LF353-N
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SNOSBH3F – APRIL 1998 – REVISED MARCH 2013
LF353-N Wide Bandwidth Dual JFET Input Operational Amplifier
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FEATURES
DESCRIPTION
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These devices are low cost, high speed, dual JFET
input operational amplifiers with an internally trimmed
input offset voltage (BI-FET II technology). They
require low supply current yet maintain a large gain
bandwidth product and fast slew rate. In addition, well
matched high voltage JFET input devices provide
very low input bias and offset currents. The LF353-N
is pin compatible with the standard LM1558 allowing
designers to immediately upgrade the overall
performance of existing LM1558 and LM358 designs.
1
2
Internally Trimmed Offset Voltage: 10 mV
Low Input Bias Current: 50pA
Low Input Noise Voltage: 25 nV/√Hz
Low Input Noise Current: 0.01 pA/√Hz
Wide Gain Bandwidth: 4 MHz
High Slew Rate: 13 V/μs
Low Supply Current: 3.6 mA
High Input Impedance: 1012Ω
Low Total Harmonic Distortion : ≤0.02%
Low 1/f Noise Corner: 50 Hz
Fast Settling Time to 0.01%: 2 μs
These amplifiers may be used in applications such as
high speed integrators, fast D/A converters, sample
and hold circuits and many other circuits requiring low
input offset voltage, low input bias current, high input
impedance, high slew rate and wide bandwidth. The
devices also exhibit low noise and offset voltage drift.
Typical Connection
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 1998–2013, Texas Instruments Incorporated
LF353-N
SNOSBH3F – APRIL 1998 – REVISED MARCH 2013
www.ti.com
Simplified Schematic
Figure 1. 1/2 Dual
Dual-In-Line Package
Top View
Figure 2. 8-Pin SOIC (See D Package)
8-Pin PDIP (See P Package)
2
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Copyright © 1998–2013, Texas Instruments Incorporated
Product Folder Links: LF353-N
LF353-N
www.ti.com
SNOSBH3F – APRIL 1998 – REVISED MARCH 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings (1) (2)
Supply Voltage
±18V
See (3)
Power Dissipation
Operating Temperature Range
0°C to +70°C
Tj(MAX)
150°C
Differential Input Voltage
±30V
Input Voltage Range (4)
±15V
Output Short Circuit Duration
Continuous
Storage Temperature Range
−65°C to +150°C
Lead Temp. (Soldering, 10 sec.)
260°C
Soldering Information: Dual-In-Line Package Soldering (10 sec.)
260°C
Small Outline Package
215°C
Vapor Phase (60 sec.)
Infrared (15 sec.)
220°C
ESD Tolerance (5)
1000V
θJA D Package
(1)
(2)
(3)
(4)
(5)
TBD
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not ensured for parameters where no limit is given, however, the typical value is a good indication
of device performance.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
For operating at elevated temperatures, the device must be derated based on a thermal resistance of 115°C/W typ junction to ambient
for the P package, and 160°C/W typ junction to ambient for the D package.
Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Human body model, 1.5 kΩ in series with 100 pF.
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Copyright © 1998–2013, Texas Instruments Incorporated
Product Folder Links: LF353-N
3
LF353-N
SNOSBH3F – APRIL 1998 – REVISED MARCH 2013
www.ti.com
DC Electrical Characteristics
Symbol
VOS
Parameter
Input Offset Voltage
LF353-N
Conditions
MIn
Typ
Max
RS=10kΩ, TA=25°C
Over Temperature
5
10
13
ΔVOS/ΔT
Average TC of Input Offset Voltage
RS=10 kΩ
10
IOS
Input Offset Current
Tj=25°C (1) (2)
25
Tj≤70°C
Tj=25°C (1) (2)
IB
Input Bias Current
RIN
Input Resistance
Tj=25°C
AVOL
Large Signal Voltage Gain
VS=±15V, TA=25°C
50
Tj≤70°C
25
Units
mV
mV
μV/°C
100
pA
4
nA
200
pA
8
nA
1012
Ω
100
V/mV
VO=±10V, RL=2 kΩ
Over Temperature
15
VO
Output Voltage Swing
VS=±15V, RL=10kΩ
±12
±13.5
V/mV
V
VCM
Input Common-Mode Voltage
VS=±15V
±11
+15
V
−12
V
CMRR
Common-Mode Rejection Ratio
RS≤ 10kΩ
70
100
dB
PSRR
Supply Voltage Rejection Ratio
See (3)
70
100
dB
IS
Supply Current
Range
3.6
6.5
mA
These specifications apply for VS=±15V and 0°C≤TA≤+70°C. VOS, IBand IOS are measured at VCM=0.
The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction temperature,
Tj. Due to the limited production test time, the input bias currents measured are correlated to junction temperature. In normal operation
the junction temperature rises above the ambient temperature as a result of internal power dissipation, PD. Tj=TA+θjA PD where θjA is the
thermal resistance from junction to ambient. Use of a heat sink is recommended if input bias current is to be kept to a minimum.
Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with
common practice. VS = ±6V to ±15V.
(1)
(2)
(3)
AC Electrical Characteristics (1)
Symbol
Parameter
LF353-N
Conditions
Min
Amplifier to Amplifier Coupling
TA=25°C, f=1 Hz−20 kHz
(Input Referred)
SR
Slew Rate
VS=±15V, TA=25°C
8.0
GBW
Gain Bandwidth Product
VS=±15V, TA=25°C
2.7
en
Equivalent Input Noise Voltage
TA=25°C, RS=100Ω, f=1000 Hz
in
Equivalent Input Noise Current
THD
Total Harmonic Distortion
(1)
4
Typ
Max
Units
−120
dB
13
V/μs
4
MHz
16
nV/√Hz
Tj=25°C, f=1000 Hz
0.01
pA/√Hz
AV=+10, RL=10k, VO=20Vp−p,
BW=20 Hz-20 kHz
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