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LM4855ITL/NOPB

LM4855ITL/NOPB

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    WFBGA18

  • 描述:

    IC AMP AUDIO PWR 1.5W AB 18USMD

  • 数据手册
  • 价格&库存
LM4855ITL/NOPB 数据手册
LM4855 www.ti.com SNAS164C – JUNE 2002 – REVISED MAY 2013 LM4855 Integrated Audio Amplifier System Check for Samples: LM4855 FEATURES DESCRIPTION • The LM4855 is an audio power amplifier system capable of delivering 1.1W (typ) of continuous average power into a mono 8Ω bridged-tied load (BTL) with 1% THD+N and 115mW (typ) per channel of continuous average power into stereo 32Ω BTL loads with 0.5% THD+N, using a 5V power supply. 1 2 • • • • • • • 1.1W (Typ) Output Power with 8Ω Mono BTL Load 115mW (Typ) Output Power with Stereo 32Ω BTL Loads SPI Programmable 32 Step Digital Volume Control Eight Distinct Output Modes DSBGA and WQFN Surface Mount Packaging "Click and Pop" Suppression Circuitry Thermal Shutdown Protection Low Shutdown Current (0.1uA, Typ) KEY SPECIFICATIONS • • • THD+N at 1kHz, 1.1W into 8Ω BTL: 1.0% (Typ) THD+N at 1kHz, 115mW into 32Ω BTL: 0.5% (Typ) Single Supply Operation: 2.6 to 5.0V The LM4855 features a 32 step digital volume control and eight distinct output modes. The digital volume control and output modes are programmed through a three-wire SPI serial control interface, that allows flexibility in routing and mixing audio channels. The LM4855 is designed for cellular phone, PDA, and other portable handheld applications. It delivers high quality output power from a surface-mount package and requires only six external components. The industry leading DSBGA package only utilizes 2mm x 2.3mm of PCB space, making the LM4855 the most space efficient audio sub system available today. APPLICATIONS • • Moblie Phones PDAs 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2002–2013, Texas Instruments Incorporated LM4855 SNAS164C – JUNE 2002 – REVISED MAY 2013 www.ti.com Typical Application Figure 1. Typical Audio Amplifier Application Circuit 2 Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LM4855 LM4855 www.ti.com SNAS164C – JUNE 2002 – REVISED MAY 2013 Connection Diagrams Figure 3. Top View (Bump-Side Down) See Package Number YZR0018AAA Figure 2. WQFN Package Top View See Package Number NHW0024A for Exposed-DAP WQFN These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) (2) Supply Voltage 6.0V −65°C to +150°C Storage Temperature ESD Susceptibility (3) 2.0kV ESD Machine model (4) 200V Junction Temperature (TJ) Solder Information 150°C Vapor Phase (60 sec.) 215°C Infrared (15 sec.) θJA (typ) - NHW0024A Thermal Resistance (1) (2) (3) (4) (5) θJC (typ) - NHW0024A 220°C 42°C/W 3.0°C/W θJA (typ) - YZR0018AAA 48°C/W (5) θJC (typ) - YZR0018AAA 23°C/W (5) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications. Human body model, 100pF discharged through a 1.5kΩ resistor. Machine Model ESD test is covered by specification EIAJ IC-121-1981. A 200pF cap is charged to the specified voltage, then discharged directly into the IC with no external series resistor (resistance of discharge path must be under 50Ω). The given θJA and θJC are for an LM4855 mounted on a demonstration board with a 4in2 area of 1oz printed circuit board copper ground plane. Operating Ratings (1) Temperature Range −40°C to 85°C Supply Voltage VDD 2.6V ≤ VDD ≤ 5.0V (1) Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LM4855 3 LM4855 SNAS164C – JUNE 2002 – REVISED MAY 2013 www.ti.com 5V Electrical Characteristics (1) (2) The following specifications apply for VDD= 5.0V, TA= 25°C unless otherwise specified. Symbol Parameter Conditions LM4855 Typical IDD Supply Current (3) Limits (4) Units (Limits) Output mode 1 VIN = 0V; No loads 5.7 8 mA (max) Output mode 1 VIN = 0V; Loaded (Fig.1) 6.7 9 mA (max) Output modes 2, 3, 4, 5, 6, 7 VIN = 0V; No loads 7.5 11 mA (max) Output modes 2, 3, 4, 5, 6, 7 VIN = 0V; Loaded (Fig. 1) 8.5 12 mA (max) ISD Shutdown Current Output mode 0 0.1 2.0 µA (max) VOS Output Offset Voltage VIN = 0V 5.0 40 mV (max) SPKROUT; RL = 4Ω THD+N = 1%; f = 1kHz, LM4855LQ 1.5 SPKROUT; RL = 8Ω THD+N = 1%; f = 1kHz 1.1 0.8 W (min) ROUT and LOUT; RL = 32Ω THD+N = 0.5%; f = 1kHz 115 70 mW (min) PO Output Power W SPKROUT f = 20Hz to 20kHZ POUT = 400mW; RL = 8Ω 0.5 % ROUT and LOUT f = 20Hz to 20kHZ POUT = 50mW; RL = 32Ω 0.5 % THD+N Total Harmonic Distortion Plus Noise NOUT Output Noise A-weighted (5) 29 57 54 dB (min) Power Supply Rejection Ratio SPKROUT VRIPPLE = 200mVPP; f = 217Hz, CB = 1.0µF All audio inputs terminated into 50Ω; Output referred Gain (BTL) = 12dB Output Mode 1, 3, 5, 7 Output Mode 2, 3 62 59 dB (min) Output Mode 4, 5 57 54 dB (min) Output Mode 6, 7 54 PSRR Power Supply Rejection Ratio ROUTand LOUT µV VRIPPLE = 200mVPP; f = 217Hz, CB = 1.0µF All audio inputs terminated into 50Ω; Output referred Maximum gain setting 51 dB (min) VIH Logic High Input Voltage 1.4 VDD V (min) V (max) VIL Logic Low Input Voltage 0.4 GND V (max) V (min) (1) (2) (3) (4) (5) 4 Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. All voltages are measured with respect to the ground pin, unless otherwise specified. Typical specifications are specified at +25°C and represent the most likely parametric norm. Tested limits are ensured to AOQL (Average Outgoing Quality Level). Please refer to the Output Noise vs Output Mode table in the Typical Performance Characteristics section for more details. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LM4855 LM4855 www.ti.com SNAS164C – JUNE 2002 – REVISED MAY 2013 5V Electrical Characteristics(1)(2) (continued) The following specifications apply for VDD= 5.0V, TA= 25°C unless otherwise specified. Symbol Parameter Conditions LM4855 Typical Digital Volume Range (RIN and LIN) (3) Limits (4) Units (Limits) Input referred minimum gain -34.5 -35.1 -33.9 dB (min) dB (max) Input referred maximum gain 12.0 11.4 12.6 dB (min) dB (max) Digital Volume Stepsize 1.5 Digital Volume Stepsize Error ±0.1 ±0.6 dB ( max) dB dB (min) dB (max) Phone_In_IHF Volume BTL gain from Phone_In _IHF to SPKROUT 12 11.4 12.6 Phone _In_IHF Mute Attenuation Output Mode 2, 4, 6 80 72 dB (min) 20 15 25 kΩ (min) kΩ (max) Maximum gain setting 50 37.5 62.5 kΩ (min) kΩ (max) Mininum gain setting 100 75 125 kΩ (min) kΩ (max) Maximum gain setting 33.5 25 42 kΩ (min) kΩ (max) Mininum gain setting 100 75 125 kΩ (min) kΩ (max) 170 Phone_In_IHF Input Impedance Phone_In_HS Input Impedance RIN and LIN Input Impedance tSD Thermal Shutdown Temperature 150 °C (min) tES Enable Setup Time (ENB) 20 ns (min) tEH Enable Hold Time (ENB) 20 ns (min) tEL Enable Low Time (ENB) 30 ns (min) tDS Data Setup Time (DATA) 20 ns (min) tDH Data Hold Time (DATA) 20 ns (min) tCS Clock Setup Time (CLK) 20 ns (min) tCH Clock Logic High Time (CLK) 50 ns (min) tCL Clock Logic Low Time (CLK) 50 ns (min) fCLK Clock Frequency DC 10 (min) MHz (max) Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LM4855 5 LM4855 SNAS164C – JUNE 2002 – REVISED MAY 2013 www.ti.com 3V Electrical Characteristics (1) (2) The following specifications apply for VDD= 3.0V, TA= 25°C unless otherwise specified. Symbol Parameter Conditions LM4855 Typical Limits Output mode 1 VIN = 0V; No loads 4.5 7 mA (max) Output mode 1 VIN = 0V; Loaded (Fig.1) 5.0 8 mA (max) Output modes 2, 3, 4, 5, 6, 7 VIN = 0V; No loads 6.5 10 mA (max) Output modes 2, 3, 4, 5, 6, 7 VIN = 0V; Loaded (Fig. 1) 7 11 mA (max) 0.1 2.0 µA (max) 40 mV (max) (3) IDD Supply Current Units (Limits) (4) ISD Shutdown Current Output mode 0 VOS Output Offset Voltage VIN = 0V 5.0 SPKROUT; RL = 4Ω THD+N = 1%; f = 1kHz, LM4855LQ 430 SPKROUT; RL = 8Ω THD+N = 1%; f = 1kHz 340 300 mW (min) ROUT and LOUT; RL = 32Ω THD+N = 0.5%; f = 1kHz 25 20 mW (min) SPKROUT f = 20Hz to 20kHZ POUT = 250mW; RL = 8Ω 0.5 % ROUT and LOUT f = 20Hz to 20kHZ POUT = 20mW; RL = 32Ω 0.5 % PO Output Power mW THD+N Total Harmonic Distortion Plus Noise NOUT Output Noise A-weighted (5) 29 58 55 dB (min) Power Supply Rejection Ratio SPKROUT VRIPPLE = 200mVPP; f = 217Hz, CB = 1.0µF All audio inputs terminated into 50Ω; Output referred Gain (BTL) = 12dB Output Mode 1, 3, 5, 7 Power Supply Rejection Ratio ROUTand LOUT VRIPPLE = 200mVPP; f = 217Hz, CB = 1.0µF All audio inputs terminated into 50Ω; Output referred Maximum gain setting Output Mode 2, 3 63 60 dB (min) Output Mode 4, 5 58 55 dB (min) Output Mode 6, 7 55 52 dB (min) PSRR µV VIH Logic High Input Voltage 1.4 VDD V (min) V (max) VIL Logic Low Input Voltage 0.4 GND V (max) V (min) (1) (2) (3) (4) (5) 6 Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. All voltages are measured with respect to the ground pin, unless otherwise specified. Typical specifications are specified at +25°C and represent the most likely parametric norm. Tested limits are ensured to AOQL (Average Outgoing Quality Level). Please refer to the Output Noise vs Output Mode table in the Typical Performance Characteristics section for more details. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LM4855 LM4855 www.ti.com SNAS164C – JUNE 2002 – REVISED MAY 2013 3V Electrical Characteristics(1)(2) (continued) The following specifications apply for VDD= 3.0V, TA= 25°C unless otherwise specified. Symbol Parameter Conditions LM4855 Typical Limits Input referred minimum gain -34.5 -35.1 -33.9 dB (min) dB (max) Input referred maximum gain 12.0 11.4 12.6 dB (min) dB (max) (3) Digital Volume Range (RIN and LIN) Units (Limits) (4) Digital Volume Stepsize 1.5 Digital Volume Stepsize Error ±0.1 ±0.6 dB ( max) dB Phone_In_IHF Volume BTL gain from Phone_In _IHF to SPKROUT 12 11.4 12.6 dB (min) dB (max) Phone _In_IHF Mute Attenuation Output Mode 2, 4, 6 80 72 dB (min) 20 15 25 kΩ (min) kΩ (max) Maximum gain setting 50 37.5 62.5 kΩ (min) kΩ (max) Mininum gain setting 100 75 125 kΩ (min) kΩ (max) Maximum gain setting 33.5 25 42 kΩ (min) kΩ (max) Mininum gain setting 100 75 125 kΩ (min) kΩ (max) 170 150 °C (min) Phone_In_IHF Input Impedance Phone_In_HS Input Impedance RIN and LIN Input Impedance tSD Thermal Shutdown Temperature tES Enable Setup Time (ENB) 20 ns (min) tEH Enable Hold Time (ENB) 20 ns (min) tEL Enable Low Time (ENB) 30 ns (min) tDS Data Setup Time (DATA) 20 ns (min) tDH Data Hold Time (DATA) 20 ns (min) tCS Clock Setup Time (CLK) 20 ns (min) tCH Clock Logic High Time (CLK) 50 ns (min) tCL Clock Logic Low Time (CLK) 50 ns (min) fCLK Clock Frequency DC 10 (min) MHz (max) External Components Description Components Functional Description 1. CIN This is the input coupling capacitor. It blocks the DC voltage and couples the input signal to the amplifier's input terminals. CIN also creates a highpass filter with the internal resistor Ri (Input Impedance) at fc = 1/(2πRiCIN). 2. CS This is the supply bypass capacitor. It filters the supply voltage applied to the VDD pin and helps maintain the LM4855's PSRR. 3. CB This is the BYPASS pin capacitor. It filters the VDD / 2 voltage and helps maintain the LM4855's PSRR. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LM4855 7 LM4855 SNAS164C – JUNE 2002 – REVISED MAY 2013 www.ti.com Typical Performance Characteristics 8 THD+N vs Frequency LM4855LQ THD+N vs Frequency LM4855LQ Figure 4. Figure 5. THD+N vs Frequency THD+N vs Frequency Figure 6. Figure 7. THD+N vs Frequency THD+N vs Frequency Figure 8. Figure 9. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LM4855 LM4855 www.ti.com SNAS164C – JUNE 2002 – REVISED MAY 2013 Typical Performance Characteristics (continued) THD+N vs Frequency THD+N vs Frequency Figure 10. Figure 11. THD+N vs Frequency THD+N vs Frequency Figure 12. Figure 13. THD+N vs Output Power LM4855LQ THD+N vs Output Power LM4855LQ Figure 14. Figure 15. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LM4855 9 LM4855 SNAS164C – JUNE 2002 – REVISED MAY 2013 www.ti.com Typical Performance Characteristics (continued) 10 THD+N vs Output Power THD+N vs Output Power Figure 16. Figure 17. THD+N vs Output Power THD+N vs Output Power Figure 18. Figure 19. Power Supply Rejection Ratio Power Supply Rejection Ratio Figure 20. Figure 21. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LM4855 LM4855 www.ti.com SNAS164C – JUNE 2002 – REVISED MAY 2013 Typical Performance Characteristics (continued) Power Supply Rejection Ratio Power Supply Rejection Ratio Figure 22. Figure 23. Power Supply Rejection Ratio Power Supply Rejection Ratio Figure 24. Figure 25. Output Power vs Supply Voltage Output Power vs Supply Voltage Figure 26. Figure 27. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LM4855 11 LM4855 SNAS164C – JUNE 2002 – REVISED MAY 2013 www.ti.com Typical Performance Characteristics (continued) 12 Output Power vs Load Resistance Output Power vs Load Resistance Figure 28. Figure 29. Power Dissipation vs Output Power Power Dissipation vs Output Power Figure 30. Figure 31. Supply Current vs Supply Voltage Channel Separation Figure 32. Figure 33. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LM4855 LM4855 www.ti.com SNAS164C – JUNE 2002 – REVISED MAY 2013 Typical Performance Characteristics (continued) Frequency Response Frequency Response Figure 34. Figure 35. Frequency Response Figure 36. Table 1. Output Noise vs Output Mode (VDD = 3V, 5V) (1) (2) (3) Output Mode SPKROUT Output Noise (µV) LOUT/ROUT Output Noise (µV) 1 29 X 2 X 28 (G1 = 0dB) 31 (G1 = 6dB) 3 29 28 (G1 = 0dB) 31 (G1 = 6dB) 4 X 28 (G2 = 0dB) 38 (G2 = 12dB) 5 29 28(G2 = 0dB) 38 (G2 = 12dB) 6 X 38 (G2 = 0dB) 41 (G1 = 0dB) 48 (G1 = 6dB) 7 29 38 (G2 = 0dB) 41 (G1 = 0dB) 48 (G1 = 6dB) (1) (2) (3) G1 = gain from PHS to LOUT/ROUT G2 = gain from LIN/RIN to LOUT/ROUT A - weighted filter used Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LM4855 13 LM4855 SNAS164C – JUNE 2002 – REVISED MAY 2013 www.ti.com APPLICATION INFORMATION SPI PIN DESCRIPTION DATA: This is the serial data input pin. CLK: This is the clock input pin. ENB: This is the SPI enable pin and is active-high. SPI OPERATION DESCRIPTION The serial data bits are organized into a field which contains 8 bits of data defined by Table 2. The Data 0 to Data 2 bits determine the output mode of the LM4855 as shown in Table 3. The Data 3 to Data 7 bits determine the volume level setting as illustrated by Table 4. For each SPI transfer, the data bits are written to the DATA pin with the least significant bit (LSB) first. All serial data are sampled at the rising edge of the CLK signal. Once all the data bits have been sampled, ENB transitions from logic-high to logic-low to complete the SPI sequence. All 8 bits must be received before any data latch can occur. Any excess CLK and DATA transitions will be ignored after the eighth rising clock edge has occurred. For any data sequence longer than 8 bits, only the first 8 bits will get loaded into the shift register and the rest of the bits will be disregarded. Table 2. Bit Allocation Data 0 Mode Select Data 1 Mode Select Data 2 Mode Select Data 3 Volume Control Data 4 Volume Control Data 5 Volume Control Data 6 Volume Control Data 7 Volume Control Table 3. Output Mode Selection (1) Output Mode # Data 2 Data 1 Data 0 SPKROUT ROUT LOUT 0 0 0 0 SD SD SD 1 0 0 1 12dB x PIHF SD SD 2 0 1 0 MUTE G1 x PHS G1 x PHS 3 0 1 1 12dB x PIHF G1 x PHS G1 x PHS 4 1 0 0 MUTE G2 x R G2 x L 5 1 0 1 12dB x PIHF G2 x R G2 x L 6 1 1 0 MUTE (G1 x PHS) + (G2 x R) (G1 x PHS) + (G2 x L) 7 1 1 1 12dB x PIHF (G1 x PHS) + (G2 x R) (G1 x PHS) + (G2 x L) (1) 14 R = Rin L = Lin PIHF = Phone_In_IHF PHS = Phone_In_HS SD = Shutdown Mode MUTE = Mute Mode G1 = gain from PHS to LOUT/ROUT G2 = gain from LIN/ RIN to LOUT/ROUT Default Mode upon device power-up is Output Mode 0 Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LM4855 LM4855 www.ti.com SNAS164C – JUNE 2002 – REVISED MAY 2013 Table 4. Volume Control Settings Gain (dB) G2 G1 RIN, LIN to ROUT, LOUT Phone_In_HS to ROUT, LOUT -34.5 Data 7 Data 6 Data 5 Data 4 Data 3 -40.5 0 0 0 0 0 -33.0 -39.0 0 0 0 0 1 -31.5 -37.5 0 0 0 1 0 -30.0 -360 0 0 0 1 1 -28.5 -34.5 0 0 1 0 0 -27.0 -33.0 0 0 1 0 1 -25.5 -31.5 0 0 1 1 0 -24.0 -30.0 0 0 1 1 1 -22.5 -28.5 0 1 0 0 0 -21.0 -27.0 0 1 0 0 1 -19.5 -25.5 0 1 0 1 0 -18.0 -24.0 0 1 0 1 1 -16.5 -22.5 0 1 1 0 0 -15.0 -21.0 0 1 1 0 1 -13.5 -19.5 0 1 1 1 0 -12.0 -18.0 0 1 1 1 1 -10.5 -16.5 1 0 0 0 0 -9.0 -15.0 1 0 0 0 1 -7.5 -13.5 1 0 0 1 0 -6.0 -12.0 1 0 0 1 1 -4.5 -10.5 1 0 1 0 0 -3.0 -9.0 1 0 1 0 1 -1.5 -7.5 1 0 1 1 0 0.0 -6.0 1 0 1 1 1 1.5 -4.5 1 1 0 0 0 3.0 -3.0 1 1 0 0 1 4.5 -1.5 1 1 0 1 0 6.0 0 1 1 0 1 1 7.5 1.5 1 1 1 0 0 9.0 3.0 1 1 1 0 1 10.5 4.5 1 1 1 1 0 12.0 6.0 1 1 1 1 1 Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LM4855 15 LM4855 SNAS164C – JUNE 2002 – REVISED MAY 2013 www.ti.com SPI OPERATIONAL REQUIREMENTS 1. The data bits are transmitted with the LSB first. 2. The maximum clock rate is 10MHz for the CLK pin. 3. CLK must remain logic-high for at least 50ns (tCH ) after the rising edge of CLK, and CLK must remain logiclow for at least 50ns (tCL) after the falling edge of CLK. 4. The serial data bits are sampled at the rising edge of CLK. Any transition on DATA must occur at least 20ns (tDS) before the rising edge of CLK. Also, any transition on DATA must occur at least 20ns (tDH) after the rising edge of CLK and stabilize before the next rising edge of CLK. 5. ENB should be logic-high only during serial data transmission. 6. ENB must be logic-high at least 20ns (tES ) before the first rising edge of CLK, and ENB has to remain logichigh at least 20ns (tEH) after the eighth rising edge of CLK. 7. If ENB remains logic-low for more than 10ns before all 8 bits are transmitted then the data latch will be aborted. 8. If ENB is logic-high for more than 8 CLK pulses then only the first 8 data bits will be latched and activated when ENB transitions to logic-low. 9. ENB must remain logic-low for at least 30ns (tEL ) to latch in the data. 10. Coincidental rising or falling edges of CLK and ENB are not allowed. If CLK is to be held logic-high after the data transmission, the falling edge of CLK must occur at least 20ns (tCS) before ENB transitions to logic-high for the next set of data. Figure 37. SPI Timing Diagram 16 Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LM4855 LM4855 www.ti.com SNAS164C – JUNE 2002 – REVISED MAY 2013 EXPOSED-DAP MOUNTING CONSIDERATIONS The LM4855's exposed-DAP (die attach paddle) package (NHW) provides a low thermal resistance between the die and the PCB to which the part is mounted and soldered. This allows rapid heat transfer from the die to the surrounding PCB copper area heatsink, copper traces, ground plane, and finally, surrounding air. The result is a low voltage audio power amplifier that produces 1.1W dissipation in a 8Ω load at ≤ 1% THD+N. This high power is achieved through careful consideration of necessary thermal design. Failing to optimize thermal design may compromise the LM4855's high power performance and activate unwanted, though necessary, thermal shutdown protection. The NHW package must have its DAP soldered to a copper pad on the PCB. The DAP's PCB copper pad is then, ideally, connected to a large plane of continuous unbroken copper. This plane forms a thermal mass, heat sink, and radiation area. Place the heat sink area on either outside plane in the case of a two-sided or multi-layer PCB. (The heat sink area can also be placed on an inner layer of a multi-layer board. The thermal resistance, however, will be higher.) Connect the DAP copper pad to the inner layer or backside copper heat sink area with 6 (3 X 2) (NHW) vias. The via diameter should be 0.012in - 0.013in with a 1.27mm pitch. Ensure efficient thermal conductivity by plugging and tenting the vias with plating and solder mask, respectively. Best thermal performance is achieved with the largest practical copper heat sink area. If the heatsink and amplifier share the same PCB layer, a nominal 2.5in2 (min) area is necessary for 5V operation with a 4Ω load. Heatsink areas not placed on the same PCB layer as the LM4855 should be 5in2 (min) for the same supply voltage and load resistance. The last two area recommendations apply for 25°C ambient temperature. Increase the area to compensate for ambient temperatures above 25°C. In all circumstances and under all conditions, the junction temperature must be held below 150°C to prevent activating the LM4855's thermal shutdown protection. Further detailed and specific information concerning PCB layout and fabrication and mounting an NHW (WQFN) is found in TI's AN1187. PCB LAYOUT AND SUPPLY REGULATION CONSIDERATIONS FOR DRIVING 3Ω AND 4Ω LOADS Power dissipated by a load is a function of the voltage swing across the load and the load's impedance. As load impedance decreases, load dissipation becomes increasingly dependent on the interconnect (PCB trace and wire) resistance between the amplifier output pins and the load's connections. Residual trace resistance causes a voltage drop, which results in power dissipated in the trace and not in the load as desired. For example, 0.1Ω trace resistance reduces the output power dissipated by a 4Ω load from 1.7W to 1.6W. The problem of decreased load dissipation is exacerbated as load impedance decreases. Therefore, to maintain the highest load dissipation and widest output voltage swing, PCB traces that connect the output pins to a load must be as wide as possible. Poor power supply regulation adversely affects maximum output power. A poorly regulated supply's output voltage decreases with increasing load current. Reduced supply voltage causes decreased headroom, output signal clipping, and reduced output power. Even with tightly regulated supplies, trace resistance creates the same effects as poor supply regulation. Therefore, making the power supply traces as wide as possible helps maintain full output voltage swing. BRIDGE CONFIGURATION EXPLANATION As shown in Figure 1, the LM4855 consists of three pairs of output amplifier blocks (A4-A6). A4, A5, and A6 consist of bridged-tied amplifier pairs that drive LOUT, ROUT, and SPKROUT respectively. The LM4855 drives a load, such as a speaker, connected between outputs, SPKROUT+ and SPKROUT-. In the amplifier block A6, the output of the amplifier that drives SPKROUT- serves as the input to the unity gain inverting amplifier that drives SPKROUT+. This results in both amplifiers producing signals identical in magnitude, but 180° out of phase. Taking advantage of this phase difference, a load is placed between SPKROUT- and SPKROUT+ and driven differentially (commonly referred to as 'bridge mode'). This results in a differential or BTL gain of: AVD = 2(Rf/Ri) = 2 (1) Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LM4855 17 LM4855 SNAS164C – JUNE 2002 – REVISED MAY 2013 www.ti.com Bridge mode amplifiers are different from single-ended amplifiers that drive loads connected between a single amplifier's output and ground. For a given supply voltage, bridge mode has a distinct advantage over the singleended configuration: its differential output doubles the voltage swing across the load. Theoretically, this produces four times the output power when compared to a single-ended amplifier under the same conditions. This increase in attainable output power assumes that the amplifier is not current limited and that the output signal is not clipped. Another advantage of the differential bridge output is no net DC voltage across the load. This is accomplished by biasing SPKROUT- and SPKROUT+ outputs at half-supply. This eliminates the coupling capacitor that single supply, single-ended amplifiers require. Eliminating an output coupling capacitor in a typical single-ended configuration forces a single-supply amplifier's half-supply bias voltage across the load. This increases internal IC power dissipation and may permanently damage loads such as speakers. POWER DISSIPATION Power dissipation is a major concern when designing a successful single-ended or bridged amplifier. A direct consequence of the increased power delivered to the load by a bridge amplifier is higher internal power dissipation. The LM4855 has a pair of bridged-tied amplifiers driving a handsfree speaker, SPKROUT. The maximum internal power dissipation operating in the bridge mode is twice that of a single-ended amplifier. From Equation (2), assuming a 5V power supply and an 8Ω load, the maximum SPKROUT power dissipation is 634mW. PDMAX-SPKROUT = 4(VDD)2/(2π2 RL): Bridge Mode (2) The LM4855 also has 2 pairs of bridged-tied amplifiers driving stereo headphones, ROUT and LOUT. The maximum internal power dissipation for ROUT and LOUT is given by equation (3) and (4). From Equations (3) and (4), assuming a 5V power supply and a 32Ω load, the maximum power dissipation for LOUT and ROUT is 158mW, or 316mW total. PDMAX-LOUT = 4(VDD)2/(2π2 RL): Bridge Mode PDMAX-ROUT = 4(VDD)2/(2π2 RL): Bridge Mode (3) (4) The maximum internal power dissipation of the LM4855 occurs when all 3 amplifiers pairs are simultaneously on; and is given by Equation (5). PDMAX-TOTAL = PDMAX-SPKROUT + PDMAX-LOUT + PDMAX-ROUT (5) The maximum power dissipation point given by Equation (5) must not exceed the power dissipation given by Equation (6): PDMAX' = (TJMAX - TA)/ θJA (6) The LM4855's TJMAX = 150°C. In the YZR package, the LM4855's θJA is 48°C/W. In the NHW package soldered to a DAP pad that expands to a copper area of 2.5in2 on a PCB, the LM4855's θJA is 42°C/W. At any given ambient temperature TA, use Equation (6) to find the maximum internal power dissipation supported by the IC packaging. Rearranging Equation (6) and substituting PDMAX-TOTAL for PDMAX' results in Equation (7). This equation gives the maximum ambient temperature that still allows maximum stereo power dissipation without violating the LM4855's maximum junction temperature. TA = TJMAX - PDMAX-TOTALθJA (7) For a typical application with a 5V power supply and an 8Ω load, the maximum ambient temperature that allows maximum stereo power dissipation without exceeding the maximum junction temperature is approximately 104°C for the YZR package. TJMAX = PDMAX-TOTAL θJA + TA (8) Equation (8) gives the maximum junction temperature TJMAX. If the result violates the LM4855's 150°C, reduce the maximum junction temperature by reducing the power supply voltage or increasing the load resistance. Further allowance should be made for increased ambient temperatures. The above examples assume that a device is a surface mount part operating around the maximum power dissipation point. Since internal power dissipation is a function of output power, higher ambient temperatures are allowed as output power or duty cycle decreases. If the result of Equation (5) is greater than that of Equation (6), then decrease the supply voltage, increase the load impedance, or reduce the ambient temperature. If these measures are insufficient, a heat sink can be added to reduce θJA. The heat sink can be created using additional 18 Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LM4855 LM4855 www.ti.com SNAS164C – JUNE 2002 – REVISED MAY 2013 copper area around the package, with connections to the ground pin(s), supply pin and amplifier output pins. External, solder attached SMT heatsinks such as the Thermalloy 7106D can also improve power dissipation. When adding a heat sink, the θJA is the sum of θJC, θCS, and θSA. (θJC is the junction-to-case thermal impedance, θCS is the case-to-sink thermal impedance, and θSA is the sink-to-ambient thermal impedance.) Refer to the Typical Performance Characteristics curves for power dissipation information at lower output power levels. POWER SUPPLY BYPASSING As with any power amplifier, proper supply bypassing is critical for low noise performance and high power supply rejection. Applications that employ a 5V regulator typically use a 10µF in parallel with a 0.1µF filter capacitors to stabilize the regulator's output, reduce noise on the supply line, and improve the supply's transient response. However, their presence does not eliminate the need for a local 1.0µF tantalum bypass capacitance connected between the LM4855's supply pins and ground. Keep the length of leads and traces that connect capacitors between the LM4855's power supply pin and ground as short as possible. Connecting a 1µF capacitor, CB, between the BYPASS pin and ground improves the internal bias voltage's stability and improves the amplifier's PSRR. The PSRR improvements increase as the bypass pin capacitor value increases. Too large, however, increases turn-on time and can compromise the amplifier's click and pop performance. The selection of bypass capacitor values, especially CB, depends on desired PSRR requirements, click and pop performance (as explained in the section Selecting External Components) system cost, and size constraints. SELECTING EXTERNAL COMPONENTS Input Capacitor Value Selection Amplifying the lowest audio frequencies requires high value input coupling capacitor (Ci in Figure 1). A high value capacitor can be expensive and may compromise space efficiency in portable designs. In many cases, however, the speakers used in portable systems, whether internal or external, have little ability to reproduce signals below 150Hz. Applications using speakers with this limited frequency response reap little improvement by using large input capacitor. The internal input resistor (Ri) and the input capacitor (Ci) produce a high pass filter cutoff frequency that is found using Equation (9). fc = 1 / (2πRiCi) (9) As an example when using a speaker with a low frequency limit of 150Hz, Ci, using Equation (9) is 0.063µF. The 0.22µF Ci shown in Figure 1 allows the LM4855 to drive high efficiency, full range speaker whose response extends below 40Hz. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LM4855 19 LM4855 SNAS164C – JUNE 2002 – REVISED MAY 2013 www.ti.com Bypass Capacitor Value Selection Besides minimizing the input capacitor size, careful consideration should be paid to value of CB, the capacitor connected to the BYPASS pin. Since CB determines how fast the LM4855 settles to quiescent operation, its value is critical when minimizing turn-on pops. The slower the LM4855's outputs ramp to their quiescent DC voltage (nominally VDD/2), the smaller the turn-on pop. Choosing CB equal to 1.0µF along with a small value of Ci (in the range of 0.1µF to 0.39µF), produces a click-less and pop-less shutdown function. As discussed above, choosing Ci no larger than necessary for the desired bandwidth helps minimize clicks and pops. CB's value should be in the range of 5 times to 7 times the value of Ci. This ensures that output transients are eliminated when power is first applied or the LM4855 resumes operation after shutdown. Demonstration Board Layout 20 Figure 38. Recommended YZR PC Board Layout: Top Silkscreen Figure 39. Recommended YZR PC Board Layout: Top Layer Figure 40. Recommended YZR PC Board Layout: Middle Layer Figure 41. Recommended YZR PC Board Layout: Bottom Layer Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LM4855 LM4855 www.ti.com SNAS164C – JUNE 2002 – REVISED MAY 2013 Figure 42. Recommended NHW PC Board Layout: Top Silkcreen Layer Figure 43. Recommended NHW PC Board Layout: Top Layer Figure 44. Recommended NHW PC Board Layout: Inner Layer 1 Figure 45. Recommended NHW PC Board Layout: Inner Layer 2 Figure 46. Recommended NHW PC Board Layout: Bottom Layer Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LM4855 21 LM4855 SNAS164C – JUNE 2002 – REVISED MAY 2013 www.ti.com REVISION HISTORY Changes from Revision B (May 2013) to Revision C • 22 Page Changed layout of National Data Sheet to TI format .......................................................................................................... 21 Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LM4855 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) LM4855LQ/NOPB ACTIVE WQFN NHW 24 1000 RoHS & Green SN Level-3-260C-168 HR -40 to 85 L4855LQ (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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