INA216
SBOS503C – JUNE 2010 – REVISED NOVEMBER 2011
www.ti.com
Small Size, Low-Power, Unidirectional,
CURRENT SHUNT MONITOR
Zerø-Drift Series
Check for Samples: INA216
FEATURES
DESCRIPTION
•
•
•
•
•
The INA216 is a high-side voltage output current
shunt monitor that can sense drops across shunts at
common-mode voltages from +1.8V to +5.5V. Four
fixed gains are available: 25V/V, 50V/V, 100V/V, and
200V/V. The low offset of the Zerø-Drift architecture
enables current sensing with maximum drops across
the shunt as low as 10mV full-scale, or with wide
dynamic ranges of over 1000:1.
1
2
•
•
CHIP-SCALE PACKAGE
COMMON-MODE RANGE: +1.8V to +5.5V
OFFSET VOLTAGE: ±30μV
GAIN ERROR: ±0.2% MAX
CHOICE OF GAINS:
– INA216A1: 25V/V
– INA216A2: 50V/V
– INA216A3: 100V/V
– INA216A4: 200V/V
QUIESCENT CURRENT: 13μA
BUFFERED VOLTAGE OUTPUT: No Additional
Op Amp Needed
These devices operate from a single +1.8V to +5.5V
power supply, drawing a maximum of 25μA of supply
current. The INA216 series are specified over the
temperature range of –40°C to +125°C, and offered
in a chip-scale package.
Shunt
Supply:
+1.8V to +5.5V
Load
APPLICATIONS
•
•
•
•
•
NOTEBOOK COMPUTERS
CELL PHONES
TELECOM EQUIPMENT
POWER MANAGEMENT
BATTERY CHARGERS
R1
R2
IN+
IN-
1.6MW
1.6MW
GND
OUT
PRODUCT
GAIN
R1 = R2
INA216A1
INA216A2
INA216A3
INA216A4
25
50
100
200
64kW
32kW
16kW
8kW
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010–2011, Texas Instruments Incorporated
INA216
SBOS503C – JUNE 2010 – REVISED NOVEMBER 2011
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE INFORMATION (1)
PRODUCT
INA216A1
(1)
GAIN
25V/V
INA216A2
50V/V
INA216A3
100V/V
INA216A4
200V/V
PACKAGE-LEAD
PACKAGE
DESIGNATOR
PACKAGE MARKING
WCSP-4
YFF
OW
ThinQFN-10
RSW
SNJ
WCSP-4
YFF
OX
ThinQFN-10
RSW
SOJ
WCSP-4
YFF
OY
ThinQFN-10
RSW
SPJ
WCSP-4
YFF
OZ
ThinQFN-10
RSW
SQJ
For the most current package and ordering information see the Package Option Addendum at the end of this document, or visit the
device product folder at www.ti.com.
ABSOLUTE MAXIMUM RATINGS (1)
Over operating free-air temperature range, unless otherwise noted.
Supply Voltage
Analog Inputs,
VIN+, VIN– (2)
Output
Differential (VIN+)–(VIN–)
Common-Mode (3)
(3)
INA216
UNIT
+7
V
–5.5 to +5.5
V
GND–0.3V to +5.5
V
GND–0.3V to (V+)+0.3
V
5
mA
Operating Temperature
–55 to +150
°C
Storage Temperature
–65 to +150
°C
Junction Temperature
+150
°C
2.5
kV
1
kV
200
V
Input Current into Any Pin (3)
Human Body Model
ESD Ratings:
Charged Device Model
Machine Model
(1)
(2)
(3)
2
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively.
Input voltage at any pin may exceed the voltage shown if the current at that pin is limited to 5mA.
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SBOS503C – JUNE 2010 – REVISED NOVEMBER 2011
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THERMAL INFORMATION
INA216A1YFF,
INA216A2YFF
INA216A3YFF,
INA216A4YFF
THERMAL METRIC (1)
UNITS
YFF
4 PINS
θJA
Junction-to-ambient thermal resistance
160
θJC(top)
Junction-to-case(top) thermal resistance
75
θJB
Junction-to-board thermal resistance
76
ψJT
Junction-to-top characterization parameter
3
ψJB
Junction-to-board characterization parameter
74
θJC(bottom)
Junction-to-case(bottom) thermal resistance
n/a
(1)
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
THERMAL INFORMATION
INA216A1RSW,
INA216A2RSW
INA216A3RSW,
INA216A4RSW
THERMAL METRIC (1)
UNITS
RSW
10 PINS
θJA
Junction-to-ambient thermal resistance
114.9
θJC(top)
Junction-to-case(top) thermal resistance
66.3
θJB
Junction-to-board thermal resistance
21.4
ψJT
Junction-to-top characterization parameter
1.9
ψJB
Junction-to-board characterization parameter
21.4
θJC(bottom)
Junction-to-case(bottom) thermal resistance
N/A
(1)
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
PIN CONFIGURATIONS
RSW PACKAGE
ThinQFN-10
(TOP VIEW)
NC
(1)
NC
YFF PACKAGE
WCSP-4
(TOP VIEW)
(1)
A2
NC
(1)
8
7
6
5
IN-
9
OUT
10
1
NC
(1)
(1)
2
OUT
A1
IN+
GND
B2
IN-
4
IN-
3
IN+
B1
GND
(2)
Bump side down. Drawing not to scale.
(3)
Power supply is derived from shunt
(minimum common-mode range = 1.8V)
IN+
No internal connection.
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ELECTRICAL CHARACTERISTICS
Boldface limits apply over the specified temperature range, TA = –40°C to +125°C.
At TA = +25°C and VCM = VIN+= 4.2V, unless otherwise noted.
INA216
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
INPUT
Offset Voltage, RTI (1)
VOS
±30
±100
μV
dVOS/dT
0.06
0.2
μV/°C
±20
±75
μV
dVOS/dT
0.05
0.25
μV/°C
±20
±75
μV
dVOS/dT
0.03
0.25
μV/°C
±20
±75
μV
0.1
0.3
μV/°C
INA216A1
vs Temperature
INA216A2
vs Temperature
INA216A3
vs Temperature
INA216A4
vs Temperature
Common-Mode Input Range
dVOS/dT
VCM
Common-Mode Rejection (2)
CMRR
Power-Supply Rejection
PSRR
1.8
5.5
V
90
108
dB
90
108
dB
3
μA
INA216A1
25
V/V
INA216A2
50
V/V
INA216A3
100
V/V
INA216A4
200
V/V
Input Bias Current
VIN+ = +1.8V to +5.5V
IIN–
OUTPUT
Gain
G
Gain Error
INA216A1
VOUT = 0.2V to VOUT = 2.5V
±0.01
±0.2
%
vs Temperature
VOUT = 0.2V to VOUT = 2.5V
0.01
0.025
m%/°C
INA216A2
0.05
±0.2
%
vs Temperature
0.017
0.1
m%/°C
INA216A3
0.06
±0.2
%
vs Temperature
0.023
0.1
m%/°C
INA216A4
0.03
±0.2
%
vs Temperature
0.076
0.3
m%/°C
Nonlinearity Error
Maximum Capacitive Load
No sustained oscillation
VOLTAGE OUTPUT (3)
±0.01
%
750
pF
RL = 10kΩ to GND
(V+) –0.1
(V+) –0.3
V
Swing to GND (3)
(VGND) +0.001
(VGND) +0.002
V
Output Impedance
42
Ω
INA216A1
20
kHz
INA216A2
10
kHz
INA216A3
5
kHz
INA216A4
2.5
kHz
Swing to V+ Power-Supply Rail
FREQUENCY RESPONSE
Bandwidth
(1)
(2)
(3)
4
BW
CLOAD = 10pF
RTI: Referred-to-input.
CMRR and PSRR are the same because VCM is the supply voltage.
See Typical Characteristics graph, Output Swing to Rail (Figure 9).
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ELECTRICAL CHARACTERISTICS (continued)
Boldface limits apply over the specified temperature range, TA = –40°C to +125°C.
At TA = +25°C and VCM = VIN+= 4.2V, unless otherwise noted.
INA216
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
FREQUENCY RESPONSE, continued
Slew Rate
SR
0.03
V/μs
60
nV/√Hz
NOISE, RTI (4)
Voltage Noise Density
POWER SUPPLY
Specified Range
Quiescent Current
VIN+
+1.8
IQ
13
Over Temperature
TURN-ON TIME
VIN+ = 0 to +2.5V; VSENSE = 10mV; VOUT ±0.5%
+5.5
V
25
μA
30
μA
μs
200
TEMPERATURE RANGE
–40
Specified Temperature Range
(4)
+125
°C
RTI: Referred-to-input.
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TYPICAL CHARACTERISTICS
The INA216A1 is used for typical characteristic measurements at TA = +25°C, VS = +4.2V, unless otherwise noted.
INPUT OFFSET VOLTAGE PRODUCTION DISTRIBUTION
OFFSET VOLTAGE vs TEMPERATURE
100
11,604 Units Sampled
80
Population
Offset Voltage (mV)
60
40
20
0
-20
-40
-60
-80
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100
-100
0
-60 -40 -20
20
Offset Voltage (mV)
Figure 1.
60
GAIN ERROR vs TEMPERATURE
8
0.04
7
0.03
6
Eight Typical Units
0.02
Gain Error (%)
5
4
3
2
1
0.01
0
-0.01
-0.02
0
-0.03
-1
-2
-0.04
-60 -40 -20
0
20
40
60
80 100 120 140 160
0
-60 -40 -20
20
Temperature (°C)
40
60
80 100 120 140 160
Temperature (°C)
Figure 3.
Figure 4.
QUIESCENT CURRENT AND NEGATIVE INPUT BIAS
CURRENT vs TEMPERATURE
GAIN vs FREQUENCY
55
16
INA216A4
14
45
Gain (dB)
8
6
INA216A2
35
IQ
10
IB-
VSENSE = 10mV Sine
INA216A3
12
Current (mA)
80 100 120 140 160
Figure 2.
COMMON-MODE REJECTION RATIO vs TEMPERATURE
CMRR (mV/V)
40
Temperature (°C)
25
INA216A1
15
4
5
2
-5
0
-60 -40 -20
6
0
20
40
60
80 100 120 140 160
100
1k
10k
Temperature (°C)
Frequency (Hz)
Figure 5.
Figure 6.
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100k
1M
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TYPICAL CHARACTERISTICS (continued)
The INA216A1 is used for typical characteristic measurements at TA = +25°C, VS = +4.2V, unless otherwise noted.
QUIESCENT CURRENT AND NEGATIVE INPUT BIAS
CURRENT vs VSENSE
COMMON-MODE REJECTION RATIO vs FREQUENCY
140
16
14
120
12
Current (mA)
CMRR (dB)
100
80
60
40
IQ
10
Normal Range
of Operation
8
6
IB-
4
2
20
0
0
1
10
100
1k
10k
-2
-0.4
100k
-0.3
-0.2
Frequency (Hz)
0.1
0.2
0.3
0.4
Figure 8.
INPUT-REFERRED VOLTAGE NOISE vs FREQUENCY
Input-Referred Voltage Noise (nV/ÖHz)
OUTPUT VOLTAGE SWING vs OUTPUT CURRENT
Output Voltage Swing (V)
0
VSENSE (mV)
Figure 7.
V+
(V+) - 0.05
(V+) - 0.10
(V+) - 0.15
(V+) - 0.20
(V+) - 0.25
(V+) - 0.30
0.1
TA = -40?C
TA = +25?C
TA = +125?C
Sourcing
GND + 0.30
GND + 0.25
GND + 0.20
GND + 0.15
GND + 0.10
GND + 0.05
GND
Sinking
180
140
100
60
20
0
1
2
3
4
5
6
1
10
100
Output Current (mA)
Frequency (Hz)
Figure 9.
Figure 10.
0.1Hz to 10Hz VOLTAGE NOISE, RTI
STEP RESPONSE
(80mVPP Input Step)
1k
10k
80mVPP Input Signal
Input Voltage
(20mV/div)
Voltage Noise,
Referred-to-Input (200nV/div)
Output Voltage
(0.5V/div)
2VPP Output Signal
Time (1s/div)
Time (100ms/div)
Figure 11.
Figure 12.
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TYPICAL CHARACTERISTICS (continued)
The INA216A1 is used for typical characteristic measurements at TA = +25°C, VS = +4.2V, unless otherwise noted.
INVERTING DIFFERENTIAL INPUT OVERLOAD
Output
1V/div
Common-Mode Voltage (1V/div)
COMMON-MODE VOLTAGE TRANSIENT RESPONSE
Common-Mode
Voltage Step
Inverting Input Overload
50mV/div
0V
0V
Output Voltage
VSENSE = 100mV
Output Signal
Inverting Input
Overload Signal
Time (100ms/div)
Time (100ms/div)
Figure 14.
NONINVERTING DIFFERENTIAL INPUT OVERLOAD
STARTUP RESPONSE
Common-Mode/
Supply Voltage
Output Signal
1V/div
Noninverting Input Overload Output
1V/div
50mV/div
Figure 13.
Noninverting Input
Overload Signal
Output
Voltage
Time (100ms/div)
Time (100ms/div)
Figure 15.
Figure 16.
BROWNOUT RECOVERY
1V/div
Common-Mode/
Supply Voltage
Output
Voltage
Time (100ms/div)
Figure 17.
8
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APPLICATION INFORMATION
Basic Connections
VCM
IN+
Figure 18 shows the basic connections of the
INA216. The input pins, IN+ and IN–, should be
connected as closely as possible to the shunt resistor
to minimize any resistance in series with the shunt
resistance.
GND
RP
VOUT
RSHUNT
RP
ININA216
VCM = 1.8 V
to 5.5V
Load
IN+
GND
RSHUNT
VOUT
Figure 20. Shunt Resistance Measurement Using
a Kelvin Connection
ININA216
Power Supply
Load
Figure 18. Typical Application
Figure 19 illustrates the INA216 connected to a shunt
resistor with additional trace resistance in series with
the shunt placed between where the current shunt
monitors the input pins. With the typically low shunt
resistor values commonly used in these applications,
even small amounts of additional impedance in series
with the shunt resistor can significantly affect the
differential voltage present at the INA216 input pins.
VCM
IN+
GND
RSHUNT
VOUT
RP
RP
ININA216
Load
Figure 19. Shunt Resistance Measurement
Including Trace Resistance, RP
Figure 20 shows a proper Kelvin, or four-wire,
connection of the shunt resistor to the INA216 input
pins. This connection helps ensure that the only
impedance between the current monitor input pins is
the shunt resistor.
The INA216 does not have a dedicated power-supply
pin. Instead, an internal connection to the IN+ pin
serves as the power supply for this device. Because
the INA216 is powered from the IN+ pin, the
common-mode input range is limited on the low end
to 1.8V. Therefore, the INA216 cannot be used as a
low-side current shunt monitor.
Selecting RS
The selection of the value of the shunt resistor (RS) to
use with the INA216 is based on the specific
operating conditions and requirements of the
application. The starting point for selecting the
resistor is to first determine the desired full-scale
output from the INA216. The INA216 is available in
four gain options: 25, 50, 100, and 200. By dividing
the desired full-scale output by each of the gain
options, there are then four available differential input
voltages that can achieve the desired full-scale output
voltage, given that the appropriate gain device is
used. With four values for the total voltage that is to
be dropped across the shunt, the decision on how
much of a drop is allowed in the application must be
made. Most applications have a maximum drop
allowed to ensure that the load receives the required
voltage necessary to operate. Assuming that there
are now multiple shunt voltages that are acceptable
(based on the design criteria), the choice of what
value shunt resistor to use can be made based on
accuracy. As a result of the INA216 auto-zero
architecture, the input offset voltage is extremely low.
However, even the 100μV maximum input offset
voltage specification plays a role in the decision of
which shunt resistor value to choose. With a larger
shunt voltage present at the current shunt monitor
input, less error is introduced by the input offset
voltage.
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These comments have framed the decision on what
the shunt resistor value should be, based on the
full-scale value; but many applications require
accurate measurements at levels as low as 10% of
the full-scale value. At this level, the input offset
voltage of the current shunt monitor becomes a larger
percentage of the shunt voltage, and thus contributes
a larger error to the output. The percentage of error
created by the input offset voltage relative to the
shunt voltage is shown in Equation 1.
VOS
Error_VOS =
? 100
VSENSE
(1)
Ideally, the differential input voltage at 10% would be
increased to minimize the effects of the input offset
voltage; however, we are bound by the full-scale
value. The full-scale output voltage on the INA216 is
limited to 200mV below the supply voltage (IN+).
Selecting a shunt resistor to increase the shunt
voltage at the low operating range of the load current
could easily saturate the output of the current shunt
monitor at the full-scale load current. For applications
where accuracy over a larger range is needed, a
lower gain option (and therefore, a larger differential
input voltage) is selected. For applications where a
minimal voltage drop on the line that powers the load
is required, a higher gain option (and so, a smaller
differential input voltage) is selected.
For example, consider a design that requires a
full-scale output voltage of 4V, a maximum load
current of 10A, and a maximum voltage drop on the
common-mode line of 25mV. The 25mV maximum
voltage drop requirement and a 4V full-scale output
limits the gain option to the 200V/V device. A 100V/V
setting would require a maximum voltage drop of
40mV with the other two lower gain versions creating
larger voltage drops. Based on the gain of 200 on a
4V full-scale output, the maximum differential input
voltage would be 20mV. The shunt resistor needed to
create a 20mV drop with a 10A load current is 2mΩ.
When choosing the proper shunt resistor, it is also
important to consider that at higher currents, the
power dissipation in the shunt resistor becomes
greater. Therefore, it is important to evaluate the drift
of the sense resistor as a result of power dissipation,
and choose an appropriate resistor based on its
power wattage rating.
10
Calculating Total Error
The electrical specifications for the INA216 include
the typical individual errors terms such as gain error,
offset error, and nonlinearity error. Total error
including all of these individual error components is
not specified in the Electrical Characteristics table. To
accurately calculate the error that can be expected
from the device, we must first know the operating
conditions to which the device is subjected. Some
current shunt monitors specify a total error in the
product data sheet. However, this total error term is
accurate under only one particular set of operating
conditions. Specifying the total error at this one point
has little practical value, though, because any
deviation from these specific operating conditions no
longer yields the same total error value. This section
discusses the individual error sources, with
information on how to apply them in order to calculate
the total error value for the device under normal
operating conditions.
The typical error sources that have the largest impact
on the total error of the device are input offset
voltage, common-mode voltage rejection, gain error,
and nonlinearity error.
The nonlinearity error of the INA216 is relatively low
compared to the gain error specification, which
results in a gain error that can be expected to be
relatively constant throughout the linear input range of
the device. While the gain error remains constant
across the linear input range of the device, the error
associated with the input offset voltage does not. As
the differential input voltage developed across a
shunt resistor at the input of the INA216 decreases,
the inherent input offset voltage of the device
becomes a larger percentage of the measured input
signal, resulting in an increase in measurement error.
This varying error is present among all current shunt
monitors, given the input offset voltage ratio to the
voltage being sensed by the device. The low input
offset voltages present in the INA216 devices,
however, limit the amount of contribution the offset
voltage has on the total error term.
Two examples are provided that detail how different
operating conditions can affect the total error
calculations. Typical and maximum calculations are
shown as well to provide the user more information
on how much error variance could be present from
device to device.
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Example 1
Conditions: INA216A3; VCM = VS = 3.3V; VSENSE = 20mV
Table 1. Example 1
TERM
LABEL
EQUATION
TYPICAL
MAXIMUM
Maximum initial input
offset voltage
VIO
—
20μV
75μV
3.6μV
28μV
Added input offset
voltage as result of
common-mode
voltage
1
VIO_CM
(
( CMRR_dB
20
· |4.2V - VCM|
10
Total input offset
voltage
VIO_Total
(VIO) + (VIO_CM)
20μV
80μV
Error because of
input offset voltage
Error_VIO
VIO_Total
· 100
VSENSE
0.1%
0.4%
Gain error
Error_Gain
—
0.06%
0.2%
Error_Lin
—
0.01%
0.01%
0.12%
0.45%
Nonlinearity error
2
2
2
Total error
2
(Error_VIO) + (Error_Gain) + (Error_Lin)
2
Example 2
Conditions: INA216A1; VCM = VS = 5V; VSENSE = 160mV
Table 2. Example 2
TERM
LABEL
EQUATION
TYPICAL
MAXIMUM
Maximum initial input
offset voltage
VIO
—
30μV
100μV
3.1μV
25.2μV
Added input offset
voltage as result of
common-mode
voltage
1
VIO_CM
(
( CMRR_dB
20
· |4.2V - VCM|
10
Total input offset
voltage
VIO_Total
(VIO) + (VIO_CM)
30μV
100μV
Error because of
input offset voltage
Error_VIO
VIO_Total
· 100
VSENSE
0.02%
0.06%
Gain error
Error_Gain
—
0.01%
0.2%
Error_Lin
—
0.01%
0.01%
0.025%
0.21%
Nonlinearity error
Total error
2
2
2
2
(Error_VIO) + (Error_Gain) + (Error_Lin)
2
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Copyright © 2010–2011, Texas Instruments Incorporated
Product Folder Link(s): INA216
11
INA216
SBOS503C – JUNE 2010 – REVISED NOVEMBER 2011
www.ti.com
Input Filtering
An ideal location where filtering is implemented is at
the inputs for a device. Placing an input filter in front
of the INA216, though, is not recommended but can
be implemented if it is determined to be necessary.
This location is not recommended for filtering
because adding input filters induces an additional
gain error to the device that can easily exceed the
device maximum gain error specification of 0.2%. In
the INA216, the nominal current into the IN+ pin is in
the range of 13μA while the bias current into the IN–
pin is in the range of approximately 3μA. The current
flowing into the IN+ pin includes both the input bias
current as well as the quiescent current. Where the
issue of input filtering begins to become more of an
issue is that as the quiescent current of the INA216
also flows through the IN+ pin, when the output
begins to drive current, this additional current also
flows through the IN+ pin, creating an even larger
error.
Placing a typical common-mode filter of 10Ω in series
with each input and a 0.1μF capacitor across the
input pins, as shown in Figure 21, introduces an
additional gain error into the system. For example,
consider an application using the INA216A3 with a
full-scale output of 4V, assuming that the device is
not driving any output current. The shunt voltage
needed to create the 4V output with a gain of 100 is
40mV. With 10Ω filter resistors on each input, there is
a difference voltage created that subtracts from the
40mV full-scale differential current. The error can be
calculated using Equation 2.
(I - I ) ? RFILTER
Error_RFILTER = IN+ IN? 100
VSHUNT
(2)
RFILTER
? 10W
VCM
RSHUNT
IN+
GND
If filtering is required for the application and the gain
error introduced by the input filter resistors exceeds
the available error budget for this circuit, a filter can
be implemented following the INA216. Placing a filter
at the output of the current shunt monitor is not
typically the ideal location because the benefit of the
low impedance output of the amplifier is lost.
Applications that require the low impedance output
require an additional buffer amplifier that follows the
post current shunt monitor filter.
Using the INA216 With Transients Above 5.5V
With a small amount of additional circuitry, INA216
can be used in circuits subject to transients higher
than 5.5V. Use only zener diode or zener-type
transient absorbers, which are sometimes referred to
as Transzorbs. Any other type of transient absorber
has an unacceptable time delay. To use these
protection devices, resistors are required in series
with the INA216 inputs, as shown in Figure 22. These
resistors serve as a working impedance for the zener.
It is desirable to keep these resistors as small as
possible because of the error described in the Input
Filtering section. These protection resistors are most
often around 10Ω. Larger values can be used with a
greater impact to the total gain error. Because this
circuit limits only short-term transients, many
applications are satisfied with a 10Ω resistor along
with conventional zener diodes of the lowest power
rating that can be found. This combination uses the
least amount of board space. These diodes can be
found in packages as small as SOT-523 or SOD-523.
The use of these protection components may allow
the INA216 to survive from being damaged in
environments where large transients are common.
VOUT
CFILTER
RFILTER
? 10W
driving any current). Connecting a 100kΩ load to the
4V output now increases the current by an additional
40μA. This increase in current flowing through the
IN+ pin would change the additional gain error from
0.3% to 1.3%.
RPROTECT
? 10W
VCM
IN-
IN+
GND
INA216
Load
Z1
VOUT
RSHUNT
RPROTECT
? 10W
Figure 21. Input Filter
ININA216
Load
As mentioned previously, the current flowing into the
IN+ pin increases once the output begins to drive
current because of the quiescent current also flowing
into the IN+ pin. The previous example resulted in an
additional gain error of 0.3% as a result of the 10Ω
filter resistors (assuming the output stage was not
12
Z2
Figure 22. Transient Protection Using Dual Zener
Diodes
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Copyright © 2010–2011, Texas Instruments Incorporated
Product Folder Link(s): INA216
INA216
SBOS503C – JUNE 2010 – REVISED NOVEMBER 2011
www.ti.com
REVISION HISTORY
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (June 2010) to Revision C
Page
•
Changed product status from Mixed Status to Production Data .......................................................................................... 1
•
Updated Package Information table to include RSW package information .......................................................................... 2
•
Added Thermal Information table for RSW package ............................................................................................................ 3
•
Added RSW package pinout drawing ................................................................................................................................... 3
Changes from Revision A (June, 2010) to Revision B
Page
•
Removed product preview status of INA216A2, INA216A3, and INA216A4 devices ........................................................... 2
•
Added offset voltage specifications for INA216A2, INA216A3, and INA216A4 .................................................................... 4
•
Added gain and gain error specifications for INA216A2, INA216A3, and INA216A4 ........................................................... 4
•
Added bandwidth specifications for INA216A2, INA216A3, and INA216A4 ......................................................................... 4
•
Updated graph grid for Figure 2 through Figure 5 ................................................................................................................ 6
•
Revised Table 1 and Table 2 .............................................................................................................................................. 11
•
Changed description of nominal current into IN+ pin to 13μA and bias current into IN– pin to 3μA .................................. 12
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Copyright © 2010–2011, Texas Instruments Incorporated
Product Folder Link(s): INA216
13
PACKAGE OPTION ADDENDUM
www.ti.com
30-Oct-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
INA216A1RSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SNJ
INA216A1RSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SNJ
INA216A1YFFR
ACTIVE
DSBGA
YFF
4
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
OW
INA216A1YFFT
ACTIVE
DSBGA
YFF
4
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
OW
INA216A2RSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SOJ
INA216A2RSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SOJ
INA216A2YFFR
ACTIVE
DSBGA
YFF
4
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
OX
INA216A2YFFT
ACTIVE
DSBGA
YFF
4
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
OX
INA216A3RSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SPJ
INA216A3RSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SPJ
INA216A3YFFR
ACTIVE
DSBGA
YFF
4
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
OY
INA216A3YFFT
ACTIVE
DSBGA
YFF
4
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
OY
INA216A4RSWR
ACTIVE
UQFN
RSW
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SQJ
INA216A4RSWT
ACTIVE
UQFN
RSW
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SQJ
INA216A4YFFR
ACTIVE
DSBGA
YFF
4
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
OZ
INA216A4YFFT
ACTIVE
DSBGA
YFF
4
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 125
OZ
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
30-Oct-2021
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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