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LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM2904, LM2904B, LM2904V
SLOS068V – JUNE 1976 – REVISED SEPTEMBER 2018
Industry-Standard Dual Operational Amplifiers
1 Features
3 Description
•
•
•
•
The LM358B and LM2904B devices are the nextgeneration versions of the industry-standard LM358
and LM2904 devices, which include two high-voltage
(36-V) operational amplifiers (op amps). These
devices provide outstanding value for cost-sensitive
applications, with features including low offset
(300 µV, typical), common-mode input range to
ground, and high differential input voltage capability.
1
•
•
•
Wide Supply Range of 3 V to 36 V (B Version)
Supply-Current of 300 µA (B Version, Typical)
Unity-Gain Bandwidth of 1.2 MHz (B Version)
Common-Mode Input Voltage Range Includes
Ground, Enabling Direct Sensing Near Ground
Low Input Offset Voltage of 3 mV at 25°C (A and
B Versions, Maximum)
Internal RF and EMI Filter (B Version)
On Products Compliant to MIL-PRF-38535, All
Parameters Are Tested Unless Otherwise Noted.
On All Other Products, Production Processing
Does Not Necessarily Include Testing of All
Parameters.
2 Applications
•
•
•
•
•
•
•
•
•
•
•
Merchant Network and Server Power Supply Units
Multi-Function Printers
Power Supplies and Mobile Chargers
Motor Control: AC Induction, Brushed DC,
Brushless DC, High-Voltage, Low-Voltage,
Permanent Magnet, and Stepper Motor
Desktop PC and Motherboard
Indoor and Outdoor Air Conditioners
Washers, Dryers, and Refrigerators
AC Inverters, String Inverters, Central Inverters,
and Voltage Frequency Drives
Uninterruptible Power Supplies
Programmable Logic Controllers
Electronic Point-of-Sale Systems
Single-Pole, Low-Pass Filter
RG
The LM358B and LM2904B devices simplify circuit
design with enhanced features such as unity-gain
stability, lower offset voltage of 3 mV (maximum at
room temperature), and lower quiescent current of
300 µA (typical). High ESD (2 kV, HBM) and
integrated EMI and RF filters enable the LM358B and
LM2904B devices to be used in the most rugged,
environmentally challenging applications.
The LM358B and LM2904B devices are available in
micro-size packages, such as TSOT-8 and WSON,
as well as industry standard packages, including
SOIC, TSSOP, and VSSOP.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
LM358B(2), LM2904B(2),
LM358, LM358A,LM2904,
SOIC (8)
LM2904V, LM258, LM258A
4.90 mm × 3.90 mm
LM358, LM358A, LM2904,
LM2490V
TSSOP (8)
3.00 mm × 4.40 mm
LM358, LM358A LM2904,
VSSOP (8)
LM2904V, LM258, LM258A
3.00 mm × 3.00 mm
LM358, LM2904
SO (8)
5.20 mm × 5.30 mm
LM358, LM2904, LM358A,
LM258, LM258A
PDIP (8)
9.81 mm × 6.35 mm
LM158, LM158A
CDIP (8)
9.60 mm × 6.67 mm
LM158, LM158A
LCCC (20)
8.89 mm × 8.89 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
(2) Package is for preview only
RF
R1
VOUT
VIN
C1
f-3 dB =
(
RF
VOUT
= 1+
RG
VIN
((
1
1 + sR1C1
1
2pR1C1
(
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. UNLESS OTHERWISE NOTED, this document contains PRODUCTION
DATA.
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM2904, LM2904B, LM2904V
SLOS068V – JUNE 1976 – REVISED SEPTEMBER 2018
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
4
5
6
7.1
7.2
7.3
7.4
7.5
7.6
Absolute Maximum Ratings ...................................... 6
ESD Ratings.............................................................. 6
Recommended Operating Conditions....................... 7
Thermal Information .................................................. 7
Electrical Characteristics: LM358B and LM358BA ... 8
Electrical Characteristics: LM2904B and
LM2904BA ................................................................. 9
7.7 Electrical Characteristics: LM358, LM358A ............ 10
7.8 Electrical Characteristics: LM2904, LM2904V ........ 11
7.9 Electrical Characteristics: LM158, LM158A ............ 12
7.10 Electrical Characteristics: LM258, LM258A .......... 13
7.11 Typical Characteristics .......................................... 14
8
9
Parameter Measurement Information ................ 16
Detailed Description ............................................ 17
9.1
9.2
9.3
9.4
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
17
17
18
18
10 Application and Implementation........................ 19
10.1 Application Information.......................................... 19
10.2 Typical Application ............................................... 19
11 Power Supply Recommendations ..................... 20
12 Layout................................................................... 20
12.1 Layout Guidelines ................................................. 20
12.2 Layout Examples................................................... 21
13 Device and Documentation Support ................. 22
13.1
13.2
13.3
13.4
13.5
13.6
13.7
Documentation Support ........................................
Related Links ........................................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
22
22
22
22
22
22
23
14 Mechanical, Packaging, and Orderable
Information ........................................................... 23
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision U (January 2017) to Revision V
Page
•
Changed the data sheet title ................................................................................................................................................. 1
•
Changed first four items in the Features section ................................................................................................................... 1
•
Changed the first item in the Applications section and added four new items ...................................................................... 1
•
Changed voltage values in the first paragraph of the Description section ............................................................................. 1
•
Changed text in the second paragraph of the Description section......................................................................................... 1
•
Added devices LM358B and LM2904B to data sheet ............................................................................................................ 1
•
Changed the first three rows of the Device Information table and added a a cross-referenced note for PREVIEWstatus devices ......................................................................................................................................................................... 1
•
Added Device Comparison table ........................................................................................................................................... 4
•
Added a table note to the Pin Functions table ...................................................................................................................... 5
•
Changed "free-air temperature" to "ambient temperature" in the Absolute Maximum Ratings condition statement ............. 6
•
Changed all entries in the Absolute Maximum Ratings table except TJ and Tstg .................................................................. 6
•
Deleted lead temperature and case temperature from Absolute Maximum Ratings.............................................................. 6
•
Changed device listings and their voltage values in the ESD Ratings table ......................................................................... 6
•
Changed "free-air temperature" to "ambient temperature" in the Recommended Operating Conditions condition
statement ............................................................................................................................................................................... 7
•
Changed table entries for all parameters in the Recommended Operating Conditions table ................................................ 7
•
Added rows to the Thermal Information table, and a table note regarding device-package combinations .......................... 7
•
Added two Electrical Characteristics tables with five additional devices, and redistributed the seven original devices
differently among the tables ................................................................................................................................................... 8
•
Deleted the Operating Conditions table................................................................................................................................ 13
•
Added a condition statement to the Typical Characteristics section .................................................................................... 14
•
Changed specific voltages to a Recommended Operating Conditions reference ............................................................... 17
2
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Copyright © 1976–2018, Texas Instruments Incorporated
Product Folder Links: LM158 LM258 LM258A LM358 LM358A LM358B LM2904 LM2904B LM2904V
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM2904, LM2904B, LM2904V
www.ti.com
SLOS068V – JUNE 1976 – REVISED SEPTEMBER 2018
Revision History (continued)
•
Changed unity-gain bandwidth from 0.7 MHz for all devices to 1.2 MHz for B-version devices.......................................... 18
•
Changed slew rate from.3 V/µs for all devices to o.5 V/µs for B-version devices................................................................ 18
•
Changed the Input Common Mode Range section in multiple places throughout ............................................................... 18
•
Changed VCC to VS in the Application Information section .................................................................................................. 19
•
Subscripted the suffixes fro RI and RF .................................................................................................................................. 19
•
Changed Operational Amplifier Board Layout for Noninverting Configuration with an image that includes a dual op amp 21
•
Added Preview designation to the LM358B and LM2904B devices in Table 1 ................................................................... 22
Changes from Revision T (April 2015) to Revision U
Page
•
Changed data sheet title......................................................................................................................................................... 1
•
Added Receiving Notification of Documentation Updates section and Community Resources section ............................. 22
Changes from Revision S (January 2014) to Revision T
•
Page
Added Applications section, ESD Ratings table, Feature Description section, Device Functional Modes, Application
and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation
Support section, and Mechanical, Packaging, and Orderable Information section ............................................................... 1
Changes from Revision R (July 2010) to Revision S
Page
•
Converted this data sheet from the QS format to DocZone using the PDF on the web ........................................................ 1
•
Deleted Ordering Information table ........................................................................................................................................ 1
•
Updated Features to include Military Disclaimer .................................................................................................................... 1
•
Added Typical Characteristics section.................................................................................................................................. 14
•
Added ESD warning ............................................................................................................................................................. 23
Copyright © 1976–2018, Texas Instruments Incorporated
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Product Folder Links: LM158 LM258 LM258A LM358 LM358A LM358B LM2904 LM2904B LM2904V
3
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM2904, LM2904B, LM2904V
SLOS068V – JUNE 1976 – REVISED SEPTEMBER 2018
www.ti.com
5 Device Comparison Table
4
PART NUMBER
SUPPLY
VOLTAGE
TEMPERATURE
RANGE
VOS (MAXIMUM
AT 25°C)
IQ / CH (TYPICAL AT
25°C)
INTEGRATED EMI
FILTER
PACKAGE
LM358B
3 V–36 V
–40°C to 85°C
3 mV
300 µA
Yes
D, PW
LM2904B
3 V–36 V
–40°C to 125°C
3 mV
300 µA
Yes
D, PW
LM358
3 V–32 V
0°C to 70°C
7 mV
350 µA
No
D, PW, DGK, P, PS
LM2904
3 V–26 V
–40°C to 125°C
7 mV
350 µA
No
D, PW, DGK, P, PS
LM358A
3 V–32 V
0°C to 70°C
3 mV
350 µA
No
D, PW, DGK, P
LM2904V
3 V–32 V
–40°C to 125°C
3 mV
350 µA
No
D, PW
LM158
3 V–32 V
–55°C to 125°C
5 mV
350 µA
No
JG, FK
LM158A
3 V–32 V
–55°C to 125°C
3 mV
350 µA
No
JG, FK
LM258
3 V–32 V
–25°C to 85°C
5 mV
350 µA
No
D, DGK, P
LM258A
3 V–32 V
–25°C to 85°C
3 mV
350 µA
No
D, DGK, P
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Copyright © 1976–2018, Texas Instruments Incorporated
Product Folder Links: LM158 LM258 LM258A LM358 LM358A LM358B LM2904 LM2904B LM2904V
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM2904, LM2904B, LM2904V
www.ti.com
SLOS068V – JUNE 1976 – REVISED SEPTEMBER 2018
6 Pin Configuration and Functions
D, DGK, P, PS, PW, and JG Packages
8-Pin SOIC, VSSOP, PDIP, SO, TSSOP, and CDIP
Top View
NC
19
4
18
NC
IN1±
5
17
OUT2
NC
6
16
NC
IN1+
7
15
IN2±
NC
8
14
NC
NC
9
Not to scale
NC
13
IN2+
NC
5
V+
4
20
V±
12
IN2±
IN2+
6
NC
3
1
IN1+
11
OUT2
NC
7
OUT1
2
2
IN1±
10
V+
V±
8
NC
1
3
OUT1
FK Package
20-Pin LCCC
Top View
Not to scale
NC - No internal connection
Pin Functions
PIN
I/O
DESCRIPTION
LCCC (1)
SOIC, SSOP, CDIP, PDIP, SO,
TSSOP, CFP (1)
IN1–
5
2
I
Negative input
IN1+
7
3
I
Positive input
IN2–
15
6
I
Negative input
IN2+
12
5
I
Positive input
OUT1
2
1
O
Output
OUT2
17
7
O
Output
V–
10
4
—
Negative (lowest) supply or ground (for singlesupply operation)
NC
1, 3, 4, 6, 8, 9, 11,
13, 14, 16, 18, 19
—
—
No internal connection
V+
20
8
—
Positive (highest) supply
NAME
(1)
For a listing of which devices are available in what packages, see Device Comparison Table.
Copyright © 1976–2018, Texas Instruments Incorporated
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LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM2904, LM2904B, LM2904V
SLOS068V – JUNE 1976 – REVISED SEPTEMBER 2018
www.ti.com
7 Specifications
7.1 Absolute Maximum Ratings
over operating ambient temperature range (unless otherwise noted) (1)
Supply voltage, VS = ([V+] – [V–])
Differential input voltage, VID (2)
Input voltage, VI
Either input
MIN
MAX
LM358B, LM358BA,
LM2904B, LM2904BA
–0.3
±20 or 40
LM158, LM258, LM358,
LM158A, LM258A, LM358A,
LM2904V
–0.3
±16 or 32
LM2904
–0.3
±13 or 26
LM358B, LM358BA,
LM2904B, LM2904BA,LM158,
LM258, LM358, LM158A,
LM258A, LM358A, LM2904V
–32
32
LM2904
–26
26
LM358B, LM358BA,
LM2904B, LM2904BA
–0.3
40
LM158, LM258, LM358,
LM158A, LM258A, LM358A,
LM2904V
–0.3
32
LM2904
–0.3
26
Duration of output short circuit (one amplifier) to ground at (or below) TA = 25°C,
VS ≤ 15 V (3)
Operating ambient temperature, TA
Unlimited
LM158, LM158A
–55
125
LM258, LM258A
–25
85
LM358B, LM358BA
–40
85
0
70
–40
125
LM358, LM358A
LM2904B, LM2904BA,
LM2904, LM2904V
Operating virtual-junction temperature, TJ
Storage temperature, Tstg
(1)
(2)
(3)
–65
UNIT
V
V
V
s
°C
150
°C
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Differential voltages are at IN+, with respect to IN−.
Short circuits from outputs to VS can cause excessive heating and eventual destruction.
7.2 ESD Ratings
VALUE
UNIT
LM358B, LM358BA, LM2904B, AND LM2904BA
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±750
V
LM158, LM258, LM358, LM158, LM258A, LM358A, LM2904, AND LM2904V
V(ESD)
(1)
(2)
6
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
Charged-device model (CDM), per JEDEC specification JESD22-C101
±500
(2)
±1000
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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SLOS068V – JUNE 1976 – REVISED SEPTEMBER 2018
7.3 Recommended Operating Conditions
over operating ambient temperature range (unless otherwise noted)
VS
Supply voltage, VS= ([V+] – [V–])
VCM
Common-mode voltage
MIN
MAX
LM358B, LM358BA, LM2904B,
LM2904BA
3
36
LM158, LM258, LM358, LM158A,
LM258A, LM358A, LM2904V
3
30
LM2904
TA
Operating ambient temperature
3
26
V–
VS – 2
LM358B, LM358BA
–40
85
LM2904B, LM2904BA, LM2904,
LM2904V
–40
125
LM358, LM358A
0
70
LM258, LM258A
–20
85
LM158, LM158A
–55
125
UNIT
V
V
°C
7.4 Thermal Information
LM258, LM258A, LM358, LM358A, LM358B, LM358BA, LM2904,
LM2904B, LM2904BA, LM2904V (2)
THERMAL METRIC (1)
LM158, LM158A
D
(SOIC)
DGK
(VSSOP)
P
(PDIP)
PS
(SO)
PW
(TSSOP)
FK
(LCCC)
JG
(CDIP)
UNIT
8 PINS
8 PINS
8 PINS
8 PINS
8 PINS
20 PINS
8 PINS
RθJA
Junction-to-ambient thermal
resistance
124.7
181.4
80.9
116.9
171.7
—
—
°C/W
RθJC(top)
Junction-to-case (top)
thermal resistance
66.9
69.4
70.4
62.5
68.8
5.61
14.5
°C/W
RθJB
Junction-to-board thermal
resistance
67.9
102.9
57.4
68.6
99.2
—
—
°C/W
ψJT
Junction-to-top
characterization parameter
19.2
11.8
40
21.9
11.5
—
—
°C/W
ψJB
Junction-to-board
characterization parameter
67.2
101.2
56.9
67.6
97.9
—
—
°C/W
RθJC(bot)
Junction-to-case (bottom)
thermal resistance
—
—
—
—
—
12.1
—
°C/W
(1)
(2)
For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.
For a listing of which devices are available in what packages, see Device Comparison Table
Copyright © 1976–2018, Texas Instruments Incorporated
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SLOS068V – JUNE 1976 – REVISED SEPTEMBER 2018
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7.5 Electrical Characteristics: LM358B and LM358BA
For VS = (V+) – (V–) = 5 V to 36 V (±2.25 V to ±18 V), TA = 25 °C, RL = 10 kΩ connected to VS / 2, and VCM = VOUT = VS / 2
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP (1)
MAX
1
3
0.5
1.8
UNIT
OFFSET VOLTAGE
LM358B
VOS
TA = –40°C to 85°C
Input offset voltage
4
mV
LM358BA
TA = –40°C to 85°C
dVOS/dT
Input offset voltage drift
PSRR
Power-supply rejection
ratio
(ΔVIO/ΔVS)
Channel separation, dc
2.5
TA = –40°C to 85°C
±3.5
µV/°C
±1
At dc
15
120
µV/V
dB
INPUT VOLTAGE RANGE
VCM
Common-mode input
voltage range
CMRR
Common-mode rejection
ratio
VS = 3 V to 36 V
(V–) < VCM < (V+) – 1.5 V
(V–) < VCM < (V+) – 2 V
(V–)
(V+) – 1.5
(V–)
(V+) – 2
V
TA = –40°C to 85°C
80
103
70
96
dB
TA = –40°C to 85°C
INPUT BIAS CURRENT
10
IB
Input bias current
IOS
Input offset current
35
nA
TA = –40°C to 85°C
50
0.5
4
nA
TA = –40°C to 85°C
5
NOISE
En
Input voltage noise
ƒ = 0.1 to 10 Hz
en
Input voltage noise density
ƒ = 1 kHz
8
µVPP
40
nV/√Hz
10 || 0.1
MΩ || pF
4 || 1.5
GΩ || pF
INPUT IMPEDANCE
ZID
Differential
ZIC
Common-mode
OPEN-LOOP GAIN
AOL
Open-loop voltage gain
VS = 15 V, VO = 1 V to 11 V, RL ≥ 2 kΩ
70
140
V/mV
TA = –40°C to 85°C
35
FREQUENCY RESPONSE
GBW
Gain-bandwidth product
1.2
MHz
SR
Slew rate
G = +1
0.5
V/µs
φm
Phase margin
G = +1, RL = 10 kΩ, CL = 20 pF
56
º
tS
Settling time
To 0.1%, VS = 5 V, 2-V step , G = +1, CL = 100 pF
4
µs
tOR
Overload recovery time
VIN × gain > VS
30
µs
THD + N
Total harmonic distortion +
noise
G = +1, ƒ = 1 kHz, VO = 3.53 VRMS, RL = 100 kΩ
0.001%
OUTPUT
Positive Rail (V+)
Voltage output swing from
rail
VO
Negative Rail (V-)
ISC
Short-circuit current
CLOAD
Capacitive load drive
RO
Open-loop output
resistance
IOUT = 50 µA
1.35
IOUT = 1 mA
1.4
1.6
IOUT = 5 mA
1.5
1.75
IOUT = 50 µA
0.1
0.15
IOUT = 1 mA
0.75
1
±40
60
VS = 20 V
f = 1 MHz, IO = 0 A
1.5
V
mA
100
pF
300
Ω
POWER SUPPLY
VS = 5 V; VO = 2.5 V; IO = 0 A
IQ
Quiescent current per
amplifier
(1)
All typical values are TA = 25°C.
8
VS = 36 V; VO = 2.5 V; IO = 0 A
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300
460
µA
TA = – 40°C to 85°C
800
Copyright © 1976–2018, Texas Instruments Incorporated
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SLOS068V – JUNE 1976 – REVISED SEPTEMBER 2018
7.6 Electrical Characteristics: LM2904B and LM2904BA
For VS = (V+) – (V–) = 5 V to 36 V (±2.25 V to ±18 V), TA = 25 °C, RL = 10 kΩ connected to VS / 2, and VCM = VOUT = VS / 2
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP (1)
MAX
1
3
0.5
1.8
UNIT
OFFSET VOLTAGE
LM2904B
VOS
TA = –40°C to 125°C
Input offset voltage
4
mV
LM2904BA
TA = –40°C to 125°C
dVOS/dT
Input offset voltage drift
PSRR
Power-supply rejection ratio
(ΔVIO/ΔVS)
Channel separation, dc
2.5
TA = –40°C to 125°C
±3.5
µV/°C
±1
At dc
15
120
µV/V
dB
INPUT VOLTAGE RANGE
VCM
Common-mode input voltage
range
CMRR
Common-mode rejection ratio
VS = 3 V to 36 V
(V–) < VCM < (V+) – 1.5 V
(V–) < VCM < (V+) – 2 V
(V–)
(V+) – 1.5
(V–)
(V+) – 2
V
TA = –40°C to 125°C
80
103
70
96
dB
TA = –40°C to 125°C
INPUT BIAS CURRENT
10
IB
Input bias current
IOS
Input offset current
35
nA
TA = –40°C to 125°C
50
0.5
4
nA
TA = –40°C to 125°C
5
NOISE
En
Input voltage noise
ƒ = 0.1 to 10 Hz
en
Input voltage noise density
ƒ = 1 kHz
8
µVPP
40
nV/√Hz
10 || 0.1
MΩ || pF
4 || 1.5
GΩ || pF
INPUT IMPEDANCE
ZID
Differential
ZIC
Common-mode
OPEN-LOOP GAIN
AOL
Open-loop voltage gain
VS = 15 V; VO = 1 V to 11 V; RL ≥ 2 kΩ
70
140
V/mV
TA = –40°C to 125°C
35
FREQUENCY RESPONSE
GBW
Gain-bandwidth product
1.2
MHz
SR
Slew rate
G = +1
0.5
V/µs
φm
Phase margin
G = +1, RL = 10 kΩ, CL = 20 pF
56
º
tS
Settling time
To 0.1%, VS = 5 V, 2-V step , G = +1, CL = 100 pF
4
µs
tOR
Overload recovery time
VIN × gain > VS
30
µs
THD + N
Total harmonic distortion +
noise
G = +1, ƒ = 1 kHz, VO = 3.53 VRMS, RL = 100 kΩ
0.001%
OUTPUT
Positive rail (V+)
VO
Voltage output swing from rail
Negative rail (V–)
ISC
Short-circuit current
CLOAD
Capacitive load drive
RO
Open-loop output resistance
IOUT = 50 µA
1.35
IOUT = 1 mA
1.4
1.6
IOUT = 5mA
1.5
1.75
IOUT = 50 µA
0.1
0.15
IOUT = 1 mA
0.75
1
±40
60
VS = 20 V
f = 1 MHz, IO = 0 A
1.5
V
mA
100
pF
300
Ω
POWER SUPPLY
VS = 5 V; VO = 2.5 V; IO = 0 A
IQ
Quiescent current per amplifier
(1)
All typical values are TA = 25°C.
VS = 36 V; VO = 2.5 V; IO = 0 A
Copyright © 1976–2018, Texas Instruments Incorporated
300
460
µA
TA = –40°C to 125°C
800
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9
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7.7 Electrical Characteristics: LM358, LM358A
For VS = (V+) – (V–) = 5 V, TA = 25 °C, (unless otherwise noted)
TEST CONDITIONS (1)
PARAMETER
MIN
TYP (2)
MAX
3
7
UNIT
OFFSET VOLTAGE
LM358
VOS
Input offset voltage
VS = 5 V to 30 V; VCM = 0 V; VO = 1.4
V
TA = 0°C to 70°C
9
mV
LM358A
2
3
TA = 0°C to 70°C
dVOS/dT
Input offset voltage drift
PSRR
Input offset voltage vs power
supply (ΔVIO/ΔVS)
VS = 5 V to 30 V
VO1/ VO2
Channel separation
f = 1 kHz to 20 kHz
5
LM358
TA = 0°C to 70°C
7
LM358A
TA = 0°C to 70°C
7
µV/°C
65
20
100
dB
120
dB
INPUT VOLTAGE RANGE
VCM
Common-mode voltage range
CMRR
Common-mode rejection ratio
VS = 5 V to 30 V
LM358
VS = 30 V
LM358A
VS = 5 V to 30 V
LM358
VS = 30 V
LM358A
(V–)
(V+) – 1.5
(V–)
(V+) – 2
V
TA = 0°C to 70°C
VS = 5 V to 30 V; VCM = 0 V
65
80
dB
INPUT BIAS CURRENT
–20
–250
LM358
IB
Input bias current
TA = 0°C to 70°C
VO = 1.4 V
–500
nA
–15
–100
LM358A
TA = 0°C to 70°C
–200
2
50
LM358
IOS
Input offset current
TA = 0°C to 70°C
VO = 1.4 V
150
nA
2
30
LM358A
TA = 0°C to 70°C
75
10
dIOS/dT
Input offset current drift
pA/°C
LM358A
TA = 0°C to 70°C
300
NOISE
en
Input voltage noise density
f = 1 kHz
40
nV/√Hz
OPEN-LOOP GAIN
AOL
Open-loop voltage gain
25
VS = 15 V; VO = 1 V to 11 V; RL ≥ 2 kΩ
100
V/mV
TA = 0°C to 70°C
15
FREQUENCY RESPONSE
GBW
Gain bandwidth product
SR
Slew rate
G = +1
0.7
MHz
0.3
V/µs
OUTPUT
VS = 30 V; RL = 2 kΩ
Positive rail
VO
Voltage output swing from rail
TA = 0°C to 70°C
4
VS = 30 V; RL ≥ 10 kΩ
2
VS = 5 V; RL ≥ 2 kΩ
Negative rail
VS = 5 V; RL ≤ 10 kΩ
TA = 0°C to 70°C
5
–20
VS = 15 V; VO = 0 V; VID
=1V
Source
–10
10
Sink
20
mV
–60
Output current
VS = 15 V; VO = 15 V;
VID = –1 V
V
–30
LM358A
TA = 0°C to 70°C
IO
3
1.5
TA = 0°C to 70°C
LM358
mA
20
5
12
µA
VID = –1 V; VO = 200 mV
ISC
Short-circuit current
30
VS = 10 V; VO = VS / 2
±40
±60
mA
POWER SUPPLY
IQ
(1)
(2)
10
Quiescent current per
amplifier
VO = 2.5 V; IO = 0 A
VS = 30 V; VO = 15 V; IO = 0 A
TA = 0°C to 70°C
350
600
500
1000
µA
All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified.
Maximum VS for testing purposes is 30 V for LM358 and LM358A.
All typical values are TA = 25°C.
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SLOS068V – JUNE 1976 – REVISED SEPTEMBER 2018
7.8 Electrical Characteristics: LM2904, LM2904V
For VS = (V+) – (V–) = 5 V, TA = 25 °C, (unless otherwise noted)
TEST CONDITIONS (1)
PARAMETER
MIN
TYP
(2)
MAX
UNIT
OFFSET VOLTAGE
VOS
Input offset voltage
VS = 5 V to maximum; VCM = 0 V; VO = 1.4
V
dVOS/dT
Input offset voltage drift
PSRR
Input offset voltage vs power
supply (ΔVIO/ΔVS)
VS = 5 V to 30 V
VO1/ VO2
Channel separation
f = 1 kHz to 20 kHz
Non-A suffix
devices
A-suffix
devices
3
TA = –40°C to 125°C
7
10
mV
1
TA = –40°C to 125°C
2
4
TA = –40°C to 125°C
7
65
µV/°C
100
dB
120
dB
INPUT VOLTAGE RANGE
VCM
Common-mode voltage range
CMRR
Common-mode rejection ratio
VS = 5 V to maximum
(V–)
(V+) – 1.5
(V–)
(V+) – 2
V
TA = –40°C to 125°C
VS = 5 V to maximum; VCM = 0 V
65
80
dB
INPUT BIAS CURRENT
–20
IB
Input bias current
VO = 1.4 V
Non-V suffix
device
IOS
Input offset current
VO = 1.4 V
V-suffix
device
dIOS/dT
–250
nA
TA = –40°C to 125°C
Input offset current drift
–500
2
TA = –40°C to 125°C
50
300
nA
2
TA = –40°C to 125°C
50
150
TA = –40°C to 125°C
10
pA/°C
40
nV/√Hz
NOISE
en
Input voltage noise density
f = 1 kHz
OPEN-LOOP GAIN
AOL
Open-loop voltage gain
VS = 15 V; VO = 1 V to 11 V; RL ≥ 2 kΩ
25
100
V/mV
TA = –40°C to 125°C
15
FREQUENCY RESPONSE
GBW
Gain bandwidth product
SR
Slew rate
G = +1
0.7
MHz
0.3
V/µs
OUTPUT
RL ≥ 10 kΩ
Non-V suffix
device
Positive rail
VO
VS – 1.5
VS = maximum; RL =
2 kΩ
Voltage output swing from rail
VS = maximum; RL =
2 kΩ
V-suffix device
Negative rail
22
VS = maximum; RL ≥
10 kΩ
23
VS = 15 V; VO = 0 V; VID = 1 V
Source
VS = 15 V; VO = 15 V; VID = –1 V
Sink
27
28
–20
–30
TA = –40°C to 125°C
TA = –40°C to 125°C
5
Output current
TA = –40°C to 125°C
ISC
Short-circuit current
mV
mA
20
5
Non-V suffix device
VID = -1 V; VO = 200 mV
20
–10
10
IO
V
26
VS = maximum; RL ≥
10 kΩ
VS = 5 V; RL ≤ 10 kΩ
24
TA = –40°C to 125°C
30
µA
V-suffix device
12
VS = 10 V; VO = VS / 2
40
±40
±60
mA
POWER SUPPLY
IQ
(1)
(2)
Quiescent current per amplifier
VO = 2.5 V; IO = 0 A
VS = maximum; VO = maximum / 2; IO = 0 A
TA = –40°C to 125°C
350
600
500
1000
µA
All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified.
Maximum VS for testing purposes is 26 V for LM2904 and 32 V for LM2904V.
All typical values are TA = 25°C.
Copyright © 1976–2018, Texas Instruments Incorporated
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SLOS068V – JUNE 1976 – REVISED SEPTEMBER 2018
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7.9 Electrical Characteristics: LM158, LM158A
For VS = (V+) – (V–) = 5 V, TA = 25 °C, (unless otherwise noted)
TEST CONDITIONS (1)
PARAMETER
MIN
TYP (2)
MAX
3
5
UNIT
OFFSET VOLTAGE
LM158
VOS
Input offset voltage
TA = –55°C to 125°C
VS = 5 V to 30 V; VCM = 0 V; VO = 1.4 V
7
mV
2
LM158A
TA = –55°C to 125°C
dVOS/dT
Input offset voltage drift
PSRR
Input offset voltage vs power supply
(ΔVIO/ΔVS)
VS = 5 V to 30 V
VO1/ VO2
Channel separation
f = 1 kHz to 20 kHz
4
LM158
TA = –55°C to 125°C
7
LM158A
TA = –55°C to 125°C
7
65
15 (3)
µV/°C
100
dB
120
dB
INPUT VOLTAGE RANGE
VCM
Common-mode voltage range
CMRR
Common-mode rejection ratio
VS = 5 V to 30 V
LM158
VS = 30 V
LM158A
VS = 5 V to 30 V
LM158
VS = 30 V
LM158A
(V–)
(V+) – 1.5
(V–)
(V+) – 2
V
TA = –55°C to 125°C
VS = 5 V to 30 V; VCM = 0 V
70
80
dB
INPUT BIAS CURRENT
–20
–150
LM158
IB
Input bias current
TA = –55°C to 125°C
VO = 1.4 V
–300
nA
–15
–50
LM158A
TA = –55°C to 125°C
–100
2
30
LM158
IOS
Input offset current
TA = –55°C to 125°C
VO = 1.4 V
100
nA
2
10
LM158A
TA = –55°C to 125°C
30
10
dIOS/dT
Input offset current drift
pA/°C
LM158A
TA = –55°C to 125°C
200
NOISE
en
Input voltage noise density
f = 1 kHz
40
nV/√Hz
OPEN-LOOP GAIN
AOL
Open-loop voltage gain
50
VS = 15 V; VO = 1 V to 11 V; RL ≥ 2 kΩ
100
V/mV
TA = –55°C to 125°C
25
FREQUENCY RESPONSE
GBW
Gain bandwidth product
SR
Slew rate
0.7
V/µs
VS = 30 V; RL = 2 kΩ
Positive rail
VO
Voltage output swing from rail
TA = –55°C to 125°C
4
VS = 30 V; RL ≥ 10 kΩ
2
VS = 5 V; RL ≥ 2 kΩ
Negative rail
VS = 5 V; RL ≤ 10 kΩ
VS = 15 V; VO = 0 V; VID = 1 V
Source
TA = –55°C to 125°C
VS = 15 V; VO = 15 V; VID = –1
V
5
Short-circuit current
20
mV
–60
–10
10
mA
20
Sink
TA = –55°C to 125°C
VID = –1 V; VO = 200 mV
ISC
V
–30
LM158A
TA = –55°C to 125°C
Output current
3
1.5
–20
IO
MHz
G = +1
5
12
VS = 10 V; VO = VS / 2
30
±40
µA
±60
mA
POWER SUPPLY
IQ
(1)
(2)
(3)
12
Quiescent current per amplifier
VO = 2.5 V; IO = 0 A
VS = 30 V; VO = 15 V; IO = 0 A
TA = –55°C to 125°C
350
600
500
1000
µA
All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified.
Maximum VS for testing purposes is 30 V for LM158 and LM158A.
All typical values are TA = 25°C.
On products compliant to MIL-PRF-38535, this parameter is not production tested.
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SLOS068V – JUNE 1976 – REVISED SEPTEMBER 2018
7.10 Electrical Characteristics: LM258, LM258A
For VS = (V+) – (V–) = 5 V, TA = 25 °C, (unless otherwise noted)
TEST CONDITIONS (1)
PARAMETER
MIN
TYP (2)
MAX
3
5
UNIT
OFFSET VOLTAGE
LM258
VOS
Input offset voltage
TA = –25°C to 85°C
VS = 5 V to 30 V; VCM = 0 V; VO = 1.4 V
7
mV
2
3
LM258A
TA = –25°C to 85°C
dVOS/dT
Input offset voltage drift
PSRR
Input offset voltage vs power supply
(ΔVIO/ΔVS)
VS = 5 V to 30 V
VO1/ VO2
Channel separation
f = 1 kHz to 20 kHz
4
LM258
TA = –25°C to 85°C
7
LM258A
TA = –25°C to 85°C
7
µV/°C
65
15
100
dB
120
dB
INPUT VOLTAGE RANGE
VCM
Common-mode voltage range
CMRR
Common-mode rejection ratio
VS = 5 V to 30 V
LM258
VS = 30 V
LM258A
VS = 5 V to 30 V
LM258
VS = 30 V
LM258A
(V–)
(V+) – 1.5
(V–)
(V+) – 2
V
TA = –25°C to 85°C
VS = 5 V to 30 V; VCM = 0 V
70
80
dB
INPUT BIAS CURRENT
–20
–150
LM258
IB
Input bias current
TA = –25°C to 85°C
VO = 1.4 V
–300
nA
–15
–80
LM258A
TA = –25°C to 85°C
–100
2
30
LM258
IOS
Input offset current
TA = –25°C to 85°C
VO = 1.4 V
100
nA
2
15
LM258A
TA = –25°C to 85°C
30
10
dIOS/dT
Input offset current drift
pA/°C
LM258A
TA = –25°C to 85°C
200
NOISE
en
Input voltage noise density
f = 1 kHz
40
nV/√Hz
OPEN-LOOP GAIN
AOL
Open-loop voltage gain
50
VS = 15 V; VO = 1 V to 11 V; RL ≥ 2 kΩ
100
V/mV
TA = –25°C to 85°C
25
FREQUENCY RESPONSE
GBW
Gain bandwidth product
SR
Slew rate
G = +1
0.7
MHz
0.3
V/µs
OUTPUT
VS = 30 V; RL = 2 kΩ
Positive rail
VO
Voltage output swing from rail
TA = –25°C to 85°C
4
VS = 30 V; RL ≥ 10 kΩ
2
VS = 5 V; RL ≥ 2 kΩ
Negative rail
VS = 5 V; RL ≤ 10 kΩ
TA = –25°C to 85°C
5
–20
VS = 15 V; VO = 0 V; VID = 1 V
IO
Source
VS = 15 V; VO = 15 V; VID = –1
V
Short-circuit current
20
mV
–60
–10
10
mA
20
Sink
TA = –25°C to 85°C
VID = –1 V; VO = 200 mV
ISC
V
–30
LM258A
TA = –25°C to 85°C
Output current
3
1.5
5
12
VS = 10 V; VO = VS / 2
30
±40
µA
±60
mA
POWER SUPPLY
IQ
(1)
(2)
Quiescent current per amplifier
VO = 2.5 V; IO = 0 A
VS = 30 V; VO = 15 V; IO = 0 A
TA = –25°C to 85°C
350
600
500
1000
µA
All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified.
Maximum VS for testing purposes is 30 V for LM258 and LM258A.
All typical values are TA = 25°C.
Copyright © 1976–2018, Texas Instruments Incorporated
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SLOS068V – JUNE 1976 – REVISED SEPTEMBER 2018
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7.11 Typical Characteristics
Typical characteristics section is applicable for LM158, LM158A, LM258, LM258A, LM358, LM358A, LM2904, and LM2904V
20
0.36
18
0.34
–55C
0C
125C
14
12
10
8
5Vdc
15Vdc
30Vdc
6
4
0.32
Supply Current (mA)
Input Current (nAdc)
16
0.3
0.28
0.26
0.24
0.22
2
0
–55
–35
–15
5
45
25
65
Temperature (°C)
85
105
0.2
125
0
Figure 1. Input Current vs. Temperature
10
15
20
Supply Voltage (Vdc)
25
30
Figure 2. Supply Current vs. Supply Voltage
160
100
CMRR
90
RL=20K
RL=2K
140
80
120
70
100
CMRR (dB)
Avol Voltage Gain (dB)
5
80
60
60
50
40
30
40
20
20
10
0
0
0
5
10
15
20
25
30
V+ Supply Voltage (Vdc)
35
0.1
40
10
100
1000
Frequency (kHz)
C001
Figure 4. Common-Mode Rejection Ratio vs. Frequency
Figure 3. Voltage Gain vs. Supply Voltage
0.50
3.5
VOUT
3.0
0.45
2.5
0.40
Voltage (V)
Voltage (V)
1
2.0
1.5
0.35
0.30
1.0
0.25
0.5
VOUT
0.20
0.0
0
4
8
12
16
20
24
Time ( s)
28
32
36
40
C001
Figure 5. Voltage Follower Large Signal Response (50 pF)
14
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0
2
4
6
Time ( s)
8
10
C001
Figure 6. Voltage Follower Small Signal Response (50 pF)
Copyright © 1976–2018, Texas Instruments Incorporated
Product Folder Links: LM158 LM258 LM258A LM358 LM358A LM358B LM2904 LM2904B LM2904V
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SLOS068V – JUNE 1976 – REVISED SEPTEMBER 2018
Typical Characteristics (continued)
Typical characteristics section is applicable for LM158, LM158A, LM258, LM258A, LM358, LM358A, LM2904, and LM2904V
8
Output Voltage (Vdc) relative to Vcc
20
17.5
Output Swing (Vp-p)
15
12.5
10
7.5
5
2.5
0
1
10
100
Frequency (kHz)
7
6
5
4
3
2
1
0.001
1k
Figure 7. Maximum Output Swing vs. Frequency
(VCC = 15 V)
0.1
1
Output Sink Current (mAdc)
10
100
Figure 8. Output Sourcing Characteristics
90
10
5Vdc
15Vdc
30Vdc
80
Output Current (mAdc)
Output Voltage (Vdc)
0.01
1
0.1
70
60
50
40
30
20
10
0.01
0.001
0
0.01
0.1
1
10
Output Sink Current (mAdc)
Figure 9. Output Sinking Characteristics
Copyright © 1976–2018, Texas Instruments Incorporated
100
–55
–35
–15
5
45
25
65
Temperature (°C)
85
105
125
Figure 10. Source Current Limiting
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LM158, LM158A, LM258, LM258A
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SLOS068V – JUNE 1976 – REVISED SEPTEMBER 2018
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8 Parameter Measurement Information
900 Ω
VCC+
VCC+
−
VI
VO
+
100 Ω
−
VI = 0 V
RS
VCC−
CL
RL
VO
+
VCC−
Figure 11. Unity-Gain Amplifier
16
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Figure 12. Noise-Test Circuit
Copyright © 1976–2018, Texas Instruments Incorporated
Product Folder Links: LM158 LM258 LM258A LM358 LM358A LM358B LM2904 LM2904B LM2904V
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SLOS068V – JUNE 1976 – REVISED SEPTEMBER 2018
9 Detailed Description
9.1 Overview
These devices consist of two independent, high-gain frequency-compensated operational amplifiers designed to
operate from a single supply over a wide range of voltages. Operation from split supplies also is possible if the
difference between the two supplies is within the supply voltage range specified in the Recommended Operating
Conditions section, and VS is at least 1.5 V more positive than the input common-mode voltage. The low supplycurrent drain is independent of the magnitude of the supply voltage.
Applications include transducer amplifiers, dc amplification blocks, and all the conventional operational amplifier
circuits that now can be implemented more easily in single-supply-voltage systems. For example, these devices
can be operated directly from the standard 5-V supply used in digital systems and easily can provide the required
interface electronics without additional ±5-V supplies.
9.2 Functional Block Diagram
VCC+
≈6-µA
Current
Regulator
≈100-µA
Current
Regulator
≈6-µA
Current
Regulator
OUT
IN−
≈50-µA
Current
Regulator
IN+
GND (or VCC−)
To Other Amplifier
COMPONENT COUNT
Epi-FET
Diodes
Resistors
Transistors
Capacitors
Copyright © 1976–2018, Texas Instruments Incorporated
1
2
7
51
2
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LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM2904, LM2904B, LM2904V
SLOS068V – JUNE 1976 – REVISED SEPTEMBER 2018
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9.3 Feature Description
9.3.1 Unity-Gain Bandwidth
The unity-gain bandwidth is the frequency up to which an amplifier with a unity gain may be operated without
greatly distorting the signal. These devices have a 1.2-MHz unity-gain bandwidth (B Version).
9.3.2 Slew Rate
The slew rate is the rate at which an operational amplifier can change its output when there is a change on the
input. These devices have a 0.5-V/µs slew rate (B Version).
9.3.3 Input Common Mode Range
The valid common mode range is from device ground to VS – 1.5 V (VS – 2 V across temperature). Inputs may
exceed VS up to the maximum VS without device damage. At least one input must be in the valid input commonmode range for the output to be the correct phase. If both inputs exceed the valid range, then the output phase is
undefined. If either input more than 0.3 V below V– then input current should be limited to 1 mA and the output
phase is undefined.
9.4 Device Functional Modes
These devices are powered on when the supply is connected. This device can be operated as a single-supply
operational amplifier or dual-supply amplifier, depending on the application.
18
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Copyright © 1976–2018, Texas Instruments Incorporated
Product Folder Links: LM158 LM258 LM258A LM358 LM358A LM358B LM2904 LM2904B LM2904V
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM2904, LM2904B, LM2904V
www.ti.com
SLOS068V – JUNE 1976 – REVISED SEPTEMBER 2018
10 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
10.1 Application Information
The LMx58 and LM2904 operational amplifiers are useful in a wide range of signal conditioning applications.
Inputs can be powered before VS for flexibility in multiple supply circuits.
10.2 Typical Application
A typical application for an operational amplifier is an inverting amplifier. This amplifier takes a positive voltage on
the input, and makes it a negative voltage of the same magnitude. In the same manner, it also makes negative
voltages positive.
RF
RI
Vsup+
VOUT
+
VIN
Vsup-
Figure 13. Application Schematic
10.2.1 Design Requirements
The supply voltage must be chosen such that it is larger than the input voltage range and output range. For
instance, this application scales a signal of ±0.5 V to ±1.8 V. Setting the supply at ±12 V is sufficient to
accommodate this application.
10.2.2 Detailed Design Procedure
Determine the gain required by the inverting amplifier using Equation 1 and Equation 2:
VOUT
AV
VIN
1.8
AV
3.6
0.5
(1)
(2)
Once the desired gain is determined, choose a value for RI or RF. [Subscripts should be fixed in the
accompanying figures and equations also.] Choosing a value in the kilohm range is desirable because the
amplifier circuit uses currents in the milliampere range. This ensures the part does not draw too much current.
This example uses 10 kΩ for RI which means 36 kΩ is used for RF. This was determined by Equation 3.
RF
AV
(3)
RI
Copyright © 1976–2018, Texas Instruments Incorporated
Submit Documentation Feedback
Product Folder Links: LM158 LM258 LM258A LM358 LM358A LM358B LM2904 LM2904B LM2904V
19
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM2904, LM2904B, LM2904V
SLOS068V – JUNE 1976 – REVISED SEPTEMBER 2018
www.ti.com
Typical Application (continued)
10.2.3 Application Curve
2
VIN
1.5
VOUT
1
Volts
0.5
0
-0.5
-1
-1.5
-2
0
0.5
1
Time (ms)
1.5
2
Figure 14. Input and Output Voltages of the Inverting Amplifier
11 Power Supply Recommendations
CAUTION
Supply voltages larger than specified in the recommended operating region can
permanently damage the device (see the Absolute Maximum Ratings).
Place 0.1-µF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or highimpedance power supplies. For more detailed information on bypass capacitor placement, see the Layout
section.
12 Layout
12.1 Layout Guidelines
For best operational performance of the device, use good PCB layout practices, including:
• Noise can propagate into analog circuitry through the power pins of the circuit as a whole, as well as the
operational amplifier. Bypass capacitors are used to reduce the coupled noise by providing low-impedance
power sources local to the analog circuitry.
– Connect low-ESR, 0.1-µF ceramic bypass capacitors between each supply pin and ground, placed as
close to the device as possible. A single bypass capacitor from V+ to ground is applicable for singlesupply applications.
• Separate grounding for analog and digital portions of circuitry is one of the simplest and most-effective
methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to ground planes.
A ground plane helps distribute heat and reduces EMI noise pickup. Make sure to physically separate digital
and analog grounds, paying attention to the flow of the ground current.
• To reduce parasitic coupling, run the input traces as far away from the supply or output traces as possible. If
it is not possible to keep them separate, it is much better to cross the sensitive trace perpendicular as
opposed to in parallel with the noisy trace. [Things in parallel never cross, by definition]
• Place the external components as close to the device as possible. Keeping RF and RG close to the inverting
input minimizes parasitic capacitance, as shown in Layout Examples.
• Keep the length of input traces as short as possible. Always remember that the input traces are the most
sensitive part of the circuit.
• Consider a driven, low-impedance guard ring around the critical traces. A guard ring can significantly reduce
leakage currents from nearby traces that are at different potentials.
20
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Product Folder Links: LM158 LM258 LM258A LM358 LM358A LM358B LM2904 LM2904B LM2904V
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM2904, LM2904B, LM2904V
www.ti.com
SLOS068V – JUNE 1976 – REVISED SEPTEMBER 2018
12.2 Layout Examples
Place components close to
device and to each other to
reduce parasitic errors
Run the input traces as far
away from the supply lines
as possible
VS+
RF
OUT1
V+
GND
IN1í
OUT2
VIN
IN1+
IN2í
Ví
IN2+
RG
GND
R IN
Use low-ESR, ceramic
bypass capacitor
Only needed for
dual-supply
operation
GND
VSí
(or GND for single supply)
Ground (GND) plane on another layer
Figure 15. Operational Amplifier Board Layout for Noninverting Configuration
VIN
RIN
RG
+
VOUT
RF
Figure 16. Operational Amplifier Schematic for Noninverting Configuration
Copyright © 1976–2018, Texas Instruments Incorporated
Submit Documentation Feedback
Product Folder Links: LM158 LM258 LM258A LM358 LM358A LM358B LM2904 LM2904B LM2904V
21
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM2904, LM2904B, LM2904V
SLOS068V – JUNE 1976 – REVISED SEPTEMBER 2018
www.ti.com
13 Device and Documentation Support
13.1 Documentation Support
13.1.1 Related Documentation
• Texas Instruments, Circuit Board Layout Techniques.
13.2 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to order now.
Table 1. Related Links
PARTS
PRODUCT FOLDER
ORDER NOW
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
LM158
Click here
Click here
Click here
Click here
Click here
LM158A
Click here
Click here
Click here
Click here
Click here
LM258
Click here
Click here
Click here
Click here
Click here
LM258A
Click here
Click here
Click here
Click here
Click here
LM358
Click here
Click here
Click here
Click here
Click here
LM358A
Click here
Click here
Click here
Click here
Click here
LM358B
(1)
(1)
Click here
Click here
Click here
Click here
Click here
LM2904
Click here
Click here
Click here
Click here
Click here
LM2904B (1)
Click here
Click here
Click here
Click here
Click here
LM2904V
Click here
Click here
Click here
Click here
Click here
Device is currently Preview
13.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
13.4 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
13.5 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
13.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
22
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Copyright © 1976–2018, Texas Instruments Incorporated
Product Folder Links: LM158 LM258 LM258A LM358 LM358A LM358B LM2904 LM2904B LM2904V
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM2904, LM2904B, LM2904V
www.ti.com
SLOS068V – JUNE 1976 – REVISED SEPTEMBER 2018
13.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms and definitions.
14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the mostcurrent data available for the designated devices. This data is subject to change without notice and without
revision of this document. For browser based versions of this data sheet, see the left-hand navigation pane.
Copyright © 1976–2018, Texas Instruments Incorporated
Submit Documentation Feedback
Product Folder Links: LM158 LM258 LM258A LM358 LM358A LM358B LM2904 LM2904B LM2904V
23
PACKAGE OPTION ADDENDUM
www.ti.com
29-Jul-2019
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
5962-87710012A
ACTIVE
LCCC
FK
20
1
TBD
POST-PLATE
N / A for Pkg Type
-55 to 125
596287710012A
LM158FKB
5962-8771001PA
ACTIVE
CDIP
JG
8
1
TBD
A42
N / A for Pkg Type
-55 to 125
8771001PA
LM158
5962-87710022A
ACTIVE
LCCC
FK
20
1
TBD
POST-PLATE
N / A for Pkg Type
-55 to 125
596287710022A
LM158AFKB
5962-8771002PA
ACTIVE
CDIP
JG
8
1
TBD
A42
N / A for Pkg Type
-55 to 125
8771002PA
LM158A
LM158AFKB
ACTIVE
LCCC
FK
20
1
TBD
POST-PLATE
N / A for Pkg Type
-55 to 125
596287710022A
LM158AFKB
LM158AJG
ACTIVE
CDIP
JG
8
1
TBD
A42
N / A for Pkg Type
-55 to 125
LM158AJG
LM158AJGB
ACTIVE
CDIP
JG
8
1
TBD
A42
N / A for Pkg Type
-55 to 125
8771002PA
LM158A
LM158FKB
ACTIVE
LCCC
FK
20
1
TBD
POST-PLATE
N / A for Pkg Type
-55 to 125
596287710012A
LM158FKB
LM158JG
ACTIVE
CDIP
JG
8
1
TBD
A42
N / A for Pkg Type
-55 to 125
LM158JG
LM158JGB
ACTIVE
CDIP
JG
8
1
TBD
A42
N / A for Pkg Type
-55 to 125
8771001PA
LM158
LM258AD
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-25 to 85
LM258A
LM258ADGKR
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU |
CU NIPDAUAG
Level-1-260C-UNLIM
-25 to 85
(M3L, M3P, M3S, M3
U)
LM258ADR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
-25 to 85
LM258A
LM258ADRE4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-25 to 85
LM258A
LM258ADRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-25 to 85
LM258A
LM258AP
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
N / A for Pkg Type
-25 to 85
LM258AP
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
29-Jul-2019
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LM258APE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
-25 to 85
LM258AP
LM258D
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-25 to 85
LM258
LM258DG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-25 to 85
LM258
LM258DGKR
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU |
CU NIPDAUAG
Level-1-260C-UNLIM
-25 to 85
(M2L, M2P, M2S, M2
U)
LM258DGKRG4
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-25 to 85
(M2L, M2P, M2S, M2
U)
LM258DR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
-25 to 85
LM258
LM258DRG3
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-25 to 85
LM258
LM258DRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-25 to 85
LM258
LM258P
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
N / A for Pkg Type
-25 to 85
LM258P
LM258PE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
-25 to 85
LM258P
LM2904AVQDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904AV
LM2904AVQDRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904AV
LM2904AVQPWR
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904AV
LM2904AVQPWRG4
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904AV
LM2904BIDR
PREVIEW
SOIC
D
8
2500
TBD
Call TI
Call TI
-40 to 125
LM2904D
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
LM2904
LM2904DE4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
LM2904
LM2904DG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
LM2904
Addendum-Page 2
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
29-Jul-2019
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LM2904DGKR
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU |
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
(MBL, MBP, MBS, MB
U)
LM2904DGKRG4
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
(MBL, MBP, MBS, MB
U)
LM2904DR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
-40 to 125
LM2904
LM2904DRE4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
LM2904
LM2904DRG3
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
LM2904
LM2904DRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
LM2904
LM2904P
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
N / A for Pkg Type
-40 to 125
LM2904P
LM2904PE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
-40 to 125
LM2904P
LM2904PSR
ACTIVE
SO
PS
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904
LM2904PW
ACTIVE
TSSOP
PW
8
150
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904
LM2904PWR
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
-40 to 125
L2904
LM2904PWRG3
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
L2904
LM2904PWRG4-JF
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904
LM2904QDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
2904Q1
LM2904QDRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
2904Q1
LM2904VQDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904V
LM2904VQDRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904V
LM2904VQPWR
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904V
Addendum-Page 3
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
29-Jul-2019
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LM2904VQPWRG4
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904V
LM358AD
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
LM358A
LM358ADE4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
LM358A
LM358ADG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
LM358A
LM358ADGKR
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU |
CU NIPDAUAG
Level-1-260C-UNLIM
0 to 70
(M6L, M6P, M6S, M6
U)
LM358ADGKRG4
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
(M6L, M6P, M6S, M6
U)
LM358ADR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
0 to 70
LM358A
LM358ADRE4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
LM358A
LM358ADRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
LM358A
LM358AP
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
N / A for Pkg Type
0 to 70
LM358AP
LM358APE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
0 to 70
LM358AP
LM358APW
ACTIVE
TSSOP
PW
8
150
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
L358A
LM358APWR
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
0 to 70
L358A
LM358APWRG4
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
L358A
LM358BIDR
PREVIEW
SOIC
D
8
2500
TBD
Call TI
Call TI
-40 to 85
LM358D
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
LM358
LM358DG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
LM358
LM358DGKR
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU |
CU NIPDAUAG
Level-1-260C-UNLIM
0 to 70
(M5L, M5P, M5S, M5
U)
Addendum-Page 4
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
29-Jul-2019
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LM358DGKRG4
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
(M5L, M5P, M5S, M5
U)
LM358DR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
0 to 70
LM358
LM358DRE4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
LM358
LM358DRG3
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
0 to 70
LM358
LM358DRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
LM358
LM358P
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
N / A for Pkg Type
0 to 70
LM358P
LM358PE3
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU SN
N / A for Pkg Type
0 to 70
LM358P
LM358PE4
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
N / A for Pkg Type
0 to 70
LM358P
LM358PSR
ACTIVE
SO
PS
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
L358
LM358PW
ACTIVE
TSSOP
PW
8
150
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
L358
LM358PWR
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
0 to 70
L358
LM358PWRG3
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
0 to 70
L358
LM358PWRG4
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
L358
LM358PWRG4-JF
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
L358
PLM2904BIDR
ACTIVE
SOIC
D
8
2500
TBD
Call TI
Call TI
-40 to 125
PLM358BIDR
ACTIVE
SOIC
D
8
2500
TBD
Call TI
Call TI
-40 to 85
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
Addendum-Page 5
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
29-Jul-2019
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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