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LF347BDR

LF347BDR

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    SOIC14_150MIL

  • 描述:

    IC OPAMP JFET 4 CIRCUIT 14SOIC

  • 数据手册
  • 价格&库存
LF347BDR 数据手册
Product Folder Sample & Buy Technical Documents Support & Community Tools & Software LF347, LF347B SLOS013C – MARCH 1987 – REVISED MARCH 2016 LF347, LF347B JFET-Input Quad Operational Amplifiers 1 Features 3 Description • • • • • • The LF347 and LF347B devices are low-cost, highspeed, JFET-input operational amplifiers. They require low supply current yet maintain a large gainbandwidth product and a fast slew rate. In addition, their matched high-voltage JFET inputs provide very low input bias and offset current. 1 Low Input Bias Current: 50 pA Typical Low Input Noise Current: 0.01 pA/√Hz Typical Low Total Harmonic Distortion Low Supply Current: 8 mA Typical Gain Bandwidth: 3 MHz Typical High Slew Rate: 13 V/ms Typical 2 Applications • • • • • Motor Integrated Systems: UPS Drives and Control Solutions: AC Inverters and VF Drives Renewables: Solar Inverters Pro Audio Mixers Oscilloscopes The LF347 and LF347B can be used in applications such as high-speed integrators, digital-to-analog converters, sample-and-hold circuits, and many other circuits. The LF347 and LF347B devices are characterized for operation from 0°C to 70°C. Device Information(1) PART NUMBER PACKAGE BODY SIZE (NOM) LF347D, LF347BD SOIC (14) 8.65 mm × 3.91 mm LF347N, LF347BN PDIP (14) 19.30 mm × 6.35 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Symbol (Each Amplifier) IN – – IN + + OUT 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. LF347, LF347B SLOS013C – MARCH 1987 – REVISED MARCH 2016 www.ti.com Table of Contents 1 2 3 4 5 6 7 8 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 4 4 4 4 5 5 6 6 Absolute Maximum Ratings ...................................... ESD Ratings ............................................................ Recommended Operating Conditions....................... Thermal Information ................................................. Electrical Characteristics: LF347 .............................. Electrical Characteristics: LF347B ............................ Switching Characteristics .......................................... Typical Characteristics ............................................. Parameter Measurement Information .................. 7 Detailed Description .............................................. 8 8.1 Overview ................................................................... 8 8.2 Functional Block Diagram ......................................... 8 8.3 Feature Description................................................... 8 8.4 Device Functional Modes.......................................... 8 9 Application and Implementation .......................... 9 9.1 Application Information.............................................. 9 9.2 Typical Application ................................................... 9 10 Power Supply Recommendations ..................... 10 11 Layout................................................................... 10 11.1 Layout Guidelines ................................................. 10 11.2 Layout Example .................................................... 11 12 Device and Documentation Support ................. 12 12.1 12.2 12.3 12.4 12.5 12.6 Documentation Support ........................................ Related Links ........................................................ Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 12 12 12 12 12 12 13 Mechanical, Packaging, and Orderable Information ........................................................... 12 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision B (August 1994) to Revision C • 2 Page Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .................................................................................................. 1 Submit Documentation Feedback Copyright © 1987–2016, Texas Instruments Incorporated Product Folder Links: LF347 LF347B LF347, LF347B www.ti.com SLOS013C – MARCH 1987 – REVISED MARCH 2016 5 Pin Configuration and Functions D or N Package 14-Pin SOIC or PDIP Top View 1OUT 1 14 4OUT 1IN– 2 13 4IN– 1IN+ 3 12 4IN+ 4 11 V 2IN+ 5 10 3IN+ 2IN– 6 9 3IN– 2OUT 7 8 3OUT V CC+   CC–   Pin Functions PIN I/O DESCRIPTION NO. NAME 1 1OUT O Output pin of amplifier 1 2 1IN– I Inverting input pin of amplifier 1 Noninverting input pin of amplifier 1 3 1IN+ I 4 VCC+ — 5 2IN+ I Noninverting input pin of amplifier 2 Positive Supply 6 2IN– I Inverting input pin of amplifier 2 7 2OUT O Output pin of amplifier 2 8 3OUT O Output pin of amplifier 3 9 3IN– I Inverting input pin of amplifier 3 10 3IN+ I Noninverting input pin of amplifier 3 11 VCC– — 12 4IN+ I Noninverting input pin of amplifier 4 Negative Supply 13 4IN– I Inverting input pin of amplifier 4 14 4OUT O Output pin of amplifier 4 Submit Documentation Feedback Copyright © 1987–2016, Texas Instruments Incorporated Product Folder Links: LF347 LF347B 3 LF347, LF347B SLOS013C – MARCH 1987 – REVISED MARCH 2016 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN VCC+ Supply voltage VCC– Supply voltage VID Differential input voltage –30 VI Input voltage (2) –15 MAX UNIT 18 V –18 V 30 V 15 V Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260 °C TJ Operating virtual junction temperature 150 °C Tstg Storage temperature 150 °C (1) (2) –65 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Unless otherwise specified, the absolute maximum negative input voltage is equal to the negative power supply voltage. 6.2 ESD Ratings VALUE Electrostatic discharge V(ESD) (1) (2) Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) UNIT ±2000 Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) V ±1000 JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) TA free-air temperature VCC+ Supply voltage VCC– Supply voltage VCM Common-mode voltage TA Operating temperature MIN MAX 0 70 UNIT °C 3.5 18 V V –3.5 –18 VCC– + 4 VCC+ – 4 V 0 70 °C 6.4 Thermal Information LF347, LF347B THERMAL METRIC (1) D (SOIC) N (PDIP) 14 PINS 14 PINS UNIT RθJA Junction-to-ambient thermal resistance 74.4 42.7 °C/W RθJC(top) Junction-to-case (top) thermal resistance 32.5 29.2 °C/W RθJB Junction-to-board thermal resistance 28.9 22.6 °C/W ψJT Junction-to-top characterization parameter 3.7 13.5 °C/W ψJB Junction-to-board characterization parameter 28.6 22.5 °C/W (1) 4 For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 1987–2016, Texas Instruments Incorporated Product Folder Links: LF347 LF347B LF347, LF347B www.ti.com SLOS013C – MARCH 1987 – REVISED MARCH 2016 6.5 Electrical Characteristics: LF347 over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS VIO Input offset voltage VIC = 0, RS = 10 kΩ αVIO Average temperature coefficient of input offset voltage VIC = 0, RS = 10 kΩ IIO Input offset current (2) VIC = 0 Input bias current (2) IIB MAX 5 10 13 18 25°C 25 70°C 25°C VIC = 0 50 70°C Lower limit of range –11 –12 Upper limit of range 11 15 ±12 ±13.5 25°C 25 100 Full range 15 Common-mode input voltage VOM Maximum peak output voltage swing RL = 10 kΩ AVD Large signal differential voltage VO = ±10 V, RL = 2 kΩ ri Input resistance TA = 25°C CMRR Common-mode rejection ratio RS ≤ 2 kΩ kSVR Supply-voltage rejection ratio See ICC Supply current (3) TYP Full range (1) VICR (1) (2) MIN 25°C (3) UNIT mV µV/°C 100 pA 4 nA 200 pA 8 nA V V V/mV 1012 Ω 70 100 dB 70 100 8 dB 11 mA Full range is 0°C to 70°C. Input bias currents of a FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive. Pulse techniques must be used that will maintain the junction temperatures as close to the ambient temperature as possible. Supply-voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously. 6.6 Electrical Characteristics: LF347B over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS VIO Input offset voltage VIC = 0, RS = 10 kΩ αVIO Average temperature coefficient of input offset voltage VIC = 0, RS = 10 kΩ IIO Input offset current (2) VIC = 0 IIB Input bias current (2) MAX 3 5 7 18 25 70°C 25°C VIC = 0 50 70°C Lower limit of range –11 –12 Upper limit of range 11 15 ±12 ±13.5 25°C 50 100 Full range 25 Common-mode input voltage VOM Maximum peak output voltage swing RL = 10 kΩ AVD Large signal differential voltage VO = ±10 V, RL = 2 kΩ ri Input resistance TA = 25°C CMRR Common-mode rejection ratio RS ≤ 2 kΩ kSVR Supply-voltage rejection ratio See ICC Supply current (3) TYP Full range (1) 25°C VICR (1) (2) MIN 25°C (3) UNIT mV µV/°C 100 pA 4 nA 200 pA 8 nA V V V/mV 1012 Ω 80 100 dB 80 100 8 dB 11 mA Full range is 0°C to 70°C. Input bias currents of a FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive. Pulse techniques must be used that will maintain the junction temperatures as close to the ambient temperature as possible. Supply-voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously. Submit Documentation Feedback Copyright © 1987–2016, Texas Instruments Incorporated Product Folder Links: LF347 LF347B 5 LF347, LF347B SLOS013C – MARCH 1987 – REVISED MARCH 2016 www.ti.com 6.7 Switching Characteristics VCC± = ±15 V, TA= 25°C PARAMETER SR Slew rate at unity gain B1 Unity-gain bandwidth TEST CONDITIONS MIN TYP RL = 2 kΩ, See Figure 5 8 13 V/μs 3 MHz VI = 10 V, CL = 100 pF, VO1 / VO2 Crosstalk attenuation f = 1 kHZ f = 1 kHz Vn Equivalent input noise voltage RS = 20 Ω In Equivalent input noise current RS = 20 Ω, f = 10 Hz to 10 kHz f = 1 kHz MAX UNIT 120 dB 18 nV/√Hz 4 μV 0.01 pA/√Hz 6.8 Typical Characteristics 100 IIIB− IB Input Bias Current − nA VCC± = ±15 V 10 1 0.1 0.01 −75 −50 −25 0 25 50 75 100 125 TA − Free-Air Temperature − °C Figure 1. Input Bias Current vs Free-Air Temperature Figure 3. Maximum Peak Output Voltage vs Load Resistance 6 Figure 2. Maximum Peak Output Voltage vs Frequency Figure 4. Large-Signal Differential Voltage Amplification and Phase Shift vs Frequency Submit Documentation Feedback Copyright © 1987–2016, Texas Instruments Incorporated Product Folder Links: LF347 LF347B LF347, LF347B www.ti.com SLOS013C – MARCH 1987 – REVISED MARCH 2016 7 Parameter Measurement Information − OUT VI + CL = 100 pF RL = 2 kΩ Figure 5. Unity-Gain Amplifier Submit Documentation Feedback Copyright © 1987–2016, Texas Instruments Incorporated Product Folder Links: LF347 LF347B 7 LF347, LF347B SLOS013C – MARCH 1987 – REVISED MARCH 2016 www.ti.com 8 Detailed Description 8.1 Overview The LF347 is a JFET-input operational amplifier with low input bias and offset currents and fast slew rate. Each amplifier features JFET inputs (for high input impedance) coupled with bipolar output stages integrated on a single monolithic chip. The output is protected against shorts due to the resistive 200-Ω output impedance. 8.2 Functional Block Diagram 8.3 Feature Description 8.3.1 Slew Rate The slew rate is the rate at which an operational amplifier can change its output when there is a change on the input. These devices have a 13-V/μs slew rate. 8.4 Device Functional Modes These devices are powered on when the supply is connected. This device can be operated as a single-supply operational amplifier or dual-supply amplifier depending on the application. 8 Submit Documentation Feedback Copyright © 1987–2016, Texas Instruments Incorporated Product Folder Links: LF347 LF347B LF347, LF347B www.ti.com SLOS013C – MARCH 1987 – REVISED MARCH 2016 9 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 9.1 Application Information The LF347 has four independent amplifiers that have very low input bias current which allow using higher resistance resistors in the feedback network. The upper input common mode range typically goes to the positive supply rail. The lower common mode range does not include the negative supply rail; it must be at least 4-V greater. Output resistance is 200 Ω to protect the device from accidental shorts. 9.2 Typical Application A typical application for an operational amplifier is an inverting amplifier. This amplifier takes a positive voltage on the input, and makes it a negative voltage of the same magnitude. In the same manner, it also makes negative voltages positive. RF RI Vsup+ VOUT + VIN Vsup- Figure 6. Inverting Amplifier 9.2.1 Design Requirements The supply voltage must be chosen such that it is larger than the input voltage range and output range. For instance, this application scales a signal of ±0.5 V to ±1.8 V. Setting the supply at ±12 V is sufficient to accommodate this application. 9.2.2 Detailed Design Procedure Determine the gain required by the inverting amplifier: VOUT AV = VIN 1.8 AV = = -3.6 -0.5 (1) (2) When the desired gain is determined, choose a value for RI or RF. Choosing a value in the kΩ range is desirable because the amplifier circuit uses currents in the milliamp range. This ensures the part does not draw too much current. For this example, choose 10 kΩ for RI which means 36 kΩ is used for R, as determined by Equation 3. RF AV = (3) RI Submit Documentation Feedback Copyright © 1987–2016, Texas Instruments Incorporated Product Folder Links: LF347 LF347B 9 LF347, LF347B SLOS013C – MARCH 1987 – REVISED MARCH 2016 www.ti.com Typical Application (continued) 9.2.3 Application Curve 2 VIN 1.5 VOUT 1 Volts 0.5 0 -0.5 -1 -1.5 -2 0 0.5 1 Time (ms) 1.5 2 Figure 7. Input and Output Voltages of the Inverting Amplifier 10 Power Supply Recommendations CAUTION Supply voltages larger than 36 V for a single-supply or outside the range of ±18 V for a dual-supply can permanently damage the device (see Absolute Maximum Ratings). Place the 0.1-μF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or high-impedance power supplies. For more detailed information on bypass capacitor placement, see Layout Example. 11 Layout 11.1 Layout Guidelines For best operational performance of the device, use good PCB layout practices, including: • Noise can propagate into analog circuitry through the power pins of the circuit as a whole, as well as the operational amplifier. Bypass capacitors are used to reduce the coupled noise by providing low impedance power sources local to the analog circuitry. – Connect low-ESR, 0.1-μF ceramic bypass capacitors between each supply pin and ground, placed as close to the device as possible. A single bypass capacitor from V+ to ground is applicable for single supply applications. • Separate grounding for analog and digital portions of circuitry is one of the simplest and most-effective methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to ground planes. A ground plane helps distribute heat and reduces EMI noise pickup. Make sure to physically separate digital and analog grounds, paying attention to the flow of the ground current. For more detailed information, see the chapter extract, Circuit Board Layout Techniques (SLOA089). • To reduce parasitic coupling, run the input traces as far away from the supply or output traces as possible. If it is not possible to keep them separate, it is much better to cross the sensitive trace perpendicular as opposed to in parallel with the noisy trace. • Place the external components as close to the device as possible. Keeping RF and RG close to the inverting 10 Submit Documentation Feedback Copyright © 1987–2016, Texas Instruments Incorporated Product Folder Links: LF347 LF347B LF347, LF347B www.ti.com SLOS013C – MARCH 1987 – REVISED MARCH 2016 Layout Guidelines (continued) • • input minimizes parasitic capacitance, as shown in Layout Example. Keep the length of input traces as short as possible. Always remember that the input traces are the most sensitive part of the circuit. Consider a driven, low-impedance guard ring around the critical traces. A guard ring can significantly reduce leakage currents from nearby traces that are at different potentials. 11.2 Layout Example Figure 8. Operational Amplifier Board Layout for Noninverting Configuration VIN RIN RG + VOUT RF Figure 9. Operational Amplifier Schematic for Noninverting Configuration Submit Documentation Feedback Copyright © 1987–2016, Texas Instruments Incorporated Product Folder Links: LF347 LF347B 11 LF347, LF347B SLOS013C – MARCH 1987 – REVISED MARCH 2016 www.ti.com 12 Device and Documentation Support 12.1 Documentation Support 12.1.1 Related Documentation For related documentation, see the following Circuit Board Layout Techniques, SLOA089 12.2 Related Links The table below lists quick access links. Categories include technical documents, support and community resources, tools and software, and quick access to sample or buy. Table 1. Related Links PARTS PRODUCT FOLDER SAMPLE & BUY TECHNICAL DOCUMENTS TOOLS & SOFTWARE SUPPORT & COMMUNITY LF347 Click here Click here Click here Click here Click here LF347B Click here Click here Click here Click here Click here 12.3 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 12.4 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 12.5 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 12.6 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 12 Submit Documentation Feedback Copyright © 1987–2016, Texas Instruments Incorporated Product Folder Links: LF347 LF347B PACKAGE OPTION ADDENDUM www.ti.com 20-Aug-2021 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) LF347BD ACTIVE SOIC D 14 50 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 LF347B LF347BDR ACTIVE SOIC D 14 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 LF347B LF347BN ACTIVE PDIP N 14 25 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 LF347BN LF347D ACTIVE SOIC D 14 50 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 LF347 LF347DG4 ACTIVE SOIC D 14 50 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 LF347 LF347DR ACTIVE SOIC D 14 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 LF347 LF347DRG4 ACTIVE SOIC D 14 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 LF347 LF347N ACTIVE PDIP N 14 25 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 LF347N LF347NE4 ACTIVE PDIP N 14 25 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 LF347N (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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