LM4562MAX/NOPB

LM4562 www.ti.com SNAS326K – AUGUST 2006 – REVISED DECEMBER 2013 LM4562 Dual High-Performance, High-Fidelity Audio Operational Amplifier Check for Samples: LM4562 FEATURES DESCRIPTION • • • • • The LM4562 is part of the ultra-low distortion, lownoise, high-slew-rate operational amplifier series optimized and fully specified for high-performance, high-fidelity applications. The LM4562 audio operational amplifiers deliver superior audio signal amplification for outstanding audio performance. The LM4562 combines extremely low voltage noise density (2.7nV/√Hz) with vanishingly low THD+N (0.00003%) to easily satisfy the most demanding audio applications. To ensure that the most challenging loads are driven without compromise, the LM4562 has a high slew rate of ±20V/μs and an output current capability of ±26mA. Further, dynamic range is maximized by an output stage that drives 2kΩ loads to within 1V of either power supply voltage and to within 1.4V when driving 600Ω loads. 1 2 Easily Drives 600Ω Loads Optimized for Superior Audio Signal Fidelity Output Short Circuit Protection PSRR and CMRR Exceed 120dB (Typ) SOIC, PDIP, and TO-99 Packages APPLICATIONS • • • • • Ultra High-Quality Audio Amplification High-Fidelity Preamplifiers High-Performance Professional Audio High-Fidelity Active Equalization and Crossover Networks High-Performance Line Drivers and Receivers KEY SPECIFICATIONS • • • • • • • • • Power Supply Voltage Range: ±2.5V to ± 17V THD+N (AV = 1, VOUT = 3VRMS, fIN = 1kHz) – RL = 2kΩ: 0.00003% (typ) – RL = 600Ω: 0.00003% (typ) Input Noise Density: 2.7nV/√Hz (typ) Slew Rate: ±20V/μs (typ) Gain Bandwidth Product: 55MHz (typ) Open Loop Gain (RL = 600Ω): 140dB (typ) Input Bias Current: 10nA (typ) Input Offset Voltage: 0.1mV (typ) DC Gain Linearity Error: 0.000009% The LM4562's outstanding CMRR (120dB), PSRR (120dB), and VOS (0.1mV) give the amplifier excellent operational amplifier DC performance. The LM4562 has a wide supply range of ±2.5V to ±17V. Over this supply range the LM4562’s input circuitry maintains excellent common-mode and power supply rejection, as well as maintaining its low input bias current. The LM4562 is unity gain stable. This Audio Operational Amplifier achieves outstanding AC performance while driving complex loads with values as high as 100pF. The LM4562 is available in an 8-lead narrow body SOIC, an 8-lead PDIP, and an 8-lead TO-99. TYPICAL APPLICATION 150: 3320: 150: 3320: 26.1 k: + 909: - - LM4562 + INPUT LM4562 22 nF//4.7 nF//500 pF 10 pF 47 k: + 3.83 k: + 100: OUTPUT 47 nF//33 nF A. 1% metal film resistors, 5% polypropylene capacitors Passively Equalized RIAA Phono Preamplifier 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2006–2013, Texas Instruments Incorporated LM4562 SNAS326K – AUGUST 2006 – REVISED DECEMBER 2013 www.ti.com CONNECTION DIAGRAMS + Dual-In-Line Package V 8 1 8 OUTPUT A 2 OUTPUT A INVERTING INPUT A 7 INVERTING INPUT A 1 OUTPUT B 7 2 6 INVERTING INPUT B OUTPUT B A NON-INVERTING INPUT A 3 - 4 V + V NON-INVERTING INPUT A B + + - 3 5 NON-INVERTING INPUT B 4 6 INVERTING INPUT B V 5 - NON-INVERTING INPUT B Figure 1. 8-Lead SOIC (D Package) 8-Lead PDIP (P Package) Figure 2. 8-Lead TO-99 (LMC Package) These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ABSOLUTE MAXIMUM RATINGS (1) (2) (3) Power Supply Voltage (VS = V+ - V-) 36V −65°C to 150°C Storage Temperature Input Voltage (V-) - 0.7V to (V+) + 0.7V Output Short Circuit (4) Continuous Power Dissipation Internally Limited ESD Susceptibility (5) ESD Susceptibility (6) 2000V Pins 1, 4, 7 and 8 Pins 2, 3, 5 and 6 Junction Temperature Thermal Resistance 200V 100V 150°C θJA (D) 145°C/W θJA (P) 102°C/W θJA (LMC) 150°C/W θJC (LMC) 35°C/W Temperature Range (TMIN ≤ TA ≤ TMAX) –40°C ≤ TA ≤ 85°C Supply Voltage Range ±2.5V ≤ VS ≤ ± 17V (1) (2) (3) (4) (5) (6) 2 Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications. Amplifier output connected to GND, any number of amplifiers within a package. Human body model, 100pF discharged through a 1.5kΩ resistor. Machine Model ESD test is covered by specification EIAJ IC-121-1981. A 200pF cap is charged to the specified voltage and then discharged directly into the IC with no external series resistor (resistance of discharge path must be under 50Ω). Submit Documentation Feedback Copyright © 2006–2013, Texas Instruments Incorporated Product Folder Links: LM4562 LM4562 www.ti.com SNAS326K – AUGUST 2006 – REVISED DECEMBER 2013 ELECTRICAL CHARACTERISTICS FOR THE LM4562 (1) (2) The specifications apply for VS = ±15V, RL = 2kΩ, fIN = 1kHz, TA = 25°C, unless otherwise specified. Symbol THD+N Parameter Total Harmonic Distortion + Noise Conditions LM4562 Typical (3) AV = 1, VOUT = 3Vrms RL = 2kΩ RL = 600Ω 0.00003 0.00003 AV = 1, VOUT = 3VRMS Two-tone, 60Hz & 7kHz 4:1 0.00005 Limit (4) Units (Limits) % (max) 0.00009 IMD Intermodulation Distortion GBWP Gain Bandwidth Product 55 45 MHz (min) SR Slew Rate ±20 ±15 V/μs (min) FPBW Full Power Bandwidth VOUT = 1VP-P, –3dB referenced to output magnitude at f = 1kHz 10 MHz ts Settling time AV = –1, 10V step, CL = 100pF 0.1% error range 1.2 μs Equivalent Input Noise Voltage fBW = 20Hz to 20kHz 0.34 0.65 μVRMS (max) Equivalent Input Noise Density f = 1kHz f = 10Hz 2.7 6.4 4.7 nV/√Hz (max) in Current Noise Density f = 1kHz f = 10Hz 1.6 3.1 VOS Offset Voltage ΔVOS/ΔTemp Average Input Offset Voltage Drift vs Temperature –40°C ≤ TA ≤ 85°C 0.2 PSRR Average Input Offset Voltage Shift vs Power Supply Voltage ΔVS = 20V (5) 120 ISOCH-CH Channel-to-Channel Isolation fIN = 1kHz fIN = 20kHz 118 112 IB Input Bias Current VCM = 0V 10 ΔIOS/ΔTemp Input Bias Current Drift vs Temperature –40°C ≤ TA ≤ 85°C 0.1 IOS Input Offset Current VCM = 0V en VIN-CM CMRR Common-Mode Rejection Common Mode Input Impedance AVOL VOUTMAX IOUT Open Loop Voltage Gain Maximum Output Voltage Swing Output Current IOUT-CC Instantaneous Short Circuit Current ROUT Output Impedance (3) (4) (5) pA/√Hz ±0.7 mV (max) μV/°C 110 dB (min) dB 72 nA (max) nA/°C 11 65 nA (max) +14.1 –13.9 (V+) – 2.0 (V-) + 2.0 V (min) –10V