15 V
VS = ±5 V, ±2.5 V
Figure 7-5. Input Common-Mode Range vs Output Voltage
8
1k
Figure 7-4. Negative Power Supply Rejection vs Frequency
15
−15
−15
100
Frequency (Hz)
Figure 7-3. Positive Power Supply Rejection vs Frequency
Common−Mode Voltage (V)
120
Figure 7-6. Input Common-Mode Range vs Output Voltage
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7.6 Typical Characteristics (continued)
100
1k
100
Input Bias Current Noise (pA/ Hz)
0.01%
G = 1 V/V
10
100
G = 10 V/V
1
10
G = 100 V/V, 1000 V/V
Current Noise
Settling Time (ms)
0.1%
10
1
0.1
1
1
10
100
1k
1
10k
10
100
Figure 7-8. Settling Time vs Gain
Figure 7-7. Input-Referred Noise vs Frequency
0.85
0.825
10
20
8
15
6
Input Current (mA)
Quiescent Current (mA)
0.8
0.775
0.75
0.725
0.7
0.675
0.65
0.625
10
4
2
5
0
0
±2
-5
±4
-10
±6
0.6
Unit 1
Unit 2
0.575
0.55
-40
1000
Gain (V/V)
Frequency (Hz)
-20
0
20
40
60
80
Temperature ( C)
100
120
Input Current
±8
-15
Output Voltage
-20
±10
±40
140
±30
±20
±10
0
10
20
30
40
Input Voltage (V)
Figure 7-9. Quiescent Current vs Temperature
Output Voltage (V)
Input-Referred Voltage Noise (nV/ Hz)
at TA = 25°C, VS = ±15 V, RL = 10 kΩ, VREF = 0 V, VCM = VS / 2, and G = 1 (unless otherwise noted)
C015
Figure 7-10. Input Overvoltage V/I Characteristics
Input Bias Current (nA)
2
1
IOS
0
IB
−1
Typical IB and IOS
Range ±2nA at 25°C
−2
−75
−50
−25
0
25
50
75
100
125
Temperature (°C)
Figure 7-11. Input Offset Voltage Warm-Up
Figure 7-12. Input Bias Current vs Temperature
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7.6 Typical Characteristics (continued)
(V+)
(V+)
(V+)−0.4
(V+)−0.4
(V+)−0.8
(V+)−1.2
(V−)+1.2
(V−)+0.8
(V−)+0.4
(V+)−0.8
(V+)−1.2
(V−)+1.2
(V−)+0.8
(V−)+0.4
Output Voltage Swing (V)
(V+)
(V+)−0.4
Output Voltage Swing (V)
Output Voltage (V)
at TA = 25°C, VS = ±15 V, RL = 10 kΩ, VREF = 0 V, VCM = VS / 2, and G = 1 (unless otherwise noted)
+25°C
(V+)−0.8
(V+)−1.2
+85°C
−40°C
RL = 10kΩ
+25°C
(V−)+1.2
−40°C
+85°C
(V−)+0.8
+85°C
−40°C
(V−)+0.4
(V−)
(V−)
0
1
2
3
4
(V−)
0
Output Current (mA)
5
10
15
20
Power Supply Voltage (V)
Figure 7-14. Output Voltage Swing vs Power Supply Voltage
Figure 7-13. Output Voltage Swing vs Output Current
18
20
VS = ±15 V
18
−ISC
VS = ±5 V
16
14
Output Amplitude (Vp)
Short−Circuit Current (mA)
16
12
10
8
6
+ISC
4
2
14
12
10
8
6
4
2
0
0
−75
−50
−25
0
25
50
75
100
125
100
1
-40
0.1
-60
-80
0.01
G=1
G = 10
G = 100
10
100
1k
Frequency (Hz)
10k
-100
100k
Total Harmonic Distortion + Noise (dB)
Total Harmonic Distortion + Noise (%)
Figure 7-15. Short Circuit Output Current vs Temperature
0.001
1k
10k
100k
1M
10M
Frequency (Hz)
Temperature (°C)
C001
Figure 7-16. Maximum Output Voltage vs Frequency
0.1µV/div
1s/div
C002
G ≥ 100
Figure 7-17. Total Harmonic Distortion + Noise vs Frequency
10
Figure 7-18. 0.1 to 10-Hz Input-Referred Voltage Noise
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7.6 Typical Characteristics (continued)
at TA = 25°C, VS = ±15 V, RL = 10 kΩ, VREF = 0 V, VCM = VS / 2, and G = 1 (unless otherwise noted)
G=1
G = 100
20mV/div
20mV/div
G = 10
G = 1000
20µs/div
5µs/div
G = 100, 1000
G = 1, 10
Figure 7-20. Small Signal
Amplitude (2 V/div)
Input, G = 1
Output, G = 1
Input, G = 10
Output, G = 10
Amplitude (2 V/div)
Figure 7-19. Small Signal
Input Step (Not to Scale)
Output, G = 100
Output, G = 1000
Time (10 s/div)
Time (10 s/div)
G = 1, 10
G = 100, 1000
Figure 7-21. Large Signal
Figure 7-22. Large Signal
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8 Detailed Description
8.1 Overview
The INA128 and INA129 (INA12x) instrumentation amplifiers are outfitted with an input protection circuit and
input buffer amplifiers. These features eliminate the need for input impedance matching and make the amplifier
an excellent choice for use in measurement and test equipment. Additional characteristics of the INA12x include
a very-low dc offset, low drift, low noise, very-high open-loop gain, very-high common-mode rejection ratio, and
very-high input impedances. The INA12x is used where great accuracy and stability of the circuit, both short and
long term, are required.
8.2 Functional Block Diagram
REF
Overvoltage
Protection
+
RG (Optional)
+IN
+
–IN
12
Overvoltage
Protection
OUT
+
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8.3 Feature Description
The INA12x are low power, general-purpose instrumentation amplifiers offering excellent accuracy. The versatile
three-op-amp design and small size make the amplifiers an excellent choice for a wide range of applications.
Current-feedback input circuitry provides wide bandwidth, even at high gain. A single external resistor sets
any gain from 1 to 10,000. The INA12x are laser trimmed for very low offset voltage (25 μV typical) and high
common-mode rejection (93 dB at G ≥ 100). These devices operate with power supplies as low as ±2.25 V, and
a quiescent current of 2 mA, typically. The internal input protection can withstand up to ±40 V without damage,
as shown in Figure 7-10.
8.3.1 Noise Performance
The INA12x provide very low noise in most applications. Low-frequency noise is approximately 0.2 µVPP
measured from 0.1 to 10 Hz (G ≥ 100). This feature provides dramatically improved noise when compared
to state-of-the-art chopper-stabilized amplifiers.
0.1mV/div
1s/div
G ≥ 100
Figure 8-1. 0.1-Hz to 10-Hz Input-Referred Voltage Noise
8.4 Device Functional Modes
The INA12x have a single functional mode and operate when the power-supply voltage is greater than 4.5 V
(±2.25 V). The maximum power-supply voltage for the INA12x is 36 V (±18 V).
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9 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
9.1 Application Information
The INA12x measure a small differential voltage with a high common-mode voltage developed between
the noninverting and inverting input. The high input-voltage protection circuit in conjunction with high input
impedance make the INA12x an excellent choice for a wide range of applications. The ability to set the
reference pin to adjust the functionality of the output signal offers additional flexibility that is practical for multiple
configurations.
9.1.1 Input Common-Mode Range
The linear input voltage range of the INA12x input circuitry ranges from approximately 2 V less than the positive
supply voltage to 2 V greater than the negative supply. A differential input voltage causes the output voltage to
increase; however, the linear input range is limited by the output voltage swing of amplifiers A1 and A2. Thus,
the linear common-mode input range is related to the output voltage of the complete amplifier. This behavior also
depends on the supply voltage (see Figure 7-6).
Input overload can produce an output voltage that appears normal. For example, if an input-overload condition
drives both input amplifiers to their positive output swing limit, the difference voltage measured by the output
amplifier is near zero. The output of A3 is near 0 V even though both inputs are overloaded.
14
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9.2 Typical Application
Figure 9-1 shows the basic connections required for operation of the INA12x. Applications with noisy or high
impedance power supplies may require decoupling capacitors close to the device pins as shown. The output is
referred to the output reference (REF) pin, which is normally grounded. This connection must be low-impedance
to provide good common-mode rejection. A resistance of 8 Ω in series with the REF pin causes a typical device
to degrade to approximately 80 dB CMR (G = 1).
V+
0.1µF
INA129:
INA128:
G= 1+
50 k
RG
G =1 +
INA128
DESIRED
GAIN (V/V)
1
2
5
10
20
50
100
200
500
1000
2000
5000
10000
RG
()
NC
50.00k
12.50k
5.556k
2.632k
1.02k
505.1
251.3
100.2
50.05
25.01
10.00
5.001
49.4 k
RG
7
INA128, INA129
INA129
NEAREST
1% RG ()
NC
49.9k
12.4k
5.62k
2.61k
1.02k
511
249
100
49.9
24.9
10
4.99
RG
( )
VIN–
NEAREST
1% RG ()
NC
49.4k
12.35k
5489
2600
1008
499
248
99
49.5
24.7
9.88
4.94
2
Overvoltage
Protection
A1
1
NC
49.9k
12.4k
5.49k
2.61k
1k
499
249
100
49.9
24.9
9.76
4.87
40 k
(1)
25 k
VO = G • (VIN+ – VIN– ) + VREF
+
(1)
25 k
8
VIN+
6
A3
RG
3
40 k
Load
A2
Overvoltage
Protection
40 k
(1) INA129: 24.7 k.
4
40 k
5
Ref
VREF
VO
0.1 µF
NC: No Connection
VIN–
Also drawn in simplified form:
VIN+
RG
INA128
VO
V
Ref
Figure 9-1. Basic Connections
9.2.1 Design Requirements
The devices are configured to monitor the input differential voltage when the input signal gain is set by the
external resistor, RG. The output signal is developed with respect to the voltage on the reference pin, REF.
The most common application is where the output is referenced to ground when no input signal is present by
connecting the REF pin to ground, as Figure 9-1 shows. In single-supply operation, offsetting the output signal
to a precise midsupply level is useful (for example, 2.5 V in a 5-V supply environment). To accomplish this level
shift, a voltage source must be connected to the REF pin to level shift the output so that the device can drive a
single-supply ADC.
Voltage reference devices are an excellent option for providing a low-impedance voltage source for the reference
pin. However, if a resistor voltage divider is used to generate a reference voltage, the voltage must be buffered
by an op amp to avoid CMRR degradation.
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9.2.2 Detailed Design Procedure
9.2.2.1 Setting the Gain
The gain (G) is set by connecting a single external resistor, RG, between pins 1 and 8:
INA128: G = 1 + 50 kΩ / RG
(1)
INA129: G = 1 + 49.4 kΩ / RG
(2)
Commonly used gains and resistor values are shown in Figure 9-1.
The 50-kΩ term in Equation 1 and the 49.4-kΩ term in Equation 2 come from the sum of the two internal
feedback resistors of A1 and A2. These on-chip metal film resistors are laser trimmed to accurate, absolute
values. The accuracy and temperature coefficient of these internal resistors are included in the gain accuracy
and drift specifications in the Electrical Characteristics table.
The stability and temperature drift of the external gain setting resistor, RG, also affects gain. The contribution
of RG to gain accuracy and drift can be directly inferred from Equation 1 and Equation 2. Low resistor values
required for high gain can make wiring resistance important. Sockets add to the wiring resistance, which
contributes additional gain error (possibly an unstable gain error) in gains of approximately 100 or greater.
9.2.2.2 Dynamic Performance
The typical performance curve in Figure 7-1 shows that despite low quiescent current, the INA12x achieve
wide bandwidth even at high gain. This performance is due to the current-feedback topology of the input stage
circuitry. Settling time also remains excellent at high gain.
9.2.2.3 Offset Trimming
The INA12x is laser trimmed for low-offset voltage and low offset voltage drift. Most applications require no
external offset adjustment. Figure 9-2 shows an optional circuit for trimming the output offset voltage. The
voltage applied to the REF pin is summed with the output. The op-amp buffer provides low impedance at the
REF pin to preserve good common-mode rejection.
V−
IN
V+
RG
+
VIN
INA128
VO
100µA
1/2 REF200
Ref
OPA177
±10mV
Adjustment Range
10kΩ
100Ω
100Ω
100µA
1/2 REF200
V−
Figure 9-2. Optional Trimming of Output Offset Voltage
16
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9.2.2.4 Input Bias Current Return Path
The input impedance of the INA12x is extremely high: approximately 10 GΩ. However, a path must be provided
for the input bias current of both inputs. This input bias current is approximately ±2 nA. High input impedance
means that this input bias current changes very little with varying input voltage.
Input circuitry must provide a path for this input bias current for proper operation. Figure 9-3 shows various
provisions for an input bias current path. Without a bias current path, the inputs float to a potential that exceeds
the common-mode range, and the input amplifiers saturate.
If the differential source resistance is low, the bias current return path can be connected to one input (see
the thermocouple example in Figure 9-3). With higher source impedance, use two equal resistors to provide
a balanced input, with possible advantages of lower input offset voltage due to bias current, and better highfrequency common-mode rejection.
For more details about why a valid input bias current return path is necessary, see the Importance of Input Bias
Current Return Paths in Instrumentation Amplifier Applications application note.
Microphone,
Hydrophone
etc.
INA128
47kΩ
47kΩ
Thermocouple
INA128
10kΩ
INA128
Center−tap provides
bias current return.
Figure 9-3. Providing an Input Common-Mode Current Path
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9.2.3 Application Curves
G=1
G = 10 0
20mV/div
20mV/div
G = 10
G = 10 0 0
20ms/div
5ms/div
G = 100, 1000
G = 1, 10
Figure 9-5. Small Signal
Amplitude (2 V/div)
Input, G = 1
Output, G = 1
Input, G = 10
Output, G = 10
Amplitude (2 V/div)
Figure 9-4. Small Signal
Input Step (Not to Scale)
Output, G = 100
Output, G = 1000
Time (10 s/div)
Time (10 s/div)
G = 1, 10
G = 100, 1000
Figure 9-6. Large Signal
18
Figure 9-7. Large Signal
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9.3 System Examples
+5V
2.5V − ∆V
RG
300Ω
VO
INA128
Ref
2.5V + ∆V
Figure 9-8. Bridge Amplifier
−
VIN
+
RG
VO
INA128
Ref
R1
1MΩ
C1
0.1µF
1
f−3dB=
2πR1C1
OPA130
= 1.59Hz
Figure 9-9. AC-Coupled Instrumentation Amplifier
V+
+10V
6
REF102
R1
2
R2
4
Pt100
Cu
K
Cu
RG
INA128
Ref
R3
100 = Pt100 at 0°C
ISA
TYPE
E
J
K
T
MATERIAL
+ Chromel
Constantan
+ Iron
Constantan
+ Chromel
Alumel
+ Copper
Constantan
VO
SEEBECK
COEFICIENT
(µV/°C)
R1, R2
58.5
66.5 k
50.2
76.8 k
39.4
97.6 k
38.0
102 k
Figure 9-10. Thermocouple Amplifier With RTD Cold-Junction Compensation
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IO =
R1
VIN
RG
INA128
V IN
• G
R1
+
Ref
IB
A1
A1
IB ERROR
OPA177
±1.5 nA
OPA131
±50 pA
OPA602
±1 pA
OPA128
±75 fA
IO
Load
Figure 9-11. Differential Voltage to Current Converter
RG = 5.6kΩ
2.8kΩ
G = 10
LA
RA
RG/2
INA128
VO
Ref
2.8kΩ
390kΩ
1/2
OPA2131
RL
390kΩ
VG
10kΩ
VG
1/2
OPA2131
NOTE: Due to the INA128’s current-feedback
topology, VG is approximately 0.7V less than
the common-mode input voltage. This DC offset
in this guard potential is satisfactory for many
guarding applications.
Figure 9-12. ECG Amplifier With Right-Leg Drive
20
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10 Power Supply Recommendations
The minimum power supply voltage for INA12x is ±2.25 V and the maximum power supply voltage is ±18 V.
This minimum and maximum range covers a wide range of power supplies; but for optimum performance, ±15
V is recommended. Add a bypass capacitor at the input to compensate for the layout and power supply source
impedance.
10.1 Low-Voltage Operation
The INA12x operate on power supplies as low as ±2.25 V. Performance remains excellent with power supplies
ranging from ±2.25 V to ±18 V. Most parameters vary only slightly throughout this supply voltage range; see
Section 7.6.
Operation at very-low supply voltages requires careful attention to make sure that the input voltages remain
within the linear range. Voltage swing requirements of internal nodes limit the input common-mode range with
low power-supply voltage. Figure 7-6 shows the range of linear operation for ±15-V, ±5-V, and ±2.5-V supplies.
11 Layout
11.1 Layout Guidelines
Place the power-supply bypass capacitor as close as possible to the supply and ground pins. The recommended
value of this bypass capacitor is 0.1 μF to 1 μF. If necessary, add more decoupling capacitance to compensate
for noisy or high-impedance power supplies. These decoupling capacitors must be placed between the power
supply and INA12x devices.
The gain resistor must be placed close to pin 1 and pin 8. This placement limits the layout loop and minimizes
any noise coupling into the devices.
11.2 Layout Example
Gain Resistor
Bypass
Capacitor
VIN
VIN
–
+
R6
R6
VIH–
V+
VIH+
VO
V–
REF
V+
VOUT
GND
Bypass
Capacitor
V–
GND
Figure 11-1. Recommended Layout
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12 Device and Documentation Support
12.1 Device Support
12.1.1 Development Support
12.1.1.1 PSpice® for TI
PSpice® for TI is a design and simulation environment that helps evaluate performance of analog circuits. Create
subsystem designs and prototype solutions before committing to layout and fabrication, reducing development
cost and time to market.
12.1.1.2 TINA-TI™ Simulation Software (Free Download)
TINA-TI™ simulation software is a simple, powerful, and easy-to-use circuit simulation program based on a
SPICE engine. TINA-TI simulation software is a free, fully-functional version of the TINA™ software, preloaded
with a library of macromodels, in addition to a range of both passive and active models. TINA-TI simulation
software provides all the conventional dc, transient, and frequency domain analysis of SPICE, as well as
additional design capabilities.
Available as a free download from the Analog eLab Design Center, TINA-TI simulation software offers extensive
post-processing capability that allows users to format results in a variety of ways. Virtual instruments offer
the ability to select input waveforms and probe circuit nodes, voltages, and waveforms, creating a dynamic
quick-start tool.
Note
These files require that either the TINA software or TINA-TI software be installed. Download the free
TINA-TI simulation software from the TINA-TI™ software folder.
12.2 Documentation Support
12.2.1 Related Documentation
For related documentation see the following:
• Texas Instruments, Comprehensive Error Calculation for Instrumentation Amplifiers application note
• Texas Instruments, Importance of Input Bias Current Return Paths in Instrumentation Amplifier Applications
application note
12.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
12.4 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
12.5 Trademarks
TINA-TI™ and TI E2E™ are trademarks of Texas Instruments.
TINA™ is a trademark of DesignSoft, Inc.
PSpice® is a registered trademark of Cadence Design Systems, Inc.
All trademarks are the property of their respective owners.
22
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12.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
12.7 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
28-May-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
INA128P
ACTIVE
PDIP
P
8
50
RoHS & Green
Call TI
N / A for Pkg Type
INA128P
Samples
INA128PA
ACTIVE
PDIP
P
8
50
RoHS & Green
Call TI
N / A for Pkg Type
INA128P
A
Samples
INA128PG4
ACTIVE
PDIP
P
8
50
RoHS & Green
Call TI
N / A for Pkg Type
INA128P
Samples
INA128U
ACTIVE
SOIC
D
8
75
RoHS & Green
Call TI
Level-3-260C-168 HR
INA
128U
Samples
INA128U/2K5
ACTIVE
SOIC
D
8
2500
RoHS & Green
Call TI
Level-3-260C-168 HR
INA
128U
Samples
INA128U/2K5G4
ACTIVE
SOIC
D
8
2500
RoHS & Green
Call TI
Level-3-260C-168 HR
INA
128U
Samples
INA128UA
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 125
INA
128U
A
INA128UA/2K5
ACTIVE
SOIC
D
8
2500
RoHS & Green
Call TI
Level-3-260C-168 HR
-40 to 125
INA
128U
A
INA128UA/2K5E4
ACTIVE
SOIC
D
8
2500
RoHS & Green
Call TI
Level-3-260C-168 HR
-40 to 125
INA
128U
A
INA128UA/2K5G4
ACTIVE
SOIC
D
8
2500
RoHS & Green
Call TI
Level-3-260C-168 HR
-40 to 125
INA
128U
A
INA128UAE4
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 125
INA
128U
A
INA128UAG4
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 125
INA
128U
A
INA128UG4
ACTIVE
SOIC
D
8
75
RoHS & Green
Call TI
Level-3-260C-168 HR
INA129P
ACTIVE
PDIP
P
8
50
RoHS & Green
Call TI
INA129PA
ACTIVE
PDIP
P
8
50
RoHS & Green
Call TI
Addendum-Page 1
Samples
Samples
Samples
Samples
Samples
Samples
INA
128U
Samples
N / A for Pkg Type
INA129P
Samples
N / A for Pkg Type
INA129P
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
28-May-2022
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
A
INA129PG4
ACTIVE
PDIP
P
8
50
RoHS & Green
Call TI
N / A for Pkg Type
INA129P
Samples
INA129U
ACTIVE
SOIC
D
8
75
RoHS & Green
Call TI
Level-3-260C-168 HR
INA
129U
Samples
INA129U/2K5
ACTIVE
SOIC
D
8
2500
RoHS & Green
Call TI
Level-3-260C-168 HR
INA
129U
Samples
INA129UA
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 125
INA
129U
A
INA129UA/2K5
ACTIVE
SOIC
D
8
2500
RoHS & Green
Call TI
Level-3-260C-168 HR
-40 to 125
INA
129U
A
INA129UA/2K5G4
ACTIVE
SOIC
D
8
2500
RoHS & Green
Call TI
Level-3-260C-168 HR
-40 to 125
INA
129U
A
INA129UAE4
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 125
INA
129U
A
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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