INA290-Q1
INA290-Q1
SBOS995A – OCTOBER 2019 – REVISED NOVEMBER
2020
SBOS995A – OCTOBER 2019 – REVISED NOVEMBER 2020
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INA290-Q1 AEC-Q100, 2.7-V to 120-V, 1.1-MHz, Ultra-Precise Current Sense Amplifier
1 Features
3 Description
•
The INA290-Q1 is an ultra-precise current sense
amplifier that can measure voltage drops across shunt
resistors over a wide common-mode range from 2.7 V
to 120 V. It is in a highly space-efficient SC-70
package with a PCB footprint of only 2.0 mm × 2.1
mm. The ultra-precise current measurement accuracy
is achieved thanks to the combination of an ultra-low
offset voltage of ±12 µV (maximum), a small gain
error of ±0.1% (maximum), and a high DC CMRR of
160 dB (typical). The INA290-Q1 is not only designed
for DC current measurement, but also for high-speed
applications (like fast overcurrent protection, for
example) with a high bandwidth of 1.1 MHz (at gain of
20 V/V) and an 85-dB AC CMRR (at 50 kHz).
•
•
•
•
•
•
•
•
AEC-Q100 qualified for automotive applications:
– Temperature grade 1: –40°C to +125°C, TA
Functional Safety-Capable
– Documentation available to aid functional safety
system design
Wide common-mode voltage:
– Operational voltage: 2.7 V to 120 V
– Survival voltage: −20 V to +122 V
Excellent CMRR:
– 160-dB DC
– 85-dB AC at 50 kHz
Accuracy
– Gain:
• Gain error: ±0.1% (maximum)
• Gain drift: ±5 ppm/°C (maximum)
– Offset:
• Offset voltage: ±12 µV (maximum)
• Offset drift: ±0.2 µV/°C (maximum)
Available gains:
– A1 devices: 20 V/V
– A2 devices: 50 V/V
– A3 devices: 100 V/V
– A4 devices: 200 V/V
– A5 devices: 500 V/V
High bandwidth: 1.1 MHz
Slew rate: 2 V/µs
Quiescent current: 370 µA
The INA290-Q1 provides the capability to make ultraprecise current measurements by sensing the voltage
drop across a shunt resistor over a wide commonmode range from 2.7 V to 120 V. The INA290-Q1 is
available in the SC-70 package minimizing solution
size area.
Device Information
PACKAGE(1)
PART NUMBER
INA290-Q1
(1)
BODY SIZE (NOM)
SC-70 (5)
2.00 mm × 1.25 mm
For all available packages, see the package option
addendum at the end of the data sheet.
VS
VBUS
ISENSE
2 Applications
•
•
•
•
•
Solid-state LiDAR
Automotive HVAC compressor module
Automotive interior heater module
Automotive parking heater module
Automotive Pumps
R1
IN+
RSENSE
+
Bias
R1
IN±
Current
Feedback
OUT
±
Buffer
ADC
Load
RL
GND
Typical Application
An©IMPORTANT
NOTICEIncorporated
at the end of this data sheet addresses availability, warranty, changes, use in
safety-critical
applications,
Copyright
2020 Texas Instruments
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intellectual property matters and other important disclaimers. PRODUCTION DATA.
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SBOS995A – OCTOBER 2019 – REVISED NOVEMBER 2020
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions ..................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings ....................................... 4
6.2 ESD Ratings .............................................................. 4
6.3 Recommended Operating Conditions ........................4
6.4 Thermal Information ...................................................4
6.5 Electrical Characteristics ............................................5
6.6 Typical Characteristics................................................ 6
7 Detailed Description......................................................12
7.1 Overview................................................................... 12
7.2 Functional Block Diagram......................................... 12
7.3 Feature Description...................................................13
7.4 Device Functional Modes..........................................15
8 Application and Implementation.................................. 16
8.1 Application Information............................................. 16
8.2 Typical Application.................................................... 18
9 Power Supply Recommendations................................20
10 Layout...........................................................................20
10.1 Layout Guidelines................................................... 20
10.2 Layout Example...................................................... 20
11 Device and Documentation Support..........................21
11.1 Documentation Support.......................................... 21
11.2 Receiving Notification of Documentation Updates.. 21
11.3 Support Resources................................................. 21
11.4 Trademarks............................................................. 21
11.5 Electrostatic Discharge Caution.............................. 21
11.6 Glossary.................................................................. 21
12 Mechanical, Packaging, and Orderable
Information.................................................................... 21
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision * (October 2019) to Revision A (November 2020)
Page
• Changed the data sheet status from Advanced Information to Production Data ...............................................1
• Updated the numbering format for tables, figures, and cross-references throughout the document .................1
2
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5 Pin Configuration and Functions
OUT
1
GND
2
VS
3
5
IN±
4
IN+
Not to scale
Figure 5-1. DCK Package 5-Pin SC-70 Top View
Table 5-1. Pin Functions
PIN
TYPE
NAME
NO.
GND
2
Ground
DESCRIPTION
Ground
IN–
5
Input
Connect to load side of shunt resistor
IN+
4
Input
Connect to supply side of shunt resistor
OUT
1
Output
Output voltage
VS
3
Power
Power supply
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
UNIT
Vs
Supply Voltage
–0.3
22
V
Analog Inputs,
VIN+, VIN– (2)
Differential (VIN+) – (VIN–)
–30
30
V
Common - mode
Output
TA
Operating Temperature
TJ
Junction temperature
Tstg
Storage temperature
(1)
(2)
–20
122
V
GND – 0.3
Vs + 0.3
V
–55
150
°C
150
°C
150
°C
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
VIN+ and VIN– are the voltages at the VIN+ and VIN– pins, respectively.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
Electrostatic discharge
Human body model (HBM), per AEC Q100-002, all pins(1)
HBM ESD Classification Level 2
±2000
Charged device model (CDM), per AEC Q100-011, all pins
CDM ESD Classification Level C6
±1000
UNIT
V
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
Common-mode input range(1)
VCM
MIN
NOM
MAX
UNIT
VS
48
120
V
5
VS
Operating supply range
2.7
TA
Ambient temperature
–40
(1)
20
V
125
°C
Common-mode voltage can go below VS under certain conditions. See Figure 7-1 for additional information on operating range.
6.4 Thermal Information
INA290-Q1
THERMAL
METRIC(1)
DCK (SC-70)
UNIT
5 PINS
RθJA
Junction-to-ambient thermal resistance
191.6
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
144.4
°C/W
RθJB
Junction-to-board thermal resistance
69.2
°C/W
ΨJT
Junction-to-top characterization parameter
46.2
°C/W
ΨJB
Junction-to-board characterization parameter
69.0
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5 Electrical Characteristics
at TA = 25 °C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, VCM = VIN– = 48 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
140
160
MAX
UNIT
INPUT
CMRR
Vos
Common-mode rejection ratio
Offset voltage, input referred
VCM = 2.7 V to 120 V, TA = –40 °C to +125 °C
f = 50 kHz
dB
85
A1 devices
5
±25
A2 devices
3
±20
A3 devices
3
±15
A4, A5 devices
2
±12
dVos/dT
Offset voltage drift
TA = –40 °C to +125 °C
PSRR
Power supply rejection ratio,
input referred
VS = 2.7 V to 20 V, TA = –40 °C to +125 °C
IB
Input bias current
µV
0.2
µV/℃
0.05
±0.5
µV/V
IB+, VSENSE = 0 mV
10
20
30
IB–, VSENSE = 0 mV
10
20
30
µA
OUTPUT
G
Gain
Gain error
Gain error drift
A1 devices
20
A2 devices
50
A3 devices
100
A4 devices
200
A5 devices
500
A1, A2, A3 devices,
GND + 50 mV ≤ VOUT ≤ VS – 200 mV
0.02
±0.1
A4, A5 devices,
GND + 50 mV ≤ VOUT ≤ VS – 200 mV
0.02
±0.15
%
TA = –40 °C to +125 °C
1.5
Nonlinearity error
Maximum capacitive load
V/V
No sustained oscillations, no isolation resistor
5 ppm/°C
0.01
%
500
pF
VOLTAGE OUTPUT
Swing to VS power supply rail
RLOAD = 10 kΩ, TA = –40 °C to +125 °C
VS – 0.07
VS – 0.2
V
Swing to ground
RLOAD = 10 kΩ, VSENSE = 0 V, TA = –40 °C to
+125 °C
0.005
0.025
V
A1 devices, CLOAD = 5 pF, VSENSE = 200 mV
1100
A2 devices, CLOAD = 5 pF, VSENSE = 80 mV
1100
FREQUENCY RESPONSE
BW
SR
Bandwidth
A3 devices, CLOAD = 5 pF, VSENSE = 40 mV
900
A4 devices, CLOAD = 5 pF, VSENSE = 20 mV
850
A5 devices, CLOAD = 5 pF, VSENSE = 8 mV
800
Slew rate
Settling time
kHz
2
VOUT =4 V ± 0.1 V step, output settles to 0.5%
9
VOUT =4 V ± 0.1 V step, output settles to 1%
5
V/µs
µs
NOISE
Ven
Voltage noise density
50
nV/√Hz
POWER SUPPLY
VS
IQ
Supply voltage
Quiescent current, INA290
TA = –40 °C to +125 °C
2.7
20
370
TA = –40 °C to +125 °C
500
600
V
µA
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6.6 Typical Characteristics
Input Offset Voltage (PV)
12
10
8
6
4
2
0
-2
-4
-6
20
17.5
15
12.5
10
7.5
5
2.5
0
-2.5
-5
-7.5
Population
Population
All specifications at T A = 25 °C, V S = 5 V, V SENSE = V IN+ – V IN– = 0.5 V / Gain, and V CM = V IN– = 48 V, unless
otherwise noted.
Input Offset Voltage (PV)
Input Offset Voltage (PV)
10
8
6
4
2
0
-2
-4
Population
-6
12
10
8
6
4
2
0
-2
-4
-6
-8
Population
Figure 6-1. Input Offset Production Distribution, A1 Figure 6-2. Input Offset Production Distribution, A2
Devices
Devices
Input Offset Voltage (PV)
Figure 6-3. Input Offset Production Distribution, A3 Figure 6-4. Input Offset Production Distribution, A4
Devices
Devices
Population
Input Offset Voltage (PV)
8
4
0
-50
9
7.5
6
4.5
3
1.5
0
-1.5
-3
-4.5
-8
-75
-6
G
G
G
G
G
-4
-25
0
25
50
75 100
Temperature (qC)
125
=
=
=
=
=
20
50
100
200
500
150
175
Input Offset Voltage (PV)
Figure 6-5. Input Offset Production Distribution, A5
Devices
6
Figure 6-6. Input Offset Voltage vs Temperature
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180
10
0
G
G
G
G
G
-10
-20
-75
-50
-25
0
25
50
75 100
Temperature (qC)
125
=
=
=
=
=
20
50
100
200
500
150
Common-Mode Rejection Ratio (dB)
Common-Mode Rejection Ratio (nV/V)
20
160
140
120
100
80
60
40
20
10
175
100
1k
10k
Frequency (Hz)
100k
Figure 6-8. Common-Mode Rejection Ratio vs
Frequency
Figure 6-7. Common-Mode Rejection Ratio vs
Temperature
60
0.10
G
G
G
G
G
50
0.05
Gain Error (%)
40
Gain (dB)
1M
30
20
G
G
G
G
G
10
0
-10
10
=
=
=
=
=
20
50
100
200
500
=
=
=
=
=
20
50
100
200
500
0.00
-0.05
100
1k
10k
100k
Frequency (Hz)
1M
10M
-0.10
-75
-50
-25
0
25
50
75 100
Temperature (qC)
125
150
175
VSENSE = 4 V / Gain
Figure 6-9. Gain vs Frequency
Figure 6-10. Gain Error vs Temperature
160
G
G
G
G
G
60
45
=
=
=
=
=
20
50
100
200
500
30
15
0
-15
-30
-45
-75
-50
-25
0
25
50
75 100
Temperature (qC)
125
150
175
Figure 6-11. Power-Supply Rejection Ratio vs
Temperature
Power-Supply Rejection Ratio (dB)
Power-Supply Rejection Ratio (nV/V)
75
140
120
100
80
60
40
20
10
100
1k
10k
Frequency (Hz)
100k
1M
Figure 6-12. Power-Supply Rejection Ratio vs
Frequency
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25
25
20
20
15
VS
VS
VS
VS
10
=
=
=
=
5V
20V
2.7V
0V
5
Input Bias Current (PA)
Input Bias Current (PA)
SBOS995A – OCTOBER 2019 – REVISED NOVEMBER 2020
VS
VS
VS
VS
VS
VS
VS
VS
15
10
5
=
=
=
=
=
=
=
=
2.7 to 20V, VCM = 48V
2.7 to 20V, VCM = 120V
2.7 to 5V, VCM = 2.7V
20V, VCM = 7V
2.7 to 20V, VCM = 0V
0V, VCM = 48V
0V, VCM = 120V
0 to 20V, VCM = -20V
0
0
-5
-20
0
20
40
60
80
Common-Mode Voltage (V)
100
-5
-75
120
-50
-25
0
25
50
75 100
Temperature (qC)
125
150
175
VSENSE = 0 V
Figure 6-13. Input Bias Current vs Common-Mode
Voltage
Figure 6-14. Input Bias Current vs Temperature
140
240
IB+
IBIB+, VS = 0V
IB-, VS = 0V
Input Bias Current (PA)
160
100
120
80
40
0
-40
-80
80
60
40
20
0
-20
-40
-120
-60
-160
0
200
400
600
VSENSE (mV)
800
-80
1000
Figure 6-15. Input Bias Current vs VSENSE, A1
Devices
0
100
200
VSENSE (mV)
300
400
Figure 6-16. Input Bias Current vs VSENSE, A2 and
A3 Devices
100
VS
IB+, G=200
IB+, G=500
IBIB+, VS = 0V
IB-, VS = 0V
60
25qC
125qC
-40qC
VS - 1
Output Voltage (V)
80
Input Bias Current (PA)
IB+
IBIB+, VS = 0V
IB-, VS = 0V
120
Input Bias Current (PA)
200
40
20
VS - 2
GND + 2
GND + 1
0
GND
-20
0
20
40
60
VSENSE (mV)
80
100
0
5
10
15
20
25
Output Current (mA)
30
35
40
VS = 2.7 V
Figure 6-17. Input Bias Current vs VSENSE, A4 and
A5 Devices
8
Figure 6-18. Output Voltage vs Output Current
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VS
VS
25qC
125qC
-40qC
VS - 2
VS - 3
GND + 3
VS - 2
VS - 3
GND + 3
GND + 2
GND + 2
GND + 1
GND + 1
GND
GND
0
5
10
15
20
25
Output Current (mA)
30
35
0
40
VS = 5 V
5
10
15
20
25
Output Current (mA)
30
35
40
VS = 20 V
Figure 6-19. Output Voltage vs Output Current
Figure 6-20. Output Voltage vs Output Current
0.00
1000
500
200
100
50
-0.10
20
10
5
Swing to VS (V)
Output Impedance (:)
25qC
125qC
-40qC
VS - 1
Output Voltage (V)
Output Voltage (V)
VS - 1
2
1
0.5
0.2
0.1
0.05
-0.20
-0.30
-0.40
0.02
0.01
10
100
1k
10k
100k
Frequency (Hz)
1M
-0.50
-75
10M
VS = 5V
VS = 20V
VS = 2.7V
-50
-25
0
25
50
75 100
Temperature (qC)
125
150
175
RL = 10 kΩ
Figure 6-21. Output Impedance vs Frequency
Figure 6-22. Swing to Supply vs Temperature
0.020
Swing to GND (V)
0.015
0.010
0.005
0.000
-75
-50
-25
0
25
50
75 100
Temperature (qC)
125
150
175
Input-Referred Voltage Noise (nV/—Hz)
100
VS = 5V
VS = 20V
VS = 2.7V
G = 20
G = 500
80
70
60
50
40
30
20
10
10
100
1k
10k
Frequency (Hz)
100k
1M
RL = 10 kΩ
Figure 6-23. Swing to GND vs Temperature
Figure 6-24. Input Referred Noise vs Frequency
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400
Quiescent Current (PA)
Referred-to-Input
Voltage Noise (200 nV/div)
375
350
325
300
275
250
225
VS = 5V
VS = 20V
VS = 2.7V
200
175
0
2.5
5
7.5
10
12.5
Output Voltage (V)
Time (1 s/div)
Figure 6-25. Input Referred Noise
Short Circuit Current (mA)
Quiescent Current (PA)
20
50
400
375
350
325
VS = 5V
VS = 20V
VS = 2.7V
300
-75
-50
-25
0
25
50
75 100
Temperature (qC)
125
150
VS
VS
VS
VS
VS
VS
40
30
=
=
=
=
=
=
5V, Sourcing
5V, Sinking
20V, Sourcing
20V, Sinking
2.7V, Sourcing
2.7V, Sinking
20
10
0
-75
175
Figure 6-27. Quiescent Current vs Temperature,
INA290
-50
-25
0
25
50
75 100
Temperature (qC)
125
150
175
Figure 6-28. Short-Circuit Current vs Temperature
425
425
VS = 5V
VS = 20V
VS = 2.7V
400
Quiescent Current (PA)
400
Quiescent Current (PA)
17.5
Figure 6-26. Quiescent Current vs Output Voltage,
INA290
425
375
350
325
25qC
125qC
-40qC
300
0
2
4
6
8
10
12
14
Supply Voltage (V)
16
18
20
Figure 6-29. Quiescent Current vs Supply Voltage,
INA290
10
15
375
350
325
300
-20
0
20
40
60
80
Common-Mode Voltage (V)
100
120
Figure 6-30. Quiescent Current vs Common-Mode
Voltage, INA290
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2.7V
2.5V
0V
Input Voltage
5 mV/div
VCM
VOUT
Output Voltage
500 mV/div
SBOS995A – OCTOBER 2019 – REVISED NOVEMBER 2020
Output Voltage (2.5V/div)
Common-Mode Voltage (20V/div)
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Time (12.5Ps/div)
RL = 10 kΩ
0V
VSENSE = 5 mV
Time (10 Ps/div)
Figure 6-32. Step Response, A3 Devices
Figure 6-31. Common-Mode Voltage Fast Transient
Pulse, A5 DeviceAs
Voltage (1 V/div)
Voltage (1 V/div)
Supply Voltage
Output Voltage
0V
0V
Time (5 Ps/div)
Supply Voltage
Output Voltage
Time (25 Ps/div)
VSENSE = 0 mV
VSENSE = 5 mV
Figure 6-33. Start-Up Response
Figure 6-34. Supply Transient Response, A5
Devices
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7 Detailed Description
7.1 Overview
The INA290-Q1 is a high-side only current-sense amplifier that offers a wide common-mode range, precision
zero-drift topology, excellent common-mode rejection ratio (CMRR), high bandwidth, and fast slew rate. Different
gain versions are available to optimize the output dynamic range based on the application. The INA290-Q1 is
designed using a transconductance architecture with a current-feedback amplifier that enables low bias currents
of 20 µA and a common-mode voltage of 120 V.
7.2 Functional Block Diagram
VS
VBUS
ISENSE
R1
IN+
RSENSE
+
Bias
R1
IN±
Load
Current
Feedback
OUT
±
Buffer
RL
GND
12
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7.3 Feature Description
7.3.1 Amplifier Input Common-Mode Range
The INA290-Q1 supports large input common-mode voltages from 2.7 V to 120 V and features a high DC CMRR
of 160 dB (typical) and a 85-dB AC CMRR at 50 kHz. The minimum common-mode voltage is restricted by the
supply voltage as shown in Figure 7-1. The topology of the internal amplifiers INA290-Q1 restricts operation to
high-side, current-sensing applications.
Minimum Common-Mode Input Voltage (V)
8
7
6
5
4
3
2
VCM = 2.7V
1
0
0
2.5
5
7.5
10
12.5
Supply Voltage (V)
15
17.5
20
Figure 7-1. Minimum Common-Mode Voltage vs Supply
7.3.1.1 Input-Signal Bandwidth
The INA290-Q1 –3-dB bandwidth is gain dependent with several gain options of 20 V/V, 50 V/V, 100 V/V, 200
V/V, and 500 V/V as shown in Figure 6-8. The unique multistage design enables the amplifier to achieve high
bandwidth at all gains. This high bandwidth provides the throughput and fast response that is required for the
rapid detection and processing of overcurrent events.
The bandwidth of the device also depends on the applied V SENSE voltage. Figure 7-2 shows the bandwidth
performance profile of the device over frequency as output voltage increases for each gain variation. As shown
in Figure 7-2, the device exhibits the highest bandwidth with higher VSENSE voltages, and the bandwidth is higher
with lower device gain options. Individual requirements determine the acceptable limits of error for highfrequency, current-sensing applications. Testing and evaluation in the end application or circuit is required to
determine the acceptance criteria and validate whether or not the performance levels meet the system
specifications.
1200
1100
Bandwidth (kHz)
1000
900
800
700
600
500
G
G
G
G
G
400
300
=
=
=
=
=
20
50
100
200
500
200
0
0.5
1
1.5
2
2.5
Output Voltage (V)
3
3.5
4
Figure 7-2. Bandwidth vs Output Voltage
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7.3.1.2 Low Input Bias Current
The INA290-Q1 input bias current draws 20 μA (typical) even with common-mode voltages as high as 120 V.
This enables precision current sensing in applications where the sensed current is small or applications that
require lower input leakage current.
7.3.1.3 Low VSENSE Operation
The INA290-Q1 enables accurate current measurement across the entire valid V SENSE range. The zero-drift
input architecture of the INA290-Q1 provides the low offset voltage and low offset drift needed to measure low
VSENSE levels accurately across the wide operating temperature of –40 °C to +125 °C. The capability to measure
low sense voltages enables accurate measurements at lower load currents, and also allows reduction of the
sense resistor value for a given operating current, which minimizes the power loss in the current sensing
element.
7.3.1.4 Wide Fixed Gain Output
The INA290-Q1 gain error is < 0.1% at room temperature for most gain options, with a maximum drift of 5
ppm/°C over the full temperature range of –40 °C to +125 °C. The INA290-Q1 is available in multiple gain
options of 20 V/V, 50 V/V, 100 V/V, 200 V/V, and 500 V/V, which the system designer should select based on
their desired signal-to-noise ratio and other system requirements.
The INA290-Q1 closed-loop gain is set by a precision, low-drift internal resistor network. The ratio of these
resistors are excellently matched, while the absolute values may vary significantly. TI does not recommend
adding additional resistance around the INA290-Q1 to change the effective gain because of this variation,
however. The typical values of the gain resistors are described in Table 7-1.
Table 7-1. Fixed Gain Resistor
GAIN
R1
RL
20 (V/V)
25 kΩ
500 kΩ
50 (V/V)
10 kΩ
500 kΩ
100 (V/V)
10 kΩ
1000 kΩ
200 (V/V)
5 kΩ
1000 kΩ
500 (V/V)
2 kΩ
1000 kΩ
7.3.1.5 Wide Supply Range
The INA290-Q1 operates with a wide supply range from a 2.7 V to 20 V. The output stage supports a full-scale
output voltage range of up to V S. Wide output range can enable very-wide dynamic range current
measurements. For a gain of 20 V/V, the maximum differential input acceptable is 1 V.
The offset of the gain of INA290-Q1A1 device is ±25 μV, and the INA290-Q1A1 is capable of measuring a wide
dynamic range of current up to 92 dB.
14
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7.4 Device Functional Modes
7.4.1 Unidirectional Operation
The INA290-Q1 measures the differential voltage developed by current flowing through a resistor that is
commonly referred to as a current-sensing resistor or a current-shunt resistor. The INA290-Q1 operates in
unidirectional mode only, meaning it only senses current sourced from a power supply to a system load as
shown in Figure 7-3.
5V
48-V
Supply
ISENSE
R1
IN+
+
RSENSE
Bias
R1
Current
Feedback
±
IN±
Buffer
OUT
RL
Load
GND
Figure 7-3. Unidirectional Application
The linear range of the output stage is limited to how close the output voltage can approach ground under zeroinput conditions. The zero current output voltage of the INA290-Q1 is very small, with a maximum of GND + 25
mV. Make sure to apply a sense voltage of (25 mV / Gain) or greater to keep the INA290-Q1 output in the linear
region of operation.
7.4.2 High Signal Throughput
With a bandwidth of 1.1 MHz at a gain of 20 V/V and a slew rate of 2 V/µs, the INA290-Q1 is specifically
designed for detecting and protecting applications from fast inrush currents. As shown in Table 7-2, the INA290Q1 responds in less than 2 µs for a system measuring a 75-A threshold on a 2-mΩ shunt.
Table 7-2. Response Time
PARAMETER
EQUATION
INA290-Q1
AT VS = 5 V
G
Gain
20 V/V
IMAX
Maximum current
100 A
IThreshold
Threshold current
75 A
RSENSE
Current sense resistor value
2 mΩ
VOUT_MAX
Output voltage at maximum current
VOUT = IMAX × RSENSE × G
4V
VOUT_THR
Output voltage at threshold current
VOUT_THR = ITHR × RSENSE × G
3V
SR
Slew rate
Output response time
2 V/µs
Tresponse = VOUT_THR / SR
< 2 µs
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8 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification, and TI
does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes. Customers should validate and test their design
implementation to confirm system functionality.
8.1 Application Information
The INA290-Q1 amplifies the voltage developed across a current-sensing resistor as current flows through the
resistor to the load. The wide input common-mode voltage range and high common-mode rejection of the
INA290-Q1 allows use over a wide range of voltage rails while still maintaining an accurate current
measurement.
8.1.1 RSENSE and Device Gain Selection
The accuracy of any current-sense amplifier is maximized by choosing the current-sense resistor to be as large
as possible. A large sense resistor maximizes the differential input signal for a given amount of current flow and
reduces the error contribution of the offset voltage. However, there are practical limits as to how large the
current-sense resistor can be in a given application because of the resistor size and maximum allowable power
dissipation. Equation 1 gives the maximum value for the current-sense resistor for a given power dissipation
budget:
RSENSE
PDMAX
IMAX2
(1)
where:
•
•
PDMAX is the maximum allowable power dissipation in RSENSE.
IMAX is the maximum current that will flow through RSENSE.
An additional limitation on the size of the current-sense resistor and device gain is due to the power-supply
voltage, VS, and device swing-to-rail limitations. To make sure that the current-sense signal is properly passed to
the output, both positive and negative output swing limitations must be examined. Equation 2 provides the
maximum values of RSENSE and GAIN to keep the device from exceeding the positive swing limitation.
IMAX ª RSENSE ª *$,1 < VSP
(2)
where:
•
•
•
IMAX is the maximum current that will flow through RSENSE.
GAIN is the gain of the current-sense amplifier.
VSP is the positive output swing as specified in the data sheet.
To avoid positive output swing limitations when selecting the value of R SENSE, there is always a trade-off
between the value of the sense resistor and the gain of the device under consideration. If the sense resistor
selected for the maximum power dissipation is too large, then it is possible to select a lower-gain device in order
to avoid positive swing limitations.
The negative swing limitation places a limit on how small the sense resistor value can be for a given application.
Equation 3 provides the limit on the minimum value of the sense resistor.
IMIN ª RSENSE ª *$,1 > VSN
(3)
where:
•
16
IMIN is the minimum current that will flow through RSENSE.
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•
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GAIN is the gain of the current-sense amplifier.
VSN is the negative output swing of the device.
Table 8-1 shows an example of the different results obtained from using five different gain versions of the
INA290-Q1. From the table data, the highest gain device allows a smaller current-shunt resistor and decreased
power dissipation in the element.
Table 8-1. RSENSE Selection and Power Dissipation
PARAMETER(1)
G
Gain
VSENSE
Ideal differential input voltage (Ignores
swing limitation and power supply
variation.)
RSENSE
Current sense resistor value
PSENSE
Current-sense resistor power dissipation
(1)
RESULTS AT VS = 5 V
EQUATION
INA290A1Q
INA290A2Q
INA290A3Q
INA290A4Q
INA290A5Q
20 V/V
50 V/V
100 V/V
200 V/V
500 V/V
VSENSE = VOUT / G
250 mV
100 mV
50 mV
25 mV
10 mV
RSENSE = VSENSE / IMAX
25 mΩ
10 mΩ
5 mΩ
2.5 mΩ
1 mΩ
RSENSE x IMAX2
2.5 W
1W
0.5W
0.25 W
0.1 W
Design example with 10-A full-scale current with maximum output voltage set to 5 V.
8.1.2 Input Filtering
Note
Input filters are not required for accurate measurements using the INA290-Q1, and use of filters in this
location is not recommended. If filter components are used on the input of the amplifier, follow the
guidelines in this section to minimize the effects on performance.
Based strictly on user design requirements, external filtering of the current signal may be desired. The initial
location that can be considered for the filter is at the output of the current-sense amplifier. Although placing the
filter at the output satisfies the filtering requirements, this location changes the low output impedance measured
by any circuitry connected to the output voltage pin. The other location for filter placement is at the current-sense
amplifier input pins. This location also satisfies the filtering requirement, but the components must be carefully
selected to minimally impact device performance. Figure 8-1 shows a filter placed at the input pins.
VS
VCM
f3dB =
1
4ŒRINCIN
ISENSE
RIN
R1
IN+
+
CIN
RSENSE
Bias
RIN
R1
IN±
Current
Feedback
OUT
-
Load
Buffer
RL
GND
Figure 8-1. Filter at Input Pins
External series resistance provides a source of additional measurement error, so keep the value of these series
resistors to 10 Ω or less to reduce loss of accuracy. The internal bias network shown in Figure 8-1 creates a
mismatch in input bias currents (see Figure 6-15, Figure 6-16, and Figure 6-17) when a differential voltage is
applied between the input pins. If additional external series filter resistors are added to the circuit, a mismatch is
created in the voltage drop across the filter resistors. This voltage is a differential error voltage in the shunt
resistor voltage. In addition to the absolute resistor value, mismatch resulting from resistor tolerance can
significantly impact the error because this value is calculated based on the actual measured resistance.
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The measurement error expected from the additional external filter resistors can be calculated using Equation 4,
where the gain error factor is calculated using Equation 5.
Gain Error (%) = 100 x (Gain Error Factor í 1)
(4)
The gain error factor, shown in Equation 4, can be calculated to determine the gain error introduced by the
additional external series resistance. Equation 4 calculates the deviation of the shunt voltage, resulting from the
attenuation and imbalance created by the added external filter resistance. Table 8-2 provides the gain error
factor and gain error for several resistor values.
Gain Error Factor =
RB × R1
(RB × R1) + (RB × RIN) + (2 × RIN × R1)
(5)
Where:
• RIN is the external filter resistance value.
• R1 is the INA290-Q1 input resistance value specified in Table 7-1.
• RB in the internal bias resistance, which is 6600 Ω ± 20%.
Table 8-2. Example Gain Error Factor and Gain Error for 10-Ω External Filter Input Resistors
DEVICE (GAIN)
GAIN ERROR FACTOR
GAIN ERROR (%)
A1 devices (20)
0.99658
–0.34185
A2 devices (50)
0.99598
–0.40141
A3 devices (100)
0.99598
–0.40141
A4 devices (200)
0.99499
–0.50051
A5 devices (500)
0.99203
–0.79663
8.2 Typical Application
The INA290-Q1 is a unidirectional, current-sense amplifier capable of measuring currents through a resistive
shunt with shunt common-mode voltages from 2.7 V to 120 V. The circuit configuration for monitoring current in a
high-side pump or motor is shown in Figure 8-2 .
VSUPPLY
INA290-Q1
+
High-side
DC-Link Sensing
M
Figure 8-2. Current Sensing in a Automotive Pump
18
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8.2.1 Design Requirements
V SUPPLY is set to 5 V, and the common-mode voltage set to 48 V. Table 8-3 lists the design setup for this
application.
Table 8-3. Design Parameters
DESIGN PARAMETERS
EXAMPLE VALUE
INA290-Q1 supply voltage
5V
High-side supply voltage
48 V
Maximum sense current (IMAX)
5A
Gain option
50 V/V
8.2.2 Detailed Design Procedure
The maximum value of the current-sense resistor is calculated based choice of gain, value of the maximum
current the be sensed (I MAX), and the power-supply voltage (V S). When operating at the maximum current, the
output voltage must not exceed the positive output swing specification, VSP. Under the given design parameters,
Equation 6 calculates the maximum value for RSENSE as 19.2 mΩ.
RSENSE <
VSP
IMAX u GAIN
(6)
For this design example, a value of 15 mΩ is selected because, while the 15 mΩ is less than the maximum value
calculated, 15 mΩ is still large enough to give adequate signal at the current-sense amplifier output.
8.2.2.1 Overload Recovery With Negative VSENSE
The INA290-Q1 is a unidirectional current-sense amplifier that is meant to operate with a positive differential
input voltage (V SENSE). If negative V SENSE is applied, the device is placed in an overload condition and requires
time to recover once VSENSE returns positive. The required overload recovery time increases with more negative
VSENSE.
8.2.3 Application Curve
Figure 8-3 shows the output response of the device to a high frequency sinusoidal current.
VSENSE (20 mV/div)
INA290A2 VOUT (1 V/div)
Time (10Ps/div)
Figure 8-3. INA290-Q1 Output Response
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9 Power Supply Recommendations
The input circuitry of the INA290-Q1 device can accurately measure beyond the power-supply voltage. The
power supply can be 20 V, whereas the load power-supply voltage at IN+ and IN– can go up to 120 V. The
output voltage range of the OUT pin is limited by the voltage on the V S pin and the device swing to supply
specification.
10 Layout
10.1 Layout Guidelines
TI always recommends to follow good layout practices:
• Connect the input pins to the sensing resistor using a Kelvin or 4-wire connection. This connection technique
makes sure that only the current-sensing resistor impedance is detected between the input pins. Poor routing
of the current-sensing resistor commonly results in additional resistance present between the input pins.
Given the very low ohmic value of the current resistor, any additional high-current carrying impedance can
cause significant measurement errors.
• Place the power-supply bypass capacitor as close to the device power supply and ground pins as possible.
The recommended value of this bypass capacitor is 0.1 µF. Additional decoupling capacitance can be added
to compensate for noisy or high-impedance power supplies.
• When routing the connections from the current-sense resistor to the device, keep the trace lengths as short
as possible.
10.2 Layout Example
Load
RSENSE
TI Device
Current Sense
Output
OUT 1
5 IN±
Direction of
Current Flow
GND 2
Power Supply, VS
(2.7 V to 20 V)
VS 3
4 IN+
CBYPASS
VIA to Ground
Plane
Bus Voltage
Figure 10-1. Recommended Layout for INA290-Q1
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation, see the following:
Texas Instruments, INA290EVM User's Guide
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
11.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
11.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
11.6 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
INA290A1QDCKRQ1
ACTIVE
SC70
DCK
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1G6
INA290A2QDCKRQ1
ACTIVE
SC70
DCK
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1G8
INA290A3QDCKRQ1
ACTIVE
SC70
DCK
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1G7
INA290A4QDCKRQ1
ACTIVE
SC70
DCK
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1G9
INA290A5QDCKRQ1
ACTIVE
SC70
DCK
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1GA
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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