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LM3633YFQR

LM3633YFQR

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    WFBGA20

  • 描述:

    IC LED DRIVER RGLTR DIM 20DSBGA

  • 数据手册
  • 价格&库存
LM3633YFQR 数据手册
Sample & Buy Product Folder Support & Community Tools & Software Technical Documents LM3633 SNVS867 – JUNE 2014 LM3633 Complete Lighting Power Solution for Smartphone Handsets Check for Samples: LM3633 1 Features 3 Description • The LM3633 11-bit LED driver provides highperformance backlight dimming for 1, 2, or 3 parallel high-voltage LED strings while delivering up to 90% efficiency. The boost converter with integrated 1-A, 40-V MOSFET automatically adjusts to LED forward voltage to minimize headroom voltage and effectively improve LED efficiency. Drives Three Parallel High-Voltage LED Strings for Display and Keypad Lighting High-Voltage Strings Capable of up to 40-V Output Voltage and up to 90% Efficiency Up to 30-mA per Current Sink (Both Backlight and Indicator) 11-Bit High-Voltage LED Dimming PWM Input for Content Adjustable Brightness Control (CABC) Integrated 1-A/40-V MOSFET Adaptive Boost Output to LED Voltages Six Low-Voltage Current Sinks for Indicator LEDs Integrated Charge Pump for Improved Efficiency and VIN Operating Range Internal Pattern Generation Engine for Each Indicator LED Fully Configurable LED Grouping and Control Four Programmable Overvoltage Protection Thresholds (16 V, 24 V, 32 V, and 40 V) Programmable 500-kHz and 1-MHz Switching Frequency Overcurrent Protection Thermal Shutdown Protection 27 mm2 Total Solution Size 1 • • • • • • • • • • • • • • • Power Source for Smart Phone Illumination Display, Keypad and Indicator Illumination RGB Indicator Driver space Simplified Schematic L VIN An additional feature is a Pulse Width Modulation (PWM) control input for content adjustable backlight control, which can be used to control any highvoltage current sink. The LM3633 is fully programmable via an I2Ccompatible interface. The device operates over a 2.7V to 5.5-V input voltage range and a −40°C to 85°C temperature range. Device Information(1) PART NUMBER LM3633 2 Applications • • • The LM3633 is a complete power source for backlight, keypad, and indicator LEDs in smartphone handsets. The high-voltage inductive boost converter provides the power for three parallel LED strings (HVLED1, HVLED2 and HVLED3). The integrated charge pump provides the bias for the six low-voltage indicator LEDs (LVLED1-LVLED6). All low-voltage current sinks can have a programmable pattern modulated onto their output current for a wide variety of blinking patterns. D1 2.7V to 5.5V Dual String Efficiency vs VIN L=22µH, fSW=1MHz COUT 92% SW LM3633 90% OVP 88% C+ CP C- SDA SDA SCL SCL HWEN HVLED1 HVLED2 HVLED3 HWEN CPOUT CPOUT PWM PWM LVLED1 LVLED2 LVLED3 EFFICIENCY (%) IN BODY SIZE (MAX) 2.04 mm x 1.78 mm (1) For all available packages, see the orderable addendum at the end of the datasheet. VOUT up to 40V CIN PACKAGE DSBGA (20) 86% 84% 82% 80% 3s3p 78% 76% 4s3p 74% 5s3p 72% 6s3p 70% LVLED4 LVLED5 LVLED6 2.5 3 3.5 4 4.5 5 5.5 VIN (V) PGND C002 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. LM3633 SNVS867 – JUNE 2014 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 6.7 4 4 4 4 5 7 8 Absolute Maximum Ratings ..................................... Handling Ratings ...................................................... Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Timing Requirements ................................................ Typical Characteristics .............................................. 7.4 Device Functional Modes ....................................... 12 7.5 Register Descriptions .............................................. 24 8 Applications and Implementation ...................... 33 8.1 Application Information .......................................... 33 8.2 Typical Application .................................................. 33 8.3 Initialization Set Up ................................................. 45 9 Power Supply Recommendations...................... 48 10 Layout................................................................... 48 10.1 Layout Guidelines (Boost) .................................... 48 10.2 Layout Guidelines (Charge Pump)........................ 51 10.3 Layout Example ................................................... 52 11 Device and Documentation Support ................. 53 11.1 11.2 11.3 11.4 Detailed Description ............................................ 10 7.1 Overview ................................................................ 10 7.2 Functional Block Diagram ...................................... 10 7.3 Feature Description ................................................ 10 Device Support...................................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 53 53 53 53 12 Mechanical, Packaging, and Orderable Information ........................................................... 53 4 Revision History 2 Date Revision Notes June 2014 * Initial release Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 LM3633 www.ti.com SNVS867 – JUNE 2014 5 Pin Configuration and Functions DSBGA (YFQ) 20 PINS Bottom View Top View A B C D E 4 4 3 3 2 2 1 1 E D C B A Pin Functions PIN DESCRIPTION NAME NUMBER C− A1 Integrated charge pump flying capacitor negative pin. Connect a 1-µF ceramic capacitor between C+ and C−. C+ A2 Integrated charge pump flying capacitor positive pin. Connect a 1-µF ceramic capacitor between C+ and C−. CPOUT A3 Integrated charge pump output pin. Bypass CPOUT to GND with a 1-µF ceramic capacitor. IN A4 Input voltage connection. Bypass IN to GND with a minimum 2.2-µF ceramic capacitor. HVLED1 B1 Input pin to high-voltage current sink 1 (40 V max). The boost converter regulates the minimum of HVLED1, HVLED2 and HVLED3 to VHR. SDA B2 Serial data connection for I2C-Compatible Interface. OVP B3 Overvoltage sense input. Connect OVP to the positive pin of the inductive boost output capacitor (COUT). GND B4 Ground HVLED2 C1 Input pin to high-voltage current sink 2 (40 V max). The boost converter regulates the minimum of HVLED1, HVLED2 and HVLED3 to VHR. SCL C2 Serial clock connection for I2C-Compatible Interface. PWM C3 PWM brightness control input for CABC operation. PWM is a high-impedance input and cannot be left floating. SW C4 Drain connection for the internal NFET. Connect SW to the junction of the inductor and the Schottky diode anode. HVLED3 D1 Input pin to high-voltage current sink 3 (40 V max). The boost converter regulates the minimum of HVLED1, HVLED2 and HVLED3 to VHR. HWEN D2 Hardware enable input. Drive this pin high to enable the device. Drive this pin low to force the device into a low power shutdown. HWEN is a high-impedance input and cannot be left floating. LVLED6 D3 Low-voltage current sink 6 LVLED5 D4 Low-voltage current sink 5 LVLED1 E1 Low-voltage current sink 1 LVLED2 E2 Low-voltage current sink 2 LVLED3 E3 Low-voltage current sink 3 LVLED4 E4 Low-voltage current sink 4 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 3 LM3633 SNVS867 – JUNE 2014 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX VIN to GND −0.3 6 VSW, VOVP, VHVLED1, VHVLED2, VHVLED3 to GND −0.3 45 VSCL, VSDA, VPWM to GND −0.3 6 VHWEN, VCPOUT to GND, VC–, VC+ −0.3 6 VLVLED1- VLVLED6, to GND −0.3 UNIT V 6 Continuous power dissipation Internally Limited Junction temperature (TJ-MAX) 150 (1) °C Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability. 6.2 Handling Ratings MIN Tstg (1) (2) Electrostatic discharge UNIT °C −65 150 Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1) −1000 1000 Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2) −250 250 Storage temperature range V(ESD) MAX V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN VIN to GND VSW, VOVP, VHVLED1, VVHLED2, VVHLED3 to GND, VPWM, VHWEN, VSDA, VSCL VLVLED1- VLVLED6 to GND Junction temperature (TJ) (1) (2) (1) (2) NOM MAX 2.7 5.5 0 40 0 6 −40 125 UNIT V °C Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ = 140°C (typ.) and disengages at TJ= 125°C (typ.). In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP = 125°C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the part/package in the application (θJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (θJA × PD-MAX). 6.4 Thermal Information THERMAL METRIC (1) RθJA (1) 4 Thermal resistance junction-to-ambient DSBGA (20 PINS) 55.3 UNIT °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 LM3633 www.ti.com SNVS867 – JUNE 2014 6.5 Electrical Characteristics Limits apply over the full operating ambient temperature range (−40°C ≤ TA ≤ 85°C) and VIN = 3.6 V, unless otherwise specified. (1) (2) PARAMETER TEST CONDITIONS MIN TYP MAX 1 5.5 UNIT SUPPLY VOLTAGE (IN PIN) ISHDN Shutdown current 2.7 V ≤ VIN ≤ 5.5 V, HWEN = GND µA THERMAL SHUTDOWN Thermal shutdown TSD 140 Hysteresis °C 15 BOOST CONVERTER AND HVLED IHVLED(1/2/3) IMATCH_HV Output current regulation (HVLED1, HVLED2 or HVLED3) HVLED1 to HVLED2 or HVLED3 matching (3) Full-scale current = 20.2 mA, PWM off, brightness code = max, exponential mapping, auto headroom off, HVLED1 Bank A, HVLED2/3 Bank B Full-scale current = 20.2 mA, PWM off, brightness code = max, exponential mapping, auto headroom off, HVLED1 Bank A, HVLED2/3 Bank B PWM off, exponential mapping, auto headroom off HVLED1,2,3 = Bank A, 2.7 V ≤ VIN ≤ 5.5 V 18.38 (–9%) 20.2 22.02 (9%) TA = 25°C –3.4% ±2.0% 3.2% TA = 25°C, 3.0 V ≤ VIN ≤ 4.5 V –3.6% TA = 25°C 3.4% ±2.0% 2.7 V ≤ VIN ≤ 5.5 V, ILED = 20.2 mA –2.5% 2.5% TA = 25°C, ILED = 20.2 mA –2.0% 1.7% 2.7 V ≤ VIN ≤ 5.5 V ILED = 500 µA –8.5% 8.5% ILED_MIN Minimum LED current Full-scale current = 20.2 mA, Exponential Mapping 6.0 VREG_CS Regulated current sink headroom voltage Auto headroom off, TA = 25°C 400 VHR_HV Minimum current sink headroom voltage for HVLED current sinks ILED = 95% of nominal, fullscale current = 20.2 mA, auto headroom off RDSON NMOS switch on resistance ISW = 500 mA, TA = 25°C ICL_BOOST NMOS switch current limit VOVP Output overvoltage protection fSW Switching frequency DMAX Maximum duty cycle mA 2.7 V ≤ VIN ≤ 5.5 V µA 285 TA = 25°C mV 190 Ω 0.3 880 TA = 25°C 1120 1000 ON threshold OVP select bits = 11 2.7 V ≤ VIN ≤ 5.5 V TA = 25°C 40 Hysteresis TA = 25°C 1 38.75 Boost frequency select bit = 2.7 V ≤ VIN ≤ 5.5 V 0 TA = 25°C 450 Boost frequency select bit = 2.7 V ≤ VIN ≤ 5.5 V 1 TA = 25°C 900 mA 41.1 V 550 500 1100 kHz 1000 2.7 V ≤ VIN ≤ 5.5 V 94% CHARGE PUMP AND LVLED ILVLED(1/2/3/4/5/6) (1) (2) (3) Full-scale current = 20.2 Output current regulation mA, brightness code = (low-voltage current sinks) 0xFF 2.7 V ≤ VIN ≤ 5.5 V 18.38 20.2 22.02 mA All voltages are with respect to the potential at the GND pin. Minimum and Maximum limits are verified by design, test, or statistical analysis. Typical (Typ) numbers are not verified, but do represent the most likely norm. Unless otherwise specified, conditions for typical specifications are: VIN = 3.6 V and TA = 25°C. LED current sink matching in the high-voltage current sinks (HVLED1 through HVLED3) is given as the maximum matching value between any two current sinks, where the matching between any two high voltage current sinks (X and Y) is given as (IHVLEDX ( or IHVLEDY) - IAVE(X-Y))/(IAVE(X-Y)) x 100. In this test all three HVLED current sinks are assigned to Bank A. Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 5 LM3633 SNVS867 – JUNE 2014 www.ti.com Electrical Characteristics (continued) Limits apply over the full operating ambient temperature range (−40°C ≤ TA ≤ 85°C) and VIN = 3.6 V, unless otherwise specified.(1)(2) PARAMETER TEST CONDITIONS IMATCH_LV LVLED current sink matching (4) Full-scale current = 20.2 mA VHR_LV Minimum current sink headroom voltage for LVLED current sinks ILED = 95% of nominal, fullscale current = 20.2 mA VGTH Threshold for gain transition VCPOUT Charge Pump Output Voltage ICL_PUMP Charge pump current limit ROUT 2.7 V ≤ VIN ≤ 5.5 V MIN TYP −3.1% MAX UNIT 2% 125 TA = 25°C 2.7 V ≤ VIN ≤ 5.5 V 80 65 mV 190 TA = 25°C 125 2X Gain TA = 25°C 4.42 1X Gain, output referred 3 V ≤ VIN ≤ 5.5 V 2X Gain TA = 25°C 240 Charge pump output resistance 1X Gain TA = 25°C 1.1 VHWEN_L Logic low 2.7 V ≤ VIN ≤ 5.5 V 0 0.4 VHWEN_H Logic High 2.7 V ≤ VIN ≤ 5.5 V 1.2 VIN VPWM_L Input logic low 2.7 V ≤ VIN ≤ 5.5 V 0 400 VPWM_H Input logic high 2.7 V ≤ VIN ≤ 5.5 V 1.36 VIN tPWM Minimum PWM input pulse 2.7 V ≤ VIN ≤ 5.5 V, PWM Zero Detect Enabled 180 V 350 mA Ω HWEN INPUT V PWM INPUT 0.75 mV µs I2C-COMPATIBLE VOLTAGE SPECIFICATIONS (SCL, SDA) VIL Input logic low 2.7 V ≤ VIN ≤ 5.5 V 0 400 VIH Input logic high 2.7 V ≤ VIN ≤ 5.5 V 1.35 VIN V VOL Output logic low (SDA) 2.7 V ≤ VIN ≤ 5.5 V, ILOAD = 3 mA 400 mV (4) 6 mV LED current sink matching in the low-voltage current sinks (LVLED1 through LVLED3 or LVLED4 through LVLED6) is given as the maximum matching value between any two current sinks, where the matching between any two low voltage current sinks (X and Y) is given as (ILVLEDX ( or ILVLEDY) - IAVE(X-Y))/(IAVE(X-Y)) x 100. In this test LVLED1-3 current sinks are assigned to Bank C and LVLED4-6 are assigned to Bank F. Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 LM3633 www.ti.com SNVS867 – JUNE 2014 6.6 Timing Requirements Limits apply over the full operating ambient temperature range (−40°C ≤ TA ≤ 85°C) and VIN = 3.6 V, unless otherwise specified. (1) (2) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT I2C-COMPATIBLE TIMING SPECIFICATIONS (SCL, SDA) (3), Figure 1 t1 SCL (Clock Period) 2.7 V ≤ VIN ≤ 5.5 V 2.5 t2 Data In setup time to SCL high 2.7 V ≤ VIN ≤ 5.5 V 100 t3 Data out stable after SCL low 2.7 V ≤ VIN ≤ 5.5 V 0 t4 SDA low setup time to SCL low (Start) 2.7 V ≤ VIN ≤ 5.5 V 100 t5 SDA high hold time after SCL high (Stop) 2.7 V ≤ VIN ≤ 5.5 V 100 µs ns INTERNAL POR THRESHOLD AND HWEN TIMING SPECIFICATION VPOR POR reset release voltage threshold tHWEN First I2C start pulse after HWEN high VIN ramp time = 100 μs 1.7 2.1 VIN ramp time = 100 μs, TA = 25°C 1.9 POR reset complete, 2.7 V ≤ VIN ≤ 5.5 V 20 POR reset complete, TA = 25°C (1) (2) (3) V µs 5 All voltages are with respect to the potential at the GND pin. Minimum and Maximum limits are verified by design, test, or statistical analysis. Typical (Typ) numbers are not verified, but do represent the most likely norm. Unless otherwise specified, conditions for typical specifications are: VIN = 3.6 V and TA = 25°C. SCL and SDA must be glitch-free in order for proper brightness control to be realized. t1 SCL t5 t4 SDA_IN t2 SDA_OUT t3 2 Figure 1. I C-Compatible Interface Timing Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 7 LM3633 SNVS867 – JUNE 2014 www.ti.com 6.7 Typical Characteristics 5 0.55 4.5 0.5 Shutdown Current (uA) 4 Rdson ( ) 0.45 0.4 0.35 0.3 0.2 -50 -25 0 25 50 75 100 3 2.5 2 1.5 1 VIN=2.7V VIN=3.6V VIN=5.5V 0.25 3.5 VIN=2.7V VIN=3.6V VIN=5.5V 0.5 0 -50 125 -25 0 Temperature (ƒC) 25 50 75 100 125 Temperature (ƒC) C001 C001 Figure 2. NMOS RDSON vs Temperature Figure 3. Shutdown IQ vs Temperature 1040 0.26 1020 0.24 0.22 VHR_HV (V) OCP (mA) 1000 980 960 940 0.2 0.18 0.16 0.14 VIN=2.7V VIN=3.6V VIN=5.5V 920 900 -50 -25 0 25 50 75 100 VIN=2.7V VIN=3.6V VIN=5.5V 0.12 0.1 125 -50 -25 0 Temperature (ƒC) 25 50 75 100 125 Temperature (ƒC) C001 C001 Figure 5. VHR_HV vs Temperature 1000 0.16 900 0.15 800 0.14 VGTH (V) CP Rout (m ) Figure 4. Boost OCP vs Temperature 700 600 0.13 0.12 VIN=2.7V VIN=3.6V VIN=5.5V 500 400 -50 -25 0 25 50 75 100 0.1 125 -50 Temperature (ƒC) -25 0 25 50 75 100 125 Temperature (ƒC) C001 Figure 6. Charge Pump ROUT vs Temperature 8 VIN=2.7V VIN=3.6V VIN=5.5V 0.11 C001 Figure 7. Low Voltage LED VGTH vs Temperature Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 LM3633 www.ti.com SNVS867 – JUNE 2014 4.44 85 4.435 80 4.43 75 VHR_LV (mV) VCPOUT (V) Typical Characteristics (continued) 4.425 4.42 4.415 70 65 VIN=2.7V VIN=3.6V VIN=5.5V 60 VIN=2.7V 4.41 55 -50 -25 0 25 50 75 100 125 -50 -25 0 Temperature (ƒC) 25 50 75 100 125 Temperature (ƒC) C001 C001 Figure 8. Charge Pump 2X Mode VCPOUT vs Temperature Figure 9. VHR_LV vs Temperature 1.4 1.2 1.2 1 PWM Vil (V) PWM Vih (V) 1 0.8 0.6 0.8 0.6 0.4 0.4 VIN=2.7V VIN=3.6V VIN=5.5V 0.2 0 -50 -25 0 25 50 75 100 VIN=2.7V VIN=3.6V VIN=5.5V 0.2 0 125 Temperature (ƒC) -50 -25 0 25 50 75 100 125 Temperature (ƒC) C001 Figure 10. PWM VIH vs Temperature C001 Figure 11. PWM VIL vs Temperature Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 9 LM3633 SNVS867 – JUNE 2014 www.ti.com 7 Detailed Description 7.1 Overview The LM3633 provides the power for three high-voltage LED strings and six low-voltage LEDs. The three highvoltage LED strings are powered from an integrated boost converter. The six low-voltage LEDs are powered from an integrated 2X charge pump. The device is programmable over an I2C-compatible interface. Additional features include a Pulse Width Modulation (PWM) input for content adjustable brightness control and 6 programmable pattern generators for RGB and indicator blinking functions on the low-voltage LEDs. 7.2 Functional Block Diagram SW IN Programmable Overvoltage Protection (16V, 24V, 32V, 40V) HWEN Hardware Enable, Reference and Thermal Shutdown 1A Current Limit Boost Converter OVP Programmable 500kHz/1MHz Switching Frequency LED String Open/Short Detection High-Voltage Current Sinks HVLED1 HVLED2 Backlight LED Control 1. 5-bit Full-Scale Current Select HVLED3 2. 11-bit brightness adjustment GND 3. Linear/Exponential Mapping C+ 4. LED Current Ramping PWM 2X Charge Pump Internal Low Pass Filter Gain Control (Automatic, 1X, 2X) 6 x Programmable Pattern Generators SDA I2C Compatible Interface SCL Indicator LED Control 1. 5-bit Full-Scale Current Select 2. 8-bit Brightness Adjustment 3. Linear/Exponential Mapping C- CPOUT Low Voltage Current Sinks LVLED1 LVLED2 LVLED3 LVLED4 LVLED5 LVLED6 4, LED Current Ramping 7.3 Feature Description 7.3.1 Control Bank Mapping Control of the LM3633’s current sinks is not done directly, but through the programming of Control Banks. The current sinks are then assigned to the programmed Control Bank. This allows a wide variety of current control possibilities where LEDs can be grouped and controlled via specific Control Banks (see Figure 12 and Figure 17). 10 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 LM3633 www.ti.com SNVS867 – JUNE 2014 Feature Description (continued) 7.3.1.1 High-Voltage Control Banks (A and B) There are 2 high-voltage control banks (A and B). All three high-voltage current sinks can be assigned to either Control Bank A or Control Bank B. Assigning all three current sinks to the same control bank allows for better LED current matching. Assigning a current sink to a different control bank allows for independent current sink programming. The high-voltage control bank mapping is done via bits [2:0] of the HVLED Current Sink Output Configuration register (see Table 5). 7.3.1.2 Low-Voltage Control Banks (C, D, E, F, G, and H) There are 6 low-voltage control banks (C, D, E, F, G, and H). LVLED1 to LVLED3 can be assigned to control bank C or can be assigned to independent control banks (LVLED2 to Control Bank D and LVLED3 to Control Bank E). LVLED4 to LVLED6 can be assigned to control bank F or can be assigned to independent control banks (LVLED5 to Control Bank G and LVLED6 to Control Bank H). Assigning low-voltage current sinks to the same control bank allows for the best matching between LEDs. Assigning low-voltage current sinks to different control banks allows for each current sink to be programmed with different current levels. When the pattern generator is disabled the low-voltage ramp up/down times (Start-up/Shutdown and Run-Time) are controlled by the LVLED Controls C to E and Controls F to H Ramp Time register (see Table 11). 7.3.2 Pattern Generator The LM3633 contains 6 independently programmable pattern generators for each low-voltage control bank. Each pattern generator can have its own separate pattern: delays from turnon, high and low-current settings, and pattern high and low times. There are two sets of rise and fall time control registers. One set is assigned to Control Banks C to E and the other set is assigned to Control Banks F to H. All other settings are independent (see Figure 17). 7.3.3 PWM Input The PWM input which can be assigned to either of the high-voltage control banks. When assigned to a control bank, the programmed current in the control bank becomes a function of the duty cycle (DPWM) at the PWM input and the control bank brightness setting. When PWM is disabled, DPWM is equal to one. 7.3.4 HWEN Input HWEN is the global hardware enable to the LM3633. HWEN must be pulled high to enable the device. HWEN is a high-impedance input so it cannot be left floating. When HWEN is pulled low, the LM3633 is placed in shutdown, and all the registers are reset to their default state. 7.3.5 Thermal Shutdown The LM3633 contains a thermal shutdown protection. In the event the die temperature reaches 140°C (typ), the boost, charge pump, and current sinks shut down until the die temperature drops to typically 125°C (typ). Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 11 LM3633 SNVS867 – JUNE 2014 www.ti.com 7.4 Device Functional Modes 7.4.1 High-Voltage LED Control Usable Stimulus Control Banks Outputs (Assigned to Control banks) Environmental Stimulus HVLED1 HVLED1 HVLED2 HVLED2 HVLED3 HVLED3 BANK A PWM PWM Control Internal Low Pass Filter BANK B SDA SCL I2C Compatible Interface High-Voltage LED Assignment Control Bank Configuration Boost Converter Configuration Startup/Shutdown Ramp Configuration Run-Time Ramp Configuration Brightness Control Figure 12. High-Voltage Functional Control Diagram 7.4.1.1 High-Voltage Boost Converter The high-voltage boost converter provides power for the three high-voltage current sinks (HVLED1, HVLED2 and HVLED3). The boost circuit operates using a 4.7-µH to 22-µH inductor and a 1-µF output capacitor. The selectable 500-kHz or 1-MHz switching frequency allows for use of small external components and provides for high boost-converter efficiency. HVLED1, HVLED2, and HVLED3 feature an adaptive current regulation scheme where the feedback point (HVLED1, HVLED2, and HVLED3) regulates the LED headroom voltage to VHR_HV. When there are different voltage requirements in the high-voltage LED strings (string mismatch), the LM3633 regulates the feedback point of the highest voltage string to VHR_HV and drops the excess voltage of the lowervoltage string across the lower string(s) current sink. 7.4.1.2 High-Voltage Current Sinks (HVLED1, HVLED2 and HVLED3) HVLED1, HVLED2, and HVLED3 control the current in the high-voltage LED strings as configured by Control Bank A or Control Bank B. Each Control Bank has 5-bit full-scale current programmability and 11-bit brightness control. High-voltage current sinks are assigned to a control bank through the HVLED Current Sink Output Configuration register (see Table 5). 7.4.1.3 High-Voltage Current String Biasing Each high-voltage current string can be powered from the LM3633 boost output (COUT) or from an external source. The feedback enable bits (HVLED Current Sink Feedback Enables register bits [2:0]) determine where the high-voltage current string anodes are connected. When set to '1' (default) the high-voltage current sink inputs are included in the boost feedback loop. This allows the boost converter to adjust its output voltage to maintain the LED headroom voltage VHR_HV at the current sink input. When powered from alternate sources the feedback enable bits should be set to '0'. This removes the particular current sink from the boost feedback loop. In these configurations the application must ensure that the headroom voltage across the high-voltage current sink is high enough to prevent the current sink from going into dropout (see the Figure 63 for data on the high-voltage LED current vs VHR_HV). Setting the HVLED Current Sink Feedback Enables register bits also determines triggering of the shorted highvoltage LED String Fault flag (see Fault Flags/Protection Features section). 12 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 LM3633 www.ti.com SNVS867 – JUNE 2014 Device Functional Modes (continued) 7.4.1.4 Boost Switching-Frequency Select The LM3633 boost converter has two switching frequency settings. The switching frequency setting is controlled via the Boost Frequency Select bit (bit 0 in the Boost Control register). Operating at the 500-kHz switching frequency results in better efficiency under lighter load conditions due to the decreased switching losses. In this mode the inductor must be between 10 µH and 22 µH. Operating at the 1-MHz switching frequency results in better efficiency under higher load conditions due to in lower conduction losses in the MOSFETs and inductor. In this mode the inductor can be between 4.7 µH and 22 µH. 7.4.1.5 Automatic Switching Frequency Shift The LM3633 has an automatic frequency-select mode (bit 3 in the Boost Control register) to optimize the frequency vs load dependent losses. In Auto-Frequency mode the boost converter switching frequency is changed based on the high-voltage LED current. The threshold (Control A and Control B brightness code) at which the frequency switchover occurs is programmable via the Auto-Frequency Threshold register. The AutoFrequency Threshold register contains an 8-bit code which is compared to the 8 MSBs of the brightness code. When the brightness code is greater than the Auto-Frequency Threshold value the boost converter switching frequency is 1 MHz. When the brightness code is less than or equal to the Auto-Frequency Threshold register the boost converter switching frequency is 500 kHz. The default value in the Auto-Frequency Threshold register is set for the default full-scale current setting (20.2 mA). Figure 13 shows the LED efficiency improvement (3p5s LED configuration with a 4.7-μH inductor) when the autofrequency feature is enabled. When the LED brightness is less than or equal to 0x6C, the switching frequency is 500 kHz, and it improves the LED efficiency by up to 6%. When the LED brightness is greater than 0x6C, the switching frequency is 1 MHz, and it improves LED efficiency by up to 2.2%. Figure 13. Auto-Frequency Boost Efficiency Improvement Table 1 summarizes the general recommendations for auto-frequency threshold setting vs inductance values and LED string configurations. These are general recommendations — the optimum auto-frequency threshold setting should be evaluated for each application Table 1. Auto-Frequency Threshold Settings THREE STRING TWO STRING INDUCTOR (µH) AUTO-FREQUENCY THRESHOLD PEAK EFFICIENCY IMPROVEMENT (%) PEAK CONFIGURATION AUTOFREQUENCY THRESHOLD 4.7 6C 2.2 3p5s AC 1.1 2p6s 10 74 1.7 3p4s B4 1.3 2p5s 22 7C 0.7 3p3s BC 0.7 2p4s PEAK EFFICIENCY IMPROVEMENT(%) PEAK CONFIGURATION Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 13 LM3633 SNVS867 – JUNE 2014 www.ti.com 7.4.1.6 Brightness Register Current Control The Brightness Register Current Control allows simple user-adjustable current control by writing directly to the appropriate control bank brightness register. The current for Control Bank A and B is a function of the full-scale LED current, the 11-bit code in the respective brightness register, and the PWM input duty cycle (if PWM is enabled). The Control Bank A and B brightness should always be written with LSBs first and MSBs last. 7.4.1.6.1 8-Bit Control (Preferred) The preferred operating mode is to control the high-voltage LED brightness by setting the Control Bank LSB register (3 LSBs) to zero, using only the Control Bank MSB register (8 MSBs). In 8-bit control mode the LM3633 controls the 3 LSBs to ramp the high-voltage LED current using all 11 bits. 7.4.1.6.2 11-Bit Control In this mode of operation, both Control Bank LSB and MSB registers must be written whenever a change in Brightness is required. The high-voltage LED current does not change until the Control Bank MSB register is written. If the brightness change affects only the 3 LSBs, the Control Bank MSB register (8 MSBs) must be rewritten to change the high-voltage LED current. 7.4.1.7 PWM Control The LM3633 PWM input can be enabled for Control Bank A or B (see Table 21). Once enabled, the LED current becomes a function of the code in the Control Brightness registers and the PWM input-duty cycle. The PWM input accepts a logic level voltage and internally filters it to an analog-control voltage. This results in a linear response of duty cycle to current, where 100% duty cycle corresponds to the programmed brightness code multiplied by the Full-Scale Current setting. Analog Domain PWM Input LPF polarity To Assigned High Voltage Current Sinks Full-Scale Current Control Digital Domain DAC Backlight Digital LED Control Block Full-Scale Current Select Brightness Setting Exponential or Linear Mapping Startup/Shutdown Ramp Generator Runtime Ramp Generator Figure 14. PWM Input Architecture 7.4.1.7.1 PWM Input Frequency Range The usable input frequency range for the PWM input is governed on the low end by the cutoff frequency of the internal low-pass filter (540 Hz, Q = 0.33) and on the high end by the propagation delays through the internal logic. For frequencies below 2 kHz the current ripple begins to become a larger portion of the DC LED current. Additionally, at lower PWM frequencies the boost output voltage ripple increases, causing a non-linear response from the PWM duty cycle to the average LED current due to the response time of the boost and current-sink dropout. For the best response of current vs. duty cycle, the PWM input frequency should be kept between 2 kHz and 100 kHz. 14 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 LM3633 www.ti.com SNVS867 – JUNE 2014 7.4.1.7.2 PWM Input Polarity The PWM Input can be set for active low polarity, where the LED current is a function of the negative duty cycle. This is set via the PWM Configuration register (see Table 21). 7.4.1.7.3 PWM Zero Detection The LM3633 incorporates a feature to detect when the PWM input is near zero. When this feature is enabled the minimum PWM input pulse must be greater than tPWM (see Electrical Characteristics). Bit 3 in the PWM Configuration register is used to enable or disable PWM zero detection. 7.4.1.8 Start-up/Shutdown Ramp The high-voltage LED start-up and shutdown ramp times are independently programmable in the Control A and Control B Start-Up/Shutdown Ramp Time register (see Table 7). There are 16 different start-up and 16 different shutdown times. The start-up times can be programmed independently from the shutdown times, but each Control bank is not independently programmable. The start-up ramp time is the period from when the Control Bank is enabled to when the LED current reaches its initial set point. The shutdown ramp time is the period from when the Control Bank is disabled to when the LED current reaches 0. 7.4.1.9 Run-Time Ramp Current ramping from one brightness level to the next is programmed via the Control A and Control B Run-Time Transition Time register (see Table 9). There are 16 different ramp-up times and 16 different ramp-down times. The ramp-up time can be programmed independently from the ramp-down time, but each Control Bank cannot be independently programmed. For example, programming a ramp-up or ramp-down time is a global setting for all high-voltage LED Control Banks. 7.4.1.10 High-Voltage Control A/B Ramp Select The LM3633 provides three options for configuring Control A and Control B ramp times. When the run-time ramp select bits are set to 00 the control bank uses both the start-up/shutdown and run-time ramp times. When the run-time ramp select bits are set to 01 the control bank uses the start-up/shutdown ramp times for both startup/shutdown and run-time. When the run-time ramp select bits are set to 1x the control bank uses a zero µsec run-time ramp. 7.4.1.11 LED Current Mapping Modes All control banks can be programmed for either exponential or linear mapping modes (see Figure 19). These modes determine the transfer characteristic of backlight code to LED current. Independent mapping of Control Bank A and B is not allowed; both banks use the same mapping mode. 7.4.1.12 Exponential Mapping In Exponential Mapping Mode the current ramp (either up or down) appears to the human eye as a more uniform transition than the linear ramp. This is due to the logarithmic response of the eye. 7.4.1.12.1 8-Bit Code Calculation In 8-bit Exponential Mapping Mode the brightness code-to-backlight current transfer function is given by the equation: ILED = ILED_FULLSCALE x 0.85 (44 - Code + 1 5.8181818 ) x DPWM (1) Where ILED_FULLSCALE is the full-scale LED current setting (see Table 13), Code is the 8-bit brightness code in the Control Brightness MSB register and DPWM is the PWM Duty Cycle. 7.4.1.12.2 11-Bit Code Calculation In 11-bit Exponential Mapping Mode the brightness code-to-backlight current transfer function is given by the equation: Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 15 LM3633 SNVS867 – JUNE 2014 www.ti.com ILED = ILED_FULLSCALE x 0.85 Code +1 8 (44 - 5.8181818 ) x DPWM (2) Where ILED_FULLSCALE is the full-scale LED current setting (see Table 13), Code is the 11-bit brightness code in the Control Brightness MSB and LSB registers and DPWMis the PWM Duty Cycle. 7.4.1.13 Linear Mapping In Linear Mapping Mode the brightness code-to-backlight current has a linear relationship. 7.4.1.13.1 8-Bit Code Calculation In Linear Mapping Mode the brightness code-to-backlight current has a linear relationship and follows the equation: ILED = ILED_FULLSCALE x 1 x Code x D PWM 255 (3) Where ILED_FULLSCALE is the full-scale LED current setting, Code is the 8-bit brightness code in the Control Brightness MSB register and DPWMis the PWM Duty Cycle. 7.4.1.13.2 11-Bit Code Calculation In Linear Mapping Mode the brightness code-to-backlight current has a linear relationship and follows the equation: ILED = ILED_FULLSCALE x 1 x Code x D PWM 2047 (4) Where ILED_FULLSCALE is the full-scale LED current setting, Code is the 11-bit brightness code in the Control Brightness MSB and LSB registers and DPWMis the PWM Duty Cycle. 21.00 21 Exponential Linear 18.00 15 LED CURRENT (mA) LED CURRENT (mA) 15.00 12.00 9.00 6.00 12 9 6 3.00 3 0.00 0 2048 1792 1536 1280 1024 768 512 BRIGHTNESS CODE C001 Figure 15. LED Current Mapping Modes (8-bit) 256 0 256 224 192 160 128 96 64 32 0 BRIGHTNESS CODE 16 Exponential Linear 18 C001 Figure 16. LED Current Mapping Modes (11-bit) Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 LM3633 www.ti.com SNVS867 – JUNE 2014 7.4.2 Low-Voltage LED Control Pattern Generator Control Banks Output Assignment BANK C LVLED1 LVLED1 BANK D LVLED2 LVLED2 BANK E LVLED3 LVLED3 BANK F LVLED4 LVLED4 BANK G LVLED5 LVLED5 BANK H LVLED6 LVLED6 Pattern C Run-time Ramp Up/Down Control Pattern D Pattern E Pattern F Run-time Ramp Up/Down Control Pattern G Pattern H SDA SCL I2CCompatible Interface Low-Voltage LED Assignment Control Bank Configuration Charge Pump Configuration Run-Time Ramp Brightness Control Pattern Control Figure 17. Low-Voltage LED Functional Control Diagram 7.4.2.1 Integrated Charge Pump The LM3633 features an integrated (2X/1X) charge pump capable of supplying LVLED1 to LVLED6 current. The fixed 1-MHz switching frequency allows for use of tiny 1-µF ceramic flying capacitors (CP) and output capacitor (CPOUT). The charge pump can supply the power for the low-voltage LEDs connected to LVLED1 to LVLED6 and can operate in 4 different modes: disabled, automatic gain, 1X gain, or 2X gain (see Figure 18). VIN IN CPOUT CIN Charge Pump Control Register CPOUT 1X, 2X Charge Pump C+ C- SDA SDA 4.4V Typ (2X gain) CP SDA SCL I2CCompatible Interface LVLEDx GND Figure 18. Integrated Charge Pump 7.4.2.2 Charge Pump Disabled With the charge pump disabled, the path from IN to CPOUT is high impedance. Additionally, with the charge pump disabled, the low-voltage current sinks can still be active, thus allowing the low-voltage LEDs to be biased from external sources (see Low-Voltage LED Biasing section). Disabling the charge pump also has no influence on the state of the low-voltage current sinks. For instance, if a low-voltage current string is set to have its anode connected to CPOUT, and the charge pump is disabled, the current sink continues to try to sink current. Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 17 LM3633 SNVS867 – JUNE 2014 www.ti.com 7.4.2.3 Automatic Gain In Automatic Gain Mode the charge-pump-gain transition is actively selected to maintain LED current regulation in the CPOUT-connected, low-voltage current sinks. At higher input voltages the charge pump operates in Pass Mode (1x gain) allowing the voltage at CPOUT to track the input voltage. As VIN drops, the voltage on the lowvoltage current sink(s) drops also. Once any of the active, CPOUT-connected, low-voltage current sink input voltages reach VHR_LV (see Electrical Characteristics), the charge pump automatically switches to a gain of 2x thus preventing dropout (see 2X Gain). Once the charge pump switches over to 2X gain it remains in 2X gain until the active low-voltage current sinks are turned off (enable bit or brightness code 0), even if the current sink input voltage goes above the switch over threshold. 7.4.2.4 Automatic Gain (Flying Capacitor Detection) In Automatic Gain Mode the LM3633 starts up and automatically detects if there is a flying capacitor (CP) connected between C+ and C−. If there is, Automatic Gain Mode operates normally. If the detection circuitry does not detect a connected flying capacitor, the LM3633 automatically switches to 1X Gain mode. 7.4.2.5 1X Gain In 1X Gain Mode the charge pump passes VIN directly through to the output capacitor (CPOUT). There is a resistive drop between IN and CPOUT in the 1X Gain Mode (typically 1.1 Ω) which should be accounted for when determining the headroom requirement for the low-voltage current sinks. In forced 1X Gain Mode the charge pump does not switch; thus, the CP and CPOUT can be omitted from the circuit. 7.4.2.6 2X Gain In 2X Gain Mode the internal charge pump doubles VIN and post-regulates CPOUT to, typically, 4.4 V. This allows for biasing LEDs whose forward voltages are greater than the input supply (VIN). 7.4.2.7 Low-Voltage Current Sinks (LVLED1 to LVLED6) Low-voltage current sinks LVLED1 to LVLED6 each provide the current for a single LED as configured via Control Banks C to H. Each control bank has 8-bit brightness control and 5-bit full-scale current programmability. The low-voltage current sinks can be controlled directly through a dedicated brightness register or with different blinking patterns via the 6 internal pattern generators. Configuration of the low-voltage current sinks is done through the low-voltage Control Bank C to H (LVLED1, LVLED2, and LVLED3 to Control Bank C to E and LVLED4, LVLED5, and LVLED6 to Control Bank F to H). (See Table 6.) 7.4.2.8 Low-Voltage LED Biasing Each low-voltage LED can be powered from the LM3633 charge pump output (CPOUT) or from an external source. When powered from CPOUT the feedback enable bit (LVLED Current Sink Feedback Enables Register bits [5:0]) for that particular low-voltage current sink must be set to '1' (default). This allows for the specific lowvoltage current sink to have control over the charge pumps gain control (see Automatic Gain section). When powered from alternate sources (such as VIN) the feedback enable bit for the particular low-voltage current sink must be set to '0'. This removes the particular current sink from the charge pump feedback loop. In these configurations the application must ensure that the headroom voltage across the low-voltage current sink is high enough to prevent the low-voltage current sinks from going into dropout (see Figure 64 for data on the lowvoltage LED current vs headroom voltage). The LVLEDX feedback enable bits also determine how the shorted low-voltage LED String fault flag is triggered (see Fault Flags/Protection Features). 7.4.2.9 Brightness Register Current Control The LM3633 features brightness register current control for simple user-adjustable current control set by writing directly to the appropriate Control Bank Brightness Registers. The current for the low-voltage LED Control Bank C to H is a function of the full-scale LED current and the 8-bit code in the respective brightness register. The control bank brightness register code represents the percentage of the full-scale LED current. This percentage of full-scale current is different depending on the selected mapping mode (see Table 12). 18 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 LM3633 www.ti.com SNVS867 – JUNE 2014 7.4.2.10 LED Current Mapping Modes All control banks can be programmed for either exponential or linear mapping modes (see Figure 19). These modes determine the transfer characteristic of brightness code to LED current. All low-voltage control banks use the same mapping mode. 7.4.2.11 Exponential Mapping In Exponential Mapping Mode the current ramp (either up or down) appears to the human eye as a more uniform transition than the linear ramp. This is due to the logarithmic response of the eye. In Exponential Mapping Mode the brightness code-to-current transfer function is given by the equation: ILED = ILED_FULLSCALE x 0.85 (44 - Code + 1 5.8181818 ) (5) Where ILED_FULLSCALE is the full-scale LED current setting (see Table 13) and Code is the brightness code in the brightness register. 7.4.2.12 Linear Mapping In Linear Mapping Mode the brightness code-to-current has a linear relationship and follows the equation: ILED = ILED_FULLSCALE x 1 x Code 255 (6) Where ILED_FULLSCALE is the full-scale LED current setting and Code is the brightness code in the brightness register. 21.00 Exponential Linear 18.00 LED CURRENT (mA) 15.00 12.00 9.00 6.00 3.00 0.00 256 224 192 160 128 96 64 32 0 BRIGHTNESS CODE C001 Figure 19. LED Current Mapping Modes 7.4.2.13 Start-up/Shutdown Ramp The start-up and shutdown ramp times are independently programmable in the Control C to Control H StartUp/Shutdown Ramp-Time registers (see Table 8). There are 8 different start-up and 8 different shutdown times. The start-up times can be programmed independently from the shutdown times. The start-up ramp time is from when the Control Bank is enabled to when the LED current reaches its initial set point. The shutdown ramp time is from when the Control Bank is disabled to when the LED current reaches 0. 7.4.2.14 Run-Time Ramp Current ramping from one brightness level to the next is programmed via the Control C to E and Control F to H Ramp-Time registers (see Table 11). There are 8 different ramp-up times and 8 different ramp-down times. The ramp-up time can be programmed independently from the ramp-down time, but each Control Bank cannot be independently programmed. There is one ramp time register which is common to Control Bank C to E and one ramp time register which is common to Control Bank F to H. This register sets the ramp-up and ramp-down times for both direct brightness control and pattern generator modes of operation. Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 19 LM3633 SNVS867 – JUNE 2014 www.ti.com 7.4.3 Low-Voltage LED Pattern Generator The LM3633 contains 6 programmable pattern generators (one for each low-voltage control bank). Each pattern generator has the ability to drive a unique programmable pattern. Each pattern generator has its own set of registers available for pattern programming. The programmable patterns are : delay time, high period, low period, high brightness, and low brightness (see Figure 20). The ramp-up and ramp-down times are controlled by the Control C to E and Control F to H Ramp-Time register. (See Table 11.) tHIGH IHIGH ILOW tDELAY tRISE tFALL tLOW Figure 20. Pattern Generator Timing 7.4.3.1 Delay Time The delay time (tDELAY) is the delay from when the pattern is enabled to when the LED current begins ramping up in the control bank assigned current source(s). The pattern starts when the respective Control Bank Enable register is written high if the Pattern Generator is enabled. There is one tDELAY register for each pattern generator (6 total). The selectable times are programmed with the lower 6 bits of the tDELAY registers. The times are split into 2 groups where codes 0x00 to 0x3C are short durations from 16.384 ms (code 0x00) up to 999.424 ms (code 0x3C) or 16.384 ms/bit. The higher codes (0x3D to 0x7F) select tDELAY from 1130.496 ms up to 9781.248 ms, or 131.072 ms/bit (see Table 27). 7.4.3.2 Rise Time The LED current rise time (tRISE) is the time the LED current takes to move from the low-current brightness level (ILOW) to the high-current brightness level (IHIGH). The rise time of the LED current (tRISE) is set via the Control C to E and Control F to H Ramp-Time registers. There are 8 available ramp-up time settings (see Table 11). There is one ramp-time register which is common to Control Bank C to E and one ramp-time register which is common to Control Bank F to H. 7.4.3.3 Fall Time The LED current fall time (tFALL) is the time the LED current takes to move from the high-current brightness level (IHIGH) to the low-current brightness level (ILOW). The fall time of the LED current (tFALL) is set via the Control C to E and Control F to H Ramp Time registers. There are 8 available ramp-down settings (see Table 11). There is one ramp-time register which is common to Control Bank C to E and one ramp-time register which is common to Control Bank F to H. 7.4.3.4 High Period The LED current high period (tHIGH) is the duration that the LED pattern spends at the high LED current set point (tHIGH). The tHIGH times are programmed via the Pattern Generator High-Time registers. The programmable times are broken into 2 groups. The first set (from code 0x00 to 0x3C) increases the tHIGH time in steps of 16.384 ms. The second set (from code 0x3D to 0x7F) increases the tHIGH time in steps of 131.072 ms (see Table 29). 7.4.3.5 Low Period The LED current low period (tLOW) is the duration that the LED current spends at the low LED current set point (ILOW). The tLOW times are programmed via the Pattern Generator Low-Time registers. There are 256 tLOW settings that are broken into 3 groups of linearly increasing times. The first set (from code 0x00 to 0x3C) increases the tLOW time in steps of 16.384 ms. The second set (from code 0x3D to 0x7F) increases the tLOW time in steps of 131.072 ms. The third set (from code 0x80 to 0xFF) increases the tLOW time in steps of 524.288 ms (see Table 28). 20 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 LM3633 www.ti.com SNVS867 – JUNE 2014 7.4.3.6 Low-Level Brightness The LED current low brightness level (ILOW) is the LED current set point that the pattern rests at during the tLOW period. This level is set via the Pattern Generator Low-Level Brightness registers (BREGL_C to BREGL_H). The brightness level has 8 bits of programmability. ILOW is a function of the Control Bank full-scale current setting and the code in the Pattern Generator Low-Level Brightness registers. For exponential mapping ILOW is: (44 - ILOW = ILED_FULLSCALE x 0.85 BREGL_X + 1 ) 5.8181818 (7) For linear mapping ILOW is: ILOW = ILED_FULLSCALE x 1 x BREGL_X 255 (8) BREGL_X is the Pattern Generator Low-Level Brightness Register setting for the specific Control Bank. 7.4.3.7 High-Level Brightness The LED current high brightness level (IHIGH) is the LED current set point that the pattern rests at during the tHIGH period. This high-current level is set via the Control Banks Brightness Register (BREGH_C to BREGH_H). The brightness level has 8 bits of programmability. IHIGH is a function of the Control Bank full-scale current setting and the code in the Control Banks Brightness Register, prior to the Mapping Mode selected. For exponential mapping IHIGH is: IHIGH = ILED_FULLSCALE x 0.85 +1 (44 - BREGH_X ) 5.8181818 (9) For linear mapping IHIGH is: IHIGH = ILED_FULLSCALE x 1 x BREGH_X 255 (10) BREGH_X is the Control Banks Brightness Register setting for the specific Control Bank. 7.4.4 Fault Flags/Protection Features The LM3633 contains both an LED open-fault and LED short-fault detection. These fault detections are designed to be used in production-level testing and not during normal operation. For the fault flags to operate they must be enabled via the LED Fault Enable Register (see Table 35). The Open LED String (HVLED), Shorted LED String (HVLED), Open LED (LVLED), and Shorted LED (LVLED) sections detail proper procedure for reading back open and short faults in both the high-voltage LED and low-voltage LED strings. 7.4.4.1 Open LED String (HVLED) An open LED string is detected when the voltage at the input to any active high-voltage current sink has fallen below 200 mV, and the boost output voltage has hit the OVP threshold. This test assumes that the HVLED string being detected for an open is connected to the LM3633 boost output (COUT+) (see Table 31). For an HVLED string not connected to the LM3633 boost output voltage, but connected to another voltage source, the boost output does not trigger the OVP flag. In this case an open LED string is not detected. The procedure for detecting an open fault in the HVLED current sinks (provided they are connected to the boost output voltage) is: • Apply power to the LM3633 • Enable Open Fault (Register 0xB4, bit [0] = 1) • Assign HVLED1, HVLED2 and HVLED3 to Bank A (Register 0x10, Bits [2:0] = (0, 0, 0) • Set the start-up ramp times to the fastest setting (Register 0x12 = 0x00) • Set Bank A full-scale current to 20.2 mA (Register 0x20 = 0x13) • Configure HVLED1, HVLED2, and HVLED3 for LED string anode connected to COUT (Register 0x28, bits[2:0] = (1,1,1)) Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 21 LM3633 SNVS867 – JUNE 2014 • • • • • www.ti.com Set Bank A brightness to maximum (Register 0x41 = 0xFF) Enable Bank A (Register 0x2B Bit[0] = 1 Wait 4 ms Read back bits[2:0] of register 0xB0. Bit [0] = 1 (HVLED1 open). Bit [1] = 1 (HVLED2 open). Bit [2] = 1 (HVLED3 open) Disable all banks (Register 0x2B = 0x00) 7.4.4.2 Shorted LED String (HVLED) The LM3633 features an LED short-fault flag indicating one or more of the HVLED strings have experienced a short. The method for detecting a shorted HVLED strings is if the current sink is enabled and the string voltage (VOUT - VHVLED1/2/3) falls to below (VIN – 1 V). This test must be performed on one HVLED string at a time. Performing the test with both current sinks enabled can result in a faulty reading if one of the strings is shorted and the others are not. The procedure for detecting a short in an HVLED string is: • Apply power to the LM3633 • Enable Short Fault (Register 0xB4, bit [1] = 1) • Enable Feedback on the HVLED Current Sinks (Register 0x28, bits[2:0] = (1,1,1)) • Assign HVLED1 to Bank A (Register 0x10, Bits [2:0] = (1, 1, 0) • Set the start-up ramp times to the fastest setting (Register 0x12 = 0x00) • Set Bank A full-scale current to 20.2 mA (Register 0x20 = 0x13) • Set Bank A brightness to max (Register 0x41 = 0xFF) • Enable Bank A (Register 0x2B Bit[0] = 1) • Wait 4 ms • Read back bits[0] of register 0xB2. 1 = HVLED1 short. • Disable all banks (Register 0x2B = 0x00) • Repeat the procedure for the HVLED2 and HVLED3 strings 7.4.4.3 Open LED (LVLED) The LM3633 features an open-LED-fault flag indicating one or more of the active low-voltage LED strings are open. An open in a low-voltage LED string is flagged if the voltage at the input to any active low-voltage current sink goes below VHR_LV (typically 80 mV). Since the open LED detect is flagged when any active current sink input falls below VHR_LV, certain configurations can result in falsely triggering an open. These include: 1. LED anode is tied to CPOUT, charge pump is in 1X gain, and VIN drops low enough to bring any active LVLED current sink below VHR_LV. 2. LED anodeis not tied to CPOUT and VLED_ANODE goes low enough to bring any active LVLED current sink below VHR_LV. The following list describes a test procedure that can be used in detecting an open in the LVLED strings: • Apply power to the LM3633 • Enable Open Fault (Register 0xB4, bit [0] = 1) • Assign LVLED1, LVLED2, and LVLED3 to Bank C and LVLED4, LVLED5, and LVLED6 to Bank F (Register 0x11 = 0x00) • Set the start-up ramp times to the fastest setting (Registers 0x14 and 0x17 = 0x00) • Set Bank C and Bank F full-scale current to 20.2 mA (Registers 0x22 and 0x25 = 0x13) • Configure all LVLED strings for Anode connected to CPOUT (register 0x29 bits[5:0]=1) • Force the Charge Pump into 2X gain (Register 0x2A Bits[2:1] = 11). Ensure that CPOUT and CP are in the circuit and that (VCPOUT is > VFLVLED + VHR_LV) • Set Bank C and Bank F brightness to max (Registers 0x42 and 0x45 = 0xFF) • Enable Bank C and Bank F (Register 0x2B Bits[5,2] = 1) • Wait 4 ms • Read back bits[5:0] of register 0xB1 (1 indicates an open, and a 0 indicates normal operation (see Table 32)) 22 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 LM3633 www.ti.com • SNVS867 – JUNE 2014 Disable all banks (Register 0x2B = 0x00) 7.4.4.4 Shorted LED (LVLED) The LM3633 features an LED short-fault flag indicating when any active low-voltage LED is shorted (Anode to Cathode). A short in a low-voltage LED is determined when the LED voltage (VCPOUT - VHR_LV) falls below 1 V. A • • • • • • • • • • • • procedure for determining a short in an LVLED string is detailed below: Apply Power Enable Short Fault (Register 0xB4, bit [1] = 1) Assign LVLED1, LVLED2, and LVLED3 to Bank C and LVLED4, LVLED5, and LVLED6 to Bank F (Register 0x11 = 0x00) Set the start-up ramp times to the fastest setting (Registers 0x14 and 0x17 = 0x00) Set Bank C and Bank F full-scale current to 20.2 mA (Registers 0x22 and 0x25 = 0x13) Enable Feedback on the LVLED Current Sinks (Register 0x29 = 0x3F) Set Charge Pump to 1X gain (Register 0x2A = 0x40) Set Bank C and Bank F brightness to max (Register 0x42 and 0x45 = 0xFF) Enable Bank C and Bank F(Register 0x2B Bits[5,2] = 1) Wait 4 ms Read bits[5:0] from register 0xB3. A 1 indicates short, and a 0 indicates normal operation (see Table 34). Disable all banks (Register 0x2B = 0x00) 7.4.4.5 Overvoltage Protection (Inductive Boost) The overvoltage protection threshold (OVP) on the LM3633 has 4 different programmable options: 16 V, 24 V, 32 V, and 40 V. The OVP protects the device and associated circuitry from high voltages in the event a high-voltage LED string becomes open. During normal operation, the LM3633 inductive boost converter boosts the output up so as to maintain VHR at the active, high-voltage (COUT connected) current sink inputs. When a high-voltage LED string becomes open, the feedback mechanism is broken, and the boost converter over-boosts the output. When the output voltage reaches the OVP threshold the boost converter stops switching, thus allowing the output node to discharge. When the output discharges to VOVP minus 1 V, the boost converter begins switching again. The OVP sense is at the OVP pin, so this pin must be connected directly to the inductive boost output capacitor positive pin. For high-voltage current sinks that have the HVLED Current Sink Feedback Enables setting such that the highvoltage current sinks anodes are not connected to COUT (feedback is disabled), the overvoltage sense mechanism is not in place to protect the input to the high-voltage current sink. In this situation the application must ensure that the voltage at HVLED1, HVLED2, or HVLED3 does not exceed 40 V. The default setting for OVP is set at 16 V. For applications that require higher than 16 V at the boost output, the OVP threshold must be programmed to a higher level after power up. 7.4.4.6 Current Limit (Inductive Boost) The NMOS switch current limit for the LM3633 inductive boost is set at 1 A (typ). When the current through the LM3633 NFET switch hits this overcurrent protection threshold (OCP), the device turns the NFET off, and the inductor’s energy is discharged into the output capacitor. Switching is then resumed at the next cycle. The current limit protection circuitry can operate continuously each switching cycle. The result is that during highoutput power conditions the device can run continuously in current limit. Under these conditions the LM3633 inductive boost converter stops regulating the headroom voltage across the high-voltage current sinks. This results in a drop in the LED current. 7.4.4.7 Current Limit (Charge Pump) The LM3633 charge pump output current limit is set high enough so that the device supports 29.8 mA (maximum full-scale current) in all LVLED current sinks. (This is typically 29.5 mA x 6 = 179 mA.) For 1X gain the output current limit is typically 350 mA (VIN = 3.6 V). For 2X gain the current limit is typically 240 mA (output referred), with a typical limit on the input current of 480 mA. Figure 67 and Figure 68 detail the charge pump current limit vs VIN at both 1X and 2X gain settings. Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 23 LM3633 SNVS867 – JUNE 2014 www.ti.com 7.4.5 I2C-Compatible Interface 7.4.5.1 Start and Stop Conditions The LM3633 is controlled via an I2C-compatible interface. START and STOP conditions classify the beginning and the end of the I2C session. A START condition is defined as SDA transitioning from HIGH to LOW while SCL is HIGH. A STOP condition is defined as SDA transitioning from LOW to HIGH while SCL is HIGH. The I2C master always generates START and STOP conditions. The I2C bus is considered busy after a START condition and free after a STOP condition. During data transmission the I2C master can generate repeated START conditions. A START and a repeated START condition are equivalent function-wise. The data on SDA must be stable during the HIGH period of the clock signal (SCL). In other words, the state of SDA can only be changed when SCL is LOW. SDA SCL S P Start Condition Stop Condition Figure 21. Start and Stop Sequences 7.4.5.2 I2C-Compatible Address The chip address for the LM3633 is 0110110 (36h). After the START condition, the I2C master sends the 7-bit chip address followed by an eighth read or write bit (R/W). R/W = 0 indicates a WRITE, and R/W = 1 indicates a READ. The second byte following the chip address selects the register address to which the data is written. The third byte contains the data for the selected register. 7.4.5.3 Transferring Data Every byte on the SDA line must be eight bits long, with the most significant bit (MSB) transferred first. Each byte of data must be followed by an acknowledge bit (ACK). The acknowledge related clock pulse (9th clock pulse) is generated by the master. The master releases SDA (HIGH) during the 9th clock pulse. The LM3633 pulls down SDA during the 9th clock pulse signifying an acknowledge. An acknowledge is generated after each byte has been received. 7.5 Register Descriptions Table 2 lists the available registers within the LM3633. Table 2. LM3633 Register Descriptions Address Power On Reset Operation Revision Name 0x00 0x00 Dynamic Software Reset 0x01 0x00 Dynamic HVLED Current Sink Output Configuration 0x10 0x06 Static LVLED Current Sink Output Configuration 0x11 0x36 Static Control A Start-Up/Shutdown Ramp Time 0x12 0x00 Static Control B Start-Up/Shutdown Ramp Time 0x13 0x00 Static Control C Start-Up/Shutdown Ramp Time 0x14 0x00 Static Control D Start-Up/Shutdown Ramp Time 0x15 0x00 Static Control E Start-Up/Shutdown Ramp Time 0x16 0x00 Static Control F Start-Up/Shutdown Ramp Time 0x17 0x00 Static Control G Start-Up/Shutdown Ramp Time 0x18 0x00 Static Control H Start-Up/Shutdown Ramp Time 0x19 0x00 Static Control A and Control B Runtime Ramp Time 0x1A 0x00 Static 24 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 LM3633 www.ti.com SNVS867 – JUNE 2014 Register Descriptions (continued) Table 2. LM3633 Register Descriptions (continued) Name Address Power On Reset Operation Control A and Control B Runtime Ramp Configuration 0x1B 0x00 Static Control C to E Runtime Ramp Time 0x1C 0x00 Static Control F to H Runtime Ramp Time 0x1D 0x00 Static Reserved 0x1E 0x33 Static Brightness Configuration 0x1F 0x00 Static (1) Control A Full-Scale Current Setting 0x20 0x13 Static Control B Full-Scale Current Setting 0x21 0x13 Static Control C Full-Scale Current Setting 0x22 0x13 Static Control D Full-Scale Current Setting 0x23 0x13 Static Control E Full-Scale Current Setting 0x24 0x13 Static Control F Full-Scale Current Setting 0x25 0x13 Static Control G Full-Scale Current Setting 0x26 0x13 Static Control H Full-Scale Current Setting 0x27 0x13 Static HVLED Current Sink Feedback Enable 0x28 0x07 Static LVLED Current Sink Feedback Enable 0x29 0x3F Static Charge Pump Control 0x2A 0x00 Dynamic (2) Control Bank Enables 0x2B 0x00 Dynamic (3) Pattern Generator Enable 0x2C 0x00 Dynamic Boost Control 0x2D 0x00 Static Auto-Frequency Threshold 0x2E 0xCF Static PWM Configuration 0x2F 0x04 Dynamic (4) Reserved 0x30 0x0B Static Reserved 0x31 0x00 Static Control A Brightness LSB 0x40 0x00 Dynamic (5) Control A Brightness MSB 0x41 0x00 Dynamic Control B Brightness LSB 0x42 0x00 Dynamic (5) Control B Brightness MSB 0x43 0x00 Dynamic Control C Brightness 0x44 0x00 Dynamic Control D Brightness 0x45 0x00 Dynamic Control E Brightness 0x46 0x00 Dynamic Control F Brightness 0x47 0x00 Dynamic Control G Brightness 0x48 0x00 Dynamic Control H Brightness 0x49 0x00 Dynamic Control C Pattern Generator Delay Time 0x50 0x00 Static Control C Pattern Generator Low Time 0x51 0x00 Static Control C Pattern Generator High Time 0x52 0x00 Static Control C Pattern Generator Low-Level Brightness 0x53 0x00 Dynamic Control D Pattern Generator Delay Time 0x60 0x00 Static Control D Pattern Generator Low Time 0x61 0x00 Static Control D Pattern Generator High Time 0x62 0x00 Static Control D Pattern Generator Low-Level Brightness 0x63 0x00 Dynamic (1) (2) (3) (4) (5) This register requires special handling due to the control of both high-voltage and low-voltage LEDs. Only the charge pump enable bit is dynamic; the charge pump gain select bits should only be changed when the charge pump is disabled. This register requires special handling due to the control of both high-voltage and low-voltage LEDs. The PWM input should always be in the inactive state when setting the Control Bank PWM Enable bit. The PWM configuration bits should only be changed when the PWM is disabled for both Control Banks. The Control Brightness MSB Register must be written for the Control Brightness LSB Register value to take effect. Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 25 LM3633 SNVS867 – JUNE 2014 www.ti.com Register Descriptions (continued) Table 2. LM3633 Register Descriptions (continued) Address Power On Reset Operation Control E Pattern Generator Delay Time Name 0x70 0x00 Static Control E Pattern Generator Low Time 0x71 0x00 Static Control E Pattern Generator High Time 0x72 0x00 Static Control E Pattern Generator Low-Level Brightness 0x73 0x00 Dynamic Control F Pattern Generator Delay Time 0x80 0x00 Static Control F Pattern Generator Low Time 0x81 0x00 Static Control F Pattern Generator High Time 0x82 0x00 Static Control F Pattern Generator Low-Level Brightness 0x83 0x00 Dynamic Control G Pattern Generator Delay Time 0x90 0x00 Static Control G Pattern Generator Low Time 0x91 0x00 Static Control G Pattern Generator High Time 0x92 0x00 Static Control G Pattern Generator Low-Level Brightness 0x93 0x00 Dynamic Control H Pattern Generator Delay Time 0xA0 0x00 Static Control H Pattern Generator Low Time 0xA1 0x00 Static Control H Pattern Generator High Time 0xA2 0x00 Static Control H Pattern Generator Low-Level Brightness 0xA3 0x00 Dynamic HVLED Open Faults 0xB0 0x00 Production Test Only LVLED Open Faults 0xB1 0x00 Production Test Only HVLED Short Faults 0xB2 0x00 Production Test Only LVLED Short Faults 0xB3 0x00 Production Test Only LED Fault Enable 0xB4 0x00 Production Test Only Table 3. Revision (Address 0x00) Bits [7:4] Not Used Bits [3:0] Silicon Revision Reserved xxxx Rev. A Silicon Table 4. Software Reset (Address 0x01) Bits [7:1] Not Used Bit [0] Silicon Revision 0 = Normal Operation 1 = Software Reset (self-clearing) Reserved Table 5. HVLED Current Sink Output Configuration (Address 0x10) Bits [7:3] Not Used Reserved Bit [2] HVLED3 Configuration Bit [1] HVLED2 Configuration 0 = Control A 1 = Control B (default) Bit [0] HVLED1 Configuration 0 = Control A 1 = Control B (default) 0 = Control A (default) 1 = Control B Table 6. LVLED Current Sink Output Configuration (Address 0x11) Bits [7:6] Not Used Reserved 26 Bit [5] LVLED6 Configuration 0 = Control F 1 = Control H (default) Bit [4] LVLED5 Configuration 0 = Control F 1 = Control G (default) Bit [3] Not Used LVLED4 Bit [2] LVLED3 Configuration 0 = Control C 1 = Control E (default) Submit Documentation Feedback Bit [1] LVLED2 Configuration 0 = Control C 1 = Control D (default) Bit [0] Not Used LVLED1 Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 LM3633 www.ti.com SNVS867 – JUNE 2014 Table 7. Control A and Control B Start-up/Shutdown Ramp Time (Address 0x12 Through 0x13) Bits [7:4] Start-up Ramp Bits [3:0] Shutdown Ramp 0000 = 2048 µs (default) 0001 = 262 ms 0010 = 524 ms 0011 = 1.049 s 0100 = 2.097 s 0101 = 4.194 s 0110 = 8.389 s 0111 = 16.78 s 1000 = 33.55 s 1001 = 41.94 s 1010 = 50.33 s 1011 = 58.72 s 1100 = 67.11 s 1101 = 83.88 s 1110 = 100.66 s 1111 = 117.44 s 0000 = 2048 µs (default) 0001 = 262 ms 0010 = 524 ms 0011 = 1.049 s 0100 = 2.097 s 0101 = 4.194 s 0110 = 8.389 s 0111 = 16.78 s 1000 = 33.55 s 1001 = 41.94 s 1010 = 50.33 s 1011 = 58.72 s 1100 = 67.11 s 1101 = 83.88 s 1110 = 100.66 s 1111 = 117.44 s Table 8. Control C to Control H Start-up/Shutdown Ramp Time (Address 0x14 Through 0x19) Bit [7] Not Used Bits [6:4] Start-up Transition Time 000 = 2048 µs (default) 001 = 262 ms 010 = 524 ms 011 = 1.049 s 100 = 2.097 s 101 = 4.194 s 110 = 8.389 s 111 = 16.78 s Reserved Bit [3] Not Used Bits [2:0] Shutdown Transition Time Reserved 000 = 2048 µs (default) 001 = 262 ms 010 = 524 ms 011 = 1.049 s 100 = 2.097 s 101 = 4.194 s 110 = 8.389 s 111 = 16.78 s Table 9. Control A and Control B Run-Time Ramp Time (Address 0x1A) Bits [7:4] Transition Time Ramp Up 000 = 2048 µs (default) 001 = 262 ms 010 = 524 ms 011 = 1.049 s 100 = 2.097 s 101 = 4.194 s 110 = 8.389 s 111 = 16.78 s 1000 = 33.55 s 1001 = 41.94 s 1010 = 50.33 s 1011 = 58.72 s 1100 = 67.11 s 1101 = 83.88 s 1110 = 100.66 s 1111 = 117.44 s Bits [3:0] Transition Time Ramp Down 000 = 2048 µs (default) 001 = 262 ms 010 = 524 ms 011 = 1.049 s 100 = 2.097 s 101 = 4.194 s 110 = 8.389 s 111 = 16.78 s 1000 = 33.55 s 1001 = 41.94 s 1010 = 50.33 s 1011 = 58.72 s 1100 = 67.11 s 1101 = 83.88 s 1110 = 100.66 s 1111 = 117.44 s Table 10. Control A and Control B Run-Time Ramp Configuration (Address 0x1B) Bits [7:4] Not Used Reserved Bits [3:2] Control B Run-time Ramp Select Bits [1:0] Control A Run-time Ramp Select 00 = Controls A and B Runtime Ramp Times (default) 01 = Control B Start-up and Shutdown Ramp Times 1x = Ramp disabled 00 = Controls A and B Runtime Ramp Times (default) 01 = Control A Start-up and Shutdown Ramp Times 1x = Ramp disabled Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 27 LM3633 SNVS867 – JUNE 2014 www.ti.com Table 11. Controls C to E and Controls F to H Ramp Time (Address 0x1C and 0x1D) Bit [7] Not Used Bits [6:4] Transition Time Ramp Up 000 = 2048 µs (default) 001 = 262 ms 010 = 524 ms 011 = 1.049 s 100 =2.097 s 101 = 4.194 s 110 = 8.389 s 111 = 16.78 s Reserved Bit [3] Not Used Reserved Bits [2:0] Transition Time Ramp Down 000 = 2048 µs (default) 001 = 262 ms 010 = 524 ms 011 = 1.049 s 100 =2.097 s 101 = 4.194 s 110 = 8.389 s 111 = 16.78 s Table 12. Control A to Control H Brightness Configuration (Address 0x1F) Bits [7:4] Not Used Reserved Bit [3] Bit [2] Control B Dither Disable Control A Dither Disable Bit [1] Controls C, D, E, F, G, H Mapping Mode 0 Enable (default) 1 Disable 0 Exponential (default) 1 Linear 0 Enable (default) 1 Disable Bit [0] Control A/B Mapping Mode 0 Exponential (default) 1 Linear Table 13. Control A to Control H Full-Scale Current Setting (Address 0x20 Through 0x27) Bits [7:5] Not Used Bits [4:0] Controls A, B, C, D, E, F, G, H Full-Scale Current Select Bits Reserved 00000 = 5 mA 10011 = 20.2 mA (default) 11111 = 29.8 mA (0.8 mA steps, FS = 5 mA + code * 0.8 mA) Table 14. HVLED Current Sink Feedback Enable (Address 0x28) Bits [7:3] Not Used Reserved Bit [2] HVLED3 Feedback Enable Bit [1] HVLED2 Feedback Enable Bit [0] HVLED1 Feedback Enable 0 = LED anode is NOT CONNECTED to COUT 1 = LED anode is CONNECTED to COUT (default) 0 = LED anode is NOT CONNECTED to COUT 1 = LED anode is CONNECTED to COUT (default) 0 = LED anode is NOT CONNECTED to COUT 1 = LED anode is CONNECTED to COUT (default) Table 15. LVLED Current Sink Feedback Enable (Address 0x29) Bits [7:6] Bit [5] Bit [4] Bit [3] Bit [2] Bit [1] Bit [0] Not LVLED6 Feedback LVLED5 Feedback LVLED4 Feedback LVLED3 Feedback LVLED2 Feedback LVLED1 Feedback Used Enable Enable Enable Enable Enable Enable 0 = LED anode is NOT CONNECTED to CPOUT Reserved 1 = LED anode is CONNECTED to CPOUT (default) 0 = LED anode is NOT CONNECTED to CPOUT 1 = LED anode is CONNECTED to CPOUT (default) 0 = LED anode is NOT CONNECTED to CPOUT 1 = LED anode is CONNECTED to CPOUT (default) 0 = LED anode is NOT CONNECTED to CPOUT 1 = LED anode is CONNECTED to CPOUT (default) 0 = LED anode is NOT CONNECTED to CPOUT 1 = LED anode is CONNECTED to CPOUT (default) 0 = LED anode is NOT CONNECTED to CPOUT 1 = LED anode is CONNECTED to CPOUT (default) Table 16. Charge Pump Control (Address 0x2A) Bits [7:3] Not Used Bits [2:1] Gain Select Bit [0] Charge Pump Disable N/A 0X = Automatic gain select (default) 10 = Gain set at 1X 11 = Gain set at 2X 0 = Enable (default) 1 = Disable 28 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 LM3633 www.ti.com SNVS867 – JUNE 2014 Table 17. Control Bank Enable (Address 0x2B) Bit [7] Control H Enable 0 = Disable (default) 1 = Enable Bit [6] Control G Enable 0 = Disable (default) 1 = Enable Bit [5] Control F Enable Bit [4] Control E Enable 0 = Disable (default) 1 = Enable 0 = Disable (default) 1 = Enable Bit [3] Control D Enable Bit [2] Control C Enable 0 = Disable (default) 1 = Enable 0 = Disable (default) 1 = Enable Bit [1] Control B Enable 0 = Disable (default) 1 = Enable Bit [0] Control A Enable 0 = Disable (default) 1 = Enable Table 18. Pattern Generator Enable (Address 0x2C) Bit [7] Control H Pattern Generator Enable Bit [6] Control G Pattern Generator Enable Bit [5] Control F Pattern Generator Enable Bit [4] Control E Pattern Generator Enable Bit [3] Control D Pattern Generator Enable Bit [2] Control C Pattern Generator Enable Bits [1:0] Not Used 0 = Disable (default) 1 = Enable 0 = Disable (default) 1 = Enable 0 = Disable (default) 1 = Enable 0 = Disable (default) 1 = Enable 0 = Disable (default) 1 = Enable 0 = Disable (default) 1 = Enable Reserved Table 19. Boost Control (Address 0x2D) Bits [7:5] Not Used Reserved Bit [4] Auto-Headroom Enable 0 = Disable (default) 1 = Enable Bit [3] Auto-Frequency Enable 0 = Disable (default) 1 = Enable Bits [2:1] Boost OVP Select 00 01 10 11 = 16 = 24 = 32 = 40 V (default) V V V Bit [0] Boost Frequency Select 0 = 500 kHz (default) 1 = 1 MHz Table 20. Auto-Frequency Threshold (Address 0x2E) Bits [7:0] Auto-Frequency Threshold (default = 11001111) Table 21. PWM Configuration (Address 0x2F) Bits [7:4] Not Used Reserved Bit [3] PWM Zero Detection Enable 0 = Disable 1 = Enable (default) Bit [2] PWM Polarity 0 = Active Low 1 = Active High (default) Bit [1] Control B PWM Enable 0 = Disable (default) 1 = Enable Bit [0] Control A PWM Enable 0 = Disable (default) 1 = Enable Table 22. Control A Brightness LSB (Address 0x40) Bits [7:3] Not Used Reserved Bits [2:0] Control A Brightness [2:0] Brightness LSB Table 23. Control A Brightness MSB (Address 0x41) Bits [7:0] Control A Brightness [10:3] Brightness MSB (LED current ramping does not start until the MSB is written, LSB must always be written before MSB) Table 24. Control B Brightness LSB (Address 0x42) Bits [7:3] Not Used Reserved Bits [2:0] Control B Brightness [2:0] Brightness LSB Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 29 LM3633 SNVS867 – JUNE 2014 www.ti.com Table 25. Control B Brightness MSB (Address 0x43) Bits [7:0] Control B Brightness [10:3] Brightness MSB (LED current ramping does not start until the MSB is written, LSB must always be written before MSB) Table 26. Control C to Control H Brightness (Address 0x44 Through 0x49) Bits [7:0] Control C-H Brightness [7:0] (BREGH_X) Brightness Code (refer to High-Level Brightness) 7.5.1 Pattern Generator Registers tHIGH IHIGH ILOW tDELAY tRISE tFALL tLOW Figure 22. Pattern Generator Timing Table 27. Control C to Control H Pattern Generator Delay Time (Address 0x50, 0x60, 0x70, 0x80, 0x90, 0xA0) Bit [7] Bits [6:0] tDELAY times 0x00 = 16.384 ms (16.384 ms/step) (default) 0x01 = 32.768 ms : : 0x3B = 983.05 ms Reserved 0x3C = 999.424 ms 0x3D = 1130.496 ms (131.072 ms/step) 0x3E = 1261.568 ms : : 0x7F = 9781.248 ms Table 28. Control C to Control H Pattern Generator Low Time (Address 0x51, 0x61, 0x71, 0x81, 0x91, 0xA1) Bits [7:0] tLOW times 0x00 = 16.384 ms (16.384 ms/step) (default) 0x01 = 32.768 ms : : 0x3B = 983.05 ms 0x3C = 999.424 ms 0x3D = 1130.496 ms (131.072 ms/step) 0x3E = 1261.568 ms : 30 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 LM3633 www.ti.com SNVS867 – JUNE 2014 Table 28. Control C to Control H Pattern Generator Low Time (Address 0x51, 0x61, 0x71, 0x81, 0x91, 0xA1) (continued) Bits [7:0] : 0x7F = 9781.248 ms 0x80 = 10.305536 s (524.288 ms/step) : : 0xFF = 76.890112 s Table 29. Control C to Control H Pattern Generator High Time (Address 0x52, 0x62, 0x72, 0x82, 0x92, 0xA2) Bit [7] Not Used Bits [6:0] tHIGH times 0x00 = 16.384 ms (16.384 ms/step) (default) 0x01 = 32.768 ms : : 0x3B = 983.05 ms 0x3C = 999.424 ms 0x3D = 1130.496 ms (131.072 ms/step) 0x3E = 1261.568 ms : : 0x7F = 9781.248 ms Table 30. Control C to Control H Pattern Generator Low-Level Brightness (Address 0x53, 0x63, 0x73, 0x83, 0x93, 0xA3) Bits [7:0] Controls C to H Low-Level Brightness (BREGL_X) Brightness Code (refer to Low-Level Brightness) Table 31. HVLED Open Faults (Address 0xB0) Bits [7:3] Not Used Bit [2] HVLED3 Open Bit [1] HVLED2 Open Bit [0] HVLED1 Open Reserved 0 = Normal Operation 1 = Open 0 = Normal Operation 1 = Open 0 = Normal Operation 1 = Open Table 32. LVLED Open Faults (Address 0xB1) Bits [7:6] Not Used Bit [5] LVLED6 Open Bit [4] LVLED5 Open Bit [3] LVLED4 Open Bit [2] LVLED3 Open Bit [1] LVLED2 Open Bit [0] LVLED1 Open Reserved 0 = Normal Operation 1 = Open 0 = Normal Operation 1 = Open 0 = Normal Operation 1 = Open 0 = Normal Operation 1 = Open 0 = Normal Operation 1 = Open 0 = Normal Operation 1 = Open Table 33. HVLED Short Faults (Address 0xB2) Bits [7:3] Not Used Bit [2] HVLED3 Short Bit [1] HVLED2 Short Bit [0] HVLED1 Short Reserved 0 = Normal Operation 1 = Short 0 = Normal Operation 1 = Short 0 = Normal Operation 1 = Short Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 31 LM3633 SNVS867 – JUNE 2014 www.ti.com Table 34. LVLED Short Faults (Address 0xB3) Bits [7:6] Not Used Bit [5] LVLED6 Short Bit [4] LVLED5 Short Bit [3] LVLED4 Short Bit [2] LVLED3 Short Bit [1] LHVLED2 Short Bit [0] LVLED1 Short Reserved 0 = Normal Operation 1 = Short 0 = Normal Operation 1 = Short 0 = Normal Operation 1 = Short 0 = Normal Operation 1 = Short 0 = Normal Operation 1 = Short 0 = Normal Operation 1 = Short Table 35. LED Fault Enable (Address 0xB4) Bits [7:2] Not Used Bit [1] Short Faults Enable Bit [0] Open Faults Enable Reserved 0 = Disable (default) 1 = Enable 0 = Disable (default) 1 = Enable 32 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 LM3633 www.ti.com SNVS867 – JUNE 2014 8 Applications and Implementation 8.1 Application Information The LM3633 provides a complete high-performance, high-voltage LED and low-voltage-indicator LED lighting solution for mobile handsets. The LM3633 is highly configurable and can support the high-voltage LED configurations summarized in Table 36. The LM3633 utilizes internal ramp-time generators to provide smooth 11bit high-voltage LED dimming while requiring only an 8-bit command from the host controller. The LM3633EVM is available with GUI software to aid understanding of the LM3633 operation. Table 36. Supported High-Voltage LED Configurations NUMBER OF HIGH-VOLTAGE LED STRINGS MAXIMUM NUMBER OF SERIES HIGH-VOLTAGE LEDs 3 6 2 10 1 10 8.2 Typical Application Figure 23. LM3633 Simplified Schematic Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 33 LM3633 SNVS867 – JUNE 2014 www.ti.com Typical Application (continued) Table 37. Application Circuit Component List COMPONENT MANUFACTURER L COUT VALUE PART NUMBER SIZE CURRENT/VOLTAGE RATING (Resistance) 10 µH VLF302512MT-100M 2.5mm x 3.0mm x 1.2mm 620 mA/0.25 mΩ 1 µF C2012X5R1H105 0805 50 V CIN 2.2 µF C1005X5R1A225 0402 10 V CPOUT/CP 1 µF C1005X5R1A105 0402 10 V 312WBCW(A) 0603 30 mA/3.3 V (typ.) NSR0240V2T1G SOD-523 40 V, 250 mA TDK WLED Diode On-Semi 8.2.1 Design Requirements Table 38. Design Parameters DESIGN PARAMETER EXAMPLE VALUE Full-scale current setting 20.2 mA Minimum Input Voltage 3.0 V LED series/parallel configuration 6s3p LED maximum forward voltage (Vf) 3.5 V Efficiency 80 The designer needs to know the following • Full-scale current setting • Minimum input voltage • LED series/parallel configuration • LED maximum Vf voltage • LM3633 Efficiency for LED configuration The full-scale current setting, number of led strings, number of series LEDs, and minimum input voltage are needed in order to calculate the peak input current. This information guides the designer to make the appropriate inductor selection for the application. The LM3633 boost converter output voltage (VOUT) is calculated as follows: number of series LEDs * Vƒ + 0.4V The LM3633 boost converter output current (IOUT) is calculated as follows: number of parallel LED strings * Fullscale current The LM3633 peak input current (I IN_PK) is calculated as follows: VOUT * IOUT / Minimum VIN / Efficiency IIN_PK ! VOUT uIOUT y Minimum VIN y Efficiency VOUT 21.4 V 6 u 3.5V  0.4V IOUT 0.0606 A 0.0202 u 3 IIN_PK ! 0.54A 21.4 V u0.0606 A y3.0V y0.8 (11) 8.2.2 Detailed Design Procedure 8.2.2.1 Boost Converter Maximum Output Power (Boost) Maximum output power of the LM3633 is governed by two factors: the peak current limit (ICL = 880 mA min), and the maximum output voltage (VOVP). When the application causes either of these limits to be reached it is possible that the proper current regulation and matching between LED current strings is not met. 34 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 LM3633 www.ti.com SNVS867 – JUNE 2014 8.2.2.1.1 Peak Current Limited In the case of a peak current limited situation, the NFET switch turns off for the remainder of the switching period when the inductor current peak hits the LM3633 current limit. If this happens each switching cycle the LM3633 regulates the inductor current peak instead of the headroom across the current sinks. This can result in the dropout of the boost output connected current sinks, and the LED current dropping below its programmed level. The peak current in a boost converter is dependent on the value of the inductor, total LED current in the boost (IOUT), the boost output voltage (VOUT) (which is the highest voltage LED string + VHR ), the input voltage (VIN), the switching frequency, and the efficiency (Output Power/Input Power). Additionally, the peak current is different depending on whether the inductor current is continuous during the entire switching period (CCM), or discontinuous (DCM) where it goes to 0 before the switching period ends. For Continuous Conduction Mode the peak inductor current is given by: IOUT x VOUT IPEAK = + VIN x efficiency VIN 2 x fSW x L x 1- VIN x efficiency VOUT (12) For Discontinuous Conduction Mode the peak inductor current is given by: 2 u IOUT IPEAK = ´ ¶ SW u L u efficiency u §VOUT - VIN u efficiency· © ¹ (13) To determine which mode the circuit is operating in (CCM or DCM) it is necessary to perform a calculation to test whether the inductor current ripple is less than the anticipated input current (IIN). If ΔIL is less than IIN then the device operates in CCM. If ΔIL is greater than IIN then the device is operating in DCM. IOUT u VOUT VIN u efficiency > VIN ´ ¶SW uL u §1  © VIN u efficiency · VOUT ¹ (14) Typically at currents high enough to reach the LM3633 peak current limit, the device operates in CCM. The following figures show the output current and voltage derating for a 10-µH and a 22-µH inductor. These plots take equations (1) and (2) from above and plot VOUT and IOUT with varying VIN, a constant peak current of 880 mA (ICL_MIN), 500-kHz switching frequency, and a constant efficiency of 85%. Using these curves gives a good design guideline on selecting the correct inductor for a given output power requirement. A 10-µH inductor is typically a smaller device with lower on resistance, but the peak currents are higher. A 22-µH inductor provides for lower peak currents, but to match the DC resistance of a 10-µH inductor, a larger-sized device is required. 0.095 0.090 0.085 IOUT (A) IOUT (A) 0.080 0.075 0.070 0.065 VOUT=22V VOUT=24V VOUT=26V VOUT=30V VOUT=34V VOUT=38V 0.060 0.055 0.050 0.045 0.095 0.090 0.085 0.080 0.075 0.070 0.065 0.060 0.055 0.050 0.045 0.040 0.035 0.030 0.025 0.020 5.5 5.3 5.1 4.9 4.7 4.5 4.3 4.1 3.9 3.7 3.5 3.3 3.1 2.9 2.7 5.5 5.3 5.1 4.9 4.7 4.5 4.3 4.1 3.9 3.7 3.5 3.3 3.1 2.9 2.7 VIN (V) VOUT=22V VOUT=24V VOUT=26V VOUT=30V VOUT=34V C052 Figure 24. Maximum Output Power (22 µH) VIN (V) C051 Figure 25. Maximum Output Power (10 µH) Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 35 LM3633 SNVS867 – JUNE 2014 www.ti.com 8.2.2.1.2 Output Voltage Limited In the case of a output voltage limited situation (VOUT = VOVP), when the boost output voltage hits the LM3633 OVP threshold, the NFET turns off and stays off until the output voltage falls below the hysteresis level (typically 1 V below the OVP threshold). This results in the boost converter regulating the output voltage to the programmed OVP threshold (16 V, 24 V, 32 V, or 40 V), causing the current sinks to go into dropout. The default OVP threshold is set at 16 V. For LED strings higher than typically 4 series LEDs, the OVP has to be programmed higher after power-up or after a HWEN reset. 8.2.2.2 Boost Inductor Selection The boost circuit operates using a 4.7-μH to 22-μH inductor. The inductor selected must have a saturation current greater than the peak operating current. 8.2.2.3 Output Capacitor Selection The LM3633 inductive boost converter requires a 1.0-µF (X5R or X7R) ceramic capacitor to filter the output voltage. The voltage rating of the capacitor depends on the selected OVP setting. For the 16-V setting a 16-V capacitor must be used. For the 24-V setting a 25-V capacitor must be used. For the 32-V setting, a 35-V capacitor must be used. For the 40-V setting a 50-V capacitor must be used. Pay careful attention to the capacitor tolerance and DC bias response. For proper operation the degradation in capacitance due to tolerance, DC bias, and temperature, should stay above 0.4 µF. This might require placing two devices in parallel in order to maintain the required output capacitance over the device operating range, and series LED configuration. 8.2.2.4 Schottky Diode Selection The Schottky diode must have a reverse breakdown voltage greater than the LM3633 maximum output voltage (see Overvoltage Protection (Inductive Boost) section). Additionally, the diode must have an average current rating high enough to handle the LM3633 maximum output current, and at the same time the diode peak current rating must be high enough to handle the peak inductor current. Schottky diodes are required due to their lower forward voltage drop (0.3 V to 0.5 V) and their fast recovery time. 8.2.2.5 Input Capacitor Selection The input capacitor on the LM3633 filters the voltage ripple due to the switching action of the inductive boost and the capacitive charge-pump doubler. A ceramic capacitor of at least 2.2-µF (X5R or X7R) must be used to filter the input voltage. 8.2.2.6 Maximum Output Power (Charge Pump) The maximum output power available from the LM3633 charge pump is determined by the maximum output voltage available from the charge pump. In 1X gain the charge pump operates in Pass Mode so the voltage at CPOUT tracks VIN (less the drop across the charge-pump pass switch). In this case the maximum output power is given as: POUT_MAX = ILVLED_TOTAL x ( VIN - ILVLED_TOTAL x RCP) (15) where RCP is the resistance from VIN to CPOUT and ILVLED_TOTAL is the maximum programmed current in the LVLED strings. In 2X gain the voltage at CPOUT (VCPOUT_2X) is regulated to typically 4.4 V. In this case the maximum output power is given by: POUT_MAX = ILVLED_TOTAL x VCPOUT_2X (16) Both equations assume there is sufficient headroom at the top side of the low-voltage current sinks to ensure the LED current remains in regulation (VHR_LV) in the electrical table. 8.2.2.7 Charge Pump Flying Capacitor Selection The charge pump flying capacitor must quickly charge up to the input voltage and then supply the current to the output every switching cycle (1 MHz). This fast switching action requires a 1.0-µF (X5R or X7R) ceramic capacitor connected to the C+ and C– pins with a low inductive connection. 36 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 LM3633 www.ti.com SNVS867 – JUNE 2014 8.2.2.8 Charge Pump Output Capacitor Selection The charge pump output capacitor filters the switched charge from the flying capacitor every switching cycle (1 MHz). This fast switching action requires a 1.0-µF (X5R or X7R) ceramic capacitor connected to the CPOUT pin with a low-inductive connection. 8.2.2.9 Charge Pump Input Capacitor Selection The input capacitor for the LM3633 charge pump is the same one used for the LM3633 inductive boost converter (see Input Capacitor Selection). 8.2.3 Application Performance Plots VIN = 3.6 V, VLED = 3.2 V @ 20 mA, Typical Application Circuit, TA = 25°C, Full-Scale Current = 20.2 mA unless otherwise specified. Efficiency is VOUT × (IHVLED1 + IHVLED2 + IHVLED3)/(VIN × IIN), matching curves are (ΔILED_MAX/ILED_AVE). See Table 37. Three String, L=22µH, 500kHz Three String, L=22µH, 1MHz 92% 90% 90% 88% 88% 86% 86% EFFICIENCY (%) EFFICIENCY (%) 92% 84% 82% 80% 78% 76% 84% 82% 80% 78% 76% 74% 74% 72% 72% 70% 70% 2.5 3 3.5 4 4.5 5 5.5 2.5 3 3.5 VIN (V) 4 4.5 5 C002 C002 Top to Bottom: 3x3, 3x4, 3x5, 3x6 (LEDs) Top to Bottom: 3x3, 3x4, 3x5, 3x6 (LEDs) Figure 26. Efficiency vs VIN, Three String Two String, L=22µH, 1MHz 92% 90% 90% 88% 88% 86% 86% EFFICIENCY (%) EFFICIENCY (%) Figure 27. Efficiency vs VIN, Three String Two String, L=22µH, 500kHz 92% 5.5 VIN (V) 84% 82% 80% 78% 76% 84% 82% 80% 78% 76% 74% 74% 72% 72% 70% 70% 2.5 3 3.5 4 4.5 5 5.5 2.5 VIN (V) 3 3.5 4 4.5 5 5.5 VIN (V) C002 Top to Bottom: 2x3, 2x4, 2x5, 2x6, 2x7, 2x8, 2x9, 2x10 (LEDs) C002 Top to Bottom: 2x3, 2x4, 2x5, 2x6, 2x7, 2x8, 2x9, 2x10 (LEDs) Figure 28. Efficiency vs VIN, Dual String Figure 29. Efficiency vs VIN, Dual String Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 37 LM3633 SNVS867 – JUNE 2014 www.ti.com VIN = 3.6 V, VLED = 3.2 V @ 20 mA, Typical Application Circuit, TA = 25°C, Full-Scale Current = 20.2 mA unless otherwise specified. Efficiency is VOUT × (IHVLED1 + IHVLED2 + IHVLED3)/(VIN × IIN), matching curves are (ΔILED_MAX/ILED_AVE). See Table 37. One String, L=22µH, 500kHz One String, L=22µH, 1MHz 92% 90% 90% 88% 88% 86% 86% EFFICIENCY (%) EFFICIENCY (%) 92% 84% 82% 80% 78% 76% 84% 82% 80% 78% 76% 74% 74% 72% 72% 70% 70% 2.5 3 3.5 4 4.5 5 5.5 2.5 3 3.5 VIN (V) 4 4.5 5 C002 Top to Bottom: 1x3, 1x4, 1x5, 1x6, 1x7, 1x8, 1x9, 1x10 (LEDs) C002 Top to Bottom: 1x3, 1x4, 1x5, 1x6, 1x7, 1x8, 1x9, 1x10 (LEDs) Figure 30. Efficiency vs VIN, Single String Three String, L=10µH, 1MHz 90% 88% 88% 86% 86% 84% 84% EFFICIENCY (%) EFFICIENCY (%) Figure 31. Efficiency vs VIN, Single String Three String, L=10µH, 500kHz 90% 82% 80% 78% 76% 82% 80% 78% 76% 74% 74% 72% 72% 70% 70% 2.5 3 3.5 4 4.5 5 5.5 2.5 3 3.5 VIN (V) 4 4.5 5 C002 C002 Top to Bottom: 3x3, 3x4, 3x5, 3x6 (LEDs) Figure 32. Efficiency vs VIN, Three String Two String, L=10µH, 1MHz 90% 88% 88% 86% 86% 84% 84% EFFICIENCY (%) EFFICIENCY (%) Figure 33. Efficiency vs VIN, Three String Two String, L=10µH, 500kHz 90% 5.5 VIN (V) Top to Bottom: 3x3, 3x4, 3x5, 3x6 (LEDs) 82% 80% 78% 76% 82% 80% 78% 76% 74% 74% 72% 72% 70% 70% 2.5 3 3.5 4 4.5 5 5.5 2.5 VIN (V) 3 3.5 4 4.5 5 5.5 VIN (V) C002 Top to Bottom: 2x3, 2x4, 2x5, 2x6, 2x7, 2x8, 2x9, 2x10 (LEDs) C002 Top to Bottom: 2x3, 2x4, 2x5, 2x6, 2x7, 2x8, 2x9, 2x10 (LEDs) Figure 34. Efficiency vs VIN, Dual String 38 5.5 VIN (V) Submit Documentation Feedback Figure 35. Efficiency vs VIN, Dual String Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 LM3633 www.ti.com SNVS867 – JUNE 2014 VIN = 3.6 V, VLED = 3.2 V @ 20 mA, Typical Application Circuit, TA = 25°C, Full-Scale Current = 20.2 mA unless otherwise specified. Efficiency is VOUT × (IHVLED1 + IHVLED2 + IHVLED3)/(VIN × IIN), matching curves are (ΔILED_MAX/ILED_AVE). See Table 37. One String, L=10µH, 500kHz One String, L=10µH, 1MHz 92% 90% 90% 88% 88% 86% 86% EFFICIENCY (%) EFFICIENCY (%) 92% 84% 82% 80% 78% 76% 84% 82% 80% 78% 76% 74% 74% 72% 72% 70% 70% 2.5 3 3.5 4 4.5 5 5.5 2.5 3 3.5 VIN (V) 4 4.5 5 C002 Top to Bottom: 1x3, 1x4, 1x5, 1x6, 1x7, 1x8, 1x9, 1x10 (LEDs) C002 Top to Bottom: 1x3, 1x4, 1x5, 1x6, 1x7, 1x8, 1x9, 1x10 (LEDs) Figure 36. Efficiency vs VIN, Single String Figure 37. Efficiency vs VIN, Single String Three String, L=4.7µH, 500kHz 90% 5.5 VIN (V) Three String, L=4.7µH, 1MHz 90% 88% 85% 84% EFFICIENCY (%) EFFICIENCY (%) 86% 82% 80% 78% 76% 80% 75% 70% 74% 72% 70% 65% 2.5 3 3.5 4 4.5 5 2.5 5.5 3 3.5 VIN (V) 4 4.5 5 C002 C002 Top to Bottom: 3x3, 3x4, 3x5, 3x6 (LEDs) Top to Bottom: 3x3, 3x4, 3x5, 3x6 (LEDs) Figure 38. Efficiency vs VIN, Three String Figure 39. Efficiency vs VIN, Three String Two String, L=4.7µH, 500kHz 88% 5.5 VIN (V) Two String, L=4.7µH, 1MHz 90% 86% 85% 82% EFFICIENCY (%) EFFICIENCY (%) 84% 80% 78% 76% 74% 72% 80% 75% 70% 65% 70% 68% 60% 2.5 3 3.5 4 4.5 5 2.5 5.5 VIN (V) 3 3.5 4 4.5 5 5.5 VIN (V) C002 Top to Bottom: 2x3, 2x4, 2x5, 2x6, 2x7, 2x8, 2x9, 2x10 (LEDs) C002 Top to Bottom: 2x3, 2x4, 2x5, 2x6, 2x7, 2x8, 2x9, 2x10 (LEDs) Figure 40. Efficiency vs VIN, Dual String Figure 41. Efficiency vs VIN, Dual String Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 39 LM3633 SNVS867 – JUNE 2014 www.ti.com VIN = 3.6 V, VLED = 3.2 V @ 20 mA, Typical Application Circuit, TA = 25°C, Full-Scale Current = 20.2 mA unless otherwise specified. Efficiency is VOUT × (IHVLED1 + IHVLED2 + IHVLED3)/(VIN × IIN), matching curves are (ΔILED_MAX/ILED_AVE). See Table 37. One String, L=4.7µH, 500kHz 90% 85% EFFICIENCY (%) 85% EFFICIENCY (%) One String, L=4.7µH, 1MHz 90% 80% 75% 80% 75% 70% 70% 65% 65% 2.5 3 3.5 4 4.5 5 5.5 2.5 3 3.5 VIN (V) 4 4.5 5 C002 Top to Bottom: 1x3, 1x4, 1x5, 1x6, 1x7, 1x8, 1x9, 1x10 (LEDs) C002 Top to Bottom: 1x3, 1x4, 1x5, 1x6, 1x7, 1x8, 1x9, 1x10 (LEDs) Figure 42. Efficiency vs VIN, Single String 88% 88% 86% 86% 84% 84% 82% 80% 78% 76% 82% 80% 78% 76% 74% 74% 72% 72% 70% 0.00 Three String, L=22µH, 1MHz 90% EFFICIENCY (%) EFFICIENCY (%) Figure 43. Efficiency vs VIN, Single String Three String, L=22µH, 500kHz 90% 70% 12.00 24.00 36.00 48.00 60.00 0 12 ILED (mA) 24 36 48 C002 C002 Top to Bottom: 3x3, 3x4, 3x5, 3x6 (LEDs) Figure 44. Efficiency vs ILED Two String, L=22µH, 500kHz Two String, L=22µH, 1MHz 90% 88% 88% 86% 86% 84% 84% EFFICIENCY (%) EFFICIENCY (%) Figure 45. Efficiency vs ILED 82% 80% 78% 76% 82% 80% 78% 76% 74% 74% 72% 72% 70% 70% 0 12 24 36 48 0 ILED (mA) 12 24 36 48 ILED (mA) C002 Top to Bottom: 2x3, 2x4, 2x5, 2x6, 2x7, 2x8, 2x9, 2x10 (LEDs) C002 Top to Bottom: 2x3, 2x4, 2x5, 2x6, 2x7, 2x8, 2x9, 2x10 (LEDs) Figure 46. Efficiency vs ILED 40 60 ILED (mA) Top to Bottom: 3x3, 3x4, 3x5, 3x6 (LEDs) 90% 5.5 VIN (V) Figure 47. Efficiency vs ILED Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 LM3633 www.ti.com SNVS867 – JUNE 2014 VIN = 3.6 V, VLED = 3.2 V @ 20 mA, Typical Application Circuit, TA = 25°C, Full-Scale Current = 20.2 mA unless otherwise specified. Efficiency is VOUT × (IHVLED1 + IHVLED2 + IHVLED3)/(VIN × IIN), matching curves are (ΔILED_MAX/ILED_AVE). See Table 37. Three String, L=10µH, 500kHz 88% 88% 86% 86% 84% 84% 82% 80% 78% 76% 82% 80% 78% 76% 74% 74% 72% 72% 70% 0.00 Three String, L=10µH, 1MHz 90% EFFICIENCY (%) EFFICIENCY (%) 90% 70% 12.00 24.00 36.00 48.00 60.00 0 12 24 ILED (mA) 36 48 C002 C002 Top to Bottom: 3x3, 3x4, 3x5, 3x6 (LEDs) Top to Bottom: 3x3, 3x4, 3x5, 3x6 (LEDs) Figure 48. Efficiency vs ILED Two String, L=10µH, 1MHz 90% 88% 88% 86% 86% 84% 84% EFFICIENCY (%) EFFICIENCY (%) Figure 49. Efficiency vs ILED Two String, L=10µH, 500kHz 90% 82% 80% 78% 76% 82% 80% 78% 76% 74% 74% 72% 72% 70% 70% 0 12 24 36 48 0 12 ILED (mA) 24 36 C002 C002 Top to Bottom: 2x3, 2x4, 2x5, 2x6, 2x7, 2x8, 2x9, 2x10 (LEDs) Figure 50. Efficiency vs ILED 86% 48 ILED (mA) Top to Bottom: 2x3, 2x4, 2x5, 2x6, 2x7, 2x8, 2x9, 2x10 (LEDs) Figure 51. Efficiency vs ILED Three String, L=4.7µH, 500kHz Three String, L=4.7µH, 1MHz 86% 84% 84% 82% EFFICIENCY (%) EFFICIENCY (%) 60 ILED (mA) 80% 78% 76% 82% 80% 78% 74% 76% 72% 70% 0.00 74% 12.00 24.00 36.00 48.00 0 60.00 ILED (mA) 12 24 36 48 60 ILED (mA) C002 Top to Bottom: 3x3, 3x4, 3x5, 3x6 (LEDs) C002 Top to Bottom: 3x3, 3x4, 3x5, 3x6 (LEDs) Figure 52. Efficiency vs ILED Figure 53. Efficiency vs ILED Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 41 LM3633 SNVS867 – JUNE 2014 www.ti.com VIN = 3.6 V, VLED = 3.2 V @ 20 mA, Typical Application Circuit, TA = 25°C, Full-Scale Current = 20.2 mA unless otherwise specified. Efficiency is VOUT × (IHVLED1 + IHVLED2 + IHVLED3)/(VIN × IIN), matching curves are (ΔILED_MAX/ILED_AVE). See Table 37. Two String, L=4.7µH, 500kHz Two String, L=4.7µH, 1MHz 86% 84% 84% 82% 82% EFFICIENCY (%) EFFICIENCY (%) 86% 80% 78% 76% 80% 78% 76% 74% 74% 72% 72% 70% 70% 0 12 24 36 48 0 12 24 ILED (mA) 36 48 ILED (mA) C002 Top to Bottom: 2x3, 2x4, 2x5, 2x6, 2x7, 2x8, 2x9, 2x10 (LEDs) C002 Top to Bottom: 2x3, 2x4, 2x5, 2x6, 2x7, 2x8, 2x9, 2x10 (LEDs) Figure 54. Efficiency vs ILED Figure 55. Efficiency vs ILED 1.00% 0.60% -35C 25C 90C 90C HVLED Matching 0.80% HVLED Matching 25C -35C 0.50% 0.60% 0.40% 0.20% 0.40% 0.30% 0.20% 0.10% 0.00% 0.00% 2.5 3 3.5 4 4.5 5 5.5 2.5 3 3.5 VIN (V) 4 4.5 5 5.5 VIN (V) C001 ILED = 20 mA C001 ILED = 20 mA Figure 56. HVLED Matching vs VIN, Temp Figure 57. LVLED Matching vs VIN, Temp 100.00 20.0% m12 m23 m31 15.0% HVLED Matching LED Current (mA) 10.00 1.00 0.10 25C 10.0% 5.0% 0.0% -5.0% -10.0% 0.01 -15.0% 2048 1920 1792 1664 1536 1408 1280 1152 1024 896 768 640 512 384 256 128 0 2048 1920 1792 1664 1536 1408 1280 1152 1024 896 768 640 512 384 256 128 0 11-bit Brightness Code 11-bit Brightness Code C001 Exponential Mapping C001 Exponential Mapping Figure 58. HVLED Current vs Code 42 Submit Documentation Feedback Figure 59. HVLED Matching vs Code Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 LM3633 www.ti.com SNVS867 – JUNE 2014 VIN = 3.6 V, VLED = 3.2 V @ 20 mA, Typical Application Circuit, TA = 25°C, Full-Scale Current = 20.2 mA unless otherwise specified. Efficiency is VOUT × (IHVLED1 + IHVLED2 + IHVLED3)/(VIN × IIN), matching curves are (ΔILED_MAX/ILED_AVE). See Table 37. 8.0% 20.0% m12 m23 m31 6.0% 15.0% 2.0% 0.0% -2.0% m23 m31 m45 m56 m64 10.0% LVLED Matching HVLED Matching 4.0% m12 5.0% 0.0% -5.0% -4.0% -6.0% -10.0% -8.0% -15.0% 256 240 224 208 192 176 160 144 128 112 96 80 64 48 32 16 0 2048 1920 1792 1664 1536 1408 1280 1152 1024 896 768 640 512 384 256 128 0 8-bit Brightness Code 11-bit Brightness Code C001 C001 Linear Mapping Exponential Mapping Figure 60. HVLED Matching vs Code Figure 61. LVLED Matching vs Code 25.00 20.0% 15.0% HVLED Current (mA) 20.00 LVLED Matching 10.0% 5.0% 0.0% -5.0% -10.0% -15.0% m12 m23 m31 m45 m56 m64 15.00 10.00 5.00 -35C 25C 90C 0.00 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 256 240 224 208 192 176 160 144 128 112 96 80 64 48 32 16 0 8-bit Brightness Code VHR_HV (V) C001 C001 Linear Mapping Figure 62. LVLED Matching vs Code Figure 63. HVLED Current vs Current Sink Headroom Voltage 25.00 1.1 1.08 Peak Current (A) LVLED Current (mA) 20.00 15.00 10.00 5.00 1.06 1.04 1.02 -35C 25C 90C 0.00 -35C 25C 90C 1 0.98 5.5 5.3 5.1 4.9 4.7 4.5 4.3 4.1 3.9 3.7 3.5 3.3 3.1 2.9 2.7 2.5 0.24 0.22 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 VIN (V) VHR_LV (V) C001 Figure 64. LVLED Current vs Current Sink Headroom Voltage C001 Figure 65. Closed Loop Current Limit vs VIN Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 43 LM3633 SNVS867 – JUNE 2014 www.ti.com VIN = 3.6 V, VLED = 3.2 V @ 20 mA, Typical Application Circuit, TA = 25°C, Full-Scale Current = 20.2 mA unless otherwise specified. Efficiency is VOUT × (IHVLED1 + IHVLED2 + IHVLED3)/(VIN × IIN), matching curves are (ΔILED_MAX/ILED_AVE). See Table 37. ILED Ripple Current (% of Full-Scale) 100 240 CP 2x Gain Current (mA) 220 10 1 0.1 90C 25C -35C 0.01 100 4.5 4.3 4.1 3.9 3.7 PWM Frequency (Hz) 3.5 10000 3.3 8000 25C 90C -35C 120 3.1 6000 140 2.9 4000 160 2.7 2000 180 2.5 0 200 VIN (V) C001 C001 50% Duty Cycle 2x Gain Figure 67. Charge Pump Output Short Circuit Current Limit vs VIN 350 0.4 300 0.35 Stand-By Current (mA) CP 1x Gain Current (mA) Figure 66. LED Current Ripple vs fPWM 250 200 150 0.25 0.2 -35C 25C 90C 100 0.3 90C 25C -35C 0.15 5.5 5.3 5.1 4.9 4.7 4.5 4.3 4.1 3.9 3.7 3.5 3.3 3.1 2.9 2.7 2.5 5.5 5.3 5.1 4.9 4.7 4.5 4.3 4.1 3.9 3.7 3.5 3.3 3.1 2.9 2.7 2.5 VIN (V) VIN (V) C001 1x Gain C001 Pattern Generator Enabled on LVLED1, LVLED2, LVLED3 Figure 68. Charge Pump Output Short Circuit Current Limit vs VIN 3x6 LEDs Figure 70. Start-up Response 44 Figure 69. Idle State Supply Current D = 30% To 90% ƒPWM = 10 kHz Figure 71. Response to Step Change in PWM Input Duty Cycle Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 LM3633 www.ti.com SNVS867 – JUNE 2014 VIN = 3.6 V, VLED = 3.2 V @ 20 mA, Typical Application Circuit, TA = 25°C, Full-Scale Current = 20.2 mA unless otherwise specified. Efficiency is VOUT × (IHVLED1 + IHVLED2 + IHVLED3)/(VIN × IIN), matching curves are (ΔILED_MAX/ILED_AVE). See Table 37. Typical Application Circuit 3 x 6 LEDs Figure 72. Line Step Response 8.3 Initialization Set Up Table 39 shows the minimum number of register writes required for a two-parallel, seven-series LED configuration. This example uses the default settings for ramp times (2048 μsec), mapping mode (exponential) and full-scale current (20.2 mA). In this mode of operation the LM3633 controls the brightness LSBs to ramp between the 8-bit MSB brightness levels providing 11-bit dimming while requiring only 8-bit commands from the host controller. Table 39. Control Bank A, 8-Bit Control, Two-String, Seven Series LED Configuration Example REGISTER NAME ADDRESS DATA DESCRIPTION HVLED Current Sink Output Configuration 0x10 0x04 HVLEDs 1 and 2 assigned to Control Bank A HVLED Current SInk Feedback Enables 0x28 0x03 Enable feedback on HVLEDs 1 and 2, disable feedback on HVLED 3 OVP = 32V, ƒsw = 500 kHz Boost Control 0x2D 0x04 Control Bank Enabled 0x2B 0x01 Enable Control Bank A Control A Brightness LSB 0x40 0x00 Control A Brightness LSB written only once Control A Brightness MSB 0x41 User Value Control A Brightness MSB updated as required Table 40 shows the minimum number of register writes required for a two-parallel, six-series LED configuration with PWM Enabled. This example uses the default settings for ramp times (2048 μsec), mapping mode (exponential) and full-scale current (20.2 mA). In this mode of operation the host controller must update both the brightness LSB and MSB registers whenever a brightness change is required. Table 40. Control Bank A, 11-Bit Control, Two-String, Six Series LED Configuration Example REGISTER NAME ADDRESS DATA DESCRIPTION HVLED Current Sink Output Configuration 0x10 0x04 HVLEDs 1 and 2 assigned to Control Bank A HVLED Current SInk Feedback Enables 0x28 0x03 Enable feedback on HVLEDs 1 and 2, disable feedback on HVLED 3 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 45 LM3633 SNVS867 – JUNE 2014 www.ti.com Table 40. Control Bank A, 11-Bit Control, Two-String, Six Series LED Configuration Example (continued) (1) REGISTER NAME ADDRESS DATA DESCRIPTION Boost Control 0x2D 0x03 OVP = 24V, ƒsw = 1 MHz PWM Configuration 0x2F 0x0D PWM Zero Detect = Enabled, PWM Polarity = Active HIgh, Control B PWM = Disabled, Control A PWM = Enabled Control Bank Enabled 0x2B 0x01 Enable Control Bank A Control A Brightness LSB 0x40 User Value Control A Brightness LSB written as required (NOTE: The Brightness LSB change does not take effect until the Brightness MSB register is written.) Control A Brightness MSB 0x41 User Value Control A Brightness MSB updated as required (1) Anytime the Brightness LSB is changed the Brightness MSB must be written for the Brightness LSB change to take effect.) Table 41 shows the minimum number of register writes required for five low-voltage indicator LEDs. This example uses the default settings for ramp times (2048 μs), mapping mode (exponential) and charge pump and can be combined with either Table 39 or Table 40 above paying careful attention to the Brightness Configuration and Control Bank Enable registers (these registers control both high-voltage and low-voltage LEDs). In this mode of operation the host controller must update both Controls C and F brightness whenever a low-voltage LED brightness change is required. In this example the indicator LEDs is not synchronized due to the time delay between configuration of the Control C and Control F brightness settings. If synchronization of the indicator LED timing is required the user must enable the Control Bank after writing all Control Bank brightness registers. Table 41. Control Bank A Enable with Control Bank C and Control Bank F Low-Voltage LED Configuration Example REGISTER NAME ADDRESS DATA DESCRIPTION LVLED Current Sink Output Configuration 0x11 0x20 LVLEDs 1, 2, and 3 assigned to Control Bank C LVLED 4, 5 assigned to Control Bank F, LVLED 6 assigned to Control Bank H Control C Full-Scale Current Setting 0x22 0x00 Set Full-Scale current to 5 mA Control F Full-Scale Current Setting 0x25 0x00 Set Full-Scale current to 5 mA LVLED Current SInk Feedback Enables 0x29 0x1F Enable feedback on LVLEDs 1, 2, 3, 4, 5; LVLED 6 disabled Enable LVLED Control Banks F and C with HVLED Control Bank A (If synchronization of indicator LEDs is required enable Control Bank after Control Banks C and F Brightness register configuration) Control Bank Enable 0x2B 0x25 Control C Brightness 0x44 User Value Control C Brightness written as required Control F Brightness 0x47 User Value Control F Brightness updated as required Table 42 shows the minimum number of register writes required to configure the pattern generator for all six lowvoltage indicator LEDs. This pattern sequences through all six indicator LEDs using a uniform delay time of 196.608 ms. Table 42. Low Voltage LED Pattern Generator Configuration Example REGISTER NAME ADDRESS DATA DESCRIPTION LVLED Current Sink Output Configuration 0x11 0x36 All low-voltage LED current sinks assigned to independent Control Banks Control C Start-up/Shutdown Ramp Time 0x14 0x33 Set Start-up and Shutdown Ramp time to 1.049 seconds Control D Start-up/Shutdown Ramp Time 0x15 0x33 Set Start-up and Shutdown Ramp time to 1.049 seconds Control E Start-up/Shutdown Ramp Time 0x16 0x33 Set Start-up and Shutdown Ramp time to 1.049 seconds Control F Start-up/Shutdown Ramp Time 0x17 0x33 Set Start-up and Shutdown Ramp time to 1.049 seconds 46 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 LM3633 www.ti.com SNVS867 – JUNE 2014 Table 42. Low Voltage LED Pattern Generator Configuration Example (continued) REGISTER NAME ADDRESS DATA DESCRIPTION Control G Start-up/Shutdown Ramp Time 0x18 0x33 Set Start-up and Shutdown Ramp time to 1.049 seconds Control H Start-up/Shutdown Ramp Time 0x19 0x33 Set Start-up and Shutdown Ramp time to 1.049 seconds Control C//D/E Ramp Time 0x1C 0x33 Set Ramp Up/Down Transition time to 1.049 seconds Control F/G/H Ramp Time 0x1D 0x33 Set Ramp Up/Down Transition time to 1.049 seconds Control C Full-Scale Current Setting 0x22 0x00 Set Full-Scale current to 5 mA Control D Full-Scale Current Setting 0x23 0x00 Set Full-Scale current to 5 mA Control E Full-Scale Current Setting 0x24 0x00 Set Full-Scale current to 5 mA Control F Full-Scale Current Setting 0x25 0x00 Set Full-Scale current to 5 mA Control G Full-Scale Current Setting 0x26 0x00 Set Full-Scale current to 5 mA Control H Full-Scale Current Setting 0x27 0x00 Set Full-Scale current to 5 mA Control C Brightness 0x44 0xA5 Control C Brightness Control D Brightness 0x45 0xA5 Control D Brightness Control E Brightness 0x46 0xA5 Control E Brightness Control F Brightness 0x47 0xA5 Control F Brightness Control G Brightness 0x48 0xA5 Control G Brightness Control H Brightness 0x49 0xA5 Control H Brightness Control C Pattern Generator Delay Time 0x50 0x00 Set Control C Delay time to 16.384 ms Control D Pattern Generator Delay Time 0x60 0x0C Set Control D Delay time to 212.992 ms Control E Pattern Generator Delay Time 0x70 0x18 Set Control E Delay time to 409.6 ms Control F Pattern Generator Delay Time 0x80 0x24 Set Control F Delay time to 606.208 ms Control G Pattern Generator Delay Time 0x90 0x30 Set Control G Delay time to 802.816 ms Control H Pattern Generator Delay Time 0xA0 0x3C Set Control H Delay time to 999.424 ms Control C Pattern Generator Low Time 0x51 0x3A Set Control C Low Time to 950.27 ms Control D Pattern Generator Low Time 0x61 0x3A Set Control D Low Time to 950.27 ms Control E Pattern Generator Low Time 0x71 0x3A Set Control E Low Time to 950.27 ms Control F Pattern Generator Low Time 0x81 0x3A Set Control F Low Time to 950.27 ms Control G Pattern Generator Low Time 0x91 0x3A Set Control G Low Time to 950.27 ms Control H Pattern Generator Low Time 0xA1 0x3A Set Control H Low Time to 950.27 ms Control C Pattern Generator High Time 0x52 0x40 Set Control C High Time to 1507.33 ms Control D Pattern Generator High Time 0x62 0x40 Set Control D High Time to 1507.33 ms Control E Pattern Generator High Time 0x72 0x40 Set Control E High Time to 1507.33 ms Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 47 LM3633 SNVS867 – JUNE 2014 www.ti.com Table 42. Low Voltage LED Pattern Generator Configuration Example (continued) REGISTER NAME ADDRESS DATA DESCRIPTION Control F Pattern Generator High Time 0x82 0x40 Set Control F High Time to 1507.33 ms Control G Pattern Generator High Time 0x92 0x40 Set Control G High Time to 1507.33 ms Control H Pattern Generator High Time 0xA2 0x40 Set Control H High Time to 1507.33 ms Control C Pattern Generator Low-Level Brightness 0x53 0x01 Set Control C Low-Level Brightness Control D Pattern Generator Low-Level Brightness 0x63 0x01 Set Control D Low-Level Brightness Control E Pattern Generator Low-Level Brightness 0x73 0x01 Set Control E Low-Level Brightness Control F Pattern Generator Low-Level Brightness 0x83 0x01 Set Control F Low-Level Brightness Control G Pattern Generator Low-Level Brightness 0x93 0x01 Set Control G Low-Level Brightness Control H Pattern Generator Low-Level Brightness 0xA3 0x01 Set Control H Low-Level Brightness Pattern Generator Enables 0x2C 0xFC Enable Control Bank C/D/E/F/G/H Pattern Generators Control Bank Enables 0x2B 0xFC Enable Control Banks C/D/E/F/G/H 9 Power Supply Recommendations The LM3633 is designed to operate from an input supply range of 2.7 V to 5.5 V. This input supply should be well regulated and provide the peak current required by the High-voltage LED and Low-voltage LED configurations. 10 Layout 10.1 Layout Guidelines (Boost) The LM3633 inductive boost converter detects a high switched voltage (up to VOVP) at the SW pin, and a step current (up to ICL_BOOST) through the Schottky diode and output capacitor each switching cycle. The high switching voltage can create interference into nearby nodes due to electric field coupling (I = Cdv/dt). The large step current through the diode and the output capacitor can cause a large voltage spike at the SW pin and the OVP pin due to parasitic inductance in the step current conducting path (V = Ldi/dt). Board layout guidelines are geared towards minimizing this electric field coupling and conducted noise. Figure 73 highlights these two noisegenerating components. 48 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 LM3633 www.ti.com SNVS867 – JUNE 2014 Layout Guidelines (Boost) (continued) Voltage Spike (VSPIKE) VOUT + VF Schottky Pulsed voltage at SW Current through Schottky and COUT IPEAK Current through inductor IAVE = IIN Parasitic Circuit Board Inductances Affected Node due to capacitive coupling Cp1 L Lp1 D1 Lp2 2.7V to 5.5V VIN LCD Display Up to 40V C OUT SW IN 10 k: 10 k: SCL SDA Lp3 C IN SCL LM3633 OVP SDA HVLED1 HVLED2 HVLED3 GND Figure 73. LM3633 Inductive Boost Converter Showing Pulsed Voltage at SW (High dv/dt) and Current Through Schottky and COUT (High di/dt) The following list details the main (layout sensitive) areas of the LM3633 inductive boost converter in order of decreasing importance: 1. Output Capacitor – Schottky Cathode to COUT+ – COUT− to GND 2. Schottky Diode – SW pin to Schottky Anode – Schottky Cathode to COUT+ 3. Inductor – SW Node PCB capacitance to other traces 4. Input Capacitor – CIN+ to IN pin Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 49 LM3633 SNVS867 – JUNE 2014 www.ti.com Layout Guidelines (Boost) (continued) 10.1.1 Boost Output Capacitor Placement Because the output capacitor is in the path of the inductor current discharge path it sees a high-current step from 0 to IPEAK each time the switch turns off and the Schottky diode turns on. Any inductance along this series path from the cathode of the diode through COUT and back into the LM3633 GND pin contributes to voltage spikes (VSPIKE = LP_ × di/dt) at SW and OUT. These spikes can potentially over-voltage the SW pin, or feed through to GND. To avoid this, COUT+ must be connected as close as possible to the Cathode of the Schottky diode, and COUT− must be connected as close as possible to the LM3633 GND bump. The best placement for COUT is on the same layer as the LM3633 so as to avoid any vias that can add excessive series inductance. 10.1.2 Schottky Diode Placement In the LM3633 boost circuit the Schottky diode is in the path of the inductor current discharge. As a result the Schottky diode sees a high-current step from 0 to IPEAK each time the switch turns off and the diode turns on. Any inductance in series with the diode causes a voltage spike (VSPIKE = LP_ × di/dt) at SW and OUT. This can potentially over-voltage the SW pin, or feed through to VOUT and through the output capacitor and into GND. Connecting the anode of the diode as close as possible to the SW pin and the cathode of the diode as close as possible to COUT+ reduces the inductance (LP_) and minimize these voltage spikes. 10.1.3 Inductor Placement The node where the inductor connects to the LM3633 SW pin has 2 considerations. First, a large switched voltage (0 to VOUT + VF_SCHOTTKY) appears on this node every switching cycle. This switched voltage can be capacitively coupled into nearby nodes. Second, there is a relatively large current (input current) on the traces connecting the input supply to the inductor and connecting the inductor to the SW pin. Any resistance in this path can cause voltage drops that can negatively affect efficiency and reduce the input operating voltage range. To reduce the capacitive coupling of the signal on SW into nearby traces, the SW bump-to-inductor connection must be minimized in area. This limits the PCB capacitance from SW to other traces. Additionally, highimpedance nodes that are more susceptible to electric field coupling need to be routed away from SW and not directly adjacent or beneath. This is especially true for traces such as SCL, SDA, HWEN, and PWM. A GND plane placed directly below SW dramatically reduces the capacitance from SW into nearby traces. Lastly, limit the trace resistance of the VIN-to-inductor connection and from the inductor-to-SW connection, by use of short, wide traces. 10.1.4 Boost Input Capacitor Placement For the LM3633 boost converter, the input capacitor filters the inductor current ripple, and the internal MOSFET driver currents during turnon of the internal power switch. The driver current requirement can range from 50 mA at 2.7 V to over 200 mA at 5.5 V with fast durations of approximately 10 ns to 20 ns. This appears as high di/dt current pulses coming from the input capacitor each time the switch turns on. Close placement of the input capacitor to the IN pin and to the GND pin is critical since any series inductance between IN and CIN+ or CIN− and GND can create voltage spikes that could appear on the VIN supply line and in the GND plane. Close placement of the input bypass capacitor at the input side of the inductor is also critical. The source impedance (inductance and resistance) from the input supply, along with the input capacitor of the LM3633, form a series RLC circuit. If the output resistance from the source (RS) is low enough the circuit is underdamped and has a resonant frequency (typically the case). Depending on the size of LS the resonant frequency could occur below, close to, or above the LM3633 switching frequency. This can cause the supply current ripple to be: 1. Approximately equal to the inductor current ripple when the resonant frequency occurs well above the LM3633 switching frequency; 2. Greater than the inductor current ripple when the resonant frequency occurs near the switching frequency; or 3. Less than the inductor current ripple when the resonant frequency occurs well below the switching frequency. Figure 74 shows the series RLC circuit formed from the output impedance of the supply and the input capacitor. The circuit is redrawn for the AC case where the VIN supply is replaced with a short to GND and the LM3633 + Inductor is replaced with a current source (ΔIL). Equation 1 is the criteria for an underdamped response. Equation 2 is the resonant frequency. Equation 3 is the approximated supply current ripple as a function of LS, RS, and CIN. 50 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 LM3633 www.ti.com SNVS867 – JUNE 2014 Layout Guidelines (Boost) (continued) As an example, consider a 3.6-V supply with 0.1 Ω of series resistance connected to CIN through 50 nH of connecting traces. This results in an under-damped input-filter circuit with a resonant frequency of 712 kHz. Since both the 1-MHz and 500-kHz switching frequency options lie close to the resonant frequency of the input filter, the supply current ripple is probably larger than the inductor current ripple. In this case, using equation 3, the supply current ripple can be approximated as 1.68 times the inductor current ripple (using a 500 kHz switching frequency) and 0.86 times the inductor current ripple using a 1-MHz switching frequency. Increasing the series inductance (LS) to 500 nH causes the resonant frequency to move to around 225 kHz, and the supply current ripple to be approximately 0.25 times the inductor current ripple (500-kHz switching frequency) and 0.053 times for a 1-MHz switching frequency. 'IL ISUPPLY RS LS L SW + IN VIN Supply LM3633 - CIN ISUPPLY LS RS CIN 'IL 2 1. RS 1 > LS x CIN 4 x LS2 2. f RESONANT = 1 2S LS x CIN 3. I SUPPLYRIPP LE | 'IL x 1 2S x 500 kHz x CIN 2 · § 1 2 ¸ RS + ¨¨2S x 500 kHz x LS ¸ 2 S x 500 kHz x C IN ¹ © Figure 74. Input RLC Network 10.2 Layout Guidelines (Charge Pump) The charge pump basically has three areas of concern regarding component placement: 1. The flying capacitor (CP) 2. The output capacitor (CPOUT) 3. The input capacitor 10.2.1 Flying Capacitor (CP) Placement The charge pump flying capacitor must quickly charge up to the input voltage and then supply the current to the output every switching cycle. Since the charge-pump switching frequency is 1 MHz, the capacitor must be a lowinductance and low-resistive ceramic. Additionally, there must be a low-inductive connection from CP to the LM3633 flying capacitor pin C+ and C−. This is accomplished by placing CP as close as possible to the LM3633 and on the same layer to avoid vias. Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 51 LM3633 SNVS867 – JUNE 2014 www.ti.com Layout Guidelines (Charge Pump) (continued) 10.2.2 Output Capacitor (CPOUT) Placement The charge pump output capacitor sees the switched charge from the flying capacitor every switching cycle (1 MHz). This fast switching action requires that a low inductive and low resistive capacitor (ceramic) be used and that CPOUT be connected to the LM3633 CPOUT pin with a low inductive connection. This is done by placing CPOUT as close as possible to the CPOUT and GND pins of the LM3633 and on the same layer as the LM3633 to avoid vias. 10.2.3 Charge Pump Input Capacitor Placement The input capacitor for the LM3633 charge pump is the same one used for the LM3633 inductive boost converter (see Boost Input Capacitor Placement section). 10.3 Layout Example SCL SDA CP CPOUT CIN L IN GND HVLED1 3.9 mm HVLED2 SW HVLED3 LVLED1 HWEN LVLED6 Schottky COUT OVP LVLED2 LVLED3 LVLED4 LVLED5 PWM 6.9 mm Figure 75. LM3633 Example Layout 52 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 LM3633 www.ti.com SNVS867 – JUNE 2014 11 Device and Documentation Support 11.1 Device Support 11.1.1 Third-Party Products Disclaimer TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE. 11.2 Trademarks All trademarks are the property of their respective owners. 11.3 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 11.4 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: LM3633 53 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) LM3633YFQR ACTIVE DSBGA YFQ 20 3000 RoHS & Green SNAGCU Level-1-260C-UNLIM -40 to 85 633B (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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