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Table of Contents
User’s Guide
ISOUSB211DPEVM Isolated USB Evaluation Module
ABSTRACT
This user’s guide describes the ISOUSB211 single-channel digital isolated USB evaluation module (EVM). This
EVM lets designers evaluate device performance for fast development and analysis of isolated systems. The
EVM supports evaluation of ISOUSB211 in a 28-pin SSOP (DP-29) package.
CAUTION
This evaluation module is made available for isolator parameter performance evaluation only and is
not intended for isolation voltage testing. To prevent damage to the EVM, any voltage applied as
a supply or digital input/output must be maintained within the 0-V to 5.5-V recommended operating
range.
Table of Contents
1 Introduction.............................................................................................................................................................................2
2 Overview..................................................................................................................................................................................2
3 Pin Configuration of the ISOUSB211 High-, Full-, and Low-Speed Isolated USB Repeater............................................ 3
4 EVM Setup and Operation......................................................................................................................................................4
5 EVM Schematics..................................................................................................................................................................... 6
6 PCB Layout and 3D Diagram................................................................................................................................................. 7
7 Bill of Materials......................................................................................................................................................................11
List of Figures
Figure 3-1. ISOUSB211 High-, Full-, and Low-Speed Speed Isolated USB Repeater Pin Configuration....................................3
Figure 4-1. ISOUSB211 Test Setup............................................................................................................................................. 4
Figure 5-1. ISOUSB211DPEVM Schematic.................................................................................................................................6
Figure 6-1. ISOUSB211DPEVM PCB Layout - Top Layer........................................................................................................... 7
Figure 6-2. ISOUSB211DPEVM PCB Layout - Middle Layer...................................................................................................... 8
Figure 6-3. ISOUSB211DPEVM PCB Layout - Bottom Layer......................................................................................................9
Figure 6-4. ISOUSB211DPEVM PCB 3D View..........................................................................................................................10
List of Tables
Table 4-1. Resistor Configurations...............................................................................................................................................4
Table 7-1. Bill of Materials.......................................................................................................................................................... 11
Trademarks
All trademarks are the property of their respective owners.
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1
Introduction
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1 Introduction
This user’s guide describes EVM operation with respect to the ISOUSB211 single-channel isolated high-, full-,
and low-speed USB 2.0 repeater. This guide also describes the EVM BOM, EVM schematic, EVM PCB layout,
and typical laboratory setup.
2 Overview
The ISOUSB211 device is a galvanically-isolated USB 2.0 compliant repeater supporting low-speed (1.5 Mbps),
full-speed (12 Mbps), and high-speed (480 Mbps) signaling rates. The device supports automatic connect and
speed detection, reflection of pullups and pulldowns, and link power management allowing drop-in USB hub,
host, peripheral and cable isolation. The device also supports automatic role reversal - if after disconnect, a
new connection is detected on the upstream facing port, then the upstream and downstream port definitions are
reversed. The ISOUSB211 has built-in programmable equalization to cancel signal loss caused by board traces,
which helps in meeting USB 2.0 high-speed TX and RX eye-diagram templates. This device uses a silicon
dioxide (SiO2) insulation barrier with a withstand voltage of 5700 VRMS and a working voltage of 1060 VRMS.
Used in conjunction with isolated power supplies, the device protects against high voltage, and prevents noise
currents from the bus from entering the local ground. The ISOUSB211 device is available for both basic and
reinforced isolation. The ISOUSB211 device supports a wide ambient temperature range of –40°C to +115°C.
The device is available in the small footprint 28-pin SSOP (DP-28) package.
The EVM enables users to evaluate the ISOUSB211 device thoroughly before incorporating the device into their
designs. To facilitate the EVM to be powered from various power sources including regulated power supplies,
standard USB2.0 connector, and standard DC adapter, the EVM includes a transformer driver (SN6501), a
transformer (CMP-0030614-1), and five adjustable output LDOs (TPS76701 and TPS73701). This EVM can be
configured to use the provided LDOs to power the 3.3-V and 1.8-V power supplies, or bypass these external
LDOs and use the internal LDOs to power the 3.3-V and 1.8-V power supplies. The EVM can be configured to
operate with and without external LDOs and test configurations details of which are provided in the following
sections.
The EVM can be used to verify many of the ISOUSB211 data sheet parameters like data-rate, current
consumption, and others. Some of the data sheet specifications require a different test setup configuration
than the ISOUSB211DPEVM and hence, they cannot be verified from the EVM as is. The example parameters
include maximum data rate, propagation delay, and other timing specifications.
2
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Pin Configuration of the ISOUSB211 High-, Full-, and Low-Speed Isolated USB Repeater
3 Pin Configuration of the ISOUSB211 High-, Full-, and Low-Speed Isolated USB
Repeater
Figure 3-1 shows the ISOUSB211 high-, full-, and low-speed isolated USB repeater pin configuration.
1
28
V
2
27
V
3
26
GND2
4
25
V
5
24
V
V2OK
6
23
V1OK
UD-
7
22
DD-
UD+
8
21
DD+
EQ10
9
20
EQ20
EQ11
10
19
EQ21
11
18
V
GND1
12
17
GND2
CDPENZ1
13
16
CDPENZ2
NC
14
15
NC
V
BUS1
3P3V1
GND1
V
1P8V1
V
V
CC1
1P8V1
ISOLATION
V
BUS2
3P3V2
1P8V2
CC2
1P8V2
Not to scale
Figure 3-1. ISOUSB211 High-, Full-, and Low-Speed Speed Isolated USB Repeater Pin Configuration
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EVM Setup and Operation
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4 EVM Setup and Operation
This section describes the typical setup and operation of the EVM for device evaluation. Figure 4-1 shows a
typical test configuration for operating the ISOUSB211DPEVM using an USB 2.0 type-B receptacle.
USB Host
USB Device
Figure 4-1. ISOUSB211 Test Setup
Use a jumper to connect pin 2 to pin 1 of J15 to enable the U3 LDO. The U3 LDO provides a 5-V supply to
the USB device, and it also powers the U6 and U7 LDOs to generate 3.3 V and 1.8 V for the ISOUSB211. If an
external 5-V source is used to power the USB device through TP5, connect pin 2 to pin 3 of J15 to disable the
U3 LDO and set its output to high impedance.
ISOUSB211DPEVM has many DNP resistors which can be populated or unpopulated to setup the EVM to the
desired operating test conditions. Table 4-1 lists and describes all the possible test configurations that can be
achieved by populating various resistors.
Table 4-1. Resistor Configurations
4
Resistor
Description
R11
DNP by default. To disable the U4 LDO, populate a 0-Ω resistor on R11 and unpopulate R12.
R12
Connects U4 EN to ground to enable the LDO. When R12 is populated, unpopulate R11.
R13
Connects VBUS1 to the type-B receptacle VBUS. VBUS1 is powered at 5 V when R13 is populated. Unpopulate R14
and R15 to disconnect the U4 LDO from the VBUS1 and V3P3V1 pins. The internal LDO of ISOUSB211 generates 3.3
V for the V3P3V1 pin.
R14, R15
DNP by default. Populating R14 and R15 connects the U4 LDO to the VBUS1 and V3P3V1 pins. When these two
resistors are populated, unpopulate R13. When R14 and R15 are populated, VBUS1 and V3P3V1 are set to 3.3 V.
R16
DNP by default. To disable the U5 LDO, populate a 0-Ω resistor on R16 and unpopulate R17.
R17
Connects U5 EN to ground to enable the LDO. When R17 is populated, unpopulate R16.
R18
Connects VCC1 to the VBUS of the type-B receptacle. VCC1 is powered at 5 V when R18 is populated. Unpopulate
the R19 and R20 resistors to disconnect the U5 LDO from the VCC1 and V1P8V1 pins. The internal LDO of the
ISOUSB211 generates 1.8 V for the V1P8V1 pin.
R19, R20
Populating R19 and R20 connects the U5 LDO to the VCC1 and V1P8V1 pins. When these two resistors are populated,
unpopulate R18. When R19 and R20 are populated, VCC1 and V1P8V1 are set to 1.8 V.
R21
DNP by default. To disable the U6 LDO, populate a 0-Ω resistor on R21 and unpopulate R22.
R22
Connects U6 EN to ground to enable the LDO. When R22 is populated, unpopulate R21.
R23
DNP by default. The R23 resistor connects VBUS2 to the output of U3 LDO. VBUS2 is powered at 5 V when R23 is
populated. Unpopulate the R24 and R25 resistors to disconnect the U3 LDO from the VBUS2 and V3P3V2 pins. The
internal LDO of ISOUSB211 generates 3.3 V for the V3P3V2 pin.
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EVM Setup and Operation
Table 4-1. Resistor Configurations (continued)
Resistor
Description
R24, R25
Populating R24 and R25 connects the U6 LDO to the VBUS2 and V3P3V2 pins. When these two resistors are
populated, unpopulate R23 . When R24 and R25 are populated, VBUS2 and V3P3V2 are set to 3.3 V by the U6 LDO.
R26
DNP by default. To disable the U7 LDO, populate a 0-Ω resistor on R26 and unpopulate R27.
R27
Connects U7 EN to ground to enable the LDO. When R27 is populated, unpopulate R26.
R29
DNP by default. The R29 resistor connects VBUS2 to the output of U7 LDO. VCC2 is powered at 5 V when R29 is
populated. Unpopulate R28 and R30 to disconnect the U7 LDO from the VCC2 and V1P8V2 pins. The internal LDO of
ISOUSB211 generates 1.8 V for the V1P8V2 pin.
R28, R30
Populating R28 and R30 connects the U7 LDO to the VCC2 and V1P8V2 pins. When these two resistors are populated,
unpopulate R29. When R28 and R30 are populated, VCC2 and V1P8V2 are set to 1.8 V.
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EVM Schematics
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5 EVM Schematics
The ISOUSB211DPEVM is designed to accommodate any of the ISOUSB211 isolated high-, full-, or low-speed USB repeaters in a 28-pin SSOP (DP-28)
package. Figure 5-1 shows the ISOUSB211DPEVM schematic.
Figure 5-1. ISOUSB211DPEVM Schematic
6
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PCB Layout and 3D Diagram
6 PCB Layout and 3D Diagram
Figure 6-1 through Figure 6-3 show the printed-circuit board (PCB) layout top, middle and bottom layers,
respectively. Figure 6-4 shows a 3D diagram of the PCB indicating the look of a finished board.
Figure 6-1. ISOUSB211DPEVM PCB Layout - Top Layer
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PCB Layout and 3D Diagram
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Figure 6-2. ISOUSB211DPEVM PCB Layout - Middle Layer
8
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PCB Layout and 3D Diagram
Figure 6-3. ISOUSB211DPEVM PCB Layout - Bottom Layer
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PCB Layout and 3D Diagram
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Figure 6-4. ISOUSB211DPEVM PCB 3D View
10
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Bill of Materials
7 Bill of Materials
Table 7-1 lists the bill of materials (BOM) for this EVM.
Table 7-1. Bill of Materials
Item
Designator
Description
ManµFacturer
PartNumber
1
C1
CAP, CERM, 0.1 µF, 25 V, ±5%, X7R, 0603
AVX
06033C104JAT2A
2
C2
CAP, CERM, 1 µF, 50 V, ±10%, X5R, 0603
TDK
C1608X5R1H105K080AB
3
C3
CAP, CERM, 10 µF, 35 V, ±10%, X7R, AEC-Q200 TDK
Grade 1, 1206_190
CGA5L1X7R1V106K160AC
4
C4
CAP, CERM, 0.1 µF, 25 V, ±5%, X7R, 0603
AVX
06033C104JAT2A
5
C5
CAP, CERM, 1 µF, 50 V, ±10%, X5R, 0603
TDK
C1608X5R1H105K080AB
6
C6
CAP, CERM, 3.3 µF, 6.3 V, ±10%, X5R, 0603
Kemet
C0603C335K9PACTU
7
C7
CAP, CERM, 0.1 µF, 25 V, ±5%, X7R, 0603
AVX
06033C104JAT2A
8
C8
CAP, CERM, 1 µF, 50 V, ±10%, X5R, 0603
TDK
C1608X5R1H105K080AB
9
C9
CAP, CERM, 3.3 µF, 6.3 V, ±10%, X5R, 0603
Kemet
C0603C335K9PACTU
10
C10
CAP, CERM, 10 µF, 35 V, ±10%, X7R, AEC-Q200 TDK
Grade 1, 1206_190
CGA5L1X7R1V106K160AC
11
C11
CAP, CERM, 10 µF, 35 V, ±10%, X7R, AEC-Q200 TDK
Grade 1, 1206_190
CGA5L1X7R1V106K160AC
12
C12
CAP, CERM, 10 µF, 35 V, ±10%, X7R, AEC-Q200 TDK
Grade 1, 1206_190
CGA5L1X7R1V106K160AC
13
C13
CAP, CERM, 10 µF, 35 V, ±10%, X7R, AEC-Q200 TDK
Grade 1, 1206_190
CGA5L1X7R1V106K160AC
14
C14
CAP, CERM, 1 µF, 6.3 V, ±20%, X5R, 0201
MuRata
GRM033R60J105MEA2D
15
C15
CAP, CERM, 0.1 µF, 10 V, ±10%, X5R, 0201
Samsung ElectroMechanics
CL03A104KP3NNNC
16
C16
CAP, CERM, 2.2 µF, 6.3 V, ±20%, X5R, 0201
Samsung ElectroMechanics
CL03A225MQ3CRNC
17
C17
CAP, CERM, 0.1 µF, 10 V, ±10%, X5R, 0201
Samsung ElectroMechanics
CL03A104KP3NNNC
18
C18
CAP, CERM, 0.01 µF, 16 V, ±10%, X5R, 0201
MuRata
GRM033R61C103KA12D
19
C19
CAP, CERM, 2.2 µF, 6.3 V, ±20%, X5R, 0201
Samsung ElectroMechanics
CL03A225MQ3CRNC
20
C20
CAP, CERM, 0.1 µF, 10 V, ±10%, X5R, 0201
Samsung ElectroMechanics
CL03A104KP3NNNC
21
C21
CAP, CERM, 0.01 µF, 16 V, ±10%, X5R, 0201
MuRata
GRM033R61C103KA12D
22
C22
CAP, CERM, 1 µF, 6.3 V, ±20%, X5R, 0201
MuRata
GRM033R60J105MEA2D
23
C23
CAP, CERM, 1 µF, 6.3 V, ±20%, X5R, 0201
MuRata
GRM033R60J105MEA2D
24
C24
CAP, CERM, 0.1 µF, 10 V, ±10%, X5R, 0201
Samsung ElectroMechanics
CL03A104KP3NNNC
25
C25
CAP, CERM, 0.01 µF, 16 V, ±10%, X5R, 0201
MuRata
GRM033R61C103KA12D
26
C26
CAP, CERM, 2.2 µF, 6.3 V, ±20%, X5R, 0201
Samsung ElectroMechanics
CL03A225MQ3CRNC
27
C27
CAP, CERM, 0.1 µF, 10 V, ±10%, X5R, 0201
Samsung ElectroMechanics
CL03A104KP3NNNC
28
C28
CAP, CERM, 0.01 µF, 16 V, ±10%, X5R, 0201
MuRata
GRM033R61C103KA12D
29
C29
CAP, CERM, 0.1 µF, 10 V, ±10%, X5R, 0201
Samsung ElectroMechanics
CL03A104KP3NNNC
30
C30
CAP, CERM, 2.2 µF, 6.3 V, ±20%, X5R, 0201
Samsung ElectroMechanics
CL03A225MQ3CRNC
31
C31
CAP, CERM, 1 µF, 6.3 V, ±20%, X5R, 0201
MuRata
GRM033R60J105MEA2D
32
C32
CAP, CERM, 0.1 µF, 25 V, ±5%, X7R, 0603
AVX
06033C104JAT2A
33
C33
CAP, CERM, 0.1 µF, 25 V, ±5%, X7R, 0603
AVX
06033C104JAT2A
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Bill of Materials
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Table 7-1. Bill of Materials (continued)
Item
Designator
Description
ManµFacturer
PartNumber
34
C34
CAP, CERM, 0.1 µF, 25 V, ±5%, X7R, 0603
AVX
06033C104JAT2A
35
C35
CAP, CERM, 0.1 µF, 25 V, ±5%, X7R, 0603
AVX
06033C104JAT2A
36
C36
CAP, CERM, 0.1 µF, 25 V, ±5%, X7R, 0603
AVX
06033C104JAT2A
37
C37
CAP, CERM, 0.1 µF, 25 V, ±5%, X7R, 0603
AVX
06033C104JAT2A
38
D1
DIODE SCHOTTKY 40V 1A PMDU
Rohm
RB168MM-40TR
39
D2
DIODE SCHOTTKY 40V 1A PMDU
Rohm
RB168MM-40TR
40
D3
3V Clamp 9A (8/20µs) Ipp Tvs Diode Surface
Mount DSN0603-2
Nexperia
PESD5V0C1USF
41
D4
3V Clamp 9A (8/20µs) Ipp Tvs Diode Surface
Mount DSN0603-2
Nexperia
PESD5V0C1USF
42
D5
3V Clamp 9A (8/20µs) Ipp Tvs Diode Surface
Mount DSN0603-2
Nexperia
PESD5V0C1USF
43
D6
3V Clamp 9A (8/20µs) Ipp Tvs Diode Surface
Mount DSN0603-2
Nexperia
PESD5V0C1USF
44
H9
Bumpon, Hemisphere, 0.44 X 0.20, Clear
3M
SJ-5303 (CLEAR)
45
H10
Bumpon, Hemisphere, 0.44 X 0.20, Clear
3M
SJ-5303 (CLEAR)
46
H11
Bumpon, Hemisphere, 0.44 X 0.20, Clear
3M
SJ-5303 (CLEAR)
47
H12
Bumpon, Hemisphere, 0.44 X 0.20, Clear
3M
SJ-5303 (CLEAR)
48
J1
Connector, Receptacle, USB TYPE B, R/A, Top
Mount TH
Molex
67068-8000
49
J2
Connector, Receptacle, USB Standard, R/A, Top
Mount TH
Molex
676430910
50
J3
Header, 2.54mm, 3x1, Gold, SMT
Molex
87898-0304
51
J4
Header, 2.54mm, 3x1, Gold, SMT
Molex
87898-0304
52
J5
Header, 2.54mm, 3x1, Gold, SMT
Molex
87898-0304
53
J6
Header, 2.54mm, 3x1, Gold, SMT
Molex
87898-0304
54
J7
Header, 2.54mm, 3x1, Gold, SMT
Molex
87898-0304
55
J8
Header, 2.54mm, 3x1, Gold, SMT
Molex
87898-0304
56
J9
Header, 2.54mm, 3x1, Gold, SMT
Molex
87898-0304
57
J10
Header, 2.54mm, 3x1, Gold, SMT
Molex
87898-0304
58
J11
Header, 2.54mm, 3x1, Gold, SMT
Molex
87898-0304
59
J12
Header, 2.54 mm, 2x1, Gold, R/A, SMT
Molex
878980204
60
J13
Connector, Receptacle, USB TYPE B, R/A, Top
Mount TH
Molex
67068-8000
61
J14
Connector, Receptacle, USB Standard, R/A, Top
Mount TH
Molex
676430910
62
J15
Header, 2.54mm, 3x1, Gold, SMT
Molex
87898-0304
63
L1
Ferrite Bead, 1500 ohm @ 100 MHz, 0.5 A, 0603
MuRata
BLM18HE152SN1D
64
L2
Ferrite Bead, 1500 ohm @ 100 MHz, 0.5 A, 0603
MuRata
BLM18HE152SN1D
65
LBL1
Thermal Transfer Printable Labels, 0.650" W x
0.200" H - 10,000 per roll
Brady
THT-14-423-10
66
R1
RES, 97.6 k, 1%, 0.1 W, AEC-Q200 Grade 0,
0603
Vishay-Dale
CRCW060397K6FKEA
67
R2
RES, 30.1 k, 1%, 0.1 W, AEC-Q200 Grade 0,
0603
Vishay-Dale
CRCW060330K1FKEA
68
R3
RES, 53.6 k, 1%, 0.1 W, AEC-Q200 Grade 0,
0603
Vishay-Dale
CRCW060353K6FKEA
69
R4
RES, 30.1 k, 1%, 0.1 W, AEC-Q200 Grade 0,
0603
Vishay-Dale
CRCW060330K1FKEA
70
R5
RES, 15.0 k, 1%, 0.1 W, AEC-Q200 Grade 0,
0603
Vishay-Dale
CRCW060315K0FKEA
12
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Bill of Materials
Table 7-1. Bill of Materials (continued)
Item
Designator
Description
ManµFacturer
PartNumber
71
R6
RES, 30.1 k, 1%, 0.1 W, AEC-Q200 Grade 0,
0603
Vishay-Dale
CRCW060330K1FKEA
72
R7
RES, 53.6 k, 1%, 0.1 W, AEC-Q200 Grade 0,
0603
Vishay-Dale
CRCW060353K6FKEA
73
R8
RES, 30.1 k, 1%, 0.1 W, AEC-Q200 Grade 0,
0603
Vishay-Dale
CRCW060330K1FKEA
74
R9
RES, 15.0 k, 1%, 0.1 W, AEC-Q200 Grade 0,
0603
Vishay-Dale
CRCW060315K0FKEA
75
R10
RES, 30.1 k, 1%, 0.1 W, AEC-Q200 Grade 0,
0603
Vishay-Dale
CRCW060330K1FKEA
76
R11
RES, 0, 5%, 0.1 W, AEC-Q200 Grade 0, 0603
Vishay-Dale
CRCW06030000Z0EA
77
R12
RES, 0, 5%, 0.1 W, AEC-Q200 Grade 0, 0603
Vishay-Dale
CRCW06030000Z0EA
78
R13
RES, 0, 1%, 0.5 W, 0805
Keystone
5106
79
R14
RES, 0, 1%, 0.5 W, 0805
Keystone
5106
80
R15
RES, 0, 1%, 0.5 W, 0805
Keystone
5106
81
R16
RES, 0, 5%, 0.1 W, AEC-Q200 Grade 0, 0603
Vishay-Dale
CRCW06030000Z0EA
82
R17
RES, 0, 5%, 0.1 W, AEC-Q200 Grade 0, 0603
Vishay-Dale
CRCW06030000Z0EA
83
R18
RES, 0, 1%, 0.5 W, 0805
Keystone
5106
84
R19
RES, 0, 1%, 0.5 W, 0805
Keystone
5106
85
R20
RES, 0, 1%, 0.5 W, 0805
Keystone
5106
86
R21
RES, 0, 5%, 0.1 W, AEC-Q200 Grade 0, 0603
Vishay-Dale
CRCW06030000Z0EA
87
R22
RES, 0, 5%, 0.1 W, AEC-Q200 Grade 0, 0603
Vishay-Dale
CRCW06030000Z0EA
88
R23
RES, 0, 1%, 0.5 W, 0805
Keystone
5106
89
R24
RES, 0, 1%, 0.5 W, 0805
Keystone
5106
90
R25
RES, 0, 1%, 0.5 W, 0805
Keystone
5106
91
R26
RES, 0, 5%, 0.1 W, AEC-Q200 Grade 0, 0603
Vishay-Dale
CRCW06030000Z0EA
92
R27
RES, 0, 5%, 0.1 W, AEC-Q200 Grade 0, 0603
Vishay-Dale
CRCW06030000Z0EA
93
R28
RES, 0, 1%, 0.5 W, 0805
Keystone
5106
94
R29
RES, 0, 1%, 0.5 W, 0805
Keystone
5106
95
R30
RES, 0, 1%, 0.5 W, 0805
Keystone
5106
96
R31
RES, 2.40 k, 0.1%, 0.1 W, 0603
Susumu Co Ltd
RG1608P-242-B-T5
97
R32
RES, 2.40 k, 0.1%, 0.1 W, 0603
Susumu Co Ltd
RG1608P-242-B-T5
98
R33
RES, 2.40 k, 0.1%, 0.1 W, 0603
Susumu Co Ltd
RG1608P-242-B-T5
99
R34
RES, 2.40 k, 0.1%, 0.1 W, 0603
Susumu Co Ltd
RG1608P-242-B-T5
100
R35
RES, 4.70 k, 0.1%, 0.1 W, 0603
Yageo America
RT0603BRD074K7L
101
T1
Transformer, 110 uH, SMT
Wurth Elektronik
750315240
102
TP1
Test Point, Red, Through Hole, RoHS, Bulk
Keystone
5011
103
TP2
Test Point, Multipurpose, Black, TH
Keystone
5011
104
TP3
Test Point, Red, Through Hole, RoHS, Bulk
Keystone
5011
105
TP4
Test Point, Multipurpose, Black, TH
Keystone
5011
106
TP5
Test Point, Red, Through Hole, RoHS, Bulk
Keystone
5011
107
TP6
Test Point, Multipurpose, Black, TH
Keystone
5011
108
TP7
Test Point, Red, Through Hole, RoHS, Bulk
Keystone
5011
109
TP8
Test Point, Red, Through Hole, RoHS, Bulk
Keystone
5011
110
TP9
Test Point, Red, Through Hole, RoHS, Bulk
Keystone
5011
111
TP10
Test Point, Red, Through Hole, RoHS, Bulk
Keystone
5011
112
TP11
Test Point, Red, Through Hole, RoHS, Bulk
Keystone
5011
113
TP12
Test Point, Multipurpose, Black, TH
Keystone
5011
SBOU261 – OCTOBER 2021
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ISOUSB211DPEVM Isolated USB Evaluation Module
Copyright © 2021 Texas Instruments Incorporated
13
Bill of Materials
www.ti.com
Table 7-1. Bill of Materials (continued)
Item
Designator
Description
ManµFacturer
PartNumber
114
TP13
Test Point, Red, Through Hole, RoHS, Bulk
Keystone
5011
115
TP14
Test Point, Red, Through Hole, RoHS, Bulk
Keystone
5011
116
TP15
Test Point, Red, Through Hole, RoHS, Bulk
Keystone
5011
117
TP16
Test Point, Red, Through Hole, RoHS, Bulk
Keystone
5011
118
TP17
Test Point, Red, Through Hole, RoHS, Bulk
Keystone
5011
119
TP18
Test Point, Multipurpose, Black, TH
Keystone
5011
120
U1
High/Full/Low Speed Isolated USB Repeater,
SSOP28
Texas Instruments
ISOUSB211DP
121
U2
Low-Noise 1-A Transformer Driver for
Isolated Power Supplies, Internal Clock-160kHz,
DBV0006A (SOT-23-6)
Texas Instruments
SN6505ADBVR
122
U3
Single Output LDO, 1A, Adj. (1.2 to 5.0V),
Texas Instruments
Reverse Current Protection, DRB0008A (VSON-8)
TPS73701DRBT
123
U4
Single Output Fast Transient Response LDO, 1 A, Texas Instruments
Adjustable 1.5 to 5.5 V Output, 2.7 to 10 V Input,
with Low IQ, 8-pin SOIC (D), -40 to 125 degC,
Green (RoHS & no Sb/Br)
TPS76701QD
124
U5
Single Output Fast Transient Response LDO, 1 A, Texas Instruments
Adjustable 1.5 to 5.5 V Output, 2.7 to 10 V Input,
with Low IQ, 8-pin SOIC (D), -40 to 125 degC,
Green (RoHS & no Sb/Br)
TPS76701QD
125
U6
Single Output Fast Transient Response LDO, 1 A, Texas Instruments
Adjustable 1.5 to 5.5 V Output, 2.7 to 10 V Input,
with Low IQ, 8-pin SOIC (D), -40 to 125 degC,
Green (RoHS & no Sb/Br)
TPS76701QD
126
U7
Single Output Fast Transient Response LDO, 1 A, Texas Instruments
Adjustable 1.5 to 5.5 V Output, 2.7 to 10 V Input,
with Low IQ, 8-pin SOIC (D), -40 to 125 degC,
Green (RoHS & no Sb/Br)
TPS76701QD
127
U8
Dual-Channel High-Speed ESD Protection,
DRL0005A (SOT-OTHER-5)
Texas Instruments
TPD2E2U06DRLR
128
U9
Dual-Channel High-Speed ESD Protection,
DRL0005A (SOT-OTHER-5)
Texas Instruments
TPD2E2U06DRLR
14
ISOUSB211DPEVM Isolated USB Evaluation Module
Copyright © 2021 Texas Instruments Incorporated
SBOU261 – OCTOBER 2021
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