0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
INA229AQDGSRQ1

INA229AQDGSRQ1

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    VSSOP10

  • 描述:

    INA229AQDGSRQ1

  • 数据手册
  • 价格&库存
INA229AQDGSRQ1 数据手册
INA229-Q1 SLYS024A – MAY 2020 – REVISED JUNE 2021 INA229-Q1 AEC-Q100, 85-V, 20-Bit, Ultra-Precise Power/Energy/Charge Monitor With SPI Interface 1 Features 3 Description • The INA229-Q1 is an ultra-precise digital power monitor with a 20-bit delta-sigma ADC specifically designed for current-sensing applications. The device can measure a full-scale differential input of ±163.84 mV or ±40.96 mV across a resistive shunt sense element with common-mode voltage support from – 0.3 V to +85 V. • • • • • • • • • • • • • • • AEC-Q100 qualified for automotive applications: – Temperature grade 1: –40°C to +125°C, TA Functional Safety-Capable – Documentation available to aid functional safety system design High-resolution, 20-bit delta-sigma ADC Current monitoring accuracy: – Offset voltage: ±1 µV (maximum) – Offset drift: ±0.01 µV/°C (maximum) – Gain error: ±0.05% (maximum) – Gain error drift: ±20 ppm/°C (maximum) – Common mode rejection: 154 dB (minimum) Power monitoring accuracy: – 0.5% full scale, –40°C to +125°C (maximum) Energy and charge accuracy: – 1.0% full scale (maximum) Fast alert response: 75 μs Wide common-mode range: –0.3 V to +85 V Bus voltage sense input: 0 V to 85 V Shunt full-scale differential range: ±163.84 mV / ±40.96 mV Input bias current: 2.5 nA (maximum) Temperature sensor: ±1°C (maximum at 25°C) Programmable resistor temperature compensation Programmable conversion time and averaging 10-MHz SPI communication interface Operates from a 2.7-V to 5.5-V supply: – Operational current: 640 µA (typical) – Shutdown current: 5 µA (maximum) The INA229-Q1 reports current, bus voltage, temperature, power, energy and charge accumulation while employing a precision ±0.5% integrated oscillator, all while performing the needed calculations in the background. The integrated temperature sensor is ±1°C accurate for die temperature measurement and is useful in monitoring the system ambient temperature. The low offset and gain drift design of the INA229Q1 allows the device to be used in precise systems that do not undergo multi-temperature calibration during manufacturing. Further, the very low offset voltage and noise allow for use in mA to kA sensing applications and provide a wide dynamic range without significant power dissipation losses on the sensing shunt element. The low input bias current of the device permits the use of larger currentsense resistors, thus providing accurate current measurements in the micro-amp range. The device allows for selectable ADC conversion times from 50 µs to 4.12 ms as well as sample averaging from 1x to 1024x, which further helps reduce the noise of the measured data. 2 Applications • • • • Automotive battery management systems EV / HEV mA - KA sense applications DC/DC converters and power inverters ADAS domain controllers Device Information(1) PART NUMBER PACKAGE INA229-Q1 (1) VSSOP (10) BODY SIZE (NOM) 3.00 mm × 3.00 mm For all available packages, see the package option addendum at the end of the data sheet. VS Power Reference IN+ INMUX 20 Bit ADC VBUS Voltage Current Power Energy Charge Temp Oscillator Out-of-range Threshold SCLK SPI MOSI MISO CS + ALERT ± GND Simplified Block Diagram An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. INA229-Q1 www.ti.com SLYS024A – MAY 2020 – REVISED JUNE 2021 Table of Contents 1 Features............................................................................1 2 Applications..................................................................... 1 3 Description.......................................................................1 4 Revision History.............................................................. 2 5 Pin Configuration and Functions...................................3 6 Specifications.................................................................. 3 6.1 Absolute Maximum Ratings ....................................... 3 6.2 ESD Ratings .............................................................. 4 6.3 Recommended Operating Conditions ........................4 6.4 Thermal Information ...................................................4 6.5 Electrical Characteristics ............................................5 6.6 Timing Requirements (SPI) ........................................7 6.7 Timing Diagram ..........................................................7 6.8 Typical Characteristics................................................ 8 7 Detailed Description......................................................12 7.1 Overview................................................................... 12 7.2 Functional Block Diagram......................................... 12 7.3 Feature Description...................................................12 7.4 Device Functional Modes..........................................18 7.5 Programming............................................................ 18 7.6 Register Maps...........................................................20 8 Application and Implementation.................................. 30 8.1 Application Information............................................. 30 8.2 Typical Application.................................................... 35 9 Power Supply Recommendations................................39 10 Layout...........................................................................39 10.1 Layout Guidelines................................................... 39 10.2 Layout Example...................................................... 39 11 Device and Documentation Support..........................40 11.1 Receiving Notification of Documentation Updates.. 40 11.2 Support Resources................................................. 40 11.3 Trademarks............................................................. 40 11.4 Electrostatic Discharge Caution.............................. 40 11.5 Glossary.................................................................. 40 12 Mechanical, Packaging, and Orderable Information.................................................................... 40 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision * (May 2020) to Revision A (June 2021) Page • Changed data sheet status from: Advanced Information to: Production Data....................................................1 • Added Functional Safety bullets......................................................................................................................... 1 • Updated the numbering format for tables, figures, and cross-references throughout the document..................1 • Updated the figures and equations throughput the document to align with the commercial data sheet.............1 2 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA229-Q1 INA229-Q1 www.ti.com SLYS024A – MAY 2020 – REVISED JUNE 2021 5 Pin Configuration and Functions CS 1 10 IN+ MOSI 2 9 IN– ALERT 3 8 VBUS MISO 4 7 GND SCLK 5 6 VS Not to scale Figure 5-1. DGS Package 10-Pin VSSOP Top View Table 5-1. Pin Functions PIN NO. TYPE NAME DESCRIPTION 1 CS Digital input SPI chip select (Active Low). 2 MOSI Digital input SPI digital data input. 3 ALERT Digital output Open-drain alert output, default state is active low. 4 MISO Digital output SPI digital data output (push-pull). 5 SCLK Digital input 6 VS Power supply 7 GND Ground 8 VBUS Analog input Bus voltage input. 9 IN– Analog input Negative input to the device. For high-side applications, connect to load side of sense resistor. For low-side applications, connect to ground side of sense resistor. 10 IN+ Analog input Positive input to the device. For high-side applications, connect to power supply side of sense resistor. For low-side applications, connect to load side of sense resistor. SPI clock input. Power supply, 2.7 V to 5.5 V. Ground. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)(1) MIN VS Supply voltage VIN+, VIN– (2) V –40 40 V Common-mode –0.3 85 V –0.3 85 V GND – 0.3 vs. + 0.3 V VIO MOSI, MISO, SCLK, ALERT IIN Input current into any pin IOUT Digital output current TJ Junction temperature Tstg Storage temperature (2) UNIT 6 Differential (VIN+) – (VIN–) VVBUS (1) MAX –65 5 mA 10 mA 150 °C 150 °C Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA229-Q1 3 INA229-Q1 www.ti.com SLYS024A – MAY 2020 – REVISED JUNE 2021 6.2 ESD Ratings VALUE V(ESD) (1) Electrostatic discharge Human body model (HBM), per AEC Q100-002, all ESD Classification Level 2 pins(1) HBM Charged device model (CDM), per AEC Q100-011, all pins CDM ESD Classification Level C6 UNIT ±2000 V ±1000 AEC Q100-002 indicated that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VCM Common-mode input range –0.3 85 V VS Operating supply range 2.7 5.5 V TA Ambient temperature –40 125 °C 6.4 Thermal Information INA229-Q1 THERMAL METRIC(1) DGS UNIT 10 PINS RθJA Junction-to-ambient thermal resistance 177.6 °C/W RθJC(top) Junction-to-case (top) thermal resistance 66.4 °C/W RθJB Junction-to-board thermal resistance 99.5 °C/W ΨJT Junction-to-top characterization parameter 9.7 °C/W YJB Junction-to-board characterization parameter 97.6 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W (1) 4 For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA229-Q1 INA229-Q1 www.ti.com SLYS024A – MAY 2020 – REVISED JUNE 2021 6.5 Electrical Characteristics at TA = 25 °C, VS = 3.3 V, VSENSE = VIN+ – VIN– = 0 V, VCM = VIN– = 48 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT INPUT VCM Common-mode input range VVBUS Bus voltage input range CMRR Common-mode rejection VDIFF Shunt voltage input range TA = –40 °C to +125 °C –0.3 V < VCM < 85 V, TA = –40 °C to +125 °C –0.3 85 V 0 85 V 154 TA = –40 °C to +125 °C, ADCRANGE = 0 –163.84 TA = –40 °C to +125 °C, ADCRANGE = 1 –40.96 170 VCM = 48 V, TCT > 280 µs ±0.3 dB 163.84 mV 40.96 mV ±1 µV Vos Shunt offset voltage VCM = 0 V, TCT > 280 µs ±0.3 ±1 µV dVos/dT Shunt offset voltage drift TA = –40 °C to +125 °C ±2 ±10 nV/°C PSRR Shunt offset voltage vs. power supply VS = 2.7 V to 5.5 V, TA = –40 °C to +125 °C ±0.05 ±0.5 µV/V Vos_bus VBUS offset voltage VBUS = 20 mV ±1 ±2.5 mV dVos/dT VBUS offset voltage drift TA = –40 °C to +125 °C ±4 ±20 µV/°C PSRR VBUS offset voltage vs. power supply VS = 2.7 V to 5.5 V IB Input bias current Either input, IN+ or IN–, VCM = 85 V ZVBUS VBUS pin input impedance Active mode IVBUS VBUS pin leakage current Shutdown mode, VBUS = 85 V 10 nA RDIFF Input differential impedance Active mode, VIN+ – VIN– < 164 mV 92 kΩ ±0.25 0.8 mV/V 0.1 2.5 nA 1 1.2 MΩ DC ACCURACY GSERR Shunt voltage gain error VCM = 24 V GS_DRFT Shunt voltage gain error drift GBERR VBUS voltage gain error GB_DRFT VBUS voltage gain error drift PTME Power total measurment error (TME) TA = –40 °C to +125 °C, at full scale ETME Energy and charge TME at full scale power ±0.05 % ±0.5 ±1 % % 20 Bits Shunt voltage, ADCRANGE = 0 312.5 nV Shunt voltage, ADCRANGE = 1 78.125 nV Bus voltage Conversion time field = 0h ADC conversion-time(1) ±0.01 % ±20 ppm/°C Temperature TCT ±0.05 ±20 ppm/°C ADC resolution 1 LSB step size ±0.01 195.3125 µV 7.8125 m°C 50 Conversion time field = 1h 84 Conversion time field = 2h 150 Conversion time field = 3h 280 Conversion time field = 4h 540 Conversion time field = 5h 1052 Conversion time field = 6h 2074 Conversion time field = 7h 4120 µs INL Integral Non-Linearity ±2 m% DNL Differential Non-Linearity 0.2 LSB CLOCK SOURCE FOSC Internal oscillator frequency FOSC_TOL Internal oscillator frequency tolerance 1 TA = 25 °C TA = –40 °C to +125 °C MHz ±0.5 % ±1 % Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA229-Q1 5 INA229-Q1 www.ti.com SLYS024A – MAY 2020 – REVISED JUNE 2021 6.5 Electrical Characteristics (continued) at TA = 25 °C, VS = 3.3 V, VSENSE = VIN+ – VIN– = 0 V, VCM = VIN– = 48 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT TEMPERATURE SENSOR Measurement range Temperature accuracy –40 TA = 25 °C TA = –40 °C to +125 °C +125 °C ±0.15 ±1 °C ±0.2 ±2 °C 5.5 V 640 750 µA 1.1 mA 5 µA POWER SUPPLY VS Supply voltage IQ Quiescent current IQSD Quiescent current, shutdown TPOR Device start-up time 2.7 VSENSE = 0 V VSENSE = 0 V, TA = –40 °C to +125 °C Shuntdown mode 2.8 Power-up (NPOR) 300 From shutdown mode µs 60 DIGITAL INPUT / OUTPUT VIH Logic input level, high VIL Logic input level, low VOL Logic output level, low IOL = 1 mA VOH Logic output level, high IOL = 1 mA IIO_LEAK Digital leakage input current 0 ≤ VIN ≤ VS (1) 6 1.2 VS V GND 0.4 V GND 0.4 V VS – 0.4 VS V –1 1 µA Subject to oscillator accuracy and drift Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA229-Q1 INA229-Q1 www.ti.com SLYS024A – MAY 2020 – REVISED JUNE 2021 6.6 Timing Requirements (SPI) MIN NOM MAX UNIT 10 MHz SERIAL INTERFACE fSPI SPI bit frequency tSCLK_H SCLK high time 40 ns tSCLK_L SCLK low time 40 ns tCSF_SCLKR CS fall to first SCLK rise time 10 ns tSCLKF_CSR Last SCLK fall to CS rise time 10 ns (1) tFRM_DLY Sequential transfer delay tMOSI_RF MOSI Rise and Fall time, 10 MHz SCLK tMOSI_ST MOSI data setup time 10 tMOSI_HLD MOSI data hold time 20 tMISO_RF MISO Rise and Fall time, CLOAD = 200 pF tMISO_ST MISO data setup time 20 ns tMISO_HLD MISO data hold time 20 ns tCS_MISO_DLY CS falling edge to MISO data valid delay time 25 ns tCS_MISO_HIZ CS rising edge to MISO high impedance delay time 25 ns (1) 50 ns 15 ns ns ns 15 ns Optional. The SPI interface can operate without the CS pin assistance as long as the pin is held low. 6.7 Timing Diagram tFRM_DLY CS tCSF_SCLKR tSCLK_H tSCLK_L tSCLK_L tSCLKF_CSR SCLK tMOSI_RF tMOSI_ST MOSI undefined tMOSI_HLD MSB LSB tCS_MISO_HIZ tMISO_RF MISO High-Z MSB tCS_MISO_DLY undefined LSB X High-Z tMISO_HLD tMISO_ST Figure 6-1. SPI Timing Diagram Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA229-Q1 7 INA229-Q1 www.ti.com SLYS024A – MAY 2020 – REVISED JUNE 2021 6.8 Typical Characteristics at TA = 25 °C, VVS = 3.3 V, VCM = 48 V, VSENSE = 0, and VVBUS = 48 V (unless otherwise noted) VCM = 48 V VCM = 0 V Figure 6-2. Shunt Input Offset Voltage Production Distribution Figure 6-3. Shunt Input Offset Voltage Production Distribution Figure 6-4. Shunt Input Offset Voltage vs. Temperature Figure 6-5. Common-Mode Rejection Ratio Production Distribution Figure 6-6. Shunt Input Common-Mode Rejection Ratio vs. Temperature VCM = 24 V Figure 6-7. Shunt Input Gain Error Production Distribution 8 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA229-Q1 INA229-Q1 www.ti.com SLYS024A – MAY 2020 – REVISED JUNE 2021 6.8 Typical Characteristics (continued) at TA = 25 °C, VVS = 3.3 V, VCM = 48 V, VSENSE = 0, and VVBUS = 48 V (unless otherwise noted) Figure 6-9. Shunt Input Gain Error vs. Common-Mode Voltage VCM = 24 V Figure 6-8. Shunt Input Gain Error vs. Temperature VVBUS = 20 mV VVBUS = 20 mV Figure 6-10. Bus Input Offset Voltage Production Distribution Figure 6-12. Bus Input Gain Error Production Distribution Figure 6-11. Bus Input Offset Voltage vs. Temperature Figure 6-13. Bus Input Gain Error vs. Temperature Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA229-Q1 9 INA229-Q1 www.ti.com SLYS024A – MAY 2020 – REVISED JUNE 2021 6.8 Typical Characteristics (continued) at TA = 25 °C, VVS = 3.3 V, VCM = 48 V, VSENSE = 0, and VVBUS = 48 V (unless otherwise noted) 10 Figure 6-14. Input Bias Current vs. Differential Input Voltage Figure 6-15. Input Bias Current (IB+ or IB–) vs. Common-Mode Voltage Figure 6-16. Input Bias Current vs. Temperature Figure 6-17. Input Bias Current vs. Temperature, Shutdown Figure 6-18. Active IQ vs. Temperature Figure 6-19. Active IQ vs. Supply Voltage Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA229-Q1 INA229-Q1 www.ti.com SLYS024A – MAY 2020 – REVISED JUNE 2021 6.8 Typical Characteristics (continued) at TA = 25 °C, VVS = 3.3 V, VCM = 48 V, VSENSE = 0, and VVBUS = 48 V (unless otherwise noted) Figure 6-20. Shutdown IQ vs. Supply Voltage Figure 6-21. Shutdown IQ vs. Temperature Figure 6-22. Active IQ vs. Clock Frequency Figure 6-23. Shutdown IQ vs. Clock Frequency Figure 6-24. Internal Clock Frequency vs. Power Supply Figure 6-25. Internal Clock Frequency vs. Temperature Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA229-Q1 11 INA229-Q1 www.ti.com SLYS024A – MAY 2020 – REVISED JUNE 2021 7 Detailed Description 7.1 Overview The INA229-Q1 device is a digital current sense amplifier with a 4-wire SPI digital interface. It measures shunt voltage, bus voltage and internal temperature while calculating current, power, energy and charge necessary for accurate decision making in precisely controlled systems. Programmable registers allow flexible configuration for measurement precision as well as continuous or triggered operation. Detailed register information is found in Section 7.6. 7.2 Functional Block Diagram VS Power Reference IN+ IN- Voltage Current Power Energy Charge Temp 20 Bit ADC MUX VBUS Oscillator SCLK SPI MOSI MISO CS + Out-of-range Threshold ALERT ± GND 7.3 Feature Description 7.3.1 Versatile High Voltage Measurement Capability The INA229-Q1 operates off a 2.7 V to 5.5 V supply but can measure voltage and current on rails as high as 85 V. The current is measured by sensing the voltage drop across a external shunt resistor at the IN+ and IN– pins. The input stage of the INA229-Q1 is designed such that the input common-mode voltage can be higher than the device supply voltage, VS. The supported common-mode voltage range at the input pins is –0.3 V to +85 V, which makes the device well suited for both high-side and low-side current measurements. There are no special considerations for power-supply sequencing because the common-mode input range and device supply voltage are independent of each other; therefore, the bus voltage can be present with the supply voltage off, and vice-versa without damaging the device. The device also measures the bus supply voltage through the VBUS pin and temperature through the integrated temperature sensor. The differential shunt voltage is measured between the IN+ and IN– pins, while the bus voltage is measured with respect to device ground. Monitored bus voltages can range from 0 V to 85 V, while monitored temperatures can range from -40 ºC to +125 ºC. Shunt voltage, bus voltage, and temperature measurements are multiplexed internally to a single ADC as shown in Figure 7-1. ADCp ADCn Bus Voltage VBUS Shunt Voltage Internal Temp. IN+ ADC_IN+ To ADC Input IN- ADC_IN- Vs PTAT Temp. Sensor MUX digital Control Figure 7-1. High-Voltage Input Multiplexer 12 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA229-Q1 INA229-Q1 www.ti.com SLYS024A – MAY 2020 – REVISED JUNE 2021 7.3.2 Internal Measurement and Calculation Engine The current and charge are calculated after a shunt voltage measurement, while the power and energy are calculated after a bus voltage measurement. Power and energy are calculated based on the previous current calculation and the latest bus voltage measurement. If the value loaded into the SHUNT_CAL register is zero, the power, energy and charge values will be reported as zero. The current, voltage, and temperature values are immediate results when the number of averages is set to one as shown in Figure 7-2. However, when averaging is used, each ADC measurement is an intermediate result which is stored in the corresponding averaging registers. Following every ADC sample, the newly-calculated values for current, voltage, and temperature are appended to their corresponding averaging registers until the set number of averages is achieved. After all of the samples have been measured the average current and voltage is determined, the power is calculated and the results are loaded to the corresponding output registers where they can then be read. The energy and charge values are accumulated for each conversion cycle. Therefore the INA229-Q1 averaging function is not applied to these. Calculations for power, charge and energy are performed in the background and do not add to the overall conversion time. ADC, Temperature, Current, Voltage T i v i T v T i v Power register p1 p2 p3 Charge register Q1 = i1 x t1 Q.. = i.. x t.. Q.. = i.. x t.. E1 = p1 x t2 Energy register i T E.. = p.. x t.. v i T p4 v T i p5 Q.. = i.. x t.. Q.. = i.. x t.. E.. = p.. x t.. E.. = p.. x t.. E.. = p.. x t.. Figure 7-2. Power, Energy and Charge Calculation Scheme 7.3.3 Low Bias Current The INA229-Q1 features very low input bias current which provides several benefits. The low input bias current of the INA229-Q1 reduces the current consumed by the device in both active and shutdown state. Another benefit of low bias current is that it allows the use of input filters to reject high-frequency noise before the signal is converted to digital data. In traditional digital current-sense amplifiers, the addition of input filters comes at the cost of reduced accuracy. However, as a result of the low bias current, the reduction in accuracy due to input filters is minimized. An additional benefit of low bias current is the ability to use a larger shunt resistor to accurately sense smaller currents. Use of a larger value for the shunt resistor allows the device to accurately monitor currents in the sub-mA range. The bias current in the INA229-Q1 is the smallest when the sensed current is zero. As the current starts to increase, the differential voltage drop across the shunt resistor increases which results in an increase in the bias current as shown in Input Bias Current vs. Differential Input Voltage. 7.3.4 High-Precision Delta-Sigma ADC The integrated ADC is a high-performance, low-offset, low-drift, delta-sigma ADC designed to support bidirectional current flow at the shunt voltage measurement channel. The measured inputs are selected through the high-voltage input multiplexer to the ADC inputs as shown in Figure 7-1. The ADC architecture enables lower drift measurement across temperature and consistent offset measurements across the common-mode voltage, temperature, and power supply variations. A low-offset ADC is preferred in current sensing applications to provide a near 0-V offset voltage that maximizes the useful dynamic range of the system. The INA229-Q1 can measure the shunt voltage, bus voltage, and die temperature, or a combination of any based on the selected MODE bits setting in the ADC_CONFIG register. This permits selecting modes to convert Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA229-Q1 13 INA229-Q1 www.ti.com SLYS024A – MAY 2020 – REVISED JUNE 2021 only the shunt voltage or bus voltage to further allow the user to configure the monitoring function to fit the specific application requirements. When no averaging is selected, once an ADC conversion is completed, the converted values are independently updated in their corresponding registers where they can be read through the digital interface at the time of conversion end. The conversion time for shunt voltage, bus voltage, and temperature inputs are set independently from 50 µs to 4.12ms depending on the values programmed in the ADC_CONFIG register. Enabled measurement inputs are converted sequentially so the total time to convert all inputs depends on the conversion time for each input and the number of inputs enabled. When averaging is used, the intermediate values are subsequently stored in an averaging accumulator, and the conversion sequence repeats until the number of averages is reached. After all of the averaging has been completed, the final values are updated in the corresponding registers that can then be read. These values remain in the data output registers until they are replaced by the next fully completed conversion results. In this case, reading the data output registers does not affect a conversion in progress. The ADC has two conversion modes—continuous and triggered—set by the MODE bits in ADC_CONFIG register. In continuous-conversion mode, the ADC will continuously convert the input measurements and update the output registers as described above in an indefinite loop. In triggered-conversion mode, the ADC will convert the input measurements as described above, after which the ADC will go into shutdown mode until another single-shot trigger is generated by writing to the MODE bits. Writing the MODE bits will interrupt and restart triggered or continuous conversions that are in progress. Although the device can be read at any time, and the data from the last conversion remains available, the Conversion Ready flag (CNVRF bit in DIAG_ALRT register) is provided to help coordinate triggered conversions. This bit is set after all conversions and averaging is completed. The Conversion Ready flag (CNVRF) clears under these conditions: • • Writing to the ADC_CONFIG register (except for selecting shutdown mode); or Reading the DIAG_ALRT Register While the INA229-Q1 device is used in either one of the conversion modes, a dedicated digital engine is calculating the current, power, charge and energy values in the background as described in Section 7.3.2. In triggered mode, the accumulation registers (ENERGY and CHARGE) are invalid, as the device does not keep track of elapsed time. For applications that need critical measurements in regards to accumulation of time for energy and charge measurements, the device must be configured to use continuous conversion mode, as the accumulated results are continuously updated and can provide true system representation of charge and energy consumption in a system. All of the calculations are performed in the background and do not contribute to conversion time. For applications that must synchronize with other components in the system, the INA229-Q1 conversion can be delayed by programming the CONVDLY bits in CONFIG register in the range between 0 (no delay) and 510 ms. The resolution in programming the conversion delay is 2 ms. The conversion delay is set to 0 by default. Conversion delay can assist in measurement synchronization when multiple external devices are used for voltage or current monitoring purposes. In applications where an time aligned voltage and current measurements are needed, two devices can be used with the current measurement delayed such that the external voltage and current measurements will occur at approximately the same time. Keep in mind that even though the internal time base for the ADC is precise, synchronization will be lost over time due to internal and external time base mismatch. 7.3.4.1 Low Latency Digital Filter The device integrates a low-pass digital filter that performs both decimation and filtering on the ADC output data, which helps with noise reduction. The digital filter is automatically adjusted for the different output data rates and always settles within one conversion cycle. The user has the flexibility to choose different output conversion time periods TCT from 50 µs to 4.12 ms. With this configuration the first amplitude notch appears at the Nyquist frequency of the output signal which is determined by the selected conversion time period and defined as fNOTCH= 1 / (2 x TCT). This means that the filter cut-off frequency will scale proportionally with the data output rate as described. ADC Frequency Response shows the filter response when the 1.052 ms conversion time period is selected. 14 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA229-Q1 INA229-Q1 www.ti.com SLYS024A – MAY 2020 – REVISED JUNE 2021 0 −10 Gain (dB) −20 −30 −40 −50 −60 1 10 100 1k Frequency (Hz) 10k 100k G001 Conversion time = 1.052 ms, single conversion only Figure 7-3. ADC Frequency Response 7.3.4.2 Flexible Conversion Times and Averaging ADC conversion times for shunt voltage, bus voltage and temperature can be set independently from 50 μs to 4.12 ms. The flexibility in conversion time allows for robust operation in a variety of noisy environments. The device also allows for programmable averaging times from a single conversion all the way to an average of 1024 conversions. The amount of averaging selected applies uniformly to all active measurement inputs. The ADC_CONFIG register shown in Table 7-6 provides additional details on the supported conversion times and averaging modes. The INA229-Q1 effective resolution of the ADC can be increased by increasing the conversion time and increasing the number of averages. Figure 7-4 and Figure 7-5 shown below illustrate the effect of conversion time and averaging on a constant input signal. Figure 7-4. Noise vs Conversion Time (Averaging = 1) Figure 7-5. Noise vs. Conversion Time (Averaging = 128) Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA229-Q1 15 INA229-Q1 www.ti.com SLYS024A – MAY 2020 – REVISED JUNE 2021 Settings for the conversion time and number of conversions averaged impact the effective measurement resolution. For more detailed information on how averaging reduces noise and increases the effective number of bits (ENOB) see Section 8.1.3. 7.3.5 Shunt Resistor Drift Compensation The INA229-Q1 device has an internal temperature sensor which can measure die temperature from –40 °C to +125 °C. The accuracy of the temperature sensor is ±2 °C across the operational temperature range. The temperature value is stored inside the DIETEMP register and can be read through the digital interface. The device has the capability to utilize the temperature measurement to compensate for shunt resistor temperature variance. This feature can be enabled by setting the TEMPCOMP bit in the CONFIG register, while the SHUNT_TEMPCO is the register that can be programmed to enter the temperature coefficient of the used shunt. The full scale value of the SHUNT_TEMPCO register is 16384 ppm/°C. The temperature compensation is referenced to +25 °C . The shunt is always assumed to have a positive temperature coefficient and the temperature compensation follows Equation 1: RNOM x (DIETEMP - 25) x SHUNT_TEMPCO RADJ = RNOM + 106 (1) where • • • RNOM is the nominal shunt resistance in Ohms at 25 °C. DIETEMP is the temperature value in the DIETEMP register in °C. SHUNT_TEMPCO is the shunt temperature coefficient in ppm/°C. When this feature is enabled and correctly programmed, the CURRENT register data is corrected by constantly monitoring the die temperature and becomes a function of temperature. The effectiveness of the compensation will depend on how well the resistor and the INA229-Q1 are thermally coupled since the die temperature of the INA229-Q1 is used for the compensation. Note Warning: If temperature compensation is enabled under some conditions, the calculated current result may be lower than the actual value. This condition typically occurs when there is a high value of shunt voltage ( >70% of full range), there is a shunt with high temperature-coefficient value ( >2000 ppm/°C), and there is a high temperature ( >100°C). Consider the example of constant current flowing through a high temperature coefficient shunt such that at lower temperatures the shunt voltage is in its upper range. As the temperature increases, the device will correctly report a constant current until the maximum shunt voltage is reached. As temperature continues to increase after the maximum shunt voltage is reached, the device will start reporting lower currents. This is because the effective resistance calculated will continue to increase while the detected shunt voltage will remain constant due to the voltage exceeding the selected ADC range. 7.3.6 Integrated Precision Oscillator The internal timebase of the device is provided by an internal oscillator that is trimmed to less than 0.5% tolerance at room temperature. The precision oscillator is the timing source for ADC conversions, as well as the time-count used for calculation of energy and charge. The digital filter response varies with conversion time; therefore, the precise clock ensures filter response and notch frequency consistency across temperature. On power up, the internal oscillator and ADC take roughly 300 µs to reach 0h, the output registers are updated after the averaging has completed. 0h = 1 1h = 4 2h = 16 3h = 64 4h = 128 5h = 256 6h = 512 7h = 1024 7.6.1.3 Shunt Calibration (SHUNT_CAL) Register (Address = 2h) [reset = 1000h] The SHUNT_CAL register is shown in Table 7-7. Return to the Summary Table. Table 7-7. SHUNT_CAL Register Field Descriptions Bit Field Type Reset Description 15 RESERVED R 0h Reserved. Always reads 0. 14-0 SHUNT_CAL R/W 1000h The register provides the device with a conversion constant value that represents shunt resistance used to calculate current value in Amperes. This also sets the resolution for the CURRENT register. Value calculation under Section 8.1.2. 7.6.1.4 Shunt Temperature Coefficient (SHUNT_TEMPCO) Register (Address = 3h) [reset = 0h] The SHUNT_TEMPCO register is shown in Table 7-8. Return to the Summary Table. Table 7-8. SHUNT_TEMPCO Register Field Descriptions Bit Field Type Reset Description 15-14 RESERVED R 0h Reserved. Always reads 0. 13-0 TEMPCO R/W 0h Temperature coefficient of the shunt for temperature compensation correction. Calculated with respect to +25 °C. The full scale value of the register is 16383 ppm/°C. The 16 bit register provides a resolution of 1ppm/°C/LSB 0h = 0 ppm/°C 3FFFh = 16383 ppm/°C 7.6.1.5 Shunt Voltage Measurement (VSHUNT) Register (Address = 4h) [reset = 0h] The VSHUNT register is shown in Table 7-9. Return to the Summary Table. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA229-Q1 23 INA229-Q1 www.ti.com SLYS024A – MAY 2020 – REVISED JUNE 2021 Table 7-9. VSHUNT Register Field Descriptions Bit Field Type Reset Description 23-4 VSHUNT R 0h Differential voltage measured across the shunt output. Two's complement value. Conversion factor: 312.5 nV/LSB when ADCRANGE = 0 78.125 nV/LSB when ADCRANGE = 1 3-0 RESERVED R 0h Reserved. Always reads 0. 7.6.1.6 Bus Voltage Measurement (VBUS) Register (Address = 5h) [reset = 0h] The VBUS register is shown in Table 7-10. Return to the Summary Table. Table 7-10. VBUS Register Field Descriptions 24 Bit Field Type Reset Description 23-4 VBUS R 0h Bus voltage output. Two's complement value, however always positive. Conversion factor: 195.3125 µV/LSB 3-0 RESERVED R 0h Reserved. Always reads 0. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA229-Q1 INA229-Q1 www.ti.com SLYS024A – MAY 2020 – REVISED JUNE 2021 7.6.1.7 Temperature Measurement (DIETEMP) Register (Address = 6h) [reset = 0h] The DIETEMP register is shown in Table 7-11. Return to the Summary Table. Table 7-11. DIETEMP Register Field Descriptions Bit 15-0 Field Type Reset Description DIETEMP R 0h Internal die temperature measurement. Two's complement value. Conversion factor: 7.8125 m°C/LSB 7.6.1.8 Current Result (CURRENT) Register (Address = 7h) [reset = 0h] The CURRENT register is shown in Table 7-12. Return to the Summary Table. Table 7-12. CURRENT Register Field Descriptions Bit Field Type Reset Description 23-4 CURRENT R 0h Calculated current output in Amperes. Two's complement value. Value description under Section 8.1.2. 3-0 RESERVED R 0h Reserved. Always reads 0. 7.6.1.9 Power Result (POWER) Register (Address = 8h) [reset = 0h] The POWER register is shown in Table 7-13. Return to the Summary Table. Table 7-13. POWER Register Field Descriptions Bit 23-0 Field Type Reset Description POWER R 0h Calculated power output. Output value in watts. Unsigned representation. Positive value. Value description under Section 8.1.2. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA229-Q1 25 INA229-Q1 www.ti.com SLYS024A – MAY 2020 – REVISED JUNE 2021 7.6.1.10 Energy Result (ENERGY) Register (Address = 9h) [reset = 0h] The ENERGY register is shown in Table 7-14. Return to the Summary Table. Table 7-14. ENERGY Register Field Descriptions Bit 39-0 Field Type Reset Description ENERGY R 0h Calculated energy output. Output value is in Joules.Unsigned representation. Positive value. Value description under Section 8.1.2. 7.6.1.11 Charge Result (CHARGE) Register (Address = Ah) [reset = 0h] The CHARGE register is shown in Table 7-15. Return to the Summary Table. Table 7-15. CHARGE Register Field Descriptions Bit 39-0 Field Type Reset Description CHARGE R 0h Calculated charge output. Output value is in Coulombs.Two's complement value. Value description under Section 8.1.2. 7.6.1.12 Diagnostic Flags and Alert (DIAG_ALRT) Register (Address = Bh) [reset = 0001h] The DIAG_ALRT register is shown in Table 7-16. Return to the Summary Table. Table 7-16. DIAG_ALRT Register Field Descriptions 26 Bit Field Type Reset Description 15 ALATCH R/W 0h When the Alert Latch Enable bit is set to Transparent mode, the Alert pin and Flag bit reset to the idle state when the fault has been cleared. When the Alert Latch Enable bit is set to Latch mode, the Alert pin and Alert Flag bit remain active following a fault until the DIAG_ALRT Register has been read. 0h = Transparent 1h = Latched 14 CNVR R/W 0h Setting this bit high configures the Alert pin to be asserted when the Conversion Ready Flag (bit 1) is asserted, indicating that a conversion cycle has completed. 0h = Disable conversion ready flag on ALERT pin 1h = Enables conversion ready flag on ALERT pin 13 SLOWALERT R/W 0h When enabled, ALERT function is asserted on the completed averaged value. This gives the flexibility to delay the ALERT until after the averaged value. 0h = ALERT comparison on non-averaged (ADC) value 1h = ALERT comparison on averaged value 12 APOL R/W 0h Alert Polarity bit sets the Alert pin polarity. 0h = Normal (Active-low, open-drain) 1h = Inverted (active-high, open-drain ) 11 ENERGYOF R 0h This bit indicates the health of the ENERGY register. If the 40 bit ENERGY register has overflowed this bit is set to 1. 0h = Normal 1h = Overflow Clears when the ENERGY register is read. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA229-Q1 INA229-Q1 www.ti.com SLYS024A – MAY 2020 – REVISED JUNE 2021 Table 7-16. DIAG_ALRT Register Field Descriptions (continued) Bit Field Type Reset Description 10 CHARGEOF R 0h This bit indicates the health of the CHARGE register. If the 40 bit CHARGE register has overflowed this bit is set to 1. 0h = Normal 1h = Overflow Clears when the CHARGE register is read. 9 MATHOF R 0h This bit is set to 1 if an arithmetic operation resulted in an overflow error. It indicates that current and power data may be invalid. 0h = Normal 1h = Overflow Must be manually cleared by triggering another conversion or by clearing the accumulators with the RSTACC bit. 8 RESERVED R 0h Reserved. Always read 0. 7 TMPOL R/W 0h This bit is set to 1 if the temperature measurement exceeds the threshold limit in the temperature over-limit register. 0h = Normal 1h = Over Temp Event When ALATCH =1 this bit is cleared by reading this register. 6 SHNTOL R/W 0h This bit is set to 1 if the shunt voltage measurement exceeds the threshold limit in the shunt over-limit register. 0h = Normal 1h = Over Shunt Voltage Event When ALATCH =1 this bit is cleared by reading this register. 5 SHNTUL R/W 0h This bit is set to 1 if the shunt voltage measurement falls below the threshold limit in the shunt under-limit register. 0h = Normal 1h = Under Shunt Voltage Event When ALATCH =1 this bit is cleared by reading this register. 4 BUSOL R/W 0h This bit is set to 1 if the bus voltage measurement exceeds the threshold limit in the bus over-limit register. 0h = Normal 1h = Bus Over-Limit Event When ALATCH =1 this bit is cleared by reading this register. 3 BUSUL R/W 0h This bit is set to 1 if the bus voltage measurement falls below the threshold limit in the bus under-limit register. 0h = Normal 1h = Bus Under-Limit Event When ALATCH =1 this bit is cleared by reading this register. 2 POL R/W 0h This bit is set to 1 if the power measurement exceeds the threshold limit in the power limit register. 0h = Normal 1h = Power Over-Limit Event When ALATCH =1 this bit is cleared by reading this register. 1 CNVRF R/W 0h This bit is set to 1 if the conversion is completed. 0h = Normal 1h = Conversion is complete When ALATCH =1 this bit is cleared by reading this register or starting a new triggered conversion. 0 MEMSTAT R/W 1h This bit is set to 0 if a checksum error is detected in the device trim memory space. 0h = Memory Checksum Error 1h = Normal Operation Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA229-Q1 27 INA229-Q1 www.ti.com SLYS024A – MAY 2020 – REVISED JUNE 2021 7.6.1.13 Shunt Overvoltage Threshold (SOVL) Register (Address = Ch) [reset = 7FFFh] If negative values are entered in this register, then a shunt voltage measurement of 0 V will trip this alarm. When using negative values for the shunt under and overvoltage thresholds be aware that the over voltage threshold must be set to the larger (that is, less negative) of the two values. The SOVL register is shown in Table 7-17. Return to the Summary Table. Table 7-17. SOVL Register Field Descriptions Bit Field Type Reset Description 15-0 SOVL R/W 7FFFh Sets the threshold for comparison of the value to detect Shunt Overvoltage (overcurrent protection). Two's complement value. Conversion Factor: 5 µV/LSB when ADCRANGE = 0 1.25 µV/LSB when ADCRANGE = 1. 7.6.1.14 Shunt Undervoltage Threshold (SUVL) Register (Address = Dh) [reset = 8000h] The SUVL register is shown in Table 7-18. Return to the Summary Table. Table 7-18. SUVL Register Field Descriptions Bit Field Type Reset Description 15-0 SUVL R/W 8000h Sets the threshold for comparison of the value to detect Shunt Undervoltage (undercurrent protection). Two's complement value. Conversion Factor: 5 µV/LSB when ADCRANGE = 0 1.25 µV/LSB when ADCRANGE = 1. 7.6.1.15 Bus Overvoltage Threshold (BOVL) Register (Address = Eh) [reset = 7FFFh] The BOVL register is shown in Table 7-19. Return to the Summary Table. Table 7-19. BOVL Register Field Descriptions Bit Field Type Reset Description 15 Reserved R 0h Reserved. Always reads 0. BOVL R/W 7FFFh Sets the threshold for comparison of the value to detect Bus Overvoltage (overvoltage protection). Unsigned representation, positive value only. Conversion factor: 3.125 mV/LSB. 14-0 7.6.1.16 Bus Undervoltage Threshold (BUVL) Register (Address = Fh) [reset = 0h] The BUVL register is shown in Table 7-20. Return to the Summary Table. Table 7-20. BUVL Register Field Descriptions Bit Field Type Reset Description 15 Reserved R 0h Reserved. Always reads 0. BUVL R/W 0h Sets the threshold for comparison of the value to detect Bus Undervoltage (undervoltage protection). Unsigned representation, positive value only. Conversion factor: 3.125 mV/LSB. 14-0 28 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA229-Q1 INA229-Q1 www.ti.com SLYS024A – MAY 2020 – REVISED JUNE 2021 7.6.1.17 Temperature Over-Limit Threshold (TEMP_LIMIT) Register (Address = 10h) [reset = 7FFFh] The TEMP_LIMIT register is shown in Table 7-21. Return to the Summary Table. Table 7-21. TEMP_LIMIT Register Field Descriptions Bit Field Type Reset Description 15-0 TOL R/W 7FFFh Sets the threshold for comparison of the value to detect over temperature measurements. Two's complement value. The value entered in this field compares directly against the value from the DIETEMP register to determine if an over temperature condition exists. Conversion factor: 7.8125 m°C/LSB. 7.6.1.18 Power Over-Limit Threshold (PWR_LIMIT) Register (Address = 11h) [reset = FFFFh] The PWR_LIMIT register is shown in Table 7-22. Return to the Summary Table. Table 7-22. PWR_LIMIT Register Field Descriptions Bit Field Type Reset Description 15-0 POL R/W FFFFh Sets the threshold for comparison of the value to detect power overlimit measurements. Unsigned representation, positive value only. The value entered in this field compares directly against the value from the POWER register to determine if an over power condition exists. Conversion factor: 256 × Power LSB. 7.6.1.19 Manufacturer ID (MANUFACTURER_ID) Register (Address = 3Eh) [reset = 5449h] The MANUFACTURER_ID register is shown in Table 7-23. Return to the Summary Table. Table 7-23. MANUFACTURER_ID Register Field Descriptions Bit 15-0 Field Type Reset Description MANFID R 5449h Reads back TI in ASCII. 7.6.1.20 Device ID (DEVICE_ID) Register (Address = 3Fh) [reset = 2291h] The DEVICE_ID register is shown in Table 7-24. Return to the Summary Table. Table 7-24. DEVICE_ID Register Field Descriptions Bit Field Type Reset Description 15-4 DIEID R 229h Stores the device identification bits. 3-0 REV_ID R 1h Device revision identification. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA229-Q1 29 INA229-Q1 www.ti.com SLYS024A – MAY 2020 – REVISED JUNE 2021 8 Application and Implementation Note Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes, as well as validating and testing their design implementation to confirm system functionality. 8.1 Application Information 8.1.1 Device Measurement Range and Resolution The INA229-Q1 device supports two input ranges for the shunt voltage measurement. The supported full scale differential input across the IN+ and IN– pins can be either ±163.84 mV or ±40.96 mV depending on the ADCRANGE bit in CONFIG register. The range for the bus voltage measurement is from 0 V to 85 V. The internal die temperature sensor range extends from –256 °C to +256 °C but is limited by the package to –40 °C to 125 °C. Table 8-1 provides a description of full scale voltage on shunt, bus, and temperature measurements, along with their associated step size. Table 8-1. ADC Full Scale Values PARAMETER Shunt voltage FULL SCALE VALUE RESOLUTION ±163.84 mV (ADCRANGE = 0) 312.5 nV/LSB ±40.96 mV (ADCRANGE = 1) 78.125 nV/LSB Bus voltage 0 V to 85 V 195.3125 µV/LSB Temperature –40 °C to +125 °C 7.8125 m°C/LSB The device shunt voltage measurements, bus voltage, and temperature measurements can be read through the VSHUNT, VBUS, and DIETEMP registers, respectively. The digital output in VSHUNT and VBUS registers is 20-bits. The shunt voltage measurement can be positive or negative due to bidirectional currents in the system; therefore the data value in VSHUNT can be positive or negative. The VBUS data value is always positive. The output data can be directly converted into voltage by multiplying the digital value by its respective resolution size. The digital output in the DIETEMP register is 16-bit and can be directly converted to °C by multiplying by the above resolution size. This output value can also be positive or negative. Furthermore, the device provides the flexibility to report calculated current in Amperes, power in Watts, charge in Coulombs and energy in Joules as described in Section 8.1.2. 8.1.2 Current , Power, Energy, and Charge Calculations For the INA229-Q1 device to report current values in Ampere units, a constant conversion value must be written in the SHUNT_CAL register that is dependent on the maximum measured current and the shunt resistance used in the application. The SHUNT_CAL register is calculated based on Equation 2. The term CURRENT_LSB is the LSB step size for the CURRENT register where the current in Amperes is stored. The value of CURRENT_LSB is based on the maximum expected current as shown in Equation 3, and it directly defines the resolution of the CURRENT register. While the smallest CURRENT_LSB value yields highest resolution, it is common to select a higher round-number (no higher than 8x) value for the CURRENT_LSB in order to simplify the conversion of the CURRENT. 30 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA229-Q1 INA229-Q1 www.ti.com SLYS024A – MAY 2020 – REVISED JUNE 2021 The RSHUNT term is the resistance value of the external shunt used to develop the differential voltage across the IN+ and IN– pins. Use Equation 2 for ADCRANGE = 0. For ADCRANGE = 1, the value of SHUNT_CAL must be multiplied by 4. SHUNT_CAL = 13107.2 x 106 x CURRENT_LSB x RSHUNT (2) where • • 13107.2 x 106 is an internal fixed value used to ensure scaling is maintained properly. the value of SHUNT_CAL must be multiplied by 4 for ADCRANGE = 1. CURRENT_LSB = Maximum Expected Current 219 (3) Note that the current is calculated following a shunt voltage measurement based on the value set in the SHUNT_CAL register. If the value loaded into the SHUNT_CAL register is zero, the current value reported through the CURRENT register is also zero. After programming the SHUNT_CAL register with the calculated value, the measured current in Amperes can be read from the CURRENT register. The final value is scaled by CURRENT_LSB and calculated in Equation 4: Current [A] = CURRENT_LSB x CURRENT (4) where • CURRENT is the value read from the CURRENT register The power value can be read from the POWER register as a 24-bit value and converted to Watts by using Equation 5: Power [W] = 3.2 x CURRENT_LSB x POWER (5) where • • POWER is the value read from the POWER register. CURRENT_LSB is the lsb size of the current calculation as defined by Equation 3. The energy value can be read from the ENERGY register as a 40-bit unsigned value in Joules units. The energy value in Joules is converted by using Equation 6: Energy [J] = 16 x 3.2 x CURRENT_LSB x ENERGY (6) Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA229-Q1 31 INA229-Q1 www.ti.com SLYS024A – MAY 2020 – REVISED JUNE 2021 The charge value can be read from the CHARGE register as a 40-bit, two's complement value in Coulombs. The charge value in Coulomb is converted by using Equation 7: Charge [C] = CURRENT_LSB x CHARGE (7) where • • CHARGE is the value read from the CHARGE register. CURRENT_LSB is the lsb size of the current calculation as described in Equation 3. Upon overflow, the ENERGY and CHARGE registers will roll over and start from zero. The register values can also be reset at any time by setting the RSTACC bit in the CONFIG register. For a design example using these equations refer to Section 8.2.2. 8.1.3 ADC Output Data Rate and Noise Performance The INA229-Q1 noise performance and effective resolution depend on the ADC conversion time. The device also supports digital averaging which can further help decrease digital noise. The flexibility of the device to select ADC conversion time and data averaging offers increased signal-to-noise ratio and achieves the highest dynamic range with lowest offset. The profile of the noise at lower signals levels is dominated by the system noise that is comprised mainly of 1/f noise or white noise. The INA229-Q1 effective resolution of the ADC can be increased by increasing the conversion time and increasing the number of averages. Table 8-2 summarizes the output data rate conversion settings supported by the device. The fastest conversion setting is 50 µs. Typical noise-free resolution is represented as Effective Number of Bits (ENOB) based on device measured data. The ENOB is calculated based on noise peak-to-peak values, which assures that full noise distribution is taken into consideration. Table 8-2. INA229-Q1 Noise Performance ADC CONVERSION TIME PERIOD [µs] OUTPUT SAMPLE AVERAGING [SAMPLES] NOISE-FREE ENOB (±163.84-mV) (ADCRANGE = 0) NOISE-FREE ENOB (±40.96-mV) (ADCRANGE = 1) 50 0.05 12.4 10.4 84 0.084 12.6 10.4 150 0.15 13.3 11.4 0.28 13.8 11.8 0.54 14.2 12.4 1052 1.052 14.5 12.6 2074 2.074 15.3 13.3 4120 4.12 16.0 13.8 50 0.2 13.1 11.4 84 0.336 13.9 11.8 150 0.6 14.3 12.2 1.12 14.9 12.8 2.16 15.1 13.0 1052 4.208 15.8 13.8 2074 8.296 16.1 14.3 4120 16.48 16.5 14.4 280 540 280 540 32 OUTPUT SAMPLE PERIOD [ms] 1 4 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA229-Q1 INA229-Q1 www.ti.com SLYS024A – MAY 2020 – REVISED JUNE 2021 Table 8-2. INA229-Q1 Noise Performance (continued) ADC CONVERSION TIME PERIOD [µs] OUTPUT SAMPLE AVERAGING [SAMPLES] OUTPUT SAMPLE PERIOD [ms] NOISE-FREE ENOB (±163.84-mV) (ADCRANGE = 0) NOISE-FREE ENOB (±40.96-mV) (ADCRANGE = 1) 50 0.8 13.9 12.3 84 1.344 14.7 12.9 150 2.4 15.1 13.0 4.48 15.8 13.7 8.64 16.3 14.3 1052 16.832 16.5 14.6 2074 33.184 17.1 15.3 4120 65.92 17.7 15.9 50 3.2 15.0 13.3 84 5.376 15.9 13.8 150 9.6 16.4 14.4 17.92 16.9 14.5 34.56 17.7 15.3 1052 67.328 17.7 15.9 2074 132.736 18.1 16.3 4120 263.68 18.7 16.5 50 6.4 15.5 13.4 84 10.752 16.3 14.3 150 19.2 16.9 14.7 280 35.84 17.1 15.2 280 540 280 540 540 16 64 128 69.12 18.1 15.9 1052 134.656 18.1 16.4 2074 265.472 18.7 16.9 4120 527.36 19.7 17.1 50 12.8 15.5 14.4 84 21.504 16.7 14.7 150 38.4 17.4 15.3 280 71.68 17.7 15.7 540 256 138.24 18.7 16.1 1052 269.312 18.7 16.7 2074 530.944 19.7 17.4 4120 1054.72 19.7 17.7 50 25.6 16.7 14.3 84 43 17.4 15.4 150 76.8 17.7 15.5 280 143.36 18.7 16.3 540 512 276.48 18.7 16.5 1052 538.624 19.7 17.4 2074 1061.888 19.7 17.7 4120 2109.44 19.7 18.7 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA229-Q1 33 INA229-Q1 www.ti.com SLYS024A – MAY 2020 – REVISED JUNE 2021 Table 8-2. INA229-Q1 Noise Performance (continued) ADC CONVERSION TIME PERIOD [µs] OUTPUT SAMPLE AVERAGING [SAMPLES] OUTPUT SAMPLE PERIOD [ms] NOISE-FREE ENOB (±163.84-mV) (ADCRANGE = 0) NOISE-FREE ENOB (±40.96-mV) (ADCRANGE = 1) 50 51.2 17.1 15.0 84 86.016 17.7 15.9 150 153.6 18.1 16.0 286.72 18.7 16.9 552.96 19.7 17.1 1052 1077.248 19.7 17.7 2074 2123.776 19.7 18.1 4120 4218.88 20 18.7 280 540 1024 8.1.4 Input Filtering Considerations As previously discussed, INA229-Q1 offers several options for noise filtering by allowing the user to select the conversion times and number of averages independently in the ADC_CONFIG register. The conversion times can be set independently for the shunt voltage and bus voltage measurements to allow added flexibility in monitoring of the power-supply bus. The internal ADC has good inherent noise rejection; however, the transients that occur at or very close to the sampling rate harmonics can cause problems. Because these signals are at 1 MHz and higher, they can be managed by incorporating filtering at the input of the device. Filtering high frequency signals enables the use of low-value series resistors on the filter with negligible effects on measurement accuracy. For best results, filter using the lowest possible series resistance (typically 100 Ω or less) and a ceramic capacitor. Recommended values for this capacitor are between 0.1 µF and 1 µF. Figure 8-1 shows the device with a filter added at the input. Overload conditions are another consideration for the device inputs. The device inputs are specified to tolerate ±40 V differential across the IN+ and IN– pins. A large differential scenario might be a short to ground on the load side of the shunt. This type of event can result in full power-supply voltage across the shunt (as long the power supply or energy storage capacitors support it). Removing a short to ground can result in inductive kickbacks that could exceed the 40-V differential or 85-V common-mode absolute maximum rating of the device. Inductive kickback voltages are best controlled by Zener-type transient-absorbing devices (commonly called transzorbs) combined with sufficient energy storage capacitance. See the Transient Robustness for Current Shunt Monitors reference design which describes a high-side current shunt monitor used to measure the voltage developed across a current-sensing resistor when current passes through it. In applications that do not have large energy storage, electrolytic capacitors on one or both sides of the shunt, an input overstress condition may result from an excessive dV/dt of the voltage applied to the input. A hard physical short is the most likely cause of this event. This problem occurs because an excessive dV/dt can activate the ESD protection in the device in systems where large currents are available. Testing demonstrates that the addition of 10-Ω resistors in series with each input of the device sufficiently protects the inputs against this dV/dt failure up to the 40-V maximum differential voltage rating of the device. Selecting these resistors in the range noted has minimal effect on accuracy. 34 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA229-Q1 INA229-Q1 www.ti.com SLYS024A – MAY 2020 – REVISED JUNE 2021 Load Supply VS = 2.7V± 5.5V 100 nF VS RFILTER VBUS
INA229AQDGSRQ1 价格&库存

很抱歉,暂时无法提供与“INA229AQDGSRQ1”相匹配的价格&库存,您可以联系我们找货

免费人工找货
INA229AQDGSRQ1
  •  国内价格
  • 1+35.65070
  • 10+31.30974
  • 30+28.65694
  • 100+26.43657

库存:49