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ISO7142CC
SLLSEF1B – SEPTEMBER 2013 – REVISED AUGUST 2015
ISO7142CC 4242-VPK Small-Footprint and Low-Power Quad Channel Digital Isolator
1 Features
2 Applications
•
•
•
•
•
1
•
•
•
•
•
•
•
•
•
Maximum Signaling Rate: 50 Mbps (with 5-V
Supplies)
Robust Design With Integrated Noise Filter
Low-Power Consumption, Typical ICC per Channel
(with 3.3-V Supplies):
– 1.3 mA at 1 Mbps, 2.5 mA at 25 Mbps
Wide Temperature Range: –55°C to 125°C
50 kV/µs Transient Immunity, Typical
Long Life with SiO2 Isolation Barrier
Operates From 2.7-V, 3.3-V and 5-V Supply
2.7-V to 5.5-V Level Translation
Small QSOP-16 Package
Safety and Regulatory Approvals
– 2500-VRMS Isolation for 1 Minute per UL 1577
– 4242-VPK Isolation per DIN V VDE V 0884-10
(VDE V 0884-10):2006-12
– CSA Component Acceptance Notice 5A, IEC
60950-1 and IEC 61010-1 End Equipment
Standards
– CQC Certification per GB4943.1-2011
General Purpose Isolation
Industrial Automation
Motor Control
Solar Inverters
3 Description
ISO7142CC provides galvanic isolation up to 2500VRMS for 1 minute per UL and 4242-VPK per VDE.
ISO7142CC is a quad-channel isolator with two
forward and two reverse-direction channels. This
device is capable of maximum data rate of 50 Mbps
with 5-V supplies and 40 Mbps with 3.3-V or 2.7-V
supplies. ISO7142CC has integrated filters on the
inputs to support noise-prone applications.
Each isolation channel has a logic input and output
buffer separated by a silicon dioxide (SiO2) insulation
barrier. Used in conjunction with isolated power
supplies, this device prevents noise currents on a
data bus or other circuits from entering the local
ground and interfering with or damaging sensitive
circuitry. This device has TTL input thresholds and
can operate from 2.7-V, 3.3-V, and 5-V supplies.
Device Information(1)
PART NUMBER
ISO7142CC
PACKAGE
SSOP (16)
BODY SIZE (NOM)
4.90 mm × 3.90 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
VCCI
Isolation
Capacitor
VCCO
INx
OUTx
ENx
GNDI
GNDO
(1)
VCCI and GNDI are supply and ground connections respectively for the input channels.
(2)
VCCO and GNDO are supply and ground connections respectively for the output channels.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
ISO7142CC
SLLSEF1B – SEPTEMBER 2013 – REVISED AUGUST 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
6.10
6.11
6.12
6.13
6.14
6.15
4
4
4
4
5
5
5
5
6
6
7
7
7
7
8
Absolute Maximum Ratings .....................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics, 5 V ...................................
Electrical Characteristics, 3.3 V ................................
Electrical Characteristics, 2.7 V ................................
Power Dissipation Characteristics ............................
Switching Characteristics, 5 V ..................................
Switching Characteristics, 3.3 V .............................
Switching Characteristics, 2.7 V .............................
Supply Current, 5 V.................................................
Supply Current, 3.3 V..............................................
Supply Current, 2.7 V..............................................
Typical Characteristics ............................................
7
8
Parameter Measurement Information ................ 10
Detailed Description ............................................ 12
8.1
8.2
8.3
8.4
9
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
12
12
13
15
Application and Implementation ........................ 16
9.1 Application Information............................................ 16
9.2 Typical Application ................................................. 16
10 Power Supply Recommendations ..................... 18
11 Layout................................................................... 19
11.1 Layout Guidelines ................................................. 19
11.2 Layout Example .................................................... 19
12 Device and Documentation Support ................. 20
12.1
12.2
12.3
12.4
12.5
Documentation Support ........................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
20
20
20
20
20
13 Mechanical, Packaging, and Orderable
Information ........................................................... 20
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (September 2013) to Revision B
Page
•
Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
•
Changed VDE Standard to DIN V VDE V 0884-10 (VDE V 0884-10)2006-12 ...................................................................... 1
Changes from Original (September 2013) to Revision A
Page
•
Deleted the MIN value of –55°C from TJ in the RECOMMENDED OPERATING CONDITIONS table ................................. 4
•
Changed the TYP value of CI From: 3.5 To: 2 pF in the INSULATION AND SAFETY-RELATED SPECIFICATIONS
table ...................................................................................................................................................................................... 13
•
Changed the CSA column description for Basic Insulation .................................................................................................. 14
•
Changed Figure 13............................................................................................................................................................... 15
2
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SLLSEF1B – SEPTEMBER 2013 – REVISED AUGUST 2015
5 Pin Configuration and Functions
DBQ Package
16-Pin SSOP
Top View
VCC1
1
16
GND1
2
15
GND2
INA
INB
3
14
OUTA
4
13
OUTB
OUTC
5
12
INC
OUTD
6
11
IND
EN1
7
10
EN2
GND1
8
9
VCC2
GND2
Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
EN1
7
I
Output enable 1. Output pins on side 1 are enabled when EN1 is high or open and in highimpedance state when EN1 is low.
EN2
10
I
Output enable 2. Output pins on side 2 are enabled when EN2 is high or open and in highimpedance state when EN2 is low.
GND1
2,8
—
Ground connection for VCC1
GND2
9,15
—
Ground connection for VCC2
3
I
Input, channel A
INB
4
I
Input, channel B
INC
12
I
Input, channel C
IND
11
I
Input, channel D
OUTA
14
O
Output, channel A
OUTB
13
O
Output, channel B
OUTC
5
O
Output, channel C
OUTD
6
O
Output, channel D
VCC1
1
—
Power supply, VCC1
VCC2
16
—
Power supply, VCC2
INA
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SLLSEF1B – SEPTEMBER 2013 – REVISED AUGUST 2015
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6 Specifications
6.1 Absolute Maximum Ratings (1)
MIN
MAX
UNIT
VCC1, VCC2
Supply voltage (2)
–0.5
6
V
V
Voltage at INx, OUTx, ENx
–0.5
VCC + 0.5 (3)
V
IO
Output current
-15
15
mA
TJ
Maximum junction temperature
150
°C
Tstg
Storage temperature
150
°C
(1)
(2)
(3)
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values except differential I/O bus voltages are with respect to the local ground terminal (GND1 or GND2) and are peak
voltage values.
Maximum voltage must not exceed 6 V.
6.2 ESD Ratings
VALUE
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001
V(ESD)
(1)
(2)
Electrostatic discharge
(1)
UNIT
±4000
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
±1500
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
MIN
VCC1, VCC2
IOH
Supply voltage
2.7
High-level output current (VCC ≥ 3.0 V)
–4
High-level output current (VCC < 3.0 V)
–2
IOL
Low-level output current
VIH
High-level input voltage
VIL
Low-level input voltage
tui
1 / tui
NOM
MAX
5.5
mA
4
V
0
0.8
V
Input pulse duration (VCC < 4.5V)
25
ns
Signaling rate (VCC ≥ 4.5V)
0
50
Signaling rate (VCC < 4.5V)
0
40
Junction temperature
Ambient temperature
mA
5.5
20
TA
V
2
Input pulse duration (VCC ≥ 4.5V)
TJ
UNIT
–55
25
Mbps
136
°C
125
°C
6.4 Thermal Information
ISO7142CC
THERMAL METRIC
(1)
DBQ (SSOP)
UNIT
16 PINS
RθJA
Junction-to-ambient thermal resistance
104.5
°C/W
RθJC(top)
Junction-to-case(top) thermal resistance
57.8
°C/W
RθJB
Junction-to-board thermal resistance
46.8
°C/W
ψJT
Junction-to-top characterization parameter
18.3
°C/W
ψJB
Junction-to-board characterization parameter
46.4
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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6.5 Electrical Characteristics, 5 V
VCC1 and VCC2 at 5 V ± 10% (over recommended operating conditions unless otherwise noted.)
PARAMETER
VOH
High-level output voltage
VOL
Low-level output voltage
VI(HYS)
Input threshold voltage
hysteresis
TEST CONDITIONS
IOH = –4 mA; see Figure 8
VCCO
IOH = –20 μA; see Figure 8
TYP
MAX
UNIT
– 0.5
V
VCCO – 0.1
IOL = 4 mA; see Figure 8
0.4
IOL = 20 μA; see Figure 8
0.1
V
480
(1)
IIH
High-level input current
VIH = VCCI
IIL
Low-level input current
VIL = 0 V at INx or ENx
CMTI
Common-mode transient
immunity
VI = VCCI or 0 V; see Figure 11
(1)
MIN
(1)
mV
10
at INx or ENx
μA
–10
25
70
MIN
TYP
kV/μs
VCCI= Supply voltage for the input channel; VCCO = Supply voltage for the output channel
6.6 Electrical Characteristics, 3.3 V
VCC1 and VCC2 at 3.3 V ± 10% (over recommended operating conditions unless otherwise noted.)
PARAMETER
TEST CONDITIONS
IOH = –4 mA; see Figure 8
VOH
High-level output voltage
VOL
Low-level output voltage
VI(HYS)
Input threshold voltage hysteresis
IOH = –20 μA; see Figure 8
(1)
MAX
UNIT
– 0.5
V
VCCO – 0.1
IOL = 4 mA; see Figure 8
0.4
IOL = 20 μA; see Figure 8
0.1
V
460
(1)
IIH
High-level input current
VIH = VCCI
IIL
Low-level input current
VIL = 0 V at INx or ENx
CMTI
Common-mode transient
immunity
VI = VCCI or 0 V; see Figure 11
(1)
VCCO
mV
at INx or ENx
10
μA
–10
25
50
MIN
TYP
kV/μs
VCCI= Supply voltage for the input channel; VCCO = Supply voltage for the output channel
6.7 Electrical Characteristics, 2.7 V
VCC1 and VCC2 at 2.7 V (over recommended operating conditions unless otherwise noted.)
PARAMETER
TEST CONDITIONS
IOH = –2 mA; see Figure 8
VOH
High-level output voltage
VOL
Low-level output voltage
VI(HYS)
Input threshold voltage
hysteresis
IIH
High-level input current
VIH = VCCI (1) at INx or ENx
IIL
Low-level input current
VIL = 0 V at INx or ENx
CMTI
Common-mode transient
immunity
VI = VCCI or 0 V; see Figure 11
(1)
VCCO
IOH = –20 μA; see Figure 8
(1)
MAX
UNIT
– 0.3
V
VCCO – 0.1
IOL = 4 mA; see Figure 8
0.4
IOL = 20 μA; see Figure 8
0.1
V
360
mV
10
μA
-10
25
45
kV/μs
VCCI= Supply voltage for the input channel; VCCO = Supply voltage for the output channel
6.8 Power Dissipation Characteristics
PARAMETER
PD
Device power
dissipation
TEST CONDITIONS
VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL = 15 pF
Input a 25-MHz, 50% duty cycle square wave
MIN
TYP
MAX
UNIT
170
mW
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6.9 Switching Characteristics, 5 V
VCC1 and VCC2 at 5 V ± 10% (over recommended operating conditions unless otherwise noted.)
PARAMETER
TEST CONDITIONS
MIN
TYP
15
21
MAX UNIT
tPLH, tPHL
Propagation delay time
See Figure 8
38
ns
PWD (1)
Pulse width distortion |tPHL – tPLH|
See Figure 8
3.5
ns
Same-direction
channels
1.5
Opposite-direction
channels
6.5
tsk(o)
(2)
tsk(pp)
Channel-to-channel output skew time
(3)
ns
Part-to-part skew time
14
ns
tr
Output signal rise time
See Figure 8
2.5
tf
Output signal fall time
See Figure 8
2.1
tPHZ, tPLZ
Disable propagation delay, high/low-to-high impedance output
See Figure 9
7
12
ns
tPZH
Enable propagation delay, high impedance-to-high output
See Figure 9
6
12
ns
tPZL
Enable propagation delay, high impedance-to-low output
See Figure 9
12
23
tfs
Fail-safe output delay time from input data or power loss
See Figure 10
8
μs
tGR
Input glitch rejection time
9.5
ns
(1)
(2)
(3)
ns
ns
us
Also known as pulse skew
tsk(o) is the skew between outputs of a single device with all driving inputs connected together and the outputs switching in the same
direction while driving identical loads.
tsk(pp) is the magnitude of the difference in propagation delay times between any terminals of different devices switching in the same
direction while operating at identical supply voltages, temperature, input signals, and loads.
6.10 Switching Characteristics, 3.3 V
VCC1 and VCC2 at 3.3 V ± 10% (over recommended operating conditions unless otherwise noted.)
PARAMETER
TEST CONDITIONS
MIN
TYP
16
25
MAX UNIT
tPLH, tPHL
Propagation delay time
See Figure 8
46
ns
PWD (1)
Pulse width distortion |tPHL – tPLH|
See Figure 8
3
ns
Same-direction
Channels
2
tsk(o)
(2)
tsk(pp)
Channel-to-channel output skew time
(3)
ns
Opposite-direction
Channels
6.5
Part-to-part skew time
21
ns
tr
Output signal rise time
See Figure 8
3
ns
tf
Output signal fall time
See Figure 8
2.5
ns
tPHZ, tPLZ
Disable propagation delay, from high/low to high-impedance output
See Figure 9
9
14
ns
tPZH
Enable propagation delay, from high-impedance to high output
See Figure 9
9
17
ns
tPZL
Enable propagation delay, from high-impedance to low output
See Figure 9
12
24
tfs
Fail-safe output delay time from input data or power loss
See Figure 10
7
μs
tGR
Input glitch rejection time
11
ns
(1)
(2)
(3)
6
us
Also known as pulse skew
tsk(o) is the skew between outputs of a single device with all driving inputs connected together and the outputs switching in the same
direction while driving identical loads.
tsk(pp) is the magnitude of the difference in propagation delay times between any terminals of different devices switching in the same
direction while operating at identical supply voltages, temperature, input signals and loads.
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6.11 Switching Characteristics, 2.7 V
VCC1 and VCC2 at 2.7 V (over recommended operating conditions unless otherwise noted.)
PARAMETER
TEST CONDITIONS
MIN
TYP
18
28
MAX UNIT
tPLH, tPHL
Propagation delay time
See Figure 8
50
ns
PWD (1)
Pulse width distortion |tPHL – tPLH|
See Figure 8
3
ns
Same-direction
Channels
3
ns
8.5
ns
24
ns
tsk(o)
(2)
tsk(pp)
(3)
Channel-to-channel output skew time
Opposite-direction
Channels
Part-to-part skew time
tr
Output signal rise time
See Figure 8
3.5
tf
Output signal fall time
See Figure 8
2.8
tPHZ, tPLZ
Disable propagation delay, from high/low to high-impedance output
See Figure 9
10
15
ns
tPZH
Enable propagation delay, from high-impedance to high output
See Figure 9
10
19
ns
tPZL
Enable propagation delay, from high-impedance to low output
See Figure 9
12
23
tfs
Fail-safe output delay time from input data or power loss
See Figure 10
7
μs
tGR
Input glitch rejection time
12
ns
(1)
(2)
(3)
ns
ns
us
Also known as pulse skew
tsk(o) is the skew between outputs of a single device with all driving inputs connected together and the outputs switching in the same
direction while driving identical loads.
tsk(pp) is the magnitude of the difference in propagation delay times between any terminals of different devices switching in the same
direction while operating at identical supply voltages, temperature, input signals, and loads.
6.12 Supply Current, 5 V
VCC1 and VCC2 at 5 V ± 10% (over recommended operating conditions unless otherwise noted.)
PARAMETER
TEST CONDITIONS
ICC1, ICC2
Disable
ICC1 , ICC2
DC to 1 Mbps
ICC1, ICC2
10 Mbps
ICC1, ICC2
25 Mbps
ICC1, ICC2
50 Mbps
MIN
EN1 = EN2 = 0 V
DC Signal: VI = VCCI or 0 V,
AC Signal: All channels switching with square wave
clock input; CL = 15 pF
TYP
MAX
0.8
1.6
3.3
5
4.9
7
7.3
10
11.1
14.5
TYP
MAX
0.5
1
2.5
4
3.5
5
5
7
6.5
10
TYP
MAX
0.4
0.8
2.2
3.5
UNIT
mA
6.13 Supply Current, 3.3 V
VCC1 and VCC2 at 3.3 V ± 10% (over recommended operating conditions unless otherwise noted.)
PARAMETER
TEST CONDITIONS
ICC1, ICC2
Disable
ICC1, ICC2
DC to 1 Mbps
ICC1, ICC2
10 Mbps
ICC1, ICC2
25 Mbps
ICC1, ICC2
40 Mbps
MIN
EN1 = EN2 = 0 V
DC signal: VI = VCCI or 0 V
AC signal: All channels switching with square-wave
clock input; CL = 15 pF
UNIT
mA
6.14 Supply Current, 2.7 V
VCC1 and VCC2 at 2.7 V (over recommended operating conditions unless otherwise noted.)
PARAMETER
TEST CONDITIONS
ICC1, ICC2
Disable
ICC1, ICC2
DC to 1 Mbps
ICC1, ICC2
10 Mbps
ICC1, ICC2
25 Mbps
ICC1, ICC2
40 Mbps
EN1 = EN2 = 0 V
DC signal: VI = VCCI or 0 V
AC signal: All channels switching with square-wave
clock input; CL = 15 pF
MIN
3
4.2
4.2
5.5
5.4
7.5
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UNIT
mA
7
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6.15 Typical Characteristics
12
High-Level Output Voltage (V)
10
Supply Current (mA)
6
ICC13.3v
ICC1
at 3.3 V
ICC23.3v
ICC2
at 3.3 V
ICC15v
ICC1
at 5 V
ICC2
at 5 V
ICC25v
8
6
4
2
5
4
3
2
1
ICC_3.3V
VCC
at 3.3 V
0
VCC
at 5 V
ICC_5V
0
±1
0
10
20
30
40
50
Data Rate (Mbps)
60
±15
1.2
Low-Level Output Voltage (V)
VCC3.3V
VCC
at 3.3 V
VCC
at 5 V
VCC_5V
0.8
0.4
0.0
5
10
15
C003
Low-Level Output Current (mA)
2.48
2.46
2.44
VCCVCC_rise
Rising
2.42
VCCVCC_fall
Falling
2.40
2.38
2.36
2.34
±55
25
12
Input Glitch Rejection Time (ns)
Propagation Delay Time (ns)
14
20
15
tpLHPLH_3.3
at 3.3 V
tpHLPHL_3.3
at 3.3 V
tpLHPLH_5V
at 5 V
tpHLPHL_5V
at 5 V
0
±55
±25
5
35
65
95
95
125
C004
125
8
6
4
tGRtgr_3.3v
at 3.3 V
tGRtgr_2.7v
at 2.7 V
tGRtgr_5v
at 5 V
2
0
±55
Figure 5. Propagation Delay Time
vs Free-Air Temperature
8
5
35
65
Free-Air Temperature (°C)
10
C005
Free-Air Temperature (oC)
±25
Figure 4. VCC Undervoltage Threshold
vs Free-Air Temperature
30
5
C002
2.50
Figure 3. Low-Level Output Voltage
vs Low-Level Output Current
10
0
±5
Figure 2. High-Level Output Voltage
vs High-Level Output Current
Power Supply Undervoltage Threshold (V)
Figure 1. ISO7142 Supply Current for All Channels vs Data
Rate
0
±10
High-Level Output Current (mA)
C001
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±25
5
35
65
95
Free-Air Temperature (oC)
125
C006
Figure 6. Input Glitch Rejection Time
vs Free-Air Temperature
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Typical Characteristics (continued)
Peak-Peak Output Jitter (ns)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Output jitter at 2.7 V
0.4
Output jitter at 3.3 V
0.2
Output Jitter at 5 V
0.0
0
20
40
Data Rate (Mbps)
60
C007
Figure 7. Peak-Peak Output Jitter vs Data Rate
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Isolation Barrier
7 Parameter Measurement Information
IN
Input
Generator
Note A
50 W
VI
VCCI
VI
OUT
50%
50%
0V
tPLH
VO
CL
Note B
tPHL
90%
10%
50%
VO
VOH
50%
VOL
tr
tf
A.
The input pulse is supplied by a generator having the following characteristics: PRR ≤ 50 kHz, 50% duty cycle, tr ≤ 3
ns, tf ≤ 3 ns, ZO = 50 Ω. At the input, a 50-Ω resistor is required to terminate the input-generator signal. It is not
needed in an actual application.
B.
CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 8. Switching-Characteristics Test Circuit and Voltage Waveforms
VCC
VCC
ISOLATION BARRIER
0V
R L = 1 k W ± 1%
IN
Input
Generator
VI
OUT
EN
VO
0V
tPLZ
tPZL
VO
CL
VCC/2
VCC/2
VCC
0.5 V
50%
VOL
NOTE
B
VI
50 W
ISOLATION BARRIER
NOTE A
IN
3V
Input
Generator
NOTE A
VI
VCC
VO
OUT
VCC/2
VI
VCC/2
0V
EN
CL
NOTE
B
50 W
tPZH
R L = 1 k W ± 1%
VO
VOH
50%
0.5 V
tPHZ
A.
The input pulse is supplied by a generator having the following characteristics: PRR ≤ 50 kHz, 50% duty cycle, tr ≤ 3
ns, tf ≤ 3 ns, ZO = 50 Ω.
B.
CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
0V
Figure 9. Enable/Disable Propagation Delay-Time Test Circuit and Waveform
10
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Parameter Measurement Information (continued)
VI
IN
VIN = 0 V
VCC
ISOLATION BARRIER
VCC
2.7 V
VI
0V
OUT
t fs
VO
50%
VO
CL
VOH
NOTE A
A.
CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 10. Failsafe Delay-Time Test Circuit and Voltage Waveforms
S1
IN
C = 0.1 μ F ±1%
Isolation Barrier
VCCI
GNDI
VCCO
C = 0.1 μ F ±1%
Pass-fail criteria –
output must remain
stable.
OUT
+
CL
Note A
GNDO
VOH or VOL
–
+ VCM –
A.
CL = 15pF and includes instrumentation and fixture capacitance within ±20%.
Figure 11. Common-Mode Transient Immunity Test Circuit
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8 Detailed Description
8.1 Overview
The isolator in Figure 12 is based on a capacitive isolation barrier technique. The I/O channel of the device
consists of two internal data channels, a high-frequency channel (HF) with a bandwidth from 100 kbps up to
50 Mbps, and a low-frequency channel (LF) covering the range from 100 kbps down to DC. In principle, a singleended input signal entering the HF-channel is split into a differential signal through the inverter gate at the input.
The following capacitor-resistor networks differentiate the signal into transients, which then are converted into
differential pulses by two comparators. The comparator outputs drive a NOR-gate flip-flop whose output feeds an
output multiplexer. A decision logic (DCL) at the driving output of the flip-flop measures the durations between
signal transients. If the duration between two consecutive transients exceeds a certain time limit, (as in the case
of a low-frequency signal), the DCL forces the output-multiplexer to switch from the high- to the low-frequency
channel.
Because low-frequency input signals require the internal capacitors to assume prohibitively large values, these
signals are pulse-width modulated (PWM) with the carrier frequency of an internal oscillator, thus creating a
sufficiently high frequency signal, capable of passing the capacitive barrier. As the input is modulated, a low-pass
filter (LPF) is needed to remove the high-frequency carrier from the actual data before passing it on to the output
multiplexer.
8.2 Functional Block Diagram
Isolation Barrier
OSC
LPF
LowtFrequency
Channel
(DC...100 kbps)
PWM
VREF
0
OUT
1 S
IN
DCL
HightFrequency
Channel
(100 kbps...50 Mbps)
VREF
Figure 12. Conceptual Block Diagram of a Digital Capacitive Isolator
12
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8.3 Feature Description
8.3.1 Insulation and Safety-Related Specifications
PARAMETER
DTI
CI
(1)
TEST CONDITIONS
Distance through the insulation
Minimum internal gap (internal clearance)
Input capacitance
VI = VCC/2 + 0.4 sin (2πft), f = 1 MHz, VCC = 5 V
MIN
TYP
MAX
0.014
UNIT
mm
2
pF
DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
VIOTM
Maximum transient isolation voltage
VIORM
Maximum working isolation voltage
VPR
Input-to-output test voltage
4242
VPK
566
VPK
After Input/Output safety test subgroup 2/3,
VPR = VIORM x 1.2, t = 10 s,
Partial discharge < 5 pC
679
Method a, After environmental tests subgroup 1,
VPR = VIORM x 1.6, t = 10 s,
Partial discharge < 5 pC
906
Method b1, 100% production test,
VPR = VIORM x 1.875, t = 1 s,
Partial discharge < 5 pC
VPK
1061
L(I01)
Minimum air gap (clearance)
Shortest terminal to terminal distance through air
3.7
mm
L(I02)
Minimum external tracking
(creepage)
Shortest terminal to terminal distance across the
package surface
3.7
mm
Pollution degree
2
Tracking resistance (comparative
tracking index)
CTI
DIN EN 60112 (VDE 0303-11); IEC 60112
o
RIO
(2)
Isolation resistance, input to output
>10
VIO = 500 V, 100oC ≤ TA ≤ 125oC
>1011
VIO = 500 V, TS = 150 C
(2)
Barrier capacitance, input to output
V
12
VIO = 500 V, TA = 25 C
o
CIO
≥400
VI = 0.4 sin (2πft), f = 1 MHz
Ω
9
>10
2.4
pF
UL 1577
Withstanding Isolation voltage
VISO
(1)
(2)
VTEST = VISO= 2500 VRMS, 60 sec (qualification);
VTEST = 1.2 * VISO= 3000 VRMS, 1 sec (100%
production)
2500
VRMS
Measured from input data pin to ground.
All pins on each side of the barrier tied together creating a two-terminal device.
spacer
NOTE
Creepage and clearance requirements should be applied according to the specific
equipment isolation standards of an application. Care should be taken to maintain the
creepage and clearance distance of a board design to ensure that the mounting pads of
the isolator on the printed circuit board do not reduce this distance.
Creepage and clearance on a printed circuit board become equal in certain cases.
Techniques such as inserting grooves and/or ribs on a printed circuit board are used to
help increase these specifications.
Table 1. IEC 60664-1 Ratings Table
PARAMETER
TEST CONDITIONS
Material Group
Installation classification / Overvoltage
Category for Basic Insulation
SPECIFICATION
II
Rated mains voltage ≤ 150 VRMS
I–IV
Rated mains voltage ≤ 300 VRMS
I–III
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8.3.2 Regulatory Information
VDE
Certified according to DIN V
VDE V 0884-10 (VDE V 088410):2006-12 and DIN EN
61010-1 (VDE 0411-1):2011-07
UL
CSA
Certified under UL 1577
Component Recognition
Program
Basic Insulation;
Maximum transient Isolation
IsolatiIsolationvoltage, 4242 VPK Single protection, 2500 VRMS
Maximum working isolation
voltage, 566 VPK
File number: 40016131
(1)
File number: E181974
(1)
CQC
Approved under CSA Component
Acceptance Notice 5A, IEC 60950-1
and IEC 61010-1
Certified according to GB
4943.1-2011
3000 VRMS Isolation rating;
185 VRMS Reinforced Insulation and
370 VRMS Basic Insulation per CSA
60950-1-07+A1+A2 and IEC 60950-1
2nd Ed.+A1+A2;
150 VRMS Reinforced Insulation and
300 VRMS Basic Insulation per CSA
61010-1-12 and IEC 61010-1 3rd Ed.
Basic Insulation, Altitude ≤
5000m, Tropical climate, 250
VRMS maximum working
voltage.
Master contract number: 220991
Certificate number:
CQC14001109540
Production tested ≥ 3000 VRMS for 1 second in accordance with UL 1577.
8.3.3 Safety Limiting Values
Safety limiting intends to prevent potential damage to the isolation barrier upon failure of input or output circuitry.
A failure of the IO can allow low resistance to ground or the supply and, without current limiting, dissipate
sufficient power to overheat the die and damage the isolation barrier, potentially leading to secondary system
failures.
PARAMETER
IS
TS
TEST CONDITIONS
Safety input, output, or supply
current
DBQ-16
MIN
TYP MAX
θJA = 104.5°C/W, VI = 5.5V, TJ = 150°C, TA = 25°C
217
θJA = 104.5°C/W, VI = 3.6V, TJ = 150°C, TA = 25°C
332
θJA = 104.5°C/W, VI = 2.7V, TJ = 150°C, TA = 25°C
443
Maximum safety temperature
150
UNIT
mA
°C
The safety-limiting constraint is the absolute-maximum junction temperature specified in the Absolute Maximum
Ratings table. The power dissipation and junction-to-air thermal impedance of the device installed in the
application hardware determines the junction temperature. The assumed junction-to-air thermal resistance in the
Thermal Information table is that of a device installed on a high-K test board for leaded surface-mount packages.
The power is the recommended maximum input voltage times the current. The junction temperature is then the
ambient temperature plus the power times the junction-to-air thermal resistance.
500
Safety Limiting Current - mA
450
VCC1 = VCC2 = 2.7 V
VCC1 = VCC2 = 3.6 V
VCC1 = VCC2 = 5.5 V
400
350
300
250
200
150
100
50
0
0
50
100
Case Temperature - qC
150
200
D001
NOTE: Thermal Derating Curve for Safety Limiting Current per VDE
14
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8.4 Device Functional Modes
Table 2. Function Table (1)
VCCI
VCCO
PU
(1)
PU
INPUT
(INx)
OUTPUT ENABLE
(ENx)
OUTPUT
(OUTx)
H
H or open
H
L
H or open
L
X
L
Z
Open
H or open
H
H or open
H
PD
PU
X
PD
PU
X
L
Z
X
PD
X
X
Undetermined
VCCI = Input-side Supply Voltage; VCCO = Output-side Supply Voltage; PU = Powered Up (VCC ≥ 2.7
V); PD = Powered Down (VCC ≤ 2.1 V); X = Irrelevant; H = High Level; L = Low Level; Z = High
Impedance
Output
Input
VCCI
VCCI
VCCO
VCCI
VCCI
5 mA
500 W
40 W
INx
OUTx
Enable
VCCO
VCCO VCCO
VCCO
5 mA
500 W
ENx
Figure 13. Device I/O Schematics
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
ISO7142CC uses single-ended TTL-logic switching technology. Its supply voltage range is from 2.7 V to 5.5 V for
both supplies, VCC1 and VCC2. When designing with digital isolators, it is important to note that due to the singleended design structure, digital isolators do not conform to any specific interface standard and are only intended
for isolating single-ended CMOS or TTL digital signal lines. The isolator is typically placed between the data
controller (that is, µC or UART), and a data converter or a line transceiver, regardless of the interface type or
standard.
9.2 Typical Application
Typical isolated RS-232 interface implementation is shown in Figure 14.
VIN
3.3 V
0.1 F
2
VCC
D2
1:2.1
3
MBR0520L
1
SN6501
10 F 0.1 F
GND D1
1
10 F
4, 5
OUT
IN
5VISO
5
LP2985-50
3
ON
MBR0520L
3.3 F
4
BP
GND
2
10 nF
0.1 F
ISO-BARRIER
0.1 F
0.1 F
16
1 F
0.1 F
16
1
4.7 k
2
DVCC
5
6
XOUT
XIN
7
UCA0TXD
MSP430
F2132
UCA0RXD
DVSS
P3.0
4
P3.1
15
3
16
5
12
4
11
6
VCC1
VCC2
EN1
INA
EN2
ISO7142
OUTC
INB
OUTD
GND1
2, 8
OUTA
INC
OUTB
IND
1
4.7 k
10
2
1 F
3
14
11
12
12
13
10
11
9
GND2
9, 15
VCC
VS+
VS-
C1+
C2+
TRS232
C1-
C2T1OUT
T1IN
R1IN
R1OUT
T2OUT
T2IN
R2OUT
R2IN
6
1 F
4
5
14
13
7
8
1 F
TxD
RxD
RST
CST
GND
15
ISOGND
Figure 14. Typical Isolated RS-232 Application Circuit for ISO7142
9.2.1 Design Requirements
Unlike optocouplers, which require external components to improve performance, provide bias, or limit current,
ISO7142CC only requires two external bypass capacitors to operate.
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Typical Application (continued)
9.2.2 Detailed Design Procedure
Figure 15 shows the hookup of a typical ISO7142CC circuit. The only external components are two bypass
capacitors.
VCC1
VCC2
ISO7142CC
0.1 µF
VCC1
0.1 µF
VCC2
1
16
2
15
INA
3
14
OUTA
INB
4
13
OUTB
OUTC
5
12
INC
OUTD
6
11
IND
7
10
GND1
GND2
EN2
EN1
9
8
GND2
GND1
Figure 15. Typical ISO7142CC Circuit Hook-up
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Typical Application (continued)
9.2.3 Application Curves
Figure 16. Typical Eye Diagram at 40 Mbps,
PRBS 216 - 1, 2.7-V Operation
Figure 17. Typical Eye Diagram at 40 Mbps,
PRBS 216 - 1, 3.3-V Operation
Figure 18. Typical Eye Diagram at 50 Mbps,
PRBS 216 - 1, 5-V Operation
10 Power Supply Recommendations
To help ensure reliable operation supply voltages, a 0.1-µF bypass capacitor is recommended at input and
output supply pins (VCC1 and VCC2). The capacitors should be placed as close to the supply pins as possible. If
only a single primary-side power supply is available in an application, isolated power can be generated for the
secondary-side with the help of a transformer driver such as Texas Instruments' SN6501. For such applications,
detailed power supply design and transformer selection recommendations are available in SN6501 datasheet
(SLLSEA0).
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11 Layout
11.1 Layout Guidelines
A minimum of four layers is required to accomplish a low EMI PCB design (see Figure 19). Layer stacking should
be in the following order (top-to-bottom): high-speed signal layer, ground plane, power plane and low-frequency
signal layer.
• Routing the high-speed traces on the top layer avoids the use of vias (and the introduction of their
inductances) and allows for clean interconnects between the isolator and the transmitter and receiver circuits
of the data link.
• Placing a solid ground plane next to the high-speed signal layer establishes controlled impedance for
transmission line interconnects and provides an excellent low-inductance path for the return current flow.
• Placing the power plane next to the ground plane creates additional high-frequency bypass capacitance of
approximately 100 pF/in2.
• Routing the slower speed control signals on the bottom layer allows for greater flexibility as these signal links
usually have margin to tolerate discontinuities such as vias.
If an additional supply voltage plane or signal layer is needed, add a second power and ground plane system to
the stack to keep it symmetrical. This makes the stack mechanically stable and prevents it from warping. Also the
power and ground plane of each power system can be placed closer together, thus increasing the high-frequency
bypass capacitance significantly.
For detailed layout recommendations, see Application Note, Digital Isolator Design Guide, SLLA284.
11.1.1 PCB Material
For digital circuit boards operating below 150 Mbps, (or rise and fall times higher than 1 ns), and trace lengths of
up to 10 inches, use standard FR-4 UL 94 V-0 printed circuit board. This is preferred over cheaper alternatives
because of lower dielectric losses at high frequencies, less moisture absorption, greater strength and stiffness,
and self-extinguishing flammability-characteristics.
11.2 Layout Example
High-speed traces
10 mils
Ground plane
40 mils
Keep this
space free
from planes,
traces, pads,
and vias
FR-4
0r ~ 4.5
Power plane
10 mils
Low-speed traces
Figure 19. Recommended Layer Stack
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation, see the following:
• Transformer Driver for Isolated Power Supplies, SLLSEA0
• Digital Isolator Design Guide, SLLA284
• Isolation Glossary , SLLA353
12.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.3 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
ISO7142CCDBQ
ACTIVE
SSOP
DBQ
16
75
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-55 to 125
7142C
ISO7142CCDBQR
ACTIVE
SSOP
DBQ
16
2500
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-55 to 125
7142C
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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