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INA250A1, INA250A2, INA250A3, INA250A4
SBOS511B – APRIL 2015 – REVISED DECEMBER 2015
INA250 36-V, Low- or High-Side, Bidirectional, Zero-Drift
Current-Shunt Monitor with Precision Integrated Shunt Resistor
1 Features
3 Description
•
The INA250 is a voltage-output, current-sensing
amplifier family that integrates an internal shunt
resistor
to
enable
high-accuracy
current
measurements at common-mode voltages that can
vary from 0 V to 36 V, independent of the supply
voltage. The device is a bidirectional, low- or highside current-shunt monitor that allows an external
reference to be used to measure current flowing in
both directions through the internal current-sensing
resistor sensor. The integration of the precision
current-sensing
resistor
provides
calibration
equivalent measurement accuracy with ultra-low
temperature drift performance and ensures an
optimized Kelvin layout for the sensing resistor is
always obtained.
1
•
•
•
•
Precision Integrated Shunt Resistor:
– Shunt Resistor: 2 mΩ
– Shunt Resistor Tolerance: 0.1% (Max)
– 15 A Continuous from –40°C to 85°C
– 0°C to 125°C Temperature Coefficient:
10 ppm/°C
High Accuracy:
– Gain Error (Shunt and Amplifier): 0.3% (Max)
– Offset Current: 50 mA (Max, INA250A2)
Four Available Gains:
– INA250A1: 200 mV/A
– INA250A2: 500 mV/A
– INA250A3: 800 mV/A
– INA250A4: 2 V/A
Wide Common-Mode Range: –0.1 V to 36 V
Specified Operating Temperature: –40°C to 125°C
The INA250 family is available in four output voltage
scales: 200 mV/A, 500 mV/A, 800 mV/A, and 2 V/A.
This device is fully tested and specified for
continuous currents up to 10 amps at the maximum
temperature of 125°C. The INA250 operates from a
single 2.7-V to 36-V supply and draws a maximum of
300 µA of supply current. All INA250 gain versions
are specified over the extended operating
temperature range (–40°C to 125°C), and are
available in a TSSOP-16 package.
2 Applications
•
•
•
•
•
•
•
Test Equipment
Power Supplies
Servers
Telecom Equipment
Automotive
Solar Inverters
Power Management
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
INA250A1
INA250A2
INA250A3
TSSOP (16)
5.00 mm × 4.40 mm
INA250A4
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Simplified Schematic
Device Supply
(2.7 V to 36 V)
Power Rail
(0 V to 36 V)
IN+
SH+
CBYPASS
0.1 PF
VIN+
VS
REF
Microcontroller
OUT
+
ADC
ADC
IN
SH
VIN
GND
Load
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
INA250A1, INA250A2, INA250A3, INA250A4
SBOS511B – APRIL 2015 – REVISED DECEMBER 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
4
4
5
7
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description ............................................ 12
7.1 Overview ................................................................. 12
7.2 Functional Block Diagram ....................................... 12
7.3 Feature Description................................................. 12
7.4 Device Functional Modes........................................ 15
8
Applications and Implementation ...................... 19
8.1 Application Information............................................ 19
8.2 Typical Applications ................................................ 19
9 Power Supply Recommendations...................... 23
10 Layout................................................................... 24
10.1 Layout Guidelines ................................................. 24
10.2 Layout Examples................................................... 24
11 Device and Documentation Support ................. 26
11.1
11.2
11.3
11.4
11.5
11.6
Documentation Support .......................................
Related Links ........................................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
26
26
26
26
26
26
12 Mechanical, Packaging, and Orderable
Information ........................................................... 26
4 Revision History
Changes from Revision A (May 2015) to Revision B
Page
•
Released INA250A1, INA250A3, and INA250A4 to production ............................................................................................. 1
•
Added TI Design .................................................................................................................................................................... 1
•
Added parameters for INA250A1, INA250A3, and INA250A4 to Electrical Characteristics table.......................................... 5
•
Added ± to specifications for the Shunt short time overload, Shunt thermal shock, Shunt resistance to solder heat,
Shunt high temperature exposure, and Shunt cold temperature storage parameters of Electrical Characteristics table...... 5
•
Added curves for INA250A1, INA250A3, and INA250A4 to Typical Characteristics section ................................................ 7
•
Added Amplifier Operation section ...................................................................................................................................... 15
•
Added Community Resources section ................................................................................................................................. 26
Changes from Original (April 2015) to Revision A
•
2
Page
INA250A2 released to production........................................................................................................................................... 1
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SBOS511B – APRIL 2015 – REVISED DECEMBER 2015
5 Pin Configuration and Functions
PW Package
16-Pin TSSOP
Top View
IN-
1
16
IN+
IN-
2
15
IN+
IN-
3
14
IN+
SH-
4
13
SH+
VIN-
5
12
VIN+
GND
6
11
GND
REF
7
10
VS
GND
8
9
OUT
Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
GND
6, 8, 11
Analog
IN–
1, 2, 3
Analog input
Ground
Connect to load
IN+
14, 15, 16
Analog input
Connect to supply
OUT
9
REF
7
Analog input
SH–
4
Analog output
Kelvin connection to internal shunt. Connect to VIN– if no filtering is needed.
See Figure 33 for filter recommendations.
SH+
13
Analog output
Kelvin connection to internal shunt. Connect to VIN+ if no filtering is needed.
See Figure 33 for filter recommendations.
VIN–
5
Analog input
Voltage input from load side of shunt resistor.
VIN+
12
Analog input
Voltage input from supply side of shunt resistor.
VS
10
Analog
Analog output Output voltage
Copyright © 2015, Texas Instruments Incorporated
Reference voltage, 0 V to VS (up to 18 V)
Device power supply, 2.7 V to 36 V
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SBOS511B – APRIL 2015 – REVISED DECEMBER 2015
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
UNIT
40
V
Supply voltage (VS)
Analog input current
Continuous current
±15
A
Analog inputs (IN+, IN–)
Common-mode
GND – 0.3
40
V
Common-mode
GND – 0.3
40
–40
40
GND – 0.3
VS + 0.3
V
GND – 0.3
40
V
GND – 0.3
(VS + 0.3) up to 18
V
–55
150
Analog inputs (VIN+, VIN–)
Differential (VIN+) – (VIN–)
Analog inputs (REF)
Analog outputs (SH+, SH–)
Common-mode
Analog outputs (OUT)
Operating, TA
Temperature
Junction, TJ
Storage, Tstg
(1)
V
150
–65
°C
150
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
MIN
NOM
MAX
0
36
UNIT
VCM
Common-mode input voltage
V
VS
Operating supply voltage
2.7
36
V
TA
Operating free-air temperature
–40
125
°C
6.4 Thermal Information
INA250
THERMAL METRIC (1)
PW (TSSOP)
UNIT
16 PINS
RθJA
Junction-to-ambient thermal resistance
104.4
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
42.3
°C/W
RθJB
Junction-to-board thermal resistance
48.5
°C/W
ψJT
Junction-to-top characterization parameter
4.5
°C/W
ψJB
Junction-to-board characterization parameter
48
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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SBOS511B – APRIL 2015 – REVISED DECEMBER 2015
6.5 Electrical Characteristics
At TA = 25°C, VS = 5 V, VIN+ = 12 V, VREF = 2.5 V, ISENSE = IN+ = 0 A, unless otherwise noted.
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
INPUT
VCM
Common-mode input range
CMR
Common-mode rejection
Offset current, RTI (1)
IOS
dIOS/dT
RTI versus temperature
VREF
102
INA250A2, VIN+ = 0 V to 36 V,
TA = –40°C to 125°C
97
110
INA250A3, VIN+ = 0 V to 36 V,
TA = –40°C to 125°C
106
114
INA250A4, VIN+ = 0 V to 36 V,
TA = –40°C to 125°C
108
118
INA250A1, ISENSE = 0 A
±15
±100
INA250A2, ISENSE = 0 A
±12.5
±50
INA250A3, ISENSE = 0 A
±5
±30
INA250A4, ISENSE = 0 A
±5
±20
Reference input range
IB+, IB-, ISENSE = 0 A
(2)
V
dB
VS = 2.7 V to 36 V, TA = –40°C to 125°C
Input bias current
36
94
TA = –40°C to 125°C
PSR
IB
–0.1
INA250A1, VIN+ = 0 V to 36 V,
TA = –40°C to 125°C
mA
25
250
μA/°C
±0.03
±1
mA/V
±28
±35
μA
(VS) up to 18
V
0
SHUNT RESISTOR (3)
RSHUNT
Equivalent resistance when used with
onboard amplifier
Shunt resistance
(SH+ to SH–)
Used as stand-alone resistor (4)
Package resistance
Resistor temperature
coefficient
ISENSE
(1)
(2)
(3)
(4)
(5)
1.998
2
2.002
1.9
2
2.1
IN+ to IN–
4.5
TA = –40°C to 125°C
15
TA = –40°C to 0°C
50
TA = 0°C to 125°C
10
Maximum continuous
current (5)
TA = –40°C to 85°C
Shunt short time overload
ISENSE = 30 A for 5 seconds
±0.05%
Shunt thermal shock
–65°C to 150°C, 500 cycles
±0.1%
Shunt resistance to solder
heat
260°C solder, 10 s
±0.1%
Shunt high temperature
exposure
1000 hours, TA = 150°C
Shunt cold temperature
storage
24 hours, TA = –65°C
mΩ
mΩ
ppm/°C
±15
A
±0.15%
±0.025%
RTI = referred-to-input.
The supply voltage range maximum is 36 V, but the reference voltage cannot be higher than 18 V.
See the Integrated Shunt Resistor section for additional information regarding the integrated current-sensing resistor.
The internal shunt resistor is intended to be used with the internal amplifier and is not intended to be used as a stand-alone resistor. See
the Integrated Shunt Resistor section for more information.
See Figure 30 and the Layout section for additional information on the current derating and layout recommendations to improve the
current handling capability of the device at higher temperatures.
Copyright © 2015, Texas Instruments Incorporated
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Electrical Characteristics (continued)
At TA = 25°C, VS = 5 V, VIN+ = 12 V, VREF = 2.5 V, ISENSE = IN+ = 0 A, unless otherwise noted.
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
OUTPUT
G
Gain
INA250A1
200
INA250A2
500
INA250A3
800
INA250A4
2
ISENSE = –10 A to 10 A, TA = 25°C
±0.05%
ISENSE = –10 A to 10 A,
TA = –40°C to 125°C
System gain error (6)
RO
45
ISENSE = 0.5 A to 10 A
ppm/°C
±0.03%
Output impedance
Maximum capacitive load
V/A
±0.3%
±0.75%
TA = –40°C to 125°C
Nonlinearity error
mV/A
No sustained oscillation
1.5
Ω
1
nF
VOLTAGE OUTPUT (7)
Swing to VS power-supply
rail
RL = 10 kΩ to GND
(VS) – 0.1
(VS) – 0.2
Swing to GND
RL = 10 kΩ to GND
(VGND) + 25
(VGND) + 50
V
mV
FREQUENCY RESPONSE
BW
Bandwidth
SR
Slew rate
INA250A1, CL = 10 pF
50
INA250A2, CL = 10 pF
50
INA250A3, CL = 10 pF
35
INA250A4, CL = 10 pF
11
CL = 10 pF
0.2
INA250A1
51
INA250A2
35
INA250A3
37
INA250A4
27
kHz
V/μs
NOISE, RTI (1)
Voltage noise density
nV/√Hz
POWER SUPPLY
VS
Operating voltage range
IQ
Quiescent current
2.7
TA = –40°C to 125°C
200
36
V
300
μA
125
°C
TEMPERATURE RANGE
Specified range
(6)
(7)
6
–40
System gain error includes amplifier gain error and the integrated sense resistor tolerance. System gain error does not include the stress
related characteristics of the integrated sense resistor. These characteristics are described in the Shunt Resistor section of the Electrical
Characteristics table.
See Typical Characteristics curve, Output Voltage Swing vs Output Current (Figure 19).
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SBOS511B – APRIL 2015 – REVISED DECEMBER 2015
6.6 Typical Characteristics
45
40
35
30
25
20
15
5
10
0
-5
-10
-15
-20
160
140
120
80
100
60
40
0
20
-20
-40
-60
-80
-100
-120
-25
Population
Population
At TA = 25°C, VS = 5 V, VIN+ = 12 V, VREF = 2.5 V, ISENSE = IN+ = 0 A, unless otherwise noted.
Offset Current (mA)
Offset Current (mA)
C001
Figure 2. INA250A2 Input Offset Distribution
Offset Current (mA)
40
35
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
Population
40
35
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
Population
Figure 1. INA250A1 Input Offset Distribution
Offset Current (mA)
Figure 3. INA250A3 Input Offset Distribution
Figure 4. INA250A4 Input Offset Distribution
50
30
20
Population
10
0
-10
-20
Figure 5. Input Offset vs Temperature
Copyright © 2015, Texas Instruments Incorporated
125
150
8
6
4
2
0
-2
-4
16
100
14
25
50
75
Temperature (°C)
12
0
10
-25
-6
-50
-50
-8
-40
-10
INA250A1
INA250A2
INA250A3
INA250A4
-30
-12
Input Offset Current (mA)
40
Common-Mode Rejection Ratio (mA/V)
Figure 6. INA250A1 Common-Mode Rejection Ratio
Distribution
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Typical Characteristics (continued)
5
4
4.5
3
3.5
2
2.5
1
1.5
0
-1
0.5
Common-Mode Rejection Ratio (mA/V)
-0.5
-2
-1.5
5
4
4.5
3
3.5
2
2.5
1
1.5
0
0.5
-1
-0.5
-1.5
-2
Population
Population
At TA = 25°C, VS = 5 V, VIN+ = 12 V, VREF = 2.5 V, ISENSE = IN+ = 0 A, unless otherwise noted.
Common-Mode Rejection Ratio (mA/V)
C003
Figure 7. INA250A2 Common-Mode Rejection Ratio
Distribution
Figure 8. INA250A3 Common-Mode Rejection Ratio
Distribution
4
INA250A1
INA250A2
INA250A3
INA250A4
3.5
Population
CMRR (mA/V)
3
2.5
2
1.5
1
2.5
2
2.25
1.5
1.75
1
1.25
0.5
0.75
0.25
0
-0.5
-0.25
-0.75
-1
0.5
0
-50
-25
0
25
50
75
Temperature (°C)
100
125
150
Common-Mode Rejection Ratio (mA/V)
Figure 9. INA250A4 Common-Mode Rejection Ratio
Distribution
Figure 10. Common-Mode Rejection Ratio vs Temperature
0
Population
PSRR (µA/V)
-20
-40
-60
150
125
100
75
50
25
0
-25
-50
-75
-100
-125
-150
-80
Power Supply Rejection Ratio (µA/V)
C005
Figure 11. Power-Supply Rejection Ratio Distribution
8
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-100
±50
±25
0
25
50
75
Temperature (ƒC)
100
125
150
C006
Figure 12. Power-Supply Rejection Ratio vs Temperature
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SBOS511B – APRIL 2015 – REVISED DECEMBER 2015
Typical Characteristics (continued)
At TA = 25°C, VS = 5 V, VIN+ = 12 V, VREF = 2.5 V, ISENSE = IN+ = 0 A, unless otherwise noted.
0.5
0.4
0.2
0.1
Population
Gain Error (%)
0.3
0
-0.1
-0.2
-0.3
-0.4
C033
0.25
0.2
150
0.15
125
0.1
100
0.05
75
0
50
-0.05
25
Temperature (ƒC)
-0.1
0
-0.15
±25
-0.2
±50
-0.25
-0.5
System Gain Error (%)
C007
System gain error = RSHUNT error + amplifier gain error,
load current = 10 A
Figure 14. System Gain Error Distribution
Figure 13. System Gain Error vs Temperature
80
0.5
0.4
60
0.2
40
0.1
Gain (dB)
Gain Error (%)
0.3
0
-0.1
20
0
-0.2
INA250A1
INA250A2
INA250A3
INA250A4
-0.3
-20
-0.4
-0.5
±50
±25
0
25
50
75
100
125
Temperature (ƒC)
-40
1
150
10
100
C008
1k
10k
Frequency (Hz)
100k
1M
VCM = 12 V, ISENSE = 500 mAPP
Figure 16. Amplifier Gain vs Frequency
Figure 15. Amplifier Gain Error vs Temperature
120
160
140
100
100
CMR (dB)
PSR (dB)
120
80
60
40
80
60
40
20
0
1
20
10
100
1k
10k
Frequency (Hz)
100k
1M
0.1
1
10
100
1k
Frequency (Hz)
10k
C011
C010
VCM = 12 V, VREF = 2.5 V, ISENSE = 0 A,
VS = 5 V + 250-mV sine disturbance
Figure 17. Power-Supply Rejection vs Frequency
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100k
VS = 5 V, VREF = 2.5 V, ISENSE = 0 A, VCM = 1-V sine wave
Figure 18. Common-Mode Rejection vs Frequency
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Typical Characteristics (continued)
At TA = 25°C, VS = 5 V, VIN+ = 12 V, VREF = 2.5 V, ISENSE = IN+ = 0 A, unless otherwise noted.
60
VS
-40°C
50
25°C
Input Bias Current (µA)
Output Voltage Swing (V)
VS - 1
125°C
VS - 2
VS - 3
GND + 3
GND + 2
IB+, IB-, VREF = 0 V
40
30
20
IB+, IB-, VREF = 2.5 V
10
0
GND + 1
GND
0
2
4
6
8
10
12
14
±10
0
16
5
10
15
20
25
30
35
40
Common-Mode Voltage (V)
Current (mA)
C013
ISENSE = 0 A, VS = 5 V
Figure 19. Output Voltage Swing vs Output Current
Figure 20. Input Bias Current vs Common-Mode Voltage
(VS = 5 V)
40
40
35
Input Bias Current (µA)
Input Bias Current (µA)
35
30
IB+
25
20
IB15
10
IB+, IB30
25
20
15
5
0
0
10
5
10
15
20
25
30
35
Common-Mode Voltage (V)
±50
40
±25
0
25
50
75
100
125
150
Temperature (ƒC)
C014
ISENSE = 0 A, VS = 0 V, VREF = 0 V
C015
ISENSE = 0 A, VS = 5 V
Figure 21. Input Bias Current vs Common-Mode Voltage
(VS = 0 V)
Figure 22. Input Bias Current vs Temperature
400
250
350
VS = 5 V
300
VS = 2.7 V
Quiescent Current (µA)
Quiescent Current (µA)
VS = 36 V
250
200
150
225
200
175
100
50
±50
±25
0
25
50
75
100
125
Temperature (ƒC)
VREF = VS / 2
Figure 23. Quiescent Current vs Temperature
10
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150
C016
150
0
5
10
15
20
25
30
35
Supply Voltage (V)
40
C017
VREF = 2.5 V
Figure 24. Quiescent Current vs Supply Voltage
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Typical Characteristics (continued)
At TA = 25°C, VS = 5 V, VIN+ = 12 V, VREF = 2.5 V, ISENSE = IN+ = 0 A, unless otherwise noted.
100
Referred-to-Input
Voltage Noise (200 nV/div)
Input-Referred
Voltage Noise (nV/—Hz)
80
70
60
50
40
30
20
INA250A1
INA250A2
INA250A3
INA250A4
10
1
10
100
1k
Frequency (Hz)
10k
Time (1 s/div)
100k
C019
VS = 5 V, VREF = 2.5 V, ISENSE = 0 A
VS = 5 V, VCM = 0 V, ISENSE = 0 A
Figure 26. 0.1-Hz to 10-Hz Voltage Noise (Referred-to-Input)
2.5 V
Input
(5 V/div)
Output
(0.5 V/div)
INPUT
INA250A1
INA250A2
INA250A3
INA250A4
Input
Output
(0.5 V/div)
Figure 25. Input-Referred Voltage Noise vs Frequency
0V
Time (40 µs/div)
Time (30 Ps/div)
C021
Input = (VIN+) - (VIN-)
Input = VIN+, VREF = 2.5 V
Figure 27. Step Response
Output
(1 V/div)
Figure 28. Common-Mode Transient Response
Supply
(2 V/div)
0V
0V
Time (20 µs/div)
C024
Figure 29. Start-Up Response
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7 Detailed Description
7.1 Overview
The INA250 features a 2-mΩ, precision, current-sensing resistor and a 36-V common-mode, zero-drift topology,
precision, current-sensing amplifier integrated into a single package. High precision measurements are enabled
through the matching of the shunt resistor value and the current-sensing amplifier gain providing a highlyaccurate, system-calibrated solution. Multiple gain versions are available to allow for the optimization of the
desired full-scale output voltage based on the target current range expected in the application.
7.2 Functional Block Diagram
IN+
SH+
VS
VIN+
REF
+
OUT
-
IN-
SH-
VIN-
GND
7.3 Feature Description
7.3.1 Integrated Shunt Resistor
The INA250 features a precise, low-drift, current-sensing resistor to allow for precision measurements over the
entire specified temperature range of –40°C to 125°C. The integrated current-sensing resistor ensures
measurement stability over temperature as well as improving layout and board constraint difficulties common in
high precision measurements.
The onboard current-sensing resistor is designed as a 4-wire (or Kelvin) connected resistor that enables accurate
measurements through a force-sense connection. Connecting the amplifier inputs pins (VIN– and VIN+) to the
sense pins of the shunt resistor (SH– and SH+) eliminates many of the parasitic impedances commonly found in
typical very-low sensing-resistor level measurements. Although the sense connection of the current-sensing
resistor can be accessed via the SH+ and SH– pins, this resistor is not intended to be used as a stand-alone
component. The INA250 is system-calibrated to ensure that the current-sensing resistor and current-sensing
amplifier are both precisely matched to one another. Use of the shunt resistor without the onboard amplifier
results in a current-sensing resistor tolerance of approximately 5%. To achieve the optimized system gain
specification, the onboard sensing resistor must be used with the internal current-sensing amplifier.
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Feature Description (continued)
The INA250 has approximately 4.5 mΩ of package resistance. 2 mΩ of this total package resistance is a
precisely-controlled resistance from the Kelvin-connected current-sensing resistor used by the amplifier. The
power dissipation requirements of the system and package are based on the total 4.5-mΩ package resistance
between the IN+ and IN– pins. The heat dissipated across the package when current flows through the device
ultimately determines the maximum current that can be safely handled by the package. The current consumption
of the silicon is relatively low, leaving the total package resistance carrying the high load current as the primary
contributor to the total power dissipation of the package. The maximum safe-operating current level is set to
ensure that the heat dissipated across the package is limited so that no damage to the resistor or the package
itself occurs or that the internal junction temperature of the silicon does not exceed a 150°C limit.
External factors (such as ambient temperature, external air flow, and PCB layout) can contribute to how
effectively the heat developed as a result of the current flowing through the total package resistance can be
removed from within the device. Under the conditions of no air flow, a maximum ambient temperature of 85°C,
and 1-oz. copper input power planes, the INA250 can accommodate continuous current levels up to 15 A. As
shown in Figure 30, the current handling capability is derated at temperatures above the 85°C level with safe
operation up to 10 A at a 125°C ambient temperature. With air flow and larger 2-oz. copper input power planes,
the INA250 can safely accommodate continuous current levels up to 15 A over the entire –40°C to 125°C
temperature range.
20
Maximum Continuous
Current (A)
17.5
15
12.5
10
7.5
5
±50
±25
0
25
50
75
100
125
Temperature (ƒC)
150
C026
Figure 30. Maximum Current vs Temperature
7.3.2 Short-Circuit Duration
The INA250 features a physical shunt resistance that is able to withstand current levels higher than the
continuous handling limit of 15 A without sustaining damage to the current-sensing resistor or the current-sensing
amplifier if the excursions are very brief. Figure 31 shows the short-circuit duration curve for the INA250.
100
Current (A)
80
60
40
20
0
0.1
1
10
Time (s)
100
C027
Figure 31. Short-Circuit Duration
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Feature Description (continued)
7.3.3 Temperature Stability
System calibration is common for many industrial applications to eliminate initial component and system-level
errors that can be present. A system-level calibration can reduce the initial accuracy requirement for many of the
individual components because the errors associated with these components are effectively eliminated through
the calibration procedure. Performing this calibration can enable precision measurements at the temperature in
which the system is calibrated, but as the system temperature changes as a result of external ambient changes
or due to self heating, measurement errors are reintroduced. Without accurate temperature compensation used
in addition to the initial adjustment, the calibration procedure is not effective in accounting for these temperatureinduced changes. One of the primary benefits of the very low temperature coefficient of the INA250 (including
both the integrated current-sensing resistor and current-sensing amplifier) is ensuring that the device
measurement remains highly accurate, even when the temperature changes throughout the specified
temperature range of the device.
For the integrated current-sensing resistor, the drift performance is shown in Figure 32. Although several
temperature ranges are specified in the Electrical Characteristics table, applications operating in ranges other
than those described can use Figure 32 to determine how much variance in the shunt resistor value can be
expected. As with any resistive element, the tolerance of the component varies when exposed to different
temperature conditions. For the current-sensing resistor integrated in the INA250, the resistor does vary slightly
more when operated in temperatures ranging from –40°C to 0°C than when operated from 0°C to 125°C.
However, even in the –40°C to 0°C temperature range, the drift is still quite low at 25 ppm/°C.
Shunt Resistance (m )
2.005
2
1.995
1.99
±50
±25
0
25
50
75
Temperature (ƒC)
100
125
150
C030
Figure 32. Sensing Resistor vs Temperature
An additional aspect to consider is that when current flows through the current-sensing resistor, power is
dissipated across this component. This dissipated power results in an increase in the internal temperature of the
package, including the integrated sensing resistor. This resistor self-heating effect results in an increase of the
resistor temperature helping to move the component out of the colder, wider drift temperature region.
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7.4 Device Functional Modes
7.4.1 Amplifier Operation
The INA250 current-sense amplifier can be configured to measure both unidirectional and bidirectional currents
through the reference voltage level applied to the reference pin, REF. The reference voltage connected to REF
sets the output level that corresponds with a zero input current condition. For unidirectional operation, tie the
REF pin to ground so that when the current increases, the output signal also increases upwards from this
reference voltage (or ground in this case). For bidirectional currents, an external voltage source can be used as
the reference voltage connected to the REF pin to bias up the output. Set the reference voltage to enable
sufficient range above and below this level based on the expected current range to be measured. Positive
currents result in an output signal that increases from the zero-current output level set by the reference voltage
whereas negative currents result in an output signal that decreases.
For both unidirectional and bidirectional applications, the amplifier transfer function is shown in Equation 1:
VOUT = (ILOAD × GAIN) + VREF
where:
•
•
•
ILOAD is the current being measured passing through the internal shunt resistor,
GAIN is the corresponding gain (mA/V) of the selected device, and
VREF is the voltage applied to the REF pin
(1)
As with any difference amplifier, the INA250 common-mode rejection ratio is affected by any impedance present
at the REF input. This concern is not a problem when the REF pin is connected directly to a reference or power
supply. When using resistive dividers from a power supply or a reference voltage, buffer the REF pin with an op
amp.
7.4.2 Input Filtering
An obvious and straightforward location for filtering is at the device output; however, this location negates the
advantage of the low output impedance of the output stage buffer. The input then represents the best location for
implementing external filtering. Figure 33 shows the typical implementation of the input filter for the device.
CF
RS
VIN-
SH-
¦-3dB =
1
RINT
2ŒRSCF
¦-3dB
Bias
+
RINT
SH+
OUT
REF
VIN+
RS
CF
Figure 33. Input Filter
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Device Functional Modes (continued)
The addition of external series resistance at the input pins to the amplifier, however, creates an additional error in
the measurement. Keep the value of these series resistors to 10 Ω or less, if possible, to reduce the affect to
accuracy. The internal bias network illustrated in Figure 33 present at the input pins creates a mismatch in input
bias currents when a differential voltage is applied between the input pins, as shown in Figure 34.
80
Input Bias Current (µA)
70
IB+
60
50
40
30
20
IB-
10
0
±10
±20
0
20
40
60
80
Differential Input Voltage (mV)
100
C029
Figure 34. Input Bias Current vs Differential Input Voltage
7.4.2.1 Calculating Gain Error Resulting from External Filter Resistance
If additional external series filter resistors are added to the circuit, the mismatch in bias currents results in a
mismatch of voltage drops across the filter resistors. This mismatch creates a differential error voltage that
subtracts from the voltage developed across the Kelvin connection of the shunt resistor, thus reducing the
voltage that reaches the amplifier input terminals. Without the additional series resistance, the mismatch in input
bias currents has little effect on device operation as a result of the low input bias current of the amplifier and the
typically low impedance of the traces between the shunt and amplifier input pins. The amount of error these
external filter resistors add to the measurement can be calculated using Equation 3, where the gain error factor is
calculated using Equation 2.
The amount of variance between the differential voltage present at the device input relative to the voltage
developed at the shunt resistor is based both on the external series resistance value as well as the internal input
resistors, RINT; see Figure 33. The reduction of the shunt voltage reaching the device input pins appears as a
gain error when comparing the output voltage relative to the voltage across the shunt resistor. A factor can be
calculated to determine the amount of gain error that is introduced by the addition of external series resistance.
Equation 2 calculates the expected deviation from the shunt voltage compared to the expected voltage at the
device input pins.
(1250 ´ RINT)
Gain Error Factor =
(1250 ´ RS) + (1250 ´ RINT) + (RS ´ RINT)
where:
•
•
RINT is the internal input resistor and
RS is the external series resistance
(2)
Gain Error (%) = 100 - (100 ´ Gain Error Factor)
(3)
With the adjustment factor equation including the device internal input resistance, this factor varies with each
gain version; see Table 1. Each individual device gain error factor is listed in Table 2.
The gain error that can be expected from the addition of the external series resistors can then be calculated
based on Equation 3.
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Device Functional Modes (continued)
Table 1. Input Resistance
DEVICE
GAIN
RINT
INA250A1
200 mV/A
50 kΩ
INA250A2
500 mV/A
20 kΩ
INA250A3
800 mV/A
12.5 kΩ
INA250A4
2 V/A
5 kΩ
Table 2. Device Gain Error Factor
DEVICE
SIMPLIFIED GAIN ERROR FACTOR
50,000
INA250A1
(41 · RS) + 50,000
20,000
INA250A2
(17 · RS) + 20,000
12,500
INA250A3
(11 · RS) + 12,500
1,000
INA250A4
RS + 1,000
For example, using an INA250A2 and the corresponding gain error equation from Table 2, a series resistance of
10 Ω results in a gain error factor of 0.991. The corresponding gain error is then calculated using Equation 3,
resulting in a gain error of approximately 0.84% because of the external 10-Ω series resistors.
7.4.3 Shutting Down the Device
Although the device does not have a shutdown pin, the low power consumption allows for the device to be
powered from the output of a logic gate or transistor switch that can turn on and turn off the voltage connected to
the device power-supply pin. However, in current-shunt monitoring applications, there is also a concern for how
much current is drained from the shunt circuit in shutdown conditions. Evaluating this current drain involves
considering the device simplified schematic in shutdown mode, as shown in Figure 35.
Shutdown
Control
CBYPASS
0.1 µF
Supply
Voltage
Supply
IN+
VS
REF
+
OUT
-
IN-
GND
Load
Figure 35. Shutting Down the Device
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Note that there is typically an approximate 1-MΩ impedance (from the combination of the feedback and input
resistors) from each device input to the REF pin. The amount of current flowing through these pins depends on
the respective configuration. For example, if the REF pin is grounded, calculating the effect of the 1-MΩ
impedance from the shunt to ground is straightforward. However, if the reference or op amp is powered when the
device is shut down, the calculation is direct. Instead of assuming 1 MΩ to ground, assume 1 MΩ to the
reference voltage. If the reference or op amp is also shut down, some knowledge of the reference or op amp
output impedance under shutdown conditions is required. For instance, if the reference source functions similar
to an open circuit when un-powered, little or no current flows through the 1-MΩ path.
7.4.4 Using the Device with Common-Mode Transients Above 36 V
With a small amount of additional circuitry, the device can be used in circuits subject to transients higher than
36 V (such as in automotive applications). Use only zener diodes or zener-type transient absorbers (sometimes
referred to as transzorbs); any other type of transient absorber has an unacceptable time delay. Start by adding
a pair of resistors, as shown in Figure 36, as a working impedance for the zener. Keeping these resistors as
small as possible is preferable, most often approximately 10 Ω. This value limits the affect on accuracy with the
addition of these external components, as described in the Input Filtering section. Device interconnections
between the shunt resistor and amplifier have a current handling limit of 1 A. Using a 10-Ω resistor limits the
allowable transient range to 10 V above the zener clamp in order to not damage the device. Larger resistor
values can be used in this protection circuit to accommodate a larger transient voltage range, resulting in a larger
affect on gain error. Because this circuit limits only short-term transients, many applications are satisfied with a
10-Ω resistor along with conventional zener diodes of the lowest power rating available.
2.7-V to 36-V
Supply
CBYPASS
0.1 µF
VS
Supply
IN-
SH+
SH-
VIN+
VIN-
Load
RZ
” 10
+
RZ
” 10
IN+
REF
OUT
GND
Figure 36. Device Transient Protection
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8 Applications and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The INA250 measures the voltage developed across the internal current-sensing resistor when current passes
through it. The ability to drive the reference pin to adjust the functionality of the output signal offers multiple
configurations, as discussed in this section.
8.2 Typical Applications
8.2.1 Current Summing
Supply
IN+
2.7-V to 36-V
Supply
CBYPASS
0.1 µF
VS
REF
+
OUT
2.7-V to 36-V
Supply
CBYPASS
0.1 µF
IN-
GND
Load
Supply
IN+
VS
IN+
GND
IN-
REF
2.7-V to 36-V
Supply
CBYPASS
0.1 µF
OUT
+
-
VS
REF
+
-
IN-
Supply
OUT
Load
Summed
Output
GND
Load
Figure 37. Daisy-Chain Configuration
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Typical Applications (continued)
8.2.1.1 Design Requirements
Three daisy-chained devices are illustrated in Figure 37. The reference input of the first INA250 sets the
quiescent level on the output of all the INA250 devices in the string.
8.2.1.2 Detailed Design Procedure
The outputs of multiple INA250 devices are easily summed by connecting the output signal of one INA250 to the
reference input of a second INA250. Summing beyond two devices is possible by repeating this configuration,
connecting the output signal of the next INA250 to the reference pin of a subsequent INA250 in the chain. The
output signal of the final INA250 in this chain includes the current level information for all channels in the chain.
Output Voltage
(1 V/diV)
8.2.1.3 Application Curve
0V
Output
Input Current
(1 A/div)
Input B
0A
0A
Input A
Time (0.5 ms/div)
C034
VS = 5 V, VREF = 2.5 V
Figure 38. Daisy-Chain Configuration Output Response
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Typical Applications (continued)
8.2.2 Parallel Multiple INA250 Devices for Higher Current
2.7-V to 36-V
Supply
CBYPASS
0.1 µF
VS
2.7-V to 36-V
Supply
Supply
IN+
IN+
CBYPASS
0.1 µF
VS
REF
OUT
REF
+
+
-
OUT
From Out of
First Channel
Paralleled
Output
-
To REF of Second
Channel
GND
IN-
IN-
GND
Load
Figure 39. Parallel Summing Configuration
8.2.2.1 Design Requirements
The parallel connection for multiple INA250 devices can be used to reduce the equivalent overall sense
resistance, enabling monitoring of higher current levels than a single device is able to accommodate alone. This
configuration also uses a summing arrangement, as described in the Current Summing section. A parallel
summing configuration is shown in Figure 39.
8.2.2.2 Detailed Design Procedure
With a summing configuration the output of the first channel is fed into the reference input of the second, adding
the distributed measurements back together into a single measured value.
Output Voltage
(5 V/div)
8.2.2.3 Application Curve
Output B
12 V
Input Current
(10 A/div)
Outut A
0A
Input
Time (0.5 ms/div)
C036
VS = 24 V, VREF = 12 V
Figure 40. Parallel Configuration Output Response
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Typical Applications (continued)
8.2.3 Current Differencing
Supply
IN+
2.7-V to 36-V
Supply
CBYPASS
0.1 µF
Supply, Reference
Voltage
VS
+
+
REF
OUT
-
To REF of
Second Channel
IN-
GND
Q1
D1
Mosfet
Drive
Circuits
D2
2.7-V to 36-V
Supply
CBYPASS
0.1 µF
Q2
IN-
VS
+
OUT
REF
IN+
Differenced
Output
From Out of First
Channel
GND
Figure 41. Current Differencing Configuration
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Typical Applications (continued)
8.2.3.1 Design Requirements
Occasionally, the need may arise to confirm that the current into a load is identical to the current coming out of a
load, such as when performing diagnostic testing or fault detection. This procedure requires precision current
differencing. This method is the same as current summing, except that the two amplifiers have the respective
inputs connected opposite of each other. Under normal operating conditions, the final output is very close to the
reference value and proportional to any current difference. Figure 41 is an example of two INA250 devices
connected for current differencing.
8.2.3.2 Detailed Design Procedure
The load current can also be measured directly at the output of the first channel. Although technically this
configuration is current differencing, this connection (see Figure 41) is really intended to allow the upper
(positive) sense channel to report any positive-going excursions in the overall output and the lower (negative)
sense channel to report any negative-going excursions.
Output Voltage
(250 mV/div)
8.2.3.3 Application Curve
2.5 V
Input B
Input Current
(2.5 A/div)
Input A
0A
Time (25 ms/div)
C035
VS = 5 V, VREF = 2.5 V
Figure 42. Current Differencing Configuration Output Response
9 Power Supply Recommendations
The input circuitry of the device can accurately measure signals on common-mode voltages beyond the powersupply voltage, VS. For example, the voltage applied to the VS power-supply pin can be 5 V, whereas the load
power-supply voltage being monitored (the common-mode voltage) can be as high as 36 V. Note also that the
device can withstand the full 0-V to 36-V range at the input pins, regardless of whether the device has power
applied or not. Power-supply bypass capacitors are required for stability and must be placed as closely as
possible to the supply and ground pins of the device. A typical value for this supply bypass capacitor is 0.1 μF.
Applications with noisy or high-impedance power supplies can require additional decoupling capacitors to reject
power-supply noise.
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10 Layout
10.1 Layout Guidelines
•
•
•
•
The INA250 is specified for current handling of up to 10 A over the entire –40°C to 125°C temperature range
using a 1-oz. copper pour for the input power plane as well as no external airflow passing over the device.
The primary current-handling limitation for the INA250 is how much heat is dissipated inside the package.
Efforts to improve heat transfer out of the package and into the surrounding environment improve the ability of
the device to handle currents of up to 15 A over the entire –40°C to 125°C temperature range.
Heat transfer improvements primarily involve larger copper power traces and planes with increased copper
thickness (2 oz.) as well as providing airflow to pass over the device. The INA250EVM features a 2-oz.
copper pour for the planes and is capable of supporting 15 A at temperatures up to 125°C.
Place the power-supply bypass capacitor as close as possible to the supply and ground pins. The
recommended value of this bypass capacitor is 0.1 µF. Additional decoupling capacitance can be added to
compensate for noisy or high-impedance power supplies.
10.2 Layout Examples
Figure 43. Recommended Layout
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Layout Examples (continued)
J101
J102
J201
J202
108-0740-001
108-0740-001
108-0740-001
108-0740-001
C103
TP101
TP102
C203
TP201
DNP
TP104
16
15
14
DNP
12
R101
GND1
VS1
0
T101
REF1
1
2
3
4
TP106
13
7
10
IN+
IN+
IN+
INININ-
VIN+
VIN-
SH+
SH-
GND1
TP105
1
2
3
TP204
C105
DNP
5
R102
4
GND1
OUT
9
VS
GND
GND
GND
6
8
11
DNP
12
R201
GND2
0
TP206
INININ-
VIN+
VIN-
SH+
7
10
SH-
ED555/4DS
GND2
TP205
1
2
3
C205
DNP
5
R202
4
OUT
9
VS
GND
GND
GND
6
8
11
OUT2
TP207
INA250A2PWR
TP208
TP203
C202
TP109
TP209
0.1µF
C101
VS1
0.1µF
C201
VS2
1µF
1µF
GND1
GND2
J301
108-0740-001
C303
TP301
J302
J401
J402
108-0740-001
108-0740-001
TP302
108-0740-001
C403
TP401
DNP
TP304
C304
DNP
12
R301
GND3
VS3
0
T301
1
2
3
4
ED555/4DS
REF3
TP306
13
7
10
IN+
IN+
IN+
INININ-
VIN+
VIN-
SH+
SH-
REF
OUT
VS
GND
GND
GND
REF3
OUT3
TP305
1
2
3
TP308
TP404
C305
DNP
5
R302
4
OUT3
6
8
11
GND3
TP307
DNP
12
R401
INININ-
VIN+
VIN-
SH+
7
REF4
TP406
IN+
IN+
IN+
13
0
T401
ED555/4DS
TP303
C302
C404
GND4
1
2
3
4
U401
16
15
14
VS4
0
9
INA250A3PWR
GND3
TP402
DNP
U301
16
15
14
10
SH-
REF
OUT
VS
GND
GND
GND
REF4
OUT4
TP405
1
2
3
C405
DNP
5
R402
4
0.1µF
C301
GND4
0
9
OUT4
6
8
11
TP407
INA250A4PWR
GND4
TP408
TP403
C402
TP309
VS3
GND2
0
REF
REF2
OUT2
TP103
C102
IN+
IN+
IN+
13
REF2
1
2
3
4
TP107
INA250A1PWR
TP108
16
15
14
T201
OUT1
U201
C204
VS2
0
REF
REF1
OUT1
ED555/4DS
DNP
U101
C104
TP202
TP409
0.1µF
C401
VS4
1µF
1µF
GND3
GND4
Figure 44. Recommended Layout Schematic
Copyright © 2015, Texas Instruments Incorporated
Submit Documentation Feedback
Product Folder Links: INA250A1 INA250A2 INA250A3 INA250A4
25
INA250A1, INA250A2, INA250A3, INA250A4
SBOS511B – APRIL 2015 – REVISED DECEMBER 2015
www.ti.com
11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
• INA250EVM User Guide, SBOU153
11.2 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 3. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
INA250A1
Click here
Click here
Click here
Click here
Click here
INA250A2
Click here
Click here
Click here
Click here
Click here
INA250A3
Click here
Click here
Click here
Click here
Click here
INA250A4
Click here
Click here
Click here
Click here
Click here
11.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
26
Submit Documentation Feedback
Copyright © 2015, Texas Instruments Incorporated
Product Folder Links: INA250A1 INA250A2 INA250A3 INA250A4
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
INA250A1PW
ACTIVE
TSSOP
PW
16
90
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
I250A1
INA250A1PWR
ACTIVE
TSSOP
PW
16
2000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
I250A1
INA250A2PW
ACTIVE
TSSOP
PW
16
90
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
I250A2
INA250A2PWR
ACTIVE
TSSOP
PW
16
2000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
I250A2
INA250A3PW
ACTIVE
TSSOP
PW
16
90
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
I250A3
INA250A3PWR
ACTIVE
TSSOP
PW
16
2000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
I250A3
INA250A4PW
ACTIVE
TSSOP
PW
16
90
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
I250A4
INA250A4PWR
ACTIVE
TSSOP
PW
16
2000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
I250A4
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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