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LM50, LM50-Q1
SNIS118G – JULY 1999 – REVISED JANUARY 2017
LM50 and LM50-Q1 SOT-23 Single-Supply Centigrade Temperature Sensor
1 Features
3 Description
•
The LM50 and LM50-Q1 devices are precision
integrated-circuit temperature sensors that can sense
a –40°C to 125°C temperature range using a single
positive supply. The output voltage of the device is
linearly proportional to temperature (10 mV/°C) and
has a DC offset of 500 mV. The offset allows reading
negative temperatures without the need for a
negative supply.
1
•
•
•
•
•
•
•
•
•
•
•
LM50-Q1 is AEC-Q100 Grade 1 Qualified and is
Manufactured on an Automotive Grade Flow
Calibrated Directly in Degrees Celsius
(Centigrade)
Linear + 10 mV/°C Scale Factor
±2°C Accuracy Specified at 25°C
Specified for Full –40° to 125°C Range
Suitable for Remote Applications
Low Cost Due to Wafer-Level Trimming
Operates From 4.5 V to 10 V
Less Than 130-µA Current Drain
Low Self-Heating: Less Than 0.2°C in Still A
Nonlinearity Less Than 0.8°C Over Temp
UL Recognized Component
2 Applications
•
•
•
•
•
•
•
•
•
Automotive
Computers
Disk Drives
Battery Management
FAX Machines
Printers
Portable Medical Instruments
HVAC
Power Supply Modules
SPACER
Simplified Schematic
The ideal output voltage of the LM50 or LM50-Q1
ranges from 100 mV to 1.75 V for a –40°C to 125°C
temperature range. The LM50 and LM50-Q1 do not
require any external calibration or trimming to provide
accuracies of ±3°C at room temperature and ±4°C
over the full –40°C to 125°C temperature range.
Trimming and calibration of the LM50 and LM50-Q1
at the wafer level assure low cost and high accuracy.
The linear output, 500 mV offset, and factory
calibration of the LM50 and LM50-Q1 simplify the
circuitry requirements in a single supply environment
where reading negative temperatures is necessary.
Because the quiescent current of the LM50 and
LM50-Q1 is less than 130 µA, self-heating is limited
to a very low 0.2°C in still air.
Device Information(1)
PART NUMBER
LM50, LM50-Q1
PACKAGE
BODY SIZE (NOM)
SOT-23 (3)
2.92 mm × 1.30 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Full-Range Centigrade Temperature Sensor
(–40°C to 125°C)
+VS
(4.5 V to 10 V)
2.00
LM50
LM50-Q1
Output
Copyright © 2016, Texas Instruments Incorporated
Output Voltage (V)
1.75
1.50
1.750
1.25
0.750
1.00
0.75
0.50
0.100
VO = (+10 mV/°C × T °C) + 500 mV
0.25
0.00
±50
±25
0
25
50
75
DUT Temperature (ƒC)
100
125
150
C001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM50, LM50-Q1
SNIS118G – JULY 1999 – REVISED JANUARY 2017
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
6.1
6.2
6.3
6.4
6.5
6.6
6.7
3
3
4
4
4
5
6
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics: LM50B .............................
Electrical Characteristics: LM50C and LM50-Q1 ......
Typical Characteristics ..............................................
Detailed Description .............................................. 8
7.1
7.2
7.3
7.4
Overview ...................................................................
Functional Block Diagram .........................................
Feature Description...................................................
Device Functional Modes..........................................
8
8
8
8
8
Application and Implementation .......................... 9
8.1 Application Information.............................................. 9
8.2 Typical Application .................................................... 9
8.3 System Examples ................................................... 11
9 Power Supply Recommendations...................... 12
10 Layout................................................................... 12
10.1 Layout Guidelines ................................................. 12
10.2 Layout Example .................................................... 12
10.3 Thermal Considerations ........................................ 13
11 Device and Documentation Support ................. 14
11.1
11.2
11.3
11.4
11.5
11.6
Related Links ........................................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
14
14
14
14
14
14
12 Mechanical, Packaging, and Orderable
Information ........................................................... 14
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision F (December 2016) to Revision G
•
Page
Changed LMT90 to LM50 in VO description of Equation 1 .................................................................................................... 8
Changes from Revision E (September 2013) to Revision F
Page
•
Added Device Information table, Pin Configuration and Functions section, ESD Ratings table, Detailed Description
section, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ............................... 1
•
Added Thermal Information table ........................................................................................................................................... 4
•
Changed Junction-to-ambient, RθJA, value in Thermal Information table From: 450°C/W To: 291.9°C/W ............................ 4
•
Deleted the Temperature To Digital Converter (Parallel TRI-STATE Outputs for Standard Data Bus to µP Interface)
(125°C Full Scale) figure ...................................................................................................................................................... 11
Changes from Revision C (February 2013) to Revision E
•
2
Page
Added LM50-Q1 option throughout document ....................................................................................................................... 1
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SNIS118G – JULY 1999 – REVISED JANUARY 2017
5 Pin Configuration and Functions
DBZ Package
3-Pin SOT-23
Top View
+VS
1
3
VO
GND
2
Pin Functions
PIN
NO.
TYPE
NAME
DESCRIPTION
1
+VS
Power
Positive power supply pin.
2
VOUT
Output
Temperature sensor analog output.
3
GND
Ground
Device ground pin, connected to power supply negative terminal.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
UNIT
Supply voltage
–0.2
12
V
Output voltage
–1
+VS + 0.6
V
Output current
10
mA
Maximum junction temperature, TJ
150
°C
150
°C
Storage temperature, Tstg
(1)
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions(). Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
UNIT
LM50
V(ESD)
Electrostatic discharge
Human body model (HBM) (1)
±2000
Charged-device model (CDM)
±750
Machine model (1)
±250
Human-body model (HBM), per AEC Q100-002 (2)
±2000
Charged-device model (CDM), per AEC Q100-011
±750
V
LM50-Q1
V(ESD)
(1)
(2)
Electrostatic discharge
V
The human body model is a 100-pF capacitor discharged through a 1.5-kΩ resistor into each pin. Machine model is a 200-pF capacitor
discharged directly into each pin.
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
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6.3 Recommended Operating Conditions (1)
+VS
MIN
MAX
4.5
10
LM50C, LM50-Q1
–40
125
LM50B
–25
100
–40
150
Supply voltage
TMIN,
TMAX
Specified temperature
Operating temperature
(1)
UNIT
V
°C
°C
Soldering process must comply with the Reflow Temperature Profile specifications. Reflow temperature profiles are different for leadfree and non-lead-free packages. Refer to www.ti.com/packaging.
6.4 Thermal Information
LM50, LM50-Q1
THERMAL METRIC (1)
DBZ (SOT-23)
UNIT
3 PINS
RθJA
Junction-to-ambient thermal resistance
291.9
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
114.3
°C/W
RθJB
Junction-to-board thermal resistance
62.3
°C/W
φJT
Junction-to-top characterization parameter
7.4
°C/W
φJB
Junction-to-board characterization parameter
61
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics: LM50B
+VS = 5 V (DC) and ILOAD = 0.5 µA, in the circuit of Figure 12, TA = TJ = 25°C (unless otherwise noted) (1)
PARAMETER
Accuracy (2)
Nonlinearity
(3)
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TA = 25°C
–2
2
°C
TA = TMAX
–3
3
°C
TA = TMIN
–3.5
3
°C
TA = TJ = TMIN to TMAX
–0.8
0.8
°C
Sensor gain (average slope)
TA = TJ = TMIN to TMAX
9.7
10.3
mV/°C
Output resistance
TA = TJ = TMIN to TMAX
Line regulation (4)
+VS = 4.5 V to 10 V, TA = TJ = TMIN to TMAX
Quiescent current (5)
Change of quiescent current
Temperature coefficient of quiescent current
TA = TJ = TMIN to TMAX
Long term stability (6)
TJ = 125°C, for 1000 hours
(1)
(2)
(3)
(4)
(5)
(6)
4
2000
–1.2
4000
Ω
1.2
mV/V
+VS = 4.5 V to 10 V, TA = TJ = TMIN to TMAX
180
µA
+VS = 4.5 V to 10 V, TA = TJ = TMIN to TMAX
2
1
±0.08
µA
µA/°C
°C
Limits are specified to TI's AOQL (Average Outgoing Quality Level).
Accuracy is defined as the error between the output voltage and 10 mv/°C multiplied by the device's case temperature plus 500 mV, at
specified conditions of voltage, current, and temperature (expressed in °C).
Nonlinearity is defined as the deviation of the output-voltage-versus-temperature curve from the best-fit straight line, over the device's
rated temperature range.
Regulation is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output due to heating
effects can be computed by multiplying the internal dissipation by the thermal resistance.
Quiescent current is defined in the circuit of Figure 12.
For best long-term stability, any precision circuit will give best results if the unit is aged at a warm temperature, and/or temperature
cycled for at least 46 hours before long-term life test begins. This is especially true when a small (Surface-Mount) part is wave-soldered;
allow time for stress relaxation to occur. The majority of the drift occurs in the first 1000 hours at elevated temperatures. The drift after
1000 hours does not continue at the first 1000 hour rate.
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6.6 Electrical Characteristics: LM50C and LM50-Q1
+VS = 5 V (DC) and ILOAD = 0.5 µA, in the circuit of Figure 12. TA = TJ = 25°C, unless otherwise noted. (1)
PARAMETER
Accuracy (2)
TEST CONDITIONS
MIN
–3
3
°C
–4
4
°C
TA = TMIN
–4
4
°C
0.8
°C
10.3
mV/°C
–0.8
Sensor gain(average slope)
TA = TJ = TMIN to TMAX
9.7
Output resistance
TA = TJ = TMIN to TMAX
Line regulation (4)
+VS = 4.5 V to 10 V, TA = TJ = TMIN to TMAX
Quiescent current (5)
Change of quiescent current
Temperature coefficient of quiescent current
TA = TJ = TMIN to TMAX
Long term stability (6)
TJ = 125°C, for 1000 hours
(4)
(5)
(6)
UNIT
TA = TMAX
TA = TJ = TMIN to TMAX
(3)
MAX
TA = 25°C
Nonlinearity (3)
(1)
(2)
TYP
2000
–1.2
4000
Ω
1.2
mV/V
+VS = 4.5 V to 10 V, TA = TJ = TMIN to TMAX
180
µA
+VS = 4.5 V to 10 V, TA = TJ = TMIN to TMAX
2
2
µA
µA/°C
±0.08
°C
Limits are specified to TI's AOQL (Average Outgoing Quality Level).
Accuracy is defined as the error between the output voltage and 10 mv/°C multiplied by the device's case temperature plus 500 mV, at
specified conditions of voltage, current, and temperature (expressed in °C).
Nonlinearity is defined as the deviation of the output-voltage-versus-temperature curve from the best-fit straight line, over the device's
rated temperature range.
Regulation is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output due to heating
effects can be computed by multiplying the internal dissipation by the thermal resistance.
Quiescent current is defined in the circuit of Figure 12.
For best long-term stability, any precision circuit will give best results if the unit is aged at a warm temperature, and/or temperature
cycled for at least 46 hours before long-term life test begins. This is especially true when a small (Surface-Mount) part is wave-soldered;
allow time for stress relaxation to occur. The majority of the drift occurs in the first 1000 hours at elevated temperatures. The drift after
1000 hours does not continue at the first 1000 hour rate.
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6.7 Typical Characteristics
To generate these curves the device was mounted to a printed circuit board as shown in Figure 20.
Figure 1. Junction-to-Ambient Thermal Resistance
Figure 2. Thermal Time Constant
see Figure 20
6
Figure 3. Thermal Response in Still Air With Heat Sink
Figure 4. Thermal Response in Stirred Oil Bath
With Heat Sink
Figure 5. Start-Up Voltage vs Temperature
Figure 6. Thermal Response in Still Air Without a Heat Sink
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Typical Characteristics (continued)
To generate these curves the device was mounted to a printed circuit board as shown in Figure 20.
see Figure 12
Figure 7. Quiescent Current vs Temperature
Figure 8. Accuracy vs Temperature
Figure 9. Noise Voltage
Figure 10. Supply Voltage vs Supply Current
Figure 11. Start-Up Response
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7 Detailed Description
7.1 Overview
The LM50 and LM50-Q1 devices are precision integrated-circuit temperature sensors that can sense a –40°C to
125°C temperature range using a single positive supply. The output voltage of the LM50 and LM50-Q1 has a
positive temperature slope of 10 mV/°C. A 500-mV offset is included enabling negative temperature sensing
when biased by a single supply.
The temperature-sensing element is comprised of a delta-VBE architecture. The temperature-sensing element is
then buffered by an amplifier and provided to the VOUT pin. The amplifier has a simple class A output stage with
typical 2-kΩ output impedance as shown in the Functional Block Diagram.
7.2 Functional Block Diagram
*R2 ≈ 2k with a typical 1300-ppm/°C drift.
7.3 Feature Description
7.3.1 LM50 and LM50-Q1 Transfer Function
The LM50 and LM50-Q1 follow a simple linear transfer function to achieve the accuracy as listed in the Electrical
Characteristics: LM50B table and the Electrical Characteristics: LM50C and LM50-Q1 table.
Use Equation 1 to calculate the value of VO.
VO = 10 mV/°C × T °C + 500 mV
where
•
•
T is the temperature in °C
VO is the LM50 output voltage
(1)
7.4 Device Functional Modes
The only functional mode of the device has an analog output directly proportional to temperature.
8
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The LM50 and LM50-Q1 have a wide supply range and a 10 mV/°C output slope with a 500-mV DC offset.
Therefore, it can be easily applied in many temperature-sensing applications where a single supply is required
for positive and negative temperatures.
8.2 Typical Application
8.2.1 Full-Range Centigrade Temperature Sensor
+VS
(4.5 V to 10 V)
LM50
LM50-Q1
Output
Copyright © 2016, Texas Instruments Incorporated
Figure 12. Full-Range Centigrade Temperature Sensor Diagram(–40°C to 125°C)
8.2.1.1 Design Requirements
For this design example, use the parameters listed in Table 1 as the input parameters.
Table 1. Design Parameters
PARAMETER
VALUE
Power supply voltage
±3°C (maximum)
Output impedance
±4°C (maximum)
Accuracy at 25°C
10 mV/°C
Accuracy over –40°C to 125°C
4.5 V to 10 V
Temperature slope
4 kΩ (maximum)
8.2.1.2 Detailed Design Procedure
The LM50 and LM50-Q1 are simple temperature sensors that provides an analog output. Therefore design
requirements related to layout are more important than other requirements. See Layout for more information.
8.2.1.2.1 Capacitive Loads
The LM50 and LM50-Q1 handle capacitive loading very well. Without any special precautions, the LM50 and
LM50-Q1 can drive any capacitive load. The device has a nominal 2-kΩ output impedance (shown in Functional
Block Diagram). The temperature coefficient of the output resistors is around 1300 ppm/°C. Taking into account
this temperature coefficient and the initial tolerance of the resistors the output impedance of the device will not
exceed 4 kΩ. In an extremely noisy environment it may be necessary to add some filtering to minimize noise
pickup. TI recommends adding a 0.1-µF capacitor between +VS and GND to bypass the power supply voltage,
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as shown in Figure 14. It may also be necessary to add a capacitor from VOUT to ground. A 1-µF output
capacitor with the 4-kΩ output impedance will form a 40-Hz low-pass filter. Since the thermal time constant of the
LM50 and LM50-Q1 is much slower than the 25-ms time constant formed by the RC, the overall response time of
the device will not be significantly affected. For much larger capacitors this additional time lag will increase the
overall response time of the LM50 and LM50-Q1.
Heavy Capacitive Load, Wiring, Etc.
LM50/
LM50-Q1
To A HighImpedance Load
OUT
Copyright © 2016, Texas Instruments Incorporated
Figure 13. LM50 and LM50-Q1 No Decoupling Required
for Capacitive Load
Heavy Capacitive Load, Wiring, Etc.
OUT
LM50/
LM50-Q1
0.1 µF Bypass
Optional
1 µF
Copyright © 2016, Texas Instruments Incorporated
Figure 14. LM50C and LM50-Q1 with Filter for Noisy Environment
8.2.1.3 Application Curve
2.00
Output Voltage (V)
1.75
1.50
1.750
1.25
0.750
1.00
0.75
0.50
0.100
VO = (+10 mV/°C × T °C) + 500 mV
0.25
0.00
±50
±25
0
25
50
75
100
125
DUT Temperature (ƒC)
150
C001
Figure 15. Output Transfer Function
10
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8.3 System Examples
Figure 16 to Figure 18 show application circuit examples using the LM50 or LM50-Q1 devices. Customers must
fully validate and test any circuit before implementing a design based on an example in this section. Unless
otherwise noted, the design procedures in Full-Range Centigrade Temperature Sensor are applicable.
R3
V+
5V
+
R4
R1
4.1 V
VT
LM50/
LM50-Q1
+
U3
R2
0.1 µF
-
IN
REF
VOUT
U1
LM4040
3.9 k
OUT
1.750 V
GND
LM7101
Serial
Data Output
ADC08031
100 k
FB
+
LM4041ADJ
CLOCK
+
V+
1 µF
LM50/
LM50-Q1
ENABLE
10 k
VTemp
-
U2
GND
Copyright © 2016, Texas Instruments Incorporated
Copyright © 2016, Texas Instruments Incorporated
125°C full scale
Figure 16. Centigrade Thermostat or Fan
Controller
Figure 17. Temperature To Digital Converter
(Serial Output)
6V
6.8 K
1K
fOUT
4N28
+
8
100 K
7
LM50/
LM50-Q1
5
LM131
6
GND
3
1
0.01 µF
2
4
12 K
100 K
47
1 µF
FULL
SCALE
ADJ
0.01 µF
5k
Copyright © 2016, Texas Instruments Incorporated
–40°C to 125°C; 100 Hz to 1750 Hz
Figure 18. LM50 or LM50-Q1 With Voltage-To-Frequency Converter and Isolated Output
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9 Power Supply Recommendations
In an extremely noisy environment, it may be necessary to add some filtering to minimize noise pickup. TI
recommends that a 0.1-µF capacitor be added from +VS to GND to bypass the power supply voltage, as shown
in Figure 14.
10 Layout
10.1 Layout Guidelines
The LM50 and LM50-Q1 can be applied easily in the same way as other integrated-circuit temperature sensors.
The device can be glued or cemented to a surface and its temperature will be within about 0.2°C of the surface
temperature.
This presumes that the ambient air temperature is almost the same as the surface temperature; if the air
temperature were much higher or lower than the surface temperature, the actual temperature of the LM50 or
LM50-Q1 die would be at an intermediate temperature between the surface temperature and the air temperature.
To ensure good thermal conductivity the backside of the LM50 and LM50-Q1 die is directly attached to the GND
pin. The lands and traces to the device will, of course, be part of the printed-circuit board, which is the object
whose temperature is being measured. These printed-circuit board lands and traces will not cause the LM50 or
LM50-Q1's temperature to deviate from the desired temperature.
Alternatively, the LM50 and LM50-Q1 can be mounted inside a sealed-end metal tube, and can then be dipped
into a bath or screwed into a threaded hole in a tank. As with any IC, the LM50 and LM50-Q1 and accompanying
wiring and circuits must be kept insulated and dry, to avoid leakage and corrosion. This is especially true if the
circuit may operate at cold temperatures where condensation can occur. Printed-circuit coatings and varnishes
such as Humiseal and epoxy paints or dips are often used to ensure that moisture cannot corrode the device or
its connections.
10.2 Layout Example
+VS
1
3
VO
GND
2
Via to ground plane
Via to power plane
Figure 19. PCB Layout
12
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Layout Example (continued)
1/2 in., square printed-circuit board with 2-oz foil or similar
Figure 20. Printed-Circuit Board Used for Heat Sink to Generate Thermal Response Curves
10.3 Thermal Considerations
Table 2 summarizes the thermal resistance of the LM50 and LM50-Q1 for different conditions.
Table 2. Temperature Rise of LM50 and LM50-Q1 Due to Self-Heating
RθJA (°C/W)
Still air
No heat sink (1)
Moving air
SOT-23
Small heat fin (2)
(1)
(2)
450
—
Still air
260
Moving air
180
Part soldered to 30 gauge wire.
Heat sink used is 1/2-in., square printed-circuit board with 2-oz foil; part attached as shown in Figure 20.
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11 Device and Documentation Support
11.1 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to order now.
Table 3. Related Links
PARTS
PRODUCT FOLDER
ORDER NOW
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
LM50-Q1
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
14
Submit Documentation Feedback
Copyright © 1999–2017, Texas Instruments Incorporated
Product Folder Links: LM50 LM50-Q1
PACKAGE OPTION ADDENDUM
www.ti.com
19-Jul-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
LM50BIM3
NRND
SOT-23
DBZ
3
1000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
-40 to 150
T5B
LM50BIM3/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
T5B
Samples
LM50BIM3X/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
T5B
Samples
LM50CIM3
ACTIVE
SOT-23
DBZ
3
1000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
-40 to 125
T5C
Samples
LM50CIM3/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
T5C
Samples
LM50CIM3X
NRND
SOT-23
DBZ
3
3000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
-40 to 150
T5C
LM50CIM3X/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
T5C
Samples
LM50QIM3/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
T5Q
Samples
LM50QIM3X/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
T5Q
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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