ISO7710-Q1
ISO7710-Q1
SLLSEU2B – MARCH 2017 – REVISED OCTOBER
2020
SLLSEU2B – MARCH 2017 – REVISED OCTOBER 2020
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ISO7710-Q1 High Speed, Robust EMC Reinforced Single-Channel Digital Isolator
1 Features
3 Description
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•
The ISO7710-Q1 device is a high-performance,
single-channel digital isolator with 5000 V RMS (DW
package) and 3000 V RMS (D package) isolation
ratings per UL 1577. This device is also certified by
VDE, TUV, CSA, and CQC.
•
•
•
•
•
•
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•
•
•
•
Qualified for automotive applications
AEC-Q100 Qualified with the following results:
– Device temperature grade 1: –40°C to +125°C
ambient operating temperature range
– Device HBM ESD classification level 3A
– Device CDM ESD classification level C6
Functional Safety-Capable
– Documentation available to aid functional safety
system design
100 Mbps data rate
Robust isolation barrier:
– >100-year projected lifetime at 1500 VRMS
working voltage
– Up to 5000 VRMS isolation rating
– Up to 12.8 kV surge capability
– ±100 kV/μs typical CMTI
Wide supply range: 2.25 V to 5.5 V
2.25 V to 5.5 V Level translation
Default output high (ISO7710) and low (ISO7710F)
options
Low power consumption, typical 1.7 mA at
1 Mbps
Low propagation delay: 11 ns Typical
(5-V Supplies)
Robust electromagnetic compatibility (EMC)
– System-level ESD, EFT, and surge immunity
– ±8 kV IEC 61000-4-2 contact discharge
protection across isolation barrier
– Low emissions
Wide-SOIC (DW-16) and narrow-SOIC (D-8)
package options
Section 6.7
– VDE reinforced insulation per DIN VDE V
0884-11:2017-01
– UL 1577 component recognition program
– IEC 60950-1, IEC 62368-1, IEC 61010-1, IEC
60601-1 and GB 4943.1-2011 certifications
2 Applications
•
The
ISO7710-Q1
device
provides
high
electromagnetic immunity and low emissions at low
power consumption, while isolating CMOS or
LVCMOS digital I/Os. The isolation channel has a
logic input and output buffer separated by a double
capacitive silicon dioxide (SiO 2) insulation barrier. In
the event of input power or signal loss, default output
is high for a device without suffix F and low for a
device with suffix F. See the Device Functional Modes
section for further details.
Used in conjunction with isolated power supplies, the
device helps prevent noise currents on data buses,
such as CAN and LIN, or other circuits from entering
the local ground and interfering with or damaging
sensitive circuitry. Through innovative chip design and
layout techniques, the electromagnetic compatibility of
the ISO7710-Q1 device has been significantly
enhanced to ease system-level ESD, EFT, surge, and
emissions compliance. The ISO7710-Q1 device is
available in 16-pin SOIC wide-body (DW) and 8-pin
SOIC narrow-body (D) packages.
Device Information
PART NUMBER (1)
ISO7710-Q1
(1)
PACKAGE
BODY SIZE (NOM)
SOIC (D)
4.90 mm × 3.91 mm
SOIC (DW)
10.30 mm × 7.50 mm
For all available packages, see the orderable addendum at
the end of the data sheet.
VCC1
Series Isolation
Capacitors
VCC2
OUT
IN
GND2
GND1
Hybrid, electric and power train system (EV/HEV)
– Battery management system (BMS)
– On-board charger
– Traction inverter
– DC/DC converter
– Inverter and motor control
Copyright © 2019, Texas Instruments Incorporated
Simplified Schematic
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
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Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................4
6 Specifications.................................................................. 6
6.1 Absolute Maximum Ratings........................................ 6
6.2 ESD Ratings .............................................................. 6
6.3 Recommended Operating Conditions.........................6
6.4 Thermal Information....................................................7
6.5 Power Ratings.............................................................7
6.6 Insulation Specifications............................................. 8
6.7 Safety-Related Certifications...................................... 9
6.8 Safety Limiting Values.................................................9
6.9 Electrical Characteristics—5-V Supply......................11
6.10 Supply Current Characteristics—5-V Supply.......... 11
6.11 Electrical Characteristics—3.3-V Supply.................12
6.12 Supply Current Characteristics—3.3-V Supply....... 12
6.13 Electrical Characteristics—2.5-V Supply................ 13
6.14 Supply Current Characteristics—2.5-V Supply....... 13
6.15 Switching Characteristics—5-V Supply...................14
6.16 Switching Characteristics—3.3-V Supply................14
6.17 Switching Characteristics—2.5-V Supply................14
6.18 Insulation Characteristics Curves........................... 15
6.19 Typical Characteristics............................................ 16
7 Parameter Measurement Information.......................... 18
8 Detailed Description......................................................19
8.1 Overview................................................................... 19
8.2 Functional Block Diagram......................................... 19
8.3 Feature Description...................................................20
8.4 Device Functional Modes..........................................21
9 Application and Implementation.................................. 22
9.1 Application Information............................................. 22
9.2 Typical Application.................................................... 22
10 Power Supply Recommendations..............................25
11 Layout........................................................................... 26
11.1 Layout Guidelines................................................... 26
11.2 Layout Example...................................................... 26
12 Device and Documentation Support..........................27
12.1 Documentation Support.......................................... 27
12.2 Related Links.......................................................... 27
12.3 Receiving Notification of Documentation Updates..27
12.4 Support Resources................................................. 27
12.5 Trademarks............................................................. 27
12.6 Electrostatic Discharge Caution..............................27
12.7 Glossary..................................................................27
13 Mechanical, Packaging, and Orderable
Information.................................................................... 27
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (April 2020) to Revision B (October 2020)
Page
• Added Functional Safety bullets in Section 1 .................................................................................................... 1
Changes from Revision * (March 2017) to Revision A (April 2020)
Page
• Made editorial and cosmetic changes throughout the document ...................................................................... 1
• Changed From: "Isolation Barrier Life: >40 Years" To: " >100-year projected lifetime at 1500 VRMS working
voltage" in Section 1 .......................................................................................................................................... 1
• Added "Up to 5000 VRMS isolation rating" in Section 1 ......................................................................................1
• Added "Up to 12.8 kV surge capability" in Section 1 ......................................................................................... 1
• Added "±8 kV IEC 61000-4-2 contact discharge protection across isolation barrier" in Section 1 .................... 1
• Changed From: "VDE Reinforced Insulation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12" To: "VDE
reinforced insulation per DIN VDE V 0884-11:2017-01" in Section 1 ................................................................ 1
• Combined CSA, CQC, and TUV bullets into a single bullet with standard names in Section 1 .........................1
• Deleted "VDE, UL, CSA, and TUV Certifications for DW-16 package complete; all other certifications
planned" bullet in Section 1 ............................................................................................................................... 1
• Updated list of applications in Section 2 section.................................................................................................1
• Updated Figure 3-1 to show two isolation capacitors in series instead of a single isolation capacitor .............. 1
• Added "Contact discharge per IEC 61000-4-2" specification of ±8000 V in Section 6.2 table .......................... 6
• Changed 'Signaling' rate to 'Data' rate and added table note to Data rate specification in Section 6.3 table ....6
• Changed VIORM Value for DW-16 package From: "1414 VPK" To: "2121 VPK" in Section 6.6 table ................... 8
• Changed VIOWM value for DW-16 package From: "1000 VRMS" and "1414 VDC" To: "1500 VRMS" and "2121 V
DC" in Section 6.6 table ...................................................................................................................................... 8
• Added 'see Figure 9-5" to TEST CONDITIONS of VIOWM specification .............................................................8
2
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•
•
•
•
•
•
•
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Changed VIOTM TEST CONDITIONS for 100% production test From: "VTEST = VIOTM" To: "VTEST = 1.2 x V
IOTM" in Section 6.6 table ................................................................................................................................... 8
Changed VIOSM TEST CONDITIONS From: "Test method per IEC 60065" To: "Test method per IEC 62368-1"
in Section 6.6 table ............................................................................................................................................ 8
Updated certification information in Section 6.7 table ........................................................................................9
Corrected ground symbols for "Input (Devices with F suffix)" in Section 8.4.1 ................................................ 21
Fixed Figure 9-2 INPUT wire connection .........................................................................................................23
Added Section 9.2.3.1 sub-section under Section 9.2.3 section ..................................................................... 23
Added 'How to use isolation to improve ESD, EFT, and Surge immunity in industrial systems' to Section 12.1
section ............................................................................................................................................................. 27
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5 Pin Configuration and Functions
GND1 1
16 GND2
2
15
VCC1
3
14 VCC2
IN
4
NC
5
NC
ISOLATION
NC
NC
13 OUT
12
NC
6
11
NC
GND1 7
10
NC
NC
8
9 GND2
Figure 5-1. DW Package 16-Pin SOIC Top View
4
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1
IN
2
VCC1
3
8 VCC2
ISOLATION
VCC1
GND1 4
7
NC
6 OUT
5 GND2
Figure 5-2. D Package 8-Pin SOIC Top View
Table 5-1. Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
DW
D
VCC1
3
1, 3
—
Power supply, VCC1
VCC2
14
8
—
Power supply, VCC2
GND1
1, 7
4
—
Ground connection for VCC1
GND2
9, 16
5
—
Ground connection for VCC2
4
2
I
Input channel
13
6
O
Output channel
2, 5, 6, 8, 10 ,11, 12,
15
7
—
Not connect pin; it has no internal connection
IN
OUT
NC
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6 Specifications
6.1 Absolute Maximum Ratings
See (1)
VCC1, VCC2
Supply voltage(2)
MIN
MAX
UNIT
–0.5
6
V
V
Voltage at IN, OUT
–0.5
IO
Output Current
–15
15
TJ
Junction temperature
150
°C
Tstg
Storage temperature
–65
150
°C
(1)
(2)
(3)
VCC +
0.5(3)
V
mA
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
All voltage values except differential I/O bus voltages are with respect to the local ground terminal (GND1 or GND2) and are peak
voltage values.
Maximum voltage must not exceed 6 V.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
(3)
Electrostatic discharge
Human-body model (HBM), per AEC Q100-002(1)
±6000
Charged-device model (CDM), per AEC Q100-011
±1500
Contact discharge per IEC 61000-4-2; Isolation barrier withstand
test(2) (3)
±8000
UNIT
V
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
IEC ESD strike is applied across the barrier with all pins on each side tied together creating a two-terminal device.
Testing is carried out in air or oil to determine the intrinsic contact discharge capability of the device.
6.3 Recommended Operating Conditions
MIN
VCC1, VCC2
Supply voltage
VCC(UVLO+)
UVLO threshold when supply voltage is rising
MAX
5.5
V
2
2.25
V
2.25
UNIT
VCC(UVLO-)
UVLO threshold when supply voltage is falling
1.7
1.8
V
VHYS(UVLO)
Supply voltage UVLO hysteresis
100
200
mV
IOH
High-level output current
IOL
Low-level output current
VCC2 = 5 V
–4
VCC2 = 3.3 V
–2
VCC2 = 2.5 V
–1
mA
VCC2 = 5 V
4
VCC2 = 3.3 V
2
VCC2 = 2.5 V
1
mA
VIH
High-level input voltage
0.7 × VCC1
VCC1
V
VIL
Low-level input voltage
0
0.3 × VCC1
V
DR(1)
Data rate
TA
Ambient temperature
(1)
6
NOM
0
–40
25
100
Mbps
125
°C
100 Mbps is the maximum specified data rate, although higher data rates are possible.
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6.4 Thermal Information
ISO7710-Q1
THERMAL
METRIC(1)
DW (SOIC)
D (SOIC)
(16-Pin)
(8-Pin)
UNIT
RθJA
Junction-to-ambient thermal resistance
94.4
146.1
°C/W
RθJC(top)
Junction-to-case(top) thermal resistance
57.3
63.1
°C/W
RθJB
Junction-to-board thermal resistance
57.1
80.0
°C/W
ψJT
Junction-to-top characterization parameter
40.0
9.6
°C/W
ψJB
Junction-to-board characterization parameter
56.8
79.0
°C/W
RθJC(bottom)
Junction-to-case(bottom) thermal resistance
n/a
n/a
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Power Ratings
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
PD
Maximum power dissipation
VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL = 15 pF,
input a 50 MHz 50% duty cycle square wave
50
mW
PD1
Maximum power dissipation by side-1
VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL = 15 pF,
input a 50 MHz 50% duty cycle square wave
12.5
mW
PD2
Maximum power dissipation by side-2
VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL = 15 pF,
input a 50 MHz 50% duty cycle square wave
37.5
mW
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6.6 Insulation Specifications
PARAMETER
VALUE
TEST CONDITIONS
DW-16
D-8
UNIT
CLR
External clearance (1)
Shortest terminal-to-terminal distance through air
8
4
mm
CPG
External creepage (1)
Shortest terminal-to-terminal distance across the
package surface
8
4
mm
DTI
Distance through the insulation
Minimum internal gap (internal clearance)
21
21
μm
CTI
Comparative tracking index
DIN EN 60112 (VDE 0303-11); IEC 60112; UL 746A
>600
>600
V
Material group
According to IEC 60664-1
Overvoltage category per IEC 60664-1
I
I
Rated mains voltage ≤ 150 VRMS
I–IV
I–IV
Rated mains voltage ≤ 300 VRMS
I–IV
I–III
Rated mains voltage ≤ 600 VRMS
I–IV
n/a
Rated mains voltage ≤ 1000 VRMS
I–III
n/a
AC voltage (bipolar)
2121
637
VPK
AC voltage; Time dependent dielectric breakdown
(TDDB) test; see Figure 9-5
1500
450
VRMS
DC voltage
2121
637
VDC
DIN VDE V 0884-11:2017-01(2)
VIORM
Maximum repetitive peak isolation
voltage
VIOWM
Maximum working isolation voltage
VIOTM
Maximum transient isolation voltage
VTEST = VIOTM, t = 60 s (qualification);
VTEST = 1.2 x VIOTM, t = 1 s (100% production)
8000
4242
VPK
VIOSM
Maximum surge isolation voltage(3)
Test method per IEC 62368-1, 1.2/50 µs waveform,
VTEST = 1.6 × VIOSM (qualification)
8000
5000
VPK
Method a, After Input/Output safety test subgroup 2/3,
Vini = VIOTM, tini = 60 s; Vpd(m) = 1.2 × VIORM, tm = 10 s
≤5
≤5
Method a, After environmental tests subgroup 1,
Vini = VIOTM, tini = 60 s; Vpd(m) = 1.6 × VIORM, tm = 10 s
≤5
≤5
Method b1; At routine test (100% production) and
preconditioning (type test)
Vini = 1.2 x VIOTM, tini = 1 s;
Vpd(m) = 1.875 × VIORM, tm = 1 s
≤5
≤5
VIO = 0.4 × sin (2πft), f = 1 MHz
~0.4
~0.4
VIO = 500 V, TA = 25°C
>1012
>1012
VIO = 500 V, 100°C ≤ TA ≤ 125°C
>1011
>1011
VIO = 500 V at TS = 150°C
>109
>109
Pollution degree
2
2
Climatic category
55/125/21
55/125/21
5000
3000
Apparent charge(4)
qpd
Barrier capacitance, input to output(5)
CIO
Isolation resistance(5)
RIO
pC
pF
Ω
UL 1577
VISO
(1)
(2)
(3)
(4)
(5)
8
Withstanding isolation voltage
VTEST = VISO, t = 60 s (qualification);
VTEST = 1.2 × VISO, t = 1 s (100% production)
VRMS
Creepage and clearance requirements should be applied according to the specific equipment isolation standards of an application.
Care should be taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the
isolator on the printed-circuit board do not reduce this distance. Creepage and clearance on a printed-circuit board become equal in
certain cases. Techniques such as inserting grooves and/or ribs on a printed circuit board are used to help increase these
specifications.
This coupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured
by means of suitable protective circuits.
Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier.
Apparent charge is electrical discharge caused by a partial discharge (pd).
All pins on each side of the barrier tied together creating a two-terminal device.
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6.7 Safety-Related Certifications
VDE
Certified according to
DIN VDE V
0884-11:2017-01 1
CSA
UL
Certified according to IEC
60950-1, IEC 62368-1 and
IEC 60601-1
Certified according to
UL 1577 Component
Recognition Program
CQC
TUV
Certified according to
GB4943.1-2011
Certified according to EN
61010-1:2010/A1:2019,
EN 60950-1:2006/A2:2013
and EN 62368-1:2014
5000 VRMS (DW-16) and
3000 VRMS (D-8)
Reinforced insulation per
EN 61010-1:2010/A1:2019
up to working voltage of
600 VRMS (DW-16) and
300 VRMS (D-8)
5000 VRMS (DW-16) and
3000 VRMS (D-8)
Reinforced insulation per
EN 60950-1:2006/A2:2013
and EN 62368-1:2014 up
to working voltage of 800
VRMS (DW-16) and 400 V
RMS (D-8)
Reinforced insulation per
CSA 60950-1-07+A1+A2,
IEC 60950-1 2nd
Maximum transient
isolation voltage, 8000 V Ed.+A1+A2, CSA
62368-1-14 and IEC
PK (DW-16, Reinforced)
62368-1:2014,
and 4242 VPK (D-8);
Maximum repetitive peak 800 VRMS (DW-16) and 400
isolation voltage, 2121 V VRMS (D-8) max working
voltage (pollution degree 2,
PK (DW-16, Reinforced)
and 637 VPK (D-8);
material group I);
Maximum surge isolation 2 MOPP (Means of Patient
voltage, 8000 VPK
Protection) per CSA
(DW-16, Reinforced) and 60601-1:14 and IEC
5000 VPK (D-8)
60601-1 Ed. 3.1, 250 VRMS
(DW-16) max working
voltage
DW-16: Single
protection, 5000 VRMS ;
D-8: Single protection,
3000 VRMS
DW-16: Reinforced
Insulation, Altitude ≤ 5000
m, Tropical Climate, 700 V
RMS maximum working
voltage;
D-8: Basic Insulation,
Altitude ≤ 5000 m, Tropical
Climate, 400 VRMS
maximum working voltage
Certificate number:
40040142
File number: E181974
Certificate numbers:
CQC15001121716 (DW-16) Client ID number: 77311
CQC15001121656 (D-8)
Master contract number:
220991
6.8 Safety Limiting Values
Safety limiting intends to minimize potential damage to the isolation barrier upon failure of input or output circuitry. A failure of
the I/O can allow low resistance to ground or the supply and, without current limiting, dissipate sufficient power to overheat
the die and damage the isolation barrier potentially leading to secondary system failures.
PARAMETER
TEST CONDITIONS
MIN TYP
MAX UNIT
DW-16 Package
IS
Safety input, output, or
supply current
PS
Safety input, output, or
total power
TS
Maximum safety
temperature
RθJA = 94.4 °C/W, VI = 5.5 V, TJ = 150°C, TA = 25°C, see Figure 6-1
241
RθJA = 94.4 °C/W, VI = 3.6 V, TJ = 150°C, TA = 25°C, see Figure 6-1
368
RθJA = 94.4 °C/W, VI = 2.75 V, TJ = 150°C, TA = 25°C,
see Figure 6-1
482
RθJA = 94.4 °C/W, TJ = 150°C, TA = 25°C, see Figure 6-2
mA
1324
mW
150
°C
D-8 Package
IS
Safety input, output, or
supply current
PS
Safety input, output, or
total power
TS
Maximum safety
temperature
RθJA = 146.1 °C/W, VI = 5.5 V, TJ = 150°C, TA = 25°C, see Figure 6-3
156
RθJA = 146.1 °C/W, VI = 3.6 V, TJ = 150°C, TA = 25°C,
see Figure 6-3
238
RθJA = 146.1 °C/W, VI = 2.75 V, TJ = 150°C, TA = 25°C, see Figure
6-3
311
RθJA = 146.1 °C/W, TJ = 150°C, TA = 25°C, see Figure 6-4
856
mW
150
°C
mA
The maximum safety temperature is the maximum junction temperature specified for the device. The power
dissipation and junction-to-air thermal impedance of the device installed in the application hardware determines
the junction temperature. The assumed junction-to-air thermal resistance in the Section 6.4 table is that of a
device installed on a High-K test board for leaded surface mount packages. The power is the recommended
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maximum input voltage times the current. The junction temperature is then the ambient temperature plus the
power times the junction-to-air thermal resistance.
10
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6.9 Electrical Characteristics—5-V Supply
VCC1 = VCC2 = 5 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
VCC2 – 0.4
4.8
VOH
High-level output voltage
IOH = –4 mA; see Figure 7-1
VOL
Low-level output voltage
IOL = 4 mA; see Figure 7-1
VIT+(IN)
Rising input threshold voltage
VIT-(IN)
Falling input threshold voltage
0.3 x VCC1
0.4 x VCC1
VI(HYS)
Input threshold voltage hysteresis
0.1 × VCC1
0.2 × VCC1
IIH
High-level input current
VIH = VCC1 at IN
VIL = 0 V at IN
IIL
Low-level input current
Common-mode transient immunity VI = VCC1 or 0 V, VCM = 1200 V; see Figure 7-3
CI
Input Capacitance(1)
UNIT
V
0.2
0.4
V
0.6 x VCC1
0.7 x VCC1
V
V
V
10
CMTI
(1)
MAX
–10
μA
μA
85
100
VI = VCC/ 2 + 0.4×sin(2πft), f = 1 MHz, VCC = 5 V
kV/μs
2
pF
Measured from input pin to ground.
6.10 Supply Current Characteristics—5-V Supply
VCC1 = VCC2 = 5 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER
SUPPLY
CURRENT
TEST CONDITIONS
TYP
MAX
0.8
VI = VCC1 (ISO7710-Q1), VI = 0 V (ISO7710-Q1 with F
suffix)
ICC1
0.5
ICC2
0.6
1
VI = 0 V (ISO7710-Q1), VI = VCC1 (ISO7710-Q1 with F
suffix)
ICC1
1.6
2.5
Supply current - DC signal
1 Mbps
Supply current - AC signal
MIN
All channels switching with square
wave clock input; CL = 15 pF
10 Mbps
100 Mbps
ICC2
0.6
1
ICC1
1.1
1.5
ICC2
0.6
1.1
ICC1
1.1
1.6
ICC2
1.1
1.6
ICC1
1.4
2
ICC2
5.9
7
UNIT
mA
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6.11 Electrical Characteristics—3.3-V Supply
VCC1 = VCC2 = 3.3 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
VCC2 – 0.3
3.2
VOH
High-level output voltage
IOH = –2 mA; see Figure 7-1
VOL
Low-level output voltage
IOL = 2 mA; see Figure 7-1
VIT+(IN)
Rising input voltage threshold
VIT-(IN)
Falling input voltage threshold
0.3 x VCC1
0.4 x VCC1
VI(HYS)
Input threshold voltage hysteresis
0.1 × VCC1
0.2 × VCC1
IIH
High-level input current
VIH = VCC1 at IN
IIL
Low-level input current
VIL = 0 V at IN
CMTI
Common-mode transient immunity VI = VCC1 or 0 V, VCM = 1200 V; see Figure 7-3
MAX
UNIT
V
0.1
0.3
V
0.6 x VCC1
0.7 x VCC1
V
V
V
10
–10
μA
μA
85
100
kV/μs
6.12 Supply Current Characteristics—3.3-V Supply
VCC1 = VCC2 = 3.3 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER
SUPPLY
CURRENT
TEST CONDITIONS
MAX
0.5
0.8
ICC1
ICC2
0.6
1
VI = 0 V (ISO7710-Q1), VI = VCC1 (ISO7710-Q1 with F
suffix)
ICC1
1.6
2.5
1 Mbps
All channels switching with square
wave clock input; CL = 15 pF
10 Mbps
100 Mbps
12
TYP
VI = VCC1 (ISO7710-Q1), VI = 0 V (ISO7710-Q1 with F
suffix)
Supply current - DC signal
Supply current - AC signal
MIN
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ICC2
0.6
1
ICC1
1.1
1.5
ICC2
0.6
1
ICC1
1
1.6
ICC2
1.1
1.4
ICC1
1.3
1.8
ICC2
4.3
5.3
UNIT
mA
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6.13 Electrical Characteristics—2.5-V Supply
VCC1 = VCC2 = 2.5 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER
TEST CONDITIONS
VOH
High-level output voltage
IOH = –1 mA; see Figure 7-1
VOL
Low-level output voltage
IOL = 1 mA; see Figure 7-1
VIT+(IN)
Rising input voltage threshold
MIN
TYP
VCC2 – 0.2
2.45
MAX
UNIT
V
0.05
0.2
V
0.6 x VCC1
0.7 x VCC1
V
VIT-(IN)
Falling input voltage threshold
0.3 x VCC1
0.4 x VCC1
V
VI(HYS)
Input threshold voltage hysteresis
0.1 × VCC1
0.2 × VCC1
V
IIH
High-level input current
VIH = VCC1 at IN
IIL
Low-level input current
VIL = 0 V at IN
10
CMTI
Common-mode transient immunity VI = VCC1 or 0 V, VCM = 1200 V; see Figure 7-3
–10
μA
μA
85
100
kV/μs
6.14 Supply Current Characteristics—2.5-V Supply
VCC1 = VCC2 = 2.5 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER
SUPPLY
CURRENT
TEST CONDITIONS
TYP
MAX
0.8
VI = VCC1 (ISO7710-Q1), VI = 0 V (ISO7710-Q1 with F
suffix)
ICC1
0.5
ICC2
0.6
1
VI = 0 V (ISO7710-Q1), VI = VCC1 (ISO7710-Q1 with F
suffix)
ICC1
1.6
2.5
Supply current - DC signal
1 Mbps
Supply current - AC signal
MIN
All channels switching with square
wave clock input; CL = 15 pF
10 Mbps
100 Mbps
ICC2
0.6
1
ICC1
1.1
1.5
ICC2
0.6
1
ICC1
1.1
1.5
ICC2
0.9
1.4
ICC1
1.2
1.6
ICC2
3.4
4.4
UNIT
mA
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6.15 Switching Characteristics—5-V Supply
VCC1 = VCC2 = 5 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER
tPLH, tPHL
Propagation delay time
PWD
Pulse width distortion(1) |tPHL – tPLH|
tsk(pp)
Part-to-part skew time(2)
TEST CONDITIONS
See Figure 7-1
tr
Output signal rise time
tf
Output signal fall time
tDO
Default output delay time from input power loss
Measured from the time VCC1 goes below 1.7 V.
See Figure 7-2
tie
Time interval error
216 – 1 PRBS data at 100 Mbps
(1)
(2)
MIN
TYP
MAX
6
11
16
0.6
4.9
ns
4.5
ns
See Figure 7-1
UNIT
ns
1.8
3.9
ns
1.9
3.9
ns
0.1
0.3
μs
1
ns
Also known as pulse skew.
tsk(pp) is the magnitude of the difference in propagation delay times between terminals of different devices switching in the same
direction while operating at identical supply voltages, temperature, input signals and loads.
6.16 Switching Characteristics—3.3-V Supply
VCC1 = VCC2 = 3.3 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER
TEST CONDITIONS
tPLH, tPHL
Propagation delay time
PWD
Pulse width distortion(1) |tPHL – tPLH|
tsk(pp)
Part-to-part skew time(2)
tr
Output signal rise time
tf
Output signal fall time
tDO
Default output delay time from input power loss
Measured from the time VCC1 goes below 1.7 V.
See Figure 7-2
Time interval error
216
tie
(1)
(2)
MIN
6
See Figure 7-1
See Figure 7-1
– 1 PRBS data at 100 Mbps
TYP
MAX
UNIT
11
16
ns
0.1
5
ns
4.5
ns
0.7
3
ns
0.7
3
ns
0.1
0.3
μs
1
ns
Also known as pulse skew.
tsk(pp) is the magnitude of the difference in propagation delay times between terminals of different devices switching in the same
direction while operating at identical supply voltages, temperature, input signals and loads.
6.17 Switching Characteristics—2.5-V Supply
VCC1 = VCC2 = 2.5 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER
tPLH, tPHL
Propagation delay time
PWD
Pulse width distortion(1) |tPHL – tPLH|
tsk(pp)
Part-to-part skew time(2)
TEST CONDITIONS
See Figure 7-1
tr
Output signal rise time
tf
Output signal fall time
t DO
Default output delay time from input power loss
Measured from the time VCC1 goes below 1.7 V.
See Figure 7-2
tie
Time interval error
216 – 1 PRBS data at 100 Mbps
(1)
(2)
14
See Figure 7-1
MIN
TYP
MAX
UNIT
7.5
12
18.5
ns
0.2
5.1
ns
4.6
ns
1
3.5
ns
1
3.5
ns
0.1
0.3
μs
1
ns
Also known as pulse skew.
tsk(pp) is the magnitude of the difference in propagation delay times between terminals of different devices switching in the same
direction while operating at identical supply voltages, temperature, input signals and loads.
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6.18 Insulation Characteristics Curves
1400
VCC1 = VCC2 = 2.75 V
VCC1 = VCC2 = 3.6 V
VCC1 = VCC2 = 5.5 V
500
1200
Safety Limiting Power (mW)
Safety Limiting Current (mA)
600
400
300
200
100
800
600
400
200
0
0
0
50
100
150
Ambient Temperature (qC)
0
200
D001
Figure 6-1. Thermal Derating Curve for Limiting
Current per VDE for DW-16 Package
50
100
150
Ambient Temperature (qC)
200
D002
Figure 6-2. Thermal Derating Curve for Limiting
Power per VDE for DW-16 Package
900
350
VCC1 = VCC2 = 2.75 V
VCC1 = VCC2 = 3.6 V
VCC1 = VCC2 = 5.5 V
800
Safety Limiting Power (mW)
300
Safety Limiting Current (mA)
1000
250
200
150
100
50
700
600
500
400
300
200
100
0
0
0
20
40
60
80
100
120
Ambient Temperature (qC)
140
160
0
D003
Figure 6-3. Thermal Derating Curve for Limiting
Current per VDE for D-8 Package
50
100
150
Ambient Temperature (qC)
200
D004
Figure 6-4. Thermal Derating Curve for Limiting
Power per VDE for D-8 Package
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6.19 Typical Characteristics
7
2.5
ICC1 at 2.5 V
ICC2 at 2.5 V
ICC1 at 3.3 V
ICC1 at 2.5 V
ICC2 at 2.5 V
ICC1 at 3.3 V
2
5
Supply Current (mA)
Supply Current (mA)
6
ICC2 at 3.3 V
ICC1 at 5 V
ICC2 at 5 V
4
3
2
ICC2 at 3.3 V
ICC1 at 5 V
ICC2 at 5 V
1.5
1
0.5
1
0
0
0
25
TA = 25°C
50
Data Rate (Mbps)
75
0
100
25
D005
TA = 25°C
CL = 15 pF
Figure 6-5. ISO7710-Q1 Supply Current vs Data
Rate
(With 15 pF Load)
50
Data Rate (Mbps)
75
100
D006
CL = No Load
Figure 6-6. ISO7710-Q1 Supply Current vs Data
Rate
(With No Load)
0.9
6
Low-Level Output Voltage (V)
High-Level Output Voltage (V)
0.8
5
4
3
2
VCC at 2.5 V
VCC at 3.3 V
VCC at 5 V
1
0
-15
-10
-5
High-Level Output Current (mA)
TA = 25°C
0.7
0.6
0.5
0.4
0.3
0.2
VCC at 2.5 V
VCC at 3.3 V
VCC at 5 V
0.1
0
0
0
5
10
Low-Level Output Current (mA)
D011
15
D012
TA = 25°C
Figure 6-7. High-Level Output Voltage vs High-level Figure 6-8. Low-Level Output Voltage vs Low-Level
Output Current
Output Current
16
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14
2.05
Propagation Delay Time (ns)
Power Supply UVLO Threshold (V)
2.10
2.00
1.95
1.90
1.85
1.80
1.75
VCC1 Rising
VCC1 Falling
VCC2 Rising
VCC2 Falling
1.70
1.65
1.60
-55 -40 -25 -10
5 20 35 50 65 80
Free-Air Temperature (qC)
95 110 125
13
12
11
10
8
-55
D009
Figure 6-9. Power Supply Undervoltage Threshold
vs
Free-Air Temperature
tPLH at 2.5 V
tPHL at 2.5 V
tPLH at 3.3 V
9
-25
5
35
65
Free Air Temperature (qC)
tPHL at 3.3 V
tPLH at 5 V
tPHL at 5 V
95
125
D010
Figure 6-10. Propagation Delay Time vs Free-Air
Temperature
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7 Parameter Measurement Information
Isolation Barrier
IN
Input Generator
(See Note A)
VI
VCC1
VI
OUT
50%
50%
0V
tPLH
CL
See Note B
VO
50
tPHL
VOH
90%
50%
VO
50%
10%
VOL
tf
tr
A. The input pulse is supplied by a generator having the following characteristics: PRR ≤ 50 kHz, 50% duty cycle, tr ≤ 3 ns, tf ≤ 3ns, ZO = 50
Ω. At the input, 50 Ω resistor is required to terminate Input Generator signal. It is not needed in actual application.
B. CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 7-1. Switching Characteristics Test Circuit and Voltage Waveforms
VI
See Note B
VCC
VCC
Isolation Barrier
IN = 0 V (Devices without suffix F)
IN = VCC (Devices with suffix F)
VI
IN
1.7 V
0V
OUT
VO
tDO
CL
See Note A
default high
VOH
50%
VO
VOL
default low
A. CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
B. Power Supply Ramp Rate = 10 mV/ns
Figure 7-2. Default Output Delay Time Test Circuit and Voltage Waveforms
VCC1
VCC1
S1
Isolation Barrier
C = 0.1 µF ±1%
IN
C = 0.1 µF ±1%
Pass-fail criteria:
The output must
remain stable.
OUT
+
EN
CL
See Note A
GND1
+
VCM ±
VOH or VOL
±
GND2
A. CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 7-3. Common-Mode Transient Immunity Test Circuit
18
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8 Detailed Description
8.1 Overview
The ISO7710-Q1 device has an ON-OFF keying (OOK) modulation scheme to transmit the digital data across a
silicon dioxide based isolation barrier. The transmitter sends a high frequency carrier across the barrier to
represent one digital state and sends no signal to represent the other digital state. The receiver demodulates the
signal after advanced signal conditioning and produces the output through a buffer stage. The device also
incorporates advanced circuit techniques to maximize the CMTI performance and minimize the radiated
emissions due the high frequency carrier and IO buffer switching. The conceptual block diagram of a digital
capacitive isolator, Figure 8-1, shows a functional block diagram of a typical channel.
8.2 Functional Block Diagram
Receiver
Transmitter
TX IN
OOK
Modulation
TX Signal
Conditioning
Oscillator
SiO2 based
Capacitive
Isolation
Barrier
RX Signal
Conditioning
Envelope
Detection
RX OUT
Emissions
Reduction
Techniques
Figure 8-1. Conceptual Block Diagram of a Digital Capacitive Isolator
Figure 8-2 shows a conceptual detail of how the OOK scheme works.
TX IN
Carrier signal through
isolation barrier
RX OUT
Figure 8-2. On-Off Keying (OOK) Based Modulation Scheme
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8.3 Feature Description
The ISO7710-Q1 device is available in two default output state options to enable a variety of application uses.
Table 8-1 lists the device features.
Table 8-1. Device Features
PART NUMBER
MAXIMUM DATA
RATE
CHANNEL
DIRECTION
DEFAULT OUTPUT
STATE
ISO7710-Q1
100 Mbps
1 Forward, 0 Reverse
High
ISO7710-Q1 with
F suffix
100 Mbps
1 Forward, 0 Reverse
Low
(1)
PACKAGE
RATED ISOLATION(1)
DW-16
5000 VRMS / 8000 VPK
D-8
3000 VRMS / 4242 VPK
DW-16
5000 VRMS / 8000 VPK
D-8
3000 VRMS / 4242 VPK
See the Section 6.7 section for detailed isolation ratings.
8.3.1 Electromagnetic Compatibility (EMC) Considerations
Many applications in harsh industrial environment are sensitive to disturbances such as electrostatic discharge
(ESD), electrical fast transient (EFT), surge and electromagnetic emissions. These electromagnetic disturbances
are regulated by international standards such as IEC 61000-4-x and CISPR 22. Although system-level
performance and reliability depends, to a large extent, on the application board design and layout, the ISO7710Q1 device incorporates many chip-level design improvements for overall system robustness. Some of these
improvements include:
• Robust ESD protection cells for input and output signal pins and inter-chip bond pads.
• Low-resistance connectivity of ESD cells to supply and ground pins.
• Enhanced performance of high voltage isolation capacitor for better tolerance of ESD, EFT and surge events.
• Bigger on-chip decoupling capacitors to bypass undesirable high energy signals through a low impedance
path.
• PMOS and NMOS devices isolated from each other by using guard rings to avoid triggering of parasitic
SCRs.
• Reduced common mode currents across the isolation barrier by ensuring purely differential internal operation.
20
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8.4 Device Functional Modes
Table 8-2 lists the functional modes of ISO7710-Q1 device.
Table 8-2. Function Table
VCC1
(1)
VCC2
PU
(1)
(2)
(3)
INPUT
(IN)(3)
OUTPUT
(OUT)
H
H
L
L
Open
Default
Default mode: When IN is open, the corresponding channel output goes to its
default logic state. Default is High for ISO7710-Q1 and Low for ISO7710-Q1
with F suffix.
Default mode: When VCC1 is unpowered, a channel output assumes the logic
state based on the selected default option. Default is High for ISO7710-Q1 and
Low for ISO7710-Q1 with F suffix.
When VCC1 transitions from unpowered to powered-up, a channel output
assumes the logic state of its input.
When VCC1 transitions from powered-up to unpowered, channel output
assumes the selected default state.
COMMENTS
Normal Operation:
A channel output assumes the logic state of its input.
PU
PD
PU
X
Default
X
PD
X
Undetermined
When VCC2 is unpowered, a channel output is undetermined (2).
When VCC2 transitions from unpowered to powered-up, a channel output
assumes the logic state of its input
PU = Powered up (VCC ≥ 2.25 V); PD = Powered down (VCC ≤ 1.7 V); X = Irrelevant; H = High level; L = Low level
The outputs are in undetermined state when 1.7 V < VCC1, VCC2 < 2.25 V.
A strongly driven input signal can weakly power the floating VCC via an internal protection diode and cause undetermined output.
8.4.1 Device I/O Schematics
Input (Devices with F suffix)
Input (Devices without F suffix)
VCCI
VCCI
VCCI
VCCI
VCCI
VCCI
VCCI
1.5 M
985
985
INx
INx
1.5 M
Output
VCCO
~20
OUTx
Copyright © 2016, Texas Instruments Incorporated
Figure 8-3. Device I/O Schematics
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9 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification, and TI
does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes. Customers should validate and test their design
implementation to confirm system functionality.
9.1 Application Information
The ISO7710-Q1 device is a high-performance, single-channel digital isolator. The device uses single-ended
CMOS-logic switching technology. The supply voltage range is from 2.25 V to 5.5 V for both supplies, V CC1 and
V CC2. When designing with digital isolators, keep in mind that because of the single-ended design structure,
digital isolators do not conform to any specific interface standard and are only intended for isolating single-ended
CMOS or TTL digital signal lines. The isolator is typically placed between the data controller (that is, μC or
UART), and a data converter or a line transceiver, regardless of the interface type or standard.
9.2 Typical Application
The ISO7710-Q1 device can be used with Texas Instruments' mixed signal microcontroller, CAN transceiver,
transformer driver, and low-dropout voltage regulator to create an Isolated CAN Interface as shown below.
VS
3.3 V
10 F
2
Vcc
D2
1:1.33
3
MBR0520L
1
10 F 0.1 F
D1
4
ISO 3.3V
5
OUT
TPS76333-Q1
SN6501-Q1
GND
IN
3
1
EN
10 F
2
GND
MBR0520L
GND
5
ISO Barrier
0.1 F
5
4
GND2
0.1 F
6
8
29, 57
VDDIO
VCC2
0.1 F
IN
VCC1
0.1 F
3
2
1, 3
0.1 F
25
4
1
26
CANRXA
TMS320F28035PAGQ
CANTXA
VSS
GND1
OUT ISO7710-Q1
1, 3
2
6, 28
4
VCC1
IN
VCC
CANH
SN65HVD231Q
D
CANL
GND
0.1 F
VCC2
RS 8
R
2
8
10
(optional)
10
(optional)
7
6
Vref 5
SM712
ISO7710-Q1 OUT 6
GND2
GND1
5
4.7 nF /
2 kV
Copyright © 2017, Texas Instruments Incorporated
Figure 9-1. Isolated CAN Interface
22
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9.2.1 Design Requirements
To design with this device, use the parameters listed in Table 9-1.
Table 9-1. Design Parameters
PARAMETER
VALUE
Supply voltage, VCC1 and VCC2
2.25 V to 5.5 V
Decoupling capacitor between VCC1 and GND1
0.1 µF
Decoupling capacitor from VCC2 and GND2
0.1 µF
9.2.2 Detailed Design Procedure
Unlike optocouplers, which require components to improve performance, provide bias, or limit current, the
ISO7710-Q1 device only requires two external bypass capacitors to operate.
VCC1
VCC2
0.1 …F
2 mm
maximum
from VCC1
2 mm
maximum
from VCC2
1
2
INPUT
0.1 …F
8
IN
7
3
OUT 6
4
5
OUTPUT
GND1
GND2
Figure 9-2. Typical ISO7710-Q1 Circuit Hook-up
9.2.3 Application Curve
1 V/ div
The following typical eye diagram of the ISO7710-Q1 device indicates low jitter and wide open eye at the
maximum data rate of 100 Mbps.
Time = 3.5 ns / div
Figure 9-3. ISO7710-Q1 Eye Diagram at 100 Mbps PRBS, 5-V Supplies and 25°C
9.2.3.1 Insulation Lifetime
Insulation lifetime projection data is collected by using industry-standard Time Dependent Dielectric Breakdown
(TDDB) test method. In this test, all pins on each side of the barrier are tied together creating a two-terminal
device and high voltage applied between the two sides; See Figure 9-4 for TDDB test setup. The insulation
breakdown data is collected at various high voltages switching at 60 Hz over temperature. For reinforced
insulation, VDE standard requires the use of TDDB projection line with failure rate of less than 1 part per million
(ppm). Even though the expected minimum insulation lifetime is 20 years at the specified working isolation
voltage, VDE reinforced certification requires additional safety margin of 20% for working voltage and 87.5% for
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lifetime which translates into minimum required insulation lifetime of 37.5 years at a working voltage that's 20%
higher than the specified value.
Figure 9-5 shows the intrinsic capability of the isolation barrier to withstand high voltage stress over its lifetime.
Based on the TDDB data, the intrinsic capability of the insulation is 1500 VRMS with a lifetime of 135 years. Other
factors, such as package size, pollution degree, material group, etc. can further limit the working voltage of the
component. The working voltage of DW-16 package is specified up to 1500 V RMS and D-8 package up to 450 V
RMS. At the lower working voltages, the corresponding insulation lifetime is much longer than 135 years.
A
Vcc 1
Vcc 2
Time Counter
> 1 mA
DUT
GND 1
GND 2
VS
Oven at 150 °C
Figure 9-4. Test Setup for Insulation Lifetime Measurement
Figure 9-5. Insulation Lifetime Projection Data
24
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10 Power Supply Recommendations
To help ensure reliable operation at data rates and supply voltages, a 0.1-μF bypass capacitor is recommended
at the input and output supply pins (VCC1 and VCC2). The capacitors should be placed as close to the supply pins
as possible. If only a single primary-side power supply is available in an application, isolated power can be
generated for the secondary-side with the help of a transformer driver such as Texas Instruments' SN6501-Q1 .
For such applications, detailed power supply design and transformer selection recommendations are available in
SN6501-Q1 Transformer Driver for Isolated Power Supplies .
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ISO7710-Q1
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11 Layout
11.1 Layout Guidelines
A minimum of four layers is required to accomplish a low EMI PCB design (see Figure 11-1). Layer stacking
should be in the following order (top-to-bottom): high-speed signal layer, ground plane, power plane and lowfrequency signal layer.
•
•
•
•
Routing the high-speed traces on the top layer avoids the use of vias (and the introduction of their
inductances) and allows for clean interconnects between the isolator and the transmitter and receiver circuits
of the data link.
Placing a solid ground plane next to the high-speed signal layer establishes controlled impedance for
transmission line interconnects and provides an excellent low-inductance path for the return current flow.
Placing the power plane next to the ground plane creates additional high-frequency bypass capacitance of
approximately 100 pF/in2.
Routing the slower speed control signals on the bottom layer allows for greater flexibility as these signal links
usually have margin to tolerate discontinuities such as vias.
If an additional supply voltage plane or signal layer is needed, add a second power or ground plane system to
the stack to keep it symmetrical. This makes the stack mechanically stable and prevents it from warping. Also
the power and ground plane of each power system can be placed closer together, thus increasing the highfrequency bypass capacitance significantly.
For detailed layout recommendations, refer to the Digital Isolator Design Guide.
11.1.1 PCB Material
For digital circuit boards operating at less than 150 Mbps, (or rise and fall times greater than 1 ns), and trace
lengths of up to 10 inches, use standard FR-4 UL94V-0 printed circuit board. This PCB is preferred over cheaper
alternatives because of lower dielectric losses at high frequencies, less moisture absorption, greater strength
and stiffness, and the self-extinguishing flammability-characteristics.
11.2 Layout Example
High-speed traces
10 mils
Ground plane
40 mils
Keep this
space free
from planes,
traces, pads,
and vias
FR-4
0r ~ 4.5
Power plane
10 mils
Low-speed traces
Figure 11-1. Layout Example
26
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation, see the following:
• Digital Isolator Design Guide
• Isolation Glossary
• How to use isolation to improve ESD, EFT, and Surge immunity in industrial systems
• SN6501-Q1 Transformer Driver for Isolated Power Supplies
• SN65HVD231Q Automotive 3.3-V CAN Transceiver
• TPS76333-Q1Low-Power 150-mA Low-Dropout Linear Regulators
• TMS320F28035PAGQ Piccolo™ Microcontrollers
12.2 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
12.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
12.4 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
12.5 Trademarks
Piccolo™ is a trademark of Texas Instruments.
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
12.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
12.7 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
ISO7710FQDQ1
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
7710FQ
ISO7710FQDRQ1
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
7710FQ
ISO7710FQDWQ1
ACTIVE
SOIC
DW
16
40
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
ISO7710FQ
ISO7710FQDWRQ1
ACTIVE
SOIC
DW
16
2000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
ISO7710FQ
ISO7710QDQ1
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
7710Q
ISO7710QDRQ1
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
7710Q
ISO7710QDWQ1
ACTIVE
SOIC
DW
16
40
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
ISO7710Q
ISO7710QDWRQ1
ACTIVE
SOIC
DW
16
2000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
ISO7710Q
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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