INA290, INA2290, INA4290
SBOS961C – JUNE 2020 – REVISED JUNE 2021
INAx290 2.7-V to 120-V, 1.1-MHz, Ultra-Precise, Current-Sense Amplifier
1 Features
3 Description
•
The INAx290 is an ultra-precise, current-sense
amplifier that can measure voltage drops across shunt
resistors over a wide common-mode range from 2.7
V to 120 V. The ultra-precise current measurement
accuracy is achieved thanks to the combination of an
ultra-low offset voltage of ±12 µV (maximum), a small
gain error of ±0.1% (maximum), and a high DC CMRR
of 160 dB (typical). The INAx290 is not only designed
for DC current measurement, but also for high-speed
applications (such as fast overcurrent protection, for
example) with a high bandwidth of 1.1 MHz (at gain of
20 V/V) and an 85-dB AC CMRR (at 50 kHz).
•
•
•
•
•
•
Wide common-mode voltage:
– Operational voltage: 2.7 V to 120 V
– Survival voltage: −20 V to +122 V
Excellent CMRR:
– 160-dB DC
– 85-dB AC at 50 kHz
Accuracy
– Gain:
• Gain error: ±0.1% (maximum)
• Gain drift: ±5 ppm/°C (maximum)
– Offset:
• Offset voltage: ±12 µV (maximum)
• Offset drift: ±0.2 µV/°C (maximum)
Available gains:
– A1 devices: 20 V/V
– A2 devices: 50 V/V
– A3 devices: 100 V/V
– A4 devices: 200 V/V
– A5 devices: 500 V/V
High bandwidth: 1.1 MHz
Slew rate: 2 V/µs
Quiescent current: 370 µA (per channel)
The INAx290 provides the capability to make ultraprecise current measurements by sensing the voltage
drop across a shunt resistor over a wide commonmode range from 2.7 V to 120 V. The INAx290
devices come in highly space-efficient packages.
The single-channel INA290 device is featured in the
SC-70 package, the dual-channel INA2290 device
is available in the MSOP-8 package, and the quadchannel INA4290 device is available in the 4 mm x 4
mm QFN package.
The INAx290 operates from a single 2.7-V to 20-V
supply with the single channel device only drawing
370-µA supply current per channel (typical). The
devices are available with five gain options: 20 V/V,
50 V/V, 100 V/V, 200 V/V, and 500 V/V. The low offset
of the zero-drift architecture enables current sensing
with low ohmic shunts as specified over the extended
operating temperature range (−40°C to +125°C).
2 Applications
•
•
•
•
•
Active antenna system mMIMO (AAS)
Macro remote radio unit (RRU)
48-V rack server
48-V merchant network & server power supply
Test and measurement
VS
Device Information(1)
INA4290 (quad channel)
VCM
INA2290 (dual channel)
PART NUMBER
INA290 (single channel)
ISENSE
R1
IN+
RSENSE
±
Bias
R1
IN±
Load
Current
Feedback
+
Buffer
RL
PACKAGE
BODY SIZE (NOM)
INA290
SC-70 (5)
2.00 mm × 1.25 mm
INA2290
VSSOP (8)
3.00 mm × 3.00 mm
INA4290
QFN (16)
4.00 mm × 4.00 mm
OUT
SAR
ADC
(1)
For all available packages, see the package option
addendum at the end of the data sheet.
GND
Typical Application
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
INA290, INA2290, INA4290
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SBOS961C – JUNE 2020 – REVISED JUNE 2021
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions ..................................3
6 Specifications.................................................................. 5
6.1 Absolute Maximum Ratings ....................................... 5
6.2 ESD Ratings .............................................................. 5
6.3 Recommended Operating Conditions ........................5
6.4 Thermal Information ...................................................5
6.5 Electrical Characteristics.............................................6
6.6 Typical Characteristics................................................ 7
7 Detailed Description......................................................15
7.1 Overview................................................................... 15
7.2 Functional Block Diagram......................................... 15
7.3 Feature Description...................................................16
7.4 Device Functional Modes..........................................18
8 Application and Implementation.................................. 19
8.1 Application Information............................................. 19
8.2 Typical Application.................................................... 21
9 Power Supply Recommendations................................23
10 Layout...........................................................................23
10.1 Layout Guidelines................................................... 23
10.2 Layout Examples.................................................... 23
11 Device and Documentation Support..........................26
11.1 Documentation Support.......................................... 26
11.2 Receiving Notification of Documentation Updates.. 26
11.3 Support Resources................................................. 26
11.4 Trademarks............................................................. 26
11.5 Electrostatic Discharge Caution.............................. 26
11.6 Glossary.................................................................. 26
12 Mechanical, Packaging, and Orderable
Information.................................................................... 26
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (December 2020) to Revision C (June 2021)
Page
• Added INA4290 device information to the document......................................................................................... 1
Changes from Revision A (September 2020) to Revision B (December 2020)
Page
• Changed the INA2290 device status from Advanced Information to Production Data....................................... 1
• Added Channel Separation vs. Frequency, Multichannel Devices .................................................................... 7
Changes from Revision * (June 2020) to Revision A (August 2020)
Page
• Changed the data sheet status from Production Data to Production Mixed....................................................... 1
• Added INA2290 advanced information to the document.................................................................................... 1
2
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SBOS961C – JUNE 2020 – REVISED JUNE 2021
5 Pin Configuration and Functions
OUT
1
GND
2
VS
3
5
IN±
4
IN+
Not to scale
Figure 5-1. INA290: DCK Package 5-Pin SC-70 Top View
Table 5-1. Pin Functions: INA290 (Single Channel)
PIN
NAME
NO.
TYPE
DESCRIPTION
GND
2
Ground
Ground
IN–
5
Input
Connect to load side of shunt resistor.
IN+
4
Input
Connect to supply side of shunt resistor.
OUT
1
Output
Output voltage
VS
3
Power
Power supply
IN+1
VS
IN-1
OUT1
IN+2
OUT2
IN-2
GND
Figure 5-2. INA2290: DGK Package 8-Pin VSSOP Top View
Table 5-2. Pin Functions: INA2290 (Dual Channel)
PIN
NAME
NO.
TYPE
DESCRIPTION
GND
5
Ground
Ground
IN–1
2
Input
Current-sense amplifier negative input for channel 1. Connect to load side of channel 1
sense resistor.
IN+1
1
Input
Current-sense amplifier positive input for channel 1. Connect to bus-voltage side of
channel 1 sense resistor.
IN–2
4
Input
Current-sense amplifier negative input for channel 2. Connect to load side of channel 2
sense resistor.
IN+2
3
Input
Current-sense amplifier positive input for channel 2. Connect to bus-voltage side of
channel 2 sense resistor.
OUT1
7
Output
Channel 1 output voltage
OUT2
6
Output
Channel 2 output voltage
VS
8
Power
Power supply
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OUT1
VS
VS
OUT3
16
15
14
13
SBOS961C – JUNE 2020 – REVISED JUNE 2021
IN+1
1
12
IN+3
IN–1
2
11
IN–3
10
IN+4
9
IN–4
Thermal
A.
6
7
8
GND
OUT4
Pad
GND
4
5
3
IN–2
OUT2
IN+2
Not to scale
Thermal Pad can be left floating or connected to GND.
Figure 5-3. INA4290: RGV Package 16-Pin QFN Top View
Table 5-3. Pin Functions: INA4290 (Quad Channel)
PIN
DESCRIPTION
NO.
GND
6, 7
Ground
IN–1
2
Input
Current-sense amplifier negative input for channel 1. Connect to load side of channel-1
sense resistor.
IN+1
1
Input
Current-sense amplifier positive input for channel 1. Connect to bus-voltage side of
channel-1 sense resistor.
IN–2
4
Input
Current-sense amplifier negative input for channel 2. Connect to load side of channel-2
sense resistor.
IN+2
3
Input
Current-sense amplifier positive input for channel 2. Connect to bus-voltage side of
channel-2 sense resistor.
IN–3
11
Input
Current-sense amplifier negative input for channel 3. Connect to load side of channel-3
sense resistor.
IN+3
12
Input
Current-sense amplifier positive input for channel 3. Connect to bus-voltage side of
channel-3 sense resistor.
IN–4
9
Input
Current-sense amplifier negative input for channel 4. Connect to load side of channel-4
sense resistor.
IN+4
10
Input
Current-sense amplifier positive input for channel 4. Connect to bus-voltage side of
channel-4 sense resistor.
OUT1
16
Output
Channel 1 output voltage
OUT2
5
Output
Channel 2 output voltage
OUT3
13
Output
Channel 3 output voltage
8
Output
Channel 4 output voltage
14, 15
Power
Power supply
OUT4
VS
4
TYPE
NAME
Ground
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
Vs
VIN+, VIN– (2)
MIN
MAX
Supply voltage
–0.3
22
Analog inputs, differential (VIN+) – (VIN–)
–30
30
Analog inputs, common mode (VIN+ or VIN-)
–20
122
GND – 0.3
Vs + 0.3
V
–55
150
°C
150
°C
150
°C
VOUTx
Analog outputs, output voltage
TA
Operating temperature
TJ
Junction temperature
Tstg
Storage temperature
(1)
(2)
–65
UNIT
V
V
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
VIN+ and VIN– are the voltages at the VIN+ and VIN– pins, respectively.
6.2 ESD Ratings
V(ESD) Electrostatic discharge
(1)
(2)
VALUE
UNIT
±2000
V
±1000
V
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)
Charged device model (CDM), per JEDEC specification JESD22-C101, all
pins(2)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
range(1)
VCM
Common-mode input
VS
48
120
V
VS
Operating supply range
2.7
5
20
V
TA
Ambient temperature
–40
125
°C
(1)
Common-mode voltage can go below VS under certain conditions. See Figure 7-1 for additional information on operating range.
6.4 Thermal Information
THERMAL
METRIC(1)
INA4290
INA2290
INA290
RGV (QFN)
DGK (VSSOP)
DCK (SC-70)
16 PINS
8 PINS
5 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
45.9
169.3
191.6
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
41.6
60.1
144.4
°C/W
RθJB
Junction-to-board thermal resistance
21.0
91.3
69.2
°C/W
ΨJT
Junction-to-top characterization parameter
1.0
8.3
46.2
°C/W
ΨJB
Junction-to-board characterization parameter
21.0
89.7
69.0
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
6.4
N/A
N/A
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5 Electrical Characteristics
at TA = 25 °C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, VCM = VIN– = 48 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
140
160
MAX
UNIT
INPUT
CMRR
Vos
Common-mode rejection ratio
Offset voltage, input referred
VCM = 2.7 V to 120 V, TA = –40°C to +125°C
f = 50 kHz
dB
85
A1 devices, INA290, INA2290
6
±25
A1 devices, INA4290
6
±32
A2 devices
3
±20
A3 devices
3
±15
A4, A5 devices
2
±12
dVos/dT
Offset voltage drift
TA = –40°C to +125°C
PSRR
Power supply rejection ratio,
input referred
VS = 2.7 V to 20 V, TA = –40°C to +125°C
IB
Input bias current
µV
0.2
µV/℃
0.05
±0.5
µV/V
IB+, VSENSE = 0 mV
10
20
30
IB–, VSENSE = 0 mV
10
20
30
µA
OUTPUT
A1 devices
G
Gain
Gain error
Gain error drift
A2 devices
50
A3 devices
100
A4 devices
200
A5 devices
500
A1, A2, A3 devices,
GND + 50 mV ≤ VOUT ≤ VS – 200 mV
0.02
±0.1
A4, A5 devices,
GND + 50 mV ≤ VOUT ≤ VS – 200 mV
0.02
±0.15
TA = –40°C to +125°C
Nonlinearity error
Maximum capacitive load
20
No sustained oscillations, no isolation resistor
V/V
%
1.5
5 ppm/°C
0.01
%
500
pF
VOLTAGE OUTPUT
Swing to VS power supply rail
RLOAD = 10 kΩ, TA = –40°C to +125°C
VS – 0.07
VS – 0.2
V
Swing to ground
RLOAD = 10 kΩ, VSENSE = 0 V, TA = –40°C to
+125°C
0.005
0.025
V
A1 devices, CLOAD = 5 pF, VSENSE = 200 mV
1100
A2 devices, CLOAD = 5 pF, VSENSE = 80 mV
1100
A3 devices, CLOAD = 5 pF, VSENSE = 40 mV
900
A4 devices, CLOAD = 5 pF, VSENSE = 20 mV
850
A5 devices, CLOAD = 5 pF, VSENSE = 8 mV
800
FREQUENCY RESPONSE
BW
Bandwidth
SR
Slew rate
Settling time
2
VOUT = 4 V ± 0.1 V step, output settles to 0.5%
9
VOUT = 4 V ± 0.1 V step, output settles to 1%
5
kHz
V/µs
µs
NOISE
Ven
6
Voltage noise density
50
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at TA = 25 °C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, VCM = VIN– = 48 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
370
500
UNIT
POWER SUPPLY
VS
Supply voltage
TA = –40°C to+125°C
IQ
Quiescent current, INA290
IQ
Quiescent current, INA2290
IQ
Quiescent current, INA4290
2.7
20
TA = –40°C to +125°C
600
680
900
TA = –40°C to +125°C
1200
1250
1600
TA = –40°C to +125°C
1800
V
µA
µA
µA
6.6 Typical Characteristics
Input Offset Voltage (PV)
12
10
8
6
4
2
0
-2
-4
-6
20
17.5
15
12.5
10
7.5
5
2.5
0
-2.5
-5
-7.5
Population
Population
al specifications at TA = 25°C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, and VCM = VIN– = 48 V (unless otherwise noted).
Input Offset Voltage (PV)
Figure 6-1. Input Offset Production Distribution,
A1 Devices
Input Offset Voltage (PV)
Figure 6-3. Input Offset Production Distribution,
A3 Devices
10
8
6
4
2
0
-2
-4
Population
-6
12
10
8
6
4
2
0
-2
-4
-6
-8
Population
Figure 6-2. Input Offset Production Distribution,
A2 Devices
Input Offset Voltage (PV)
Figure 6-4. Input Offset Production Distribution,
A4 Devices
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6.6 Typical Characteristics (continued)
9
7.5
6
4.5
3
1.5
0
-1.5
-3
-4.5
-6
Population
al specifications at TA = 25°C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, and VCM = VIN– = 48 V (unless otherwise noted).
Input Offset Voltage (PV)
Figure 6-6. Input Offset Production Distribution,
A1 Devices (INA4290)
Figure 6-5. Input Offset Production Distribution,
A5 Devices
20
4
0
G
G
G
G
G
-4
-8
-75
-50
-25
0
25
50
75 100
Temperature (qC)
125
=
=
=
=
=
20
50
100
200
500
150
0
G
G
G
G
G
-10
-50
-25
0
25
50
75 100
Temperature (qC)
125
=
=
=
=
=
20
50
100
200
500
150
175
Figure 6-8. Common-Mode Rejection Ratio vs. Temperature
180
60
160
50
140
40
120
Gain (dB)
Common-Mode Rejection Ratio (dB)
10
-20
-75
175
Figure 6-7. Input Offset Voltage vs. Temperature
100
80
30
20
G
G
G
G
G
10
60
0
40
20
10
100
1k
10k
Frequency (Hz)
100k
1M
-10
10
=
=
=
=
=
20
50
100
200
500
100
1k
10k
100k
Frequency (Hz)
1M
10M
VSENSE = 4 V / Gain
SPACE
Figure 6-9. Common-Mode Rejection Ratio vs. Frequency
8
Common-Mode Rejection Ratio (nV/V)
Input Offset Voltage (PV)
8
Figure 6-10. Gain vs. Frequency
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6.6 Typical Characteristics (continued)
al specifications at TA = 25°C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, and VCM = VIN– = 48 V (unless otherwise noted).
0.10
Gain Error (%)
0.05
=
=
=
=
=
20
50
100
200
500
0.00
-0.05
-0.10
-75
-50
-25
0
25
50
75 100
Temperature (qC)
125
150
G
G
G
G
G
60
45
20
50
100
200
500
15
0
-15
-30
-50
-25
0
25
50
75 100
Temperature (qC)
125
150
175
Figure 6-12. Power-Supply Rejection Ratio vs. Temperature
25
140
20
Input Bias Current (PA)
160
120
100
80
60
15
VS
VS
VS
VS
10
=
=
=
=
5V
20V
2.7V
0V
5
0
40
20
10
100
1k
10k
Frequency (Hz)
100k
-5
-20
1M
SPACE
0
20
40
60
80
Common-Mode Voltage (V)
100
120
VSENSE = 0 V
Figure 6-13. Power-Supply Rejection Ratio vs. Frequency
Figure 6-14. Input Bias Current vs. Common-Mode Voltage
25
240
IB+
IBIB+, VS = 0V
IB-, VS = 0V
200
20
160
VS
VS
VS
VS
VS
VS
VS
VS
15
10
5
=
=
=
=
=
=
=
=
2.7 to 20V, VCM = 48V
2.7 to 20V, VCM = 120V
2.7 to 5V, VCM = 2.7V
20V, VCM = 7V
2.7 to 20V, VCM = 0V
0V, VCM = 48V
0V, VCM = 120V
0 to 20V, VCM = -20V
Input Bias Current (PA)
Input Bias Current (PA)
=
=
=
=
=
30
-45
-75
175
Figure 6-11. Gain Error vs. Temperature
Power-Supply Rejection Ratio (dB)
Power-Supply Rejection Ratio (nV/V)
75
G
G
G
G
G
120
80
40
0
-40
-80
0
-120
-5
-75
-160
-50
-25
0
25
50
75 100
Temperature (qC)
125
150
Figure 6-15. Input Bias Current vs. Temperature
175
0
200
400
600
VSENSE (mV)
800
1000
Figure 6-16. Input Bias Current vs. VSENSE,
A1 Devices
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6.6 Typical Characteristics (continued)
al specifications at TA = 25°C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, and VCM = VIN– = 48 V (unless otherwise noted).
140
100
IB+
IBIB+, VS = 0V
IB-, VS = 0V
Input Bias Current (PA)
100
80
IB+, G=200
IB+, G=500
IBIB+, VS = 0V
IB-, VS = 0V
80
Input Bias Current (PA)
120
60
40
20
0
-20
60
40
20
-40
0
-60
-80
-20
0
100
200
VSENSE (mV)
300
400
0
Figure 6-17. Input Bias Current vs. VSENSE,
A2 and A3 Devices
40
60
VSENSE (mV)
80
100
Figure 6-18. Input Bias Current vs. VSENSE,
A4 and A5 Devices
VS
VS
25qC
125qC
-40qC
VS - 2
GND + 2
25qC
125qC
-40qC
VS - 1
VS - 2
Output Voltage (V)
VS - 1
Output Voltage (V)
20
VS - 3
GND + 3
GND + 2
GND + 1
GND + 1
GND
GND
0
5
10
15
20
25
Output Current (mA)
30
35
40
0
VS = 2.7 V
10
15
20
25
Output Current (mA)
30
35
40
VS = 5 V
Figure 6-19. Output Voltage vs. Output Current
Figure 6-20. Output Voltage vs. Output Current
50
VS
25qC
125qC
-40qC
Short Circuit Current (mA)
VS - 1
Output Voltage (V)
5
VS - 2
VS - 3
GND + 3
GND + 2
VS
VS
VS
VS
VS
VS
40
30
=
=
=
=
=
=
5V, Sourcing
5V, Sinking
20V, Sourcing
20V, Sinking
2.7V, Sourcing
2.7V, Sinking
20
10
GND + 1
GND
0
5
10
15
20
25
Output Current (mA)
30
35
VS = 20 V
0
-75
-50
-25
0
25
50
75 100
Temperature (qC)
125
150
175
SPACE
Figure 6-21. Output Voltage vs. Output Current
10
40
Figure 6-22. Short-Circuit Current vs. Temperature
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6.6 Typical Characteristics (continued)
al specifications at TA = 25°C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, and VCM = VIN– = 48 V (unless otherwise noted).
0.00
200
100
50
-0.10
20
10
5
Swing to VS (V)
Output Impedance (:)
1000
500
2
1
0.5
0.2
0.1
0.05
-0.20
-0.30
-0.40
0.02
0.01
10
100
1k
10k
100k
Frequency (Hz)
1M
-0.50
-75
10M
SPACE
-50
-25
0
25
50
75 100
Temperature (qC)
125
150
175
RL = 10 kΩ
Figure 6-23. Output Impedance vs. Frequency
Figure 6-24. Swing to Supply vs. Temperature
0.020
0.015
0.010
0.005
0.000
-75
-50
-25
0
25
50
75 100
Temperature (qC)
125
150
Input-Referred Voltage Noise (nV/—Hz)
100
VS = 5V
VS = 20V
VS = 2.7V
Swing to GND (V)
VS = 5V
VS = 20V
VS = 2.7V
G = 20
G = 500
80
70
60
50
40
30
20
10
10
175
RL = 10 kΩ
100
1k
10k
Frequency (Hz)
100k
1M
SPACE
Figure 6-25. Swing to GND vs. Temperature
Figure 6-26. Input-Referred Noise vs. Frequency
400
Quiescent Current (PA)
Referred-to-Input
Voltage Noise (200 nV/div)
375
350
325
300
275
250
225
VS = 5V
VS = 20V
VS = 2.7V
200
175
0
2.5
Time (1 s/div)
Figure 6-27. Input-Referred Noise
5
7.5
10
12.5
Output Voltage (V)
15
17.5
20
Figure 6-28. Quiescent Current vs. Output Voltage,
INA290
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6.6 Typical Characteristics (continued)
al specifications at TA = 25°C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, and VCM = VIN– = 48 V (unless otherwise noted).
Figure 6-30. Quiescent Current vs. Output Voltage,
INA4290
425
750
400
700
Quiescent Current (PA)
Quiescent Current (PA)
Figure 6-29. Quiescent Current vs. Output Voltage,
INA2290
375
350
325
300
-75
-25
0
25
50
75 100
Temperature (qC)
125
150
600
550
VS = 5V
VS = 20V
VS = 2.7V
-50
650
500
-75
175
Figure 6-31. Quiescent Current vs. Temperature,
INA290
VS = 5V
VS = 20V
VS = 2.7V
-50
-25
0
25
50
75 100
Temperature (°C)
125
150
175
Figure 6-32. Quiescent Current vs. Temperature,
INA2290
425
Quiescent Current (PA)
400
375
350
325
25qC
125qC
-40qC
300
0
Figure 6-33. Quiescent Current vs. Temperature,
INA4290
12
2
4
6
8
10
12
14
Supply Voltage (V)
16
18
20
Figure 6-34. Quiescent Current vs. Supply Voltage,
INA290
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6.6 Typical Characteristics (continued)
al specifications at TA = 25°C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, and VCM = VIN– = 48 V (unless otherwise noted).
800
Quiescent Current (µA)
750
700
650
600
25°C
125°C
-40°C
550
0
2
4
6
8
10
12
14
Supply Voltage (V)
16
18
20
Figure 6-36. Quiescent Current vs. Supply Voltage, INA4290
Figure 6-35. Quiescent Current vs. Supply Voltage,
INA2290
425
VS = 5V
VS = 20V
VS = 2.7V
Quiescent Current (PA)
400
375
350
325
0
20
40
60
80
Common-Mode Voltage (V)
100
120
Figure 6-38. Quiescent Current vs. Common-Mode Voltage,
INA2290
Common-Mode Voltage (20V/div)
Figure 6-37. Quiescent Current vs. Common-Mode Voltage,
INA290
VCM
VOUT
2.7V
2.5V
Output Voltage (2.5V/div)
300
-20
Time (12.5Ps/div)
RL = 10 kΩ
Figure 6-39. Quiescent Current vs. Common-Mode Voltage,
INA4290
VSENSE = 5 mV
Figure 6-40. Common-Mode Voltage Fast Transient Pulse,
A5 Devices
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6.6 Typical Characteristics (continued)
al specifications at TA = 25°C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, and VCM = VIN– = 48 V (unless otherwise noted).
Voltage (1 V/div)
Output Voltage
500 mV/div
Supply Voltage
Output Voltage
Input Voltage
5 mV/div
0V
0V
0V
Time (5 Ps/div)
Time (10 Ps/div)
VSENSE = 0 mV
SPACE
Figure 6-42. Start-Up Response
Figure 6-41. Step Response,
A3 Devices
Voltage (1 V/div)
Channel Separation (dB)
160
0V
Supply Voltage
Output Voltage
140
120
100
80
60
10
100
Time (25 Ps/div)
100k
1M
Any channel to any other channel
VSENSE = 5 mV
Figure 6-43. Supply Transient Response,
A5 Devices
14
1k
10k
Frequency (Hz)
Figure 6-44. Channel Separation vs. Frequency, Multichannel
Devices
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7 Detailed Description
7.1 Overview
The INAx290 is a high-side only current-sense amplifier that offers a wide common-mode range, precision
zero-drift topology, excellent common-mode rejection ratio (CMRR), high bandwidth, and fast slew rate. Different
gain versions are available to optimize the output dynamic range based on the application. The INAx290 is
designed using a transconductance architecture with a current-feedback amplifier that enables low bias currents
of 20 µA and a common-mode voltage of 120 V.
7.2 Functional Block Diagram
VS
INA4290 (quad channel)
VCM
INA2290 (dual channel)
INA290 (single channel)
ISENSE
R1
IN+
RSENSE
±
Bias
R1
IN±
Load
Current
Feedback
+
Buffer
OUT
SAR
ADC
RL
GND
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7.3 Feature Description
7.3.1 Amplifier Input Common-Mode Range
Minimum Common-Mode Input Voltage (V)
The INAx290 supports large input common-mode voltages from 2.7 V to 120 V and features a high DC CMRR
of 160 dB (typical) and a 85-dB AC CMRR at 50 kHz. The minimum common-mode voltage as shown in Figure
7-1 is restricted by the supply voltage. The topology of the internal amplifiers INAx290 restricts operation to
high-side, current-sensing applications.
8
7
6
5
4
3
2
VCM = 2.7V
1
0
0
2.5
5
7.5
10
12.5
Supply Voltage (V)
15
17.5
20
Figure 7-1. Minimum Common-Mode Voltage vs Supply
7.3.2 Input-Signal Bandwidth
Gain vs. Frequency shows the INAx290 –3-dB bandwidth is gain-dependent with gain options of 20 V/V, 50 V/V,
100 V/V, 200 V/V, and 500 V/V. The unique multistage design enables the amplifier to achieve high bandwidth
at all gains. This high bandwidth provides the throughput and fast response required for rapid detection and
processing of overcurrent events.
The device bandwidth also depends on the applied VSENSE voltage. Figure 7-2 shows the bandwidth
performance profile of the device over frequency as output voltage increases for each gain variation. As shown
in Figure 7-2, the device exhibits the highest bandwidth with higher VSENSE voltages, and the bandwidth is
higher with lower device gain options. Individual requirements determine the acceptable limits of error for
high-frequency, current-sensing applications. Testing and evaluation in the end application or circuit is required
to determine the acceptance criteria and validate whether or not the performance levels meet the system
specifications.
1200
1100
Bandwidth (kHz)
1000
900
800
700
600
500
G
G
G
G
G
400
300
=
=
=
=
=
20
50
100
200
500
200
0
0.5
1
1.5
2
2.5
Output Voltage (V)
3
3.5
4
Figure 7-2. Bandwidth vs Output Voltage
16
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7.3.3 Low Input Bias Current
The INAx290 input bias current draws 20 μA (typical) even with common-mode voltages as high as 120 V. This
current enables precision current sensing in applications where the sensed current is small or in applications that
require lower input leakage current.
7.3.4 Low VSENSE Operation
The INAx290 enables accurate current measurement across the entire valid VSENSE range. The zero-drift input
architecture of the INAx290 provides the low offset voltage and low offset drift required to measure low VSENSE
levels accurately across the wide operating temperature of –40°C to +125°C. The capability to measure low
sense voltages enables accurate measurements at lower load currents, and also allows reduction of the sense
resistor value for a given operating current, which minimizes the power loss in the current-sensing element.
For multichannel devices, the offset voltage and offset drift characteristics can vary from channel to channel;
however, all channels meet the maximum values specified in Electrical Characteristics.
7.3.5 Wide Fixed-Gain Output
The INAx290 gain error is < 0.1% at room temperature for most gain options, with a maximum drift of 5 ppm/°C
over the full temperature range of –40°C to +125°C. The INAx290 is available in multiple gain options of 20 V/V,
50 V/V, 100 V/V, 200 V/V, and 500 V/V, which is selected based on the desired signal-to-noise ratio and other
system requirements of the design.
The INAx290 closed-loop gain is set by a precision, low-drift internal resistor network. The ratio of these resistors
are excellently matched, although the absolute values can vary significantly. TI does not recommend adding
additional resistance around the INAx290 to change the effective gain because of this variation. Table 7-1
describes the typical values of the internal gain resistors seen in the functional diagram above.
Table 7-1. Fixed Gain Resistor
GAIN
R1
RL
20 (V/V)
25 kΩ
500 kΩ
50 (V/V)
10 kΩ
500 kΩ
100 (V/V)
10 kΩ
1000 kΩ
200 (V/V)
5 kΩ
1000 kΩ
500 (V/V)
2 kΩ
1000 kΩ
7.3.6 Wide Supply Range
The INAx290 operates with a wide supply range from a 2.7 V to 20 V. The output stage supports a fullscale output voltage range of up to VS. A wide output range can enable very-wide dynamic range current
measurements. For a gain of 20 V/V, the maximum acceptable differential input is 1 V.
The INAx290A1 gain offset is ±25 µV and this device is capable of measuring a wide dynamic range of current
up to 92 dB.
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7.4 Device Functional Modes
7.4.1 Unidirectional Operation
The INAx290 measures the differential voltage developed by current flowing through a resistor that is commonly
referred to as a current-sensing resistor or a current-shunt resistor. Figure 7-3 shows that the INAx290 operates
in unidirectional mode only, meaning the device only senses current sourced from a power supply to a system
load.
5V
48-V
Supply
ISENSE
R1
IN+
RSENSE
+
Bias
R1
Current
Feedback
±
IN±
Buffer
OUT
RL
Load
GND
Figure 7-3. Unidirectional Application (Single-Channel Device)
The linear range of the output stage is limited to how close the output voltage can approach ground under
zero-input conditions. The zero current output voltage of the INAx290 is very small, with a maximum of GND +
25 mV. Apply a sense voltage of (25 mV / Gain) or greater to keep the INAx290 output in the linear region of
operation.
7.4.2 High Signal Throughput
With a bandwidth of 1.1 MHz at a gain of 20 V/V and a slew rate of 2 V/µs, the INAx290 is specifically designed
for detecting and protecting applications from fast inrush currents. As shown in Table 7-2, the INAx290 responds
in less than 2 µs for a system measuring a 75-A threshold on a 2-mΩ shunt.
Table 7-2. Response Time
PARAMETER
EQUATION
INAx290
AT VS = 5 V
G
Gain
20 V/V
IMAX
Maximum current
100 A
IThreshold
Threshold current
75 A
RSENSE
Current sense resistor value
2 mΩ
VOUT_MAX
Output voltage at maximum current
VOUT = IMAX × RSENSE × G
4V
VOUT_THR
Output voltage at threshold current
VOUT_THR = ITHR × RSENSE × G
3V
SR
Slew rate
Output response time
18
2 V/µs
Tresponse = VOUT_THR / SR
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8 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
8.1 Application Information
The INAx290 amplifies the voltage developed across a current-sensing resistor as current flows through the
resistor to the load. The wide input common-mode voltage range and high common-mode rejection of the
INAx290 allows use over a wide range of voltage rails while still maintaining an accurate current measurement.
8.1.1 RSENSE and Device Gain Selection
The accuracy of any current-sense amplifier is maximized by choosing the current-sense resistor to be as large
as possible. A large sense resistor maximizes the differential input signal for a given amount of current flow
and reduces the error contribution of the offset voltage. However, there are practical limits as to how large the
current-sense resistor can be in a given application because of the resistor size and maximum allowable power
dissipation. Equation 1 gives the maximum value for the current-sense resistor for a given power dissipation
budget:
RSENSE
PDMAX
IMAX2
(1)
where:
•
•
PDMAX is the maximum allowable power dissipation in RSENSE.
IMAX is the maximum current that flows through RSENSE.
An additional limitation on the size of the current-sense resistor and device gain results from the power-supply
voltage, VS, and device swing-to-rail limitations. To ensure that the current-sense signal is properly passed to the
output, both positive and negative output swing limitations must be examined. Equation 2 provides the maximum
values of RSENSE and GAIN to keep the device from exceeding the positive swing limitation.
IMAX ª RSENSE ª *$,1 < VSP
(2)
where:
•
•
•
IMAX is the maximum current that flows through RSENSE.
GAIN is the gain of the current-sense amplifier.
VSP is the positive output swing as specified in this data sheet.
To avoid positive output swing limitations when selecting the value of RSENSE, there is always a trade-off
between the value of the sense resistor and the gain of the device under consideration. If the sense resistor
selected for the maximum power dissipation is too large, then selecting a lower gain device is possible to avoid
positive swing limitations.
The negative swing limitation places a limit on how small the sense resistor value can be for a given application.
Equation 3 provides the limit on the minimum value of the sense resistor.
IMIN ª RSENSE ª *$,1 > VSN
(3)
where:
•
•
IMIN is the minimum current that flows through RSENSE.
GAIN is the gain of the current-sense amplifier.
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•
VSN is the negative output swing of the device.
Table 8-1 shows an example of the different results obtained from using five different gain versions of the
INAx290. From the table data, the highest gain device allows a smaller current-shunt resistor and decreased
power dissipation in the element.
Table 8-1. RSENSE Selection and Power Dissipation
PARAMETER(1)
G
Gain
VSENSE
Ideal differential input voltage (Ignores
swing limitation and power-supply
variation.)
RSENSE
Current-sense resistor value
PSENSE
Current-sense resistor power dissipation
(1)
RESULTS AT VS = 5 V
EQUATION
INAx290A1
INAx290A2
INAx290A3
INAx290A4
INAx290A5
20 V/V
50 V/V
100 V/V
200 V/V
500 V/V
VSENSE = VOUT / G
250 mV
100 mV
50 mV
25 mV
10 mV
RSENSE = VSENSE / IMAX
25 mΩ
10 mΩ
5 mΩ
2.5 mΩ
1 mΩ
RSENSE x IMAX2
2.5 W
1W
0.5W
0.25 W
0.1 W
Design example with 10-A, full-scale current with maximum output voltage set to 5 V.
8.1.2 Input Filtering
Note
Input filters are not required for accurate measurements using the INAx290, and use of filters in this
location is not recommended. If filter components are used on the input of the amplifier, follow the
guidelines in this section to minimize the effects on performance.
Based strictly on user design requirements, external filtering of the current signal may be desired. The initial
location that can be considered for the filter is at the output of the current-sense amplifier. Although placing the
filter at the output satisfies the filtering requirements, this location changes the low output impedance measured
by any circuitry connected to the output voltage pin. The other location for filter placement is at the current-sense
amplifier input pins. This location also satisfies the filtering requirement, but the components must be carefully
selected to minimally impact device performance. Figure 8-1 shows a filter placed at the input pins.
VS
VCM
f3dB =
1
4ŒRINCIN
ISENSE
RIN
R1
IN+
+
CIN
RSENSE
Bias
RIN
R1
IN±
Load
Current
Feedback
OUT
-
Buffer
RL
GND
Figure 8-1. Filter at Input Pins (Single Channel Shown for Simplicity)
External series resistance provides a source of additional measurement error, so keep the value of these
series resistors to 10 Ω or less to reduce loss of accuracy. The internal bias network shown in Figure 8-1
creates a mismatch in input bias currents (see Figure 6-16, Figure 6-17, and Figure 6-18) when a differential
voltage is applied between the input pins. If additional external series filter resistors are added to the circuit, a
mismatch is created in the voltage drop across the filter resistors. This voltage is a differential error voltage in the
shunt resistor voltage. In addition to the absolute resistor value, mismatch resulting from resistor tolerance can
significantly impact the error because this value is calculated based on the actual measured resistance.
20
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Use Equation 4 to calculate the measurement error expected from the additional external filter resistors, and use
Equation 5 to calculate the gain error factor.
Gain Error (%) = 100 x (Gain Error Factor í 1)
Gain Error Factor =
(4)
RB × R1
(RB × R1) + (RB × RIN) + (2 × RIN × R1)
(5)
Where:
• RIN is the external filter resistance value.
• R1 is the INAx290 input resistance value specified in Table 7-1.
• RB in the internal bias resistance, which is 6600 Ω ± 20%.
The gain error factor, shown in Equation 4, can be calculated to determine the gain error introduced by the
additional external series resistance. Equation 4 calculates the deviation of the shunt voltage, resulting from
the attenuation and imbalance created by the added external filter resistance. Table 8-2 provides the gain error
factor and gain error for several resistor values.
Table 8-2. Example Gain Error Factor and Gain Error for 10-Ω External Filter Input Resistors
DEVICE (GAIN)
GAIN ERROR FACTOR
GAIN ERROR (%)
A1 devices (20)
0.99658
–0.34185
A2 devices (50)
0.99598
–0.40141
A3 devices (100)
0.99598
–0.40141
A4 devices (200)
0.99499
–0.50051
A5 devices (500)
0.99203
–0.79663
8.2 Typical Application
The INAx290 is a unidirectional, current-sense amplifier capable of measuring currents through a resistive shunt
with shunt common-mode voltages from 2.7 V to 120 V. Figure 8-2 shows the circuit configuration for monitoring
current in a high-side radio frequency (RF) power amplifier (PA) application.
54 V
+
ADC
INAx290
±
RF
Out
GND
Microprocessor
RF
DAC
GND
Figure 8-2. Current Sensing in a PA Application (Single-Channel Device)
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8.2.1 Design Requirements
VSUPPLY is set to 5 V and the common-mode voltage set to 54 V. Table 8-3 lists the design setup for this
application.
Table 8-3. Design Parameters
DESIGN PARAMETERS
EXAMPLE VALUE
INAx290 supply voltage
5V
High-side supply voltage
5V
Maximum sense current (IMAX)
5A
Gain option
50 V/V
8.2.2 Detailed Design Procedure
The maximum value of the current-sense resistor is calculated based on the choice of gain, value of the
maximum current to be sensed (IMAX), and the power-supply voltage (VS). When operating at the maximum
current, the output voltage must not exceed the positive output swing specification, VSP. Under the given design
parameters, Equation 6 calculates the maximum value for RSENSE as 19.2 mΩ.
RSENSE <
VSP
IMAX u GAIN
(6)
Although 15 mΩ is less than the maximum value calculated, 15 mΩ is selected for this design example because
this value is still large enough to provide an adequate signal at the current-sense amplifier output.
8.2.2.1 Overload Recovery With Negative VSENSE
The INAx290 is a unidirectional current-sense amplifier that is meant to operate with a positive differential input
voltage (VSENSE). If negative VSENSE is applied, the device is placed in an overload condition and requires time
to recover when VSENSE returns positive. The required overload recovery time increases with more negative
VSENSE.
8.2.3 Application Curve
Figure 8-3 shows the output response of the device to a high-frequency sinusoidal current.
VSENSE (20 mV/div)
INA290A2 VOUT (1 V/div)
Time (10Ps/div)
Figure 8-3. INAx290 Output Response
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9 Power Supply Recommendations
The input circuitry of the INAx290 can accurately measure beyond the power-supply voltage. The power supply
can be 20 V, whereas the load power-supply voltage at IN+ and IN– can go up to 120 V. The output voltage
range of the OUT pin is limited by the voltage on the VS pin and the device swing to the supply specification.
10 Layout
10.1 Layout Guidelines
TI always recommends to follow good layout practices:
• Connect the input pins to the sensing resistor using a Kelvin or 4-wire connection. This connection technique
makes sure that only the current-sensing resistor impedance is detected between the input pins. Poor routing
of the current-sensing resistor commonly results in additional resistance present between the input pins.
Given the very low ohmic value of the current resistor, any additional high-current carrying impedance can
cause significant measurement errors.
• Place the power-supply bypass capacitor as close to the device power supply and ground pins as possible.
The recommended value of this bypass capacitor is 0.1 µF. Additional decoupling capacitance can be added
to compensate for noisy or high-impedance power supplies.
• When routing the connections from the current-sense resistor to the device, keep the trace lengths as short
as possible.
10.2 Layout Examples
Load
RSENSE
TI Device
Current Sense
Output
OUT 1
5 IN±
Direction of
Current Flow
GND 2
Power Supply, VS
(2.7 V to 20 V)
VS 3
4 IN+
CBYPASS
VIA to Ground
Plane
Bus Voltage
Figure 10-1. Recommended Layout for the INA290
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Direction of
Current Flow
RSHUNT1
Load 1
Bus Voltage1
CBYPASS
Power Supply, VS:
2.7 V to 20 V
IN+1 5
4 VS
IN±1 6
3 OUT1
Current Sense Output 1
IN+2 7
2 OUT2
Current Sense Output 2
IN-2 8
1 GND
VIA to Ground
Plane
Load 2
Bus Voltage2
RSHUNT2
Direction of
Current Flow
Figure 10-2. Recommended Layout for the INA2290
24
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Copyright © 2021 Texas Instruments Incorporated
Product Folder Links: INA290 INA2290 INA4290
INA290, INA2290, INA4290
www.ti.com
SBOS961C – JUNE 2020 – REVISED JUNE 2021
Bus Voltage1
Bus Voltage3
Direction
of Current
Flow
Direction
of Current
Flow
RSHUNT1
RSHUNT3
Load 1
Load 3
OUT3
Power Supply, VS:
2.7 V to 20 V
Current
Sense
Output 3
VS
VS
CBYPASS
OUT1
Current
Sense
Output 1
VIA to
Ground
Plane
IN+1
IN+3
IN–1
IN–3
IN+2
IN+4
IN–2
IN–4
OUT4
GND
GND
OUT2
VIA to
Ground
Plane
Current
Current
Sense
Sense
Output 2
Output 4
Bus Voltage2
Bus Voltage4
RSHUNT2
RSHUNT4
Direction
of Current
Flow
Direction
of Current
Flow
LOAD2
LOAD4
Figure 10-3. Recommended Layout for the INA4290
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Copyright © 2021 Texas Instruments Incorporated
Product Folder Links: INA290 INA2290 INA4290
25
INA290, INA2290, INA4290
www.ti.com
SBOS961C – JUNE 2020 – REVISED JUNE 2021
11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation, see the following:
• Texas Instruments, INA290EVM User's Guide (SBOU230)
• Texas Instruments, INA2290EVM User's Guide (SBOU243)
• Texas Instruments, INA4290EVM User's Guide (SBOU258)
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
11.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
11.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
11.6 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
26
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Copyright © 2021 Texas Instruments Incorporated
Product Folder Links: INA290 INA2290 INA4290
PACKAGE OPTION ADDENDUM
www.ti.com
11-Jul-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
INA2290A1IDGKR
ACTIVE
VSSOP
DGK
8
2500
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2FAQ
INA2290A1IDGKT
ACTIVE
VSSOP
DGK
8
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2FAQ
INA2290A2IDGKR
ACTIVE
VSSOP
DGK
8
2500
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2FBQ
INA2290A2IDGKT
ACTIVE
VSSOP
DGK
8
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2FBQ
INA2290A3IDGKR
ACTIVE
VSSOP
DGK
8
2500
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2FCQ
INA2290A3IDGKT
ACTIVE
VSSOP
DGK
8
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2FCQ
INA2290A4IDGKR
ACTIVE
VSSOP
DGK
8
2500
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2FDQ
INA2290A4IDGKT
ACTIVE
VSSOP
DGK
8
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2FDQ
INA2290A5IDGKR
ACTIVE
VSSOP
DGK
8
2500
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2FEQ
INA2290A5IDGKT
ACTIVE
VSSOP
DGK
8
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2FEQ
INA290A1IDCKR
ACTIVE
SC70
DCK
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1FQ
INA290A1IDCKT
ACTIVE
SC70
DCK
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1FQ
INA290A2IDCKR
ACTIVE
SC70
DCK
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1FR
INA290A2IDCKT
ACTIVE
SC70
DCK
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1FR
INA290A3IDCKR
ACTIVE
SC70
DCK
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1FS
INA290A3IDCKT
ACTIVE
SC70
DCK
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1FS
INA290A4IDCKR
ACTIVE
SC70
DCK
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1FT
INA290A4IDCKT
ACTIVE
SC70
DCK
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1FT
INA290A5IDCKR
ACTIVE
SC70
DCK
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1FU
INA290A5IDCKT
ACTIVE
SC70
DCK
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1FU
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
11-Jul-2021
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
INA4290A1IRGVR
ACTIVE
VQFN
RGV
16
2500
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
INA
4290A1
INA4290A1IRGVT
ACTIVE
VQFN
RGV
16
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
INA
4290A1
INA4290A2IRGVR
ACTIVE
VQFN
RGV
16
2500
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
INA
4290A2
INA4290A2IRGVT
ACTIVE
VQFN
RGV
16
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
INA
4290A2
INA4290A3IRGVR
ACTIVE
VQFN
RGV
16
2500
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
INA
4290A3
INA4290A3IRGVT
ACTIVE
VQFN
RGV
16
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
INA
4290A3
INA4290A4IRGVR
ACTIVE
VQFN
RGV
16
2500
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
INA
4290A4
INA4290A4IRGVT
ACTIVE
VQFN
RGV
16
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
INA
4290A4
INA4290A5IRGVR
ACTIVE
VQFN
RGV
16
2500
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
INA
4290A5
INA4290A5IRGVT
ACTIVE
VQFN
RGV
16
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
INA
4290A5
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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