LM2767M5/NOPB

LM2767 SNVS069E – FEBRUARY 2000 – REVISED JANUARY 2022 LM2767 Switched Capacitor Voltage Converter 1 Features 3 Description • • • • The LM2767 CMOS charge-pump voltage converter operates as a voltage doubler for an input voltage in the range of 1.8 V to 5.5 V. Two low-cost capacitors and a diode are used in this circuit to provide at least 15 mA of output current. Doubles input supply voltage SOT-23 5-pin package 20-Ω typical output impedance 96% typical conversion efficiency at 15 mA 2 Applications • • • • • • Cellular phones Pagers PDAs, organizers Operational amplifier power suppliers Interface power suppliers Handheld instruments The LM2767 operates at 11-kHz switching frequency to avoid audio voice-band interference. With an operating current of only 40 µA (operating efficiency greater than 90% with most loads), the LM2767 provides ideal performance for battery-powered systems. The device is manufactured in a 5-pin SOT-23 package. Device Information PART NUMBER LM2767 (1) PACKAGE(1) SOT-23 (5) BODY SIZE (NOM) 2.90 mm × 1.60 mm For all available packages, see the orderable addendum at the end of the data sheet. Typical Application An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. LM2767 www.ti.com SNVS069E – FEBRUARY 2000 – REVISED JANUARY 2022 Table of Contents 1 Features............................................................................1 2 Applications..................................................................... 1 3 Description.......................................................................1 4 Revision History.............................................................. 2 5 Pin Configuration and Functions...................................3 6 Specifications.................................................................. 4 6.1 Absolute Maximum Ratings........................................ 4 6.2 ESD Ratings............................................................... 4 6.3 Recommended Operating Conditions.........................4 6.4 Thermal Information....................................................4 6.5 Electrical Characteristics.............................................5 6.6 Typical Characteristics................................................ 6 7 Parameter Measurement Information............................ 8 7.1 Test Circuit.................................................................. 8 8 Detailed Description........................................................9 8.1 Overview..................................................................... 9 8.2 Functional Block Diagram........................................... 9 8.3 Feature Description.....................................................9 8.4 Device Functional Modes............................................9 9 Application and Implementation.................................. 10 9.1 Application Information............................................. 10 9.2 Typical Application.................................................... 10 10 Power Supply Recommendations..............................14 11 Layout........................................................................... 15 11.1 Layout Guidelines................................................... 15 11.2 Layout Example...................................................... 15 12 Device and Documentation Support..........................16 12.1 Device Support....................................................... 16 12.2 Receiving Notification of Documentation Updates..16 12.3 Support Resources................................................. 16 12.4 Trademarks............................................................. 16 12.5 Electrostatic Discharge Caution..............................16 12.6 Glossary..................................................................16 13 Mechanical, Packaging, and Orderable Information.................................................................... 16 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision D (August 2015) to Revision E (January 2022) Page • Updated the numbering format for tables, figures, and cross-references throughout the document. ................1 • Added additional IL specification test condition ..................................................................................................5 Changes from Revision C (May 2013) to Revision D (August 2015) Page • Added Device Information and Pin Configuration and Functions sections, ESD Rating table, Feature Description, Device Functional Modes, Application and Implementation, Power Supply Recommendations, Layout, Device and Documentation Support, and Mechanical, Packaging, and Orderable Information sections ............................................................................................................................................................................1 2 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM2767 LM2767 www.ti.com SNVS069E – FEBRUARY 2000 – REVISED JANUARY 2022 5 Pin Configuration and Functions 1 5 2 3 4 Figure 5-1. DBV Package 5-Pin SOT-23 Top View Table 5-1. Pin Functions PIN TYPE DESCRIPTION NUMBER NAME 1 VOUT Power Positive voltage output. 2 GND Ground Power supply ground input. 3 CAP− Power Connect this pin to the negative terminal of the charge-pump capacitor. 4 V+ Power Power supply positive voltage input. 5 CAP+ Power Connect this pin to the positive terminal of the charge-pump capacitor. Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM2767 3 LM2767 www.ti.com SNVS069E – FEBRUARY 2000 – REVISED JANUARY 2022 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)(1) (2) MAX UNIT Supply voltage (V+ to GND, or V+ to VOUT) MIN 5.8 V VOUT continuous output current 30 mA Output short-circuit duration to GND(3) 1 sec Continuous power dissipation (TA = 25°C)(4) 400 mW TJMax (4) 150 °C 150 °C Storage temperature, Tstg (1) (2) (3) (4) −65 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. If Military/Aerospace specified devices are required, contact the TI Sales Office/ Distributors for availability and specifications. VOUT may be shorted to GND for one second without damage. For temperatures above 85°C, VOUT must not be shorted to GND or device may be damaged. The maximum allowable power dissipation is calculated by using PDMax = (TJMax − TA)/RθJA, where TJMax is the maximum junction temperature, TA is the ambient temperature, and RθJA is the junction-to-ambient thermal resistance of the specified package. 6.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 Machine model (CDM), per JEDEC specification JESD22-C101(2) UNIT V ±200 JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN Junction temperature −40 Ambient temperature −40 NOM MAX UNIT 100 °C 85 °C 240 °C Lead temperature (soldering, 10 sec.) 6.4 Thermal Information LM2767 THERMAL METRIC(1) DBV (SOT-23) UNIT 5 PINS RθJA (1) 4 Junction-to-ambient thermal resistance 210 °C/W For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM2767 LM2767 www.ti.com SNVS069E – FEBRUARY 2000 – REVISED JANUARY 2022 6.5 Electrical Characteristics Unless otherwise specified, typical limits are for TJ = 25°C, minimum and maximum limits apply over the full operating temperature range: V+ = 5 V, C1 = C2 = 10 μF.(1) PARAMETER TEST CONDITIONS MIN V+ Supply voltage IQ Supply current No load IL Output current 2.5 V ≤ V+ ≤ 5.5 V 15 1.8 V ≤ V+ < 2.5 V 10 ROUT Output resistance(2) IL = 15 mA ƒOSC Oscillator frequency See(3) ƒSW Switching frequency See(3) PEFF Power efficiency VOEFF Voltage conversion efficiency (1) (2) (3) TYP 1.8 5.5 40 90 UNIT V µA mA mA 20 40 Ω 8 22 50 kHz 4 11 25 kHz RL (5 kΩ) between GND and OUT 98% IL = 15 mA to GND 96% No load MAX 99.96% In the test circuit, capacitors C1 and C2 are 10-µF, 0.3-Ω maximum ESR capacitors. Capacitors with higher ESR may increase output resistance, and reduce output voltage and efficiency. Specified output resistance includes internal switch resistance and capacitor ESR. See the details in Section 9 for positive voltage doubler. The output switches operate at one half of the oscillator frequency, ƒOSC = 2 × ƒSW. Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM2767 5 LM2767 www.ti.com SNVS069E – FEBRUARY 2000 – REVISED JANUARY 2022 6.6 Typical Characteristics (Circuit of Figure 7-1, VIN = 5 V, TA = 25°C unless otherwise specified). 6 Figure 6-1. Supply Current vs Supply Voltage Figure 6-2. Output Resistance vs Capacitance Figure 6-3. Output Resistance vs Supply Voltage Figure 6-4. Output Resistance vs Temperature Figure 6-5. Output Voltage vs Load Current Figure 6-6. Switching Frequency vs Supply Voltage Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM2767 LM2767 www.ti.com SNVS069E – FEBRUARY 2000 – REVISED JANUARY 2022 Figure 6-7. Switching Frequency vs Temperature Figure 6-8. Output Ripple vs Load Current Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM2767 7 LM2767 www.ti.com SNVS069E – FEBRUARY 2000 – REVISED JANUARY 2022 7 Parameter Measurement Information 7.1 Test Circuit Figure 7-1. LM2767 Test Circuit 8 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM2767 LM2767 www.ti.com SNVS069E – FEBRUARY 2000 – REVISED JANUARY 2022 8 Detailed Description 8.1 Overview The LM2767 CMOS charge-pump voltage converter operates as a voltage doubler for an input voltage in the range of 1.8 V to 5.5 V. Two low-cost capacitors and a diode (needed during start-up) are used in this circuit. 8.2 Functional Block Diagram LM2767 V+ OUT Oscillator Switch Array Switch Drivers CAP+ CAPGND 8.3 Feature Description The LM2767 contains four large CMOS switches which are switched in a sequence to double the input supply voltage. Energy transfer and storage are provided by external capacitors. Figure 9-2 illustrates the voltage conversion scheme. When S2 and S4 are closed, C1 charges to the supply voltage V+. During this time interval, switches S1 and S3 are open. In the next time interval, S2 and S4 are open; at the same time, S1 and S3 are closed, the sum of the input voltage V+ and the voltage across C1 gives the 2V+ output voltage when there is no load. The output voltage drop when a load is added is determined by the parasitic resistance (Rds(on) of the MOSFET switches and the ESR of the capacitors) and the charge transfer loss between capacitors. Details are discussed in Section 9. 8.4 Device Functional Modes The LM2767 is always enabled when power is applied to the V+ pin (1.8 V ≤ VIN ≤ 5.5 V). To disable the part, power must be removed. Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM2767 9 LM2767 www.ti.com SNVS069E – FEBRUARY 2000 – REVISED JANUARY 2022 9 Application and Implementation Note Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes, as well as validating and testing their design implementation to confirm system functionality. 9.1 Application Information The LM2767 provides a simple and efficient means of creating an output voltage level equal to twice that of the input voltage. Without the need of an inductor, the application solution size can be reduced versus the magnetic DC-DC converter solution. 9.2 Typical Application The main application of the LM2767 is to double the input voltage. The range of the input supply voltage is 1.8 V to 5.5 V. Figure 9-1. LM2767 Typical Application 9.2.1 Design Requirements For typical switched-capacitor voltage converter applications, use the parameters listed in Table 9-1. Table 9-1. Design Parameters DESIGN PARAMETER EXAMPLE VALUE Minimum input voltage 1.8 to 5.5 V Output current (minimum) 15 mA Switching frequency 11 kHz (typical) 9.2.2 Detailed Design Procedure 9.2.2.1 Positive Voltage Doubler Figure 9-2. Voltage Doubling Principle 10 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM2767 LM2767 www.ti.com SNVS069E – FEBRUARY 2000 – REVISED JANUARY 2022 The output characteristics of this circuit can be approximated by an ideal voltage source in series with a resistance. The voltage source equals 2 V+. The output resistance Rout is a function of the ON resistance of the internal MOSFET switches, the oscillator frequency, and the capacitance and ESR of C1 and C2. Because the switching current charging and discharging C1 is approximately twice the output current, the effect of the ESR of the pumping capacitor C1 is multiplied by four in the output resistance. The output capacitor C2 is charging and discharging at a current approximately equal to the output current, therefore, its ESR only counts once in the output resistance. A good approximation of Rout is: R OUT 2R SW + 2 + 4ESR C1 + ESRC2 &OSC × C1 (1) where • RSW is the sum of the ON resistance of the internal MOSFET switches shown in Figure 9-2. The peak-to-peak output voltage ripple is determined by the oscillator frequency as well as the capacitance and ESR of the output capacitor C2: VRIPPLE = IL + 2 × IL × ESRC2 &OSC × C2 (2) High capacitance, low ESR capacitors can reduce both the output resistance and the voltage ripple. The Schottky diode D1 is only needed to protect the device from turning on its own parasitic diode and potentially latching up. During start-up, D1 also quickly charges up the output capacitor to VIN minus the diode drop thereby decreasing the start-up time. Therefore, the Schottky diode D1 must have enough current carrying capability to charge the output capacitor at start-up, as well as a low forward voltage to prevent the internal parasitic diode from turning on. A Schottky diode like 1N5817 can be used for most applications. If the input voltage ramp is less than 10 V/ms, a smaller Schottky diode like MBR0520LT1 can be used to reduce the circuit size. 9.2.2.2 Capacitor Selection As discussed in Section 9.2.2.1, the output resistance and ripple voltage are dependent on the capacitance and ESR values of the external capacitors. The output voltage drop is the load current times the output resistance, and the power efficiency is D= POUT IL 2 RL = 2 PIN IL RL + IL 2 ROUT + IQ (V+) (3) where • • IQ(V+) is the quiescent power loss of the device; and IL 2Rout is the conversion loss associated with the switch on-resistance, the two external capacitors and their ESRs. The selection of capacitors is based on the allowable voltage droop (which equals Iout Rout), and the desired output voltage ripple. Low-ESR capacitors (Table 9-2) are recommended to maximize efficiency, reduce the output voltage drop and voltage ripple. Table 9-2. Low-ESR Capacitor Manufacturers MANUFACTURER PHONE WEBSITE (847)-843-7500 www.nichicon.com PL & PF series, through-hole aluminum electrolytic AVX Corp. (843)-448-9411 www.avxcorp.com TPS series, surface-mount tantalum Sprague (207)-324-4140 www.vishay.com 593D, 594D, 595D series, surface-mount tantalum Sanyo (619)-661-6835 www.sanyovideo.com OS-CON series, through-hole aluminum electrolytic Murata (800)-831-9172 www.murata.com Ceramic chip capacitors Taiyo Yuden (800)-348-2496 www.t-yuden.com Ceramic chip capacitors Nichicon Corp. CAPACITOR TYPE Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM2767 11 LM2767 www.ti.com SNVS069E – FEBRUARY 2000 – REVISED JANUARY 2022 Table 9-2. Low-ESR Capacitor Manufacturers (continued) MANUFACTURER Tokin PHONE WEBSITE (408)-432-8020 www.tokin.com CAPACITOR TYPE Ceramic chip capacitors 9.2.2.3 Paralleling Devices Any number of LM2767 devices can be paralleled to reduce the output resistance. Because there is no closed loop feedback, as found in regulated circuits, stable operation is assured. Each device must have its own pumping capacitor C1, while only one output capacitor COUT is needed as shown in Figure 9-3. The composite output resistance is: R OUT = R OUT of each LM 2767 (4) Number of Devices Figure 9-3. Lowering Output Resistance by Paralleling Devices 9.2.2.4 Cascading Devices Cascading the several LM2767 devices is an easy way to produce a greater voltage (a two-stage cascade circuit is shown in Figure 9-4). The effective output resistance is equal to the weighted sum of each individual device: ROUT = 1.5 ROUT_1 + ROUT_2 (5) Note that increasing the number of cascading stages is practically limited because it significantly reduces the efficiency, increases the output resistance and output voltage ripple. Figure 9-4. Increasing Output Voltage By Cascading Devices 9.2.2.5 Regulating VOUT It is possible to regulate the output of the LM2767 by use of a low dropout regulator (such as LP2980-5.0). The whole converter is depicted in Figure 9-5. A different output voltage is possible by use of LP2980-3.3, LP2980-3.0, or LP2980-ADJ. The following conditions must be satisfied simultaneously for worst case design: 12 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM2767 LM2767 www.ti.com SNVS069E – FEBRUARY 2000 – REVISED JANUARY 2022 2VIN_MIN > VOUT_MIN + VDROP_MAX (LP2980) + IOUT_MAX × ROUT_MAX (6) 2VIN_MAX < VOUT_MAX + VDROP_MIN (LP2980) + IOUT_MIN × ROUT_MIN (7) Figure 9-5. Generate a Regulated 5-V From 3-V Input Voltage 9.2.3 Application Curve Figure 9-6. Efficiency vs Load Current Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM2767 13 LM2767 www.ti.com SNVS069E – FEBRUARY 2000 – REVISED JANUARY 2022 10 Power Supply Recommendations The LM2767 is designed to operate from as an inverter over an input voltage supply range from 1.8 V and 5.5 V. This input supply must be well-regulated and capable to supply the required input current. If the input supply is located far from the device, additional bulk capacitance may be required in addition to the ceramic bypass capacitors. 14 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM2767 LM2767 www.ti.com SNVS069E – FEBRUARY 2000 – REVISED JANUARY 2022 11 Layout 11.1 Layout Guidelines Use the following steps as a reference to ensure the device is stable across its intended operating voltage and current range. • Place CIN on the top layer (same layer as the LM2767) and as close to the device as possible. Connecting the input capacitor through short, wide traces to both the V+ and GND pins reduces the inductive voltage spikes that occur during switching which can corrupt the V+ line. • Place COUT on the top layer (same layer as the LM2767) and as close as possible to the OUT and GND pin. The returns for both CIN and COUT must come together at one point, as close to the GND pin as possible. Connecting COUT through short, wide traces reduce the series inductance on the OUT and GND pins that can corrupt the VOUT and GND lines and cause excessive noise in the device and surrounding circuitry. • Place C1 on the top layer (same layer as the LM2767 device) and as close to the device as possible. Connect the flying capacitor through short, wide traces to both the CAP+ and CAP– pins. 11.2 Layout Example LM2767 VOUT CAP+ GND CAP- V+ Figure 11-1. LM2767 Layout Example Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM2767 15 LM2767 www.ti.com SNVS069E – FEBRUARY 2000 – REVISED JANUARY 2022 12 Device and Documentation Support 12.1 Device Support 12.1.1 Third-Party Products Disclaimer TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE. 12.2 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on Subscribe to updates to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 12.3 Support Resources TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight from the experts. Search existing answers or ask your own question to get the quick design help you need. Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. 12.4 Trademarks TI E2E™ is a trademark of Texas Instruments. All trademarks are the property of their respective owners. 12.5 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 12.6 Glossary TI Glossary This glossary lists and explains terms, acronyms, and definitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 16 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: LM2767 PACKAGE OPTION ADDENDUM www.ti.com 20-Jan-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) LM2767M5 NRND SOT-23 DBV 5 1000 Non-RoHS & Green Call TI Level-1-260C-UNLIM -40 to 85 S17B LM2767M5/NOPB ACTIVE SOT-23 DBV 5 1000 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 S17B LM2767M5X/NOPB ACTIVE SOT-23 DBV 5 3000 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 S17B (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of