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LM4050-N, LM4050-N-Q1
SNOS455G – MAY 2000 – REVISED SEPTEMBER 2015
LM4050-N/-Q1 Precision Micropower Shunt Voltage Reference
1 Features
3 Description
•
•
•
•
Ideal for space-critical applications, the LM4050-N
precision voltage reference is available in the subminiature (3 mm × 1.3 mm) SOT-23 surface-mount
package. The LM4050-N design eliminates the need
for an external stabilizing capacitor while ensuring
stability with any capacitive load, thus making the
LM4050-N easy to use. Further reducing design effort
is the availability of several fixed reverse breakdown
voltages: 2.048 V, 2.5 V, 4.096 V, 5 V, 8.192 V, and
10 V. The minimum operating current increases from
60 μA for the LM4050-N-2.0 to 100 μA for the
LM4050-N-10.0. All versions have a maximum
operating current of 15 mA.
1
•
Small Package: SOT-23
No Output Capacitor Required
Tolerates Capacitive Loads
Fixed Reverse Breakdown Voltages of 2.048 V,
2.5 V, 4.096 V, 5 V, 8.192 V, and 10 V
Key Specifications (LM4050-N)
– Output Voltage Tolerance (A Grade, 25°C)
±0.1% (Maximum)
– Low Output Noise (10 Hz to 10 kHz) 41 μVrms
(Typical)
– Wide Operating Current Range 60 μA to 15
mA
– Industrial Temperature Range −40°C to 85°C
– Extended Temperature Range −40°C to 125°C
– Low Temperature Coefficient 50 ppm/°C (max)
– LM4050-N-Q1 is AEC-Q100 Grade 1 Qualified
and are Manufactured on an Automotive
Grade Flow
All grades and voltage options of the LM4050-N are
available in both an industrial temperature range
(−40°C and 85°C) and an extended temperature
range (−40°C and 125°C).
2 Applications
•
•
•
•
•
•
•
•
The LM4050-N utilizes fuse and Zener-zap reverse
breakdown voltage trim during wafer sort to ensure
that the prime parts have an accuracy of better than
±0.1% (A grade) at 25°C. Bandgap reference
temperature drift curvature correction and low
dynamic
impedance
ensure
stable
reverse
breakdown voltage accuracy over a wide range of
operating temperatures and currents.
Portable, Battery-Powered Equipment
Data Acquisition Systems
Instrumentation
Process Control
Energy Management
Product Testing
Automotive
Precision Audio Components
Device Information(1)
PART NUMBER
LM4050-N
LM4050-N-Q1
PACKAGE
SOT-23 (3)
BODY SIZE (NOM)
2.92 mm × 1.30 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Shunt Regulator Schematic
IQ+IL
IL
Vout
Vs
Rs
Cathode
Anode
IQ
Cout
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM4050-N, LM4050-N-Q1
SNOS455G – MAY 2000 – REVISED SEPTEMBER 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
6.10
6.11
7
8
1
1
1
2
3
3
Absolute Maximum Ratings ...................................... 3
ESD Ratings.............................................................. 3
Recommended Operating Conditions ...................... 4
Thermal Information .................................................. 4
Electrical Characteristics: 2-V Option ....................... 5
Electrical Characteristics: 2.5-V Option .................... 6
Electrical Characteristics: 4.1-V Option .................... 7
Electrical Characteristics: 5-V Option ...................... 8
Electrical Characteristics: 8.2-V Option ................... 9
Electrical Characteristics: 10-V Option ................ 10
Typical Characteristics .......................................... 11
Parameter Measurement Information ................ 12
Detailed Description ............................................ 13
8.1
8.2
8.3
8.4
9
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
13
13
13
13
Application and Implementation ........................ 14
9.1 Application Information............................................ 14
9.2 Typical Applications ................................................ 15
10 Power Supply Recommendations ..................... 21
11 Layout................................................................... 21
11.1 Layout Guidelines ................................................. 21
11.2 Layout Example .................................................... 21
12 Device and Documentation Support ................. 22
12.1
12.2
12.3
12.4
12.5
Related Links ........................................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
22
22
22
22
22
13 Mechanical, Packaging, and Orderable
Information ........................................................... 22
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision F (June 2015) to Revision G
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section .................................................................................................. 1
•
Removed Vapor Phase and Infrared Lead Temperatures from Abs Max Ratings table. ...................................................... 3
Changes from Revision E (April 2013) to Revision F
Page
•
Deleted "-25" from (LM4050-N) in Key Specifications title and "A/-Q1B/-Q1C" from Key Specification re: auto grade ........ 1
•
Added Maximum Junction Temperature to Abs Max Ratings table ...................................................................................... 3
•
Added table notes to Operating Ratings table to clarify operating and high junction temperature ranges ............................ 4
•
Deleted "-N" from part numbers in EC table "Limits" column headers .................................................................................. 5
Changes from Revision D (April 2013) to Revision E
•
2
Page
Changed layout of National Data Sheet to TI format ........................................................................................................... 20
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Copyright © 2000–2015, Texas Instruments Incorporated
Product Folder Links: LM4050-N LM4050-N-Q1
LM4050-N, LM4050-N-Q1
www.ti.com
SNOS455G – MAY 2000 – REVISED SEPTEMBER 2015
5 Pin Configuration and Functions
DBZ Package
3-Pin SOT-23
Top View
*This pin must be left floating or connected to pin 2.
Pin Functions
PIN
NAME
I/O
NO.
DESCRIPTION
Cathode
1
I/O
Shunt current and input voltage
Anode
2
O
Common pin, normally connected to ground
NC
3
—
No internal connection
6 Specifications
6.1 Absolute Maximum Ratings
See
(1) (2)
,
MAX
UNIT
Reverse Current
MIN
20
mA
Forward Current
10
mA
280
mW
150
°C
150
°C
Power Dissipation (TA = 25°C)
(3)
Maximum Junction Temperature
(4)
Storage Temperature
(1)
(2)
(3)
(4)
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature),
RθJA (junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any
temperature is PDmax = (TJmax − TA)/RθJA or the number given in the Absolute Maximum Ratings, whichever is lower. For the LM4050-N,
TJmax = 150°C, and the typical thermal resistance (RθJA), when board mounted, is 326°C/W for the SOT-23 package.
High junction temperatures degrade operating lifetimes. Operating lifetime is de-rated for junction temperatures greater than 125°C.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic
discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged device model (CDM), per JEDEC specification JESD22-C101 (2)
±1000
Machine model (MM)
±200
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
Copyright © 2000–2015, Texas Instruments Incorporated
Product Folder Links: LM4050-N LM4050-N-Q1
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LM4050-N, LM4050-N-Q1
SNOS455G – MAY 2000 – REVISED SEPTEMBER 2015
www.ti.com
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
Industrial Temperature Range
Extended Temperature Range
(1)
(2)
(1) (2)
MIN
MAX
UNIT
Ambient Temperature Range
–40
85
°C
Junction Temperature Range
–40
85
°C
Ambient Temperature Range
–40
125
°C
Junction Temperature
–40
125
°C
The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature),
RθJA (junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any
temperature is PDmax = (TJmax − TA)/RθJA or the number given in the Absolute Maximum Ratings, whichever is lower. For the LM4050-N,
TJmax = 150°C, and the typical thermal resistance (RθJA), when board mounted, is 326°C/W for the SOT-23 package.
Recommended Operating Conditions are conditions under the device is intended to be functional. For specifications and conditions, see
Electrical Characteristics section.
6.4 Thermal Information
LM4050-N/-Q1
THERMAL METRIC (1)
DBZ (SOT-23)
UNIT
3 PINS
RθJA
Junction-to-ambient thermal resistance
287
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
106.6
°C/W
RθJB
Junction-to-board thermal resistance
57.7
°C/W
ψJT
Junction-to-top characterization parameter
5.5
°C/W
ψJB
Junction-to-board characterization parameter
56.4
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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Product Folder Links: LM4050-N LM4050-N-Q1
LM4050-N, LM4050-N-Q1
www.ti.com
SNOS455G – MAY 2000 – REVISED SEPTEMBER 2015
6.5 Electrical Characteristics: 2-V Option
All other limits TA = TJ = 25°C. The grades A, B and C designate initial Reverse Breakdown Voltage tolerances of ±0.1%,
±0.2%, and 0.5% respectively.
PARAMETER
TEST CONDITIONS
Reverse Breakdown Voltage
IR = 100 μA
IR = 100 μA
VR
Reverse breakdown voltage
tolerance (3)
Industrial temperature range
TA = TJ = TMIN to TMAX
Extended temperature range
TA = TJ = TMIN to TMAX
MIN (1)
TYP (2)
2.048
±2.048
LM4050BIM3, LM4050BEM3
±4.096
LM4050CIM3, LM4050CEM3
±1024
LM4050AIM3, LM4050AEM3
±9.0112
LM4050BIM3, LM4050BEM3
±11.4688
LM4050CIM3, LM4050CEM3
±14.7456
LM4050AIM3, LM4050AEM3
±12.288
LM4050BIM3, LM4050BEM3
±14.7456
Minimum operating current
ΔVR/ΔT
Average reverse breakdown
voltage temperature
coefficient (3)
TA = TJ = 25°C
ΔVR/ΔIR
Reverse breakdown voltage
change with operating current
change (4)
60
65
IR = 10 mA
±20
IR = 1 mA
±15
IR = 100 μA, TA = TJ = 25°C
±15
IR = 100 μA,
TA = TJ = TMIN to TMAX
μA
ppm/°C
±50
0.3
IRMIN ≤ IR ≤ 1 mA,
TA = TJ = TMIN to TMAX
1 mA ≤ IR ≤ 15 mA, TA = TJ = 25°C
mV
±17.2032
41
TA = TJ = TMIN to TMAX
IRMIN ≤ IR ≤ 1 mA, TA = TJ = 25°C
UNIT
V
LM4050AIM3, LM4050AEM3
LM4050CIM3, LM4050CEM3
IRMIN
MAX (1)
0.8
1.2
2.3
1 mA ≤ IR ≤ 15 mA,
TA = TJ = TMIN to TMAX
6
mV
8
ZR
Reverse dynamic impedance
IR = 1 mA, f = 120 Hz, IAC = 0.1 IR
0.3
Ω
eN
Wideband noise
IR = 100 μA, 10 Hz ≤ f ≤ 10 kHz
34
μVrms
ΔVR
Reverse breakdown voltage
long term stability
t = 1000 hrs, T = 25°C ±0.1°C, IR = 100 μA
120
ppm
ΔT = −40°C to 125°C
0.7
mV
VHYST
(1)
(2)
(3)
(4)
(5)
Thermal hysteresis
(5)
Limits are 100% production tested at 25°C. Limits over temperature are guaranteed through correlation using Statistical Quality Control
(SQC) methods. The limits are used to calculate National's AOQL.
Typicals are at TJ = 25°C and represent most likely parametric norm.
The overtemperature limit for Reverse Breakdown Voltage Tolerance is defined as the room temperature Reverse Breakdown Voltage
Tolerance ±[(ΔV R/ΔT)(maxΔT)(VR)]. Where, ΔVR/ΔT is the VR temperature coefficient, maxΔT is the maximum difference in temperature
from the reference point of 25°C to T MIN or TMAX, and VR is the reverse breakdown voltage. The total overtemperature tolerance for the
different grades in the industrial temperature range where maxΔT = 65°C is shown below:
A-grade: ±0.425% = ±0.1% ±50 ppm/°C ×
65°C
B-grade: ±0.525% = ±0.2% ±50 ppm/°C × 65°C
C-grade: ±0.825% = ±0.5% ±50 ppm/°C × 65°C. Therefore, as an
example, the A-grade LM4050-N-2.5 has an overtemperature Reverse Breakdown Voltage tolerance of ±2.5V × 0.425% = ±11 mV.
Load regulation is measured on pulse basis from no load to the specified load current. Output changes due to die temperature change
must be taken into account separately.
Thermal hysteresis is defined as the difference in voltage measured at 25°C after cycling to temperature –40°C and the 25°C
measurement after cycling to temperature 125°C.
Copyright © 2000–2015, Texas Instruments Incorporated
Product Folder Links: LM4050-N LM4050-N-Q1
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LM4050-N, LM4050-N-Q1
SNOS455G – MAY 2000 – REVISED SEPTEMBER 2015
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6.6 Electrical Characteristics: 2.5-V Option
All other limits TA = TJ = 25°C. The grades A, B and C designate initial Reverse Breakdown Voltage tolerances of ±0.1%,
±0.2%, and 0.5% respectively.
PARAMETER
MIN (1)
TEST CONDITIONS
IR = 100 μA
Reverse breakdown voltage
VR
TYP (2)
2.500
LM4050AIM3, LM4050AEM3
IR = 100 μA
Industrial temperature range,
TA = TJ = TMIN to TMAX
Reverse breakdown voltage
tolerance (3)
Extended temperature range,
TA = TJ = TMIN to TMAX
Minimum operating current
V
LM4050BIM3, LM4050BEM3
±5
LM4050CIM3, LM4050CEM3
±13
LM4050AIM3, LM4050AEM3
±11
LM4050BIM3, LM4050BEM3
±24
LM4050CIM3, LM4050CEM3
±21
LM4050AIM3, LM4050AEM3
±15
LM4050BIM3, LM4050BEM3
±18
TA = TJ = 25°C
UNIT
±2.5
LM4050CIM3, LM4050CEM3
IRMIN
MAX (1)
mV
mV
±25
41
TA = TJ = TMIN to TMAX
60
65
IR = 10 mA
±20
IR = 1 mA
±15
IR = 100 μA, TA = TJ = 25°C
±15
μA
ΔVR/ΔT
Average reverse breakdown
voltage temperature coefficient (3)
IRMIN ≤ IR ≤ 1 mA, TA = TJ = 25°C
ΔVR/ΔIR
Reverse breakdown voltage
change with operating current
change (4)
Reverse breakdown voltage
change with operating current
change (4)
1 mA ≤ IR ≤ 15 mA, TA = TJ = 25°C
ΔVR/ΔIR
ZR
Reverse dynamic impedance
IR = 1 mA, f = 120 Hz, IAC = 0.1 IR
0.3
Ω
eN
Wideband noise
IR = 100 μA, 10 Hz ≤ f ≤ 10 kHz
41
μVrms
ΔVR
Reverse breakdown voltage long
term stability
120
ppm
07
mV
IR = 100 μA, TA = TJ = TMIN to TMAX
VHYST
(1)
(2)
(3)
(4)
(5)
6
Thermal hysteresis
(5)
ppm/°C
±50
0.3
IRMIN ≤ IR ≤ 1 mA
TA = TJ = TMIN to TMAX
0.8
1.2
2.3
1 mA ≤ IR ≤ 15 mA,
TA = TJ = TMIN to TMAX
6
8
t = 1000 hrs, T = 25°C ±0.1°C, IR = 100 μA
ΔT = −40°C to 125°C
mV
mV
Limits are 100% production tested at 25°C. Limits over temperature are guaranteed through correlation using Statistical Quality Control
(SQC) methods. The limits are used to calculate National's AOQL.
Typicals are at TJ = 25°C and represent most likely parametric norm.
The overtemperature limit for Reverse Breakdown Voltage Tolerance is defined as the room temperature Reverse Breakdown Voltage
Tolerance ±[(ΔV R/ΔT)(maxΔT)(VR)]. Where, ΔVR/ΔT is the VR temperature coefficient, maxΔT is the maximum difference in temperature
from the reference point of 25°C to T MIN or TMAX, and VR is the reverse breakdown voltage. The total overtemperature tolerance for the
different grades in the industrial temperature range where maxΔT = 65°C is shown below:
A-grade: ±0.425% = ±0.1% ±50 ppm/°C ×
65°C
B-grade: ±0.525% = ±0.2% ±50 ppm/°C × 65°C
C-grade: ±0.825% = ±0.5% ±50 ppm/°C × 65°C. Therefore, as an
example, the A-grade LM4050-N-2.5 has an overtemperature Reverse Breakdown Voltage tolerance of ±2.5V × 0.425% = ±11 mV.
Load regulation is measured on pulse basis from no load to the specified load current. Output changes due to die temperature change
must be taken into account separately.
Thermal hysteresis is defined as the difference in voltage measured at 25°C after cycling to temperature –40°C and the 25°C
measurement after cycling to temperature 125°C.
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Product Folder Links: LM4050-N LM4050-N-Q1
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SNOS455G – MAY 2000 – REVISED SEPTEMBER 2015
6.7 Electrical Characteristics: 4.1-V Option
All other limits TA = TJ = 25°C. The grades A, B and C designate initial Reverse Breakdown Voltage tolerances of ±0.1%,
±0.2%, and 0.5% respectively.
PARAMETER
Reverse Breakdown Voltage
TEST CONDITIONS
IR = 100 μA
IR = 100 μA
VR
Reverse Breakdown Voltage
Tolerance (2)
Industrial temperature range,
TA = TJ = TMIN to TMAX
Extended temperature range,
TA = TJ = TMIN to TMAX
MIN
TYP (1)
±4.1
LM4050BIM3,LM4050BEM3
±8.2
LM4050CIM3, LM4050CEM3
±21
LM4050AIM3, LM4050AEM3
±18
LM4050BIM3,LM4050BEM3
±22
LM4050CIM3, LM4050CEM3
±34
LM4050AIM3, LM4050AEM3
±25
LM4050BIM3,LM4050BEM3
±29
TA = TJ = 25°C
Minimum Operating Current
Average reverse breakdown voltage
temperature coefficient (2)
Industrial temperature range,
TA = TJ = TMIN to TMAX
68
μA
73
78
IR = 10 mA
±30
IR = 1 mA
±20
IR = 100 μA, TA = TJ = 25°C
±20
IR = 100 μA, TA = TJ = TMIN to TMAX
IRMIN ≤ IR ≤ 1 mA, TA = TJ = 25°C
mV
±41
52
Extended temperature range, TA = TJ = TMIN to TMAX
ΔVR/ΔT
UNIT
V
LM4050AIM3, LM4050AEM3
LM4050CIM3, LM4050CEM3
IRMIN
MAX
4.096
ppm/°C
±50
0.2
IRMIN ≤ IR ≤ 1 mA, TA = TJ = TMIN to TMAX
0.9
1.2
ΔVR/ΔIR
Reverse breakdown voltage change
with operating current change (3)
ZR
Reverse dynamic impedance
IR = 1 mA, f = 120 Hz, IAC = 0.1 IR
0.5
Ω
eN
Wideband noise
IR = 100 μA, 10 Hz ≤ f ≤ 10 kHz
93
μVrms
ΔVR
Reverse breakdown voltage long
term stability
120
ppm
1.148
mV
1 mA ≤ IR ≤ 15 mA, TA = TJ = 25°C
2
1 mA ≤ IR ≤ 15 mA, TA = TJ = TMIN to TMAX
VHYST
(1)
(2)
(3)
(4)
Thermal hysteresis
(4)
t = 1000 hrs, T = 25°C ±0.1°C, IR = 100 μA
ΔT = −40°C to 125°C
7
mV
10
Typicals are at TJ = 25°C and represent most likely parametric norm.
The overtemperature limit for Reverse Breakdown Voltage Tolerance is defined as the room temperature Reverse Breakdown Voltage
Tolerance ±[(ΔV R/ΔT)(maxΔT)(VR)]. Where, ΔVR/ΔT is the VR temperature coefficient, maxΔT is the maximum difference in temperature
from the reference point of 25°C to T MIN or TMAX, and VR is the reverse breakdown voltage. The total overtemperature tolerance for the
different grades in the industrial temperature range where maxΔT = 65°C is shown below:
A-grade: ±0.425% = ±0.1% ±50 ppm/°C ×
65°C
B-grade: ±0.525% = ±0.2% ±50 ppm/°C × 65°C
C-grade: ±0.825% = ±0.5% ±50 ppm/°C × 65°C. Therefore, as an
example, the A-grade LM4050-N-2.5 has an overtemperature Reverse Breakdown Voltage tolerance of ±2.5V × 0.425% = ±11 mV.
Load regulation is measured on pulse basis from no load to the specified load current. Output changes due to die temperature change
must be taken into account separately.
Thermal hysteresis is defined as the difference in voltage measured at 25°C after cycling to temperature –40°C and the 25°C
measurement after cycling to temperature 125°C.
Copyright © 2000–2015, Texas Instruments Incorporated
Product Folder Links: LM4050-N LM4050-N-Q1
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6.8 Electrical Characteristics: 5-V Option
All other limits TA = TJ = 25°C. The grades A, B and C designate initial Reverse Breakdown Voltage tolerances of ±0.1%,
±0.2% and 0.5% respectively.
PARAMETER
Reverse Breakdown Voltage
IR = 100 μA
IR = 100 μA
VR
Reverse Breakdown Voltage
Tolerance (3)
MIN (1)
TEST CONDITIONS
Industrial Temp. Range
TA = TJ = TMIN to TMAX
Extended Temp. Range
TA = TJ = TMIN to TMAX
TYP (2)
5
±5
LM4050BIM3. LM4050BEM3
±10
LM4050CIM3, LM4050CEM3
±25
LM4050AIM3, LM4050AEM3
±22
LM4050BIM3, LM4050BEM3
±27
LM4050CIM3, LM4050CEM3
±42
LM4050AIM3, LM4050AEM3
±30
LM4050BIM3, LM4050BEM3
±35
IRMIN
Average Reverse Breakdown
Voltage Temperature Coefficient (3)
ΔVR/ΔT
TA = TJ = 25°C
ΔVR/ΔIR
80
Extended Temp. Range
TA = TJ = TMIN to TMAX
90
IR = 10 mA
±30
IR = 1 mA
±20
IR = 100 μA, TA = TJ = 25°C
±20
IRMIN ≤ IR ≤ 1 mA, TA = TJ = 25°C
0.2
IRMIN ≤ IR ≤ 1 mA
TA = TJ = TMIN to TMAX
2
IR = 100 μA
10 Hz ≤ f ≤ 10 kHz
ΔVR
Reverse Breakdown Voltage Long
Term Stability
VHYST
Thermal Hysteresis (5)
(1)
(2)
(3)
(4)
(5)
8
1
8
mV
12
IR = 1 mA, f = 120 Hz
Wideband Noise
ppm/°C
1.4
0.5
IAC = 0.1 IR
eN
μA
±50
1 mA ≤ IR ≤ 15 mA, TA = TJ = 25°C
Reverse Dynamic Impedance
74
Industrial Temp. Range
TA = TJ = TMIN to TMAX
1 mA ≤ IR ≤ 15 mA
TA = TJ = TMIN to TMAX
ZR
mV
±50
56
IR = 100 μA
TA = TJ = TMIN to TMAX
Reverse Breakdown Voltage
Change with Operating Current
Change (4)
UNIT
V
LM4050AIM3, LM4050AEM3
LM4050CIM3, LM4050CEM3
Minimum Operating Current
MAX (1)
Ω
93
μVrms
t = 1000 hrs
T = 25°C ±0.1°C
IR = 100 μA
120
ppm
ΔT = –40°C to 125°C
1.4
mV
Limits are 100% production tested at 25°C. Limits over temperature are guaranteed through correlation using Statistical Quality Control
(SQC) methods. The limits are used to calculate National's AOQL.
Typicals are at TJ = 25°C and represent most likely parametric norm.
The overtemperature limit for Reverse Breakdown Voltage Tolerance is defined as the room temperature Reverse Breakdown Voltage
Tolerance ±[(ΔV R/ΔT)(maxΔT)(VR)]. Where, ΔVR/ΔT is the VR temperature coefficient, maxΔT is the maximum difference in temperature
from the reference point of 25°C to T MIN or TMAX, and VR is the reverse breakdown voltage. The total overtemperature tolerance for the
different grades in the industrial temperature range where maxΔT = 65°C is shown below:
A-grade: ±0.425% = ±0.1% ±50 ppm/°C ×
65°C
B-grade: ±0.525% = ±0.2% ±50 ppm/°C × 65°C
C-grade: ±0.825% = ±0.5% ±50 ppm/°C × 65°C. Therefore, as an
example, the A-grade LM4050-N-2.5 has an overtemperature Reverse Breakdown Voltage tolerance of ±2.5V × 0.425% = ±11 mV.
Load regulation is measured on pulse basis from no load to the specified load current. Output changes due to die temperature change
must be taken into account separately.
Thermal hysteresis is defined as the difference in voltage measured at 25°C after cycling to temperature –40°C and the 25°C
measurement after cycling to temperature 125°C.
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6.9 Electrical Characteristics: 8.2-V Option
All other limits TA = TJ = 25°C. The grades A, B and C designate initial Reverse Breakdown Voltage tolerances of ±0.1% and
±0.2% and 0.5% respectively.
PARAMETER
TEST CONDITIONS
IR = 150 μA
Reverse Breakdown Voltage
IR = 150 μA
VR
Reverse Breakdown Voltage
Tolerance (3)
Industrial Temp. Range
TA = TJ = TMIN to TMAX
Extended Temp. Range
TA = TJ = TMIN to TMAX
MIN (1)
TYP (2)
ΔVR/ΔT
Average Reverse Breakdown
Voltage Temperature Coefficient
(3)
±8.2
LM4050BIM3, LM4050BEM3
±16
LM4050CIM3, LM4050CEM3
±41
LM4050AIM3, LM4050AEM3
±35
LM4050BIM3, LM4050BEM3
±43
LM4050CIM3, LM4050CEM3
±68
LM4050AIM3, LM4050AEM3
±49
LM4050BIM3, LM4050BEM3
±57
ΔVR/ΔIR
95
Extended Temp. Range
TA = TJ = TMIN to TMAX
100
IR = 10 mA
±40
IR = 1 mA
±20
IR = 150 μA, TA = TJ = 25°C
±20
0.6
IRMIN ≤ IR ≤ 1 mA
TA = TJ = TMIN to TMAX
1 mA ≤ IR ≤ 15 mA, TA = TJ = 25°C
eN
ΔVR
VHYST
(1)
(2)
(3)
(4)
(5)
μA
ppm/°C
±50
1.3
2.5
7
1 mA ≤ IR ≤ 15 mA
TA = TJ = TMIN to TMAX
ZR
91
Industrial Temp. Range
TA = TJ = TMIN to TMAX
IRMIN ≤ IR ≤ 1 mA, TA = TJ = 25°C
mV
±82
74
IR = 150 μA
TA = TJ = TMIN to TMAX
Reverse Breakdown Voltage
Change with Operating Current
Change (4)
V
LM4050AIM3, LM4050AEM3
TA = TJ = 25°C
Minimum Operating Current
UNIT
8.192
LM4050CIM3, LM4050CEM3
IRMIN
MAX (1)
mV
10
18
Reverse Dynamic Impedance
IR = 1 mA, f = 120 Hz,
IAC = 0.1 IR
0.6
Ω
Wideband Noise
IR = 150 μA
10 Hz ≤ f ≤ 10 kHz
150
μVrms
Reverse Breakdown Voltage Long
Term Stability
t = 1000 hrs
T = 25°C ±0.1°C
IR = 150 μA
120
ppm
Thermal Hysteresis
ΔT = −40°C to 125°C
2.3
mV
(5)
Limits are 100% production tested at 25°C. Limits over temperature are guaranteed through correlation using Statistical Quality Control
(SQC) methods. The limits are used to calculate National's AOQL.
Typicals are at TJ = 25°C and represent most likely parametric norm.
The overtemperature limit for Reverse Breakdown Voltage Tolerance is defined as the room temperature Reverse Breakdown Voltage
Tolerance ±[(ΔV R/ΔT)(maxΔT)(VR)]. Where, ΔVR/ΔT is the VR temperature coefficient, maxΔT is the maximum difference in temperature
from the reference point of 25°C to T MIN or TMAX, and VR is the reverse breakdown voltage. The total overtemperature tolerance for the
different grades in the industrial temperature range where maxΔT = 65°C is shown below:
A-grade: ±0.425% = ±0.1% ±50 ppm/°C ×
65°C
B-grade: ±0.525% = ±0.2% ±50 ppm/°C × 65°C
C-grade: ±0.825% = ±0.5% ±50 ppm/°C × 65°C. Therefore, as an
example, the A-grade LM4050-N-2.5 has an overtemperature Reverse Breakdown Voltage tolerance of ±2.5V × 0.425% = ±11 mV.
Load regulation is measured on pulse basis from no load to the specified load current. Output changes due to die temperature change
must be taken into account separately.
Thermal hysteresis is defined as the difference in voltage measured at 25°C after cycling to temperature –40°C and the 25°C
measurement after cycling to temperature 125°C.
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6.10 Electrical Characteristics: 10-V Option
All other limits TA = TJ = 25°C. The grades A, B and C designate initial Reverse Breakdown Voltage tolerances of ±0.1% and
±0.2% and 0.5% respectively.
PARAMETER
IR = 150 μA
Reverse Breakdown Voltage
IR = 150 μA
VR
MIN (1)
TEST CONDITIONS
Reverse Breakdown Voltage
Tolerance (3)
Industrial Temp. Range
TA = TJ = TMIN to TMAX
Extended Temp. Range
TA = TJ = TMIN to TMAX
Minimum Operating Current
ΔVR/ΔT
Average Reverse Breakdown
Voltage Temperature Coefficient
(3)
±10
LM4050BIM3, LM4050BEM3
±20
LM4050CIM3, LM4050CEM3
±50
LM4050AIM3, LM4050AEM3
±43
LM4050BIM3, LM4050BEM3
±53
LM4050CIM3, LM4050CEM3
±83
LM4050AIM3, LM4050AEM3
±60
LM4050BIM3, LM4050BEM3
±70
LM4050CIM3, LM4050CEM3
±100
80
103
Extended Temp. Range
TA = TJ = TMIN to TMAX
110
μA
IR = 10 mA
±40
IR = 1 mA
±20
IR = 150 μA, TA = TJ = 25°C
±20
0.8
IRMIN ≤ IR ≤ 1 mA
TA = TJ = TMIN to TMAX
1 mA ≤ IR ≤ 15 mA, TA = TJ = 25°C
8
IR = 1 mA, f = 120 Hz,
IAC = 0.1 IR
0.7
eN
Wideband Noise
IR = 150 μA
10 Hz ≤ f ≤ 10 kHz
150
Reverse Breakdown Voltage Long
Term Stability
t = 1000 hrs
T = 25°C ±0.1°C
IR = 150 μA
120
ΔVR
VHYST
Thermal Hysteresis (5)
ΔT = −40°C to 125°C
2.8
(5)
10
12
mV
23
Reverse Dynamic Impedance
(4)
1.5
3.5
ZR
(2)
(3)
ppm/°C
±50
1 mA ≤ IR ≤ 15 mA
TA = TJ = TMIN to TMAX
(1)
mV (max)
100
Industrial Temp. Range
TA = TJ = TMIN to TMAX
IRMIN ≤ IR ≤ 1 mA, TA = TJ = 25°C
Reverse Breakdown Voltage
Change with Operating Current
Change (4)
UNIT
V
LM4050AIM3, LM4050AEM3
IR = 150 μA
TA = TJ = TMIN to TMAX
ΔVR/ΔIR
MAX (1)
10
TA = TJ = 25°C
IRMIN
TYP (2)
Ω
μVrms
ppm
mV
Limits are 100% production tested at 25°C. Limits over temperature are guaranteed through correlation using Statistical Quality Control
(SQC) methods. The limits are used to calculate National's AOQL.
Typicals are at TJ = 25°C and represent most likely parametric norm.
The overtemperature limit for Reverse Breakdown Voltage Tolerance is defined as the room temperature Reverse Breakdown Voltage
Tolerance ±[(ΔV R/ΔT)(maxΔT)(VR)]. Where, ΔVR/ΔT is the VR temperature coefficient, maxΔT is the maximum difference in temperature
from the reference point of 25°C to T MIN or TMAX, and VR is the reverse breakdown voltage. The total overtemperature tolerance for the
different grades in the industrial temperature range where maxΔT = 65°C is shown below:
A-grade: ±0.425% = ±0.1% ±50 ppm/°C ×
65°C
B-grade: ±0.525% = ±0.2% ±50 ppm/°C × 65°C
C-grade: ±0.825% = ±0.5% ±50 ppm/°C × 65°C. Therefore, as an
example, the A-grade LM4050-N-2.5 has an overtemperature Reverse Breakdown Voltage tolerance of ±2.5V × 0.425% = ±11 mV.
Load regulation is measured on pulse basis from no load to the specified load current. Output changes due to die temperature change
must be taken into account separately.
Thermal hysteresis is defined as the difference in voltage measured at 25°C after cycling to temperature –40°C and the 25°C
measurement after cycling to temperature 125°C.
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6.11 Typical Characteristics
Figure 1. Output Impedance vs Frequency
Figure 2. Output Impedance vs Frequency
Figure 3. Reverse Characteristics and Minimum Operating
Current
Figure 4. Noise Voltage vs Frequency
Figure 5. Thermal Hysteresis
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6.11.1 Start-Up Characteristics
Figure 6. Input Voltage Step Response LM4050-N-2.5
Figure 7. Input Voltage Step Response LM4050-N-5
Figure 8. Input Voltage Step Response LM4050-N-10
7 Parameter Measurement Information
Figure 9. Test Circuit
12
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8 Detailed Description
8.1 Overview
The LM4050-N device is a precision micropower shunt voltage reference. The part comes in 6 different fixedoutput voltage options for space-constrained applications, removing the need for feedback resistors. The voltage
tolerance accuracies are ±0.1%, ±0.2%, and ±0.5% for Versions A, B, and C, respectively. The LM4050-N comes
in two application versions, Industrial and Extended temperature range, which are operational from –40°C to
85°C and –40°C to 125°C, respectively.
8.2 Functional Block Diagram
8.3 Feature Description
The LM4050-N behaves as a high-precision Zener diode. The voltage is regulated between its cathode and
anode which is dependent on the current being supplied to the cathode. This current is needed for the LM4050-N
to regulate within the specified limits. Refer to the minimum and maximum operating requirements for the specific
voltage option used. The LM4050-N is internally compensated to be stable without the use of an output
capacitor. However, if desired, a bypass capacitor may be used.
8.4 Device Functional Modes
The LM4050-N can only operate in closed loop due to the fact that the feedback resistors are internal to the
device. Additionally, the output voltage cannot be adjusted for the same reason. The output voltage is regulated
in a closed loop, provided the Rs (see Functional Block Diagram) resistor is sized to deliver the current to the
cathode within the limits specified for the fixed-voltage version being used.
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The LM4050-N is a precision micropower curvature-corrected bandgap shunt voltage reference. For space
critical applications, the LM4050-N is available in the sub-miniature SOT-23 surface-mount package. The
LM4050-N has been designed for stable operation without the need of an external capacitor connected between
the + pin and the − pin. If, however, a bypass capacitor is used, the LM4050-N remains stable. Reducing design
effort is the availability of several fixed reverse breakdown voltages: 2.048 V, 2.5 V, 4.096 V, 5 V, 8.192 V, and
10 V. The minimum operating current increases from 60 μA for the LM4050-N-2.0 to 100 μA for the LM4050-N10.0. All versions have a maximum operating current of 15 mA.
LM4050-Ns in the SOT-23 packages have a parasitic Schottky diode between pin 2 (−) and pin 3 (Die attach
interface contact). Therefore, pin 3 of the SOT-23 package must be left floating or connected to pin 2.
The 4.096-V version allows single 5-V 12-bit ADCs or DACs to operate with an LSB equal to 1 mV. For 12-bit
ADCs or DACs that operate on supplies of 10 V or greater, the 8.192-V version gives 2 mV per LSB.
The typical thermal hysteresis specification is defined as the change in 25°C voltage measured after thermal
cycling. The device is thermal cycled to temperature –40°C and then measured at 25°C. Next the device is
thermal cycled to temperature 125°C and again measured at 25°C. The resulting VOUT delta shift between the
25°C measurements is thermal hysteresis. Thermal hysteresis is common in precision references and is induced
by thermal-mechanical package stress. Changes in environmental storage temperature, operating temperature
and board mounting temperature are all factors that can contribute to thermal hysteresis.
In a conventional shunt regulator application (Figure 10) , an external series resistor (RS) is connected between
the supply voltage and the LM4050-N. RS determines the current that flows through the load (IL) and the
LM4050-N (IQ). Since load current and supply voltage may vary, RS should be small enough to supply at least
the maximum guaranteed IRMIN (spec. table) to the LM4050-N even when the supply voltage is at its minimum
and the load current is at its maximum value. When the supply voltage is at its maximum and IL is at its
minimum, RS should be large enough so that the current flowing through the LM4050-N is less than 15 mA.
RS is determined by the supply voltage, (VS), the load and operating current, (IL and IQ), and the LM4050-N's
reverse breakdown voltage, VR.
V - VR
RS = S
IL + IQ
(1)
14
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9.2 Typical Applications
9.2.1 Shunt Regulator
IQ+IL
IL
Vout
Vs
Rs
Cathode
IQ
Cout
Anode
Figure 10. Shunt Regulator Schematic
9.2.1.1 Design Requirements
For this design example, use the parameters listed in Table 1 as the input parameters.
Table 1. Design Parameters
DESIGN PARAMETER
VALUE
Output Voltage
2 V, 2.5 V, 4.1 V, 5 V, 8.2 V, 10 V
Minimum Cathode Current
41 µA, 41 µA, 52 µA, 56 µA, 74 µA, 80 µA (Typical) (Respective to Above field)
9.2.1.2 Detailed Design Procedure
RS sets the cathode current of the shunt reference. Ensure that this current is greater than the minimum cathode
current to ensure regulation and less that the maximum reverse current to prevent overheating of the shunt
reference. A suggested good starting value for most designs is from approximately 0.5 mA to 1 mA.
V - Vout
IRMIN < s
< 0.015A
Rs
(2)
9.2.1.3 Application Curve
Figure 11. Reverse Characteristics and Minimum Operating Current
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9.2.2 Precision Reference for an Analog-to-Digital Converter
**Ceramic monolithic
*Tantalum
Figure 12. LM4050-N-4.1'S Nominal 4.096 Breakdown Voltage Gives ADC12451 1 MV/LSB
9.2.2.1 Design Requirements
For this design example, use the parameters listed in Table 2 as the input parameters.
Table 2. Design Parameters
DESIGN PARAMETER
VALUE
Output Voltage
4.1 V
9.2.2.2 Detailed Design Procedure
Set IQ to approximately 1 mA.
V - Vout
Rs = s
IQ
where
•
16
Rs = 900 Ω, nearest preferred Value = 909 Ω
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9.2.3 VOUT Bounded Amplifier
Bounded amplifier reduces saturation-induced delays and can prevent succeeding stage damage. Nominal clamping
voltage is ±11.5 V (LM4050-N's reverse breakdown voltage +2 diode VF).
Figure 13. Bounded Amplifier
9.2.3.1 Design Requirements
The only design requirement is VOUT bounded to ±11.5 V.
9.2.3.2 Detailed Design Procedure
Vbound = 2 ´ Vwd + Vout
(4)
Vf wd = 0.7 V
(5)
Vbound = (2 ´ 0.7 V) + 10 V
(6)
Set IQ to approximately 0.6 mA.
Vs + - Vs - Vout
Rs =
IQ
(7)
30 V - 10 V
Rs =
0.0006A
where
•
RS (total) = 33 kΩ (select 2 × 15 kΩ)
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(8)
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9.2.4 VIN Bounded Amplifier
The bounding voltage is ±4 V with the LM4050-N-2.5 (LM4050-N's reverse breakdown voltage + 3 diode VF).
Figure 14. Protecting Op Amp Input
9.2.4.1 Design Requirements
The only design requirement is VIN bounded to ±4.6 V.
9.2.4.2 Detailed Design Procedure
Vbound = 3 ´ Vwd + Vout
(9)
Vf wd = 0.7 V
(10)
Vbound = (3 ´ 0.7 V) + 2.5 V
(11)
Set IQ to approximately 0.6 mA.
Vs + - Vs - Vout
Rs =
IQ
(12)
where
•
18
RS (total) = 12.5 kΩ (select 2 × 5 kΩ)
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9.2.5 ±4.096 Precision Reference
Figure 15. Precision ±4.096v Reference
9.2.5.1 Design Requirements
The only design requirement is a positive and negative reference generated from a positive reference, ±4.096 V.
9.2.5.2 Detailed Design Procedure
Follow the design procedure set in Precision Reference for an Analog-to-Digital Converter.
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9.2.6 ±1-mA Precision Current Sources
Iout =
Vout
R2
Figure 16. Precision 1-µA to 1-mA Current Source (±)
9.2.6.1 Design Requirements
The only design requirement is a dual ±1-mA current source.
9.2.6.2 Detailed Design Procedure
Set worse-case cathode current to 0.6 mA.
Voutopampmax = 12 V
R1=
(14)
VoutOpampmax - Vout
IQ
(15)
12 V - 2.5 V
R1 =
0.0006A
(16)
4
R1 = 1.583 ´ 10 W
V
Iout = out
R2
20
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(17)
(18)
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10 Power Supply Recommendations
Noise on the power supply input to RS can affect output noise performance. Noise performance can be reduced
by using an optional bypass capacitor at the input side of RS and Ground. TI recommends a 0.1-µF ceramic
capacitor or higher.
11 Layout
11.1 Layout Guidelines
Place RS as close to the cathode as possible. If an input and output capacitor is used, place this as close to the
reference as possible.
11.2 Layout Example
Set Rs Close to Ref
Rs
Vout
Vs
Cathode
Cin
Cout
Anode
Set Cin Close to Ref
Set Cout Close to Ref
Figure 17. Layout Recommendation
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12 Device and Documentation Support
12.1 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 3. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
LM4050-N
Click here
Click here
Click here
Click here
Click here
LM4050-N-Q1
Click here
Click here
Click here
Click here
Click here
12.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.3 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
22
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PACKAGE OPTION ADDENDUM
www.ti.com
4-Aug-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
LM4050AEM3-10/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RGA
Samples
LM4050AEM3-2.0/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RNA
Samples
LM4050AEM3-2.5
NRND
SOT-23
DBZ
3
1000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
-40 to 125
RCA
LM4050AEM3-2.5/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RCA
LM4050AEM3-5.0
NRND
SOT-23
DBZ
3
1000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
-40 to 125
REA
LM4050AEM3-5.0/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
REA
Samples
LM4050AEM3-8.2/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RFA
Samples
LM4050AEM3X-10/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RGA
Samples
LM4050AEM3X-2.5/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RCA
Samples
LM4050AEM3X-5.0/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
REA
Samples
LM4050AIM3-10/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RGA
Samples
LM4050AIM3-2.5
NRND
SOT-23
DBZ
3
1000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
-40 to 85
RCA
LM4050AIM3-2.5/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RCA
LM4050AIM3-4.1
NRND
SOT-23
DBZ
3
1000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
-40 to 85
RDA
LM4050AIM3-4.1/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RDA
LM4050AIM3-5.0
NRND
SOT-23
DBZ
3
1000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
-40 to 85
REA
LM4050AIM3-5.0/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
REA
Samples
LM4050AIM3X-2.5/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RCA
Samples
LM4050AIM3X-4.1/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RDA
Samples
Addendum-Page 1
Samples
Samples
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
4-Aug-2022
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
LM4050AIM3X-5.0/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
REA
Samples
LM4050BEM3-10/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RGB
Samples
LM4050BEM3-2.5
NRND
SOT-23
DBZ
3
1000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
-40 to 125
RCB
LM4050BEM3-2.5/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RCB
Samples
LM4050BEM3-4.1/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RDB
Samples
LM4050BEM3-5.0
NRND
SOT-23
DBZ
3
1000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
-40 to 125
REB
LM4050BEM3-5.0/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
REB
Samples
LM4050BEM3-8.2/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RFB
Samples
LM4050BEM3X-10/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RGB
Samples
LM4050BEM3X-2.5/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RCB
Samples
LM4050BEM3X-5.0/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
REB
Samples
LM4050BIM3-10/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RGB
Samples
LM4050BIM3-2.5
NRND
SOT-23
DBZ
3
1000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
-40 to 85
RCB
LM4050BIM3-2.5/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RCB
Samples
LM4050BIM3-4.1/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RDB
Samples
LM4050BIM3-5.0
NRND
SOT-23
DBZ
3
1000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
-40 to 85
REB
LM4050BIM3-5.0/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
REB
Samples
LM4050BIM3X-2.0/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RNB
Samples
LM4050BIM3X-2.5/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RCB
Samples
LM4050BIM3X-4.1/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RDB
Samples
Addendum-Page 2
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
4-Aug-2022
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
LM4050BIM3X-5.0/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
LM4050CEM3-10/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
LM4050CEM3-2.5
NRND
SOT-23
DBZ
3
1000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
-40 to 125
RCC
LM4050CEM3-2.5/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RCC
LM4050CEM3-5.0
NRND
SOT-23
DBZ
3
1000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
REC
LM4050CEM3-5.0/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
REC
Samples
LM4050CEM3X-2.5/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
RCC
Samples
LM4050CEM3X-5.0/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
REC
Samples
LM4050CIM3-10/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RGC
Samples
LM4050CIM3-2.5/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RCC
Samples
LM4050CIM3-4.1/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RDC
Samples
LM4050CIM3-5.0
NRND
SOT-23
DBZ
3
1000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
-40 to 85
REC
LM4050CIM3-5.0/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
REC
Samples
LM4050CIM3X-2.0/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RNC
Samples
LM4050CIM3X-2.5/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RCC
Samples
LM4050CIM3X-4.1/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RDC
Samples
LM4050CIM3X-5.0/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
REC
Samples
LM4050QAEM3-10/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RYA
Samples
LM4050QAEM3-2.0/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RSA
Samples
LM4050QAEM3-2.5/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RTA
Samples
Addendum-Page 3
-40 to 85
-40 to 125
REB
Samples
RGC
Samples
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
4-Aug-2022
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
LM4050QAEM3-4.1/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RUA
Samples
LM4050QAEM3-5.0/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RVA
Samples
LM4050QAEM3-8.2/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RXA
Samples
LM4050QAEM3X10/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RYA
Samples
LM4050QAEM3X2.0/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RSA
Samples
LM4050QAEM3X2.5/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RTA
Samples
LM4050QAEM3X4.1/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RUA
Samples
LM4050QAEM3X5.0/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RVA
Samples
LM4050QAEM3X8.2/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RXA
Samples
LM4050QAIM3-10/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RYA
Samples
LM4050QAIM3-2.0/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RSA
Samples
LM4050QAIM3-2.5/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RTA
Samples
LM4050QAIM3-4.1/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RUA
Samples
LM4050QAIM3-8.2/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RXA
Samples
LM4050QAIM3X4.1/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RUA
Samples
LM4050QBEM3-10/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RYB
Samples
LM4050QBEM3-2.0/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RSB
Samples
LM4050QBEM3-2.5/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RTB
Samples
LM4050QBEM3-4.1/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RUB
Samples
LM4050QBEM3-5.0/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RVB
Samples
LM4050QBEM3-8.2/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RXB
Samples
Addendum-Page 4
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
4-Aug-2022
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
LM4050QBEM3X10/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RYB
Samples
LM4050QBEM3X2.0/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RSB
Samples
LM4050QBEM3X2.5/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RTB
Samples
LM4050QBEM3X4.1/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RUB
Samples
LM4050QBEM3X5.0/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RVB
Samples
LM4050QBEM3X8.2/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RXB
Samples
LM4050QBIM3-10/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RYB
Samples
LM4050QBIM3-2.0/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RSB
Samples
LM4050QBIM3-2.5/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RTB
Samples
LM4050QBIM3-4.1/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RUB
Samples
LM4050QBIM3-5.0/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RVB
Samples
LM4050QBIM3-8.2/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RXB
Samples
LM4050QCEM3-10/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RYC
Samples
LM4050QCEM3-2.0/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RSC
Samples
LM4050QCEM3-2.5/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RTC
Samples
LM4050QCEM3-4.1/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RUC
Samples
LM4050QCEM3-5.0/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RVC
Samples
LM4050QCEM3-8.2/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RXC
Samples
LM4050QCEM3X10/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RYC
Samples
LM4050QCEM3X2.0/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RSC
Samples
LM4050QCEM3X2.5/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RTC
Samples
Addendum-Page 5
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
4-Aug-2022
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
LM4050QCEM3X4.1/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RUC
Samples
LM4050QCEM3X5.0/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RVC
Samples
LM4050QCEM3X8.2/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
RXC
Samples
LM4050QCIM3-2.0/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RSC
Samples
LM4050QCIM3-4.1/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RUC
Samples
LM4050QCIM3-5.0/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
RVC
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of