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ISO7821, ISO7821F
SLLSEM2F – NOVEMBER 2014 – REVISED MARCH 2016
ISO7821x High-Performance, 8000 VPK Reinforced Dual Channel Digital Isolator
1 Features
3 Description
•
•
•
•
•
The ISO7821 is a high-performance, dual-channel
digital isolator with 8000 VPK isolation voltage. This
device has reinforced isolation certifications
according to VDE, CSA, CQC, and TUV. The isolator
provides high electromagnetic immunity and low
emissions at low power consumption, while isolating
CMOS or LVCMOS digital I/O’s. Each isolation
channel has a logic input and output buffer separated
by silicon dioxide (SiO2) insulation barrier. ISO7821
has one forward and one reverse-direction channel. If
the input power or signal is lost, default output is
'high' for the ISO7821 and 'low' for the ISO7821F
device. Used in conjunction with isolated power
supplies, this device prevents noise currents on a
data bus or other circuits from entering the local
ground and interfering with or damaging sensitive
circuitry. Through innovative chip design and layout
techniques, electromagnetic compatibility of ISO7821
has been significantly enhanced to ease system-level
ESD, EFT, Surge and Emissions compliance.
ISO7821 is available in 16-pin SOIC wide-body (DW)
and extra-wide body (DWW) packages. The DWW
package option comes with enable pins which can be
used to put the respective outputs in high impedance
for multi-master driving applications and to reduce
power consumption.
1
•
•
•
•
•
•
•
•
Signaling Rate: Up to 100 Mbps
Wide Supply Range: 2.25 V to 5.5 V
2.25 V to 5.5 V Level Translation
Wide Temperature Range: –55°C to 125°C
Low Power Consumption, Typical 1.8 mA per
Channel at 1 Mbps
Low Propagation Delay: 11 ns Typical
(5 V Supplies)
Industry leading CMTI(Min): ±100 kV/μs
Robust Electromagnetic Compatibility (EMC)
System-Level ESD, EFT, and Surge Immunity
Low Emissions
Isolation Barrier Life: > 25 Years
SOIC-16 Wide Body (DW) and Extra-Wide Body
(DWW) Package Options
Safety and Regulatory Approvals:
– 8000 VPK Reinforced Isolation per DIN V VDE
V 0884-10 (VDE V 0884-10):2006-12
– 5.7 kVRMS Isolation for 1 minute per UL 1577
– CSA Component Acceptance Notice 5A, IEC
60950-1 and IEC 60601-1 End Equipment
Standards
– CQC Certification per GB4943.1-2011
– TUV Certification per EN 61010-1 and EN
60950-1
– All DW Package Certifications Complete;
DWW Package Certifications Complete per
UL, TUV and Planned for VDE, CSA, and
CQC
Device Information(1)
PART NUMBER
ISO7821,
ISO7821F
Industrial Automation
Motor Control
Power Supplies
Solar Inverters
Medical Equipment
Hybrid Electric Vehicles
BODY SIZE (NOM)
10.30 mm x 7.50 mm
Extra wide SOIC,
10.30 mm × 14.0 mm
DWW (16)
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
spacer
2 Applications
•
•
•
•
•
•
PACKAGE
SOIC, DW (16)
Simplified Schematic
VCCI
Isolation
Capacitor
VCCO
INx
OUTx
ENx (DWW package only)
GNDI
GNDO
(1)
VCCI and GNDI are supply and ground
connections respectively for the input
channels.
(2)
VCCO and GNDO are supply and ground
connections respectively for the output
channels.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
ISO7821, ISO7821F
SLLSEM2F – NOVEMBER 2014 – REVISED MARCH 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
6.10
6.11
6.12
7
8
1
1
1
2
5
6
Absolute Maximum Ratings ..................................... 6
ESD Ratings.............................................................. 6
Recommended Operating Conditions....................... 6
Thermal Information .................................................. 7
Power Dissipation Characteristics ............................ 7
Electrical Characteristics, 5 V ................................... 8
Electrical Characteristics, 3.3 V ................................ 9
Electrical Characteristics, 2.5 V .............................. 10
Switching Characteristics, 5 V ................................ 11
Switching Characteristics, 3.3 V ........................... 11
Switching Characteristics, 2.5 V ........................... 12
Typical Characteristics .......................................... 13
Parameter Measurement Information ................ 14
Detailed Description ............................................ 16
8.1
8.2
8.3
8.4
9
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
16
16
17
21
Application and Implementation ........................ 23
9.1 Application Information............................................ 23
9.2 Typical Application .................................................. 23
10 Power Supply Recommendations ..................... 25
11 Layout................................................................... 26
11.1 PCB Material ......................................................... 26
11.2 Layout Guidelines ................................................. 26
11.3 Layout Example .................................................... 26
12 Device and Documentation Support ................. 27
12.1
12.2
12.3
12.4
12.5
12.6
Documentation Support ........................................
Related Links ........................................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
27
27
27
27
27
27
13 Mechanical, Packaging, and Orderable
Information ........................................................... 27
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision E (December 2015) to Revision F
Page
•
Changed the Safety and Regulatory Approvals list of Features ........................................................................................... 1
•
Added Features "TUV Certification per EN 61010-1 and EN 60950-1" ................................................................................ 1
•
Changed text in the first paragraph of the Description From: "certifications according to VDE, CSA, and CQC". To:
"certifications according to VDE, CSA, CQC, and TUV." ...................................................................................................... 1
•
Added Note 1 to Table 2 ..................................................................................................................................................... 18
•
Added TUV to the Regulatory Information section and Table 4. Deleted Note 1 in Table 4 .............................................. 19
•
Changed Figure 15 .............................................................................................................................................................. 22
Changes from Revision D (July 2015) to Revision E
Page
•
Changed Features From: 8000 VPK VIOTM and 2121 VPK VIORM Reinforced..To: 8000 VPK Reinforced.................................. 1
•
Added Features: DW Package Certifications Complete; DWW Certifications Planned ........................................................ 1
•
Added text to the Description: and extra-wide body (DWW) packages... .............................................................................. 1
•
Added package: Extra wide SOIC, DWW (16) to the Device Information table .................................................................... 1
•
Added the DWW pinout image .............................................................................................................................................. 5
•
Added the DWW package to the Thermal Information .......................................................................................................... 7
•
Changed the MIN value of CMTI in Electrical Characteristics, 5 V table From: 70 To: 100 kV/µs, deleted the TYP
value of 100 kV/µs ................................................................................................................................................................. 8
•
Added the DW package value to the Supply Current section of the Electrical Characteristics, 5 V ...................................... 8
•
Added the DWW package value to the Supply Current section of the Electrical Characteristics, 5 V .................................. 8
•
Changed the MIN value of CMTI in Electrical Characteristics, 3.3 V table From: 70 To: 100 kV/µs, deleted the TYP
value of 100 kV/µs ................................................................................................................................................................. 9
•
Added the DW package value to the Supply Current section of the Electrical Characteristics, 3.3 V ................................... 9
•
Added the DWW package value to the Supply Current section of the Electrical Characteristics, 3.3 V .............................. 9
2
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ISO7821, ISO7821F
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SLLSEM2F – NOVEMBER 2014 – REVISED MARCH 2016
•
Changed the MIN value of CMTI in Electrical Characteristics, 2.5 V table From: 70 To: 100 kV/µs, deleted the TYP
value of 100 kV/µs ............................................................................................................................................................... 10
•
Added the DW package value to the Supply Current section of the Electrical Characteristics, 2.5 V ................................. 10
•
Added the DWW package value to the Supply Current section of the Electrical Characteristics, 2.5 V ............................ 10
•
Added tPHZ, tPLZ, tPZH, and tPZL to Switching Characteristics, 3.3 V....................................................................................... 11
•
Added tPHZ, tPLZ, tPZH, and tPZL to Switching Characteristics, 2.5 V....................................................................................... 12
•
Added Figure 8 .................................................................................................................................................................... 14
•
Added the DWW package to Table 1 ................................................................................................................................... 17
•
Changed CIO typ value From: 2 To 1 pF in Table 1 ............................................................................................................ 17
•
Added the DWW package to Table 2 ................................................................................................................................... 18
•
Changed Parameter information and added the DWW package information in Table 3 .................................................... 18
•
Added the DWW package information to Table 4 ................................................................................................................ 19
•
added DWW-16 package options to Table 5 ...................................................................................................................... 20
•
Changed Table 6 ................................................................................................................................................................. 21
•
Added text to the Application Information section: "isolation voltage per UL 1577." ........................................................... 23
Changes from Revision C (May 2015) to Revision D
Page
•
Added device ISO7821F to the datasheet ............................................................................................................................ 1
•
Changed the Description to include: "default output is 'high' for the ISO7821 device and 'low' for the ISO7821F
device. ................................................................................................................................................................................... 1
•
Changed the Simplified Schematic ........................................................................................................................................ 1
•
Changed tPLH and tPHL From: 5.5 V to 5 V in Figure 6 ......................................................................................................... 13
•
Changed Figure 9 ................................................................................................................................................................ 15
•
Changed the Functional Block Diagram .............................................................................................................................. 16
•
Changed Table 1 title From: IEC Insulation and Safety-Related Specifications for DW-16 Package To: Package
Insulation and Safety-Related Specifications ...................................................................................................................... 17
•
Changed Figure 13 , Added Figure 14 ................................................................................................................................. 20
Changes from Revision B (April 2015) to Revision C
Page
•
Changed From: VCC1 and VCC2 To: VCCI and VCCO, GND1 and GND2 To: GNDI and GNDO and added Notes 1 and
2 in the Simplified Schematic ................................................................................................................................................ 1
•
Changed the MIN value of CMTI in Electrical Characteristics, 5 V table From: 50 To: 70 kV/µs ......................................... 8
•
Changed the MIN value of CMTI in Electrical Characteristics, 3.3 V table From: 50 To: 70 kV/µs ...................................... 9
•
Changed the MIN value of CMTI in Electrical Characteristics, 2.5 V table From: 50 To: 70 kV/µs .................................... 10
•
Added sentence "If the EN pin is available and low then the output goes to high impedance." to the Overview
section ................................................................................................................................................................................. 16
•
Changed the Functional Block Diagram to include the EN pin on the Receiver side .......................................................... 16
•
Changed the Installation classification of the Table 3 to include DW package information ................................................. 18
•
Changed "ISO782W functional modes" To: "ISO7821DW functional modes" in Device Functional Modes........................ 21
•
Changed Table 6 title From: "Functional Table" To: "ISO7821DW Function Table"............................................................ 21
•
Added the Device I/O Schematics section .......................................................................................................................... 22
•
Changed device number ISO7821 To: ISO7821DW in Figure 17 ....................................................................................... 24
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SLLSEM2F – NOVEMBER 2014 – REVISED MARCH 2016
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Changes from Revision A (December 2014) to Revision B
Page
•
Changed the document title From: "Channel Digital Isolator" To: "Channel 1/1 Digital Isolator" .......................................... 1
•
Added Features: 2.25 V to 5.5 V Level Translation ............................................................................................................... 1
•
Changed the Safety and Regulatory Approvals list of Features ........................................................................................... 1
•
Changed text in the Description From: "This device is being reviewed for reinforced isolation certification by VDE
and CSA. To: "This device has reinforced isolation certifications according to VDE, CSA, and CQC." ................................ 1
•
Added Note (3) to the Absolute Maximum Ratings (1) table .................................................................................................... 6
•
Changed From: VCCX To: VCCO In IOH and IOL of the Recommended Operating Conditions table ........................................ 6
•
Changed From: VCCX To: VCCI In VIH and VIL of the Recommended Operating Conditions table ......................................... 6
•
Changed Note (1) of the Recommended Operating Conditions table ................................................................................... 6
•
Added the Power Dissipation Characteristics table ............................................................................................................... 7
•
Changed From: VCCX To: VCCO In VOH of the Electrical Characteristics, 5 V table ................................................................ 8
•
Changed From: VCCX To: VCCO In VI(HYS) of the Electrical Characteristics, 5 V table ............................................................ 8
•
Changed From: VCCX To: VCCI In IIH of the Electrical Characteristics, 5 V table .................................................................... 8
•
Changed From: VCCX To: VCCI In CMTI of the Electrical Characteristics, 5 V table .............................................................. 8
•
Changed From: VCCX To: VCCI In Supply Current, DC Signal of the Electrical Characteristics, 5 V table.............................. 8
•
Changed Note (1) of the Electrical Characteristics, 5 V table ............................................................................................... 9
•
Changed From: VCCX To: VCCO In VOH of the Electrical Characteristics, 3.3 V table ............................................................. 9
•
Changed From: VCCX To: VCCO In VI(HYS) of the Electrical Characteristics, 3.3 V table ......................................................... 9
•
Changed From: VCCX To: VCCI In IIH of the Electrical Characteristics, 3.3 V table.................................................................. 9
•
Changed From: VCCX To: VCCI In CMTI of the Electrical Characteristics, 3.3 V table ........................................................... 9
•
Changed From: VCCX To: VCCI In Supply Current, DC Signal of the Electrical Characteristics, 3.3 V table .......................... 9
•
Changed Note (1) of the Electrical Characteristics, 3.3 V table .......................................................................................... 10
•
Changed From: VCCX To: VCCO In VOH of the Electrical Characteristics, 2.5 V table ........................................................... 10
•
Changed From: VCCX To: VCCI In IIH of the Electrical Characteristics, 2.5 V table ............................................................... 10
•
Changed From: VCCX To: VCCI In Supply Current, DC Signal of the Electrical Characteristics, 2.5 V table ........................ 10
•
Changed Note (1) of the Electrical Characteristics, 2.5 V table .......................................................................................... 11
•
Changed Figure 7 ................................................................................................................................................................ 14
•
Changed From: VCC1 To: VCCI in Figure 9 ........................................................................................................................... 15
•
Changed Figure 10 .............................................................................................................................................................. 15
•
Changed the Test Condition of CTI in Table 1 .................................................................................................................... 17
•
Changed the MIN value of CTI From" > 600 V To: 600 V.................................................................................................... 17
•
Changed Table 2 title From: DIN V VDE 0884-10 (VDE V 0884-10) and UL 1577 Insulation Characteristics To:
Added the DWW package to ................................................................................................................................................ 18
•
Changed Table 2 ................................................................................................................................................................. 18
•
Changed columns VDE and CSA to Table 4 ....................................................................................................................... 19
•
Changed title From: IEC Safety Limiting Values To: Safety Limiting Values ....................................................................... 20
•
Changed the table in Safety Limiting Values, added IS DW-16 package options ................................................................ 20
•
Changed Figure 13 .............................................................................................................................................................. 20
•
Deleted INPUT-SIDE and OUTPUT-SIDE from columns 1 and 2 of Table 6 ..................................................................... 21
•
Changed Note (1) of Table 6 ............................................................................................................................................... 21
•
Changed the Application Information section ....................................................................................................................... 23
•
Changed the Typical Application section and Figure 16 ...................................................................................................... 23
•
Added text and Figure 17 to the Detailed Design Procedure section ................................................................................. 24
4
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SLLSEM2F – NOVEMBER 2014 – REVISED MARCH 2016
Changes from Original (November 2014) to Revision A
Page
•
Changed From: A product preview that included only page 1 and the pinout section To: A complete data sheet .............. 1
•
Added Note: "This coupler..." to the High Voltage Feature Description section ................................................................. 17
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ISO7821, ISO7821F
SLLSEM2F – NOVEMBER 2014 – REVISED MARCH 2016
www.ti.com
5 Pin Configuration and Functions
DW Package
16-Pin (SOIC)
Top View
GND1 1
DWW Package
16-Pin (SOIC)
Top View
16 GND2
VCC1
NC
2
15
VCC1
3
14 VCC2
1
16 VCC2
NC
INB
5
NC
6
13
3
EN1
4
INA
12 OUTB
OUTA 5
11
GND1 7
NC
NC
10
8
15 GND2
ISOLATION
OUTA 4
ISOLATION
GND1 2
14
NC
13
EN2
12
INA
NC
INB
6
11 OUTB
NC
7
10
NC
NC
9 GND2
GND1 8
9 GND2
Pin Functions
PIN
NAME
NO.
NO.
DW
DWW
I/O
DESCRIPTION
GND1
1, 7
2,8
–
Ground connection for VCC1
GND2
9, 16
9,15
–
Ground connection for VCC2
INA
13
12
I
Input, channel A
INB
5
6
I
Input, channel B
NC
2, 6, 8, 10 ,11,
15
3,7,10,14
–
Not connected
OUTA
4
5
O
Output, channel A
OUTB
12
11
O
Output, channel B
VCC1
3
1
–
Power supply, VCC1
VCC2
14
16
–
Power supply, VCC2
EN1
–
4
I
Output enable 1. Output pins on side 1 are enabled when EN1 is high or open and
in high-impedance state when EN1 is low.
EN2
–
13
I
Output enable 2. Output pins on side 2 are enabled when EN2 is high or open and
in high-impedance state when EN2 is low.
6
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SLLSEM2F – NOVEMBER 2014 – REVISED MARCH 2016
6 Specifications
6.1 Absolute Maximum Ratings (1)
MIN
MAX
Supply voltage (2)
VCC1, VCC2
–0.5
6
Voltage
INx, OUTx
–0.5
VCC + 0.5 (3)
Output Current
IO
-15
15
mA
12.8
kV
150
°C
Surge Immunity
Storage temperature, Tstg
(1)
(2)
(3)
–65
UNIT
V
V
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values except differential I/O bus voltages are with respect to the local ground terminal (GND1 or GND2) and are peak
voltage values.
Maximum voltage must not exceed 6 V.
6.2 ESD Ratings
VESD
(1)
(2)
Electrostatic discharge
VALUE
UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all
pins (1)
±6000
V
Charged device model (CDM), per JEDEC specification
JESD22-C101, all pins (2)
±1500
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
MIN
VCC1, VCC2
Supply voltage
VCCO
IOH
IOL
TYP
2.25
High-level output current
Low-level output current
(1)
=5V
-4
VCCO = 3.3 V
-2
VCCO = 2.5 V
-1
MAX
UNIT
5.5
V
mA
VCCO = 5 V
4
VCCO = 3.3 V
2
VCCO = 2.5 V
1
mA
VIH
High-level input voltage
0.7 x VCCI (1)
VCCI
VIL
Low-level input voltage
0
0.3 x VCCI
DR
Signaling rate
0
100
Mbps
TJ
Junction temperature (2)
-55
150
°C
TA
Ambient temperature
-55
125
°C
(1)
(2)
25
V
V
VCCI = Input-side VCC; VCCO = Output-side VCC.
To maintain the recommended operating conditions for TJ, see the Thermal Information table.
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6.4 Thermal Information
ISO7821
THERMAL METRIC (1)
DW (SOIC)
DWW (SOIC)
16 PINS
16-PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
84.7
84.7
°C/W
RθJC(top)
Junction-to-case(top) thermal resistance
47.3
46.0
°C/W
RθJB
Junction-to-board thermal resistance
49.4
54.5
°C/W
ψJT
Junction-to-top characterization parameter
19.1
18.5
°C/W
ψJB
Junction-to-board characterization parameter
48.8
53.8
°C/W
RθJC(bottom)
Junction-to-case(bottom) thermal resistance
n/a
n/a
°C/W
(1)
For more information about trdational and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Power Dissipation Characteristics
VALUE
PD
Maximum power dissipation by ISO7821x
PD1
Maximum power dissipation by side-1 of
ISO7821x
PD2
Maximum power dissipation by side-2 of
ISO7821x
8
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UNIT
100
VCC1 = VCC2 = 5.5 V, TJ = 150°C,
CL = 15 pF, input a 50 MHz 50% duty cycle
square wave
50
mW
50
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SLLSEM2F – NOVEMBER 2014 – REVISED MARCH 2016
6.6 Electrical Characteristics, 5 V
VCC1 = VCC2 = 5 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
VCCO (1) – 0.4
VCCO – 0.2
VOH
High-level output voltage
IOH = –4 mA; see Figure 7
VOL
Low-level output voltage
IOL = 4 mA; see Figure 7
VI(HYS)
Input threshold voltage hysteresis
IIH
High-level input current
VIH = VCCI (1) at INx or ENx
IIL
Low-level input current
VIL = 0 V at INx or ENx
-10
CMTI
Common-mode transient immunity
VI = VCCI or 0 V; see Figure 10
100
0.2
MAX
UNIT
V
0.4
0.1 x VCCO (1)
V
V
10
μA
kV/μs
Supply Current - ISO7821DW and ISO7821FDW
ICC1, ICC2
DC Signal
VI = 0 V (ISO7821F) , VI =
VCCI (1)(ISO7821)
1.2
1.7
mA
ICC1, ICC2
DC Signal
VI = VCCI (1) (ISO7821F) , VI = 0 V
(ISO7821)
2.4
3.4
mA
ICC1, ICC2
1 Mbps
1.8
2.6
mA
ICC1, ICC2
10 Mbps
2.4
3.2
mA
ICC1, ICC2
100 Mbps
7.5
9.3
mA
0.7
1.1
mA
All channels switching with square wave
clock input;
CL = 15 pF
Supply Current - ISO7821DWW and ISO7821FDWW
ICC1, ICC2
EN1 = EN2 = 0V, VI = 0 V (ISO7821F) ,
VI = VCCI (1)(ISO7821)
Disable
(1)
ICC1, ICC2
Disable
EN1 = EN2 = 0V, VI = VCCI
(ISO7821F) , VI = 0 V (ISO7821)
1.8
2.9
mA
ICC1, ICC2
DC Signal
VI = 0 V (ISO7821F) , VI =
VCCI (1)(ISO7821)
1.2
1.7
mA
2.4
3.5
mA
1.9
2.7
mA
2.5
3.2
mA
7.7
9.3
mA
(1)
ICC1, ICC2
DC Signal
ICC1, ICC2
1 Mbps
ICC1, ICC2
10 Mbps
ICC1, ICC2
100 Mbps
(1)
VI = VCCI (ISO7821F) , VI = 0 V
(ISO7821)
All channels switching with square wave
clock input; CL = 15 pF
VCCI = Input-side VCC; VCCO = Output-side VCC.
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6.7 Electrical Characteristics, 3.3 V
VCC1 = VCC2 = 3.3 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
VCCO (1) – 0.4
VCCO – 0.2
VOH
High-level output voltage
IOH = –2 mA; see Figure 7
VOL
Low-level output voltage
IOL = 2 mA; see Figure 7
VI(HYS)
Input threshold voltage hysteresis
IIH
High-level input current
VIH = VCCI (1) at INx or ENx
IIL
Low-level input current
VIL = 0 V at INx or ENx
-10
CMTI
Common-mode transient immunity
VI = VCCI or 0 V; see Figure 10
100
0.2
MAX
UNIT
V
0.4
0.1 x VCCO
V
V
10
μA
kV/μs
Supply Current - ISO7821DW and ISO7821FDW
ICC1, ICC2
DC Signal
VI = 0 V (ISO7821F) , VI =
VCCI (1)(ISO7821)
1.2
1.7
mA
ICC1, ICC2
DC Signal
VI = VCCI (1) (ISO7821F) , VI = 0 V
(ISO7821)
2.4
3.4
mA
ICC1, ICC2
1 Mbps
1.8
2.6
mA
2.2
3
mA
5.8
7.1
mA
0.7
1.1
mA
ICC1, ICC2
10 Mbps
ICC1, ICC2
100 Mbps
All channels switching with square wave
clock input; CL = 15 pF
Supply Current - ISO7821DWW and ISO7821FDWW
ICC1, ICC2
Disable
EN1 = EN2 = 0V, VI = 0 V (ISO7821F) ,
VI = VCCI (1)(ISO7821)
(1)
ICC1, ICC2
Disable
EN1 = EN2 = 0V, VI = VCCI
(ISO7821F) , VI = 0 V (ISO7821)
1.8
2.9
mA
ICC1, ICC2
DC Signal
VI = 0 V (ISO7821F) , VI =
VCCI (1)(ISO7821)
1.2
1.7
mA
2.4
3.5
mA
1.9
2.6
mA
2.3
3
mA
5.9
7.1
mA
(1)
ICC1, ICC2
DC Signal
ICC1, ICC2
1 Mbps
ICC1, ICC2
10 Mbps
ICC1, ICC2
100 Mbps
(1)
10
VI = VCCI (ISO7821F) , VI = 0 V
(ISO7821)
All channels switching with square wave
clock input; CL = 15 pF
VCCI = Input-side VCC; VCCO = Output-side VCC.
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6.8 Electrical Characteristics, 2.5 V
VCC1 = VCC2 = 2.5 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
VCCO (1) – 0.4
VCCO – 0.2
VOH
High-level output voltage
IOH = –1 mA; see Figure 7
VOL
Low-level output voltage
IOL = 1 mA; see Figure 7
VI(HYS)
Input threshold voltage hysteresis
IIH
High-level input current
VIH = VCCI (1) at INx or ENx
IIL
Low-level input current
VIL = 0 V at INx or ENx
-10
CMTI
Common-mode transient immunity
VI = VCCI or 0 V; see Figure 10
100
0.2
MAX
UNIT
V
0.4
0.1 x VCCO
V
V
10
μA
kV/μs
Supply Current - ISO7821DW and ISO7821FDW
ICC1, ICC2
DC Signal
VI = 0 V (ISO7821F) , VI =
VCCI (1)(ISO7821)
1.2
1.7
mA
ICC1, ICC2
DC Signal
VI = VCCI (1) (ISO7821F) , VI = 0 V
(ISO7821)
2.4
3.4
mA
ICC1, ICC2
1 Mbps
1.8
2.6
mA
2.1
2.8
mA
4.9
5.9
mA
0.7
1.1
mA
ICC1, ICC2
10 Mbps
ICC1, ICC2
100 Mbps
All channels switching with square wave
clock input; CL = 15 pF
Supply Current - ISO7821DWW and ISO7821FDWW
ICC1, ICC2
EN1 = EN2 = 0V, VI = 0 V (ISO7821F) ,
VI = VCCI (1)(ISO7821)
Disable
(1)
ICC1, ICC2
Disable
EN1 = EN2 = 0V, VI = VCCI
(ISO7821F) , VI = 0 V (ISO7821)
1.8
2.9
mA
ICC1, ICC2
DC Signal
VI = 0 V (ISO7821F) , VI =
VCCI (1)(ISO7821)
1.2
1.7
mA
2.4
3.5
mA
1.9
2.6
mA
2.2
2.9
mA
5
6
mA
(1)
ICC1, ICC2
DC Signal
ICC1, ICC2
1 Mbps
ICC1, ICC2
10 Mbps
ICC1, ICC2
100 Mbps
(1)
VI = VCCI (ISO7821F) , VI = 0 V
(ISO7821)
All channels switching with square wave
clock input; CL = 15 pF
VCCI = Input-side VCC; VCCO = Output-side VCC.
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6.9 Switching Characteristics, 5 V
VCC1 = VCC2 = 5 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER
tPLH, tPHL
Propagation delay time
PWD (1)
Pulse width distortion |tPHL – tPLH|
tsk(pp)
(2)
See Figure 7
MIN
TYP
MAX
6
10.7
16
0.6
4.6
Part-to-part skew time
tr
Output signal rise time
tf
Output signal fall time
tPHZ
tPLZ
4.5
tfs
ns
2.4
3.9
Disable propagation delay, high-to-high impedance output for
ISO7821DWW and ISO7821FDWW
12
20
ns
Disable propagation delay, low-to-high impedance output for
ISO7821DWW and ISO7821FDWW
12
20
ns
10
20
ns
2
2.5
μs
Enable propagation delay, high impedance-to-low output for
ISO7821DWW
2
2.5
μs
Enable propagation delay, high impedance-to-low output for
ISO7821FDWW
10
20
ns
0.2
9
μs
See Figure 7
Default output delay time from input power loss
tie
ns
3.9
Enable propagation delay, high impedance-to-high output for
ISO7821FDWW
tPZL
UNIT
2.4
Enable propagation delay, high impedance-to-high output for
ISO7821DWW
tPZH
(1)
(2)
TEST CONDITIONS
See Figure 8
Measured from the time VCC
goes below 1.7 V. See Figure 9
16
Time interval error
ns
2
1
- 1 PRBS data at 100 Mbps
ns
Also known as Pulse Skew.
tsk(pp) is the magnitude of the difference in propagation delay times between any terminals of different devices switching in the same
direction while operating at identical supply voltages, temperature, input signals and loads.
6.10 Switching Characteristics, 3.3 V
VCC1 = VCC2 = 3.3 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER
tPLH, tPHL
Propagation delay time
PWD (1)
Pulse width distortion |tPHL – tPLH|
tsk(pp)
(2)
Output signal rise time
tf
Output signal fall time
tPHZ
tPLZ
tPZL
See Figure 7
MAX
10.8
16
0.7
4.7
UNIT
ns
4.5
3
1.3
3
Disable propagation delay, high-to-high impedance output for
ISO7821DWW and ISO7821FDWW
17
32
ns
Disable propagation delay, low-to-high impedance output for
ISO7821DWW and ISO7821FDWW
17
32
ns
17
32
ns
2
2.5
μs
Enable propagation delay, high impedance-to-low output for
ISO7821DWW
2
2.5
μs
Enable propagation delay, high impedance-to-low output for
ISO7821FDWW
17
32
ns
0.2
9
μs
See Figure 7
Enable propagation delay, high impedance-to-high output for
ISO7821DWW
Enable propagation delay, high impedance-to-high output for
ISO7821FDWW
ns
See Figure 8
Default output delay time from input power loss
Measured from the time VCC goes
below 1.7 V. See Figure 9
tie
Time interval error
216 - 1 PRBS data at 100 Mbps
12
TYP
6
1.3
tfs
(1)
(2)
MIN
Part-to-part skew time
tr
tPZH
TEST CONDITIONS
1
ns
Also known as Pulse Skew.
tsk(pp) is the magnitude of the difference in propagation delay times between any terminals of different devices switching in the same
direction while operating at identical supply voltages, temperature, input signals and loads.
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6.11 Switching Characteristics, 2.5 V
VCC1 = VCC2 = 2.5 V ± 10% (over recommended operating conditions unless otherwise noted)
PARAMETER
tPLH, tPHL
Propagation delay time
PWD (1)
Pulse width distortion |tPHL – tPLH|
tsk(pp)
(2)
Output signal rise time
tf
Output signal fall time
tPHZ
tPLZ
tPZL
tfs
tie
(1)
(2)
See Figure 7
MIN
TYP
MAX
7.5
11.7
17.5
0.7
4.7
Part-to-part skew time
tr
tPZH
TEST CONDITIONS
UNIT
ns
4.5
1.8
3.5
1.8
3.5
Disable propagation delay, high-to-high impedance output for
ISO7821DWW and ISO7821FDWW
22
45
ns
Disable propagation delay, low-to-high impedance output for
ISO7821DWW and ISO7821FDWW
22
45
ns
18
45
ns
2
2.5
μs
Enable propagation delay, high impedance-to-low output for
ISO7821DWW
2
2.5
μs
Enable propagation delay, high impedance-to-low output for
ISO7821FDWW
18
45
ns
0.2
9
μs
See Figure 7
Enable propagation delay, high impedance-to-high output for
ISO7821DWW
Enable propagation delay, high impedance-to-high output for
ISO7821FDWW
Default output delay time from input power loss
See Figure 8
Measured from the time VCC goes
below 1.7 V. See Figure 9
16
Time interval error
ns
2
- 1 PRBS data at 100 Mbps
1
ns
Also known as Pulse Skew.
tsk(pp) is the magnitude of the difference in propagation delay times between any terminals of different devices switching in the same
direction while operating at identical supply voltages, temperature, input signals and loads.
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6.12 Typical Characteristics
24
10
ICC1 at 2.5 V
ICC2 at 2.5 V
ICC1 at 3.3 V
ICC2 at 3.3 V
ICC1 at 5.0 V
ICC2 at 5.0 V
16
ICC1 at 2.5 V
ICC2 at 2.5 V
ICC1 at 3.3 V
ICC2 at 3.3 V
ICC1 at 5.0 V
ICC2 at 5.0 V
8
Supply Current (mA)
Supply Current (mA)
20
12
8
6
4
2
4
0
0
0
25
50
TA = 25°C
75
100
Data Rate (Mbps)
125
150
0
CL = 15 pF
125
150
D002
CL = No Load
1.0
VCC at 2.5V
VCC at 3.3V
VCC at 5.0V
0.9
5
Low-Level Output Voltage (V)
High-Level Output Voltage (V)
75
100
Data Rate (Mbps)
Figure 2. Supply Current vs Data Rate (with No Load)
6
4
3
2
VCC at 2.5V
VCC at 3.3V
VCC at 5.0V
1
0
-15
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-10
-5
High-Level Output Current (mA)
0
0
15
VCC1 Rising
VCC1 Falling
VCC2 Rising
VCC2 Falling
14
Propagation Delay Time (ns)
2.10
D001
Figure 4. Low-Level Output Voltage vs Low-Level Output
Current
2.25
2.15
15
TA = 25°C
Figure 3. High-Level Output Voltage vs High-level Output
Current
2.20
5
10
Low-Level Output Current (mA)
D001
TA = 25°C
Power Supply Under Voltage Threshold (V)
50
TA = 25°C
Figure 1. Supply Current vs Data Rate (with 15 pF Load)
2.05
2.00
1.95
1.90
1.85
1.80
13
12
11
10
9
7
6
1.70
-50
5
-60
0
50
100
Free-Air Temperature (oC )
150
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tPLH at 2.5 V
tPHL at 2.5 V
tPHL at 3.3 V
tPLH at 3.3 V
tPLH at 5 V
tPHL at 5 V
8
1.75
-30
D001
Figure 5. Power Supply Undervoltage Threshold vs Free-Air
Temperature
14
25
D001
0
30
60
Free-Air Temperature (oC )
90
120
D006
Figure 6. Propagation Delay Time vs Free-Air Temperature
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7 Parameter Measurement Information
Isolation Barrier
IN
Input
Generator
(See Note A)
VI
VCCI
50
VI
OUT
50%
50%
0V
tPLH
tPHL
CL
See Note B
VO
VOH
90%
50%
VO
50%
10%
VOL
tf
tr
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A.
The input pulse is supplied by a generator having the following characteristics: PRR ≤ 50 kHz, 50% duty cycle, tr ≤ 3
ns, tf ≤ 3ns, ZO = 50 Ω. At the input, 50 Ω resistor is required to terminate Input Generator signal. It is not needed in
actual application.
B.
CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 7. Switching Characteristics Test Circuit and Voltage Waveforms
VCCO
VCC
Isolation Barrier
IN
Input
Generator
(See Note A)
VI
Input
Generator
(See Note A)
VO
tPZL
0V
tPLZ
VOH
EN
0.5 V
VO
50%
VOL
50
OUT
VCC
VO
VCC / 2
VCC / 2
VI
0V
tPZH
EN
CL
See Note B
VI
VCC / 2
VCC / 2
VI
CL
See Note B
IN
3V
±1%
OUT
Isolation Barrier
0V
RL = 1 k
RL = 1 k
±1%
VOH
VO
50%
0.5 V
tPHZ
50
0V
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A.
The input pulse is supplied by a generator having the following characteristics: PRR ≤ 10 kHz, 50% duty cycle,
tr ≤ 3 ns, tf ≤ 3 ns, ZO = 50 Ω.
B.
CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 8. Enable/Disable Propagation Delay Time Test Circuit and Waveform
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Parameter Measurement Information (continued)
VI
VCC
VCC
Isolation Barrier
IN = 0 V (Devices without suffix F)
IN = VCC (Devices with suffix F)
IN
2.7 V
VI
OUT
0V
t fs
VO
fs high
VO
CL
VOH
50%
fs low V
OL
See Note A
Copyright © 2016, Texas Instruments Incorporated
A.
CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 9. Default Output Delay Time Test Circuit and Voltage Waveforms
VCCO
VCCI
S1
Isolation Barrier
C = 0.1 µF ±1%
IN
C = 0.1 µF ±1%
Pass-fail criteria:
The output must
remain stable.
OUT
+
EN
VOH or VOL
CL
See Note A
GNDI
+
VCM ±
±
GNDO
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A.
CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 10. Common-Mode Transient Immunity Test Circuit
16
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8 Detailed Description
8.1 Overview
ISO7821 employs an ON-OFF Keying (OOK) modulation scheme to transmit the digital data across a silicon
dioxide based isolation barrier. The transmitter sends a high frequency carrier across the barrier to represent one
digital state and sends no signal to represent the other digital state. The receiver demodulates the signal after
advanced signal conditioning and produces the output through a buffer stage. These devices also incorporates
advanced circuit techniques to maximize the CMTI performance and minimize the radiated emissions due the
high frequency carrier and IO buffer switching. The conceptual block diagram of a digital capacitive isolator,
Figure 11, shows a functional block diagram of a typical channel.
8.2 Functional Block Diagram
Transmitter
Receiver
EN
TX IN
OOK
Modulation
TX Signal
Conditioning
Oscillator
SiO2 based
Capacitive
Isolation
Barrier
RX Signal
Conditioning
RX OUT
Envelope
Detection
Emissions
Reduction
Techniques
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Figure 11. Conceptual Block Diagram of a Digital Capacitive Isolator
Also a conceptual detail of how the ON/OFF Keying scheme works is shown in Figure 12.
TX IN
Carrier signal through
isolation barrier
RX OUT
Figure 12. On-Off Keying (OOK) Based Modulation Scheme
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8.3 Feature Description
ISO7821 is available in two channel configurations and default output state options to enable a variety of
application uses.
PRODUCT
CHANNEL DIRECTION
MAX DATA RATE
DEFAULT OUTPUT
ISO7821
1 Forward, 1 Reverse
5700 VRMS / 8000 VPK
(1)
100 Mbps
High
ISO7821F
1 Forward, 1 Reverse
5700 VRMS / 8000 VPK
(1)
100 Mbps
Low
(1)
RATED ISOLATION
See the Regulatory Information section for detailed isolation ratings.
8.3.1 High Voltage Feature Description
NOTE
This coupler is suitable for 'safe electrical insulation' only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective
circuits.
Table 1. Package Insulation and Safety-Related Specifications
(over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
CLR
External clearance
Shortest terminal-to-terminal distance
through air
DW-16
CPG
External creepage
Shortest terminal-to-terminal distance
across the package surface
DW-16
CTI
Comparative tracking index
DIN EN 60112 (VDE 0303-11); IEC 60112; UL 746A
DWW-16
DWW-16
TYP MAX
8
UNIT
mm
14.5
8
mm
14.5
600
V
12
Ω
VIO = 500 V, TA = 25°C
10
VIO = 500 V, 100°C ≤ TA ≤ max
1011
RIO
Isolation resistance, input to output (1)
CIO
Barrier capacitance, input to output (1) VIO = 0.4 x sin (2πft), f = 1 MHz
1
pF
CI
Input capacitance (2)
2
pF
(1)
(2)
VI = VCC/2 + 0.4 x sin (2πft), f = 1 MHz, VCC = 5 V
Ω
All pins on each side of the barrier tied together creating a two-terminal device.
Measured from input pin to ground.
NOTE
Creepage and clearance requirements should be applied according to the specific
equipment isolation standards of an application. Care should be taken to maintain the
creepage and clearance distance of a board design to ensure that the mounting pads of
the isolator on the printed-circuit board do not reduce this distance.
Creepage and clearance on a printed-circuit board become equal in certain cases.
Techniques such as inserting grooves and/or ribs on a printed circuit board are used to
help increase these specifications.
18
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Table 2. Insulation Characteristics
PARAMETER
TEST CONDITIONS
SPECIFICATION
DW
DTI
Distance through the insulation
Minimum internal gap (internal clearance)
VIOWM Maximum working isolation voltage Time dependent dielectric breakdown (TDDB) test
UNIT
DWW
21
21
μm
1500
2000
VRMS
2121
2828
VDC
DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
VIOTM
Maximum transient isolation
voltage
VTEST = VIOTM
t = 60 sec (qualification)
t= 1 sec (100% production)
8000
8000
VPK
VIOSM
Maximum surge isolation voltage
Test method per IEC 60065, 1.2/50 µs waveform,
VTEST = 1.6 x VIOSM = 12800 VPK (1) (qualification)
8000
8000
VPK
VIORM
Maximum repetitive peak isolation
voltage
2121
2828
VPK
Method a, After Input/Output safety test subgroup 2/3,
VPR = VIORM x 1.2, t = 10 s,
Partial discharge < 5 pC
2545
3394
Method a, After environmental tests subgroup 1,
VPR = VIORM x 1.6, t = 10 s,
Partial Discharge < 5 pC
3394
4525
Method b1,After environmental tests subgroup 1,
VPR = VIORM x 1.875, t = 1 s (100% Production test)
Partial discharge < 5 pC
3977
5303
VIO = 500 V at TS
>109
>109
Pollution degree
2
2
Climatic category
55/125/21
55/125/21
5700
5700
VPR
Input-to-output test voltage
RS
Isolation resistance
VPK
Ω
UL 1577
VISO
(1)
Withstanding isolation voltage
VTEST = VISO = 5700 VRMS, t = 60 sec (qualification);
VTEST = 1.2 x VISO = 6840 VRMS , t = 1 sec (100%
production)
VRMS
Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier.
Table 3. IEC 60664-1 Ratings Table
PARAMETER
TEST CONDITIONS
Material group
Overvoltage category /
Installation classification
SPECIFICATION
I
Rated mains voltage ≤ 600 VRMS
DW package
DWW package
I–IV
Rated mains voltage ≤ 1000 VRMS
I–III
Rated mains voltage ≤ 1000 VRMS
I–IV
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8.3.1.1 Regulatory Information
DW package certifications are complete; DWW package certifications completed for UL and TUV and planned for
VDE, CSA, and CQC.
Table 4. Regulatory Information
VDE
Certified according to
DIN V VDE V 0884-10
(VDE V 0884-10):200612 and DIN EN 60950-1
(VDE 0805 Teil 1):201101
CSA
UL
Approved under CSA
Component Acceptance
Notice 5A, IEC 60950-1
and IEC 60601-1
Recognized under UL
1577 Component
Recognition Program
Reinforced insulation per
CSA 60950-1-07+A1+A2
and IEC 60950-1 2nd Ed.,
Reinforced insulation
800 VRMS (DW package)
Maximum transient
and 1450 VRMS (DWW
isolation voltage, 8000
package) max working
VPK;
voltage (pollution degree
Maximum repetitive peak 2, material group I);
isolation voltage, 2121
2 MOPP (Means of
VPK (DW), 2828 VPK
Patient Protection) per
(DWW);
Maximum surge isolation CSA 60601-1:14 and IEC
60601-1 Ed. 3.1,
voltage, 8000 VPK
250 VRMS (354 VPK) max
working voltage (DW
package)
Single protection, 5700
VRMS
Certificate number:
40040142
File number: E181974
20
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CQC
Certified according to
GB 4943.1-2011
Reinforced Insulation,
Altitude ≤ 5000 m,
Tropical Climate, 250
VRMS maximum
working voltage
Certificate number:
CQC15001121716
TUV
Certified according to
EN 61010-1:2010 (3rd Ed) and
EN 60950-1:2006/A11:2009/
A1:2010/A12:2011/A2:2013
5700 VRMS Reinforced insulation
per EN 61010-1:2010 (3rd Ed)
up to working voltage of 600
VRMS (DW package) and 1000
VRMS (DWW package)
5700 VRMS Reinforced insulation
per EN 60950-1:2006/A11:2009/
A1:2010/A12:2011/A2:2013 up
to working voltage of 800 VRMS
(DW package) and 1450 VRMS
(DWW package)
Client ID number: 77311
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8.3.1.2 Safety Limiting Values
Safety limiting intends to prevent potential damage to the isolation barrier upon failure of input or output circuitry. A failure of
the I/O can allow low resistance to ground or the supply and, without current limiting, dissipate sufficient power to overheat
the die and damage the isolation barrier potentially leading to secondary system failures.
Table 5. Safety Limiting
PARAMETER
TEST CONDITIONS
Safety input, output, or supply
current for DW-16 package
and DWW-16 Packages
IS
PS
Safety input, output, or total
power
TS
Maximum safety temperature
MIN
TYP
MAX
RθJA = 84.7°C/W, VI = 5.5 V, TJ = 150°C, TA = 25°C
268
RθJA = 84.7°C/W, VI = 3.6 V, TJ = 150°C, TA = 25°C
410
RθJA = 84.7°C/W, VI = 2.75 V, TJ = 150°C, TA = 25°C
537
RθJA = 84.7°C/W, TJ = 150°C, TA = 25°C
UNIT
mA
mW
1476
150
°C
The maximum safety temperature is the maximum junction temperature specified for the device. The power
dissipation and junction-to-air thermal impedance of the device installed in the application hardware determines
the junction temperature. The assumed junction-to-air thermal resistance in the Thermal Information is that of a
device installed on a High-K test board for Leaded Surface Mount Packages. The power is the recommended
maximum input voltage times the current. The junction temperature is then the ambient temperature plus the
power times the junction-to-air thermal resistance.
1600
Power
VCC1 = VCC2 = 2.75 V
VCC1 = VCC2 = 3.6 V
VCC1 = VCC2 = 5.5 V
500
1400
Safety Limiting Power (mW)
Safety Limiting Current (mA)
600
400
300
200
100
1200
1000
800
600
400
200
0
0
0
50
100
150
Ambient Temperature (qC)
200
0
D014
Figure 13. Thermal Derating Curve for Safety Limiting
Current per VDE
50
100
150
Ambient Temperature (qC)
200
D015
Figure 14. Thermal Derating Curve for Safety Limiting
Power per VDE
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8.4 Device Functional Modes
ISO7821 functional modes are shown in Table 6.
Table 6. ISO7821 Function Table (1)
VCCI
PU
X
(1)
(2)
(3)
22
VCCO
INPUT
(INx) (2)
OUTPUT ENABLE
(ENx)
(DWW Package Only)
OUTPUT
(OUTx)
H
H or open
H
L
H or open
L
Open
H or open
Default
X
L
Z
PU
PU
PD
PU
X
H or open
Default
X
PD
X
X
Undetermined
COMMENTS
Normal Operation:
A channel output assumes the logic state of its input.
Default mode: When INx is open, the corresponding channel output
goes to its default high logic state. Default= High for ISO7821 and Low
for ISO7821F.
A low value of Output Enable causes the outputs to be highimpedance.
Default mode: When VCCI is unpowered, a channel output assumes
the logic state based on the selected default option.Default= High for
ISO7821 and Low for ISO7821F.
When VCCI transitions from unpowered to powered-up, a channel
output assumes the logic state of its input.
When VCCI transitions from powered-up to unpowered, channel output
assumes the selected default state.
When VCCO is unpowered, a channel output is undetermined (3).
When VCCO transitions from unpowered to powered-up, a channel
output assumes the logic state of its input
VCCI = Input-side VCC; VCCO = Output-side VCC; PU = Powered up (VCC ≥ 2.25 V); PD = Powered down (VCC ≤ 1.7 V); X = Irrelevant; H
= High level; L = Low level; Z = High impedance
A strongly driven input signal can weakly power the floating VCC via an internal protection diode and cause undetermined output.
The outputs are in undetermined state when 1.7 V < VCCI, VCCO < 2.25 V.
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8.4.1 Device I/O Schematics
Input (Device Without Suffix F)
VCCI
VCCI
Input (Device With Suffix F)
VCCI
VCCI
VCCI
VCCI
VCCI
1.5 MW
985 W
985 W
INx
INx
1.5 MW
Output
Enable
VCCO
VCCO
VCCO VCCO
VCCO
2 MW
1970 W
~20 W
OUTx
Enx
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Figure 15. Device I/O Schematics
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The ISO7821 is a high-performance, dual-channel digital isolator with 5.7 kVRMS isolation voltage per UL 1577. It
utilizes single-ended CMOS-logic switching technology. Its supply voltage range is from 2.25 V to 5.5 V for both
supplies, VCC1 and VCC2. When designing with digital isolators, it is important to keep in mind that due to the
single-ended design structure, digital isolators do not conform to any specific interface standard and are only
intended for isolating single-ended CMOS or TTL digital signal lines. The isolator is typically placed between the
data controller (that is, μC or UART), and a data converter or a line transceiver, regardless of the interface type
or standard.
9.2 Typical Application
ISO7821 can be used with Texas Instruments' mixed signal micro-controller, digital-to-analog converter,
transformer driver, and voltage regulator to create an isolated 4-20 mA current loop.
VS
0.1 F
3.3 V
2
VCC D2 3
1:1.33
MBR0520L
1
SN6501
10 F
GND D1
0.1 F
IN
OUT
5
3.3VISO
10 F
TPS76333
3
1
EN
GND
2
10 F
MBR0520L
4, 5
Isolation Barrier
0.1 F
0.1 F
20
LOOP+
0.1 F
0.1 F
15
0.1 F
10
3
5
6
VCC1
DVCC
XOUT
MSP430G2132
XIN
14
8
2
4
P3.0 11
12
P3.1
5
VCC2
OUTB
INB
GND1
DVSS
INA
OUTA ISO7821
GND2
1, 7
4
9, 16
13
5
12
4
3
VA
VD
LOW
BASE
ERRLVL
16
0.1 F
DAC161P997
22
DBACK
DIN
C1
14
3 × 2.2 nF
1 F
C2
13
C3 COMA
12
9
OUT
COMD
1
LOOP±
2
Figure 16. Isolated 4-20 mA Current Loop
9.2.1 Design Requirements
For the ISO7821, use the parameters shown in Table 7.
Table 7. Design Parameters
24
PARAMETER
VALUE
Supply voltage
2.25 V to 5.5 V
Decoupling capacitor between VCC1 and GND1
0.1 µF
Decoupling capacitor from VCC2 and GND2
0.1 µF
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9.2.2 Detailed Design Procedure
Unlike optocouplers, which need external components to improve performance, provide bias, or limit current,
ISO7821 only needs two external bypass capacitors to operate.
ISO7821DW
VCC1
VCC2
GND1
GND1 1
16 GND2
GND2
0.1 µF
0.1 µF
NC
2
15
NC
GND2
GND1
3
OUTA 4
INB
14 VCC2
ISOLATION
VCC1
OUTA
13
INA
INA
INB
5
12 OUTB
NC
6
11
NC
GND1 7
10
NC
OUTB
GND1
NC
8
9 GND2
GND2
Figure 17. Typical ISO7821 Circuit Hook-up
9.2.2.1 Electromagnetic Compatibility (EMC) Considerations
Many applications in harsh industrial environment are sensitive to disturbances such as electrostatic discharge
(ESD), electrical fast transient (EFT), surge and electromagnetic emissions. These electromagnetic disturbances
are regulated by international standards such as IEC 61000-4-x and CISPR 22. Although system-level
performance and reliability depends, to a large extent, on the application board design and layout, the ISO7821
incorporate many chip-level design improvements for overall system robustness. Some of these improvements
include:
• Robust ESD protection for input and output signal pins and inter-chip bond pads.
• Low-resistance connectivity of ESD cells to supply and ground pins.
• Enhanced performance of high voltage isolation capacitor for better tolerance of ESD, EFT and surge events.
• Bigger on-chip decoupling capacitors to bypass undesirable high energy signals through a low impedance
path.
• PMOS and NMOS devices isolated from each other by using guard rings to avoid triggering of parasitic
SCRs.
• Reduced common mode currents across the isolation barrier by ensuring purely differential internal operation.
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9.2.3 Application Performance Curve
Typical eye diagram of ISO7821 indicate low jitter and wide open eye at the maximum data rate of 100 Mbps.
Figure 18. Eye Diagram at 100 Mbps PRBS, 5 V and 25°C
10 Power Supply Recommendations
To ensure reliable operation at all data rates and supply voltages, a 0.1 µF bypass capacitor is recommended at
input and output supply pins (VCC1 and VCC2). The capacitors should be placed as close to the supply pins as
possible. If only a single primary-side power supply is available in an application, isolated power can be
generated for the secondary-side with the help of a transformer driver such as Texas Instruments' SN6501. For
such applications, detailed power supply design and transformer selection recommendations are available in
SN6501 datasheet (SLLSEA0) .
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11 Layout
11.1 PCB Material
For digital circuit boards operating below 150 Mbps, (or rise and fall times higher than 1 ns), and trace lengths of
up to 10 inches, use standard FR-4 epoxy-glass as PCB material. FR-4 (Flame Retardant 4) meets the
requirements of Underwriters Laboratories UL94-V0, and is preferred over cheaper alternatives due to its lower
dielectric losses at high frequencies, less moisture absorption, greater strength and stiffness, and its selfextinguishing flammability-characteristics.
11.2 Layout Guidelines
A minimum of four layers is required to accomplish a low EMI PCB design (see Figure 19). Layer stacking should
be in the following order (top-to-bottom): high-speed signal layer, ground plane, power plane and low-frequency
signal layer.
• Routing the high-speed traces on the top layer avoids the use of vias (and the introduction of their
inductances) and allows for clean interconnects between the isolator and the transmitter and receiver circuits
of the data link.
• Placing a solid ground plane next to the high-speed signal layer establishes controlled impedance for
transmission line interconnects and provides an excellent low-inductance path for the return current flow.
• Placing the power plane next to the ground plane creates additional high-frequency bypass capacitance of
approximately 100 pF/in2.
• Routing the slower speed control signals on the bottom layer allows for greater flexibility as these signal links
usually have margin to tolerate discontinuities such as vias.
If an additional supply voltage plane or signal layer is needed, add a second power / ground plane system to the
stack to keep it symmetrical. This makes the stack mechanically stable and prevents it from warping. Also the
power and ground plane of each power system can be placed closer together, thus increasing the high-frequency
bypass capacitance significantly.
For detailed layout recommendations, see Application Note SLLA284, Digital Isolator Design Guide.
11.3 Layout Example
High-speed traces
10 mils
Ground plane
40 mils
Keep this
space free
from planes,
traces, pads,
and vias
FR-4
0r ~ 4.5
Power plane
10 mils
Low-speed traces
Figure 19. Layout Example
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
See the Isolation Glossary (SLLA353)
12.2 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 8. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
ISO7821
Click here
Click here
Click here
Click here
Click here
ISO7821F
Click here
Click here
Click here
Click here
Click here
12.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.4 Trademarks
E2E is a trademark of Texas Instruments.
12.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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SLLSEM2F – NOVEMBER 2014 – REVISED MARCH 2016
PACKAGE OUTLINE
DW0016B
SOIC - 2.65 mm max height
SCALE 1.500
SOIC
C
10.63
TYP
9.97
SEATING PLANE
PIN 1 ID
AREA
A
0.1 C
14X 1.27
16
1
2X
8.89
10.5
10.1
NOTE 3
8
9
0.51
0.31
0.25
C A
16X
B
7.6
7.4
NOTE 4
2.65 MAX
B
0.33
TYP
0.10
SEE DETAIL A
0.25
GAGE PLANE
0.3
0.1
0 -8
1.27
0.40
DETAIL A
(1.4)
TYPICAL
4221009/B 07/2016
NOTES:
1. All linear dimensions are in millimeters. Dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm, per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm, per side.
5. Reference JEDEC registration MS-013.
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EXAMPLE BOARD LAYOUT
DW0016B
SOIC - 2.65 mm max height
SOIC
SYMM
SYMM
16X (2)
16X (1.65)
SEE
DETAILS
1
SEE
DETAILS
1
16
16
16X (0.6)
16X (0.6)
SYMM
SYMM
14X (1.27)
14X (1.27)
9
8
9
8
R0.05 TYP
R0.05 TYP
(9.75)
(9.3)
HV / ISOLATION OPTION
8.1 mm CLEARANCE/CREEPAGE
IPC-7351 NOMINAL
7.3 mm CLEARANCE/CREEPAGE
LAND PATTERN EXAMPLE
SCALE:4X
METAL
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL
0.07 MAX
ALL AROUND
0.07 MIN
ALL AROUND
SOLDER MASK
DEFINED
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4221009/B 07/2016
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
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EXAMPLE STENCIL DESIGN
DW0016B
SOIC - 2.65 mm max height
SOIC
SYMM
SYMM
16X (1.65)
16X (2)
1
1
16
16
16X (0.6)
16X (0.6)
SYMM
SYMM
14X (1.27)
14X (1.27)
9
8
9
8
R0.05 TYP
R0.05 TYP
(9.3)
(9.75)
IPC-7351 NOMINAL
7.3 mm CLEARANCE/CREEPAGE
HV / ISOLATION OPTION
8.1 mm CLEARANCE/CREEPAGE
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
SCALE:4X
4221009/B 07/2016
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
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PACKAGE OUTLINE
DWW0016A
SOIC - 2.65 mm max height
SCALE 1.000
PLASTIC SMALL OUTLINE
C
17.4
17.1
A
SEATING PLANE
0.1 C
PIN 1 ID AREA
14X 1.27
16
1
10.4
10.2
NOTE 3
2X
8.89
8
9
16X
14.1
13.9
NOTE 4
B
0.25
0.51
0.31
A B
(2.286)
C
2.65 MAX
0.28
TYP
0.22
SEE DETAIL A
(1.625)
0.25
GAGE PLANE
0.3
0.1
1.1
0.6
0 -8
DETAIL A
TYPICAL
4221501/A 11/2014
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0,15 mm per side.
4. This dimension does not include interlead flash.
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SLLSEM2F – NOVEMBER 2014 – REVISED MARCH 2016
EXAMPLE BOARD LAYOUT
DWW0016A
SOIC - 2.65 mm max height
PLASTIC SMALL OUTLINE
16X (2)
16X (1.875)
(14.25)
(14.5)
16X (0.6)
16X (0.6)
1
1
16
16
SYMM
SYMM
14X
(1.27)
9
8
SYMM
14X
(1.27)
9
8
SYMM
(16.375)
(16.25)
LAND PATTERN EXAMPLE
LAND PATTERN EXAMPLE
STANDARD
SCALE:3X
PCB CLEARANCE & CREEPAGE OPTIMIZED
SCALE:3X
0.07 MAX
ALL AROUND
0.07 MIN
ALL AROUND
METAL
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
NON SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4221501/A 11/2014
NOTES: (continued)
5. Publication IPC-7351 may have alternate designs.
6. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
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EXAMPLE STENCIL DESIGN
DWW0016A
SOIC - 2.65 mm max height
PLASTIC SMALL OUTLINE
16X (2)
SYMM
1
16
16X (0.6)
SYMM
14X (1.27)
9
8
(16.25)
SOLDER PASTE EXAMPLE
STANDARD
BASED ON 0.125 mm THICK STENCIL
SCALE:4X
16X (1.875)
SYMM
1
16
16X (0.6)
SYMM
14X (1.27)
9
8
(16.375)
SOLDER PASTE EXAMPLE
PCB CLEARANCE & CREEPAGE OPTIMIZED
BASED ON 0.125 mm THICK STENCIL
SCALE:4X
4221501/A 11/2014
NOTES: (continued)
7. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
8. Board assembly site may have different recommendations for stencil design.
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
ISO7821DW
ACTIVE
SOIC
DW
16
40
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-55 to 125
ISO7821
ISO7821DWR
ACTIVE
SOIC
DW
16
2000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-55 to 125
ISO7821
ISO7821DWW
ACTIVE
SOIC
DWW
16
45
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-55 to 125
ISO7821
ISO7821DWWR
ACTIVE
SOIC
DWW
16
1000
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-55 to 125
ISO7821
ISO7821FDW
ACTIVE
SOIC
DW
16
40
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-55 to 125
ISO7821F
ISO7821FDWR
ACTIVE
SOIC
DW
16
2000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-55 to 125
ISO7821F
ISO7821FDWW
ACTIVE
SOIC
DWW
16
45
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-55 to 125
ISO7821F
ISO7821FDWWR
ACTIVE
SOIC
DWW
16
1000
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-55 to 125
ISO7821F
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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