LM3150-250EVAL/NOPB

User's Guide SNVA371D – September 2008 – Revised May 2013 AN-1900 LM3150 Evaluation Boards 1 Introduction The LM3150 evaluation boards are designed to provide the design engineer with a fully functional power converter based on Constant On-Time with Emulated Ripple mode control to evaluate the LM3150 and the entire LM315x family of parts. The evaluation board is pre-configured to use the LM3150 with the output voltage pre-set to 3.3V, with a typical max load current of 10A. There are three different boards that are configured for 250 kHz, 500 kHz, and 750 kHz respectively. The printed circuit board consists of 4 layers of FR4 material with the top and bottom layers using 2 ounce copper and the inner layers using 1 ounce copper. The board size is 2.9” × 2.9”. The evaluation board allows for a variety of configurations, and this multifunctional capability is used to also accept the fixed output versions of the LM3150 such as the LM3151-3.3, LM3152-3.3, and the LM3153-3.3. The performance of the synchronous rectifier buck evaluation boards are as follows: • Switching Frequency: 250 kHz – Input Range: 6V to 36V – Output Voltage: 3.3V – Output Current: 0 to 10A • Switching Frequency: 500 kHz – Input Range: 6V to 24V – Output Voltage: 3.3V – Output Current: 0 to 10A • Switching Frequency: 750 kHz – Input Range: 8V to 17V – Output Voltage: 3.3V – Output Current: 0 to 10A All trademarks are the property of their respective owners. SNVA371D – September 2008 – Revised May 2013 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated AN-1900 LM3150 Evaluation Boards 1 Evaluation Board Schematic 2 www.ti.com Evaluation Board Schematic VIN VCC EN CVCC CEN VIN VIN M1 HG RON CBYP RON CIN BST LM3150 CBST L SS SW CSS VOUT COUT ILIM FB RLIM SGND LG M2 CFF RFB2 PGND RFB1 Figure 1. Evaluation Board Schematic 3 Powering and Loading Considerations Read this entire section prior to attempting to power the evaluation board. 3.1 Quick Setup Procedure Step 1: Set the input power supply current limit to 10A. Turn off the input power supply. Connect the power supply to the VIN terminals. Step 2: Connect the load, with up to 10A capability, to the VO terminals. Positive connection to VO and the negative connection to GND. Step 3: The EN pin should be left open for normal operation. Step 4: Set the input source voltage to 12V and the load to 0.1A. The load voltage should be in regulation with a nominal 3.3V output. Step 5: Slowly increase the load current while monitoring the load voltage at the VO and GND terminals. It should remain in regulation with a nominal 3.3V output as the load is increased up to 10A. Step 6: Slowly sweep the input source voltage over the operating voltage range corresponding to selected evaluation board as indicated in the introduction section. The load voltage should remain in regulation with a nominal 3.3V output. Step 7: The shutdown function can be verified by applying 0V to the EN pin. 2 AN-1900 LM3150 Evaluation Boards SNVA371D – September 2008 – Revised May 2013 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated Powering and Loading Considerations www.ti.com 3.2 Testing the Fixed Version Parts The fixed output versions can also be mounted on the LM3150 evaluation boards with few modifications to the default configuration as indicated below. This is achievable because pins 7 and 8 are not internally connected on the fixed version parts. 1. Replace U1, LM3150, with a fixed version part such as the LM3152 2. Short Rfb2 3. Remove Rfb1 4. Remove Cff Ensure that the remaining components on the evaluation board will meet your design specifications by using the provided circuit calculator tools. 3.3 Alternate Ripple Injection Certain designs may benefit from another ripple injection technique that utilizes a resistor and capacitor to integrate the voltage across the inductor and then couple that signal through a capacitor to the FB pin. This technique is commonly found in COT controllers and may benefit designs that have high output voltage such as 12V and a low-side FET that has a low RDSON and require low output voltage ripple. The evaluation board allows for this configuration allowing the placement of Rr, Cr, and Cac. After the proper components for Rr, Cr, and Cac have been chosen mount them on the evaluation board and remove Cff. A quick efficiency check is the best way to confirm that everything is operating properly. If something is amiss you can be reasonably sure that it will affect the efficiency adversely. Few parameters can be incorrect in a switching power supply without creating losses and potentially damaging heat. 3.4 Improving Efficiency It is also well known that efficiency may be improved slightly by placing a Schottky diode across the lowside FET. The Schottky diode has a much lower forward voltage drop than the internal diode of the FET and a faster turn-on time. This evaluation board allows for a Schottky diode to be placed on footprint D1. The internal VCC regulator provides a supply voltage to both the high-side and low-side FET drivers. The high-side FET driver receives it’s supply voltage through a internal diode that has a forward voltage drop as high as 1V. This may impact the drivers ability to turn on the high-side FET fully and therefore cause a loss in efficiency depending upon which FET is chosen. The footprint Dbst allows for placement of a Schottky diode that will have a much smaller forward drop and therefore increase the driver supply voltage and allow for improved efficiency for certain FETs. 3.5 Output Voltage Ripple Measurement The output voltage ripple measurement is usually taken directly across the output capacitors utilizing extremely short scope probe leads. To help make this measurement slightly easier, a footprint Cf has been included that will allow for a 1 µF or less 0805 or 1206 capacitor to be mounted directly across the output voltage terminals that will allow for approximate measurement of the ripple voltage. SNVA371D – September 2008 – Revised May 2013 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated AN-1900 LM3150 Evaluation Boards 3 Performance Characteristics 4 www.ti.com Performance Characteristics 250 kHz Efficiency vs Load 500 kHz Efficiency vs Load Figure . Figure 2. Figure . Figure 3. 500 kHz Full Load Transient 500 kHz Partial Load Transient Figure . Figure 4. Figure . Figure 5. 750 kHz Efficiency vs Load Figure . Figure 6. 4 AN-1900 LM3150 Evaluation Boards SNVA371D – September 2008 – Revised May 2013 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated Bill of Materials www.ti.com 5 Bill of Materials Table 1. 250 kHz Bill of Materials Designator Qty Part Number Description Value Vendor U1 1 LM3150 Simple Switcher Controller LM3150 Texas Instruments Cbst 1 C2012X7R1C474K Ceramic, X7R, 16V, 10% 0.47 µF TDK Cbyp 1 C2012X7R1H104K Ceramic, X7R, 50V, 10% 0.100 µF TDK Cen 1 C1608X7R1H102K Ceramic, X7R, 50V, 10% 1000 pF TDK Cff 1 VJ0805Y561KXACW1BC Ceramic, X7R, 50V, 10% 560 pF Vishay Cin1, Cin2 2 50HVH56M Aluminum Electrolytic, 50V, 20% 56 µF Sanyo Cin3 1 GRM31MR71H474KA01L Ceramic, X7R, 50V 10% 0.47µF Murata Co1, Co2 2 PCF0J221MCL1GS Polymer Aluminum, 6.3V, 20% 220 µF Nichicon Css 1 VJ0805Y683KXXA Ceramic, 0805, 25V, 10% 0.068 µF Vishay Cvcc 1 GRM21BR71C475KA73L Ceramic, X7R, 16V, 10% 4.7 µF Murata EN 1 5002 Terminal, Single Pin White Keystone L1 1 SER2013-362ML Shielded Drum Core, 1.82 mΩ 3.6 µH Coilcraft M1 1 SI7850DP NFET, RDS(ON) @4.5V=25 mΩ 60V Vishay M2 1 SI7478DP NFET, RDS(ON) @4.5V=8.8 mΩ 60V Vishay PGND, PGND, Vin, Vo 4 1598-2 Turret Terminal Triple Keystone Rfb1 1 CRCW08054K99FKEA 1%, 0.125W 4.99 kΩ Vishay Rfb2 1 CRCW080522K6FKEA 1%, 0.125W 22.6 kΩ Vishay Rlim 1 CRCW08051K40FKEA 1%, 0.125W 1.40 kΩ Vishay Ron 1 CRCW0805115KFKEA 1%, 0.125W 115 kΩ Vishay SW 1 5015 Surface Mount Test Point Rr, Cr, Cin3, Cac, Dbst, D1 Keystone Not Installed, See Text SNVA371D – September 2008 – Revised May 2013 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated AN-1900 LM3150 Evaluation Boards 5 Bill of Materials www.ti.com Table 2. 500 kHz Bill of Materials Designator Qty Part Number Description Value Vendor U1 1 LM3150 Simple Switcher Controller LM3150 Texas Instruments Cbst 1 C2012X7R1C474K Ceramic, X7R, 16V, 10% 0.47 µF TDK Cbyp 1 C2012X7R1H104K Ceramic, X7R, 50V, 10% 0.100 µF TDK Cen 1 C1608X7R1H102K Ceramic, X7R, 50V, 10% 1000 pF TDK Cff 1 VJ0805A271JXACW1BC Ceramic, X7R, 50V, 10% 270 pF Vishay Cin1 1 EEVFK1J101P Aluminum Electrolytic, , 63V, 20% 100 µF Panasonic Cin2, Cin3 2 GMK325BJ106KN-T Ceramic, X7R, 50V, 20% 10 µF Taiyo Yuden Co1, Co2 2 EEF-UE0J151R Polymer Aluminum, 6.3V, 20% 150 µF Panasonic Css 1 VJ0805Y683KXXA Ceramic, 0805, 25V, 10% 0.068 µF Vishay Cvcc 1 GRM21BR71C475KA73L Ceramic, X7R, 16V, 10% 4.7 µF Murata EN 1 5002 Terminal, Single Pin White Keystone L1 1 MVR1271C-162ML Shielded Drum Core, 2.53 mΩ 1.65 µH Coilcraft M1,M2 2 RJK0305DPB NFET, RDS(ON) @4.5V=10 mΩ 30V Renesas PGND, PGND, Vin, Vo 4 1598-2 Turret Terminal Triple Keystone Rfb1 1 CRCW08054K99FKEA 1%, 0.125W 4.99 kΩ Vishay Rfb2 1 CRCW080522K6FKEA 1%, 0.125W 22.6 kΩ Vishay Rlim 1 CRCW08051K91FKEA 1%, 0.125W 1.91 kΩ Vishay Ron 1 CRCW080556K2FKEA 1%, 0.125W 56.2 kΩ Vishay SW 1 5015 Surface Mount Test Point Rr, Cr, Cac, Dbst, D1 Keystone Not Installed, See Text Table 3. 750 kHz Bill of Materials Designator Qty Part Number Description Value Vendor U1 1 LM3150 Simple Switcher Controller LM3150 Texas Instruments Cbst 1 C2012X7R1C474K Ceramic, X7R, 16V, 10% 0.47 µF TDK Cbyp 1 C2012X7R1H104K Ceramic, X7R, 50V, 10% 0.100 µF TDK Cen 1 C1608X7R1H102K Ceramic, X7R, 50V, 10% 1000 pF TDK Cff 1 CC0805JRNP09BN151 Ceramic, NP0, 50V, 5% 150 pF Yageo Cin1 1 EEE-FK1V151P Aluminum Electrolytic, 63V, 20% 150 µF Panasonic Cin2, Cin3 2 GMK325BJ106KN-T Ceramic, X7R, 50V, 20% 10 µF Taiyo Yuden Co1, Co2 2 EEF-UE0J151R Polymer Aluminum, 6.3V, 20% 150 µF Panasonic Css 1 VJ0805Y683KXXA Ceramic, 0805, 25V, 10% 0.068 µF Vishay Cvcc 1 GRM21BR71C475KA73L Ceramic, X7R, 16V, 10% 4.7 µF Murata EN 1 5002 Terminal, Single Pin White Keystone L1 1 XPL7030-102ML Shielded Drum Core, 1.9 mΩ 1 µH Coilcraft M1 1 RJK0305DPB NFET, RDS(ON) @4.5V=10 mΩ 30V Renesas M2 1 RJK0329DPB NFET, RDS(ON) @4.5V=2.4 mΩ 30V Renesas PGND, PGND, Vin, Vo 4 1598-2 Turret Terminal Triple Keystone Rfb1 1 CRCW08054K99FKEA 1%, 0.125W 4.99 kΩ Vishay Rfb2 1 CRCW080522K6FKEA 1%, 0.125W 22.6 kΩ Vishay Rlim 1 CRCW08051K91FKEA 1%, 0.125W 1.91 kΩ Vishay Ron 1 CRCW080556K2FKEA 1%, 0.125W 56.2 kΩ SW 1 5015 Surface Mount Test Point Rr, Cr, Cac, Dbst, D1 6 AN-1900 LM3150 Evaluation Boards Vishay Keystone Not Installed, See Text SNVA371D – September 2008 – Revised May 2013 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated PCB Layout www.ti.com 6 PCB Layout Figure 7. Top Layer Figure 8. Inner Copper 1 SNVA371D – September 2008 – Revised May 2013 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated AN-1900 LM3150 Evaluation Boards 7 PCB Layout www.ti.com Figure 9. Inner Copper 2 Figure 10. Bottom Layer Viewed from Bottom Side 8 AN-1900 LM3150 Evaluation Boards SNVA371D – September 2008 – Revised May 2013 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated Full Schematic www.ti.com 7 Full Schematic 5, 6, 7, 8 Vin 2 HG RON VCC 11 4 Cin3 Cin2 Cbyp Ron 7 GND VIN PGND 1 Dbst PGND 6 BST SS Cbst 3 SW EN Cvcc 12 Css EN M1 1, 2, 3 + Cin1 U1 LM3150 PGND L1 10 SGND LG 13 4 Co3 Cf Cac M2 Cff Rfb2 PGND GND D1 1, 2, 3 4 14 SGND FB EP SGND PGND 9 SGND Co2 Co1 8 5, 6, 7, 8 ILIM SGND Cr + 5 1 + Rr Rlim SGND Cen Vo SW Rfb1 PGND PGND FB SGND Figure 11. Full Evaluation Board Schematic SNVA371D – September 2008 – Revised May 2013 Submit Documentation Feedback AN-1900 LM3150 Evaluation Boards Copyright © 2008–2013, Texas Instruments Incorporated 9 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms and conditions of sale of semiconductor products. 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