INA186A2QDCKRQ1

INA186A2QDCKRQ1

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    SC-70-6

  • 描述:

    INA186-Q1 符合 AEC-Q100 标准且具有皮安级输入偏置电流和使能引脚的 40V 双向高精度电流检测放大器

  • 数据手册
  • 价格&库存
INA186A2QDCKRQ1 数据手册
Product Folder Order Now Support & Community Tools & Software Technical Documents INA186-Q1 SBOS386A – MAY 2019 – REVISED MAY 2020 INA186-Q1 Automotive, 40-V Current Sense Amplifier for Cost-Sensitive Systems 1 Features 3 Description • The INA186-Q1 is an automotive, low-power, voltageoutput, current-sense amplifier (also called a currentshunt monitor). This device is commonly used for monitoring systems directly connected to an automotive 12-V battery. The INA186-Q1 can sense drops across shunts at common-mode voltages from –0.2 V to +40 V, independent of the supply voltage. In addition, the input pins have an absolute maximum voltage of 42V. 1 • • • • • • • AEC-Q100 qualified for automotive applications: – Temperature grade 1: –40°C to +125°C, TA Functional Safety-Capable – Documentation available to aid functional safety system design Wide common-mode voltage range, VCM: –0.2 V to +40 V with survivability up to 42 V (recommended for automotive 12-V battery applications) Low input bias currents, IIB: 500 pA (typical) Low power: – Low supply voltage, VS: 1.7 V to 5.5 V – Low quiescent current, IQ: 48 µA (typical) Accuracy: – Common-mode rejection ratio: 120 dB (minimum) – Gain error, EG: ±1% (maximum) – Gain drift: 10 ppm/°C (maximum) – Offset voltage, VOS: ±50 μV (maximum) – Offset drift: 0.5 μV/°C (maximum) Bidirectional current sensing capability Gain options: – INA186A1-Q1: 25 V/V – INA186A2-Q1: 50 V/V – INA186A3-Q1: 100 V/V – INA186A4-Q1: 200 V/V – INA186A5-Q1: 500 V/V 2 Applications • • • • • Body control module (BCM) Telematics control unit Emergency call (eCall) 12-V battery management system (BMS) Automotive head unit The low input bias current of the INA186-Q1 permits the use of larger current-sense resistors, thus providing accurate current measurements in the microamp range. The low offset voltage of the zerodrift architecture extends the dynamic range of the current measurement. This feature allows for smaller sense resistors with lower power loss, while still providing accurate current measurements. The INA186-Q1 operates from a single 1.7-V to 5.5-V power supply, and draws a maximum of 90 μA of supply current. Five fixed gain options are available: 25 V/V, 50 V/V, 100 V/V, 200 V/V, or 500 V/V. The device is specified over the operating temperature range of –40°C to +125°C, and offered in SC70, and SOT-23 packages. The SC70 package supports bidirectional current measurement, whereas the SOT23 (DBV) only supports current measurement in one direction. Device Information(1) PART NUMBER INA186-Q1 PACKAGE BODY SIZE (NOM) SC70 (6) 2.00 mm × 1.25 mm SOT-23 (5) 3.00 mm × 1.60 mm (1) For all available packages, see the package option addendum at the end of the datasheet. Typical Application Supply Voltage 1.7 V to 5.5 V Bus Voltage ±0.2 V to +40 V RSENSE CBYPASS 0.1 …F LOAD 0.5 nA (typ) 0.5 nA (typ) VS IN± INA186-Q1 OUT ADC Microcontroller IN+ GND REF (1) The REF pin is available only in the SC70 package 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. INA186-Q1 SBOS386A – MAY 2019 – REVISED MAY 2020 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 4 4 4 4 5 6 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Typical Characteristics .............................................. Detailed Description ............................................ 10 7.1 Overview ................................................................. 10 7.2 Functional Block Diagram ....................................... 10 7.3 Feature Description................................................. 11 7.4 Device Functional Modes........................................ 13 8 Application and Implementation ........................ 17 8.1 Application Information............................................ 17 8.2 Typical Applications ................................................ 22 9 Power Supply Recommendations...................... 24 10 Layout................................................................... 24 10.1 Layout Guidelines ................................................. 24 10.2 Layout Examples................................................... 24 11 Device and Documentation Support ................. 26 11.1 11.2 11.3 11.4 11.5 11.6 Documentation Support ........................................ Receiving Notification of Documentation Updates Support Resources ............................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 26 26 26 26 26 26 12 Mechanical, Packaging, and Orderable Information ........................................................... 26 4 Revision History Changes from Original (May 2019) to Revision A Page • Added Functional Safety-Capable information ....................................................................................................................... 1 • Added DBV (SOT-23) package and associated content to data sheet ................................................................................. 1 2 Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Product Folder Links: INA186-Q1 INA186-Q1 www.ti.com SBOS386A – MAY 2019 – REVISED MAY 2020 5 Pin Configuration and Functions DCK Package 6-Pin SC70 Top View REF 1 6 OUT GND 2 5 IN± VS 3 4 IN+ Not to scale DBV Package 5-Pin SOT23 Top View GND 1 OUT 2 VS 3 5 IN+ 4 IN- TI Device Table 1. Pin Functions PIN NAME TYPE DESCRIPTION DBV DCK ENABLE — — Digital input Enable Pin. When this pin is driven to VS, the device is on and functions as a current sense amplifier. When this pin is driven to GND, the device is off, the supply current is reduced, and the output is placed in a high-impedance state. This pin must be driven externally, or connected to VS if not used. GND 1 2 Analog Ground IN– 4 5 Analog input Current-sense amplifier negative input. For high-side applications, connect to load side of sense resistor. For low-side applications, connect to ground side of sense resistor. IN+ 5 4 Analog input Current-sense amplifier positive input. For high-side applications, connect to bus voltage side of sense resistor. For low-side applications, connect to load side of sense resistor. NC — — — OUT 2 6 Analog output OUT pin. This pin provides an analog voltage output that is the gained up voltage difference from the IN+ to the IN– pins, and is offset by the voltage applied to the REF pin. REF — 1 Analog input Reference input. Enables bidirectional current sensing with an externally applied voltage. VS 3 3 Analog Power supply, 1.7 V to 5.5 V No internal connection. Can be left floating, grounded, or connected to supply. Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Product Folder Links: INA186-Q1 3 INA186-Q1 SBOS386A – MAY 2019 – REVISED MAY 2020 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN VS MAX Supply voltage 6 Differential (VIN+) – (VIN–) (2) VIN+, VIN– Analog inputs VENABLE VIN+, VIN–, with respect to GND (3) –42 42 GND – 0.3 42 ENABLE GND – 0.3 6 REF, OUT (3) GND – 0.3 (VS) + 0.3 Input current into any pin (3) TA Operating temperature TJ Junction temperature Tstg Storage temperature (1) (2) (3) –55 –65 UNIT V V V V 5 mA 150 °C 150 °C 150 °C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively. Input voltage at any pin may exceed the voltage shown if the current at that pin is limited to 5 mA. 6.2 ESD Ratings VALUE V(ESD) (1) Electrostatic discharge Human-body model (HBM), per AEC Q100-002 (1) HBM ESD Classification Level 2 ±3000 Charged-device model (CDM), per AEC Q100-011 CDM ESD Classification Level C6 ±1000 UNIT V AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VCM Common-mode input range GND – 0.2 40 V VIN+, VIN– Input pin voltage range GND – 0.2 40 V VS Operating supply voltage 1.7 5.5 V VREF Reference pin voltage range GND VS V TA Operating free-air temperature –40 125 °C 6.4 Thermal Information INA186-Q1 THERMAL METRIC (1) DBV (SOT23) DCK (SC70) UNIT 5 PINS 6 PINS RqJA Junction-to-ambient thermal resistance 176.3 170.7 °C/W RqJC(top) Junction-to-case (top) thermal resistance 105.6 132.7 °C/W RqJB Junction-to-board thermal resistance 66.4 65.3 °C/W YJT Junction-to-top characterization parameter 43.9 45.7 °C/W YJB Junction-to-board characterization parameter 66.1 65.2 °C/W RqJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A °C/W (1) 4 For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Product Folder Links: INA186-Q1 INA186-Q1 www.ti.com SBOS386A – MAY 2019 – REVISED MAY 2020 6.5 Electrical Characteristics at TA = 25°C, VSENSE = VIN+ – VIN–, VS = 1.8 V to 5.0 V, VIN+ = 12 V, and VREF = VS / 2 (unless otherwise noted) PARAMETER CONDITIONS MIN TYP VSENSE = 0 mV, VIN+ = –0.1 V to 40 V, TA = –40°C to +125°C 120 150 MAX UNIT INPUT CMRR Common-mode rejection ratio (1) VOS Offset voltage, RTI dVOS/dT Offset drift, RTI VS = 1.8 V, VSENSE = 0 mV VSENSE = 0 mV, TA = –40°C to +125°C PSRR Power-supply rejection ratio, RTI VSENSE = 0 mV, VS = 1.7 V to 5.5 V IIB Input bias current IIO Input offset current dB –3 ±50 µV 0.05 0.5 µV/°C –1 ±10 µV/V VSENSE = 0 mV 0.5 3 VSENSE = 0 mV ±0.07 nA nA OUTPUT G Gain A1 devices 25 A2 devices 50 A3 devices 100 A4 devices 200 A5 devices EG RVRR V/V 500 Gain error VOUT = 0.1 V to VS – 0.1 V Gain error drift TA = –40°C to +125°C Nonlinearity error VOUT = 0.1 V to VS – 0.1 V Reference voltage rejection ratio VREF = 100 mV to VS – 100 mV, TA = –40°C to +125°C Maximum capacitive load No sustained oscillation –0.04% ±1% 2 10 ppm/°C ±10 µV/V ±0.01% ±2 1 nF VOLTAGE OUTPUT VSP Swing to VS powersupply rail VS = 1.8 V, RL = 10 kΩ to GND, TA = –40°C to +125°C (VS) – 20 (VS) – 40 mV VSN Swing to GND VS = 1.8 V, RL = 10 kΩ to GND, TA = –40°C to +125°C, VSENSE = –10 mV, VREF = 0 V (VGND) + 0.05 (VGND) + 1 mV VZL Zero current output voltage VS = 1.8 V, RL = 10 kΩ to GND, TA = –40°C to +125°C, VSENSE = 0 mV, VREF = 0 V (VGND) + 2 (VGND) + 10 mV FREQUENCY RESPONSE BW Bandwidth A1 devices, CLOAD = 10 pF 45 A2 devices, CLOAD = 10 pF 37 A3 devices, CLOAD = 10 pF 35 A4 devices, CLOAD = 10 pF 33 kHz A5 devices, CLOAD = 10 pF 27 SR Slew rate VS = 5.0 V, VOUT = 0.5 V to 4.5 V 0.3 V/µs tS Settling time From current step to within 1% of final value 30 µs 75 nV/√Hz NOISE, RTI (1) Voltage noise density ENABLE 0 V ≤ VENABLE ≤ VS IEN Leakage input current 100 nA VIH High-level input voltage 0.7 × VS 1 6 V VIL Low-level input voltage 0 0.3 × VS VHYS Hysteresis IODIS Output leakage disabled 300 VS = 5.0 V, VOUT = 0 V to 5.0 V, VENABLE = 0 V V mV 1 5 µA 48 65 µA 90 µA 100 nA POWER SUPPLY IQ Quiescent current IQDIS Quiescent current disabled (1) VS = 1.8 V, VSENSE = 0 mV VS = 1.8 V, VSENSE = 0 mV, TA = –40°C to +125°C VENABLE = 0 V, VSENSE = 0 mV 10 RTI = referred-to-input. Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Product Folder Links: INA186-Q1 5 INA186-Q1 SBOS386A – MAY 2019 – REVISED MAY 2020 www.ti.com 6.6 Typical Characteristics at TA = 25°C, VSENSE = VIN+ – VIN-, VS = 1.8 V to 5.0 V, VIN+ = 12 V, VREF = VS / 2, and for all gain options (unless otherwise noted) 60 Power-Supply Rejection Ratio (dB) 140 50 Gain (dB) 40 30 20 10 A1 A2 A3 A4 A5 0 -10 -20 10 100 1k 10k Frequency (Hz) 100k 120 100 80 60 40 20 0 10 1M 100 1k 10k Frequency (Hz) D019 VS = 5 V D020 Figure 2. Power-Supply Rejection Ratio vs Frequency Vs 160 140 -40°C 25°C 125°C Vs-0.4 100 80 Vs-0.8 Y 120 Output Swing (V) Common-Mode Rejection Ratio (dB) 1M VS = 5 V Figure 1. Gain vs Frequency GND+0.8 GND+0.4 60 GND 40 10 100 1k 10k Frequency (Hz) 100k 0 1M 1 2 3 D021 4 5 6 7 Output Current (mA) 8 9 10 11 D010 VS = 1.8 V A3 devices Figure 4. Output Voltage Swing vs Output Current Figure 3. Common-Mode Rejection Ratio vs Frequency Vs 0.25 -40°C 25°C 125°C 0.2 0.15 Input Bias Current (nA) Vs-1 Vs-2 Y Output Swing (V) 100k GND+2 0.1 0.05 0 -0.05 -0.1 -0.15 GND+1 -0.2 GND 0 5 10 15 20 25 Output Current (mA) 30 35 -0.25 0 D009 VS = 5.0 V 10 15 20 25 30 Common-Mode Voltage (V) 35 40 D024 VS = 5.0 V Figure 5. Output Voltage Swing vs Output Current 6 5 Figure 6. Input Bias Current vs Common-Mode Voltage Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Product Folder Links: INA186-Q1 INA186-Q1 www.ti.com SBOS386A – MAY 2019 – REVISED MAY 2020 Typical Characteristics (continued) at TA = 25°C, VSENSE = VIN+ – VIN-, VS = 1.8 V to 5.0 V, VIN+ = 12 V, VREF = VS / 2, and for all gain options (unless otherwise noted) 0.25 80 0.2 75 Quiescent Current (PA) Input Bias Current (nA) 0.15 0.1 0.05 0 -0.05 -0.1 -0.15 -0.2 70 VS = 1.8 V VS = 3.3 V VS = 5 V 65 60 55 50 45 40 -0.25 0 5 10 15 20 25 30 Common-Mode Voltage (V) 35 35 -50 40 -25 0 D025 25 50 75 Temperature (qC) 100 125 150 D027 VENABLE = 0 V Figure 7. Input Bias Current vs Common-Mode Voltage (Shutdown) Figure 8. Quiescent Current vs Temperature (Enabled) 240 180 VS = 1.8 V VS = 5 V 65 Quiescent Current (PA) Quiescent Current (nA) 210 70 VS = 1.8 V VS = 3.3 V VS = 5.0 V 150 120 90 60 30 60 55 50 45 0 -30 -50 -25 0 25 50 75 Temperature (qC) 100 125 150 40 -5 0 D002 VENABLE = 0 V 5 10 15 20 25 30 Common-Mode Voltage (V) 35 40 D029 VS = 5.0 V Figure 9. Quiescent Current vs Temperature (Disabled) Figure 10. Quiescent Current vs Common Mode Voltage 80 70 60 Referred-to-Input Voltage Noise (0.5 PV/div) Input-Referred Voltage Noise (nV/—Hz) 100 50 40 30 20 10 10 100 1k Frequency (Hz) 10k Time (1 s/div) 100k D031 D030 A3 devices A3 devices Figure 11. Input-Referred Voltage Noise vs Frequency Figure 12. 0.1-Hz to 10-Hz Voltage Noise (Referred-To-Input) Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Product Folder Links: INA186-Q1 7 INA186-Q1 SBOS386A – MAY 2019 – REVISED MAY 2020 www.ti.com Typical Characteristics (continued) VCM VOUT VOUT (100mV/div) Input Voltage 5 mV/div Common-Mode Voltage (10 V/div) Output Voltage 500 mV/div at TA = 25°C, VSENSE = VIN+ – VIN-, VS = 1.8 V to 5.0 V, VIN+ = 12 V, VREF = VS / 2, and for all gain options (unless otherwise noted) Time (20 Ps/div) Time (250 Ps/div) D032 D033 VS = 5.0 V, A3 devices A3 devices Figure 13. Step Response (10-mVPP Input Step) Figure 14. Common-Mode Voltage Transient Response Non-inverting Input Output Voltage (2 V/div) Voltage (2 V/div) Inverting Input Output 0V 0V Time (250 Ps/div) Time (250 Ps/div) D035 D034 A3 devices VS = 5.0 V, A3 devices Figure 15. Inverting Differential Input Overload Figure 16. Noninverting Differential Input Overload Voltage (1 V/div) Supply Voltage Output Voltage Voltage (1V/div) Supply Voltage Output Voltage 0V 0V Time (10 Ps/div) Time (100 Ps/div) D036 VS = 5.0 V, A3 devices Figure 17. Start-Up Response 8 D037 VS = 5.0 V, A3 devices Figure 18. Brownout Recovery Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Product Folder Links: INA186-Q1 INA186-Q1 www.ti.com SBOS386A – MAY 2019 – REVISED MAY 2020 Typical Characteristics (continued) at TA = 25°C, VSENSE = VIN+ – VIN-, VS = 1.8 V to 5.0 V, VIN+ = 12 V, VREF = VS / 2, and for all gain options (unless otherwise noted) 100 Enable Output IBP IBN 80 Voltage (1 V/div) Input Bias Current (nA) 60 40 20 0 -20 -40 -60 0V -80 -100 -110 -90 Time (250 Ps/div) -70 D038 VS = 5.0 V, A3 devices 70 90 110 D039 VS = 5.0 V, VREF = 2.5 V, A1 devices Figure 19. Enable and Disable Response Figure 20. IB+ and IB– vs Differential Input Voltage 25 1.25 IBP IBN -40qC 25qC 125qC Output Leakage Current (PA) 1 15 Input Bias Current (nA) -50 -30 -10 10 30 50 Differential Input Voltage (mV) 5 -5 -15 0.75 0.5 0.25 0 -0.25 -0.5 -0.75 -25 -60 -1 -40 -20 0 20 Differential Input Voltage (mV) 40 60 0 VS = 5.0 V, VREF = 2.5 V, A2, A3, A4, A5 devices 1 1.5 2 2.5 3 3.5 Output Voltage (V) 4 4.5 5 D040 VS = 5.0 V, VENABLE = 0 V, VREF = 2.5 V Figure 21. IB+ and IB– vs Differential Input Voltage Figure 22. Output Leakage vs Output Voltage (A1, A2, and A3 Devices) 5000 3 25qC -40qC 125qC 2.5 2 A5 1000 Output Impedance (:) Output Leakage Current (PA) 0.5 D047 1.5 1 0.5 0 -0.5 -1 A4 A1 100 A2 A3 10 Gain Variants A1 A2 A3 A4 A5 1 -1.5 -2 -2.5 0 0.5 1 1.5 2 2.5 3 3.5 Output Voltage (V) 4 4.5 5 0.1 10 100 D048 10k 100k Frequency (Hz) 1M 10M D050 VS = 5.0 V, VCM = 0 V VS = 5.0 V, VENABLE = 0 V, VREF = 2.5 V Figure 23. Output Leakage vs Output Voltage (A4 and A5 Devices) 1k Figure 24. Output Impedance vs Frequency Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Product Folder Links: INA186-Q1 9 INA186-Q1 SBOS386A – MAY 2019 – REVISED MAY 2020 www.ti.com 7 Detailed Description 7.1 Overview The INA186-Q1 is a low bias current, low offset, 40-V common-mode, current-sensing amplifier. The INA186-Q1 is a specially designed, current-sensing amplifier that accurately measures voltages developed across currentsensing resistors on common-mode voltages that far exceed the supply voltage. Current is measured on input voltage rails as high as 40 V at VIN+ and VIN–, with a supply voltage, VS, as low as 1.7 V. When disabled, the output goes to a high-impedance state, and the supply current draw is reduced to less than 0.1 µA. The INA186Q1 is intended for use in both low-side and high-side current-sensing configurations where high accuracy and low current consumption are required. 7.2 Functional Block Diagram VS INA186-Q1 IN+ + ± ± OUT ± + + REF(1) IN± GND (1) 10 The REF pin is available only in the SC70 package. Devices without a REF pin have this node connected to GND internally. Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Product Folder Links: INA186-Q1 INA186-Q1 www.ti.com SBOS386A – MAY 2019 – REVISED MAY 2020 7.3 Feature Description 7.3.1 Precision Current Measurement The INA186-Q1 allows for accurate current measurements over a wide dynamic range. The high accuracy of the device is attributable to the low gain error and offset specifications. The offset voltage of the INA186-Q1 is less than ±50 µV. In this case, the low offset improves the accuracy at light loads when VIN+ approaches VIN–. Another advantage of low offset is the ability to use a lower-value shunt resistor that reduces the power loss in the current-sense circuit, and improves the power efficiency of the end application. The maximum gain error of the INA186-Q1 is specified at ±1%. As the sensed voltage becomes much larger than the offset voltage, the gain error becomes the dominant source of error in the current-sense measurement. When the device monitors currents near the full-scale output range, the total measurement error approaches the value of the gain error. 7.3.2 Low Input Bias Current The INA186-Q1 is different from many current-sense amplifiers because this device offers very low input bias current. The low input bias current of the INA186-Q1 has three primary benefits. The first benefit is the reduction of the current consumed by the device. Classical current-sense amplifier topologies typically consume tens of microamps of current at the inputs. For these amplifiers, the input current is the result of the resistor network that sets the gain and additional current to bias the input amplifier. To reduce the bias current to near zero, the INA186-Q1 uses a capacitively coupled amplifier on the input stage, followed by a difference amplifier on the output stage. The second benefit of low bias current is the ability to use input filters to reject high-frequency noise before the signal is amplified. In a traditional current-sense amplifier, the addition of input filters comes at the cost of reduced accuracy. However, as a result of the low bias currents, input filters have little effect on the measurement accuracy of the INA186-Q1. The third benefit of low bias current is the ability to use a larger current-sense resistor. This ability allows the device to accurately monitor currents as low as 1 µA. 7.3.3 Low Quiescent Current With Output Enable The device features low quiescent current (IQ), while still providing sufficient small-signal bandwidth to be usable in most applications. The quiescent current of the INA186-Q1 is only 48 µA (typ), while providing a small-signal bandwidth of 35 kHz in a gain of 100. The low IQ and good bandwidth allow the device to be used in many portable electronic systems without excessive drain on the battery. Because many applications only need to periodically monitor current, the INA186-Q1 features an enable pin that turns off the device until needed. When in the disabled state, the INA186-Q1 typically draws 10 nA of total supply current. 7.3.4 Bidirectional Current Monitoring INA186-Q1 devices that feature a REF pin can sense current flow through a sense resistor in both directions. The bidirectional current-sensing capability is achieved by applying a voltage at the REF pin to offset the output voltage. A positive differential voltage sensed at the inputs results in an output voltage that is greater than the applied reference voltage. Likewise, a negative differential voltage at the inputs results in output voltage that is less than the applied reference voltage. The output voltage of the current-sense amplifier is shown in Equation 1. VOUT I LOAD u RSENSE u GAIN VREF where • • • • ILOAD is the load current to be monitored. RSENSE is the current-sense resistor. GAIN is the gain option of the selected device. VREF is the voltage applied to the REF pin. (1) Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Product Folder Links: INA186-Q1 11 INA186-Q1 SBOS386A – MAY 2019 – REVISED MAY 2020 www.ti.com Feature Description (continued) 7.3.5 High-Side and Low-Side Current Sensing The INA186-Q1 supports input common-mode voltages from –0.2 V to +40 V. Because of the internal topology, the common-mode range is not restricted by the power-supply voltage (VS). The ability to operate with commonmode voltages greater or less than VS allows the INA186-Q1 to be used in high-side and low-side currentsensing applications, as shown in Figure 25. Bus Suppl y up to +40 V IN+ High-Side Se nsing Commo n-mode volta ge (VCM ) is b us-voltage depen dent. R SENS E IN± LOA D IN+ R SENS E Low-Side Se nsing Commo n-mode volta ge (VCM ) is a lwa ys n ear groun d a nd is isolated fro m bus-voltage sp ikes. IN± Figure 25. High-Side and Low-Side Sensing Connections 7.3.6 High Common-Mode Rejection The INA186-Q1 uses a capacitively coupled amplifier on the front end. Therefore, dc common-mode voltages are blocked from downstream circuits, resulting in very high common-mode rejection. Typically, the common-mode rejection of the INA186-Q1 is approximately 150 dB. The ability to reject changes in the dc common-mode voltage allows the INA186-Q1 to monitor both high-voltage and low-voltage rail currents with very little change in the offset voltage. 7.3.7 Rail-to-Rail Output Swing The INA186-Q1 allows linear current-sensing operation with the output close to the supply rail and ground. The maximum specified output swing to the positive rail is VS – 40 mV, and the maximum specified output swing to GND is only GND + 1 mV. The close-to-rail output swing is useful to maximize the usable output range, particularly when operating the device from a 1.8-V supply. 12 Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Product Folder Links: INA186-Q1 INA186-Q1 www.ti.com SBOS386A – MAY 2019 – REVISED MAY 2020 7.4 Device Functional Modes 7.4.1 Normal Operation The INA186-Q1 is in normal operation when the following conditions are met: • The power-supply voltage (VS) is between 1.7 V and 5.5 V. • The common-mode voltage (VCM) is within the specified range of –0.2 V to +40 V. • The maximum differential input signal times the gain plus VREF is less than the positive swing voltage VSP. • The ENABLE pin is driven or connected to VS. • The minimum differential input signal times the gain plus VREF is greater than the zero load swing to GND, VZL (see the Rail-to-Rail Output Swing section). For devices that do not feature a REF pin that value for VREF will be zero. During normal operation, this device produces an output voltage that is the amplified representation of the difference voltage from IN+ to IN– plus the voltage applied to the REF pin. 7.4.2 Unidirectional Mode This device can be configured to monitor current flowing in one direction (unidirectional) or in both directions (bidirectional) depending on how the REF pin is connected. The most common case is unidirectional where the output is set to ground when no current is flowing by connecting the REF pin to ground, as shown in Figure 26. When the current flows from the bus supply to the load, the input voltage from IN+ to IN– increases and causes the output voltage at the OUT pin to increase. Bus Voltage up to 40 V RSENSE Load VS 1.7 V to 5.5 V CBYPASS 0.1 µF ISENSE VS INA186-Q1 IN± Capacitively Coupled Amplifier ± OUT VOUT + REF IN+ GND Figure 26. Typical Unidirectional Application The linear range of the output stage is limited by how close the output voltage can approach ground under zero input conditions. The zero current output voltage of the INA186-Q1 is very small and for most unidirectional applications the REF pin is simply grounded. However, if the measured current multiplied by the current sense resistor and device gain is less than the zero current output voltage, then bias the REF pin to a convenient value above the zero current output voltage to get the output into the linear range of the device. To limit common-mode rejection errors, buffer the reference voltage connected to the REF pin. Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Product Folder Links: INA186-Q1 13 INA186-Q1 SBOS386A – MAY 2019 – REVISED MAY 2020 www.ti.com Device Functional Modes (continued) A less-frequently used output biasing method is to connect the REF pin to the power-supply voltage, VS. This method results in the output voltage saturating at 40 mV less than the supply voltage when no differential input voltage is present. This method is similar to the output saturated low condition with no differential input voltage when the REF pin is connected to ground. The output voltage in this configuration only responds to currents that develop negative differential input voltage relative to the device IN– pin. Under these conditions, when the negative differential input signal increases, the output voltage moves downward from the saturated supply voltage. The voltage applied to the REF pin must not exceed VS. Another use for the REF pin in unidirectional operation is to level shift the output voltage. Figure 27 shows an application where the device ground is set to a negative voltage so currents biased to negative supplies, as seen in optical networking cards, can be measured. The GND of the INA186-Q1 can be set to negative voltages, as long as the inputs do not violate the common-mode range specification and the voltage difference between VS and GND does not exceed 5.5 V. In this example, the output of the INA186-Q1 is fed into a positive-biased analog-to-digital converter (ADC). By grounding the REF pin, the voltages at the output will be positive and not damage the ADC. To make sure the output voltage never goes negative, the supply sequencing must be the positive supply first, followed by the negative supply. + 1.8 V -3.3 V CBYPASS 0.1 µF RSENSE Load VS INA186-Q1 IN- Capacitively Coupled Amplifier ± OUT ADC + REF IN+ GND - 3.3 V Figure 27. Using the REF Pin to Level-Shift Output Voltage 14 Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Product Folder Links: INA186-Q1 INA186-Q1 www.ti.com SBOS386A – MAY 2019 – REVISED MAY 2020 Device Functional Modes (continued) 7.4.3 Bidirectional Mode The INA186-Q1 devices that feature a REF pin are bidirectional current-sense amplifiers capable of measuring currents through a resistive shunt in two directions. This bidirectional monitoring is common in applications that include charging and discharging operations where the current flowing through the resistor can change directions. Bus Voltage up to 40 V VS 1.7 V to 5.5 V RSENSE Load CBYPASS 0.1 µF ISENSE VS INA186-Q1 IN± Reference Voltage Capacitively Coupled Amplifier ± OUT VOUT + REF IN+ GND + ± Figure 28. Bidirectional Application The ability to measure this current flowing in both directions is achieved by applying a voltage to the REF pin, as shown in Figure 28. The voltage applied to REF (VREF) sets the output state that corresponds to the zero-input level state. The output then responds by increasing above VREF for positive differential signals (relative to the IN– pin) and responds by decreasing below VREF for negative differential signals. This reference voltage applied to the REF pin can be set anywhere between 0 V to VS. For bidirectional applications, VREF is typically set at VS/2 for equal signal range in both current directions. In some cases, VREF is set at a voltage other than VS/2; for example, when the bidirectional current and corresponding output signal do not need to be symmetrical. 7.4.4 Input Differential Overload If the differential input voltage (VIN+ – VIN–) times gain exceeds the voltage swing specification, the INA186-Q1 drives its output as close as possible to the positive supply or ground, and does not provide accurate measurement of the differential input voltage. If this input overload occurs during normal circuit operation, then reduce the value of the shunt resistor or use a lower-gain version with the chosen sense resistor to avoid this mode of operation. If a differential overload occurs in a time-limited fault event, then the output of the INA186-Q1 returns to the expected value approximately 80 µs after the fault condition is removed. Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Product Folder Links: INA186-Q1 15 INA186-Q1 SBOS386A – MAY 2019 – REVISED MAY 2020 www.ti.com Device Functional Modes (continued) 7.4.5 Shutdown The INA186-Q1 features an active-high ENABLE pin that shuts down the device when pulled to ground. When the device is shut down, the quiescent current is reduced to 10 nA (typ), and the output goes to a highimpedance state. In a battery-powered application, the low quiescent current extends the battery lifetime when the current measurement is not needed. When the ENABLE pin is driven to the supply voltage, the device turns back on. The typical output settling time when enabled is 130 µs. The output of the INA186-Q1 goes to a high-impedance state when disabled. Therefore, you can connect multiple outputs of the INA186-Q1 together to a single ADC or measurement device, as shown in Figure 29. When connected in this way, enable only one INA186-Q1 at a time, and make sure all devices have the same supply voltage. Bus Voltage1 upto to +40 V RSENSE Supply Voltage 1.7 V to 5.5 V LOAD 0.1 F ENABLE GPIO1 VS IN± INA186 ADC OUT Microcontroller IN+ GPIO2 REF GND Bus Voltage2 upto to +40 V RSENSE Supply Voltage 1.7 V to 5.5 V LOAD 0.1 F ENABLE VS IN± INA186 OUT IN+ GND REF Figure 29. Multiplexing Multiple Devices With the ENABLE Pin 16 Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Product Folder Links: INA186-Q1 INA186-Q1 www.ti.com SBOS386A – MAY 2019 – REVISED MAY 2020 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information The INA186-Q1 amplifies the voltage developed across a current-sensing resistor as current flows through the resistor to the load or ground. The high common-mode rejection of the INA186-Q1 makes it usable over a wide range of voltage rails while still maintaining an accurate current measurement. 8.1.1 Basic Connections Figure 30 shows the basic connections of the INA186-Q1. Place the device as close as possible to the current sense resistor and connect the input pins (IN+ and IN–) to the current sense resistor through kelvin connections. Supply Voltage 1.7 V to 5.5 V Bus Voltage ±0.2 V to +40 V RSENSE CBYPASS 0.1 …F LOAD 0.5 nA (typ) 0.5 nA (typ) VS IN± INA186-Q1 OUT ADC Microcontroller IN+ GND REF (1) The REF pin is available only in the SC70 package NOTE: To help eliminate ground offset errors between the device and the analog-to-digital converter (ADC), connect the REF pin to the ADC reference input. When driving SAR ADCs, filter or buffer the output of the INA186-Q1 before connecting directly to the ADC. Figure 30. Basic Connections Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Product Folder Links: INA186-Q1 17 INA186-Q1 SBOS386A – MAY 2019 – REVISED MAY 2020 www.ti.com Application Information (continued) 8.1.2 RSENSE and Device Gain Selection The accuracy of any current-sense amplifier is maximized by choosing the current-sense resistor to be as large as possible. A large sense resistor maximizes the differential input signal for a given amount of current flow and reduces the error contribution of the offset voltage. However, there are practical limits as to how large the current-sense resistor can be in a given application because of the resistor size and maximum allowable power dissipation. Equation 2 gives the maximum value for the current-sense resistor for a given power dissipation budget: PDMAX RSENSE IMAX2 where: • • PDMAX is the maximum allowable power dissipation in RSENSE. IMAX is the maximum current that will flow through RSENSE. (2) An additional limitation on the size of the current-sense resistor and device gain is due to the power-supply voltage, VS, and device swing-to-rail limitations. In order to make sure that the current-sense signal is properly passed to the output, both positive and negative output swing limitations must be examined. Equation 3 provides the maximum values of RSENSE and GAIN to keep the device from exceeding the positive swing limitation. IMAX u RSENSE u GAIN < VSP VREF where: • • • • IMAX is the maximum current that will flow through RSENSE. GAIN is the gain of the current-sense amplifier. VSP is the positive output swing as specified in the data sheet. VREF is the externally applied voltage on the REF pin. (3) To avoid positive output swing limitations when selecting the value of RSENSE, there is always a trade-off between the value of the sense resistor and the gain of the device under consideration. If the sense resistor selected for the maximum power dissipation is too large, then it is possible to select a lower-gain device in order to avoid positive swing limitations. The negative swing limitation places a limit on how small the sense resistor value can be for a given application. Equation 4 provides the limit on the minimum value of the sense resistor. IMIN u RSENSE u GAIN > VSN VREF where: • • • • IMIN is the minimum current that will flow through RSENSE. GAIN is the gain of the current-sense amplifier. VSN is the negative output swing of the device (see the Rail-to-Rail Output Swing section). VREF is the externally applied voltage on the REF pin. (4) In addition to adjusting RSENSE and the device gain, the voltage applied to the REF pin can be slightly increased above GND to avoid negative swing limitations. 18 Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Product Folder Links: INA186-Q1 INA186-Q1 www.ti.com SBOS386A – MAY 2019 – REVISED MAY 2020 Application Information (continued) 8.1.3 Signal Conditioning When performing accurate current measurements in noisy environments, the current-sensing signal is often filtered. The INA186-Q1 features low input bias currents. Therefore, adding a differential mode filter to the input without sacrificing the current-sense accuracy is possible. Filtering at the input is advantageous because this action attenuates differential noise before the signal is amplified. Figure 31 provides an example of how to use a filter on the input pins of the device. Bus Voltage up to 40 V VS 1.7 V to 5.5 V CBYPASS 0.1 µF RSENSE Load Capacitively Coupled Amplifier IN± RF f3dB 1 4SRFCF CF VS INA186-Q1 ± RDIFF OUT VOUT + RF REF IN+ GND Figure 31. Filter at the Input Pins The differential input impedance (RDIFF) shown in Figure 31 limits the maximum value for RF. The value of RDIFF is a function of the device temperature, as shown in Figure 32. 6 A1 A2, A3, A4, A5 Input Impedance (M:) 5 4 3 2 1 -50 -25 0 25 50 75 Temperature (qC) 100 125 150 D115 Figure 32. Differential Input Impedance vs Temperature Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Product Folder Links: INA186-Q1 19 INA186-Q1 SBOS386A – MAY 2019 – REVISED MAY 2020 www.ti.com Application Information (continued) As the voltage drop across the sense resistor (VSENSE) increases, the amount of voltage dropped across the input filter resistors (RF) also increases. The increased voltage drop results in additional gain error. The error caused by these resistors is calculated by the resistor divider equation shown in Equation 5. Error(%) § RDIFF ¨1 ¨ RSENSE RDIFF © 2 u RF · ¸ u 100 ¸ ¹ where: • • RDIFF is the differential input impedance. RF is the added value of the series filter resistance. (5) The input stage of the INA186-Q1 uses a capacitive feedback amplifier topology in order to achieve high dc precision. As a result, periodic high-frequency shunt voltage (or current) transients of significant amplitude (10 mV or greater) and duration (hundreds of nanoseconds or greater) may be amplified by the INA186-Q1, even though the transients are greater than the device bandwidth. Use a differential input filter in these applications to minimize disturbances at the INA186-Q1 output. The high input impedance and low bias current of the INA186-Q1 provide flexibility in the input filter design without impacting the accuracy of current measurement. For example, set RF = 100 Ω and CF = 22 nF to achieve a low-pass filter corner frequency of 36.2 kHz. These filter values significantly attenuate most unwanted highfrequency signals at the input without severely impacting the current sensing bandwidth or precision. If a lower corner frequency is desired, increase the value of CF. Filtering the input filters out differential noise across the sense resistor. If high-frequency, common-mode noise is a concern, add an RC filter from the OUT pin to ground. The RC filter helps filter out both differential and common mode noise, as well as internally generated noise from the device. The value for the resistance of the RC filter is limited by the impedance of the load. Any current drawn by the load manifests as an external voltage drop from the INA186-Q1 OUT pin to the load input. To select the optimal values for the output filter, use Figure 24 and see the Closed-Loop Analysis of Load-Induced Amplifier Stability Issues Using ZOUT application report 20 Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Product Folder Links: INA186-Q1 INA186-Q1 www.ti.com SBOS386A – MAY 2019 – REVISED MAY 2020 Application Information (continued) 8.1.4 Common-Mode Voltage Transients With a small amount of additional circuitry, the INA186-Q1 can be used in circuits subject to transients that exceed the absolute maximum voltage ratings. The most simple way to protect the inputs from negative transients is to add resistors in series with the IN– and IN+ pins. Use resistors that are 1 kΩ or less, and limit the current in the ESD structures to less than 5 mA. For example, using 1-kΩ resistors in series with the INA186-Q1 allows voltages as low as –5 V, while limiting the ESD current to less than 5 mA. If protection from high-voltage or more-negative, common-voltage transients is needed, use the circuits shown in Figure 33 and Figure 34. When implementing these circuits, use only Zener diodes or Zener-type transient absorbers (sometimes referred to as transzorbs); any other type of transient absorber has an unacceptable time delay. Start by adding a pair of resistors as a working impedance for the Zener diode, as shown in Figure 33. Keep these resistors as small as possible; most often, use around 100 Ω. Larger values can be used with an effect on gain that is discussed in the Signal Conditioning section. This circuit limits only short-term transients; therefore, many applications are satisfied with a 100-Ω resistor along with conventional Zener diodes of the lowest acceptable power rating. This combination uses the least amount of board space. These diodes can be found in packages as small as SOT-523 or SOD-523. Bus Voltage up to 40 V VS 1.7 V to 5.5 V CBYPASS 0.1 µF RSENSE Load VS RPROTECT INA186-Q1 IN± < 1 k: Capacitively Coupled Amplifier ± OUT RPROTECT < 1 k: VOUT + REF IN+ GND Figure 33. Transient Protection Using Dual Zener Diodes In the event that low-power Zener diodes do not have sufficient transient absorption capability, a higher-power transzorb must be used. The most package-efficient solution involves using a single transzorb and back-to-back diodes between the device inputs, as shown in Figure 34. The most space-efficient solutions are dual, seriesconnected diodes in a single SOT-523 or SOD-523 package. In either of the examples shown in Figure 33 and Figure 34, the total board area required by the INA186-Q1 with all protective components is less than that of an SO-8 package, and only slightly greater than that of an VSSOP-8 package. Bus Voltage up to 40 V VS 1.7 V to 5.5 V CBYPASS 0.1 µF RSENSE Load VS RPROTECT INA186-Q1 IN± < 1 k: Capacitively Coupled Amplifier Transorb ± OUT VOUT + RPROTECT < 1 k: REF IN+ GND Figure 34. Transient Protection Using a Single Transzorb and Input Clamps For more information, see the Current Shunt Monitor With Transient Robustness reference design. Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Product Folder Links: INA186-Q1 21 INA186-Q1 SBOS386A – MAY 2019 – REVISED MAY 2020 www.ti.com 8.2 Typical Applications The low input bias current of the INA186-Q1 allows accurate monitoring of small-value currents. To accurately monitor currents in the microamp range, increase the value of the sense resistor to increase the sense voltage so that the error introduced by the offset voltage is small. The circuit configuration for monitoring low-value currents is shown in Figure 35. As a result of the differential input impedance of the INA186-Q1, limit the value of RSENSE to 1 kΩ or less for best accuracy. RSENSE ” 1 kO 12 V 5V LOAD 0.1 F VS IN± OUT INA186-Q1 IN+ REF GND Figure 35. Microamp Current Measurement 8.2.1 Design Requirements The design requirements for the circuit shown in Figure 35 are listed in Table 2. Table 2. Design Parameters 22 DESIGN PARAMETER EXAMPLE VALUE Power-supply voltage (VS) 5V Bus supply rail (VCM) 12 V Minimum sense current (IMIN) 1 µA Maximum sense current (IMAX) 150 µA Device gain (GAIN) 25 V/V Reference voltage (VREF) 0V Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Product Folder Links: INA186-Q1 INA186-Q1 www.ti.com SBOS386A – MAY 2019 – REVISED MAY 2020 8.2.2 Detailed Design Procedure The maximum value of the current-sense resistor is calculated based on choice of gain, value of the maximum current the be sensed (IMAX), and the power supply voltage (VS). When operating at the maximum current, the output voltage must not exceed the positive output swing specification, VSP. Using Equation 6, for the given design parameters the maximum value for RSENSE is calculated to be 1.321 kΩ. VSP RSENSE < IMAX u GAIN (6) However, because this value exceeds the maximum recommended value for RSENSE, a resistance value of 1 kΩ must be used. When operating at the minimum current value, IMIN the output voltage must be greater than the swing to GND (VSN), specification. For this example, the output voltage at the minimum current is calculated using Equation 7 to be 25 mV, which is greater than the value for VSN. VOUTMIN IMIN u RSENSE u GAIN (7) 8.2.3 Application Curve Figure 36 shows the output of the device under the conditions given in Table 2 and with RSENSE = 1 kΩ. 4 3.5 Output Voltage (V) 3 2.5 2 1.5 1 0.5 0 0 25 50 75 100 Input Current (µA) 125 150 D031 Figure 36. Typical Application DC Transfer Function Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Product Folder Links: INA186-Q1 23 INA186-Q1 SBOS386A – MAY 2019 – REVISED MAY 2020 www.ti.com 9 Power Supply Recommendations The input circuitry of the INA186-Q1 accurately measures beyond the power-supply voltage, VS. For example, VS can be 5 V, whereas the bus supply voltage at IN+ and IN– can be as high as 40 V. However, the output voltage range of the OUT pin is limited by the voltage on the VS pin. The INA186-Q1 also withstands the full differential input signal range up to 40 V at the IN+ and IN– input pins, regardless of whether the device has power applied at the VS pin. There is no sequencing requirement for VS and VIN+ or VIN–. 10 Layout 10.1 Layout Guidelines • • • Connect the input pins to the sensing resistor using a Kelvin or 4-wire connection. This connection technique makes sure that only the current-sensing resistor impedance is detected between the input pins. Poor routing of the current-sensing resistor commonly results in additional resistance present between the input pins. Given the very low ohmic value of the current resistor, any additional high-current carrying impedance can cause significant measurement errors. Place the power-supply bypass capacitor as close as possible to the device power supply and ground pins. The recommended value of this bypass capacitor is 0.1 µF. Additional decoupling capacitance can be added to compensate for noisy or high-impedance power supplies. When routing the connections from the current-sense resistor to the device, keep the trace lengths as short as possible. The input filter capacitor CF should be placed as close as possible to the input pins of the device. 10.2 Layout Examples Current Sense Output Connect REF to GND for Unidirectional Measurement or to External Reference for Bidirectional Measurement Note: RF and CF are optional in low noise/ripple environments VIA to Ground Plane Supply Voltage (1.7 V to 5.5 V) REF 1 GND 2 VS 3 INA186-Q1 6 OUT 5 IN- 4 IN+ CF RF RSHUNT CBYPASS RF VIA to Ground Plane Figure 37. Recommended Layout for SC70 (DCK) Package 24 Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Product Folder Links: INA186-Q1 INA186-Q1 www.ti.com SBOS386A – MAY 2019 – REVISED MAY 2020 Layout Examples (continued) Note: RF and CF are optional in low noise/ripple environments CF GND 1 Current Sense Output OUT 2 Supply Voltage (1.7 V to 5.5 V) VS 3 VIA to Ground Plane 5 RF IN+ TI Device RSHUNT 4 IN- CBYPASS RF VIA to Ground Plane Figure 38. Recommended Layout for SOT23-5 (DBV) Package Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Product Folder Links: INA186-Q1 25 INA186-Q1 SBOS386A – MAY 2019 – REVISED MAY 2020 www.ti.com 11 Device and Documentation Support 11.1 Documentation Support 11.1.1 Related Documentation For related documentation see the following: Texas Instruments, INA186EVM user's guide 11.2 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 11.3 Support Resources TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight from the experts. Search existing answers or ask your own question to get the quick design help you need. Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. 11.4 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 11.5 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 11.6 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 26 Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Product Folder Links: INA186-Q1 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) INA186A1QDBVRQ1 ACTIVE SOT-23 DBV 5 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 1ZSY INA186A1QDCKRQ1 ACTIVE SC70 DCK 6 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 1EX INA186A2QDBVRQ1 ACTIVE SOT-23 DBV 5 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 1ZTY INA186A2QDCKRQ1 ACTIVE SC70 DCK 6 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 1EZ INA186A3QDBVRQ1 ACTIVE SOT-23 DBV 5 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 1ZUY INA186A3QDCKRQ1 ACTIVE SC70 DCK 6 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 1F1 INA186A4QDBVRQ1 ACTIVE SOT-23 DBV 5 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 1ZVY INA186A4QDCKRQ1 ACTIVE SC70 DCK 6 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 1F2 INA186A5QDBVRQ1 ACTIVE SOT-23 DBV 5 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 1ZWY INA186A5QDCKRQ1 ACTIVE SC70 DCK 6 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 1F3 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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INA186A2QDCKRQ1
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INA186A2QDCKRQ1
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INA186A2QDCKRQ1
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