LF411CP

LF411 JFET-INPUT OPERATIONAL AMPLIFIER SLOS011C – MARCH 1987 – REVISED OCTOBER 1997 D D D D D D D D OR P PACKAGE (TOP VIEW) Low Input Bias Current, 50 pA Typ Low Input Noise Current, 0.01 pA/√Hz Typ Low Supply Current, 2 mA Typ High Input impedance, 1012 Ω Typ Low Total Harmonic Distortion Low 1/f Noise Corner, 50 Hz Typ Package Options Include Plastic Small-Outline (D) and Standard (P) DIPs BAL1 IN – IN + VCC – 1 8 2 7 3 6 4 5 NC VCC + OUT BAL2 NC – No internal connection description This device is a low-cost, high-speed, JFET-input operational amplifier with very low input offset voltage and a maximum input offset voltage drift. It requires low supply current, yet maintains a large gain-bandwidth product and a fast slew rate. In addition, the matched high-voltage JFET input provides very low input bias and offset currents. The LF411 can be used in applications such as high-speed integrators, digital-to-analog converters, sample-and-hold circuits, and many other circuits. The LF411C is characterized for operation from 0°C to 70°C. The LF411I is characterized for operation from –40°C to 85°C. symbol IN – IN + BAL1 BAL2 2 – 3 6 OUT + 1 5 AVAILABLE OPTIONS TA VIOmax AT 25°C 0°C to 70°C –40°C to 85°C PACKAGE SMALL OUTLINE (D) PLASTIC DIP (P) 2 mV LF411CD LF411CP 2 mV LF411ID LF411IP The D packages are available taped and reeled. Add the suffix R to the device type (i.e., LF411CDR). Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. Copyright  1997, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 1 LF411 JFET-INPUT OPERATIONAL AMPLIFIER SLOS011C – MARCH 1987 – REVISED OCTOBER 1997 absolute maximum ratings over operating free-air temperature range (unless otherwise noted) Supply voltage, VCC + . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V Supply voltage, VCC – . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 18 V Differential input voltage, VID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 30 V Input voltage, VI (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 15 V Duration of output short circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Unlimited Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Package thermal impedance, θJA (see Note 2): D package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197°C/W P package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104°C/W Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C NOTES: 1. Unless otherwise specified, the absolute maximum negative input voltage is equal to the negative power supply voltage. 2. The package thermal impedance is calculated in accordance with JESD 51, except for through-hole packages, which use a trace length of zero. recommended operating conditions C SUFFIX I SUFFIX MIN MIN MAX MAX UNIT Supply voltage, VCC + 3.5 18 3.5 18 V Supply voltage, VCC – – 3.5 – 18 – 3.5 – 18 V 0 70 – 40 –85 °C Operating free-air temperature, TA electrical characteristics over operating free-air temperature range, VCC ± = ±15 V (unless otherwise specified) PARAMETER TA TEST CONDITIONS VIO Input offset voltage VIC = 0, RS = 10 kΩ αVIO Average temperature coefficient of input offset voltage VIC = 0, RS = 10 kΩ IIO Inp t offset current Input c rrent‡ VIC = 0 IIB Inp t bias current Input c rrent‡ VIC = 0 LF411C LF411I 25°C 25°C 25°C 25°C 70°C 85°C 25°C 25°C 70°C 85°C MIN TYP MAX 0.8 2 10 20† µV/°C 25 100 pA 2 nA 200 pA 4 nA 50 UNIT mV ± 11 –11.5 to 14.5 V ± 12 ± 13.5 V VICR Common-mode input voltage range VOM Maximum peak output-voltage swing RL = 10 kΩ AVD Large-signal g g differential voltage VO = ± 10 V V, ri Input resistance TJ = 25°C CMR R Common-mode rejection ratio RS ≤ 10 kΩ 70 100 dB kSVR Supply-voltage rejection ratio See Note 3 70 100 dB RL = 2 kΩ 25°C 25°C 25 200 0°C to 70°C –40°C to 85°C 15 200 1012 V/mV Ω ICC Supply current 2 3.4 mA † At least 90% of the devices meet this limit for αVIO. ‡ Input bias currents of an FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive. Pulse techniques must be used that will maintain the junction temperatures as close to the ambient temperature as possible. NOTE 3: Supply-voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously. 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 LF411 JFET-INPUT OPERATIONAL AMPLIFIER SLOS011C – MARCH 1987 – REVISED OCTOBER 1997 operating characteristics, VCC± = ±15 V, TA = 25°C PARAMETER TEST CONDITIONS SR Slew rate B1 Vn Unity-gain bandwidth Equivalent input noise voltage f = 1 kHz, In Equivalent input noise current f = 1 kHz MIN TYP 8 13 2.7 POST OFFICE BOX 655303 RS = 20 Ω • DALLAS, TEXAS 75265 MAX UNIT V/µs 3 MHz 18 nV/√Hz 0.01 pA/√Hz 3 PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) LF411CD ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM 0 to 70 LF411C LF411CDR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM 0 to 70 LF411C LF411CDRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM 0 to 70 LF411C LF411CP ACTIVE PDIP P 8 50 Green (RoHS & no Sb/Br) NIPDAU N / A for Pkg Type 0 to 70 LF411CP LF411CPE4 ACTIVE PDIP P 8 50 Green (RoHS & no Sb/Br) NIPDAU N / A for Pkg Type 0 to 70 LF411CP (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of