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INA199
SBOS469G – APRIL 2009 – REVISED FEBRUARY 2017
INA199 26-V, Bidirectional, Zero-Drift, Low- or High-Side,
Voltage-Output, Current-Shunt Monitor
1 Features
3 Description
•
•
The INA199 series of voltage-output, current-shunt
monitors (also called current-sense amplifiers) are
commonly used for overcurrent protection, precisioncurrent measurement for system optimization, or in
closed-loop feedback circuits. This series of devices
can sense drops across shunt resistors at commonmode voltages from –0.3 V to 26 V, independent of
the supply voltage. Three fixed gains are available:
50 V/V, 100 V/V, and 200 V/V. The low offset of the
zero-drift architecture enables current sensing with
maximum drops across the shunt as low as 10-mV
full-scale.
1
•
•
•
•
Wide Common-Mode Range: –0.3 V to 26 V
Offset Voltage: ±150 μV (Maximum)
(Enables Shunt Drops of 10-mV Full-Scale)
Accuracy:
– Gain Error (Maximum Over Temperature):
– ±1% (C Version)
– ±1.5% (A and B Versions)
– 0.5-μV/°C Offset Drift (Maximum)
– 10-ppm/°C Gain Drift (Maximum)
Choice of Gains:
– INA199x1: 50 V/V
– INA199x2: 100 V/V
– INA199x3: 200 V/V
Quiescent Current: 100 μA (Maximum)
Packages: 6-Pin SC70, 10-Pin UQFN
These devices operate from a single 2.7-V to 26-V
power supply, drawing a maximum of 100 µA of
supply current. All versions are specified from –40°C
to 125°C, and offered in both SC70-6 and thin UQFN10 packages.
Device Information(1)
PART NUMBER
2 Applications
•
•
•
•
•
•
INA199
Notebook Computers
Cell Phones
Qi-Compliant Wireless Charging Transmitters
Telecom Equipment
Power Management
Battery Chargers
PACKAGE
BODY SIZE (NOM)
SC70 (6)
2.00 mm × 1.25 mm
UQFN (10)
1.80 mm × 1.40 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
RSHUNT
Supply
Reference
Voltage
OUT
REF
GND
2.7 V to 26 V
CBYPASS
0.01 mF
to
0.1 mF
R1
R3
R2
R4
Load
Output
IN-
IN+
V+
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
INA199
SBOS469G – APRIL 2009 – REVISED FEBRUARY 2017
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
4
4
5
7.1
7.2
7.3
7.4
7.5
7.6
5
5
6
6
7
8
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description ............................................ 12
8.1 Overview ................................................................. 12
8.2 Functional Block Diagram ....................................... 12
8.3 Feature Description................................................. 13
8.4 Device Functional Modes........................................ 14
9
Application and Implementation ........................ 19
9.1 Application Information............................................ 19
9.2 Typical Applications ................................................ 19
10 Power Supply Recommendations ..................... 22
11 Layout................................................................... 22
11.1 Layout Guidelines ................................................. 22
11.2 Layout Example .................................................... 22
12 Device and Documentation Support ................. 23
12.1
12.2
12.3
12.4
12.5
12.6
Documentation Support ........................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
23
23
23
23
23
23
13 Mechanical, Packaging, and Orderable
Information ........................................................... 23
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision F (June 2016) to Revision G
Page
•
Changed first sub-bullet of Accuracy Features bullet: deleted ±1.5% from sub-bullet and added version differences ........ 1
•
Changed 105°C to 125°C in last paragraph of Description section ...................................................................................... 1
•
Added INA199Cx to last row of Analog inputs in Absolute Maximum Ratings table.............................................................. 5
•
Changed INA199Ax HBM value from ±4000 to ±2000 and changed INA199B1, INA199B2, and INA199B3 to
INA199Bx and INA199Cx in second V(ESD) section of ESD Ratings table ............................................................................. 5
•
Changed maximum specification from 105 to 125 in TA row of Recommended Operating Conditions table ........................ 6
•
Changed all TA = –40°C to 105°C to TA = –40°C to 125°C in Electrical Characteristics table .............................................. 7
•
Added version C to last row of VCM parameter in Electrical Characteristics table ................................................................ 7
•
Added versions A and B to first Gain error parameter row, added second row .................................................................... 7
•
Changed devices listed in test conditions of GBW parameter in Electrical Characteristics table to INA199x1,
INA199x2, and INA199x3, respectively for the three rows..................................................................................................... 7
•
Changed maximum specification from 105 to 125 in Specified range parameter of Electrical Characteristics table ............ 7
•
Changed 105°C to 125°C in last paragraph of Overview section ........................................................................................ 12
•
Changed INA199A2 and INA199B2 to INA199x2 and changed INA199A2 and INA199B2 to INA199x2 in last
paragraph of Input Filtering section ...................................................................................................................................... 15
•
Changed listed products in table of Figure 22 ..................................................................................................................... 15
•
Changed version B to version B and C in second paragraph of Improving Transient Robustness section ........................ 18
Changes from Revision E (December 2015) to Revision F
Page
•
Changed Package Features bullet to include pin count for both packages .......................................................................... 1
•
Deleted last Applications bullet............................................................................................................................................... 1
•
Changed Description section.................................................................................................................................................. 1
•
Changed Analog inputs parameter in Absolute Maximum Ratings table ............................................................................... 5
•
Changed ESD Ratings table: deleted both Machine model rows, changed INA199B HBM specification ............................. 5
•
Changed Electrical Characteristics table: recombined the two Electrical Characteristics tables into one ............................ 7
2
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SBOS469G – APRIL 2009 – REVISED FEBRUARY 2017
•
Added minimum specification to second row of Power Supply, VS parameter in Electrical Characteristics table ................ 7
•
Added θJA parameter back to Electrical Characteristics table ............................................................................................... 7
Changes from Revision D (November 2012) to Revision E
•
Page
Added ESD Ratings table, Thermal Information table, Feature Description section, Device Functional Modes,
Application and Implementation section, Power Supply Recommendations section, Layout section, Device and
Documentation Support section, and Mechanical, Packaging, and Orderable Information section ..................................... 1
Changes from Revision C (August 2012) to Revision D
Page
•
Changed Frequency Response, Bandwidth parameter in Electrical Characteristics table .................................................... 7
•
Updated Figure 21................................................................................................................................................................ 14
•
Updated Figure 22................................................................................................................................................................ 15
Changes from Revision B (February 2010) to Revision C
Page
•
Added INA199Bx gains to fourth Features bullet ................................................................................................................... 1
•
Added INA199Bx data to Product Family Table..................................................................................................................... 4
•
Added INA199Bx data to Package Information table ............................................................................................................. 4
•
Added silicon version B data to Input, Common-Mode Input Range parameter of Electrical Characteristics table .............. 7
•
Added QFN package information to Temperature Range section of Electrical Characteristics table.................................... 7
•
Updated Figure 3.................................................................................................................................................................... 8
•
Updated Figure 9.................................................................................................................................................................... 9
•
Updated Figure 12.................................................................................................................................................................. 9
•
Changed last paragraph of the Selecting RS section to cover both INA199Ax and INA199Bx versions ............................. 13
•
Changed Input Filtering section............................................................................................................................................ 14
•
Added Improving Transient Robustness section .................................................................................................................. 18
Changes from Revision A (June 2009) to Revision B
Page
•
Deleted ordering information content from Package/Ordering table ...................................................................................... 4
•
Updated DCK pinout drawing ................................................................................................................................................. 4
Changes from Original (April 2009) to Revision A
•
Page
Added ordering number and transport media, quantity columns to Package/Ordering Information table ............................. 4
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SBOS469G – APRIL 2009 – REVISED FEBRUARY 2017
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5 Device Comparison Table
PRODUCT
GAIN
R3 AND R4
R1 AND R2
INA199x1
50
20 kΩ
1 MΩ
INA199x2
100
10 kΩ
1 MΩ
INA199x3
200
5 kΩ
1 MΩ
6 Pin Configuration and Functions
DCK Package
6-Pin SC70
Top View
RSW Package
10-Pin UQFN
Top View
NC
REF
1
6
OUT
GND
2
5
IN-
V+
3
4
IN+
REF
8
GND
9
OUT
10
V+
7
6
1
NC
(1)
(1)
(1)
2
5
IN-
4
IN-
3
IN+
IN+
NC denotes no internal connection. These pins can be left floating or connected to any voltage between GND and V+.
Pin Functions
PIN
NAME
SC70
UQFN
I/O
DESCRIPTION
GND
2
9
Analog
IN–
5
4, 5
Analog input
Connect to load side of shunt resistor.
IN+
4
2, 3
Analog input
Connect to supply side of shunt resistor.
NC
—
1, 7
—
OUT
6
10
Analog output
Output voltage
REF
1
8
Analog input
Reference voltage, 0 V to V+
V+
3
6
Analog
Power supply, 2.7 V to 26 V
4
Ground
Not internally connected. Leave floating or connect to ground.
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SBOS469G – APRIL 2009 – REVISED FEBRUARY 2017
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
UNIT
26
V
Supply voltage
Differential (VIN+) – (VIN–)
–26
26
Common-mode (3), INA199Ax
GND – 0.3
26
Common-mode (3), INA199Bx and INA199Cx
GND – 0.1
26
REF input
GND – 0.3
(V+) + 0.3
Output (3)
GND – 0.3
(V+) + 0.3
V
5
mA
125
°C
150
°C
150
°C
Analog inputs, VIN+, VIN– (2)
Input current Into all pins (3)
Operating temperature
–40
Junction temperature
Storage temperature, Tstg
(1)
(2)
(3)
–65
V
V
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively.
Input voltage at any pin c an exceed the voltage shown if the current at that pin is limited to 5 mA.
7.2 ESD Ratings
VALUE
UNIT
INA199A1, INA199A2, and INA199A3 in DCK and RSW Packages
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±1000
V
INA199Bx and INA199Cx in DCK and RSW Packages
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±3500
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±1000
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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SBOS469G – APRIL 2009 – REVISED FEBRUARY 2017
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7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
VCM
Common-mode input voltage
VS
Operating supply voltage (applied to V+)
TA
Operating free-air temperature
NOM
MAX
12
UNIT
V
5
V
–40
125
°C
7.4 Thermal Information
INA199
THERMAL METRIC (1)
DCK (SC70)
RSW (UQFN)
UNIT
6 PINS
10 PINS
RθJA
Junction-to-ambient thermal resistance
227.3
107.3
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
79.5
56.5
°C/W
RθJB
Junction-to-board thermal resistance
72.1
18.7
°C/W
ψJT
Junction-to-top characterization parameter
3.6
1.1
°C/W
ψJB
Junction-to-board characterization parameter
70.4
18.7
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
—
—
°C/W
(1)
6
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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SBOS469G – APRIL 2009 – REVISED FEBRUARY 2017
7.5 Electrical Characteristics
at TA = 25°C, VS = 5 V, VIN+ = 12 V, VSENSE = VIN+ – VIN–, and VREF = VS / 2 (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT
VCM
Common-mode input range
CMR
Common-mode rejection
VOS
Offset voltage, RTI
dVOS/dT
(1)
Version A, TA = –40°C to 125°C
–0.3
26
Version B and C, TA = –40°C to 125°C
–0.1
26
VIN+ = 0 V to 26 V, VSENSE = 0 mV,
TA = –40°C to 125°C
100
V
120
dB
VSENSE = 0 mV
±5
±150
VOS vs temperature
TA = –40°C to 125°C
0.1
0.5
PSR
Power supply rejection
VS = 2.7 V to 18 V,
VIN+ = 18 V, VSENSE = 0 mV
IB
Input bias current
VSENSE = 0 mV
28
μA
IOS
Input offset current
VSENSE = 0 mV
±0.02
μA
μV
μV/°C
±0.1
μV/V
OUTPUT
G
Gain
INA199x1
50
INA199x2
100
INA199x3
200
Gain error
Version A and B, VSENSE = –5 mV to
5 mV, TA = –40°C to 125°C
±0.03%
±1.5%
Version C, VSENSE = –5 mV to 5 mV,
TA = –40°C to 125°C
±0.03%
±1%
3
10
Gain error vs temperature
TA = –40°C to 125°C
Nonlinearity error
VSENSE = –5 mV to 5 mV
Maximum capacitive load
No sustained oscillation
VOLTAGE OUTPUT
V/V
ppm/°C
±0.01%
1
nF
(2)
Swing to V+ power-supply rail
RL = 10 kΩ to GND, TA = –40°C to 125°C
(V+) –
0.05
(V+) –
0.2
V
Swing to GND
RL = 10 kΩ to GND, TA = –40°C to 125°C
(VGND) +
0.005
(VGND) +
0.05
V
FREQUENCY RESPONSE
GBW
SR
Bandwidth
CLOAD = 10 pF, INA199x1
80
CLOAD = 10 pF, INA199x2
30
CLOAD = 10 pF, INA199x3
14
Slew rate
NOISE, RTI
kHz
0.4
V/μs
25
nV/√Hz
(1)
Voltage noise density
POWER SUPPLY
TA = –40°C to 125°C
2.7
26
–20°C to 85°C
2.5
26
VS
Operating voltage range
IQ
Quiescent current
VSENSE = 0 mV
IQ over temperature
TA = –40°C to 125°C
65
V
100
μA
115
μA
TEMPERATURE RANGE
θJA
(1)
(2)
Specified range
–40
125
°C
Operating range
–40
125
°C
Thermal resistance
SC70
250
UQFN
80
°C/W
RTI = Referred-to-input.
See Typical Characteristic curve, Output Voltage Swing vs Output Current (Figure 6).
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7.6 Typical Characteristics
20
1.0
15
0.8
0.6
10
CMRR (mV/V)
Offset Voltage (mV)
performance measured with the INA199A3 at TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS / 2 (unless otherwise noted)
5
0
-5
0.4
0.2
0
-0.2
-0.4
-10
-0.6
-15
-0.8
-20
-50
0
-25
25
50
75
100
-1.0
-50
125
-25
0
25
Figure 1. Offset Voltage vs Temperature
125
140
G = 200
50
120
40
100
|PSR| (dB)
Gain (dB)
100
160
60
30
G = 50
G = 100
20
80
60
VS = 5 V + 250-mV sine disturbance
VCM = 0 V
VDIF = Shorted
VREF = 2.5 V
40
10
VCM = 0V
VDIF = 15mVPP Sine
0
20
0
-10
10
100
1k
10k
100k
1M
10M
1
10
100
Frequency (Hz)
Figure 3. Gain vs Frequency
Output Voltage Swing (V)
120
100
80
60
VS = +5V
VCM = 1V Sine
VDIF = Shorted
VREF = 2.5V
20
0
1
10
100
1k
10k
100k
Figure 4. Power-Supply Rejection Ratio vs Frequency
140
40
1k
Frequency (Hz)
160
|CMRR| (dB)
75
Figure 2. Common-Mode Rejection Ratio vs Temperature
70
10k
100k
V+
(V+) - 0.5
(V+) - 1.0
(V+) - 1.5
(V+) - 2.0
(V+) - 2.5
(V+) - 3.0
VS = 5V to 26V
VS = 2.7V
to 26V
VS = 2.7V
GND + 3.0
GND + 2.5
GND + 2.0
GND + 1.5
GND + 1.0
GND + 0.5
GND
TA = -40°C
TA = +25°C
TA = +105°C
VS = 2.7V to 26V
0
1M
Frequency (Hz)
5
10
15
20
25
30
35
40
Output Current (mA)
Figure 5. Common-Mode Rejection Ratio vs Frequency
8
50
Temperature (°C)
Temperature (°C)
Figure 6. Output Voltage Swing vs Output Current
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Typical Characteristics (continued)
50
V+
(V+) - 0.25
(V+) - 0.50
(V+) - 0.75
(V+) - 1.00
(V+) - 1.25
(V+) - 1.50
+25°C
40
-20°C
Input Bias Current (mA)
Output Voltage (V)
performance measured with the INA199A3 at TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS / 2 (unless otherwise noted)
+85°C
GND + 1.50
GND + 1.25
GND + 1.00
GND + 0.75
GND + 0.50
GND + 0.25
GND
+85°C
+25°C
IB+, IB-, VREF = 0V
30
20
IB+, IB-, VREF = 2.5V
10
0
-20°C
-10
0
2
4
5
8
10
12
14
0
18
16
5
10
15
20
25
30
Common-Mode Voltage (V)
Output Current (mA)
VS = 2.5 V
Figure 8. Input Bias Current vs Common-Mode Voltage
With Supply Voltage = 5 V
Figure 7. Output Voltage Swing vs Output Current
30
30
IB+, IB-, VREF = 0V
and
IB-, VREF = 2.5V
20
Input Bias Current (mA)
Input Bias Current (mA)
25
15
10
5
IB+, VREF = 2.5V
29
28
27
26
0
25
-50
-5
0
5
10
15
20
25
30
0
25
50
75
100
125
Temperature (°C)
Figure 9. Input Bias Current vs Common-Mode Voltage
With Supply Voltage = 0 V (Shutdown)
Figure 10. Input Bias Current vs Temperature
Input-Referred Voltage Noise (nV/ÖHz)
70
Quiescent Current (mA)
-25
Common-Mode Voltage (V)
68
66
64
62
60
-50
100
G = 50
VS = ±2.5V
VREF = 0V
VIN-, VIN+ = 0V
1
-25
0
25
50
75
100
125
G = 200
G = 100
10
10
100
1k
10k
100k
Temperature (°C)
Frequency (Hz)
Figure 11. Quiescent Current vs Temperature
Figure 12. Input-Referred Voltage Noise vs Frequency
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Typical Characteristics (continued)
2VPP Output Signal
10mVPP Input Signal
Input Voltage
(5mV/diV)
Referred-to-Input
Voltage Noise (200nV/div)
Output Voltage
(0.5V/diV)
performance measured with the INA199A3 at TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS / 2 (unless otherwise noted)
VS = ±2.5V
VCM = 0V
VDIF = 0V
VREF = 0V
Time (1s/div)
Time (100ms/div)
Figure 13. 0.1-Hz to 10-Hz Voltage Noise (Referred-to-Input)
Figure 14. Step Response (10-mVPP Input Step)
Output Voltage
0V
2V/div
0V
Output Voltage (40mV/div)
Common-Mode Voltage (1V/div)
Inverting Input Overload
Common Voltage Step
Output
0V
VS = 5V, VCM = 12V, VREF = 2.5V
Time (50ms/div)
Time (250ms/div)
Figure 15. Common-Mode Voltage Transient Response
Figure 16. Inverting Differential Input Overload
Supply Voltage
1V/div
2V/div
Noninverting Input Overload
Output
Output Voltage
0V
0V
VS = 5V, VCM = 12V, VREF = 2.5V
VS = 5V, 1kHz Step with VDIFF = 0V, VREF = 2.5V
Time (250ms/div)
Time (100ms/div)
Figure 17. Noninverting Differential Input Overload
10
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Figure 18. Start-Up Response
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Typical Characteristics (continued)
performance measured with the INA199A3 at TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS / 2 (unless otherwise noted)
1V/div
Supply Voltage
Output Voltage
0V
VS = 5V, 1kHz Step with VDIFF = 0V, VREF = 2.5V
Time (100ms/div)
Figure 19. Brownout Recovery
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8 Detailed Description
8.1 Overview
The INA199 is a 26-V common mode, zero-drift topology, current-sensing amplifier that can be used in both lowside and high-side configurations. The device is a specially-designed, current-sensing amplifier that is able to
accurately measure voltages developed across a current-sensing resistor on common-mode voltages that far
exceed the supply voltage powering the device. Current can be measured on input voltage rails as high as 26 V
and the device can be powered from supply voltages as low as 2.7 V.
The zero-drift topology enables high-precision measurements with maximum input offset voltages as low as
150 µV with a maximum temperature contribution of 0.5 µV/°C over the full temperature range of –40°C to
+125°C.
8.2 Functional Block Diagram
V+
IN-
OUT
IN+
+
REF
GND
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8.3 Feature Description
8.3.1 Basic Connections
Figure 20 shows the basic connections for the INA199. The input pins, IN+ and IN–, must be connected as close
as possible to the shunt resistor to minimize any resistance in series with the shunt resistor.
RSHUNT
Load
Power Supply
5-V Supply
CBYPASS
0.1 µF
V+
IN-
OUT
ADC
Microcontroller
+
IN+
REF
GND
Copyright © 2017, Texas Instruments Incorporated
Figure 20. Typical Application
Power-supply bypass capacitors are required for stability. Applications with noisy or high-impedance power
supplies may require additional decoupling capacitors to reject power-supply noise. Connect bypass capacitors
close to the device pins.
On the RSW package, two pins are provided for each input. These pins must be tied together (that is, tie IN+ to
IN+ and tie IN– to IN–).
8.3.2 Selecting RS
The zero-drift offset performance of the INA199 offers several benefits. Most often, the primary advantage of the
low offset characteristic enables lower full-scale drops across the shunt. For example, non-zero-drift current
shunt monitors typically require a full-scale range of 100 mV.
The INA199 series gives equivalent accuracy at a full-scale range on the order of 10 mV. This accuracy reduces
shunt dissipation by an order of magnitude with many additional benefits.
Alternatively, there are applications that must measure current over a wide dynamic range that can take
advantage of the low offset on the low end of the measurement. Most often, these applications can use the lower
gain of 50 or 100 to accommodate larger shunt drops on the upper end of the scale. For instance, an INA199A1
operating on a 3.3-V supply can easily handle a full-scale shunt drop of 60 mV, with only 150 μV of offset.
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8.4 Device Functional Modes
8.4.1 Input Filtering
An obvious and straightforward filtering location is at the device output. However, this location negates the
advantage of the low output impedance of the internal buffer. The only other filtering option is at the device input
pins. This location, though, does require consideration of the ±30% tolerance of the internal resistances.
Figure 21 shows a filter placed at the inputs pins.
RSHUNT
Bus Supply
Load
Power Supply
CBYPASS
0.1µF
V+
RINT
INRS < 10 Ÿ
Bias
CF
IN+
RINT
RS < 10 Ÿ
OUT
Output
+
REF
GND
Figure 21. Filter at Input Pins
The addition of external series resistance, however, creates an additional error in the measurement so the value
of these series resistors must be kept to 10 Ω (or less if possible) to reduce any affect to accuracy. The internal
bias network shown in Figure 21 present at the input pins creates a mismatch in input bias currents when a
differential voltage is applied between the input pins. If additional external series filter resistors are added to the
circuit, the mismatch in bias currents results in a mismatch of voltage drops across the filter resistors. This
mismatch creates a differential error voltage that subtracts from the voltage developed at the shunt resistor. This
error results in a voltage at the device input pins that is different than the voltage developed across the shunt
resistor. Without the additional series resistance, the mismatch in input bias currents has little effect on device
operation. The amount of error these external filter resistor add to the measurement can be calculated using
Equation 2 where the gain error factor is calculated using Equation 1.
The amount of variance in the differential voltage present at the device input relative to the voltage developed at
the shunt resistor is based both on the external series resistance value as well as the internal input resistors, R3
and R4 (or RINT as shown in Figure 21). The reduction of the shunt voltage reaching the device input pins
appears as a gain error when comparing the output voltage relative to the voltage across the shunt resistor. A
factor can be calculated to determine the amount of gain error that is introduced by the addition of external series
resistance. The equation used to calculate the expected deviation from the shunt voltage to what is seen at the
device input pins is given in Equation 1:
(1250 ´ RINT)
Gain Error Factor =
(1250 ´ RS) + (1250 ´ RINT) + (RS ´ RINT)
where:
•
•
14
RINT is the internal input resistor (R3 and R4).
RS is the external series resistance.
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Device Functional Modes (continued)
With the adjustment factor equation including the device internal input resistance, this factor varies with each
gain version, as listed in Table 1. Each individual device gain error factor is listed in Table 2.
Table 1. Input Resistance
PRODUCT
GAIN
RINT (kΩ)
INA199x1
50
20
INA199x2
100
10
INA199x3
200
5
Table 2. Device Gain Error Factor
PRODUCT
SIMPLIFIED GAIN ERROR FACTOR
20,000
INA199x1
(17 ´ RS) + 20,000
10,000
INA199x2
(9 ´ RS) + 10,000
1000
RS + 1000
INA199x3
The gain error that can be expected from the addition of the external series resistors can then be calculated
based on Equation 2:
Gain Error (%) = 100 - (100 ´ Gain Error Factor)
(2)
For example, using an INA199x2 and the corresponding gain error equation from Table 2, a series resistance of
10-Ω results in a gain error factor of 0.991. The corresponding gain error is then calculated using Equation 2,
resulting in a gain error of approximately 0.89% solely because of the external 10-Ω series resistors. Using an
INA199x1 with the same 10-Ω series resistor results in a gain error factor of 0.991 and a gain error of 0.84%
again solely because of these external resistors.
8.4.2 Shutting Down the INA199 Series
Although the INA199 series does not have a shutdown pin, the low power consumption of the device allows the
output of a logic gate or transistor switch to power the INA199. This gate or switch turns on and turns off the
INA199 power-supply quiescent current.
However, in current shunt monitoring applications, there is also a concern for how much current is drained from
the shunt circuit in shutdown conditions. Evaluating this current drain involves considering the simplified
schematic of the INA199 in shutdown mode shown in Figure 22.
RSHUNT
Supply
Reference
Voltage
OUT
REF
GND
Shutdown
Control
1 MW
R3
1 MW
R4
Output
IN-
IN+
V+
Load
CBYPASS
PRODUCT
R3 AND R4
INA199x1
INA199x2
INA199x3
20 kW
10 kW
5 kW
Copyright © 2017, Texas Instruments Incorporated
NOTE: 1-MΩ paths from shunt inputs to reference and the INA199 outputs.
Figure 22. Basic Circuit for Shutting Down the INA199 With a Grounded Reference
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There is typically slightly more than 1-MΩ impedance (from the combination of 1-MΩ feedback and 5-kΩ input
resistors) from each input of the INA199 to the OUT pin and to the REF pin. The amount of current flowing
through these pins depends on the respective ultimate connection. For example, if the REF pin is grounded, the
calculation of the effect of the 1-MΩ impedance from the shunt to ground is straightforward. However, if the
reference or operational amplifier is powered when the INA199 is shut down, the calculation is direct; instead of
assuming 1-MΩ to ground, however, assume 1-MΩ to the reference voltage. If the reference or operational
amplifier is also shut down, some knowledge of the reference or operational amplifier output impedance under
shutdown conditions is required. For instance, if the reference source functions as an open circuit when not
powered, little or no current flows through the 1-MΩ path.
Regarding the 1-MΩ path to the output pin, the output stage of a disabled INA199 does constitute a good path to
ground. Consequently, this current is directly proportional to a shunt common-mode voltage impressed across a
1-MΩ resistor.
NOTE
When the device is powered up, there is an additional, nearly constant, and well-matched
25 μA that flows in each of the inputs as long as the shunt common-mode voltage is 3 V
or higher. Below 2-V common-mode, the only current effects are the result of the 1-MΩ
resistors.
8.4.3 REF Input Impedance Effects
As with any difference amplifier, the INA199 series common-mode rejection ratio is affected by any impedance
present at the REF input. This concern is not a problem when the REF pin is connected directly to most
references or power supplies. When using resistive dividers from the power supply or a reference voltage, the
REF pin must be buffered by an operational amplifier.
In systems where the INA199 output can be sensed differentially, such as by a differential input analog-to-digital
converter (ADC) or by using two separate ADC inputs, the effects of external impedance on the REF input can
be cancelled. Figure 23 depicts a method of taking the output from the INA199 by using the REF pin as a
reference.
RSHUNT
Supply
Load
ADC
OUT
REF
GND
2.7 V to 26 V
CBYPASS
0.01 mF
to
0.1 mF
R1
R3
R2
R4
Output
IN-
IN+
V+
Figure 23. Sensing the INA199 to Cancel Effects of Impedance on the REF Input
8.4.4 Using the INA199 With Common-Mode Transients Above 26 V
With a small amount of additional circuitry, the INA199 series can be used in circuits subject to transients higher
than 26 V, such as automotive applications. Use only Zener diode or Zener-type transient absorbers (sometimes
referred to as transzorbs); any other type of transient absorber has an unacceptable time delay. Start by adding
a pair of resistors (see Figure 24) as a working impedance for the Zener. Keeping these resistors as small as
possible is preferable, most often approximately 10 Ω. Larger values can be used with an effect on gain as
16
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discussed in the Input Filtering section. Because this circuit limits only short-term transients, many applications
are satisfied with a 10-Ω resistor along with conventional Zener diodes of the lowest power rating that can be
found. This combination uses the least amount of board space. These diodes can be found in packages as small
as SOT-523 or SOD-523. See TIDA-00302 Transient Robustness for Current Shunt Monitor Design Guide,
TIDU473 for more information on transient robustness and current-shunt monitor input protection.
RSHUNT
Supply
RPROTECT
10 W
Load
RPROTECT
10 W
Reference
Voltage
GND
1 MW
R3
1 MW
R4
V+
Shutdown
Control
Output
OUT
REF
IN-
IN+
CBYPASS
Figure 24. INA199 Transient Protection Using Dual Zener Diodes
In the event that low-power zeners do not have sufficient transient absorption capability and a higher power
transzorb must be used, the most package-efficient solution then involves using a single transzorb and back-toback diodes between the device inputs. The most space-efficient solutions are dual series-connected diodes in a
single SOT-523 or SOD-523 package. This method is shown in Figure 25. In either of these examples, the total
board area required by the INA199 with all protective components is less than that of an SO-8 package, and only
slightly greater than that of an MSOP-8 package.
RSHUNT
Supply
RPROTECT
10 W
Load
RPROTECT
10 W
Reference
Voltage
OUT
REF
GND
1 MW
R3
1 MW
R4
V+
Shutdown
Control
Output
IN-
IN+
CBYPASS
Figure 25. INA199 Transient Protection Using a Single Transzorb and Input Clamps
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8.4.5 Improving Transient Robustness
Applications involving large input transients with excessive dV/dt above 2 kV per microsecond present at the
device input pins can cause damage to the internal ESD structures on version A devices. This potential damage
is a result of the internal latching of the ESD structure to ground when this transient occurs at the input. With
significant current available in most current-sensing applications, the large current flowing through the input
transient-triggered, ground-shorted ESD structure quickly results in damage to the silicon. External filtering can
be used to attenuate the transient signal prior to reaching the inputs to avoid the latching condition. Take care to
ensure that external series input resistance does not significantly affect gain error accuracy. For accuracy
purposes, keep the resistance under 10 Ω if possible. Ferrite beads are recommended for this filter because of
their inherently low dc ohmic value. Ferrite beads with less than 10 Ω of resistance at dc and over 600 Ω of
resistance at 100 MHz to 200 MHz are recommended. The recommended capacitor values for this filter are
between 0.01 µF and 0.1 µF to ensure adequate attenuation in the high-frequency region. This protection
scheme is shown in Figure 26. Again, see TIDA-00302 Transient Robustness for Current Shunt Monitor Design
Guide, TIDU473 for more information on transient robustness and current-shunt monitor input protection.
Shunt
Reference
Voltage
Load
Supply
Device
OUT
REF
1 MW
R3
GND
IN-
-
+
MMZ1608B601C
IN+
V+
2.7 V to 26 V
0.01mF
to 0.1mF
Output
1 MW
R4
0.01mF
to 0.1mF
Copyright © 2017, Texas Instruments Incorporated
Figure 26. Transient Protection
To minimize the cost of adding these external components to protect the device in applications where large
transient signals may be present, version B and C devices are now available with new ESD structures that are
not susceptible to this latching condition. Version B and C devices are incapable of sustaining these damagecausing latched conditions so these devices do not have the same sensitivity to the transients that the version A
devices have, thus making the version B and C devices a better fit for these applications.
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The INA199 measures the voltage developed across a current-sensing resistor when current passes through it.
The ability to drive the reference pin to adjust the functionality of the output signal offers multiple configurations,
as discussed throughout this section.
9.2 Typical Applications
9.2.1 Unidirectional Operation
Bus Supply
Load
Power Supply
CBYPASS
0.1 µF
V+
IN-
Output
OUT
+
IN+
REF
GND
Copyright © 2017, Texas Instruments Incorporated
Figure 27. Unidirectional Application Schematic
9.2.1.1 Design Requirements
The device can be configured to monitor current flowing in one direction (unidirectional) or in both directions
(bidirectional) depending on how the REF pin is configured. The most common case is unidirectional where the
output is set to ground when no current is flowing by connecting the REF pin to ground, as shown in Figure 27.
When the input signal increases, the output voltage at the OUT pin increases.
9.2.1.2 Detailed Design Procedure
The linear range of the output stage is limited in how close the output voltage can approach ground under zero
input conditions. In unidirectional applications where measuring very low input currents is desirable, bias the REF
pin to a convenient value above 50 mV to get the output into the linear range of the device. To limit commonmode rejection errors, TI recommends buffering the reference voltage connected to the REF pin.
A less frequently-used output biasing method is to connect the REF pin to the supply voltage, V+. This method
results in the output voltage saturating at 200 mV below the supply voltage when no differential input signal is
present. This method is similar to the output saturated low condition with no input signal when the REF pin is
connected to ground. The output voltage in this configuration only responds to negative currents that develop
negative differential input voltage relative to the device IN– pin. Under these conditions, when the differential
input signal increases negatively, the output voltage moves downward from the saturated supply voltage. The
voltage applied to the REF pin must not exceed the device supply voltage.
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Typical Applications (continued)
9.2.1.3 Application Curve
Output Voltage
(1 V/div)
An example output response of a unidirectional configuration is shown in Figure 28. With the REF pin connected
directly to ground, the output voltage is biased to this zero output level. The output rises above the reference
voltage for positive differential input signals but cannot fall below the reference voltage for negative differential
input signals because of the grounded reference voltage.
0V
Output
VREF
Time (500 µs /div)
C001
Figure 28. Unidirectional Application Output Response
9.2.2 Bidirectional Operation
Load
Bus Supply
Power Supply
CBYPASS
0.1 µF
V+
IN-
Reference
Voltage
OUT
Output
+
+
IN+
REF
-
GND
Copyright © 2017, Texas Instruments Incorporated
Figure 29. Bidirectional Application Schematic
9.2.2.1 Design Requirements
The device is a bidirectional, current-sense amplifier capable of measuring currents through a resistive shunt in
two directions. This bidirectional monitoring is common in applications that include charging and discharging
operations where the current flow-through resistor can change directions.
20
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Typical Applications (continued)
9.2.2.2 Detailed Design Procedure
The ability to measure this current flowing in both directions is enabled by applying a voltage to the REF pin; see
Figure 29. The voltage applied to REF (VREF) sets the output state that corresponds to the zero-input level state.
The output then responds by increasing above VREF for positive differential signals (relative to the IN– pin) and
responds by decreasing below VREF for negative differential signals. This reference voltage applied to the REF
pin can be set anywhere between 0 V to V+. For bidirectional applications, VREF is typically set at mid-scale for
equal signal range in both current directions. In some cases, however, VREF is set at a voltage other than midscale when the bidirectional current and corresponding output signal do not need to be symmetrical.
Output Voltage
(1 V/div)
9.2.2.3 Application Curve
VOUT
VREF
0V
Time (500 µs/div)
C002
Figure 30. Bidirectional Application Output Response
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10 Power Supply Recommendations
The input circuitry of the INA199 can accurately measure beyond its power-supply voltage, V+. For example, the
V+ power supply can be 5 V, whereas the load power-supply voltage can be as high as 26 V. However, the
output voltage range of the OUT pin is limited by the voltages on the power-supply pin. Also, the INA199 can
withstand the full input signal range up to 26-V range in the input pins, regardless of whether the device has
power applied or not.
11 Layout
11.1 Layout Guidelines
•
•
Connect the input pins to the sensing resistor using a kelvin or 4-wire connection. This connection technique
ensures that only the current-sensing resistor impedance is detected between the input pins. Poor routing of
the current-sensing resistor commonly results in additional resistance present between the input pins. Given
the very low ohmic value of the current resistor, any additional high-current carrying impedance can cause
significant measurement errors.
Place the power-supply bypass capacitor as close as possible to the supply and ground pins. TI recommends
using a bypass capacitor with a value of 0.1 μF. Additional decoupling capacitance can be added to
compensate for noisy or high-impedance power supplies.
11.2 Layout Example
Output Signal
Trace
IN+
VIA to Ground Plane
V+
INGND
REF
OUT
VIA to Power or
Ground Plane
Supply
Voltage
Supply Bypass
Capacitor
Copyright © 2017, Texas Instruments Incorporated
Figure 31. Recommended Layout
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation see the following:
• INA199A1-A3EVM User's Guide
• TIDA-00302 Transient Robustness for Current Shunt Monitor
12.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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11-Aug-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
INA199A1DCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
OBG
Samples
INA199A1DCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
OBG
Samples
INA199A1RSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
NSJ
Samples
INA199A1RSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
NSJ
Samples
INA199A2DCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
OBH
Samples
INA199A2DCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
OBH
Samples
INA199A2RSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
NTJ
Samples
INA199A2RSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
NTJ
Samples
INA199A3DCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
OBI
Samples
INA199A3DCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
OBI
Samples
INA199A3RSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
NUJ
Samples
INA199A3RSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
NUJ
Samples
INA199B1DCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
SEB
Samples
INA199B1DCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
SEB
Samples
INA199B1RSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SHV
Samples
INA199B1RSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SHV
Samples
INA199B2DCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
SEG
Samples
INA199B2DCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
SEG
Samples
INA199B2RSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SHW
Samples
INA199B2RSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SHW
Samples
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
11-Aug-2022
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
INA199B3DCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
SHE
Samples
INA199B3DCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
SHE
Samples
INA199B3RSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SHX
Samples
INA199B3RSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SHX
Samples
INA199C1DCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
16L
Samples
INA199C1DCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
16L
Samples
INA199C1RSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
16O
Samples
INA199C1RSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
16O
Samples
INA199C2DCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
16M
Samples
INA199C2DCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
16M
Samples
INA199C2RSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
16P
Samples
INA199C2RSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
16P
Samples
INA199C3DCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
16N
Samples
INA199C3DCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
16N
Samples
INA199C3RSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
16Q
Samples
INA199C3RSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
16Q
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
Addendum-Page 2
PACKAGE OPTION ADDENDUM
www.ti.com
11-Aug-2022
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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