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INA210-Q1, INA211-Q1, INA212-Q1, INA213-Q1, INA214-Q1, INA215-Q1
SBOS475J – MARCH 2009 – REVISED APRIL 2020
INA21x-Q1 Automotive-Grade, Voltage Output, Low-Side or High-Side Measurement,
Bidirectional, Zero-Drift Series, Current-Shunt Monitors
1 Features
3 Description
•
The INA21x-Q1 family of devices is a voltage-output,
current-shunt monitor (also called a current-sense
amplifier) that can sense drops across shunts at
common-mode voltages from –0.3 V to 26 V,
independent of the supply voltage. Five fixed gains
are available: 50 V/V, 75 V/V, 100 V/V, 200 V/V, 500
V/V, and 1000 V/V. This family of devices is
commonly used for overcurrent detection, voltage
feedback control loops, or as a power monitor. The
low offset of the zero-drift architecture enables
current sensing with maximum drops across the
shunt as low as 10-mV full-scale.
1
•
•
•
•
•
•
•
AEC-Q100 qualified for automotive applications:
– Temperature grade 1: –40°C to +125°C, TA
Functional Safety-Capable
– Documentation available to aid functional
safety system design
Wide common-mode range: –0.3 V to 26 V
Offset voltage: ±100 µV (maximum)
(enables shunt drops of 10-mV full-scale)
Accuracy:
– Gain error:
– ±1% (max over temperature, versions A, B)
– ±0.5% (version C)
– Offset drift: 0.5-µV/°C (maximum)
– Gain drift: 10-ppm/°C (maximum)
Choice of gain:
– INA210-Q1: 200 V/V
– INA211-Q1: 500 V/V
– INA212-Q1: 1000 V/V
– INA213-Q1: 50 V/V
– INA214-Q1: 100 V/V
– INA215-Q1: 75 V/V
Quiescent current: 100 µA (maximum)
Package: 6-pin SC70
The devices operate from a single 2.7-V to 26-V
power supply, drawing a maximum of 100 µA of
supply current. The devices are specified over the
operating temperature range of –40°C to +125°C and
are offered in a 6-pin SC70 package.
Device Information(1)
PART NUMBER
Body control module
Valve control
Motor control
Electronic stability control
Wireless charging transmitters
BODY SIZE (NOM)
SC70 (6)
2.00 mm × 1.25 mm
INA211-Q1
SC70 (6)
2.00 mm × 1.25 mm
INA212-Q1
SC70 (6)
2.00 mm × 1.25 mm
INA213-Q1
SC70 (6)
2.00 mm × 1.25 mm
INA214-Q1
SC70 (6)
2.00 mm × 1.25 mm
INA215-Q1
SC70 (6)
2.00 mm × 1.25 mm
(1) For all available packages, see the package option addendum
at the end of the data sheet.
2 Applications
•
•
•
•
•
PACKAGE
INA210-Q1
Simplified Schematic
REF
GND
2.7 V to 26 V
RSHUNT
Supply
Reference
Voltage
INA21x-Q1
R1
R3
IN-
IN+
SC70
Output
OUT
V+
R2
CBYPASS
0.01 mF
to
0.1 mF
Load
R4
PRODUCT
GAIN
R3 and R4
R1 and R2
INA210-Q1
INA211-Q1
INA212-Q1
INA213-Q1
INA214-Q1
INA215-Q1
200
500
1000
50
100
75
5 kW
2 kW
1 kW
20 kW
10 kW
13.3 kW
1 MW
1 MW
1 MW
1 MW
1 MW
1 MW
VOUT = (ILOAD ´ RSHUNT) Gain + VREF
Copyright © 2017, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
INA210-Q1, INA211-Q1, INA212-Q1, INA213-Q1, INA214-Q1, INA215-Q1
SBOS475J – MARCH 2009 – REVISED APRIL 2020
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
5
6
6.1
6.2
6.3
6.4
6.5
6.6
6
6
6
7
7
9
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description ............................................ 13
7.1
7.2
7.3
7.4
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
13
13
14
15
8
Application and Implementation ........................ 21
8.1 Application Information............................................ 21
8.2 Typical Applications ............................................... 21
9 Power Supply Recommendations...................... 24
10 Layout................................................................... 24
10.1 Layout Guidelines ................................................. 24
10.2 Layout Example .................................................... 24
11 Device and Documentation Support ................. 25
11.1
11.2
11.3
11.4
11.5
11.6
11.7
Documentation Support ........................................
Related Links ........................................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
25
25
25
25
25
25
25
12 Mechanical, Packaging, and Orderable
Information ........................................................... 25
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision I (August 2019) to Revision J
•
Page
Added Functional Safety-Capable information ....................................................................................................................... 1
Changes from Revision H (September 2017) to Revision I
Page
•
Changed VS and VIN maximum values from 26 V to 28 V in Absolute Maximum Ratings table............................................ 6
•
Changed differential VIN minimum value from –26 V to –28 V in Absolute Maximum Ratings table ..................................... 6
•
Added new Note 3 with caution regarding operation between 26 V and 28 V....................................................................... 6
Changes from Revision G (May 2016) to Revision H
Page
•
Deleted Device Options table ................................................................................................................................................ 5
•
Added VDIF to analog input parameter in Absolute Maximum Ratings table ......................................................................... 6
•
Added VS table note in Absolute Maximum Ratings table ..................................................................................................... 6
•
Changed formatting of Thermal Information table note ......................................................................................................... 7
•
Deleted first table note in Electrical Characteristics table ..................................................................................................... 7
•
Added version C to input test conditions in Electrical Characteristics table .......................................................................... 7
•
Added version C test conditions to gain error parameter in Electrical Characteristics table ................................................ 8
•
Changed Figure 7, Figure 10 , Figure 15, Figure 17, Figure 18, Figure 19, Figure 20 , Figure 21 and Figure 22 to
match commercial data sheet ................................................................................................................................................ 9
•
Added test conditions to Figure 8, Figure 9, Figure 10, and Figure 11 and Figure 12 from INA21x commercial data
sheet ...................................................................................................................................................................................... 9
•
Changed x-axis unit in Figure 17 from "ms" to "µs" ............................................................................................................. 10
2
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SBOS475J – MARCH 2009 – REVISED APRIL 2020
Changes from Revision F (April 2016) to Revision G
Page
•
Released INA210-Q1, INA211-Q1, and INA215-Q1 to production ........................................................................................ 1
•
Deleted second footnote from Device Information table ....................................................................................................... 1
Copyright © 2009–2020, Texas Instruments Incorporated
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INA210-Q1, INA211-Q1, INA212-Q1, INA213-Q1, INA214-Q1, INA215-Q1
SBOS475J – MARCH 2009 – REVISED APRIL 2020
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Changes from Revision E (December 2014) to Revision F
Page
•
Changed Choice of Gain Features bullet: added INA210-Q1, INA211-Q1, and INA215-Q1 sub-bullets, deleted A
from INA213-Q1...................................................................................................................................................................... 1
•
Changed Device Information table: added INA210-Q1, INA211-Q1, INA215-Q1 rows, deleted A from INA213A-Q1,
changed package term from SOT to SC70 ............................................................................................................................ 1
•
Changed first Features bullet ................................................................................................................................................. 1
•
Changed first paragraph of Description section .................................................................................................................... 1
•
Changed Simplified Schematic: changed figure table............................................................................................................ 1
•
Deleted footnote 1 from Pin Functions table ......................................................................................................................... 5
•
Changed Absolute Maximum Ratings operating temperature from –55°C to 150°C to –40°C to 125°C .............................. 6
•
Changed Changed ESD Ratings table: changed title, made CDM values all one row because corner pins and all
other pins tested the same, added separation of specs for versions A and B, and moved the storage temperature to
Absolute Maximum Ratings table; added version B devices ................................................................................................ 6
•
Changed Electrical Characteristics table: changed conditions and changed all INA213A-Q1 to INA213-Q1 ....................... 7
•
Changed Input, VCM parameter in Electrical Characteristics table ........................................................................................ 7
•
Changed Input, CMRR and VOS parameters in Electrical Characteristics table .................................................................... 7
•
Changed Output, Gain parameter in Electrical Characteristics table .................................................................................... 8
•
Deleted test conditions from Output, Nonlinearity error parameter in Electrical Characteristics table .................................. 8
•
Changed Frequency Response, BW parameter in Electrical Characteristics table ............................................................... 8
•
Changed conditions of Typical Characteristics section ......................................................................................................... 9
•
Changed Figure 7................................................................................................................................................................... 9
•
Changed Figure 15 .............................................................................................................................................................. 10
•
Changed first sentence of Overview section ....................................................................................................................... 13
•
Changed first sentence of Basic Connections section ........................................................................................................ 14
•
Changed last paragraph of Selecting RS section ................................................................................................................ 14
•
Changed Table 1 and Table 2 ............................................................................................................................................. 16
•
Changed Figure 25 .............................................................................................................................................................. 17
•
Changed Improving Transient Robustness section: changed first paragraph, added caution and last paragraph.............. 20
Changes from Revision D (October 2013) to Revision E
Page
•
Added Handling Rating table, Feature Description section, Device Functional Modes, Application and
Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation
Support section, and Mechanical, Packaging, and Orderable Information section ............................................................... 6
•
Deleted θJA thermal resistance parameter from Electrical Characteristics ............................................................................. 8
Changes from Revision C (August 2013) to Revision D
Page
•
Changed INA213-Q1 device to INA213A-Q1 device throughout document........................................................................... 1
•
Deleted TA, Operating Temperature from ABSOLUTE MAXIMUM RATINGS table .............................................................. 6
4
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SBOS475J – MARCH 2009 – REVISED APRIL 2020
Changes from Revision B (June 2010) to Revision C
Page
•
Changed device names to -Q1 throughout ............................................................................................................................ 1
•
Added INA212-Q1: 1000 V/V to Features. ............................................................................................................................. 1
•
Changed Applications bullets to be all automotive specific.................................................................................................... 1
•
Added INA212-Q1 offers a fixed gain of 1000 V/V to Description. ........................................................................................ 1
•
Added INA212-Q1 to image. .................................................................................................................................................. 1
•
Deleted Ordering Information table ........................................................................................................................................ 6
•
Changed HBM to 2000 V, removed MM. ............................................................................................................................... 6
•
Changed TA to -40 to 125°C................................................................................................................................................... 6
•
Added INA212-Q1 values to CMRR VOS and Gain in Electrical Characteristics table. .......................................................... 7
•
Changed Bandwidth parameter in the ELECTRICAL CHARACTERISTICS to differentiate between devices...................... 8
•
Changed GAIN vs FREQUENCY graph to show difference between devices ...................................................................... 9
•
Added INA212-Q1 device name in App Information. ........................................................................................................... 14
•
Added INA212-Q1 to image. ................................................................................................................................................ 17
Copyright © 2009–2020, Texas Instruments Incorporated
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SBOS475J – MARCH 2009 – REVISED APRIL 2020
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5 Pin Configuration and Functions
DCK Package
6-Pin SC70
Top View
REF
1
6
OUT
GND
2
5
IN-
V+
3
4
IN+
Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
GND
2
—
IN–
5
I
Connect to load side of shunt resistor.
IN+
4
I
Connect to supply side of shunt resistor
OUT
6
O
Output voltage
REF
1
I
Reference voltage, 0 V to V+
V+
3
—
Power supply, 2.7 V to 26 V
6
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Ground
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SBOS475J – MARCH 2009 – REVISED APRIL 2020
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
Supply voltage, VS (2) (3)
UNIT
28
Differential: VDIF = (VIN+) – (VIN–)
V
–28
28
Common-mode (Version A)
GND – 0.3
28
Common-mode (Versions B and C)
GND – 0.1
28
V
REF input
GND – 0.3
(VS) + 0.3
V
Output (5)
GND – 0.3
(VS) + 0.3
Analog inputs, VIN+ , VIN– (3) (4)
Input current into any pin (5)
Operating temperature
–40
Junction temperature
Storage temperature, Tstg
(1)
(2)
(3)
(4)
(5)
–65
V
V
5
mA
125
°C
150
°C
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
VS refers to the voltage at the V+ pin.
Sustained operation between 26 V and 28 V for more than a few minutes may cause permanent damage to the device.
VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively.
Input voltage at any pin can exceed the voltage shown if the current at that pin is limited to 5 mA.
6.2 ESD Ratings
VALUE
UNIT
INA21x-Q1 (VERSION A)
V(ESD)
Electrostatic discharge
Human body model (HBM), per AEC Q100-002 (1)
HBM ESD classification level 2
±2000
Charged device model (CDM), per AEC Q100-011
CDM ESD classification level C6
±1000
Human body model (HBM), per AEC Q100-002 (1)
HBM ESD classification level 2
±3500
Charged device model (CDM), per AEC Q100-011
CDM ESD classification level C6
±1000
V
INA21x-Q1 (VERSIONS B AND C)
V(ESD)
(1)
Electrostatic discharge
V
AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
VCM
Common-mode input voltage
VS
Supply voltage
2.7
26
V
TJ
Junction temperature
–40
125
°C
Copyright © 2009–2020, Texas Instruments Incorporated
12
UNIT
V
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SBOS475J – MARCH 2009 – REVISED APRIL 2020
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6.4 Thermal Information
INA21x-Q1
THERMAL METRIC (1)
DCK (SC70)
UNIT
6 PINS
RθJA
Junction-to-ambient thermal resistance
227.3
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
79.5
°C/W
RθJB
Junction-to-board thermal resistance
72.1
°C/W
ψJT
Junction-to-top characterization parameter
3.6
°C/W
ψJB
Junction-to-board characterization parameter
70.4
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics
at TA = 25°C and VSENSE = VIN+ – VIN–.
INA210-Q1, INA213-Q1, INA214-Q1, and INA215-Q1: VS = 5 V, VIN+ = 12 V, and VREF = VS / 2, (unless otherwise noted)
INA211-Q1 and INA212-Q1: VS = 12 V, VIN+ = 12 V, and VREF = VS / 2, (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT
Common-mode
input
VCM
Common-mode
rejection ratio
CMRR
Offset voltage,
RTI (1)
VOS
Version A
TA = –40°C to 125°C
–0.3
26
Versions B and C
TA = –40°C to 125°C
–0.1
26
VIN+ = 0 V to 26 V
VSENSE = 0 mV
TA = –40°C to 125°C
VSENSE = 0 mV
TA = 25°C
dVOS/dT
Offset voltage vs
temperature (2)
TA = –40°C to 125°C
PSR
Offset voltage vs
power supply
VS = 2.7 V to 18 V
VIN+ = 18 V
VSENSE = 0 mV
TA = 25°C
IB
Input bias current
VSENSE = 0 mV
TA = 25°C
IOS
Input offset current
VSENSE = 0 mV
TA = 25°C
(1)
(2)
8
V
INA210-Q1
INA211-Q1
INA212-Q1
INA214-Q1
INA215-Q1
105
140
INA213-Q1
100
120
dB
INA210-Q1
INA211-Q1
INA212-Q1
±0.55
±35
INA213-Q1
±5
±100
INA214-Q1
INA215-Q1
±1
±60
0.1
0.5
µV/°C
±0.1
±10
µV/V
28
35
µA
15
±0.02
µV
µA
RTI = referred to input.
Not production tested.
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SBOS475J – MARCH 2009 – REVISED APRIL 2020
Electrical Characteristics (continued)
at TA = 25°C and VSENSE = VIN+ – VIN–.
INA210-Q1, INA213-Q1, INA214-Q1, and INA215-Q1: VS = 5 V, VIN+ = 12 V, and VREF = VS / 2, (unless otherwise noted)
INA211-Q1 and INA212-Q1: VS = 12 V, VIN+ = 12 V, and VREF = VS / 2, (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OUTPUT
INA210-Q1
Gain
Gain error
Gain error vs
temperature (2)
Nonlinearity error
200
INA211-Q1
500
INA212-Q1
1000
INA213-Q1
50
INA214-Q1
100
INA215-Q1
75
V/V
VSENSE = –5 mV to 5 mV (Versions A and B)
TA = –40°C to 125°C
±0.02%
±1%
VSENSE = –5 mV to 5 mV (Version C)
TA = –40°C to 125°C
±0.02%
±0.5%
3
10
TA = –40°C to 125°C
ppm/°C
±0.01%
TA = 25°C
Maximum capacitive No sustained oscillation
load
TA = 25°C
1
nF
VOLTAGE OUTPUT
Output voltage
swing to V+ powersupply rail (3)
RL = 10 kΩ to GND
TA = –40°C to 125°C
(V+) – 0.05
(V+) – 0.2
V
Output voltage
swing to GND
TA = –40°C to 125°C
(VGND) + 0.005
(VGND) + 0.05
V
FREQUENCY RESPONSE
BW
SR
CLOAD = 10 pF
INA210-Q1
14
CLOAD = 10 pF
INA211-Q1
7
CLOAD = 10 pF
INA212-Q1
Bandwidth
CLOAD = 10 pF
INA213-Q1
Slew rate
4
TA = 25°C
kHz
80
CLOAD = 10 pF
INA214-Q1
30
CLOAD = 10 pF
INA215-Q1
40
TA = 25°C
0.4
V/µs
RTI (1)
TA = 25°C
25
nV/√Hz
NOISE, RTI
Voltage noise
density
POWER SUPPLY
TA = 25°C
IQ
(3)
Quiescent current
VSENSE = 0 mV
65
TA = –40°C to
125°C
100
115
µA
See Figure 10 in the Typical Characteristics section.
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6.6 Typical Characteristics
at TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS / 2, (unless otherwise noted)
100
80
Population
Offset Voltage (mV)
60
40
20
0
-20
-40
-60
35
25
30
15
20
5
10
0
-5
-10
-15
-20
-25
-30
-35
-80
-100
-50
-25
0
Offset Voltage (mV)
25
50
75
100
125
150
Temperature (°C)
Figure 1. Input Offset Voltage Production Distribution
Figure 2. Offset Voltage vs Temperature
5
4
Population
CMRR (mV/V)
3
2
1
0
-1
-2
-3
-4
-5.0
-4.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-5
-50
-25
0
Common-Mode Rejection Ratio (mV/V)
25
50
75
100
125
150
Temperature (°C)
Figure 3. Common-Mode Rejection Production Distribution
Figure 4. Common-Mode Rejection Ratio vs Temperature
1.0
0.8
Population
Gain Error (%)
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-0.8
Gain Error (%)
Figure 5. Gain Error Production Distribution
10
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-1.0
-50
-25
0
25
50
75
100
125
150
Temperature (°C)
20 typical units shown
Figure 6. Gain Error vs Temperature
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Typical Characteristics (continued)
at TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS / 2, (unless otherwise noted)
70
160
INA210-Q1
60
INA212-Q1
INA213-Q1
INA214-Q1
INA215-Q1
140
120
|PSRR| (dB)
Gain (dB)
50
INA211-Q1
40
30
20
100
80
60
10
40
0
20
-10
0
10
100
1k
10k
100k
1M
10M
1
10
100
Frequency (Hz)
VCM = 0 V
VDIF = 15-mVPP sine
VCM = 0 V
Figure 7. Gain vs Frequency
Output Voltage Swing (V)
140
|CMRR| (dB)
120
100
80
60
40
20
0
10
100
1k
10k
VS = 5 V + 250-mV sine disturbance
VREF = 2.5 V
VDIF = shorted
100k
V+
(V+) - 0.5
(V+) - 1
(V+) - 1.5
(V+) - 2
(V+) - 2.5
(V+) - 3
VS = 5 V to 26 V
VS = 2.7 V
to 26 V
VS = 2.7 V
GND + 3
GND + 2.5
GND + 2
GND + 1.5
GND + 1
GND + 0.5
GND
0
1M
5
10
15
20
25
30
35
40
Output Current (mA)
VCM = 1 V sine
VREF = 2.5 V
VDIF = shorted
Figure 9. Common-Mode Rejection Ratio vs Frequency
Figure 10. Output Voltage Swing vs Output Current
50
30
25
40
IB+7 IB-7 VREF = 0 V
Input Bias Current (PA)
Input Bias Current (µA)
TA = –40°C
TA = +25°C
TA = +125°C
VS = 2.7 V to 26 V
Frequency (Hz)
VS = 5 V
100k
10k
Figure 8. Power-Supply Rejection Ratio vs Frequency
160
1
1k
Frequency (Hz)
30
20
IB+7 IB-7 VREF = 2.5 V
10
0
0V
2.5V
20
IB+7 VREF = 2.5 V
15
10
5
IB+7 IB-7 VREF = 0 V and
IB-7 VREF = 25 V
0
0V
2.5V
5
±
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Common-Mode Voltage (V)
Common-Mode Voltage (V)
Figure 11. Input Bias Current vs Common-Mode Voltage
With Supply Voltage = 5 V
Figure 12. Input Bias Current vs Common-Mode Voltage
With Supply Voltage = 0 V (Shutdown)
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Typical Characteristics (continued)
at TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS / 2, (unless otherwise noted)
35
100
90
Quiescent Current (mA)
Input Bias Current (mA)
30
25
20
15
10
5
80
70
60
50
40
30
20
10
0
-50
0
-25
25
50
75
100
125
0
-50
150
-25
0
25
50
75
100
125
150
Temperature (°C)
Temperature (°C)
Figure 13. Input Bias Current vs Temperature
Figure 14. Quiescent Current vs Temperature
Referred-to-Input
Voltage Noise (200 nV/div)
10
1
INA210-Q1
INA211-Q1
INA212-Q1
INA213-Q1
INA214-Q1
INA215-Q1
10
100
1k
10k
VS = ±2.5 V
VREF = 0 V
VS = ±2.5 V
VIN–, VIN+ = 0 V
Figure 15. Input-Referred Voltage Noise vs Frequency
Input Voltage
(5mV/diV)
Figure 17. Step Response (10-mVPP Input Step)
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VREF = 0 V
VDIF = 0 V
VCM = 0 V
Figure 16. 0.1-Hz To 10-Hz Voltage Noise (Referred-To-Input)
Output Voltage
Common Voltage
Output Voltage (40mV/div)
Output Voltage
(0.5V/diV)
2VPP Output
10mVPP Input
Time (100µs/div)
12
Time (1 s/div)
100k
Frequency (Hz)
Common-Mode Voltage (1V/div)
Input-Reffered Voltage Noise (nV/Öz)
100
0V
0V
Time (50μs/div)
Figure 18. Common-Mode Voltage Transient Response
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Typical Characteristics (continued)
at TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS / 2, (unless otherwise noted)
Noninverting Input
Output
2V/div
2V/div
Inverting Input
Output
0V
0V
Time (250μs/div)
VS = 5 V
Time (250μs/div)
VREF = 2.5 V
VCM = 12 V
VS = 5 V
Figure 19. Inverting Differential Input Overload
VREF = 2.5 V
Figure 20. Noninverting Differential Input Overload
Supply Voltage
Output Voltage
Supply Voltage
Output Voltage
1V/div
1V/div
VCM = 12 V
0V
0V
Time (100μs/div)
Time (100μs/div)
VS = 5 V
VREF = 2.5 V
1-kHz step with VDIF
=0V
Figure 21. Start-Up Response
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VS = 5 V
VREF = 2.5 V
1-kHz step with VDIF
=0V
Figure 22. Brownout Recovery
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7 Detailed Description
7.1 Overview
The INA210-Q1 to INA215-Q1 are 26-V, common-mode, zero-drift topology, current-sensing amplifiers that can
be used in both low-side and high-side configurations. These specially-designed, current-sensing amplifiers are
able to accurately measure voltages developed across current-sensing resistors on common-mode voltages that
far exceed the supply voltage powering the device. Current can be measured on input voltage rails as high as
26 V and the device can be powered from supply voltages as low as 2.7 V.
The zero-drift topology enables high-precision measurements with maximum input offset voltages as low as
35 µV with a maximum temperature contribution of 0.5 µV/°C over the full temperature range of –40°C to 125°C.
7.2 Functional Block Diagram
V+
IN-
±
IN+
+
OUT
REF
GND
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7.3 Feature Description
7.3.1 Basic Connections
Figure 23 shows the basic connections of the INA210-Q1 to INA215-Q1. Connect the input pins (IN+ and IN–) as
closely as possible to the shunt resistor to minimize any resistance in series with the shunt resistor.
RSHUNT
Load
Power Supply
5-V Supply
CBYPASS
0.1 µF
V+
IN-
OUT
ADC
Microcontroller
+
IN+
REF
GND
Copyright © 2017, Texas Instruments Incorporated
Figure 23. Typical Application
Power-supply bypass capacitors are required for stability. Applications with noisy or high-impedance power
supplies can require additional decoupling capacitors to reject power-supply noise. Connect bypass capacitors
close to the device pins.
7.3.2 Selecting RS
The zero-drift offset performance of the INA21x-Q1 family of devices offers several benefits. In general, the
primary advantage of the low offset characteristic enables lower full-scale drops across the shunt. For example,
non-zero-drift current-shunt monitors typically require a full-scale range of 100 mV.
The INA21x-Q1 family of devices provides equivalent accuracy at a full-scale range on the order of 10 mV. This
accuracy reduces shunt dissipation by an order of magnitude with many additional benefits.
Alternatively, some applications must measure current over a wide dynamic range and can take advantage of the
low offset on the low end of the measurement. Most often, these applications can use the lower-gain INA213-Q1,
INA214-Q1, or INA215-Q1 to accommodate larger shunt drops on the upper end of the scale. For instance, an
INA213-Q1 device operating on a 3.3-V supply can easily support a full-scale shunt drop of 60 mV, with only
100 µV of offset.
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7.4 Device Functional Modes
7.4.1 Input Filtering
An obvious and straightforward location for filtering is at the output of the INA21x-Q1 family of devices. However,
this location negates the advantage of the low output impedance of the internal buffer. The only other filtering
option is at the input pins of the INA21x-Q1 family of devices. This location, however, requires consideration of
the ±30% tolerance of the internal resistances. Figure 24 shows a filter placed at the input pins.
V+
VCM
RS < 10 W
RINT
VOUT
RSHUNT
CF
Bias
RS < 10 W
VREF
RINT
Load
Figure 24. Filter at Input Pins
The addition of external series resistance, however, creates an additional error in the measurement so the value
of these series resistors must be kept to 10 Ω (or less, if possible) to reduce impact to accuracy. The internal
bias network shown in Figure 24 that is present at the input pins creates a mismatch in input bias currents when
a differential voltage is applied between the input pins. If additional external series filter resistors are added to the
circuit, the mismatch in bias currents results in a mismatch of voltage drops across the filter resistors. This
mismatch creates a differential error voltage that subtracts from the voltage developed at the shunt resistor. This
error results in a voltage at the device input pins that is different than the voltage developed across the shunt
resistor. Without the additional series resistance, the mismatch in input bias currents has little effect on device
operation. The amount of error these external filter resistors add to the measurement can be calculated using
Equation 2 where the gain error factor is calculated using Equation 1.
The amount of variance in the differential voltage present at the device input relative to the voltage developed at
the shunt resistor is based both on the external series resistance value as well as the internal input resistors, R3
and R4 (or RINT as shown in Figure 24). The reduction of the shunt voltage reaching the device input pins
appears as a gain error when comparing the output voltage relative to the voltage across the shunt resistor. A
factor can be calculated to determine the amount of gain error that is introduced by the addition of external series
resistance. Use Equation 1 to calculate the expected deviation from the shunt voltage to what is measured at the
device input pins.
(1250 ´ RINT)
Gain Error Factor =
(1250 ´ RS) + (1250 ´ RINT) + (RS ´ RINT)
where:
•
•
16
RINT is the internal input resistor (R3 and R4), and
RS is the external series resistance.
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(1)
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Device Functional Modes (continued)
With the adjustment factor from Equation 1 including the device internal input resistance, this factor varies with
each gain version, as shown in Table 1. Table 2 lists each individual device gain-error factor.
Table 1. Input Resistance
PRODUCT
GAIN
RINT (kΩ)
INA210-Q1
200
5
INA211-Q1
500
2
INA212-Q1
1000
1
INA213-Q1
50
20
INA214-Q1
100
10
INA215-Q1
75
13.3
Table 2. Device Gain Error Factor
PRODUCT
SIMPLIFIED GAIN ERROR FACTOR
INA210-Q1
1000
RS + 1000
10,000
INA211-Q1
INA212-Q1
(13 ´ RS) + 10,000
5000
(9 ´ RS) + 5000
20,000
INA213-Q1
(17 ´ RS) + 20,000
10,000
INA214-Q1
INA215-Q1
(9 ´ RS) + 10,000
8,000
(7 x RS) + 8,000
Use Equation 2 to calculate the gain error that can be expected from the addition of the external series resistors.
Gain Error (%) = 100 - (100 ´ Gain Error Factor)
(2)
For example, using an INA212-Q1 device and the corresponding gain error equation from Table 2, a series
resistance of 10 Ω results in a gain error factor of 0.982. The corresponding gain error is then calculated using
Equation 2, resulting in a gain error of approximately 1.77% solely because of the external 10-Ω series resistors.
Using an INA213-Q1 with the same 10-Ω series resistor results in a gain error factor of 0.991 and a gain error of
0.84% again solely because of these external resistors.
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7.4.2 Shutting Down the INA21x-Q1 Series
While the INA21x-Q1 family of devices does not have a shutdown pin, the low-power consumption of the device
allows the output of a logic gate or transistor switch to power the device. This gate or switch turns on and turns
off the INA21x-Q1 power-supply quiescent current.
However, in current-shunt monitoring applications, the amount of current drained from the shunt circuit in
shutdown conditions must be considered. Evaluating this current drain involves considering the simplified
schematic of the INA21x-Q1 family of devices in shutdown mode shown in Figure 25.
REF
GND
Shutdown
Control
RSHUNT
Supply
Reference
Voltage
INA21x-Q1
OUT
1 MW
R3
1 MW
R4
Load
Output
IN-
IN+
V+
CBYPASS
PRODUCT
R3 and R4
INA210-Q1
INA211-Q1
INA212-Q1
INA213-Q1
INA214-Q1
INA215-Q1
5 kW
2 kW
1 kW
20 kW
10 kW
13.3 kW
Copyright © 2017, Texas Instruments Incorporated
NOTE: 1-MΩ paths from shunt inputs to reference and INA21x-Q1 outputs.
Figure 25. Basic Circuit for Shutting Down INA21x-Q1 With a Grounded Reference
Slightly more than a 1-MΩ impedance (from the combination of 1-MΩ feedback and 5-kΩ input resistors) exists
from each input of the INA21x-Q1 family of devices to the OUT pin and to the REF pin. The amount of current
flowing through these pins depends on the respective ultimate connection. For example, if the REF pin is
grounded, the calculation of the effect of the 1-MΩ impedance from the shunt to ground is straightforward.
However, if the reference or operational amplifier (op amp) is powered when the INA21x-Q1 family of devices is
shut down, the calculation is direct. Instead of assuming 1 MΩ to ground, however, assume 1 MΩ to the
reference voltage. If the reference or op amp is also shut down, some knowledge of the reference or op amp
output impedance under shutdown conditions is required. For instance, if the reference source behaves as an
open circuit when not powered, little or no current flows through the 1-MΩ path.
Regarding the 1-MΩ path to the output pin, the output stage of a disabled INA21x-Q1 device does constitute a
good path to ground; consequently, this current is directly proportional to a shunt common-mode voltage present
across a 1-MΩ resistor.
NOTE
When the device is powered up, an additional, nearly constant and well-matched 25-µA
current flows in each of the inputs as long as the shunt common-mode voltage is 3 V or
higher. Below 2-V common-mode, the only current effects are the result of the 1-MΩ
resistors.
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7.4.3 REF Input Impedance Effects
As with any difference amplifier, the INA21x-Q1 common-mode rejection ratio is affected by any impedance
present at the REF input. This concern is not a problem when the REF pin is connected directly to most
references or power supplies. When using resistive dividers from the power supply or a reference voltage, buffer
the REF pin by an op amp.
In systems where the INA21x-Q1 output can be sensed differentially, such as by a differential input analog-todigital converter (ADC) or by using two separate ADC inputs, the effects of external impedance on the REF input
can be cancelled. Figure 26 shows a method of taking the output from the INA21x-Q1 family of devices by using
the REF pin as a reference.
RSHUNT
Supply
Load
ADC
REF
GND
2.7 V to 26 V
INA21x-Q1
OUT
R1
R3
R2
R4
Output
IN-
IN+
V+
CBYPASS
0.01 µF
to
0.1 µF
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Figure 26. Sensing INA21x-Q1 to Cancel Effects of Impedance on the REF Input
7.4.4 Using the INA21x-Q1 with Common-Mode Transients Above 26 V
With a small amount of additional circuitry, the INA21x-Q1 family of devices can be used in circuits subject to
transients higher than 26 V, such as automotive applications. Use only Zener diode or Zener-type transient
absorbers (sometimes referred to as transzorbs)—any other type of transient absorber has an unacceptable time
delay. Begin by adding a pair of resistors as a working impedance for the Zener diode, as shown in Figure 27.
Keeping these resistors as small as possible is preferable, typically around 10 Ω. Larger values can be used with
an effect on gain that is discussed in the Input Filtering section. Because this circuit limits only short-term
transients, many applications are satisfied with a 10-Ω resistor along with conventional Zener diodes of the
lowest power rating that can be found. This combination uses the least amount of board space. These diodes
can be found in packages as small as SOT-523 or SOD-523.
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RSHUNT
Supply
RPROTECT
10 Ω
Load
RPROTECT
10 Ω
Reference
Voltage
REF
INA21x-Q1
GND
1 MΩ
R3
1 MΩ
R4
V+
Shutdown
Control
Output
OUT
IN-
IN+
CBYPASS
Copyright © 2017, Texas Instruments Incorporated
Figure 27. INA21x-Q1 Transient Protection Using Dual Zener Diodes
In the event that low-power Zener diodes do not have sufficient transient absorption capability and a higher
power transzorb must be used, the most package-efficient solution then involves using a single transzorb and
back-to-back diodes between the device inputs. The most space-efficient solutions are dual series-connected
diodes in a single SOT-523 or SOD-523 package. Figure 28 shows this method. In either of these examples, the
total board area required by the INA21x-Q1 family of devices with all protective components is less than that of
an SO-8 package, and only slightly greater than that of an MSOP-8 package.
RSHUNT
Supply
RPROTECT
10 Ω
Load
RPROTECT
10 Ω
Reference
Voltage
REF
GND
INA21x-Q1
1MΩ
R3
1 MΩ
R4
V+
Shutdown
Control
OUT
Output
IN-
IN+
CBYPASS
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Figure 28. INA21x-Q1 Transient Protection Using a Single Transzorb and Input Clamps
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7.4.5 Improving Transient Robustness
CAUTION
Applications involving large input transients with excessive dV/dt above 2 kV per
microsecond present at the device input pins can cause damage to the internal ESD
structures on version A devices.
The potential damage from large input transients is a result of the internal latching of the ESD structure to ground
when this transient occurs at the input. With significant current available in most current-sensing applications, the
large current flowing through the input transient-triggered, ground-shorted ESD structure quickly results in
damage to the silicon. External filtering can be used to attenuate the transient signal prior to reaching the inputs
to avoid the latching condition. Care must be taken to ensure that external series input resistance does not
significantly impact gain error accuracy. For accuracy purposes, keep these resistances under 10 Ω if possible.
Ferrite beads are recommended for this filter because of the inherently low-dc ohmic value. Ferrite beads with
less than 10 Ω of resistance at dc and over 600 Ω of resistance at 100 MHz to 200 MHz are recommended. The
recommended capacitor values for this filter are between 0.01 µF and 0.1 µF to ensure adequate attenuation in
the high-frequency region. Figure 29 illustrates this protection scheme.
Shunt
Reference
Voltage
Load
Supply
Device
OUT
REF
1 MW
R3
GND
IN-
-
+
MMZ1608B601C
IN+
V+
2.7 V to 26 V
1 MW
0.01mF
to 0.1mF
Output
R4
0.01mF
to 0.1mF
Copyright © 2017, Texas Instruments Incorporated
Figure 29. Transient Protection
To minimize the cost of adding these external components to protect the device in applications where large
transient signals may be present, version B and C devices are now available with new ESD structures that are
not susceptible to this latching condition. Version B and C devices are incapable of sustaining these damagecausing latched conditions so they do not have the same sensitivity to the transients that the version A devices
have, thus making the version B and C devices a better fit for these applications.
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The INA21x-Q1 family of devices measure the voltage developed across a current-sensing resistor when current
passes through the resistor. The ability to drive the reference pin to adjust the functionality of the output signal
offers multiple configurations, as discussed throughout the Typical Applications section.
8.2 Typical Applications
8.2.1 Unidirectional Operation
Unidirectional operation allows the INA21x-Q1 family of devices to measure currents through a resistive shunt in
one direction. The most frequent case of unidirectional operation sets the output at ground by connecting the
REF pin to ground. In unidirectional applications where the highest possible accuracy is desirable at very low
inputs, bias the REF pin to a convenient value above 50 mV to get the device output swing into the linear range
for zero inputs.
A less frequent case of unipolar output biasing is to bias the output by connecting the REF pin to the supply. In
this case, the quiescent output for zero input is at quiescent supply. This configuration only responds to negative
currents (inverted voltage polarity at the device input).
Bus Supply
Power Supply
Load
CBYPASS
0.1 µF
V+
IN-
OUT
Output
+
IN+
REF
GND
Copyright © 2017, Texas Instruments Incorporated
Figure 30. Unidirectional Application Schematic
8.2.1.1 Design Requirements
The device can be configured to monitor current flowing in one direction (unidirectional) or in both directions
(bidirectional) depending on how the REF pin is configured. The most common case is unidirectional where the
output is set to ground when no current is flowing by connecting the REF pin to ground, as shown in Figure 30.
When the input signal increases, the output voltage at the OUT pin increases.
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Typical Applications (continued)
8.2.1.2 Detailed Design Procedure
The linear range of the output stage is limited in how close the output voltage can approach ground under zero
input conditions. In unidirectional applications where measuring very-low input currents is desirable, bias the REF
pin to a convenient value above 50 mV to get the output into the linear range of the device. To limit commonmode rejection errors, TI recommends buffering the reference voltage connected to the REF pin.
A less frequently-used output biasing method is to connect the REF pin to the supply voltage, V+. This method
results in the output voltage saturating at 200 mV below the supply voltage when no differential input signal is
present. This method is similar to the output-saturated low condition with no input signal when the REF pin is
connected to ground. The output voltage in this configuration only responds to negative currents that develop
negative differential input voltage relative to the device IN– pin. Under these conditions, when the differential
input signal increases negatively, the output voltage moves downward from the saturated supply voltage. The
voltage applied to the REF pin must not exceed the device supply voltage.
8.2.1.3 Application Curve
Output Voltage
(1 V/div)
Figure 31 shows an example output response of a unidirectional configuration. With the REF pin connected
directly to ground, the output voltage is biased to this zero output level. The output rises above the reference
voltage for positive differential input signals but cannot fall below the reference voltage for negative differential
input signals because of the grounded reference voltage.
0V
VOUT
VREF
Time (500 µs /div)
Figure 31. Unidirectional Application Output Response
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Typical Applications (continued)
8.2.2 Bidirectional Operation
Load
Bus Supply
Power Supply
CBYPASS
0.1 µF
V+
IN-
Reference
Voltage
OUT
Output
+
IN+
REF
+
-
-
GND
Copyright © 2017, Texas Instruments Incorporated
Figure 32. Bidirectional Application Schematic
8.2.2.1 Design Requirements
The device is a bidirectional, current-sense amplifier capable of measuring currents through a resistive shunt in
two directions. This bidirectional monitoring is common in applications that include charging and discharging
operations where the current flow-through resistor can change directions.
8.2.2.2 Detailed Design Procedure
The ability to measure this current flowing in both directions is enabled by applying a voltage to the REF pin, as
shown in Figure 32. The voltage applied to REF (VREF) sets the output state that corresponds to the zero-input
level state. The output then responds by increasing above the VREF value for positive differential signals (relative
to the IN– pin) and responds by decreasing below the VREF value for negative differential signals. This reference
voltage applied to the REF pin can be set anywhere between 0 V to V+. For bidirectional applications, the VREF
value is typically set at mid-scale for equal signal range in both current directions. In some cases, however, the
VREF value is set at a voltage other than mid-scale when the bidirectional current and corresponding output signal
are note required to be symmetrical.
8.2.2.3 Application Curve
Output Voltage
(1 V/div)
Figure 33 shows an example output response of a bidirectional configuration. With the REF pin connected to a
reference voltage, 2.5 V in this case, the output voltage is biased upwards by this reference level. The output
rises above the reference voltage for positive differential input signals and falls below the reference voltage for
negative differential input signals.
VOUT
VREF
0V
Time (500 µs/div)
Figure 33. Bidirectional Application Output Response
24
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INA210-Q1, INA211-Q1, INA212-Q1, INA213-Q1, INA214-Q1, INA215-Q1
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SBOS475J – MARCH 2009 – REVISED APRIL 2020
9 Power Supply Recommendations
The input circuitry of the INA21x-Q1 family of devices can accurately measure beyond the power-supply voltage,
V+. For example, the V+ power supply can be 5 V, whereas the load power-supply voltage can be as high as 26
V. However, the output voltage range of the OUT pin is limited by the voltages on the power-supply pin. The
INA21x-Q1 family of devices can withstand the full input-signal range up to 26 V at the input pins, regardless of
whether the device has power applied or not.
10 Layout
10.1 Layout Guidelines
•
•
Connect the input pins to the sensing resistor using a Kelvin or 4-wire connection. This connection technique
ensures that only the current-sensing resistor impedance is detected between the input pins. Poor routing of
the current-sensing resistor commonly results in additional resistance present between the input pins. Given
the very-low ohmic value of the current resistor, any additional high-current carrying impedance can cause
significant measurement errors.
Place the power-supply bypass capacitor as closely as possible to the supply and ground pins. The
recommended value of this bypass capacitor is 0.1 μF. Additional decoupling capacitance can be added to
compensate for noisy or high-impedance power supplies.
10.2 Layout Example
Output Signal
Trace
IN+
VIA to Ground Plane
V+
INGND
REF
OUT
VIA to Power or
Ground Plane
Supply
Voltage
Supply Bypass
Capacitor
Copyright © 2017, Texas Instruments Incorporated
Figure 34. Recommended Layout
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation see the following:
INA210-215EVM user's guide
11.2 Related Links
Table 3 lists quick access links. Categories include technical documents, support and community resources,
tools and software, and quick access to sample or buy.
Table 3. Related Links
PARTS
PRODUCT FOLDER
ORDER NOW
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
INA210-Q1
Click here
Click here
Click here
Click here
Click here
INA211-Q1
Click here
Click here
Click here
Click here
Click here
INA212-Q1
Click here
Click here
Click here
Click here
Click here
INA213-Q1
Click here
Click here
Click here
Click here
Click here
INA214-Q1
Click here
Click here
Click here
Click here
Click here
INA215-Q1
Click here
Click here
Click here
Click here
Click here
11.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.4 Community Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
11.5 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
26
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
INA210BQDCKRQ1
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
13F
INA210CQDCKRQ1
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
17D
INA211BQDCKRQ1
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
13G
INA211CQDCKRQ1
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
17E
INA212AQDCKRQ1
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
SJW
INA212BQDCKRQ1
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
13H
INA212CQDCKRQ1
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
17F
INA213AQDCKRQ1
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
OBX
INA213BQDCKRQ1
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
13I
INA213CQDCKRQ1
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
17G
INA214AQDCKRQ1
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
OFT
INA214BQDCKRQ1
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
13J
INA214CQDCKRQ1
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
17H
INA215BQDCKRQ1
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-55 to 125
13K
INA215CQDCKRQ1
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
17I
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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