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LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
ZHCSIT6W – JUNE 1976 – REVISED OCTOBER 2019
行业标准双路运算放大器
1 特性
•
•
•
•
•
1
•
•
3 说明
3V 至 36V 宽电源范围（B 版本）
静态电流：每个放大器 300µA（B 版本，典型值）
单位增益带宽为 1.2MHz（B 版本）
共模输入电压范围包括接地，支持近地直接检测
3mV（25°C 时）的低输入失调电压（A 和 B 版
本，最大值）
内部射频和 EMI 滤波器（B 版本）
对于符合 MIL-PRF-38535 标准的产品，所有参数
均经过测试，除非另外注明。对于所有其他产品，
生产流程不一定包含对所有参数的测试。
2 应用
•
•
•
•
•
•
•
•
•
•
•
商用网络和服务器电源单元
多功能打印机
电源和移动充电器
电机控制：交流感应、刷式直流、无刷直流、高电
压、低电压、永久磁性和步进电机
台式计算机和主板
室内外空调
洗衣机、烘干机和冰箱
交流逆变器、串式逆变器、中央逆变器和变频器
不间断电源
可编程逻辑控制器
电子销售点系统
单极低通滤波器
RG
RF
R1
VOUT
VIN
C1
f-3 dB =
(
RF
VOUT
= 1+
RG
VIN
((
1
1 + sR1C1
LM358B 和 LM2904B 是业界通用运算放大器 LM358
和 LM2904 的下一代版本，其中包括两个高压 (36V)
运算放大器。这些器件为成本敏感型 应用带来了出色
的价值，该器件的 特性 包括低失调电压（300µV，典
型值）、接地共模输入范围以及高差分输入电压能力。
LM358B 和 LM2904B 运算放大器具有增强的 功能，
例如单位增益稳定性、较低的 3mV（室温下的最大
值）失调电压和每个放大器 300µA（典型值）的静态
电流，从而简化了电路设计。高 ESD（2kV，HBM）
和集成 EMI 以及射频滤波器可支持将 LM358B 和
LM2904B 器件用于最严苛、最具环境挑战性的 应用。
LM358B 和 LM2904B 放大器采用行业通用封装（包括
SOIC、TSSOP 和 VSSOP）。
器件信息(1)
器件型号
封装
封装尺寸（标称值）
LM358B、LM2904B、
LM358、LM358A、
LM2904、LM2904V、
LM258、LM258A
SOIC (8)
4.90mm × 3.90mm
LM358B(2)、LM2904B(2)、
LM358、LM358A、
LM2904、LM2490V
TSSOP (8)
3.00mm × 4.40mm
LM358B(2)、LM2904B(2)、
LM358、LM358A、
LM2904、LM2904V、
LM258、LM258A
VSSOP (8)
3.00mm × 3.00mm
LM358、LM2904
SO (8)
5.20mm × 5.30mm
LM358、LM2904、
LM358A、LM258、
LM258A
PDIP (8)
9.81mm × 6.35mm
LM158、LM158A
CDIP (8)
9.60mm × 6.67mm
LM158、LM158A
LCCC (20)
8.89mm × 8.89mm
(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附
录。
(2) 封装仅供预览。
1
2pR1C1
(
1
本文档旨在为方便起见，提供有关 TI 产品中文版本的信息，以确认产品的概要。 有关适用的官方英文版本的最新信息，请访问 www.ti.com，其内容始终优先。 TI 不保证翻译的准确
性和有效性。 在实际设计之前，请务必参考最新版本的英文版本。
English Data Sheet: SLOS068
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
ZHCSIT6W – JUNE 1976 – REVISED OCTOBER 2019
www.ti.com.cn
目录
1
2
3
4
5
6
7
特性 ..........................................................................
应用 ..........................................................................
说明 ..........................................................................
修订历史记录 ...........................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
7.10
7.11
7.12
8
9
1
1
1
2
4
5
6
Absolute Maximum Ratings ...................................... 6
ESD Ratings.............................................................. 6
Recommended Operating Conditions....................... 7
Thermal Information .................................................. 7
Electrical Characteristics: LM358B and LM358BA ... 8
Electrical Characteristics: LM2904B and LM2904B.. 9
Electrical Characteristics: LM358, LM358A ............ 10
Electrical Characteristics: LM2904, LM2904V ........ 11
Electrical Characteristics: LM158, LM158A ............ 12
Electrical Characteristics: LM258, LM258A .......... 13
Typical Characteristics .......................................... 14
Typical Characteristics .......................................... 21
Parameter Measurement Information ................ 23
Detailed Description ............................................ 24
9.1 Overview .................................................................
9.2 Functional Block Diagram - LM358B, LM358BA,
LM2904B, LM2904BA ..............................................
9.3 Feature Description.................................................
9.4 Device Functional Modes........................................
24
24
25
25
10 Application and Implementation........................ 26
10.1 Application Information.......................................... 26
10.2 Typical Application ............................................... 26
11 Power Supply Recommendations ..................... 27
12 Layout................................................................... 27
12.1 Layout Guidelines ................................................. 27
12.2 Layout Examples................................................... 28
13 器件和文档支持 ..................................................... 29
13.1
13.2
13.3
13.4
13.5
13.6
13.7
文档支持................................................................
相关链接................................................................
接收文档更新通知 .................................................
社区资源................................................................
商标 .......................................................................
静电放电警告.........................................................
术语表 ...................................................................
29
29
29
29
29
29
29
14 机械、封装和可订购信息 ....................................... 30
4 修订历史记录
注：之前版本的页码可能与当前版本有所不同。
Changes from Revision V (September 2018) to Revision W
Page
•
Added specification in the Device Comparison Table ............................................................................................................ 4
•
Changed CDM ESD rating for LM358B and LM2904B in ESD Ratings ................................................................................ 6
•
Changed VS to V+ in Recommended Operating Conditions .................................................................................................. 7
•
Changed Thermal Information for the LM158FK and LM158JG devices............................................................................... 7
•
已添加 Typical Characteristics section for the LM358B and LM2490B op amps................................................................. 14
•
已添加 test circuit for THD+N and small-signal step response, G = –1 in the Parameter Measurement Information
section .................................................................................................................................................................................. 23
•
已更改 the Functional Block Diagram................................................................................................................................... 24
•
已删除 在相关链接 部分中删除了 LM358B 和 LM2904B 的预览标识符 ............................................................................... 29
Changes from Revision U (January 2017) to Revision V
Page
•
更改了数据表标题 ................................................................................................................................................................... 1
•
更改了特性 部分的前四个项目 ................................................................................................................................................ 1
•
更改了 应用 部分中的第一项并添加了四个新项...................................................................................................................... 1
•
在说明 部分的第一段中更改了电压值 ..................................................................................................................................... 1
•
更改了说明 部分第二段中的文本 ............................................................................................................................................ 1
•
已添加 在数据表中添加了器件 LM358B 和 LM2904B ............................................................................................................ 1
•
更改了器件信息 表的前三行，并为预览状态器件添加了交叉引用的注释 ............................................................................... 1
•
Added Device Comparison table ........................................................................................................................................... 4
•
Added a table note to the Pin Functions table ...................................................................................................................... 5
•
Changed "free-air temperature" to "ambient temperature" in the Absolute Maximum Ratings condition statement ............. 6
•
Changed all entries in the Absolute Maximum Ratings table except TJ and Tstg .................................................................. 6
2
版权 © 1976–2019, Texas Instruments Incorporated
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
www.ti.com.cn
ZHCSIT6W – JUNE 1976 – REVISED OCTOBER 2019
•
Deleted lead temperature and case temperature from Absolute Maximum Ratings.............................................................. 6
•
Changed device listings and their voltage values in the ESD Ratings table ......................................................................... 6
•
Changed "free-air temperature" to "ambient temperature" in the Recommended Operating Conditions condition
statement ............................................................................................................................................................................... 7
•
Changed table entries for all parameters in the Recommended Operating Conditions table ................................................ 7
•
Added rows to the Thermal Information table, and a table note regarding device-package combinations .......................... 7
•
Deleted the Operating Conditions table................................................................................................................................ 13
•
Added a condition statement to the Typical Characteristics section .................................................................................... 21
•
Changed specific voltages to a Recommended Operating Conditions reference................................................................ 24
•
Changed unity-gain bandwidth from 0.7 MHz for all devices to 1.2 MHz for B-version devices.......................................... 25
•
Changed slew rate from.3 V/µs for all devices to o.5 V/µs for B-version devices................................................................ 25
•
Changed the Input Common Mode Range section in multiple places throughout ............................................................... 25
•
Changed VCC to VS in the Application Information section .................................................................................................. 26
•
Subscripted the suffixes fro RI and RF .................................................................................................................................. 26
•
已更改 Operational Amplifier Board Layout for Noninverting Configuration with an image that includes a dual op amp.... 28
•
在表 1 .................................................................................................................................................................................. 29
Changes from Revision T (April 2015) to Revision U
Page
•
已更改 数据表标题 .................................................................................................................................................................. 1
•
已添加 接收文档更新通知 部分和社区资源 部分................................................................................................................... 29
Changes from Revision S (January 2014) to Revision T
•
Page
已添加 应用 部分、ESD 额定值 表、特性 说明 部分、器件功能模式、应用和实现 部分、电源推荐 部分、布局 部
分、器件和文档支持 部分以及机械、封装和可订购信息 部分 ................................................................................................ 1
Changes from Revision R (July 2010) to Revision S
Page
•
使用 Web 上的 PDF 将此数据表从 QS 格式转换为 DocZone ................................................................................................ 1
•
删除了订单信息 表 .................................................................................................................................................................. 1
•
更新了特性 以包含“军用免责声明” .......................................................................................................................................... 1
•
已添加 Typical Characteristics section ................................................................................................................................. 21
•
添加了 ESD 警告 .................................................................................................................................................................. 29
Copyright © 1976–2019, Texas Instruments Incorporated
3
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
ZHCSIT6W – JUNE 1976 – REVISED OCTOBER 2019
www.ti.com.cn
5 Device Comparison Table
4
PART NUMBER
SUPPLY
VOLTAGE
TEMPERATURE
RANGE
VOS (MAXIMUM
AT 25°C)
IQ / CH (TYPICAL AT
25°C)
INTEGRATED EMI
FILTER
PACKAGE
LM358B
3 V–36 V
–40°C to 85°C
3 mV
300 µA
Yes
D, DGK, PW
LM2904B
3 V–36 V
–40°C to 125°C
3 mV
300 µA
Yes
D, DGK, PW
LM358
3 V–32 V
0°C to 70°C
7 mV
350 µA
No
D, PW, DGK, P, PS
LM2904
3 V–26 V
–40°C to 125°C
7 mV
350 µA
No
D, PW, DGK, P, PS
LM358A
3 V–32 V
0°C to 70°C
3 mV
350 µA
No
D, PW, DGK, P
LM2904V
3 V–32 V
–40°C to 125°C
7 mV
350 µA
No
D, PW
LM158
3 V–32 V
–55°C to 125°C
5 mV
350 µA
No
JG, FK
LM158A
3 V–32 V
–55°C to 125°C
3 mV
350 µA
No
JG, FK
LM258
3 V–32 V
–25°C to 85°C
5 mV
350 µA
No
D, DGK, P
LM258A
3 V–32 V
–25°C to 85°C
3 mV
350 µA
No
D, DGK, P
Copyright © 1976–2019, Texas Instruments Incorporated
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
www.ti.com.cn
ZHCSIT6W – JUNE 1976 – REVISED OCTOBER 2019
6 Pin Configuration and Functions
D, DGK, P, PS, PW, and JG Packages
8-Pin SOIC, VSSOP, PDIP, SO, TSSOP, and CDIP
Top View
6
IN2±
V±
4
5
IN2+
NC
3
19
IN1+
V+
OUT2
20
7
NC
2
1
IN1±
OUT1
V+
2
8
NC
1
3
OUT1
FK Package
20-Pin LCCC
Top View
NC
4
18
NC
IN1±
5
17
OUT2
NC
6
16
NC
IN1+
7
15
IN2±
NC
8
14
NC
13
NC
12
IN2+
11
NC
10
V±
NC
9
Not to scale
Not to scale
NC - No internal connection
Pin Functions
PIN
I/O
DESCRIPTION
LCCC (1)
SOIC, SSOP, CDIP, PDIP, SO,
TSSOP, CFP (1)
IN1–
5
2
I
Negative input
IN1+
7
3
I
Positive input
IN2–
15
6
I
Negative input
IN2+
12
5
I
Positive input
OUT1
2
1
O
Output
OUT2
17
7
O
Output
V–
10
4
—
Negative (lowest) supply or ground (for singlesupply operation)
NC
1, 3, 4, 6, 8, 9, 11,
13, 14, 16, 18, 19
—
—
No internal connection
V+
20
8
—
Positive (highest) supply
NAME
(1)
For a listing of which devices are available in what packages, see Device Comparison Table.
Copyright © 1976–2019, Texas Instruments Incorporated
5
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
ZHCSIT6W – JUNE 1976 – REVISED OCTOBER 2019
www.ti.com.cn
7 Specifications
7.1 Absolute Maximum Ratings
over operating ambient temperature range (unless otherwise noted) (1)
MIN
Supply voltage, VS = ([V+] – [V–])
Differential input voltage, VID (2)
Input voltage, VI
Either input
MAX
LM358B, LM358BA,
LM2904B, LM2904BA
±20 or 40
LM158, LM258, LM358,
LM158A, LM258A, LM358A,
LM2904V
±16 or 32
LM2904
±13 or 26
LM358B, LM358BA,
LM2904B, LM2904BA,LM158,
LM258, LM358, LM158A,
LM258A, LM358A, LM2904V
–32
32
LM2904
–26
26
LM358B, LM358BA,
LM2904B, LM2904BA
–0.3
40
LM158, LM258, LM358,
LM158A, LM258A, LM358A,
LM2904V
–0.3
32
LM2904
–0.3
26
Duration of output short circuit (one amplifier) to ground at (or below) TA = 25°C,
VS ≤ 15 V (3)
Operating ambient temperature, TA
Unlimited
LM158, LM158A
–55
125
LM258, LM258A
–25
85
LM358B, LM358BA
–40
85
0
70
–40
125
LM358, LM358A
LM2904B, LM2904BA,
LM2904, LM2904V
Operating virtual-junction temperature, TJ
Storage temperature, Tstg
(1)
(2)
(3)
–65
UNIT
V
V
V
s
°C
150
°C
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Differential voltages are at IN+, with respect to IN−.
Short circuits from outputs to VS can cause excessive heating and eventual destruction.
7.2 ESD Ratings
VALUE
UNIT
LM358B, LM358BA, LM2904B, AND LM2904BA
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±1000
V
LM158, LM258, LM358, LM158, LM258A, LM358A, LM2904, AND LM2904V
V(ESD)
(1)
(2)
6
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
Charged-device model (CDM), per JEDEC specification JESD22-C101
±500
(2)
±1000
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
Copyright © 1976–2019, Texas Instruments Incorporated
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
www.ti.com.cn
ZHCSIT6W – JUNE 1976 – REVISED OCTOBER 2019
7.3 Recommended Operating Conditions
over operating ambient temperature range (unless otherwise noted)
VS
Supply voltage, VS= ([V+] – [V–])
VCM
Common-mode voltage
MIN
MAX
LM358B, LM358BA, LM2904B,
LM2904BA
3
36
LM158, LM258, LM358, LM158A,
LM258A, LM358A, LM2904V
3
30
LM2904
TA
Operating ambient temperature
3
26
V–
V+ – 2
LM358B, LM358BA
–40
85
LM2904B, LM2904BA, LM2904,
LM2904V
–40
125
LM358, LM358A
0
70
LM258, LM258A
–20
85
LM158, LM158A
–55
125
UNIT
V
V
°C
7.4 Thermal Information
LM258, LM258A, LM358, LM358A, LM358B, LM358BA, LM2904,
LM2904B, LM2904BA, LM2904V (2)
THERMAL METRIC (1)
LM158, LM158A
D
(SOIC)
DGK
(VSSOP)
P
(PDIP)
PS
(SO)
PW
(TSSOP)
FK
(LCCC)
JG
(CDIP)
UNIT
8 PINS
8 PINS
8 PINS
8 PINS
8 PINS
20 PINS
8 PINS
RθJA
Junction-to-ambient thermal
resistance
124.7
181.4
80.9
116.9
171.7
84.0
112.4
°C/W
RθJC(top)
Junction-to-case (top)
thermal resistance
66.9
69.4
70.4
62.5
68.8
56.9
63.6
°C/W
RθJB
Junction-to-board thermal
resistance
67.9
102.9
57.4
68.6
99.2
57.5
100.3
°C/W
ψJT
Junction-to-top
characterization parameter
19.2
11.8
40
21.9
11.5
51.7
35.7
°C/W
ψJB
Junction-to-board
characterization parameter
67.2
101.2
56.9
67.6
97.9
57.1
93.3
°C/W
RθJC(bot)
Junction-to-case (bottom)
thermal resistance
—
—
—
—
—
10.6
22.3
°C/W
(1)
(2)
For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.
For a listing of which devices are available in what packages, see Device Comparison Table.
Copyright © 1976–2019, Texas Instruments Incorporated
7
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
ZHCSIT6W – JUNE 1976 – REVISED OCTOBER 2019
www.ti.com.cn
7.5 Electrical Characteristics: LM358B and LM358BA
VS = (V+) – (V–) = 5 V - 36 V (±2.5 V - ±18 V), TA = 25°C, VCM = VOUT = VS/2, RL = 10k connected to VS/2
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
±0.3
±3.0
mV
±4
mV
±2.0
mV
OFFSET VOLTAGE
LM358B
VOS
TA = –40°C to +85°C
Input offset voltage
LM358BA
TA = –40°C to +85°C
dVOS/dT
Input offset voltage drift
PSRR
Power Supply Rejection Ratio
Channel separation, dc
±2.5
TA = -40°C to +85°C (1)
f = 1 kHz to 20 kHz
mV
±3.5
11
µV/°C
±2
15
µV/V
±1
µV/V
INPUT VOLTAGE RANGE
VCM
Common-mode voltage range
VS = 3 V to 36 V
VS = 5 V to 36 V
CMRR
Common-mode rejection ratio
TA = –40°C to +85°C
(V–) ≤ VCM ≤ (V+) – 1.5 V
VS = 3 V to 36 V
(V–) ≤ VCM ≤ (V+) – 2.0 V
VS = 5 V to 36 V
(V–)
(V+) – 1.5
V
(V–)
(V+) – 2
V
20
100
25
316
±10
±35
nA
±50
nA
4
nA
µV/V
TA = –40°C to +85°C
INPUT BIAS CURRENT
IB
Input bias current
TA = –40°C to +85°C (1)
0.5
IOS
Input offset current
dIOS/dT
Input offset current drift
TA = –40°C to +85°C (1)
5
TA = –40°C to +85°C
10
nA
pA/℃
NOISE
En
Input voltage noise
f = 0.1 to 10 Hz
en
Input voltage noise density
f = 1 kHz
3
µVPP
40
nV/√/Hz
10 || 0.1
MΩ|| pF
4 || 1.5
GΩ|| pF
INPUT IMPEDANCE
ZID
Differential
ZIC
Common-mode
OPEN-LOOP GAIN
AOL
Open-loop voltage gain
VS = 15 V; VO = 1 V to 11 V; RL ≥ 10 kΩ, connected to (V-)
70
TA = –40°C to +85°C
140
V/mV
35
V/mV
FREQUENCY RESPONSE
GBW
Gain bandwidth product
1.2
MHz
SR
Slew rate
G=+1
0.5
V/µs
Θm
Phase margin
G = + 1, RL = 10kΩ, CL = 20 pF
56
°
tOR
Overload recovery time
VIN × gain > VS
10
µs
ts
Settling time
To 0.1%, VS = 5 V, 2-V Step , G = +1, CL = 100 pF
4
µs
THD+N
Total harmonic distortion + noise
G = + 1, f = 1 kHz, VO = 3.53 VRMS, VS = 36V, RL = 100k, IOUT ≤ ±50µA, BW = 80 kHz
0.001
%
OUTPUT
Positive Rail (V+)
VO
Voltage output swing from rail
Negative Rail (V-)
VS = 5 V, RL ≤ 10 kΩ connected to (V–)
IO
Output current
VS = 15 V; VO = V-;
VID = 1 V
Source (1)
VS = 15 V; VO = V+;
VID = -1 V
Sink (1)
IOUT = 50 µA
1.35
1.42
V
IOUT = 1 mA
1.4
1.48
V
IOUT = 5 mA (1)
1.5
1.61
V
IOUT = 50 µA
100
150
mV
IOUT = 1 mA
0.75
1
V
5
20
mV
TA = –40°C to +85°C
-20
TA = –40°C to +85°C
ISC
Short-circuit current
CLOAD
Capacitive load drive
RO
Open-loop output resistance
mA
10
TA = –40°C to +85°C
VID = -1 V; VO = (V-) + 200 mV
20
5
60
VS = 20 V, (V+) = 10 V, (V-) = -10 V, VO = 0 V
-30
-10
100
±40
f = 1 MHz, IO = 0 A
μA
±60
mA
100
pF
300
Ω
POWER SUPPLY
IQ
Quiescent current per amplifier
VS = 5 V; IO = 0 A
IQ
Quiescent current per amplifier
VS = 36 V; IO = 0 A
(1)
8
300
TA = –40°C to +85°C
460
µA
800
µA
Specified by characterization only
Copyright © 1976–2019, Texas Instruments Incorporated
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
www.ti.com.cn
ZHCSIT6W – JUNE 1976 – REVISED OCTOBER 2019
7.6 Electrical Characteristics: LM2904B and LM2904B
VS = (V+) – (V–) = 5 V - 36 V (±2.5 V - ±18 V), TA = 25°C, VCM = VOUT = VS/2, RL = 10k connected to VS/2
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
±0.3
±3.0
mV
±4
mV
±2.0
mV
OFFSET VOLTAGE
LM2904B
VOS
TA = –40°C to +125°C
Input offset voltage
LM2904BA
TA = –40°C to +125°C
dVOS/dT
Input offset voltage drift
PSRR
Power Supply Rejection Ratio
Channel separation, dc
±2.5
TA = –40°C to +125°C (1)
f = 1 kHz to 20 kHz
mV
±3.5
12
µV/°C
±2
15
µV/V
±1
µV/V
INPUT VOLTAGE RANGE
VCM
Common-mode voltage range
VS = 3 V to 36 V
VS = 5 V to 36 V
CMRR
Common-mode rejection ratio
TA = –40°C to +125°C
(V–) ≤ VCM ≤ (V+) – 1.5 V
VS = 3 V to 36 V
(V–) ≤ VCM ≤ (V+) – 2.0 V
VS = 5 V to 36 V
(V–)
(V+) – 1.5
V
(V–)
(V+) – 2
V
20
100
25
316
±10
±35
nA
±50
nA
4
nA
µV/V
TA = –40°C to +125°C
INPUT BIAS CURRENT
IB
Input bias current
TA = –40°C to +125°C (1)
0.5
IOS
Input offset current
dIOS/dT
Input offset current drift
TA = –40°C to +125°C (1)
5
TA = –40°C to +125°C
10
nA
pA/℃
NOISE
En
Input voltage noise
f = 0.1 to 10 Hz
en
Input voltage noise density
f = 1 kHz
3
µVPP
40
nV/√/Hz
10 || 0.1
MΩ|| pF
4 || 1.5
GΩ|| pF
INPUT IMPEDANCE
ZID
Differential
ZIC
Common-mode
OPEN-LOOP GAIN
AOL
Open-loop voltage gain
VS = 15 V; VO = 1 V to 11 V; RL ≥ 10 kΩ, connected to (V-)
70
TA = –40°C to +125°C
140
V/mV
35
V/mV
FREQUENCY RESPONSE
GBW
Gain bandwidth product
1.2
MHz
SR
Slew rate
G=+1
0.5
V/µs
Θm
Phase margin
G = + 1, RL = 10kΩ, CL = 20 pF
56
°
tOR
Overload recovery time
VIN × gain > VS
10
µs
ts
Settling time
To 0.1%, VS = 5 V, 2-V Step , G = +1, CL = 100 pF
4
µs
THD+N
Total harmonic distortion + noise
G = + 1, f = 1 kHz, VO = 3.53 VRMS, VS = 36V, RL = 100k, IOUT ≤ ±50µA, BW = 80 kHz
0.001
%
OUTPUT
Positive Rail (V+)
VO
Voltage output swing from rail
Negative Rail (V-)
VS = 5 V, RL ≤ 10 kΩ connected to (V–)
IO
Output current
VS = 15 V; VO = V-; VID =
1V
Source (1)
VS = 15 V; VO = V+; VID
= -1 V
Sink (1)
IOUT = 50 µA
1.35
1.42
V
IOUT = 1 mA
1.4
1.48
V
IOUT = 5 mA (1)
1.5
1.61
V
IOUT = 50 µA
100
150
mV
IOUT = 1 mA
0.75
1
V
5
20
mV
TA = –40°C to +125°C
-20
TA = –40°C to +125°C
ISC
Short-circuit current
CLOAD
Capacitive load drive
RO
Open-loop output resistance
mA
10
TA = –40°C to +125°C
VID = -1 V; VO = (V-) + 200 mV
20
5
60
VS = 20 V, (V+) = 10 V, (V-) = -10 V, VO = 0 V
-30
-10
100
±40
f = 1 MHz, IO = 0 A
μA
±60
mA
100
pF
300
Ω
POWER SUPPLY
IQ
Quiescent current per amplifier
VS = 5 V; IO = 0 A
IQ
Quiescent current per amplifier
VS = 36 V; IO = 0 A
(1)
300
TA = –40°C to +125°C
460
µA
800
µA
Specified by characterization only
Copyright © 1976–2019, Texas Instruments Incorporated
9
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
ZHCSIT6W – JUNE 1976 – REVISED OCTOBER 2019
www.ti.com.cn
7.7 Electrical Characteristics: LM358, LM358A
For VS = (V+) – (V–) = 5 V, TA = 25 °C, (unless otherwise noted)
TEST CONDITIONS (1)
PARAMETER
MIN
TYP (2)
MAX
3
7
UNIT
OFFSET VOLTAGE
LM358
VOS
Input offset voltage
VS = 5 V to 30 V; VCM = 0 V; VO = 1.4
V
TA = 0°C to 70°C
9
mV
LM358A
2
TA = 0°C to 70°C
dVOS/dT
Input offset voltage drift
PSRR
Input offset voltage vs power
supply (ΔVIO/ΔVS)
VS = 5 V to 30 V
VO1/ VO2
Channel separation
f = 1 kHz to 20 kHz
3
5
LM358
TA = 0°C to 70°C
7
LM358A
TA = 0°C to 70°C
7
µV/°C
65
20
100
dB
120
dB
INPUT VOLTAGE RANGE
VCM
Common-mode voltage range
CMRR
Common-mode rejection ratio
VS = 5 V to 30 V
LM358
VS = 30 V
LM358A
VS = 5 V to 30 V
LM358
VS = 30 V
LM358A
(V–)
(V+) – 1.5
(V–)
(V+) – 2
V
TA = 0°C to 70°C
VS = 5 V to 30 V; VCM = 0 V
65
80
dB
INPUT BIAS CURRENT
–20
–250
LM358
IB
Input bias current
TA = 0°C to 70°C
VO = 1.4 V
–500
nA
–15
–100
LM358A
TA = 0°C to 70°C
–200
2
50
LM358
IOS
Input offset current
TA = 0°C to 70°C
VO = 1.4 V
150
nA
2
30
LM358A
TA = 0°C to 70°C
75
10
dIOS/dT
Input offset current drift
pA/°C
LM358A
TA = 0°C to 70°C
300
NOISE
en
Input voltage noise density
f = 1 kHz
40
nV/√Hz
OPEN-LOOP GAIN
AOL
Open-loop voltage gain
25
VS = 15 V; VO = 1 V to 11 V; RL ≥ 2 kΩ
100
V/mV
TA = 0°C to 70°C
15
FREQUENCY RESPONSE
GBW
Gain bandwidth product
SR
Slew rate
G = +1
0.7
MHz
0.3
V/µs
OUTPUT
VS = 30 V; RL = 2 kΩ
Positive rail
VO
Voltage output swing from rail
TA = 0°C to 70°C
4
VS = 30 V; RL ≥ 10 kΩ
2
VS = 5 V; RL ≥ 2 kΩ
Negative rail
VS = 5 V; RL ≤ 10 kΩ
TA = 0°C to 70°C
5
–20
VS = 15 V; VO = 0 V; VID
=1V
IO
Source
VS = 15 V; VO = 15 V;
VID = –1 V
Short-circuit current
20
mV
–60
–10
10
mA
20
Sink
TA = 0°C to 70°C
VID = –1 V; VO = 200 mV
ISC
V
–30
LM358A
TA = 0°C to 70°C
Output current
3
1.5
5
12
VS = 10 V; VO = VS / 2
30
±40
µA
±60
mA
POWER SUPPLY
IQ
(1)
(2)
10
Quiescent current per
amplifier
VO = 2.5 V; IO = 0 A
VS = 30 V; VO = 15 V; IO = 0 A
TA = 0°C to 70°C
350
600
500
1000
µA
All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified.
Maximum VS for testing purposes is 30 V for LM358 and LM358A.
All typical values are TA = 25°C.
版权 © 1976–2019, Texas Instruments Incorporated
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
www.ti.com.cn
ZHCSIT6W – JUNE 1976 – REVISED OCTOBER 2019
7.8 Electrical Characteristics: LM2904, LM2904V
For VS = (V+) – (V–) = 5 V, TA = 25 °C, (unless otherwise noted)
TEST CONDITIONS (1)
PARAMETER
MIN
TYP
(2)
MAX
UNIT
OFFSET VOLTAGE
VOS
Input offset voltage
VS = 5 V to maximum; VCM = 0 V; VO = 1.4
V
dVOS/dT
Input offset voltage drift
PSRR
Input offset voltage vs power
supply (ΔVIO/ΔVS)
VS = 5 V to 30 V
VO1/ VO2
Channel separation
f = 1 kHz to 20 kHz
Non-A suffix
devices
A-suffix
devices
3
TA = –40°C to 125°C
7
10
mV
1
TA = –40°C to 125°C
2
4
TA = –40°C to 125°C
7
65
µV/°C
100
dB
120
dB
INPUT VOLTAGE RANGE
VCM
Common-mode voltage range
CMRR
Common-mode rejection ratio
VS = 5 V to maximum
(V–)
(V+) – 1.5
(V–)
(V+) – 2
V
TA = –40°C to 125°C
VS = 5 V to maximum; VCM = 0 V
65
80
dB
INPUT BIAS CURRENT
–20
IB
Input bias current
VO = 1.4 V
Non-V suffix
device
IOS
Input offset current
VO = 1.4 V
V-suffix
device
dIOS/dT
–250
nA
TA = –40°C to 125°C
Input offset current drift
–500
2
TA = –40°C to 125°C
50
300
nA
2
TA = –40°C to 125°C
50
150
TA = –40°C to 125°C
10
pA/°C
40
nV/√Hz
NOISE
en
Input voltage noise density
f = 1 kHz
OPEN-LOOP GAIN
AOL
Open-loop voltage gain
VS = 15 V; VO = 1 V to 11 V; RL ≥ 2 kΩ
25
100
V/mV
TA = –40°C to 125°C
15
FREQUENCY RESPONSE
GBW
Gain bandwidth product
SR
Slew rate
G = +1
0.7
MHz
0.3
V/µs
OUTPUT
RL ≥ 10 kΩ
Non-V suffix
device
Positive rail
VO
VS – 1.5
VS = maximum; RL =
2 kΩ
Voltage output swing from rail
VS = maximum; RL =
2 kΩ
V-suffix device
Negative rail
4
VS = maximum; RL ≥
10 kΩ
2
TA = –40°C to 125°C
–20
VS = 15 V; VO = 0 V; VID = 1 V
Source
VS = 15 V; VO = 15 V; VID = –1 V
Sink
TA = –40°C to 125°C
Output current
TA = –40°C to 125°C
ISC
Short-circuit current
5
5
20
mV
–30
mA
20
5
Non-V suffix device
VID = -1 V; VO = 200 mV
4
–10
10
IO
V
6
VS = maximum; RL ≥
10 kΩ
VS = 5 V; RL ≤ 10 kΩ
3
TA = –40°C to 125°C
30
µA
V-suffix device
12
VS = 10 V; VO = VS / 2
40
±40
±60
mA
POWER SUPPLY
IQ
(1)
(2)
Quiescent current per amplifier
VO = 2.5 V; IO = 0 A
VS = maximum; VO = maximum / 2; IO = 0 A
TA = –40°C to 125°C
350
600
500
1000
µA
All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified.
Maximum VS for testing purposes is 26 V for LM2904 and 32 V for LM2904V.
All typical values are TA = 25°C.
版权 © 1976–2019, Texas Instruments Incorporated
11
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
ZHCSIT6W – JUNE 1976 – REVISED OCTOBER 2019
www.ti.com.cn
7.9 Electrical Characteristics: LM158, LM158A
For VS = (V+) – (V–) = 5 V, TA = 25 °C, (unless otherwise noted)
TEST CONDITIONS (1)
PARAMETER
MIN
TYP (2)
MAX
3
5
UNIT
OFFSET VOLTAGE
LM158
VOS
Input offset voltage
TA = –55°C to 125°C
VS = 5 V to 30 V; VCM = 0 V; VO = 1.4 V
7
mV
2
LM158A
TA = –55°C to 125°C
dVOS/dT
Input offset voltage drift
PSRR
Input offset voltage vs power supply
(ΔVIO/ΔVS)
VS = 5 V to 30 V
VO1/ VO2
Channel separation
f = 1 kHz to 20 kHz
4
LM158
TA = –55°C to 125°C
7
LM158A
TA = –55°C to 125°C
7
65
15 (3)
µV/°C
100
dB
120
dB
INPUT VOLTAGE RANGE
VCM
Common-mode voltage range
CMRR
Common-mode rejection ratio
VS = 5 V to 30 V
LM158
VS = 30 V
LM158A
VS = 5 V to 30 V
LM158
VS = 30 V
LM158A
(V–)
(V+) – 1.5
(V–)
(V+) – 2
V
TA = –55°C to 125°C
VS = 5 V to 30 V; VCM = 0 V
70
80
dB
INPUT BIAS CURRENT
–20
–150
LM158
IB
Input bias current
TA = –55°C to 125°C
VO = 1.4 V
–300
nA
–15
–50
LM158A
TA = –55°C to 125°C
–100
2
30
LM158
IOS
Input offset current
TA = –55°C to 125°C
VO = 1.4 V
100
nA
2
10
LM158A
TA = –55°C to 125°C
30
10
dIOS/dT
Input offset current drift
pA/°C
LM158A
TA = –55°C to 125°C
200
NOISE
en
Input voltage noise density
f = 1 kHz
40
nV/√Hz
OPEN-LOOP GAIN
AOL
Open-loop voltage gain
50
VS = 15 V; VO = 1 V to 11 V; RL ≥ 2 kΩ
100
V/mV
TA = –55°C to 125°C
25
FREQUENCY RESPONSE
GBW
Gain bandwidth product
SR
Slew rate
G = +1
0.7
MHz
0.3
V/µs
OUTPUT
VS = 30 V; RL = 2 kΩ
Positive rail
VO
Voltage output swing from rail
TA = –55°C to 125°C
4
VS = 30 V; RL ≥ 10 kΩ
2
VS = 5 V; RL ≥ 2 kΩ
Negative rail
VS = 5 V; RL ≤ 10 kΩ
TA = –55°C to 125°C
5
–20
VS = 15 V; VO = 0 V; VID = 1 V
IO
Source
VS = 15 V; VO = 15 V; VID = –1
V
Short-circuit current
20
mV
–60
–10
10
mA
20
Sink
TA = –55°C to 125°C
VID = –1 V; VO = 200 mV
ISC
V
–30
LM158A
TA = –55°C to 125°C
Output current
3
1.5
5
12
VS = 10 V; VO = VS / 2
30
±40
µA
±60
mA
POWER SUPPLY
IQ
(1)
(2)
(3)
12
Quiescent current per amplifier
VO = 2.5 V; IO = 0 A
VS = 30 V; VO = 15 V; IO = 0 A
TA = –55°C to 125°C
350
600
500
1000
µA
All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified.
Maximum VS for testing purposes is 30 V for LM158 and LM158A.
All typical values are TA = 25°C.
On products compliant to MIL-PRF-38535, this parameter is not production tested.
版权 © 1976–2019, Texas Instruments Incorporated
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
www.ti.com.cn
ZHCSIT6W – JUNE 1976 – REVISED OCTOBER 2019
7.10 Electrical Characteristics: LM258, LM258A
For VS = (V+) – (V–) = 5 V, TA = 25 °C, (unless otherwise noted)
TEST CONDITIONS (1)
PARAMETER
MIN
TYP (2)
MAX
3
5
UNIT
OFFSET VOLTAGE
LM258
VOS
Input offset voltage
TA = –25°C to 85°C
VS = 5 V to 30 V; VCM = 0 V; VO = 1.4 V
7
mV
2
3
LM258A
TA = –25°C to 85°C
4
LM258
dVOS/dT
Input offset voltage drift
PSRR
Input offset voltage vs power supply
(ΔVIO/ΔVS)
VS = 5 V to 30 V
VO1/ VO2
Channel separation
f = 1 kHz to 20 kHz
LM258A
7
TA = –25°C to 85°C
µV/°C
7
65
15
100
dB
120
dB
INPUT VOLTAGE RANGE
VCM
Common-mode voltage range
CMRR
Common-mode rejection ratio
VS = 5 V to 30 V
LM258
VS = 30 V
LM258A
VS = 5 V to 30 V
LM258
VS = 30 V
LM258A
(V–)
(V+) – 1.5
(V–)
(V+) – 2
V
TA = –25°C to 85°C
VS = 5 V to 30 V; VCM = 0 V
70
80
dB
INPUT BIAS CURRENT
–20
–150
LM258
IB
Input bias current
TA = –25°C to 85°C
VO = 1.4 V
–300
nA
–15
–80
LM258A
TA = –25°C to 85°C
–100
2
30
LM258
IOS
Input offset current
TA = –25°C to 85°C
VO = 1.4 V
100
nA
2
15
LM258A
TA = –25°C to 85°C
30
10
dIOS/dT
Input offset current drift
pA/°C
LM258A
TA = –25°C to 85°C
200
NOISE
en
Input voltage noise density
f = 1 kHz
40
nV/√Hz
OPEN-LOOP GAIN
AOL
Open-loop voltage gain
50
VS = 15 V; VO = 1 V to 11 V; RL ≥ 2 kΩ
100
V/mV
TA = –25°C to 85°C
25
FREQUENCY RESPONSE
GBW
Gain bandwidth product
SR
Slew rate
G = +1
0.7
MHz
0.3
V/µs
OUTPUT
VS = 30 V; RL = 2 kΩ
Positive rail
VO
Voltage output swing from rail
TA = –25°C to 85°C
4
VS = 30 V; RL ≥ 10 kΩ
2
VS = 5 V; RL ≥ 2 kΩ
Negative rail
VS = 5 V; RL ≤ 10 kΩ
TA = –25°C to 85°C
5
–20
VS = 15 V; VO = 0 V; VID = 1 V
IO
Source
VS = 15 V; VO = 15 V; VID = –1
V
Short-circuit current
20
mV
–60
–10
10
mA
20
Sink
TA = –25°C to 85°C
VID = –1 V; VO = 200 mV
ISC
V
–30
LM258A
TA = –25°C to 85°C
Output current
3
1.5
5
12
VS = 10 V; VO = VS / 2
30
±40
µA
±60
mA
POWER SUPPLY
IQ
(1)
(2)
Quiescent current per amplifier
VO = 2.5 V; IO = 0 A
VS = 30 V; VO = 15 V; IO = 0 A
TA = –25°C to 85°C
350
600
500
1000
µA
All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified.
Maximum VS for testing purposes is 30 V for LM258 and LM258A.
All typical values are TA = 25°C.
版权 © 1976–2019, Texas Instruments Incorporated
13
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
ZHCSIT6W – JUNE 1976 – REVISED OCTOBER 2019
www.ti.com.cn
7.11 Typical Characteristics
20
30
18
27
16
24
14
21
Amplifiers (%)
Amplifiers (%)
Typical characteristics section is applicable for LM358B and LM2904B. The typical characteristics data section was taken with
TA = 25°C, VS = 36 V (±18 V), VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2 (unless otherwise noted).
12
10
8
18
15
12
6
9
4
6
2
3
0
-1800
0
-1200
-600
0
600
Offset Voltage (µV)
1200
1800
0
DC11
0.25 0.5 0.75 1 1.25 1.5 1.75 2
Offset Voltage Drift (µV/°C)
750
500
450
300
150
-150
-450
-750
-40
100
-100
-300
-20
0
20
40
60
Temperature (°C)
80
100
-500
-18
120
80
90
60
70
80
60
70
50
60
40
50
30
40
20
30
10
20
10
Gain (dB)
Phase (°)
-20
10k
100k
Frequency (Hz)
12
17
DC10
40
30
20
10
0
-10
-20
-10
-30
1M
G=1
G = 10
G = 100
G = 1000
G = –1
50
0
1k
D012
图 5. Open-Loop Gain and Phase vs Frequency
14
Closed Lopp Voltage Gain (dB)
70
0
-6
0
6
Common-Mode Voltage (V)
图 4. Offset Voltage vs Common-Mode Voltage
100
Phase ( )
Open Loop Voltage Gain (dB)
图 3. Offset Voltage vs Temperature
1k
-12
DC10
90
-10
DC12
图 2. Offset Voltage Drift Distribution
Offset Voltage (µV)
Offset Voltage (µV)
图 1. Offset Voltage Production Distribution
2.25 2.5 2.75
10k
100k
Frequency (Hz)
1M
D017
图 6. Closed-Loop Gain vs Frequency
版权 © 1976–2019, Texas Instruments Incorporated
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
www.ti.com.cn
ZHCSIT6W – JUNE 1976 – REVISED OCTOBER 2019
Typical Characteristics (接
接下页)
Typical characteristics section is applicable for LM358B and LM2904B. The typical characteristics data section was taken with
TA = 25°C, VS = 36 V (±18 V), VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2 (unless otherwise noted).
-5
120
IB+
IB–
Input Offset Current (pA)
100
Input Bias Current (nA)
-7.5
-10
-12.5
80
60
40
20
0
-20
-15
-20
-15
-10
-5
0
5
10
Common-Mode Voltage (V)
15
-40
-20
20
-10
-5
0
5
10
Common-Mode Voltage (V)
15
20
DC3I
图 8. Input Offset Current vs Common-Mode Voltage
0.06
-7
0.045
Input Offset Current (nA)
Input Bias Current (nA)
图 7. Input Bias Current vs Common-Mode Voltage
-6
-8
-9
IB+
IB–
-10
-15
DC3I
0.03
0.015
0
-0.015
-11
-12
-40
-10
20
50
Temperature (°C)
80
110
-0.03
-40
130
-10
20
50
Temperature (°C)
DCIB
图 9. Input Bias Current vs Temperature
80
110
130
DCIO
图 10. Input Offset Current vs Temperature
V+
(V–) + 18 V
–40 C
25 C
125 C
(V–) + 15 V
Output Voltage (V)
Output Voltage (V)
(V+) – 3 V
(V+) – 6 V
(V–) + 12 V
(V–) + 9 V
(V–) + 6 V
(V+) – 9 V
–40 C
25 C
125 C
(V–) + 3 V
V–
(V+) – 12 V
0
10
20
30
Output Current (mA)
图 11. Output Voltage Swing vs
Output Current (Sourcing)
版权 © 1976–2019, Texas Instruments Incorporated
40
50
DC13
0
5
10
15
20
25
Output Current (mA)
30
35
40
DC1-
图 12. Output Voltage Swing vs
Output Current (Sinking)
15
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
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Typical Characteristics (接
接下页)
Typical characteristics section is applicable for LM358B and LM2904B. The typical characteristics data section was taken with
TA = 25°C, VS = 36 V (±18 V), VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2 (unless otherwise noted).
120
100
90
PSRR and CMRR (dB)
80
Common-Mode Rejection Ratio (dB)
PSRR+
PSRRCMRR
70
60
50
40
30
20
10
10k
100k
Frequency (Hz)
110
105
100
95
90
VS = 36V
VS = 5V
85
-40
0
1k
115
1M
20
50
Temperature (°C)
D001
图 13. CMRR and PSRR vs Frequency
80
110
130
DC2_
图 14. Common-Mode Rejection Ratio vs
Temperature (dB)
-118
1.6
1.2
-119
0.8
Voltage (µV)
Power Supply Rejection Ratio (dB)
-10
-120
-121
0.4
0
-0.4
-0.8
-1.2
-122
-1.6
-123
-40
-2
-20
0
20
40
60
80
Temperature (°C)
100
120
0
140
1
2
3
DC8_
4
5
6
Time (s)
7
8
9
10
D011
VS = 5 V to 36 V
图 16. 0.1-Hz to 10-Hz Noise
100
-32
90
-40
80
-48
70
-56
THD+N (dB)
Voltage Noise Spectral Density (nV/—Hz)
图 15. Power Supply Rejection Ratio vs
Temperature (dB)
60
50
40
-64
-72
-80
-88
30
20
-96
10
-104
0
10
10 k
2k
-112
100
1k
Frequency (Hz)
10k
100k
D010
100
1k
Frequency (Hz)
10k
D013
G = 1, f = 1 kHz, BW = 80 kHz,
VOUT = 10 VPP, RL connected to V–
图 17. Input Voltage Noise Spectral Density vs Frequency
16
图 18. THD+N Ratio vs Frequency, G = 1
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LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
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ZHCSIT6W – JUNE 1976 – REVISED OCTOBER 2019
Typical Characteristics (接
接下页)
Typical characteristics section is applicable for LM358B and LM2904B. The typical characteristics data section was taken with
TA = 25°C, VS = 36 V (±18 V), VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2 (unless otherwise noted).
-32
-40
-48
-50
-56
-60
THD+N (dB)
THD+N (dB)
-40
-30
10 k
2k
-64
-72
-70
-80
-80
-90
-88
-100
-96
-110
-104
100
1k
Frequency (Hz)
10 k
2k
-120
0.001
10k
G = –1, f = 1 kHz, BW = 80 kHz,
VOUT = 10 VPP, RL connected to V–
0.1
Amplitude (VPP)
1
10 20
D015
G = 1, f = 1 kHz, BW = 80 kHz,
RL connected to V–
图 19. THD+N Ratio vs Frequency, G = –1
图 20. THD+N vs Output Amplitude, G = 1
-20
460
-35
430
Quiescent Current (µA)
THD+N (dB)
0.01
D014
-50
-65
-80
400
370
340
310
-95
10 k
2k
280
-110
0.001
0.01
0.1
Amplitude (VPP)
1
3
10 20
9
15
21
Supply Voltage (V)
D016
27
33
36
DC_S
G = –1, f = 1 kHz, BW = 80 kHz,
RL connected to V–
图 21. THD+N vs Output Amplitude, G = –1
图 22. Quiescent Current vs Supply Voltage
540
500
VS = 36V
VS = 5V
Open Loop Output Impedance ( )
Quiescent Current per Amplifier (µA)
600
480
420
360
300
240
-40
-20
0
20
40
60
Temperature (°C)
80
100
图 23. Quiescent Current vs Temperature
版权 © 1976–2019, Texas Instruments Incorporated
120
DC4_
400
300
200
100
1k
10k
100k
Frequency (Hz)
1M
D006
图 24. Open-Loop Output Impedance vs Frequency
17
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
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Typical Characteristics (接
接下页)
Typical characteristics section is applicable for LM358B and LM2904B. The typical characteristics data section was taken with
TA = 25°C, VS = 36 V (±18 V), VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2 (unless otherwise noted).
44
18
Overshoot (+)
Overshoot (-)
36
14
32
12
28
24
20
10
8
6
16
4
12
2
8
0
40
80
Overshoot (+)
Overshoot (–)
16
Overshoot (%)
Overshoot (%)
40
120 160 200 240
Capacitance load (pF)
280
320
0
40
360
G = 1, 100-mV output step, RL = open
120
160
200
240
Capacitance load (pF)
280
320
360
D020
G = –1, 100-mV output step, RL = open
图 25. Small-Signal Overshoot vs Capacitive Load
图 26. Small-Signal Overshoot vs Capacitive Load
20
60
Input
Output
57
54
10
51
Voltage (V)
Phase Margin (°)
80
D019
48
45
42
39
0
-10
36
33
-20
30
0
40
80
120 160 200 240
Capacitance Load (pF)
280
320
0
360
200
D018
400
600
Time ( s)
800
1000
D021
G = –10
图 28. Overload Recovery
10
7.5
7.5
5
5
Voltage (mV)
Voltage (mV)
图 27. Phase Margin vs Capacitive Load
10
2.5
0
-2.5
-5
0
-2.5
-5
-7.5
-7.5
Input
Output
-10
Input
Output
-10
0
20
40
60
80
Time ( s)
G = 1, RL = open
图 29. Small-Signal Step Response, G = 1
18
2.5
100
D022
0
20
40
60
80
Time ( s)
100
D023
G = –1, RL = open, RFB = 10K
图 30. Small-Signal Step Response, G = –1
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LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
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Typical Characteristics (接
接下页)
20
40
16
32
Output Delta from Final Value (mV)
Output Delta from Final Value (mV)
Typical characteristics section is applicable for LM358B and LM2904B. The typical characteristics data section was taken with
TA = 25°C, VS = 36 V (±18 V), VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2 (unless otherwise noted).
12
8
4
0
-4
-8
-12
-16
24
16
8
0
-8
-16
-24
-32
-20
-40
0
0.5
1
1.5
2
2.5
3
Time ( s)
3.5
4
4.5
5
0
0.5
1
1.5
G = 1, RL = open
2.5
3
Time ( s)
3.5
4
4.5
5
D004
G = 1, RL = open
图 31. Large-Signal Step Response (Rising)
图 32. Large-Signal Step Response (Falling)
2.5
0.675
Output
Input
2
Positive
Negative
1.5
0.625
Slew Rate(V/ s)
1
Votlage (V)
2
D003
0.5
0
-0.5
-1
-1.5
0.575
0.525
0.475
-2
-2.5
0
20
40
60
80
100
Time (µs)
0.425
-40
-25
-10
5
20
AC_S
35 50 65
Temp( C)
80
95
110 125
D009
G = 1, RL = open
图 34. Slew Rate vs Temperature
图 33. Large-Signal Step Response
Short-Circuit Current (mA)
40
20
Sinking
Sourcing
0
-20
-40
-60
-40 -25 -10
5
20 35 50 65
Temperature (°C)
80
95
110 125
DC7_
Maximum Output Voltage (V PP)
60
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
1k
10k
100k
Frequency (Hz)
1M
D005
VS = 15 V
图 35. Short-Circuit Current vs Temperature
版权 © 1976–2019, Texas Instruments Incorporated
图 36. Maximum Output Voltage vs Frequency
19
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
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Typical Characteristics (接
接下页)
Typical characteristics section is applicable for LM358B and LM2904B. The typical characteristics data section was taken with
TA = 25°C, VS = 36 V (±18 V), VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2 (unless otherwise noted).
-75
90
84
78
72
-95
EMIRR (dB)
Channel Separation (dB)
-85
-105
-115
66
60
54
48
42
36
-125
30
-135
1k
10k
100k
Frequency (Hz)
图 37. Channel Separation vs Frequency
20
24
1M
1M
D008
10M
100M
Frequency (Hz)
1G
D007
图 38. EMIRR (Electromagnetic Interference Rejection Ratio)
vs Frequency
版权 © 1976–2019, Texas Instruments Incorporated
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
www.ti.com.cn
ZHCSIT6W – JUNE 1976 – REVISED OCTOBER 2019
7.12 Typical Characteristics
Typical characteristics section is applicable for LM158, LM158A, LM258, LM258A, LM358, LM358A, LM2904, and LM2904V.
20
0.36
18
0.34
–55C
0C
125C
Supply Current (mA)
Input Current (nAdc)
16
14
12
10
8
5Vdc
15Vdc
30Vdc
6
4
0.32
0.3
0.28
0.26
0.24
0.22
2
0
–55
–35
–15
5
45
25
65
Temperature (°C)
85
105
0.2
125
0
5
图 39. Input Current vs Temperature
25
30
图 40. Supply Current vs Supply Voltage
160
100
CMRR
90
RL=20K
RL=2K
140
80
120
70
100
CMRR (dB)
Avol Voltage Gain (dB)
10
15
20
Supply Voltage (Vdc)
80
60
60
50
40
30
40
20
20
10
0
0
0
5
10
15
20
25
30
V+ Supply Voltage (Vdc)
35
0.1
40
10
100
1000
Frequency (kHz)
图 41. Voltage Gain vs Supply Voltage
C001
图 42. Common-Mode Rejection Ratio vs Frequency
0.50
3.5
VOUT
3.0
0.45
Voltage (V)
2.5
Voltage (V)
1
2.0
1.5
0.40
0.35
0.30
1.0
0.25
0.5
VOUT
0.20
0.0
0
4
8
12
16
20
24
Time ( s)
28
32
36
40
C001
图 43. Voltage Follower Large Signal Response (50 pF)
版权 © 1976–2019, Texas Instruments Incorporated
0
2
4
6
Time ( s)
8
10
C001
图 44. Voltage Follower Small Signal Response (50 pF)
21
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
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Typical Characteristics (接
接下页)
Typical characteristics section is applicable for LM158, LM158A, LM258, LM258A, LM358, LM358A, LM2904, and LM2904V.
8
Output Voltage (Vdc) relative to Vcc
20
17.5
Output Swing (Vp-p)
15
12.5
10
7.5
5
2.5
0
1
10
100
Frequency (kHz)
7
6
5
4
3
2
1
0.001
1k
图 45. Maximum Output Swing vs Frequency
(VCC = 15 V)
0.1
1
Output Sink Current (mAdc)
10
100
图 46. Output Sourcing Characteristics
90
10
5Vdc
15Vdc
30Vdc
80
Output Current (mAdc)
Output Voltage (Vdc)
0.01
1
0.1
70
60
50
40
30
20
10
0.01
0.001
0
0.01
0.1
1
10
Output Sink Current (mAdc)
图 47. Output Sinking Characteristics
22
100
–55
–35
–15
5
45
25
65
Temperature (°C)
85
105
125
图 48. Source Current Limiting
版权 © 1976–2019, Texas Instruments Incorporated
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
www.ti.com.cn
ZHCSIT6W – JUNE 1976 – REVISED OCTOBER 2019
8 Parameter Measurement Information
900 Ω
VCC+
VCC+
−
VI
VO
+
100 Ω
−
VI = 0 V
RS
VCC−
CL
RL
VO
+
VCC−
图 49. Unity-Gain Amplifier
图 50. Noise-Test Circuit
10 k
–
+18V
VIN
+
RL
-18V
GND
GND
图 51. Test Circuit, G = –1, for THD+N and Small-Signal Step Response
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LM158, LM158A, LM258, LM258A
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www.ti.com.cn
9 Detailed Description
9.1 Overview
These devices consist of two independent, high-gain frequency-compensated operational amplifiers designed to
operate from a single supply over a wide range of voltages. Operation from split supplies also is possible if the
difference between the two supplies is within the supply voltage range specified in the Recommended Operating
Conditions section, and VS is at least 1.5 V more positive than the input common-mode voltage. The low supplycurrent drain is independent of the magnitude of the supply voltage.
Applications include transducer amplifiers, dc amplification blocks, and all the conventional operational amplifier
circuits that now can be implemented more easily in single-supply-voltage systems. For example, these devices
can be operated directly from the standard 5-V supply used in digital systems and easily can provide the required
interface electronics without additional ±5-V supplies.
9.2 Functional Block Diagram - LM358B, LM358BA, LM2904B, LM2904BA
VCC+
~6 µA
Curren t
Regula tor
~6 µA
Curren t
Regula tor
~100 µA
Curren t
Regula tor
IN-
IN+
24
OUT
~120 µA
Curren t
Regula tor
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LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
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ZHCSIT6W – JUNE 1976 – REVISED OCTOBER 2019
9.3 Feature Description
9.3.1 Unity-Gain Bandwidth
The unity-gain bandwidth is the frequency up to which an amplifier with a unity gain may be operated without
greatly distorting the signal. These devices have a 1.2-MHz unity-gain bandwidth (B Version).
9.3.2 Slew Rate
The slew rate is the rate at which an operational amplifier can change its output when there is a change on the
input. These devices have a 0.5-V/µs slew rate (B Version).
9.3.3 Input Common Mode Range
The valid common mode range is from device ground to VS – 1.5 V (VS – 2 V across temperature). Inputs may
exceed VS up to the maximum VS without device damage. At least one input must be in the valid input commonmode range for the output to be the correct phase. If both inputs exceed the valid range, then the output phase is
undefined. If either input more than 0.3 V below V– then input current should be limited to 1 mA and the output
phase is undefined.
9.4 Device Functional Modes
These devices are powered on when the supply is connected. This device can be operated as a single-supply
operational amplifier or dual-supply amplifier, depending on the application.
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LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
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10 Application and Implementation
注
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
10.1 Application Information
The LMx58 and LM2904 operational amplifiers are useful in a wide range of signal conditioning applications.
Inputs can be powered before VS for flexibility in multiple supply circuits.
10.2 Typical Application
A typical application for an operational amplifier is an inverting amplifier. This amplifier takes a positive voltage on
the input, and makes it a negative voltage of the same magnitude. In the same manner, it also makes negative
voltages positive.
RF
RI
Vsup+
VOUT
VIN
+
Vsup-
图 52. Application Schematic
10.2.1 Design Requirements
The supply voltage must be chosen such that it is larger than the input voltage range and output range. For
instance, this application scales a signal of ±0.5 V to ±1.8 V. Setting the supply at ±12 V is sufficient to
accommodate this application.
10.2.2 Detailed Design Procedure
Determine the gain required by the inverting amplifier using 公式 1 and 公式 2:
VOUT
AV
VIN
1.8
AV
3.6
0.5
(1)
(2)
Once the desired gain is determined, choose a value for RI or RF. [Subscripts should be fixed in the
accompanying figures and equations also.] Choosing a value in the kilohm range is desirable because the
amplifier circuit uses currents in the milliampere range. This ensures the part does not draw too much current.
This example uses 10 kΩ for RI which means 36 kΩ is used for RF. This was determined by 公式 3.
RF
AV
(3)
RI
26
版权 © 1976–2019, Texas Instruments Incorporated
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
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ZHCSIT6W – JUNE 1976 – REVISED OCTOBER 2019
Typical Application (接
接下页)
10.2.3 Application Curve
2
VIN
1.5
VOUT
1
Volts
0.5
0
-0.5
-1
-1.5
-2
0
0.5
1
Time (ms)
1.5
2
图 53. Input and Output Voltages of the Inverting Amplifier
11 Power Supply Recommendations
CAUTION
Supply voltages larger than specified in the recommended operating region can
permanently damage the device (see the Absolute Maximum Ratings).
Place 0.1-µF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or highimpedance power supplies. For more detailed information on bypass capacitor placement, see the Layout
section.
12 Layout
12.1 Layout Guidelines
For best operational performance of the device, use good PCB layout practices, including:
• Noise can propagate into analog circuitry through the power pins of the circuit as a whole, as well as the
operational amplifier. Bypass capacitors are used to reduce the coupled noise by providing low-impedance
power sources local to the analog circuitry.
– Connect low-ESR, 0.1-µF ceramic bypass capacitors between each supply pin and ground, placed as
close to the device as possible. A single bypass capacitor from V+ to ground is applicable for singlesupply applications.
• Separate grounding for analog and digital portions of circuitry is one of the simplest and most-effective
methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to ground planes.
A ground plane helps distribute heat and reduces EMI noise pickup. Make sure to physically separate digital
and analog grounds, paying attention to the flow of the ground current.
• To reduce parasitic coupling, run the input traces as far away from the supply or output traces as possible. If
it is not possible to keep them separate, it is much better to cross the sensitive trace perpendicular as
opposed to in parallel with the noisy trace. [Things in parallel never cross, by definition]
• Place the external components as close to the device as possible. Keeping RF and RG close to the inverting
input minimizes parasitic capacitance, as shown in Layout Examples.
• Keep the length of input traces as short as possible. Always remember that the input traces are the most
sensitive part of the circuit.
• Consider a driven, low-impedance guard ring around the critical traces. A guard ring can significantly reduce
leakage currents from nearby traces that are at different potentials.
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LM158, LM158A, LM258, LM258A
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12.2 Layout Examples
Place components close to
device and to each other to
reduce parasitic errors
Run the input traces as far
away from the supply lines
as possible
VS+
RF
OUT1
V+
GND
IN1í
OUT2
VIN
IN1+
IN2í
Ví
IN2+
RG
GND
R IN
Only needed for
dual-supply
operation
GND
Use low-ESR, ceramic
bypass capacitor
VSí
(or GND for single supply)
Ground (GND) plane on another layer
图 54. Operational Amplifier Board Layout for Noninverting Configuration
RIN
VIN
+
VOUT
RG
RF
图 55. Operational Amplifier Schematic for Noninverting Configuration
28
版权 © 1976–2019, Texas Instruments Incorporated
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
www.ti.com.cn
ZHCSIT6W – JUNE 1976 – REVISED OCTOBER 2019
13 器件和文档支持
13.1 文档支持
13.1.1 相关文档
• 德州仪器 (TI)，《电路板布局技巧》。
13.2 相关链接
下表列出了快速访问链接。类别包括技术文档、支持和社区资源、工具和软件，以及立即订购快速访问。
表 1. 相关链接
器件
产品文件夹
立即订购
技术文档
工具与软件
支持和社区
LM158
单击此处
单击此处
单击此处
单击此处
单击此处
LM158A
单击此处
单击此处
单击此处
单击此处
单击此处
LM258
单击此处
单击此处
单击此处
单击此处
单击此处
LM258A
单击此处
单击此处
单击此处
单击此处
单击此处
LM358
单击此处
单击此处
单击此处
单击此处
单击此处
LM358A
单击此处
单击此处
单击此处
单击此处
单击此处
LM358B中为 LM358B
和 LM2904B 器件添
加了预览标识
单击此处
单击此处
单击此处
单击此处
单击此处
LM2904
单击此处
单击此处
单击此处
单击此处
单击此处
LM2904B
单击此处
单击此处
单击此处
单击此处
单击此处
LM2904V
单击此处
单击此处
单击此处
单击此处
单击此处
13.3 接收文档更新通知
要接收文档更新通知，请导航至 ti.com. 上的器件产品文件夹。单击右上角的通知我进行注册，即可每周接收产品
信息更改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。
13.4 社区资源
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
13.5 商标
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
13.6 静电放电警告
ESD 可能会损坏该集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理措施和安装程序 , 可
能会损坏集成电路。
ESD 的损坏小至导致微小的性能降级 , 大至整个器件故障。 精密的集成电路可能更容易受到损坏 , 这是因为非常细微的参数更改都可
能会导致器件与其发布的规格不相符。
13.7 术语表
SLYZ022 - TI 术语表。
本术语表列出并解释了术语、首字母缩略词和定义。
版权 © 1976–2019, Texas Instruments Incorporated
29
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
ZHCSIT6W – JUNE 1976 – REVISED OCTOBER 2019
www.ti.com.cn
14 机械、封装和可订购信息
以下页中包括机械、封装和可订购信息。这些信息是针对指定器件可提供的最新数据。数据如有变更，恕不另行通
知和修订此文档。如需获取此数据表的浏览器版本，请查看左侧的导航面板。
30
版权 © 1976–2019, Texas Instruments Incorporated
PACKAGE OPTION ADDENDUM
www.ti.com
7-Aug-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
5962-87710012A
ACTIVE
LCCC
FK
20
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
596287710012A
LM158FKB
5962-8771001PA
ACTIVE
CDIP
JG
8
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
8771001PA
LM158
5962-87710022A
ACTIVE
LCCC
FK
20
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
596287710022A
LM158AFKB
5962-8771002PA
ACTIVE
CDIP
JG
8
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
8771002PA
LM158A
LM158 MW8
ACTIVE
WAFERSALE
YS
0
1
RoHS & Green
Call TI
Level-1-NA-UNLIM
-55 to 125
LM158AFKB
ACTIVE
LCCC
FK
20
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
596287710022A
LM158AFKB
LM158AJG
ACTIVE
CDIP
JG
8
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
LM158AJG
LM158AJGB
ACTIVE
CDIP
JG
8
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
8771002PA
LM158A
LM158FKB
ACTIVE
LCCC
FK
20
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
596287710012A
LM158FKB
LM158JG
ACTIVE
CDIP
JG
8
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
LM158JG
LM158JGB
ACTIVE
CDIP
JG
8
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
8771001PA
LM158
LM258AD
LIFEBUY
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-25 to 85
LM258A
LM258ADGKR
ACTIVE
VSSOP
DGK
8
2500
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-25 to 85
(M3L, M3P, M3S, M3
U)
LM258ADR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-25 to 85
LM258A
LM258ADRE4
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-25 to 85
LM258A
LM258ADRG4
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-25 to 85
LM258A
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
7-Aug-2021
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
LM258AP
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU | SN
N / A for Pkg Type
-25 to 85
LM258AP
LM258APE4
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
-25 to 85
LM258AP
LM258D
LIFEBUY
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-25 to 85
LM258
LM258DG4
LIFEBUY
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-25 to 85
LM258
LM258DGKR
ACTIVE
VSSOP
DGK
8
2500
Level-1-260C-UNLIM
-25 to 85
(M2L, M2P, M2S, M2
U)
LM258DGKRG4
LIFEBUY
VSSOP
DGK
8
2500
TBD
Call TI
Call TI
-25 to 85
LM258DR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-25 to 85
LM258
LM258DRG3
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-25 to 85
LM258
LM258DRG4
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-25 to 85
LM258
LM258P
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU | SN
N / A for Pkg Type
-25 to 85
LM258P
LM258PE4
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
-25 to 85
LM258P
LM2904AVQDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904AV
LM2904AVQDRG4
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904AV
LM2904AVQPWR
ACTIVE
TSSOP
PW
8
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904AV
LM2904AVQPWRG4
ACTIVE
TSSOP
PW
8
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904AV
LM2904BAIDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2904BA
LM2904BIDGKR
ACTIVE
VSSOP
DGK
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
28BB
LM2904BIDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
L2904B
LM2904BIPWR
ACTIVE
TSSOP
PW
8
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904B
RoHS & Green NIPDAU | NIPDAUAG
LM2904D
LIFEBUY
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
LM2904
LM2904DE4
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
LM2904
LM2904DG4
LIFEBUY
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
LM2904
Addendum-Page 2
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
7-Aug-2021
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
LM2904DGKR
ACTIVE
VSSOP
DGK
8
2500
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
(MBL, MBP, MBS, MB
U)
LM2904DGKRG4
LIFEBUY
VSSOP
DGK
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
(MBL, MBP, MBS, MB
U)
LM2904DR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
LM2904
LM2904DRE4
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
LM2904
LM2904DRG3
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
LM2904
LM2904DRG4
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
LM2904
LM2904P
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU | SN
N / A for Pkg Type
-40 to 125
LM2904P
LM2904PE4
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
-40 to 125
LM2904P
LM2904PSR
ACTIVE
SO
PS
8
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904
LM2904PW
ACTIVE
TSSOP
PW
8
150
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904
LM2904PWR
ACTIVE
TSSOP
PW
8
2000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
L2904
LM2904PWRG3
ACTIVE
TSSOP
PW
8
2000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
L2904
LM2904PWRG4
ACTIVE
TSSOP
PW
8
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904
LM2904PWRG4-JF
ACTIVE
TSSOP
PW
8
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904
LM2904QDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2904Q1
LM2904QDRG4
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2904Q1
LM2904VQDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904V
LM2904VQDRG4
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904V
LM2904VQPWR
ACTIVE
TSSOP
PW
8
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904V
LM2904VQPWRG4
ACTIVE
TSSOP
PW
8
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904V
LM358AD
LIFEBUY
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
LM358A
Addendum-Page 3
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
7-Aug-2021
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
LM358A
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
LM358A
Level-1-260C-UNLIM
0 to 70
(M6L, M6P, M6S, M6
U)
(3)
(4/5)
(6)
LM358ADE4
ACTIVE
SOIC
D
8
LM358ADG4
LIFEBUY
SOIC
D
8
75
LM358ADGKR
ACTIVE
VSSOP
DGK
8
2500
LM358ADGKRG4
LIFEBUY
VSSOP
DGK
8
2500
TBD
Call TI
Call TI
0 to 70
LM358ADR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
0 to 70
LM358A
LM358ADRG4
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
LM358A
LM358AP
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU | SN
N / A for Pkg Type
0 to 70
LM358AP
LM358APE4
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
0 to 70
LM358AP
LM358APW
ACTIVE
TSSOP
PW
8
150
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
L358A
LM358APWR
ACTIVE
TSSOP
PW
8
2000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
0 to 70
L358A
LM358APWRG4
ACTIVE
TSSOP
PW
8
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
L358A
LM358BAIDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
L358BA
LM358BIDGKR
ACTIVE
VSSOP
DGK
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
358B
LM358BIDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
LM358B
LM358BIPWR
ACTIVE
TSSOP
PW
8
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
LM358B
LM358D
LIFEBUY
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
LM358
LM358D-JF
LIFEBUY
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
LM358
LM358DG4
LIFEBUY
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
LM358
LM358DGKR
ACTIVE
VSSOP
DGK
8
2500
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
0 to 70
(M5L, M5P, M5S, M5
U)
LM358DGKRG4
LIFEBUY
VSSOP
DGK
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
(M5L, M5P, M5S, M5
U)
LM358DR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
0 to 70
LM358
LM358DRE4
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
LM358
RoHS & Green NIPDAU | NIPDAUAG
Addendum-Page 4
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
7-Aug-2021
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
LM358DRG3
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
0 to 70
LM358
LM358DRG4
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
LM358
LM358P
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU | SN
N / A for Pkg Type
0 to 70
LM358P
LM358PE3
ACTIVE
PDIP
P
8
50
RoHS &
Non-Green
SN
N / A for Pkg Type
0 to 70
LM358P
LM358PE4
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
0 to 70
LM358P
LM358PSR
ACTIVE
SO
PS
8
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
L358
LM358PW
ACTIVE
TSSOP
PW
8
150
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
L358
LM358PWR
ACTIVE
TSSOP
PW
8
2000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
0 to 70
L358
LM358PWRG3
ACTIVE
TSSOP
PW
8
2000
RoHS & Green
SN
Level-1-260C-UNLIM
0 to 70
L358
LM358PWRG4
ACTIVE
TSSOP
PW
8
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
L358
LM358PWRG4-JF
ACTIVE
TSSOP
PW
8
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
L358
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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