Product
Folder
Order
Now
Tools &
Software
Technical
Documents
Support &
Community
Reference
Design
INA193, INA194, INA195
INA196, INA197, INA198
ZHCSFN8G – MAY 2004 – REVISED JANUARY 2015
INA19x 共模电压范围为 -16V 至 +80V 的分流监测计
1 特性
•
1
•
•
•
•
•
3 说明
宽共模电压范围:
-16V 至 +80V
低误差:3.0%(整个温度范围内的最大值)
带宽:高达 500kHz
三种传递函数:20V/V、50V/V 和 100V/V
静态电流:900µA(最大值)
完整的电流感测解决方案
INA193−INA198 系列是电压输出分流监测计,能够在
-16V 至 +80V 范围内的共模电压下感测分流器两端的
压降,与 INA19x 电源电压无关。这些器件均提供三种
输出电压级别:20V/V、50V/V 和 100V/V。500kHz
带宽方便用于电流控制回路。INA193−INA195 器件与
INA196−INA198 器件的功能相同,但引脚配置有所不
同。
INA193-INA198 器件由 2.7V 至 18V 的单电源供电,
最大供电电流为 900μA。这些器件均在 -40°C 至
+125°C 的扩展运行温度范围内额定运行,并且采用节
省空间的 SOT-23 封装。
2 应用
•
•
•
•
•
•
•
焊接设备
笔记本电脑
手机
电信设备
汽车用
电源管理
电池充电器
器件信息(1)
器件型号
封装
封装尺寸(标称值)
INA193
INA194
INA195
SOT-23 (5)
INA196
2.90mm x 1.60mm
INA197
INA198
(1) 要了解所有可用封装,请见数据表末尾的可订购产品附录。
LP38690 的
Negative
and
Positive
Common-Mode
Voltage
IS
RS
VIN+
-16V to +80V
V+
+2.7V to +18V
VIN+
VIN-
R1
R1
Load
A1
A2
OUT
INA193-INA198
RL
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SBOS307
INA193, INA194, INA195
INA196, INA197, INA198
ZHCSFN8G – MAY 2004 – REVISED JANUARY 2015
www.ti.com.cn
目录
1
2
3
4
5
6
7
8
特性 ..........................................................................
应用 ..........................................................................
说明 ..........................................................................
修订历史记录 ...........................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
4
7.1
7.2
7.3
7.4
7.5
7.6
4
4
4
4
5
7
Absolute Maximum Ratings ......................................
ESD Ratings ............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description ............................................ 11
8.1 Overview ................................................................. 11
8.2 Functional Block Diagram ....................................... 11
8.3 Feature Description................................................. 12
8.4 Device Functional Modes........................................ 16
9
Application and Implementation ........................ 22
9.1 Application Information............................................ 22
9.2 Typical Application .................................................. 22
10 Power Supply Recommendations ..................... 23
11 Layout................................................................... 23
11.1 Layout Guidelines ................................................. 23
11.2 Layout Example .................................................... 24
12 器件和文档支持 ..................................................... 25
12.1
12.2
12.3
12.4
相关链接................................................................
商标 .......................................................................
静电放电警告.........................................................
Glossary ................................................................
25
25
25
25
13 机械、封装和可订购信息 ....................................... 25
4 修订历史记录
注:之前版本的页码可能与当前版本有所不同。
Changes from Revision F (February 2010) to Revision G
•
Page
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 4
Changes from Revision E (August 2006) to Revision F
Page
•
已按照最新标准更新了文档格式 ............................................................................................................................................. 1
•
Added test conditions to Output, Total Output Error parameter in Electrical Characteristics: VS = +12V.............................. 5
2
Copyright © 2004–2015, Texas Instruments Incorporated
INA193, INA194, INA195
INA196, INA197, INA198
www.ti.com.cn
ZHCSFN8G – MAY 2004 – REVISED JANUARY 2015
5 Device Comparison Table
PART NUMBER
GAIN
PINOUT(1)
INA193
20 V/V
Pinout #1
INA194
50 V/V
Pinout #1
INA195
100 V/V
Pinout #1
INA196
20 V/V
Pinout #2
INA197
50 V/V
Pinout #2
INA198
100 V/V
Pinout #2
(1) See Pin Configuration and Functions for Pinout #1 and Pinout #2.
6 Pin Configuration and Functions
DBV Package
5-Pin SOT-23
INA193, INA194, INA195 Top View
OUT
1
GND
2
VIN+
3
5
4
DBV Package
5-Pin SOT-23
INA196, INA197, INA198 Top View
V+
VIN-
OUT
1
GND
2
V+
3
5
VIN-
4
VIN+
Pin Functions
PIN
NAME
INA193,
INA194,
INA195
INA196,
INA197,
INA198
TYPE
DESCRIPTION
DBV
DBV
GND
2
2
OUT
1
1
O
V+
5
3
Analog
VIN+
3
4
I
Connect to supply side of shunt resistor
VIN–
4
5
I
Connect to load side of shunt resistor
GND
Copyright © 2004–2015, Texas Instruments Incorporated
Ground
Output voltage
Power supply, 2.7 V to 18 V
3
INA193, INA194, INA195
INA196, INA197, INA198
ZHCSFN8G – MAY 2004 – REVISED JANUARY 2015
www.ti.com.cn
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
18
V
Supply Voltage
Analog Inputs, VIN+, VIN−
–18
18
V
Differential (VIN+) – (VIN−)
–18
18
V
Common-Mode (2)
–16
80
V
GND – 0.3
(V+) + 0.3
V
5
mA
150
°C
150
°C
150
°C
Analog Output, Out
(2)
Input Current Into Any Pin (2)
Operating Temperature
–55
Junction Temperature
Storage temperature, Tstg
(1)
(2)
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Input voltage at any pin may exceed the voltage shown if the current at that pin is limited to 5mA.
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1)
±4000
Charged device model (CDM), per JEDEC specification JESD22-C101,
all pins (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VCM
Common-mode input voltage
12
V
V+
Operating supply voltage
12
V
TA
Operating free-air temperature
-40
125
ºC
7.4 Thermal Information
INA19x
THERMAL METRIC (1)
DBV (SOT-23)
UNIT
5 PINS
RθJA
Junction-to-ambient thermal resistance
221.7
RθJC(top)
Junction-to-case (top) thermal resistance
144.7
RθJB
Junction-to-board thermal resistance
49.7
ψJT
Junction-to-top characterization parameter
26.1
ψJB
Junction-to-board characterization parameter
49.0
(1)
4
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
Copyright © 2004–2015, Texas Instruments Incorporated
INA193, INA194, INA195
INA196, INA197, INA198
www.ti.com.cn
ZHCSFN8G – MAY 2004 – REVISED JANUARY 2015
7.5 Electrical Characteristics
All specifications at TA = 25°C, VS = 12 V, VIN+ = 12 V, and VSENSE = 100 mV, unless otherwise noted.
PARAMETER
TEST CONDITIONS
TA = −40°C to +125°C
TA = 25°C
MIN
TYP
MAX
UNIT
TYP
MAX
MIN
0.15
(VS – 0.2)/Gain
–16
V
80
–16
V
INPUT
VSENSE = VIN+ − VIN−
VSENSE
Full-Scale Input Voltage
VCM
Common-Mode Input
Range
CMR
Common-Mode Rejection VIN+ = −16 V to 80 V
Common-Mode
Rejection, Over
Temperature
VOS
80
94
dB
VIN+ = 12 V to 80 V
Offset Voltage, RTI
100
±0.5
120
dB
2
mV
Offset Voltage, RTI Over
Temperature
0.5
dVOS/dT
Offset Voltage, RTI vs
Temperature
2.5
PSR
Offset Voltage, RTI vs
Power Supply
IB
Input Bias Current, VIN−
pin
VS = 2.7 V to 18 V, VIN+ = 18 V
3
mV
μV/°C
5
100
μV/V
±8
±16
μA
OUTPUT (VSENSE ≥ 20mV)
G
Gain
20
V/V
INA194, INA197
50
V/V
INA195, INA198
100
V/V
VSENSE = 20 mV to 100 mV,
TA = 25°C
Gain Error
Gain Error Over
Temperature
Total Output Error
INA193, INA196
±0.2%
±1%
VSENSE = 20 mV to 100 mV
(1)
VSENSE = 100 mV
±2
±0.75%
±2.2%
Total Output Error Over
Temperature
Nonlinearity Error
RO
±1%
VSENSE = 20 mV to 100 mV
Output Impedance
Maximum Capacitive
Load
No Sustained Oscillation
All
Devices
Output (2)
±0.002%
±0.1%
1.5
Ω
10
nF
−16 V ≤ VCM < 0 V,
VSENSE < 20 mV
300
VS < VCM ≤ 80 V,
VSENSE < 20 mV
300
mV
INA193,
INA196
INA194,
INA197
±3%
0 V ≤ VCM ≤ VS,
VS = 5 V,
VSENSE < 20 mV
INA195,
INA198
0.4
V
1
V
2
V
VOLTAGE OUTPUT (3) (RL = 100 kΩ to GND)
Swing to V+ PowerSupply Rail
(V+) – 0.1
(V+) – 0.2
Swing to GND (4)
(VGND) + 3
(VGND) + 50
V
mV
FREQUENCY RESPONSE
INA193,
INA196
BW
Bandwidth
INA194,
INA197
CLOAD = 5 pF
INA195,
INA198
(1)
(2)
(3)
(4)
500
kHz
300
kHz
200
kHz
Total output error includes effects of gain error and VOS.
For details on this region of operation, see the Accuracy Variations as a Result of VSENSE and Common-Mode Voltage section.
See Typical Characteristic curve Output Swing vs Output Current, Figure 7.
Specified by design.
Copyright © 2004–2015, Texas Instruments Incorporated
5
INA193, INA194, INA195
INA196, INA197, INA198
ZHCSFN8G – MAY 2004 – REVISED JANUARY 2015
www.ti.com.cn
Electrical Characteristics (continued)
All specifications at TA = 25°C, VS = 12 V, VIN+ = 12 V, and VSENSE = 100 mV, unless otherwise noted.
PARAMETER
Phase Margin
SR
tS
TEST CONDITIONS
CLOAD < 10 nF
TYP
MAX
MIN
TYP
MAX
UNIT
40
Slew Rate
Settling Time (1%)
TA = −40°C to +125°C
TA = 25°C
MIN
VSENSE = 10 mV to 100 mVPP,
CLOAD = 5 pF
1
V/μs
2
μs
40
nV/√Hz
NOISE, RTI
Voltage Noise Density
POWER SUPPLY
VS
Operating Range
2.7
IQ
Quiescent Current
VOUT = 2 V
Quiescent Current Over
Temperature
VSENSE = 0 mV
700
18
900
V
μA
370
950
μA
TEMPERATURE RANGE
θJA
6
Specified Temperature
Range
–40
125
°C
Operating Temperature
Range
–55
150
°C
Storage Temperature
Range
–65
150
°C
Thermal Resistance,
SOT23
200
°C/W
Copyright © 2004–2015, Texas Instruments Incorporated
INA193, INA194, INA195
INA196, INA197, INA198
www.ti.com.cn
ZHCSFN8G – MAY 2004 – REVISED JANUARY 2015
7.6 Typical Characteristics
All specifications at TA = 25°C, VS = 12 V, and VIN+ = 12 V, and VSENSE = 100 mV, unless otherwise noted.
45
40
G = 50
35
Gain (dB)
30
G = 100
40
G = 50
35
Gain (dB)
45
CLOAD = 1000pF
G = 100
G = 20
25
20
30
20
15
15
10
10
5
G = 20
25
5
10k
100k
10k
1M
100k
Frequency (Hz)
Figure 1. Gain vs Frequency
Figure 2. Gain vs Frequency
20
140
18
130
Common- Mode and
Power- Supply Rejection (dB)
100V/V
16
VOUT (V)
14
50V/V
12
10
8
20V/V
6
4
120
CMR
110
100
90
PSR
80
70
60
50
2
40
0
20
100
200
300
400
500
600
700
800
900
10
100
1k
VDIFFERENTIAL (mV)
10k
100k
Frequency (Hz)
Figure 3. Gain Plot
Figure 4. Common-Mode and Power-Supply Rejection vs
Frequency
4.0
0.1
3.5
0.09
0.08
3.0
Output Error (%)
Output Error
(% error of the ideal output value)
1M
Frequency (Hz)
2.5
2.0
1.5
1.0
0.07
0.06
0.05
0.04
0.03
0.02
0.5
0.01
0
0
50
100 150
200
250 300
350 400 450 500
VSENSE (mV)
Figure 5. Output Error vs VSENSE
Copyright © 2004–2015, Texas Instruments Incorporated
0
-16 -12 -8 -4
0
4
8
12 16 20
...
76 80
Common-Mode Voltage (V)
Figure 6. Output Error vs Common-Mode Voltage
7
INA193, INA194, INA195
INA196, INA197, INA198
ZHCSFN8G – MAY 2004 – REVISED JANUARY 2015
www.ti.com.cn
Typical Characteristics (continued)
All specifications at TA = 25°C, VS = 12 V, and VIN+ = 12 V, and VSENSE = 100 mV, unless otherwise noted.
12
1000
11
10
Sourcing Current
9
800
+25°C
8
700
+125°C
7
6
VS = 3V
5
Sourcing Current
+25°C
4
3
+125°C
0
400
300
200
100
0
5
0
500
Output stage is designed
to source current. Current
sinking capability is
approximately 400mA.
-40°C
2
1
600
-40°C
IQ (mA)
Output Voltage (V)
900
VS = 12V
10
20
15
25
30
2
1
0
Output Current (mA)
9
10
10
7.5
Input Bias Current (PA)
Input Bias Current (PA)
8
12.5
IN-
10
IN+
5
2.5
0
-2.5
-5
7.5
5
2.5
0
-2.5
-5
-7.5
-7.5
-10
-10
-12.5
-20
-10
0
10
20
30
40
50
Common-Mode Voltage (V)
60
70
80
IN+
IN-
-12.5
-20
-10
0
D001
Figure 9. Input Bias Current vs Common Mode Voltage
Vs=5 V
10
20
30
40
50
Common-Mode Voltage (V)
VS = 2.7V
675
575
475
VS = 12V
VSENSE = 0mV:
VS = 2.7V
275
Output Short-Circuit Current (mA)
VS = 12V
60
70
80
D102
Figure 10. Input Bias Current vs Common Mode Voltage
Vs=12 V
34
VSENSE = 100mV:
775
IQ (mA)
7
6
15
12.5
-40°C
30
+25°C
26
+125°C
22
18
14
10
6
175
-16 -12 -8 -4
0
4
8
12 16
20
...
76 80
VCM (V)
Figure 11. Quiescent Current vs Common-Mode Voltage
8
5
Figure 8. Quiescent Current vs Output Voltage
15
375
4
Output Voltage (V)
Figure 7. Positive Output Voltage Swing vs Output Current
875
3
2.5 3.5
4.5
5.5 6.5
7.5
8.5
9.5 10.5 11.5 17
18
Supply Voltage (V)
Figure 12. Output Short-Circuit Current vs Supply Voltage
Copyright © 2004–2015, Texas Instruments Incorporated
INA193, INA194, INA195
INA196, INA197, INA198
www.ti.com.cn
ZHCSFN8G – MAY 2004 – REVISED JANUARY 2015
Typical Characteristics (continued)
All specifications at TA = 25°C, VS = 12 V, and VIN+ = 12 V, and VSENSE = 100 mV, unless otherwise noted.
G = 20
Output Voltage (50mV/div)
Output Voltage (500mV/div)
G = 20
VSENSE = 10mV to 20mV
VSENSE = 10mV to 100mV
Time (2ms/div)
Time (2ms/div)
Figure 13. Step Response
Figure 14. Step Response
G = 50
Output Voltage (50mV/div)
Output Voltage (100mV/div)
G = 20
VSENSE = 90mV to 100mV
VSENSE = 10mV to 20mV
Time (2ms/div)
Time (5ms/div)
Figure 15. Step Response
Figure 16. Step Response
G = 50
Output Voltage (1V/div)
Output Voltage (100mV/div)
G = 50
VSENSE = 10mV to 100mV
Time (5ms/div)
Figure 17. Step Response
Copyright © 2004–2015, Texas Instruments Incorporated
VSENSE = 90mV to 100mV
Time (5ms/div)
Figure 18. Step Response
9
INA193, INA194, INA195
INA196, INA197, INA198
ZHCSFN8G – MAY 2004 – REVISED JANUARY 2015
www.ti.com.cn
Typical Characteristics (continued)
All specifications at TA = 25°C, VS = 12 V, and VIN+ = 12 V, and VSENSE = 100 mV, unless otherwise noted.
Output Voltage (2V/div)
G = 100
VSENSE = 10mV to 100mV
Time (10ms/div)
Figure 19. Step Response
10
Copyright © 2004–2015, Texas Instruments Incorporated
INA193, INA194, INA195
INA196, INA197, INA198
www.ti.com.cn
ZHCSFN8G – MAY 2004 – REVISED JANUARY 2015
8 Detailed Description
8.1 Overview
The INA193−INA198 family of current shunt monitors with voltage output can sense drops across shunts at
common-mode voltages from −16 V to +80 V, independent of the INA19x supply voltage. They are available with
three output voltage scales: 20 V/V, 50 V/V, and 100 V/V. The 500-kHz bandwidth simplifies use in current
control loops. The INA193−INA195 devices provide identical functions but alternative pin configurations to the
INA196−INA198, respectively.
The INA193−INA198 devices operate from a single +2.7-V to +18-V supply, drawing a maximum of 900 μA of
supply current. They are specified over the extended operating temperature range (−40°C to +125°C), and are
offered in a space-saving SOT-23 package.
8.2 Functional Block Diagram
VIN+
VIN
R1(1)
5 k:
R1(1)
5 k:
V+
A1
A2
G = 20, RL = 100 k:
G = 50, RL = 250 k:
G = 100, RL = 500 k:
INA193-INA198
Copyright © 2004–2015, Texas Instruments Incorporated
OUT
RL(1)
GND
11
INA193, INA194, INA195
INA196, INA197, INA198
ZHCSFN8G – MAY 2004 – REVISED JANUARY 2015
www.ti.com.cn
8.3 Feature Description
8.3.1 Basic Connection
Figure 20 shows the basic connection of the INA193-INA198. To minimize any resistance in series with the shunt
resistance, connect the input pins, VIN+ and VIN−, as closely as possible to the shunt resistor.
Power-supply bypass capacitors are required for stability. Applications with noisy or high impedance power
supplies may require additional decoupling capacitors to reject power-supply noise. Connect bypass capacitors
close to the device pins.
VIN+
-16V to +80V
RS
IS
V+
+2.7V to +18V
VIN+
VIN-
R1
R2
Load
OUT
INA193-INA198
RL
Figure 20. INA193-INA198 Basic Connection
8.3.2 Selecting RS
The value chosen for the shunt resistor, RS, depends on the application and is a compromise between smallsignal accuracy and maximum permissible voltage loss in the measurement line. High values of RS provide better
accuracy at lower currents by minimizing the effects of offset, while low values of RS minimize voltage loss in the
supply line. For most applications, best performance is attained with an RS value that provides a full-scale shunt
voltage range of 50 mV to 100 mV. Maximum input voltage for accurate measurements is 500 mV.
8.3.3 Inside the INA193-INA198
The INA193-INA198 devices use a new, unique internal circuit topology that provides common-mode range
extending from −16 to 80 V while operating from a single power supply. The common-mode rejection in a classic
instrumentation amplifier approach is limited by the requirement for accurate resistor matching. By converting the
induced input voltage to a current, the INA193-INA198 devices provide common-mode rejection that is no longer
a function of closely matched resistor values, providing the enhanced performance necessary for such a wide
common-mode range. A simplified diagram (shown in Figure 21) shows the basic circuit function. When the
common-mode voltage is positive, amplifier A2 is active.
12
Copyright © 2004–2015, Texas Instruments Incorporated
INA193, INA194, INA195
INA196, INA197, INA198
www.ti.com.cn
ZHCSFN8G – MAY 2004 – REVISED JANUARY 2015
Feature Description (continued)
The differential input voltage, (VIN+) − (VIN−) applied across RS, is converted to a current through a resistor. This
current is converted back to a voltage through RL, and then amplified by the output buffer amplifier. When the
common-mode voltage is negative, amplifier A1 is active. The differential input voltage, (VIN+) − (VIN−) applied
across RS, is converted to a current through a resistor. This current is sourced from a precision current mirror
whose output is directed into RL converting the signal back into a voltage and amplified by the output buffer
amplifier. Patent-pending circuit architecture ensures smooth device operation, even during the transition period
where both amplifiers A1 and A2 are active.
VIN+
VIN
R1(1)
5 k:
R1(1)
5 k:
V+
A1
A2
G = 20, RL = 100 k:
G = 50, RL = 250 k:
G = 100, RL = 500 k:
INA193-INA198
OUT
RL(1)
GND
(1) Nominal resistor values are shown. ±15% variation is possible. Resistor ratios are matched to ±1%.
Figure 21. INA193-INA198 Simplified Circuit Diagram
Copyright © 2004–2015, Texas Instruments Incorporated
13
INA193, INA194, INA195
INA196, INA197, INA198
ZHCSFN8G – MAY 2004 – REVISED JANUARY 2015
www.ti.com.cn
RSHUNT
LOAD
+12V
I1
+5V
VIN+
VIN-
V+
V+
OUT
for
+12V
Common-Mode
INA193-INA198
GND
INA193-INA198
VIN+
VIN- GND
OUT
for
-12V
Common-Mode
RSHUNT
LOAD
-12V
I2
Figure 22. Monitor Bipolar Output Power-Supply Current
14
Copyright © 2004–2015, Texas Instruments Incorporated
INA193, INA194, INA195
INA196, INA197, INA198
www.ti.com.cn
ZHCSFN8G – MAY 2004 – REVISED JANUARY 2015
Up to +80V
RSHUNT
Solenoid
VIN+
+2.7V to +18V
VINV+
OUT
INA193-INA198
Figure 23. Inductive Current Monitor Including Flyback
Copyright © 2004–2015, Texas Instruments Incorporated
15
INA193, INA194, INA195
INA196, INA197, INA198
ZHCSFN8G – MAY 2004 – REVISED JANUARY 2015
www.ti.com.cn
VIN+
VIN-
V+
For output
signals > comparator trip-point.
R1
OUT
TLV3012
INA193-INA198
R2
(a) INA193-INA198 output adjusted by voltage divider.
VIN+
VIN-
REF
1.25V
Internal
Reference
V+
OUT
TLV3012
INA193-INA198
R1
(b) Comparator reference voltage adjusted by voltage divider.
R2
REF
1.25V
Internal
Reference
For use with
small output signals.
Figure 24. INA193-INA198 with Comparator
8.4 Device Functional Modes
8.4.1 Input Filtering
An obvious and straightforward location for filtering is at the output of the INA193-INA198 devices; however, this
location negates the advantage of the low output impedance of the internal buffer. The only other option for
filtering is at the input pins of the INA193-INA198 devices, which is complicated by the internal 5-kΩ + 30% input
impedance; this is illustrated in Figure 25. Using the lowest possible resistor values minimizes both the initial shift
in gain and effects of tolerance. The effect on initial gain is given by Equation 1:
16
Copyright © 2004–2015, Texas Instruments Incorporated
INA193, INA194, INA195
INA196, INA197, INA198
www.ti.com.cn
ZHCSFN8G – MAY 2004 – REVISED JANUARY 2015
Device Functional Modes (continued)
GainError% = 100 -
5kW
5kW + RFILT
´ 100
(1)
Total effect on gain error can be calculated by replacing the 5-kΩ term with 5 kΩ − 30%, (or 3.5 kΩ) or 5 kΩ +
30% (or 6.5 kΩ). The tolerance extremes of RFILT can also be inserted into the equation. If a pair of 100-Ω 1%
resistors are used on the inputs, the initial gain error will be approximately 2%. Worst-case tolerance conditions
will always occur at the lower excursion of the internal 5-kΩ resistor (3.5 kΩ), and the higher excursion of RFILT −
3% in this case.
Note that the specified accuracy of the INA193-INA198 devices must then be combined in addition to these
tolerances. While this discussion treated accuracy worst-case conditions by combining the extremes of the
resistor values, it is appropriate to use geometric mean or root sum square calculations to total the effects of
accuracy variations.
RSHUNT 3V
A1
0.1mF
A2
OUT
INA193-INA198
RL
Figure 28. INA193-INA198 Example Shutdown Circuit
20
Copyright © 2004–2015, Texas Instruments Incorporated
INA193, INA194, INA195
INA196, INA197, INA198
www.ti.com.cn
ZHCSFN8G – MAY 2004 – REVISED JANUARY 2015
Device Functional Modes (continued)
8.4.4 Transient Protection
The −16-V to +80-V common-mode range of the INA193-INA198 devices is ideal for withstanding automotive
fault conditions ranging from 12-V battery reversal up to 80-V transients, since no additional protective
components are needed up to those levels. In the event that the INA193-INA198 devices are exposed to
transients on the inputs in excess of its ratings, then external transient absorption with semiconductor transient
absorbers (zeners or Transzorbs) will be necessary. Use of MOVs or VDRs is not recommended except when
they are used in addition to a semiconductor transient absorber. Select the transient absorber such that it will
never allow the INA193-INA198 devices to be exposed to transients greater than +80 V (that is, allow for
transient absorber tolerance, as well as additional voltage due to transient absorber dynamic impedance).
Despite the use of internal zener-type ESD protection, the INA193-INA198 devices do not lend themselves to
using external resistors in series with the inputs because the internal gain resistors can vary up to ±30%. (If gain
accuracy is not important, then resistors can be added in series with the INA193-INA198 inputs with two equal
resistors on each input.)
8.4.5 Output Voltage Range
The output of the INA193-INA198 devices are accurate within the output voltage swing range set by the powersupply pin, V+. This is best illustrated when using the INA195 or INA198 devices (which are both versions using
a gain of 100), where a 100-mV full-scale input from the shunt resistor requires an output voltage swing of +10 V,
and a power-supply voltage sufficient to achieve +10 V on the output.
Copyright © 2004–2015, Texas Instruments Incorporated
21
INA193, INA194, INA195
INA196, INA197, INA198
ZHCSFN8G – MAY 2004 – REVISED JANUARY 2015
www.ti.com.cn
9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The INA193-INA198 devices measure the voltage developed across a current-sensing resistor when current
passes through it. The ability to have shunt common-mode voltages from −16-V to +80-V drive and control the
output signal with Vs offers multiple configurations, as discussed throughout this section.
9.2 Typical Application
The device is a unidirectional, current-sense amplifier capable of measuring currents through a resistive shunt
with shunt common-mode voltages from −16 V to 80 V. Two devices can be configured for bidirectional
monitoring and is common in applications that include charging and discharging operations where the current
flow-through resistor can change directions.
RSHUNT
LOAD
VSUPPLY
+5V
VIN+
VIN-
+5V
VIN+
V+
VIN-
V+
+5V
INA152
40kW
OUT
INA193-INA198
40kW
OUT
VOUT
INA193-INA198
40kW
40kW
+2.5V
VREF
Figure 29. Bi-Directional Current Monitoring
9.2.1 Design Requirements
Vsupply is set to 12 V, Vref at 2.5 V and a 10-mΩ shunt. The accuracy of the current will typically be less than
0.5% for current greater than ±2 A. For current lower than ±2 A, the accuracy will vary; use the Device Functional
Modes section for accuracy considerations.
22
Copyright © 2004–2015, Texas Instruments Incorporated
INA193, INA194, INA195
INA196, INA197, INA198
www.ti.com.cn
ZHCSFN8G – MAY 2004 – REVISED JANUARY 2015
Typical Application (continued)
9.2.2 Detailed Design Procedure
The ability to measure this current flowing in both directions is enabled by adding a unity gain amplifier with a
VREF, as shown in Figure 29. The output then responds by increasing above VREF for positive differential signals
(relative to the IN – pin) and responds by decreasing below VREF for negative differential signals. This reference
voltage applied to the REF pin can be set anywhere between 0 V to V+. For bidirectional applications, VREF is
typically set at mid- scale for equal signal range in both current directions. In some cases, however, VREF is set
at a voltage other than mid-scale when the bidirectional current and corresponding output signal do not need to
be symmetrical.
9.2.3 Application Curve
An example output response of a bidirectional configuration is shown in Figure 30. With the REF pin connected
to a reference voltage, 2.5 V in this case, the output voltage is biased upwards by this reference level. The
output rises above the reference voltage for positive differential input signals and falls below the reference
voltage for negative differential input signals.
10
I_in
VOUT
Current (I), Voltage (V)
7.5
5
2.5
0
-2.5
-5
-7.5
-10
0
2
4
6
8
10
12
14
16
18
20
Time (µs)
Figure 30. Output Voltage vs Shunt Input Current
10 Power Supply Recommendations
The input circuitry of the INA193-INA198 devices can accurately measure beyond its power-supply voltage, V+.
For example, the V+ power supply can be 5 V, whereas the load power-supply voltage is up to 80 V. The output
voltage range of the OUT terminal, however, is limited by the voltages on the power-supply pin.
11 Layout
11.1 Layout Guidelines
11.1.1 RFI and EMI
Attention to good layout practices is always recommended. Keep traces short and, when possible, use a printed
circuit board (PCB) ground plane with surface-mount components placed as close to the device pins as possible.
Small ceramic capacitors placed directly across amplifier inputs can reduce RFI/EMI sensitivity. PCB layout
should locate the amplifier as far away as possible from RFI sources. Sources can include other components in
the same system as the amplifier itself, such as inductors (particularly switched inductors handling a lot of current
and at high frequencies). RFI can generally be identified as a variation in offset voltage or DC signal levels with
changes in the interfering RF signal. If the amplifier cannot be located away from sources of radiation, shielding
may be needed. Twisting wire input leads makes them more resistant to RF fields. The difference in input pin
location of the INA193-INA195 devices versus the INA196-INA198 devices may provide different EMI
performance.
Copyright © 2004–2015, Texas Instruments Incorporated
23
INA193, INA194, INA195
INA196, INA197, INA198
ZHCSFN8G – MAY 2004 – REVISED JANUARY 2015
www.ti.com.cn
11.2 Layout Example
Via to Power or Ground Plane
Via to Internal Layer
Supply Bypass
Capacitor
Supply Voltage
Output Signal
OUT
V+
GND
IN+
IN-
Shunt Resistor
Figure 31. Recommended Layout
24
版权 © 2004–2015, Texas Instruments Incorporated
INA193, INA194, INA195
INA196, INA197, INA198
www.ti.com.cn
ZHCSFN8G – MAY 2004 – REVISED JANUARY 2015
12 器件和文档支持
12.1 相关链接
下面的表格列出了快速访问链接。范围包括技术文档、支持和社区资源、工具和软件,以及样片或购买的快速访
问。
表 1. 相关链接
器件
产品文件夹
样片与购买
技术文档
工具与软件
支持与社区
INA193
请单击此处
请单击此处
请单击此处
请单击此处
请单击此处
INA194
请单击此处
请单击此处
请单击此处
请单击此处
请单击此处
INA195
请单击此处
请单击此处
请单击此处
请单击此处
请单击此处
INA196
请单击此处
请单击此处
请单击此处
请单击此处
请单击此处
INA197
请单击此处
请单击此处
请单击此处
请单击此处
请单击此处
INA198
请单击此处
请单击此处
请单击此处
请单击此处
请单击此处
12.2 商标
All trademarks are the property of their respective owners.
12.3 静电放电警告
这些装置包含有限的内置 ESD 保护。 存储或装卸时,应将导线一起截短或将装置放置于导电泡棉中,以防止 MOS 门极遭受静电损
伤。
12.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 机械、封装和可订购信息
以下页中包括机械、封装和可订购信息。这些信息是针对指定器件可提供的最新数据。这些数据会在无通知且不对
本文档进行修订的情况下发生改变。欲获得该数据表的浏览器版本,请查阅左侧的导航栏。
版权 © 2004–2015, Texas Instruments Incorporated
25
PACKAGE OPTION ADDENDUM
www.ti.com
15-Jul-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
HPA02230AIDBVR
ACTIVE
SOT-23
DBV
5
3000
TBD
Call TI
Call TI
-40 to 125
INA193AIDBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJJ
Samples
INA193AIDBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJJ
Samples
INA194AIDBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJI
Samples
INA194AIDBVRG4
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJI
Samples
INA194AIDBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJI
Samples
INA194AIDBVTG4
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJI
Samples
INA195AIDBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJK
Samples
INA195AIDBVRG4
ACTIVE
SOT-23
DBV
5
3000
TBD
Call TI
Call TI
-40 to 125
INA195AIDBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJK
Samples
INA195AIDBVTG4
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJK
Samples
INA196AIDBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJE
Samples
INA196AIDBVRG4
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJE
Samples
INA196AIDBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJE
Samples
INA196AIDBVTG4
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJE
Samples
INA197AIDBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJH
Samples
INA197AIDBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJH
Samples
INA198AIDBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJL
Samples
INA198AIDBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJL
Samples
INA198AIDBVTG4
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJL
Samples
Addendum-Page 1
Samples
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
15-Jul-2022
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of