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LM48580
SNAS491B – FEBRUARY 2010 – REVISED FEBRUARY 2018
LM48580 Boomer™ Audio Power Amplifier Series High Efficiency Class H, High Voltage,
Haptic Piezo Actuator / Ceramic Speaker Driver
1 Features
3 Description
•
•
•
•
•
•
•
•
•
•
The LM48580 is a fully differential, high voltage driver
for piezo actuators and ceramic speakers for portable
multi-media devices. Part of TI’s Powerwise™
product line, the LM48580 Class H architecture offers
significant power savings compared to traditional
Class AB amplifiers. The device provides 30 VP-P
output drive while consuming just 15 mW of
quiescent power.
1
Class H Driver
Integrated Boost Converter
Bridge-tied Load Output
Differential Input
Three Pin-Programmable Gains
Low Supply Current
Minimum External components
Micro-Power Shutdown
Thermal Overload Protection
Available in Space-Saving 12-bump DSBGA
Package
2 Applications
•
•
•
•
•
Touch Screen Smart Phones
Tablet PCs
Portable Electronic Devices
MP3 Players
Key Specifications:
– Output Voltage at VDD = 3.6 V,
RL = 6 μF + 10 Ω, THD+N ≤ 1%
– 30 VP-P (Typical)
– Quiescent Power Supply Current at 3.6 V
– 2.7 mA (Typical)
– Power Dissipation at 25 VP-P
– 800 mW (Typical)
– Shutdown Current
– 0.1 μA (Typical)
The LM48580 is a single supply driver with an
integrated boost converter which allows the device to
deliver 30 VP-P from a single 3.6 V supply.
The LM48580 has three pin-programmable gain
settings and a low power Shutdown mode that
reduces quiescent current consumption to 0.1 µA.
The LM48580 is available in an ultra-small 12-bump
DSBGA package.
Device Information(1)
PART NUMBER
PACKAGE
LM48580
DSBGA
BODY SIZE (NOM)
2.00 mm x 1.80 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Typical Application
+2.5V to +5.5V
D1
L1
4.7 PH
CS
VDD
SW
VBST
CBST
1 PF
BOOST
CONVERTER
PGND
VAMP
SHDN
CIN
0.47 PF
10:
IN+
OUTGAIN
STAGE
CIN
0.47 PF
OUTPUT
STAGE
OUT+
INGAIN
SGND
Copyright © 2018, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM48580
SNAS491B – FEBRUARY 2010 – REVISED FEBRUARY 2018
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
9
10
11
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
Absolute Maximum Ratings..................................
ESD Ratings ...........................................................
Recommended Operating Conditions .................
Thermal Information..............................................
Electrical Characteristics: VDD = 3.6 V...............
1
1
1
2
3
4
4
4
4
4
5
11.1 Typical Performance Characteristics ...................... 6
12 Parameter Measurement Information.................. 8
13 Detailed Description ............................................. 9
13.1 Overview ................................................................. 9
13.2 Functional Block Diagram ....................................... 9
13.3 Feature Description................................................. 9
13.4 Device Functional Modes...................................... 10
14 Application and Implementation........................ 11
14.1 Application Information.......................................... 11
14.2 Typical Application ............................................... 11
15 Power Supply Recommendations ..................... 12
16 Layout................................................................... 13
16.1 Layout Guidelines ................................................. 13
16.2 Layout Example .................................................... 13
17 Device and Documentation Support ................. 14
17.1
17.2
17.3
17.4
17.5
17.6
Device Support ....................................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
14
14
14
14
14
14
18 Mechanical, Packaging, and Orderable
Information ........................................................... 14
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (May 2013) to Revision B
Page
•
Added Device Information table, ESD table, Thermal Information table, Parameter Measurement Information,
Feature Description, Device Functional Modes, Power Supply Recommendations, Layout section, Device and
Documentation Support, and Mechanical, Packaging, and Orderable Information................................................................ 1
•
Deleted the Demoboard Bill of Materials section ................................................................................................................. 12
•
Deleted the Demo Board Schematic section........................................................................................................................ 12
Changes from Original (February 2010) to Revision A
•
2
Page
Changed layout of National Data Sheet to TI format. ............................................................................................................ 1
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SNAS491B – FEBRUARY 2010 – REVISED FEBRUARY 2018
5 Pin Configuration and Functions
DSBGA Package
YZR 12-Pin
Top View
YZR0012 Package
(Bumps Up) View
1
2
3
A
OUT+
SGND
IN+
B
OUT-
GAIN
IN-
C
VAMP
SHDN
VDD
D
VBST
SW
PGND
Pin Functions
Bump
Name
A1
OUT+
Amplifier Non-Inverting Output
A2
SGND
Amplifier Ground
A3
IN+
B1
OUT-
Amplifier Inverting Output
GAIN
Gain Select:
GAIN = float: AV = 18dB
GAIN = GND: AV = 24dB
GAIN = VDD: AV = 30dB
Amplifier Inverting Input
B2
Description
Amplifier Non-Inverting Input
B3
IN-
C1
VAMP
Amplifier Supply Voltage. Connect to VBST
C2
SHDN
Active Low Shutdown. Drive SHDN low to disable device.
Connect SHDN to VDD for normal operation.
C3
VDD
Power Supply
D1
VBST
Boost Converter Output
D2
SW
Boost Converter Switching Node
D3
PGND
Boost Converter Ground
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SNAS491B – FEBRUARY 2010 – REVISED FEBRUARY 2018
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6 Specifications
7 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2)
MIN
MAX
UNIT
Supply Voltage
6
V
SW Voltage
25
V
VBST Voltage
21
V
17
V
VAMP
Input Voltage
−0.3
VDD + 0.3
V
Storage temperature, Tstg
−65
150
°C
150
°C
Junction Temperature
(1)
(2)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
8 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
±750
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
9 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
Temperature Range
Supply Voltage
MIN
NOM
MAX
−40
TA
85
UNIT
°C
2.5
VDD
5.5
V
10 Thermal Information
LM48580
THERMAL METRIC (1)
YZR (DSBGA)
UNIT
12 PINS
RθJA
Junction-to-ambient thermal resistance
82.1
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
0.6
°C/W
RθJB
Junction-to-board thermal resistance
20.6
°C/W
ψJT
Junction-to-top characterization parameter
0.4
°C/W
ψJB
Junction-to-board characterization parameter
20.7
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
n/a
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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SNAS491B – FEBRUARY 2010 – REVISED FEBRUARY 2018
11 Electrical Characteristics: VDD = 3.6 V (1)
The following specifications apply for RL = 6 μF + 10Ω, CBST = 1 μF, CIN = 0.47 μF, AV = 24 dB unless otherwise specified.
Limits apply for TA = 25°C.
PARAMETER
TEST CONDITIONS
Min
(2)
Typ
(3)
Max
2.5
(2)
Unit
VDD
Supply Voltage Range
IDD
Quiescent Power Supply Current,
VIN = 0V, RL = ∞
VDD = 3.6V
5.5
3
mA
PD
Power Consumption
VOUT = 25P-P, f = 200 Hz
VDD = 3.6V
800
mW
VDD = 3V
830
ISD
Shutdown Current
Shutdown Enabled
0.5
2
µA
TWU
Wake-up Time
From Shutdown
1.4
1.6
ms
VOS
Differential Output Offset Voltage
VDD = 3.6 V
2.7
VDD = 3V
1
V
4
mA
mW
63
360
mV
GAIN = FLOAT
17.5
18
18.5
dB
GAIN = GND
23.5
24
24.5
dB
GAIN = VDD
29.5
30
30.5
dB
46
52
58
kΩ
to GND
575
kΩ
to VDD
131
kΩ
3
VP-P
AV
Gain
RIN
Input Resistance
RIN
Gain Input Resistance
VIN
Maximum Input Voltage Range
AV = 18dB
Output Voltage
f = 200 Hz, THD+N = 1%
VDD = 3.6 V
Output Voltage
f = 2 kHz, THD+N = 5%
THD+N
Total Harmonic Distortion + Noise
VOUT = 25VP-P, f = 200Hz
Power Supply Rejection Ratio
VDD = 3.6 V + 200 mVp-p sine,
Inputs AC GND
fRIPPLE = 217 Hz,
75
dB
PSRR
fRIPPLE = 1 kHz
71
dB
CMRR
Common Mode Rejection Ratio
VCM = 200mVP-P sine
fRIPPLE = 217 Hz
56
dB
fRIPPLE = 1 kHz
55
dB
fSW
Boost Converter Switching
Frequency
2.1
MHz
ILIMIT
Boost Converter Current Limit
VIH
Logic High Input Threshold
SHDN
VIL
Logic Low Input Threshold
SHDN
IIN
Input Leakage Current
SHDN
VOUT
(1)
(2)
(3)
25
30.5
VP-P
30.5
VP-P
VDD = 3.6 V
11
VP-P
VDD = 3 V
8.5
VP-P
VDD = 3 V
0.16%
1100
1.2
mA
V
0.1
0.45
V
1
μA
The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as
otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and
are not ensured.
Datasheet min/max specification limits are specified by design, test, or statistical analysis.
Typical values represent most likely parametric norms at TA = +25ºC, and at the Recommended Operation Conditions at the time of
product characterization and are not specified.
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100
100
10
10
THD+N (%)
THD+N (%)
11.1 Typical Performance Characteristics
1
0.1
1
0.1
0.01
0.01
0.001
10
100
1000
10000
100000
0.001
10
100
FREQUENCY (Hz)
VDD = 3.6 V
RL = 6 μF + 10 Ω
VOUT = 9 VP-P
VDD = 4.2 V
Figure 1. THD+N vs Frequency
RL = 6 μF + 10 Ω
VOUT = 10 VP-P
OUTPUT VOLTAGE (VP-P)
10
1
100
1000
10000
10
1
0.1
10
100000
100
FREQUENCY (Hz)
VDD = 3.6 V
1000
10000
100000
FREQUENCY (Hz)
RL = 6 μF + 10 Ω
THD+N = 5%
VDD = 4.2 V
Figure 3. Output Voltage vs Frequency
RL = 6 μF + 10 Ω
THD+N = 5%
Figure 4. Output Voltage vs Frequency
100
100
f = 2 kHz
f = 2 kHz
10
THD+N (%)
10
THD+N (%)
100000
100
0.1
10
1
f = 200 Hz
1
f = 200 Hz
0.1
0.1
0.01
0.001
0.01
0.1
1
10
100
0.01
0.001
OUTPUT VOLTAGE (VP-P)
VDD = 3.6 V
0.01
0.1
1
10
100
OUTPUT VOLTAGE (VP-P)
RL = 6 μF + 10 Ω
VDD = 4.2 V
Figure 5. THD+N vs Output Voltage
6
10000
Figure 2. THD+N vs Frequency
100
OUTPUT VOLTAGE (VP-P)
1000
FREQUENCY (Hz)
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RL = 6 μF + 10 Ω
Figure 6. THD+N vs Output Voltage
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Typical Performance Characteristics (continued)
2500
3000
1500
1000
f = 200 Hz
500
0
0
5
10
2500
POWER DISSIPATION (mW)
POWER DISSIPATION (mW)
f = 2 kHz
2000
15
20
25
30
f = 2 kHz
2000
1500
1000
f = 200 Hz
500
0
0
35
5
OUTPUT VOLTAGE (VP-P)
RL = 6 μF + 10 Ω
VDD = 3.6 V
15
20
25
30
35
RL = 6 μF + 10 Ω
VDD = 4.2 V
Figure 7. Power Consumption vs Output Voltage
Figure 8. Power Consumption vs Output Voltage
35
0
30
-10
-20
25
-30
PSRR (dB)
OUTPUT VOLTAGE (VP-P)
10
OUTPUT VOLTAGE (VP-P)
20
15
-40
-50
-60
10
-70
5
-80
0
2.5
3
3.5
4
4.5
5
5.5
-90
10
SUPPLY VOLTAGE (V)
RL = 6 μF + 10 Ω,
100
10000
100000
FREQUENCY (Hz)
f = 200 Hz
VDD = 3.6 V
VRIPPLE = 200 mVP-P
Figure 9. Output Voltage vs Supply Voltage
1000
f = 200 Hz
RL = 6 μF + 10 Ω,
Figure 10. PSRR vs Frequency
0
-10
-20
PSRR (dB)
-30
-40
-50
-60
-70
-80
-90
10
100
1000
10000
100000
FREQUENCY (Hz)
VDD = 3.6 V
VCM = 1 VP-P
RL = 6 μF + 10 Ω
Figure 11. CMRR vs Frequency
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12 Parameter Measurement Information
VDD
ANALYZER
-
+
VDD
IN+
IN-
ZL
DUT
200 mVp-p
Copyright © 2018, Texas Instruments Incorporated
Figure 12. PSRR Test Circuit
200 mVp-p
ANALYZER
+
VDD
-
VDD
IN+
IN-
DUT
ZL
Copyright © 2018, Texas Instruments Incorporated
Figure 13. CMRR Test Circuit
8
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SNAS491B – FEBRUARY 2010 – REVISED FEBRUARY 2018
13 Detailed Description
13.1 Overview
The LM48580 is a fully differential, Class H ceramic element driver for ceramic speakers and haptic actuators.
The integrated, high efficiency boost converter dynamically adjusts the amplifier’s supply voltage based on the
output signal, increasing headroom and improving efficiency compared to a conventional Class AB driver. The
fully differential amplifier takes advantage of the increased headroom and bridge-tied load (BTL) architecture,
delivering significantly more voltage than a single-ended amplifier.
13.2 Functional Block Diagram
+2.5V to +5.5V
D1
L1
4.7 PH
CS
VDD
SW
VBST
CBST
1 PF
BOOST
CONVERTER
PGND
VAMP
SHDN
CIN
0.47 PF
10:
IN+
OUTGAIN
STAGE
CIN
0.47 PF
OUTPUT
STAGE
OUT+
INGAIN
SGND
Copyright © 2018, Texas Instruments Incorporated
13.3 Feature Description
13.3.1 Class H Operation
Class H is a modification of another amplifier class (typically Class B or Class AB) to increase efficiency and
reduce power dissipation. To decrease power dissipation, Class H uses a tracking power supply that monitors
the output signal and adjusts the supply accordingly. When the amplifier output is below 3 VP-P, the nominal
boost voltage is 6 V. As the amplifier output increases above 3 VP-P, the boost voltage tracks the amplifier output
as shown in Figure 14. When the amplifier output falls below 3 VP-P, the boost converter returns to its nominal
output voltage. Power dissipation is greatly reduced compared to conventional Class AB drivers.
Figure 14. Class H Operation
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Feature Description (continued)
13.3.2 Properties of Piezoelectric Elements
Piezoelectric elements such as ceramic speakers or piezoelectric haptic actuators are capacitive in nature. Due
to their capacitive nature, piezoelectric elements appear as low impedance loads at high frequencies (typically
above 5 kHz). A resistor in series with the piezoelectric element is required to ensure the amplifier does not see
a short at high frequencies.
The value of the series resistor depends on the capacitance of the element, the frequency content of the output
signal, and the desired frequency response. Higher valued resistors minimize power dissipation at high
frequencies, but also impacts the frequency response. This configuration is suited for use with haptic actuators,
where the majority of the signal content is typically below 2 kHz. Conversely, lower valued resistors maximize
frequency response, while increasing power dissipation at high frequency. This configuration is ideal for ceramic
speaker applications, where high frequency audio content needs to be reproduced. Resistor values are typically
between 10 Ω and 20 Ω.
13.3.3 Differential Amplifier Explanation
The LM48580 features a fully differential amplifier. A differential amplifier amplifies the difference between the
two input signals. A major benefit of the fully differential amplifier is the improved common mode rejection ratio
(CMRR) over single ended input amplifiers. The increased CMRR of the differential amplifier reduces sensitivity
to ground offset related noise injection, especially important in noisy systems.
13.3.4 Thermal Shutdown
The LM48580 features thermal shutdown that protects the device during thermal overload conditions. When the
junction temperature exceeds +160°C, the device is disabled. The LM48580 remains disabled until the die
temperature falls below the +160°C and SHDN is toggled.
13.3.5 Gain Setting
The LM48580 features three internally configured gain settings 18, 24, and 30 dB. The device gain is selected
through a single pin (GAIN). The gain settings are shown in Table 1.
Table 1. Gain Setting
Gain
Gain Setting
FLOAT
18 dB
GND
24 dB
VDD
30 dB
13.4 Device Functional Modes
13.4.1 Shutdown Function
The LM48580 features a low current shutdown mode. Set SD = GND to disable the amplifier and boost converter
and reduce supply current to 0.01µA.
10
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14 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
14.1 Application Information
14.2 Typical Application
The LM48580 is compatible with single-ended sources. When configured for single-ended inputs, input
capacitors must be used to block and DC component at the input of the device. Figure 15 shows the typical
single-ended applications circuit.
LM48580
SINGLE-ENDED
INPUT
IN-
IN+
Copyright © 2018, Texas Instruments Incorporated
Figure 15. Single-Ended Configuration
14.2.1 Design Requirements
14.2.1.1 Proper Selection of External Components
14.2.1.1.1 Boost Converter Capacitor Selection
The LM48580 boost converter requires three external capacitors for proper operation: a 1 μF supply bypass
capacitor, and 1 μF + 100 pF output reservoir capacitors. Place the supply bypass capacitor as close to VDD as
possible. Place the reservoir capacitors as close to VBST and VAMP as possible. Low ESR surface-mount multilayer ceramic capacitors with X7R or X5R temperature characteristics are recommended. Select output
capacitors with voltage rating of 25 V or higher. Tantalum, OS-CON and aluminum electrolytic capacitors are not
recommended. See Table 2 for suggested capacitor manufacturers.
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Typical Application (continued)
14.2.2 Detailed Design Procedure
14.2.2.1 Boost Converter Output Capacitor Selection
14.2.2.1.1 Inductor Selection
The LM48580 boost converter is designed for use with a 4.7 μH inductor. Table 2 lists various inductors and their
manufacturers. Choose an inductor with a saturation current rating greater than the maximum operating peak
current of the LM48580 (> 1 A). This ensures that the inductor does not saturate, preventing excess efficiency
loss, over heating and possible damage to the inductor. Additionally, choose an inductor with the lowest possible
DCR (series resistance) to further minimize efficiency losses.
Table 2. Recommended Inductors (1)
(1)
MANUFACTURER
PART#
INDUCTANCE/ISAT
Taiyo Yuden
BRL3225T4R7M
4.7 µH/1.1 A
Coilcraft
LP3015
4.7 µH/1.1 A
See Development Support
14.2.2.1.2
Diode Selection
Use a Schottkey diode as shown in the Functional Block Diagram. A 20 V diode such as the NSR0520V2T1G
from On Semiconductor is recommended. The NSR0520V2T1G is designed to handle a maximum average
current of 500 mA.
14.2.2.2 Application Curves
C3: BST Voltage
C3: BST Voltage
C2: OUT-
C2: OUT-
C1: OUT+
C1: OUT+
F1: (OUT+) - (OUT-)
F1: (OUT+) - (OUT-)
Figure 16. Full Scale Output 30 VPP at 1 kHz
Figure 17. Full Scale Output 30 VPP at 100 Hz
15 Power Supply Recommendations
The LM48580 device is designed be operate with a power supply between 2.5 V and 5.5 V. Proper power supply
bypassing is critical for low noise performance and high PSRR. Place the supply bypass capacitors as close to
the device as possible. Place a 1-μF ceramic capacitor from VDD to GND. Additional bulk capacitance may be
added as required
12
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16 Layout
16.1 Layout Guidelines
•
•
•
•
•
•
Minimize trace impedance of the power, ground and all output traces for optimum performance.
Voltage loss due to trace resistance between the LM48580 and the load results in decreased output power
and efficiency.
Trace resistance between the power supply and ground has the same effect as a poorly regulated supply,
increased ripple and reduced peak output power.
Use wide traces for power supply inputs and amplifier outputs to minimize losses due to trace resistance, as
well as route heat away from the device.
Proper grounding improves audio performance, minimizes crosstalk between channels and prevents
switching noise from interfering with the audio signal.
Use of power and ground planes is recommended.
Place all digital components and route digital signal traces as far as possible from analog components and
traces. Do not run digital and analog traces in parallel on the same PCB layer. If digital and analog signal lines
must cross either over or under each other, ensure that they cross in a perpendicular fashion.
16.2 Layout Example
Figure 18. Example Layout
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17 Device and Documentation Support
17.1 Device Support
17.1.1 Development Support
17.1.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
17.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
17.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
17.4 Trademarks
Boomer, Powerwise, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
17.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
17.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
18 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
14
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Copyright © 2010–2018, Texas Instruments Incorporated
Product Folder Links: LM48580
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
LM48580TL/NOPB
ACTIVE
DSBGA
YZR
12
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
GM3
LM48580TLX/NOPB
ACTIVE
DSBGA
YZR
12
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
GM3
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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