ISO5500
SLLSE64E – SEPTEMBER 2011 – REVISED APRIL 2022
ISO5500 2.5-A Isolated IGBT, MOSFET Gate Driver
•
•
•
•
•
•
•
•
•
•
•
•
•
•
2.5-A maximum peak output current
Drives IGBTs up to IC = 150 A, VCE = 600 V
Capacitive isolated fault feedback
CMOS/TTL compatible inputs
300-ns maximum propagation delay
Soft IGBT turnoff
Integrated fail-safe IGBT protection
– High VCE (DESAT) detection
– Undervoltage lockout (UVLO) protection with
hysteresis
User configurable functions
– Inverting, non-inverting inputs
– Auto-reset
– Auto-shutdown
Wide VCC1 range: 3 V to 5.5 V
Wide VCC2 range: 15 V to 30 V
Operating temperature: –40°C to 125°C
Wide-body SO-16 package
±50-kV/us transient immunity typical
Safety and Regulatory Approvals:
– VDE 4000 VPK Basic Isolation per DIN V VDE V
0884-11
– 2500 VRMS Isolation for One Minute per UL
1577
– CSA 62368-1:19, CSA 61010-1-12, UPD1:
2015, UPD2:2016, AMD1:2018
The device provides over-current protection (DESAT)
to an IGBT or MOSFET while an Undervoltage
Lockout circuit (UVLO) monitors the output power
supply to ensure sufficient gate drive voltage. If the
output supply drops below 12 V, the UVLO turns the
power transistor off by driving the gate drive output to
a logic low state.
For a DESAT fault, the ISO5500 initiates a soft
shutdown procedure that slowly reduces the IGBT/
MOSFET current to zero while preventing large
di/dt induced voltage spikes. A fault signal is then
transmitted across the isolation barrier, actively driving
the open-drain FAULT output low and disabling the
device inputs. The inputs are blocked as long as the
FAULT-pin is low. FAULT remains low until the inputs
are configured for an output low state, followed by a
logic low input on the RESET pin.
The ISO5500 is available in a 16-pin SOIC package
and is specified for operating temperatures from –
40°C to 125°C.
Device Information
PART NUMBER(1)
ISO5500
(1)
2 Applications
VCC1
•
VIN+
Isolated IGBT and MOSFET Drives in
– Motor Control
– Motion Control
– Industrial Inverters
– Switched-Mode Power Supplies
PACKAGE
BODY SIZE (NOM)
SOIC (16)
10.30 mm × 7.50 mm
For all available packages, see the orderable addendum at
the end of the data sheet.
ISO5500
VREG
VCC2
-
UVLO
+
V INISO - Barri er
1 Features
DELAY
FAULT
Gate
Drive
VC
DESAT
+
DESAT
-
12 .3V
and
7.2 V
Fault
Logic
Q1b
Q1a
Q4
VOUT
Q S
3 Description
The ISO5500 is an isolated gate driver for IGBTs and
MOSFETs with power ratings of up to IC = 150 A and
VCE = 600 V. Input TTL logic and output power
stage are separated by a capacitive, silicon dioxide
(SiO2), isolation barrier. When used in conjunction
with isolated power supplies, the device blocks high
voltage, isolates ground, and prevents noise currents
from entering the local ground and interfering with or
damaging sensitive circuitry.
VE
R
RESET
Q3
Q2b
Q2a
VEE-P
GND1
VEE-L
Functional Block Diagram
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
ISO5500
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SLLSE64E – SEPTEMBER 2011 – REVISED APRIL 2022
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings........................................ 4
6.2 ESD Ratings............................................................... 4
6.3 Recommended Operating Conditions.........................4
6.4 Thermal Information....................................................5
6.5 Electrical Characteristics.............................................5
6.6 Switching Characteristics............................................6
6.7 Typical Characteristics................................................ 7
7 Parameter Measurement Information.......................... 12
8 Detailed Description......................................................16
8.1 Overview................................................................... 16
8.2 Functional Block Diagram......................................... 16
8.3 Feature Description...................................................17
8.4 Device Functional Modes..........................................25
9 Application and Implementation.................................. 26
9.1 Application Information............................................. 26
9.2 Typical Application.................................................... 26
10 Power Supply Recommendations..............................35
11 Layout........................................................................... 35
11.1 Layout Guidelines................................................... 35
11.2 PCB Material........................................................... 35
11.3 Layout Example...................................................... 35
12 Device and Documentation Support..........................36
12.1 Device Support....................................................... 36
12.2 Documentation Support.......................................... 36
12.3 Receiving Notification of Documentation Updates..36
12.4 Support Resources................................................. 36
12.5 Trademarks............................................................. 36
12.6 Electrostatic Discharge Caution..............................36
12.7 Glossary..................................................................36
13 Mechanical, Packaging, and Orderable
Information.................................................................... 36
4 Revision History
Changes from Revision D (January 2015) to Revision E (April 2022)
Page
• Changed Safety and Regulatory Approvals........................................................................................................1
• Changed rows VIORM, VPR, VIOTM and VISO .....................................................................................................17
• Changed the Regulatory Information table....................................................................................................... 17
Changes from Revision C (June 2013) to Revision D (January 2015)
Page
• Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device
Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout
section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information
section ............................................................................................................................................................... 1
• VDE standard changed to DIN V VDE V 0884-10 (VDE V 0884-10):2006-12 .................................................. 1
• Added FAULT limits to Absolute Maximum Ratings ...........................................................................................4
2
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5 Pin Configuration and Functions
VIN+
1
16
VE
VIN-
2
15
VEE-L
14
DESAT
13
VCC2
12
VC
11
VOUT
3
4
RESET
5
FAULT
6
NC
7
10
VEE-L
GND1
8
9
VEE-P
ISOLATION
VCC1
GND1
Figure 5-1. DW Package 16-Pin SOIC Top View
Table 5-1. Pin Functions
PIN
NO.
NAME
I/O
DESCRIPTION
1
VIN+
I
Noninverting gate drive voltage control input
2
VIN–
I
Inverting gate drive voltage control input
3
VCC1
Supply
Positive input supply (3 V to 5.5 V)
4,8
GND1
Ground
Input ground
5
RESET
I
FAULT reset input
6
FAULT
O
Open-drain output. Connect to 3.3k pullup resistor
7
NC
NC
9
VEE-P
Supply
Not connected
Most negative output-supply potential of the power output. Connect externally to pin 10.
10, 15
VEE-L
Supply
Most negative output-supply potential of the logic circuitry. Pin 10 and 15 are internally connected.
Connect at least pin 10 externally to pin 9. Pin 15 can be floating.
11
VOUT
O
12
VC
Supply
Gate driver supply. Connect to VCC2.
13
VCC2
Supply
Most positive output supply potential
14
DESAT
I
16
VE
Ground
Gate drive output voltage
Desaturation voltage input
Gate drive common. Connect to IGBT Emitter.
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
Supply voltage, VCC1
Total output supply voltage, VOUT(total)
(VCC2 – VEE-P)
Positive output supply voltage, VOUT+
(VCC2 – VE)
Negative output supply voltage, VOUT-
(VE – VEE-P)
MIN
MAX(1)
UNIT
–0.5
6
V
–0.5
35
V
–0.5
35 –
(VE – VEE-P)
V
V
–0.5
VCC2
VE – 0.5
VCC2
VIN+, VIN–, RESET, FAULT
–0.5
6
Vo(peak)
–0.5
VCC2
V
–0.5
VCC2
V
±2.8
A
FAULT output current, IFL
±20
mA
Maximum junction temperature, TJ
170
°C
150
°C
DESAT
Voltage at
Peak gate drive output voltage
Collector voltage, VC
Output current , IO (2)
Storage temperature, Tstg
(1)
(2)
–65
V
Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If
outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and
this may affect device reliability, functionality, performance, and shorten the device lifetime.
Maximum pulse width = 10 μs, maximum duty cycle = 0.2%.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±4000
Charged-device model (CDM), per JEDEC specification JESD22C101(2)
±1500
Machine model JEDEC JESD22-A115-A
±200
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
4
NOM
MAX
UNIT
VCC1
Supply voltage
3
5.5
V
VOUT(total)
Total output supply voltage (VCC2 – VEE-P)
15
30
V
VOUT+
Positive output supply voltage (VCC2 – VE)
15
30 – (VE –
VEE-P)
V
VOUT–
Negative output supply voltage (VE – VEE-P)
0
15
V
VC
Collector voltage
VEE-P + 8
VCC2
V
tui
Input pulse width
0.1
μs
tuiR
RESET Input pulse width
0.1
μs
VIH
High-level input voltage (VIN+, VIN–, RESET)
2
VCC
V
VIL
Low-level input voltage (VIN+, VIN–, RESET)
0
0.8
V
fINP
Input frequency
VSUP_SR
Supply Slew Rate (VCC1 or VCC2 – VEE-P) (1)
TJ
Junction temperature
–40
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520(2)
kHz
75
V/ms
150
°C
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6.3 Recommended Operating Conditions (continued)
over operating free-air temperature range (unless otherwise noted)
TA
(1)
(2)
Ambient temperature
MIN
NOM
MAX
UNIT
-40
25
125
°C
If VCC1 skew is faster than 75 V/ms (especially for the falling edge) then VCC2 must be powered up after VCC1 and powered down
before VCC1 to avoid output glitches.
If TA = 125°C, VCC1= 5.5 V, VCC2 = 30 V, RG = 10 Ω, CL = 1 nF
6.4 Thermal Information
ISO5500
THERMAL METRIC(1)
θJA
Junction-to-ambient thermal resistance
76
θJCtop
Junction-to-case (top) thermal resistance
34
θJB
Junction-to-board thermal resistance
36
ψJT
Junction-to-top characterization parameter
8
ψJB
Junction-to-board characterization parameter
TSHDN+
TSHDN-
UNIT
DW (SOIC) 16
PINS
°C/W
35
Thermal Shutdown
185
°C
173
°C
TSHDN-HYS
Thermal Shutdown Hysteresis
12
°C
PD
Power Dissipation See Equation 2 through Equation 6
592
mW
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
6.5 Electrical Characteristics
All typical values are at TA = 25°C, VCC1 = 5 V, VCC2 – VE = 30 V, VE – VEE-P = 0 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
Quiescent
ICC1
Supply current
ICC2
Supply current
ICH
High-level collector current
300 kHz
Quiescent
300 kHz
MIN
VI = VCC1 or 0 V, No load, See Figure 6-1,
Figure 6-2, Figure 7-1, and Figure 7-2
VI = VCC1 or 0 V, No load, See Figure 6-3
through Figure 6-5, Figure 7-3, and Figure
7-4
TYP
MAX
5.5
8.5
5.7
8.7
8.4
12
9
14
IOUT = 0, See Figure 6-27 and Figure 7-3
1.3
IOUT = –650 μA, See Figure 6-27 and Figure
7-3
1.9
ICL
Low-level collector current
See Figure 6-27 and Figure 7-4
IEH
VE High-level supply current
See Figure 6-6 and Figure 7-13
–0.5
–0.3
IEL
VE Low-level supply current
See Figure 6-6 and Figure 7-14
–0.8
–0.53
IIH
High-level input leakage
IIL
Low-level input leakage
IFH
High-level FAULT pin output current
VFAULT = VCC1, no pull-up,
See Figure 7-6
IFL
Low-level FAULT pin output current
VFAULT = 0.4 V, no pull-up, See Figure 7-7
VIT+(UVLO)
Positive-going UVLO threshold voltage
VIT–(UVLO)
Negative-going UVLO threshold voltage
VHYS (UVLO)
UVLO Hysteresis voltage (VIT+ – VIT–)
IOH
IOL
High-level output current
Low-level output current
IN from 0 to VCC
0.4
VOUT = VCC2 – 4 V(1), See Figure 6-7 and
Figure 7-8
VOUT = VCC2 – 15 V(2), See Figure 6-7 and
Figure 7-8
10
5
12
11.6
12.3
13.5
11.1
12.4
0.7
1.2
–1
–1.6
mA
mA
mA
mA
–10
See Figure 7-5
mA
mA
10
–10
UNIT
μA
μA
mA
V
A
–2.5
VOUT = VEE-P + 2.5 V(1), See Figure 6-8 and
Figure 7-9
1
VOUT = VEE-P + 15 V(2), See Figure 6-8 and
Figure 7-9
2.5
1.8
A
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6.5 Electrical Characteristics (continued)
All typical values are at TA = 25°C, VCC1 = 5 V, VCC2 – VE = 30 V, VE – VEE-P = 0 V (unless otherwise noted)
PARAMETER
IOF
TEST CONDITIONS
Output-low fault current
VOH
High-level output voltage
MIN
TYP
MAX
UNIT
VOUT – VEE-P = 14 V, See Figure 6-9 and
Figure 7-10
90
140
230
mA
IOUT = –100 mA, See Figure 6-10, Figure
6-11 and Figure 7-11
VC-1.5
VC-0.8
IOUT = –650 μA, See Figure 6-10, Figure
6-11 and Figure 7-11
VC-0.15
VC-0.05
VOL
Low-level output voltage
IOUT = 100 mA, See Figure 6-12, Figure 6-13
and Figure 7-12
ICHG
Blanking capacitor charging current
VDESAT = 0 V to 6 V, See Figure 6-14 and
Figure 7-15
IDSCHG
Blanking capacitor discharge current
VDSTH
CMTI
(1)
(2)
V
0.2
0.5
V
–180
–270
–380
μA
VDESAT = 8 V, See Figure 7-15
20
45
DESAT threshold voltage
(VCC2 – VE) > VTH-(UVLO), See Figure 6-15
and Figure 7-15
6.7
7.2
Common mode transient immunity
VI = VCC1 or 0 V, VCM at 1500 V,
See Figure 7-16 though Figure 7-19
25
50
mA
7.7
V
kV/μS
Maximum pulse width is 50 μs, maximum duty cycle is 0.5%
Maximum pulse width is 10 μs, maximum duty cycle is 0.2%
6.6 Switching Characteristics
All typical values are at TA = 25°C, VCC1 = 5 V, VCC2 – VE = 30 V, VE – VEE-P = 0 V (unless otherwise noted)
PARAMETER
tPLH, tPHL
Propagation Delay
tsk-p
Pulse Skew |tPHL – tPLH|
TEST CONDITIONS
RG = 10 Ω, CG = 10 nF,
50 % duty cycle, 10 kHz input,
VCC2 – VEE = 30 V,
VE – VEE = 0 V, See Figure
6-16 through Figure 6-19, Figure
6-26, Figure 7-20, Figure 7-22, and
Figure 7-23
skew(1)
MIN
TYP
MAX
UNIT
150
200
300
ns
1.7
10
ns
45
ns
50
ns
tsk-pp
Part-to-part
tsk2-pp
Part-to-part skew(2)
tr
Output signal rise time
tf
Output signal fall time
tDESAT (90%)
DESAT sense to 90% VOUT delay
300
550
ns
tDESAT (10%)
DESAT sense to 10% VOUT delay
1.8
2.3
μs
290
550
ns
–50
55
ns
10
ns
tRESET ( FAULT)
RG = 10 Ω, CG = 10 nF,
VCC2 – VEE-P = 30 V,
VE – VEE-P = 0 V, See Figure 6-20
DESAT sense to FAULT low output delay
through Figure 6-25, Figure 7-21
DESAT sense to DESAT low propagation delay
and Figure 7-24
RESET to high-level FAULT signal delay
tUVLO (ON)
UVLO to VOUT high delay
1ms ramp from 0 V to 30 V
4
μs
tUVLO (OFF)
UVLO to VOUT low delay
1ms ramp from 30 V to 0 V
6
μs
tFS
Failsafe output delay time from input power
loss
2.8
μs
tDESAT ( FAULT)
tDESAT (LOW)
(1)
3
8.2
ns
13
μs
tsk-pp is the maximum difference in same edge propagation delay times (either VIN+ to VOUT or VIN– to VOUT) between
two devices operating at the same supply voltage, same temperature, and having identical packages and test circuits.
i.e. max
(2)
180
(
(
ìé
ï ëtP HL-ma x VCC1, VCC2, TA
í
ï ëétP LH-ma x VCC1, VCC2, TA
î
))-
(
(
)
)
tPHL -m in VCC1, VCC2,TA ûù,ïü
ý
tPL H-m in VCC1, VCC2,TA ûù ï
þ
tsk2-pp is the propagation delay difference in high-to-low to low-to-high transition ( any of the combinations VIN+ to VOUT or VIN– to
VOUT) between two devices operating at the same supply voltage, same temperature, and having identical packages and test circuits.
i.e.
min = tPHL-min (VCC1, VCC2,TA ) - tPLH-max (VCC1 ,VCC2 ,TA )
max = tP HL -ma x (VCC1, VCC2,TA ) - tPL H-min (VCC1, VCC2,TA )
6
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6.7 Typical Characteristics
8
7
ICC1 - Supply Current (mA)
ICC1 - Supply Current (mA)
7
6
5
4
3
2
VCC1 = 4.5 V
VCC1 = 5 V
VCC1 = 5.5 V
VCC1 = 3 V
VCC1 = 3.3 V
VCC1 = 3.6 V
1
0
-40
-20
0
40
20
60
80
100
120
6
5
4
3
2
VCC1 = 3.3 V
VCC1 = 5 V
1
0
140
100
50
o
Ambient Temperature ( C)
Figure 6-1. VCC1 Supply Current vs. Temperature
250
300
12
No Load
ICC2 - Supply Current (mA)
11
ICC2 - Supply Current (mA)
200
Figure 6-2. VCC1 Supply Current vs. Frequency
12
10
9
8
7
6
VCC2 = 15 V
VCC2 = 20 V
VCC2 = 30 V
5
4
-40
-20
0
40
20
60
80
100
120
11
10
9
8
VCC2 = 15 V
VCC2 = 20 V
VCC2 = 30 V
7
6
0
140
100
50
o
Ambient Temperature ( C)
250
300
0
RG = 10 W
IEH, IEL - Supply Current (mA)
fINP = 20 kHz
50
40
30
20
10
VCC2 = 15 V
VCC2 = 30 V
0
-0.1
-0.2
-0.3
-0.4
-0.5
IEH, VE - VEE = 0 V
IEH, VE - VEE = 15 V
IEL, VE - VEE = 0 V
IEL, VE - VEE = 15 V
-0.6
-0.7
-0.8
0
200
Figure 6-4. VCC2 Supply Current vs. Frequency
70
60
150
Input Frequency (KHz)
Figure 6-3. VCC2 Supply Current vs. Temperature
ICC2 - Supply Current (mA)
150
Input Frequency (KHz)
20
40
60
80
100
-40
Load Capacitance (nF)
-20
0
20
40
60
80
100
120
140
o
Ambient Temperature ( C)
Figure 6-5. VCC2 Supply Current vs. Load Capacitance
Figure 6-6. VE Supply Current vs. Temperature
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6.7 Typical Characteristics (continued)
8
IOL - Output Sink Current (A)
IOH - Output Drive Current (A)
0
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
-4
VOUT = VC - 4 V
VOUT = VC - 15 V
-4.5
-5
-40
-20
0
40
20
60
80
100
120
VOUT = 2.5 V
VOUT = 15 V
7
6
5
4
3
2
1
0
-40
140
-20
0
o
VOH - VC - High Output Voltage Drop (V)
IOF - Output Sink Current During
a Fault Condition (mA)
160
140
130
120
110
100
TA = -40oC
TA = 25oC
TA = 125oC
0
10
5
15
25
20
30
28
27.5
27
26.5
26
25.5
25
0.2
0.4
0.6
0.8
1
0.1
-0.3
-0.5
-0.7
-0.9
-1.1
IOUT = -650 mA
IOUT = -100 mA
-1.3
-1.5
-40
-20
0
20
40
60
80
100
120
140
1.2
1.4 1.5
0.35
IOUT = 100 mA
0.3
0.25
0.2
0.15
0.1
-40
-20
0
20
40
60
80
100
120
140
o
Output Drive Current (A)
Ambient Temperature ( C)
Figure 6-11. High Output Voltage vs. Output Drive Current
8
140
Figure 6-10. High Output Voltage Drop vs. Temperature
VOL - Low Output Voltage (V)
VOH - High Output Voltage (V)
28.5
0
120
o
TA = -40oC
TA = 25oC
TA = 125oC
29
100
Ambient Temperature ( C)
Figure 6-9. Output Sink Current During a Fault Condition vs.
Output Voltage
30
80
-0.1
Output Voltage (V)
29.5
60
Figure 6-8. Output Sink Current vs. Temperature
150
80
40
Ambient Temperature ( C)
Figure 6-7. Output Drive Current vs. Temperature
90
20
o
Ambient Temperature ( C)
Figure 6-12. Low Output Voltage vs. Temperature
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6.7 Typical Characteristics (continued)
-0.15
ICHG - Blanking Capacitor Charging
Current (mA)
VOL - Low Output Voltage (V)
6
5
4
3
2
TA = -40oC
TA = 25oC
TA = 125oC
1
0
0
1
0.5
1.5
-0.21
-0.23
-0.25
-0.27
-0.29
-0.31
-0.33
-0.35
-40
2.5
2
-0.17
-0.19
-20
0
20
40
60
100
80
120
140
o
Ambient Temperature ( C)
Output Sink Current (A)
Figure 6-13. Low Output Voltage vs. Output Sink Current
Figure 6-14. Blanking Capacitance Charging Current vs.
Temperature
240
7.7
230
Propagation Delay (ns)
VDSTH - Desat Threshold (V)
7.9
7.5
7.3
7.1
6.9
RG = 10 W,
CL = 10 nF
220
210
200
tPLH at VCC1 = 3.3 V
tPHL at VCC1 = 3.3 V
tPLH at VCC1 = 5 V
tPHL at VCC1 = 5 V
190
6.7
6.5
-40
-20
0
40
20
60
80
100
120
180
-40
140
-20
0
o
Ambient Temperature ( C)
60
100
80
120
140
o
Figure 6-15. DESAT Threshold vs. Temperature
Figure 6-16. Propagation Delay vs. Temperature
230
225
RG = 10 W,
225
CL = 10 nF
Propagation Delay (ns)
220
Propagation Delay (ns)
40
20
Ambient Temperature ( C)
215
210
205
tPLH
tPHL
CL = 10 nF
220
215
210
205
tPLH at VCC1 = 3.3 V
tPHL at VCC1 = 3.3 V
tPLH at VCC1 = 5 V
tPHL at VCC1 = 5 V
200
195
200
3
RG = 10 W,
3.5
4
4.5
5
5.5
190
14
VCC1 Supply Voltage (V)
16
18
20
22
24
26
28
30
VCC2 Supply Voltage (V)
Figure 6-17. Propagation Delay vs. VCC1 Supply Voltage
Figure 6-18. Propagation Delay vs. VCC2 Supply Voltage
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6.7 Typical Characteristics (continued)
1400
Propagation Delay (ns)
1200
1000
800
600
400
tPLH at VCC1 = 3.3 V
tPHL at VCC1 = 3.3 V
tPLH at VCC1 = 5 V
tPHL at VCC1 = 5 V
200
0
0
10
20
30
40
50
60
70
80
90
Desat Sense to 90% VOUT Delay (ns)
450
RG = 10 W
100
RG = 10 W,
CL = 10 nF
400
350
300
250
200
VCC2 = 15 V
VCC2 = 30 V
150
-40
-20
0
80
100
120
140
2.5
RG = 10 W
1400
Desat Sense to 10% VOUT Delay (ms)
Desat Sense to 90% VOUT Delay (ns)
60
Figure 6-20. DESAT Sense to 90% VOUT Delay vs Temperature
1600
1200
1000
800
600
400
VCC2 = 15 V
VCC2 = 30 V
200
0
0
10
20
30
40
50
70
60
80
90
100
RG = 10 W,
2
CL = 10 nF
1.5
1
0.5
VCC2 = 15 V
VCC2 = 30 V
0
-40
-20
0
20
40
60
80
100
120
140
o
Load Capacitance (nF)
Ambient Temperature ( C)
Figure 6-21. DESAT Sense to 90% VOUT Delay vs Load
Capacitance
Figure 6-22. DESAT Sense to 10% VOUT Delay vs Temperature
450
18
RG = 10 W
15
Desat Sense to Fault Low Delay (ns)
Desat Sense to 10% VOUT Delay (ms)
40
Ambient Temperature ( C)
Figure 6-19. Propagation Delay vs. Load Capacitance
14
12
10
8
6
4
VCC2 = 15 V
VCC2 = 30 V
2
0
0
10
20
30
40
50
60
70
80
90
100
400
350
300
250
200
150
-40
VCC2 = 15 V
VCC2 = 30 V
-20
0
20
40
60
80
100
120
140
o
Load Capacitance (nF)
Ambient Temperature ( C)
Figure 6-23. DESAT Sense to 10% VOUT Delay vs Load
Capacitance
10
20
o
Load Capacitance (nF)
Figure 6-24. DESAT Sense to Fault Low Delay vs Temperature
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6.7 Typical Characteristics (continued)
10
VCC2 - VEE = 30 V
R G = 0 W,
9
CL = 10 nF
8.5
8
7.5
7
VCC1 = 3 V
VCC1 = 3.3 V
VCC1 = 3.6 V
VCC1 = 4.5 V
VCC1 = 5 V
VCC1 = 5.5 V
6.5
6
5.5
5
-40
-20
0
20
40
60
80
100
120
5 V / div
Reset to Fault Delay (ms)
9.5
140
o
Ambient Temperature ( C)
Time 125 ns / div
Figure 6-26. Output Waveform
Figure 6-25. Reset to Fault Delay vs Temperature
ICH, ICL - Supply Current (mA)
3
2.5
2
1.5
ICH, IOUT = -500 mA
ICH, IOUT = -1 mA
ICL, IOUT = -1 mA
ICL, IOUT = -2 mA
1
0.5
0
-40
-20
0
20
40
60
80
100
120
140
o
Ambient Temperature ( C)
Figure 6-27. VC Supply Current vs. Temperature
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7 Parameter Measurement Information
2
3
4
5
6
7
8
1
VE 16
VIN+
5.5 V
VEE-L 15
VINVCC1
1
FAULT
6
VOUT 11
7
VEE-L 10
NC
GND1
8
VEE-P 9
5V
2
3
4
5
6
7
8
VIN-
VEE-L
VCC1
GND1
DESAT
VCC2
15
14
12
RESET
VC
FAULT
VOUT
NC
VEE-L 10
GND1
VEE-P
1
VIN+
VE
2
VIN-
VEE-L
3
VCC1
4
GND1
5
RESET
VC
6
FAULT
VOUT
7
NC
VEE-L
8
GND1
VEE-P
ICC2
5V
0.1
µF
2
3
4
5
6
7
8
VIN+
VE
VIN-
VEE-L
VCC1
GND1
DESAT
VCC2
RESET
VC
FAULT
VOUT
NC
VEE-L
GND1
VEE-P
VCC2
30 V
11
0.1
µF
IOUT
9
1
16
15
14
0.1
µF
5.5 V
0.1
µF
13
4
0.1
µF
5
12
11 VOUT
2
3
V1
Sweep
0.1
µF
VEE-L 15
DESAT 14
VCC2 13
RESET
VC 12
FAULT
VOUT 11
NC
VEE-L 10
GND1
VEE-P 9
16
15
14
ICC2
13
IC
12
11
0.1
µF
30 V
10
9
Figure 7-4. ICC2L, ICL Test Circuit
V2
5.5 V
6
IFAULT
10
7
9
8
Figure 7-5. VIT(UVLO) Test Circuit
12
DESAT
IC
Figure 7-3. ICC2H, ICH Test Circuit
1
VIN-
Figure 7-2. ICC1L Test Circuit
16
13
VE 16
GND1
5
VC 12
VIN+
VCC1
4
VCC2 13
RESET
VE
2
DESAT 14
GND1
VIN+
0.1
µF
3
Figure 7-1. ICC1H Test Circuit
0.1
µF
ICC1
5.5 V
ICC1
1
0.1
µF
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VIN+
VE
VIN-
VEE-L
DESAT
VCC1
GND1
VCC2
RESET
VC
FAULT
VOUT
NC
VEE-L
GND1
VEE-P
16
15
14
13
12
11
30 V
0.1
µF
10
9
Figure 7-6. IFH Test Circuit
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1
0.1
µF
3V
2
3
4
5
0.4 V
6
IFAULT
7
8
VE
VIN+
VIN-
VEE-L
DESAT
VCC1
GND1
VCC2
RESET
VC
FAULT
16
15
NC
VEE-L
GND1
VEE-P
5V
3
13
4
12
5
30 V
10
7
9
8
VE
VIN+
VEE-L
2
VIN-
3
VCC1
4
GND1
5
RESET
DESAT
VCC2
VC
5V
0.1
µF
0.1
µF
30 V
8
GND1
VEE-P
VPULSE
4.7
µF
4
5
6
7
8
VEE-L
GND1
5V
0.1
µF
2
3
DESAT
VCC2
RESET
VC
FAULT
VOUT
NC
VEE-L
GND1
VEE-P
4
5
6
7
8
VIN+
VE
VIN-
VEE-L
VCC1
GND1
RESET
VEE-P
16
2
1
15
5V
0.1
µF
14
13
4
0.1
µF
VOUT
5
30 V
11
6
10
7
IOUT
9
DESAT
VCC2
VC
FAULT
VOUT
NC
VEE-L
GND1
VEE-P
16
2
3
12
8
1
0.1
µF
5V
0.1
µF
14
2
3
V1
13
0.1
µF
12
11
15
14
13
VPULSE
12
30 V
11
10
0.1
µF
4.7
µF
IOUT
9
VIN+
VE
VIN-
VEE-L
VCC1
GND1
RESET
DESAT
VCC2
VC
FAULT
VOUT
NC
VEE-L
GND1
VEE-P
16
15
14
13
0.1
µF
12
IOUT
11
30 V
14 V
10
9
4
5
0.1
µF
VIN+
VE
VIN-
VEE-L
VCC1
GND1
DESAT
VCC2
RESET
VC
FAULT
VOUT
NC
VEE-L
GND1
VEE-P
16
15
14
13
100
mA
12
0.1
µF
30 V
11
VOUT
10
9
Figure 7-12. VOL Test Circuit
IE
15
16
Figure 7-10. IOF Test Circuit
Figure 7-11. VOH Test Circuit
1
GND1
8
VINVCC1
VEE-L
7
9
VE
VC
NC
6
IOUT
VIN+
VCC2
VOUT
5
12
11
DESAT
FAULT
4
NC
3
RESET
13
7
2
GND1
3
VEE-L 10
0.1
µF
VEE-L
14
Figure 7-9. IOL Test Circuit
5V
VIN-
1
15
VOUT
1
VE
Figure 7-8. IOH Test Circuit
16
FAULT
6
VIN+
VCC1
6
0.1
µF
Figure 7-7. IFL Test Circuit
1
2
14
11
VOUT
1
0.1
µF
V2
6
10
7
9
8
Figure 7-13. IEH Test Circuit
VIN+
VE
VIN-
VEE-L
VCC1
GND1
DESAT
VCC2
RESET
VC
FAULT
VOUT
NC
VEE-L
GND1
VEE-P
16
15
IE
0.1
µF
14
V1
13
0.1
µF
12
11
0.1
µF
V2
10
9
Figure 7-14. IEL Test Circuit
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1
5V
0.1
µF
2
3
4
5
6
7
8
VE
VIN+
VIN-
VEE-L
DESAT
VCC1
GND1
VCC2
RESET
VC
FAULT
VOUT
NC
VEE-L
GND1
VEE-P
1
16
15
SWEEP
0.1
µF
5V
0.1
µF
2
3
14
13
V1
IDESAT
4
0.1
µF
12
5
3k
VE
VIN-
VEE-L
DESAT
VCC1
GND1
VCC2
RESET
VC
FAULT
VOUT
NC
VEE-L
V2
0.1
µF
11
VIN+
6
SCOPE
7
10
100 pF
8
9
GND1
Figure 7-15. ICHG, IDSCHG, VDSTH Test Circuit
VEE-P
16
15
14
13
12
0.1
µF
11
10
9
4.7
µF
30 V
4.7
µF
30 V
10 W
10
nF
VCM
Figure 7-16. CMTI VFH Test Circuit
1
5V
0.1
µF
2
3
4
5
3k
6
SCOPE
7
100 pF
8
VIN+
VE
VIN-
VEE-L
DESAT
VCC1
GND1
VCC2
RESET
VC
FAULT
VOUT
NC
VEE-L
GND1
VEE-P
1
16
15
5V
0.1
µF
2
14
3
13
4
12
5
3k
0.1
µF
11
10
9
4.7
µF
30 V
6
7
100 pF
10 W
8
10
nF
VIN+
VE
VIN-
VEE-L
GND1
1
5V
2
3
4
3k
5
6
100 pF
7
8
VE
VIN-
VEE-L
DESAT
GND1
VCC2
RESET
FAULT
VC
VOUT
VEE-L
NC
GND1
VC
FAULT
VOUT
NC
VEE-L
GND1
VEE-P
15
14
13
12
SCOPE
0.1
µF
11
10
9
10 W
10
nF
VCM
VIN+
VCC1
VCC2
RESET
VCM
Figure 7-17. CMTI VFL Test Circuit
0.1
µF
DESAT
VCC1
16
VEE-P
Figure 7-18. CMTI VOH Test Circuit
16
1
VIN
15
2
GND1
14
3
13
4
12
5V
SCOPE
0.1
µF
11
10
9
4.7
µF
30 V
0.1
µF
5
3k
6
7
10 W
8
10
nF
VIN+
VE
VIN-
VEE-L
VCC1
GND1
RESET
DESAT
VCC2
VC
FAULT
VOUT
NC
VEE-L
GND1
VEE-P
16
15
14
13
12
VOUT
V1
0.1
µF
4.7
µF
11
10
9
10 W
10
nF
Figure 7-20. tPLH, tPHL, tr, tf Test Circuit
VCM
Figure 7-19. CMTI VOL Test Circuit
14
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1
VIN
2
3
4
5
6
5V
3k
0.1
µF
7
8
VIN+
VE
VIN-
VEE-L
VCC1
GND1
DESAT
VCC2
RESET
VC
FAULT
VOUT
NC
VEE-L
GND1
VEE-P
16
15
100
pF
0V
VIN+
50 %
0.1
µF
14
0.1
µF
V1
DESAT
13
VIN-
50 %
tr
12
tf
VOUT
0.1
µF
4.7
µF
V2
90%
11
10
10 W
50%
10
nF
9
VOUT
Figure 7-21. tDESAT, tRESET Test Circuit
10%
tPLH
tPHL
Figure 7-22. VOUT Propagation Delay, Non-inverting
Configuration
VIN-
tDESAT (FAULT )
tDESAT (10%)
50 %
50 %
7.2V
VDESAT
VIN+
VCC1
tDESAT (LOW)
50%
tDESAT (90%)
tr
VOUT
tf
90%
10%
90%
FAULT
50 %
50 %
tRESET (FAULT )
50%
VOUT
10%
tPLH
RESET
50%
Figure 7-24. DESAT, VOUT, FAULT, RESET Delays
tPHL
Figure 7-23. VOUT Propagation Delay, Inverting
Configuration
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8 Detailed Description
8.1 Overview
The ISO5500 is an isolated gate driver for IGBTs and MOSFETs with power ratings of up to IC = 150 A and VCE
= 600 V. Input TTL logic and output power stage are separated by a capacitive, silicon dioxide (SiO2), isolation
barrier.
The IO circuitry on the input side interfaces with a micro controller and consists of gate drive control and RESET
inputs, and FAULT alarm output. The power stage consists of power transistors to supply 2.5 A pullup and
pulldown currents to drive the capacitive load of the external power transistors, as well as DESAT detection
circuitry to monitor IGBT collector-emitter overvoltage under short circuit events. The capacitive isolation core
consists of transmit circuitry to couple signals across the capacitive isolation barrier, and receive circuitry to
convert the resulting low-swing signals into CMOS levels. The ISO5500 also contains undervoltage lockout
circuitry to prevent insufficient gate drive to the external IGBT, and soft turnoff feature which ensures graceful
reduction in IGBT current to zero when a short-circuit is detected.
8.2 Functional Block Diagram
ISO5500
VREG
VCC1
VCC2
-
VIN+
UVLO
+
ISO - Barri er
V INDELAY
FAULT
Gate
Drive
VC
DESAT
+
DESAT
-
12 .3V
and
7.2 V
Fault
Logic
Q1b
Q1a
Q4
VOUT
Q S
VE
R
RESET
Q3
Q2b
Q2a
VEE-P
GND1
VEE-L
16
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8.3 Feature Description
Table 8-1. Package Characteristics
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
L(I01)
Minimum air gap (clearance(2))
Shortest terminal to terminal distance
through air
8.3
mm
L(I02)
Minimum external tracking (creepage(2))
Shortest terminal to terminal distance
across the package surface
8.1
mm
Minimum internal gap (internal clearance)
Distance through the insulation
0.012
mm
CTI
Tracking resistance (comparative tracking index) DIN IEC 60112 / VDE 0303 Part 1
400
V(1)
RIO
Isolation resistance
Input to output, VIO = 500
CIO
Barrier capacitance input-to-output
VIO = 0.4 sin (2πft), f = 1 MHz(1)
CI
Input capacitance to ground
VI = VCC/2 + 0.4 sin (2π ft), f = 2 MHz,
VCC = 5V
(1)
(2)
V
>1012
Ω
1.25
pF
2
pF
All pins on each side of the barrier tied together creating a two-terminal device
Creepage and clearance requirements should be applied according to the specific equipment isolation standards of an application.
Care should be taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the
isolator on the printed circuit board do not reduce this distance.space
Creepage and clearance on a printed circuit board become equal according to the measurement techniques shown in the isolation
glossary. Techniques such as inserting grooves and/or ribs on a printed circuit board are used to help increase their specification.
8.3.1 Insulation Characteristics for DW-16 Package
Over recommended operating conditions (unless noted otherwise)
PARAMETER
VIORM
VPR
TEST CONDITIONS
SPECIFICATION
Maximum working insulation voltage per DIN
VDE V 0884-11
Input to output test voltage per DIN VDE V
0884-11
VIOTM
Transient overvoltage per DIN VDE V
0884-11
VISO
Isolation voltage per UL 1577
RS
Insulation resistance
UNIT
679/480
After Input/Output safety test subgroup 2/3,
VPR = 1.2 x VIORM, t = 10 s,
Partial discharge < 5 pC
816/576
Method a, After environmental tests subgroup 1,
VPR = 1.6 × VIORM, t = 10 s (qualification)
Partial discharge < 5 pC
1088/768
Method b1, 100% Production test,
VPR = 1.875 × VIORM, t = 1 sec
Partial discharge < 5 pC
1275/900
VTEST = VIOTM, t = 60 sec (qualification), t = 1 s
(100% production)
4000/2828
VTEST = VISO, t = 60 s (qualification)
VTEST = 1.2 × VISO, t = 1 s (100% production)
VIO = 500 V at TS = 150°C
VPEAK/
VRMS
3535/2500
> 109
Pollution degree
Ω
2
8.3.2 Regulatory Information
VDE
Certified according to DIN VDE V
0884-11:2017-01
Basic Insulation
Maximum Transient Overvoltage, 4000 VPK
Maximum Working Voltage, 680 VPK
Certificate Number: 40047657
CSA
UL
Approved under CSA
Recognized under UL 1577
CSA 62368-1:19, CSA 61010-1-12, UPD1:
2015, UPD2: 2016, AMD1: 2018
Component Acceptance Notice 5A,
Component Recognition Program, Single
Protection, 2500 VRMS
Master Contract Number: 220991, Certificate File Number: E181974
Number: 2559124
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8.3.3 IEC 60664-1 Rating Table
PARAMETER
TEST CONDITIONS
Basic Isolation Group
SPECIFICATION
Material Group
Installation Classification
II
Rated Mains Voltage ≤ 300 VRMS
I-IV
Rated Mains Voltage ≤ 600 VRMS
I-III
8.3.4 Isolation Lifetime at a Maximum Continuous Working Voltage
PARAMETER
Bipolar AC Voltage
LIFETIME
SPECIFICATION
20 years
679/480
25 years
657/465
50 years
601/425
UNIT
VPEAK/VRMS
8.3.5 Safety Limiting Values
Safety limiting intends to prevent potential damage to the isolation barrier upon failure of input or output circuitry.
A failure of the I/O can allow low resistance to ground or the supply and, without current limiting, dissipate
sufficient power to overheat the die and damage the isolation barrier, potentially leading to secondary system
failures.
PARAMETER
IS
Safety Limiting Current
TS
Case Temperature
TEST CONDITIONS
MIN
TYP
MAX
θJA = 76°C/W, VI = 3.6 V, TJ = 170°C, TA = 25°C
530
θJA = 76°C/W, VI = 5.5 V, TJ = 170°C, TA = 25°C
347
θJA = 76°C/W, VI = 30 V, TJ = 170°C, TA = 25°C
UNIT
mA
64
150
°C
Safety Limiting Current - mA
The safety-limiting constraint is the absolute-maximum junction temperature specified in the Section 6.1 table.
The power dissipation and junction-to-air thermal impedance of the device installed in the application hardware
determines the junction temperature. The assumed junction-to-air thermal resistance in the Section 6.4 table
is that of a device installed in the High-K Test Board for Leaded Surface-Mount Packages. The power is
the recommended maximum input voltage times the current. The junction temperature is then the ambient
temperature plus the power times the junction-to-air thermal resistance.
600
500
VCC1 = 3.6V
400
300
VCC1 = 5.5V
200
VCC2 - VEE-P = 30 V
100
0
0
50
100
150
200
Case Temperature - oC
Figure 8-1. DW-16 θJC Thermal Derating Curve per DIN V VDE V 0884-10 (VDE V 0884-10)
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8.3.6 Behavioral Model
Figure 8-2 and Figure 8-3 show the detailed behavioral model of the ISO5500 for a non-inverting input
configuration and its corresponding timing diagram for normal operation, fault condition, and Reset.
+HV
ISO5500
DESAT
+
1 VIN+
PWM
DIS
-
ISO
CBLK
7.2V
270 μA
2 VIN-
3 VCC1
DELAY
3.3V
to
5V
VCC2
-
UVLO
ISO - Barrie r
μC
+
13
VREG
12.3V
VC 12
Q1b
15V
Q1a
VOUT 11
6 FAULT
I/P
14
FAULT
Q S
O/P
VE
R
16
Q3
Q2b
4,8 GND1
VREG
Q2a
15V
VEE-P
VCC2
LOAD
5 RESET
9
VEE-L 10,15
-HV
Figure 8-2. ISO5500 Behavioral Model
Normal Operation
Fault Condition
Reset
VIN+
Normal Operation
5
ISO
4
VDESAT
7.2V
VOUT
FAULT
3
lay
De
2
DIS
1
FAULT
RESET
6
Figure 8-3. Complete Timing Diagram
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8.3.7 Power Supplies
VCC1 and GND1 are the power supply input and output for the input side of the ISO5500. The supply voltage at
VCC1 can range from 3 V up to 5.5 V with respect to GND1, thus supporting the direct interface to state-of-the-art
3.3 V low-power controllers as well as legacy 5 V controllers.
VCC2, VEE-P and VEE-L are the power supply input and supply returns for the output side of the ISO5500. VEE-P
is the supply return for the output driver and VEE-L is the return for the logic circuitry. With VEE-P as the main
reference potential, VEE-L should always be directly connected to VEE-P. The supply voltage at VCC2 can range
from 15 V up to 30 V with respect to VEE-P.
A third voltage input, VE, serves as reference voltage input for the internal UVLO and DESAT comparators.
VE also represents the common return path for the gate voltage of the external power device. The ISO5500
is designed for driving MOSFETs and IGBTs. Because MOSFETs do not require a negative gate-voltage, the
voltage potential at VE with respect to VEE-P can range from 0 V for MOSFETs and up to 15 V for IGBTs.
ISO5500
ISO5500
VCC2
VCC1
VCC2
+15 V
15V
VC
VCC1
+15 V
VC
15 V-30 V
3 V - 5.5 V
Power Device
Common
VE
0 V-15 V
GND1
ISOLATION
GND1
ISOLATION
3 V - 5.5 V
Power Device
Common
VE
0 V-15 V
-15 V
0-(-15 V)
VEE-P
VEE-P
VEE-L
VEE-L
Figure 8-4. Power Supply Configurations
The output supply configuration on the left uses symmetrical ±15 V supplies for VCC2 and VEE-P with respect
to VE. This configuration is mostly applied when deriving the output supply from the input supply via an
isolated DC-DC converter with symmetrical voltage outputs. The configuration on the right, having both supplies
referenced to VEE-P, is found in applications where the device output supply is derived from the high-voltage
IGBT supplies.
8.3.8 Control Signal Inputs
The two digital, TTL control inputs, VIN+ and VIN–, allow for inverting and non-inverting control of the gate driver
output. In the non-inverting configuration VIN+ receives the control input signal and VIN– is connected to GND1. In
the inverting configuration VIN– is the control input while VIN+ is connected to VCC1.
ISO5500
ISO5500
3 V - 5.5 V
VCC1
PWM
VIN+
VIN+
VCC1
VIN+
VCC1
3 V - 5.5 V
GND1
GND1
VIN+
PWM
VIN-
ISOLATION
VIN-
ISOLATION
VINVIN-
GND1
VOUT
VOUT
Figure 8-5. Non-inverting (left) and Inverting (right) Input Configurations
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8.3.9 Output Stage
The output stage provides the actual IGBT gate drive by switching the output voltage pin, VOUT, between the
most positive potential, typically VCC2, and the most negative potential, VEE-P.
VCC2
ISO5500
VC
VIN+
Q1b
15V
Q1a
30V
On
VOUT
VOUT
Gate
Drive
Q2
Q1
0V
VGE
Off
Q3
Q2
VE
Q3
Slow
Off
Q1
Q2b
+15V
Q2a
15V
VE
VEE-P
VE
VGE
-15V
VEE-L
Figure 8-6. Output Stage Design and Timing
This stage consists of an upper transistor pair (Q1a and Q1b) turning the IGBT on, and a lower transistor pair
(Q2a and Q2b) turning the IGBT off. Each transistor pair possesses a bipolar transistor for high current drive and
a MOSFET for close-to-rail switching capability.
An additional, weak MOSFET (Q3) is used to softly turn-off the IGBT in the event of a short circuit fault to
prevent large di/dt voltage transients which potentially could damage the output circuitry.
The output control signals, On, Off, and Slow-Off are provided by the gate-drive and fault-logic circuit which also
includes a break-before-make function to prevent both transistor pairs from conducting at the same time.
By introducing the reference potential for the IGBT emitter, VE, the final IGBT gate voltage, VGE, assumes
positive and negative values with respect to VE.
A positive VGE of typically 15 V is required to switch the IGBT well into saturation while assuring the survival of
short circuit currents of up to 5–10 times the rated collector current over a time span of up to 10 μs.
Negative values of VE, ranging from a required minimum of –5 V up to a recommended –15 V, are necessary
to keep the IGBT turned off and to prevent it from unintentional conducting due to noise transients, particularly
during short circuit faults. As previously mentioned, MOSFETs do not require a negative gate-voltage and thus
allow the VE-pin to be directly connected to VEE-P.
The timing diagram in Figure 8-6 shows that during normal operation VOUT follows the switching sequence of
VIN+ (here shown for the non-inverting input configuration), and only the Q1 and Q2 transistor pairs applying
VCC2 and VEE-P potential to the VOUT-pin respectively.
In the event of a short circuit fault, however, while the IGBT is actively driven, the Q1 pair is turned off and Q3
turns on to slowly reduce VOUT in a controlled manner down to a level of approximately 2 V above VEE-P. At this
voltage level, the strong Q2 pair then conducts holding VOUT at VEE-P potential.
8.3.10 Undervoltage Lockout (UVLO)
The Under Voltage Lockout feature prevents the application of insufficient gate voltage (VGE-ON) to the power
device by forcing VOUT low (VOUT = VEE-P) during power-up and whenever else VCC2 – VE drops below 12.3 V.
IGBTs and MOSFETs typically require gate voltages of VGE = 15 V to achieve their rated, low saturation voltage,
VCES. At gate voltages below 13 V typically, their VCE-ON increases drastically, especially at higher collector
currents. At even lower voltages, i.e. VGE < 10 V, an IGBT starts operating in the linear region and quickly
overheats. Figure 8-7 shows the principle operation of the UVLO feature.
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VCC2
VCC2
-
UVLO
On
11.1V
2V
VC
+
12.3V
15V
VIN+
Gate
Drive
12.3V
Q1b
Q1a
VOUT
VGE
VOUT
VE
Failsafe
Low
Q1
Q2
Q1
Q2
Q1
0V
R PD Q2
Off
Q2b
ISO5500
15V
Q2a
VE
VEE-P
+15V
VE
VGE
VEE-L
-15V
Figure 8-7. Undervoltage Lockout (UVLO) Function
Because VCC2 with respect to VE represents the gate-on voltage, VGE-ON = VCC2 – VE, the UVLO comparator
compares VCC2 to a 12.3 V reference voltage that is also referenced to VE via the connection of the ISO5500
VE-pin to the emitter potential of the power device.
The comparator hysteresis is 1.2 V typical and the typical values for the positive and negative going input
threshold voltages are VTH+ = 12.3 V and VTH– = 11.1 V.
The timing diagram shows that at VCC2 levels below 2 V VOUT is 0 V. Because none of the internal circuitry
operates at such low supply levels, an internal 100 kΩ pull-down resistor is used to pull VOUT down to VEE-P
potential. This initial weak clamping, known as failsafe-low output, strengthens with rising VCC2. Above 2 V the
Q2-pair starts conducting gradually until VCC2 reaches 12.3 V at which point the logic states of the control inputs
VIN+ and VIN– begin to determine the state of VOUT.
Another UVLO event takes place should VCC2 drop slightly below 11 V while the IGBT is actively driven. At
that moment the UVLO comparator output causes the gate-drive logic to turn off Q1 and turn on Q2. Now
VOUT is clamped hard to VEE-P. This condition remains until VCC2 returns to above 12.3 V and normal operation
commences.
Note
An Undervoltage Lockout does not indicate a Fault condition.
8.3.11 Desaturation Fault Detection (DESAT)
The DESAT fault detection prevents IGBT destruction due to excessive collector currents during a short circuit
fault. Short circuits caused by user misconnect, bad wiring, or overload conditions induced by the load can cause
a rapid increase in IGBT current, leading to excessive power dissipation and heating. IGBTs become damaged
when the current load approaches the saturation current of the device and the collector-emitter voltage, VCE,
rises above the saturation voltage level, VCE-sat. The drastically increased power dissipation overheats and
destroys the IGBT.
To prevent damage to IGBT applications, the implemented fault detection slowly reduces the overcurrent in a
controlled manner during the fault condition.
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VCC2
VC
ISO5500
15V
DESAT
+
VIN+
DESAT
-
CBLK
On
Gate
Drive
7.2V
VDESAT
Q4
Q1a
Q1b
VOUT
Dschg
7.2V
VCE
Q4
VOUT
VE
Fault Off
Slow
Off
Q3
Q2b
15V
Q2a
Fault
VEE-P
VEE-L
Figure 8-8. DESAT Fault Detection and Protection
The DESAT fault detection involves a comparator that monitors the IGBT’s VCE and compares it to an internal
7.2 V reference. If VCE exceeds this reference voltage, the comparator causes the gate-drive and fault-logic to
initiate a fault shutdown sequence. This sequence starts with the immediate generation of a fault signal, which is
transmitted across the isolation barrier towards the Fault indicator circuit at the input side of the ISO5500.
At the same time the fault logic turns off the power-pair Q1 and turns on the small discharge MOSFETs, Q3 and
Q4. Q3 slowly discharges the IGBT gate voltage which causes the high short-circuit current through the IGBT
to gradually decrease, thereby preventing large di/dt induced voltage transients. Q4 discharges the blanking
capacitor. Once VOUT is sufficiently close to VEE-P potential (at approximately 2 V), the large Q2-pair turns on in
addition to Q3 to clamp the IGBT gate to VEE-P.
Note
The DESAT detection circuit is only active when the IGBT is turned on. When the IGBT is turned off,
and its VCE is at maximum, the fault detection is simply disabled to prevent false triggering of fault
signals.
8.3.12 DESAT Blanking Time
The DESAT fault detection must remain disabled for a short time period following the turn-on of the IGBT to
allow its collector voltage to drop below the 7.2 V DESAT threshold. This time period, called the DESAT blanking
time, tBLK, is controlled by an internal charge current of ICHG = 270 μA, the 7.2 V DESAT threshold, VDSTH, and
an external blanking capacitor, CBLK.
The nominal blanking time with a recommended capacitor value of CBLK = 100 pF is calculated with:
tBL K =
CBL K ´ VDSTH
ICHG
=
100 pF ´ 7.2 V
270 μA
= 2.7 μ s
(1)
The capacitor value can be scaled slightly to adjust the blanking time. However, because the blanking capacitor
and the DESAT diode capacitance build a voltage divider that attenuates large voltage transients at DESAT,
CBLK values smaller than 100 pF are not recommended. The nominal blanking time also represents the ISO5500
maximum response time to a DESAT fault condition.
If a short circuit condition exists prior to the turn-on of the IGBT, (causing the IGBT switching into a short) the soft
shutdown sequence begins after approximately 3 μs. However, if a short circuit condition occurs while the IGBT
is already on, the response time is significantly shorter due to the parasitic parallel capacitance of the DESAT
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diode. The recommended value of 100 pF however, provides sufficient blanking and fault response times for
most applications.
The timing diagram in Figure 8-8 shows the DESAT function for both, normal operation and a short-circuit fault
condition. The use of VIN+ as control input implies non-inverting input configuration.
During normal operation VDESAT will display a small sawtooth waveform every time VIN+ goes high. The ramp of
the sawtooth is caused by the internal current source charging the blanking capacitor. Once the IGBT collector
has sufficiently dropped below the capacitor voltage, the DESAT diode conducts and discharges CBLK through
the IGBT.
In the event of a short circuit fault; however, high IGBT collector voltage prevents the diode from conducting and
the voltage at the blanking capacitor continues to rise until it reaches the DESAT threshold. When the output of
the DESAT comparator goes high, the gate-drive and fault-logic circuit initiates the soft shutdown sequence and
also produces a Fault signal that is fed back to the input side of the ISO5500.
8.3.13 FAULT Alarm
The Fault alarm unit consists of three circuit elements, a RS flip-flop to store the fault signal received from the
gate-drive and fault-logic, an open-drain MOSFET output signaling the fault condition to the micro controller, and
a delay circuit blocking the control inputs after the soft shutdown sequence of the IGBT has been completed.
Figure 8-9 shows the ISO5500 in a non-inverting input configuration. Because the FAULT-pin is an open-drain
output, it requires a pull-up resistor, RPU, in the order of 3.3 kΩ to 10 kΩ. The internal signals DIS, ISO, and
FAULT represent the input-disable signal, the isolator output signal, and the fault feedback signal respectively.
VCC1
3.3V
ISO5500
VIN+
DIS
ISO
ISO
ISO - Barrier
VINRPU
FAULT
Q S
Sh
oc ort
cu
rs
4
FAULT
3
lay
De
DELAY
I/P
5
VIN+
PWM
µC
“IGBT
On”
2
1
DIS
FAULT
R
O/P
FAULT
RESET
GND1
RESET
6
Figure 8-9. Fault Alarm Circuitry and Timing Sequence
The timing diagram shows that the micro controller initiates an IGBT-on command by taking VIN+ high. After
propagating across the isolation barrier ISO goes high, activating the output stage.
1. Upon a short circuit condition the gate-drive and fault-logic feeds back a fault signal (FAULT = high) which
sets the RS-FF driving the FAULT output active-low.
2. After a delay of approximately 3 μs, the time required to shutdown the IGBT, DIS becomes high and blocks
the control inputs
3. This in turn drives ISO low
4. which, after propagating through the output fault-logic, drives FAULT low.
At this time both flip-flop inputs are low and the fault signal is stored.
5. Once the failure cause has been removed the micro controller must set the control inputs into an "Outputlow" state before applying the Reset pulse.
6. Taking the RESET-input low resets the flip-flop, which removes the fault signal from the controller by pulling
FAULT high and releases the control inputs by driving DIS low
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8.4 Device Functional Modes
Table 8-2. Function Table
VIN+
VIN-
UVLO
(VCC2 – VE)
DESAT DETECTED ON
PIN 14 (DESAT)
PIN 6 ( FAULT)
OUTPUT
VOUT
X
X
Active
X
X
Low
X
X
X
Yes
Low
Low
Low
X
X
X
X
Low
X
High
X
X
X
Low
High
Low
Not active
No
High
High
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9 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification, and
TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes. Customers should validate and test their design
implementation to confirm system functionality.
9.1 Application Information
The ISO5500 is an isolated gate driver for high power devices such as IGBTs and MOSFETs with power ratings
of up to IC = 150 A and VCE = 600 V. It is intended for use in applications such as motor control, industrial
inverters and switched-mode power supplies. In these applications, sophisticated PWM control signals are
required to turn the power-devices on and off, which at the system level eventually may determine, for example,
the speed, position, and torque of the motor or the output voltage, frequency and phase of the inverter. These
control signals are usually the outputs of a micro controller, and are at low voltage levels such as 3.3 V or 5.0
V. The gate controls required by the MOSFETs and IGBTs, on the other hand, are in the range of 15 V to 30 V,
and need high current capability to be able to drive the large capacitive loads offered by those power transistors.
Not only that, the gate drive needs to be applied with reference to the Emitter of the IGBT (Source for MOSFET),
and by construction, the Emitter node in a gate drive system swings between 0 to the DC bus voltage, which is
several 100s of volts in magnitude.
The ISO5500 is thus used to level shift the incoming 3.3-V and 5.0-V control signals from the microcontroller to
the 15-V to 30-V drive required by the power transistors while ensuring high-voltage isolation between the driver
side and the microcontroller side.
9.2 Typical Application
Figure 9-1 shows the typical application of a three-phase inverter using six ISO5500 isolated gate drivers.
Three-phase inverters are used for variable-frequency drives to control the operating speed of AC motors and for
high power applications such as High-Voltage DC (HVDC) power transmission.
The basic three-phase inverter consists of three single-phase inverter switches each comprising two ISO5500
devices that are connected to one of the three load terminals. The operation of the three switches is coordinated
so that one switch operates at each 60 degree point of the fundamental output waveform, thus creating a
six-step line-to-line output waveform. In this type of applications carrier-based PWM techniques are applied to
retain waveform envelope and cancel harmonics.
ISOLATION BARRIER
PWM
3-PHASE
INPUT
1
2
3
4
5
6
ISO
5500
ISO
5500
ISO
5500
ISO
5500
ISO
5500
ISO
5500
µC
M
FAULT
Figure 9-1. Typical Motor Drive Application
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9.2.1 Design Requirements
Unlike optocoupler based gate drivers which need external current drivers and biasing circuitry to provide the
input control signals, the input control to the ISO5500 is TTL and can be directly driven by the microcontroller.
Other design requirements include decoupling capacitors on the input and output supplies, a pullup resistor on
the common drain FAULT output signal, and a high-voltage protection diode between the IGBT collector and the
DESAT input. Further details are explained in the subsequent sections.
9.2.2 Detailed Design Procedure
9.2.2.1 Recommended ISO5500 Application Circuit
The ISO5500 has both, inverting and non-inverting gate control inputs, an active low reset input, and an
open drain fault output suitable for wired-OR applications. The recommended application circuit in Figure 9-2
illustrates a typical gate drive implementation using the ISO5500.
The four 0.1 μF supply bypass capacitors provide the large transient currents necessary during a switching
transition. Because of the transient nature of the charging currents, low current (20 mA) power supplies for VCC2
and VEE-P suffice. The 100 pF blanking capacitor disables DESAT detection during the off-to-on transition of the
power device. The DESAT diode and its 100 Ω series resistor are important external protection components
for the fault detection circuitry. The 10 Ω gate resistor limits the gate charge current and indirectly controls the
IGBT collector voltage rise and fall times. The open-drain fault output has a passive 3.3 kΩ pull-up resistor and a
330pF filtering capacitor. In this application, the IGBT gate driver will shut down when a fault is detected and will
not resume switching until the micro-controller applies a reset signal.
1
2
3
μC
3.3V
3.3
kΩ
0.1
μF
4
5
6
330 pF
7
8
V IN+
ISO5500
V IN-
VE
VEE -L
DESAT
V CC1
GND1
V CC2
RESET
VC
FAULT
VOUT
NC
VEE -L
GND1
V EE-P
16
15
100 0.1
pF μF
0.1
μF
DS (opt.)
100 Ω
14
D DESAT
+
13
12
Q1
4.7
μF
+
15V
VCE
Rg
11
10
VF
-
0.1
μF
15V
Q2
3-PHASE
OUTPUT
+
9
VCE
-
Figure 9-2. Recommended Application Circuit
9.2.2.2 FAULT Pin Circuitry
The FAULT pin is an open-drain output requiring a 3.3 kΩ pull-up resistor to provide logic high when FAULT is
inactive.
Because fast common mode transients can alter the FAULT-pin voltage during high state, a 330 pF capacitor
connected between FAULT and GND1 is recommended to provide sufficient noise margin at the specified CMTI
of 50 kV/μs. The added capacitance does not increase the FAULT response time during a fault condition.
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1
2
3
5V
µC
3.3
kW
0.1
µF
4
5
6
330 pF
7
8
ISO5500
VIN+
VINVCC1
GND1
RESET
FAULT
NC
GND1
Figure 9-3. FAULT Pin Circuitry for High CMTI
9.2.2.3 Driving the Control Inputs
The amount of common-mode transient immunity (CMTI) is primarily determined by the capacitive coupling from
the high-voltage output circuit to the low-voltage input side of the ISO5500. For maximum CMTI performance,
the digital control inputs, VIN+ and VIN–, must be actively driven by standard CMOS or TTL, push-pull drive
circuits. This type of low-impedance signal source provides active drive signals that prevent unwanted switching
of the ISO5500 output under extreme common-mode transient conditions. Passive drive circuits, such as opendrain configurations using pull-up resistors, must be avoided.
9.2.2.4 Local Shutdown and Reset
In applications with local shutdown and reset, the FAULT output of each gate driver is polled separately, and the
individual reset lines are asserted low independently to reset the motor controller after a fault condition.
1
2
3
µC
RF
4
5
6
7
8
VIN+
1
ISO5500
2
VIN-
3
VCC1
µC
GND1
RF
4
5
RESET
6
FAULT
7
NC
8
GND1
VIN+
ISO5500
VINVCC1
GND1
RESET
FAULT
NC
GND1
Figure 9-4. Local Shutdown and Reset for Noninverting (left) and Inverting Input Configuration (right)
9.2.2.5 Global-Shutdown and Reset
When configured for inverting operation, the ISO5500 can be configured to shutdown automatically in the event
of a fault condition by tying the FAULT output to VIN+. For high reliability drives, the open drain FAULT outputs of
multiple ISO5500 devices can be wired together forming a single, common fault bus for interfacing directly to the
micro-controller. When any of the six gate drivers of a three-phase inverter detects a fault, the active low FAULT
output disables all six gate drivers simultaneously; thereby, providing protection against further catastrophic
failures.
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1
2
3
µC
4
5
6
7
8
to other
RESETs
to other
FAULTs
VIN+
ISO5500
VINVCC1
GND1
RESET
FAULT
NC
GND1
Figure 9-5. Global Shutdown with Inverting Input Configuration
9.2.2.6 Auto-Reset
Connecting RESET to the active control input (VIN+ for non-inverting, or VIN– for inverting operation) configures
the ISO5500 for automatic reset capability. In this case, the gate control signal at VIN is also applied to the
RESET input to reset the fault latch every switching cycle. During normal IGBT operation, asserting RESET low
has no effect on the output. For a fault condition, however, the gate driver remains in the latched fault state until
the gate control signal changes to the 'gate low' state and resets the fault latch.
If the gate control signal is a continuous PWM signal, the fault latch will always be reset before VIN+ goes high
again. This configuration protects the IGBT on a cycle by cycle basis and automatically resets before the next
'on' cycle. When the ISO5500 is configured for Auto Reset, the specified minimum FAULT signal pulse width is
3 μs.
1
2
3
µC
4
5
6
7
8
VIN+
1
ISO5500
2
VIN-
3
VCC1
µC
GND1
4
5
RESET
6
FAULT
7
NC
8
GND1
VIN+
ISO5500
VINVCC1
GND1
RESET
FAULT
NC
GND1
Figure 9-6. Auto Reset for Non-inverting and Inverting Input Configuration
9.2.2.7 Resetting Following a Fault Condition
To resume normal switching operation following a fault condition ( FAULT output low), the gate control signal
must be driven into a 'gate low' state before asserting RESET low. This can be accomplished with a microcontroller, or an additional logic gate that synchronizes the RESET signal with the appropriate input signal.
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1
2
3
µC
4
5
6
7
8
VIN+
1
ISO5500
2
VIN-
3
VCC1
µC
4
GND1
5
RESET
6
FAULT
7
NC
8
GND1
VIN+
ISO5500
VINVCC1
GND1
RESET
FAULT
NC
GND1
Figure 9-7. Auto Reset with Prior Gate-low Assertion for Non-inverting and Inverting Input Configuration
9.2.2.8 DESAT Pin Protection
Switching inductive loads causes large instantaneous forward voltage transients across the freewheeling diodes
of IGBTs. These transients result in large negative voltage spikes on the DESAT pin which draw substantial
current out of the device. To limit this current below damaging levels, a 100 Ω to 1 kΩ resistor is connected in
series with the DESAT diode. The added resistance neither alters the DESAT threshold nor the DESAT blanking
time.
Further protection is possible through an optional Schottky diode, whose low forward voltage assures clamping
of the DESAT input to VE potential at low voltage levels.
ISO5500
VE
VEE-L
DESAT
VCC2
VC
VOUT
16
15
100
pF
DS (opt.)
RS
14
DDESAT
-
13
12
15V
Rg
11
VEE-L 10
VEE-P
+
VFW
VFW-inst
+
15V
9
Figure 9-8. DESAT Pin Protection with Series Resistor and Optional Schottky Diode
9.2.2.9 DESAT Diode and DESAT Threshold
The DESAT diode’s function is to conduct forward current, allowing sensing of the IGBT’s saturated collector-toemitter voltage, VCESAT, (when the IGBT is "on") and to block high voltages (when the IGBT is "off"). During the
short transition time when the IGBT is switching, there is commonly a high dVCE/dt voltage ramp rate across the
IGBT. This results in a charging current ICHARGE = CD-DESAT x dVCE/dt, charging the blanking capacitor.
To minimize this current and avoid false DESAT triggering, fast switching diodes with low capacitance are
recommended. As the diode capacitance builds a voltage divider with the blanking capacitor, large collector
voltage transients appear at DESAT attenuated by the ratio of 1+ CBLANK / CD-DESAT.
Table 9-1 lists a number of fast-recovery diodes suitable for the use as DESAT diodes.
Because the sum of the DESAT diode forward-voltage and the IGBT collector-emitter voltage make up the
voltage at the DESAT-pin, VF + VCE = VDESAT, the VCE level, which triggers a fault condition, can be modified
by adding multiple DESAT diodes in series: VCE-FAULT(TH) = 7.2 V – n x VF (where n is the number of DESAT
diodes).
30
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When using two diodes instead of one, diodes with half the required maximum reverse-voltage rating may be
chosen.
Table 9-1. Recommended DESAT Diodes
PART NUMBER
MANUFACTURER
trr (ns)
VRRM-max (V)
PACKAGE
STTH112
STM
75
1200
SMA, SMB, DO-41
MUR100E
Motorola
75
1000
59-04 (axial leaded)
MURS160T3
Motorola
75
600
Case 403A (SMD)
UF4007
General Semi.
75
1000
DO-204AL (axial leaded)
BYM26E
Philips
75
1000
SOD64 (axial leaded)
BYV26E
Philips
75
1000
SOD57 (axial leaded)
BYV99
Philips
75
600
SOD87 (axial leaded)
9.2.2.10 Determining the Maximum Available, Dynamic Output Power, POD-max
The ISO5500 total power consumption of PD = 592 mW consists of the total input power, PID, the total output
power, POD, and the output power under load, POL:
PD = PID + POD + POL
(2)
With:
PID = VCC1-max × ICC1-max = 5.5 V × 8.5 mA = 47 mW
(3)
and:
POD = (VCC2 – VEE-P) x ICC2-q = 30 V × 14 mA = 420 mW
(4)
then:
POL = PD – PID – POD = 592 mW – 47 mW – 420 mW = 125 mW
(5)
In comparison to POL, the actual dynamic output power under worst case condition, POL-WC, depends on a
variety of parameters:
POL-WC = 0.5 ´ fINP ´ QG ´
(VCC2
æ
ö
ron-max
roff-max
- VEE-P ) ´ ç
+
÷
roff-max + RG ø
è ron-max + R G
(6)
where
•
•
•
•
•
•
•
fINP = signal frequency at the control input VIN(±)
QG = power device gate charge
VCC2 = positive output supply with respect to VE
VEE-P = negative output supply with respect to VE
ron-max = worst case output resistance in the on-state: 4Ω
roff-max = worst case output resistance in the off-state: 2.5Ω
RG = gate resistor
Once RG is determined, Equation 6 is to be used to verify whether POL-WC < POL. Figure 9-9 shows a simplified
output stage model for calculating POL-WC.
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ISO5500
VCC2
VC
15 V
ron-max
RG
VOUT
QG
roff-max
15 V
VEE-P
Figure 9-9. Simplified Output Model for Calculating POL-WC
9.2.2.11 Determining Gate Resistor, RG
The value of the gate resistor determines the peak charge and discharge currents, ION-PK and IOFF-PK. Due to the
transient nature of these currents, their peak values only occur during the on-to-off and off-to-on transitions of
the gate voltage. In order to calculate RG for the maximum peak current, ron and roff must be assumed zero. The
resulting charge and discharge models are shown in Figure 9-10.
ISO5500
ISO5500
VCC2
VCC2
VC
VC
15 V
15 V
V CC2 - VEE-P
VOUT
V CC2 - VEE-P
Ion
VOUT
RG
RG
CG
VE
CG
VE
15 V
VEE-P
Ioff
15 V
VEE-P
Figure 9-10. Simplified Gate Charge and Discharge Model
9.2.2.11.1 Off-to-On Transition
In the off-state, the upper plate of the gate capacitance, CG, assumes a steady-state potential of –VEE-P with
respect to VE. When turning on the power device, VCC2 is applied to VOUT and the voltage drop across RG results
in a peak charge current of ION-PK = (VCC2 – VEE-P)/RG. Solving for RG then provides the necessary resistor value
for a desired on-current via:
RG =
VCC2 - VEE-P
ION-PK
(7)
9.2.2.11.2 On-to-Off Transition
When turning the power device off, the current and voltage relations are reversed but the equation for calculating
RG remains the same.
Once RG has been calculated, it is necessary to check whether the resulting, worst-case power consumption,
POD-WC, (derived in Equation 6) is below the calculated maximum, POL = 125 mW (calculated in Equation 5).
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9.2.2.12 Example
The example below considers an IGBT drive with the following parameters:
ION-PK = 2 A, QG = 650 nC, fINP = 20 kHz, VCC2 = 15V, VEE-P = –5 V
Applying Equation 7, the value of the gate resistor is calculated with
RG =
15V - ( - 5V)
= 10 Ω
2A
(8)
Then, calculating the worst-case output power consumption as a function of RG, using Equation 6 yields
4Ω
2.5 Ω
æ
ö
POL-WC = 0.5 ´ 20 kHz ´ 650 nC ´ (15 V - ( - 5V))´ ç
+
÷ = 63 mW
è 4 Ω + 10Ω 2.5 Ω + 10 Ω ø
(9)
Because POL-WC = 63 mW is well below the calculated maximum of POL = 125 mW, the resistor value of RG =
10Ω is fully suitable for this application.
9.2.2.13 Determining Collector Resistor, RC
Despite equal charge and discharge currents, many power devices possess longer turn-off propagation and fall
times than turn-on propagation and rise times. In order to compensate for the difference in switching times, it
might be necessary to significantly reduce the charge current, ION-PK, versus the discharge current, IOFF-PK.
Reducing ION-PK is accomplished by inserting an external resistor, RC, between the VC- pin and the VCC2- pin of
the ISO5500.
ISO5500
ISO5500
VCC2
VC
VCC2
RC
VC
15 V
VOUT
C2 -
VC
VE
15 V
E- P
Ion-pk
VOUT
RG
Ioff-pk
VCC2 - VEE-P
RG
CG
VE
CG
VE
15 V
15 V
VEE-P
VEE-P
Figure 9-11. Reducing ION-PK by Inserting Resistor RC
Figure 9-11 (right) shows that during the on-transition, the (VCC2 – VEE-P) voltage drop occurs across the series
resistance of RC + RG, thus reducing the peak charge current to: ION-PK = (VCC2 – VEE-P) /(RC + RG). Solving for
RC provides:
RC =
VCC2 - VEE-P
- RG
ION-PK
(10)
To stay below the maximum output power consumption, RG must be calculated first via:
RG =
VCC2 - VEE-P
IOFF-PK
(11)
and the necessary comparison of POL-WC versus POL must be completed.
Once RG is determined, calculate RC for a desired on-current using Equation 10.
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Another method is to insert Equation 11 into Equation 10 and arriving at:
æI
ö
RC = R G ´ ç OFF-PK - 1÷
è ION-PK
ø
(12)
9.2.2.13.1 Example
Reducing the peak charge current from the previous example to ION-PK = 1.5 A, requires a RC value of:
æ 2A
ö
RC = 10 Ω ´ ç
- 1÷ = 3.33 Ω
è 1.5 A
ø
(13)
9.2.2.14 Higher Output Current Using an External Current Buffer
To increase the IGBT gate drive current, a non-inverting current buffer (such as the npn/pnp buffer shown in
Figure 9-12) may be used. Inverting types are not compatible with the desaturation fault protection circuitry and
must be avoided. The MJD44H11/MJD45H11 pair is appropriate for currents up to 8 A, the D44VH10/ D45VH10
pair for up to 15 A maximum.
ISO5500
VE
VEE-L
16
15
100 pF
14
DESAT
VCC2
VC
13
12
11
VOUT
VEE-L
VEE-P
MJD44H11
or
D44VH10
15 V
4.5 W
10 W
10
2.5 W
9
MJD45H11
or
D45VH10
15 V
Figure 9-12. Current Buffer for Increased Drive Current
9.2.3 Application Curve
VCC2 - VEE = 30 V
R G = 0 W,
5 V / div
CL = 10 nF
Time 125 ns / div
Figure 9-13. Output Waveform
34
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10 Power Supply Recommendations
To provide the large transient currents necessary during a switching transition on the gate driver output, 0.1-μF
bypass capacitors are recommended between input supply and ground (VCC1 and GND1), and between output
supplies and ground (VCC2 and VE, VCC2 and VEE-P and VEE-P and VE). These capacitors are shown in Figure
9-2. These capacitors should be placed as close to the supply and ground pins as possible.
11 Layout
11.1 Layout Guidelines
A minimum of four layers is required to accomplish a low EMI PCB design (see Figure 11-1). Layer stacking
should be in the following order (top-to-bottom): high-current or sensitive signal layer, ground plane, power plane
and low-frequency signal layer.
• Routing the high-current or sensitive traces on the top layer avoids the use of vias (and the introduction of
their inductances) and allows for clean interconnects between the gate driver and the microcontroller and
power transistors. Gate driver control input, Gate driver output VOUT and DESAT should be routed in the top
layer.
• Placing a solid ground plane next to the sensitive signal layer provides an excellent low-inductance path for
the return current flow. On the driver side, use VE as the ground plane.
• Placing the power plane next to the ground plane creates additional high-frequency bypass capacitance of
approximately 100 pF/in2. On the gate-driver VEE-P and VCC2 can be used as power planes. They can share
the same layer on the PCB as long as they are not connected together.
• Routing the slower speed control signals on the bottom layer allows for greater flexibility as these signal links
usually have margin to tolerate discontinuities such as vias.
For more detailed layout recommendations, including placement of capacitors, impact of vias, reference planes,
routing etc. see Application Note SLLA284, Digital Isolator Design Guide.
11.2 PCB Material
Standard FR-4 epoxy-glass is recommended as PCB material. FR-4 (Flame Retardant 4) meets the
requirements of Underwriters Laboratories UL94-V0, and is preferred over cheaper alternatives due to its
lower dielectric losses at high frequencies, less moisture absorption, greater strength and stiffness, and its
self-extinguishing flammability-characteristics.
11.3 Layout Example
High-speed traces
10 mils
Ground plane
40 mils
Keep this space
free from planes,
traces, pads, and
vias
FR-4
0r ~ 4.5
Power plane
10 mils
Low-speed traces
Figure 11-1. Recommended Layer Stack
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12 Device and Documentation Support
12.1 Device Support
12.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
12.2 Documentation Support
12.2.1 Related Documentation
For related documentation see the following:
•
•
ISO5500 Evaluation Module (EVM) User’s Guide, SLLU136
Digital Isolator Design Guide, SLLA284
12.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
12.4 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
12.5 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
12.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
12.7 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
(3)
Device Marking
(4/5)
(6)
ISO5500DW
LIFEBUY
SOIC
DW
16
40
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
ISO5500DW
ISO5500DWR
LIFEBUY
SOIC
DW
16
2000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
ISO5500DW
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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