INA163UAE4

INA163 SBOS177D – NOVEMBER 2000 – REVISED MAY 2005 Low-Noise, Low-Distortion INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION ● ● ● ● ● ● ● The INA163 is a very low-noise, low-distortion, monolithic instrumentation amplifier. Its current-feedback circuitry achieves very wide bandwidth and excellent dynamic response over a wide range of gain. It is ideal for low-level audio signals such as balanced lowimpedance microphones. Many industrial, instrumentation, and medical applications also benefit from its low noise and wide bandwidth. Unique distortion cancellation circuitry reduces distortion to extremely low levels, even in high gain. The INA163 provides near-theoretical noise performance for 200Ω source impedance. Its differential input, low noise, and low distortion provide superior performance in professional microphone amplifier applications. The INA163’s wide supply voltage, excellent output voltage swing, and high output current drive allow its use in high-level audio stages as well. The INA163 is available in a space-saving SO-14 surface-mount package, specified for operation over the –40°C to +85°C temperature range. LOW NOISE: 1nV/√Hz at 1kHz LOW THD+N: 0.002% at 1kHz, G = 100 WIDE BANDWIDTH: 800kHz at G = 100 WIDE SUPPLY RANGE: ±4.5V to ±18V HIGH CMR: > 100dB GAIN SET WITH EXTERNAL RESISTOR SO-14 SURFACE-MOUNT PACKAGE APPLICATIONS ● PROFESSIONAL MICROPHONE PREAMPS ● MOVING-COIL TRANSDUCER AMPLIFIERS ● DIFFERENTIAL RECEIVERS ● BRIDGE TRANSDUCER AMPLIFIERS VO1 1 INA163 VIN− 4 3 6kΩ 6kΩ A1 Sense 8 3kΩ RG A3 3kΩ VO 9 G=1+ 12 VIN+ 6kΩ 6kΩ A2 6000 RG Ref 10 5 14 VO 2 11 V+ 6 V− Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. Copyright © 2000–2005, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. www.ti.com ELECTROSTATIC DISCHARGE SENSITIVITY PIN CONFIGURATION Top View This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. VO1 1 14 VO2 NC 2 13 NC GS1 3 12 GS2 VIN− 4 11 V+ VIN+ 5 10 Ref V− 6 9 VO NC 7 8 Sense NC = No Internal Connection ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ABSOLUTE MAXIMUM RATINGS(1) Power Supply Voltage ....................................................................... ±18V Signal Input Terminals, Voltage(2) .................. (V–) – 0.5V to (V+) + 0.5V Current(2) .................................................... 10mA Output Short-Circuit to Ground ............................................... Continuous Operating Temperature .................................................. –55°C to +125°C Storage Temperature ..................................................... –55°C to +125°C Junction Temperature .................................................................... +150°C Lead Temperature (soldering, 10s) ............................................... +300°C NOTES: (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. (2) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5V beyond the supply rails should be current limited to 10mA or less. PACKAGE/ORDERING INFORMATION(1) PRODUCT PACKAGE-LEAD DESIGNATOR MARKING INA163UA SO-14 Surface Mount D INA163UA NOTE: (1) For the most current package and ordering information, see the Package Option Addendum located at the end of this document, or see the TI web site at www.ti.com. INA163 2 www.ti.com SBOS177D ELECTRICAL CHARACTERISTICS: VS = ±15V TA = +25°C and at rated supplies, VS = ±15V, RL = 2kΩ connected to ground, unless otherwise noted. INA163UA PARAMETER CONDITIONS MIN GAIN Range Gain Equation(1) Gain Error, G = 1 G = 10 G = 100 G = 1000 Gain Temp Drift Coefficient, G = 1 G > 10 Nonlinearity, G = 1 G = 100 INPUT STAGE NOISE Voltage Noise fO = 1kHz fO = 100Hz fO = 10Hz Current Noise fO = 1kHz 1 to 10000 G = 1 + 6k/RG ±0.1 ±0.2 ±0.2 ±0.5 ±1 ±25 ±0.0003 ±0.0006 INPUT VOLTAGE RANGE Common-Mode Voltage Range Common-Mode Rejection, G = 1 G = 100 MAX UNITS V/V ±0.25 ±0.7 ±10 ±100 % % % % ppm/°C ppm/°C % of FS % of FS RSOURCE = 0Ω OUTPUT STAGE NOISE Voltage Noise, fO = 1kHz INPUT OFFSET VOLTAGE Input Offset Voltage vs Temperature vs Power Supply TYP VCM = VOUT = 0V TA = TMIN to TMAX VS = ±4.5V to ±18V VIN+ – VIN– = 0V VIN+ – VIN– = 0V VCM = ±11V, RSRC = 0Ω 1 1.2 2 nV/√Hz nV/√Hz nV/√Hz 0.8 pA/√Hz 60 nV/√Hz 50 + 2000/G 1 + 20/G 1 + 50/G (V+) – 4 (V–) + 4 70 100 INPUT BIAS CURRENT Initial Bias Current vs Temperature Initial Offset Current vs Temperature 250 + 5000/G 3 + 200/G (V+) – 3 (V–) + 3 80 116 2 10 0.1 0.5 µV µV/°C µV/V V V dB dB 12 1 µA nA/°C µA nA/°C INPUT IMPEDANCE DYNAMIC RESPONSE Bandwidth, Small Signal, –3dB, G = 1 G = 100 Slew Rate THD+Noise, f = 1kHz Settling Time, 0.1% 0.01% Overload Recovery OUTPUT Voltage Load Capacitance Stability Short-Circuit Current POWER SUPPLY Rated Voltage Voltage Range Current, Quiescent Differential Common-Mode 60 2 60 2 MΩ  pF MΩ  pF G = 100 G = 100, 10V Step G = 100, 10V Step 50% Overdrive 3.4 800 15 0.002 2 3.5 1 kHz V/µs % µs µs µs (V+) – 1.8 (V–) + 1.8 1000 ±60 V V pF mA RL = 2kΩ to Gnd (V+) – 2 (V–) + 2 Continuous-to-Common ±4.5 IO = 0mA TEMPERATURE RANGE Specification Operating θJA ±15 ±10 –40 –40 ±18 ±12 +85 +125 100 V V mA °C °C °C/W NOTE: (1) Gain accuracy is a function of external RG. INA163 SBOS177D www.ti.com 3 TYPICAL CHARACTERISTICS At TA = +25°C, VS = 5V, VCM = 1/2 VS, RL = 25kΩ, CL = 50pF, unless otherwise noted. GAIN vs FREQUENCY THD+N vs FREQUENCY 70 0.1 60 VO = 5Vrms RL = 10kΩ G = 1000 G = 1000 50 G = 100 30 20 0.01 THD+N (%) Gain (dB) 40 G = 10 10 G = 100 0.001 0 G = 10 G=1 −10 G=1 −20 0.0001 10k 100k 1M 10M 20 100 1k Frequency (Hz) NOISE VOLTAGE (RTI) vs FREQUENCY CURRENT NOISE SPECTRAL DENSITY 10 100 Current Noise Density (pA/√Hz) Noise (RTI) (nV/√Hz) 1k G=1 G = 10 10 G = 500 G = 1000 G = 100 1 0.1 1 10 100 1k 10k 1 10 100 Frequency (Hz) 1k 10k Frequency (Hz) COMMON- MODE REJECTION vs FREQUENCY POWER-SUPPLY REJECTION vs FREQUENCY 140 140 G = 1000 Power-Supply Rejection (dB) 120 Input Referred CMR (dB) 10k 20k Frequency (Hz) G = 100 100 G = 10 80 G=1 60 40 20 0 120 G = 100, 1000 G = 10 100 G=1 80 60 40 20 0 10 100 1k 10k 100k 1M 1 Frequency (Hz) 10 100 1k 10k 100k 1M Frequency (Hz) INA163 4 www.ti.com SBOS177D TYPICAL CHARACTERISTICS (Cont.) At TA = +25°C, VS = 5V, VCM = 1/2 VS, RL = 25kΩ, CL = 50pF, unless otherwise noted. OUTPUT VOLTAGE SWING vs OUTPUT CURRENT SETTLING TIME vs GAIN V+ 10 20V Step 8 (V+) − 4 Settling Time (µs) Output Voltage to Rail (V) (V+) − 2 (V+) − 6 (V−) + 6 (V−) + 4 0.01% 6 4 2 (V−) + 2 0.1% 0 V− 10 20 30 40 50 60 1 10 100 Gain SMALL-SIGNAL TRANSIENT RESPONSE (G = 1) SMALL-SIGNAL TRANSIENT RESPONSE (G = 100) 1000 20mV/div Output Current (mA) 20mV/div 0 LARGE-SIGNAL TRANSIENT RESPONSE (G = 1) LARGE-SIGNAL TRANSIENT RESPONSE (G = 100) 5V/div 10µs/div 5V/div 2.5µs/div 2.5µs/div 2.5µs/div INA163 SBOS177D www.ti.com 5 APPLICATIONS INFORMATION temperature drift. These effects can be inferred from the gain equation. Make a short, direct connection to the gain set resistor, RG. Avoid running output signals near these sensitive input nodes. Figure 1 shows the basic connections required for operation. Power supplies should be bypassed with 0.1µF tantalum capacitors near the device pins. The output Sense (pin 8) and output Reference (pin 10) should be low-impedance connections. Resistance of a few ohms in series with these connections will degrade the common-mode rejection of the INA163. NOISE PERFORMANCE The INA163 provides very low-noise with low-source impedance. Its 1nV/√Hz voltage noise delivers neartheoretical noise performance with a source impedance of 200Ω. The input stage design used to achieve this low noise, results in relatively high input bias current and input bias current noise. As a result, the INA163 may not provide the best noise performance with a source impedance greater than 10kΩ. For source impedance greater than 10kΩ, other instrumentation amplifiers may provide improved noise performance. GAIN-SET RESISTOR Gain is set with an external resistor, RG, as shown in Figure 1. The two internal 3kΩ feedback resistors are laser-trimmed to 3kΩ within approximately ±0.2%. Gain is: G = 1+ 6000 RG The temperature coefficient of the internal 3kΩ resistors is approximately ±25ppm/°C. Accuracy and TCR of the external RG will also contribute to gain error and V+ 0.1µF 1 VIN− 4 11 INA163 6kΩ 6kΩ A1 3 Sense 8 3kΩ A3 RG 9 3kΩ VO G=1+ 12 VIN+ 6kΩ 6kΩ Ref A2 10 5 14 6 0.1µF V− V+ RG 6000 RG GAIN (V/V) (dB) 1 0 2 6 5 14 10 20 20 26 50 34 100 40 200 46 500 54 1000 60 2000 66 RG (Ω) NC(1) 6000 1500 667 316 122 61 30 12 6 3 NOTE: (1) NC = No Connection. Sometimes Shown in Simplified Form: INA163 VO V− FIGURE 1. Basic Circuit Connections. INA163 6 www.ti.com SBOS177D INPUT CONSIDERATIONS OFFSET VOLTAGE TRIM Very low source impedance (less than 10Ω) can cause the INA163 to oscillate. This depends on circuit layout, signal source, and input cable characteristics. An input network consisting of a small inductor and resistor, as shown in Figure 2, can greatly reduce any tendency to oscillate. This is especially useful if a variety of input sources are to be connected to the INA163. Although not shown in other figures, this network can be used as needed with all applications shown. A variable voltage applied to pin 10, as shown in Figure 3, can be used to adjust the output offset voltage. A voltage applied to pin 10 is summed with the output signal. An op amp connected as a buffer is used to provide a low impedance at pin 10 to assure good common-mode rejection. V+ 47Ω 11 VIN− 1.2µH 8 INA163 12 VIN+ 6 An output sense terminal allows greater gain accuracy in driving the load. By connecting the sense connection at the load, I • R voltage loss to the load is included inside the feedback loop. Current drive can be increased by connecting a buffer amp inside the feedback loop, as shown in Figure 4. 4 3 1.2µH OUTPUT SENSE VO 9 10 +15V 5 47Ω V− 4 11 Sense FIGURE 2. Input Stabilization Network. INA163 9 10 5 V+ 4 12 5 BW 6 −15V 8 INA163 RG VO BUF634 BUF634 connected for wide bandwidth. 11 3 ±250mA Output Drive 8 VO 9 V+ 10 6 100µA FIGURE 4. Buffer for Increase Output Current. V− 150Ω OPA237 10kΩ 150Ω 100µA V− FIGURE 3. Offset Voltage Adjustment Circuit. INA163 SBOS177D www.ti.com 7 Phantom Power +48V R3 47k + 47 F +15V R1 6.8k 0.1 F R2 6.8k 1N4148 C1(1) 47 F 60V + 1 Female XLR Connector R6(2) 5 3 2 A1 INA163 C2(1) 47 F 60V + 9 VO 10 1M R7(3) 1k R4 2.2k 8 R5 2.2k 0.1 F 0.1 F 1N4148 A2 OPA134 NOTES: (1) Use non-polar capacitors if phantom power is to be turned off. (2) R6 sets maximum gain. (3) R7 sets minimum gain. 15V 15V Optional DC Output Control Loop FIGURE 5. Phantom-Powered Microphone Preamplifier. MICROPHONE AMPLIFIER Figure 5 shows a typical circuit for a professional microphone input amplifier. R1 and R2 provide a current path for conventional 48V phantom power source for a remotely located microphone. An optional switch allows phantom power to be disabled. C1 and C2 block the phantom power voltage from the INA163 input circuitry. Non-polarized capacitors should be used for C1 and C2 if phantom power is to be disabled. For additional input protection against ESD and hot-plugging, four INA4148 diodes may be connected from the input to supply lines. R4 and R5 provide a path for input bias current of the INA163. Input offset current (typically 100nA) creates a DC differential input voltage that will produce an output offset voltage. This is generally the dominant source of output offset voltage in this application. With a maximum gain of 1000 (60dB), the output offset voltage can be several volts. This may be entirely acceptable if the output is AC-coupled into the subsequent stage. An alternate technique is shown in Figure 5. An inexpensive FET-input op amp in a feedback loop drives the DC output voltage to 0V. A2 is not in the audio signal path and does not affect signal quality. Gain is set with a variable resistor, R7, in series with R6. R6 determines the maximum gain. The total resistance, R6 + R7, determines the lowest gain. A special reverse-log taper potentiometer for R7 can be used to create a linear change (in dB) with rotation. INA163 8 www.ti.com SBOS177D PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) INA163UA ACTIVE SOIC D 14 50 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 85 INA163UA INA163UA/2K5 ACTIVE SOIC D 14 2500 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 85 INA163UA INA163UA/2K5E4 ACTIVE SOIC D 14 2500 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 85 INA163UA INA163UAE4 ACTIVE SOIC D 14 50 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 85 INA163UA (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of