LM158-N, LM258-N, LM2904-N, LM358-N
SNOSBT3J – JANUARY 2000 – REVISED MARCH 2022
LMx58-N Low-Power, Dual-Operational Amplifiers
1 Features
3 Description
•
The LM158 series consists of two independent, high
gain, internally frequency compensated operational
amplifiers which were designed specifically to operate
from a single power supply over a wide range of
voltages. Operation from split power supplies is also
possible and the low power supply current drain is
independent of the magnitude of the power supply
voltage.
•
•
•
•
•
•
•
•
•
•
•
Available in 8-bump DSBGA chip-sized package
(see AN-1112, SNVA009)
Internally frequency compensated for unity gain
Large DC voltage gain: 100 dB
Wide bandwidth (unity gain): 1 MHz (temperature
compensated)
Wide power supply range:
– Single supply: 3 V to 32 V
– Or dual supplies: ±1.5 V to ±16 V
Very low supply current drain (500 μA) essentially
independent of supply voltage
Low input offset voltage: 2 mV
Input common-mode voltage range includes
ground
Differential input voltage range equal to the power
supply voltage
Large output voltage swing
Unique characteristics:
– In the Linear Mode the input common-mode
voltage range includes ground and the output
voltage can also swing to ground, even though
operated from only a single power supply
voltage
– The unity gain cross frequency is temperature
compensated
– The input bias current is also temperature
compensated
Advantages:
– Two internally compensated op amps
– Eliminates need for dual supplies
– Allows direct sensing near GND and VOUT also
goes to GND
– Compatible with all forms of logic
– Power drain suitable for battery operation
Application areas include transducer amplifiers, DC
gain blocks and all the conventional op-amp circuits
which now can be more easily implemented in single
power supply systems. For example, the LM158
series can be directly operated off of the standard
3.3-V power supply voltage which is used in digital
systems and will easily provide the required interface
electronics without requiring the additional ±15-V
power supplies.
The LM358 and LM2904 are available in a chipsized package (8-bump DSBGA) using TI's DSBGA
package technology.
Device Information
PART NUMBER(1)
LM158-N
LM258-N
LM2904-N
LM358-N
2 Applications
•
•
•
Active filters
General signal conditioning and amplification
4-mA to 20-mA current loop transmitters
(1)
PACKAGE
BODY SIZE (NOM)
TO-CAN (8)
9.08 mm × 9.09 mm
CDIP (8)
10.16 mm × 6.502 mm
TO-CAN (8)
9.08 mm × 9.09 mm
DSBGA (8)
1.31 mm × 1.31 mm
SOIC (8)
4.90 mm × 3.91 mm
PDIP (8)
9.81 mm × 6.35 mm
TO-CAN (8)
9.08 mm × 9.09 mm
DSBGA (8)
1.31 mm × 1.31 mm
SOIC (8)
4.90 mm × 3.91 mm
PDIP (8)
9.81 mm × 6.35 mm
For all available packages, see the orderable addendum at
the end of the data sheet.
Voltage Controlled Oscillator (VCO)
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM158-N, LM258-N, LM2904-N, LM358-N
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SNOSBT3J – JANUARY 2000 – REVISED MARCH 2022
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings........................................ 4
6.2 ESD Ratings............................................................... 4
6.3 Recommended Operating Conditions.........................5
6.4 Thermal Information....................................................5
6.5 Electrical Characteristics: LM158A, LM358A,
LM158, LM258.............................................................. 5
6.6 Electrical Characteristics: LM358, LM2904.................7
6.7 Typical Characteristics................................................ 9
7 Detailed Description......................................................12
7.1 Overview................................................................... 12
7.2 Functional Block Diagram......................................... 12
7.3 Feature Description...................................................12
7.4 Device Functional Modes..........................................13
8 Application and Implementation.................................. 14
8.1 Application Information............................................. 14
8.2 Typical Applications.................................................. 14
9 Power Supply Recommendations................................21
10 Layout...........................................................................21
10.1 Layout Guidelines................................................... 21
10.2 Layout Example...................................................... 21
11 Device and Documentation Support..........................22
11.1 Receiving Notification of Documentation Updates.. 22
11.2 Support Resources................................................. 22
11.3 Trademarks............................................................. 22
11.4 Electrostatic Discharge Caution.............................. 22
11.5 Glossary.................................................................. 22
12 Mechanical, Packaging, and Orderable
Information.................................................................... 22
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision I (December 2014) to Revision J (March 2022)
Page
• Updated the numbering format for tables, figures, and cross-references throughout the document..................1
• Corrected pin 5 (+INB) and pin 7 (OUTB) description information in the Pin Configuration and Functions
section................................................................................................................................................................ 3
• Deleted Related Links from the Device and Documentation Support section.................................................. 22
Changes from Revision H (March 2013) to Revision I (December 2014)
Page
• Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device
Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout
section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information
section ............................................................................................................................................................... 1
Changes from Revision G (March 2013) to Revision H (March 2013)
Page
• Changed layout of National Data Sheet to TI format.......................................................................................... 1
2
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5 Pin Configuration and Functions
Figure 5-2. LMC Package 8-Pin TO-99 Top View
Figure 5-1. D, P, and NAB Package 8-Pin SOIC,
PDIP, and CDIP (Top View)
Figure 5-3. YPB Package 8-Pin DSBGA Top View
Table 5-1. Pin Functions
PIN
TYPE(1)
DESCRIPTION
NAME
D/P/LMC
YPB
OUTA
1
A1
O
Output, channel A
–INA
2
B1
I
Inverting input, channel A
+INA
3
C1
I
Non-inverting input, channel A
GND /
V–
4
C2
P
Ground for single-supply configurations. Negative supply for dual-supply configurations.
+INB
5
C3
I
Non-inverting input, channel B
–INB
6
B3
I
Inverting input, channel B
OUTB
7
A3
O
Output, channel B
V+
8
A2
P
Positive supply
(1)
Signal Types: I = Input, O = Output, I/O = Input or Output, P = Power
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6 Specifications
6.1 Absolute Maximum Ratings
See (1) (2) (3).
LM158, LM258,
LM358, LM158A,
LM258A, LM358A
MIN
Supply Voltage, V+
−0.3
PDIP
(P)
Output Short-Circuit
to GND (One
Amplifier)(5)
550
SOIC (D)
530
DSBGA (YPB)
435
V+
≤ 15 V and TA = 25°C
Temperature
−55
(2)
(3)
(4)
(5)
(6)
26
V
26
V
26
V
830
mW
mW
530
mW
mW
Continuous
Continuous
50
50
125
mA
°C
PDIP Package (P): Soldering (10 seconds)
260
260
°C
SOIC Package (D)
Vapor Phase (60
seconds)
215
215
°C
Infrared (15 seconds)
220
220
°C
PDIP (P): (Soldering, 10 seconds)
260
260
°C
TO-99 (LMC): (Soldering, 10 seconds)
300
300
°C
150
°C
Storage temperature, Tstg
(1)
−0.3
830
TO-99 (LMC)
Input Current (VIN < −0.3V)(6)
Lead Temperature
32
UNIT
MAX
32
Input Voltage
Power
MIN
32
Differential Input Voltage
Dissipation(4)
MAX
LM2904
−65
150
−65
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended Operating Conditions
indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured
specifications and the test conditions, see the Electrical Characteristics.
Refer to RETS158AX for LM158A military specifications and to RETS158X for LM158 military specifications.
If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
For operating at high temperatures, the LM358/LM358A, LM2904 must be derated based on a 125°C maximum junction temperature
and a thermal resistance of 120°C/W for PDIP, 182°C/W for TO-99, 189°C/W for SOIC package, and 230°C/W for DSBGA, which
applies for the device soldered in a printed circuit board, operating in a still air ambient. The LM258/LM258A and LM158/LM158A can
be derated based on a +150°C maximum junction temperature. The dissipation is the total of both amplifiers—use external resistors,
where possible, to allow the amplifier to saturate or to reduce the power which is dissipated in the integrated circuit.
Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground,
the maximum output current is approximately 40 mA independent of the magnitude of V+. At values of supply voltage in excess of +15
V, continuous short-circuits can exceed the power dissipation ratings and cause eventual destruction. Destructive dissipation can result
from simultaneous shorts on all amplifiers.
This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction
of the input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there
is also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the op amps to go
to the V+voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. This is not destructive
and normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than −0.3 V (at
25°C).
6.2 ESD Ratings
V(ESD)
(1)
4
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
VALUE
UNIT
±250
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
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6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
Supply Voltage (V+ - V-):LM158. LM258, LM358
3 (±1.5)
32 (±16)
V
Supply Voltage (V+ - V-):LM2904
3 (±1.5)
26 (±13)
V
Operating Temperature: LM158
-55
125
°C
Operating Temperature: LM258
-25
85
°C
0
70
°C
-40
85
°C
Operating Temperature: LM358
Operating Temperature: LM2904
UNIT
6.4 Thermal Information
THERMAL METRIC(1)
LM158-N,
LM258-N,
LM358-N
LM158-N
LMC
NAB
LM2904-N, LM358-N
UNIT
YPB
D
P
189
120
8 PINS
RθJA
(1)
Junction-to-ambient thermal resistance
155
132
230
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
6.5 Electrical Characteristics: LM158A, LM358A, LM158, LM258
V+ = +5.0 V, See(2), unless otherwise stated
PARAMETER
TEST CONDITIONS
Input Offset Voltage
See(3), TA = 25°C
Input Bias Current
IIN(+) or IIN(−), TA = 25°C,
VCM = 0
LM158A
MIN
TYP
LM358A
MAX
MIN
LM158, LM258
TYP
MAX
MIN
TYP
MAX
UNIT
1
2
2
3
2
5
mV
20
50
45
100
45
150
nA
2
10
5
30
3
30
V,(4)
Input Offset Current
IIN(+) − IIN(−), VCM = 0V, TA =
25°C
Input Common-Mode
V+ = 30 V,(5)
Voltage Range
(LM2904, V+ = 26V), TA =
25°C
Supply Current
Over Full Temperature Range
V+−1.5
0
V+−1.5
0
V+−1.5
0
nA
V
RL = ∞ on All Op Amps
V+ = 30V (LM2904 V+ = 26V)
V+
= 5V
Large Signal Voltage Gain V+ = 15 V, TA = 25°C,
RL ≥ 2 kΩ, (For VO = 1 V to 11
V)
Common-Mode
TA = 25°C,
Rejection Ratio
VCM = 0 V to V+−1.5 V
Power Supply
V+ = 5 V to 30 V
Rejection Ratio
(LM2904, V+ = 5 V to 26 V),
TA = 25°C
Power Supply
V+ = 5 V to 30 V
Rejection Ratio
(LM2904, V+ = 5 V to 26 V),
TA = 25°C
Amplifier-to-Amplifier
Coupling
f = 1 kHz to 20 kHz, TA =
25°C (Input Referred), See(6)
1
2
1
2
1
2
mA
0.5
1.2
0.5
1.2
0.5
1.2
mA
50
100
25
100
50
100
V/mV
70
85
65
85
70
85
dB
65
100
65
100
65
100
dB
65
100
65
100
65
100
dB
−120
dB
−120
−120
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6.5 Electrical Characteristics: LM158A, LM358A, LM158, LM258 (continued)
V+ = +5.0 V, See(2), unless otherwise stated
PARAMETER
Output Current Source
TEST CONDITIONS
LM158A
MIN
TYP
20
LM358A
MAX
MIN
TYP
40
20
10
20
12
50
LM158, LM258
MAX
MAX
UNIT
MIN
TYP
40
20
40
mA
10
20
10
20
mA
12
50
12
50
μA
VIN + = 1 V,
VIN − = 0 V,
V+ = 15 V,
VO = 2 V, TA = 25°C
Sink
VIN − = 1 V, VIN + = 0 V
V+ = 15 V, TA = 25°C,
VO = 2 V
VIN − = 1 V,
VIN + = 0 V
TA = 25°C, VO = 200 mV,
V+ = 15 V
Short Circuit to Ground
TA = 25°C, See(1), V+ = 15 V
Input Offset Voltage
See(3)
Input Offset Voltage Drift
RS = 0Ω
Input Offset Current
IIN(+) − IIN(−)
Input Offset Current Drift
40
60
40
60
7
15
7
20
RS = 0Ω
10
200
10
300
10
Input Bias Current
IIN(+) or IIN(−)
40
Input Common-Mode
Voltage Range
V+ = 30 V, See(5) (LM2904, V+
= 26 V)
100
40
200
40
4
5
30
V+−2
0
40
7
7
75
V+−2
0
60
mV
μV/°C
100
0
mA
nA
pA/°C
300
nA
V+−2
V
Large Signal Voltage Gain V+ = +15 V
(VO = 1 V to 11 V)
25
15
25
V/mV
26
26
V
RL ≥ 2 kΩ
Output
VOH
Voltage
Swing
VOL
Output Current Source
V+ = +30 V
RL = 2
kΩ
26
(LM2904, V+ = 26 V)
RL =
10 kΩ
27
V+ = 5V, RL = 10 kΩ
+
VIN = +1 V, VIN = 0 V,
VIN − = +1 V, VIN + = 0 V,
V+ = 15 V, VO = 2 V
(1)
(2)
(3)
(4)
(5)
(6)
6
5
27
20
28
27
5
20
28
5
V
20
mV
−
V+ = 15 V, VO = 2 V
Sink
28
10
20
10
20
10
20
mA
10
15
5
8
5
8
mA
Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground,
the maximum output current is approximately 40 mA independent of the magnitude of V+. At values of supply voltage in excess of +15
V, continuous short-circuits can exceed the power dissipation ratings and cause eventual destruction. Destructive dissipation can result
from simultaneous shorts on all amplifiers.
These specifications are limited to –55°C ≤ TA ≤ +125°C for the LM158/LM158A. With the LM258/LM258A, all temperature
specifications are limited to −25°C ≤ TA ≤ 85°C, the LM358/LM358A temperature specifications are limited to 0°C ≤ TA ≤ 70°C,
and the LM2904 specifications are limited to –40°C ≤ TA ≤ 85°C.
VO ≃ 1.4 V, RS = 0 Ω with V+ from 5 V to 30 V; and over the full input common-mode range (0 V to V+ −1.5 V) at 25°C. For LM2904, V+
from 5 V to 26 V.
The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the
state of the output so no loading change exists on the input lines.
The input common-mode voltage of either input signal voltage should not be allowed to go negative by more than 0.3 V (at 25°C). The
upper end of the common-mode voltage range is V+ −1.5 V (at 25°C), but either or both inputs can go to 32 V without damage (26 V
for LM2904), independent of the magnitude of V+.
Due to proximity of external components, insure that coupling is not originating via stray capacitance between these external parts.
This typically can be detected as this type of capacitance increases at higher frequencies.
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6.6 Electrical Characteristics: LM358, LM2904
V+ = +5.0 V, See(2), unless otherwise stated
PARAMETER
LM358
TEST CONDITIONS
MIN
Input Offset Voltage
See(3) , TA = 25°C
Input Bias Current
IIN(+) or IIN(−), TA = 25°C,
VCM = 0 V, See(4)
Input Offset Current
IIN(+) − IIN(−), VCM = 0 V, TA = 25°C
Input Common-Mode
Voltage Range
V+
= 30 V,
(LM2904, V+ = 26 V), TA = 25°C
Supply Current
Over Full Temperature Range
See(5)
TYP
LM2904
MAX
MIN
TYP
UNIT
MAX
2
7
2
7
mV
45
250
45
250
nA
5
50
5
50
nA
V+−1.5
V
V+−1.5
0
0
RL = ∞ on All Op Amps
V+ = 30 V (LM2904 V+ = 26 V)
V+ = 5 V
Large Signal Voltage
V+
Gain
RL ≥ 2 kΩ, (For VO = 1 V to 11 V)
Common-Mode
Rejection Ratio
TA = 25°C,
Power Supply
Rejection Ratio
V+ = 5 V to 30 V
Amplifier-to-Amplifier Coupling
f = 1 kHz to 20 kHz, TA = 25°C
(Input Referred), See(6)
Output Current
VIN + = 1 V,
1
2
1
2
mA
0.5
1.2
0.5
1.2
mA
= 15V, TA = 25°C,
VCM = 0 V to V+−1.5 V
25
100
25
100
V/mV
65
85
50
70
dB
65
100
50
100
dB
−120
dB
(LM2904, V+ = 5 V to 26 V), TA = 25°C
Source
−120
VIN − = 0 V,
V+ = 15 V,
20
40
20
40
mA
10
20
10
20
mA
12
50
12
50
μA
VO = 2 V, TA = 25°C
Sink
VIN − = 1 V, VIN + = 0 V
V+ = 15V, TA = 25°C,
VO = 2 V
VIN − = 1 V,
VIN + = 0 V
TA = 25°C, VO = 200 mV,
V+ = 15 V
Short Circuit to Ground
TA = 25°C, See(1), V+ = 15 V
Input Offset Voltage
See(3)
Input Offset Voltage Drift
RS = 0 Ω
Input Offset Current
IIN(+) − IIN(−)
Input Offset Current Drift
RS = 0 Ω
10
Input Bias Current
IIN(+) or IIN(−)
40
Input Common-Mode
Voltage Range
V+
Large Signal Voltage Gain
V+ = +15 V
= 30 V,
40
60
40
9
7
(LM2904,
V+
= 26 V)
45
mV
μV/°C
200
10
500
V+−2
0
mA
10
7
150
See(5)
60
40
0
nA
pA/°C
500
nA
V+ −2
V
15
15
V/mV
RL = 2 kΩ
26
22
V
RL = 10 kΩ
27
(VO = 1 V to 11 V)
RL ≥ 2 kΩ
Output
VOH
Voltage
Swing
V+ = 30 V
(LM2904,
VOL
V+
= 26 V)
V+ = 5 V, RL = 10 kΩ
28
5
23
20
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24
5
V
100
mV
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6.6 Electrical Characteristics: LM358, LM2904 (continued)
V+ = +5.0 V, See(2), unless otherwise stated
PARAMETER
Output Current
TEST CONDITIONS
Source
VIN + = 1 V, VIN − = 0 V,
V+ = 15 V, VO = 2 V
Sink
VIN − = 1 V, VIN + = 0 V,
V+ = 15 V, VO = 2 V
(1)
(2)
(3)
(4)
(5)
(6)
8
LM358
MIN
TYP
10
5
LM2904
MAX
MAX
UNIT
MIN
TYP
20
10
20
mA
8
5
8
mA
Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground,
the maximum output current is approximately 40 mA independent of the magnitude of V+. At values of supply voltage in excess of +15
V, continuous short-circuits can exceed the power dissipation ratings and cause eventual destruction. Destructive dissipation can result
from simultaneous shorts on all amplifiers.
These specifications are limited to –55°C ≤ TA ≤ +125°C for the LM158/LM158A. With the LM258/LM258A, all temperature
specifications are limited to −25°C ≤ TA ≤ 85°C, the LM358/LM358A temperature specifications are limited to 0°C ≤ TA ≤ 70°C,
and the LM2904 specifications are limited to –40°C ≤ TA ≤ 85°C.
VO ≃ 1.4 V, RS = 0 Ω with V+ from 5 V to 30 V; and over the full input common-mode range (0 V to V+ −1.5 V) at 25°C. For LM2904, V+
from 5 V to 26 V.
The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the
state of the output so no loading change exists on the input lines.
The input common-mode voltage of either input signal voltage should not be allowed to go negative by more than 0.3 V (at 25°C). The
upper end of the common-mode voltage range is V+ −1.5 V (at 25°C), but either or both inputs can go to 32 V without damage (26 V
for LM2904), independent of the magnitude of V+.
Due to proximity of external components, insure that coupling is not originating via stray capacitance between these external parts.
This typically can be detected as this type of capacitance increases at higher frequencies.
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6.7 Typical Characteristics
Figure 6-1. Input Voltage Range
Figure 6-2. Input Current
Figure 6-3. Supply Current
Figure 6-4. Voltage Gain
Figure 6-5. Open Loop Frequency Response
Figure 6-6. Common-Mode Rejection Ratio
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6.7 Typical Characteristics (continued)
10
Figure 6-7. Voltage Follower Pulse Response
Figure 6-8. Voltage Follower Pulse Response (Small Signal)
Figure 6-9. Large Signal Frequency Response
Figure 6-10. Output Characteristics Current Sourcing
Figure 6-11. Output Characteristics Current Sinking
Figure 6-12. Current Limiting
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6.7 Typical Characteristics (continued)
Figure 6-13. Input Current (LM2902 Only)
Figure 6-14. Voltage Gain (LM2902 Only)
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7 Detailed Description
7.1 Overview
The LM158 series are operational amplifiers which can operate with only a single power supply voltage, have
true-differential inputs, and remain in the linear mode with an input common-mode voltage of 0 VDC. These
amplifiers operate over a wide range of power supply voltage with little change in performance characteristics. At
25°C amplifier operation is possible down to a minimum supply voltage of 2.3 VDC.
Large differential input voltages can be easily accommodated and, as input differential voltage protection diodes
are not needed, no large input currents result from large differential input voltages. The differential input voltage
may be larger than V+ without damaging the device. Protection should be provided to prevent the input voltages
from going negative more than −0.3 VDC (at 25°C). An input clamp diode with a resistor to the IC input terminal
can be used.
7.2 Functional Block Diagram
V
IN –
IN +
+
_
OUT
+
V
–
Copyright © 2016,
Texas Instruments Incorporated
Figure 7-1. (Each Amplifier)
7.3 Feature Description
The amplifier's differential inputs consist of a non-inverting input (+IN) and an inverting input (–IN). The amplifer
amplifies only the difference in voltage between the two inpus, which is called the differential input voltage. The
output voltage of the op-amp Vout is given by Equation 1:
VOUT = AOL (IN+ - IN-)
(1)
where
•
AOL is the open-loop gain of the amplifier, typically around 100dB (100,000x, or 10uV per Volt).
To reduce the power supply current drain, the amplifiers have a class A output stage for small signal levels
which converts to class B in a large signal mode. This allows the amplifiers to both source and sink large output
currents. Therefore both NPN and PNP external current boost transistors can be used to extend the power
capability of the basic amplifiers. The output voltage needs to raise approximately 1 diode drop above ground to
bias the on-chip vertical PNP transistor for output current sinking applications.
For ac applications, where the load is capacitively coupled to the output of the amplifier, a resistor should be
used, from the output of the amplifier to ground to increase the class A bias current and prevent crossover
distortion. Where the load is directly coupled, as in dc applications, there is no crossover distortion.
Capacitive loads which are applied directly to the output of the amplifier reduce the loop stability margin. Values
of 50 pF can be accommodated using the worst-case non-inverting unity gain connection. Large closed loop
gains or resistive isolation should be used if larger load capacitance must be driven by the amplifier.
The bias network of the LM158 establishes a drain current which is independent of the magnitude of the power
supply voltage over the range of 3 VDC to 30 VDC.
Output short circuits either to ground or to the positive power supply should be of short time duration. Units can
be destroyed, not as a result of the short circuit current causing metal fusing, but rather due to the large increase
in IC chip power dissipation which will cause eventual failure due to excessive junction temperatures. Putting
12
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direct short-circuits on more than one amplifier at a time will increase the total IC power dissipation to destructive
levels, if not properly protected with external dissipation limiting resistors in series with the output leads of the
amplifiers. The larger value of output source current which is available at 25°C provides a larger output current
capability at elevated temperatures (see Typical Characteristics) than a standard IC op amp.
7.4 Device Functional Modes
Figure 7-2. Schematic Diagram
The circuits presented in the Typical Single-Supply Applications emphasize operation on only a single power
supply voltage. If complementary power supplies are available, all of the standard op-amp circuits can be used.
In general, introducing a pseudo-ground (a bias voltage reference of V+/2) will allow operation above and below
this value in single power supply systems. Many application circuits are shown which take advantage of the wide
input common-mode voltage range which includes ground. In most cases, input biasing is not required and input
voltages which range to ground can easily be accommodated.
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8 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification, and
TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes. Customers should validate and test their design
implementation to confirm system functionality.
8.1 Application Information
The LM158 family bring performance, economy, and ease-of-use to a wide variety of op-amp applications.
8.2 Typical Applications
8.2.1 Noninverting DC Gain
Figure 8-1 shows a high input impedance non-inverting circuit. This circuit gives a closed-loop gain equal to
the ratio of the sum of R1 and R2 to R1 and a closed-loop 3 dB bandwidth equal to the amplifier unity-gain
frequency divided by the closed-loop gain. This design has the benefit of a very high input impedance, which
is equal to the differential input impedance multiplied by loop gain. (Open loop gain/Closed loop gain.) In DC
coupled applications, input impedance is not as important as input current and its voltage drop across the source
resistance. Note that the amplifier output will go into saturation if the input is allowed to float. This may be
important if the amplifier must be switched from source to source.
*R not needed due to temperature independent IIN
Figure 8-1. Non-Inverting DC Gain (0-V Output)
8.2.1.1 Design Requirements
For this example application, the supply voltage is +5V, and 100x±5% of noninverting gain is necessary. Signal
input impedance is approx 10kΩ.
8.2.1.2 Detailed Design Procedure
Using the equation for a non-inverting amplifier configuration ; G = 1+ R2/R1, set R1 to 10kΩ, and R2 to 99x the
value of R1, which would be 990kΩ. Replacing the 990kΩ with a 1MΩ will result in a gain of 101, which is within
the desired gain tolerance.
The gain-frequency characteristic of the amplifier and its feedback network must be such that oscillation does
not occur. To meet this condition, the phase shift through amplifier and feedback network must never exceed
180° for any frequency where the gain of the amplifier and its feedback network is greater than unity. In practical
applications, the phase shift should not approach 180° since this is the situation of conditional stability. Obviously
the most critical case occurs when the attenuation of the feedback network is zero.
14
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8.2.1.3 Application Curve
Figure 8-2. Transfer Curve for Non-Inverting Configuration
8.2.2 System Examples
8.2.2.1 Typical Single-Supply Applications
(V+ = 5.0 VDC)
Where: VO = V1 + V2 − V3 − V4
(V1 + V2) ≥ (V3 + V4) to keep VO > 0 VDC
Figure 8-3. DC Summing Amplifier
(VIN'S ≥ 0 VDC and VO ≥ 0 VDC)
VO = 0 VDC for VIN = 0 VDC
AV = 10
Figure 8-4. Power Amplifier
Figure 8-6. Lamp Driver
fo = 1 kHz
Q = 50
Av = 100 (40 dB)
Figure 8-5. “BI-QUAD” RC Active Bandpass Filter
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Figure 8-7. LED Driver
Figure 8-8. Driving TTL
VO = VIN
Figure 8-9. Voltage Follower
Figure 8-10. Pulse Generator
Figure 8-11. Squarewave Oscillator
Figure 8-12. Pulse Generator
16
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HIGH ZIN
LOW ZOUT
Figure 8-13. Low Drift Peak Detector
IO = 1 amp/volt VIN
(Increase RE for IO small)
Figure 8-14. High Compliance Current Sink
Figure 8-15. Comparator with Hysteresis
*WIDE CONTROL VOLTAGE RANGE: 0 VDC ≤ VC ≤ 2 (V+
−1.5VDC)
Figure 8-16. Voltage Controlled Oscillator (VCO)
Figure 8-17. Ground Referencing a Differential
Input Signal
fo = 1 kHz
Q=1
AV = 2
Figure 8-18. DC Coupled Low-Pass RC Active Filter
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fo = 1 kHz
Q = 25
Figure 8-19. Bandpass Active Filter
Figure 8-20. Photo Voltaic-Cell Amplifier
Figure 8-21. Using Symmetrical Amplifiers to Reduce Input Current (General Concept)
Figure 8-22. Fixed Current Sources
18
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*(Increase R1 for IL small)
VL ≤ V+ −2V
Figure 8-23. Current Monitor
Figure 8-24. AC Coupled Inverting Amplifier
Av = 11 (As Shown)
Figure 8-25. AC Coupled Non-Inverting Amplifier
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Figure 8-26. High Input Z, DC Differential Amplifier
Figure 8-27. Bridge Current Amplifier
Figure 8-28. High Input Z Adjustable-Gain DC Instrumentation Amplifier
20
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9 Power Supply Recommendations
For proper operation, the power supplies must be properly decoupled. For decoupling the supply pins it is
suggested that 10-nF capacitors be placed as close as possible to the op-amp power supply pins. For single
supply, place a capacitor between V+ and V– supply leads. For dual supplies, place one capacitor between V+
and ground, and one capacitor between V– and ground.
Precautions should be taken to insure that the power supply for the integrated circuit never becomes reversed
in polarity or that the unit is not inadvertently installed backwards in a test socket as an unlimited current surge
through the resulting forward diode within the IC could cause fusing of the internal conductors and result in a
destroyed unit.
10 Layout
10.1 Layout Guidelines
For single-ended supply configurations, the V+ pin should be bypassed to ground with a low ESR capacitor.
The optimum placement is closest to the V+ pin. Care should be taken to minimize the loop area formed by the
bypass capacitor connection between V+ and ground. The ground pin should be connected to the PCB ground
plane at the pin of the device. The feedback components should be placed as close to the device as possible to
minimize stray parasitics.
For dual supply configurations, both the V+ pin and V- pin should be bypassed to ground with a low ESR
capacitor. The optimum placement is closest to the corresponding supply pin. Care should be taken to minimize
the loop area formed by the bypass capacitor connection between V+ or V- and ground. The feedback
components should be placed as close to the device as possible to minimize stray parasitics.
For both configurations, as ground plane underneath the device is recommended.
10.2 Layout Example
Figure 10-1. Layout Example
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11 Device and Documentation Support
11.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
11.2 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
11.3 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
11.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
11.5 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
22
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PACKAGE OPTION ADDENDUM
www.ti.com
29-Sep-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
LM158AH
ACTIVE
TO-99
LMC
8
500
Non-RoHS &
Non-Green
Call TI
Call TI
-55 to 125
( LM158AH, LM158AH
)
Samples
LM158AH/NOPB
ACTIVE
TO-99
LMC
8
500
RoHS & Green
Call TI
Level-1-NA-UNLIM
-55 to 125
( LM158AH, LM158AH
)
Samples
LM158H
ACTIVE
TO-99
LMC
8
500
Non-RoHS &
Non-Green
Call TI
Call TI
-55 to 125
( LM158H, LM158H)
Samples
LM158H/NOPB
ACTIVE
TO-99
LMC
8
500
RoHS & Green
Call TI
Level-1-NA-UNLIM
-55 to 125
( LM158H, LM158H)
Samples
LM158J
ACTIVE
CDIP
NAB
8
40
Non-RoHS
& Green
Call TI
Level-1-NA-UNLIM
-55 to 125
LM158J
Samples
LM258H
ACTIVE
TO-99
LMC
8
500
Non-RoHS &
Non-Green
Call TI
Call TI
-25 to 85
( LM258H, LM258H)
Samples
LM258H/NOPB
ACTIVE
TO-99
LMC
8
500
RoHS & Green
Call TI
Level-1-NA-UNLIM
-25 to 85
( LM258H, LM258H)
Samples
LM2904ITP/NOPB
ACTIVE
DSBGA
YPB
8
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
A
09
Samples
LM2904ITPX/NOPB
ACTIVE
DSBGA
YPB
8
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
A
09
Samples
LM2904M/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
LM
2904M
Samples
LM2904MX
NRND
SOIC
D
8
2500
Non-RoHS
& Green
Call TI
Level-1-235C-UNLIM
-40 to 85
LM
2904M
LM2904MX/NOPB
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
LM
2904M
Samples
LM2904N/NOPB
ACTIVE
PDIP
P
8
40
RoHS & Green
NIPDAU
Level-1-NA-UNLIM
-40 to 85
LM
2904N
Samples
LM358AM
NRND
SOIC
D
8
95
Non-RoHS
& Green
Call TI
Level-1-235C-UNLIM
0 to 70
LM
358AM
LM358AM/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
0 to 70
LM
358AM
LM358AMX
NRND
SOIC
D
8
2500
Non-RoHS
& Green
Call TI
Level-1-235C-UNLIM
0 to 70
LM
358AM
LM358AMX/NOPB
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
0 to 70
LM
358AM
Addendum-Page 1
Samples
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
29-Sep-2022
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
LM358AN/NOPB
ACTIVE
PDIP
P
8
40
RoHS & Green
NIPDAU
Level-1-NA-UNLIM
0 to 70
LM
358AN
Samples
LM358H/NOPB
ACTIVE
TO-99
LMC
8
500
RoHS & Green
Call TI
Level-1-NA-UNLIM
0 to 70
( LM358H, LM358H)
Samples
LM358M
NRND
SOIC
D
8
95
Non-RoHS
& Green
Call TI
Level-1-235C-UNLIM
0 to 70
LM
358M
LM358M/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
0 to 70
LM
358M
LM358MX
NRND
SOIC
D
8
2500
Non-RoHS
& Green
Call TI
Level-1-235C-UNLIM
0 to 70
LM
358M
LM358MX/NOPB
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
0 to 70
LM
358M
Samples
LM358N/NOPB
ACTIVE
PDIP
P
8
40
RoHS & Green
NIPDAU
Level-1-NA-UNLIM
0 to 70
LM
358N
Samples
LM358TP/NOPB
ACTIVE
DSBGA
YPB
8
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
0 to 70
A
07
Samples
LM358TPX/NOPB
ACTIVE
DSBGA
YPB
8
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
0 to 70
A
07
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of