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ISO1176
SLLS897E – MARCH 2008 – REVISED JUNE 2015
ISO1176 Isolated RS-485 Profibus Transceiver
1 Features
3 Description
•
The ISO1176 device is an isolated differential line
transceiver designed for use in PROFIBUS
applications. The device is ideal for long transmission
lines because the ground loop is broken to provide for
operation with a much larger common-mode voltage
range. The symmetrical isolation barrier of each
device is tested to provide 2500 VRMS of isolation per
UL between the line transceiver and the logic level
interface.
1
•
•
•
•
•
•
•
•
•
Meets or Exceeds the Requirements of
EN 50170 and TIA/EIA-485-A
Signaling Rates up to 40 Mbps
Differential Output Exceeds 2.1 V (54-Ω Load)
Low Bus Capacitance – 10 pF (Maximum)
Up to 160 Transceivers on a Bus
50 kV/μs Typical Transient Immunity
Fail-Safe Receiver for Bus Open, Short, Idle
3.3-V Inputs are 5-V Tolerant
Bus-Pin ESD Protection
– 16-kV HBM Between Bus Pins and GND2
– 6-kV HBM Between Bus Pins and GND1
Safety and Regulatory Approvals
– 4000-VPK Isolation, 560-VPK VIORM per DIN V
VDE V 0884-10 (VDE V 0884-10): 2006-12
and DIN EN 61010-1
– 2500 VRMS Isolation Rating per UL 1577
– 4000 VPK Isolation Rating per CSA CA5A and
IEC 60950-1
The galvanically isolated differential bus transceiver is
an integrated circuit designed for bidirectional data
communication on multipoint bus-transmission lines.
The transceiver combines a galvanically isolated
differential line driver and differential input line
receiver. The driver has an active-high enable with
isolated enable-state output on the ISODE pin (pin
10) to facilitate direction control. The driver differential
outputs and the receiver differential inputs connect
internally to form a differential input/output (I/O) bus
port that is designed to offer minimum loading to the
bus allowing up to 160 nodes.
The PV pin (pin 7) is provided as a full-chip enable
option. All device outputs become high impedance
when a logic low is applied to the PV pin. For more
information, see the function tables in Device
Functional Modes.
2 Applications
•
•
•
•
•
•
Profibus
Factory Automation
Networked Sensors
Motor and Motion Control
HVA and Building Automation Networks
Networked Security Stations
Device Information(1)
PART NUMBER
ISO1176
PACKAGE
SOIC (16)
BODY SIZE (NOM)
10.30 mm × 7.50 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
R
RE
D
PV
DE
3
4
6
7
5
GALVANIC ISOLATION
ISO1176
Function Diagram
13
12
10
B
A
ISODE
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
ISO1176
SLLS897E – MARCH 2008 – REVISED JUNE 2015
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Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Description (continued).........................................
Pin Configuration and Functions .........................
Specifications.........................................................
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
7.10
7.11
7.12
8
1
1
1
2
4
4
5
Absolute Maximum Ratings ...................................... 5
ESD Ratings ............................................................ 5
Recommended Operating Conditions....................... 5
Thermal Information .................................................. 6
Electrical Characteristics: ISODE-Pin ....................... 6
Supply Current .......................................................... 6
Electrical Characteristics: Driver ............................... 7
Electrical Characteristics: Receiver .......................... 8
Power Dissipation Characteristics ............................ 8
Switching Characteristics: Driver ............................ 8
Switching Characteristics: Receiver........................ 9
Typical Characteristics .......................................... 10
Parameter Measurement Information ................ 12
9
Detailed Description ............................................ 18
9.1
9.2
9.3
9.4
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
18
18
19
21
10 Application and Implementation........................ 24
10.1 Application Information.......................................... 24
10.2 Typical Application ................................................ 24
11 Power Supply Recommendations ..................... 28
12 Layout................................................................... 28
12.1 Layout Guidelines ................................................. 28
12.2 Layout Example .................................................... 29
13 Device and Documentation Support ................. 30
13.1
13.2
13.3
13.4
13.5
Documentation Support .......................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
30
30
30
30
30
14 Mechanical, Packaging, and Orderable
Information ........................................................... 30
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision D (March 2010) to Revision E
Page
•
Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
•
VDE standard changed to DIN V VDE V 0884-10 (VDE V 0884-10): 2006-12...................................................................... 1
•
Changed the IEC 60664-1 Ratings Table. Basic isolation group SPECIFICATION entry From: IIIa To: II ......................... 19
Changes from Revision C (October 2008) to Revision D
Page
•
Added 560-Vpeak VIORM to the first Features List .................................................................................................................. 1
•
Added UL 1577, IEC 60747-5-2 (VDE 0884, Rev. 2), to the Features List............................................................................ 1
•
Added Input pulse width MIN = 10 ns to the RECOMMENDED OPERATING CONDITIONS table ..................................... 5
•
Added the CSA column to the Regulatory Information table................................................................................................ 20
•
Changed the ISO1176 “Sticky Bit” Issue section ................................................................................................................. 26
Changes from Revision B (June 2008) to Revision C
•
Changed the text in the second paragraph of the DESCRIPTION From: "whenever the driver is disabled or VCC2 =
0" To: "allowing up to 160 nodes.".......................................................................................................................................... 1
Changes from Revision A (May 2008) to Revision B
•
2
Page
Page
Changed L(IO1), Minimum air gap (Clearance) in the PACKAGE CHARACTERISTICS table From: MIN = 7.7mm
To: 8.34mm........................................................................................................................................................................... 19
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Changes from Original (March 2008) to Revision A
Page
•
Added 3.3-V Inputs are 5-V Tolerant to the Features List...................................................................................................... 1
•
Added the Bus-Pin ESD Protection bullet and sub bullets to the Features List..................................................................... 1
•
Added Bus pins to GND1 and Bus pins to GND2 to the ESD information in the Handling Rating table ............................... 5
•
Added the APPLICATION INFORMATION section.............................................................................................................. 24
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SLLS897E – MARCH 2008 – REVISED JUNE 2015
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5 Description (continued)
Any cabled I/O can be subjected to electrical noise transients from various sources. These noise transients can
cause damage to the transceiver and/or nearby sensitive circuitry if they are of sufficient magnitude and duration.
The ISO1176 can significantly reduce the risk of data corruption and damage to expensive control circuits.
The device is characterized for operation over the ambient temperature range of –40°C to +85°C.
6 Pin Configuration and Functions
DW Package
16-Pin SOIC
Top View
VCC1
1
16
VCC2
GND1
2
15
R
3
14
GND2
NC
RE
4
13
B
DE
D
5
12
6
11
A
NC
PV
7
10
GND1
8
9
ISODE
GND2
Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
A
12
I/O
Noninverting bus output
B
13
I/O
Inverting bus output
D
6
I
Driver input
DE
5
I
Driver logic-high enable
GND1
2, 8
—
Logic-side ground; internally connected
GND2
9, 15
—
Bus-side ground; internally connected
ISODE
10
—
Bus-side driver enable output
NC
11, 14
—
Not connected internally; may be left floating
PV
7
I
ISO1176 chip enable, logic high applied immediately after power up for device operation.
A logic low 3-states all outputs.
R
3
O
Receiver output
RE
4
I
Receiver logic-low enable
VCC1
1
—
Logic side power supply
VCC2
16
—
Bus side power supply
4
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7 Specifications
7.1 Absolute Maximum Ratings
over operating junction temperature range unless otherwise noted (1)
VCC
Supply voltage (2)
VO
Voltage at any bus I/O pins
VI
Voltage input
IO
Receiver output current
TJ
Maximum junction temperature
Tstg
Storage temperature
(1)
(2)
MIN
MAX
UNIT
VCC1, VCC2
–0.5
7
V
–9
14
V
D, DE or RE
–0.5
7
V
–10
10
mA
170
°C
150
°C
-65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage
values are with respect to the network ground terminal unless otherwise noted.
All voltage values except differential I/O bus voltages are with respect to the referenced network ground terminal and are peak voltage
values.
7.2 ESD Ratings
VALUE
Human body model (HBM), per ANSI/ESDA/JEDEC JS001 (1)
V(ESD)
Electrostatic
discharge
Bus pins to 2, 8
±6000
Bus pins to 9, 15
±16000
All pins
±4000
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins
(2)
Machine model (MM), per ANSI/ESDS5.2-1996, all pins
(1)
(2)
UNIT
V
±1000
±200
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
MIN
VCC
MAX
Logic-side supply voltage, VCC1 (with respect to GND1)
3.15
5.5
Bus-side supply voltage, VCC2 (with respect to GND2)
4.75
5.25
–7
12
2
5.5
VCM
Voltage at either bus I/O terminal
VIH
High-level input voltage
VIL
Low-level input voltage
VID
Differential input voltage
IO
NOM
Output current
A, B
PV, RE
D, DE
PV, RE
Ambient temperature
TJ
Junction temperature
0
0.8
D, DE
0.3 VCC1
A with respect to B
–12
12
Driver
–70
70
–8
8
Receiver
Input pulse width
TA
0.7 VCC1
10
–40
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V
V
V
V
V
mA
ns
25
85
°C
150
°C
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UNIT
5
ISO1176
SLLS897E – MARCH 2008 – REVISED JUNE 2015
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7.4 Thermal Information
ISO1176
THERMAL METRIC (1)
DW [SOIC]
UNIT
16 PINS
High-K board
81.4
Low-K board
168
RθJA
Junction-to-ambient thermal resistance
RθJC(top)
Junction-to-case (top) thermal resistance
41.4
°C/W
RθJB
Junction-to-board thermal resistance
46.4
°C/W
ψJT
Junction-to-top characterization parameter
13.1
°C/W
ψJB
Junction-to-board characterization parameter
45.8
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
°C/W
(1)
°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
7.5 Electrical Characteristics: ISODE-Pin
over recommended operating conditions (unless otherwise noted)
PARAMETER
VOH
High-level output voltage
VOL
Low-level output voltage
TEST CONDITIONS
MIN
TYP
IOH = –8 mA
VCC2 – 0.8
4.6
IOH = –20 μA
VCC2 – 0.1
5
MAX
UNIT
V
IOL = 8 mA
0.2
0.4
IOL = 20 μA
0
0.1
V
7.6 Supply Current
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
3V
ICC1
Logic-side RMS supply current
5.5 V
ICC2
6
Bus-side RMS supply current
5.25 V
TYP
MAX
DE at 0 V
MIN
4
6
DE at VCC1, 2 Mbps
5
DE at VCC1, 25 Mbps
6
DE at 0 V
7
DE at VCC1, 2 Mbps
8
DE at VCC1, 25 Mbps
11
DE at 0 V
15
DE at VCC1, 2 Mbps, 54-Ω load
70
DE at VCC1, 25 Mbps, 54-Ω load
75
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10
UNIT
mA
18
mA
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7.7 Electrical Characteristics: Driver
over recommended operating conditions (unless otherwise noted)
PARAMETER
VOD
TEST CONDITIONS
Open-circuit differential output voltage
MIN
Common-mode loading with Vtest from –7
V to 12 V, See Figure 10
2.1
RL = 54 Ω, See Figure 11 and Figure 12
–0.2
0.2
2
3
–0.2
0.2
VOC(SS)
Steady-state common-mode output voltage
ΔVOC(SS)
Change in steady-state common-mode output
RL = 54 Ω, See Figure 11 and Figure 12
voltage
VOC(PP)
Peak-to-peak common-mode output voltage
VOD(RING)
Differential output voltage over- and
undershoot
See Figure 13 and Figure 17
VI(HYS)
Input voltage hysteresis
See Figure 14
IO(OFF)
Output current with power off
VCC ≤ 2.5 V
IOZ
High-impedance state output current
DE at 0 V
IOS(P)
Peak short-circuit output current
(1)
10%
V
V
–10
PV (1) at 0 V or VCC1
mV
10
μA
120
See receiver input
current in Electrical
Characteristics:
Receiver
VOS = –7 V to 12 V
DE at VCC, See
Figure 15 and
Figure 16
VOD(pp)
150
D, DE at 0 V or VCC1
Input current
Common-mode transient immunity
V
0.5
II
CMTI
V
2.1
Change in steady-state differential output
voltage between logic states
Differential output capacitance
VCC2
1.5
|ΔVOD(SS)|
COD
UNIT
See Figure 9 and Figure 13
Steady-state differential output voltage
magnitude
Steady-state short-circuit output current
MAX
|VA – VB|, Figure 8
|VOD(SS)|
IOS(SS)
TYP
–250
VOS = 12 V, D at
GND1
VOS = –7 V, D at
VCC1
250
135
mA
–135
See receiver CIN in
Electrical
Characteristics:
Receiver
See Figure 27
25
kV/μs
The PV pin has a 50-kΩ pullup resistor and leakage current depends on supply voltage.
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7.8 Electrical Characteristics: Receiver
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VIT(+)
Positive-going differential input voltage threshold
VIT(–)
Negative-going differential input voltage threshold
Vhys
Hysteresis voltage (VIT+ – VIT-)
VOH
SeeFigure 22
High-level output voltage
VCC1 at 3.3 V and VCC2 at
5V
MIN
IO = –8 mA
IO = 8 mA
–200
TYP
MAX
UNIT
–80
–10
mV
–120
mV
40
mV
VID = 200 mV,
See Figure 22
IOH = –8 mA
VCC1 –0.4
3
IO H = –20 μA
VCC1 –0.1
3.3
V
VOL
Low-level output voltage
VID = –200 mV,
See Figure 22
IO L = 8 mA
0.2
0.4
IOL = 20 μA
0
0.1
VOH
High-level output voltage
VID = 200 mV,
See Figure 22
IOH = –8 mA
VCC1 –0.8
4.6
IO H = –20 μA
VCC1 –0.1
5
Low-level output voltage
VID = –200 mV,
See Figure 22
IO L = 8 mA
IA(OFF)
IB(OFF)
Bus pin input current
VI = –7 V or 12 V,
Other input = 0 V
II
Receiver enable input current
IOZ
High-impedance state output current
RID
VCC1 at 5 V and VCC2 at 5
V
VOL
IA, IB
V
0.2
0.4
0
0.1
IOL = –20 μA
V
V
VCC = 4.75 V or 5.25 V
–160
200
μA
RE = 0 V
–50
50
μA
RE = VCC1
–1
1
Differential input resistance
A, B
48
CID
Differential input capacitance
Test input signal is a 1.5-MHz sine wave with
1 Vpp amplitude , CD is measured across
A and B
7
CMR
Common-mode rejection
See Figure 26
4
VCC2 = 0 V
μA
kΩ
10
pF
V
7.9 Power Dissipation Characteristics
PARAMETER
PD
Power Dissipation
VALUE
UNIT
220
mW
VCC1 = VCC2 = 5.25 V, TJ = 150°C, CL = 15 pF,
Input a 20 MHz 50% duty-cycle square wave
7.10 Switching Characteristics: Driver
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
tpLH, tpHL
Propagation delay time
tsk(p)
Pulse skew (|tp HL – tpLH|)
tpLH, tpHL
Propagation delay time
tsk(p)
Pulse skew (|tp HL – tp LH|)
tr
Differential output signal rise time
tf
Differential output signal fall time
tpDE
DE to ISODE prop delay
tt(MLH), tt(MHL)
Output transition skew
tp(AZH), tp(BZH)
tp(AZL), tp(BZL)
Propagation delay time, high-impedance-to-active output
tp(AHZ), tp(BHZ)
tp(ALZ), tp(BLZ)
Propagation delay time, active-to-high-impedance output
|tp(AZL) – tp(BZH)|
|tp(AZH) – tp(BZL)|
Enable skew time
t(CFB)
Time from application of short-circuit to current foldback
See Figure 16
t(TSD)
Time from application of short-circuit to thermal shutdown
TA = 25°C, See Figure 16
8
MIN
VCC1 at 5 V
VCC2 at 5 V
VCC1 at 3.3 V
VCC2 at 5 V
TYP MAX
2
UNIT
35
ns
5
ns
40
ns
2
5
ns
2
3
7.5
ns
2
3
7.5
ns
See Figure 21
30
ns
See Figure 18
1
ns
80
ns
80
ns
1.5
ns
See Figure 17
CL = 50 pF,
RE at 0 V,
See Figure 19 and
Figure 20
0.55
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0.5
100
μs
μs
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7.11 Switching Characteristics: Receiver
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
tpLH, tpHL
Propagation delay time
tsk(p)
Pulse skew (|tp HL – tpLH|)
tpLH, tpHL
Propagation delay time
tsk(p)
Pulse skew (|tp HL – tp LH|)
tr
tf
tpZH
Propagation delay time, high-impedance-to-high-level output
tpHZ
Propagation delay time, high-level-to-high-impedance output
tpZL
Propagation delay time, high-impedance-to-low-level output
tpLZ
Propagation delay time, low-level-to-high-impedance output
MIN
TYP MAX
UNIT
50
ns
5
ns
55
ns
2
5
ns
Output signal rise time
2
4
ns
Output signal fall time
2
4
ns
DE at VCC1,
See Figure 24
13
25
ns
13
25
ns
DE at VCC,
See Figure 25
13
25
ns
13
25
ns
VCC1 at 5 V, VCC2 at 5 V
VCC1 at 3.3 V, VCC2 at 5 V
2
See Figure 23
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7.12 Typical Characteristics
100
5
VCC = 5 V
VCC = 5.25 V
4
50 Ω
VCC = 4.75 V
2.5
2
1.5
60
50
40
30
20
0.5
10
TA = 25 C
0
80
ICC1
0
4
RL = 54 Ω,
CL = 50 pF
3.75
Driver Rise, Fall Time − ns
VCC = 4.75 V
0.25
VCC = 5 V
0.2
0.15
VCC = 5.25 V
0.1
0.05
0
−40
5
10
15
Signalling Rate - Mbps
20
Figure 2. RMS Supply Current vs Signaling Rate
0.35
0.3
5 V VCC1
3.3 V VCC1
0
20
40
60
IL − Load Current − mA
Figure 1. Differential Output Voltage vs Load Current
Driver Output Transition Skew − ns
70
1
0
ICC2
80
3.5
3
No Load
TA = 25°C
90
100 Ω
ICC - Supply Current - mA
VOD − Differential Output Voltage − V
4.5
RL = 54 Ω,
CL = 50 pF
VCC = 4.75 V
3.5
VCC = 5 V
3.25
3
VCC = 5.25 V
2.75
2.5
2.25
−15
10
35
60
TA − Free-Air Temperature − °C
2
−40
85
Figure 3. Driver Output Transition Skew vs Free-Air
Temperature
−15
10
35
60
TA − Free-Air Temperature − °C
85
Figure 4. Driver Rise and Fall Time vs Free-Air Temperature
0.7
-99
VCC = 4.75 V
15 pF Load
TA = 25°C
-89
0.6
IO - Output Current - mA
Driver Enable Skew − ns
-79
0.5
0.4
VCC = 5.25 V
VCC = 5 V
0.3
0.2
-69
-59
-49
-39
-29
-19
0.1
0
−40
RL = 110 Ω,
CL = 50 pF
−15
10
35
60
TA − Free-Air Temperature − °C
-9
85
1
2
3
4
5
VO - Output Voltage - V
Figure 5. Driver Enable Skew vs Free-Air Temperature
10
1
0
Figure 6. High-Level Output Voltage vs High-Level Output
Current
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Typical Characteristics (continued)
110
15 pF Load
TA = 25°C
100
IO - Output Current - mA
90
80
70
60
50
40
30
20
10
0
0
1
2
3
VO - Output Voltage - V
4
5
Figure 7. Low-Level Output Voltage vs Low-Level Output Current
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8 Parameter Measurement Information
VCC1
IOA
DE
A
0 or
VCC1
I
D
VOD
B
GND 1
VI
IOB
GND 2
VOA
VOB
GND 1
GND 2
Figure 8. Open Circuit Voltage Test Circuit
VCC1
IOA
DE
A
0 or
VCC1
II
D
VOD
B
IOB
GND 2
GND 1
54 W
VI
VOB
VOA
GND 2
GND 1
Figure 9. VOD Test Circuit
VCC2
DE
D
0 or 3 V
375 W
A
B
GND 2
+
VOD
-
60 W
-7 V
to
12 V
375 W
Figure 10. Driver VOD With Common-Mode Loading Test Circuit
12
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Copyright © 2008–2015, Texas Instruments Incorporated
Product Folder Links: ISO1176
ISO1176
www.ti.com
SLLS897E – MARCH 2008 – REVISED JUNE 2015
Parameter Measurement Information (continued)
VCC1
RL
2
IOA
DE
A
II
0 or
VCC1
D
VOD
B
GND 1
RL
2
IOB
GND 2
VI
VOB
VOA
VOC
GND 2
GND 1
Figure 11. Driver VOD and VOC Without Common-Mode Loading Test Circuit
VCC1
RL
2
IOA
DE
A
II
Input
Generator PRR = 500 kHz,
50% duty cycle, tr < 6 ns,
tt < 6 ns, ZO = 50 Ω
D
GND 1
VI
VOD
B
GND 2
VOB
GND 1
RL
2
IOB
VOA
A
VA
B
VB
V
OC
VOC(p-p)
VOC
VOC(SS )
GND 2
Figure 12. Steady-State Output Voltage Test Circuit and Voltage Waveforms
VDO(RING)
VDO(SS)
VOD(pp)
0 V Differential
Figure 13. VOD(RING) Waveform and Definitions
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Copyright © 2008–2015, Texas Instruments Incorporated
Product Folder Links: ISO1176
13
ISO1176
SLLS897E – MARCH 2008 – REVISED JUNE 2015
www.ti.com
Parameter Measurement Information (continued)
VCC1
IOA
DE
A
II
0 or
VCC1
D
VOD
B
GND 2
GND 1
VI
IOB
VOA
VOB
GND 1
54 W
GND 2
Figure 14. Input Voltage Hysteresis Test Circuit
DE
0.5 W
D
I OS
B
Vos
GND 1
GND 2
Output Current - mA
250
I OS
A
120
60
t(CFB)
GND 2
time
t(TSD)
Figure 15. Driver Short-Circuit Test Circuit and Waveforms (Short-Circuit Applied at Time t=0)
DE
I OS
B
I OS
250
D
Vos
GND 1
GND 2
GND 2
Output Current - mA
A
120
60
t(CFB)
time
t(TSD)
Figure 16. IOS(SS) Steady State Short-Circuit Output Current Test Circuit
3V
DE
VCC1
A
D
Input
Generator
VI
B
VOD
RL = 54 W
±1%
CL = 50 pF
± 20%
VI
1.5 V
tPHL
tPLH
50 W
GND 1
Generator PRR = 500 kHz, 50 % Duty
Cycle, tr