LM4755TS/NOPB

LM4755 www.ti.com SNAS010E – FEBRUARY 1999 – REVISED APRIL 2013 LM4755 Stereo 11W Audio Power Amplifier with Mute Check for Samples: LM4755 FEATURES DESCRIPTION • • • • • • The LM4755 is a stereo audio amplifier capable of delivering 11W per channel of continuous average output power to a 4Ω load or 7W per channel into 8Ω using a single 24V supply at 10% THD+N. The internal mute circuit and pre-set gain resistors provide for a very economical design solution. 1 2 • • Drives 4Ω and 8Ω Loads Integrated Mute Function Internal Gain Resistors Minimal External Components Needed Single Supply Operation Internal Current Limiting and Thermal Protection Compact 9-lead TO-220 Package Wide Supply Range 9V - 40V Output power specifications at both 20V and 24V supplies and low external component count offer high value to consumer electronic manufacturers for stereo TV and compact stereo applications. The LM4755 is specifically designed for single supply operation. APPLICATIONS • • • Stereos TVs Compact Stereos Mini Component Stereos KEY SPECIFICATIONS • • • • • Output Power at 10% THD with 1kHz into 4Ω at VCC = 24V 11 W (typ) Output Power at 10% THD with 1kHz into 8Ω at VCC = 24V 7 W (typ) Closed Loop Gain 34 dB (typ) PO at 10% THD+N @ 1kHz into 4Ω SingleEnded DDPAK Package at VCC=12V 2.5 W (typ) PO at 10% THD+N @ 1kHz into 8Ω Bridged DDPAK Package at VCC=12V 5 W (typ) 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 1999–2013, Texas Instruments Incorporated LM4755 SNAS010E – FEBRUARY 1999 – REVISED APRIL 2013 www.ti.com TYPICAL APPLICATION Figure 1. Typical Audio Amplifier Application Circuit Connection Diagram 9 Pin TO-220 Plastic Package (Top View) See Package Number NEC 9 Pin DDPAK Plastic Package (Top View) See Package Number KTW 2 Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM4755 LM4755 www.ti.com SNAS010E – FEBRUARY 1999 – REVISED APRIL 2013 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ABSOLUTE MAXIMUM RATINGS (1) (2) (3) (4) Supply Voltage 40V Input Voltage ±0.7V Input Voltage at Output Pins (5) GND -0.4V Output Current Internally Limited Power Dissipation (6) 62.5W ESD Susceptibility (7) 2 kV Junction Temperature 150°C Soldering Information NEC Package (10 seconds) 250°C −40°C to 150°C Storage Temperature (1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not ensured for parameters where no limit is given, however, the typical value is a good indication of device performance. If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications. The TO-263 Package is not recommended for VS > 16V due to impractical heatsinking limitations. All voltages are measured with respect to the GND pin (5), unless otherwse specified. The outputs of the LM4755 cannot be driven externally in any mode with a voltage lower than -0.4V below GND or permanent damage to the LM4755 will result. For operating at case temperatures above 25°C, the device must be derated based on a 150°C maximum junction temperature and a thermal resistance of θJC = 2°C/W (junction to case). Refer to the section DETERMINING MAXIMUM POWER DISSIPATION in the APPLICATION INFORMATION section for more information. Human body model, 100 pF discharged through a 1.5 kΩ resistor. (2) (3) (4) (5) (6) (7) OPERATING RATINGS Temperature Range TMIN ≤ TA ≤ TMAX −40°C ≤ TA ≤ +85°C Supply Voltage 9V to 32V θJC 2°C/W θJA 76°C/W ELECTRICAL CHARACTERISTICS The following specifications apply to each channel with VCC = 24V, TA = 25°C unless otherwise specified. Symbol ITOTAL PO Parameter Total Quiescent Power Supply Current Output Power (Continuous Average per Channel) Conditions Mute Off LM4755 Typical (1) Limit Units (Limits) 10 15 mA(max) 7 mA(min) Mute On 7 mA f = 1 kHz, THD+N = 10%, RL = 8Ω 7 W f = 1 kHz, THD+N = 10%, RL = 4Ω 11 VS = 20V, RL = 8Ω 4 W VS = 20V, RL = 4Ω 7 W f = 1 kHz, THD+N = 10%, RL = 4Ω VS = 12V, DDPAK Pkg. 2.5 W 10 W(min) THD Total Harmonic Distortion f = 1 kHz, PO = 1 W/ch, RL = 8Ω 0.08 % VOSW Output Swing PO = 10W, RL = 8Ω 15 V PO = 10W, RL = 4Ω 14 V XTALK Channel Separation See Apps. Circuit (Figure 1) 55 dB f = 1 kHz, VO = 4 Vrms (1) Typicals are measured at 25°C and represent the parametric norm. Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM4755 3 LM4755 SNAS010E – FEBRUARY 1999 – REVISED APRIL 2013 www.ti.com ELECTRICAL CHARACTERISTICS (continued) The following specifications apply to each channel with VCC = 24V, TA = 25°C unless otherwise specified. Symbol PSRR Parameter Power Supply Rejection Ratio Conditions See Apps. Circuit (Figure 1) LM4755 Typical (1) Limit 50 Units (Limits) dB f = 120 Hz, VO = 1 mVrms VODV Differential DC Output Offset Voltage VIN = 0V 0.09 0.4 V(max) SR Slew Rate 2 V/µs RIN Input Impedance 83 kΩ PBW Power Bandwidth 3 dB BW at PO = 2.5W, RL = 8Ω 65 AVCL Closed Loop Gain (Internally Set) RL = 8Ω 34 εIN Noise IHF-A Weighting Filter, RL = 8Ω Output Referred 0.2 IO Output Short Circuit Limit VIN = 0.5V, RL = 2Ω Mute Pin VIL Mute Low Input Voltage Not in Mute Mode VIH Mute High Input Voltage In Mute Mode 2.0 AM Mute Attenuation VMUTE = 5.0V 80 kHz 33 dB(min) 35 dB(max) mVrms 2 A(min) 0.8 V(max) 2.5 V(min) dB EQUIVALENT SCHEMATIC Figure 2. 4 Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM4755 LM4755 www.ti.com SNAS010E – FEBRUARY 1999 – REVISED APRIL 2013 TEST CIRCUIT Figure 3. Test Circuit Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM4755 5 LM4755 SNAS010E – FEBRUARY 1999 – REVISED APRIL 2013 www.ti.com SYSTEM APPLICATION CIRCUIT Figure 4. Circuit for External Components Description EXTERNAL COMPONENTS DESCRIPTION Components 6 Function Description 1, 2 CS Provides power supply filtering and bypassing. 3, 4 RSN Works with CSN to stabilize the output stage from high frequency oscillations. 5, 6 CSN Works with RSN to stabilize the output stage from high frequency oscillations. 7 Cb Provides filtering for the internally generated half-supply bias generator. 8, 9 Ci Input AC coupling capacitor which blocks DC voltage at the amplifier's input terminals. Also creates a high pass filter with fc=1/(2 • π • Rin • Cin). 10, 11 Co Output AC coupling capacitor which blocks DC voltage at the amplifier's output terminal. Creates a high pass filter with fc=1/(2 • π • Rout • Cout). 12, 13 Ri Voltage control - limits the voltage level allowed to the amplifier's input terminals. 14 Rm Works with Cm to provide mute function timing. 15 Cm Works with Rm to provide mute function timing. Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM4755 LM4755 www.ti.com SNAS010E – FEBRUARY 1999 – REVISED APRIL 2013 TYPICAL PERFORMANCE CHARACTERISTICS Typicals are measured at 25°C and represent the parametric norm. THD+N vs Output Power THD+N vs Output Power Figure 5. Figure 6. THD+N vs Output Power THD+N vs Output Power Figure 7. Figure 8. THD+N vs Output Power THD+N vs Output Power Figure 9. Figure 10. Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM4755 7 LM4755 SNAS010E – FEBRUARY 1999 – REVISED APRIL 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) Typicals are measured at 25°C and represent the parametric norm. 8 THD+N vs Output Power THD+N vs Output Power Figure 11. Figure 12. THD+N vs Output Power THD+N vs Output Power Figure 13. Figure 14. THD+N vs Output Power THD+N vs Output Power Figure 15. Figure 16. Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM4755 LM4755 www.ti.com SNAS010E – FEBRUARY 1999 – REVISED APRIL 2013 TYPICAL PERFORMANCE CHARACTERISTICS (continued) Typicals are measured at 25°C and represent the parametric norm. THD+N vs Output Power THD+N vs Output Power Figure 17. Figure 18. THD+N vs Output Power THD+N vs Output Power Figure 19. Figure 20. THD+N vs Output Power THD+N vs Output Power Figure 21. Figure 22. Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM4755 9 LM4755 SNAS010E – FEBRUARY 1999 – REVISED APRIL 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) Typicals are measured at 25°C and represent the parametric norm. 10 THD+N vs Output Power THD+N vs Output Power Figure 23. Figure 24. THD+N vs Output Power THD+N vs Output Power Figure 25. Figure 26. THD+N vs Output Power THD+N vs Output Power Figure 27. Figure 28. Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM4755 LM4755 www.ti.com SNAS010E – FEBRUARY 1999 – REVISED APRIL 2013 TYPICAL PERFORMANCE CHARACTERISTICS (continued) Typicals are measured at 25°C and represent the parametric norm. Output Power vs Supply Voltage Output Power vs Supply Voltage Figure 29. Figure 30. Frequency Response THD+N vs Frequency Figure 31. Figure 32. THD+N vs Frequency Frequency Response Figure 33. Figure 34. Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM4755 11 LM4755 SNAS010E – FEBRUARY 1999 – REVISED APRIL 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) Typicals are measured at 25°C and represent the parametric norm. 12 Channel Separation PSRR vs Frequency Figure 35. Figure 36. Supply Current vs Supply Voltage Power Derating Curve Figure 37. Figure 38. Power Dissipation vs Output Power Power Dissipation vs Output Power Figure 39. Figure 40. Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM4755 LM4755 www.ti.com SNAS010E – FEBRUARY 1999 – REVISED APRIL 2013 TYPICAL PERFORMANCE CHARACTERISTICS (continued) Typicals are measured at 25°C and represent the parametric norm. Power Dissipation vs Output Power Power Dissipation vs Output Power Figure 41. Figure 42. Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM4755 13 LM4755 SNAS010E – FEBRUARY 1999 – REVISED APRIL 2013 www.ti.com APPLICATION INFORMATION The LM4755 contains circuitry to pull down the bias line internally, effectively shutting down the input stage. An external R-C should be used to adjust the timing of the pull-down. If the bias line is pulled down too quickly, currents induced in the internal bias resistors will cause a momentary DC voltage to appear across the inputs of each amplifier's internal differential pair, resulting in an output DC shift towards Vsupply. An R-C timing circuit should be used to limit the pull-down time such that output “pops” and signal feedthroughs will be minimized. The pull-down timing is a function of a number of factors, including the internal mute circuitry, the voltage used to activate the mute, the bias capacitor, the half-supply voltage, and internal resistances used in the half-supply generator. Table 1 shows a list of recommended values for the external R-C. Table 1. RECOMMENDED VALUES FOR MUTE CIRCUIT VMUTE VCC Rm Cm 5V 12V 18 kΩ 10 µF 5V 15V 18 kΩ 10 µF 5V 20V 12 kΩ 10 µF 5V 24V 12 kΩ 10 µF 5V 28V 8.2 kΩ 10 µF 5V 30V 8.2 kΩ 10 µF CAPACITOR SELECTION AND FREQUENCY RESPONSE With the LM4755, as in all single supply amplifiers, AC coupling capacitors are used to isolate the DC voltage present at the inputs (pins 3, 7) and outputs (pins 1, 8). As mentioned earlier in the EXTERNAL COMPONENTS DESCRIPTION section these capacitors create high-pass filters with their corresponding input/output impedances. The Typical Application Circuit shown in Figure 1 shows input and output capacitors of 0.1 µF and 1,000 µF respectively. At the input, with an 83 kΩ typical input resistance, the result is a high pass 3 dB point occurring at 19 Hz. There is another high pass filter at 39.8 Hz created with the output load resistance of 4Ω. Careful selection of these components is necessary to ensure that the desired frequency response is obtained. The Frequency Response curves in the TYPICAL PERFORMANCE CHARACTERISTICS section show how different output coupling capacitors affect the low frequency roll-off. OPERATING IN BRIDGE-MODE Though designed for use as a single-ended amplifier, the LM4755 can be used to drive a load differentially (bridge-mode). Due to the low pin count of the package, only the non-inverting inputs are available. An inverted signal must be provided to one of the inputs. This can easily be done with the use of an inexpensive op-amp configured as a standard inverting amplifier. An LF353 is a good low-cost choice. Care must be taken, however, for a bridge-mode amplifier must theoretically dissipate four times the power of a single-ended type. The load seen by each amplifier is effectively half that of the actual load being used, thus an amplifier designed to drive a 4Ω load in single-ended mode should drive an 8Ω load when operating in bridge-mode. 14 Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM4755 LM4755 www.ti.com SNAS010E – FEBRUARY 1999 – REVISED APRIL 2013 Figure 43. Bridge-Mode Application Figure 44. THD+N vs POUT for Bridge-Mode Application Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM4755 15 LM4755 SNAS010E – FEBRUARY 1999 – REVISED APRIL 2013 www.ti.com PREVENTING OSCILLATIONS With the integration of the feedback and bias resistors on-chip, the LM4755 fits into a very compact package. However, due to the close proximity of the non-inverting input pins to the corresponding output pins, the inputs should be AC terminated at all times. If the inputs are left floating, the amplifier will have a positive feedback path through high impedance coupling, resulting in a high frequency oscillation. In most applications, this termination is typically provided by the previous stage's source impedance. If the application will require an external signal, the inputs should be terminated to ground with a resistance of 50 kΩ or less on the AC side of the input coupling capacitors. UNDERVOLTAGE SHUTDOWN If the power supply voltage drops below the minimum operating supply voltage, the internal under-voltage detection circuitry pulls down the half-supply bias line, shutting down the preamp section of the LM4755. Due to the wide operating supply range of the LM4755, the threshold is set to just under 9V. There may be certain applications where a higher threshold voltage is desired. One example is a design requiring a high operating supply voltage, with large supply and bias capacitors, and there is little or no other circuitry connected to the main power supply rail. In this circuit, when the power is disconnected, the supply and bias capacitors will discharge at a slower rate, possibly resulting in audible output distortion as the decaying voltage begins to clip the output signal. An external circuit may be used to sense for the desired threshold, and pull the bias line (pin 6) to ground to disable the input preamp. Figure 45 shows an example of such a circuit. When the voltage across the zener diode drops below its threshold, current flow into the base of Q1 is interrupted. Q2 then turns on, discharging the bias capacitor. This discharge rate is governed by several factors, including the bias capacitor value, the bias voltage, and the resistor at the emitter of Q2. An equation for approximating the value of the emitter discharge resistor, R, is given below: R = (0.7v) / (Cb • (VCC/2) / 0.1s) (1) Note that this is only a linearized approximation based on a discharge time of 0.1s. The circuit should be evaluated and adjusted for each application. As mentioned earlier in the Built-in Mute Circuit section, when using an external circuit to pull down the bias line, the rate of discharge will have an effect on the turn-off induced distortions. Please refer to the Table 1 section for more information. Figure 45. External Undervoltage Pull-Down THERMAL CONSIDERATIONS Heat Sinking Proper heatsinking is necessary to ensure that the amplifier will function correctly under all operating conditions. A heatsink that is too small will cause the die to heat excessively and will result in a degraded output signal as the thermal protection circuitry begins to operate. 16 Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM4755 LM4755 www.ti.com SNAS010E – FEBRUARY 1999 – REVISED APRIL 2013 The choice of a heatsink for a given application is dictated by several factors: the maximum power the IC needs to dissipate, the worst-case ambient temperature of the circuit, the junction-to-case thermal resistance, and the maximum junction temperature of the IC. The heat flow approximation equation used in determining the correct heatsink maximum thermal resistance is given below: TJ–TA = PDMAX • (θJC + θCS + θSA) where • • • • • • PDMAX = maximum power dissipation of the IC TJ(°C) = junction temperature of the IC TA(°C) = ambient temperature θJC(°C/W) = junction-to-case thermal resistance of the IC θCS(°C/W) = case-to-heatsink thermal resistance (typically 0.2 to 0.5 °C/W) θSA(°C/W) = thermal resistance of heatsink (2) When determining the proper heatsink, the above equation should be re-written as: θSA ≤ [(TJ–TA) / PDMAX] - θJC–θCS (3) DDPAK HEATSINKING Surface mount applications will be limited by the thermal dissipation properties of printed circuit board area. The DDPAK package is not recommended for surface mount applications with VS > 16V due to limited printed circuit board area. There are DDPAK package enhancements, such as clip-on heatsinks and heatsinks with adhesives, that can be used to improve performance. Standard FR-4 single-sided copper clad will have an approximate Thermal resistance (θSA) ranging from: 1.5 × 1.5 in. sq. 20–27°C/W 2 × 2 in. sq. 16–23°C/W (TA=28°C, Sine wave testing, 1 oz. Copper) The above values for θSA vary widely due to dimensional proportions (i.e. variations in width and length will vary θSA). For audio applications, where peak power levels are short in duration, this part will perform satisfactory with less heatsinking/copper clad area. As with any high power design proper bench testing should be undertaken to assure the design can dissipate the required power. Proper bench testing requires attention to worst case ambient temperature and air flow. At high power dissipation levels the part will show a tendency to increase saturation voltages, thus limiting the undistorted power levels. DETERMINING MAXIMUM POWER DISSIPATION For a single-ended class AB power amplifier, the theoretical maximum power dissipation point is a function of the supply voltage, VS, and the load resistance, RL and is given by the following equation: (single channel) PDMAX (W) = [VS2 / (2 • π2 • RL)] The above equation is for a single channel class-AB power amplifier. For dual amplifiers such as the LM4755, the equation for calculating the total maximum power dissipated is: (dual channel) PDMAX (W) = 2 • [VS2 / (2 • π2 • RL)] or VS2 / (π2 • RL) (Bridged Outputs) PDMAX (W) = 4[VS2 / (2π2 • RL)] Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM4755 17 LM4755 SNAS010E – FEBRUARY 1999 – REVISED APRIL 2013 www.ti.com HEATSINK DESIGN EXAMPLE Determine the system parameters: VS = 24V Operating Supply Voltage RL = 4Ω Minimum Load Impedance TA = 55°C Worst Case Ambient Temperature Device parameters from the datasheet: TJ = 150°C Maximum Junction Temperature θJC = 2°C/W Junction-to-Case Thermal Resistance Calculations: 2 • PDMAX = 2 • [VS2 / 2 • π2 • RL)] = (24V)2 / (2 • π2 • 4Ω) = 14.6W θSA ≤ [(TJ-TA) / PDMAX] - θJC–θCS = [ (150°C - 55°C) / 14.6W] - 2°C/W–0.2°C/W = 4.3°C/W Conclusion: Choose a heatsink with θSA ≤ 4.3°C/W. DDPAK HEATSINK DESIGN EXAMPLES Example 1: (Stereo Single-Ended Output) Given: TA=30°C TJ=150°C RL=4Ω VS=12V θJC=2°C/W PDMAX from PD vs PO Graph: PDMAX ≈ 3.7W (4) Calculating PDMAX: PDMAX = VCC2/(π2RL) = (12V)2/π2(4Ω)) = 3.65W (5) Calculating Heatsink Thermal Resistance: θSA < TJ − TA / PDMAX − θJC − θCS θSA < 120°C/3.7W − 2.0°C/W − 0.2°C/W = 30.2°C/W (6) (7) Therefore the recommendation is to use 1.5 × 1.5 square inch of single-sided copper clad. Example 2: (Stereo Single-Ended Output) Given: TA=50°C TJ=150°C RL=4Ω VS=12V θJC=2°C/W PDMAX from PD vs PO Graph: PDMAX ≈ 3.7W (8) Calculating PDMAX: PDMAX = VCC2/(π2RL)= (12V) 2/(π2(4Ω)) = 3.65W (9) Calculating Heatsink Thermal Resistance: θSA < [(TJ − TA) / PDMAX] − θJC − θCS 18 (10) Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM4755 LM4755 www.ti.com SNAS010E – FEBRUARY 1999 – REVISED APRIL 2013 θSA < 100°C/3.7W − 2.0°C/W − 0.2°C/W = 24.8°C/W (11) Therefore the recommendation is to use 2.0 × 2.0 square inch of single-sided copper clad. Example 3: (Bridged Output) Given: TA=50°C TJ=150°C RL=8Ω VS=12V θJC=2°C/W Calculating PDMAX: PDMAX = 4[VCC2/(2π2RL)] = 4(12V)2/(2π2(8Ω)) = 3.65W (12) Calculating Heatsink Thermal Resistance: θSA < [(TJ − TA) / PDMAX] − θJC − θCS θSA < 100°C / 3.7W − 2.0°C/W − 0.2°C/W = 24.8°C/W (13) (14) Therefore the recommendation is to use 2.0 × 2.0 square inch of single-sided copper clad. LAYOUT AND GROUND RETURNS Proper PC board layout is essential for good circuit performance. When laying out a PC board for an audio power amplifier, particular attention must be paid to the routing of the output signal ground returns relative to the input signal and bias capacitor grounds. To prevent any ground loops, the ground returns for the output signals should be routed separately and brought together at the supply ground. The input signal grounds and the bias capacitor ground line should also be routed separately. The 0.1 µF high frequency supply bypass capacitor should be placed as close as possible to the IC. Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM4755 19 LM4755 SNAS010E – FEBRUARY 1999 – REVISED APRIL 2013 www.ti.com PC BOARD LAYOUT-COMPOSITE Figure 46. 20 Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM4755 LM4755 www.ti.com SNAS010E – FEBRUARY 1999 – REVISED APRIL 2013 PC BOARD LAYOUT-SILK SCREEN Figure 47. Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM4755 21 LM4755 SNAS010E – FEBRUARY 1999 – REVISED APRIL 2013 www.ti.com PC BOARD LAYOUT-SOLDER SIDE Figure 48. 22 Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM4755 LM4755 www.ti.com SNAS010E – FEBRUARY 1999 – REVISED APRIL 2013 REVISION HISTORY Changes from Revision D (April 2013) to Revision E • Page Changed layout of National Data Sheet to TI format .......................................................................................................... 22 Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM4755 23 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) LM4755TSX/NOPB ACTIVE DDPAK/ TO-263 KTW 9 500 RoHS-Exempt & Green SN Level-3-245C-168 HR -20 to 80 LM4755TS (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of