LHV870LC/NOPB

Not Recommended For New Designs LHV870 www.ti.com SNOSB50B – MAY 2011 – REVISED MAY 2013 LHV870 44V Single High Performance, High Voltage Operational Amplifier Check for Samples: LHV870 FEATURES DESCRIPTION • • • The LHV870 is an ultra-low distortion, low noise, high slew rate operational amplifier optimized and fully specified for high performance, high voltage applications. Combining advanced leading-edge process technology with state-of-the-art circuit design, the LHV870 operational amplifier delivers superior signal amplification for outstanding performance. The LHV870 combines extremely low voltage noise density (2.7nV/√Hz) with vanishingly low DC Gain Linearity Error (0.000009%) to easily satisfy the most demanding applications. To ensure that the most challenging loads are driven without compromise, the LHV870 has a high slew rate of ±20V/μs and an output current capability of ±26mA. Further, dynamic range is maximized by an output stage that drives 2kΩ loads to within 1V of either power supply voltage and to within 1.4V when driving 600Ω loads. 1 2 Easily Drives 600Ω Loads Output Short Circuit Protection PSRR and CMRR Exceed 120dB (Typ) APPLICATIONS • • • • • • Low Noise Industrial Applications Including Test, Measurement, and Ultrasound High Quality Audio Amplification High Fidelity Preamplifiers, Phono Preamps, and Multimedia High Performance Professional Audio High Fidelity Equalization and Crossover Networks with Active Filters High Performance Line Drivers and Receivers KEY SPECIFICATIONS • • • • • • • • • Power Supply Voltage Range ±2.5V to ±22 V Input Noise Density 2.7nV/√Hz (Typ) Slew Rate ±20V/μs (Typ) Gain Bandwidth Product 55 MHz (Typ) Open Loop Gain (RL = 600Ω) 140 dB (Typ) Input Bias Current 10nA (Typ) Input Offset Voltage 0.1mV (Typ) DC Gain Linearity Error 0.000009% THD+N (AV = 1, VOUT = 3VRMS, fIN = 1kHz) – RL = 2kΩ 0.00003% (Typ) – RL = 600Ω 0.00003% (Typ) 100 The LHV870's outstanding CMRR (120dB), PSRR (120dB), and VOS (0.1mV) give the amplifier excellent DC performance. The LHV870 operates over a wide supply range of ±2.5V to ±22V and is unity gain stable. This operational amplifier achieves outstanding AC performance while driving complex loads with values as high as 100pF. The LHV870 is available in 10-lead WQFN package. 100 180 VS = 30V 160 10 10 2.7 nV/Hz GAIN (dB), PHASE LAG (°) VOLTAGE NOISE (nV/Hz) VCM = 15V 140 120 100 80 60 40 20 0 1 1 10 100 1000 1 10000 100000 FREQUENCY (Hz) -20 10 100 1k 10k 100k 1M 10M 100M FREQUENCY (Hz) 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2011–2013, Texas Instruments Incorporated Not Recommended For New Designs LHV870 SNOSB50B – MAY 2011 – REVISED MAY 2013 www.ti.com Connection Diagram VCC NC 1 NC 10 9 OUTPUT 1 2 8 NC NC 3 7 IN-1 NC 4 6 IN+1 5 VEE/GND Figure 1. See Package Number – NKY0010A These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ABSOLUTE MAXIMUM RATINGS (1) (2) (3) Power Supply Voltage (VS = V+ - V-) 46V −65°C to 150°C Storage Temperature Input Voltage (V-) - 0.7V to (V+) + 0.7V Output Short Circuit (4) Continuous Power Dissipation Internally Limited ESD Rating (5) ESD Rating (6) 2000V Pins 1, 4, 7 and 8 200V Pins 2, 3, 5 and 6 100V Junction Temperature Thermal Resistance (1) (2) (3) (4) (5) (6) 2 150°C θJA (WQFN) 168°C/W “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. All voltages are measured with respect to the ground pin, unless otherwise specified. The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not ensured. If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications. The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature, TA. The maximum allowable power dissipation is PDMAX = (TJMAX - TA) / θJA or the number given in Absolute Maximum Ratings, whichever is lower. Human body model, applicable std. JESD22-A114C. Machine model, applicable std. JESD22-A115-A. Submit Documentation Feedback Copyright © 2011–2013, Texas Instruments Incorporated Product Folder Links: LHV870 Not Recommended For New Designs www.ti.com LHV870 SNOSB50B – MAY 2011 – REVISED MAY 2013 OPERATING RATINGS Temperature Range (TMIN ≤ TA ≤ TMAX) −40°C ≤ TA ≤ 85°C Supply Voltage Range ±2.5V ≤ VS ≤ ±22V ELECTRICAL CHARACTERISTICS FOR THE LHV870 (1) The following specifications apply for VS = ±18V and ±22V, RL = 2kΩ, RSOURCE = 10Ω, fIN = 1kHz, TA = 25°C, unless otherwise specified. Symbol THD+N IMD Parameter Conditions LHV870 Typical (2) Limit (3) Units (Limits) Total Harmonic Distortion + Noise AV = 1, VOUT = 3VRMS, RL = 2kΩ 0.00003 % Intermodulation Distortion AV = 1, VOUT = 3VRMS Two-tone, 60Hz & 7kHz 4:1 0.00005 % GBWP Gain Bandwidth Product 55 SR Slew Rate ±20 45 MHz (min) V/μs 10 MHz μs FPBW Full Power Bandwidth VOUT = 1VP-P, –3dB referenced to output magnitude at f = 1kHz ts Settling time AV = –1, 10V step, CL = 100pF 0.1% error range 1.2 Equivalent Input Noise Voltage fBW = 20Hz to 20kHz 0.34 0.65 μVRMS (max) Equivalent Input Noise Density f = 1kHz 2.5 4.7 nV/√Hz (max) Current Noise Density f = 1kHz en in VOS Offset Voltage ΔVOS/ΔTemp Average Input Offset Voltage Drift vs Temperature 1.6 VS = ±18V ±0.12 VS = ±22V ±0.14 –40°C ≤ TA ≤ 85°C VS = ±18V, ΔVS = 24V VS = ±22V, ΔVS = 30V IB Input Bias Current ΔIOS/ΔTemp Input Bias Current Drift vs Temperature IOS Input Offset Current VCM = 0V 11 VS = ±18V +17.1 –16.9 VS = ±22V +21.0 –20.8 VIN-CM CMRR ZIN (1) (2) (3) (4) 110 VCM = 0V 10 300 –40°C ≤ TA ≤ 85°C 0.2 dB (min) nA (max) nA/°C 100 nA (max) V V (V+) – 2.0 (V-) + 2.0 V (min) V (min) VS = ±18V –12V≤VCM≤12V 120 VS = ±22V –15V≤VCM≤15V 120 30 kΩ –10V