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LM25101
SNVS859C – JULY 2012 – REVISED SEPTEMBER 2016
LM25101 3-A, 2-A, and 1-A 80-V Half-Bridge Gate Drivers
1 Features
3 Description
•
•
•
The LM25101 high-voltage gate driver is designed to
drive both the high-side and the low-side N-Channel
MOSFETs in a synchronous buck or a half-bridge
configuration. The A version provides a full 3-A of
gate drive while the B and C versions provide 2-A
and 1-A, respectively. The outputs are independently
controlled with TTL input thresholds. An integrated
high voltage diode is provided to charge the high-side
gate drive bootstrap capacitor. A robust level shifter
operates at high speed while consuming low power
and providing clean level transitions from the control
logic to the high-side gate driver. Undervoltage
lockout is provided on both the low-side and the highside power rails.
1
•
•
•
•
•
•
Independent High and Low Driver Logic Inputs
Bootstrap Supply Voltage up to 100-V DC
Drives Both a High-Side and Low-Side N-Channel
MOSFETs
Fast Propagation Times (25 ns Typical)
Drives 1000-pF Load With 8-ns Rise and Fall
Times
Excellent Propagation Delay Matching (3 ns
Typical)
Supply Rail Undervoltage Lockout
Low Power Consumption
Pin Compatible With HIP2100 and HIP2101
These devices are available in the standard 8-pin
SOIC, 8-pin SO-PowerPAD, 8-pin WSON, 10-pin
WSON, and 8-pin MSOP PowerPAD packages.
2 Applications
•
•
•
•
•
•
•
Motor-Controlled Drivers
Half and Full Bridge Power Converters
Synchronous Buck Converters
Two Switch Forward Power Converters
Forward With Active Clamp Converters
48-V Server Power
Solar DC-DC and DC-AC Converters
Device Information(1)
PART NUMBER
LM25101
PACKAGE
BODY SIZE (NOM)
MSOP PowerPAD (8)
3 mm × 3 mm
WSON (8)
4 mm × 4 mm
WSON (10)
4 mm × 4 mm
SO PowerPAD (8)
3.9 mm × 4.89 mm
SOIC (8)
3.91 mm × 4.9 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Application Diagram
Optional external
fast recovery diode
VIN
Anti-Parallel Diode
(Optional)
VCC
RBOOT
DBOOT
HB
RGATE
HO
VDD
VDD
CBOOT
0.1µF
PWM
Controller
HI
OUT1
HS
T1
LM25101
RGATE
LI
OUT2
LO
1.0µF
VSS
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM25101
SNVS859C – JULY 2012 – REVISED SEPTEMBER 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Options.......................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
4
7.1
7.2
7.3
7.4
7.5
7.6
7.7
4
5
5
5
6
7
8
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Switching Characteristics ..........................................
Typical Characteristics ..............................................
Detailed Description ............................................ 12
8.1 Overview ................................................................. 12
8.2 Functional Block Diagram ....................................... 12
8.3 Feature Description................................................. 12
8.4 Device Functional Modes........................................ 13
9
Application and Implementation ........................ 14
9.1 Application Information............................................ 14
9.2 Typical Application .................................................. 14
10 Power Supply Recommendations ..................... 16
11 Layout................................................................... 17
11.1 Layout Guidelines ................................................. 17
11.2 Layout Example .................................................... 18
12 Device and Documentation Support ................. 19
12.1
12.2
12.3
12.4
12.5
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
19
19
19
19
19
13 Mechanical, Packaging, and Orderable
Information ........................................................... 19
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (March 2013) to Revision C
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section. ................................................................................................. 1
•
Added Thermal Information table ........................................................................................................................................... 5
Changes from Original (March 2013) to Revision A
•
2
Page
Changed layout of National Semiconductor Data Sheet to TI format .................................................................................... 1
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SNVS859C – JULY 2012 – REVISED SEPTEMBER 2016
5 Device Options
Table 1. Input/Output Options
Part Number
Input Thresholds
Peak Output Current
LM25101A
TTL
3A
LM25101B
TTL
2A
LM25101C
TTL
1A
6 Pin Configuration and Functions
DGN and DDA Packages
8-Pin MSOP and SO PowerPAD
Top View
VDD
1
HB
2
D Package
8-Pin SOIC
Top View
8
LO
7
VDD
1
8
LO
VSS
HB
2
7
VSS
PowerPAD
HO
3
6
LI
HO
3
6
LI
HS
4
5
HI
HS
4
5
HI
Not to scale
Not to scale
NGT Package
8-Pin WSON
Top View
VDD
1
HB
2
DPR Package
10-Pin WSON
Top View
8
LO
7
VDD
1
10
LO
VSS
HB
2
9
VSS
8
LI
Thermal Pad
Thermal Pad
HO
3
6
LI
HO
3
HS
4
5
HI
HS
4
7
HI
NC
5
6
NC
Not to scale
Not to scale
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SNVS859C – JULY 2012 – REVISED SEPTEMBER 2016
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Pin Functions
PIN
MSOP
PowerPAD
NAME
WSON
(8)
WSON
(10)
SO
PowerPAD
SOIC
TYPE
DESCRIPTION
HB
2
2
2
2
2
PWR
High-side gate driver bootstrap rail. Connect the positive
terminal of the bootstrap capacitor to HB and the
negative terminal to HS. The bootstrap capacitor should
be placed as close to the IC as possible.
HI
5
5
7
5
5
I
High-side driver control input. The LM25101 inputs have
TTL type thresholds. Unused inputs should be tied to
ground and not left open.
HO
3
3
3
3
3
O
High-side gate driver output. Connect to the gate of
high-side MOSFET with a short, low inductance path.
HS
4
4
4
4
4
GND
High-side MOSFET source connection. Connect to the
bootstrap capacitor negative terminal and the source of
the high-side MOSFET.
LI
6
6
8
6
6
I
Low-side driver control input. The LM25101 inputs have
TTL type thresholds. Unused inputs should be tied to
ground and not left open.
LO
8
8
10
8
8
O
Low-side gate driver output. Connect to the gate of the
low-side MOSFET with a short, low inductance path.
NC
—
—
5, 6
—
—
—
No connection
VDD
1
1
1
1
1
PWR
Positive gate drive supply. Locally decouple to VSS
using a low ESR and ESL capacitor located as close to
the IC as possible.
VSS
7
7
9
7
7
GND
Ground return. All signals are referenced to this ground.
PowerPAD
Thermal
Pad
Thermal
Pad
PowerPAD
—
—
Thermal
Pad
(1)
Solder to the ground plane under the IC to aid in heat
dissipation. (1)
TI recommends that the exposed thermal pad on the bottom of the applicable packages is soldered to ground plane of the PCB, and the
ground plane should extend out from beneath the IC to help dissipate heat.
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
UNIT
VDD to VSS
−0.3
18
V
HB to HS
−0.3
18
V
LI or HI Input
−0.3
VDD + 0.3
V
LO Output
−0.3
VDD + 0.3
V
HO Output
VHS - 0.3
VHB + 0.3
V
–5
100
V
HS to VSS (2)
HB to VSS
100
V
Junction temperature, TJ
150
°C
150
°C
Storage temperature, Tstg
(1)
(2)
4
–55
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. For
performance limits and associated test conditions, see the Electrical Characteristics tables.
In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS node will generally not
exceed –1 V. However, in some applications, board resistance and inductance may result in the HS node exceeding this stated voltage
transiently. If negative transients occur, the HS voltage must never be more negative than VDD – 15 V. For example, if VDD = 10 V, the
negative transients at HS must not exceed –5 V.
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7.2 ESD Ratings
VALUE
Human-body model (HBM), per
ANSI/ESDA/JEDEC JS-001 (1)
V(ESD)
(1)
(2)
Electrostatic discharge
All pins except 2, 3, and 4
±2000
Pins 2, 3, and 4
±1000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±250
Machine model (MM)
±100
UNIT
V
The Human Body Model (HBM) is a 100-pF capacitor discharged through a 1.5-kΩ resistor into each pin.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
9
14
V
HS
–1
100 – VDD
V
HB
VHS + 8
VHS + 14
VDD
Supply voltage
VDD
VHS
Voltage
VHB
Voltage
HS slew rate
TJ
Junction temperature
–40
UNIT
V
50
V/ns
125
°C
7.4 Thermal Information
LM25101A, LM25101B
THERMAL METRIC
(1)
LM25101C
D (SOIC)
DDA (SO
PowerPAD)
NGT
(WSON)
DPR
(WSON)
D (SOIC)
DPR
(WSON)
DGN (MSOP
PowerPAD)
UNIT
8 PINS
8 PINS
8 PINS
10 PINS
8 PINS
10 PINS
8 PINS
RθJA
Junction-to-ambient thermal
resistance
108.2
46.1
38.2
37.8
111.5
39.8
54.1
°C/W
RθJC(top)
Junction-to-case (top) thermal
resistance
50.6
53.5
36.3
35.8
54.2
39.1
55.9
°C/W
RθJB
Junction-to-board thermal resistance
49.1
13.8
15.2
15.0
52.3
17.1
15.1
°C/W
ψJT
Junction-to-top characterization
parameter
7.6
4.2
0.3
0.3
9.0
0.4
2.4
°C/W
ψJB
Junction-to-board characterization
parameter
48.5
13.9
15.4
15.3
51.7
17.3
15.1
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal
resistance
—
3.9
4.5
4.4
—
6.1
4.6
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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SNVS859C – JULY 2012 – REVISED SEPTEMBER 2016
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7.5 Electrical Characteristics
Typical values apply for TJ = 25°C only. Minimum and maximum limits apply for TJ= –40°C to 125°C. (1) Unless otherwise
specified, VDD = VHB = 12 V, VSS = VHS = 0 V, No Load on LO or HO.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
0.25
0.4
mA
2.0
3
mA
0.06
0.2
mA
mA
SUPPLY CURRENTS
IDD
VDD quiescent current
VLI = VHI = 0 V
IDDO
VDD operating current
f = 500 kHz
IHB
Total HB quiescent current
VLI = VHI = 0 V
IHBO
Total HB operating current
f = 500 kHz
1.6
3
IHBS
HB to VSS current (quiescent)
VHS = VHB = 100 V
0.1
10
IHBSO
HB to VSS current (operating)
f = 500 kHz
0.4
µA
mA
INPUT PINS
VIL
Input voltage threshold
VIHYS
Input voltage hysteresis
RI
Input pulldown resistance
Rising Edge
1.3
1.8
2.3
50
V
mV
100
200
400
kΩ
6.0
6.9
7.4
V
UNDER VOLTAGE PROTECTION
VDDR
VDD rising threshold
VDDH
VDD threshold hysteresis
VHBR
HB rising threshold
VHBH
HB threshold hysteresis
0.5
5.7
6.6
V
7.1
0.4
V
V
BOOT STRAP DIODE
VDL
Low-current forward voltage
IVDD-HB = 100 µA
0.52
0.85
V
VDH
High-current forward voltage
IVDD-HB = 100 mA
0.8
1
V
RD
Dynamic resistance
IVDD-HB = 100 mA
1.0
1.65
Ω
A version
0.12
0.25
B version
0.16
0.4
C version
0.28
0.65
A version
0.24
0.45
B version
0.28
0.60
C version
0.60
1.10
A version
3
B version
2
C version
1
A version
3
B version
2
C version
1
LO AND HO GATE DRIVER
VOL
VOH
IOHL
IOLL
(1)
6
Low-level output voltage
High-level output voltage
Peak pullup current
Peak pulldown current
IHO = ILO = 100 mA
IHO = ILO = 100 mA
VOH = VDD – VLO or
VOH = VHB – VHO
HO, VLO = 0 V
HO, VLO = 12 V
V
V
A
A
Minimum and maximum limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through
correlation using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL).
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7.6 Switching Characteristics
Typical values apply for TJ = 25°C only. Minimum and maximum limits apply for TJ= –40°C to 125°C. (1) Unless otherwise
specified, VDD = VHB = 12 V, VSS = VHS = 0 V, No Load on LO or HO.
TYP
MAX
tLPHL
LO turnoff propagation delay
PARAMETER
LI falling to LO falling
22
56
ns
tLPLH
LO turnon propagation delay
LI rising to LO rising
26
56
ns
tHPHL
HO turnoff propagation delay
HI falling to HO falling
22
56
ns
tHPLH
LO turnon propagation delay
HI rising to HO rising
26
56
ns
tMON
Delay matching
LO ON and HO OFF
4
10
ns
tMOFF
Delay matching
LO OFF and HO ON
4
10
ns
tRC, tFC
Either output rise and fall time
CL = 1000 pF
8
tR
tF
TEST CONDITIONS
Output rise time (3 V to 9 V)
CL = 0.1 µF
Output fall time (3 V to 9 V)
CL = 0.1 µF
tPW
Minimum input pulse duration that changes
the output
tBS
Bootstrap diode reverse recovery time
(1)
MIN
A version
430
B version
570
C version
990
A version
260
B version
430
C version
715
IF = 100 mA, IR = 100 mA
UNIT
ns
ns
ns
50
ns
37
ns
Minimum and maximum limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through
correlation using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL).
LI
LI
HI
tHPLH
tLPLH
HI
tHPHL
tLPHL
LO
LO
HO
HO
tMON
tMOFF
Figure 1. Timing Diagram
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SNVS859C – JULY 2012 – REVISED SEPTEMBER 2016
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7.7 Typical Characteristics
5.0
5.0
4.5
4.5
4.0
4.0
3.5
LM25101A
3.0
CURRENT (A)
CURRENT (A)
3.5
2.5
LM25101B
2.0
LM25101A
3.0
2.5
LM25101B
2.0
1.5
1.5
1.0
1.0
LM25101C
0.5
LM25101C
0.5
0.0
0.0
7
8
9
10
11
12
13
14
7
15
8
9
10
11
12
VDD = 12V
VDD = 12V
3.0
3.0
2.5
2.5
LM25101A
CURRENT (A)
CURRENT (A)
15
3.5
3.5
2.0
LM25101B
1.5
1.0
LM25101A
2.0
LM25101B
1.5
1.0
LM25101C
0.5
LM25101C
0.5
0
2
4
6
8
10
0.0
12
2
0
OUTPUT VOLTAGE (V)
4
8
6
10
12
OUTPUT VOLTAGE (V)
Figure 5. Source Current vs Output Voltage
Figure 4. Sink Current vs Output Voltage
2.3
100000
2.1
VDD = 12V
CL = 4400 pF
IDDO
1.9
CURRENT (mA)
CURRENT (PA)
14
VDD (V)
Figure 3. Peak Sinking Current vs Supply Voltage
VDD (V)
Figure 2. Peak Sourcing Current vs Supply Voltage
0.0
13
10000
CL = 1000 pF
1000
1.7
IHBO
1.5
1.3
1.1
CL = 0 pF
100
0.1
1
10
100
FREQUENCY (kHz)
Figure 6. IDD vs Frequency
8
1000
0.9
0.7
-50
-25
0
25
50
75
100 125 150
o
TEMPERATURE ( C)
Figure 7. Operating Current vs Temperature
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Typical Characteristics (continued)
400
100000
HB = 12V,
HS = 0V
350
CL = 4400 pF
IDD
300
CURRENT (PA)
CURRENT (PA)
10000
CL = 1000 pF
1000
CL = 0 pF
100
250
200
150
100
IHB
50
10
0
0.1
1
10
100
1000
8
9
10
11
12
13
14
15
16
VDD, VHB (V)
FREQUENCY (kHz)
Figure 9. Quiescent Current vs Supply Voltage
Figure 8. IHB vs Frequency
350
7.30
7.20
300
7.10
IDD
THRESHOLD (V)
CURRENT (PA)
250
200
150
100
7.00
VDDR
6.90
6.80
6.70
6.60
VHBR
6.50
50
0
-50
6.40
IHB
-25
0
25
50
75
6.30
-50
100 125 150
0
25
50
75
100 125 150
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 10. Quiescent Current vs Temperature
Figure 11. Undervoltage Rising Thresholds
vs Temperature
1.00E-01
0.60
T = 150°C
0.55
1.00E-02
VDDH
0.50
1.00E-03
ID (A)
HYSTERESIS (V)
-25
0.45
T = 25°C
1.00E-04
VHBH
0.40
0.30
-50
T = -40°C
1.00E-05
0.35
-25
0
25
50
75
100 125 150
TEMPERATURE (oC)
Figure 12. Undervoltage Threshold Hysteresis
vs Temperature
1.00E-06
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
VD (V)
Figure 13. Bootstrap Diode Forward Voltage
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1.92
1.92
1.91
1.91
1.90
THRESHOLD VOLTAGE (V)
THRESHOLD VOLTAGE (V)
Typical Characteristics (continued)
Rising
1.89
1.88
1.87
1.86
Falling
1.85
1.84
1.83
1.82
1.90
1.88
1.87
1.86
1.85
1.83
1.82
1.81
1.80
-50 -25
1.80
25
50
75
Falling
1.84
1.81
0
Rising
1.89
8
100 125 150
9
10
11
12
13
14
15
16
VDD (V)
TEMPERATURE (°C)
Figure 15. Input Threshold vs Supply Voltage
Figure 14. Input Threshold vs Temperature
1.0
40
VDD = 12V
0.9
35
0.8
30
T_PLH
VOH (V)
DELAY (ns)
0.7
25
T_PHL
LM25101C
0.6
0.5
0.4
LM25101B
0.3
LM25101A
0.2
20
0.1
15
-50
-25
0
25
50
75
0.0
-50 -25
100 125 150
25
50
75 100 125 150
TEMPERATURE (°C)
Figure 17. LO and HO Gate Drive:
High Level Output Voltage vs Temperature
TEMPERATURE (°C)
Figure 16. Propagation Delay vs Temperature
0.50
0
0.8
VDD = 12V
IOUT = -100 mA
0.45
0.7
0.40
0.6
0.30
LM25101C
LM25101C
VOH (V)
VOL (V)
0.35
0.25
LM25101B
0.20
0.15
LM25101A
0.10
0.4
0.3
0
25
50
75
100 125 150
LM25101A
0.1
TEMPERATURE (°C)
Figure 18. LO and HO Gate Drive:
Low Level Output Voltage vs Temperature
10
LM25101B
0.2
0.05
0.00
-50 -25
0.5
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7
8
9
10
11
12
13
14
15
VDD (V)
Figure 19. LO and HO Gate Drive:
Output High Voltage vs Supply Voltage
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Typical Characteristics (continued)
0.35
IOUT = 100 mA
VOL (V)
0.30
LM25101C
0.25
0.20
LM25101B
0.15
LM25101A
0.10
7
8
9
10
11
12
13
14
15
VDD (V)
Figure 20. LO and HO Gate Drive:
Output Low Voltage vs Supply Voltage
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8 Detailed Description
8.1 Overview
To operate fast switching of power MOSFETs at high switching frequencies and to reduce associated switching
losses, a powerful gate driver is employed between the PWM output of controller and the gates of the power
semiconductor devices. Also, gate drivers are indispensable when it is impossible for the PWM controller to
directly drive the gates of the switching devices. With the advent of digital power, this situation is often
encountered because the PWM signal from the digital controller is often a 3.3 V logic signal which cannot
effectively turn on a power switch. Level shift circuitry is needed to boost the 3.3-V signal to the gate-drive
voltage (such as 12 V) in order to fully turn on the power device and minimize conduction losses. Traditional
buffer drive circuits based on NPN or PNP bipolar transistors in totem-pole arrangement prove inadequate with
digital power because they lack level-shifting capability. Gate drivers effectively combine both the level-shifting
and buffer-drive functions. Gate drivers also find other needs such as minimizing the effect of high-frequency
switching noise (by placing the high-current driver IC physically close to the power switch), driving gate-drive
transformers and controlling floating power-device gates, reducing power dissipation and thermal stress in
controllers by moving gate charge power losses from the controller into the driver.
8.2 Functional Block Diagram
HB
HO
UVLO
DRIVER
LEVEL
SHIFT
HS
HI
VDD
UVLO
LO
LI
DRIVER
VSS
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8.3 Feature Description
8.3.1 Start-Up and UVLO
Both top and bottom drivers include UVLO protection circuitry which monitors the supply voltage (VDD) and
bootstrap capacitor voltage (VHB-HS) independently. The UVLO circuit inhibits each output until sufficient supply
voltage is available to turn on the external MOSFETs, and the built-in UVLO hysteresis prevents chattering
during supply voltage variations. When the supply voltage is applied to the VDD pin of the LM25101, the top and
bottom gates are held low until VDD exceeds the UVLO threshold, typically about 6.9 V. Any UVLO condition on
the bootstrap capacitor (VHB-HS) will only disable the high-side output (HO).
12
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Table 2. VDD UVLO Feature Logic Operation
(1)
CONDITION (1)
HI
LI
HO
LO
VDD – VSS < VDDR during device start-up
H
L
L
L
VDD – VSS < VDDR during device start-up
L
H
L
L
VDD – VSS < VDDR during device start-up
H
H
L
L
VDD – VSS < VDDR during device start-up
L
L
L
L
VDD – VSS < VDDR – VDDH after device start-up
H
L
L
L
VDD – VSS < VDDR – VDDH after device start-up
L
H
L
L
VDD – VSS < VDDR – VDDH after device start-up
H
H
L
L
VDD – VSS < VDDR – VDDH after device start-up
L
L
L
L
LO
VHB-HS > VHBR
Table 3. VHB-HS UVLO Feature Logic Operation
(1)
CONDITION (1)
HI
LI
HO
VHB→HS < VHBR during device start-up
H
L
L
L
VHB–HS < VHBR during device start-up
L
H
L
H
VHB–HS < VHBR during device start-up
H
H
L
H
VHB–HS < VHBR during device start-up
L
L
L
L
VHB–HS < VHBR – VHBH after device start-up
H
L
L
L
VHB–HS < VHBR – VHBH after device start-up
L
H
L
H
VHB–HS < VHBR – VHBH after device start-up
H
H
L
H
VHB–HS < VHBR – VHBH after device start-up
L
L
L
L
VDD>VDDR
8.3.2 Level Shift
The level shift circuit is the interface from the high-side input to the high-side driver stage which is referenced to
the switch node (HS). The level shift allows control of the HO output which is referenced to the HS pin and
provides excellent delay matching with the low-side driver.
8.3.3 Output Stages
The output stages are the interface to the power MOSFETs in the power train. High slew rate, low resistance,
and high peak current capability of both outputs allow for efficient switching of the power MOSFETs. The lowside output stage is referenced to VSS and the high-side is referenced to HS.
8.4 Device Functional Modes
The device operates in normal mode and UVLO mode. See Start-Up and UVLO for more information on UVLO
operation mode. In normal mode when the VDD and VHB–HS are above UVLO threshold, the output stage is
dependent on the states of the HI and LI pins. Unused inputs should be tied to ground and not left open.
Table 4. INPUT and OUTPUT Logic Table
(1)
(2)
HI
LI
HO (1)
LO (2)
L
L
L
L
H
L
H
L
H
L
H
L
H
H
H
H
HO is measured with respect to the HS pin.
LO is measured with respect to the VSS pin.
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The LM25101 is a high voltage gate driver designed to drive both the high-side and low-side N-Channel
MOSFETs in a half or full bridge configuration or in a synchronous buck circuit. The floating high side driver is
capable of operating with supply voltages up to 100 V. This allows for N-Channel MOSFETs control in halfbridge, full-bridge, push-pull, two switch forward, and active clamp topologies. The outputs are independently
controlled. Each channel is controlled by its respective input pins (HI and LI), allowing full and independent
flexibility to control the state (ON and OFF) of the output.
9.2 Typical Application
Optional external
fast recovery diode
VIN
Anti-Parallel Diode
(Optional)
VCC
RBOOT
DBOOT
HB
RGATE
HO
VDD
VDD
CBOOT
0.1µF
PWM
Controller
HI
OUT1
HS
T1
LM25101
RGATE
LI
OUT2
LO
1.0µF
VSS
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Figure 21. Application Diagram
9.2.1 Design Requirements
For this design example, use the parameters listed in Table 5 as the input parameters.
Table 5. Design Parameters
PARAMETER
14
EXAMPLE VALUE
Gate driver
LM25101 (C version)
MOSFET
CSD19534KCS
VDD
10 V
QG
17 nC
fSW
500 kHz
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9.2.2 Detailed Design Procedure
9.2.2.1 Selecting External Gate Driver Resistor
External gate driver resistor (RGATE) is sized to reduce ringing caused by parasitic inductances and capacitances
and also to limit the current coming out of the gate driver.
Peak HO pullup current is calculated using Equation 1.
IOHH
RHOH
VDD VDH
RGate RGFET _ Int
10V 1.0V
| 0.5A
1.1V / 100mA 4.7: 2.2:
where
•
•
•
•
•
IOHHis the peak pullup current
VDHis the bootstrap diode forward voltage drop
RHOHis the gate driver internal HO pullup resistance (1)
RGateis the external gate drive resistance
R(GFET_Int) is the MOSFET internal gate resistance, provided by the transistor data sheet
(1)
Similarly, Peak HO pulldown current is calculated using Equation 2.
VDD VDH
IOLH
RHOL RGate RGFET_Int
where
•
RHOL is the HO pulldown resistance
(2)
Peak LO pullup current is calculated using Equation 3.
VDD
IOHL
RLOH RGate RGFET_Int
where
•
RLOH is the LO pullup resistance
(3)
Peak LO pulldown current is calculated using Equation 4.
VDD
IOLL
RLOL RGate RFET_Int
where
•
RLOL is the LO pulldown resistance
(4)
If the application requires fast turnoff, an anti-paralleled diode on RGate may be used to bypass the external gate
drive resistor and speed up the turnoff transition.
(1)
This value is either provided directly by the data sheet or is estimated from the testing conditions using RHOH = VOHH / IHO.
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9.2.3 Application Curves
Figure 22 and Figure 23 show the rising and falling time and turnon and turnoff propagation delay testing
waveform at room temperature. Each channel (HI, LI, HO, LO) is labeled and displayed on the left hand of the
waveform.
The HI and LI pins are shorted together for these test waveforms. Therefore, the propagation delay matching
between the channels can be measured and inspected.
CL = 1 nF
VDD = 12 V
fSW = 500 kHz
Figure 22. Rising Time and Turnon Propagation Delay
CL = 1 nF
VDD = 12 V
fSW = 500 kHz
Figure 23. Falling Time and Turnoff Propagation Delay
10 Power Supply Recommendations
The total IC power dissipation is the sum of the gate driver losses and the bootstrap diode losses. The gate
driver losses are related to the switching frequency (f), output load capacitance on LO and HO (CL), and supply
voltage (VDD), which can be roughly calculated using Equation 5.
PDGATES = 2 × f × CL × VDD2
(5)
There are some additional losses in the gate drivers due to the internal CMOS stages used to buffer the LO and
HO outputs. Figure 24 shows the measured gate driver power dissipation versus frequency and load
capacitance. At higher frequencies and load capacitance values, the power dissipation is dominated by the
power losses driving the output loads and agrees well with Equation 5. Figure 24 can be used to approximate the
power losses due to the gate drivers.
The bootstrap diode power loss is the sum of the forward bias power loss that occurs while charging the
bootstrap capacitor and the reverse bias power loss that occurs during reverse recovery. Since each of these
events happens once per cycle, the diode power loss is proportional to frequency. Larger capacitive loads
require more energy to recharge the bootstrap capacitor resulting in more losses. Higher input voltages (VIN) to
the half bridge result in higher reverse recovery losses. Figure 25 was generated based on calculations and lab
measurements of the diode recovery time and current under several operating conditions and can be used to
approximate the diode power dissipation.
The total IC power dissipation can be estimated from these plots by summing the gate drive losses with the
bootstrap diode losses for the intended application.
16
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1.000
0.100
CL = 4400 pF
CL = 4400 pF
POWER (W)
POWER (W)
0.100
CL = 1000 pF
0.010
CL = 0 pF
0.010
CL = 0 pF
0.001
0.1
1.0
10.0
100.0
1000.0
0.001
SWITCHING FREQUENCY (kHz)
VDD = 12 V
Neglecting Diode Losses
Figure 24. Gate Driver Power Dissipation (LO + HO)
1
10
100
1000
SWITCHING FREQUENCY (kHz)
VIN = 50 V
Figure 25. Diode Power Dissipation
11 Layout
11.1 Layout Guidelines
The optimum performance of high and low-side gate drivers cannot be achieved without following certain
guidelines during circuit-board layout.
• Low ESR and ESL capacitors must be connected close to the IC, between the VDD and VSS pins and
between the HB and HS pins to support the high peak currents being drawn from VDD during start-up of the
external MOSFET.
• To prevent large voltage transients at the drain of the top MOSFET, a low ESR electrolytic capacitor must be
connected between the MOSFET drain and ground (VSS).
• To avoid large negative transients on the switch node (HS pin), the parasitic inductances must be minimized
in the source of the top MOSFET and in the drain of the bottom MOSFET (synchronous rectifier).
• Grounding Considerations:
– The first priority in designing grounding connections is to confine to a minimal physical area the high peak
currents that charge and discharge the MOSFET gate. This decreases the loop inductance and minimizes
noise issues on the gate terminal of the MOSFET. The MOSFETs should be placed as close as possible
to the gate driver.
–
The second high current path includes the bootstrap capacitor, the bootstrap diode, the local ground
referenced bypass capacitor, and low-side MOSFET body diode. The bootstrap capacitor is recharged on
a cycle-by-cycle basis through the bootstrap diode from the ground referenced VDD bypass capacitor. The
recharging occurs in a short time interval and involves high peak current. Minimizing this loop length and
area on the circuit board is important to ensure reliable operation.
Figure 26 shows a recommended layout pattern for the driver. If possible a single layer placement is preferred.
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11.2 Layout Example
Recommended Layout for Driver IC and
Passives
VDD
LO
VSS
HB
SO
PowerPAD
LI
HS
HI
LO
D
N
To Hi-Side FET
Multi Layer
Option
G
HO
HS
HO
Single Layer
Option
HO
To Low-Side FET
Figure 26. Recommended Layout Pattern
18
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12 Device and Documentation Support
12.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.3 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
LM25101AM/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
L25101
AM
LM25101AMR/NOPB
ACTIVE SO PowerPAD
DDA
8
95
RoHS & Green
SN
Level-3-260C-168 HR
-40 to 125
L25101
AMR
LM25101AMRX/NOPB
ACTIVE SO PowerPAD
DDA
8
2500
RoHS & Green
SN
Level-3-260C-168 HR
-40 to 125
L25101
AMR
LM25101AMX/NOPB
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
L25101
AM
LM25101ASD-1/NOPB
ACTIVE
WSON
NGT
8
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
25101A1
LM25101ASD/NOPB
ACTIVE
WSON
DPR
10
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
25101A
LM25101ASDX-1/NOPB
ACTIVE
WSON
NGT
8
4500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
25101A1
LM25101ASDX/NOPB
ACTIVE
WSON
DPR
10
4500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
25101A
LM25101BMA/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
L25101
BMA
LM25101BMAX/NOPB
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
L25101
BMA
LM25101BSD/NOPB
ACTIVE
WSON
DPR
10
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
25101B
LM25101BSDX/NOPB
ACTIVE
WSON
DPR
10
4500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
25101B
LM25101CMA/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
L25101
CMA
LM25101CMAX/NOPB
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
L25101
CMA
LM25101CMY/NOPB
ACTIVE
HVSSOP
DGN
8
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
CMYN
LM25101CMYE/NOPB
ACTIVE
HVSSOP
DGN
8
250
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
CMYN
LM25101CMYX/NOPB
ACTIVE
HVSSOP
DGN
8
3500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
CMYN
LM25101CSD/NOPB
ACTIVE
WSON
DPR
10
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
25101C
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
10-Dec-2020
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
RoHS & Green
SN
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
LM25101CSDX/NOPB
ACTIVE
WSON
DPR
10
4500
Level-1-260C-UNLIM
-40 to 125
25101C
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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