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INA210, INA211, INA212, INA213, INA214, INA215
SBOS437J – MAY 2008 – REVISED FEBRUARY 2017
INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional,
Zero-Drift Series, Current-Shunt Monitors
1 Features
3 Description
•
•
The INA21x are voltage-output, current-shunt
monitors (also called current-sense amplifiers) that
are commonly used for overcurrent protection,
precision-current
measurement
for
system
optimization, or in closed-loop feedback circuits. This
series of devices can sense drops across shunts at
common-mode voltages from –0.3 V to 26 V,
independent of the supply voltage. Six fixed gains are
available: 50 V/V, 75 V/V, 100 V/V, 200 V/V, 500 V/V,
or 1000 V/V. The low offset of the zero-drift
architecture enables current sensing with maximum
drops across the shunt as low as 10-mV full-scale.
1
•
•
•
•
Wide Common-Mode Range: –0.3 V to 26 V
Offset Voltage: ±35 μV (Maximum, INA210)
(Enables Shunt Drops of 10-mV Full-Scale)
Accuracy:
– Gain Error (Maximum Over Temperature):
– ±0.5% (Version C)
– ±1% (Versions A and B)
– 0.5-µV/°C Offset Drift (Maximum)
– 10-ppm/°C Gain Drift (Maximum)
Choice of Gains:
– INA210: 200 V/V
– INA211: 500 V/V
– INA212: 1000 V/V
– INA213: 50 V/V
– INA214: 100 V/V
– INA215: 75 V/V
Quiescent Current: 100 μA (Maximum)
SC70 and Thin UQFN Packages: All Models
These devices operate from a single 2.7-V to 26-V
power supply, drawing a maximum of 100 µA of
supply current. All versions are specified over the
extended
operating
temperature
range
(–40°C to +125°C), and offered in SC70 and UQFN
packages.
Device Information(1)
PART NUMBER
INA21x
2 Applications
•
•
•
•
•
PACKAGE
BODY SIZE (NOM)
SC70 (6)
2.00 mm × 1.25 mm
UQFN (10)
1.80 mm × 1.40 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Notebook Computers
Cell Phones
Telecom Equipment
Power Management
Battery Chargers
Simplified Schematic
REF
GND
2.7 V to 26 V
CBYPASS
0.01 mF
to
0.1 mF
RSHUNT
Supply
Reference
Voltage
INA21x
Output
OUT
R1
R3
R2
R4
IN-
IN+
V+
SC70
Load
PRODUCT
GAIN
R3 and R4
R1 and R2
INA210
INA211
INA212
INA213
INA214
INA215
200
500
1000
50
100
75
5 kW
2 kW
1 kW
20 kW
10 kW
13.3 kW
1 MW
1 MW
1 MW
1 MW
1 MW
1 MW
VOUT = (ILOAD ´ RSHUNT) Gain + VREF
Copyright © 2017, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
INA210, INA211, INA212, INA213, INA214, INA215
SBOS437J – MAY 2008 – REVISED FEBRUARY 2017
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configurations and Functions .......................
Specifications.........................................................
6.1
6.2
6.3
6.4
6.5
6.6
7
1
1
1
2
5
6
Absolute Maximum Ratings ...................................... 6
ESD Ratings.............................................................. 6
Recommended Operating Conditions....................... 6
Thermal Information .................................................. 7
Electrical Characteristics........................................... 8
Typical Characteristics ............................................ 10
Detailed Description ............................................ 14
7.1
7.2
7.3
7.4
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
14
14
15
16
8
Application and Implementation ........................ 22
8.1 Application Information............................................ 22
8.2 Typical Applications ................................................ 22
9 Power Supply Recommendations...................... 25
10 Layout................................................................... 25
10.1 Layout Guidelines ................................................. 25
10.2 Layout Example .................................................... 26
11 Device and Documentation Support ................. 27
11.1
11.2
11.3
11.4
11.5
11.6
11.7
Documentation Support ........................................
Related Links ........................................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
27
27
27
27
27
27
27
12 Mechanical, Packaging, and Orderable
Information ........................................................... 28
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision I (September 2016) to Revision J
Page
•
Added 2017 copyright to front page graphic ......................................................................................................................... 1
•
Deleted Device Options table ................................................................................................................................................ 5
•
Added Common-mode analog inputs (Versions B and C) to Absolute Maximum Ratings table ........................................... 6
•
Changed HBM ESD value (Version A) from 4000 to 2000 V in ESD Ratings table ............................................................. 6
•
Changed formatting of Thermal Information table note.......................................................................................................... 7
•
Deleted static literature number from document reference in Related Documentation section .......................................... 27
Changes from Revision H (June 2016) to Revision I
•
Page
Deleted all notes regarding preview devices throughout data sheet; all devices now active................................................. 1
Changes from Revision G (July 2014) to Revision H
Page
•
Changed Features section: deleted last bullet, changed packages bullet ............................................................................ 1
•
Deleted last Applications bullet .............................................................................................................................................. 1
•
Changed Description section.................................................................................................................................................. 1
•
Changed Device Information table ........................................................................................................................................ 1
•
Moved storage temperature to Absolute Maximum Ratings table ........................................................................................ 6
•
Changed ESD Ratings table: changed title, changed format to current standards ............................................................... 6
•
Deleted both Machine Model rows from ESD Ratings table ................................................................................................. 6
•
Changed first sentence referencing Equation 1 in Input Filtering section: replaced seen with measured .......................... 16
•
Changed second sentence referencing Equation 1 in Input Filtering section ..................................................................... 17
•
Corrected punctuation and added clarity to first and second paragraphs in Shutting Down the INA21x Series section .... 18
•
Changed impressed to present in fourth paragraph of Shutting Down the INA21x Series section ..................................... 18
2
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SBOS437J – MAY 2008 – REVISED FEBRUARY 2017
Changes from Revision F (June 2014) to Revision G
Page
•
Changed Simplified Schematic: added equation below gain table......................................................................................... 1
•
Changed V(ESD) HBM specifications for version A in Handling Ratings table......................................................................... 6
Changes from Revision E (June 2013) to Revision F
Page
•
Changed format to meet latest data sheet standards; added Pin Functions, Recommended Operating Conditions,
and Thermal Information tables, Overview, Functional Block Diagram, Application Information, Power Supply
Recommendations, and Layout sections, and moved existing sections ................................................................................ 1
•
Added INA215 to document .................................................................................................................................................. 1
•
Added INA215 sub-bullet to fourth Features bullet ............................................................................................................... 1
•
Added INA215 to simplified schematic table ......................................................................................................................... 1
•
Added Thermal Information table ........................................................................................................................................... 6
•
Added INA215 to Figure 7 .................................................................................................................................................... 10
•
Added INA215 to Figure 15 .................................................................................................................................................. 11
•
Added INA215 to Figure 25 .................................................................................................................................................. 18
Changes from Revision D (November 2012) to Revision E
Page
Changes from Revision C (August 2012) to Revision D
Page
•
Changed Frequency Response, Bandwidth parameter in Electrical Characteristics table .................................................... 6
Changes from Revision B (June 2009) to Revision C
Page
•
Added silicon version B row to Input, Common-Mode Input Range parameter in Electrical Characteristics table................ 6
•
Added silicon version B ESD ratings to Abs Max table.......................................................................................................... 6
•
Corrected typo in Figure 9 ................................................................................................................................................... 10
•
Updated Figure 12 ............................................................................................................................................................... 10
•
Changed Input Filtering section............................................................................................................................................ 16
•
Added Improving Transient Robustness section .................................................................................................................. 21
Changes from Revision A (June 2008) to Revision B
Page
•
Added RSW package to device photo.................................................................................................................................... 1
•
Added UQFN package to Features list................................................................................................................................... 1
•
Updated front page graphic .................................................................................................................................................... 1
•
Added RSW package pin out drawing.................................................................................................................................... 5
•
Added footnote 3 to Electrical Characteristics table............................................................................................................... 6
•
Added UQFN package information to Temperature Range section of Electrical Characteristics table ................................. 6
•
Changed Figure 2 to reflect operating temperature range ................................................................................................... 10
•
Changed Figure 4 to reflect operating temperature range ................................................................................................... 10
•
Changed Figure 6 to reflect operating temperature range ................................................................................................... 10
•
Changed Figure 13 to reflect operating temperature range ................................................................................................. 11
•
Changed Figure 14 to reflect operating temperature range ................................................................................................. 11
•
Added RSW description to the Basic Connections section .................................................................................................. 15
•
Changed 60 μV to 100 μV in last sentence of the Selecting RS section ............................................................................. 15
Copyright © 2008–2017, Texas Instruments Incorporated
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3
INA210, INA211, INA212, INA213, INA214, INA215
SBOS437J – MAY 2008 – REVISED FEBRUARY 2017
www.ti.com
Changes from Original (May 2008) to Revision A
Page
•
Deleted first footnote of Electrical Characteristics table ......................................................................................................... 6
•
Changed Figure 7 ................................................................................................................................................................ 10
•
Changed Figure 15 .............................................................................................................................................................. 11
4
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Product Folder Links: INA210 INA211 INA212 INA213 INA214 INA215
INA210, INA211, INA212, INA213, INA214, INA215
www.ti.com
SBOS437J – MAY 2008 – REVISED FEBRUARY 2017
5 Pin Configurations and Functions
DCK Package
6-Pin SC70
Top View
RSW Package
10-Pin Thin UQFN
Top View
REF
1
6
OUT
GND
2
5
IN-
V+
3
4
NC
REF
8
GND
9
OUT
10
(1)
7
V+
6
5
IN-
4
IN-
3
IN+
IN+
1
NC
(1)
(1)
2
IN+
NC denotes no internal connection. These
pins can be left floating or connected to any
voltage between V– and V+.
Pin Functions
PIN
NAME
I/O
DESCRIPTION
DCK
RSW
GND
2
9
Analog
Ground
IN–
5
4, 5
Analog
input
Connect to load side of shunt resistor
IN+
4
2, 3
Analog
input
Connect to supply side of shunt resistor
NC
—
1, 7
—
Output voltage
Not internally connected. Leave floating or connect to ground.
OUT
6
10
Analog
output
REF
1
8
Analog
input
Reference voltage, 0 V to V+
V+
3
6
Analog
Power supply, 2.7 V to 26 V
Copyright © 2008–2017, Texas Instruments Incorporated
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INA210, INA211, INA212, INA213, INA214, INA215
SBOS437J – MAY 2008 – REVISED FEBRUARY 2017
www.ti.com
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
UNIT
26
V
–26
26
V
(3)
GND – 0.3
26
V
Common-mode (Version B) (3)
GND – 0.1
26
V
Common-mode (Version C) (3)
GND – 0.1
26
V
GND – 0.3
(VS) + 0.3
V
GND – 0.3
(VS) + 0.3
V
5
mA
150
°C
150
°C
150
°C
Supply voltage, VS
Differential (VIN+) – (VIN–)
Common-mode (Version A)
Analog inputs, VIN+, VIN– (2)
REF input
Output
(3)
Input current into any terminal (3)
Operating temperature
–55
Junction temperature
Storage temperature, Tstg
(1)
(2)
(3)
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively.
Input voltage at any terminal may exceed the voltage shown if the current at that pin is limited to 5 mA.
6.2 ESD Ratings
VALUE
UNIT
INA21x, (VERSION A)
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±1000
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±3500
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±1000
V
INA21x, (VERSIONS B AND C)
V(ESD)
(1)
(2)
Electrostatic discharge
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
VCM
Common-mode input voltage
VS
Operating supply voltage
TA
Operating free-air temperature
6
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NOM
MAX
12
V
5
–40
UNIT
V
125
°C
Copyright © 2008–2017, Texas Instruments Incorporated
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SBOS437J – MAY 2008 – REVISED FEBRUARY 2017
6.4 Thermal Information
INA21x
THERMAL METRIC (1)
DCK (SC70)
RSW (UQFN)
6 PINS
10 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
227.3
107.3
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
79.5
56.5
°C/W
RθJB
Junction-to-board thermal resistance
72.1
18.7
°C/W
ψJT
Junction-to-top characterization parameter
3.6
1.1
°C/W
ψJB
Junction-to-board characterization parameter
70.4
18.7
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
N/A
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
Copyright © 2008–2017, Texas Instruments Incorporated
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INA210, INA211, INA212, INA213, INA214, INA215
SBOS437J – MAY 2008 – REVISED FEBRUARY 2017
www.ti.com
6.5 Electrical Characteristics
at TA = 25°C, VSENSE = VIN+ – VIN–
INA210, INA213, INA214, and INA215: VS = 5 V, VIN+ = 12 V, and VREF = VS / 2, unless otherwise noted
INA211 and INA212: VS = 12 V, VIN+ = 12 V, and VREF = VS / 2, unless otherwise noted
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT
VCM
Version A
TA = –40°C to +125°C
–0.3
26
Versions B and C
TA = –40°C to +125°C
–0.1
26
INA210, INA211,
INA212, INA214,
INA215
VIN+ = 0 V to 26 V VSENSE = 0 mV
TA = –40°C to +125°C
105
INA213
VIN+ = 0 V to 26 V VSENSE = 0 mV
TA = –40°C to +125°C
100
INA210, INA211,
INA212
VSENSE = 0 mV
±0.55
±35
INA213
VSENSE = 0 mV
±5
±100
INA214, INA215
VSENSE = 0 mV
±1
±60
0.1
0.5
µV/°C
±0.1
±10
µV/V
28
35
µA
Common-mode input range
Common-mode
rejection ratio
CMRR
VO
Offset voltage, RTI
V
140
dB
120
(1)
dVOS/dT
RTI vs temperature
VSENSE = 0 mV
TA = –40°C to +125°C
PSRR
RTI vs power supply ratio
VS = 2.7 V to 18 V
VIN+ = 18 V
VSENSE = 0 mV
IIB
Input bias current
VSENSE = 0 mV
IIO
Input offset current
VSENSE = 0 mV
15
±0.02
µV
µA
OUTPUT
INA210
G
Gain
200
INA211
500
INA212
1000
INA213
50
INA214
100
INA215
EG
Gain error
V/V
75
VSENSE = –5 mV to 5 mV
TA = –40°C to +125°C
(Versions A and B)
±0.02%
±1%
VSENSE = –5 mV to 5 mV
TA = –40°C to +125°C
(Version C)
±0.02%
±0.5%
3
10
Gain error vs temperature
TA = –40°C to +125°C
Nonlinearity error
VSENSE = –5 mV to 5 mV
Maximum capacitive load
No sustained oscillation
ppm/°C
±0.01%
1
nF
VOLTAGE OUTPUT (2)
Swing to V+ power-supply rail
RL = 10 kΩ to GND
TA = –40°C to +125°C
(V+) – 0.05
(V+) – 0.2
V
Swing to GND
RL = 10 kΩ to GND
TA = –40°C to +125°C
(VGND) + 0.005
(VGND) + 0.05
V
FREQUENCY RESPONSE
BW
Bandwidth
CLOAD = 10 pF, INA210
14
CLOAD = 10 pF, INA211
7
CLOAD = 10 pF, INA212
4
CLOAD = 10 pF, INA213
80
CLOAD = 10 pF, INA214
30
CLOAD = 10 pF, INA215
SR
kHz
40
Slew rate
0.4
V/µs
25
nV/√Hz
NOISE, RTI (1)
Voltage noise density
(1)
(2)
8
RTI = referred-to-input.
See Typical Characteristic curve, Output Voltage Swing vs Output Current (Figure 10).
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SBOS437J – MAY 2008 – REVISED FEBRUARY 2017
Electrical Characteristics (continued)
at TA = 25°C, VSENSE = VIN+ – VIN–
INA210, INA213, INA214, and INA215: VS = 5 V, VIN+ = 12 V, and VREF = VS / 2, unless otherwise noted
INA211 and INA212: VS = 12 V, VIN+ = 12 V, and VREF = VS / 2, unless otherwise noted
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
26
V
65
100
µA
115
µA
°C
POWER SUPPLY
VS
Operating voltage range
TA = –40°C to +125°C
IQ
Quiescent current
VSENSE = 0 mV
IQ over temperature
TA = –40°C to +125°C
2.7
TEMPERATURE RANGE
θJA
Specified range
–40
125
Operating range
–55
150
Thermal resistance
SC70
Thin UQFN
Copyright © 2008–2017, Texas Instruments Incorporated
°C/W
80
°C/W
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°C
250
9
INA210, INA211, INA212, INA213, INA214, INA215
SBOS437J – MAY 2008 – REVISED FEBRUARY 2017
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6.6 Typical Characteristics
The INA210 is used for typical characteristics at TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS / 2, unless otherwise noted.
100
80
Population
Offset Voltage (mV)
60
40
20
0
-20
-40
-60
35
25
30
15
20
5
10
0
-5
-10
-15
-20
-25
-30
-35
-80
-100
-50
-25
0
Offset Voltage (mV)
25
50
75
100
125
150
Temperature (°C)
Figure 1. Input Offset Voltage Production Distribution
Figure 2. Offset Voltage vs Temperature
5
4
Population
CMRR (mV/V)
3
2
1
0
-1
-2
-3
-4
-5.0
-4.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-5
-50
-25
0
25
50
75
100
125
150
Temperature (°C)
Common-Mode Rejection Ratio (mV/V)
Figure 4. Common-Mode Rejection Ratio vs Temperature
Figure 3. Common-Mode Rejection Production Distribution
1.0
0.8
Population
Gain Error (%)
0.6
0.4
0.2
0
–0.2
–0.4
–0.6
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
–0.8
Gain Error (%)
Figure 5. Gain Error Production Distribution
10
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–1.0
–50
–25
0
25
50
75
100
125
150
Temperature (°C)
Figure 6. Gain Error vs Temperature
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SBOS437J – MAY 2008 – REVISED FEBRUARY 2017
Typical Characteristics (continued)
The INA210 is used for typical characteristics at TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS / 2, unless otherwise noted.
70
160
INA210
INA212
INA214
Gain (dB)
50
Power-Supply Rejection Ratio (dB)
60
INA211
INA213
INA215
40
30
20
10
0
140
120
100
80
60
40
20
0
-10
10
100
1k
10k
100k
1M
10M
1
100
10
Frequency (Hz)
VCM = 0 V
Figure 7. Gain vs Frequency
Output Voltage Swing (V)
Common-Mode Rejection Ratio (db)
140
120
100
80
60
40
20
0
10
100
1k
10k
100k
V+
(V+) – 0.5
(V+) – 1
(V+) – 1.5
(V+) – 2
(V+) – 2.5
(V+) – 3
GND + 3
GND + 2.5
GND + 2
GND + 1.5
GND + 1
GND + 0.5
GND
TA = – 40C
TA = 25C
TA = 125C
0
1M
5
10
VCM = 1 V sine
VREF = 2.5 V
VDIF = shorted
VS = 2.7 V
40
25
Input Bias Current (mA)
Input Bias Current (µA)
30
30
20
10
0
0V
2.5V
–10
10
15
20
25
30
35
40
20
25
30
VS = 2.7 V
VS = 2.7 V to 26 V
20
15
10
5
0
0V
2.5V
-5
0
5
Common-Mode Voltage (V)
IB+, IB–, VREF = 0 V
IB+, IB–, VREF = 2.5 V
Figure 11. Input Bias Current vs Common-Mode Voltage
With Supply Voltage = 5 V
Copyright © 2008–2017, Texas Instruments Incorporated
VS = 5 V to 26 V
Figure 10. Output Voltage Swing vs Output Current
50
5
15
Output Current (mA)
Figure 9. Common-Mode Rejection Ratio vs Frequency
0
100k
VS = 5 V + 250-mV sine disturbance
VREF = 2.5 V
VDIF = shorted
Frequency (Hz)
VS = 5 V
10k
Figure 8. Power-Supply Rejection Ratio vs Frequency
160
1
1k
Frequency (Hz)
10
15
20
25
30
Common-Mode Voltage (V)
IB+, IB–, VREF = 0 V
IB+, IB–,
VREF = 2.5 V
IB+, VREF = 2.5 V
Figure 12. Input Bias Current vs Common-Mode Voltage
With Supply Voltage = 0 V (Shutdown)
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Typical Characteristics (continued)
The INA210 is used for typical characteristics at TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS / 2, unless otherwise noted.
35
100
90
Quiescent Current (μA)
Input Bias Current (µA)
30
25
20
15
10
5
80
70
60
50
40
30
20
10
0
–50
–25
0
25
50
75
100
125
0
–50
150
–25
Temperature (°C)
0
25
50
75
100
125
150
Temperature (°C)
Figure 13. Input Bias Current vs Temperature
Figure 14. Quiescent Current vs Temperature
Referred-to-Input
Voltage Noise (200nV/div)
10
INA210
INA212
INA214
1
10
INA211
INA213
INA215
100
1k
10k
Frequency (Hz)
VS = 2.5 V
VREF = 0 V
VIN–, VIN+ = 0 V
Figure 15. Input-Referred Voltage Noise vs Frequency
Input Voltage
(5mV/diV)
Figure 17. Step Response (10-mVPP Input Step)
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VS = 2.5 V
VREF = 0 V
VCM = 0 V
VDIF = 0 V
Figure 16. 0.1-Hz to 10-Hz Voltage Noise (Referred-To-Input)
Output Voltage
Common Voltage
Output Voltage (40mV/div)
Output Voltage
(0.5V/diV)
2VPP Output
10mVPP Input
Time (100ms/div)
12
Time (1s/div)
100k
Common-Mode Voltage (1V/div)
Input-Reffered Voltage Noise (nV/Öz)
100
0V
0V
Time (50μs/div)
Figure 18. Common-Mode Voltage Transient Response
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Typical Characteristics (continued)
The INA210 is used for typical characteristics at TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS / 2, unless otherwise noted.
Noninverting Input
Output
2V/div
2V/div
Inverting Input
Output
0V
0V
Time (250μs/div)
VS = 5 V
VCM = 12 V
Time (250μs/div)
VREF = 2.5 V
VS = 5 V
Figure 19. Inverting Differential Input Overload
VCM = 12 V
Figure 20. Noninverting Differential Input Overload
Supply Voltage
Output Voltage
Supply Voltage
Output Voltage
1V/div
1V/div
VREF = 2.5 V
0V
0V
Time (100μs/div)
Time (100μs/div)
VS = 5 V
1-kHz step with VDIFF
=0V
VREF = 0 V
Figure 21. Start-Up Response
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VS = 5 V
1-kHz step with
VDIFF = 0 V
VREF = 2.5 V
Figure 22. Brownout Recovery
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7 Detailed Description
7.1 Overview
The INA21x are 26-V, common-mode, zero-drift topology, current-sensing amplifiers that can be used in both
low-side and high-side configurations. These specially-designed, current-sensing amplifiers are able to accurately
measure voltages developed across current-sensing resistors on common-mode voltages that far exceed the
supply voltage powering the device. Current can be measured on input voltage rails as high as 26 V while the
device can be powered from supply voltages as low as 2.7 V.
The zero-drift topology enables high-precision measurements with maximum input offset voltages as low as
35 µV with a maximum temperature contribution of 0.5 µV/°C over the full temperature range of –40°C to
+125°C.
7.2 Functional Block Diagram
V+
-
IN-
OUT
+
IN+
REF
GND
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7.3 Feature Description
7.3.1 Basic Connections
Figure 23 shows the basic connections of the INA21x. Connect the input pins (IN+ and IN–) as closely as
possible to the shunt resistor to minimize any resistance in series with the shunt resistor.
RSHUNT
Load
Power Supply
5-V Supply
CBYPASS
0.1 µF
V+
IN-
OUT
ADC
Microcontroller
+
IN+
REF
GND
Copyright © 2017, Texas Instruments Incorporated
Figure 23. Typical Application
Power-supply bypass capacitors are required for stability. Applications with noisy or high-impedance power
supplies may require additional decoupling capacitors to reject power-supply noise. Connect bypass capacitors
close to the device pins.
On the RSW package options, two pins are provided for each input. Tie these pins together (that is, tie IN+ to
IN+ and tie IN– to IN–).
7.3.2 Selecting RS
The zero-drift offset performance of the INA21x offers several benefits. Most often, the primary advantage of the
low offset characteristic enables lower full-scale drops across the shunt. For example, non-zero-drift current
shunt monitors typically require a full-scale range of 100 mV.
The INA21x series gives equivalent accuracy at a full-scale range on the order of 10 mV. This accuracy reduces
shunt dissipation by an order of magnitude with many additional benefits.
Alternatively, there are applications that must measure current over a wide dynamic range that can take
advantage of the low offset on the low end of the measurement. Most often, these applications can use the lower
gains of the INA213, INA214, or INA215 to accommodate larger shunt drops on the upper end of the scale. For
instance, an INA213 operating on a 3.3-V supply can easily handle a full-scale shunt drop of 60 mV, with only
100 μV of offset.
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7.4 Device Functional Modes
7.4.1 Input Filtering
An obvious and straightforward filtering location is at the device output. However, this location negates the
advantage of the low output impedance of the internal buffer. The only other filtering option is at the device input
pins. This location, though, does require consideration of the ±30% tolerance of the internal resistances.
Figure 24 shows a filter placed at the inputs pins.
V+
VCM
RS < 10 W
RINT
VOUT
RSHUNT
CF
Bias
RS < 10 W
VREF
RINT
Load
Figure 24. Filter at Input Pins
The addition of external series resistance, however, creates an additional error in the measurement so the value
of these series resistors must be kept to 10 Ω (or less, if possible) to reduce impact to accuracy. The internal
bias network shown in Figure 24 present at the input pins creates a mismatch in input bias currents when a
differential voltage is applied between the input pins. If additional external series filter resistors are added to the
circuit, the mismatch in bias currents results in a mismatch of voltage drops across the filter resistors. This
mismatch creates a differential error voltage that subtracts from the voltage developed at the shunt resistor. This
error results in a voltage at the device input pins that is different than the voltage developed across the shunt
resistor. Without the additional series resistance, the mismatch in input bias currents has little effect on device
operation. The amount of error these external filter resistors add to the measurement can be calculated using
Equation 2 where the gain error factor is calculated using Equation 1.
The amount of variance in the differential voltage present at the device input relative to the voltage developed at
the shunt resistor is based both on the external series resistance value as well as the internal input resistors, R3
and R4 (or RINT as shown in Figure 24). The reduction of the shunt voltage reaching the device input pins
appears as a gain error when comparing the output voltage relative to the voltage across the shunt resistor. A
factor can be calculated to determine the amount of gain error that is introduced by the addition of external series
resistance. The equation used to calculate the expected deviation from the shunt voltage to what is measured at
the device input pins is given in Equation 1:
(1250 ´ RINT)
Gain Error Factor =
(1250 ´ RS) + (1250 ´ RINT) + (RS ´ RINT)
where:
•
•
16
RINT is the internal input resistor (R3 and R4), and
RS is the external series resistance.
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Device Functional Modes (continued)
With the adjustment factor from Equation 1, including the device internal input resistance, this factor varies with
each gain version, as shown in Table 1. Each individual device gain error factor is shown in Table 2.
Table 1. Input Resistance
PRODUCT
GAIN
RINT (kΩ)
INA210
200
5
INA211
500
2
INA212
1000
1
INA213
50
20
INA214
100
10
INA215
75
13.3
Table 2. Device Gain Error Factor
PRODUCT
SIMPLIFIED GAIN ERROR FACTOR
INA210
1000
RS + 1000
10,000
INA211
(13 ´ RS) + 10,000
5000
INA212
(9 ´ RS) + 5000
20,000
INA213
(17 ´ RS) + 20,000
10,000
INA214
(9 ´ RS) + 10,000
8,000
INA215
(7 x RS) + 8,000
The gain error that can be expected from the addition of the external series resistors can then be calculated
based on Equation 2:
Gain Error (%) = 100 - (100 ´ Gain Error Factor)
(2)
For example, using an INA212 and the corresponding gain error equation from Table 2, a series resistance of
10 Ω results in a gain error factor of 0.982. The corresponding gain error is then calculated using Equation 2,
resulting in a gain error of approximately 1.77% solely because of the external 10-Ω series resistors. Using an
INA213 with the same 10-Ω series resistor results in a gain error factor of 0.991 and a gain error of 0.84% again
solely because of these external resistors.
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7.4.2 Shutting Down the INA21x Series
Although the INA21x series does not have a shutdown pin, the low power consumption of the device allows the
output of a logic gate or transistor switch to power the INA21x. This gate or switch turns on and turns off the
INA21x power-supply quiescent current.
However, in current shunt monitoring applications, there is also a concern for how much current is drained from
the shunt circuit in shutdown conditions. Evaluating this current drain involves considering the simplified
schematic of the INA21x in shutdown mode, as shown in Figure 25.
Shutdown
Control
RSHUNT
Supply
Reference
Voltage
REF
INA21x
GND
1 MW
R3
1 MW
R4
Load
Output
OUT
IN-
IN+
V+
CBYPASS
PRODUCT
R3 and R4
INA210
INA211
INA212
INA213
INA214
INA215
5 kW
2 kW
1 kW
20 kW
10 kW
13.3 kW
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NOTE: 1-MΩ paths from shunt inputs to reference and INA21x outputs.
Figure 25. Basic Circuit for Shutting Down The INA21x With a Grounded Reference
Note that there is typically slightly more than 1-MΩ impedance (from the combination of 1-MΩ feedback and
5-kΩ input resistors) from each input of the INA21x to the OUT pin and to the REF pin. The amount of current
flowing through these pins depends on the respective ultimate connection. For example, if the REF pin is
grounded, the calculation of the effect of the 1-MΩ impedance from the shunt to ground is straightforward.
However, if the reference or op amp is powered while the INA21x is shut down, the calculation is direct; instead
of assuming 1 MΩ to ground, however, assume 1 MΩ to the reference voltage. If the reference or op amp is also
shut down, some knowledge of the reference or op amp output impedance under shutdown conditions is
required. For instance, if the reference source behaves as an open circuit when not powered, little or no current
flows through the 1-MΩ path.
Regarding the 1-MΩ path to the output pin, the output stage of a disabled INA21x does constitute a good path to
ground. Consequently, this current is directly proportional to a shunt common-mode voltage present across a 1MΩ resistor.
As a final note, when the device is powered up, there is an additional, nearly constant, and well-matched 25 μA
that flows in each of the inputs as long as the shunt common-mode voltage is 3 V or higher. Below 2-V commonmode, the only current effects are the result of the 1-MΩ resistors.
18
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7.4.3 REF Input Impedance Effects
As with any difference amplifier, the INA21x series common-mode rejection ratio is affected by any impedance
present at the REF input. This concern is not a problem when the REF pin is connected directly to most
references or power supplies. When using resistive dividers from the power supply or a reference voltage, the
REF pin must be buffered by an op amp.
In systems where the INA21x output can be sensed differentially, such as by a differential input analog-to-digital
converter (ADC) or by using two separate ADC inputs, the effects of external impedance on the REF input can
be cancelled. Figure 26 depicts a method of taking the output from the INA21x by using the REF pin as a
reference.
RSHUNT
Supply
Load
ADC
REF
GND
2.7 V to 26 V
Device
OUT
R1
R3
R2
R4
IN-
IN+
V+
CBYPASS
0.01 mF
to
0.1 mF
Output
Copyright © 2017, Texas Instruments Incorporated
Figure 26. Sensing the INA21x to Cancel the Effects of Impedance on the REF Input
7.4.4 Using The INA21x With Common-Mode Transients Above 26 V
With a small amount of additional circuitry, the INA21x series can be used in circuits subject to transients higher
than 26 V, such as automotive applications. Use only zener diode or zener-type transient absorbers (sometimes
referred to as transzorbs) ;any other type of transient absorber has an unacceptable time delay. Start by adding
a pair of resistors as a working impedance for the zener; see Figure 27. Keeping these resistors as small as
possible is preferable, typically around 10 Ω. Larger values can be used with an effect on gain that is discussed
in the Input Filtering section. Because this circuit limits only short-term transients, many applications are satisfied
with a 10-Ω resistor along with conventional zener diodes of the lowest power rating that can be found. This
combination uses the least amount of board space. These diodes can be found in packages as small as SOT523 or SOD-523.
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RSHUNT
Supply
RPROTECT
10 W
Load
RPROTECT
10 W
Reference
Voltage
REF
Device
GND
1 MW
R3
1 MW
R4
V+
Shutdown
Control
Output
OUT
IN-
IN+
CBYPASS
Copyright © 2017, Texas Instruments Incorporated
Figure 27. INA21x Transient Protection Using Dual Zener Diodes
In the event that low-power zeners do not have sufficient transient absorption capability and a higher power
transzorb must be used, the most package-efficient solution then involves using a single transzorb and back-toback diodes between the device inputs. The most space-efficient solutions are dual series-connected diodes in a
single SOT-523 or SOD-523 package. This method is shown in Figure 28. In either of these examples, the total
board area required by the INA21x with all protective components is less than that of an SO-8 package, and only
slightly greater than that of an MSOP-8 package.
RSHUNT
Supply
RPROTECT
10 W
Load
RPROTECT
10 W
Reference
Voltage
REF
Device
GND
1 MW
R3
1 MW
R4
OUT
V+
Shutdown
Control
Output
IN-
IN+
CBYPASS
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Figure 28. INA21x Transient Protection Using a Single Transzorb and Input Clamps
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7.4.5 Improving Transient Robustness
Applications involving large input transients with excessive dV/dt above 2 kV per microsecond present at the
device input pins may cause damage to the internal ESD structures on version A devices. This potential damage
is a result of the internal latching of the ESD structure to ground when this transient occurs at the input. With
significant current available in most current-sensing applications, the large current flowing through the input
transient-triggered, ground-shorted ESD structure quickly results in damage to the silicon. External filtering can
be used to attenuate the transient signal prior to reaching the inputs to avoid the latching condition. Care must be
taken to ensure that external series input resistance does not significantly impact gain error accuracy. For
accuracy purposes, keep these resistances under 10 Ω if possible. Ferrite beads are recommended for this filter
because of their inherently low dc ohmic value. Ferrite beads with less than 10 Ω of resistance at dc and over
600 Ω of resistance at 100 MHz to 200 MHz are recommended. The recommended capacitor values for this filter
are between 0.01 µF and 0.1 µF to ensure adequate attenuation in the high-frequency region. This protection
scheme is shown in Figure 29.
Shunt
Reference
Voltage
Load
Supply
Device
OUT
REF
1 MW
R3
GND
IN-
-
+
MMZ1608B601C
IN+
V+
2.7 V to 26 V
1 MW
0.01mF
to 0.1mF
Output
R4
0.01mF
to 0.1mF
Copyright © 2017, Texas Instruments Incorporated
Figure 29. Transient Protection
To minimize the cost of adding these external components to protect the device in applications where large
transient signals may be present, version B and C devices are now available with new ESD structures that are
not susceptible to this latching condition. Version B and C devices are incapable of sustaining these damagecausing latched conditions so these devices do not have the same sensitivity to the transients that the version A
devices have, thus making the version B and C devices a better fit for these applications.
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The INA21x devices measure the voltage developed across a current-sensing resistor when current passes
through the device. The ability to drive the reference pin to adjust the functionality of the output signal offers
multiple configurations, as discussed throughout this section.
8.2 Typical Applications
8.2.1 Unidirectional Operation
Bus Supply
Load
Power Supply
CBYPASS
0.1 µF
V+
IN-
Output
OUT
+
IN+
REF
GND
Copyright © 2017, Texas Instruments Incorporated
Figure 30. Unidirectional Application Schematic
8.2.1.1 Design Requirements
The device can be configured to monitor current flowing in one direction (unidirectional) or in both directions
(bidirectional) depending on how the REF pin is configured. The most common case is unidirectional where the
output is set to ground when no current is flowing by connecting the REF pin to ground, as shown in Figure 30.
When the input signal increases, the output voltage at the OUT pin increases.
8.2.1.2 Detailed Design Procedure
The linear range of the output stage is limited in how close the output voltage can approach ground under zero
input conditions. In unidirectional applications where measuring very low input currents is desirable, bias the REF
pin to a convenient value above 50 mV to get the output into the linear range of the device. To limit commonmode rejection errors, TI recommends buffering the reference voltage connected to the REF pin.
A less frequently-used output biasing method is to connect the REF pin to the supply voltage, V+. This method
results in the output voltage saturating at 200 mV below the supply voltage when no differential input signal is
present. This method is similar to the output saturated low condition with no input signal when the REF pin is
connected to ground. The output voltage in this configuration only responds to negative currents that develop
negative differential input voltage relative to the device IN– pin. Under these conditions, when the differential
input signal increases negatively, the output voltage moves downward from the saturated supply voltage. The
voltage applied to the REF pin must not exceed the device supply voltage.
22
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Typical Applications (continued)
8.2.1.3 Application Curve
Output Voltage
(1 V/div)
An example output response of a unidirectional configuration is shown in Figure 31. With the REF pin connected
directly to ground, the output voltage is biased to this zero output level. The output rises above the reference
voltage for positive differential input signals but cannot fall below the reference voltage for negative differential
input signals because of the grounded reference voltage.
0V
Output
VREF
Time (500 µs /div)
C001
Figure 31. Unidirectional Application Output Response
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Typical Applications (continued)
8.2.2 Bidirectional Operation
Load
Bus Supply
Power Supply
CBYPASS
0.1 µF
V+
IN-
Reference
Voltage
OUT
Output
+
+
IN+
REF
-
GND
Copyright © 2017, Texas Instruments Incorporated
Figure 32. Bidirectional Application Schematic
8.2.2.1 Design Requirements
The device is a bidirectional, current-sense amplifier capable of measuring currents through a resistive shunt in
two directions. This bidirectional monitoring is common in applications that include charging and discharging
operations where the current flow-through resistor can change directions.
8.2.2.2 Detailed Design Procedure
The ability to measure this current flowing in both directions is enabled by applying a voltage to the REF pin, as
shown in Figure 32. The voltage applied to REF (VREF) sets the output state that corresponds to the zero-input
level state. The output then responds by increasing above VREF for positive differential signals (relative to the IN–
pin) and responds by decreasing below VREF for negative differential signals. This reference voltage applied to
the REF pin can be set anywhere between 0 V to V+. For bidirectional applications, VREF is typically set at
midscale for equal signal range in both current directions. In some cases, however, VREF is set at a voltage other
than midscale when the bidirectional current and corresponding output signal do not need to be symmetrical.
8.2.2.3 Application Curve
An example output response of a bidirectional configuration is shown in Figure 33. With the REF pin connected
to a reference voltage ( 2.5 V in this case) the output voltage is biased upwards by this reference level. The
output rises above the reference voltage for positive differential input signals and falls below the reference
voltage for negative differential input signals.
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Output Voltage
(1 V/div)
Typical Applications (continued)
VOUT
VREF
0V
Time (500 µs/div)
C002
Figure 33. Bidirectional Application Output Response
9 Power Supply Recommendations
The input circuitry of the INA21x can accurately measure beyond the power-supply voltage, V+. For example, the
V+ power supply can be 5 V, whereas the load power-supply voltage can be as high as 26 V. However, the
output voltage range of the OUT pin is limited by the voltages on the power-supply pin. Note also that the INA21x
can withstand the full input signal range up to 26 V at the input pins, regardless of whether the device has power
applied or not.
10 Layout
10.1 Layout Guidelines
•
•
Connect the input pins to the sensing resistor using a Kelvin or 4-wire connection. This connection technique
ensures that only the current-sensing resistor impedance is detected between the input pins. Poor routing of
the current-sensing resistor commonly results in additional resistance present between the input pins. Given
the very low ohmic value of the current resistor, any additional high-current carrying impedance can cause
significant measurement errors.
Place the power-supply bypass capacitor as closely as possible to the supply and ground pins. The
recommended value of this bypass capacitor is 0.1 μF. Additional decoupling capacitance can be added to
compensate for noisy or high-impedance power supplies.
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10.2 Layout Example
Output Signal
Trace
IN+
VIA to Ground Plane
V+
INGND
REF
OUT
VIA to Power or
Ground Plane
Supply
Voltage
Supply Bypass
Capacitor
Copyright © 2017, Texas Instruments Incorporated
Figure 34. Recommended Layout
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation see the following:
• INA210-215EVM User's Guide
11.2 Related Links
Table 3 lists quick access links. Categories include technical documents, support and community resources,
tools and software, and quick access to sample or buy.
Table 3. Related Links
PARTS
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INA212
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INA213
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INA214
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INA215
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11.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.4 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.5 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
Copyright © 2008–2017, Texas Instruments Incorporated
Submit Documentation Feedback
Product Folder Links: INA210 INA211 INA212 INA213 INA214 INA215
27
INA210, INA211, INA212, INA213, INA214, INA215
SBOS437J – MAY 2008 – REVISED FEBRUARY 2017
www.ti.com
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
28
Submit Documentation Feedback
Copyright © 2008–2017, Texas Instruments Incorporated
Product Folder Links: INA210 INA211 INA212 INA213 INA214 INA215
PACKAGE OPTION ADDENDUM
www.ti.com
8-Dec-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
INA210AIDCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CET
INA210AIDCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CET
INA210AIRSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
Call TI | NIPDAU
Level-1-260C-UNLIM
-40 to 125
KNJ
INA210AIRSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
(KNJ, NSJ)
INA210BIDCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
SED
INA210BIDCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
SED
INA210BIRSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SHQ
INA210BIRSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SHQ
INA210CIDCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
16B
INA210CIDCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
16B
INA210CIRSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
16C
INA210CIRSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
16C
INA211AIDCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CEU
INA211AIDCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CEU
INA211BIDCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
SEE
INA211BIDCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
SEE
INA211BIRSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
13Q
INA211BIRSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
13Q
INA211CIDCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
16D
INA211CIDCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
16D
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
8-Dec-2021
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
INA211CIRSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
16U
INA211CIRSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
16U
INA212AIDCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CEV
INA212AIDCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CEV
INA212BIDCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
SEC
INA212BIDCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
SEC
INA212BIRSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
13U
INA212BIRSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
13U
INA212CIDCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
16E
INA212CIDCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
16E
INA212CIRSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
16V
INA212CIRSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
16V
INA213AIDCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CFT
INA213AIDCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CFT
INA213AIRSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
KPJ
INA213AIRSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
KPJ
INA213BIDCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
SEF
INA213BIDCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
SEF
INA213BIRSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SHT
INA213BIRSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SHT
INA213CIDCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
16F
Addendum-Page 2
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
8-Dec-2021
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
INA213CIDCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
16F
INA213CIRSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
16W
INA213CIRSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
16W
INA214AIDCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CFV
INA214AIDCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CFV
INA214AIRSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
Call TI | NIPDAU
Level-1-260C-UNLIM
-40 to 125
KRJ
INA214AIRSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
KRJ
INA214BIDCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
SEA
INA214BIDCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
SEA
INA214BIRSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SHU
INA214BIRSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SHU
INA214CIDCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
16G
INA214CIDCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
16G
INA214CIRSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
16X
INA214CIRSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
16X
INA215AIDCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
SME
INA215AIDCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
SME
INA215BIDCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
13S
INA215BIDCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
13S
INA215BIRSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
13R
INA215BIRSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
13R
Addendum-Page 3
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
8-Dec-2021
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
INA215CIDCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
17K
INA215CIDCKT
ACTIVE
SC70
DCK
6
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
17K
INA215CIRSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
16Z
INA215CIRSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
16Z
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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