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INA186A3IDCKT

INA186A3IDCKT

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    SC-70-6

  • 描述:

    INA186 具有皮安级输入偏置电流和使能引脚的 40V 双向高精度电流检测放大器

  • 数据手册
  • 价格&库存
INA186A3IDCKT 数据手册
INA186 SBOS318B – APRIL 2019 – REVISED JULY 2021 INA186 Bidirectional, Low-Power, Zero-Drift, Wide Dynamic Range, Current-Sense Amplifier With Enable 1 Features 3 Description • The INA186 is a low-power, voltage-output, currentsense amplifier (also called a current-shunt monitor). This device is commonly used for overcurrent protection, precision current measurement for system optimization, or in closed-loop feedback circuits. The INA186 can sense drops across shunts at commonmode voltages from –0.2 V to +40 V, independent of the supply voltage. • • • • • Wide common-mode voltage range, VCM: –0.2 V to +40 V Low input bias currents, IIB: 500 pA (typical) (enables microamp current measurement) Low power: – Low supply voltage, VS: 1.7 V to 5.5 V – Low quiescent current, IQ: 48 µA (typical) Accuracy: – Common-mode rejection ratio: 120 dB (minimum) – Gain error, EG: ±1% (maximum) – Gain drift: 10 ppm/°C (maximum) – Offset voltage, VOS: ±50 μV (maximum) – Offset drift: 0.5 μV/°C (maximum) Bidirectional current sensing capability Gain options: – INA186A1: 25 V/V – INA186A2: 50 V/V – INA186A3: 100 V/V – INA186A4: 200 V/V – INA186A5: 500 V/V The low input bias current of the INA186 permits the use of larger current-sense resistors, thus providing accurate current measurements in the microamp range. The low offset voltage of the zero-drift architecture extends the dynamic range of the current measurement. This feature allows for smaller sense resistors with lower power loss, while still providing accurate current measurements. The INA186 operates from a single 1.7-V to 5.5-V power supply, and draws a maximum of 90 μA of supply current . Five fixed gain options are available: 25 V/V, 50 V/V, 100 V/V, 200 V/V, or 500 V/V. The device is specified over the operating temperature range of –40°C to +125°C, and offered in SC70, SOT-23-THIN, and DSBGA packages. The SC70 and SOT-23 (DDF) packages support bidirectional current measurement, whereas the DSBGA package only supports current measurement in one direction. 2 Applications • • • • • • Standard notebook PC Smartphone Consumer battery charger Baseband unit (BBU) Merchant network and server PSU Battery test Table 3-1. Device Information PART NUMBER INA186 (1) Bus Voltage ±0.2 V to +40 V 0.5 nA (typ) PACKAGE(1) BODY SIZE (NOM) SC70 (6) 2.00 mm × 1.25 mm SOT-23 (8) 2.90 mm × 1.60 mm DSBGA (6) 1.17 mm × 0.765 mm For all available packages, see the package option addendum at the end of the data sheet. Supply Voltage 1.7 V to 5.5 V RSENSE LOAD 0.1 …F 0.5 nA (typ) ENABLE(1) VS IN± INA186 IN+ GND OUT ADC Microcontroller REF(2) (1) The ENABLE pin is available only in the DDF and YFD packages. (2) The REF pin is available only in the DDF and DCK packages. Typical Application An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 Table of Contents 1 Features............................................................................1 2 Applications..................................................................... 1 3 Description.......................................................................1 4 Revision History.............................................................. 2 5 Pin Configuration and Functions...................................3 6 Specifications.................................................................. 4 6.1 Absolute Maximum Ratings ....................................... 4 6.2 ESD Ratings .............................................................. 4 6.3 Recommended Operating Conditions ........................4 6.4 Thermal Information ...................................................4 6.5 Electrical Characteristics ............................................5 6.6 Typical Characteristics................................................ 6 7 Detailed Description...................................................... 11 7.1 Overview................................................................... 11 7.2 Functional Block Diagram......................................... 11 7.3 Feature Description...................................................12 7.4 Device Functional Modes..........................................14 8 Application and Implementation.................................. 18 8.1 Application Information............................................. 18 8.2 Typical Applications.................................................. 23 9 Power Supply Recommendations................................24 10 Layout...........................................................................25 10.1 Layout Guidelines................................................... 25 10.2 Layout Examples.................................................... 25 11 Device and Documentation Support..........................28 11.1 Documentation Support.......................................... 28 11.2 Receiving Notification of Documentation Updates.. 28 11.3 Support Resources................................................. 28 11.4 Trademarks............................................................. 28 11.5 Electrostatic Discharge Caution.............................. 28 11.6 Glossary.................................................................. 28 12 Mechanical, Packaging, and Orderable Information.................................................................... 28 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision A (November 2019) to Revision B (July 2021) Page • Added the YFD (DSBGA) package and associated content to data sheet ........................................................1 • Changed Overview section............................................................................................................................... 11 • Added ENABLE pin information to the Functional Block Diagram ...................................................................11 • Added REF pin information to the Bidirectional Current Monitoring section.....................................................12 • Changed graphics in the Basic Connections section........................................................................................18 • Added REF pin information to the RSENSE and Device Gain Selection section................................................ 19 • Added the YFD (DSBGA) layout example to Layout Examples ...................................................................... 25 Changes from Revision * (April 2019) to Revision A (November 2019) Page • Added DDF (SOT-23) package and associated content to data sheet ..............................................................1 2 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 5 Pin Configuration and Functions REF 1 6 OUT GND 2 5 IN± VS 3 4 IN+ 1 2 3 A IN+ VS OUT B IN± GND ENABLE Not to scale Not to scale Figure 5-1. DCK Package 6-Pin SC70 Top View Figure 5-2. YFD Package 6-Pin DSBGA Top View VS 1 8 IN± ENABLE 2 7 IN+ REF 3 6 NC GND 4 5 OUT Not to scale Figure 5-3. DDF Package 8-Pin SOT-23 Top View Table 5-1. Pin Functions PIN NAME DCK (SC70) DDF (SOT-23) YFD (DSBGA) TYPE DESCRIPTION Enable Pin. When this pin is driven to VS, the device is on and functions as a current sense amplifier. When this pin is driven to GND, the device is off, the supply current is reduced, and the output is placed in a highimpedance state. This pin must be driven externally, or connected to VS if not used. DDF and YFD packages only. ENABLE — 2 B3 Digital input GND 2 4 B2 Analog IN– 5 8 B1 Analog input Current-sense amplifier negative input. For high-side applications, connect to load side of sense resistor. For low-side applications, connect to ground side of sense resistor. IN+ 4 7 A1 Analog input Current-sense amplifier positive input. For high-side applications, connect to bus voltage side of sense resistor. For low-side applications, connect to load side of sense resistor. NC — 6 — — OUT 6 5 A3 REF 1 3 — Analog input VS 3 1 A2 Analog Ground No internal connection. Can be left floating, grounded, or connected to supply. OUT pin. This pin provides an analog voltage output that is the gained up Analog output voltage difference from the IN+ to the IN– pins, and is offset by the voltage applied to the REF pin. Reference input. Enables bidirectional current sensing with an externally applied voltage. DCK and DDF packages only. Devices without a REF pin have the REF node grounded internally. Power supply, 1.7 V to 5.5 V Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 3 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)(1) MIN VS MAX Supply voltage )(2) Differential (VIN+) – (VIN– VIN+, VIN– Analog inputs VENABLE VIN+, VIN–, with respect to GND(3) –42 42 GND – 0.3 42 ENABLE GND – 0.3 6 REF, OUT(3) GND – 0.3 (VS) + 0.3 Input current into any pin(3) TA Operating temperature TJ Junction temperature Tstg Storage temperature (1) (2) (3) UNIT 6 –55 –65 V V V V 5 mA 150 °C 150 °C 150 °C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively. Input voltage at any pin may exceed the voltage shown if the current at that pin is limited to 5 mA. 6.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±3000 Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VCM Common-mode input range GND – 0.2 40 V VIN+, VIN– Input pin voltage range GND – 0.2 40 V VS Operating supply voltage 1.7 5.5 V VREF Reference pin voltage range GND VS V TA Operating free-air temperature –40 125 °C 6.4 Thermal Information INA186 THERMAL UNIT YFD (DSBGA) DCK (SC70) DDF (SOT23) 6 PINS 6 PINS 8 PINS 141.4 170.7 137.2 °C/W RθJC(top) Junction-to-case (top) thermal resistance 1.1 132.7 38.4 °C/W RθJB Junction-to-board thermal resistance 45.7 65.3 57.1 °C/W ΨJT Junction-to-top characterization parameter 0.4 45.7 5.1 °C/W ΨJB Junction-to-board characterization parameter 45.3 65.2 56.6 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A N/A °C/W RθJA (1) 4 METRIC(1) Junction-to-ambient thermal resistance For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 6.5 Electrical Characteristics at TA = 25°C, VSENSE = VIN+ – VIN–, VS = 1.8 V to 5.0 V, VIN+ = 12 V, VREF = VS / 2, and VENABLE = VS (unless otherwise noted) PARAMETER CONDITIONS MIN TYP MAX UNIT 120 150 –3 ±50 µV 0.05 0.5 µV/°C –1 ±10 µV/V 3 INPUT CMRR Common-mode rejection ratio VSENSE = 0 mV, VIN+ = –0.1 V to 40 V, TA = –40°C to +125°C VOS Offset voltage, RTI(1) VS = 1.8 V, VSENSE = 0 mV dVOS/dT Offset drift, RTI VSENSE = 0 mV, TA = –40°C to +125°C PSRR Power-supply rejection ratio, RTI VSENSE = 0 mV, VS = 1.7 V to 5.5 V IIB Input bias current VSENSE = 0 mV 0.5 IIO Input offset current VSENSE = 0 mV ±0.07 dB nA nA OUTPUT G Gain A1 devices 25 A2 devices 50 A3 devices 100 A4 devices 200 A5 devices EG RVRR V/V 500 Gain error VOUT = 0.1 V to VS – 0.1 V Gain error drift TA = –40°C to +125°C Nonlinearity error VOUT = 0.1 V to VS – 0.1 V Reference voltage rejection ratio VREF = 100 mV to VS – 100 mV, TA = –40°C to +125°C Maximum capacitive load No sustained oscillation –0.04% 2 ±1% 10 ppm/°C ±0.01% ±2 ±10 1 µV/V nF VOLTAGE OUTPUT VSP Swing to VS power-supply rail VS = 1.8 V, RL = 10 kΩ to GND, TA = –40°C to +125°C (VS) – 20 (VS) – 40 mV VSN Swing to GND VS = 1.8 V, RL = 10 kΩ to GND, TA = –40°C to +125°C, VSENSE = –10 mV, VREF = 0 V (VGND) + 0.05 (VGND) + 1 mV VZL Zero current output voltage VS = 1.8 V, RL = 10 kΩ to GND, TA = –40°C to +125°C, VSENSE = 0 mV, VREF = 0 V (VGND) + 2 (VGND) + 10 mV FREQUENCY RESPONSE BW Bandwidth A1 devices, CLOAD = 10 pF 45 A2 devices, CLOAD = 10 pF 37 A3 devices, CLOAD = 10 pF 35 A4 devices, CLOAD = 10 pF 33 kHz A5 devices, CLOAD = 10 pF 27 SR Slew rate VS = 5.0 V, VOUT = 0.5 V to 4.5 V 0.3 V/µs tS Settling time From current step to within 1% of final value 30 µs 75 nV/√Hz NOISE, RTI(1) Voltage noise density ENABLE IEN Leakage input current VIH High-level input voltage VIL Low-level input voltage VHYS Hysteresis VIH High-level input voltage VIL Low-level input voltage VHYS Hysteresis IODIS Output leakage disabled 0 V ≤ VENABLE ≤ VS 1 DDF Package 100 nA 0.7 × VS 6 V 0 0.3 × VS V 300 YFD package mV 1.35 5.5 0 0.4 100 VS = 5.0 V, VOUT = 0 V to 5.0 V, VENABLE = 0 V V V mV 1 5 µA 48 65 µA 90 µA POWER SUPPLY IQ Quiescent current VS = 1.8 V, VSENSE = 0 mV VS = 1.8 V, VSENSE = 0 mV, TA = –40°C to +125°C Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 5 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 at TA = 25°C, VSENSE = VIN+ – VIN–, VS = 1.8 V to 5.0 V, VIN+ = 12 V, VREF = VS / 2, and VENABLE = VS (unless otherwise noted) PARAMETER IQDIS (1) CONDITIONS Quiescent current disabled MIN VENABLE = 0 V, VSENSE = 0 mV TYP MAX UNIT 10 100 nA RTI = referred-to-input. 6.6 Typical Characteristics at TA = 25°C, VSENSE = VIN+ – VIN-, VS = 1.8 V to 5.0 V, VIN+ = 12 V, VREF = VS / 2, VENABLE = VS, and for all gain options (unless otherwise noted) 60 140 Power-Supply Rejection Ratio (dB) 50 Gain (dB) 40 30 20 10 0 -10 -20 10 A1 A2 A3 A4 A5 100 1k 10k Frequency (Hz) 100k 120 100 80 60 40 20 0 10 1M 100 VS = 5 V D020 Vs 140 -40°C 25°C 125°C Vs-0.4 100 80 Vs-0.8 Y 120 Output Swing (V) Common-Mode Rejection Ratio (dB) 1M Figure 6-2. Power-Supply Rejection Ratio vs. Frequency 160 GND+0.8 GND+0.4 60 GND 100 1k 10k Frequency (Hz) 100k 0 1M D021 1 2 3 4 5 6 7 Output Current (mA) 8 9 10 11 D010 VS = 1.8 V A3 devices Figure 6-3. Common-Mode Rejection Ratio vs. Frequency 6 100k VS = 5 V Figure 6-1. Gain vs. Frequency 40 10 1k 10k Frequency (Hz) D019 Figure 6-4. Output Voltage Swing vs. Output Current Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 6.6 Typical Characteristics (continued) at TA = 25°C, VSENSE = VIN+ – VIN-, VS = 1.8 V to 5.0 V, VIN+ = 12 V, VREF = VS / 2, VENABLE = VS, and for all gain options (unless otherwise noted) Vs 0.25 -40°C 25°C 125°C 0.2 0.15 Input Bias Current (nA) Vs-1 Y Output Swing (V) Vs-2 GND+2 0.1 0.05 0 -0.05 -0.1 -0.15 GND+1 -0.2 GND -0.25 0 5 10 15 20 25 Output Current (mA) 30 0 35 5 10 D009 VS = 5.0 V 80 0.2 75 Quiescent Current (PA) Input Bias Current (nA) 0.15 0.1 0.05 0 -0.05 -0.1 -0.15 -0.2 0 5 10 15 20 25 30 Common-Mode Voltage (V) 35 70 VS = 1.8 V VS = 3.3 V VS = 5 V 65 60 55 50 45 40 35 -50 D025 VENABLE = 0 V Figure 6-7. Input Bias Current vs. Common-Mode Voltage (Shutdown) -25 0 25 50 75 Temperature (qC) 100 125 150 D027 Figure 6-8. Quiescent Current vs. Temperature (Enabled) 240 70 VS = 1.8 V VS = 3.3 V VS = 5.0 V VS = 1.8 V VS = 5 V 65 Quiescent Current (PA) Quiescent Current (nA) D024 40 -0.25 150 120 90 60 30 60 55 50 45 0 -30 -50 40 Figure 6-6. Input Bias Current vs. Common-Mode Voltage 0.25 180 35 VS = 5.0 V Figure 6-5. Output Voltage Swing vs. Output Current 210 15 20 25 30 Common-Mode Voltage (V) -25 0 25 50 75 Temperature (qC) 100 125 150 40 -5 D002 VENABLE = 0 V 0 5 10 15 20 25 30 Common-Mode Voltage (V) 35 40 D029 VS = 5.0 V Figure 6-9. Quiescent Current vs. Temperature (Disabled) Figure 6-10. Quiescent Current vs. Common-Mode Voltage Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 7 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 6.6 Typical Characteristics (continued) at TA = 25°C, VSENSE = VIN+ – VIN-, VS = 1.8 V to 5.0 V, VIN+ = 12 V, VREF = VS / 2, VENABLE = VS, and for all gain options (unless otherwise noted) Input-Referred Voltage Noise (nV/—Hz) 100 Referred-to-Input Voltage Noise (0.5 PV/div) 80 70 60 50 40 30 20 10 10 100 1k Frequency (Hz) 10k 100k Time (1 s/div) D030 D031 A3 devices A3 devices Figure 6-12. 0.1-Hz to 10-Hz Voltage Noise (Referred-To-Input) VCM VOUT VOUT (100mV/div) Input Voltage 5 mV/div Common-Mode Voltage (10 V/div) Output Voltage 500 mV/div Figure 6-11. Input-Referred Voltage Noise vs. Frequency Time (20 Ps/div) Time (250 Ps/div) D032 D033 VS = 5.0 V, A3 devices A3 devices Figure 6-13. Step Response (10-mVPP Input Step) Figure 6-14. Common-Mode Voltage Transient Response Voltage (2 V/div) Non-inverting Input Output Voltage (2 V/div) Inverting Input Output 0V 0V Time (250 Ps/div) Time (250 Ps/div) D034 D035 A3 devices VS = 5.0 V, A3 devices Figure 6-15. Inverting Differential Input Overload 8 Figure 6-16. Noninverting Differential Input Overload Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 6.6 Typical Characteristics (continued) at TA = 25°C, VSENSE = VIN+ – VIN-, VS = 1.8 V to 5.0 V, VIN+ = 12 V, VREF = VS / 2, VENABLE = VS, and for all gain options (unless otherwise noted) Voltage (1 V/div) Supply Voltage Output Voltage Voltage (1V/div) Supply Voltage Output Voltage 0V 0V Time (10 Ps/div) Time (100 Ps/div) D036 D037 VS = 5.0 V, A3 devices VS = 5.0 V, A3 devices Figure 6-17. Start-Up Response Figure 6-18. Brownout Recovery 100 Enable Output IBP IBN 80 Voltage (1 V/div) Input Bias Current (nA) 60 40 20 0 -20 -40 -60 0V -80 -100 -110 -90 Time (250 Ps/div) -70 D038 70 90 110 D039 VS = 5.0 V, VREF = 2.5 V, A1 devices VS = 5.0 V, A3 devices Figure 6-20. IB+ and IB– vs. Differential Input Voltage Figure 6-19. Enable and Disable Response 25 1.25 IBP IBN -40qC 25qC 125qC Output Leakage Current (PA) 1 15 Input Bias Current (nA) -50 -30 -10 10 30 50 Differential Input Voltage (mV) 5 -5 -15 0.75 0.5 0.25 0 -0.25 -0.5 -0.75 -25 -60 -1 -40 -20 0 20 Differential Input Voltage (mV) 40 60 0 0.5 1 1.5 2 2.5 3 3.5 Output Voltage (V) D047 VS = 5.0 V, VREF = 2.5 V, A2, A3, A4, A5 devices Figure 6-21. IB+ and IB– vs. Differential Input Voltage 4 4.5 5 D040 VS = 5.0 V, VENABLE = 0 V, VREF = 2.5 V Figure 6-22. Output Leakage vs. Output Voltage (A1, A2, and A3 Devices) Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 9 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 6.6 Typical Characteristics (continued) at TA = 25°C, VSENSE = VIN+ – VIN-, VS = 1.8 V to 5.0 V, VIN+ = 12 V, VREF = VS / 2, VENABLE = VS, and for all gain options (unless otherwise noted) 5000 3 25qC -40qC 125qC 2 A5 1000 Output Impedance (:) Output Leakage Current (PA) 2.5 1.5 1 0.5 0 -0.5 -1 A4 A1 100 A2 A3 10 Gain Variants A1 A2 A3 A4 A5 1 -1.5 -2 -2.5 0 0.5 1 1.5 2 2.5 3 3.5 Output Voltage (V) 4 4.5 5 0.1 10 D048 VS = 5.0 V, VENABLE = 0 V, VREF = 2.5 V 1k 10k 100k Frequency (Hz) 1M 10M D050 VS = 5.0 V, VCM = 0 V Figure 6-23. Output Leakage vs. Output Voltage (A4 and A5 Devices) 10 100 Figure 6-24. Output Impedance vs. Frequency Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 7 Detailed Description 7.1 Overview The INA186 is a low bias current, low offset, 40-V common-mode, current-sensing amplifier. The DDF SOT-23 and YFD DSBGA packages also come with an enable pin. The INA186 is a specially designed, current-sensing amplifier that accurately measures voltages developed across current-sensing resistors on common-mode voltages that far exceed the supply voltage. Current is measured on input voltage rails as high as 40 V at VIN+ and VIN–, with a supply voltage, VS, as low as 1.7 V. When disabled, the output goes to a high-impedance state, and the supply current draw is reduced to less than 0.1 µA. The INA186 is intended for use in both low-side and high-side current-sensing configurations where high accuracy and low current consumption are required. 7.2 Functional Block Diagram ENABLE(1) VS INA186 IN+ + ± ± OUT ± + + REF(2) IN± GND 1. The ENABLE pin is available only in the DDF and YFD packages. 2. YFD packages without a REF pin have this node internally connected to GND. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 11 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 7.3 Feature Description 7.3.1 Precision Current Measurement The INA186 allows for accurate current measurements over a wide dynamic range. The high accuracy of the device is attributable to the low gain error and offset specifications. The offset voltage of the INA186 is less than ±50 µV. In this case, the low offset improves the accuracy at light loads when VIN+ approaches VIN–. Another advantage of low offset is the ability to use a lower-value shunt resistor that reduces the power loss in the current-sense circuit, and improves the power efficiency of the end application. The maximum gain error of the INA186 is specified at ±1%. As the sensed voltage becomes much larger than the offset voltage, the gain error becomes the dominant source of error in the current-sense measurement. When the device monitors currents near the full-scale output range, the total measurement error approaches the value of the gain error. 7.3.2 Low Input Bias Current The INA186 is different from many current-sense amplifiers because this device offers very low input bias current. The low input bias current of the INA186 has three primary benefits. The first benefit is the reduction of the current consumed by the device . Classical current-sense amplifier topologies typically consume tens of microamps of current at the inputs. For these amplifiers, the input current is the result of the resistor network that sets the gain and additional current to bias the input amplifier. To reduce the bias current to near zero, the INA186 uses a capacitively coupled amplifier on the input stage, followed by a difference amplifier on the output stage. The second benefit of low bias current is the ability to use input filters to reject high-frequency noise before the signal is amplified. In a traditional current-sense amplifier, the addition of input filters comes at the cost of reduced accuracy. However, as a result of the low bias currents, input filters have little effect on the measurement accuracy of the INA186. The third benefit of low bias current is the ability to use a larger current-sense resistor. This ability allows the device to accurately monitor currents as low as 1 µA. 7.3.3 Low Quiescent Current With Output Enable The device features low quiescent current (IQ), while still providing sufficient small-signal bandwidth to be usable in most applications. The quiescent current of the INA186 is only 48 µA (typical), while providing a small-signal bandwidth of 35 kHz in a gain of 100. The low IQ and good bandwidth allow the device to be used in many portable electronic systems without excessive drain on the battery. Because many applications only need to periodically monitor current, the INA186 features an enable pin that turns off the device until needed. When in the disabled state, the INA186 typically draws 10 nA of total supply current. 7.3.4 Bidirectional Current Monitoring The INA186 devices that feature a REF pin can sense current flow through a sense resistor in both directions. The bidirectional current-sensing capability is achieved by applying a voltage at the REF pin to offset the output voltage. A positive differential voltage sensed at the inputs results in an output voltage that is greater than the applied reference voltage. Likewise, a negative differential voltage at the inputs results in output voltage that is less than the applied reference voltage. Use Equation 1 to calculate the output voltage of the current-sense amplifier. VOUT I LOAD u RSENSE u GAIN VREF (1) where • • • • 12 ILOAD is the load current to be monitored. RSENSE is the current-sense resistor. GAIN is the gain option of the selected device. VREF is the voltage applied to the REF pin. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 7.3.5 High-Side and Low-Side Current Sensing The INA186 supports input common-mode voltages from –0.2 V to +40 V. Because of the internal topology, the common-mode range is not restricted by the power-supply voltage (VS). With the ability to operate with common-mode voltages greater or less than VS, Figure 7-1 shows an example on how the INA186 can be used in high-side and low-side current-sensing applications. Bus Suppl y up to +40 V IN+ High-Side Se nsing Commo n-mode volta ge (VCM ) is b us-voltage depen dent. R SENS E IN± LOA D IN+ R SENS E Low-Side Se nsing Commo n-mode volta ge (VCM ) is a lwa ys n ear groun d a nd is isolated fro m bus-voltage sp ikes. IN± Figure 7-1. High-Side and Low-Side Sensing Connections 7.3.6 High Common-Mode Rejection The INA186 uses a capacitively coupled amplifier on the front end. Therefore, dc common-mode voltages are blocked from downstream circuits, resulting in very high common-mode rejection. Typically, the common-mode rejection of the INA186 is approximately 150 dB. The ability to reject changes in the dc common-mode voltage allows the INA186 to monitor both high-voltage and low-voltage rail currents with very little change in the offset voltage. 7.3.7 Rail-to-Rail Output Swing The INA186 allows linear current-sensing operation with the output close to the supply rail and ground. The maximum specified output swing to the positive rail is VS – 40 mV, and the maximum specified output swing to GND is only GND + 1 mV. The close-to-rail output swing is useful to maximize the usable output range, particularly when operating the device from a 1.8-V supply. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 13 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 7.4 Device Functional Modes 7.4.1 Normal Operation The INA186 is in normal operation when the following conditions are met: • • • • • The power-supply voltage (VS) is between 1.7 V and 5.5 V. The common-mode voltage (VCM) is within the specified range of –0.2 V to +40 V. The maximum differential input signal times the gain plus VREF is less than the positive swing voltage VSP. The ENABLE pin is driven or connected to VS. The minimum differential input signal times the gain plus VREF is greater than the zero load swing to GND, VZL (see Rail-to-Rail Output Swing). For devices that do not feature a REF pin that value for VREF will be zero. During normal operation, this device produces an output voltage that is the amplified representation of the difference voltage from IN+ to IN– plus the voltage applied to the REF pin. 7.4.2 Unidirectional Mode This device can be configured to monitor current flowing in one direction (unidirectional) or in both directions (bidirectional) depending on how the REF pin is connected. Figure 7-2 shows the most common case is unidirectional where the output is set to ground when no current is flowing by connecting the REF pin to ground. When the current flows from the bus supply to the load, the input voltage from IN+ to IN– increases and causes the output voltage at the OUT pin to increase. Bus Voltage up to 40 V RSENSE Load VS 1.7 V to 5.5 V CBYPASS 0.1 µF ISENSE VS INA186 IN± Capacitively Coupled Amplifier ± OUT VOUT + REF IN+ GND Figure 7-2. Typical Unidirectional Application The linear range of the output stage is limited by how close the output voltage can approach ground under zero input conditions. The zero current output voltage of the INA186 is very small and for most unidirectional applications the REF pin is simply grounded. However, if the measured current multiplied by the current sense resistor and device gain is less than the zero current output voltage, then bias the REF pin to a convenient value above the zero current output voltage to get the output into the linear range of the device. To limit common-mode rejection errors, buffer the reference voltage connected to the REF pin. A less-frequently used output biasing method is to connect the REF pin to the power-supply voltage, VS. This method results in the output voltage saturating at 40 mV less than the supply voltage when no differential input voltage is present. This method is similar to the output saturated low condition with no differential input voltage when the REF pin is connected to ground. The output voltage in this configuration only responds to currents that develop negative differential input voltage relative to the device IN– pin. Under these conditions, when 14 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 the negative differential input signal increases, the output voltage moves downward from the saturated supply voltage. The voltage applied to the REF pin must not exceed VS. Another use for the REF pin in unidirectional operation is to level shift the output voltage. Figure 7-3 shows an application where the device ground is set to a negative voltage so currents biased to negative supplies, as seen in optical networking cards, can be measured. The GND of the INA186 can be set to negative voltages, as long as the inputs do not violate the common-mode range specification and the voltage difference between VS and GND does not exceed 5.5 V. In this example, the output of the INA186 is fed into a positive-biased analog-to-digital converter (ADC). By grounding the REF pin, the voltages at the output will be positive and not damage the ADC. To make sure the output voltage never goes negative, the supply sequencing must be the positive supply first, followed by the negative supply. + 1.8 V -3.3 V CBYPASS 0.1 µF RSENSE Load VS INA186 IN- Capacitively Coupled Amplifier ± OUT ADC + REF IN+ GND - 3.3 V Figure 7-3. Using the REF Pin to Level-Shift Output Voltage Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 15 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 7.4.3 Bidirectional Mode The INA186 is a bidirectional current-sense amplifier capable of measuring currents through a resistive shunt in two directions. This bidirectional monitoring is common in applications that include charging and discharging operations where the current flowing through the resistor can change directions. Bus Voltage up to 40 V VS 1.7 V to 5.5 V RSENSE Load CBYPASS 0.1 µF ISENSE VS INA186 IN± Reference Voltage Capacitively Coupled Amplifier ± OUT VOUT + REF IN+ GND + ± Figure 7-4. Bidirectional Application By applying a voltage to the REF pin, Figure 7-4 shows how you can measure this current flowing in both directions. The voltage applied to REF (VREF) sets the output state that corresponds to the zero-input level state. The output then responds by increasing above VREF for positive differential signals (relative to the IN– pin) and responds by decreasing below VREF for negative differential signals. This reference voltage applied to the REF pin can be set anywhere between 0 V to VS. For bidirectional applications, VREF is typically set at VS/2 for equal signal range in both current directions. In some cases, VREF is set at a voltage other than VS/2; for example, when the bidirectional current and corresponding output signal do not need to be symmetrical. 7.4.4 Input Differential Overload If the differential input voltage (VIN+ – VIN–) times gain exceeds the voltage swing specification, the INA186 drives its output as close as possible to the positive supply or ground, and does not provide accurate measurement of the differential input voltage. If this input overload occurs during normal circuit operation, then reduce the value of the shunt resistor or use a lower-gain version with the chosen sense resistor to avoid this mode of operation. If a differential overload occurs in a time-limited fault event, then the output of the INA186 returns to the expected value approximately 80 µs after the fault condition is removed. 16 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 7.4.5 Shutdown The INA186 features an active-high ENABLE pin that shuts down the device when pulled to ground. When the device is shut down, the quiescent current is reduced to 10 nA (typical), and the output goes to a highimpedance state. In a battery-powered application, the low quiescent current extends the battery lifetime when the current measurement is not needed. When the ENABLE pin is driven to the supply voltage, the device turns back on. The typical output settling time when enabled is 130 µs. The output of the INA186 goes to a high-impedance state when disabled. Figure 7-5 shows how to connect multiple outputs of the INA186 together to a single ADC or measurement device. When connected in this way, enable only one INA186 at a time, and make sure all devices have the same supply voltage. Bus Voltage1 upto to +40 V RSENSE Supply Voltage 1.7 V to 5.5 V LOAD 0.1 F ENABLE GPIO1 VS IN± INA186 ADC OUT Microcontroller IN+ GPIO2 REF GND Bus Voltage2 upto to +40 V RSENSE Supply Voltage 1.7 V to 5.5 V LOAD 0.1 F ENABLE VS IN± INA186 OUT IN+ GND REF Figure 7-5. Multiplexing Multiple Devices With the ENABLE Pin Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 17 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 8 Application and Implementation Note Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes, as well as validating and testing their design implementation to confirm system functionality. 8.1 Application Information The INA186 amplifies the voltage developed across a current-sensing resistor as current flows through the resistor to the load or ground. The high common-mode rejection of the INA186 makes it usable over a wide range of voltage rails while still maintaining an accurate current measurement. 8.1.1 Basic Connections Figure 8-1 shows the basic connections of the INA186. Place the device as close as possible to the current sense resistor and connect the input pins (IN+ and IN–) to the current sense resistor through kelvin connections. If present, the ENABLE pin must be controlled externally or connected to VS if not used. Bus Voltage ±0.2 V to +40 V 0.5 nA (typ) Supply Voltage 1.7 V to 5.5 V RSENSE LOAD 0.1 …F 0.5 nA (typ) (1) ENABLE VS IN± INA186 IN+ GND OUT ADC Microcontroller REF(2) (1) The ENABLE pin is available only in the DDF and YFD packages. (2) The REF pin is available only in the DDF and DCK packages. A. To help eliminate ground offset errors between the device and the analog-to-digital converter (ADC), connect the REF pin to the ADC reference input. When driving SAR ADCs, filter or buffer the output of the INA186 before connecting directly to the ADC. Figure 8-1. Basic Connections 18 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 8.1.2 RSENSE and Device Gain Selection The accuracy of any current-sense amplifier is maximized by choosing the current-sense resistor to be as large as possible. A large sense resistor maximizes the differential input signal for a given amount of current flow and reduces the error contribution of the offset voltage. However, there are practical limits as to how large the current-sense resistor can be in a given application because of the resistor size and maximum allowable power dissipation. Equation 2 gives the maximum value for the current-sense resistor for a given power dissipation budget: RSENSE PDMAX IMAX2 (2) where: • • PDMAX is the maximum allowable power dissipation in RSENSE. IMAX is the maximum current that will flow through RSENSE. An additional limitation on the size of the current-sense resistor and device gain is due to the power-supply voltage, VS, and device swing-to-rail limitations. In order to make sure that the current-sense signal is properly passed to the output, both positive and negative output swing limitations must be examined. Equation 3 provides the maximum values of RSENSE and GAIN to keep the device from exceeding the positive swing limitation. IMAX u RSENSE u GAIN < VSP VREF (3) where: • • • • IMAX is the maximum current that will flow through RSENSE. GAIN is the gain of the current-sense amplifier. VSP is the positive output swing as specified in the data sheet. VREF is the externally applied voltage on the REF pin. This voltage is zero for devices without a REF pin. To avoid positive output swing limitations when selecting the value of RSENSE, there is always a trade-off between the value of the sense resistor and the gain of the device under consideration. If the sense resistor selected for the maximum power dissipation is too large, then it is possible to select a lower-gain device in order to avoid positive swing limitations. The negative swing limitation places a limit on how small the sense resistor value can be for a given application. Equation 4 provides the limit on the minimum value of the sense resistor. IMIN u RSENSE u GAIN > VSN VREF (4) where: • • • • IMIN is the minimum current that will flow through RSENSE. GAIN is the gain of the current-sense amplifier. VSN is the negative output swing of the device (see Rail-to-Rail Output Swing). VREF is the externally applied voltage on the REF pin. This voltage is zero for devices without a REF pin. In addition to adjusting RSENSE and the device gain, the voltage applied to the REF pin can be slightly increased above GND to avoid negative swing limitations. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 19 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 8.1.3 Signal Conditioning When performing accurate current measurements in noisy environments, the current-sensing signal is often filtered. The INA186 features low input bias currents. Therefore, adding a differential mode filter to the input without sacrificing the current-sense accuracy is possible. Filtering at the input is advantageous because this action attenuates differential noise before the signal is amplified. Figure 8-2 provides an example of how to use a filter on the input pins of the device. Bus Voltage up to 40 V VS 1.7 V to 5.5 V CBYPASS 0.1 µF RSENSE Load Capacitively Coupled Amplifier IN± RF f3dB 1 4SRFCF CF VS INA186 ± RDIFF OUT VOUT + RF REF IN+ GND Figure 8-2. Filter at the Input Pins Figure 8-2 shows the differential input impedance (RDIFF) limits the maximum value for RF. Figure 8-3 shows the value of RDIFF is a function of the device temperature. 6 A1 A2, A3, A4, A5 Input Impedance (M:) 5 4 3 2 1 -50 -25 0 25 50 75 Temperature (qC) 100 125 150 D115 Figure 8-3. Differential Input Impedance vs. Temperature 20 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 As the voltage drop across the sense resistor (VSENSE) increases, the amount of voltage dropped across the input filter resistors (RF) also increases. The increased voltage drop results in additional gain error. The error caused by these resistors is calculated by the resistor divider equation shown in Equation 5. Error(%) § RDIFF ¨1 ¨ RSENSE RDIFF © 2 u RF · ¸ u 100 ¸ ¹ (5) where: • • RDIFF is the differential input impedance. RF is the added value of the series filter resistance. The input stage of the INA186 uses a capacitive feedback amplifier topology in order to achieve high dc precision. As a result, periodic high-frequency shunt voltage (or current) transients of significant amplitude (10 mV or greater) and duration (hundreds of nanoseconds or greater) may be amplified by the INA186, even though the transients are greater than the device bandwidth. Use a differential input filter in these applications to minimize disturbances at the INA186 output. The high input impedance and low bias current of the INA186 provide flexibility in the input filter design without impacting the accuracy of current measurement. For example, set RF = 100 Ω and CF = 22 nF to achieve a low-pass filter corner frequency of 36.2 kHz. These filter values significantly attenuate most unwanted highfrequency signals at the input without severely impacting the current sensing bandwidth or precision. If a lower corner frequency is desired, increase the value of CF. Filtering the input filters out differential noise across the sense resistor. If high-frequency, common-mode noise is a concern, add an RC filter from the OUT pin to ground. The RC filter helps filter out both differential and common mode noise, as well as internally generated noise from the device. The value for the resistance of the RC filter is limited by the impedance of the load. Any current drawn by the load manifests as an external voltage drop from the INA186 OUT pin to the load input. To select the optimal values for the output filter, use Output Impedance vs. Frequency and see the Closed-Loop Analysis of Load-Induced Amplifier Stability Issues Using ZOUT application report Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 21 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 8.1.4 Common-Mode Voltage Transients With a small amount of additional circuitry, the INA186 can be used in circuits subject to transients that exceed the absolute maximum voltage ratings. The most simple way to protect the inputs from negative transients is to add resistors in series with the IN– and IN+ pins. Use resistors that are 1 kΩ or less, and limit the current in the ESD structures to less than 5 mA. For example, using 1-kΩ resistors in series with the INA186 allows voltages as low as –5 V, while limiting the ESD current to less than 5 mA. Use the circuits shown in Figure 8-4 and Figure 8-5 if protection from high-voltage or more-negative, common-voltage transients is needed. When implementing these circuits, use only Zener diodes or Zener-type transient absorbers (sometimes referred to as transzorbs); any other type of transient absorber has an unacceptable time delay. Start by adding a pair of resistors as a working impedance for the Zener diode (see Figure 8-4). Keep these resistors as small as possible; most often, use around 100 Ω. See Signal Conditioning for information on how larger values can be used with an effect on gain. This circuit limits only short-term transients; therefore, many applications are satisfied with a 100-Ω resistor along with conventional Zener diodes of the lowest acceptable power rating. This combination uses the least amount of board space. These diodes can be found in packages as small as SOT-523 or SOD-523. Bus Voltage up to 40 V VS 1.7 V to 5.5 V CBYPASS 0.1 µF RSENSE Load VS RPROTECT INA186 IN± < 1 k: Capacitively Coupled Amplifier ± OUT RPROTECT < 1 k: VOUT + REF IN+ GND Figure 8-4. Transient Protection Using Dual Zener Diodes In the event that low-power Zener diodes do not have sufficient transient absorption capability, a higher-power transzorb must be used. The most package-efficient solution involves using a single transzorb and back-to-back diodes between the device inputs, as shown in Figure 8-5. The most space-efficient solutions are dual, seriesconnected diodes in a single SOT-523 or SOD-523 package. In either of the examples shown in Figure 8-4 and Figure 8-5, the total board area required by the INA186 with all protective components is less than that of an SO-8 package, and only slightly greater than that of an VSSOP-8 package. Bus Voltage up to 40 V VS 1.7 V to 5.5 V CBYPASS 0.1 µF RSENSE Load VS RPROTECT INA186 IN± < 1 k: Capacitively Coupled Amplifier Transorb ± OUT VOUT + RPROTECT < 1 k: REF IN+ GND Figure 8-5. Transient Protection Using a Single Transzorb and Input Clamps For more information, see the Current Shunt Monitor With Transient Robustness reference design. 22 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 8.2 Typical Applications The low input bias current of the INA186 allows accurate monitoring of small-value currents. To accurately monitor currents in the microamp range, increase the value of the sense resistor to increase the sense voltage so that the error introduced by the offset voltage is small. Figure 8-6 shows the circuit configuration for monitoring low-value currents. As a result of the differential input impedance of the INA186, limit the value of RSENSE to 1 kΩ or less for best accuracy. RSENSE ” 1 kO 12 V 5V LOAD 0.1 F VS IN± OUT INA186 IN+ REF GND Figure 8-6. Microamp Current Measurement 8.2.1 Design Requirements Table 8-1 lists the design requirements for the circuit shown in Figure 8-6. Table 8-1. Design Parameters DESIGN PARAMETER EXAMPLE VALUE Power-supply voltage (VS) 5V Bus supply rail (VCM) 12 V Minimum sense current (IMIN) 1 µA Maximum sense current (IMAX) 150 µA Device gain (GAIN) 25 V/V Reference voltage (VREF) 0V Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 23 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 8.2.2 Detailed Design Procedure The maximum value of the current-sense resistor is calculated based on choice of gain, value of the maximum current the be sensed (IMAX), and the power-supply voltage (VS). When operating at the maximum current, the output voltage must not exceed the positive output swing specification, VSP. Using Equation 6, for the given design parameters the maximum value for RSENSE is calculated to be 1.321 kΩ. RSENSE < VSP IMAX u GAIN (6) However, because this value exceeds the maximum recommended value for RSENSE, a resistance value of 1 kΩ must be used. When operating at the minimum current value, IMIN the output voltage must be greater than the swing to GND (VSN), specification. For this example, the output voltage at the minimum current is calculated using Equation 7 to be 25 mV, which is greater than the value for VSN. VOUTMIN IMIN u RSENSE u GAIN (7) 8.2.3 Application Curve Figure 8-7 shows the output of the device under the conditions given in Table 8-1 and with RSENSE = 1 kΩ. 4 3.5 Output Voltage (V) 3 2.5 2 1.5 1 0.5 0 0 25 50 75 100 Input Current (µA) 125 150 D031 Figure 8-7. Typical Application DC Transfer Function 9 Power Supply Recommendations The input circuitry of the INA186 accurately measures beyond the power-supply voltage, VS. For example, VS can be 5 V, whereas the bus supply voltage at IN+ and IN– can be as high as 40 V. However, the output voltage range of the OUT pin is limited by the voltage on the VS pin. The INA186 also withstands the full differential input signal range up to 40 V at the IN+ and IN– input pins, regardless of whether the device has power applied at the VS pin. There is no sequencing requirement for VS and VIN+ or VIN–. 24 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 10 Layout 10.1 Layout Guidelines • • • Connect the input pins to the sensing resistor using a Kelvin or 4-wire connection. This connection technique makes sure that only the current-sensing resistor impedance is detected between the input pins. Poor routing of the current-sensing resistor commonly results in additional resistance present between the input pins. Given the very low ohmic value of the current resistor, any additional high-current carrying impedance can cause significant measurement errors. Place the power-supply bypass capacitor as close as possible to the device power supply and ground pins. The recommended value of this bypass capacitor is 0.1 µF. Additional decoupling capacitance can be added to compensate for noisy or high-impedance power supplies. When routing the connections from the current-sense resistor to the device, keep the trace lengths as short as possible. The input filter capacitor CF should be placed as close as possible to the input pins of the device. 10.2 Layout Examples Current Sense Output Connect REF to GND for Unidirectional Measurement or to External Reference for Bidirectional Measurement Note: RF and CF are optional in low noise/ripple environments VIA to Ground Plane Supply Voltage (1.7 V to 5.5 V) REF 1 GND 2 VS 3 INA186 6 OUT 5 IN- 4 IN+ CF RF RSHUNT CBYPASS RF VIA to Ground Plane Figure 10-1. Recommended Layout for SC70 (DCK) Package Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 25 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 Note: RF and CF are optional in low noise/ripple environments CF RF CBYPASS Supply Voltage (1.7 V to 5.5 V) VS 1 8 IN- 7 IN+ RSHUNT 2 ENABLE Connect to VS if not used TI Device REF 3 6 N.C. GND 4 5 OUT IN+ RF VIA to Ground Plane Connect REF to GND for Unidirectional Measurement or to External Reference for Bidirectional Measurement Current Sense Output Figure 10-2. Recommended Layout for SOT-23 (DDF) Package 26 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 RSHUNT RF(1) RF(1) CF(1) VIA to Ground Plane IN± B1 A1 IN+ GND B2 A2 VS ENABLE B3 A3 OUT Connect to Supply (1.7 V to 5.5 V) CBYPASS Current Sense Output Connect to Control or VS (Do not float) Figure 10-3. Recommended Layout DSBGA (YFD) Package Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 27 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 11 Device and Documentation Support 11.1 Documentation Support 11.1.1 Related Documentation For related documentation see the following: Texas Instruments, INA186EVM user's guide 11.2 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on Subscribe to updates to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 11.3 Support Resources TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight from the experts. Search existing answers or ask your own question to get the quick design help you need. Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. 11.4 Trademarks TI E2E™ is a trademark of Texas Instruments. All trademarks are the property of their respective owners. 11.5 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 11.6 Glossary TI Glossary This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 28 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 PACKAGE OUTLINE YFD0006-C02 DSBGA - 0.4 mm max height SCALE 14.000 DIE SIZE BALL GRID ARRAY A 1.20 1.14 B BALL A1 CORNER 0.80 0.73 0.4 MAX C SEATING PLANE 0.175 0.125 BALL TYP 0.8 TYP B SYMM 0.4 TYP A 6X 0.015 0.285 0.185 C A B 2 1 3 SYMM 0.4 TYP 4224626/B 02/2019 NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. www.ti.com Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 29 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 EXAMPLE BOARD LAYOUT YFD0006-C02 DSBGA - 0.4 mm max height DIE SIZE BALL GRID ARRAY (0.4) TYP 6X ( 0.225) 1 2 A (0.4) TYP B SYMM LAND PATTERN EXAMPLE EXPOSED METAL SHOWN SCALE:50X 0.05 MAX ( 0.225) METAL EXPOSED METAL SOLDER MASK OPENING ( 0.225) SOLDER MASK OPENING 0.05 MIN EXPOSED METAL NON-SOLDER MASK DEFINED (PREFERRED) METAL UNDER SOLDER MASK SOLDER MASK DEFINED SOLDER MASK DETAILS NOT TO SCALE 4224626/B 02/2019 NOTES: (continued) 3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints. Refer to Texas Instruments Literature No. SNVA009 (www.ti.com/lit/snva009). www.ti.com 30 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 INA186 www.ti.com SBOS318B – APRIL 2019 – REVISED JULY 2021 EXAMPLE STENCIL DESIGN YFD0006-C02 DSBGA - 0.4 mm max height DIE SIZE BALL GRID ARRAY (0.4) TYP (R0.05) TYP 6X ( 0.25) 1 3 2 A SYMM (0.4) TYP B METAL TYP SOLDER PASTE EXAMPLE BASED ON 0.1 mm THICK STENCIL SCALE:50X 4224626/B 02/2019 NOTES: (continued) www.ti.com Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA186 31 PACKAGE OPTION ADDENDUM www.ti.com 12-Aug-2021 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) INA186A1IDCKR ACTIVE SC70 DCK 6 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 1E7 INA186A1IDCKT ACTIVE SC70 DCK 6 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 1E7 INA186A1IDDFR ACTIVE SOT-23-THIN DDF 8 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 1ZLW INA186A1IDDFT ACTIVE SOT-23-THIN DDF 8 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 1ZLW INA186A1IYFDR ACTIVE DSBGA YFD 6 3000 RoHS & Green SNAGCU Level-1-260C-UNLIM -40 to 125 1IJ INA186A2IDCKR ACTIVE SC70 DCK 6 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 1E8 INA186A2IDCKT ACTIVE SC70 DCK 6 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 1E8 INA186A2IDDFR ACTIVE SOT-23-THIN DDF 8 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 1ZMW INA186A2IDDFT ACTIVE SOT-23-THIN DDF 8 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 1ZMW INA186A2IYFDR ACTIVE DSBGA YFD 6 3000 RoHS & Green SNAGCU Level-1-260C-UNLIM -40 to 125 1IK INA186A3IDCKR ACTIVE SC70 DCK 6 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 1E9 INA186A3IDCKT ACTIVE SC70 DCK 6 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 1E9 INA186A3IDDFR ACTIVE SOT-23-THIN DDF 8 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 1ZNW INA186A3IDDFT ACTIVE SOT-23-THIN DDF 8 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 1ZNW INA186A3IYFDR ACTIVE DSBGA YFD 6 3000 RoHS & Green SNAGCU Level-1-260C-UNLIM -40 to 125 1IL INA186A4IDCKR ACTIVE SC70 DCK 6 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 1EA INA186A4IDCKT ACTIVE SC70 DCK 6 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 1EA INA186A4IDDFR ACTIVE SOT-23-THIN DDF 8 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 1ZOW INA186A4IDDFT ACTIVE SOT-23-THIN DDF 8 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 1ZOW INA186A4IYFDR ACTIVE DSBGA YFD 6 3000 RoHS & Green SNAGCU Level-1-260C-UNLIM -40 to 125 1IM Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com Orderable Device 12-Aug-2021 Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) INA186A5IDCKR ACTIVE SC70 DCK 6 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 1EB INA186A5IDCKT ACTIVE SC70 DCK 6 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 1EB INA186A5IDDFR ACTIVE SOT-23-THIN DDF 8 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 1ZPW INA186A5IDDFT ACTIVE SOT-23-THIN DDF 8 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 1ZPW INA186A5IYFDR ACTIVE DSBGA YFD 6 3000 RoHS & Green SNAGCU Level-1-260C-UNLIM -40 to 125 1IN (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
INA186A3IDCKT 价格&库存

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INA186A3IDCKT
  •  国内价格
  • 1+13.51885
  • 10+12.25146
  • 13+9.12522
  • 36+8.70276
  • 250+8.61827
  • 2500+8.36479

库存:0

INA186A3IDCKT
    •  国内价格 香港价格
    • 250+12.45690250+1.55350
    • 500+11.97270500+1.49310
    • 1250+9.853301250+1.22880
    • 2500+9.521802500+1.18750

    库存:1500

    INA186A3IDCKT
    •  国内价格
    • 1+9.28730
    • 10+6.87000
    • 100+5.88860
    • 1000+4.90720

    库存:18

    INA186A3IDCKT
    •  国内价格
    • 1+3.71520
    • 10+3.61800
    • 30+3.55320
    • 100+3.49920

    库存:135

    INA186A3IDCKT
    •  国内价格 香港价格
    • 250+8.89615250+1.11166
    • 500+6.56868500+0.82082
    • 1000+6.492101000+0.81125
    • 3000+6.441043000+0.80487
    • 5000+6.405835000+0.80047
    • 10000+6.3873410000+0.79816

    库存:250

    INA186A3IDCKT
    •  国内价格 香港价格
    • 1+13.403531+1.67490
    • 10+9.8154810+1.22654
    • 25+8.9033425+1.11256
    • 100+7.90449100+0.98775

    库存:545